WO2014202341A1 - Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography - Google Patents
Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography Download PDFInfo
- Publication number
- WO2014202341A1 WO2014202341A1 PCT/EP2014/060834 EP2014060834W WO2014202341A1 WO 2014202341 A1 WO2014202341 A1 WO 2014202341A1 EP 2014060834 W EP2014060834 W EP 2014060834W WO 2014202341 A1 WO2014202341 A1 WO 2014202341A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mask
- defects
- cdi
- scanning
- analyzing
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract description 27
- 238000007689 inspection Methods 0.000 title abstract description 20
- 230000001427 coherent effect Effects 0.000 title description 5
- 238000001900 extreme ultraviolet lithography Methods 0.000 title description 5
- 230000007547 defect Effects 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 238000005286 illumination Methods 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims abstract description 5
- 238000011835 investigation Methods 0.000 abstract description 4
- 238000012512 characterization method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
Definitions
- the present invention relates to a scanning coherent diffractive imaging method and system for actinic mask inspection for EUV lithography.
- EUV lithography is the most promising route to face
- the aims of inspection tasks may be different such as determination of defect density of mask blanks, identification of the defects (phase, amplitude, size, type of defect) , comparison of defect density of blanks which went through different preparation or cleaning process, evaluation of a certain cleaning process if it is successful for removal of a previously identified defect, etc.
- the other one is the patterned masks on which the required patterns are written as absorber structures on mask blanks.
- the feature size of the patterns is 4x larger than the desired pattern on wafer. This means, for instance, for 11 nm technology node the minimum feature size will be 44 nm.
- the aims include, but not limited to, obtaining the areal image of the mask,
- actinic inspection we mean at wavelength and relevant incidence angle of the light. For EUV mask, this must be reflective and at incidence angle of 6 degrees at 13.5 nm wavelength. This is the standard condition for the use of the masks in real operation, i.e lithographic production of semiconductor devices.
- Berkeley tool is the leading academic tool.
- the existing tool is called AIT [2] and the future tool, which will be installed within next year, is called AIT 5 [3] .
- This tool uses and off-axis FZP up to 0.5 NA. It enables switching the A and magnification with an ultimate resolution of 26 nm. But this value seems to be too optimistic, given the facts on the difficulty of the method and FZP fabrication.
- Zeiss tool (AIMS) which is under construction and most of its details are not disclosed yet, is thought for commercial use. It will use a reflective optics with 0.35 NA. The optics of the tool is highly challenging and sophisticated.
- the Kinoshita group working at the New Subaru is the leading group in CDI based EUV mask inspection.
- a system for differential CDI for the identification of errors in periodic mask patterns comprising:
- d) means for analyzing the detected intensities for intensity variations deviating from the normal intensity distribution caused by the periodic mask pattern .
- the present invention therefore proposes a novel techniques for lensless, high-resolution and reflective imaging of samples using scanning CDI; as well as detecting the defects by analyzing the detected intensities by looking at their difference from the expected intensities, which can be called differential CDI.
- differential CDI differential CDI
- a priori knowledge of the illumination is not needed, the sample area is not limited, a reference beam or a reference structure is not needed.
- both amplitude and phase are extracted
- a fast inspection can be executed by steps of multiples of period, which should give the same diffraction pattern.
- Subject of the present invention is that the investigation for only deviation from the normal diffraction pattern will allow rapid
- Figure 1 shows a number of EUV actinic mask inspection tools according to the prior art
- FIG. 2 to 6 show different set-ups of reflective scanning CDI, i.e. ptychographic imaging.
- Ptychography is a technique that aims to solve the
- each reciprocal lattice point is convolved with some function, and thus made to interfere with its neighbors.
- measuring only the intensities of interfering adjacent diffracted beams still leads to an ambiguity of two possible complex conjugates for each underlying complex diffraction amplitude.
- the original formulation of ptychography is equivalent to the well known theorem that for a finite specimen (that is one delineated by a narrow aperture, sometimes known as a finite support) , the one dimensional phase problem is soluble to within an ambiguity of 2N, where N is the number of Fourier components that make up the specimen.
- ambiguities may be resolved by changing the phase, profile or position of the illuminating beam in some way.
