WO2014119653A1

WO2014119653A1 - Sputtering film forming device

Info

Publication number: WO2014119653A1
Application number: PCT/JP2014/052063
Authority: WO
Inventors: 建典笹井; 浩孝豊田
Original assignee: 東海ゴム工業株式会社; 国立大学法人名古屋大学
Priority date: 2013-01-30
Filing date: 2014-01-30
Publication date: 2014-08-07
Also published as: JP2014145118A

Abstract

A sputtering film forming device (1) is provided with: a dielectric part (30) for a target; a microwave plasma generating mechanism (5) which is provided with a rectangular waveguide (51) which transmits microwaves and has a slot antenna (510) in which a slot (511) through which the microwaves pass is formed, wherein the slot (511) is covered by the dielectric part (30) and plasma (P1) is generated on a front surface (300) of the dielectric part (30) by the microwaves that pass through the slot (511); a high-frequency plasma generating mechanism (4) that is disposed on a reverse surface of the dielectric part (30), which is on the reverse side from the front surface (300) thereof, and that generates plasma (P2) at a high frequency; and a base material (20) disposed facing the front surface (300) of the dielectric part (30). The sputtering film forming device (1) causes sputtering particles that have been ejected from the dielectric part (30) to deposit on the base material (20) so as to form a thin film.

Description

Sputter deposition system

The present invention relates to a sputtering film forming apparatus that performs sputtering film formation using microwave plasma with an insulator as a target.

In sputter film formation using an insulator such as silica or alumina as a target, a high frequency (RF) method is used because discharge is not stably maintained in the direct current method. However, the high-frequency method has a problem that the electron density on the target surface is low and the film formation rate is low. Therefore, magnetron sputtering is often used in which a magnet is disposed on the rear surface of the target and the film formation speed is increased by increasing the electron density on the target surface by the generated magnetic field (see, for example, Patent Documents 1 to 3).

JP-A-4-284630 JP 7-34245 A JP 2010-37656 A JP 2012-234463 A

In magnetron sputtering, electrons on the target surface are confined by a magnetic field to increase the electron density. For this reason, the sputter | spatter area | region of a target is dependent on the arrangement | positioning form of a magnet. That is, in the target, the portion where electrons are captured on the target surface by the magnetic force is intensively sputtered. As a result, an erosion region that is greatly eroded is formed on the target. As described above, according to magnetron sputtering, only a specific region of the target can be used, and the use efficiency of the target is low. Moreover, since the whole target surface is not sputtered uniformly, the density of the particles adhering to the surface of the substrate (adhered body) is not uniform. Therefore, it is difficult to form a thin film having a uniform thickness on the substrate.

In order to improve these problems, for example, it may be possible to form a film while moving the base material or magnet. However, in order to move the base material and the magnet, a new driving device or the like is required, which increases the cost. In addition, when a film is formed on a small piece base material such as a wafer, the film formation particles are scattered outside the base material, resulting in a new problem such as a reduction in target use efficiency or the need to clean the scattering particles. It will occur.

The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a sputter deposition apparatus capable of forming a thin film with a uniform thickness on a base material at high speed using an insulator as a target. And

(1) In order to solve the above problems, a sputtering film forming apparatus of the present invention includes a rectangular conductor having a dielectric part as a target and a slot antenna in which a microwave is transmitted and a slot through which the microwave passes is formed. A microwave tube generating mechanism for generating plasma on the surface of the dielectric part by the microwave passing through the slot, the slot being covered with the dielectric part, and the dielectric part A high-frequency plasma generation mechanism that generates plasma at a high frequency and is disposed on a back surface facing away from the surface; and a base material that is disposed to face the surface of the dielectric portion, from the dielectric portion The sputtered particles that protrude are attached to the surface of the substrate to form a thin film.

