WO2014123319A1

WO2014123319A1 - Method for producing graphene film

Info

Publication number: WO2014123319A1
Application number: PCT/KR2014/000732
Authority: WO
Inventors: 윤종혁; 원동관
Original assignee: 삼성테크윈 주식회사
Priority date: 2013-02-06
Filing date: 2014-01-27
Publication date: 2014-08-14
Also published as: KR101926488B1; KR20140100326A

Abstract

The present invention provides a method for producing a graphene film, comprising the steps of: preparing a catalytic metal substrate having graphene synthesized on at least one surface thereof; bonding a carrier tape to the graphene at a first temperature; removing the catalytic metal substrate and then bonding the exposed graphene to a target substrate; and peeling the carrier tape at a second temperature, which is lower than the first temperature.

Description

Graphene Film Production Method

An embodiment of the present invention relates to a method for producing a graphene film.

Graphene is a material in which carbon is connected to each other in a hexagonal shape to form a honeycomb two-dimensional planar structure, and its thickness is very thin, transparent, and has a very high electrical conductivity. Many attempts have been made to apply graphene to touch panels, transparent displays, or flexible displays by using these characteristics of graphene. As interest in graphene increases, a method for mass production of high quality graphene is required.

Graphene is synthesized on the surface of the catalyst metal by chemical vapor deposition or the like by adding a carbon source, and attaches a heat-peelable tape to the synthesized graphene. Next, the catalyst metal on one surface of the graphene was removed, and then a heat release tape was peeled off by applying a predetermined heat and pressure, and then the graphene was transferred to the target substrate. Here, the heat-peelable tape includes a foamed cell on the adhesive surface and has a principle that the graphene and the heat-peeled tape are peeled off by foaming the foamed cell when a predetermined heat is applied. Therefore, the heat-peeled tape once used cannot be reused. In addition, graphene is susceptible to damage due to foaming of the foaming cell at the time of peeling of the heat release tape.

Embodiments of the present invention provide a method for producing a graphene film to obtain a low damage graphene.

According to an embodiment of the present invention for solving the above problems, preparing a catalytic metal substrate synthesized with graphene on at least one surface; Adhering a carrier tape to the graphene at a first temperature; Removing the catalytic metal substrate and then bonding the exposed graphene to a target substrate; And peeling the carrier tape at a second temperature lower than the first temperature. It includes, it provides a method for producing a graphene film.

According to the embodiment of the present invention, it is possible to obtain a graphene film with little damage, and it is possible to reuse the carrier tape, which is economical.

1 is a perspective view schematically showing the graphene referred to herein.

2 is a schematic perspective view of a carrier tape referred to herein.

FIG. 3 shows the characteristics of the carrier tape shown in FIG. 2.

4 to 9 are schematic side cross-sectional views of a laminate including graphene corresponding to each step of the method for producing a graphene film according to an embodiment of the present invention.

10 is a graph schematically showing a temperature corresponding to each step of the method for producing a graphene film according to an embodiment of the present invention and a method for producing a graphene film according to a comparative example of the present invention.

In the case of Figure 11 is a data showing the results of repeatedly performing the adhesion and peeling of the carrier tape of 2 in the manufacturing process of the graphene film shown in FIGS.

12 illustrates a method of manufacturing a graphene film according to an embodiment of the present invention by a roll to roll method as mentioned.

Bonding to the target substrate is performed at a third temperature, wherein the third temperature is higher than the second temperature.

The carrier tape has an adhesive force at a temperature higher than a switching temperature, and loses adhesive force at a temperature lower than the switching temperature, wherein the first temperature and the third temperature are higher than the switching temperature, and the second temperature is the switching temperature. Lower than

The carrier tape includes a base layer and an adhesive layer, wherein the adhesive layer comprises an intelligent polymer.

The intelligent polymer has an amorphous state at the first temperature and the third temperature, and has a crystalline state at the second temperature.

Bonding the graphene to the carrier tape, and bonding the graphene to the target substrate, is performed in a pressurized state.

The peeled carrier tape was repeatedly used to prepare a graphene film.

The catalytic metal substrate, carrier tape and target substrate are panel type.

