WO2014104487A1 - Composition for resist underlayer film and pattern forming method - Google Patents

Abstract

The present invention relates to a composition for a resist underlayer film including a polymer represented by chemical formula 1 and a solvent, and a pattern forming method using the composition for the resist underlayer film.

Description

Resist Underlayer Film Composition and Pattern Forming Method

A composition for resist underlayer films and a pattern formation method.

There is a need to reduce the size of patterns to provide larger amounts of circuitry for a given chip size, as well as in microelectronics as well as in the fabrication of microscopic structures (eg, micromachines, magnetoresist heads, etc.). .

Effective lithographic techniques are necessary to reduce the pattern size. Lithographic influences the fabrication of microscopic structures in terms of directly imaging a pattern on a given substrate, as well as in manufacturing a mask typically used for such imaging.

Typical lithographic processes include forming a patterned resist layer by patterning exposing the radiation-sensitive resist to imaging radiation. The exposed resist layer is then developed with a developer. The pattern is then transferred to the backing material by etching the material in the openings of the patterned resist layer. After the transfer is completed, the remaining resist layer is removed.

However, for some lithographic imaging processes, the resist used does not provide sufficient resistance to subsequent etching steps to effectively transfer the desired pattern to the layer behind the resist. Thus, for example, when an ultra thin resist layer is required, when the backing material to be etched is thick, when a considerable etching depth is required and / or when it is necessary to use a specific etchant for a given backing material, An underlayer film called a resist underlayer is used as an intermediate layer between the resist layer and the back layer which can be patterned by transfer from the patterned resist.

The resist underlayer film may be formed using a resist underlayer film composition that has high etching selectivity, sufficient resistance to multiple etching, and minimizes reflection between the resist layer and the back layer.

The resist underlayer film composition is important for determining exposure characteristics such as resolution, lithography speed and residue of the resist layer. This exposure characteristic is particularly important when performing ultrafine lithography processes using extreme ultraviolet radiation (EUV) lasers.

One embodiment provides a composition for a resist underlayer film capable of improving film density and exposure characteristics.

Another embodiment provides a pattern formation method using the resist underlayer film composition.

According to one embodiment, a composition for a resist underlayer film including a polymer and a solvent including a moiety represented by Formula 1 is provided.

[Formula 1]

In Chemical Formula 1,

R ^1a to R ^1d are each independently hydrogen or a methyl group,

R ² is a substituted or unsubstituted lactone group or a substituted or unsubstituted lactone ester group,

R ³ is a C3 to C30 aromatic group having a hydroxy group,

R ⁴ is a C1 to C30 aliphatic or aromatic group having a halogen atom,

R ⁵ is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or Unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group, halogen group, halogen containing group, or a combination thereof,

satisfies a≥0, b> 0, c> 0, d≥0 and a + b + c + d = 100.

The lactone group, butyrolactonyl group (butyrolactonyl group), valerolactonyl group (valerolactonyl group), 1,3-cyclohexanecarbolactonyl group (1,3-cyclohexanecarbolactonyl group), 2,6-norbonancarbolactone- 5- diary (2,6-norbonanecarbolacton-5-yl group), 7-oxa-2,6-norbonanecarbolactone-5- diary (7-oxa-2,6-norbornanecarbolacton-5-yl group) or Combinations thereof, and the lactone ester group is a butyrolactonyl ester group, a valerolactonyl ester group, a 1,3-cyclohexanecarbolactonyl ester group (1 , 3-cyclohexanecarbolactonyl ester group), 2,6-norbonanecarbolacton-5-yl ester group, 7-oxa-2,6-novbonancarbolactone -5-yl ester group (7-oxa-2,6-norbornanecarbolacton-5-yl ester group) or a combination thereof.

R ⁴ of Formula 1 is a C1 to C30 alkyl group substituted with a plurality of fluorine, C3 to C30 cycloalkyl group substituted with a plurality of fluorine, C6 to C30 aryl group substituted with a plurality of fluorine, C7 to a plurality of fluorine substituted C30 arylalkyl group, C1 to C30 heteroalkyl group substituted with plural fluorine, C2 to C30 heterocycloalkyl group substituted with plural fluorine, C2 to C30 alkenyl group substituted with plural fluorine, C2 to C30 substituted with plural fluorine It may be an alkynyl group or a combination thereof.

A to d in Formula 1 may satisfy 0 ≦ a ≦ 95, 0 <b ≦ 95, 0 <c ≦ 95, and 0 ≦ d ≦ 95, respectively.

