WO2014185771A2 - A capacitive humidity sensor - Google Patents
A capacitive humidity sensor Download PDFInfo
- Publication number
- WO2014185771A2 WO2014185771A2 PCT/MY2014/000093 MY2014000093W WO2014185771A2 WO 2014185771 A2 WO2014185771 A2 WO 2014185771A2 MY 2014000093 W MY2014000093 W MY 2014000093W WO 2014185771 A2 WO2014185771 A2 WO 2014185771A2
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- humidity sensor
- capacitive humidity
- ground plane
- layer
- semiconductor substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
Definitions
- the present invention relates to a humidity sensor and its method of fabricating and its method for preparing.
- a humidity sensor also called ahygrometer, measures and regularly reports
- Humidity sensors can also be used in cars, office and industrialHVAC systems, and in meteorology stations to report and predict weather.
- a humidity sensor senses relative humidity. This means that it measures both air temperature and moisture. Relative humidity, expressed as a percent, is the ratio of actual moisture in the air to the highest amount of moisture air at that temperature can hold. The warmer the air is, the more moisture it can hold, so relative humidity changes with fluctuations in temperature.
- the most common type of humidity sensor uses what is called 'capacitive measurement.' This system relies on electrical capacitance, or the ability of two nearby electrical conductors to create an electrical field between them.
- the sensor itself is composed of two metal plates with a non-conductive polymer film between them. The film collects moisture from the air, and the moisture causes minute changes in the voltage between the two plates. The changes in voltage are converted into digital readings showing the amount of moisture in the air.
- interdigitated capacitive humidity sensors comprises sensing membranes only on the top side of the electrodes, like in WO2012067488, which relates to a sensor for determining humidity.
- a humidity sensor comprises of a substrate; a bottom membrane positioned above the substrate and a top membrane positioned abovethe bottom membrane forming a dielectric layer; and a plurality of inter-digitated electrodes with changing capacitance in accordance to change in humidity detected by the dielectric layer embedded to the top membrane wherein a plurality of trenches areembedded to the bottom membrane or to the substrate thereby increasing area of exposure to humidity.
- the prior art also relates to a method for fabricating a humidi- tysensor.
- the present invention provides aca- pacitive humidity sensor ( 100) comprising:a semiconductor substrate ( 101 ); an insulating layer (103) rests on the semiconductor substrate ( 101 ); a sensing membrane ( 105); a plurality of interdigitated electrodes ( 107); and a plurality of electrode contacts (109); characterised in that the interdigitated electrodes ( 107) are sandwiched by the sensing membrane (105) to provide optimal utilisation of fringing field effect.
- the above provision is advantageous as it increases the performance of the sensor.
- the present invention provides acapacitive humidity sensor (100) comprising: a semiconductor substrate (101 ); an insulating layer (103) rests on the semiconductor substrate (101 ); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the capacitive humidity sensor (100) further comprising ground plane connections (1 1 1) to eliminate stray capacitance.
- acapacitive humidity sensor comprising: a semiconductor substrate (101 ); an insulating layer (103) rests on the semiconductor substrate (101 ); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the capacitive humidity sensor (100) further comprising ground plane connections (1 1 1) to eliminate stray capacitance.
- FIG. 13 Figure lillustrates one embodiment of acapacitive humidity sensor device of the present invention.
- Figure 2 illustrates the present inventionwith (a) grounding pads only; and (b) with shielding wire surrounding the interdigitated electrodes.
- Figure 3 illustrates a flowchart of a method for preparing the present invention.
- FIG. 16 Figure illustrates sequential diagrams of preparing the present invention.
- Figure 5 illustratesa method of packaging a capacitive humidity sensor on a printed circuit board (PCB) of the present invention.
- the present invention relates to acapacitive humidity sensor (100)
- the capacitive humidity sensor ( 100) further comprising ground plane connections ( 1 1 1 ) to maximally reduce stray capacitance.
- the present invention havingthe interdigitated electrodes ( 107) are sandwiched between two sensing membranes, typically of polyimide material.
