WO2014094883A1 - Baw component and method for manufacturing a baw component - Google Patents

Baw component and method for manufacturing a baw component Download PDF

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Publication number
WO2014094883A1
WO2014094883A1 PCT/EP2012/076710 EP2012076710W WO2014094883A1 WO 2014094883 A1 WO2014094883 A1 WO 2014094883A1 EP 2012076710 W EP2012076710 W EP 2012076710W WO 2014094883 A1 WO2014094883 A1 WO 2014094883A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
piezoelectric layer
layer
baw
baw component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/076710
Other languages
French (fr)
Inventor
Gilles MOULARD
Paul Muralt
Ramin MATLOUB
Thomas Metzger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to US14/654,480 priority Critical patent/US10079334B2/en
Priority to JP2015548231A priority patent/JP6023351B2/en
Priority to PCT/EP2012/076710 priority patent/WO2014094883A1/en
Priority to DE112012007245.6T priority patent/DE112012007245T5/en
Publication of WO2014094883A1 publication Critical patent/WO2014094883A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making

Definitions

  • BAW bulk acoustic wave
  • BAW components usually comprise a layer stack with a piezo- electric material sandwiched between two electrodes.
  • an acoustic resonance can be formed if means for confining acoustic energy in the stack are present.
  • Mirror systems under the stack or a cavity under the stack are typical means for confining the acoustic energy.
  • band pass filters or band stop filters can be established.
  • BAW components comprise A1N (aluminum nitride) as a piezoelectric material.
  • A1N aluminum nitride
  • the band width of pass bands or stop bands of BAW components are limited. What is needed is a BAW component providing a larger band width.
  • a BAW component comprises a bottom electrode, a top elec ⁇ trode, and a first piezoelectric layer between the bottom electrode and the top electrode.
  • the first piezoelectric layer comprises a piezoelectric material having a higher pie ⁇ zoelectric coefficient c than A1N.
  • the piezoelectric behavior of a BAW component or - more gen ⁇ erally - of a piezoelectric material is mainly determined by piezoelectric parameters. When an electric field is applied to a piezoelectric material, then a deformation of the mate- rial is obtained. Further, when a piezoelectric material is deformed, then an electric charge displacement takes place and an electric field is established.
  • Piezoelectric parame ⁇ ters describe the relationships between deformation and elec ⁇ trical field or between strain and stress.
  • the pie- zoelectric parameters are tensors as the directivity of force or of a force, a field or a deformation is relevant.
  • the piezoelectric coefficient c is the coefficient d33 that describes the relationship between the deformation in a direction parallel to the piezoelectric axis of the piezoelectric material when the electrical field is parallel to the piezoelectric axis.
  • the piezoelectric coefficient c can be a constant of proportion ⁇ ality when the material works in a linear regime.
  • AIN provides good elastic components as AIN is hard enough to allow only relative small deformations. With only small deformations non-linear effects during the oscillation of the piezoelectric material can be neglected.
  • a material being different from AIN is utilized in a BAW component, e.g. to increase the band width, then tradeoffs with deteriorated elastic properties are a re- suit.
  • Sc containing AIN has a higher piezoelectric coefficient and allows a higher piezoelectric coupling coef ⁇ ficient K 2 .
  • Sc doped A1N is softer than A1N and nonlinear effects due to a larger deformation can take place. Further, the insertion loss level of a pass band can be dete- riorated.
  • the BAW component further comprises a sec ⁇ ond piezoelectric layer with a second piezoelectric material different from the piezoelectric material of the first piezo- electric layer.
  • the second piezoelectric material is arranged between the bottom electrode and the first piezoelectric layer .
  • the second piezoelectric material can be chosen according to its piezoelectric properties or according to its elastic properties. Then, the piezoelectric material between the electrodes is a sandwich construction comprising different piezoelectric materials and an improved tradeoff between electric properties and elastic properties can be obtaind. However, manufacturing steps are more complex.
  • the second piezoelectric material can comprise A1N having good elastic properties.
  • the BAW component comprises a layer with a second piezoelectric material and the first piezoelectric layer is arranged on the second piezoelectric material.
  • the mismatch of lattice parameters of the first piezoelectric layer' s material and the second piezoelectric layer' s mate ⁇ rial is less than 10%.
  • the lattice mismatch can be in the range of 2 - 5%.
  • the doping level can be in the range of 1% to 25%, resulting in a lattice mismatch that is small enough to allow Sc doped A1N to be grown on the lower A1N layer with a good layer quality. In one example the doping level can be in the range of 5% to 7%.
