WO2014190675A1 - 退火装置和退火工艺 - Google Patents

退火装置和退火工艺 Download PDF

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Publication number
WO2014190675A1
WO2014190675A1 PCT/CN2013/086975 CN2013086975W WO2014190675A1 WO 2014190675 A1 WO2014190675 A1 WO 2014190675A1 CN 2013086975 W CN2013086975 W CN 2013086975W WO 2014190675 A1 WO2014190675 A1 WO 2014190675A1
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Prior art keywords
substrate
unit
gradient
annealing
high temperature
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PCT/CN2013/086975
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English (en)
French (fr)
Inventor
王祖强
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US14/368,924 priority Critical patent/US9585195B2/en
Publication of WO2014190675A1 publication Critical patent/WO2014190675A1/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

  • Embodiments of the invention relate to an annealing apparatus and an annealing process. Background technique
  • amorphous silicon amorphous silicon
  • LTPS low temperature poly-Silicon
  • oxide semiconductors have emerged.
  • Low-temperature polysilicon TFTs and oxide semiconductor TFTs have attracted more attention than conventional amorphous silicon (a-Si) TFTs, and are considered to be the most ideal backplane for LCDs and organic electroluminescent displays (OLEDs) in the future.
  • the annealing process is important in the preparation of low temperature polysilicon TFTs and oxide semiconductor TFTs, directly affecting TFT characteristics.
  • the conventional annealing device generally has a single function and a long annealing time; the conventional annealing device is heated by a heating wire or heated by a halogen lamp, and the substrate is relatively damaged. Summary of the invention
  • Embodiments of the present invention provide an annealing apparatus and an annealing process that can reduce annealing time and improve efficiency.
  • An aspect of the invention provides an annealing apparatus, comprising: a temperature gradient preheating unit for performing gradient preheating on a substrate to be annealed at a gradient temperature; and a high temperature heating unit for performing high temperature heating on the preheated substrate; And a moving device for transporting the substrate from the temperature gradient preheating unit to the high temperature heating unit when the substrate is subjected to gradient preheating and/or after preheating.
  • the moving device may include: a guide rail; a carrying platform for carrying the substrate to be annealed, the carrying platform being movably disposed on the rail.
  • the temperature gradient preheating unit includes a plurality of first strobe lights arranged in a moving direction of the substrate, and the power of the first strobe light in a moving direction of the substrate The order is increased in order to achieve gradient preheating of the substrate as the substrate moves.
  • the plurality of first strobe lights are uniformly distributed in the temperature gradient preheating unit.
  • the high temperature heating unit includes a plurality of second strobe lights arranged in the moving direction of the substrate.
  • the plurality of second strobe lights are uniformly distributed in the high temperature heating unit.
  • the first strobe lamp and the second strobe lamp have the same structure, and the first strobe lamp includes a quartz tube for containing an inert gas, and is disposed in the quartz Both ends of the tube are used to connect the cathode and anode of the external voltage.
  • the inert gas is helium.
  • the high temperature heating unit is provided with an electromagnetic field generator for generating a varying magnetic field.
  • a plasma inducing unit for plasma processing a substrate is provided between the temperature gradient preheating unit and the high temperature heating unit, and plasma is provided in the plasma inducing unit generator.
  • Another aspect of the present invention provides an annealing process implemented by the above annealing apparatus, comprising: performing gradient preheating on a substrate to be annealed by a temperature gradient preheating unit by using a gradient temperature; and performing preheating on the substrate by a high temperature heating unit High temperature heating; wherein, when the substrate is subjected to gradient preheating and/or preheating, the substrate is transported from the temperature gradient preheating unit to the high temperature heating unit.
  • the method may further include: performing plasma treatment on the substrate by the plasma inducing unit before performing high temperature heating on the preheated substrate.
  • high temperature heating of the preheated substrate may include: applying a varying magnetic field to the substrate by the electromagnetic field generator to increase the movement of ions within the plate.
  • the embodiment of the present invention pre-heats the substrate by gradient heating to improve the annealing efficiency.