- the present invention also having the electrodes contacts (109) connected to a ground plane (1 1 1a) formed on the underlying doped semiconductor substrate ( 101 ) with an aim to eliminate stray capacitances.
- the ground plane connections ( 1 1 1 ) are formed on the same side as the interdigitated electrodes ( 107) and its electrode contacts ( 109). This eases electrical connection by wire bonding during device packaging where back ground contact is not required.
- connection to the ground plane ( 1 1 1 a) can be of only electrical ground contact pads ( Figure 2a) or with a shielding wire ( 1 13) surrounding the interdigitated electrodes ( 107) ( Figure 2b).
- the shielding wire ( 1 13) helps to isolate the present invention from stray capacitance and electrical noise from the other devices. This is important when an array of sensors is deployed for a certain monitoring application.
- the present invention operates based on fringing electric field effects (FEF) with an output of electrical capacitance.
- FEF fringing electric field effects
- With interdigitated based devices there is fringing field on both side of the electrode, hence by having sensing membranes ( 105) on both sides of the interdigitated structures, allows full utilisation of the fringing field of the capacitor device. Hence the sensitivity and performance of the device would be significantly improved.
- the sensing membranes (105) would absorb moisture from the air, changing both their material dielectric permittivity resulting in a change in the overall device capacitance. Dielectric permittivity of both the membrane would increase with increasing moisture/humidity level and vice versa for decreasing moisture/permittivity.
- a method for preparing a capacitive humidity sensor comprising: doping of silicon substrate n- or p- type dopants to form the silicon ground plane layer (201); depositing and patterning an insulating layer comprising silicon oxide or silicon nitride on top of the silicon substrate surface (203); depositing and patterning a first membrane layer on top of the insulating layer (205); and depositing and etching a conductive layer on top of the bottom sensing membrane (207); characterized in that depositing and patterning a second membrane layer on top of the interdigitated electrodes (209).
- the method starts with doping of silicon substrate (101 ) to form the ground plane layer ( Figure 4a).
- Silicon can be doped with n- or p- type materials by thermal diffusion or ion implantation.
- Then is followed by depositing and patterning an insulating layer ( 103) on the silicon substrate surface to act as an electrical isolation layer between the conductive electrodes and the substrate (101 ) ( Figure 4b).
- the insulating layer ( 103) can be of silicon oxide or silicon nitride and is patterned to allow electrical connection to the ground plane. It continues with forming the bottom polyimide sensing membrane ( 105) by depositing and patterning a first polyimide layer on top of the insulating layer (103) ( Figure 4c).
- the sensing membrane (105) is used to capture the fringing electric field beneath the interdigitated electrodes and is patterned to expose ground plane connections.
- Next step is forming the interdigitated capacitive electrodes ( 107) and connections to the silicon ground plane ( 1 1 la) by depositing and etching a conductive layer on top of the bottom sensing membrane ( Figure 4d).
- the conduction layer is of material not limited to aluminium, tungsten, gold or platinum.
- the steps are ended with the step of forming the top polyimide sensing membrane (105) by depositing and patterning a second polyimide layer on top of the conductive electrodes ( Figure 4e).
- the polyimide membrane is used to capture the fringing electric field on top of the interdigitated electrodes (107) and is patterned to expose ground plane connections ( 1 1 1 ) and contact pads to the interdigitated electrodes ( 107).
- a method of packaging a capacitive humidity sensor on a printed circuit board comprising:dicing a semiconductor substrate which contains the capacitive humidity sensors into dies (301 );attaching the capacitive humidity sensor dies to the die pad area predefined on the said PCB (303);wire bonding the contact pads of the capacitive humidity sensor to metal leads prefabricated on the said PCB (305); and encapsulating the wire bonds with a protective epoxy (307).
- a protective epoxy (307).
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Abstract
The present invention relates to a capacitive humidity sensor (100) comprising: a semiconductor substrate (101); an insulating layer (103) rests on the semiconductor substrate (101); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the present invention having ground plane connections (111) and the interdigitated electrodes (107) are sandwiched by the sensing membrane (105). The ground plane connections (111) and the sandwiching sensing membrane (105) are configured to eliminate stray capacitance and to provide optimal utilisation of fringing field effectrespectively.
