WO2014136573A1 - Composite substrate, semiconductor-wafer production method using said composite substrate, and support substrate for said composite substrate - Google Patents

Composite substrate, semiconductor-wafer production method using said composite substrate, and support substrate for said composite substrate Download PDF

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WO2014136573A1
WO2014136573A1 PCT/JP2014/053864 JP2014053864W WO2014136573A1 WO 2014136573 A1 WO2014136573 A1 WO 2014136573A1 JP 2014053864 W JP2014053864 W JP 2014053864W WO 2014136573 A1 WO2014136573 A1 WO 2014136573A1
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substrate
composite
film
support substrate
chemical composition
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一成 佐藤
裕紀 関
喜之 山本
松原　秀樹
浩一 曽我部
長谷川　幹人
裕 辻
明人 藤井
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住友電気工業株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Abstract

A composite substrate (1) includes: a support substrate (11) including a crystalline phase formed using anorthite which includes a metal (M), and which has the chemical composition MAl2Si2O8; and a main film (13) disposed on a main surface (11m) side of the support substrate (11). This production method for a semiconductor wafer (3) includes: a step in which the composite substrate (1) is prepared; a step in which at least one semiconductor layer (20) is grown on the main film (13) of the composite substrate (1) to obtain a semiconductor-layer-equipped composite substrate (2); and a step in which the support substrate (11) is removed from the semiconductor-layer-equipped composite substrate (2) to obtain a semiconductor wafer (3) including the semiconductor layer (20). Accordingly, provided are a composite substrate, a semiconductor-wafer production method using said composite substrate, and a support substrate for said composite substrate, which are suitable for producing a semiconductor wafer at low cost and with high efficiency.

Description

複合基板、複合基板を用いた半導体ウエハの製造方法、および複合基板用の支持基板Composite substrate, semiconductor wafer manufacturing method using composite substrate, and support substrate for composite substrate
　本発明は、半導体ウエハを低コストで効率よく製造するために好適な複合基板、複合基板を用いた半導体ウエハの製造方法、および複合基板用の支持基板に関する。 The present invention relates to a composite substrate suitable for efficiently manufacturing a semiconductor wafer at low cost, a method for manufacturing a semiconductor wafer using the composite substrate, and a support substrate for the composite substrate.
　発光デバイス、電子デバイスなどの半導体デバイスを製造するために、ＧａＮ、ＡｌＮ、ＧａＡｓ、ＩｎＰなどのＩＩＩ－Ｖ族化合物、ＳｉＣなどのＩＶ族化合物などの半導体で形成されている半導体基板が好適に用いられる。 In order to manufacture semiconductor devices such as light-emitting devices and electronic devices, semiconductor substrates made of semiconductors such as III-V compounds such as GaN, AlN, GaAs, and InP, and IV compounds such as SiC are preferably used. It is done.
　しかしながら、これらの半導体基板は高価なものが多いため、半導体デバイスを低コストで効率よく製造するために、近年、支持基板の主面側に上記の半導体の主膜が配置された複合基板が提案されている。 However, since many of these semiconductor substrates are expensive, in recent years, in order to efficiently manufacture semiconductor devices at a low cost, a composite substrate in which the main film of the above semiconductor is arranged on the main surface side of the support substrate has been proposed. Has been.
　たとえば、特開２０１２－１２１７８８号公報（特許文献１）は、支持基板として、ムライト、Ａｌ2Ｏ3、ＳｉＯ2などを含有するＡｌ2Ｏ3－ＳｉＯ2系焼結体基板上に、接合膜として接合層であるＳｉＯ2層を介在させて、主膜として単結晶膜であるＧａＮ膜が貼り合わされた複合基板を開示する。かかる複合基板は、支持基板としてＡｌ2Ｏ3－ＳｉＯ2系焼結体基板を用いていることから、Ａｌ2Ｏ3－ＳｉＯ2系焼結体基板中に存在するＳｉＯ2相がフッ化水素酸などの酸により除去されるため、複合基板の主膜上に半導体層を成長させて半導体層付複合基板を形成した後、支持基板を除去することにより所望の半導体ウエハを得ることができる。 For example, Japanese Patent Application Laid-Open No. 2012-121788 (Patent Document 1) discloses a bonding film on an Al 2 O 3 —SiO 2 sintered body substrate containing mullite, Al 2 O 3 , SiO 2 or the like as a supporting substrate. A composite substrate in which a GaN film as a single crystal film is bonded as a main film with a SiO 2 layer as a bonding layer interposed therebetween is disclosed. Since such a composite substrate uses an Al 2 O 3 —SiO 2 based sintered substrate as a support substrate, the SiO 2 phase present in the Al 2 O 3 —SiO 2 based sintered substrate is hydrogen fluoride. Since it is removed by an acid such as an acid, a desired semiconductor wafer can be obtained by growing a semiconductor layer on the main film of the composite substrate to form a composite substrate with a semiconductor layer and then removing the support substrate.
特開２０１２－１２１７８８号公報JP 2012-121788 A
　特開２０１２－１２１７８８号公報（特許文献１）に開示された複合基板においては、支持基板であるＡｌ2Ｏ3－ＳｉＯ2系焼結体基板中のＳｉＯ2相の存在形態および分布状態が安定していないため、支持基板を除去する工程を管理するのが困難という問題点があった。 In the composite substrate disclosed in Japanese Patent Application Laid-Open No. 2012-121788 (Patent Document 1), the presence form and distribution state of the SiO 2 phase in the Al 2 O 3 —SiO 2 based sintered body substrate as the support substrate are stable. Therefore, there is a problem that it is difficult to manage the process of removing the support substrate.
　本発明は、上記の問題点を解決して、安定した管理工程で複合基板から支持基板を除去することにより、半導体ウエハを低コストで効率よく製造するために好適な複合基板、複合基板を用いた半導体ウエハの製造方法、および複合基板用の支持基板を提供することを目的とする。 The present invention solves the above problems and uses a composite substrate and a composite substrate suitable for efficiently manufacturing a semiconductor wafer at low cost by removing the support substrate from the composite substrate in a stable management process. An object of the present invention is to provide a method for manufacturing a semiconductor wafer and a support substrate for a composite substrate.
　本発明は、ある局面に従えば、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む支持基板と、前記支持基板の主面側に配置されている主膜と、を含む複合基板である。 According to one aspect of the present invention, a support substrate including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including a metal element M is disposed on the main surface side of the support substrate. And a main film.
　本発明のかかる局面に従う複合基板において、金属元素Ｍをアルカリ土類金属元素ＭIIとすることができる。さらに、アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、支持基板の化学組成が、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点、ＭIIＡｌ12Ｏ19の化学組成を示す第２点、Ａｌ2Ｏ3の化学組成を示す第３点、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点、および第１点をこの順に直線で結んで形成される領域内の点で示すことができる。 In the composite board according to according aspects of the present invention, the metal element M may be an alkaline earth metal element M II. Further comprising at least one element the alkaline earth metal element M II is Ca, it is selected from the group consisting of Sr and Ba, the chemical composition of the support substrate, M II O-Al 2 O 3 3 of -SiO 2 system In the component phase diagram, the first point indicating the chemical composition of M II Al 2 Si 2 O 8 , the second point indicating the chemical composition of M II Al 12 O 19 , the third point indicating the chemical composition of Al 2 O 3 , And a fourth point indicating the chemical composition of Al 6 Si 2 O 13 and a point in a region formed by connecting the first point with a straight line in this order.
　また、本発明のかかる局面に従う複合基板において、支持基板の少なくとも一部を酸に溶解させることができる。また、支持基板の主面内の熱膨張係数を、主膜の主面内の熱膨張係数に比べて、０．８倍以上１．２倍以下とすることができる。 Moreover, in the composite substrate according to this aspect of the present invention, at least a part of the support substrate can be dissolved in the acid. In addition, the thermal expansion coefficient in the main surface of the support substrate can be 0.8 times or more and 1.2 times or less compared to the thermal expansion coefficient in the main surface of the main film.
　また、本発明は、別の局面に従えば、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む支持基板と、支持基板の主面側に配置されている主膜と、を含む複合基板を準備する工程と、複合基板の主膜上に、少なくとも１層の半導体層を成長させることにより、半導体層付複合基板を得る工程と、半導体層付複合基板から支持基板を除去することにより、半導体層を含む半導体ウエハを得る工程と、を含む半導体ウエハの製造方法である。 According to another aspect of the present invention, there is provided a support substrate including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including a metal element M, and a main surface side of the support substrate. A step of preparing a composite substrate including a main film, a step of obtaining a composite substrate with a semiconductor layer by growing at least one semiconductor layer on the main film of the composite substrate, and a semiconductor layer And removing the support substrate from the attached composite substrate to obtain a semiconductor wafer including a semiconductor layer.
　また、本発明は、さらに別の局面に従えば、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含み、直径が３インチ以上で、主面の算術平均粗さＲａが５０ｎｍ以下である複合基板用の支持基板である。 According to yet another aspect, the present invention includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing metal element M, has a diameter of 3 inches or more, and has a main surface. Is a support substrate for a composite substrate having an arithmetic average roughness Ra of 50 nm or less.
　本発明のかかる局面に従う複合基板用の支持基板において、金属元素Ｍをアルカリ土類金属元素ＭIIとすることができる。さらに、アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、支持基板の化学組成が、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点、ＭIIＡｌ12Ｏ19の化学組成を示す第２点、Ａｌ2Ｏ3の化学組成を示す第３点、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点、および第１点をこの順に直線で結んで形成される領域内の点で示すことができる。また、本発明にかかる複合基板の支持基板は、少なくとも一部を酸に溶解させることができる。 In the support substrate of the composite substrate according consuming aspect the present invention, the metal element M may be an alkaline earth metal element M II. Further comprising at least one element the alkaline earth metal element M II is Ca, it is selected from the group consisting of Sr and Ba, the chemical composition of the support substrate, M II O-Al 2 O 3 3 of -SiO 2 system In the component phase diagram, the first point indicating the chemical composition of M II Al 2 Si 2 O 8 , the second point indicating the chemical composition of M II Al 12 O 19 , the third point indicating the chemical composition of Al 2 O 3 , And a fourth point indicating the chemical composition of Al 6 Si 2 O 13 and a point in a region formed by connecting the first point with a straight line in this order. Further, at least a part of the support substrate of the composite substrate according to the present invention can be dissolved in an acid.
　本発明によれば、安定した管理工程で複合基板から支持基板を除去することにより、半導体ウエハを低コストで効率よく製造するために好適な複合基板、複合基板を用いた半導体ウエハの製造方法、および複合基板用の支持基板を提供できる。 According to the present invention, by removing the support substrate from the composite substrate in a stable management process, a composite substrate suitable for efficiently manufacturing a semiconductor wafer at low cost, a method for manufacturing a semiconductor wafer using the composite substrate, In addition, a supporting substrate for a composite substrate can be provided.
本発明のある局面に従う複合基板の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the composite substrate according to a certain situation of this invention. 本発明のある局面に従う複合基板における支持基板の化学組成を示す３成分相図の一例である。It is an example of a three-component phase diagram showing the chemical composition of a support substrate in a composite substrate according to an aspect of the present invention. 本発明のある局面に従う複合基板の製造方法の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the manufacturing method of the composite substrate according to an aspect with this invention. 本発明のある局面に従う複合基板の製造方法の別の例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the manufacturing method of the composite substrate according to an aspect with this invention. 本発明のある局面に従う複合基板の製造方法のさらに別の例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the manufacturing method of the composite substrate according to an aspect with this invention. 本発明のある局面に従う複合基板の製造方法のさらに別の例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the manufacturing method of the composite substrate according to an aspect with this invention. 本発明の別の局面に従う半導体ウエハの製造方法の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the manufacturing method of the semiconductor wafer according to another situation of this invention. 本発明のさらに別の局面に従う複合基板用の支持基板の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the support substrate for composite substrates according to another situation of this invention. 実施例の複合基板における支持基板の化学組成を示す３成分相図である。It is a 3 component phase diagram which shows the chemical composition of the support substrate in the composite substrate of an Example.
　［実施形態１］
　図１を参照して、本発明のある実施形態である複合基板１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相（以下、ＭＡｌ2Ｓｉ2Ｏ8結晶相、または単にＭＡｌ2Ｓｉ2Ｏ8相ともいう。）を含む支持基板１１と、支持基板１１の主面１１ｍ側に配置されている主膜１３と、を含む。本実施形態の複合基板１は、支持基板１１が金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含んでいることから、支持基板１１の除去を安定な状態で効率よく進めることができるため、低コストで効率よく半導体ウエハを製造することができる。ここで、アノーサイトとは、一般にＣａＡｌ2Ｓｉ2Ｏ8の化学組成を有する鉱物名であるが、本願においては、Ｃａをその他の金属元素で置き換えたものも含めてＭＡｌ2Ｓｉ2Ｏ8（金属元素Ｍは、Ｃａおよび／またはその他の金属元素）の化学組成を有するものの総称名とする。 [Embodiment 1]
Referring to FIG. 1, a composite substrate 1 according to an embodiment of the present invention includes a crystal phase (hereinafter referred to as MAl 2 Si) formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing a metal element M. 2 O 8 crystal phase, or simply MAl 2 Si 2 O 8 phase.) And a main film 13 disposed on the main surface 11 m side of the support substrate 11. The composite substrate 1 of the present embodiment includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing the metal element M, so that the support substrate 11 can be removed. Since the semiconductor wafer can be efficiently advanced in a stable state, a semiconductor wafer can be efficiently manufactured at a low cost. Here, anorthite is a mineral name generally having a chemical composition of CaAl 2 Si 2 O 8 , but in this application, MAl 2 Si 2 O 8 (including those in which Ca is replaced with other metal elements). The metal element M is a generic name for those having a chemical composition of Ca and / or other metal elements.
　（支持基板）
　図１を参照して、本実施形態の複合基板１に含まれる支持基板１１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む。かかるアノーサイトで形成される結晶相は、フッ化水素酸などの酸に溶解して除去されるとともに、研削または研磨などにより除去される。また、アノーサイトで形成される結晶相は、結晶相であるためその化学組成が安定しているため、フッ化水素酸などの酸による分解による除去および研磨または研磨などによる除去が安定して進行する。このため、本実施形態の複合基板１の支持基板１１の除去を安定な状態で効率よく進めることができる。 (Support substrate)
Referring to FIG. 1, support substrate 11 included in composite substrate 1 of the present embodiment includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including metal element M. The crystal phase formed by such anorthite is removed by dissolving in an acid such as hydrofluoric acid, and is removed by grinding or polishing. In addition, since the crystal phase formed by anorthite is a crystalline phase and its chemical composition is stable, removal by decomposition with an acid such as hydrofluoric acid and removal by polishing or polishing stably proceed. To do. For this reason, the removal of the support substrate 11 of the composite substrate 1 of this embodiment can be efficiently advanced in a stable state.
　また、支持基板１１は、ＭＯx（ｘは任意の正の実数）、Ａｌ2Ｏ3、およびＳｉＯ2の少なくとも１種類を含む非結晶相をさらに含む場合があり、このようなＭＯx、Ａｌ2Ｏ3、およびＳｉＯ2の少なくとも１種類を含む非結晶相もフッ化水素酸などの酸による分解による除去および研磨または研磨などによる除去を高める場合がある。 In addition, the support substrate 11 may further include an amorphous phase including at least one of MO x (x is an arbitrary positive real number), Al 2 O 3 , and SiO 2. Such MO x , Al An amorphous phase containing at least one of 2 O 3 and SiO 2 may also enhance removal by decomposition with an acid such as hydrofluoric acid and removal by polishing or polishing.
　支持基板１１に含まれる金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相において、金属元素Ｍはアノーサイトで結晶相を形成することができる限り特に制限はなく、Ｍｇ、Ｃａ、Ｓｒ、Ｂａなどの第２族の金属元素、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎなどの遷移金属元素ＭTなどとすることができる。安定性の高いアノーサイトの結晶相を形成する観点から、金属元素ＭはＣａ、Ｓｒ、Ｂａなどのアルカリ土類金属元素ＭIIであることが好ましい。 In the crystal phase formed of anorthite having the chemical composition of MAl 2 Si 2 O 8 including the metal element M contained in the support substrate 11, the metal element M is particularly limited as long as the crystal phase can be formed at the anorthite. but it may be Mg, Ca, Sr, group 2 metal elements such as Ba, Mn, Fe, Co, Ni, and the like transition metal element M T such Zn. From the viewpoint of forming a crystalline phase of high stability anorthite, the metal element M is Ca, Sr, is preferably Ba is an alkaline earth metal element M II such.
　さらに、支持基板１１に含まれるアルカリ土類金属元素ＭIIを含むＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相において、アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含むことが好ましい。アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含むことから、安定性が高いアノーサイトの結晶相が形成される。 Further, in the crystal phase formed of anorthite having a chemical composition of M II Al 2 Si 2 O 8 containing the alkaline earth metal element M II contained in the support substrate 11, the alkaline earth metal element M II is Ca, It is preferable to contain at least one element selected from the group consisting of Sr and Ba. Alkaline earth metal element M II is Ca, since it contains at least one element selected from the group consisting of Sr and Ba, the crystal phase of the high stability anorthite is formed.