The polymer may have a weight average molecular weight of about 3,000 to 500,000.

The polymer may be included in an amount of about 0.01 to 50 parts by weight based on 100 parts by weight of the solvent.

The resist underlayer film composition may further include a crosslinking agent.

The crosslinking agent may include at least one selected from amino resins, glycoluril compounds, bisepoxy compounds, melamine compounds, and melamine derivatives.

The crosslinking agent may be included in an amount of about 0.001 to 3 parts by weight based on 100 parts by weight of the composition for resist underlayer film.

According to another embodiment, a step of providing a material layer on a substrate, applying the resist underlayer film composition on the material layer, and heat treating the resist underlayer film composition to form a resist underlayer film, a photo on the resist underlayer film Forming a resist layer, exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the resist underlayer film using the photoresist pattern and exposing a portion of the material layer; and Providing a pattern forming method comprising etching the exposed portion of the material layer.

Forming the resist underlayer film may be performed by a spin-on-coating method.

The heat treatment of the resist underlayer film composition may be performed at about 150 ° C. to 500 ° C.

Film density and exposure characteristics can be improved.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Unless otherwise defined herein, 'substituted' means that a hydrogen atom in the compound is a halogen atom (F, Cl, Br or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino Groups, hydrazino groups, hydrazono groups, carbonyl groups, carbamyl groups, thiol groups, ester groups, carboxyl groups or salts thereof, sulfonic acid groups or salts thereof, phosphoric acid or salts thereof, C1 to C20 alkyl groups, C2 to C20 alkenyl groups, and C2 to C2 C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C4 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to Substituted with a substituent selected from C15 cycloalkynyl group, C2 to C20 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined herein, "hetero" means containing one to three hetero atoms selected from N, O, S and P.

Hereinafter, a composition for resist underlayer films according to one embodiment is described.

The resist underlayer film composition according to the embodiment includes a polymer and a solvent including a moiety represented by the following Chemical Formula 1.

[Formula 1]

In Chemical Formula 1,

R ^1a to R ^1d are each independently hydrogen or a methyl group,

R ² is a substituted or unsubstituted lactone group or a substituted or unsubstituted lactone ester group,

R ³ is a C3 to C30 aromatic group having a hydroxy group,

R ⁴ is a C1 to C30 aliphatic or aromatic group having a halogen atom,

R ⁵ is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or Unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group, halogen group, halogen containing group or a combination thereof.

A to d are relative molar ratios of each repeating unit, and satisfies a ≧ 0, b> 0, c> 0, d ≧ 0, and a + b + c + d = 100. Within this range, 0 ≦ a ≦ 95, 0 <b ≦ 95, 0 <c ≦ 95, and 0 ≦ d ≦ 95 may be satisfied.

In Formula 1, a horizontal line positioned between two “*” indicates a main chain of a polymer, and “*” indicates a connecting portion of a polymer main chain.

Part represented by the formula (1) is a first repeating unit obtained from a monomer having a lactone group or a lactone ester group, a second repeating unit obtained from a monomer having an aromatic group having a hydroxy group, an agent obtained from a monomer having an aliphatic or aromatic group having a halogen atom A third repeating unit and a fourth repeating unit obtained from the photosensitive monomer.

The first repeating unit includes a side chain having at least one lactone group or lactone ester group.

The lactone group, butyrolactonyl group (butyrolactonyl group), valerolactonyl group (valerolactonyl group), 1,3-cyclohexanecarbolactonyl group (1,3-cyclohexanecarbolactonyl group), 2,6-norbonancarbolactone- 5- diary (2,6-norbonanecarbolacton-5-yl group), 7-oxa-2,6-norbonanecarbolactone-5- diary (7-oxa-2,6-norbornanecarbolacton-5-yl group) or Combinations thereof, and the lactone ester group is a butyrolactonyl ester group, a valerolactonyl ester group, a 1,3-cyclohexanecarbolactonyl ester group (1 , 3-cyclohexanecarbolactonyl ester group), 2,6-norbonanecarbolacton-5-yl ester group, 7-oxa-2,6-novbonancarbolactone -5-yl ester group (7-oxa-2,6-norbornanecarbolacton-5-yl ester group) or a combination thereof.