Description
Description
Title of Invention: A CAPACITIVE HUMIDITY SENSOR
[ 1 ] FIELD OF INVENTION
[2] The present invention relates to a humidity sensor and its method of fabricating and its method for preparing.
[3] BACKGROUND OF THE INVENTION
[4] A humidity sensor, also called ahygrometer, measures and regularly reports
therelative humidityin the air. They may be used in homes for people with illnesses affected by humidity; as part of home heating, ventilating, and air conditioning (HVAC) systems; and in humidors or wine cellars. Humidity sensors can also be used in cars, office and industrialHVAC systems, and in meteorology stations to report and predict weather. A humidity sensor senses relative humidity. This means that it measures both air temperature and moisture. Relative humidity, expressed as a percent, is the ratio of actual moisture in the air to the highest amount of moisture air at that temperature can hold. The warmer the air is, the more moisture it can hold, so relative humidity changes with fluctuations in temperature.
[5] The most common type of humidity sensor uses what is called 'capacitive measurement.' This system relies on electrical capacitance, or the ability of two nearby electrical conductors to create an electrical field between them. The sensor itself is composed of two metal plates with a non-conductive polymer film between them. The film collects moisture from the air, and the moisture causes minute changes in the voltage between the two plates. The changes in voltage are converted into digital readings showing the amount of moisture in the air.
[6] At present, interdigitated capacitive humidity sensors comprises sensing membranes only on the top side of the electrodes, like in WO2012067488, which relates to a sensor for determining humidity. A humidity sensor comprises of a substrate; a bottom membrane positioned above the substrate and a top membrane positioned abovethe bottom membrane forming a dielectric layer; and a plurality of inter-digitated electrodes with changing capacitance in accordance to change in humidity detected by the dielectric layer embedded to the top membrane wherein a plurality of trenches areembedded to the bottom membrane or to the substrate thereby increasing area of exposure to humidity. The prior art also relates to a method for fabricating a humidi- tysensor.
[7] However, having a sensing membrane on top of the interdigitated electrode only utilises 50% of fringing field effect. To fully utilise the device, the fringing beneath the interdigitated fingers needs to be utilised as well. Another drawback is that, the current devices are not properly grounded, hence susceptible to influence of stray capacitance
and electrical noise. In addition, the condensed gas around the sensor, especially at higher relative humidity, causes the sensor become saturated and respond wrongly.
[8] Therefore it is a need for an invention that can tackle those drawbacks.
[9] SUMMARY OF THE INVENTION
[ 10] According to an aspect of the present invention, the present invention providesaca- pacitive humidity sensor ( 100) comprising:a semiconductor substrate ( 101 ); an insulating layer (103) rests on the semiconductor substrate ( 101 ); a sensing membrane ( 105); a plurality of interdigitated electrodes ( 107); and a plurality of electrode contacts (109); characterised in that the interdigitated electrodes ( 107) are sandwiched by the sensing membrane (105) to provide optimal utilisation of fringing field effect. The above provision is advantageous as it increases the performance of the sensor.
[1 1 ] According to another aspect of the present invention, the present invention provides acapacitive humidity sensor (100) comprising: a semiconductor substrate (101 ); an insulating layer (103) rests on the semiconductor substrate (101 ); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the capacitive humidity sensor (100) further comprising ground plane connections (1 1 1) to eliminate stray capacitance. The above provision is advantageous as it provides more quality result or reading.
[ 12] BRIEF DESCRIPTION OF THE DRAWINGS
[13] Figure lillustrates one embodiment of acapacitive humidity sensor device of the present invention.
[14] Figure 2illustrates the present inventionwith (a) grounding pads only; and (b) with shielding wire surrounding the interdigitated electrodes.
[15] Figure 3illustrates a flowchart of a method for preparing the present invention.
[ 16] Figure illustrates sequential diagrams of preparing the present invention.