  • the second piezoelectric layer has a (002) texturation at the interface towards the first piezoelectric layer .
  • the second piezoelectric material is a seed layer for the first piezoelectric material. It was found that Sc doped A1N grown on an A1N seed layer with a (002) texturation has a good crystalline quality and allows resona- tors with a high quality factor Q.
  • the (002) orientation can be easily obtained giving more de ⁇ grees of freedom in depositing processes.
  • Sputtering can be utilized to deposit electrode or piezoelectric material lay- ers .
  • the BAW component comprises a third piezo ⁇ electric layer.
  • the third piezoelectric layer is arranged be ⁇ tween the first piezoelectric layer and the top electrode.
  • the third piezoelectric layer can have a piezoelectric mate ⁇ rial that is different from the piezoelectric material of the first piezoelectric layer and can be chosen according to elastic or piezoelectric properties.
  • a threefold piezoelectric laminate between the electrodes can be obtained and fulfills modern requirements related to BAW components or RF filters.
  • the global piezoelectric coeffi ⁇ cient can be increased relative to the piezoelectric coeffi ⁇ cient of A1N. Utilizing the combination of A1N and the first material is a possibility to limit the reduction of the qual ⁇ ity factor of the respective resonator.
  • a method for manufacturing a BAW component comprises the steps :
  • the method further comprises the step:
  • the first piezoelectric ma ⁇ terial comprises Sc doped A1N.
  • the first piezoelectric mate ⁇ rial can be deposited at a rate R with 5 ⁇ / ⁇ ⁇ R ⁇ 15 ⁇ /h. But higher deposition rates are also possible.
  • the first piezoelectric material is deposited at a temperature T with 50 °C ⁇ T ⁇ 400 °C. Especially, it is possible to use a temperature between 150° C and 300° C. It was found that the Al/Sc nitride material system, especially an A1N - ScAIN - A1N laminate - provides good elastic and electric properties and can be deposited at a high rate and at a large
  • FIG. 1 shows a BAW component with a piezoelectric layer between two electrodes
  • FIG. 2 shows the relationship between an electrical field an a mechanical distortion of a piezoelectric mate ⁇ rial, shows a BAW component comprising three
  • piezoelectric layers between two electrodes shows a BAW component with a second piezoelectric layer between the first piezoelectric layer and a bottom electrode, shows a BAW component with a third piezoelectric layer between the first piezoelectric layer and top electrode,
  • FIG. 6 shows a BAW resonator with an acoustic mirror
  • FIG. 1 shows a BAW component BAWC comprising a bottom elec ⁇ trode BE and a top electrode TE . Between the two electrodes, a first piezoelectric layer PLl is arranged.
  • the first piezo ⁇ electric layer PLl comprises a piezoelectric material having a higher piezoelectric coefficient c than A1N.
  • FIG. 2 shows two versions of a piezoelectric material being arranged between two electrodes.
  • An electric voltage is ap ⁇ plied to the electrodes resulting in an electric field caus- ing the piezoelectric material to expand in a vertical direc ⁇ tion which may be a direction parallel to the piezoelectric axis.
  • a reverse voltage i.e. the same voltage with different sign, is applied to the piezoelectric material as shown in the piezoelectric material on the right-hand side.
  • the electrical field causes the piezoelectric material to shrink in a vertical direction.
  • FIG. 3 shows a BAW component comprising a second piezoelec ⁇ tric layer PL2 between the first piezoelectric layer PLl and the bottom electrode. Further, a third piezoelectric layer
  • the PL3 is arranged between the first piezoelectric layer PLl and the top electrode TE .
  • the materials of the piezoelectric layer and the respective layer thicknesses can be chosen to provide an excellent BAW component as the materials and the thicknesses can be chosen to fulfill elastic and electric re ⁇ quirements .
  • FIG. 4 shows an embodiment of a BAW component where the third piezoelectric layer PL3 shown in FIG. 3 is omitted.
  • FIG. 5 shows the BAW component where the second piezoelectric layer PL2 of FIG. 3 is omitted.
  • FIG. 6 shows a BAW component BAWC where an acoustic mirror AM is arranged between the layer stack with the electrodes and the piezoelectric material on one side and a carrier sub ⁇ strate CS on the other side.
  • the acoustic mirror AM is a pos- sibility to confine acoustic energy in the stack so that a resonance can be established.
  • the acoustic mirror AM can com ⁇ prise two or more layers with alternating acoustic impedance.
  • a BAW component or a method for manufacturing BAW components are not limited to the embodiments described in the specifi ⁇ cation or shown in the figures. Components comprising further elements such as layers or materials or methods comprising further deposition steps or structuring steps or combinations thereof are also comprised by the present invention.
  • AM acoustic mirror

