JP5190841B2 - Piezoelectric thin film, piezoelectric body and manufacturing method thereof, and piezoelectric resonator, actuator element, and physical sensor using the piezoelectric thin film - Google Patents

Piezoelectric thin film, piezoelectric body and manufacturing method thereof, and piezoelectric resonator, actuator element, and physical sensor using the piezoelectric thin film Download PDF

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JP5190841B2
JP5190841B2 JP2008098480A JP2008098480A JP5190841B2 JP 5190841 B2 JP5190841 B2 JP 5190841B2 JP 2008098480 A JP2008098480 A JP 2008098480A JP 2008098480 A JP2008098480 A JP 2008098480A JP 5190841 B2 JP5190841 B2 JP 5190841B2
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thin film
scandium
piezoelectric
aluminum nitride
piezoelectric thin
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JP2009010926A (en
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守人 秋山
敏浩 蒲原
直広 上野
加納  一彦
明彦 勅使河原
竹内  幸裕
伸章 川原
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独立行政法人産業技術総合研究所
株式会社デンソー
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08Piezo-electric or electrostrictive devices
    • H01L41/09Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H01L41/0973Membrane type

Description

  The present invention relates to a piezoelectric body and a piezoelectric thin film, and more particularly to a piezoelectric body in which scandium is added to aluminum nitride, and a piezoelectric thin film in which scandium is added to an aluminum nitride thin film.

  Devices using the piezoelectric phenomenon are used in a wide range of fields, and their use is expanding in portable devices such as mobile phones that are strongly required to be small and save power. As an example, IF (Intermediate Frequency) and RF (Radio Frequency) filters can be mentioned. Specific examples of the IF and RF filters include a SAW filter that is a filter using a surface acoustic wave resonator (SAWR).

  The SAW filter is a filter using a resonator that uses an acoustic wave transmitted on a solid surface, and meets the severe demands of users by improving the design and production technology. However, the SAW filter is approaching the limit of improvement in characteristics as the frequency of use increases.

  Therefore, an FBAR filter using a thin film bulk acoustic resonator (FBAR), which is one of RF-MEMS (Radio Frequency-Micro Electro Mechanical System) devices, as a new filter to replace the SAW filter. Development is underway.

  RF-MEMS is a technology that has attracted attention in recent years. MEMS, which is a technology for manufacturing devices such as ultra-small actuators, sensors, and resonators by making mechanical microstructures mainly on a semiconductor substrate, is an RF front. It is applied to the end.

  An FBAR filter which is one of RF-MEMS devices is a filter using a resonator using a thin film thickness longitudinal vibration mode exhibiting piezoelectric response. In other words, it is a filter using a resonator that uses a phenomenon in which a piezoelectric thin film causes a longitudinal vibration in the thickness of an input high-frequency electric signal, and the vibration resonates in the thickness direction of the thin film. Is possible. The FBAR filter having such characteristics has low loss and enables operation in a wide band, while realizing further downsizing and power saving of portable devices.

  Also, RF-MEMS capacitors and RF-MEMS switches, which are RF-MEMS devices other than FBAR filters, achieve low loss, high isolation, and low distortion in the high frequency band by utilizing the piezoelectric phenomenon. Yes.

As piezoelectric materials of the piezoelectric thin film used for such RF-MEMS devices, aluminum nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO 3 ), and lead zirconate titanate (Pb (Zr) , Ti) O 3 ; PZT) and the like. Among these, piezoelectric thin films provided with aluminum nitride, in particular, have good acoustic wave propagation speed, Q value, and frequency temperature coefficient characteristics, so that they can be used as piezoelectric thin film resonator piezoelectric materials for filters in the high frequency band. It is known that it is very suitable (for example, refer patent document 1).

Patent Document 1 discloses that resonance characteristics are improved by adding a third component such as an alkaline earth metal and / or a rare earth element to an aluminum nitride thin film.
JP 2002-344279 A (published November 29, 2002) V. Ranjan et al., PHYSICAL REVIEW LETTERS, 90, 25, 257602 (2003) V. Ranjan et al., PHYSICAL REVIEW B, 72, 085315 (2005)

However, the aluminum nitride thin film has a lower piezoelectric constant than other piezoelectric materials. Specifically, the piezoelectric constant d 33 of the aluminum nitride thin film is about 5.1 to 6.7 pC / N, whereas the piezoelectric constant d 33 of the zinc oxide thin film is about 9.9 to 12.4 pC / N. The piezoelectric constant d 33 of the lithium niobate thin film is about 6 to 12 pC / N, and the piezoelectric constant d 33 of the lead zirconate titanate thin film is about 97 to 100 pC / N. That is, the aluminum nitride thin film has only a piezoelectric constant of about 1/2 to 1/20 of other piezoelectric materials.

  Therefore, for example, when a piezoelectric thin film including an aluminum nitride thin film is used in a device such as an RF-MEMS device, an operating voltage higher than that of other piezoelectric materials such as zinc oxide is required. That is, in a device including a piezoelectric thin film including aluminum nitride, for example, an RF-MEMS device, it is difficult to save power.