[ 17] Figure 5illustratesa method of packaging a capacitive humidity sensor on a printed circuit board (PCB) of the present invention.
[18] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[ 19] Generally, the present invention relates to acapacitive humidity sensor (100)
comprising:a semiconductor substrate ( 101); an insulating layer (103) rests on the semiconductor substrate (101); a sensing membrane (105); a plurality of interdigitated electrodes ( 107); and a plurality of electrode contacts ( 109); characterised in that the interdigitated electrodes ( 107) are sandwiched by the sensing membrane ( 105) to provide optimal utilisation of fringing field effect.The capacitive humidity sensor ( 100) further comprising ground plane connections ( 1 1 1 ) to maximally reduce stray capacitance.
[20] Referring to Figure 1, the present invention havingthe interdigitated electrodes ( 107) are sandwiched between two sensing membranes, typically of polyimide material. The
present invention also having the electrodes contacts (109) connected to a ground plane (1 1 1a) formed on the underlying doped semiconductor substrate ( 101 ) with an aim to eliminate stray capacitances. The ground plane connections ( 1 1 1 ) are formed on the same side as the interdigitated electrodes ( 107) and its electrode contacts ( 109). This eases electrical connection by wire bonding during device packaging where back ground contact is not required. As shown in Figure 2, the connection to the ground plane ( 1 1 1 a) can be of only electrical ground contact pads (Figure 2a) or with a shielding wire ( 1 13) surrounding the interdigitated electrodes ( 107) (Figure 2b). When there is an array of devices, the shielding wire ( 1 13) helps to isolate the present invention from stray capacitance and electrical noise from the other devices. This is important when an array of sensors is deployed for a certain monitoring application.
[21 ] The present invention operates based on fringing electric field effects (FEF) with an output of electrical capacitance. With interdigitated based devices, there is fringing field on both side of the electrode, hence by having sensing membranes ( 105) on both sides of the interdigitated structures, allows full utilisation of the fringing field of the capacitor device. Hence the sensitivity and performance of the device would be significantly improved.During sensing operation, the sensing membranes (105) would absorb moisture from the air, changing both their material dielectric permittivity resulting in a change in the overall device capacitance. Dielectric permittivity of both the membrane would increase with increasing moisture/humidity level and vice versa for decreasing moisture/permittivity.
[22] Generally, a method for preparing a capacitive humidity sensor comprising: doping of silicon substrate n- or p- type dopants to form the silicon ground plane layer (201); depositing and patterning an insulating layer comprising silicon oxide or silicon nitride on top of the silicon substrate surface (203); depositing and patterning a first membrane layer on top of the insulating layer (205); and depositing and etching a conductive layer on top of the bottom sensing membrane (207); characterized in that depositing and patterning a second membrane layer on top of the interdigitated electrodes (209).
[23] A detailed fabrication process flow for forming the present invention is illustrated in Figure 3 and Figure 4 and described below.
[24] Firstly, the method starts with doping of silicon substrate (101 ) to form the ground plane layer (Figure 4a). Silicon can be doped with n- or p- type materials by thermal diffusion or ion implantation. Then is followed by depositing and patterning an insulating layer ( 103) on the silicon substrate surface to act as an electrical isolation layer between the conductive electrodes and the substrate (101 ) (Figure 4b). The insulating layer ( 103) can be of silicon oxide or silicon nitride and is patterned to allow electrical connection to the ground plane. It continues with forming the bottom polyimide
sensing membrane ( 105) by depositing and patterning a first polyimide layer on top of the insulating layer (103) (Figure 4c). The sensing membrane (105) is used to capture the fringing electric field beneath the interdigitated electrodes and is patterned to expose ground plane connections. Next step is forming the interdigitated capacitive electrodes ( 107) and connections to the silicon ground plane ( 1 1 la) by depositing and etching a conductive layer on top of the bottom sensing membrane (Figure 4d). The conduction layer is of material not limited to aluminium, tungsten, gold or platinum. The steps are ended with the step of forming the top polyimide sensing membrane (105) by depositing and patterning a second polyimide layer on top of the conductive electrodes (Figure 4e). The polyimide membrane is used to capture the fringing electric field on top of the interdigitated electrodes (107) and is patterned to expose ground plane connections ( 1 1 1 ) and contact pads to the interdigitated electrodes ( 107).