  • FIG. 1 is a schematic view showing the structure of an annealing apparatus in an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a stroboscopic lamp in an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a high temperature heating unit in an embodiment of the present invention.
  • Figure 4 is a flow chart showing the annealing process in the embodiment of the present invention. detailed description
  • an embodiment of the present invention provides an annealing apparatus.
  • the annealing apparatus includes: a temperature gradient preheating unit 100 for performing gradient preheating on a substrate 600 to be annealed at a gradient temperature;
  • the unit 300 is configured to perform high temperature heating on the preheated substrate 600; and a moving device for transporting the substrate 600 from the temperature gradient preheating unit 100 to the substrate 600 after gradient preheating and/or preheating The high temperature heating unit 300.
  • the annealing apparatus of this embodiment uses a gradient heating method to preheat the substrate 600 to improve the annealing efficiency.
  • the moving device includes a guide rail 400 and a carrier 500 for carrying a substrate 600 to be annealed, the carrier 500 being movably disposed on the rail 400.
  • the temperature gradient preheating unit 100 includes a plurality of first strobe lights 700 arranged along the moving direction of the substrate 600, and the power of the first strobe light 700 increases sequentially along the moving direction of the substrate 600. Gradient preheating of the substrate 600 is achieved.
  • the power of each of the first strobe lamps 700 can be set as needed, as long as the temperature gradient for heating the substrate 600 can be achieved, and the annealing efficiency is improved.
  • the annealing device in the embodiment includes an accommodating space, and the temperature gradient preheating unit 100 and the high temperature heating unit 300 are disposed at different portions of the accommodating space.
  • the temperature The gradient preheating unit 100 and the high temperature heating unit 300 may be located above the guide rail 400 and sequentially disposed along the moving direction of the loading table 500.
  • the gradient may be sequentially increased, that is, the power of the first strobe light 700 is controlled.
  • a strobe light 700 is uniformly distributed in the temperature gradient preheating unit 100.
  • the plurality of first strobe lights 700 may be the same distance from the guide rail 400.
  • the manner in which the plurality of the first strobe lamps 700 are disposed is not limited to the manner in which the distances of the plurality of first strobe lamps 700 from the guide rails 400 are the same.
  • the power of the first strobe light 700 is the same, and the temperature gradient of the heating of the substrate 600 is realized by a plurality of arrangement manners in which the distance between the first strobe light 700 and the guide rail 400 is different.
  • a plurality of second strobe lights 701 are disposed in the high temperature heating unit 300 in a direction parallel to the guide rails 400.
  • the plurality of second strobe lights 701 may be hooked on the high temperature heating unit 300. Inside. And in operation, the plurality of second strobe lights 701 may be the same as the large distance of the guide rail 400.
  • the power of the second strobe light 701 may be greater than, equal to, or smaller than the power of the first strobe light 700 of the plurality of the first strobe lights 700, and the power of the plurality of second strobe lights 701 may be The same can also be different, depending on the actual annealing needs.
  • the high temperature heating unit 300 is provided with an electromagnetic field generator 800 for generating a varying magnetic field, which may be disposed above the guide rail 400. Under the action of the electromagnetic field, the ion motion in the substrate 600 can be accelerated to improve the annealing efficiency.
  • the electromagnetic field generator 800 is disposed above the second strobe light 701.
  • a plasma inducing unit 200 for plasma processing the substrate 600 is disposed between the temperature gradient preheating unit 100 and the high temperature heating unit 300, and a plasma generator 201 is disposed in the plasma inducing unit 200.
  • the arrangement of the plasma inducing unit 200 increases the function of the annealing device.
  • the plasma generator when the substrate 600 is subjected to hydrogenation treatment, the plasma generator generates a hydrogen-rich plasma, and the surface of the substrate is processed to accelerate the diffusion of ions in the substrate, which is advantageous.
  • the hydrogenation efficiency is increased; the generated plasma can also be used to etch the surface of the substrate 600 as needed to achieve smooth processing of the substrate 600, The surface of the substrate 600 forms a smooth plane.
