WO2014200219A1 - Appareil de réaction par décharge à barrière diélectrique pour la production de disilane, de trisilane, et de tétrasilane - Google Patents

Appareil de réaction par décharge à barrière diélectrique pour la production de disilane, de trisilane, et de tétrasilane Download PDF

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Publication number
WO2014200219A1
WO2014200219A1 PCT/KR2014/004908 KR2014004908W WO2014200219A1 WO 2014200219 A1 WO2014200219 A1 WO 2014200219A1 KR 2014004908 W KR2014004908 W KR 2014004908W WO 2014200219 A1 WO2014200219 A1 WO 2014200219A1
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WO
WIPO (PCT)
Prior art keywords
discharge
discharge electrode
housing
disilane
tetrasilane
Prior art date
Application number
PCT/KR2014/004908
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English (en)
Korean (ko)
Inventor
유이치이이쿠보
장향자
Original Assignee
Yuichi Iikubo
Jang Hyang-Ja
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Filing date
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Application filed by Yuichi Iikubo, Jang Hyang-Ja filed Critical Yuichi Iikubo
Publication of WO2014200219A1 publication Critical patent/WO2014200219A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0824—Details relating to the shape of the electrodes
    • B01J2219/0826—Details relating to the shape of the electrodes essentially linear
    • B01J2219/083—Details relating to the shape of the electrodes essentially linear cylindrical
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0871—Heating or cooling of the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas

Definitions

  • the present invention relates to a DBD (Dielectric Barrier Discharge) reactor capable of continuously producing disilane, trisilane and tetrasilane in silane.
  • DBD Dielectric Barrier Discharge
  • disilane can be made from silane, but there are pyrolysis reactions and catalytic reactions, but the yields of these processes do not exceed 2 to 3%.
  • thermodynamic velocities of many reactions that can be carried out in silane are similar to each other, making it difficult to control the reaction into disilane. It is coincident with the decomposition reaction.
  • DBD Dielectric Barrier Discharge
  • the present invention has been urgently required to solve the above problems and to develop a reactor capable of continuously producing disilane, trisilane, and tetrasilane from silane.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide a DBD (Dielectric Barrier Discharge) reaction apparatus that can continuously produce disilane, trisilane, tetrasilane in silane
  • a DBD Dielectric Barrier Discharge
  • the reaction zone and the condensation zone are partitioned, and the separation distance between the discharge electrode and the discharge housing or the discharge electrode and the porous tube is adjusted.
  • the present invention provides a general purpose dielectric barrier discharge reaction apparatus that can be used not only for the manufacturing process but also for the production of disilane, trisilane, and tetrasilane.
  • the present invention as a means for solving the above problems, the discharge housing 10, the source gas is introduced into the inside, the reaction gas is discharged; A discharge electrode rod 20 connected to the high frequency generation connecting device and discharged by being installed in the discharge housing 10; An insulating member 30 installed at an outer circumference of the discharge electrode 20 in the discharge housing 10; Cooling means 40 is installed on the outer periphery of the discharge housing 10, so as to adjust the reaction temperature of the discharge housing 10 to be heated; Characterized in that it comprises a.
  • the present invention has the effect that can be produced in a high yield of disilane, trisilane, tetrasilane.
  • the present invention has the effect that the continuous production of disilane and trisilane and tetrasilane.
  • the present invention has a simple configuration compared to the conventional reactor, and is easy to manufacture, and has an advantageous effect in terms of stability and economy.
  • FIG. 1 is a front cross-sectional view of a first embodiment showing a dielectric barrier discharge reaction apparatus for the production of disilane, trisilane and tetrasilane according to the present invention.
  • Figure 2 is a front sectional view of a second embodiment showing a dielectric barrier discharge reactor for the production of disilane, trisilane and tetrasilane according to the present invention.
  • Figure 3 is a front sectional view of a third embodiment showing a dielectric barrier discharge reaction apparatus for the production of disilane, trisilane and tetrasilane according to the present invention.
  • reaction gas outlet 13 source gas outlet
  • reaction zone B condensation zone
  • the present invention has the following features to achieve the above object.
  • the discharge housing 10 the source gas is introduced into the inside, the reaction gas is discharged;
  • a discharge electrode rod 20 connected to the high frequency generation connecting device and discharged by being installed in the discharge housing 10;
  • An insulating member 30 installed at an outer circumference of the discharge electrode 20 in the discharge housing 10;
  • Cooling means 40 is installed on the outer periphery of the discharge housing 10, so as to adjust the reaction temperature of the discharge housing 10 to be heated; Characterized in that it comprises a.
  • the discharge housing 10 the source gas is introduced into the inside, the reaction gas is discharged;
  • a discharge electrode rod 20 connected to the high frequency generation connecting device and discharged by being installed in the discharge housing 10;
  • An insulating member 30 installed at an outer circumference of the discharge electrode 20 in the discharge housing 10;
  • Cooling means 40 is installed on the outer periphery of the discharge housing 10, so as to adjust the reaction temperature of the discharge housing 10 to be heated;
  • the discharge electrode 20 is installed in the discharge housing 10 so that the space between the discharge electrode 20 and the discharge housing 10 is divided into a reaction zone A and a condensation zone B, It is characterized in that the generated reaction gas can quickly exit through the porous tube 50 without being exposed to the discharge for a long time in the reaction zone.
  • the discharge housing 10, the insulator 14 is formed on the inner circumference;
  • a discharge electrode rod 20 installed in the discharge housing 10 and having a source gas introduced therein, a reaction gas discharged, and discharged in connection with a high frequency generation connecting device;
  • An insulating member 30 installed at an inner circumference of the discharge electrode 20;
  • Cooling means 40 is installed through the discharge electrode 20, to adjust the reaction temperature of the discharge housing 10 is heated by condensing the reaction gas;
  • the porous pipe member 50 is installed between the discharge electrode 20 and the cooling means 40 to partition the space between the discharge electrode 20 and the cooling means 40 into the reaction zone A and the condensation zone B. ); Characterized in that it comprises a.
  • the discharge electrode 20 is characterized in that it is insulated from the discharge housing 10 through the insulating bushing 61, the insulating gasket 62 and the insulating member 30.
  • the discharge housing 10 and the discharge electrode 20 is characterized in that the metal material through which electricity is used.
  • the insulating member 30 is characterized in that any one of PFA (Perfluoro alkoxy), PTFE (Polytetrafluoroethylene), Glass (glass), Quartz (quartz), Ceramic (ceramic), Silicon rubber (silicon rubber) is used do.
  • PFA Perfluoro alkoxy
  • PTFE Polytetrafluoroethylene
  • Glass glass
  • Quartz quartz
  • Ceramic ceramic
  • Silicon rubber silicon rubber
  • the discharge electrode 20 and the porous tube member 50 is characterized in that between the discharge electrode 20 and the porous tube member 50 to maintain a distance of 0.5 to 3mm from each other.
  • reaction zone (A) and the condensation zone (B) is characterized in that partitioned by the volume ratio of 10: 1 ⁇ 1:10.
  • the dielectric barrier discharge reaction apparatus for the production of disilane, trisilane and tetrasilane is capable of continuously producing not only disilane but also trisilane, tetrasilane, etc.