  In addition, since the piezoelectric constant is low, for example, when a piezoelectric thin film including aluminum nitride is used for an actuator, the actuator is used more than an actuator using a piezoelectric thin film including a piezoelectric material having a high piezoelectric constant such as zinc oxide. There arises a problem that the movable region becomes narrow, and when the piezoelectric thin film is used for a filter, there arises a problem that loss is increased. That is, the low piezoelectric constant of aluminum nitride is one factor that hinders downsizing and performance improvement in devices including a piezoelectric thin film including aluminum nitride.

  The present invention has been made in view of the above problems, and its main object is to provide a piezoelectric thin film having an aluminum nitride thin film with improved piezoelectric response.

  As a method for improving the piezoelectric response of the piezoelectric material, Non-Patent Document 1 discloses that the piezoelectric response can be improved by distorting the metastable phase hexagonal scandium nitride (ScN). It is suggested from the results calculated based on computational science. Further, in Non-Patent Document 2, it is calculated based on computational science that the piezoelectric response can be improved by adding scandium (Sc) to gallium nitride (GaN) and indium nitride (InN). It is suggested from.

  The present inventors considered that by adding an appropriate amount of scandium to aluminum nitride, the crystal structure of aluminum nitride can be changed and the piezoelectric response can be improved, and as a result of earnestly examining the addition amount of scandium, The present invention has been completed.

  Non-Patent Documents 1 and 2 do not actually distort the crystal lattice of scandium nitride or add scandium to gallium nitride and indium nitride, but are the results of simulation in virtual space.

  Further, gallium nitride and indium nitride are materials that are attracting a great deal of attention in light emitting devices such as light emitting diodes, and researches are being actively conducted to realize miniaturization and power saving of the light emitting devices. On the other hand, aluminum nitride with a wide band gap does not emit light in visible light, so it is used as a buffer layer for using gallim nitride as a light-emitting device, and almost no research has been conducted to improve the piezoelectric response of aluminum nitride. Absent. That is, in Non-Patent Documents 1 and 2, nothing is described about improvement of piezoelectric response by adding scandium to aluminum nitride.

  The present invention has been completed based on such novel findings, and includes the following inventions.

  In order to solve the above problems, a piezoelectric thin film according to the present invention is a piezoelectric thin film including an aluminum nitride thin film containing a rare earth element, the rare earth element being scandium, and the number of scandium atoms. When the total amount of aluminum atoms in the aluminum nitride thin film is 100 atomic%, the scandium content is in the range of 0.5 to 50 atomic%.

  By making the content of scandium contained in the aluminum nitride thin film within the above range, the piezoelectric response is improved without losing the characteristics of the elastic wave propagation velocity, Q value, and frequency temperature coefficient of the aluminum nitride thin film. be able to.

  As a result, the piezoelectric thin film according to the present invention has an effect that cannot be achieved by a conventional piezoelectric thin film including aluminum nitride. Specifically, when a piezoelectric thin film including aluminum nitride having the above structure is provided in a device, for example, an RF-MEMS device, an operation at a low voltage can be realized. When the device is an actuator, the movable region can be enlarged if the voltage is the same, and the operating voltage can be reduced if the device is the movable region in the same range. Furthermore, when the device is a filter, insertion loss can be reduced. Therefore, the device including the piezoelectric thin film can be reduced in size and power consumption, and the performance can be improved. Further, when the piezoelectric thin film according to the present invention is applied to a physical sensor such as a gyro sensor, a pressure sensor, and an acceleration sensor, the detection sensitivity can be improved.

  The piezoelectric thin film according to the present invention is further a piezoelectric thin film made of an aluminum nitride thin film containing a rare earth element, wherein the rare earth element is scandium, and the number of scandium atoms and the aluminum in the aluminum nitride thin film. When the total amount with respect to the number of atoms is 100 atomic%, the scandium content is preferably in the range of 0.5 to 35 atomic% or 40 to 50 atomic%.

  According to said structure, a piezoelectric thin film consists of an aluminum nitride thin film which contains scandium in 0.5-35 atomic% or 40-50 atomic%. In particular, when an aluminum nitride thin film containing scandium is directly formed on a substrate, by setting the scandium content contained in the aluminum nitride thin film within the above range, the propagation speed of elastic waves of the aluminum nitride thin film, Q The piezoelectric response can be improved without losing the characteristics of the value and the frequency temperature coefficient.

  In the piezoelectric thin film according to the present invention, the aluminum nitride thin film is provided on a substrate, and at least one intermediate layer is provided between the aluminum nitride thin film and the substrate. preferable.

  By providing the intermediate layer between the substrate and the aluminum nitride thin film, it is possible to suppress a decrease in piezoelectric response that occurs when the intermediate layer is not provided. That is, it is possible to suppress a decrease in piezoelectric response that occurs when the scandium concentration is larger than 35 atomic% and smaller than 40 atomic%.