The lactone groups or lactone ester groups can increase the density of the polymer and increase the adhesion to adjacent membranes. Accordingly, by forming a dense resist underlayer film, it is possible to effectively prevent the penetration of contaminants that may elute from the underlayer, and at the same time improve the adhesion with the photoresist layer positioned on the resist underlayer film.

The second repeating unit includes an aromatic group and an ester group having a hydroxy group in the side chain. The aromatic group may be, for example, a benzene group substituted with at least one hydroxy group, a naphthalene group substituted with at least one hydroxy group, or a biphenyl group substituted with at least one hydroxy group, but is not limited thereto. The aromatic group may be further substituted with a substituent such as fluorine.

The hydroxy group can increase the film density by increasing the crosslinking force, and the aromatic group can improve the film density and etching resistance. The ester group can increase photosensitivity.

The third repeating unit includes an aliphatic or aromatic group and an ester group having at least one halogen atom in the side chain. The halogen atom may be at least one selected from fluorine (F), chlorine (Cl), bromine (Br), and iodine (I), and may include, for example, a plurality. The aliphatic or aromatic group is, for example, C1 to C30 alkyl group substituted with a plurality of fluorine, C3 to C30 cycloalkyl group substituted with a plurality of fluorine, C6 to C30 aryl group substituted with a plurality of fluorine, C7 to C30 substituted with a plurality of fluorine Arylalkyl group, C1 to C30 heteroalkyl group substituted with plural fluorine, C2 to C30 heterocycloalkyl group substituted with plural fluorine, C2 to C30 alkenyl group substituted with plural fluorine, C2 to C30 alky substituted with plural fluorine Or a combination thereof.

The halogen atoms may assist in the generation of secondary electrons upon exposure of the photoresist layer formed on top of the resist underlayer film, thereby improving the exposure characteristics and scum and / or between the resist underlayer film and the photoresist layer. Alternatively, footing can be prevented from occurring. The ester group can increase photosensitivity.

The fourth repeating unit is a part that supplements photosensitivity, and may include two or more kinds, which may be omitted or, if necessary, different types.

In Formula 1, the order of the first repeating unit to the fourth repeating unit may be changed, or may be randomly arranged.

The polymer may include the repeating units as described above, thereby increasing the film density and adhesiveness and improving the exposure characteristics while securing photosensitivity.

The polymer may have a weight average molecular weight of about 3,000 to 500,000. By having the weight average molecular weight in the above range, the solubility and coating property of the “resist underlayer film” composition can be improved. Within this range, the polymer may have a weight average molecular weight of about 5,000 to 200,000.

The solvent is not particularly limited as long as it has sufficient solubility or dispersibility in the polymer, for example, propylene glycol, propylene glycol diacetate, methoxy propanediol, diethylene glycol, diethylene glycol butyl ether, tri (ethylene glycol) mono And at least one selected from methyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone (or 'anone'), ethyl lactate, gamma-butyrolactone, and acetylacetone. .

The polymer may be included in an amount of about 0.01 to 50 parts by weight based on 100 parts by weight of the solvent. By including in the above range, the solubility of the resist underlayer film composition and the coating property at the time of film formation can be improved. It may be included in about 0.3 to 20 parts by weight within the above range.

The resist underlayer film coating composition may further include additives such as a surfactant and a crosslinking agent.

The surfactant may be, for example, alkylbenzenesulfonic acid salt, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like, but is not limited thereto.

The crosslinking agent may crosslink the repeating unit of the polymer by heating, and may include an amino resin such as an etherified amino resin; Glycoluril compounds such as compounds represented by the following formula (A); Bisepoxy compounds, such as a compound represented by following formula (B); Melamine or derivatives thereof such as N-methoxymethyl melamine, N-butoxymethyl melamine or melamine derivatives represented by the following general formula (C); Or mixtures thereof.

[Formula A]

[Formula B]

[Formula C]

The surfactant and the crosslinking agent may be included in an amount of about 0.001 to 3 parts by weight based on 100 parts by weight of the resist underlayer film composition. By including in the said range, solubility and crosslinking property can be ensured, without changing the optical characteristic of the resist underlayer film coating composition.

The resist underlayer film coating composition may not be dissolved in a solvent for resist and / or a developer for forming a resist and may not be mixed with a resist solution to be chemically stable during the process.

A method of forming a pattern using the above-described resist underlayer film composition is described below.

