WO2014136562A1 - Particules ultrafines de semi-conducteur à composé, couche mince à particules ultrafines, et dispositif de conversion photoélectrique - Google Patents

Particules ultrafines de semi-conducteur à composé, couche mince à particules ultrafines, et dispositif de conversion photoélectrique Download PDF

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WO2014136562A1
WO2014136562A1 PCT/JP2014/053716 JP2014053716W WO2014136562A1 WO 2014136562 A1 WO2014136562 A1 WO 2014136562A1 JP 2014053716 W JP2014053716 W JP 2014053716W WO 2014136562 A1 WO2014136562 A1 WO 2014136562A1
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component
photoelectric conversion
compound semiconductor
thin film
ultrafine particle
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PCT/JP2014/053716
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Japanese (ja)
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鳥本　司
弘泰 西
紀一 藤平
村山　浩二
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株式会社村田製作所
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to a compound semiconductor ultrafine particle, an ultrafine particle thin film, and a photoelectric conversion device, and more specifically, a CZTS-based compound semiconductor ultrafine particle represented by the general formula (Cu, Zn, Sn) S x , and the semiconductor compound ultrafine particle.
  • the present invention relates to a used ultrafine particle thin film and a photoelectric conversion device such as a solar cell in which a light absorption layer is formed by the ultrafine particle thin film.
  • Compound semiconductors containing elements belonging to the categories of Groups I, II, IV, and VI have a wide absorption band from the visible light region to the near-infrared light region, and are composed of inexpensive and low environmental impact elements. Therefore, it attracts attention as a new photoelectric conversion material.
  • CZTS-based compound semiconductors made of a sulfide composition mainly composed of a Cu component, a Zn component, and an Sn component do not contain a rare element such as In or a harmful element such as Cd.
  • Low cost and environmental friendly since the band gap energy Eg is 1.4 to 1.5 eV and the light absorption coefficient ⁇ is a direct transition semiconductor having an order of 10 4 cm ⁇ 1 , the wavelength range from the visible region to the near infrared region In addition, it has a high absorption capacity and can be expected to emit light in a wavelength range corresponding to the band gap energy.
  • this CZTS compound semiconductor functions as a p-type semiconductor
  • various sensors such as solar cells, photosensors, image sensors, etc.
  • photoelectric conversion is used to cause electrolysis to generate hydrogen. It is considered promising as a material for various photoelectric conversion devices such as a hydrogen production apparatus.
  • Cu, Zn, and Sn are the main components, the Cu / (Zn + Sn) ratio and the Zn / Sn ratio (both atomic ratios) are x and y, respectively, and the composition is (x, y).
  • (x, y) is A (0.78, 1.32), B (0.86, 1.32), C (0.86, 1.28), D (0. 90, 1.23), E (0.90, 1.18), and F (0.78, 1.28) are connected in the order of A ⁇ B ⁇ C ⁇ D ⁇ E ⁇ F ⁇ A.
  • Sulfides have been proposed that lie on a straight line or inside a region surrounded by each straight line.
  • JP 2010-215497 A (Claim 1, paragraph number [0011])
  • IPCE i / ⁇ (1 ′)
  • ⁇ is the number of photons incident at a specific wavelength
  • i is the number of electrons flowing in the external circuit. That is, the photoelectric conversion efficiency IPCE indicates the conversion ratio of the number of photons incident at a specific wavelength to electrons, and serves as an index of photoelectric conversion characteristics.
  • Patent Document 1 since the characteristics are not evaluated by the photoelectric conversion efficiency IPCE, it is unclear whether the composition range is suitable for application to various photoelectric conversion devices even if a good energy conversion efficiency Eff is obtained. It is.
  • the present invention has been made in view of such circumstances, and is a CZTS-based compound semiconductor ultrafine particle having a photoelectric conversion characteristic suitable for application to various photoelectric conversion devices, and an ultrafine particle thin film using the semiconductor compound ultrafine particle. And it aims at providing the photoelectric conversion device which formed the light absorption layer with this ultrafine particle thin film.