  This eliminates the need for strict management of the composition, so that an aluminum nitride thin film with improved piezoelectric response can be easily obtained.

  In the piezoelectric thin film according to the present invention, when the total amount of the scandium atoms and the number of aluminum atoms in the aluminum nitride thin film is 100 atomic%, the scandium content is 15 to 45 atomic%. It is preferable to be within the range.

  According to the above configuration, even when the intermediate layer is provided between the substrate and the aluminum nitride thin film. The piezoelectric responsiveness can be improved without losing the characteristics of the propagation speed, Q value, and frequency temperature coefficient of the elastic wave of the aluminum nitride thin film.

  In the piezoelectric thin film according to the present invention, the content of the scandium is in the range of 10 to 35 atomic% when the total amount of the scandium atoms and the aluminum atoms is 100 atomic%. It is preferable.

  Surface roughness can be reduced by making the content rate of the scandium contained in an aluminum nitride thin film into the said range. That is, the uniformity of the film thickness of the piezoelectric thin film can be improved.

  In general, the resonance frequency of a filter or the like is determined by the thickness of the film thickness. Therefore, by using the piezoelectric thin film according to the present invention for, for example, a SAW device, the accuracy of the film thickness can be improved and the propagation loss can be suppressed. As a result, the SAW filter with less insertion loss and reduced noise can be realized. Further, by reducing the surface roughness of the piezoelectric thin film, the grain boundaries in the polycrystal can be eliminated, and the piezoelectric thin film can be densified. As a result, when the piezoelectric thin film according to the present invention is used in, for example, an FBAR filter, an effect of preventing a short circuit when the aluminum nitride thin film is sandwiched between electrodes can be achieved.

  In the piezoelectric thin film according to the present invention, the scandium content is further in the range of 40 to 50 atomic% when the total amount of the scandium atoms and the aluminum atoms is 100 atomic%. It is preferable.

  By setting the content of scandium contained in the aluminum nitride thin film within the above range, the piezoelectric response can be further improved without losing the characteristics of the aluminum nitride thin film.

  As a result, the piezoelectric thin film according to the present invention has a further effect that cannot be achieved by the conventional piezoelectric thin film including aluminum nitride. Specifically, when a piezoelectric thin film including aluminum nitride having the above-described configuration is provided in a device, for example, an RF-MEMS device, operation at a further lower voltage can be realized. Further, when the device is an actuator, the movable region can be further expanded, and when the device is a filter, the insertion loss can be further reduced. Therefore, it is possible to achieve further miniaturization and power saving in a device including the piezoelectric thin film, and further improve the performance. In addition, when the piezoelectric thin film according to the present invention is applied to a physical sensor such as a gyro sensor, a pressure sensor, or an acceleration sensor, the detection sensitivity can be further improved.

  In the piezoelectric thin film according to the present invention, the intermediate layer is preferably an aluminum nitride thin film having a different content of titanium nitride or scandium.

  In order to solve the above problems, the piezoelectric body according to the present invention is a piezoelectric body including an aluminum nitride containing a rare earth element, wherein the rare earth element is scandium, and the number of scandium atoms and the aluminum nitride. When the total amount with respect to the number of aluminum atoms is 100 atomic%, the scandium content is in the range of 0.5 to 50 atomic%.

  According to said structure, there exists an effect similar to the piezoelectric material thin film provided with the aluminum nitride thin film whose content rate of scandium exists in the range of 0.5-50 atomic%.

  The piezoelectric body according to the present invention is further a piezoelectric body made of aluminum nitride containing a rare earth element, wherein the rare earth element is scandium, and the number of scandium atoms and the number of aluminum atoms in the aluminum nitride When the total amount is 100 atomic%, the scandium content is preferably in the range of 0.5 to 35 atomic% or 40 to 50 atomic%.

  According to said structure, there exists an effect similar to the piezoelectric material which consists of an aluminum nitride thin film whose content rate of a scandium exists in the range of 0.5-35 atomic% or 40-50 atomic%.

In order to solve the above problems, a method for manufacturing a piezoelectric thin film according to the present invention is a method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing a rare earth element on a substrate, and includes an atmosphere containing at least nitrogen gas Below, it is characterized by including the sputtering process which sputters aluminum and a scandium simultaneously, and the power density of the said scandium in the said sputtering process exists in the range of 0.05-10 W / cm < 2 >.

  By sputtering scandium with an electric power density in the above range in an atmosphere containing at least nitrogen gas, the scandium content of the aluminum nitride thin film can be made 0.5 to 45 atomic%. Therefore, the same effect as that of the piezoelectric thin film including the aluminum nitride thin film having a scandium content of 0.5 to 45 atomic% is achieved.