In the sputter film forming apparatus of the present invention, a film is formed on the surface of a base material using a dielectric part made of an insulator as a target. A high-frequency plasma generation mechanism is disposed on the back surface of the dielectric portion opposite to the substrate. Thereby, high-frequency plasma is generated on the surface of the dielectric portion. On the other hand, microwave plasma is generated on the surface of the dielectric portion facing the substrate by the microwave plasma generation mechanism. By using both the high-frequency plasma generation mechanism and the microwave plasma generation mechanism, the electron density near the surface of the dielectric portion is increased. That is, as compared with the case where the high-frequency plasma generation mechanism is used alone, a gas such as argon is easily ionized, so that the number of positively charged particles that sputter the dielectric portion increases. Further, when a high frequency voltage is applied to the dielectric portion by the high frequency plasma generation mechanism, the dielectric portion is biased to a negative potential. Thereby, positively charged particles are attracted to the dielectric part.

Thus, in the sputter film forming apparatus of the present invention, a large number of positively charged particles are generated and attracted to the dielectric part for sputtering, so that the film forming speed increases. Further, unlike magnetron sputtering, the surface of the dielectric portion is uniformly sputtered, so that a thin film with a uniform film thickness can be formed. And the problem that the use efficiency of the target in magnetron sputtering is low is also eliminated. As described above, the dielectric portion in the sputter film forming apparatus of the present invention plays two roles of a role as a target and a role of generating microwave plasma.

(2) Preferably, in the configuration of the above (1), in the microwave plasma generation mechanism, the incident direction of the microwave that passes through the slot and enters the dielectric portion is the surface of the dielectric portion. It is better to have a configuration parallel to

In order to suppress the intrusion of impurities and maintain the film quality, it is desirable to perform sputter deposition under a low pressure of about 0.5 to 3 Pa. In a conventional microwave plasma generation apparatus, microwave plasma is generated under a relatively high pressure of 5 Pa or more. For this reason, when a conventional microwave plasma generation apparatus is used, it is difficult to stably generate microwave plasma under a low pressure in which sputtering film formation is performed. Therefore, the present inventor has developed an apparatus that can stably generate microwave plasma even under low pressure by making the microwave incident along the generated microwave plasma (see Patent Document 4). .

In the microwave plasma generation mechanism of this configuration, the microwave incident direction in the dielectric portion and the substrate-side surface (plasma generation surface) are parallel to each other as in the apparatus described in Patent Document 4 above. . Since the microwave is incident on the dielectric portion along the generated microwave plasma, the microwave that is the plasma source easily propagates to the microwave plasma. Therefore, microwave plasma can be stably generated even under a low pressure of 3 Pa or less.

(3) Preferably, in the configuration of the above (1) or (2), the dielectric portion is preferably composed of one kind selected from quartz, alumina, zirconia, aluminum nitride, and magnesium oxide.

The material of the dielectric part may be appropriately determined according to the thin film to be formed. The material of this configuration is difficult to absorb microwaves. For this reason, there is little loss of the microwave used as a plasma source. In addition, there is little possibility that the dielectric portion is destroyed due to heat generated by the absorption of microwaves.

(4) Preferably, in any one of the configurations (1) to (3), the slot antenna is preferably arranged on the H surface of the rectangular waveguide.

(5) In any one of the configurations (1) to (4), it is preferable that the film formation on the base material is performed under a pressure of 0.5 Pa or more and 100 Pa or less.

The pressure at the time of film formation is not particularly limited, but is preferably 0.5 Pa or more and 100 Pa or less. For example, if the pressure during film formation is 10 Pa or less, the generated microwave plasma can be expanded. Moreover, according to the configuration of (2) above, stable plasma can be generated even under a low pressure of 3 Pa or less. In this case, since mixing of impurities is suppressed, a thin film with high purity can be formed.

It is a front-back direction sectional drawing of the sputter film deposition apparatus of embodiment. It is a perspective view of the vicinity of a sputter part in the sputter deposition apparatus. It is a graph which shows the film-forming speed | rate for every position of the base-material surface.