  • the present inventors conducted extensive research on CZTS-based semiconductor compounds, and among the Cu component, Zn component, and Sn component that form cations, the composition ratio x of the Cu component with respect to the total of the Zn component and the Sn component, and When the combination of the composition ratio y of the Zn component with respect to the Sn component is in a specific region different from that of Patent Document 1, it is possible to obtain a good photoelectric conversion efficiency IPCE, and thereby a compound semiconductor ultrafine particle having good photoelectric conversion characteristics. The knowledge that can be obtained.
  • the compound semiconductor ultrafine particles according to the present invention are composed of a sulfide mainly composed of a Cu component, a Zn component, and an Sn component, and the Zn component and the above-mentioned
  • a sulfide mainly composed of a Cu component, a Zn component, and an Sn component
  • the Zn component and the above-mentioned When the composition ratio of the Cu component to the total Sn component is x and the composition ratio of the Zn component to the Sn component is y, (x, y) is A (0.75, 1.04), B ( 0.85, 0.86), C (0.92, 0.79), and D (1.00, 0.72).
  • the compound semiconductor ultrafine particles of the present invention preferably have an average particle size of less than 5 nm.
  • the ultrafine particle film according to the present invention is characterized in that a dispersion solution in which the above compound semiconductor ultrafine particles are dispersed in a solvent is applied.
  • the compound semiconductor ultrafine particles have good photoelectric conversion characteristics, and an ultrafine particle thin film that can be applied to various photoelectric conversion devices can be obtained.
  • the compound semiconductor ultrafine particles have an average particle size of less than 5 nm, the quantum size effect can be exhibited. Therefore, even for CZTS compound semiconductors with the same composition, the light absorption and emission wavelengths can be efficiently and broadly spread. It becomes possible to control to.
  • the photoelectric conversion device is characterized in that the light absorption layer is formed of the ultrafine particle thin film.
  • the compound semiconductor ultrafine particle of the present invention is composed of a sulfide mainly composed of a Cu component, a Zn component, and a Sn component, and the composition ratio of the Cu component to the total of the Zn component and the Sn component is x,
  • the composition ratio of the Zn component to the Sn component is y
  • (x, y) is A (0.75, 1.04), B (0.85, 0.86), C (0.92, 0.79) and D (1.00, 0.72)
  • D (1.00, 0.72)
  • Compound semiconductor fine particles can be obtained.
  • the ultrafine particle thin film of the present invention since the dispersion solution in which the compound semiconductor ultrafine particles are dispersed in a solvent is applied, the ultrafine particle thin film having good photoelectric conversion characteristics and applicable to various photoelectric conversion devices. Can be obtained.
  • the photoelectric conversion device of the present invention since the light absorption layer is formed of the ultrafine particle thin film, it is possible to realize various photoelectric conversion devices having good photoelectric conversion characteristics.
  • the compound semiconductor ultrafine particles have an average particle size of less than 5 nm, the quantum size effect can be exhibited. Therefore, while using the CZTS compound semiconductor having the same composition, the light absorption / emission wavelength can be increased.
  • Various photoelectric conversion devices that can be efficiently and widely controlled can be obtained.
  • the semiconductor compound ultrafine particles as one embodiment of the present invention are composed of a sulfide mainly composed of a Cu component, a Zn component, and an Sn component.
  • the composition ratio of the Cu component is fcu
  • the composition ratio of the Zn component is fzn
  • the composition ratio of the Sn component is fsn
  • the composition ratio x is an area indicated by a hatched portion X in FIG.
  • composition ratio x represents the ratio of the Cu component to the total of the Zn component and the Sn component
  • composition ratio y represents the ratio of the Zn component to the Sn component
  • (x, y) is A (0.75). , 1.04), B (0.85, 0.86), C (0.92, 0.79), and D (1.00, 0.72).
  • CZTS-based compound semiconductor fine particles having good photoelectric conversion characteristics can be obtained.
  • the photoelectric conversion efficiency IPCE which is an index of photoelectric conversion characteristics, is 0.025% or more.
  • the photoelectric conversion efficiency IPCE is defined by the equation (1 ′) as described in the section “Problems to be Solved by the Invention”. This is expressed by the equation (4) by applying the photoelectric conversion theory. ).