The method for manufacturing a piezoelectric thin film according to the present invention further includes a sputtering step in which the piezoelectric thin film is made of the aluminum nitride thin film, and simultaneously sputtering aluminum and scandium on the substrate, and It is preferable that the power density of the scandium in the sputtering step is in the range of 0.05 to 6.5 W / cm 2 or 8.5 to 10 W / cm 2 .

  By sputtering scandium with a power density in the above range, the scandium content of the aluminum nitride thin film can be in the range of 0.5 to 35 atomic% or 40 to 45 atomic%. Therefore, the same effect as that of the piezoelectric thin film including the aluminum nitride thin film having a scandium content in the range of 0.5 to 35 atomic% or 40 to 45 atomic% is achieved.

The method for manufacturing a piezoelectric thin film according to the present invention further includes an intermediate layer forming step of forming an intermediate layer on the substrate before the sputtering step, and the power density of the scandium in the sputtering step is 0. It is preferable to be within the range of 0.05 to 10 W / cm 2 .

  By sputtering scandium at a power density in the above range, the scandium content of the aluminum nitride thin film formed on the intermediate layer can be in the range of 15 to 45 atomic%. Thus, the same effect as that of the aluminum nitride thin film formed on the intermediate layer and containing scandium in the range of 15 to 45 atomic% is obtained.

In the method for manufacturing a piezoelectric thin film according to the present invention, it is preferable that the power density in the sputtering step is in a range of 2 to 6.5 W / cm 2 .

  By sputtering scandium with a power density in the above range, the scandium content of the aluminum nitride thin film can be in the range of 10 to 35 atomic%. Therefore, the same effect as that of the piezoelectric thin film including the aluminum nitride thin film having a scandium content in the range of 10 to 35 atomic% is achieved.

In the method for manufacturing a piezoelectric thin film according to the present invention, it is further preferable that the power density in the sputtering step is in a range of 9.5 to 10 W / cm 2 .

  By sputtering scandium with a power density in the above range, the content of scandium in the aluminum nitride thin film can be in the range of 40 to 45 atomic%. Therefore, the same effect as that of the piezoelectric thin film including the aluminum nitride thin film having a scandium content in the range of 40 to 45 atomic% is achieved.

  In the method for manufacturing a piezoelectric thin film according to the present invention, it is further preferable that the temperature of the substrate in the sputtering step is in a range of 20 to 600 ° C.

  By setting the temperature of the substrate to which aluminum and scandium are attached within the above range, the piezoelectric response of the aluminum nitride thin film containing scandium can be further improved.

  Further, a piezoelectric thin film resonator including the piezoelectric thin film, a filter including the piezoelectric thin film resonator, an actuator element including the piezoelectric thin film, a gyro sensor, and a pressure sensor In addition, physical sensors such as acceleration sensors are also included in the scope of the present invention.

  As described above, the piezoelectric thin film according to the present invention can be realized as a conventional piezoelectric thin film including aluminum nitride by including the aluminum nitride thin film containing scandium in the range of 0.5 to 50 atomic%. There is no effect.

  Specifically, by providing the piezoelectric thin film according to the present invention in a device, for example, an RF-MEMS device, it is possible to achieve downsizing and power saving in the RF-MEMS device and to improve its performance. . In addition, when the piezoelectric thin film according to the present invention is applied to a physical sensor such as a gyro sensor, a pressure sensor, and an acceleration sensor, the detection sensitivity can be improved.

Embodiment 1
An embodiment of a piezoelectric thin film according to the present invention will be described below as Embodiment 1 with reference to FIGS.

  When the piezoelectric thin film according to the present invention is used for a piezoelectric element utilizing a piezoelectric phenomenon, its specific application is not particularly limited. For example, the piezoelectric thin film can be used for a SAW device or an RF-MEMS device. Here, the “piezoelectric body” in this specification and the like means a substance having a property of generating a potential difference when a mechanical force is applied, that is, piezoelectricity (hereinafter also referred to as piezoelectric response). The “piezoelectric thin film” means a thin film having the above properties.

  Further, “atomic%” in this specification and the like refers to atomic percentage, and specifically, the number of scandium atoms or aluminum when the total amount of scandium atoms and aluminum atoms is 100 atomic%. Represents the number of atoms. In other words, it can be paraphrased as the concentration of scandium atoms and aluminum atoms in aluminum nitride containing scandium. In the present embodiment, the atomic% of scandium will be described below as the scandium content with respect to aluminum nitride.

The scandium-containing aluminum nitride thin film (hereinafter also referred to as Sc-containing aluminum nitride thin film) according to the present embodiment uses a general formula, and Sc x Al 1-x N (where x is the scandium content ( Density), which is in the range of 0.005 to 0.5. For example, in the case of an aluminum nitride thin film having a scandium content of 10 atomic%, it is expressed as Sc 0.1 Al 0.9 N.