　ここで、図１および図２を参照して、支持基板１１の化学組成は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含んでいる限り特に制限はないが、金属元素Ｍがアルカリ土類金属元素ＭIIであって、Ｃａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１、ＭIIＡｌ12Ｏ19の化学組成を示す第２点Ｐ２、Ａｌ2Ｏ3の化学組成を示す第３点Ｐ３、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点Ｐ４、および第１点Ｐ１をこの順に直線で結んで形成される領域Ｒ内の点で示されることが好ましい。支持基板１１の化学組成がかかる領域Ｒ内の点で示される場合は、支持基板の熱膨張係数およびフッ化水素酸などの酸に対する溶解性を好適な範囲で調整することができる。 Here, with reference to FIG. 1 and FIG. 2, as long as the chemical composition of the support substrate 11 includes a crystalline phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing the metal element M. Although there is no particular limitation, the metal element M is an alkaline earth metal element M II and includes at least one element selected from the group consisting of Ca, Sr and Ba, and M II O—Al 2 O 3 —SiO In the two -component three-component phase diagram, the first point P1 indicating the chemical composition of M II Al 2 Si 2 O 8 , the second point P2 indicating the chemical composition of M II Al 12 O 19 , and the chemical composition of Al 2 O 3 It is preferable that the third point P3 indicating the chemical composition of Al 6 Si 2 O 13 , the fourth point P4 indicating the chemical composition of Al 6 Si 2 O 13 , and the point in the region R formed by connecting the first point P1 in this order with a straight line. . When the chemical composition of the support substrate 11 is indicated by a point in the region R, the thermal expansion coefficient of the support substrate and the solubility in acids such as hydrofluoric acid can be adjusted within a suitable range.
　ここで、図２に示すＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図の３頂点にそれぞれ位置するＭIIＯ、Ａｌ2Ｏ3、およびＳｉＯ2は、熱膨張係数はＳｉＯ2が低くＭIIＯおよびＡｌ2Ｏ3が高く、フッ化水素酸に対する溶解性はＡｌ2Ｏ3が低くＳｉＯ2が高いという特性を有している。 Here, M II O, Al 2 O 3 , and SiO 2 located at the tops of the three component phase diagrams of the M II O—Al 2 O 3 —SiO 2 system shown in FIG. 2 is low, M II O and Al 2 O 3 are high, and the solubility in hydrofluoric acid is such that Al 2 O 3 is low and SiO 2 is high.
　また、図２に示す領域Ｒには、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１とＭIIＡｌ12Ｏ19の化学組成を示す第２点Ｐ２とを結ぶ第１直線Ｌ１、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１とＡｌ2Ｏ3の化学組成を示す第３点Ｐ３とを結ぶ第２直線Ｌ２、およびＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１とＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点Ｐ４とを結ぶ第３直線Ｌ３が含まれる。 Further, in the region R shown in FIG. 2, a first straight line connecting a first point P1 indicating the chemical composition of M II Al 2 Si 2 O 8 and a second point P2 indicating the chemical composition of M II Al 12 O 19 is present. L1, the second straight line L2 connecting the first point P1 indicating the chemical composition of M II Al 2 Si 2 O 8 and the third point P3 indicating the chemical composition of Al 2 O 3 , and M II Al 2 Si 2 O 8 A third straight line L3 connecting the first point P1 indicating the chemical composition of the first point P4 and the fourth point P4 indicating the chemical composition of the Al 6 Si 2 O 13 is included.
　図２に示す第１直線Ｌ１上の点で示される化学組成を有する支持基板１１は、結晶相としてＭIIＡｌ2Ｓｉ2Ｏ8相とＭIIＡｌ12Ｏ19相とを含む。図２に示す第２直線Ｌ２上の点で示される化学組成を有する支持基板１１は、結晶相としてＭIIＡｌ2Ｓｉ2Ｏ8相とＡｌ2Ｏ3相とを含む。図２に示す第３直線Ｌ３上の点で示される化学組成を有する支持基板１１は、結晶相としてＭIIＡｌ2Ｓｉ2Ｏ8相とＡｌ6Ｓｉ2Ｏ13相とを含む。 The support substrate 11 having a chemical composition indicated by a point on the first straight line L1 shown in FIG. 2 includes an M II Al 2 Si 2 O 8 phase and an M II Al 12 O 19 phase as crystal phases. The support substrate 11 having a chemical composition indicated by a point on the second straight line L2 shown in FIG. 2 includes an M II Al 2 Si 2 O 8 phase and an Al 2 O 3 phase as crystal phases. The support substrate 11 having a chemical composition indicated by a point on the third straight line L3 shown in FIG. 2 includes an M II Al 2 Si 2 O 8 phase and an Al 6 Si 2 O 13 phase as crystal phases.
　さらに、図２に示す領域Ｒは、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１、ＭIIＡｌ12Ｏ19の化学組成を示す第２点Ｐ２、Ａｌ2Ｏ3の化学組成を示す第３点Ｐ３、および第１点Ｐ１をこの順に直線で結んで得られる第１領域Ｒ１と、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点Ｐ１、Ａｌ2Ｏ3の化学組成を示す第３点Ｐ３、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点Ｐ４、および第１点Ｐ１をこの順に直線で結んで形成される第２領域Ｒ２とを含む。 Further, a region R shown in FIG. 2 includes a first point P1 indicating the chemical composition of M II Al 2 Si 2 O 8, a second point P2 indicating the chemical composition of M II Al 12 O 19 , and the chemistry of Al 2 O 3 . The first point P1 indicating the chemical composition of the first region R1 obtained by connecting the third point P3 indicating the composition and the first point P1 in a straight line in this order, and the chemical composition of M II Al 2 Si 2 O 8 , Al 2 O 3 A third point P3 indicating the chemical composition of the first, a fourth point P4 indicating the chemical composition of Al 6 Si 2 O 13 , and a second region R2 formed by connecting the first point P1 with a straight line in this order.
　図２に示す第１領域Ｒ１内の点で示される化学組成を有する支持基板１１は、結晶相としてＭIIＡｌ2Ｓｉ2Ｏ8相とＭIIＡｌ12Ｏ19相とＡｌ2Ｏ3相とを含む。図２に示す第２領域Ｒ２内の点で示されるＭIIＡｌ2Ｓｉ2Ｏ8相とＡｌ2Ｏ3相とＡｌ6Ｓｉ2Ｏ13相とを含む。 A support substrate 11 having a chemical composition indicated by a point in the first region R1 shown in FIG. 2 has an M II Al 2 Si 2 O 8 phase, an M II Al 12 O 19 phase, and an Al 2 O 3 phase as crystal phases. including. It includes an M II Al 2 Si 2 O 8 phase, an Al 2 O 3 phase, and an Al 6 Si 2 O 13 phase indicated by points in the second region R2 shown in FIG.
　ここで、支持基板１１におけるＭIIＡｌ2Ｓｉ2Ｏ8相、ＭIIＡｌ12Ｏ19相、Ａｌ2Ｏ3相およびＡｌ6Ｓｉ2Ｏ13相の存在の有無およびモル％は、Ｘ線回折により測定および同定される。 Here, the presence / absence and mole% of the M II Al 2 Si 2 O 8 phase, M II Al 12 O 19 phase, Al 2 O 3 phase and Al 6 Si 2 O 13 phase in the support substrate 11 are determined by X-ray diffraction. Measured and identified by
　本実施形態の複合基板１は、支持基板１１が金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含むため、支持基板１１の少なくとも一部がフッ化水素酸などの酸に溶解するため、効率よく支持基板１１を除去することができる。 Since the composite substrate 1 of the present embodiment includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including the metal element M, the support substrate 11 includes at least a part of the support substrate 11. Since it dissolves in an acid such as hydrofluoric acid, the support substrate 11 can be efficiently removed.
　（主膜）
　図１を参照して、本実施形態の複合基板１に含まれ、支持基板１１の主面１１ｍ側に配置されている主膜１３は、その上に半導体層を成長させることができるなどの物性を有する主膜であれば特に制限はなく、ＧａＮ膜、ＡｌＮ膜、ＧａＡｓ膜、ＩｎＰ膜などのＩＩＩ－Ｖ族化合物半導体膜、ダイヤモンド膜などのＣ（カーボン）膜、Ｓｉ膜、Ｇｅ膜などのＩＶ族元素半導体膜、ＳｉＣ膜、ＳｉＧｅ膜などのＩＶ族化合物半導体膜などが挙げられる。また、主膜１３は、上記の物性を有する主膜であれば結晶性の有無および結晶の形態を問わず、単結晶膜であっても、多結晶膜であっても、非晶質（アモルファス）膜であってもよい。 (Main membrane)
Referring to FIG. 1, the main film 13 included in the composite substrate 1 of the present embodiment and disposed on the main surface 11m side of the support substrate 11 has a physical property such that a semiconductor layer can be grown thereon. There is no particular limitation as long as it is a main film having a GaN film, a III-V group compound semiconductor film such as a GaN film, an AlN film, a GaAs film or an InP film, a C (carbon) film such as a diamond film, a Si film or a Ge film. IV group compound semiconductor films such as a group IV element semiconductor film, a SiC film, and a SiGe film may be used. The main film 13 may be a single-crystal film or a polycrystalline film, regardless of the presence or absence of crystallinity and the crystal form, as long as the main film has the above physical properties. ) It may be a film.
　主膜１３の厚さは、特に制限はないが、主膜１３上に結晶性の高い半導体層を成長させる観点から、０．０１μｍ以上が好ましく、０．０５μｍ以上がより好ましい。また、主膜１３の厚さは、主膜１３の材料コストを低減する観点から、５００μｍ以下が好ましく、２５０μｍ以下がより好ましい。 The thickness of the main film 13 is not particularly limited, but is preferably 0.01 μm or more and more preferably 0.05 μm or more from the viewpoint of growing a highly crystalline semiconductor layer on the main film 13. Further, the thickness of the main film 13 is preferably 500 μm or less, and more preferably 250 μm or less from the viewpoint of reducing the material cost of the main film 13.
　（接合膜）
　本実施形態の複合基板１は、支持基板１１と主膜１３との接合強度を高める観点から、支持基板１１と主膜１３との間に接合膜１２が形成されていることが好ましい。接合膜１２は、特に制限はないが、支持基板１１と主膜１３ｍとの接合強度を高める効果が高い観点から、ＳｉＯ2膜、Ｓｉ3Ｎ4膜、ＴｉＯ2膜、Ｇａ2Ｏ3膜などが好ましい。さらに、フッ化水素酸などの酸に溶解する観点から、ＳｉＯ2膜、Ｓｉ3Ｎ4膜などがより好ましい。 (Bonding film)
In the composite substrate 1 of the present embodiment, the bonding film 12 is preferably formed between the support substrate 11 and the main film 13 from the viewpoint of increasing the bonding strength between the support substrate 11 and the main film 13. Bonding film 12 is not particularly limited, from the effects is high in view of enhancing the bonding strength between the supporting substrate 11 and the main membrane 13m, SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, etc. Is preferred. Further, from the viewpoint of dissolving in an acid such as hydrofluoric acid, a SiO 2 film, a Si 3 N 4 film, or the like is more preferable.
　（支持基板の主面内の熱膨張係数と主膜の主面内の熱膨張係数との関係）
　本実施形態の複合基板１は、複合基板１の主膜１３上に反りが小さく転位密度が小さく結晶性の高い半導体層を成長させる観点から、支持基板１１の主面１１ｍ内の熱膨張係数αSが、主膜１３の主面１３ｍ内の熱膨張係数αFに比べて、０．８倍以上１．２倍以下が好ましく、０．９倍以上１．１倍以下がより好ましい。 (Relationship between the thermal expansion coefficient in the main surface of the support substrate and the thermal expansion coefficient in the main surface of the main film)
The composite substrate 1 of the present embodiment has a thermal expansion coefficient α in the main surface 11m of the support substrate 11 from the viewpoint of growing a semiconductor layer with low warpage, low dislocation density and high crystallinity on the main film 13 of the composite substrate 1. S is preferably 0.8 times or more and 1.2 times or less, and more preferably 0.9 times or more and 1.1 times or less as compared with the thermal expansion coefficient α F in the main surface 13 m of the main film 13.
　（複合基板の製造方法）
　本実施形態の複合基板１の製造方法は、支持基板１１の主面１１ｍ側に主膜１３を配置する方法であれば特に制限はなく、以下の方法が挙げられる。第１の方法は、支持基板１１の主面１１ｍ上に主膜１３を成長させる方法である（図示せず）。第２の方法は、図３を参照して、支持基板１１の主面１１ｍに、下地基板３０の主面３０ｎ上に成膜させた主膜１３を貼り合わせた後、下地基板３０を除去する方法である。第３の方法は、図４および図５を参照して、支持基板１１の主面１１ｍに主膜ドナー基板１３Ｄを貼り合わせた後、その主膜ドナー基板１３Ｄを貼り合わせ面から所定の深さの面で分離することにより支持基板１１の主面１１ｍ上に主膜１３を形成する方法である。第４の方法は、図６を参照して、支持基板１１の主面１１ｍに主膜ドナー基板１３Ｄを貼り合わせた後、その主膜ドナー基板１３Ｄを貼り合わせ面の反対側の主面から研削、研磨およびエッチングの少なくともいずれかにより厚さを減少させて調整することにより支持基板１１の主面１１ｍ上に主膜１３を形成する方法である。単結晶または多結晶で結晶性の高い主膜１３を形成する場合は、上記の第１の方法が困難であるため、上記の第２～第４のいずれかの方法が好ましく用いられる。 (Production method of composite substrate)
The method for manufacturing the composite substrate 1 of the present embodiment is not particularly limited as long as the main film 13 is disposed on the main surface 11 m side of the support substrate 11, and examples thereof include the following methods. The first method is a method of growing the main film 13 on the main surface 11m of the support substrate 11 (not shown). In the second method, referring to FIG. 3, after the main film 13 formed on the main surface 30n of the base substrate 30 is bonded to the main surface 11m of the support substrate 11, the base substrate 30 is removed. Is the method. In the third method, referring to FIG. 4 and FIG. 5, after the main film donor substrate 13D is bonded to the main surface 11m of the support substrate 11, the main film donor substrate 13D is formed to a predetermined depth from the bonded surface. In this method, the main film 13 is formed on the main surface 11 m of the support substrate 11. In the fourth method, referring to FIG. 6, after main film donor substrate 13D is bonded to main surface 11m of support substrate 11, main film donor substrate 13D is ground from the main surface opposite to the bonded surface. In this method, the main film 13 is formed on the main surface 11m of the support substrate 11 by adjusting the thickness by reducing the thickness by at least one of polishing and etching. When the main film 13 having a single crystal or polycrystal and high crystallinity is formed, the first method is difficult, and therefore any one of the second to fourth methods is preferably used.
　上記の第２の方法において、支持基板１１に主膜１３を貼り合わせる方法には、特に制限はなく、支持基板１１の主面１１ｍに直接主膜１３を貼り合わせる方法（図示せず）、支持基板１１の主面１１ｍに接合膜１２を介在させて主膜１３を貼り合わせる方法（図３を参照）などが挙げられる。また、上記の第３および第４の方法において、支持基板１１に主膜ドナー基板１３Ｄを貼り合わせる方法には、特に制限はなく、支持基板１１の主面１１ｍに主膜ドナー基板１３Ｄを貼り合わせる方法（図示せず）、支持基板１１の主面１１ｍに接合膜１２を介在させて主膜ドナー基板１３Ｄを貼り合わせる方法（図４～図６を参照）などが挙げられる。 In the second method, the method for bonding the main film 13 to the support substrate 11 is not particularly limited, and a method (not shown) for directly bonding the main film 13 to the main surface 11m of the support substrate 11 is supported. For example, a method of attaching the main film 13 to the main surface 11m of the substrate 11 with the bonding film 12 interposed (see FIG. 3) may be used. In the third and fourth methods described above, the method for bonding the main film donor substrate 13D to the support substrate 11 is not particularly limited, and the main film donor substrate 13D is bonded to the main surface 11m of the support substrate 11. Examples thereof include a method (not shown), a method in which the main film donor substrate 13D is bonded to the main surface 11m of the support substrate 11 with the bonding film 12 interposed (see FIGS. 4 to 6), and the like.
　図３を参照して、第２の方法により複合基板を製造する方法は、特に制限はないが、効率的に複合基板を製造する観点から、支持基板１１を準備する工程（図３（Ａ））と、下地基板３０の主面３０ｎ上に主膜１３を形成する工程（図３（Ｂ））と、支持基板１１と主膜１３とを貼り合わせて接合基板１Ｌを形成する工程（図３（Ｃ））と、接合基板１Ｌから下地基板３０を除去する工程（図３（Ｄ））と、を含むことが好ましい。 Referring to FIG. 3, the method of manufacturing the composite substrate by the second method is not particularly limited, but the step of preparing the support substrate 11 from the viewpoint of efficiently manufacturing the composite substrate (FIG. 3A). ), A step of forming the main film 13 on the main surface 30n of the base substrate 30 (FIG. 3B), and a step of bonding the support substrate 11 and the main film 13 to form the bonded substrate 1L (FIG. 3). (C)) and a step of removing the base substrate 30 from the bonding substrate 1L (FIG. 3D) are preferably included.
　図３（Ａ）を参照して、支持基板１１を準備する工程は、特に制限はなく、たとえば、金属元素Ｍを含む酸化物であるＭＯx（ｘは任意の正の実数）、Ａｌを含む酸化物であるＡｌ2Ｏ3、およびＳｉを含む酸化物であるＳｉＯ2を所定のモル比値で混合し焼結して得られる焼結体を所定の大きさに切り出して得られる基板の主面を研磨することにより行なうことができる。 Referring to FIG. 3A, the step of preparing support substrate 11 is not particularly limited, and includes, for example, MO x (x is an arbitrary positive real number) that is an oxide containing metal element M and Al. Main substrate of a substrate obtained by cutting a sintered body obtained by mixing and sintering Al 2 O 3 which is an oxide and SiO 2 which is an oxide containing Si at a predetermined molar ratio to a predetermined size This can be done by polishing the surface.
　図３（Ｂ）を参照して、下地基板３０の主面３０ｎ上に主膜１３を形成する工程は、ＭＯＣＶＤ（有機金属化学気相堆積）法、スパッタ法、ＭＢＥ（分子線エピタキシ）法、ＰＬＤ（パルス・レーザ堆積）法、ＨＶＰＥ（ハイドライド気相エピタキシ）法、昇華法、フラックス法、高窒素圧溶液法などにより好適に行なうことができる。 Referring to FIG. 3B, the process of forming the main film 13 on the main surface 30n of the base substrate 30 includes MOCVD (metal organic chemical vapor deposition) method, sputtering method, MBE (molecular beam epitaxy) method, PLD (pulse laser deposition) method, HVPE (hydride vapor phase epitaxy) method, sublimation method, flux method, high nitrogen pressure solution method and the like can be preferably used.