  • ⁇ is the incident intensity (mW / cm 2 )
  • Jsc is the photocurrent density (mA / cm 2 ).
  • the photoelectric conversion efficiency JPCE at the specific wavelength ⁇ at the incident intensity ⁇ can be calculated.
  • the photoelectric conversion efficiency IPCE is 0 at the incident intensity ⁇ : 1 mW / cm 2 and the wavelength ⁇ : 400 nm. Good photoelectric conversion characteristics of 0.025% or more can be obtained.
  • FIG. 2 is a cross-sectional view schematically showing a state in which an ultrafine particle thin film made of compound semiconductor ultrafine particles is formed on a substrate.
  • the ultrafine particle thin film 2 is formed on a substrate 1 such as a quartz substrate, and the ultrafine particle thin film 2 is coated with a dispersion solution in which compound semiconductor ultrafine particles are dispersed in a solvent.
  • the ultrafine particle thin film 2 can be manufactured as follows.
  • a Cu compound, a Zn compound, and a Sn compound each containing a Cu component, a Zn component, and a Sn component are prepared, and an S compound containing S alone or S is prepared.
  • these weighed products are mixed in aliphatic thiol as a solvent, and heated in a container purged with nitrogen at a temperature of 120 to 250 ° C. for about 30 minutes to obtain a composite.
  • the aliphatic thiol since the aliphatic thiol has a high coordination ability to the compound semiconductor surface and is firmly coordinated and fixed to the particle surface, it is possible to suppress grain growth.
  • the type of the aliphatic thiol is not particularly limited, but from the viewpoint of obtaining synthesis at a low temperature, the boiling point is 120 ° C. or more and the number of carbon atoms is 6 or more, for example, hexanethiol, octanethiol. , Dodecanethiol, hexadecanethiol, octadecanethiol, etc. are preferably used, and among these, dodecanethiol is preferably used.
  • the composite is allowed to cool to room temperature, and then centrifuged to remove coarse particles. Then, after that, an insoluble solution or a hardly soluble solution for CZTS ultrafine particles such as methanol, ethanol, acetone, and acetonitrile is added and subjected to a centrifugal separation treatment to obtain a precipitate.
  • an insoluble solution or a hardly soluble solution for CZTS ultrafine particles such as methanol, ethanol, acetone, and acetonitrile is added and subjected to a centrifugal separation treatment to obtain a precipitate.
  • This centrifugation treatment is preferably performed a plurality of times, so that excess aliphatic thiol can be removed.
  • the ultrafine particle dispersion solution thus produced can suppress the average particle size of the ultrafine particles to less than 5 nm, preferably less than 3 nm, in combination with the composition control described above.
  • the substrate 1 is prepared, and the ultrafine particle dispersion solution is applied onto the substrate 1 using a thin film forming method such as a spin coat method, and dried and solidified. Thereby, an ultrafine particle thin film 2 is formed on the substrate 1.
  • a thin film forming method such as a spin coat method
  • the compound semiconductor ultrafine particles have good photoelectric conversion characteristics, and an ultrafine particle thin film that can be applied to various photoelectric conversion devices can be obtained.
  • the average particle diameter is preferably less than 5 nm.
  • the average particle size of the compound semiconductor ultrafine particles can be suppressed to less than 5 nm, the quantum size effect can be expressed, and light absorption is achieved while using the CZTS compound semiconductor having the same composition.
  • various photoelectric conversion devices capable of efficiently and widely controlling the emission wavelength can be obtained.
  • this CZTS-based compound semiconductor acts as a p-type semiconductor, it can be suitably used for a photoelectric conversion device using such an ultrafine particle thin film 2 as a light absorption layer.
  • FIG. 3 is a cross-sectional view schematically showing one embodiment of a solar cell as a photoelectric conversion device.
  • a back electrode 4 made of a metal material such as Mo is formed on a substrate 3 such as soda lime glass by a thin film forming method such as a sputtering method.
  • the light absorption layer 5 made of the ultrafine particle thin film of the present invention is formed by a spin coat method or the like.