1: Sputter deposition apparatus.
20: base material, 21: base material support member, 210: leg part, 211: table part.
3: Sputtering part, 30: Dielectric part, 31: Support plate part, 32-35: Insulating member, 300: Front surface (surface).
4: High-frequency plasma generation mechanism, 40: electrode portion, 41: blocking capacitor, 42: high-frequency power source, 400: flat plate portion, 401: rod portion.
5: microwave plasma generation mechanism, 51: waveguide, 52: microwave power source, 53: microwave oscillator, 54: isolator, 55: power monitor, 56: EH matching device, 510: slot antenna, 511: slot.
8: vacuum container, 80: gas supply hole, 81: exhaust hole, 82: waveguide insertion hole, 83: electrode part insertion hole.
P1: microwave plasma, P2: high frequency plasma.

Hereinafter, embodiments of the sputter deposition apparatus of the present invention will be described.

<Configuration of sputter deposition system>
First, the configuration of the sputter deposition apparatus of this embodiment will be described. FIG. 1 is a cross-sectional view in the front-rear direction of the sputter deposition apparatus of this embodiment. FIG. 2 is a perspective view of the vicinity of the sputtering unit in the sputtering film forming apparatus. In FIG. 2, the rear wall of the vacuum vessel is omitted, and the interior of the waveguide is shown.

As shown in FIGS. 1 and 2, the sputter film forming apparatus 1 includes a vacuum vessel 8, a base material 20, a base material support member 21, and a sputter unit 3.

The vacuum vessel 8 is made of aluminum steel and has a rectangular parallelepiped box shape. A gas supply hole 80 is formed in the upper wall of the vacuum vessel 8. The gas supply hole 80 is connected to a downstream end of a gas supply pipe (not shown) for supplying argon (Ar) gas into the vacuum vessel 8. An exhaust hole 81 is formed in the lower wall of the vacuum vessel 8. A vacuum exhaust device (not shown) for exhausting the gas inside the vacuum vessel 8 is connected to the exhaust hole 81. A waveguide insertion hole 82 and an electrode part insertion hole 83 are formed in the rear wall of the vacuum vessel 8. A downstream end of a waveguide 51 to be described later is inserted into the waveguide insertion hole 82. A rod portion 401 of the electrode portion 40 to be described later is inserted into the electrode portion insertion hole 83.

The base material support member 21 has a pair of leg portions 210 and a table portion 211. Each of the pair of leg portions 210 is made of stainless steel and has a cylindrical shape. The outer peripheral surfaces of the pair of leg portions 210 are covered with an insulating layer. The pair of leg portions 210 are spaced apart in the vertical direction. The front ends of the pair of leg portions 210 are fixed to the front wall of the vacuum vessel 8. The rear ends of the pair of leg portions 210 are fixed to the front surface of the table portion 211. The table portion 211 is made of stainless steel and has a hollow rectangular plate shape. The inside of the table portion 211 is filled with a cooling liquid. The table portion 211 is cooled by circulating the coolant.

The base material 20 is made of a silicon wafer and has a rectangular plate shape. The length of the base material 20 in the left-right direction is 200 mm. The base material 20 is fixed to the rear surface of the table unit 211.

The sputter unit 3 includes a dielectric unit 30, a high-frequency plasma generation mechanism 4, and a microwave plasma generation mechanism 5. The microwave plasma generation mechanism 5 includes a waveguide 51, a microwave power source 52, a microwave oscillator 53, an isolator 54, a power monitor 55, and an EH matching device 56.

The waveguide 51 is made of aluminum and has a tubular shape with a rectangular cross section. The waveguide 51 is included in the rectangular waveguide in the present invention. The waveguide 51 connects a microwave oscillator 53, an isolator 54, a power monitor 55, and an EH matching unit 56.

A slot antenna 510 is disposed on the lower surface of the waveguide 51 disposed in the vacuum vessel 8. The slot antenna 510 is made of aluminum and has a rectangular plate shape. The slot antenna 510 forms the lower wall of the waveguide 51. The slot antenna 510 is disposed on the H surface of the waveguide 51. One slot 511 is formed in the slot antenna 510. The slot 511 has a long hole shape extending in the left-right direction.