[25] As illustrated in Figure 5, a method of packaging a capacitive humidity sensor on a printed circuit board (PCB) comprising:dicing a semiconductor substrate which contains the capacitive humidity sensors into dies (301 );attaching the capacitive humidity sensor dies to the die pad area predefined on the said PCB (303);wire bonding the contact pads of the capacitive humidity sensor to metal leads prefabricated on the said PCB (305); and encapsulating the wire bonds with a protective epoxy (307).Thesemiconductor substrate is back-grinded to become thinner beforethedicing process andthe edges of the die are filled with a protective epoxy. A thin filter with plurality of holes covers the said sensor.
[26] Although the invention has been described with reference to particular embodiment, it is to be understood that the embodiment is merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiment that other arrangements may be devised without departing from the scope of the present invention as defined by the appended claims.
Claims
[Claim 1 ] A capacitive humidity sensor ( 100) comprising:
a semiconductor substrate ( 101 );
an insulating layer (103) rests on the semiconductor substrate ( 101 ); a sensing membrane ( 105);
a plurality of interdigitated electrodes ( 107); and a plurality of electrode contacts ( 109);
characterised in that
the interdigitated electrodes ( 107) are sandwiched by the sensing membrane ( 105) to provide optimal utilisation of fringing field effect.
[Claim 2] A capacitive humidity sensor ( 100) as claimed in Claim 1 , wherein the capacitive humidity sensor ( 100) further comprising ground plane connections (1 1 1 ) to maximally reduce stray capacitance.
[Claim 3] A capacitive humidity sensor (100) as claimed in Claim 2, wherein the ground plane connections (1 1 1 ) further comprising: a ground plane (1 1 1a) rests on the semiconductor substrate ( 101).
[Claim 4] A capacitive humidity sensor (100) as claimed in Claim 1 , wherein a shielding wire (1 13) surrounds the interdigitated electrodes (107).
[Claim 5] A capacitive humidity sensor (100) as claimed in Claim 1, whereinthe sensing membrane (105) is selected from a group of ferroelectric and piezoelectric materials.
[Claim 6] A capacitive humidity sensor (100) as claimed in Claim 1 , wherein the material of the interdigitated electrodes (107)are of aluminium, tungsten, gold or platinum.
[Claim 7] A capacitive humidity sensor ( 100) as claimed inClaim 1, wherein the material of the insulating layer (103) is of silicon oxide or silicon nitride.
[Claim 8] A method for preparing a capacitive humidity sensor comprising:
doping of silicon substrate n- or p- type dopants to form the silicon ground plane layer (201 );
depositing and patterning an insulating layer comprising silicon oxide or silicon nitride on top of the silicon substrate surface (203);
depositing and patterning a first membrane layer on top of the insulating layer (205); and
depositing and etching a conductive layer on top of the bottom sensing membrane (207);
characterized in that
depositing and patterning a second membrane layer on top of the inter- digitated electrodes (209).
[Claim 9] A method for preparing a capacitive humidity sensor as claimed in
Claim 8, wherein the step of doping (201 )to form the ground plane layer is conducted by thermal diffusion or ion implantation.
[Claim 10] A method of packaging a capacitive humidity sensor on a printed
circuit board (PCB) comprising:
dicing a semiconductor substrate ( 101) which contains the capacitive humidity sensors into dies (301 );
attaching the capacitive humidity sensor dies to the die pad area predefined on the said PCB (303);
wire bonding the contact pads of the capacitive humidity sensor to metal leads prefabricated on the said PCB (305); and
encapsulating the wire bonds with a protective epoxy (307).
[Claim 1 1 ] A method of packaging a capacitive humidity sensor as claimed in
Claim 10, wherein thesemiconductor substrate is back-grinded to become thinner before dicing process.
[Claim 12] A method of packaging a capacitive humidity sensor as claimed in
Claim 10, wherein the edges of the die are filled with a protective epoxy.