(Scandium content to improve piezoelectric response)
As shown in FIG. 1, the piezoelectric response (piezoelectricity) of the Sc-containing aluminum nitride thin film can be improved by changing the content of scandium contained in the Sc-containing aluminum nitride thin film. FIG. 1 is a graph showing the relationship between the scandium content and the piezoelectric response of an Sc-containing aluminum nitride thin film. As shown in FIG. 1, the piezoelectric response is improved when scandium is contained even in a small amount as compared with the case where the scandium content is 0%. Specifically, the piezoelectric response of the Sc-containing aluminum nitride thin film can be improved by setting the scandium content in the range of 0.5 to 35 atomic% or 40 to 50 atomic%. By setting the scandium content in the above range, the piezoelectric response of the Sc-containing aluminum nitride thin film is about 6 to 24.6 pC / N. Since the piezoelectric response of a general aluminum nitride thin film is about 5.1 to 6.7 pC / N, the piezoelectric response is about 1.4 to 4 times by setting the scandium content within the above range. Can be improved.

  Accordingly, when the piezoelectric thin film 1 including the Sc-containing aluminum nitride thin film having the scandium content in the above range is provided in the RF-MEMS device, an operation at a low voltage can be realized. Further, when the piezoelectric thin film 1 is provided in an RF-MEMS actuator, the movable region can be enlarged, and when it is provided in an FBAR filter, insertion loss can be reduced. In addition, when the piezoelectric thin film 1 is applied to a physical sensor such as a gyro sensor, a pressure sensor, and an acceleration sensor, the detection sensitivity can be improved.

  Therefore, when the content of scandium is within the above range, it is possible to achieve downsizing and power saving in a device having a piezoelectric thin film including an Sc-containing aluminum nitride thin film, and to improve its performance.

(Scandium content to further improve piezoelectric response)
From the viewpoint of further improving the piezoelectric response, the scandium content is preferably in the range of 40 to 50 atomic%. As shown in FIG. 1, the piezoelectric response of the Sc-containing aluminum nitride thin film shows a maximum value when the scandium content is 45 atomic% (Sc 0.45 Al 0.55 N) (about 24.6 pC). / N), about 4 times the piezoelectric response of aluminum nitride not containing scandium. The scandium content that maximizes the piezoelectric response exhibits an error of about ± 5 atomic% depending on the measurement conditions and the like.

  Therefore, when the scandium content is within the above range, the device having the piezoelectric thin film including the Sc-containing aluminum nitride thin film can be further reduced in size and power consumption, and the performance can be further improved. be able to.

  The effects described above are not limited to the piezoelectric thin film, and 0.5 to 35 atomic% or 40 to 50 atomic% when the total amount of scandium atoms and aluminum atoms is 100 atomic%. Even if the piezoelectric body is provided with aluminum nitride containing scandium within the range, the same effect as the piezoelectric thin film according to the present embodiment can be obtained.

(Configuration of piezoelectric thin film 1)
Here, an example of the piezoelectric thin film according to the present invention will be described more specifically with reference to FIG. As shown in FIG. 2, the piezoelectric thin film 1 includes an aluminum nitride thin film (hereinafter also referred to as Sc-containing aluminum nitride thin film) 3 containing scandium on a substrate 2. The Sc-containing aluminum nitride thin film 3 contains scandium within a range of 0.5 to 50 atomic% when the total amount of scandium atoms and aluminum atoms is 100 atomic%. FIG. 2 is a schematic sectional view of the piezoelectric thin film 1.

(Substrate 2)
The substrate 2 holds the Sc-containing aluminum nitride thin film 3 without deformation. The material of the substrate 2 is not particularly limited, and a silicon (Si) single crystal, or a material in which silicon, diamond and other polycrystalline films are formed on the surface of a base material such as a Si single crystal may be used. it can.

(Sc-containing aluminum nitride thin film 3)
The Sc-containing aluminum nitride thin film 3 is an aluminum nitride thin film containing scandium and has piezoelectric response.

[Embodiment 2]
Another embodiment of the piezoelectric thin film according to the present invention will be described below as a second embodiment with reference to FIGS. In the present embodiment, the same members as those in the first embodiment are given the same numbers. The same terms as those in the first embodiment are used in the present embodiment as the same meaning.

(Configuration of piezoelectric thin film 1b)
As shown in FIG. 3, in the piezoelectric thin film 1 b according to this embodiment, an intermediate layer 4 is formed between the substrate 2 and the Sc-containing aluminum nitride thin film 3. That is, in the piezoelectric thin film 1 b, the Sc-containing aluminum nitride thin film 3 is provided on the substrate 2 with the intermediate layer 4 interposed therebetween. Since the substrate 2 and the Sc-containing aluminum nitride thin film 3 have been described in the first embodiment, a detailed description thereof will be omitted here. Therefore, in the present embodiment, only the intermediate layer 4 will be described below. FIG. 3 is a schematic cross-sectional view of the piezoelectric thin film 1b.