  • the structures of the first strobe light 700 and the second strobe light 701 may be identical to each other, and the first strobe light 700 includes a quartz tube 702 for accommodating an inert gas, and is disposed at Both ends of the quartz tube 702 are used for a cathode 703 and an anode 704 that communicate with an external voltage.
  • the inert gas may be helium.
  • the pulse time (50-100 ⁇ ⁇ ) of the first strobe lamp 700 and the second strobe lamp 701 using helium is shorter than the pulse time (on the order of ms) of the halogen lamp; the pulse duration is shorter, so the substrate is damaged. smaller.
  • LTPS low temperature polysilicon
  • the dependence of LTPS on annealing is more intense.
  • the biggest difference between the LTPS process and the conventional amorphous silicon process is that there are many heat treatment processes, generally including dehydrogenation (dehydrogenation). , ion activation, hydrogen diffusion (hydrogenation), and the like.
  • dehydrogenation dehydrogenation
  • ion activation hydrogen diffusion
  • hydrogenation hydrogen diffusion
  • the precise control of annealing time and temperature has a significant impact on the performance of the LTPS TFT, so annealing equipment is very important to the LTPS process.
  • the time to anneal to crystallization during the preparation of the LTPS is typically less than 600 degrees Celsius.
  • the substrate 600 first enters the temperature gradient preheating unit 100, and the temperature gradient preheating unit 100 uses a temperature gradient design to interactively change a plurality of first strobes.
  • the power of the lamp 700 is such that there is a gradient in the temperature of the heating substrate 600, which can greatly improve the efficiency of removing hydrogen; the substrate 600 then enters the plasma inducing unit 200; the substrate 600 finally enters the high temperature heating unit 300 including the electromagnetic field generator 800, second
  • the strobe light 701 heats the substrate 600 at a high temperature, and under the auxiliary action of the electromagnetic field, the hydrogen ions escape faster, and the dehydrogenation efficiency can be improved.
  • the plasma inducing unit 200 can be used as an alternative to set its on/off state as needed; moreover, the electromagnetic field generated by the electromagnetic field generator 800 functions as an auxiliary annealing treatment in the high temperature heating unit 300, and may also ⁇ Control the switch state according to actual needs.
  • the substrate 600 first enters the temperature gradient preheating unit 100, and the temperature gradient preheating unit 100 uses a temperature gradient design to interactively change the power of the first strobe light 700.
  • the temperature of the heating is gradiented, so that the activity of the ion movement can be greatly improved;
  • the substrate 600 then enters the plasma inducing unit 200, and the surface of the substrate 600 can be treated with a hydrogen-rich plasma, which is advantageous for improving the hydrogenation efficiency;
  • the high-frequency heating unit 300 includes an electromagnetic field generator 800.
  • the second strobe light 701 heats the substrate 600 at a high temperature, and under the action of the changing electromagnetic field, facilitates the movement of hydrogen ions into the target layer. Improve hydrogenation efficiency.
  • the substrate 600 first enters the temperature gradient preheating unit 100, and the temperature gradient preheating unit 100 adopts a temperature gradient design to interactively change the first stroboscopic
  • the power of the lamp 700 is such that there is a gradient in the temperature of the heating substrate 600, which can greatly increase the activity of ion movement; the substrate 600 then enters the plasma inducing unit 200; the substrate 600 finally enters the high temperature heating unit 300 including the electromagnetic field generator 800, and second
  • the strobe light 701 heats the substrate 600 at a high temperature and, under the action of a varying electromagnetic field, facilitates ion movement and improves activation efficiency.
  • the plasma inducing unit 200 can be used as an alternative to set the on/off state as needed.
  • an embodiment of the present invention also provides an annealing process by the above annealing apparatus, which can be carried out as follows.
  • the substrate to be annealed is subjected to gradient preheating by a temperature gradient preheating unit; the preheated substrate is heated at a high temperature by a high temperature heating unit. And, the substrate is transported from the temperature gradient preheating unit to the high temperature heating unit when the substrate is subjected to gradient preheating and/or preheating.