  • a first buffer layer 6 made of CdS or the like and a second buffer layer 7 made of ZnO or the like acting as an n-type semiconductor are formed on the surface of the light absorption layer 5 by a thin film forming method such as a sputtering method.
  • a transparent electrode 8 such as ZnOAl is formed on the surface of the second buffer layer 7 by a thin film forming method such as sputtering.
  • An antireflection film 9 such as MgF 2 is formed on the surface of the transparent electrode 8 by a vacuum deposition method or the like.
  • first and second extraction electrodes 10 and 11 made of Al or the like are formed on the back electrode 4 and the surface of the transparent electrode 8, respectively.
  • the CZTS-based compound semiconductor acts as a p-type semiconductor
  • the light absorption layer 5 is formed of the ultrafine particle film of the present invention as described above, and the first and second buffer layers 6,
  • a pn junction semiconductor layer is interposed between the transparent electrode 8 and the back electrode 4.
  • the light absorption layer 5 is formed of the ultrafine particle thin film of the present invention as described above, it is possible to realize a solar cell with good photoelectric conversion characteristics.
  • the average particle size of the compound semiconductor ultrafine particles is less than 5 nm, the quantum size effect can be manifested. Therefore, while using CZTS compound semiconductors of the same composition, the light absorption / emission wavelength is efficient. A solar cell that can be controlled well and widely can be obtained.
  • the present invention is not limited to the above embodiment. It is needless to say that the above embodiment is an embodiment of the present invention and can be changed without changing the gist.
  • a solar cell is exemplified as the photoelectric conversion device, but it goes without saying that the present invention can be similarly applied to various photoelectric conversion devices using photoelectric conversion functions such as various sensors and a hydrogen production apparatus.
  • the rotational speed was set to 4000 rpm, and the reaction solution was subjected to a centrifugal separation operation to remove coarse particles. Then, ethanol was added to the reaction solution from which the coarse particles had been removed, the number of revolutions was set to 15000 rpm, centrifugation was performed, and this operation was repeated twice to obtain a precipitate. Then, the precipitate was dispersed in hexane as a solvent, and then filtered through a filter, thereby preparing ultrafine particle dispersion solutions of sample numbers 1 to 20.
  • the ultrafine particle dispersion solution of sample numbers 1 to 20 was spread on a quartz substrate and hexane was dried to obtain a sample for composition analysis.
  • an ultrafine particle dispersion solution is applied onto a quartz substrate on which an ITO film (transparent conductive film) is formed, and immersed in a 10 wt% ethanedithiol solution for 24 hours to be fixed, Thereby, ultrafine particle thin films of sample numbers 1 to 20 were formed.
  • the spin coating conditions were such that the rotation speed of the quartz substrate was 2000 rpm and the rotation time was 20 seconds.
  • sample evaluation First, for the composition analysis samples of sample numbers 1 to 20, the energy dispersive X-ray analyzer was used to determine the composition ratios fcu, fzn, and fsn of the Cu component, the Zn component, and the Sn component.
  • FIG. 4 is a schematic diagram of a photoelectrochemical measurement apparatus used for measurement of photocurrent.
  • this photoelectrochemical measuring apparatus detects and amplifies a xenon lamp 51 with a filter, a chopper 52 that chops light emitted from the xenon lamp 51 at a chopping frequency of 7 Hz, an electrolytic system 53, and a signal of a chopping frequency. And a lock-in amplifier 54.
  • the electrolytic system 53 includes a reference electrode 57 in which an Ag / AgCl plate 55 is immersed in a saturated KCl aqueous solution 56, a working electrode 59 having an ultrafine particle thin film 58 as a measurement sample, and a potentiostat 60 for detecting photocurrent. And a coiled counter electrode 61 made of Pt and an electrolyte solution 62 made of Eu (NO 3 ) 3 having a concentration of 0.2 mol / L.
  • the electrolyte solution 62 includes a reference electrode 57 and a counter electrode 61. Soaked.
  • the working electrode 59 is formed on the surface of an ITO film 64 in which an ultrafine particle thin film 58 is formed on a quartz substrate 63.