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A BAW component and a method for manufacturing a BAW component are provided. The component comprises a bottom electrode, a top electrode and a first piezoelectric material between the bottom electrode and the top electrode, the material having a higher piezoelectric coefficient than AlN.

Description

Description
BAW component and method for manufacturing a BAW component The present invention refers to BAW components (BAW = bulk acoustic wave), e.g. for RF filters, and to methods for manu¬ facturing BAW components.
BAW components usually comprise a layer stack with a piezo- electric material sandwiched between two electrodes. When an RF signal is applied to the electrodes, an acoustic resonance can be formed if means for confining acoustic energy in the stack are present. Mirror systems under the stack or a cavity under the stack are typical means for confining the acoustic energy. Utilizing acoustic resonances, band pass filters or band stop filters can be established.
Conventional BAW components comprise A1N (aluminum nitride) as a piezoelectric material. However, the band width of pass bands or stop bands of BAW components are limited. What is needed is a BAW component providing a larger band width.
Therefore, it is an object of the invention to provide a BAW component that allows a larger band width and to provide a method for manufacturing such a BAW component.
A BAW component comprises a bottom electrode, a top elec¬ trode, and a first piezoelectric layer between the bottom electrode and the top electrode. The first piezoelectric layer comprises a piezoelectric material having a higher pie¬ zoelectric coefficient c than A1N. The piezoelectric behavior of a BAW component or - more gen¬ erally - of a piezoelectric material is mainly determined by piezoelectric parameters. When an electric field is applied to a piezoelectric material, then a deformation of the mate- rial is obtained. Further, when a piezoelectric material is deformed, then an electric charge displacement takes place and an electric field is established. Piezoelectric parame¬ ters describe the relationships between deformation and elec¬ trical field or between strain and stress. Usually, the pie- zoelectric parameters are tensors as the directivity of force or of a force, a field or a deformation is relevant.
It is thus possible that the piezoelectric coefficient c is the coefficient d33 that describes the relationship between the deformation in a direction parallel to the piezoelectric axis of the piezoelectric material when the electrical field is parallel to the piezoelectric axis. In particular, the piezoelectric coefficient c can be a constant of proportion¬ ality when the material works in a linear regime.
It was found that a BAW component having a piezoelectric ma¬ terial with a higher piezoelectric coefficient c than AIN allows larger band widths. However, AIN provides good elastic components as AIN is hard enough to allow only relative small deformations. With only small deformations non-linear effects during the oscillation of the piezoelectric material can be neglected. Thus, when a material being different from AIN is utilized in a BAW component, e.g. to increase the band width, then tradeoffs with deteriorated elastic properties are a re- suit.
In one embodiment, the BAW component comprises Sc (Sc = scan¬ dium) doped AIN. Sc containing AIN has a higher piezoelectric coefficient and allows a higher piezoelectric coupling coef¬ ficient K2. However, Sc doped A1N is softer than A1N and nonlinear effects due to a larger deformation can take place. Further, the insertion loss level of a pass band can be dete- riorated.
In one embodiment, the BAW component further comprises a sec¬ ond piezoelectric layer with a second piezoelectric material different from the piezoelectric material of the first piezo- electric layer. The second piezoelectric material is arranged between the bottom electrode and the first piezoelectric layer .
The second piezoelectric material can be chosen according to its piezoelectric properties or according to its elastic properties. Then, the piezoelectric material between the electrodes is a sandwich construction comprising different piezoelectric materials and an improved tradeoff between electric properties and elastic properties can be obtaind. However, manufacturing steps are more complex. In particular, the second piezoelectric material can comprise A1N having good elastic properties.
In one embodiment, the BAW component comprises a layer with a second piezoelectric material and the first piezoelectric layer is arranged on the second piezoelectric material. The mismatch of lattice parameters of the first piezoelectric layer' s material and the second piezoelectric layer' s mate¬ rial is less than 10%. The lattice mismatch can be in the range of 2 - 5%. When the first piezoelectric layer's
material is Sc doped A1N and the second piezoelectric layer' s material is A1N, then both materials have a similar lattice. Due to the different sizes of Sc atoms and of Al atoms, a lattice mismatch, however, is present. The doping level can be in the range of 1% to 25%, resulting in a lattice mismatch that is small enough to allow Sc doped A1N to be grown on the lower A1N layer with a good layer quality. In one example the doping level can be in the range of 5% to 7%.
In one embodiment, the second piezoelectric layer has a (002) texturation at the interface towards the first piezoelectric layer .
It is possible that the second piezoelectric material is a seed layer for the first piezoelectric material. It was found that Sc doped A1N grown on an A1N seed layer with a (002) texturation has a good crystalline quality and allows resona- tors with a high quality factor Q.