  • the method further includes: performing plasma treatment on the substrate by the plasma inducing unit.
  • An example of high temperature heating of a preheated substrate includes: applying a varying magnetic field to the substrate by an electromagnetic field generator to add movement of ions within the plate.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

一种退火装置包括：温度梯度预热单元（100），用于采用梯度温度对待退火的基板（600）进行梯度预热；高温加热单元（300），用于对经过预热的基板（600）进行高温加热；移动装置，用于在基板经过梯度预热时和/或预热后，将基板（600）从所述温度梯度单元（100）运送至所述高温加热单元。该退火装置采用梯度加热的方式，对基板（600）进行预热处理，提高了退火效率。还提供一种采用该退火装置的退火工艺。

Description

退火装置和退火工艺 技术领域
本发明实施例涉及一种退火装置和退火工艺。 背景技术
平板显示技术让人们的生活丰富多彩， 随着人们生活水平的提高， 人们 对显示质量的要求也越来越高。 液晶显示器（LCD )技术已经非常成熟， 其 产品包括手机、 相机、 显示器、 平板电脑、 电视、 户外显示等。 人们对显示 产品的大量需求， 客观上推动了显示技术的发展， 新的显示技术层出不穷。 传统液晶显示器的薄膜晶体管（Thin Film Transistor, TFT )的有源层采用非 晶硅（a-Si )材料， 由于非晶硅本身存在一定问题， 如缺陷太多而导致开态 电流低、 迁移率低、 稳定性差， 从而限制了非晶硅在很多领域的应用。 为改 善薄膜晶体管的性能， 提高显示装置的显示效果， 低温多晶硅 （Low Temperature Poly-Silicon, LTPS ) 、 氧化物半导体等技术应运而生。 低温多 晶硅 TFT和氧化物半导体 TFT相比传统的非晶硅（ a-Si ) TFT具有更多优势 而被普遍关注， 被认为是未来最理想的 LCD与有机电致发光显示 （ OLED ) 的背板。 退火工艺在低温多晶硅 TFT和氧化物半导体 TFT制备工艺中相当 重要， 直接影响到 TFT特性。
传统退火装置一般功能单一， 退火时间较长； 传统退火装置采用电热丝 加热， 或卤素灯加热， 对基板损伤比较大。 发明内容
本发明的实施例提供了一种退火装置和退火工艺， 可减少退火时间， 提 高效率。
本发明的一个方面提供了一种退火装置， 包括： 温度梯度预热单元， 用 于采用梯度温度对待退火的基板进行梯度预热； 高温加热单元， 用于对经过 预热的基板进行高温加热； 移动装置， 用于在基板经过梯度预热时和 /或预热 后， 将基板从所述温度梯度预热单元运送至所述高温加热单元。 例如， 在所述退火装置中， 所述移动装置可以包括： 导轨； 用于承载待 退火处理的基板的承载台， 该承载台可移动的设置在所述导轨上。
例如，在所述退火装置中，所述温度梯度预热单元包括多个第一频闪灯， 沿所述基板的移动方向排列设置， 且沿基板的移动方向所述第一频闪灯的功 率依次增大， 用于随着基板的移动， 实现对基板的梯度预热。
例如， 在所述退火装置中， 所述多个第一频闪灯均勾分布在所述温度梯 度预热单元内。
例如， 在所述退火装置中， 所述高温加热单元包括多个第二频闪灯， 沿 所述基板的移动方向排列设置。
例如， 在所述退火装置中， 所述多个第二频闪灯均勾分布在所述高温加 热单元内。