- Ptychography is a CDI method based on scan with oversampling . It enables high-resolution imaging without optics. It provides both amplitude and phase information of the specimens. Since this method is a coherent imaging method, it has stringent requirements on spatial and temporal coherence. The resolution is limited by the NA of the detector and accuracy of the stage. With high- NA Fourier transform imaging 90 nm resolution has been demonstrated [7] at a wavelength of 29 nm. The resolution was improved by using an iterative phase retrieval method down to 50 nm. The present invention shows the potential of ptychographic methods for high-resolution imaging in EUV and soft X-ray range .
- ptychography can be used for EUV mask
- Resolution is not limited with optics: detector limited resolution for spot size is possible.
- High NA EUV optics is vey expensive, making high-resolution inspection tools costly .
- the time budget is mainly consumed by read-out time of the detector and collection time is insignificant.
- illumination or reference beam or reference frame/pattern in order to reconstruct the image. Therefore, it is more flexible and imaging area is not limited.
- the present invention proposes also a novel technique, which can be called differential CDI .
- a fast inspection can be executed by steps of multiples of period, which should give the same diffraction pattern.
- Subject of the present invention is that the investigation for only deviation from the normal diffraction pattern will allow rapid identification of the defects on periodic mask patterns. After the identification of the defects, these areas of interest can be analyzed in detail and the image can be reconstructed using ptychograhy.
- ptychographic imaging for EUV There are several possible setups with ptychographic imaging for EUV. Figure 2 to 6 shows the possible setups. But other configurations are also possible.
- Figure 2 shows the simplest configuration for reflective imaging using scanning CDI.
- the incidence angle is close to the surface normal, the collected angle by the detector is small if the part of the detector is not blocked. Therefore, our setups proposed in Figure 2 are limited in resolution.
- the incidence angle is 6 degrees and therefore the best resolution that can be obtained by these setups is about 70 nm.
- Figure 3 allows collection of half of the high-angle scattered light at 6 degrees of illumination.
- the reflected light is detected by a fluorescent screen which converts the EUV light to visible light.
- the EUV light passes through a pinhole on the screen and reaches the sample.
- the diffracted intensity on the screen is detected by a pixel detector sensitive to visible light.
- Figure 5 shows different setups using beam splitters.
- First setup uses a beamsplitter which is partially transparent and partially reflective to light. Beamsplitter is used either to reflect the incoming light to the sample and transmit the light from the sample or to transmit the incoming light to sample and reflect the outgoing light from sample to detector.
- the other figure realizes the beamsplitting concept using a reflective mirror and a through pinhole on it to transmit the light or a reflective pinhole on a transparent film.
- Figure 5 also introduces the option of imaging with lens.
- This lens can be inserted and retracted. It can be used to obtain a low-resolution image, which can be used for navigation purposes or for faster reconstruction of the high resolution image using ptychographic methods combined with the a-priori low resolution image.
- Figure 6 shows, two setups for high-NA reflective imaging using scanning CDIs.
- two detectors are used to capture the scattering intensity into high angles, enabling to reconstruct high-resolution images.
- CCD refers to any type of pixelated detector and not limited to soft X-ray CCDs.
- differential CDI For periodically structured masks, a fast inspection can be executed by steps of multiples of period, which should give the same diffraction pattern. Subject of the present invention is that the investigation for only deviation from the normal diffraction pattern will allow rapid identification of the defects on periodic mask patterns. Compared to other CDI methods, a priori knowledge of the illumination is not needed. Both amplitude and phase are extracted whereas optics-based imaging requires through- focus imaging in order to reconstruct the phase.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Toxicology (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167000936A KR20160021223A (en) | 2013-06-17 | 2014-05-26 | Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography |
JP2016520344A JP2016526702A (en) | 2013-06-17 | 2014-05-26 | Scanning coherent diffraction imaging method and system for actinic mask inspection in EUV lithography |
EP14729248.6A EP3011389A1 (en) | 2013-06-17 | 2014-05-26 | Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography |
US14/899,235 US20160154301A1 (en) | 2013-06-17 | 2014-05-26 | Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13172238 | 2013-06-17 | ||
EP13172238.1 | 2013-06-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014202341A1 true WO2014202341A1 (en) | 2014-12-24 |
Family
ID=48625907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/060834 WO2014202341A1 (en) | 2013-06-17 | 2014-05-26 | Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160154301A1 (en) |
EP (1) | EP3011389A1 (en) |
JP (1) | JP2016526702A (en) |
KR (1) | KR20160021223A (en) |
WO (1) | WO2014202341A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016138772A (en) * | 2015-01-27 | 2016-08-04 | 国立研究開発法人理化学研究所 | Imaging device and imaging method |
WO2017025373A1 (en) * | 2015-08-12 | 2017-02-16 | Asml Netherlands B.V. | Inspection apparatus, inspection method and manufacturing method |
EP3208657A1 (en) * | 2016-02-22 | 2017-08-23 | Paul Scherrer Institut | Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102416784B1 (en) * | 2014-08-28 | 2022-07-04 | 보셩 장 | Coherent diffractive imaging with arbitrary angle of incidence |
CN107576633B (en) * | 2017-08-10 | 2020-10-02 | 南京理工大学 | Method for detecting internal defects of optical element by using improved 3PIE technology |
KR102374206B1 (en) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | Method of fabricating semiconductor device |
KR102256578B1 (en) * | 2018-11-30 | 2021-05-26 | 한양대학교 산학협력단 | Apparatus and method for ptychography imaging |
CN115053122A (en) * | 2019-12-02 | 2022-09-13 | 朗姆研究公司 | Reflective fourier stack imaging of large surfaces |
KR20210068890A (en) | 2019-12-02 | 2021-06-10 | 삼성전자주식회사 | Inspection apparatus and method based on CDI(Coherent Diffraction Imaging) |
US11293880B2 (en) | 2020-02-20 | 2022-04-05 | Kla Corporation | Method and apparatus for beam stabilization and reference correction for EUV inspection |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090234687A1 (en) * | 2008-03-17 | 2009-09-17 | Tokyo Electron Limited | Method of designing an optical metrology system optimized for operating time budget |
-
2014
- 2014-05-26 JP JP2016520344A patent/JP2016526702A/en active Pending
- 2014-05-26 WO PCT/EP2014/060834 patent/WO2014202341A1/en active Application Filing
- 2014-05-26 EP EP14729248.6A patent/EP3011389A1/en not_active Withdrawn
- 2014-05-26 US US14/899,235 patent/US20160154301A1/en not_active Abandoned
- 2014-05-26 KR KR1020167000936A patent/KR20160021223A/en not_active Application Discontinuation
Non-Patent Citations (14)
Title |
---|
BOSHENG ZHANG ET AL: "Coherent diffractive imaging microscope with a tabletop high harmonic EUV source", PROCEEDINGS OF SPIE, vol. 8681, 10 April 2013 (2013-04-10), pages 86810H-1 - 86810H-7, XP055141260, ISSN: 0277-786X, DOI: 10.1117/12.2011615 * |
DING QI ET AL: "A New Inspection Method for a EUV Mask Defect Inspection System", 26 June 2014 (2014-06-26), National Taiwan University, Taipei, Taiwan, pages 1 - 27, XP055141482, Retrieved from the Internet <URL:http://www.euvlitho.com/2014/P63.pdf> [retrieved on 20140919] * |
HARADA TETSUO ET AL: "Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 29, no. 6, 1 November 2011 (2011-11-01), pages 6F503-1 - 6F503-7, XP012154901, ISSN: 1071-1023, [retrieved on 20111103], DOI: 10.1116/1.3657525 * |
HARADA TETSUO ET AL: "The coherent EUV scatterometry microscope for actinic mask inspection and metrology", PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XVIII, SPIE, 1000 20TH ST. BELLINGHAM WA 98225-6705 USA, vol. 8081, no. 1, 29 April 2011 (2011-04-29), pages 1 - 9, XP060015146, DOI: 10.1117/12.896576 * |
J. DOH ET AL., J. KOREAN PHYSICAL SOC., vol. 57, 2010, pages 1486 |
JAP. J. APPL. PHYS., vol. 49, 2010, pages 06GD07 - 1 |
K. A. GOLDBERG ET AL., JVST B, vol. 27, 2009, pages 2916 |
K. A. GOLDBERG ET AL., PROC. SPIE, vol. 7969, 2011, pages 796910 |
K. A. GOLDBERG; I. MOCHI, JVST B, 2010, pages C6E1 |
LEE SANGSUL ET AL: "A novel concept for actinic EUV mask review tool using a scanning lensless imaging method at the Swiss Light Source", PROCEEDINGS OF SPIE, S P I E - INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, US, vol. 9048, 17 April 2014 (2014-04-17), pages 904811-1 - 904811-7, XP060030804, ISSN: 0277-786X, DOI: 10.1117/12.2046226 * |