The (002) orientation can be easily obtained giving more de¬ grees of freedom in depositing processes. Sputtering can be utilized to deposit electrode or piezoelectric material lay- ers .
In one embodiment, the BAW component comprises a third piezo¬ electric layer. The third piezoelectric layer is arranged be¬ tween the first piezoelectric layer and the top electrode.
The third piezoelectric layer can have a piezoelectric mate¬ rial that is different from the piezoelectric material of the first piezoelectric layer and can be chosen according to elastic or piezoelectric properties. In particular in combi- nation with a second piezoelectric layer between the first piezoelectric layer and the bottom electrode, a threefold piezoelectric laminate between the electrodes can be obtained and fulfills modern requirements related to BAW components or RF filters.
Whether a further piezoelectric layer is below or above the first piezoelectric layer, the global piezoelectric coeffi¬ cient can be increased relative to the piezoelectric coeffi¬ cient of A1N. Utilizing the combination of A1N and the first material is a possibility to limit the reduction of the qual¬ ity factor of the respective resonator.
A method for manufacturing a BAW component comprises the steps :
- providing a bottom electrode (BE) ,
- depositing a first piezoelectric material having a higher piezoelectric coefficient c than A1N onto or above the bottom electrode (BE) ,
- structuring a top electrode (TE) onto or above the first piezoelectric material. In one embodiment, the method further comprises the step:
- depositing a second piezoelectric material onto or above the bottom electrode before depositing the first piezoelec¬ tric material.
In one embodiment of the method, the first piezoelectric ma¬ terial comprises Sc doped A1N. The first piezoelectric mate¬ rial can be deposited at a rate R with 5 μιη/η < R < 15 μιη/h. But higher deposition rates are also possible. The first piezoelectric material is deposited at a temperature T with 50 °C ≤ T ≤ 400 °C. Especially, it is possible to use a temperature between 150° C and 300° C. It was found that the Al/Sc nitride material system, especially an A1N - ScAIN - A1N laminate - provides good elastic and electric properties and can be deposited at a high rate and at a large
temperature interval which makes methods for manufacturing BAW components highly efficient.
Examples and working principles are shown in the schematic figures .
Short description of the figures
FIG. 1 shows a BAW component with a piezoelectric layer between two electrodes,
FIG. 2 shows the relationship between an electrical field an a mechanical distortion of a piezoelectric mate¬ rial, shows a BAW component comprising three
piezoelectric layers between two electrodes, shows a BAW component with a second piezoelectric layer between the first piezoelectric layer and a bottom electrode, shows a BAW component with a third piezoelectric layer between the first piezoelectric layer and top electrode,
FIG. 6 shows a BAW resonator with an acoustic mirror
Detailed description FIG. 1 shows a BAW component BAWC comprising a bottom elec¬ trode BE and a top electrode TE . Between the two electrodes, a first piezoelectric layer PLl is arranged. The first piezo¬ electric layer PLl comprises a piezoelectric material having a higher piezoelectric coefficient c than A1N.
FIG. 2 shows two versions of a piezoelectric material being arranged between two electrodes. An electric voltage is ap¬ plied to the electrodes resulting in an electric field caus- ing the piezoelectric material to expand in a vertical direc¬ tion which may be a direction parallel to the piezoelectric axis. In contrast, a reverse voltage, i.e. the same voltage with different sign, is applied to the piezoelectric material as shown in the piezoelectric material on the right-hand side. The electrical field causes the piezoelectric material to shrink in a vertical direction.
FIG. 3 shows a BAW component comprising a second piezoelec¬ tric layer PL2 between the first piezoelectric layer PLl and the bottom electrode. Further, a third piezoelectric layer
PL3 is arranged between the first piezoelectric layer PLl and the top electrode TE . The materials of the piezoelectric layer and the respective layer thicknesses can be chosen to provide an excellent BAW component as the materials and the thicknesses can be chosen to fulfill elastic and electric re¬ quirements .
FIG. 4 shows an embodiment of a BAW component where the third piezoelectric layer PL3 shown in FIG. 3 is omitted.
FIG. 5 shows the BAW component where the second piezoelectric layer PL2 of FIG. 3 is omitted. FIG. 6 shows a BAW component BAWC where an acoustic mirror AM is arranged between the layer stack with the electrodes and the piezoelectric material on one side and a carrier sub¬ strate CS on the other side. The acoustic mirror AM is a pos- sibility to confine acoustic energy in the stack so that a resonance can be established. The acoustic mirror AM can com¬ prise two or more layers with alternating acoustic impedance.
A BAW component or a method for manufacturing BAW components are not limited to the embodiments described in the specifi¬ cation or shown in the figures. Components comprising further elements such as layers or materials or methods comprising further deposition steps or structuring steps or combinations thereof are also comprised by the present invention.
List of reference signs
AM: acoustic mirror
BAWC: BAW component
BE : bottom electrode
CS : carrier substrate
PL1 : first piezoelectric layer
PL2 : second piezoelectric layer
PL3 : third piezoelectric layer
TE : top electrode