According to one or more exemplary embodiments, a method of forming a pattern includes: providing a material layer on a substrate, applying a composition for forming a resist underlayer film on the material layer, and applying a composition for forming a resist underlayer film to heat the resist underlayer film composition. Forming a resist layer on the resist underlayer film; exposing and developing the resist layer to form a resist pattern; selectively removing the resist underlayer film using the resist pattern and partially removing the material layer Exposing, and etching the exposed portion of the material layer.

The substrate may be, for example, a silicon wafer, a glass substrate or a polymer substrate.

The material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide, silicon nitride, or the like. The material layer can be formed, for example, by chemical vapor deposition.

The resist underlayer film coating composition may be prepared in a solution form and applied by a spin-on-coating method. At this time, the coating thickness of the resist underlayer film coating composition is not particularly limited, but may be applied to, for example, about 80 to 10,000 mm thick.

The heat treatment of the resist underlayer film composition may be performed, for example, at about 150 to 500 ° C. In the heat treatment step, the polymer may be crosslinked.

Exposing the resist layer may be performed using, for example, ArF, KrF or EUV. After exposure, the process may be performed at about &quot; 100 &quot; to 500 &lt; 0 &gt; C.

Etching the exposed portion of the material layer may be performed by dry etching using an etching gas, which may use, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ and mixtures thereof.

The etched material layer may be formed in a plurality of patterns, and the plurality of patterns may vary from a metal pattern, a semiconductor pattern, an insulation pattern, and the like, and may be applied, for example, in various patterns in a semiconductor integrated circuit device.

Through the following examples will be described in more detail the embodiment of the present invention. However, the following examples are merely for illustrative purposes and do not limit the scope of the present invention.

Synthesis Example

Synthesis Example 1

40 mmol of γ-butyrolactonyl methacrylate (GBLMA), 30 mmol of hydroxyquinoline methacrylate and 30 mmol of hexafluoropropanyl methacrylate in a flask under nitrogen atmosphere Methyl ethyl ketone (about 2 times the total weight of solvent and monomer) was added and mixed. Subsequently, 7 mmol of dimethyl-2,2'-azobis (2-methylpropionate) (V601, manufactured by Wako Chemicals) as a polymerization initiator was added to the mixture at a temperature of 80 ° C. for about 4 hours using a syringe, followed by 2 hours. Polymerization was carried out.

After the polymerization was completed, the polymer obtained was slowly precipitated in an excess of hexane solvent, the resulting precipitate was filtered, and the precipitate was dissolved in an appropriate amount of n-hexane / isopropanol (IPA) mixed solvent and stirred. The precipitate obtained was then dried in a vacuum oven maintained at 50 ° C. for about 24 hours to obtain a polymer represented by the following formula (2).

[Formula 2]

(a = 40, b = 30, c = 30)

The yield was 75%, the weight average molecular weight (Mw) of the obtained polymer was 8,800 and dispersion degree (Mw / Mn) was 1.60.

Synthesis Example 2

A polymer represented by the following Chemical Formula 3 was obtained in the same manner as in Synthesis Example 1, except that 30 mmol of perfluorophenyl methacrylate was used instead of 30 mmol of hexafluoropropaneyl methacrylate.

[Formula 3]

(a = 40, b = 30, c = 30)

The yield was 65%, the weight average molecular weight (Mw) of the obtained polymer was 7,350, and dispersion degree (Mw / Mn) was 1.61.

Synthesis Example 3

A polymer represented by the following Chemical Formula 4 was carried out in the same manner as in Synthesis Example 1 except that 40 mmol of α-methylene γ-butyrolactone was used instead of 40 mmol of γ-butyrolactyl methacrylate. Got.

[Formula 4]

(a = 40, b = 30, c = 30)

The yield was 60%, the weight average molecular weight (Mw) of the obtained polymer was 6,740 and dispersion degree (Mw / Mn) was 1.55.

Synthesis Example 4

Synthesis Example 1 except that 40 mmol of α-methylene γ-butyrolactone was used instead of 40 mmol of γ-butyrolactyl methacrylate and 30 mmol of perfluorophenyl methacrylate was used instead of 30 mmol of hexafluoropropanyl methacrylate. Performed in the same manner as in to obtain a polymer represented by the formula

[Formula 5]

(a = 40, b = 30, c = 30)

The yield was 60%, the weight average molecular weight (Mw) of the obtained polymer was 7,500, and dispersion degree (Mw / Mn) was 1.60.