(Intermediate layer 4)
The intermediate layer 4 is provided to cause interaction with the Sc-containing aluminum nitride thin film 3. The material of the intermediate layer 4 is preferably a material that easily causes interaction with both the Sc-containing aluminum nitride thin film 3 and the substrate 2. Examples of the material of the intermediate layer 4 include titanium nitride (TiN), scandium nitride (ScN), molybdenum (Mo), titanium (Ti), ruthenium (Ru), ruthenium oxide (RuO 2 ), chromium (Cr), and nitride. Use chromium, platinum (Pt), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tantalum (Ta), iridium (Ir), palladium (Pd), nickel (Ni), etc. Can do.

For example, when Sc 0.45 Al 0.55 N is used as the Sc-containing aluminum nitride thin film 3, by using scandium nitride (ScN) as the intermediate layer 4, compared to the case where no intermediate layer is provided, The piezoelectric response can be improved by about 4 pC / N.

(Scandium content to improve piezoelectric response)
A change in piezoelectric response of the piezoelectric thin film 1b when the intermediate layer 4 is provided will be described below with reference to FIG. FIG. 4 is a diagram showing the relationship between the scandium content and the piezoelectric response of the Sc-containing aluminum nitride thin film 3 when the intermediate layer 4 is provided.

  As shown in FIG. 4, the provision of the intermediate layer 4 improves the piezoelectric response of the piezoelectric thin film 1b even when the scandium content is larger than 35 atomic% and smaller than 40 atomic%. Can do. That is, it is possible to suppress a decrease in piezoelectric response that has been a problem in the piezoelectric thin film 1 of the first embodiment. This eliminates the need for strictly managing the composition of the Sc-containing aluminum nitride thin film 3 when the piezoelectric thin film is manufactured, thereby facilitating the manufacture of the piezoelectric thin film with improved piezoelectric response.

  Moreover, the piezoelectric response of an aluminum nitride thin film can be improved by making the scandium content within a range of 15 to 45 atomic%. By setting the scandium content in the above range, the piezoelectric response of the Sc-containing aluminum nitride thin film 3 is about 6 to 18 pC / N. Since the piezoelectric response of a general aluminum nitride thin film is about 5.1 to 6.7 pC / N, the piezoelectric response is about 1.1 to 3 times by setting the scandium content within the above range. Can be improved.

  Accordingly, when the piezoelectric thin film 1b including the Sc-containing aluminum nitride thin film 3 having the scandium content within the above range is provided in the RF-MEMS device, an operation at a low voltage can be realized. . In addition, when the piezoelectric thin film 1b is provided in the RF-MEMS actuator, the movable region can be enlarged, and when the piezoelectric thin film 1b is provided in the FBAR filter, the insertion loss can be reduced. Further, when the piezoelectric thin film 1b is applied to a physical sensor such as a gyro sensor, a pressure sensor, and an acceleration sensor, the detection sensitivity can be improved.

  Therefore, when the scandium content is within the above range, the device having the piezoelectric thin film 1b including the Sc-containing aluminum nitride thin film 3 can be reduced in size and power can be saved, and the performance can be improved. it can.

(Modification of intermediate layer 4)
As shown in FIGS. 5B to 5E, the intermediate layer 4 may be an Sc-containing aluminum nitride thin film having a composition different from that of the Sc-containing aluminum nitride thin film 3. By using Sc-containing aluminum nitride thin films having different compositions as the intermediate layer 4, the piezoelectric response of the piezoelectric thin film 1b can be improved.

For example, as shown in FIG. 5A, the piezoelectric thin film 1 using the Sc 0.47 Al 0.53 N layer as the Sc-containing aluminum nitride thin film 3 exhibits a piezoelectric response of about 7 pC / N. On the other hand, as shown in FIG. 5B, an Sc 0.40 Al 0.60 N layer is provided as the intermediate layer 4 between the Sc 0.47 Al 0.53 N layer and the substrate 2. As a result, the piezoelectric response of the piezoelectric thin film 1b is improved to about 10 pC / N. Further, as shown in FIG. 5C, by providing the Sc 0.42 Al 0.58 N layer as the intermediate layer 4, the piezoelectric response of the piezoelectric thin film 1b can be greatly improved to 25 pC / N. it can.

Moreover, the piezoelectric response of the piezoelectric thin film 1 in which the Sc 0.50 Al 0.50 N layer is provided as the Sc-containing aluminum nitride layer 3 on the substrate 2 is 0 pC / N. However, as shown in FIG. 5D, by providing a Sc 0.42 Al 0.58 N layer as the intermediate layer 4 between the substrate 2 and the Sc-containing aluminum nitride layer 3, the piezoelectric response is reduced to 0 pC / N can be improved to 14 pC / N.

  That is, by using Sc-containing aluminum nitride thin films having different compositions as the intermediate layer 4, the piezoelectric response of the piezoelectric thin film can be greatly improved.

  Further, the Sc-containing aluminum nitride thin film having a different composition used as the intermediate layer 4 is not limited to one layer, and a plurality of layers may be provided.