Claims

Claims
1. A BAW component (BAWC) , comprising
- a bottom electrode (BE) , a top electrode (TE) , and a first piezoelectric layer (PL1) between the bottom electrode (BE) and the top electrode (TE) , wherein
- the first piezoelectric layer (PL1) comprises a
piezoelectric material having a higher piezoelectric
coefficient c than A1N.
2. The BAW component (BAWC) of the previous claim, wherein the piezoelectric material comprises Sc doped A1N.
3. The BAW component (BAWC) of one the previous claims,
- further comprising a second piezoelectric layer (PL2) with a second piezoelectric material different from the
piezoelectric material of the first piezoelectric layer
( PL1 ) , wherein
- the second piezoelectric material is arranged between the bottom electrode (BE) and the first piezoelectric layer
(PL1) .
4. The BAW component (BAWC) of the previous claim, wherein the lattice parameter mismatch of the first piezoelectric layer's (PL1) material and the second piezoelectric layer's (PL2) material is less than 10%.
5. The BAW component (BAWC) of the previous claim, wherein the second piezoelectric layer (PL2) has a (002) texturation at the interface towards the first piezoelectric layer (PL1) .
6. The BAW component (BAWC) of one the previous claims,
- further comprising a third piezoelectric layer (PL3) , wherein
- the third piezoelectric layer's (PL3) material is arranged between the first piezoelectric layer (PL1) and the top electrode (TE) .
7. Method for manufacturing a BAW component (BAWC),
comprising the steps:
- providing a bottom electrode (BE) ,
- depositing a first piezoelectric material having a higher piezoelectric coefficient c than A1N onto or above the bottom electrode (BE) ,
- structuring a top electrode (TE) onto or above the first piezoelectric material.
8. The method of the previous claim, further comprising the step :
- depositing a second piezoelectric material onto or above the bottom electrode (BE) before depositing the first piezoelectric material.
9. The method of the previous claim, wherein
- the first piezoelectric material comprises Sc doped A1N, - the first piezoelectric material is deposited at a rate R with 5 μιη/η < R < 15 μιη/η,
- the first piezoelectric material is deposited at a
temperature T with 50° C < T < 400° C.
PCT/EP2012/076710 2012-12-21 2012-12-21 Baw component and method for manufacturing a baw component Ceased WO2014094883A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/654,480 US10079334B2 (en) 2012-12-21 2012-12-21 BAW component and method for manufacturing a BAW component
JP2015548231A JP6023351B2 (en) 2012-12-21 2012-12-21 BAW component and method for manufacturing BAW component
PCT/EP2012/076710 WO2014094883A1 (en) 2012-12-21 2012-12-21 Baw component and method for manufacturing a baw component
DE112012007245.6T DE112012007245T5 (en) 2012-12-21 2012-12-21 BAW device and method for manufacturing a BAW device

Applications Claiming Priority (1)

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Publications (1)

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WO2014094883A1 true WO2014094883A1 (en) 2014-06-26

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