According to an embodiment of the present invention for solving the above problems, preparing a roll-type catalyst metal film of graphene synthesized on at least one surface; Adhering a roll-type carrier tape to the graphene at a first temperature by pressing with a heating roller; Removing the catalytic metal film, and then pressing the exposed graphene with a heating roller to bond it to a roll-type target film; And peeling the carrier tape at a second temperature lower than the first temperature. It comprises a and all the steps are carried out in a roll-to-roll manner, provides a method for producing a graphene film.

The peeled carrier tape was repeatedly used to prepare a graphene film.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terms first, second, etc. used herein may be used to describe various components, but the components should not be limited by the terms. The terms are only used to distinguish one component from another.

In this specification, when a part such as a layer, film, region, plate, etc. is said to be "on" or "on" another part, this includes not only the case where the other part is "right on" but also another part in the middle. do.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings, and in the following description with reference to the drawings, substantially the same or corresponding components will be given the same reference numerals, and redundant description thereof will be omitted. do. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

1 is a perspective view schematically showing the graphene referred to herein.

As used herein, the term "graphene" refers to a graphene in which a plurality of carbon atoms are covalently linked to each other to form a polycyclic aromatic molecule, which is formed in a film form. Although a 6-membered ring is formed as a repeating unit, it is also possible to further include a 5-membered ring and / or a 7-membered ring. The graphene film thus forms a single layer of covalently bonded carbon atoms (C) (usually sp2 bonds). The graphene film may have various structures, and such a structure may vary depending on the content of 5-membered and / or 7-membered rings that may be included in graphene.

The graphene film may be formed of a single layer of graphene as shown, but they may be stacked with each other to form a plurality of layers, and the side end portion of the graphene may be saturated with a hydrogen atom (H). .

On the other hand, as used herein, "graphene film" may mean a laminate in which the graphene of FIG. 1 is transferred to a target substrate or a target film.

2 is a perspective view schematically showing the carrier tape 120 mentioned herein. 3 illustrates the characteristics of the carrier tape 120 of FIG. 2.

As used herein, the "carrier tape" is a member supporting the graphene until the graphene is transferred to the target substrate in the process of manufacturing the graphene film. The carrier tape 120 undergoes a process of adhering and peeling the graphene, and the electrical and optical properties of the obtained graphene film vary depending on the degree of damage to the graphene.

The carrier tape 120 includes a base layer 121 and an adhesive layer 122 several tens of micrometers thick. The adhesive layer 122 is characterized in that it comprises a semi crystalline graft copolymer (semi-crystalline graft copolymer), for example, an intelligent polymer (intelimer polymer). As shown in FIG. 3A, the adhesive layer 122 including such a component has a different adhesive force based on the switching temperature Ts. In detail, as shown in FIG. 3 (b), the intelligent polymer has a crystalline state at a temperature lower than the switching temperature Ts, resulting in a decrease in volume and loss of adhesion. For example, it may have a small adhesive strength of about 0.001 N / 25 mm to about 0.1 N / 25 mm. However, as shown in (c) of FIG. 3, the intelligent polymer has an amorphous stste at a temperature higher than the switching temperature Ts, resulting in an increase in volume and adhesion. For example, it may have a large adhesive strength of about 1N / 25mm to about 10N / 25mm.

The switching temperature (Ts) of the intelligent polymer can be controlled through the length of the aliphatic side-chain crystallizing group and the amount of active ingredient added. For example, the longer the length of the aliphatic side chain crystallization group, the higher the switching temperature (Ts), and conversely, the shorter the length, the lower the switching temperature (Ts). In addition, as the amount of the active ingredient added is increased, the switching temperature Ts is lowered, and when the amount is reduced, the switching temperature Ts can be increased.

According to an embodiment of the present invention, since the carrier tape 120 is directly adhered to graphene and peeled off from graphene, the adhesive force may be maintained at a range of about 0.05N / 25mm to 5N / 25mm. If, when the adhesive force exceeds 5N / 25mm at a higher temperature than the switching temperature, the damage of the graphene is large when peeling the carrier tape 120, there is a problem that the electrical and optical properties of the graphene deteriorate.