  • the photoelectrochemical measurement apparatus In the thus configured photoelectrochemical measurement apparatus, light from the xenon lamp 51 chopped by the chopper 52 (incident intensity: 1 mW / cm 2 ) is applied to the working electrode 59, and a signal from the working electrode 59 is counter electrode. 61 is transmitted to the potentiostat 60, and the photocurrent is detected by the potentiometer 60. In this embodiment, the photocurrent when the wavelength ⁇ of the light source emitted from the xenon lamp 51 is 400 nm is measured by the potentiostat 60.
  • the photoelectric conversion efficiency IPCE was calculated from the detection result of this photocurrent.
  • the photoelectric conversion efficiency IPCE can be expressed by Expression (4).
  • Table 1 shows the composition ratio ( ⁇ ), the average particle diameter (nm), and the photoelectric conversion efficiency IPCE (%) of each sample Nos. 1 to 20.
  • FIG. 5 shows the relationship between the composition ratio x and the composition ratio y in sample numbers 1 to 20, where the horizontal axis represents the composition ratio x and the vertical axis represents the composition ratio y.
  • the hatched portion X indicates the composition range of the present invention
  • the mark ⁇ indicates the sample of the present invention
  • the mark ⁇ indicates the sample outside the range of the present invention.
  • the average particle size of sample numbers 1 to 20 was 2.1 to 3.0 nm, and ultrafine particles of less than 5 nm capable of exhibiting the quantum size effect could be obtained.
  • the photoelectric conversion efficiency IPCE is 0.003 to 0.020% and less than 0.025%, which is sufficient. Photoelectric conversion characteristics could not be obtained.
  • Sample Nos. 1 to 4 have a combination of the composition ratio x and the composition ratio y within the range of the present invention, so that the photoelectric conversion efficiency IPCE is 0.026 to 0.045% and good photoelectric conversion characteristics can be obtained. I was able to.
  • CZTS-based compound semiconductor ultrafine particles having an average particle diameter of 2.3 to 2.9 nm, less than 5 nm, and having good photoelectric conversion characteristics and capable of exhibiting a quantum size effect are obtained. I found out that
  • CTZS-based compound semiconductor ultrafine particles with good photoelectric conversion characteristics can be realized. And it can be applied not only to solar cells but also to photoelectric conversion devices using various sensors and other photoelectric conversion functions.

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Abstract

L'invention concerne des particules ultrafines de semi-conducteur à composé qui consistent en des sulfures ayant un composant de Cu, un composant de Zn et un composant de Sn en tant que composants principaux, et, en définissant x comme le rapport de composition du composant de Cu sur la totalité du composant de Zn et du composant de Sn et y comme le rapport de composition du composant de Zn sur le composant de Sn, (x, y) est dans une région encadrée par A (0,75, 1,04), B (0,85, 0,86), C (0,92, 0.79) et D (1,00, 0,72). Le diamètre de particule moyen est de préférence inférieur à 5 nm. La couche mince de ces particules ultrafines de semi-conducteur à composé est utilisée en tant que matériau de couche d'absorption de lumière de dispositifs de conversion photoélectrique tels que des cellules solaires. Grâce à celle-ci, des particules ultrafines de semi-conducteur à composé en CZTS ayant d'excellentes caractéristiques de conversion photoélectrique appropriées pour l'application à divers types de dispositifs de conversion photoélectrique sont obtenues, de même qu'une couche mince à particules ultrafines utilisant lesdites particules ultrafines de semi-conducteur à composé, et un dispositif de conversion photoélectrique comprenant une couche d'absorption de lumière formée avec la couche mince de particules ultrafines.
PCT/JP2014/053716 2013-03-07 2014-02-18 Particules ultrafines de semi-conducteur à composé, couche mince à particules ultrafines, et dispositif de conversion photoélectrique WO2014136562A1 (fr)

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JP2016516653A (ja) * 2013-03-15 2016-06-09 ナノコ テクノロジーズ リミテッド Ｃｕ２ＸＳｎＹ４ナノ粒子

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