　図３（Ｃ）を参照して、支持基板１１と主膜１３とを貼り合わせて接合基板１Ｌを形成する工程は、支持基板１１の主面１１ｍ上に接合膜１２ａを形成するサブ工程（図３（Ｃ１））と、下地基板３０の主面３０ｎ上に形成された主膜１３の主面１３ｎ上に接合膜１２ｂを形成するサブ工程（図３（Ｃ２））と、支持基板１１の主面１１ｍ上に形成された接合膜１２ａと下地基板３０の主面３０ｎ上に形成された主膜１３の主面１３ｎ上に形成された接合膜１２ｂとを貼り合わせるサブ工程（図３（Ｃ３））と、を含む。これらのサブ工程により、互いに貼り合わされた接合膜１２ａと接合膜１２ｂとが接合により一体化して接合膜１２が形成され、支持基板１１と、下地基板３０上に形成された主膜１３とが、接合膜１２を介在させて接合されて、接合基板１Ｌが形成される。 Referring to FIG. 3C, the step of bonding the support substrate 11 and the main film 13 to form the bonding substrate 1L is a sub-step of forming the bonding film 12a on the main surface 11m of the support substrate 11 (FIG. 3). 3 (C1)), a sub-process (FIG. 3 (C2)) for forming the bonding film 12b on the main surface 13n of the main film 13 formed on the main surface 30n of the base substrate 30, and the main of the support substrate 11 A sub-process of bonding the bonding film 12a formed on the surface 11m and the bonding film 12b formed on the main surface 13n of the main film 13 formed on the main surface 30n of the base substrate 30 (FIG. 3C3) ) And. By these sub-processes, the bonding film 12a and the bonding film 12b bonded to each other are integrated by bonding to form the bonding film 12, and the support substrate 11 and the main film 13 formed on the base substrate 30 are formed. Bonding substrate 1L is formed by bonding with bonding film 12 interposed.
　ここで、接合膜１２ａ，１２ｂの形成方法は、特に制限はないが、膜形成コストを抑制する観点から、スパッタ法、蒸着法、ＣＶＤ（化学気相堆積）法などが好適に行なわれる。また、接合膜１２ａと接合膜１２ｂとを貼り合わせる方法は、特に制限はないが、支持基板１１と主膜１３とを貼り合わせる方法は、特に制限はなく、貼り合わせ面を洗浄しそのまま貼り合わせた後６００℃～１２００℃程度に昇温して接合する直接接合法、貼り合わせ面を洗浄しプラズマやイオンなどで活性化処理した後に室温（たとえば２５℃）～４００℃程度の低温雰囲気下で接合する表面活性化接合法、貼り合わせ面を薬液と純水で洗浄処理した後、０．１ＭＰａ～１０ＭＰａ程度の高圧力を掛けて接合する高圧接合法、貼り合わせ面を薬液と純水で洗浄処理した後、１０-6Ｐａ～１０-3Ｐａ程度の高真空雰囲気下で接合する高真空接合法、などが好適である。上記のいずれの接合法においてもそれらの接合後に６００℃～１２００℃程度に昇温することによりさらに接合強度を高めることができる。特に、表面活性化接合法、高圧接合法、および高真空接合法においては、それらの接合後に６００℃～１２００℃程度に昇温することによる接合強度を高める効果が大きい。 Here, the method of forming the bonding films 12a and 12b is not particularly limited, but from the viewpoint of suppressing the film formation cost, a sputtering method, a vapor deposition method, a CVD (chemical vapor deposition) method, or the like is preferably performed. The method for bonding the bonding film 12a and the bonding film 12b is not particularly limited, but the method for bonding the support substrate 11 and the main film 13 is not particularly limited, and the bonding surface is washed and bonded as it is. After that, a direct bonding method in which the temperature is raised to about 600 ° C. to 1200 ° C. for bonding, the bonded surface is cleaned and activated with plasma or ions, and then in a low temperature atmosphere of room temperature (for example, 25 ° C.) to about 400 ° C. Surface activated bonding method for bonding, high pressure bonding method for bonding by applying high pressure of about 0.1 MPa to 10 MPa after cleaning the bonded surface with chemical solution and pure water, cleaning the bonded surface with chemical solution and pure water A high vacuum bonding method in which bonding is performed in a high vacuum atmosphere of about 10 −6 Pa to 10 −3 Pa after the treatment is preferable. In any of the above bonding methods, the bonding strength can be further increased by raising the temperature to about 600 ° C. to 1200 ° C. after the bonding. In particular, in the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method, the effect of increasing the bonding strength by raising the temperature to about 600 ° C. to 1200 ° C. after the bonding is large.
　図３（Ｄ）を参照して、接合基板１Ｌから下地基板３０を除去する工程は、特に制限はないが、下地基板３０を効率的に除去する観点から、下地基板３０をフッ化水素酸などのエッチャントにより溶解させて除去する方法、下地基板３０の露出している主面側から研削または研磨により除去する方法などが好適に行なわれる。 Referring to FIG. 3D, the step of removing base substrate 30 from bonding substrate 1L is not particularly limited, but from the viewpoint of efficiently removing base substrate 30, base substrate 30 is made of hydrofluoric acid or the like. A method of removing by dissolving with an etchant and a method of removing by grinding or polishing from the exposed main surface side of the base substrate 30 are preferably performed.
　このようにして、支持基板１１と、支持基板１１の主面１１ｍ上に配置された接合膜１２と、接合膜１２の主面１２ｍ上に配置された主膜１３と、を含む複合基板１が得られる。 Thus, the composite substrate 1 including the support substrate 11, the bonding film 12 disposed on the main surface 11m of the support substrate 11, and the main film 13 disposed on the main surface 12m of the bonding film 12 is provided. can get.
　図４および図５を参照して、第３の方法により複合基板を製造する方法は、特に制限はないが、効率的に複合基板を製造する観点から、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせて接合基板１Ｌを形成する工程と（図４（Ａ）および図５（Ａ））と、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離する工程（図４（Ｂ）および図５（Ｂ））と、を含むことが好ましい。接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離する方法には、特に制限はないが、効率的な分離を行なう観点から、図４に示すようなイオン注入法、図５に示す切断法などが好ましい。 Referring to FIGS. 4 and 5, the method of manufacturing the composite substrate by the third method is not particularly limited, but from the viewpoint of efficiently manufacturing the composite substrate, the supporting substrate 11 and the main film donor substrate 13D Are bonded to each other to form a bonding substrate 1L (FIGS. 4A and 5A) and a main surface 13n which is a bonding surface of the main film donor substrate 13D of the bonding substrate 1L. It is preferable to include a step (FIG. 4B and FIG. 5B) of separating at a surface located at a depth. There is no particular limitation on the method of separating the main surface 13n, which is the bonding surface of the main film donor substrate 13D of the bonding substrate 1L, on the surface located at a predetermined depth inside, but from the viewpoint of efficient separation. An ion implantation method as shown in FIG. 4 and a cutting method as shown in FIG. 5 are preferable.
　図４に示すイオン注入法について以下に説明する。図４（Ａ）を参照して、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせて接合基板１Ｌを形成する工程は、支持基板１１の主面１１ｍ上に接合膜１２ａを形成するサブ工程（図４（Ａ１））と、主膜ドナー基板１３Ｄの主面１３ｎ側からイオンＩを注入することにより主面１３ｎから内部に所定の深さの位置の面にイオン注入領域１３ｉを形成するとともに主面１３ｎ上に接合膜１２ｂを形成するサブ工程（図４（Ａ２））と、支持基板１１の主面１１ｍ上に形成された接合膜１２ａと主膜ドナー基板１３Ｄの主面１３ｎ上に形成された接合膜１２ｂとを貼り合わせるサブ工程（図４（Ａ３））と、を含む。これらのサブ工程により、これらのサブ工程により、互いに貼り合わされた接合膜１２ａと接合膜１２ｂとが接合により一体化して接合膜１２が形成され、支持基板１１と、主膜ドナー基板１３Ｄとが、接合膜１２を介在させて接合されて、接合基板１Ｌが形成される。接合基板１Ｌの複合基板１の主膜ドナー基板１３Ｄの内部に注入されたイオンＩは、後工程においてガス化して急激な体積膨張を起こすことにより、主膜ドナー基板１３Ｄをイオン注入領域１３ｉで分離させる。 The ion implantation method shown in FIG. 4 will be described below. Referring to FIG. 4A, the step of bonding the support substrate 11 and the main film donor substrate 13D to form the bonding substrate 1L is a sub-step of forming the bonding film 12a on the main surface 11m of the support substrate 11. (FIG. 4 (A1)) and by implanting ions I from the main surface 13n side of the main film donor substrate 13D, an ion implantation region 13i is formed on the surface at a predetermined depth from the main surface 13n. A sub-process for forming the bonding film 12b on the main surface 13n (FIG. 4A2), and the bonding film 12a formed on the main surface 11m of the support substrate 11 and the main surface 13n of the main film donor substrate 13D. And a sub-process (FIG. 4 (A3)) for bonding the bonding film 12b thus formed. By these sub-processes, the bonding film 12a and the bonding film 12b bonded together by these sub-processes are integrated by bonding to form the bonding film 12, and the support substrate 11 and the main film donor substrate 13D are Bonding substrate 1L is formed by bonding with bonding film 12 interposed. The ions I implanted into the main film donor substrate 13D of the composite substrate 1 of the bonding substrate 1L are gasified in a later process to cause rapid volume expansion, thereby separating the main film donor substrate 13D at the ion implantation region 13i. Let
　主膜ドナー基板１３Ｄとは、後サブ工程において分離により主膜１３を提供するドナー基板である。かかる主膜ドナー基板１３Ｄを形成する方法は、上記の第２の方法により複合基板を製造する方法における主膜１３を形成する方法と同様である。また、接合膜１２ａ，１２ｂの形成方法は、第２の方法により複合基板を製造する方法における接合膜１２ａ，１２ｂの形成方法と同様である。また、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせる方法は、上記の第２の方法により複合基板を製造する方法における支持基板１１と主膜１３とを貼り合わせる方法と同様である。 The main film donor substrate 13D is a donor substrate that provides the main film 13 by separation in a subsequent sub-process. The method of forming the main film donor substrate 13D is the same as the method of forming the main film 13 in the method of manufacturing the composite substrate by the second method. The method for forming the bonding films 12a and 12b is the same as the method for forming the bonding films 12a and 12b in the method of manufacturing the composite substrate by the second method. The method of bonding the support substrate 11 and the main film donor substrate 13D is the same as the method of bonding the support substrate 11 and the main film 13 in the method of manufacturing the composite substrate by the second method.
　主膜ドナー基板１３Ｄに注入されるイオンＩは、特に制限はないが、主膜の品質の低下を抑制する観点およびイオン注入領域１３ｉに注入されたイオンＩのガス化温度を主膜１３の分解温度より低くする観点から、質量の小さい原子のイオン、たとえば、水素イオン、ヘリウムイオンなどが好ましい。 The ions I implanted into the main film donor substrate 13D are not particularly limited, but the gasification temperature of the ions I implanted into the ion implantation region 13i can be determined by decomposing the main film 13 although the deterioration of the quality of the main film is suppressed. From the viewpoint of lowering the temperature, ions of atoms with a small mass such as hydrogen ions and helium ions are preferable.
　図４（Ｂ）を参照して、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離する工程は、主膜ドナー基板１３Ｄに注入されたイオンＩをガス化させる方法であれば特に制限はない。たとえば、熱を加えたり、超音波を加えたりする方法などで、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面から所定の深さの位置に形成されているイオン注入領域１３ｉに注入されているイオンＩをガス化させて急激な体積膨張をさせることにより行なう。 Referring to FIG. 4B, the step of separating the main film donor substrate 13D of the bonding substrate 1L from the main surface 13n, which is the bonding surface, on the surface located at a predetermined depth inside is performed by the main film donor substrate 13D. There is no particular limitation as long as it is a method for gasifying the ions I implanted into the gas. For example, an ion implantation region 13i formed at a predetermined depth from the main surface, which is a bonding surface of the main film donor substrate 13D of the bonding substrate 1L, by a method of applying heat or applying ultrasonic waves. This is carried out by gasifying the ions I implanted into the substrate and causing rapid volume expansion.
　このようにして、接合基板１Ｌが主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離して、支持基板１１と、支持基板１１の主面１１ｍ上に配置された接合膜１２と、接合膜１２の主面１２ｍ上に配置された主膜１３と、を含む複合基板１が得られる。 In this way, the bonding substrate 1L is separated from the main surface 13n, which is a bonding surface of the main film donor substrate 13D, at a surface located at a predetermined depth inside, and the support substrate 11 and the main surface of the support substrate 11 are separated. The composite substrate 1 including the bonding film 12 disposed on 11 m and the main film 13 disposed on the main surface 12 m of the bonding film 12 is obtained.
　図５に示す切断法について以下に説明する。図５（Ａ）を参照して、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせて接合基板１Ｌを形成する工程は、支持基板１１の主面１１ｍ上に接合膜１２ａを形成するサブ工程（図５（Ａ１））と、主膜ドナー基板１３Ｄの主面１３ｎ上に接合膜１２ｂを形成するサブ工程（図５（Ａ２））と、支持基板１１の主面１１ｍ上に形成された接合膜１２ａと主膜ドナー基板１３Ｄの主面１３ｎ上に形成された接合膜１２ｂとを貼り合わせるサブ工程（図５（Ａ３））と、を含む。これらのサブ工程により、これらのサブ工程により、互いに貼り合わされた接合膜１２ａと接合膜１２ｂとが接合により一体化して接合膜１２が形成され、支持基板１１と、主膜ドナー基板１３Ｄとが、接合膜１２を介在させて接合されて、接合基板１Ｌが形成される。 The cutting method shown in FIG. 5 will be described below. Referring to FIG. 5A, the step of bonding the support substrate 11 and the main film donor substrate 13D to form the bonding substrate 1L is a sub-step of forming the bonding film 12a on the main surface 11m of the support substrate 11. (FIG. 5 (A1)), a sub-process (FIG. 5 (A2)) for forming the bonding film 12b on the main surface 13n of the main film donor substrate 13D, and a bonding formed on the main surface 11m of the support substrate 11 A sub-process (FIG. 5 (A3)) for bonding the film 12a and the bonding film 12b formed on the main surface 13n of the main film donor substrate 13D. By these sub-processes, the bonding film 12a and the bonding film 12b bonded together by these sub-processes are integrated by bonding to form the bonding film 12, and the support substrate 11 and the main film donor substrate 13D are Bonding substrate 1L is formed by bonding with bonding film 12 interposed.
　図５（Ｂ）を参照して、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離する工程は、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で主膜ドナー基板１３Ｄを切断することにより行なう。主膜ドナー基板を切断する方法は、特に制限なく、ワイヤソー、内周刃、外周刃などが好適に用いられる。 Referring to FIG. 5B, the step of separating the main surface 13n of the bonding substrate 1L from the main surface 13n, which is the bonding surface of the main film donor substrate 13D, with a surface located at a predetermined depth inside the main surface 13n of the bonding substrate 1L. This is performed by cutting the main film donor substrate 13D from a main surface 13n, which is a bonding surface of the film donor substrate 13D, at a surface located at a predetermined depth inside. The method for cutting the main film donor substrate is not particularly limited, and a wire saw, an inner peripheral blade, an outer peripheral blade and the like are preferably used.
　このようにして、接合基板１Ｌが主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎから内部に所定の深さに位置する面で分離して、支持基板１１と、支持基板１１の主面１１ｍ上に配置された接合膜１２と、接合膜１２の主面１２ｍ上に配置された主膜１３と、を含む複合基板１が得られる。 In this way, the bonding substrate 1L is separated from the main surface 13n, which is a bonding surface of the main film donor substrate 13D, at a surface located at a predetermined depth inside, and the support substrate 11 and the main surface of the support substrate 11 are separated. The composite substrate 1 including the bonding film 12 disposed on 11 m and the main film 13 disposed on the main surface 12 m of the bonding film 12 is obtained.
　図６を参照して、第４の方法により複合基板を製造する方法は、特に制限はないが、効率的に複合基板を製造する観点から、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせて接合基板１Ｌを形成する工程と（図６（Ａ））と、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎと反対側の主面１３ｍから研削、研磨およびエッチングの少なくともいずれかを行なう工程（図６（Ｂ））と、を含むことが好ましい。 Referring to FIG. 6, the method of manufacturing the composite substrate by the fourth method is not particularly limited, but the support substrate 11 and the main film donor substrate 13D are bonded together from the viewpoint of efficiently manufacturing the composite substrate. The bonding substrate 1L is formed (FIG. 6A), and the main surface 13m opposite to the main surface 13n, which is the bonding surface of the main film donor substrate 13D of the bonding substrate 1L, is ground, polished, and etched. And a step of performing at least one of them (FIG. 6B).
　図６（Ａ）を参照して、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせて接合基板１Ｌを形成する工程は、支持基板１１の主面１１ｍ上に接合膜１２ａを形成するサブ工程（図６（Ａ１））と、主膜ドナー基板１３Ｄの主面１３ｎ上に接合膜１２ｂを形成するサブ工程（図６（Ａ２））と、支持基板１１の主面１１ｍ上に形成された接合膜１２ａと主膜ドナー基板１３Ｄの主面１３ｎ上に形成された接合膜１２ｂとを貼り合わせるサブ工程（図６（Ａ３））と、を含む。これらのサブ工程により、これらのサブ工程により、互いに貼り合わされた接合膜１２ａと接合膜１２ｂとが接合により一体化して接合膜１２が形成され、支持基板１１と、主膜ドナー基板１３Ｄとが、接合膜１２を介在させて接合されて、接合基板１Ｌが形成される。 Referring to FIG. 6A, the step of bonding the support substrate 11 and the main film donor substrate 13D to form the bonding substrate 1L is a sub-step of forming the bonding film 12a on the main surface 11m of the support substrate 11. (FIG. 6 (A1)), a sub-process (FIG. 6 (A2)) for forming the bonding film 12b on the main surface 13n of the main film donor substrate 13D, and a bonding formed on the main surface 11m of the support substrate 11 A sub-process (FIG. 6 (A3)) for bonding the film 12a and the bonding film 12b formed over the main surface 13n of the main film donor substrate 13D. By these sub-processes, the bonding film 12a and the bonding film 12b bonded together by these sub-processes are integrated by bonding to form the bonding film 12, and the support substrate 11 and the main film donor substrate 13D are Bonding substrate 1L is formed by bonding with bonding film 12 interposed.