Comparative Synthesis Example 1

The same method as Synthesis Example 1 except that 30 mmol of hydroxylisopropyl methacrylate was used instead of 30 mmol of hydroxyquinoline methacrylate, and 30 mmol of benzyl methacrylate instead of 30 mmol of hexafluoropropanyl methacrylate. The polymer represented by the following Chemical Formula 6 was obtained.

[Formula 6]

(a = 40, b = 30, c = 30)

The yield was 65%, the weight average molecular weight (Mw) of the obtained polymer was 7,500, and dispersion degree (Mw / Mn) was 1.63.

Preparation of resist underlayer film composition

Example 1

0.5 g of the polymer obtained in Synthesis Example 1, 0.125 g of a crosslinking agent (PD1174, manufactured by TCI), and 0.125 g of pyridium p-toluene selphonate (PPTS) were produced from propylene glycol monomethyl ether acetate (PGMEA) / propylene glycol monomethyl ether (PGME). (7/3 v / v) was dissolved in 100 g and filtered to prepare a composition for resist underlayer film.

          [PD1174] [PPTS]

Example 2

A resist composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 2 was used instead of the polymer obtained in Synthesis Example 1.

Example 3

A resist underlayer film composition was prepared in the same manner as in Example 1, except that the polymer obtained in Synthesis Example 3 was used instead of the polymer obtained in Synthesis Example 1.

Example 4

A resist composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 4 was used instead of the polymer obtained in Synthesis Example 1.

Comparative Example 1

A resist composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Comparative Synthesis Example 1 was used instead of the polymer obtained in Synthesis Example 1.

evaluation

Evaluation 1: membrane density

The resist underlayer film composition according to Examples 1 to 4 and Comparative Example 1 was applied onto a silicon substrate by a spin-on coating method, and then heat-treated at 205 ° C. for 1 minute on a hot plate to form a resist underlayer film having a thickness of about 100 nm.

Next, the density of the resist underlayer film was measured. The density of the resist underlayer film was measured using an X-Ray Diffractometer (Model: X'Pert PRO MPD, manufactured by Panalytical (Netherlands)).

The results are shown in Table 1.

Table 1

	Membrane density (g / cm 2)
Example 1	1.37
Example 2	1.39
Example 3	1.41
Example 4	1.43
Comparative Example 1	1.25

Referring to Table 1, it can be seen that the film formed using the resist underlayer film composition according to Examples 1 to 4 has a higher density than the film formed using the resist underlayer film composition according to Comparative Example 1. From this, it can be seen that when the resist underlayer film composition according to Examples 1 to 4 is used, a denser structured film can be formed, thereby effectively preventing the infiltration of contaminants that can elute from the substrate.

Evaluation 2: Exposure Characteristics

The resist underlayer film coating composition according to Examples 1 to 4 and Comparative Example 1 was applied onto a silicon substrate by a spin-on coating method, and then heat-treated at 205 ° C. for 1 minute on a hot plate to form a resist underlayer film having a thickness of about 10 nm. Subsequently, a photoresist solution was applied onto the resist underlayer film by spin-on coating, and then heat-treated at 110 ° C. on a hot plate for 1 minute to form a resist layer. The resist layer was exposed to an acceleration voltage of 100 keV using an e-beam exposure machine (manufactured by Elionix), and then heat-treated at 110 ° C. for 60 seconds. The resist layer was then developed with a 2.38 wt% aqueous tetramethylammonium hydroxide (TMAH) solution and then rinsed with pure water for 15 seconds to form a resist pattern.

The optimum exposure dose, resolution and developing residue of the resist pattern were evaluated.

Here, the exposure amount for resolving a line and space of 0.25 μm in a 1: 1 ratio is called an optimal exposure amount (Eop, μC / cm 2), and the minimum line width of the line and space in the optimum exposure amount is called a resolution. The resolution was measured using a limit resolution (nm) using an electron scanning microscope (SEM) S-9260 (manufactured by Hitachi).

The development residue is based on the dissolution rate (DR) dissolved in a 2.38 wt% aqueous solution of tetramethylammonium hydroxide (TMAH). Observation was carried out with a scanning microscope (SEM) to indicate good case ○, insufficient case △, and poor case (scum).

The results are shown in Table 2.

TABLE 2

	Optimal Exposure Amount (Eop, μC / ㎠)	Resolution (nm)	Phenomenon residue
Example 1	80	40	○
Example 2	85	41	○
Example 3	80	36	○
Example 4	75	35	○
Comparative Example 1	90	50	X

Referring to Table 2, the pattern formed using the resist underlayer film composition according to Examples 1 to 4 is improved compared to the pattern formed using the resist underlayer film composition according to Comparative Example 1, and the optimum exposure dose, resolution, and development residue are all improved. It can be seen that.