The dielectric part 30 is made of quartz and has a square plate shape. Dielectric part 30 is arranged on the lower surface of slot antenna 510. The dielectric part 30 covers the slot 511 from below. The front surface 300 of the dielectric part 30 is disposed in parallel to the incident direction Y1 of the microwave incident from the slot 511. The size of the front surface 300 is vertical (vertical direction) 100 mm × horizontal (horizontal direction) 100 mm. The dielectric portion 30 is disposed so that the front surface 300 faces the base material 20. The front surface 300 of the dielectric part 30 is included in the surface of the dielectric part in the present invention.

The high-frequency plasma generation mechanism 4 includes an electrode unit 40, a blocking capacitor 41, and a high-frequency power source 42.

The electrode part 40 has a flat plate part 400 and a bar part 401. The flat plate portion 400 is made of aluminum and has a rectangular flat plate shape. The flat plate portion 400 is disposed on the rear surface facing away from the front surface 300 of the dielectric portion 30. An insulating member 32 is interposed between the flat plate portion 400 and the slot antenna 510. Similarly, an insulating member 33 is interposed between the flat plate portion 400 and the support plate portion 31. The insulating

members

32 and 33 are both made of ceramics and have a thin plate shape. The insulating member 32 insulates between the slot antenna 510 and the flat plate portion 400. The insulating member 33 insulates between the support plate portion 31 and the flat plate portion 400.

Further, an insulating member 34 is interposed between the flat plate portion 400 and the rear wall of the vacuum vessel 8. The insulating member 34 is made of quartz and has a thin plate shape. A circular hole for inserting the rod portion 401 is formed in the center of the insulating member 34. The insulating member 34 insulates between the vacuum vessel 8 and the flat plate portion 400 and suppresses generation of plasma between the vacuum vessel 8 and the flat plate portion 400.

The bar 401 is made of aluminum and has a cylindrical shape. The bar portion 401 protrudes rearward from the center of the rear surface of the flat plate portion 400. The rod portion 401 penetrates the hole of the insulating member 34 and the electrode portion insertion hole 83 and protrudes to the rear of the vacuum vessel 8. An insulating member 35 is disposed between the outer peripheral surface of the rod portion 401 and the inner peripheral surface of the electrode portion insertion hole 83. The insulating member 35 is made of ceramics and has a cylindrical shape. The insulating member 35 supports the rod portion 401 and insulates the vacuum vessel 8 from the rod portion 401. The rear end of the bar 401 is connected to the high frequency power source 42 via the blocking capacitor 41.

The support plate portion 31 is made of stainless steel and has a flat plate shape. The support plate portion 31 is attached to the rear wall of the vacuum vessel 8. The support plate portion 31 is disposed so as to contact the lower surface of the dielectric portion 30 and the lower surfaces of the insulating

members

33 and 34.

<Sputter deposition method>
Next, a film forming method using the sputter film forming apparatus 1 will be described. First, an evacuation device (not shown) is operated to discharge the gas inside the vacuum vessel 8 from the exhaust hole 81, thereby reducing the pressure inside the vacuum vessel 8. Next, Ar gas is supplied into the vacuum vessel 8 from the gas supply pipe. At this time, the flow rate of the supply gas is adjusted so that the pressure in the vacuum vessel 8 is about 10 to 100 Pa.