　主膜ドナー基板１３Ｄとは、上記第３の方法と同様に、後サブ工程において分離により主膜１３を提供するドナー基板である。かかる主膜ドナー基板１３Ｄを形成する方法は、上記の第２および第３の方法により複合基板を製造する方法における主膜１３を形成する方法と同様である。また、接合膜１２ａ，１２ｂの形成方法は、第２および第３の方法により複合基板を製造する方法における接合膜１２ａ，１２ｂの形成方法と同様である。また、支持基板１１と主膜ドナー基板１３Ｄとを貼り合わせる方法は、上記の第２および第３の方法により複合基板を製造する方法における支持基板１１と主膜１３とを貼り合わせる方法と同様である。 The main film donor substrate 13D is a donor substrate that provides the main film 13 by separation in a subsequent sub-process, as in the third method. The method of forming the main film donor substrate 13D is the same as the method of forming the main film 13 in the method of manufacturing the composite substrate by the second and third methods. The method for forming the bonding films 12a and 12b is the same as the method for forming the bonding films 12a and 12b in the method of manufacturing the composite substrate by the second and third methods. The method of bonding the support substrate 11 and the main film donor substrate 13D is the same as the method of bonding the support substrate 11 and the main film 13 in the method of manufacturing the composite substrate by the second and third methods. is there.
　図６（Ｂ）を参照して、接合基板１Ｌの主膜ドナー基板１３Ｄの貼り合わせ面である主面１３ｎと反対側の主面１３ｍから研削、研磨およびエッチングの少なくともいずれかを行なう工程により、主膜ドナー基板１３Ｄの膜厚を減少させて所望の厚さの主膜１３が形成されるため、支持基板１１と、支持基板１１の主面１１ｍ上に配置された接合膜１２と、接合膜１２の主面１２ｍ上に配置された主膜１３と、を含む複合基板１が得られる。 With reference to FIG. 6B, by a step of performing at least one of grinding, polishing and etching from the main surface 13m opposite to the main surface 13n which is the bonding surface of the main film donor substrate 13D of the bonding substrate 1L. Since the main film 13 having a desired thickness is formed by reducing the film thickness of the main film donor substrate 13D, the support substrate 11, the bonding film 12 disposed on the main surface 11m of the support substrate 11, and the bonding film The composite substrate 1 including the main film 13 disposed on the 12 main surfaces 12m is obtained.
　ここで、主膜ドナー基板１３Ｄを研削する方法は、特に制限はなく、砥石による研削（平面研削）、ショット・ブラストなどが挙げられる。主膜ドナー基板１３Ｄを研磨する方法は、特に制限はなく、機械的研磨、化学機械的研磨などが挙げられる。主膜ドナー基板１３Ｄをエッチングする方法は、特に制限はなく、薬液によるウェットエッチング、ＲＩＥ（反応性イオンエッチング）などのドライエッチングなどが挙げられる。 Here, the method of grinding the main film donor substrate 13D is not particularly limited, and examples thereof include grinding with a grindstone (surface grinding) and shot blasting. The method for polishing the main film donor substrate 13D is not particularly limited, and examples thereof include mechanical polishing and chemical mechanical polishing. The method for etching the main film donor substrate 13D is not particularly limited, and examples include wet etching with a chemical solution and dry etching such as RIE (reactive ion etching).
　［実施形態２］
　図７を参照して、本発明の別の実施形態である半導体ウエハの製造方法は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む支持基板１１と、支持基板１１の主面１１ｍ側に配置されている主膜１３と、を含む複合基板１を準備する工程（図７（Ａ））と、複合基板１の主膜１３上に、少なくとも１層の半導体層２０を成長させることにより、半導体層付複合基板２を得る工程（図７（Ｂ））と、半導体層付複合基板２から支持基板１１を除去することにより、半導体層２０を含む半導体ウエハ３を得る工程（図７（Ｃ））と、を含む。本実施形態の半導体ウエハの製造方法は、支持基板１１が金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む支持基板１１と支持基板１１の主面１１ｍ側に配置されている主膜１３とを含む複合基板１を用いることにより、主膜１３上に少なくとも１層の半導体層２０を成長させた後、支持基板１１の除去を安定な状態で効率よく進めることができるため、低コストで効率よく半導体ウエハを製造することができる。 [Embodiment 2]
Referring to FIG. 7, a method for manufacturing a semiconductor wafer according to another embodiment of the present invention includes a support including a crystalline phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing metal element M. On the main film 13 of the composite substrate 1, a step of preparing the composite substrate 1 including the substrate 11 and the main film 13 disposed on the main surface 11m side of the support substrate 11 (FIG. 7A), At least one semiconductor layer 20 is grown to obtain the composite substrate 2 with a semiconductor layer (FIG. 7B), and the support substrate 11 is removed from the composite substrate 2 with a semiconductor layer, thereby obtaining the semiconductor layer 20. And a step of obtaining a semiconductor wafer 3 including (FIG. 7C). In the method for manufacturing a semiconductor wafer according to the present embodiment, the support substrate 11 includes a support substrate 11 including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including a metal element M, and the support substrate 11. By using the composite substrate 1 including the main film 13 disposed on the surface 11m side, after the growth of at least one semiconductor layer 20 on the main film 13, the support substrate 11 can be removed in a stable state. Since it can proceed efficiently, a semiconductor wafer can be manufactured efficiently at low cost.
　（複合基板を準備する工程）
　図７（Ａ）を参照して、複合基板１を準備する工程は、上記の実施形態１の複合基板１の製造方法と同様である。 (Process to prepare composite substrate)
Referring to FIG. 7A, the step of preparing composite substrate 1 is the same as the method for manufacturing composite substrate 1 of the first embodiment.
　（半導体層付複合基板を得る工程）
　図７（Ｂ）を参照して、半導体層付複合基板２を得る工程は、複合基板１の主膜１３上に、少なくとも１層の半導体層２０を成長させることにより行なわれる。少なくとも１層の半導体層２０を成長させる方法は、特に制限はなく、ＭＯＣＶＤ（有機金属化学気相堆積）法、スパッタ法、ＭＢＥ（分子線エピタキシ）法、ＰＬＤ（パルス・レーザ堆積）法、ＨＶＰＥ（ハイドライド気相エピタキシ）法、昇華法、フラックス法、高窒素圧溶液法などが好適に挙げられる。 (Step of obtaining a composite substrate with a semiconductor layer)
With reference to FIG. 7B, the step of obtaining the composite substrate 2 with a semiconductor layer is performed by growing at least one semiconductor layer 20 on the main film 13 of the composite substrate 1. The method for growing at least one semiconductor layer 20 is not particularly limited, and MOCVD (metal organic chemical vapor deposition) method, sputtering method, MBE (molecular beam epitaxy) method, PLD (pulse laser deposition) method, HVPE. Preferable examples include (hydride vapor phase epitaxy) method, sublimation method, flux method, high nitrogen pressure solution method and the like.
　複合基板１の主膜１３上に成長させる少なくとも１層の半導体層２０は、品質のよい半導体層２０を成長させる観点から、半導体層２０は、主膜１３に比べて、化学組成が近似することが好ましく、同一であることがより好ましい。ここで、化学組成が近似するとは、構成元素が、同一ではないが、いずれもＩＩＩ－Ｖ族化合物、ＩＶ族元素、またはＩＶ族化合物であることをいう。化学組成が同一とは、構成元素が同一であることをいう。 At least one semiconductor layer 20 grown on the main film 13 of the composite substrate 1 is similar in chemical composition to the semiconductor layer 20 compared to the main film 13 from the viewpoint of growing a high-quality semiconductor layer 20. Are preferable, and the same is more preferable. Here, the approximate chemical composition means that the constituent elements are not the same, but all are III-V group compounds, IV group elements, or IV group compounds. The same chemical composition means that the constituent elements are the same.
　また、成長させる半導体層２０の結晶性を向上させる観点から、複合基板１の主膜１３の主面１３ｍ上に少なくとも半導体層２０を成長させる工程は、主膜１３の主面１３ｍ上に半導体バッファ層２１を成長させるサブ工程と、半導体バッファ層２１の主面２１ｍ上に半導体結晶層２３を成長させるサブ工程と、を含むことが好ましい。ここで、半導体バッファ層２１とは、半導体結晶層２３に比べて低い温度で成長される結晶性が低いまたは非晶質（アモルファス）の層をいう。 In addition, from the viewpoint of improving the crystallinity of the semiconductor layer 20 to be grown, the step of growing at least the semiconductor layer 20 on the main surface 13m of the main film 13 of the composite substrate 1 includes a semiconductor buffer on the main surface 13m of the main film 13. It is preferable to include a sub-process for growing the layer 21 and a sub-process for growing the semiconductor crystal layer 23 on the main surface 21 m of the semiconductor buffer layer 21. Here, the semiconductor buffer layer 21 refers to a layer having low crystallinity or an amorphous state grown at a lower temperature than the semiconductor crystal layer 23.
　このようにして、複合基板１の主膜１３上に少なくとも１層の半導体層２０が配置された半導体層付複合基板２が得られる。 Thus, the composite substrate 2 with a semiconductor layer in which at least one semiconductor layer 20 is disposed on the main film 13 of the composite substrate 1 is obtained.
　（半導体ウエハを得る工程）
　図７（Ｃ）を参照して、半導体層２０を含む半導体ウエハ３を得る工程は、半導体層付複合基板２から支持基板１１を除去することにより行なわれる。支持基板１１を除去する方法は、特に制限はないが、支持基板１１を効率的に除去する観点から、支持基板１１をエッチングにより溶解させて除去する方法、支持基板１１を研削または研磨により除去する方法が好ましい。 (Process for obtaining a semiconductor wafer)
Referring to FIG. 7C, the step of obtaining semiconductor wafer 3 including semiconductor layer 20 is performed by removing support substrate 11 from composite substrate 2 with a semiconductor layer. The method for removing the support substrate 11 is not particularly limited, but from the viewpoint of efficiently removing the support substrate 11, a method for removing the support substrate 11 by etching, or removing the support substrate 11 by grinding or polishing. The method is preferred.
　複合基板１に含まれる支持基板１１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む。かかるアノーサイトで形成される結晶相は、フッ化水素酸などの酸に溶解して除去されるとともに、研削または研磨などにより除去される。また、アノーサイトで形成される結晶相は、結晶相であるためその化学組成が安定しているため、フッ化水素酸などの酸による分解による除去および研磨または研磨などによる除去が安定して進行する。 The support substrate 11 included in the composite substrate 1 includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including the metal element M. The crystal phase formed by such anorthite is removed by dissolving in an acid such as hydrofluoric acid, and is removed by grinding or polishing. In addition, since the crystal phase formed by anorthite is a crystalline phase and its chemical composition is stable, removal by decomposition with an acid such as hydrofluoric acid and removal by polishing or polishing stably proceed. To do.
　このようにして、半導体層付複合基板２から支持基板１１が除去され、半導体層２０を含む半導体ウエハ３が得られる。 In this way, the support substrate 11 is removed from the composite substrate 2 with a semiconductor layer, and the semiconductor wafer 3 including the semiconductor layer 20 is obtained.
　［実施形態３］
　図１および図８を参照して、本発明のさらに別の実施形態である複合基板１用の支持基板１１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含み、直径が３インチ以上で、主面１１ｍの算術平均粗さＲａが５０ｎｍ以下である。 [Embodiment 3]
Referring to FIGS. 1 and 8, a support substrate 11 for a composite substrate 1 which is still another embodiment of the present invention is formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing a metal element M. The crystal phase is 3 inches or more, and the arithmetic average roughness Ra of the main surface 11 m is 50 nm or less.
　本実施形態の複合基板１用の支持基板１１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含み、直径が３インチ以上で、主面１１ｍの算術平均粗さＲａが５０ｎｍ以下であることから、大口径で厚さが均一な主膜１３と、安定な状態で効率よく除去することができる支持基板１１と、を含む複合基板１を製造することができる。 The support substrate 11 for the composite substrate 1 of the present embodiment includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing a metal element M, has a diameter of 3 inches or more, and has a main surface. Since the arithmetic average roughness Ra of 11 m is 50 nm or less, the composite substrate 1 including the main film 13 having a large diameter and a uniform thickness and the support substrate 11 that can be efficiently removed in a stable state is provided. Can be manufactured.
　本実施形態の複合基板１用の支持基板１１は、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む。ここで、金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相は、実施形態１の支持基板１１において説明した金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相と同様である。 The support substrate 11 for the composite substrate 1 of the present embodiment includes a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing a metal element M. Here, MAl 2 Si 2 O 8 crystal phase formed by anorthite, containing a metal element M described in the supporting substrate 11 of Embodiment 1 having the chemical composition of MAl 2 Si 2 O 8 containing a metal element M It is the same as the crystal phase formed with anorthite having the chemical composition of
　また、本実施形態の複合基板１用の支持基板１１は、直径が３インチ（７．６２ｃｍ）以上である。複合基板１用の支持基板１１は、大口径の複合基板１を形成する観点から、直径は、３インチ（７．６２ｃｍ）以上であり、４インチ（１０．１６ｃｍ）以上が好ましく、６インチ（１５．２４ｃｍ）以上がより好ましい。また、複合基板１用の支持基板１１は、割れおよび反りを低減するとともに主面の均一性を保持するなどの観点から、１８インチ（４５．７２ｃｍ）以下が好ましく、１２インチ（３０．４８ｃｍ）以下がより好ましい。 Further, the support substrate 11 for the composite substrate 1 of the present embodiment has a diameter of 3 inches (7.62 cm) or more. From the viewpoint of forming the large-diameter composite substrate 1, the support substrate 11 for the composite substrate 1 has a diameter of 3 inches (7.62 cm) or more, preferably 4 inches (10.16 cm) or more, and 6 inches ( 15.24 cm) or more is more preferable. The support substrate 11 for the composite substrate 1 is preferably 18 inches (45.72 cm) or less, and preferably 12 inches (30.48 cm) from the viewpoint of reducing cracks and warpage and maintaining the uniformity of the main surface. The following is more preferable.
　また、本実施形態の複合基板１用の支持基板１１は、主面１１ｍの算術平均粗さＲａが５０ｎｍ以下である。本実施形態の複合基板１用の支持基板１１の主面１１ｍの算術平均粗さＲａは、複合基板１の主面１ｍの面積（この面積は、図１を参照して、支持基板１１の主面１１ｍの面積に等しく、主膜１３の主面１３ｍの面積に等しい。）に対する接合面積の百分率である接合面積率を高くする観点から、５０ｎｍ以下であり、１０ｎｍ以下が好ましく、５ｎｍ以下がより好ましく、１ｎｍ以下がさらに好ましい。また、複合基板１用の支持基板１１の主面１１ｍの算術平均粗さＲａは、主面の加工コストを抑制する観点から、０．５ｎｍ以上が好ましく、１ｎｍ以上がより好ましい。 Further, the support substrate 11 for the composite substrate 1 of the present embodiment has an arithmetic average roughness Ra of the main surface 11m of 50 nm or less. The arithmetic mean roughness Ra of the main surface 11m of the support substrate 11 for the composite substrate 1 of the present embodiment is the area of the main surface 1m of the composite substrate 1 (this area is the main surface of the support substrate 11 with reference to FIG. Is equal to the area of the surface 11 m and is equal to the area of the main surface 13 m of the main film 13), from the viewpoint of increasing the bonding area ratio, which is a percentage of the bonding area with respect to the main film 13. 1 nm or less is more preferable. In addition, the arithmetic average roughness Ra of the main surface 11m of the support substrate 11 for the composite substrate 1 is preferably 0.5 nm or more and more preferably 1 nm or more from the viewpoint of suppressing the processing cost of the main surface.
　ここで、主面の算術平均粗さＲａとは、ＪＩＳ　Ｂ０６０１に規定する算術平均粗さＲａであり、粗さ曲面から、その平均平面の方向に基準面積（本願においては１０μｍ×１０μｍの測定領域）を抜き取り、この抜き取り部分の平均平面から測定曲面までの距離（偏差）の絶対値を合計してそれを基準面積で平均した値をいい、ＡＦＭ（原子間力顕微鏡）、光干渉式粗さ計、レーザ顕微鏡、触針式粗さ計などにより測定される。 Here, the arithmetic average roughness Ra of the main surface is the arithmetic average roughness Ra defined in JIS B0601, and the reference area (in this application, a measurement area of 10 μm × 10 μm in the direction of the average plane from the roughness curved surface) ), And the absolute value of the distance (deviation) from the average plane to the measurement curved surface of the extracted part is summed and averaged over the reference area. AFM (Atomic Force Microscope), optical interference roughness It is measured by a meter, a laser microscope, a stylus type roughness meter, or the like.
　また、本実施形態の複合基板１用の支持基板１１は、実施形態１の複合基板１における支持基板１１と同様に、支持基板１１に含まれる金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相において、金属元素Ｍはアルカリ土類金属元素ＭIIであることが好ましい。 Further, the support substrate 11 for the composite substrate 1 of this embodiment is similar to the support substrate 11 in the composite substrate 1 of Embodiment 1 in the chemistry of MAl 2 Si 2 O 8 containing the metal element M contained in the support substrate 11. in the crystal phases formed in the anorthite has a composition, it is preferred that the metal element M is an alkaline earth metal element M II.