  • the housing 10, the discharge electrode 20, the insulating member 30, the cooling means 40, and the porous tube 50 is included.
  • the dielectric barrier discharge reaction apparatus for producing such disilane, trisilane and tetrasilane of the present invention has three embodiments.
  • Dielectric barrier discharge reaction apparatus for the production of disilane, trisilane and tetrasilane of the first embodiment is, as shown in Figure 1, a basic pipe type using Dielectric barrier discharge (DBD, dielectric barrier discharge), discharge housing 10, the discharge electrode 20, the insulating member 30 and the cooling means (not shown).
  • DBD Dielectric barrier discharge
  • the discharge housing 10 has a tubular shape of which the upper and lower ends thereof are opened and the inside thereof is empty, and a raw material gas (for example, silane (SiH 4) gas, helium gas, hydrogen gas mixture, etc.) is disposed on the upper end of the discharge housing 10.
  • a raw material gas for example, silane (SiH 4) gas, helium gas, hydrogen gas mixture, etc.
  • Source gas injection port 11 for introducing the gas is formed, the reaction gas outlet 12 for discharging the reaction gas (for example, disilane, trisilane, tetrasilane, etc.) generated in the discharge housing 10 is Formed.
  • the discharge electrode 20 is in the form of a metal pipe or metal rod, is a predetermined length in the interior of the discharge housing 10 described above, protrudes a predetermined portion to the upper end of the discharge electrode 20, the high frequency installed outside To be connected to the high-frequency generating connection device (not shown) to generate.
  • the high frequency generator is a frequency for resonation (resonation) is determined according to the reaction conditions for 120V, in the present invention was maintained at 20 ⁇ 100kHz, preferably 20 ⁇ 50kHz.
  • the insulating member 30 is formed on the outer periphery of the above-described discharge electrode 20, and is formed in a tube form so as to be integrated with the discharge electrode 20, whereby the discharge electrode 20 is discharge housing Direct energization with (10) is prevented.
  • the cooling means (not shown) is installed on the outer circumference of the discharge housing 10 described above, and the inlet 41 and the outlet 42 through which various cooling members (for example, refrigerant) are introduced and discharged are formed.
  • the discharge housing so that the internal temperature of the discharge housing 10 heated by separate heating means (for example, various equipment capable of heating the discharge housing 10 such as a heater) can be a predetermined reaction temperature desired by the user. By cooling (10), the reaction temperature can be adjusted.
  • the cooling means for this purpose is a cooling coil wound around the outer periphery of the discharge housing 10 in the form of a coil, or a cooling jacket that covers the outer periphery of the discharge housing 10 because the inside thereof is hollow in the longitudinal direction. ) Can be installed in the form.
  • the discharge electrode 20 penetrates the center of the discharge housing 10 in which the discharge electrode 20 is installed, and discharges through an insulating bushing 60 coupled to the discharge housing 10.
  • the electrode 20 and the discharge housing 10 are completely insulated from each other, and all the devices connected to the discharge housing 10 except for the pipe connected to the discharge electrode 20 and the high frequency generating connection device (not shown) are grounded. Should be.
  • the yield from the silane (Silane) to the disilane (Disilane) conditions (raw material gas, high frequency generation connection device According to the frequency, the distance between the discharge electrode 20 and the discharge housing 10, the internal temperature of the discharge housing 10, etc., about 35-85%, and not only disilane but also trisilane and tetrasilane. It is possible to make) continuously.
  • Cryogenic Reaction System which is particularly effective at low temperature reactions, is a porous pipe type device that can efficiently exit the discharge housing 10 without negative effects such as reducing the reaction zone (A) area. Reactor for cryogenic reaction system).
  • the second embodiment for this purpose includes a discharge housing 10, the discharge electrode 20, the insulating member 30, the cooling means 40, the porous tube 50, the discharge housing 10, the discharge electrode 20 ),
  • the insulating member 30, the cooling means 40 is similar to the first embodiment described above.
  • the discharge housing 10 is open at both ends and empty inside, and is provided with flanges 63, insulating bushings 60 and 61, and insulating gaskets 62 at both ends, and source gas flows into upper and lower ends, respectively.
  • a source gas inlet 11 for discharging, a source gas outlet 13 for discharging the used source gas, and a reaction gas outlet 12 for discharging the reaction gas generated in the discharge housing 10 in a liquid state. are formed respectively.
  • the discharge electrode 20 is electrically connected to the high frequency generation connecting device, which is installed in the discharge housing 10 described above, the insulating member 30 is formed on the outer periphery, the upper end of the insulating bushing (60) A predetermined length protrudes to the outside through the through, and the insulating bushing 61 is installed at the end located in the discharge housing 10 so that the porous tube 50 to be described later is fixed at a predetermined distance from the electrode.
  • inlet 41 and the outlet 42 of the cooling member are formed on the outer circumference of the discharge housing 10, and cooling means 40 for controlling the reaction temperature in the discharge housing 10 is provided.
  • the porous tube 50 is a tube having a plurality of holes on the outer periphery (hole size of the porous tube 50 is 2 to 3mm and has a 20 to 30% opening and closing rate).
  • the discharge electrode 20 described above is positioned in the discharge porous tube 50. That is, the porous pipe member 50 is located between the discharge housing 10 and the discharge electrode 20, and maintained in a spaced state without contacting any components of the porous pipe member 50 and the discharge housing 10.
  • the reaction zone A is formed inside the porous tube 50 (between the porous tube 50 and the discharge electrode 20), and the outside of the porous tube 50 (the porous tube 50 and the discharge housing). Between (10), a condensation zone (B) is formed. At this time, the volume ratio of the reaction zone (A) and the condensation zone (B) is preferably about 2: 3.
  • An example of a second embodiment configured as above is as follows.