Then, the microwave power source 52 is turned on. When the microwave power source 52 is turned on, the microwave oscillator 53 oscillates a microwave having a frequency of 2.45 GHz. The oscillated microwave propagates in the waveguide 51. Here, the isolator 54 suppresses the microwave reflected from the waveguide 51 from returning to the microwave oscillator 53. The power monitor 55 monitors the output of the generated microwave and the output of the reflected microwave. The EH matching device 56 adjusts the amount of reflected microwaves. The microwave propagating through the waveguide 51 enters the slot 511 of the slot antenna 510. 2 passes through the slot 511 and enters the dielectric portion 30 as indicated by a hollow arrow Y1 in FIG. The microwave incident on the dielectric part 30 mainly propagates along the front surface 300 of the dielectric part 30. Due to this strong microwave electric field, Ar gas is ionized, and microwave plasma P 1 is generated forward from the front surface 300 of the dielectric part 30. Thereafter, while maintaining the generation of the microwave plasma P1, the flow rate of Ar gas is adjusted so that the pressure in the vacuum vessel 8 becomes 1 Pa.

Next, the high frequency power source 42 is turned on, and a high frequency voltage is applied to the electrode unit 40. Then, high frequency plasma P 2 is generated forward from the front surface 300 of the dielectric part 30. Further, a negative bias potential is generated on the front surface 300 of the dielectric part 30. Thereby, the argon ions in the generated microwave plasma P1 and high-frequency plasma P2 are attracted to the dielectric part 30, and the front surface 300 is sputtered. The sputtered particles knocked out from the dielectric portion 30 are scattered toward the base material 20 and adhere to the rear surface of the base material 20. In this way, a silica thin film is formed on the rear surface of the substrate 20.

<Effect>
Next, the function and effect of the sputter deposition apparatus 1 of this embodiment will be described. In the sputter deposition apparatus 1 of the present embodiment, the dielectric part 30 serves as a target and plays a role of generating the microwave plasma P1. Microwave plasma P1 and high-frequency plasma P2 are generated on the front surface 300 (plasma generation surface) of the dielectric portion 30. By using the high-frequency plasma generation mechanism 4 and the microwave plasma generation mechanism 5 in combination, the electron density near the front surface 300 of the dielectric part 30 is increased. That is, as compared with the case where the high-frequency plasma generation mechanism 4 is used alone, the argon gas is easily ionized, so that the number of argon ions for sputtering the dielectric portion 30 increases. Further, when a high frequency voltage is applied to the dielectric part 30, a negative bias potential is generated on the front surface 300 of the dielectric part 30. Thereby, argon ions are attracted to the dielectric part 30. As described above, in the sputter film forming apparatus 1, a large amount of argon ions are generated by the microwave plasma P 1 and the high-frequency plasma P 2, attracted to the dielectric portion 30, and sputtered. For this reason, the film forming speed is high. In addition, unlike magnetron sputtering, the front surface 300 of the dielectric part 30 is sputtered uniformly, so that a thin film having a uniform film thickness can be formed on the surface of the substrate 20. And the problem that the use efficiency of the target in magnetron sputtering is low is also eliminated.

In the sputter deposition apparatus 1, the front surface 300 of the dielectric part 30 is arranged in parallel to the incident direction Y 1 of the microwave that enters the dielectric part 30 from the slot 511. In this case, the microwave is incident along the generated microwave plasma P1. Therefore, the microwave that is the plasma source is likely to propagate to the microwave plasma P1. As a result, a stable microwave plasma P1 is generated even under a low pressure of about 1 Pa. Therefore, according to the sputter deposition apparatus 1, it is possible to form a thin film with high purity while suppressing the mixing of impurities.

In the sputter deposition apparatus 1, the dielectric part 30 is made of quartz. Quartz is difficult to absorb microwaves. For this reason, there is little loss of the microwave used as a plasma source. Moreover, there is little possibility that the dielectric part 30 will be destroyed by the heat generated by the absorption of microwaves.

<Others>
The embodiment of the sputter film forming apparatus of the present invention has been described above. However, the embodiment of the sputter deposition apparatus is not limited to the above embodiment. It is possible to implement various modifications and improvements that can be made by those skilled in the art.