例如， 在所述退火装置中， 所述第一频闪灯和所述第二频闪灯的结构相 同， 所述第一频闪灯包括用于容纳惰性气体的石英管、 设置在所述石英管两 端用于连通外部电压的阴极和阳极。 例如， 所述惰性气体为氙气。
例如， 在所述退火装置中， 所述高温加热单元设置有用于产生变化的磁 场的电磁场发生器。
例如， 在所述退火装置中， 所述温度梯度预热单元和所述高温加热单元 之间设有用于对基板进行等离子体处理的等离子体诱导单元， 所述等离子体 诱导单元内设有等离子体发生器。
本发明的另一个方面还提供一种通过上述退火装置实现的退火工艺， 包 括： 通过温度梯度预热单元采用梯度温度对待退火的基板进行梯度预热； 通 过高温加热单元对经过预热的基板进行高温加热； 其中， 在基板经过梯度预 热时和 /或预热后， 将基板从所述温度梯度预热单元运送至所述高温加热单 元。
例如， 所述方法在对经过预热的基板进行高温加热之前还可以包括： 通 过等离子体诱导单元对基板进行等离子体处理。
例如， 对经过预热的基板进行高温加热可以包括： 通过电磁场发生器对 基板施加变化的磁场， 加t^板内的离子的运动。
本发明的实施例采用梯度加热的方式对基板进行预热处理， 提高了退火 效率。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1表示本发明实施例中退火装置的结构示意图；
图 2表示本发明实施例中频闪灯的结构示意图；
图 3表示本发明实施例中高温加热单元的结构示意图；
图 4表示本发明实施例中退火工艺的流程图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
如图 1、 图 3所示， 本发明的一个实施例提供一种退火装置， 该退火装 置包括： 温度梯度预热单元 100, 用于采用梯度温度对待退火的基板 600进 行梯度预热； 高温加热单元 300, 用于对经过预热的基板 600进行高温加热； 移动装置， 用于在基板 600经过梯度预热时和 /或预热后， 将基板 600从所述 温度梯度预热单元 100运送至所述高温加热单元 300。 该实施例的退火装置 采用梯度加热的方式， 对基板 600进行预热处理， 提高了退火效率。
所述移动装置包括导轨 400和用于承载待退火处理的基板 600的承载台 500, 该承载台 500可移动的设置在所述导轨 400上。
所述温度梯度预热单元 100包括多个第一频闪灯 700, 沿所述基板 600 的移动方向排列设置， 且沿基板 600的移动方向所述第一频闪灯 700的功率 依次增大， 实现对基板 600的梯度预热。
根据实际需要， 每一个第一频闪灯 700的功率是可以根据需要设定， 只 要能实现对基板 600加热的温度梯度就可以， 提高了退火效率。
本实施例中所述退火装置包括一容纳空间， 所述温度梯度预热单元 100 和所述高温加热单元 300分设于所述容纳空间的不同部分。 本实施例中， 温 度梯度预热单元 100、 高温加热单元 300可位于所述导轨 400上方， 且沿着 所述^ ^载台 500运动方向依次设置。
为了方便控制每一个第一频闪灯 700对基板 600加热的温度沿着基板 600移动的方向可以是依次增高的呈梯度的形式， 即控制第一频闪灯 700的 功率， 所述多个第一频闪灯 700均勾分布在所述温度梯度预热单元 100内。 且在工作中， 所述多个第一频闪灯 700可以与所述导轨 400的距离相同。
多个所述第一频闪灯 700的设置方式并不限于所述多个第一频闪灯 700 与所述导轨 400的距离相同的方式， 在本发明另一实施例的退火装置中， 多 个所述第一频闪灯 700的功率相同， 通过多个所述第一频闪灯 700与所述导 轨 400的距离不相同的设置方式来实现基板 600加热的温度梯度。
所述高温加热单元 300内、 在与所述导轨 400平行的方向上设置有多个 第二频闪灯 701。
为了方便控制每一个第二频闪灯 701对基板 600加热的温度， 即控制第 二频闪灯 701的功率， 所述多个第二频闪灯 701可均勾分布在所述高温加热 单元 300内。 且在工作中， 所述多个第二频闪灯 701可以与所述导轨 400的 巨离相同。