　また、本実施形態の複合基板１用の支持基板１１は、実施形態１の複合基板１における支持基板１１と同様に、アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、支持基板１１の化学組成が、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点、ＭIIＡｌ12Ｏ19の化学組成を示す第２点、Ａｌ2Ｏ3の化学組成を示す第３点、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点、および第１点をこの順に直線で結んで形成される領域内の点で示されることが好ましい。 Further, the support substrate 11 of composite substrate 1 of this embodiment, as the supporting substrate 11 in composite substrate 1 of the embodiment 1, selected from the group alkaline earth metal element M II consists of Ca, Sr and Ba comprises at least one element, the chemical composition of the support substrate 11, M II in O-Al 2 O 3 3 component phase diagram -SiO 2 system, the first indicating the chemical composition of the M II Al 2 Si 2 O 8 Point, second point indicating the chemical composition of M II Al 12 O 19 , third point indicating the chemical composition of Al 2 O 3 , fourth point indicating the chemical composition of Al 6 Si 2 O 13 , and first point Are preferably indicated by points in a region formed by connecting them in a straight line in this order.
　また、本実施形態の複合基板１用の支持基板１１は、実施形態１の複合基板１における支持基板１１と同様に、少なくとも一部が酸に溶解することが好ましい。 Moreover, it is preferable that at least a part of the support substrate 11 for the composite substrate 1 of the present embodiment is dissolved in an acid, like the support substrate 11 in the composite substrate 1 of the first embodiment.
　なお、複合基板１用の支持基板１１は、上記以外の特性においても、実施形態１の複合基板１における支持基板１１と同様であるため、ここでは繰り返さない。 Note that the support substrate 11 for the composite substrate 1 is the same as the support substrate 11 in the composite substrate 1 of Embodiment 1 in the characteristics other than those described above, and therefore, is not repeated here.
　（実施例１）
　１．支持基板の準備
　表１に示す支持基板の化学組成の形成に必要な化学量論比のアルカリ土類金属元素炭酸塩（ＭIIＣＯ3）粉末（ＭIIはアルカリ土類金属元素、以下同じ。）、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料として、圧力５０ＭＰａにてプレス成型後、大気雰囲気中１５００℃で２０時間焼結した後、１６５０℃、２０００気圧で３時間ＨＩＰ（熱間等方圧プレス）焼結することにより、２６種類の焼結体ＳＲ１、Ｓ１～Ｓ２５を得た。 (Example 1)
1. Preparation of Support Substrate Alkaline earth metal element carbonate (M II CO 3 ) powder (M II is an alkaline earth metal element) having the stoichiometric ratio necessary for forming the chemical composition of the support substrate shown in Table 1. ), Alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder as starting materials, press-molded at a pressure of 50 MPa, sintered in an air atmosphere at 1500 ° C. for 20 hours, and then at 1650 ° C. and 2000 atm. 26 types of sintered bodies SR1, S1 to S25 were obtained by sintering for 3 hours HIP (hot isostatic pressing).
　得られた２６種類の焼結体ＳＲ１、Ｓ１～Ｓ２５を、それぞれ、スライスした後主面をＪＩＳ　Ｂ０６０１に規定する算術平均粗さＲａが１ｎｍ以下に研磨することにより、図４に示す支持基板１１として直径６インチ（１５．２４ｃｍ）で厚さ４００μｍの２６種類の支持基板ＳＲ１、Ｓ１～Ｓ２５を得た。得られた２６種類の支持基板ＳＲ１、Ｓ１～Ｓ２５の化学組成、平均粒子径および図９に示す３成分相図上の位置を表１に示した。２６種類の支持基板ＳＲ１、Ｓ１～Ｓ２５の化学組成は、Ｘ線回折により測定および同定した。表１に示すように、支持基板ＳＲ１にはＭIIＡｌ2Ｓｉ2Ｏ8（ＭIIはアルカリ土類金属元素）の結晶相が含まれておらず、支持基板Ｓ１～Ｓ２５にはＭIIＡｌ2Ｓｉ2Ｏ8の結晶相が含まれていた。 The obtained 26 types of sintered bodies SR1, S1 to S25 are each sliced, and the principal surface is polished to an arithmetic average roughness Ra defined in JIS B0601 to 1 nm or less, whereby the support substrate 11 shown in FIG. As a result, 26 types of support substrates SR1, S1 to S25 having a diameter of 6 inches (15.24 cm) and a thickness of 400 μm were obtained. Table 1 shows the chemical compositions, average particle diameters, and positions on the three-component phase diagram shown in FIG. 9 of the 26 types of support substrates SR1 and S1 to S25 obtained. The chemical compositions of the 26 types of support substrates SR1, S1 to S25 were measured and identified by X-ray diffraction. As shown in Table 1, the support substrate SR1 does not contain a crystal phase of M II Al 2 Si 2 O 8 (M II is an alkaline earth metal element), and the support substrates S1 to S25 have M II Al A crystal phase of 2 Si 2 O 8 was included.
　２．複合基板の作製
　図４（Ａ）中の（Ａ１）を参照して、支持基板１１である支持基板ＳＲ１、Ｓ１～Ｓ２５のそれぞれの主面１１ｍ上に厚さ１μｍのＳｉＯ2膜をＣＶＤ（化学気相堆積）法により成膜した。次いで、かかる支持基板ＳＲ１、Ｓ１～Ｓ２５のそれぞれの主面１１ｍ上の厚さ１μｍのＳｉＯ2膜を研磨することにより、厚さ０．５μｍのＳｉＯ2膜だけ残存させて、主面１２ａｍが鏡面化（本願においては、ＪＩＳ　Ｂ０６０１に規定する算術平均粗さＲａが１ｎｍ以下の状態にすることをいう、以下同じ。）された接合膜１２ａを形成した。 2. Production of Composite Substrate With reference to (A1) in FIG. 4A, a SiO 2 film having a thickness of 1 μm is formed on the main surface 11m of each of the support substrates SR1 and S1 to S25 as the support substrate 11 by CVD (chemical The film was formed by the vapor deposition method. Next, by polishing the 1 μm thick SiO 2 film on the main surface 11 m of each of the support substrates SR 1, S 1 to S 25, only the 0.5 μm thick SiO 2 film remains, and the main surface 12 am becomes a mirror surface. In this application, the bonding film 12a was formed (which means that the arithmetic average roughness Ra specified in JIS B0601 is 1 nm or less, the same applies hereinafter).
　また、図４（Ａ）中の（Ａ２）を参照して、主膜ドナー基板１３Ｄとして、ＨＶＰＥ法により成長させた直径６インチ（１５．２４ｃｍ）で厚さが５ｃｍのＧａＮ基板を準備した。かかる主膜ドナー基板１３ＤのＮ原子面である（０００－１）面側の主面１３ｎ上に、厚さ１μｍのＳｉＯ2膜をＣＶＤ法により成膜した。次いで、主膜ドナー基板１３ＤのＳｉＯ2膜が成膜された側から水素のイオンＩを注入して、主膜ドナー基板１３Ｄの主面１３ｎから内部に０．３μｍの深さの位置の面にイオン注入領域１３ｉを形成した。次いで、上記の厚さ１μｍのＳｉＯ2膜を研磨することにより、厚さ０．５μｍのＳｉＯ2膜だけ残存させて、主面１２ｂｎが鏡面化された接合膜１２ｂを形成した。 Referring to (A2) in FIG. 4A, a GaN substrate having a diameter of 6 inches (15.24 cm) and a thickness of 5 cm grown by the HVPE method was prepared as main film donor substrate 13D. A SiO 2 film having a thickness of 1 μm was formed on the main surface 13n on the (000-1) plane side which is the N atomic plane of the main film donor substrate 13D by the CVD method. Next, hydrogen ions I are implanted from the side of the main film donor substrate 13D on which the SiO 2 film is formed, so that the surface of the main film donor substrate 13D has a depth of 0.3 μm inside from the main surface 13n. An ion implantation region 13i was formed. Subsequently, the SiO 2 film having a thickness of 1 μm was polished to leave only the SiO 2 film having a thickness of 0.5 μm, thereby forming a bonding film 12b in which the main surface 12bn was mirror-finished.
　次に、図４（Ａ）中の（Ａ３）を参照して、支持基板１１である支持基板ＳＲ１、Ｓ１～Ｓ２５のそれぞれに形成された接合膜１２ａの主面１２ａｍおよび主膜ドナー基板１３ＤであるＧａＮ基板上に形成された接合膜１２ｂの主面１２ｂｎをアルゴンプラズマにより清浄化および活性化させた後、接合膜１２ａの主面１２ａｍと接合膜１２ｂの主面１２ｂｎとを貼り合わせて、窒素雰囲気下３００℃で２時間熱処理した。このようにして、支持基板１１とイオン注入領域１３ｉが形成された主膜ドナー基板１３Ｄとが接合膜１２を介在させて貼り合わされた接合基板１Ｌが得られた。 Next, referring to (A3) in FIG. 4A, the main surface 12am of the bonding film 12a and the main film donor substrate 13D formed on each of the support substrates SR1, S1 to S25, which are the support substrates 11, are used. After cleaning and activating the main surface 12bn of the bonding film 12b formed on a certain GaN substrate with argon plasma, the main surface 12am of the bonding film 12a and the main surface 12bn of the bonding film 12b are bonded together to form nitrogen. Heat treatment was performed at 300 ° C. for 2 hours in an atmosphere. In this manner, a bonded substrate 1L was obtained in which the support substrate 11 and the main film donor substrate 13D on which the ion implantation region 13i was formed were bonded together with the bonding film 12 interposed therebetween.
　次に、図４（Ｂ）を参照して、接合基板１Ｌをさらに８００℃に加熱することにより、主膜ドナー基板１３Ｄのイオン注入領域１３ｉの水素のイオンＩをガス化させて急激な体積膨張をさせ、主膜ドナー基板１３Ｄをイオン注入領域１３ｉで分離した。次いで、分離面を研磨により鏡面化した。 Next, referring to FIG. 4B, the bonding substrate 1L is further heated to 800 ° C., whereby hydrogen ions I in the ion implantation region 13i of the main film donor substrate 13D are gasified to cause rapid volume expansion. The main film donor substrate 13D was separated by the ion implantation region 13i. Next, the separation surface was mirror-finished by polishing.
　こうして、図７（Ａ）に示すような支持基板１１である支持基板ＳＲ１、Ｓ１～Ｓ２５のそれぞれの主面１１ｍ側に主膜１３である主面１３ｍが鏡面化された厚さ０．２μｍのＧａＮ膜が配置された複合基板１である複合基板ＳＲ１、Ｓ１～Ｓ２５が得られた。 In this way, the main surface 13m as the main film 13 is mirror-finished on the main surface 11m side of each of the support substrates SR1 and S1 to S25 as the support substrate 11 as shown in FIG. Composite substrates SR1 and S1 to S25, which are composite substrates 1 on which GaN films are arranged, were obtained.
　３．半導体層の形成工程
　図７（Ｂ）を参照して、複合基板１である複合基板ＳＲ１、Ｓ１～Ｓ２５の主膜１３であるＧａＮ膜の主面１３ｍ（かかる主面はＧａ原子面である（０００１）面である。）上に、それぞれＭＯＣＶＤ法により半導体層２０としてＧａＮ層を成長させた。かかる半導体層２０の成長においては、まず、５００℃で、半導体バッファ層２１として厚さ０．１μｍのＧａＮバッファ層を成長させ、次いで、１０５０℃で、半導体結晶層２３として厚さ５μｍのＧａＮ結晶層を成長させた。こうして、２６種類の半導体層付複合基板ＳＲ１、Ｓ１～Ｓ２５が得られた。 3. Step of Forming Semiconductor Layer Referring to FIG. 7B, the main surface 13m of the GaN film that is the main film 13 of the composite substrate SR1 and S1 to S25 that are the composite substrate 1 (the main surface is a Ga atomic surface ( A GaN layer was grown as the semiconductor layer 20 by MOCVD. In the growth of the semiconductor layer 20, first, a GaN buffer layer having a thickness of 0.1 μm is grown as the semiconductor buffer layer 21 at 500 ° C., and then a GaN crystal having a thickness of 5 μm as the semiconductor crystal layer 23 at 1050 ° C. Growing layers. In this way, 26 types of composite substrates SR1, S1 to S25 with semiconductor layers were obtained.
　４．支持基板の除去
　図７（Ｃ）を参照して、得られた半導体層付複合基板ＳＲ１、Ｓ１～Ｓ２５を室温（２５℃）で５０質量％のフッ化水素酸水溶液中に浸漬することにより、支持基板１１をエッチングにより除去して２６種類の半導体ウエハＳＲ１、Ｓ１～Ｓ２５が得られた。半導体層付複合基板ＳＲ１、Ｓ１～Ｓ２５について、それぞれの支持基板１１の除去時間を表１にまとめた。 4). Removal of Support Substrate Referring to FIG. 7C, the obtained composite substrate with semiconductor layer SR1, S1 to S25 is immersed in a 50% by mass hydrofluoric acid aqueous solution at room temperature (25 ° C.). The support substrate 11 was removed by etching to obtain 26 types of semiconductor wafers SR1, S1 to S25. Table 1 summarizes the removal time of each support substrate 11 for the composite substrates SR1 and S1 to S25 with semiconductor layers.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　表１を参照して、ＭＡｌ2Ｓｉ2Ｏ8（Ｍは金属元素）結晶相が含まれていなかった半導体層付複合基板ＳＲ１の支持基板１１の除去時間は１２０分と長かったのに対し、ＭＡｌ2Ｓｉ2Ｏ8結晶相が含まれていた半導体層付複合基板Ｓ１～Ｓ２５の支持基板１１の除去時間は５分～１５分と極めて短くなり、より効率的に支持基板１１を除去することができた。 Referring to Table 1, the removal time of the support substrate 11 of the composite substrate SR1 with a semiconductor layer in which the MAl 2 Si 2 O 8 (M is a metal element) crystal phase was not included was as long as 120 minutes, The removal time of the support substrate 11 of the composite substrates with semiconductor layers S1 to S25 containing the MAl 2 Si 2 O 8 crystal phase is extremely short, 5 minutes to 15 minutes, and the support substrate 11 can be removed more efficiently. I was able to.
　（実施例２Ａ）
　表２および表３に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＣａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例１と同様にして、支持基板Ａ１～Ａ１８、複合基板Ａ１～Ａ１８、半導体層付複合基板Ａ１～Ａ１８、および半導体ウエハＡ１～Ａ１８を順次形成した。 (Example 2A)
Calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder having the stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Tables 2 and 3 are used as starting materials. A support substrate A1 to A18, a composite substrate A1 to A18, a composite substrate with a semiconductor layer A1 to A18, and a semiconductor substrate, except that a sintered body containing a CaAl 2 Si 2 O 8 crystal phase was formed, and Semiconductor wafers A1 to A18 were sequentially formed.
　支持基板Ａ１～Ａ１８の化学組成および図９に示す３成分相図上の位置、複合基板Ａ１～Ａ１８における支持基板Ａ１～Ａ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ａ１～Ａ１８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２および表３にまとめた。 The chemical composition of the supporting substrates A1 to A18 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates A1 to A18 in the composite substrates A1 to A18, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount of semiconductor layer side of composite substrate A1 to A18 with semiconductor layer, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Tables 2 and 3.
　ここで、支持基板Ａ１～Ａ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFは、室温（２５℃）から８００℃まで昇温したときの平均熱膨張係数をＴＭＡ（熱機械分析）により測定した。また、半導体層付複合基板Ａ１～Ａ１８の半導体層側の反り形状および反り量は、半導体層側の主面をＣｏｒｎｉｎｇ　Ｔｒｏｐｅｌ社のＦＭ２００ＥＷａｆｅｒを用いて観察される光干渉縞により測定した。半導体層付複合基板Ａ１～Ａ１８の半導体層のクラック本数密度は、ノマルスキー顕微鏡を用いて単位長さ当りのクラック本数を測定し、１本／ｍｍ未満を「極少」、１本／ｍｍ以上５本／ｍｍ未満を「少」、５本／ｍｍ以上１０本／ｍｍ未満を「多」、１０本／ｍｍ以上を「極多」と評価した。半導体層付複合基板Ａ１～Ａ１８の半導体層の転位密度は、ＣＬ（カソードルミネッセンス）による暗点の単位面積当たりの個数を測定した。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ａ１～Ａ１８から支持基板Ａ１～Ａ１８をそれぞれ除去した半導体ウエハＡ１～Ａ１８における反りの大小関係には、半導体層付複合基板Ａ１～Ａ１８における大小関係が維持されていた。 Here, the thermal expansion coefficient α S in the main surface of the support substrates A1 to A18 and the thermal expansion coefficient α F in the main surface of the main film are the average thermal expansion when the temperature is raised from room temperature (25 ° C.) to 800 ° C. The coefficient was measured by TMA (thermomechanical analysis). Further, the warp shape and the warp amount on the semiconductor layer side of each of the composite substrates with semiconductor layers A1 to A18 were measured by optical interference fringes observed on the main surface on the semiconductor layer side using FM200EWafer manufactured by Corning Tropel. The number of cracks in the semiconductor layers of the composite substrates with semiconductor layers A1 to A18 is determined by measuring the number of cracks per unit length using a Nomarski microscope. / Mm or less was evaluated as “small”, 5 / mm or more and less than 10 / mm as “many”, and 10 / mm or more as “very many”. The dislocation density of the semiconductor layers of the composite substrates with semiconductor layers A1 to A18 was measured by the number of dark spots per unit area by CL (cathode luminescence). In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers A1 to A18 obtained by removing the support substrates A1 to A18 from the composite substrates with semiconductor layers A1 to A18, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers A1 to A18.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
　（実施例２Ｂ）
　表４および表５に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ａと同様にして、支持基板Ｂ１～Ｂ２０、複合基板Ｂ１～Ｂ２０、半導体層付複合基板Ｂ１～Ｂ２０、および半導体ウエハＢ１～Ｂ２０を順次形成した。 (Example 2B)
Starting from the stoichiometric ratio of strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required for forming the chemical composition of the support substrate shown in Tables 4 and 5 Except for forming a sintered body containing a SrAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2A, support substrates B1 to B20, composite substrates B1 to B20, composite substrates with semiconductor layers B1 to B20, and Semiconductor wafers B1 to B20 were sequentially formed.