  • Pipe type discharge housing 10 of flange type 63 of 1 inch 600 mm, 3/4 inch porous tube 50, 1/4 inch discharge electrode 20, 3/8 inch PFA insulation member 30 By assembling the reaction apparatus according to the second embodiment (dielectric barrier discharge reaction apparatus for the production of disilane, trisilane and tetrasilane of the present invention), the discharge electrode 20 is connected to the high frequency generator, the reaction apparatus And associated devices are grounded.
  • the cooling means 40 is provided in the discharge housing 10. Rather than being installed in the form of a jacket or coil outside, it is installed in the center of the discharge housing 10, and serves to condense the reaction gas generated by the reaction in the center.
  • a third embodiment for this purpose includes a discharge housing 10, the discharge electrode 20, the insulating member 30, the cooling means 40, the porous tube 50.
  • the discharge housing 10 has an upper and a lower end open and the inside is empty, the upper and lower ends are provided with an insulating gasket 62 and a flange 63, the lower end is provided with a heat insulating material 70, A raw gas inlet 11 for forming a raw material gas is formed at an upper end of the outer circumferential edge, and a reaction gas outlet 12 protruding to the outside is formed at a lower end thereof through a heat insulating material 70. Moreover, the insulator 14 is integrally formed in the inner periphery.
  • the discharge electrode 20 is formed in the upper and lower ends, and is spaced apart in the longitudinal direction in the discharge housing 10 described above in a state that the insulating member 30 is formed on the inner circumference, the discharge housing It is to be connected to the power terminal of the high frequency generation connecting device 21 or the high frequency generation connecting device 21 provided on the outer periphery of (10).
  • the discharge electrode 20 is to be installed in the discharge housing 10, the insulating bushing 61 is installed on the upper end of the discharge electrode (20).
  • the raw material gas introduced through the raw material gas injection port 11 formed in the discharge housing 10 has an insulator 14 between the discharge housing 10 and the discharge electrode rod 20, so that the raw material gas flows therebetween. Is not introduced, and is introduced into the discharge electrode 20 in the discharge housing 10.
  • the discharge housing 10 and the discharge electrode 20 is spaced apart from each other, but the discharge electrode 20 is present near the wall of the discharge housing 10, the insulator 14 on the inner periphery of the discharge housing 10 ) Is installed so that the insulator 14 located between the discharge housing 10 and the discharge electrode 20 does not conduct electricity to each other.
  • the cooling means 40 is internally spaced apart from the inside of the discharge electrode 20 described above, one end so as to project through the upper flange 63 of the discharge housing (10).
  • an inlet 41 and an outlet 42 are formed at the protruding upper side, respectively, to allow inflow and outflow of the cooling member, among which the inlet pipe 43 formed at the inlet 41 is formed inside the cooling means 40. It should be shaped to be embedded in the longitudinal direction.
  • the porous tube 50 is installed between the cooling means 40 and the discharge electrode 20 as described above, and the reaction zone A between the cooling means 40 and the discharge electrode 20, as in the second embodiment. (Between the inner circumference of the discharge electrode 20 and the outer circumference of the porous tube 50) and the condensation zone B (between the inner circumference of the porous tube 50 and the outer circumference of the cooling means 40).
  • the upper end of the porous tube 50 is insulated using the insulator (61).
  • the cooling means 40 is in the porous tube 50, the porous tube 50 is in the discharge electrode 20, and the discharge electrode 20 is in the discharge housing 10. It has a quadruple configuration.
  • the third embodiment is configured as described above, the volume of the reaction zone (A) is larger than the volume of the condensation zone (B), which is a matter related to the inner diameter in the pipe-type reactor.
  • the volume of the reaction zone (A) is larger than the volume of the condensation zone (B)
  • more reaction gas enters the reaction zone (A), thereby increasing efficiency.
  • the yield of silane to disilane was increased by about 10% or more compared to the second example.
  • the discharge housing 10 and the discharge electrode 20 is a pipe made of a metal material, the metal material is electricity is supplied, stainless steel (steel), carbon steel (carbon steel), copper (copper), Alumina Various metals can be used by the user such as (alumina).
  • the insulating member 30 may be any one of perfloro alkoxy (PFA), polytetrafluoroethylene (PTFE), glass (glass), quartz (quartz), ceramic (ceramic), and silicon rubber (silicone rubber). (Of these, PFA has the largest electrical insulation properties, the lowest dissipation factor (electronic loss), and has excellent durability.)
  • PFA perfloro alkoxy
  • PTFE polytetrafluoroethylene
  • glass glass
  • quartz quartz
  • ceramic ceramic
  • silicon rubber silicon rubber
  • the separation distance (gap) between the discharge housing 10 and the discharge electrode 20 is 0.5 to 3mm and preferably 1 to 2mm, the discharge electrode 20 wrapped with the insulating member 30 And the separation distance (gap) between the porous tube 50 is 0.5 to 3mm and preferably 1 to 2mm.
  • volume ratio of the reaction zone (A) volume and the condensation zone (B) in the second and third embodiments is 10: 1 to 1:10, but preferably 3: 2 to 2: 3.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un appareil de réaction par décharge à barrière diélectrique pour la production de disilane, de trisilane, et de tétrasilane et, plus spécifiquement, un appareil de réaction par décharge à barrière diélectrique pour la production de disilane, de trisilane, et de tétrasilane, qui est apte à produire non seulement du disilane mais également du trisilane et du tétrasilane à partir de silane en un processus continu, et qui comporte : une tige d'électrode de décharge reliée à un appareil à haute fréquence ; et un tube poreux entourant l'extérieur de la tige d'électrode de décharge, l'appareil de réaction présentant un rendement élevé tout en étant apte à produire de façon continue du disilane, du trisilane et du tétrasilane à partir de silane par un ajustement du matériau de la tige d'électrode de décharge, de la distance entre la tige d'électrode de décharge et le tube poreux, et autres.
PCT/KR2014/004908 2013-06-11 2014-06-03 Appareil de réaction par décharge à barrière diélectrique pour la production de disilane, de trisilane, et de tétrasilane WO2014200219A1 (fr)