On the other hand, according to one embodiment of the present invention, the switching temperature Ts of the carrier tape 120 is suitably in the range of about 30 degrees Celsius to 80 degrees Celsius. If the switching temperature (Ts) is less than 30 degrees Celsius, it is not advantageous in the process because it takes a long time to cool the graphene film when peeling the carrier tape 120. In addition, when the switching temperature Ts is 80 degrees Celsius or more, the process of removing the catalyst metal substrate while the carrier tape 120 is bonded is performed at 80 degrees Celsius or less, so that the carrier tape 120 is removed when the catalyst metal substrate is removed. Is separated from the graphene is a problem that the graphene transfer to the target film is impossible.

The base layer 121 included in the carrier tape 120 may be made of polyethylene terephthalate (PET), silicon, polyimide, or the like, and serves to support the adhesive layer 122. The carrier tape 120 may further include a protective layer (not shown) disposed on the adhesive layer 122 and protecting the adhesive layer 122 until the carrier tape 120 is adhered to the graphene. The protective layer is, for example, a release paper, and is peeled off when the carrier tape 120 is attached to graphene.

Hereinafter, a method of manufacturing a graphene film using the carrier tape 120 will be described.

4 to 9 show that the catalyst metal substrate, the carrier tape and the target substrate used in the production of the graphene film are panel type discontinuous. However, the present invention is not limited thereto, and the catalyst metal film, the carrier film, and the target film used in the production of the graphene film as shown in FIG. 12 may be in a continuous roll type in one direction. Therefore, in the case of a roll type, the term is described as a film distinguishing from the panel type. In the following description, for convenience of description, the panel type will be described first.

4 to 9 are schematic side cross-sectional views of a laminate including graphene corresponding to each step of the method for producing a graphene film according to an embodiment of the present invention. 10 is a graph schematically showing a temperature corresponding to each step of the method for producing a graphene film according to an embodiment of the present invention and a method for producing a graphene film according to a comparative example of the present invention.

A shown in Figure 10 is a temperature value used in the graphene film manufacturing step according to an embodiment of the present invention. In the case of A is to prepare a graphene film using a carrier tape of FIG. On the other hand, B is a temperature value used in the graphene film manufacturing step according to the comparative example of the present invention. In the case of B, a graphene film is manufactured by using a thermal release tape mentioned in [Background of the Invention]. In FIG. 10, the x-axis is divided into respective processes, respectively, a graphene forming process (I), a carrier tape bonding process (II), a catalyst metal removal process (III), a target substrate bonding process (IV), and a carrier tape peeling process (V). )to be.

As used herein, the term “laminate” refers to a plurality of layers including graphene 110, and includes a catalytic metal substrate 101 on graphene 110 according to the graphene 110 manufacturing process. It may represent a state including at least one layer of the carrier tape 120 and the target substrate 130.

Referring to FIG. 4, first, a catalytic metal substrate 101 is prepared.

The catalytic metal substrate 101 may be formed in a discontinuous panel form as a catalyst thin film for graphene growth. The catalytic metal substrate 101 includes copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), gold (Au), silver (Ag), aluminum (Al), and chromium (Cr). ), Magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium ( V), at least one of palladium (Pd), yttrium (Y), zirconium (Zr), germanium (Ge), brass, bronze, white brass and stainless steel It may include a metal or an alloy, but is not limited thereto.

The catalytic metal substrate 101 may be a single layer, or one of the multilayer substrates consisting of at least two layers may be the catalytic metal layer 101. In this case, the catalytic metal layer 101 is disposed on the outermost side of the multilayer substrate.

Before the graphene 110 is formed, a pretreatment process of cleaning the surface of the catalytic metal substrate 101 is performed. The pretreatment process is to remove foreign substances present on the surface of the catalytic metal substrate 101, and may use hydrogen gas. In addition, by cleaning the surface of the catalyst metal substrate 101 using an acid or an alkaline solution, defects in the formation of the graphene 110, which is a subsequent process, may be reduced. This step of cleaning the surface of the catalytic metal substrate 101 may be omitted as necessary.

Next, referring to FIG. 5, the graphene 110 forming process is performed.