For example, as shown in FIG. 5E, Sc 0.47 Al 0.53 N is used as the Sc-containing piezoelectric thin film 3, and Sc 0.40 Al 0.60 N is sequentially formed from the substrate side as the intermediate layer 4. The piezoelectric thin film 1b using the three layers, the Sc 0.42 Al 0.58 N layer, and the Sc 0.45 Al 0.55 N layer, exhibits a piezoelectric response of about 19 pC / N. Thus, even when the intermediate layer 4 is composed of a plurality of layers, the piezoelectric response of the piezoelectric thin film 1b can be improved.

  Thus, by providing the Sc-containing aluminum nitride thin film 3 on the substrate 2 through the intermediate layer 4, not only the piezoelectric response of the piezoelectric thin film 1b is improved, but also the scandium content is slightly changed. It can suppress that the piezoelectric response of body thin film itself falls large. That is, by providing the intermediate layer 4, it is possible to facilitate the manufacture of a piezoelectric thin film having constant physical properties. In FIGS. 5A to 5E, a Si substrate is used as the substrate 2. However, the present invention is not limited to this.

[Embodiment 3]
An embodiment of a method for manufacturing the piezoelectric thin film 1 according to Embodiment 1 will be described below as Embodiment 3 with reference to FIG. In addition, the specific use of the Sc-containing aluminum nitride thin film is not particularly limited as long as it is used for a piezoelectric element utilizing a piezoelectric phenomenon. For example, a piezoelectric thin film including an Sc-containing aluminum nitride thin film can be used for a SAW device or an RF-MEMS device. Moreover, in this embodiment, the same term as Embodiment 1 is used as the same meaning.

The method of manufacturing the piezoelectric thin film 1 includes scandium and aluminum on a substrate 2 (for example, a silicon (Si) substrate) in a nitrogen gas (N 2 ) atmosphere or a mixed atmosphere of nitrogen gas (N 2 ) and argon gas (Ar). Including a sputtering step of simultaneously sputtering. As a result, the Sc-containing aluminum nitride thin film 3 having excellent adhesion and high purity can be formed. Further, by simultaneously sputtering scandium and aluminum, the Sc-containing aluminum nitride thin film 3 can be uniformly distributed without uneven distribution of scandium nitride and aluminum nitride.

(Power density range to improve piezoelectric response)
In the sputtering step, when the target power density of aluminum is fixed within the range of 7.9 W / cm 2 , the target power density of scandium is 0.05 to 6.5 W / cm 2 or 8.5 to 10 W / cm 2. Within the range.

  The “power density” in this specification and the like is a value obtained by dividing the sputtering power by the target area. Further, in the method for manufacturing a piezoelectric thin film according to the present invention, since scandium and aluminum are simultaneously sputtered, there are two types of target power densities: scandium target power density and aluminum target power density. In this specification and the like, when simply referred to as “target power density”, it refers to the target power density of scandium.

By setting the target power density within the range of 0.05 to 6.5 W / cm 2 or 8.5 to 10 W / cm 2 , the piezoelectric response in the Sc-containing aluminum nitride thin film can be improved.

That is, as shown in FIG. 6, when the target power density is in the range of 0.05 to 6.5 W / cm 2 , the scandium content is in the range of 0.5 to 35 atomic%. In the case of 8.5 to 10 W / cm 2 , the content is in the range of 40 to 50 atomic%. FIG. 6 is a diagram showing the relationship between the target power density, the scandium content, and the piezoelectric response of the Sc-containing aluminum nitride thin film.

As shown in FIG. 6, by a range of target power density of 0.05~6.5W / cm 2 or 8.5~10W / cm 2, the content of scandium, 0.5 to 35 atom % Or in the range of 40 to 50 atomic%, and a piezoelectric response of about 6 to 24.6 pC / N can be obtained. Therefore, by the range of target power density of 0.05~6.5W / cm 2 or 9.5~10W / cm 2, in the range of from 0.5 to 35 atomic% or 40-50 atomic% An effect similar to that of the piezoelectric thin film 1 including the Sc-containing aluminum nitride thin film 3 can be obtained.

  In the sputtering step, the other conditions are not particularly limited as long as the target power density is within the above range. For example, the sputtering pressure and the sputtering time can be set as appropriate.

(Substrate temperature range to improve piezoelectric response)
In the sputtering process, when the target power density is in the range of 0.05 to 6.5 W / cm 2 or 8.5 to 10 W / cm 2 , the piezoelectricity of the Sc-containing aluminum nitride thin film 3 is changed by changing the substrate temperature. Responsiveness can be further improved. FIG. 7 shows the relationship between the substrate temperature and the piezoelectric response of the Sc-containing aluminum nitride thin film 3.