　支持基板Ｂ１～Ｂ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｂ１～Ｂ２０における支持基板Ｂ１～Ｂ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｂ１～Ｂ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表４および表５にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｂ１～Ｂ２０から支持基板Ｂ１～Ｂ２０をそれぞれ除去した半導体ウエハＢ１～Ｂ２０における反りの大小関係には、半導体層付複合基板Ｂ１～Ｂ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates B1 to B20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates B1 to B20 in the composite substrates B1 to B20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warp shape and warp amount of semiconductor layer side of composite substrate with semiconductor layer B1 to B20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Tables 4 and 5. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers B1 to B20 obtained by removing the supporting substrates B1 to B20 from the composite substrates with semiconductor layers B1 to B20, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers B1 to B20.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
　（実施例２Ｃ）
　表６および表７に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ａと同様にして、支持基板Ｃ１～Ｃ２０、複合基板Ｃ１～Ｃ２０、半導体層付複合基板Ｃ１～Ｃ２０、および半導体ウエハＣ１～Ｃ２０を順次形成した。 (Example 2C)
Starting from the stoichiometric ratios of barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required to form the chemical composition of the support substrate shown in Tables 6 and 7 Except for forming a sintered body containing a BaAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2A, support substrates C1 to C20, composite substrates C1 to C20, composite substrates with semiconductor layers C1 to C20, and Semiconductor wafers C1 to C20 were sequentially formed.
　支持基板Ｃ１～Ｃ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｃ１～Ｃ２０における支持基板Ｃ１～Ｃ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｃ１～Ｃ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表６および表７にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｃ１～Ｃ２０から支持基板Ｃ１～Ｃ２０をそれぞれ除去した半導体ウエハＣ１～Ｃ２０における反りの大小関係には、半導体層付複合基板Ｃ１～Ｃ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates C1 to C20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates C1 to C20 in the composite substrates C1 to C20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount on the semiconductor layer side of composite substrate with semiconductor layer C1 to C20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Tables 6 and 7. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers C1 to C20 obtained by removing the supporting substrates C1 to C20 from the composite substrates C1 to C20 with the semiconductor layer, respectively, maintained the magnitude relationship in the composite substrates C1 to C20 with the semiconductor layer.
Figure JPOXMLDOC01-appb-T000006
Figure JPOXMLDOC01-appb-T000006
Figure JPOXMLDOC01-appb-T000007
Figure JPOXMLDOC01-appb-T000007
　（実施例２Ｄ）
　表８に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＣａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと、主膜としてＡｌＮ膜を形成し、半導体層としてＡｌＮ層を形成した以外は、実施例２Ａと同様にして、支持基板Ｄ１～Ｄ８、複合基板Ｄ１～Ｄ８、半導体層付複合基板Ｄ１～Ｄ８、および半導体ウエハＤ１～Ｄ８を順次形成した。 (Example 2D)
CaAl 2 Si using as starting materials calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Table 8 Supporting substrates D1 to D8, composites were formed in the same manner as in Example 2A, except that a sintered body containing a 2 O 8 crystal phase was formed, an AlN film was formed as a main film, and an AlN layer was formed as a semiconductor layer. Substrates D1 to D8, composite substrates with semiconductor layers D1 to D8, and semiconductor wafers D1 to D8 were sequentially formed.
　支持基板Ｄ１～Ｄ８の化学組成および図９に示す３成分相図上の位置、複合基板Ｄ１～Ｄ８における支持基板Ｄ１～Ｄ８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｄ１～Ｄ８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表８にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｄ１～Ｄ８から支持基板Ｄ１～Ｄ８をそれぞれ除去した半導体ウエハＤ１～Ｄ８における反りの大小関係には、半導体層付複合基板Ｄ１～Ｄ８における大小関係が維持されていた。 The chemical composition of the support substrates D1 to D8 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates D1 to D8 in the composite substrates D1 to D8, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount on the semiconductor layer side of the composite substrate D1-D8 with semiconductor layer, crack number density of the semiconductor layer, and semiconductor The dislocation density of the layers is summarized in Table 8. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers D1 to D8 obtained by removing the supporting substrates D1 to D8 from the composite substrates with semiconductor layers D1 to D8, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers D1 to D8.
Figure JPOXMLDOC01-appb-T000008
Figure JPOXMLDOC01-appb-T000008
　（実施例２Ｅ）
　表９および表１０に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｄと同様にして、支持基板Ｅ１～Ｅ１６、複合基板Ｅ１～Ｅ１６、半導体層付複合基板Ｅ１～Ｅ１６、および半導体ウエハＥ１～Ｅ１６を順次形成した。 (Example 2E)
The starting materials are strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder of the stoichiometric ratio necessary for forming the chemical composition of the support substrate shown in Table 9 and Table 10. Except that a sintered body containing a SrAl 2 Si 2 O 8 crystal phase was formed, in the same manner as in Example 2D, the supporting substrates E1 to E16, the composite substrates E1 to E16, the composite substrates with semiconductor layers E1 to E16, and Semiconductor wafers E1 to E16 were sequentially formed.
　支持基板Ｅ１～Ｅ１６の化学組成および図９に示す３成分相図上の位置、複合基板Ｅ１～Ｅ１６における支持基板Ｅ１～Ｅ１６の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｅ１～Ｅ１６の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表９および表１０にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｅ１～Ｅ１６から支持基板Ｅ１～Ｅ１６をそれぞれ除去した半導体ウエハＥ１～Ｅ１６における反りの大小関係には、半導体層付複合基板Ｅ１～Ｅ１６における大小関係が維持されていた。 The chemical composition of the supporting substrates E1 to E16 and the position on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates E1 to E16 in the composite substrates E1 to E16, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warp shape and warp amount of semiconductor layer side of composite substrate E1-E16 with semiconductor layer, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 9 and Table 10. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers E1 to E16 obtained by removing the supporting substrates E1 to E16 from the composite substrates E1 to E16 with the semiconductor layer, respectively, maintained the magnitude relationship in the composite substrates E1 to E16 with the semiconductor layer.
Figure JPOXMLDOC01-appb-T000009
Figure JPOXMLDOC01-appb-T000009
Figure JPOXMLDOC01-appb-T000010
Figure JPOXMLDOC01-appb-T000010
　（実施例２Ｆ）
　表１１および表１２に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｄと同様にして、支持基板Ｆ１～Ｆ２０、複合基板Ｆ１～Ｆ２０、半導体層付複合基板Ｆ１～Ｆ２０、および半導体ウエハＦ１～Ｆ２０を順次形成した。 (Example 2F)
The starting materials are barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in the stoichiometric ratio necessary for forming the chemical composition of the support substrate shown in Table 11 and Table 12. Except for forming a sintered body containing a BaAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2D, the supporting substrates F1 to F20, the composite substrates F1 to F20, the composite substrates with semiconductor layers F1 to F20, and Semiconductor wafers F1 to F20 were sequentially formed.
　支持基板Ｆ１～Ｆ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｆ１～Ｆ２０における支持基板Ｆ１～Ｆ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｆ１～Ｆ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表１１および表１２にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｆ１～Ｆ２０から支持基板Ｆ１～Ｆ２０をそれぞれ除去した半導体ウエハＦ１～Ｆ２０における反りの大小関係には、半導体層付複合基板Ｆ１～Ｆ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates F1 to F20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates F1 to F20 in the composite substrates F1 to F20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount of semiconductor layer side of composite substrate with semiconductor layer F1 to F20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Tables 11 and 12. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relation of the warpage in the semiconductor wafers F1 to F20 obtained by removing the supporting substrates F1 to F20 from the composite substrates with semiconductor layers F1 to F20, respectively, was maintained in the magnitude relation in the composite substrates with semiconductor layers F1 to F20.
Figure JPOXMLDOC01-appb-T000011
Figure JPOXMLDOC01-appb-T000011
Figure JPOXMLDOC01-appb-T000012
Figure JPOXMLDOC01-appb-T000012
　（実施例２Ｇ）
　表１３および表１４に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＣａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと、主膜としてＧａＡｓ膜を形成し、半導体層としてＧａＡｓ層を形成した以外は、実施例２Ａと同様にして、支持基板Ｇ１～Ｇ１８、複合基板Ｇ１～Ｇ１８、半導体層付複合基板Ｇ１～Ｇ１８、および半導体ウエハＧ１～Ｇ１８を順次形成した。 (Example 2G)
Calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder having stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Table 13 and Table 14 are used as starting materials. The support substrates G1 to G2 were formed in the same manner as in Example 2A, except that a sintered body containing a CaAl 2 Si 2 O 8 crystal phase was formed, a GaAs film was formed as a main film, and a GaAs layer was formed as a semiconductor layer. G18, composite substrates G1 to G18, composite substrates with semiconductor layers G1 to G18, and semiconductor wafers G1 to G18 were sequentially formed.
　支持基板Ｇ１～Ｇ１８の化学組成および図９に示す３成分相図上の位置、複合基板Ｇ１～Ｇ１８における支持基板Ｇ１～Ｇ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｇ１～Ｇ１８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表１３および表１４にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｇ１～Ｇ１８から支持基板Ｇ１～Ｇ１８をそれぞれ除去した半導体ウエハＧ１～Ｇ１８における反りの大小関係には、半導体層付複合基板Ｇ１～Ｇ１８における大小関係が維持されていた。 The chemical composition of the support substrates G1 to G18 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates G1 to G18 in the composite substrates G1 to G18, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount on the semiconductor layer side of the composite substrate G1 to G18 with semiconductor layer, crack number density of the semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 13 and Table 14. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers G1 to G18 obtained by removing the support substrates G1 to G18 from the composite substrates with semiconductor layers G1 to G18, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers G1 to G18.
Figure JPOXMLDOC01-appb-T000013
Figure JPOXMLDOC01-appb-T000013
Figure JPOXMLDOC01-appb-T000014
Figure JPOXMLDOC01-appb-T000014
　（実施例２Ｈ）
　表１５および表１６に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｇと同様にして、支持基板Ｈ１～Ｈ２０、複合基板Ｈ１～Ｈ２０、半導体層付複合基板Ｈ１～Ｈ２０、および半導体ウエハＨ１～Ｈ２０を順次形成した。 (Example 2H)
The starting materials are strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in the stoichiometric ratio necessary for forming the chemical composition of the support substrate shown in Table 15 and Table 16. Except for forming a sintered body containing a SrAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2G, the supporting substrates H1 to H20, the composite substrates H1 to H20, the composite substrates with semiconductor layers H1 to H20, and Semiconductor wafers H1 to H20 were sequentially formed.
　支持基板Ｈ１～Ｈ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｈ１～Ｈ２０における支持基板Ｈ１～Ｈ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｈ１～Ｈ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表１５および表１６にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｈ１～Ｈ２０から支持基板Ｈ１～Ｈ２０をそれぞれ除去した半導体ウエハＨ１～Ｈ２０における反りの大小関係には、半導体層付複合基板Ｈ１～Ｈ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates H1 to H20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates H1 to H20 in the composite substrates H1 to H20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount of semiconductor layer-side composite substrates H1 to H20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 15 and Table 16. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers H1 to H20 obtained by removing the supporting substrates H1 to H20 from the composite substrates with semiconductor layers H1 to H20, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers H1 to H20.
Figure JPOXMLDOC01-appb-T000015
Figure JPOXMLDOC01-appb-T000015
Figure JPOXMLDOC01-appb-T000016
Figure JPOXMLDOC01-appb-T000016
　（実施例２Ｉ）
　表１７および表１８に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｇと同様にして、支持基板Ｉ１～Ｉ２０、複合基板Ｉ１～Ｉ２０、半導体層付複合基板Ｉ１～Ｉ２０、および半導体ウエハＩ１～Ｉ２０を順次形成した。 Example 2I
Starting from the stoichiometric ratios of barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required to form the chemical composition of the support substrate shown in Table 17 and Table 18. Except that a sintered body containing a BaAl 2 Si 2 O 8 crystal phase was formed, in the same manner as in Example 2G, the supporting substrates I1 to I20, the composite substrates I1 to I20, the composite substrates with semiconductor layers I1 to I20, and Semiconductor wafers I1 to I20 were sequentially formed.
　支持基板Ｉ１～Ｉ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｉ１～Ｉ２０における支持基板Ｉ１～Ｉ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｉ１～Ｉ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表１７および表１８にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｉ１～Ｉ２０から支持基板Ｉ１～Ｉ２０をそれぞれ除去した半導体ウエハＩ１～Ｉ２０における反りの大小関係には、半導体層付複合基板Ｉ１～Ｉ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates I1 to I20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates I1 to I20 in the composite substrates I1 to I20, and the main surface of the main film The ratio of the thermal expansion coefficient α S to the thermal expansion coefficient α F (α S / α F ratio), the warp shape and warpage amount of the semiconductor layer-side composite substrates I1 to I20, the number of cracks in the semiconductor layer, and the semiconductor The dislocation densities of the layers are summarized in Table 17 and Table 18. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers I1 to I20 obtained by removing the supporting substrates I1 to I20 from the composite substrates with semiconductor layers I1 to I20, respectively, was maintained in the composite substrates with semiconductor layers I1 to I20.
Figure JPOXMLDOC01-appb-T000017
Figure JPOXMLDOC01-appb-T000017
Figure JPOXMLDOC01-appb-T000018
Figure JPOXMLDOC01-appb-T000018
　（実施例２Ｊ）
　表１９および表２０に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＣａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと、主膜としてＩｎＰ膜を形成し、半導体層としてＩｎＰ層を形成した以外は、実施例２Ａと同様にして、支持基板Ｊ１～Ｊ１２、複合基板Ｊ１～Ｊ１２、半導体層付複合基板Ｊ１～Ｊ１２、および半導体ウエハＪ１～Ｊ１２を順次形成した。 (Example 2J)
Calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder having stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Table 19 and Table 20 are used as starting materials. The support substrates J1 to J2 were formed in the same manner as in Example 2A, except that the sintered body containing the CaAl 2 Si 2 O 8 crystal phase was formed, the InP film was formed as the main film, and the InP layer was formed as the semiconductor layer. J12, composite substrates J1 to J12, composite substrates with semiconductor layers J1 to J12, and semiconductor wafers J1 to J12 were sequentially formed.
　支持基板Ｊ１～Ｊ１２の化学組成および図９に示す３成分相図上の位置、複合基板Ｊ１～Ｊ１２における支持基板Ｊ１～Ｊ１２の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｊ１～Ｊ１２の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表１９および表２０にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｊ１～Ｊ１２から支持基板Ｊ１～Ｊ１２をそれぞれ除去した半導体ウエハＪ１～Ｊ１２における反りの大小関係には、半導体層付複合基板Ｊ１～Ｊ１２における大小関係が維持されていた。 The chemical composition of the supporting substrates J1 to J12 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates J1 to J12 in the composite substrates J1 to J12, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount of semiconductor layer of composite substrates J1 to J12 with semiconductor layer, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 19 and Table 20. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers J1 to J12 obtained by removing the supporting substrates J1 to J12 from the composite substrates J1 to J12 with semiconductor layers, respectively, maintained the magnitude relationship in the composite substrates J1 to J12 with semiconductor layers.
Figure JPOXMLDOC01-appb-T000019
Figure JPOXMLDOC01-appb-T000019
Figure JPOXMLDOC01-appb-T000020
Figure JPOXMLDOC01-appb-T000020
　（実施例２Ｋ）
　表２１および表２２に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｊと同様にして、支持基板Ｋ１～Ｋ１８、複合基板Ｋ１～Ｋ１８、半導体層付複合基板Ｋ１～Ｋ１８、および半導体ウエハＫ１～Ｋ１８を順次形成した。 (Example 2K)
The starting materials are strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in the stoichiometric ratio necessary for forming the chemical composition of the support substrate shown in Table 21 and Table 22. Except for forming a sintered body containing a SrAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2J, support substrates K1 to K18, composite substrates K1 to K18, composite substrates with semiconductor layers K1 to K18, and Semiconductor wafers K1 to K18 were sequentially formed.
　支持基板Ｋ１～Ｋ１８の化学組成および図９に示す３成分相図上の位置、複合基板Ｋ１～Ｋ１８における支持基板Ｋ１～Ｋ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｋ１～Ｋ１８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２１および表２２にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｋ１～Ｋ１８から支持基板Ｋ１～Ｋ１８をそれぞれ除去した半導体ウエハＫ１～Ｋ１８における反りの大小関係には、半導体層付複合基板Ｋ１～Ｋ１８における大小関係が維持されていた。 The chemical composition of the support substrates K1 to K18 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates K1 to K18 in the composite substrates K1 to K18, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warp shape and warp amount of semiconductor layer side of composite substrate with semiconductor layer K1 to K18, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 21 and Table 22. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers K1 to K18 obtained by removing the supporting substrates K1 to K18 from the composite substrates with semiconductor layers K1 to K18, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers K1 to K18.