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Application Number Priority Date Filing Date Title
KR10-2013-0066750 2013-06-11
KR1020130066750A KR101538388B1 (ko) 2013-06-11 2013-06-11 디실란과 트리실란과 테트라실란의 제조를 위한 유전체 장벽 방전 반응장치

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020211833A1 (de) 2020-09-22 2022-03-24 Evonik Operations Gmbh Verfahren zur Herstellung oligomerer Hydridosilane aus SiH4

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478453A (en) * 1993-03-11 1995-12-26 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for preparing disilane from monosilane by electric discharge and cryogenic trapping
US6221155B1 (en) * 1997-12-15 2001-04-24 Advanced Silicon Materials, Llc Chemical vapor deposition system for polycrystalline silicon rod production
KR100893183B1 (ko) * 2008-06-24 2009-04-15 (주)티에스티아이테크 레이저 여기 화학기상 증착법을 이용한 폴리실리콘의제조장치 및 방법
KR20090047503A (ko) * 2006-07-31 2009-05-12 테크나 플라즈마 시스템 인코포레이티드 유전체 장벽 방전을 이용하는 플라즈마 표면 처리
US20110305604A1 (en) * 2009-01-22 2011-12-15 Schmid Silicon Technology Gmbh Reactor for producing polycrystalline silicon using the monosilane process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478453A (en) * 1993-03-11 1995-12-26 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for preparing disilane from monosilane by electric discharge and cryogenic trapping
US6221155B1 (en) * 1997-12-15 2001-04-24 Advanced Silicon Materials, Llc Chemical vapor deposition system for polycrystalline silicon rod production
KR20090047503A (ko) * 2006-07-31 2009-05-12 테크나 플라즈마 시스템 인코포레이티드 유전체 장벽 방전을 이용하는 플라즈마 표면 처리
KR100893183B1 (ko) * 2008-06-24 2009-04-15 (주)티에스티아이테크 레이저 여기 화학기상 증착법을 이용한 폴리실리콘의제조장치 및 방법
US20110305604A1 (en) * 2009-01-22 2011-12-15 Schmid Silicon Technology Gmbh Reactor for producing polycrystalline silicon using the monosilane process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020211833A1 (de) 2020-09-22 2022-03-24 Evonik Operations Gmbh Verfahren zur Herstellung oligomerer Hydridosilane aus SiH4
WO2022063680A1 (fr) 2020-09-22 2022-03-31 Evonik Operations Gmbh Procédé pour la préparation d'hydrosilanes oligomères à partir de sih4

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KR101538388B1 (ko) 2015-07-22
KR20140144594A (ko) 2014-12-19

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