[Claim 13] A method of packaging a capacitive humidity sensor as claimed in
Claim 10, whereina thin filter with plurality of holes covers the said sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI2013001818 | 2013-05-17 | ||
| MYPI2013001818 | 2013-05-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2014185771A2 true WO2014185771A2 (en) | 2014-11-20 |
| WO2014185771A3 WO2014185771A3 (en) | 2015-04-30 |
Family
ID=51300797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/MY2014/000093 Ceased WO2014185771A2 (en) | 2013-05-17 | 2014-05-02 | A capacitive humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2014185771A2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN108287185A (en) * | 2018-01-09 | 2018-07-17 | 南京信息工程大学 | A kind of sounding humidity sensor, preparation method, sounding humidity measurement system and measurement method |
| WO2018153532A1 (en) * | 2017-02-21 | 2018-08-30 | E+E Elektronik Ges.M.B.H | Humidity sensor arrangement |
| CN109781799A (en) * | 2018-12-29 | 2019-05-21 | 西安交通大学 | A kind of capacitive fibroin humidity sensor and preparation method thereof |
| CN109911839A (en) * | 2017-12-12 | 2019-06-21 | 中国科学院半导体研究所 | Microelectrode capable of suppressing optical noise, circuit using the same, and preparation method thereof |
| US20210109053A1 (en) * | 2018-07-04 | 2021-04-15 | Murata Manufacturing Co., Ltd. | Humidity sensor and rfid tag including the same |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012067488A1 (en) | 2010-11-15 | 2012-05-24 | Mimos Berhad | Humidity sensor and a method for fabricating the same |
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| US7461560B2 (en) * | 2005-03-28 | 2008-12-09 | Microstrain, Inc. | Strain gauge with moisture barrier and self-testing circuit |
| EP1686026A1 (en) * | 2005-01-31 | 2006-08-02 | IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. | Differential capacitive rain sensor |
| MY164505A (en) * | 2007-11-23 | 2017-12-29 | Mimos Berhad | Capacitive sensor |
-
2014
- 2014-05-02 WO PCT/MY2014/000093 patent/WO2014185771A2/en not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012067488A1 (en) | 2010-11-15 | 2012-05-24 | Mimos Berhad | Humidity sensor and a method for fabricating the same |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN104634833B (en) * | 2015-02-28 | 2017-09-26 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitive relative humidity sensor and preparation method thereof |
| WO2018153532A1 (en) * | 2017-02-21 | 2018-08-30 | E+E Elektronik Ges.M.B.H | Humidity sensor arrangement |
| EP3364181B1 (en) * | 2017-02-21 | 2019-04-10 | E+E Elektronik Ges.M.B.H. | Moisture sensor assembly with esd-protection |
| CN109911839A (en) * | 2017-12-12 | 2019-06-21 | 中国科学院半导体研究所 | Microelectrode capable of suppressing optical noise, circuit using the same, and preparation method thereof |
| CN109911839B (en) * | 2017-12-12 | 2023-10-13 | 中国科学院半导体研究所 | Microelectrode capable of suppressing optical noise, circuit using same and preparation method thereof |
| CN108287185A (en) * | 2018-01-09 | 2018-07-17 | 南京信息工程大学 | A kind of sounding humidity sensor, preparation method, sounding humidity measurement system and measurement method |
| CN108287185B (en) * | 2018-01-09 | 2024-01-12 | 南京信息工程大学 | Sounding humidity sensor, preparation method, sounding humidity measurement system and measurement method |
| US20210109053A1 (en) * | 2018-07-04 | 2021-04-15 | Murata Manufacturing Co., Ltd. | Humidity sensor and rfid tag including the same |
| US11913896B2 (en) * | 2018-07-04 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Humidity sensor and RFID tag including the same |
| CN109781799A (en) * | 2018-12-29 | 2019-05-21 | 西安交通大学 | A kind of capacitive fibroin humidity sensor and preparation method thereof |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014185771A3 (en) | 2015-04-30 |
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