MAIDEN A M ET AL: "An improved ptychographical phase retrieval algorithm for diffractive imaging", ULTRAMICROSCOPY, ELSEVIER, AMSTERDAM, NL, vol. 109, no. 10, 1 September 2009 (2009-09-01), pages 1256-1 - 1262-6, XP026470501, ISSN: 0304-3991, [retrieved on 20090606], DOI: 10.1016/J.ULTRAMIC.2009.05.012 * |
S. ROY ET AL., NATURE PHOTONICS, vol. 5, 2011, pages 243 |
SANDBERG ET AL., OPTICS LETTERS, vol. 34, 2009, pages 1618 |
T. HARADA ET AL., JVST B, vol. 27, 2009, pages 3203 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016138772A (en) * | 2015-01-27 | 2016-08-04 | 国立研究開発法人理化学研究所 | Imaging device and imaging method |
WO2017025373A1 (en) * | 2015-08-12 | 2017-02-16 | Asml Netherlands B.V. | Inspection apparatus, inspection method and manufacturing method |
US9823586B2 (en) | 2015-08-12 | 2017-11-21 | Asml Netherlands B.V. | Inspection apparatus, inspection method and manufacturing method |
EP3208657A1 (en) * | 2016-02-22 | 2017-08-23 | Paul Scherrer Institut | Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain |
WO2017144252A1 (en) * | 2016-02-22 | 2017-08-31 | Paul Scherrer Institut | Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain |
KR20180133392A (en) * | 2016-02-22 | 2018-12-14 | 폴 슈레 앙스띠뛰 | Method and system for high throughput defect inspection using contrast in reduced spatial frequency domain |
TWI673490B (en) * | 2016-02-22 | 2019-10-01 | 瑞士商保羅謝勒硏究所 | Method for scanning scattering contrast inspection and system for scanning scatteringcontrast inspection |
US10444623B2 (en) | 2016-02-22 | 2019-10-15 | Paul Scherrer Institut | Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain |
KR102098027B1 (en) | 2016-02-22 | 2020-04-08 | 폴 슈레 앙스띠뛰 | Method and system for high-throughput defect inspection using contrast in a reduced spatial frequency domain |
Also Published As
Publication number | Publication date |
---|---|
KR20160021223A (en) | 2016-02-24 |
JP2016526702A (en) | 2016-09-05 |
EP3011389A1 (en) | 2016-04-27 |
US20160154301A1 (en) | 2016-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20160154301A1 (en) | Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography | |
JP7071562B2 (en) | Image-based model-based weighing systems and methods | |
JP6211270B2 (en) | Inspection system and method for defect detection of extreme ultraviolet mask blanks | |
US8982358B2 (en) | Apparatus and method of measuring roughness and other parameters of a structure | |
TWI586949B (en) | Wave front aberration metrology of optics of euv mask inspection system | |
US20150226539A1 (en) | System and method for determining the position of defects on objects, coordinate measuring unit and computer program for coordinate measuring unit | |
TWI448661B (en) | Interferometer utilizing polarization scanning | |
KR102326190B1 (en) | Method and apparatus for inducing correction, method and apparatus for determining properties of structures, method for manufacturing devices | |
KR20190049890A (en) | Defect marking for semiconductor wafer inspection | |
JP6561110B2 (en) | How to identify the location of defects on a substrate | |
KR102098027B1 (en) | Method and system for high-throughput defect inspection using contrast in a reduced spatial frequency domain | |
WO2016179926A1 (en) | Fast and high-spatial resolution wave aberration in-situ detection apparatus and method for lithography machine | |
KR102630492B1 (en) | Method and system for characterizing optical surface defect materials | |
JP2012530929A (en) | Object inspection system and method | |
EP3032243A1 (en) | Method and system for optical sample inspection using coherent diffraction imaging and a-priori knowledge of the sample | |
US10459347B2 (en) | Inspection method, inspection apparatus and illumination method and apparatus | |
Harada et al. | Phase imaging of EUV masks using a lensless EUV microscope | |
Sohn et al. | 193 nm angle-resolved scatterfield microscope for semiconductor metrology | |
KR101262269B1 (en) | 3-dimensional image acquisition system for mask pattern inspection and method thereof | |
KR101274609B1 (en) | 3-dimensional image acquisition system for mask pattern inspection and method thereof | |
Wei et al. | Parameter retrieval methods in ptychography | |
Tiziani | Image Analysis for Micro-and Macrostructure Measurement | |
Juschkin et al. | Oleksiy Maryasov |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14729248 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014729248 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2016520344 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14899235 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20167000936 Country of ref document: KR Kind code of ref document: A |