The graphene 110 formation process includes chemical vapor deposition (CVD), thermal chemical vapor deposition (TCVD), rapid thermal chemical vapor deposition (PTCVD), and inductively coupled plasma. Various processes, such as Inductive Coupled Plasma Chemical Vapor Deposition (ICP-CVD) and Atomic Layer Deposition (ATLD), may be used.

When the catalytic metal substrate 101 is transferred to the graphene formation chamber, the carbonaceous carbon source is introduced into the graphene formation chamber and heat treated. The heat treatment consists of heating and cooling. In detail, an inert gas or an inert gas is injected into the graphene forming chamber, and then the internal space is heated. For example, the temperature of the interior space may be about 500 ° C or 1000 ° C or more. The gaseous source of carbon is then supplied to the interior space.

Gas sources of carbon dioxide are methane (CH ₄ ), carbon monoxide (CO), ethane (C ₂ H ₆ ), ethylene (CH ₂ ), ethanol (C ₂ H ₅ ), acetylene (C ₂ H ₂ ), propane (CH ₃₎ CH ₂ CH ₃ ), propylene (C ₃ H ₆ ), butane (C ₄ H ₁₀ ), pentane (CH ₃ (CH ₂ ) ₃ CH ₃ ), pentene (C ₅ H ₁₀ ), cyclopentadiene (C ₅ H ₆ ), one or more selected from the group containing carbon atoms such as hexane (C ₆ H ₁₄ ), cyclohexane (C ₆ H ₁₂ ), benzene (C ₆ H ₆ ), toluene (C ₇ H ₈ ) may be used.

This gaseous carbon source is separated into carbon and hydrogen atoms at high temperatures. The separated carbon atoms are deposited on the heated catalyst metal substrate 101, and the graphene 110 of FIG. 1 is formed while the catalyst metal substrate 101 is cooled.

10 shows the temperature of the graphene formation chamber during the internal space heating of the graphene formation process (I). In the case of the graphene forming process (I), since the process is common to one embodiment A and Comparative Example B of the present invention, temperature values are the same.

The graphene 110 may be formed on at least one surface of the catalytic metal substrate 101. The graphene 110 may be formed on both surfaces of the catalytic metal substrate 101, but is not limited thereto. The graphene 110 may be formed only on one surface of the catalytic metal substrate 101. Hereinafter, the rest of the process will be described based on an example in which the graphene 110 is formed on one surface of the catalytic metal substrate 101.

Next, referring to FIG. 6, the laminate 50 of FIG. 5 is bonded to one surface of the carrier tape 120 of FIG. 2.

First, the stack 50 of FIG. 5 and the carrier tape 120 of FIG. 2 are disposed such that the top surface of the graphene 110 and the adhesive layer 122 of FIG. 2 face each other. Next, the laminated body 50 of FIG. 5 and the carrier tape 120 are bonded together by applying heat and pressure.

According to an embodiment A of the present invention, since the carrier tape 120 of FIG. 2 has an adhesive force at a temperature higher than the switching temperature Ts, the carrier tape 120 bonding process II is shown in FIG. 10. Likewise, the temperature is higher than the switching temperature Ts. For example, when the switching temperature Ts of the carrier tape 120 is about 30 degrees Celsius, the process may be performed at about 50 degrees to 70 degrees Celsius. On the other hand, when bonding the carrier tape 120 is accompanied by a step of pressing to prevent wrinkles or voids (void) between the graphene 110 and the adhesive layer (122 of FIG. 2).

However, unlike Example A of the present invention, in the case of Comparative Example B, the process of adhering the heat-peelable tape to the laminate of FIG. 5 does not require high temperature, and thus may be mainly performed at room temperature.

Next, referring to FIG. 7, the catalyst metal substrate 101 is removed from the laminate 60 of FIG. 6.

The process of removing the catalytic metal substrate 101 may use a wet etching process. However, the present invention is not limited thereto, and a dry etching process of etching or polishing one surface of the catalytic metal substrate 101 before the wet etching process or adding a polishing process may be used to shorten the catalyst metal substrate 101 removal process time. have.