For example, in the above embodiment, the waveguide is inserted from the rear wall of the vacuum vessel and arranged to protrude forward. However, the arrangement form of the waveguide is not particularly limited. For example, you may arrange | position so that it may extend in the left-right direction of a vacuum vessel. Further, the material and arrangement of the slot antenna in the waveguide, the number, shape, arrangement, etc. of the slots are not particularly limited. For example, the material of the slot antenna may be a nonmagnetic metal, and may be stainless steel or brass in addition to aluminum. Moreover, what gave electroconductive plating, such as silver plating, may be used. The number of slots may be one or two or more. The slot may be formed at a position where the electric field is strong. When a plurality of slots are formed, the arrangement of the slots may be one row or two or more rows. Further, the slots may be arranged in a zigzag shape by changing the arrangement angle of the slots. In the above embodiment, microwaves are incident in a direction parallel to the surface of the dielectric part (plasma generation surface). However, the incident direction of the microwave is not particularly limited. For example, microwaves may be incident in a direction perpendicular to the surface of the dielectric part (plasma generation surface).

The material, size, and shape of the dielectric part are not particularly limited. What is necessary is just to determine the material of a dielectric material part suitably according to the kind of thin film to form. From the viewpoint of generating microwave plasma, a material having a low dielectric constant and hardly absorbing microwaves is desirable. For example, alumina, zirconia, aluminum nitride, magnesium oxide and the like are preferable in addition to quartz.

The material, size, and shape of the electrode part are not particularly limited as long as a high-frequency voltage can be applied. Examples of the material for the electrode part include aluminum, stainless steel, brass, copper, and silver-plated products thereof.

In the above embodiment, microwaves having a frequency of 2.45 GHz were used for generating microwave plasma. However, the frequency of the microwave is not particularly limited. Any frequency band may be used as long as it is a frequency band of 300 MHz to 100 GHz. Examples of the frequency band in this range include 8.35 GHz, 1.98 GHz, and 915 MHz.

In the above embodiment, the film was formed under a pressure of 1 Pa. However, the pressure during film formation is not particularly limited. For example, the pressure may be 0.5 Pa or more and 100 Pa or less, more preferably 10 Pa or less. In addition, a pressure of 3 Pa or less is desirable from the viewpoint of suppressing the mixing of impurities and forming a thin film with high purity. Further, the type of gas to be supplied is not particularly limited. In addition to argon, noble gases such as helium (He), neon (Ne), krypton (Kr), and xenon (Xe), nitrogen (N ₂ ), oxygen (O ₂ ), hydrogen (H ₂ ), and the like may be used. Good. Two or more kinds of gases may be mixed and used.

The base material may be appropriately selected according to the application. For example, polyethylene terephthalate (PET) film, polyethylene naphthalate (PEN) film, polyphenylene sulfide (PPS) film, polyamide (PA) 6 film, PA11 film, PA12 film, PA46 film, polyamide MXD6 film, PA9T film, polyimide (PI) ) Film, polycarbonate (PC) film, fluororesin film, ethylene-vinyl alcohol copolymer (EVOH) film, polyvinyl alcohol (PVA) film, polyethylene (PE), polypropylene (PP), polyolefin film such as cycloolefin polymer, etc. Can be used.

The material and shape of the vacuum vessel, the substrate support member, the support plate portion, and the insulating member are not particularly limited. For example, the vacuum vessel may be made of metal, and it is desirable to employ a highly conductive material among them. The table portion of the substrate support member may not be cooled.

Next, the present invention will be described more specifically with reference to examples.

(1) Examples 1 to 3
A silica thin film was formed on the surface of the substrate using the sputter deposition apparatus of the above embodiment. Hereinafter, the reference numerals of the members correspond to those in FIGS. First, the gas inside the vacuum vessel 8 was discharged from the exhaust hole 81, and the internal pressure of the vacuum vessel 8 was set to 8 × 10 ⁻³ Pa. Next, Ar gas was supplied from the gas supply pipe, and the internal pressure of the vacuum vessel 8 was set to 100 Pa. Then, the microwave power source 52 was turned on, and the microwave plasma P1 was generated by the oscillated microwave of 400 W (frequency: 2.45 GHz). Thereafter, the flow rate of Ar gas was reduced, the internal pressure of the vacuum vessel 8 was set to 1 Pa, and the generation state of the microwave plasma P1 was visually confirmed. As a result, it was confirmed that the stable microwave plasma P1 was maintained. Next, the high-frequency power source 42 was turned on, and a high-frequency voltage having an output of 400 W and a frequency of 13.56 MHz was applied to the electrode unit 40 to generate a high-frequency plasma P2. In this state, sputter film formation was performed.