Figure JPOXMLDOC01-appb-T000021
Figure JPOXMLDOC01-appb-T000021
Figure JPOXMLDOC01-appb-T000022
Figure JPOXMLDOC01-appb-T000022
　（実施例２Ｌ）
　表２３および表２４に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｊと同様にして、支持基板Ｌ１～Ｌ２０、複合基板Ｌ１～Ｌ２０、半導体層付複合基板Ｌ１～Ｌ２０、および半導体ウエハＬ１～Ｌ２０を順次形成した。 (Example 2L)
Starting from a stoichiometric ratio of barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required to form the chemical composition of the support substrate shown in Table 23 and Table 24 Except for forming a sintered body containing a BaAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2J, support substrates L1 to L20, composite substrates L1 to L20, composite substrates with semiconductor layers L1 to L20, and Semiconductor wafers L1 to L20 were sequentially formed.
　支持基板Ｌ１～Ｌ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｌ１～Ｌ２０における支持基板Ｌ１～Ｌ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｌ１～Ｌ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２３および表２４にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｌ１～Ｌ２０から支持基板Ｌ１～Ｌ２０をそれぞれ除去した半導体ウエハＬ１～Ｌ２０における反りの大小関係には、半導体層付複合基板Ｌ１～Ｌ２０における大小関係が維持されていた。 The chemical composition of the support substrates L1 to L20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates L1 to L20 in the composite substrates L1 to L20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount of semiconductor layer of composite substrates with semiconductor layers L1 to L20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 23 and Table 24. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers L1 to L20 obtained by removing the supporting substrates L1 to L20 from the composite substrates L1 to L20 with the semiconductor layer, respectively, maintained the magnitude relationship in the composite substrates with the semiconductor layer L1 to L20.
Figure JPOXMLDOC01-appb-T000023
Figure JPOXMLDOC01-appb-T000023
Figure JPOXMLDOC01-appb-T000024
Figure JPOXMLDOC01-appb-T000024
　（実施例２Ｍ）
　表２５に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＣａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと、主膜としてＳｉＣ膜を形成し、半導体層としてＳｉＣ層を形成した以外は、実施例２Ａと同様にして、支持基板Ｍ１～Ｍ１０、複合基板Ｍ１～Ｍ１０、半導体層付複合基板Ｍ１～Ｍ１０、および半導体ウエハＭ１～Ｍ１０を順次形成した。 (Example 2M)
CaAl 2 Si using as starting materials calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Table 25 Supporting substrates M1 to M10, composites were formed in the same manner as in Example 2A, except that a sintered body containing a 2 O 8 crystal phase was formed, an SiC film was formed as a main film, and an SiC layer was formed as a semiconductor layer. Substrates M1 to M10, composite substrates with semiconductor layers M1 to M10, and semiconductor wafers M1 to M10 were sequentially formed.
　支持基板Ｍ１～Ｍ１０の化学組成および図９に示す３成分相図上の位置、複合基板Ｍ１～Ｍ１０における支持基板Ｍ１～Ｍ１０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｍ１～Ｍ１０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２５にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｍ１～Ｍ１０から支持基板Ｍ１～Ｍ１０をそれぞれ除去した半導体ウエハＭ１～Ｍ１０における反りの大小関係には、半導体層付複合基板Ｍ１～Ｍ１０における大小関係が維持されていた。 The chemical composition of the support substrates M1 to M10 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates M1 to M10 in the composite substrates M1 to M10, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and amount of warpage of semiconductor layer-side composite substrates M1 to M10, crack number density of semiconductor layer, and semiconductor The dislocation density of the layers is summarized in Table 25. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers M1 to M10 obtained by removing the supporting substrates M1 to M10 from the composite substrates with semiconductor layers M1 to M10, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers M1 to M10.
Figure JPOXMLDOC01-appb-T000025
Figure JPOXMLDOC01-appb-T000025
　（実施例２Ｎ）
　表２６および表２７に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｍと同様にして、支持基板Ｎ１～Ｎ１８、複合基板Ｎ１～Ｎ１８、半導体層付複合基板Ｎ１～Ｎ１８、および半導体ウエハＮ１～Ｎ１８を順次形成した。 (Example 2N)
Starting from the stoichiometric ratio of strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder necessary for forming the chemical composition of the support substrate shown in Table 26 and Table 27 Except for forming a sintered body containing a SrAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2M, support substrates N1 to N18, composite substrates N1 to N18, composite substrates with semiconductor layers N1 to N18, and Semiconductor wafers N1 to N18 were sequentially formed.
　支持基板Ｎ１～Ｎ１８の化学組成および図９に示す３成分相図上の位置、複合基板Ｎ１～Ｎ１８における支持基板Ｎ１～Ｎ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｎ１～Ｎ１８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２６および表２７にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｎ１～Ｎ１８から支持基板Ｎ１～Ｎ１８をそれぞれ除去した半導体ウエハＮ１～Ｎ１８における反りの大小関係には、半導体層付複合基板Ｎ１～Ｎ１８における大小関係が維持されていた。 The chemical composition of the supporting substrates N1 to N18 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates N1 to N18 in the composite substrates N1 to N18, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and amount of warpage of semiconductor layer-side composite substrates N1 to N18, number of cracks in semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 26 and Table 27. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers N1 to N18 obtained by removing the supporting substrates N1 to N18 from the composite substrates N1 to N18 with the semiconductor layer, respectively, maintained the magnitude relationship in the composite substrates N1 to N18 with the semiconductor layer.
Figure JPOXMLDOC01-appb-T000026
Figure JPOXMLDOC01-appb-T000026
Figure JPOXMLDOC01-appb-T000027
Figure JPOXMLDOC01-appb-T000027
　（実施例２Ｏ）
　表２８および表２９に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｍと同様にして、支持基板Ｏ１～Ｏ２０、複合基板Ｏ１～Ｏ２０、半導体層付複合基板Ｏ１～Ｏ２０、および半導体ウエハＯ１～Ｏ２０を順次形成した。 Example 2O
Starting from a stoichiometric ratio of barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required for forming the chemical composition of the support substrate shown in Table 28 and Table 29 Except that a sintered body containing a BaAl 2 Si 2 O 8 crystal phase was formed, in the same manner as in Example 2M, the supporting substrate O1 to O20, the composite substrate O1 to O20, the composite substrate with semiconductor layer O1 to O20, and Semiconductor wafers O1 to O20 were sequentially formed.
　支持基板Ｏ１～Ｏ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｏ１～Ｏ２０における支持基板Ｏ１～Ｏ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｏ１～Ｏ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表２８および表２９にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｏ１～Ｏ２０から支持基板Ｏ１～Ｏ２０をそれぞれ除去した半導体ウエハＯ１～Ｏ２０における反りの大小関係には、半導体層付複合基板Ｏ１～Ｏ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates O1 to O20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates O1 to O20 in the composite substrates O1 to O20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and amount of warpage of semiconductor layer-side composite substrate O1 to O20, crack number density of semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 28 and Table 29. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relation of the warpage in the semiconductor wafers O1 to O20 obtained by removing the supporting substrates O1 to O20 from the composite substrates O1 to O20 with semiconductor layers was maintained in the magnitude relation of the composite substrates with semiconductor layers O1 to O20.
Figure JPOXMLDOC01-appb-T000028
Figure JPOXMLDOC01-appb-T000028
Figure JPOXMLDOC01-appb-T000029
Figure JPOXMLDOC01-appb-T000029
　（実施例２Ｐ）
　１．支持基板の準備
　表３０および表３１に示す支持基板の化学組成の形成に必要な化学量論比の炭酸カルシウム（ＣａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料として、圧力５０ＭＰａにてプレス成型後、大気雰囲気中１５００℃で２０時間焼結した後、１６５０℃、２０００気圧で３時間ＨＩＰ（熱間等方圧プレス）焼結することにより、１８種類の焼結体Ｐ１～Ｐ１８を得た。 (Example 2P)
1. Preparation of Support Substrate Calcium carbonate (CaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder in stoichiometric ratios necessary for forming the chemical composition of the support substrate shown in Table 30 and Table 31 As a starting material, after press molding at a pressure of 50 MPa, sintering in an air atmosphere at 1500 ° C. for 20 hours, and then sintering at 1650 ° C. and 2000 atmospheres for 3 hours by HIP (hot isostatic pressing), 18 Various types of sintered bodies P1 to P18 were obtained.
　得られた１８種類の焼結体Ｐ１～Ｐ１８を、それぞれ、スライスした後主面をＪＩＳ　Ｂ０６０１に規定する算術平均粗さＲａが１ｎｍ以下に研磨することにより、図５に示す支持基板１１として直径６インチ（１５．２４ｃｍ）で厚さ４００μｍの１８種類の支持基板Ｐ１～Ｐ１８を得た。得られた１８種類の支持基板Ｐ１～Ｐ１８の化学組成、平均粒子径および図９に示す３成分相図上の位置を表３０および表３１に示した。１８種類の支持基板Ｐ１～Ｐ１８の化学組成は、Ｘ線回折により測定および同定した。表３０および表３１に示すように、支持基板Ｐ１～Ｐ１８にはＣａＡｌ2Ｓｉ2Ｏ8の結晶相が含まれていた。 The obtained 18 types of sintered bodies P1 to P18 were sliced, and the main surfaces were polished to an arithmetic average roughness Ra defined in JIS B0601 to 1 nm or less to obtain a diameter of the support substrate 11 shown in FIG. 18 kinds of support substrates P1 to P18 having a thickness of 6 inches (15.24 cm) and a thickness of 400 μm were obtained. Tables 30 and 31 show the chemical compositions, average particle diameters, and positions on the three-component phase diagram shown in FIG. 9 of the obtained 18 kinds of support substrates P1 to P18. The chemical compositions of the 18 types of support substrates P1 to P18 were measured and identified by X-ray diffraction. As shown in Tables 30 and 31, the support substrates P1 to P18 contained a crystal phase of CaAl 2 Si 2 O 8 .
　２．複合基板の作製
　図５（Ａ）中の（Ａ１）を参照して、支持基板１１である支持基板Ｐ１～Ｐ１８のそれぞれの主面１１ｍ上に厚さ１μｍのＳｉＯ2膜をＣＶＤ（化学気相堆積）法により成膜した。次いで、かかる支持基板Ｐ１～Ｐ１８のそれぞれの主面１１ｍ上の厚さ１μｍのＳｉＯ2膜を研磨することにより、厚さ０．５μｍのＳｉＯ2膜だけ残存させて、主面１２ａｍが鏡面化された接合膜１２ｂを形成した。 2. Fabrication of Composite Substrate With reference to (A1) in FIG. 5A, a SiO 2 film having a thickness of 1 μm is formed on each main surface 11m of the support substrates P1 to P18 as the support substrate 11 by CVD (chemical vapor phase). The film was formed by the deposition method. Next, by polishing the 1 μm thick SiO 2 film on the main surface 11 m of each of the supporting substrates P 1 to P 18, only the 0.5 μm thick SiO 2 film remains, and the main surface 12 am is mirrored. A bonding film 12b was formed.
　また、図５（Ａ）中の（Ａ２）を参照して、主膜ドナー基板１３Ｄとして、ＨＶＰＥ法により成長させた直径６インチ（１５．２４ｃｍ）で厚さが５ｃｍのＧａＮ基板を準備した。かかる主膜ドナー基板１３ＤのＮ原子面である（０００－１）面側の主面１３ｎ上に、厚さ１μｍのＳｉＯ2膜をＣＶＤ法により成膜した。次いで、上記の厚さ１μｍのＳｉＯ2膜を研磨することにより、厚さ０．５μｍのＳｉＯ2膜だけ残存させて、主面１２ｂｎが鏡面化された接合膜１２ｂを形成した。 Referring to (A2) in FIG. 5A, a GaN substrate having a diameter of 6 inches (15.24 cm) and a thickness of 5 cm grown by the HVPE method was prepared as main film donor substrate 13D. A SiO 2 film having a thickness of 1 μm was formed on the main surface 13n on the (000-1) plane side which is the N atomic plane of the main film donor substrate 13D by the CVD method. Subsequently, the SiO 2 film having a thickness of 1 μm was polished to leave only the SiO 2 film having a thickness of 0.5 μm, thereby forming a bonding film 12b in which the main surface 12bn was mirror-finished.
　次に、図５（Ａ）中の（Ａ３）を参照して、支持基板１１である支持基板Ｐ１～Ｐ１８のそれぞれに形成された接合膜１２ａの主面１２ａｍおよび主膜ドナー基板１３ＤであるＧａＮ基板上に形成された接合膜１２ｂの主面１２ｂｎをアルゴンプラズマにより清浄化および活性化させた後、接合膜１２ａの主面１２ａｍと接合膜１２ｂの主面１２ｂｎとを貼り合わせて、窒素雰囲気下３００℃で２時間熱処理した。このようにして、支持基板１１と主膜ドナー基板１３Ｄとが接合膜１２を介在させて貼り合わされた接合基板１Ｌが得られた。 Next, referring to (A3) in FIG. 5A, the main surface 12am of the bonding film 12a and the GaN that is the main film donor substrate 13D that are formed on each of the support substrates P1 to P18 that are the support substrates 11. The main surface 12bn of the bonding film 12b formed on the substrate is cleaned and activated by argon plasma, and then the main surface 12am of the bonding film 12a and the main surface 12bn of the bonding film 12b are bonded together in a nitrogen atmosphere. Heat treatment was performed at 300 ° C. for 2 hours. In this way, a bonded substrate 1L was obtained in which the support substrate 11 and the main film donor substrate 13D were bonded together with the bonding film 12 interposed therebetween.
　次に、図５（Ｂ）を参照して、ワイヤソーにより、主膜ドナー基板１３Ｄを、その主面１３ｎから内部に３００μｍの深さの位置の面で切断した。次いで、切断面を研削および研磨により鏡面化した。 Next, with reference to FIG. 5B, the main film donor substrate 13D was cut by a wire saw at a depth of 300 μm inside from the main surface 13n. Subsequently, the cut surface was mirror-finished by grinding and polishing.
　こうして、図７（Ａ）に示すような支持基板１１である支持基板Ｐ１～Ｐ１８のそれぞれの主面１１ｍ側に主膜１３である主面１３ｍが鏡面化された厚さ１５０μｍのＧａＮ膜が配置された複合基板１である複合基板Ｐ１～Ｐ１８が得られた。 Thus, a 150 μm-thick GaN film in which the main surface 13m as the main film 13 is mirror-finished is arranged on each main surface 11m side of the support substrates P1 to P18 as the support substrate 11 as shown in FIG. 7A. As a result, composite substrates P1 to P18, which were composite substrates 1, were obtained.
　得られた複合基板Ｐ１～Ｐ１８における支持基板Ｐ１～Ｐ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）
を表３０および表３１にまとめた。ここで、支持基板Ｐ１～Ｐ１８の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFは、実施例２Ａと同様にして測定した。 The resulting ratio of the thermal expansion coefficient alpha S for thermal expansion coefficient alpha F in the main surface of the thermal expansion coefficient alpha S and the main film in the main surface of the supporting substrate P1 ~ P18 in the composite substrate P1 ~ P18 (α S / α F ratio)
Are summarized in Table 30 and Table 31. Here, the thermal expansion coefficient α S in the main surface of the support substrates P1 to P18 and the thermal expansion coefficient α F in the main surface of the main film were measured in the same manner as in Example 2A.
　３．半導体層の形成工程
　図７（Ｂ）を参照して、複合基板１である複合基板Ｐ１～Ｐ１８の主膜１３であるＧａＮ膜の主面１３ｍ（かかる主面はＧａ原子面である（０００１）面である。）上に、それぞれＭＯＣＶＤ法により半導体層２０としてＧａＮ層を成長させた。かかる半導体層２０の成長においては、まず、５００℃で、半導体バッファ層２１として厚さ０．１μｍのＧａＮバッファ層を成長させ、次いで、１０５０℃で、半導体結晶層２３として厚さ５μｍのＧａＮ結晶層を成長させた。こうして、１８種類の半導体層付複合基板Ｐ１～Ｐ１８が得られた。 3. Step of Forming Semiconductor Layer Referring to FIG. 7B, the main surface 13m of the GaN film that is the main film 13 of the composite substrates P1 to P18 that are the composite substrate 1 (the main surface is a Ga atomic surface (0001)). A GaN layer was grown as the semiconductor layer 20 on each of them by MOCVD. In the growth of the semiconductor layer 20, first, a GaN buffer layer having a thickness of 0.1 μm is grown as the semiconductor buffer layer 21 at 500 ° C., and then a GaN crystal having a thickness of 5 μm as the semiconductor crystal layer 23 at 1050 ° C. Growing layers. In this way, 18 types of composite substrates with semiconductor layers P1 to P18 were obtained.
　得られた半導体層付複合基板Ｐ１～Ｐ１８の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表３０および表３１にまとめた。ここで、半導体層付複合基板Ｐ１～Ｐ１８の半導体層側の反り形状および反り量は、実施例２Ａと同様にして測定した。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。 Tables 30 and 31 summarize the warp shape and warp amount of the obtained semiconductor substrate with semiconductor layers P1 to P18, the number of cracks in the semiconductor layer, and the dislocation density of the semiconductor layer. Here, the warp shape and the warp amount on the semiconductor layer side of the composite substrates with semiconductor layers P1 to P18 were measured in the same manner as in Example 2A. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these.
　４．支持基板の除去
　図７（Ｃ）を参照して、得られた半導体層付複合基板Ｐ１～Ｐ１８を室温（２５℃）で５０質量％のフッ化水素酸水溶液中に浸漬することにより、支持基板１１をエッチングにより除去して１８種類の半導体ウエハＰ１～Ｐ１８が得られた。 4). Removal of Support Substrate Referring to FIG. 7C, the obtained composite substrates P1 to P18 with a semiconductor layer are immersed in a 50% by mass hydrofluoric acid aqueous solution at room temperature (25 ° C.) to thereby provide a support substrate. 11 was removed by etching, and 18 types of semiconductor wafers P1 to P18 were obtained.