The catalyst metal removal liquid may vary depending on the type of catalyst metal, but is typically ammonium persulfate ((NH ₄ ) ₂ S ₂ O ₈ ), hydrogen fluoride (HF), buffered oxide etch (BOE), iron chloride (FeCl ₃ ), Iron nitrate (Fe (NO ₃ ) ₃ ), copper chloride (CuCl ₂ ), hydrogen peroxide (H ₂ O ₂ ), sulfuric acid (H ₂ SO ₄ ), sodium persulfate (Na ₂ S ₂ O ₈ ), and the like can be used. . However, the present invention is not limited thereto, and a solution of persulfate-based solution, which is a composition including hydrogen peroxide (H ₂ O ₂ ), sulfuric acid (H ₂ SO ₄ ), and water (H ₂ O), may be used.

According to Example A of the present invention, the catalytic metal removal process (III) may be performed at a temperature higher than the switching temperature Ts as shown in FIG. 10. Because, while removing the catalyst metal, the carrier tape 120 and the graphene 110 should be kept in a bonded state, and if the step of removing the catalyst metal is performed at low temperature, the removal rate of the catalyst metal is slow and efficient. Because it falls. For example, when the switching temperature Ts of the carrier tape 120 is about 30 degrees Celsius, the present process may be performed at about 30 degrees to 50 degrees Celsius.

On the other hand, similar to Example A of the present invention, Comparative Example B may also be made at a temperature higher than room temperature in order to speed up the catalyst metal removal rate.

As a non-limiting example of removing the catalyst metal substrate 101 using the catalyst metal removal liquid, Cu is used as the catalyst metal substrate 101, and H ₂ O ₂ , H ₂ SO _4, and water are used as the catalyst metal removal liquid. Persulfate-based solution containing a can be used. As shown in Scheme 1, Cu is oxidized by H ₂ O ₂ to be converted to CuO, and as shown in Scheme 2, CuO reacts with H ₂ SO ₄ to form CuSO ₄ , which is a water-soluble salt. The catalytic metal substrate 101 can be removed through the substrate.

Scheme 1

Cu + H ₂ O ₂ → CuO + H ₂ O

Scheme 2

CuO + H ₂ SO ₄ → CuSO ₄ + H ₂ O

After removing the catalyst metal substrate 101, the catalyst metal removal liquid remaining in the laminate may be further cleaned and dried.

Next, referring to FIG. 8, a process of bonding the laminate 70 of FIG. 7 to the target substrate 130 is performed.

The target substrate 130 refers to a substrate on which the graphene 110 is to be finally formed. The target substrate 130 may include at least one of polyethylene terephthalate (PET), polyimide (PI), polydimethylsiloxane (PDMS), plastic, glass, and metal, but is not limited thereto. It is not.

According to an embodiment A of the present invention, the target substrate bonding process (IV) may be performed by pressing at a temperature higher than the switching temperature Ts as shown in FIG. 10. This is because the carrier tape 120 and the graphene 110 are bonded to each other while the target substrate 130 is bonded. In addition, when the step of bonding the target substrate 130 experimentally is performed only at room temperature, since the target substrate 130 is not bonded to the graphene 110, the target substrate 130 should be bonded at a high temperature. For example, when the switching temperature Ts of the carrier tape 120 is about 30 degrees Celsius, the process may be performed at about 50 degrees to 70 degrees Celsius.

However, unlike Example A of the present invention, Comparative Example B does not require a temperature for maintaining the adhesion of the graphene 110 and the heat-peelable tape 120, so that the bonding of the target substrate 130 is performed only by pressing at room temperature. Can be.

Next, referring to FIG. 9, the carrier tape 120 is peeled from the laminate 80 of FIG. 8.

First, FIG. 8 transfers the laminated body 80 to a peeling chamber, and then lowers an internal temperature below switching temperature Ts by a cooling apparatus. Next, the carrier tape 120 is peeled from the laminate 80 by applying a predetermined force.

According to one embodiment of the present invention, since the carrier tape 120 of FIG. 2 loses the adhesive force at a temperature lower than the switching temperature Ts, the carrier tape peeling process (V) is switched as shown in FIG. 10. The temperature is lower than the temperature Ts. For example, when the switching temperature Td of the carrier tape 120 is about 30 degrees Celsius, the process may be performed at about 25 degrees Celsius or less, which is room temperature.