Sputter film formation was performed by changing the distance between the base material 20 and the front surface 300 of the dielectric portion 30 (hereinafter referred to as “base material / target distance”). In Example 1, the base material / target distance was 6 cm. In Example 2, the base material / target distance was 8 cm. In Example 3, the base material / target distance was 10 cm. The film formation time is 8 minutes in all cases.

(2) Comparative Example 1
Sputter deposition was performed in the same manner as in Example 1 except that the microwave plasma P1 was not generated. In this case, the substrate / target distance was 6 cm, and the film formation time was 16 minutes. Table 1 shows the film forming conditions of Examples 1 to 3 and Comparative Example 1.

(3) Evaluation of film formation speed A center point in the left-right direction on the surface of the base material is used as a reference point, a position that is 5 mm apart from the reference point in the left-right direction, and a position that is 10 mm apart in that order from the position. Measurement points were used. And the film-forming speed | rate for every position of the base-material surface was computed from the thickness and the film-forming time of the silica thin film formed in the reference point and the measurement point. In FIG. 3, the film-forming speed | rate for every position of the base-material surface is shown with a graph. In the graph of FIG. 3, the film formation position on the horizontal axis represents the reference point as 0 mm, the distance in the left direction from the reference point is minus, and the distance in the right direction is plus. The substrate is directly opposed to the front surface of the dielectric portion at a film formation position of −50 mm to 50 mm.

As shown in FIG. 3, the film formation rate of Examples 1 to 3 in which film formation was performed while irradiating microwave plasma was significantly higher than the film formation rate of Comparative Example 1. In Examples 1 to 3, the film formation speed at the film formation position −50 mm to 50 mm is substantially constant. That is, it can be seen that a silica thin film having a substantially uniform film thickness is formed at a position facing the front surface of the dielectric portion. From the above, it was confirmed that the sputter deposition apparatus of the present invention can form a thin film at a higher speed than conventional RF sputtering. Moreover, it was confirmed that a thin film with a uniform film thickness can be formed.

The sputter film forming apparatus of the present invention is useful for forming a gas barrier film, a transparent conductive film and the like in a functional resin film used for, for example, a touch panel, a display, LED (light emitting diode) illumination, a solar cell, electronic paper, and the like. .

Claims

A dielectric part as a target;
A rectangular waveguide having a slot antenna for transmitting a microwave and having a slot through which the microwave passes; the slot being covered by the dielectric portion; and by the microwave passing through the slot A microwave plasma generation mechanism for generating plasma on the surface of the dielectric part;
A high-frequency plasma generating mechanism that is disposed on a back surface facing the surface of the dielectric portion and generates plasma at a high frequency;
A base material disposed to face the surface of the dielectric part;
With
A sputter deposition apparatus characterized by forming a thin film by adhering sputtered particles protruding from the dielectric portion to the surface of the substrate.
2. The sputter deposition apparatus according to claim 1, wherein, in the microwave plasma generation mechanism, an incident direction of the microwave passing through the slot and entering the dielectric portion is parallel to the surface of the dielectric portion. .
The sputter deposition apparatus according to claim 1 or 2, wherein the dielectric portion is made of one selected from quartz, alumina, zirconia, aluminum nitride, and magnesium oxide.
The sputter deposition apparatus according to any one of claims 1 to 3, wherein the slot antenna is disposed on an H surface of the rectangular waveguide.
5. The sputter film forming apparatus according to claim 1, wherein the film formation on the substrate is performed under a pressure of 0.5 Pa or more and 100 Pa or less.