From this, it can be seen that both the film density and the exposure characteristics are improved when the resist underlayer film coating composition according to Examples 1 to 4 is used.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

Claims (12)

1. A composition for a resist underlayer film comprising a polymer and a solvent comprising a moiety represented by Formula 1 below:

   [Formula 1]

   

   In Chemical Formula 1,

   R ^1a to R ^1d are each independently hydrogen or a methyl group,

   R ² is a substituted or unsubstituted lactone group or a substituted or unsubstituted lactone ester group,

   R ³ is a C3 to C30 aromatic group having a hydroxy group,

   R ⁴ is a C1 to C30 aliphatic or aromatic group having a halogen atom,

   R ⁵ is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or Unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group, halogen group, halogen-containing group, or a combination thereof,

   satisfies a≥0, b> 0, c> 0, d≥0 and a + b + c + d = 100.
2. In claim 1,

   The lactone group, butyrolactonyl group (butyrolactonyl group), valerolactonyl group (valerolactonyl group), 1,3-cyclohexanecarbolactonyl group (1,3-cyclohexanecarbolactonyl group), 2,6-norbonancarbolactone- 5- diary (2,6-norbonanecarbolacton-5-yl group), 7-oxa-2,6-norbonanecarbolactone-5- diary (7-oxa-2,6-norbornanecarbolacton-5-yl group) or Combinations thereof,

   The lactone ester group, butyrolactonyl ester group (butyrolactonyl ester group), valerolactonyl ester group (valerolactonyl ester group), 1,3-cyclohexanecarbolactonyl ester group (1,3-cyclohexanecarbolactonyl ester group), 2 2,6-norbonanecarbolacton-5-yl ester group, 7-oxa-2,6-novbonancarbolactone-5-yl ester group (7- oxa-2,6-norbornanecarbolacton-5-yl ester group) or a combination thereof

   A composition for resist underlayer film.
3. In claim 1,

   R ⁴ of Formula 1 is a C1 to C30 alkyl group substituted with a plurality of fluorine, C3 to C30 cycloalkyl group substituted with a plurality of fluorine, C6 to C30 aryl group substituted with a plurality of fluorine, C7 to a plurality of fluorine substituted C30 arylalkyl group, C1 to C30 heteroalkyl group substituted with plural fluorine, C2 to C30 heterocycloalkyl group substituted with plural fluorine, C2 to C30 alkenyl group substituted with plural fluorine, C2 to C30 substituted with plural fluorine The composition for resist underlayer film which is an alkynyl group or its combination.
4. In claim 1,

   A to d in the formula (1) is 0 ≤ a ≤ 95, 0 <b ≤ 95, 0 <c ≤ 95 and 0 ≤ d ≤ 95, respectively.
5. In claim 1,

   The polymer is a composition for a resist underlayer film having a weight average molecular weight of 3,000 to 500,000.
6. In claim 1,

   The polymer is a resist underlayer film composition is contained in 0.01 to 50 parts by weight based on 100 parts by weight of the solvent.
7. In claim 1,

   The resist underlayer film composition further comprises a crosslinking agent.
8. In claim 7,

   The crosslinking agent is a composition for a resist underlayer film comprising at least one selected from amino resins, glycoluril compounds, bisepoxy compounds, melamine compounds and melamine derivatives.
9. In claim 7,

   The crosslinking agent is a composition for resist underlayer film is contained in 0.001 to 3 parts by weight based on 100 parts by weight of the composition for resist underlayer film.
10. Providing a layer of material over the substrate,

    Applying a resist underlayer film composition according to any one of claims 1 to 9 on the material layer;

    Heat treating the resist underlayer film composition to form a resist underlayer film;

    Forming a photoresist layer on the resist underlayer film;

    Exposing and developing the photoresist layer to form a photoresist pattern;

    Selectively removing the resist underlayer film using the photoresist pattern and exposing a portion of the material layer; and

    Etching the exposed portion of the material layer

    Pattern forming method comprising a.
11. In claim 10,

    The forming of the resist underlayer film is performed by a spin-on-coating method.
12. In claim 10,

    The heat treatment of the resist underlayer film composition is performed at 150 ° C to 500 ° C.