However, unlike Example A of the present invention, in Comparative Example B, the heat peeling tape is peeled only when the foaming cell is foamed at a high temperature, so the process must be performed at a high temperature. For example, the process of removing the heat peeling tape may be performed at about 100 degrees Celsius or more. Thus, for Comparative Example B, the heat peeling tape peeling process is performed in a high temperature chamber.

As such, according to one embodiment of the present invention, since the high temperature process is not required when peeling the carrier tape 120, the manufacture of the graphene film 90 is not limited to the thickness and the material of the target substrate 130. There are possible features. Attempts have been made to form the graphene film 90 into a thinner film according to a user's request. For this purpose, the thickness of the target substrate 130 should be thinner. However, since the graphene film manufacturing process using the heat peeling tape involves a high temperature process after the target substrate 130 is transferred, the target substrate 130 must use a material having heat resistance, and the thickness of the target substrate 130 is increased. There is a limitation that cannot be made into a thin film above a certain level. However, according to the exemplary embodiment of the present invention, since there is no high temperature process after the target substrate 130 is transferred, the material of the target substrate 130 is not limited, and the thickness of the target substrate 130 may also be made as an ultra-thin film.

In addition, according to an embodiment of the present invention can be obtained a graphene film 90 less damage. In the case of using the heat peeling tape, the graphene 110 was often damaged by the foaming of the foamed cell when the heat peeling tape was peeled off. However, when the carrier tape 120 of FIG. 2 is used, the graphene film 90 having good electrical and optical properties may be obtained since the carrier tape 120 is not related to the foam cell and thus fundamentally solves the problem.

Next, although not shown, the graphene 110 doping process is performed.

Doping may be performed to improve the electrical characteristics of the exposed graphene 110, and may be performed by a dry doping or a wet doping method. In addition, a protective film may be further attached onto the doped graphene 110.

Next, the graphene film 110 thus produced may be further subjected to an analysis process to analyze whether there is no damage, what electrical characteristics.

As described above, the target substrate 130 coated with the graphene 110 may be referred to as a graphene film 90, and may be used as a transparent electrode film such as a flexible display, an organic light emitting diode, and a solar cell.

The manufacturing process of the graphene film 110 described above is not limited to the above description, some orders may be changed, some steps may be omitted or added.

11 is a graph showing the degree of change in adhesive force when the carrier tape 120 of FIG. 2 is repeatedly used.

In the case of Figure 11 is a data showing the results of repeatedly performing the adhesion and peeling of the carrier tape 120 of 2 in the manufacturing process of the graphene film shown in FIGS. Each cycle shown in Figure 11 represents one time of the manufacturing process of the graphene film. In each turn, the process of adhering the carrier tape 120 is performed at a higher temperature than the switching temperature Ts, and the process of peeling the carrier tape 120 is performed at a lower temperature than the switching temperature Ts.

As can be seen in Figure 11, in the case of the carrier tape 120 of Figure 2 it can be confirmed that even if used repeatedly up to five times the adhesive force is maintained. Experimentally, in the case of the carrier tape 120 of FIG. 2, the adhesive force may be maintained at about 50% or more of the initial adhesive force when repeated three or more times. Therefore, according to one embodiment of the present invention, by manufacturing the graphene film 90 using the carrier tape 120 of Figure 2 that can be repeatedly used, there is a feature that can reduce the process cost.

Meanwhile, a cleaning process may be added to remove foreign matter or dust from the carrier tape 120 before the carrier tape 120 is reused.

12 illustrates a method of manufacturing a graphene film according to an embodiment of the present invention by a roll to roll method as mentioned. In the roll-to-roll method, a continuous roll type catalyst metal film 101a carrier film 120a and a target film 130a are used. In the roll-to-roll method, the roll-type material is transferred while moving in one direction, thereby allowing mass production of graphene film.

First, the catalyst metal film 101a is prepared, but the catalyst metal film 101a is wound around the first unwinding roll 10. The catalyst metal film 101a wound on the first take-up roll 10 is transferred to the graphene forming process (I) chamber, and then, on the at least one surface of the catalyst metal film 101 a as shown in the laminate 50 of FIG. A pin (110 in FIG. 5) is formed.