所述第二频闪灯 701的功率可以大于、 等于或小于多个所述第一频闪灯 700中功率最大的第一频闪灯 700的功率， 多个第二频闪灯 701的功率可以 相同也可以不相同， ^据实际退火需要决定。
所述高温加热单元 300设置有用于产生变化的磁场的电磁场发生器 800, 该电磁场发生器 800可以设置在所述导轨 400的上方。 在电磁场的作用下， 基板 600中离子运动可被加快， 提高退火效率。
本实施例中，所述电磁场发生器 800设置在所述第二频闪灯 701的上方。 所述温度梯度预热单元 100和所述高温加热单元 300之间设有用于对基 板 600进行等离子体处理的等离子体诱导单元 200, 所述等离子体诱导单元 200内设有等离子体发生器 201。
等离子体诱导单元 200的设置增加了退火装置的功能， 例如， 在对基板 600进行氢化处理时， 等离子体发生器产生富氢等离子体， 对基板表面进行 处理， 加速基板中的离子扩散， 有利于提高氢化效率； 产生的等离子体也可 以根据需要用于对基板 600表面进行刻蚀， 实现基板 600的平滑处理， 使得 基板 600的表面形成一个光滑的平面。
如图 2所示， 所述第一频闪灯 700和所述第二频闪灯 701的结构可以彼 此相同， 所述第一频闪灯 700包括用于容纳惰性气体的石英管 702、 设置在 所述石英管 702两端用于连通外部电压的阴极 703和阳极 704。
本实施例中， 惰性气体可为氙气。 采用氙气的第一频闪灯 700和第二频 闪灯 701的脉沖时间 （ 50-100 μ δ ) 比卤素灯的脉沖时间 （ ms量级）更短； 脉沖持续时间更短， 所以对基板损伤更小。
以下 LTPS (低温多晶硅）为例对本发明退火装置进行介绍， LTPS对退 火的依赖性更为强烈， LTPS 制程与传统非晶硅制程最大区别在于， 热处理 工序比较多， 一般包括去氢（脱氢） 、 离子活化、 氢扩散（氢化）等。 退火 时间和温度的精确控制对 LTPS TFT性能影响明显，所以，退火设备对 LTPS 工艺非常重要。制备 LTPS的过程中进行退火以进行结晶的时间通常低于 600 摄氏度。
在进行脱氢（去除非晶硅薄膜中的氢）处理的实施例中， 基板 600首先 进入温度梯度预热单元 100, 温度梯度预热单元 100采用温度梯度设计， 交 互改变多个第一频闪灯 700的功率， 使得加热基板 600的温度存在梯度， 这 样可以大大提高去除氢的效率； 基板 600接着进入等离子体诱导单元 200; 基板 600最后进入包括电磁场发生器 800的高温加热单元 300, 第二频闪灯 701对基板 600进行高温加热， 并在电磁场的辅助作用下， 氢离子更快逸出， 可提高脱氢效率。 这里， 在操作中， 等离子体诱导单元 200可作为备选项， 根据需要设置其开 /关状态； 而且， 电磁场发生器 800产生的电磁场在高温加 热单元 300内起到辅助退火处理的作用， 也可以 ^据实际需要控制其开关状 态。
在对基板 600进行氢化（增加氢键含量）处理的实施例中： 基板 600首 先进入温度梯度预热单元 100, 温度梯度预热单元 100采用温度梯度设计， 交互改变第一频闪灯 700的功率， 使得加热的温度存在梯度， 这样可以大大 提高离子移动的活性； 基板 600接着进入等离子体诱导单元 200, 可采用富 氢等离子体， 对基板 600表面处理， 有利于提高氢化效率； 基板 600最后进 入包括电磁场发生器 800的高温加热单元 300, 第二频闪灯 701对基板 600 进行高温加热， 并在变化的电磁场作用下，有利于氢离子移动， 进入目标层， 提高氢化效率。