　半導体層付複合基板Ｐ１～Ｐ１８から支持基板Ｐ１～Ｐ１８をそれぞれ除去した半導体ウエハＰ１～Ｐ１８における反りの大小関係には、半導体層付複合基板Ｐ１～Ｐ１８における大小関係が維持されていた。 The magnitude relationship of the warpage in the semiconductor wafers P1 to P18 obtained by removing the support substrates P1 to P18 from the composite substrates with semiconductor layers P1 to P18, respectively, was maintained in the composite substrates with semiconductor layers P1 to P18.
Figure JPOXMLDOC01-appb-T000030
Figure JPOXMLDOC01-appb-T000030
Figure JPOXMLDOC01-appb-T000031
Figure JPOXMLDOC01-appb-T000031
　（実施例２Ｑ）
　表３２および表３３に示す支持基板の化学組成の形成に必要な化学量論比の炭酸ストロンチウム（ＳｒＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＳｒＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｐと同様にして、支持基板Ｑ１～Ｑ２０、複合基板Ｑ１～Ｑ２０、半導体層付複合基板Ｑ１～Ｑ２０、および半導体ウエハＢＱ１～Ｑ２０を順次形成した。 (Example 2Q)
Starting from the stoichiometric ratio of strontium carbonate (SrCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required for forming the chemical composition of the support substrate shown in Table 32 and Table 33 Except for forming a sintered body containing a SrAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2P, support substrates Q1 to Q20, composite substrates Q1 to Q20, composite substrates with semiconductor layers Q1 to Q20, and Semiconductor wafers BQ1 to Q20 were sequentially formed.
　支持基板Ｑ１～Ｑ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｑ１～Ｑ２０における支持基板Ｑ１～Ｑ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｑ１～Ｑ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表３２および表３３にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｑ１～Ｑ２０から支持基板Ｑ１～Ｑ２０をそれぞれ除去した半導体ウエハＱ１～Ｑ２０における反りの大小関係には、半導体層付複合基板Ｑ１～Ｑ２０における大小関係が維持されていた。 The chemical composition of the support substrates Q1 to Q20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the support substrates Q1 to Q20 in the composite substrates Q1 to Q20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount on the semiconductor layer side of the composite substrate with semiconductor layer Q1 to Q20, crack number density of the semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 32 and Table 33. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relation of the warpage in the semiconductor wafers Q1 to Q20 obtained by removing the supporting substrates Q1 to Q20 from the composite substrates Q1 to Q20 with semiconductor layers, respectively, maintained the magnitude relation in the composite substrates with semiconductor layers Q1 to Q20.
Figure JPOXMLDOC01-appb-T000032
Figure JPOXMLDOC01-appb-T000032
Figure JPOXMLDOC01-appb-T000033
Figure JPOXMLDOC01-appb-T000033
　（実施例２Ｒ）
　表３４および表３５に示す支持基板の化学組成の形成に必要な化学量論比の炭酸バリウム（ＢａＣＯ3）粉末、アルミナ（Ａｌ2Ｏ3）粉末、およびシリカ（ＳｉＯ2）粉末を出発原料としてＢａＡｌ2Ｓｉ2Ｏ8結晶相を含む焼結体を形成したこと以外は、実施例２Ｐと同様にして、支持基板Ｒ１～Ｒ２０、複合基板Ｒ１～Ｒ２０、半導体層付複合基板Ｒ１～Ｒ２０、および半導体ウエハＲ１～Ｒ２０を順次形成した。 (Example 2R)
Starting from the stoichiometric ratio of barium carbonate (BaCO 3 ) powder, alumina (Al 2 O 3 ) powder, and silica (SiO 2 ) powder required to form the chemical composition of the support substrate shown in Table 34 and Table 35 Except for forming a sintered body containing a BaAl 2 Si 2 O 8 crystal phase, in the same manner as in Example 2P, support substrates R1 to R20, composite substrates R1 to R20, composite substrates with semiconductor layers R1 to R20, and Semiconductor wafers R1 to R20 were sequentially formed.
　支持基板Ｒ１～Ｒ２０の化学組成および図９に示す３成分相図上の位置、複合基板Ｒ１～Ｒ２０における支持基板Ｒ１～Ｒ２０の主面内における熱膨張係数αSおよび主膜の主面内の熱膨張係数αFに対する熱膨張係数αSの比（αS／αF比）、半導体層付複合基板Ｒ１～Ｒ２０の半導体層側の反り形状および反り量、半導体層のクラック本数密度、および半導体層の転位密度を表３４および表３５にまとめた。なお、本実施例において主膜および半導体層に発生したクラックは、これらを貫通しない微小なものであった。また、半導体層付複合基板Ｒ１～Ｒ２０から支持基板Ｒ１～Ｒ２０をそれぞれ除去した半導体ウエハＲ１～Ｒ２０における反りの大小関係には、半導体層付複合基板Ｒ１～Ｒ２０における大小関係が維持されていた。 The chemical composition of the supporting substrates R1 to R20 and the positions on the three-component phase diagram shown in FIG. 9, the thermal expansion coefficient α S in the main surface of the supporting substrates R1 to R20 in the composite substrates R1 to R20, and the main surface of the main film Ratio of thermal expansion coefficient α S to thermal expansion coefficient α F (α S / α F ratio), warpage shape and warpage amount on the semiconductor layer side of the composite substrate R1 to R20 with semiconductor layer, crack number density of the semiconductor layer, and semiconductor The dislocation densities of the layers are summarized in Table 34 and Table 35. In this example, the cracks generated in the main film and the semiconductor layer were minute ones that did not penetrate these. Further, the magnitude relationship of the warpage in the semiconductor wafers R1 to R20 obtained by removing the supporting substrates R1 to R20 from the composite substrates with semiconductor layers R1 to R20, respectively, maintained the magnitude relationship in the composite substrates with semiconductor layers R1 to R20.
Figure JPOXMLDOC01-appb-T000034
Figure JPOXMLDOC01-appb-T000034
Figure JPOXMLDOC01-appb-T000035
Figure JPOXMLDOC01-appb-T000035
　表２～表３５を参照して、実施例２Ａ～２Ｒから明らかなように、複合基板における支持基板のＭＡｌ2Ｓｉ2Ｏ8（Ｍは金属元素）の化学組成を有するアノーサイトで形成される結晶相（ＭＡｌ2Ｓｉ2Ｏ8結晶相）のモル％を調整することにより、好ましくは支持基板のＭIIＡｌ2Ｓｉ2Ｏ8結晶相、ＭIIＡｌ12Ｏ19結晶相、Ａｌ2Ｏ3結晶相、およびＡｌ6Ｓｉ2Ｏ13結晶相のモル％を調整することにより、支持基板のエッチャントに対する溶解性および熱膨張係数を好適に調整できた。 As is apparent from Examples 2A to 2R with reference to Tables 2 to 35, the support substrate in the composite substrate is formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 (M is a metal element). By adjusting the mol% of the crystal phase (MAI 2 Si 2 O 8 crystal phase), preferably the M II Al 2 Si 2 O 8 crystal phase, M II Al 12 O 19 crystal phase, Al 2 O 3 of the support substrate. By adjusting the mol% of the crystal phase and the Al 6 Si 2 O 13 crystal phase, the solubility of the support substrate in the etchant and the thermal expansion coefficient could be suitably adjusted.
　（実施例３）
　１．支持基板の準備
　実施例１と同様の出発原料および方法により、ＳｒＡｌ2Ｓｉ2Ｏ8が１５モル％およびＡｌ2Ｏ3が８５モル％の化学組成を有する焼結体Ｔを形成した。焼結体Ｔの化学組成はＸ線回折により測定および同定した。 (Example 3)
1. Preparation of Support Substrate A sintered body T having a chemical composition of 15 mol% SrAl 2 Si 2 O 8 and 85 mol% Al 2 O 3 was formed by the same starting materials and method as in Example 1. The chemical composition of the sintered body T was measured and identified by X-ray diffraction.
　得られた焼結体Ｔをスライスおよび研磨することにより、直径４インチ（１０．１６ｃｍ）で厚さ４００μｍで表３６に示すような主面の算術平均粗さＲａを有する８種類の支持基板Ｔ１～Ｔ８を形成した。ここで、表３６に示すように、支持基板Ｔ１～Ｔ８の主面の算術平均粗さＲａは、研磨条件を変化させることにより、０．５ｎｍから１００ｎｍまでの間で変化させた。支持基板のＴ１～Ｔ８の主面の算術平均粗さＲａは、ＡＦＭ（原子間力顕微鏡）により測定した。 By slicing and polishing the obtained sintered body T, eight kinds of support substrates T1 having a diameter of 4 inches (10.16 cm) and a thickness of 400 μm and an arithmetic average roughness Ra of the main surface as shown in Table 36 are shown. ~ T8 was formed. Here, as shown in Table 36, the arithmetic average roughness Ra of the main surfaces of the support substrates T1 to T8 was changed between 0.5 nm and 100 nm by changing the polishing conditions. The arithmetic average roughness Ra of the main surfaces T1 to T8 of the support substrate was measured with an AFM (atomic force microscope).
　２．複合基板の作製
　支持基板として上記の支持基板Ｔ１～Ｔ８を用いたこと、および主膜ドナー基板として直径４インチ（１０．１６ｃｍ）で厚さ２ｃｍのＧａＮ基板を用いたこと以外は、実施例１と同様にして、複合基板Ｔ１～Ｔ８を形成した。 2. Production of Composite Substrate Example 1 except that the above-mentioned support substrates T1 to T8 were used as the support substrate and a GaN substrate having a diameter of 4 inches (10.16 cm) and a thickness of 2 cm was used as the main film donor substrate. In the same manner, composite substrates T1 to T8 were formed.
　得られた複合基板Ｔ１～Ｔ８について、支持基板と主膜とが接合膜を介在させて接合している面積（以下、接合面積という）を、光学顕微鏡により測定した。複合基板の主面の面積に対する接合面積の百分率（％）を複合基板の接合面積率として算出した。結果を表３６にまとめた。 For the obtained composite substrates T1 to T8, the area where the support substrate and the main film were bonded with the bonding film interposed (hereinafter referred to as the bonding area) was measured with an optical microscope. The percentage (%) of the bonding area with respect to the area of the main surface of the composite substrate was calculated as the bonding area ratio of the composite substrate. The results are summarized in Table 36.
Figure JPOXMLDOC01-appb-T000036
Figure JPOXMLDOC01-appb-T000036
　表３６を参照して、支持基板の主面の算術平均粗さＲａを小さくすることにより、複合基板の接合面積率を高くすることができた。具体的には、支持基板の主面の算術平均粗さＲａを５０ｎｍ以下とすることにより複合基板の接合面積率を６０％以上とすることができ、支持基板の主面の算術平均粗さＲａを１０ｎｍ以下とすることにより複合基板の接合面積率を８５％以上とすることができ、支持基板の主面の算術平均粗さＲａを１ｎｍ以下とすることにより複合基板の接合面積率を９５％以上とすることができた。 Referring to Table 36, it was possible to increase the bonding area ratio of the composite substrate by reducing the arithmetic average roughness Ra of the main surface of the support substrate. Specifically, by setting the arithmetic average roughness Ra of the main surface of the support substrate to 50 nm or less, the bonding area ratio of the composite substrate can be set to 60% or more, and the arithmetic average roughness Ra of the main surface of the support substrate. By setting the thickness to 10 nm or less, the bonding area ratio of the composite substrate can be 85% or more, and by setting the arithmetic average roughness Ra of the main surface of the support substrate to 1 nm or less, the bonding area ratio of the composite substrate is 95%. That's it.
　今回開示された実施形態および実施例はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した説明でなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内のすべての変更が含まれることが意図される。 The embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　１　複合基板、１Ｌ　接合基板、２　半導体層付複合基板、３　半導体ウエハ、１１　支持基板、１１ｍ，１２ａｍ，１２ｂｎ，１３ｍ，１３ｎ，２０ｍ，２１ｍ，２３ｍ，３０ｎ　主面、１２，１２ａ，１２ｂ　接合膜、１３　主膜、１３Ｄ，１３Ｄｒ　主膜ドナー基板、１３ｉ　イオン注入領域、２０　半導体層、２１　半導体バッファ層、２３　半導体結晶層、３０　下地基板、Ｌ１　第１直線、Ｌ２　第２直線、Ｌ３　第３直線、Ｐ１　第１点、Ｐ２　第２点、Ｐ３　第３点、Ｐ４　第４点、Ｒ　領域、Ｒ１　第１領域、Ｒ２　第２領域。 1 composite substrate, 1L bonding substrate, 2 composite substrate with semiconductor layer, 3 semiconductor wafer, 11 support substrate, 11m, 12am, 12bn, 13m, 13n, 20m, 21m, 23m, 30n main surface, 12, 12a, 12b bonding film , 13 main film, 13D, 13Dr main film donor substrate, 13i ion implantation region, 20 semiconductor layer, 21 semiconductor buffer layer, 23 semiconductor crystal layer, 30 base substrate, L1 first straight line, L2 second straight line, L3 third straight line , P1 first point, P2 second point, P3 third point, P4 fourth point, R region, R1 first region, R2 second region.

Claims (10)

  1. 　金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶
    相を含む支持基板と、前記支持基板の主面側に配置されている主膜と、を含む複合基板。     A composite substrate including a support substrate including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including a metal element M, and a main film disposed on the main surface side of the support substrate .
  2. 　前記金属元素Ｍがアルカリ土類金属元素ＭIIである請求項１に記載の複合基板。 The composite substrate according to claim 1, wherein the metal element M is an alkaline earth metal element M II.
  3. 　前記アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、前記支持基板の化学組成が、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点、ＭIIＡｌ12Ｏ19の化学組成を示す第２点、Ａｌ2Ｏ3の化学組成を示す第３点、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点、および前記第１点をこの順に直線で結んで形成される領域内の点で示される請求項２に記載の複合基板。 The alkaline earth metal element M II contains at least one element selected from the group consisting of Ca, Sr and Ba, and the chemical composition of the supporting substrate is M II O—Al 2 O 3 —SiO 2 -based 3 In the component phase diagram, the first point indicating the chemical composition of M II Al 2 Si 2 O 8 , the second point indicating the chemical composition of M II Al 12 O 19 , the third point indicating the chemical composition of Al 2 O 3 , 4. The composite substrate according to claim 2, which is indicated by a fourth point indicating the chemical composition of Al 6 Si 2 O 13 and a point in a region formed by connecting the first point in this order with a straight line.
  4. 　前記支持基板の少なくとも一部が酸に溶解する請求項１から請求項３のいずれかに記載の複合基板。 4. The composite substrate according to claim 1, wherein at least a part of the support substrate is dissolved in an acid.
  5. 　前記支持基板の主面内の熱膨張係数が、主膜の主面内の熱膨張係数に比べて、０．８倍以上１．２倍以下である請求項１から請求項４のいずれかに記載の複合基板。 5. The thermal expansion coefficient in the main surface of the support substrate is 0.8 to 1.2 times the thermal expansion coefficient in the main surface of the main film. The composite substrate described.
  6. 　金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含む支持基板と、前記支持基板の主面側に配置されている主膜と、を含む複合基板を準備する工程と、
    　前記複合基板の前記主膜上に、少なくとも１層の半導体層を成長させることにより、半導体層付複合基板を得る工程と、
    　前記半導体層付複合基板から前記支持基板を除去することにより、前記半導体層を含む半導体ウエハを得る工程と、を含む半導体ウエハの製造方法。     A composite substrate including a support substrate including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 including a metal element M, and a main film disposed on the main surface side of the support substrate The process of preparing
    Obtaining a composite substrate with a semiconductor layer by growing at least one semiconductor layer on the main film of the composite substrate;
    Removing the support substrate from the composite substrate with a semiconductor layer to obtain a semiconductor wafer including the semiconductor layer.
  7. 　金属元素Ｍを含むＭＡｌ2Ｓｉ2Ｏ8の化学組成を有するアノーサイトで形成される結晶相を含み、直径が３インチ以上で、主面の算術平均粗さＲａが５０ｎｍ以下である複合基板用の支持基板。 For a composite substrate including a crystal phase formed of anorthite having a chemical composition of MAl 2 Si 2 O 8 containing a metal element M, having a diameter of 3 inches or more and an arithmetic average roughness Ra of a main surface of 50 nm or less Support substrate.
  8. 　前記金属元素Ｍがアルカリ土類金属元素ＭIIである請求項７に記載の複合基板用の支持基板。 Supporting substrate for a composite substrate according to claim 7 wherein the metal element M is an alkaline earth metal element M II.
  9. 　前記アルカリ土類金属元素ＭIIがＣａ、ＳｒおよびＢａからなる群から選ばれる少なくとも１種類の元素を含み、前記支持基板の化学組成が、ＭIIＯ－Ａｌ2Ｏ3－ＳｉＯ2系の３成分相図において、ＭIIＡｌ2Ｓｉ2Ｏ8の化学組成を示す第１点、ＭIIＡｌ12Ｏ19の化学組成を示す第２点、Ａｌ2Ｏ3の化学組成を示す第３点、およびＡｌ6Ｓｉ2Ｏ13の化学組成を示す第４点、および前記第１点をこの順に直線で結んで形成される領域内の点で示される請求項８に記載の複合基板用の支持基板。 The alkaline earth metal element M II contains at least one element selected from the group consisting of Ca, Sr and Ba, and the chemical composition of the supporting substrate is M II O—Al 2 O 3 —SiO 2 -based 3 In the component phase diagram, the first point indicating the chemical composition of M II Al 2 Si 2 O 8 , the second point indicating the chemical composition of M II Al 12 O 19 , the third point indicating the chemical composition of Al 2 O 3 , The support substrate for a composite substrate according to claim 8, which is indicated by a fourth point indicating the chemical composition of Al 6 Si 2 O 13 and a point in a region formed by connecting the first point in this order with a straight line. .
  10. 　少なくとも一部が酸に溶解する請求項７から請求項９のいずれかに記載の複合基板用の支持基板。 The support substrate for a composite substrate according to any one of claims 7 to 9, wherein at least a part thereof is dissolved in an acid.
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