Next, while the carrier film 120a wound up on the 2nd unwinding roll 20 is unwinded, it is transferred to a carrier film bonding process (II) chamber, and is bonded by the 5th laminated body 50. FIG. The carrier film 120a and the fifth laminated body 50 are bonded through the first heating-pressing roller set 21. That is, the first heating-pressing roller set 21 heats the carrier film 120a to have an adhesive force, and presses and adheres the carrier film 120a and the fifth laminated body 50 to the sixth laminated body 60. Manufacture).

Next, the sixth laminated body 60 is transferred to the catalytic metal removal process (III) chamber to remove the catalytic metal film 101a, thereby producing the seventh laminated body 70.

Next, the target film 130a wound on the third unwinding roll 30 is transferred to the target film bonding step (IV) chamber and bonded to the seventh laminated body 70. The target film 130a and the frame 7 laminate 70 are bonded to each other through the second heating-pressing roller set 32. That is, the second heating-pressing roller set 32 heats the carrier film 120a to maintain adhesion, and presses and adheres the target film 130a and the seventh laminated body 70 to the eighth laminated body 80. Manufacture).

Finally, the carrier film 120a is peeled off from the eighth laminated body 80 transferred to the carrier film peeling process (V) chamber. The chamber includes a cooling device to maintain an internal temperature lower than the switching temperature Ts of the carrier film 120a. Therefore, in this chamber, the adhesive force of the carrier film 120a is lost and the carrier film 120a is easily peeled off from the eighth laminated body 80. The carrier film 120a thus peeled off is recovered and reused in the fourth unwinding roll.

A detailed description of each step of FIG. 12 has already been described with reference to FIGS. 4 through 9 and 10, and thus redundant descriptions are omitted.

Although the present invention has been described with reference to the embodiments illustrated in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

According to an embodiment of the present invention, embodiments of the present invention may be applied to a transparent electrode including graphene, an active layer, a display device including the same, an electronic device, an optoelectronic device, a battery, a solar cell, and the like.

Claims

Preparing a catalytic metal substrate having graphene synthesized on at least one surface thereof;
Adhering a carrier tape to the graphene at a first temperature;
Removing the catalytic metal substrate and then bonding the exposed graphene to a target substrate; And
Peeling the carrier tape at a second temperature lower than the first temperature;
Comprising a graphene film.
The method of claim 1,
Bonding to the target substrate is performed at a third temperature, wherein the third temperature is higher than the second temperature, a method for producing a graphene film.
The method of claim 2,
The carrier tape has adhesion at temperatures above the switching temperature, and loses adhesion at temperatures below the switching temperature,
And the first temperature and the third temperature are higher than the switching temperature, and the second temperature is lower than the switching temperature.
The method of claim 1,
The carrier tape comprises a base layer and an adhesive layer,
The adhesive layer comprises an intelligent polymer, a method for producing a graphene film.
The method of claim 4, wherein
The intelligent polymer has an amorphous state at the first temperature and the third temperature, and has a crystalline state at the second temperature.
The method of claim 1,
Adhering a carrier tape to the graphene, and bonding the graphene to a target substrate, are performed in a pressurized state.
The method of claim 1,
Method for producing a graphene film, by repeatedly using the peeled carrier tape to produce a graphene film.
The method of claim 1,
The catalyst metal substrate, the carrier tape and the target substrate is a panel type, a method for producing a graphene film.
Preparing a roll type catalyst metal film having graphene synthesized on at least one surface thereof;
Adhering a roll-type carrier tape to the graphene at a first temperature by pressing with a heating roller;
Removing the catalytic metal film, and then pressing the exposed graphene with a heating roller to bond it to a roll-type target film; And
Peeling the carrier tape at a second temperature lower than the first temperature;
Including the steps are all roll-to-roll method, the graphene film production method.
The method of claim 9,
Bonding to the target substrate is performed at a third temperature, wherein the third temperature is higher than the second temperature, a method for producing a graphene film.
The method of claim 10,
The carrier tape has adhesion at temperatures above the switching temperature, and loses adhesion at temperatures below the switching temperature,
And the first temperature and the third temperature are higher than the switching temperature, and the second temperature is lower than the switching temperature.
The method of claim 9,
Method for producing a graphene film, by repeatedly using the peeled carrier tape to produce a graphene film.