在对基板 600进行活化（注入离子活性化、 晶格修复）处理的实施例中： 基板 600首先进入温度梯度预热单元 100, 温度梯度预热单元 100采用温度 梯度设计， 交互改变第一频闪灯 700的功率， 使得加热基板 600的温度存在 梯度， 这样可以大大提高离子移动的活性； 基板 600接着进入等离子体诱导 单元 200;基板 600最后进入包括电磁场发生器 800的高温加热单元 300,第 二频闪灯 701对基板 600进行高温加热， 并在变化的电磁场作用下， 有利于 离子移动， 提高活化效率。 这里， 等离子体诱导单元 200可作为备选项， 根 据需要设置开 /关状态。
如图 4所示， 本发明的实施例还提供一种通过上述退火装置实现的退火 工艺， 可如下进行。
通过温度梯度预热单元采用梯度温度对待退火的基板进行梯度预热； 通 过高温加热单元对经过预热的基板进行高温加热。 并且， 在基板经过梯度预 热时和 /或预热后， 将基板从所述温度梯度预热单元运送至所述高温加热单 元。
例如， 在对经过预热的基板进行高温加热之前还可以包括： 通过等离子 体诱导单元对基板进行等离子体处理。
对经过预热的基板进行高温加热的一个示例包括： 通过电磁场发生器对 基板施加变化的磁场， 加t^板内的离子的运动。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1.一种退火装置， 包括：
温度梯度预热单元， 用于采用梯度温度对待退火的基板进行梯度预热； 高温加热单元， 用于对经过预热的基板进行高温加热；
移动装置， 用于在基板经过梯度预热时和 /或预热后， 将基板从所述温度 梯度预热单元运送至所述高温加热单元。
2.根据权利要求 1所述的退火装置， 其中， 所述移动装置包括： 导轨；
用于承载待退火处理的基板的承载台， 该承载台可移动的设置在所述导 轨上。
3.根据权利要求 1或 2所述的退火装置， 其中， 所述温度梯度预热单元 包括多个第一频闪灯， 沿所述基板的移动方向排列设置， 且沿基板的移动方 向所述第一频闪灯的功率依次增大， 实现对基板的梯度预热。
4.根据权利要求 3所述的退火装置， 其中， 所述多个第一频闪灯均匀分 布在所述温度梯度预热单元内。
5.根据权利要求 3或 4所述的退火装置， 其中， 所述高温加热单元包括 多个第二频闪灯， 沿所述基板的移动方向排列设置。
6.根据权利要求 5所述的退火装置， 其中， 所述多个第二频闪灯均匀分 布在所述高温加热单元内。
7.根据权利要求 6所述的退火装置， 其中， 所述第一频闪灯和所述第二 频闪灯的结构相同， 所述第一频闪灯包括用于容纳惰性气体的石英管、 设置 在所述石英管两端用于连通外部电压的阴极和阳极。
8.根据权利要求 7所述的退火装置， 其中， 所述惰性气体为氙气。
9.根据权利要求 1-8任一所述的退火装置， 其中， 所述高温加热单元设 置有用于产生变化的磁场的电磁场发生器。
10.根据权利要求 1-9任一所述的退火装置， 其中， 所述温度梯度预热 单元和所述高温加热单元之间设置有用于对基板进行等离子体处理的等离子 体诱导单元， 所述等离子体诱导单元内设有等离子体发生器。
11. 一种通过权利要求 1-10任一项权利要求所述的退火装置实现的退火 工艺， 包括如下步骤：
通过温度梯度预热单元采用梯度温度对待退火的基板进行梯度预热； 通过高温加热单元对经过预热的基板进行高温加热；
其中， 在基板经过梯度预热时和 /或预热后， 将基板从所述温度梯度预热 单元运送至所述高温加热单元。
12.根据权利要求 11所述的退火工艺，在对经过预热的基板进行高温加 热之前还包括如下步骤：
通过等离子体诱导单元对基板进行等离子体处理。
13.根据权利要求 11所述的退火工艺， 其中， 对经过预热的基板进行高 温加热包括：
通过电磁场发生器对基板施加变化的磁场， 加t^板内的离子的运动。
PCT/CN2013/086975 2013-05-29 2013-11-12 退火装置和退火工艺 Ceased WO2014190675A1 (zh)

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