  As shown in FIG. 7, in the sputtering step, the substrate temperature is set within the range of 20 to 600 ° C., more preferably within the range of 200 to 450 ° C., and still more preferably within the range of 400 to 450 ° C. The piezoelectric response of the aluminum nitride thin film 3 can be improved. Specifically, by setting the temperature of the substrate within the range of 20 to 600 ° C., the piezoelectric response can be set to about 15 to 28 pC / N, and by setting the temperature within the range of 200 to 450 ° C. The responsiveness can be set to about 26 to 28 pC / N. When the substrate temperature is in the range of 400 to 450 ° C., the piezoelectric response of the Sc-containing aluminum nitride thin film 3 can be maximized (about 28 pC / N).

  Therefore, by setting the substrate temperature in the sputtering step within the above range, the device having the piezoelectric thin film 1 provided with the produced Sc-containing aluminum nitride thin film 3 can be further reduced in size and power consumption, and The performance can be further improved.

(Range of power density that further improves piezoelectric response)
According to an aspect of the piezoelectric response of the further improvement, the target power density is preferably in the range also show 9.5~10W / cm 2 within the above range, more preferably 10 W / cm 2. As shown in FIG. 6, the piezoelectric response is further improved by setting the target power density in the range of 5 to 10 W / cm 2 . In particular, when the target power density is 10 W / cm 2 , the scandium content in the Sc-containing aluminum nitride thin film 3 is 45 atomic%, and the piezoelectric response is the maximum (24.6 pC / N). That is, when the target power density is 10 W / cm 2 , the same effect as when the scandium content is 45 atomic% can be obtained.

  The scandium content that maximizes the piezoelectric response shows an error of about ± 5 atomic% depending on the measurement conditions and the like.

(Manufacturing method of the piezoelectric thin film 1b provided with the intermediate layer 4)
In the above, the manufacturing method of the piezoelectric thin film 1 according to the first embodiment has been described, but even the piezoelectric thin film 1b according to the second embodiment can be manufactured by the same manufacturing method.

  The piezoelectric thin film 1b is different only in that it further includes an intermediate layer forming step of forming the intermediate layer 4 on the substrate 2. The method for forming the intermediate layer 4 can be appropriately set according to the material used for the intermediate layer 4. For example, sputtering, vacuum deposition, ion plating, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), laser ablation, plating, and the like can be given.

  FIG. 8 shows the relationship between the scandium target power density, the scandium content, and the piezoelectric response of the Sc-containing aluminum nitride thin film in the piezoelectric thin film 1 b provided with the intermediate layer 4. FIG. 8 is a view when titanium nitride (TiN) is used as the intermediate layer 4.

As shown in FIG. 8, by providing the intermediate layer 4, the piezoelectric response was lowered when the intermediate layer 4 was not provided, and the scandium content was larger than 35 atomic% and smaller than 40 atomic%. If, namely, larger target power density than 6.5 W / cm 2, it is possible to suppress the reduction of the piezoelectric response when less than 8.0 W / cm 2.

  When the intermediate layer 4 is Sc-containing aluminum nitride having a composition different from that of the Sc-containing aluminum nitride thin film 3, a method similar to the method for forming the Sc-containing aluminum nitride thin film 3 may be used.

[Embodiment 4]
An embodiment of a piezoelectric thin film resonator including the piezoelectric thin film according to the present invention will be described below as a fourth embodiment. The specific application of the piezoelectric thin film resonator including the piezoelectric thin film according to the present invention is not particularly limited. In the present embodiment, a case where the piezoelectric thin film 1 including the Sc-containing aluminum nitride thin film 3 is used for an FBAR filter which is one of RF-MEMS devices will be described as an example. In the present embodiment, the FBAR filter using the piezoelectric thin film 1 has been described. Of course, the piezoelectric thin film 1b can also be used. Moreover, in this embodiment, the same term as Embodiments 1-3 is used as the same meaning.

  The FBAR filter 10 (piezoelectric thin film resonator) according to the present embodiment will be described below with reference to FIG.

(Configuration of FBAR filter 10)
As shown in FIG. 9, the FBAR filter 10 includes a substrate 11 and a piezoelectric laminated structure 12 formed on the substrate 11. FIG. 9 is a schematic cross-sectional view of the FBAR filter 10.

(Substrate 11)
The substrate 11 is a substrate for holding the piezoelectric multilayer structure 12, and in order to freely vibrate the piezoelectric multilayer structure 12, a cavity portion 16 is provided in a lower part where the piezoelectric multilayer structure 12 is formed. Yes.

  The material of the substrate 11 is not particularly limited as long as the material can hold the piezoelectric multilayer structure 12 without deformation. For example, a silicon (Si) single crystal, or a silicon single crystal or the like formed on the surface of a base material such as silicon, diamond and other polycrystalline films can be used.

  Moreover, as a formation method of the cavity part 16, an anisotropic etching method or a deep reactive anisotropic etching method can be used.

(Configuration of piezoelectric laminated structure 12)
The piezoelectric laminated structure 12 includes a lower electrode 13 and an upper electrode 15, and a piezoelectric thin film 14 sandwiched between the lower electrode 13 and the upper electrode 15. Each member will be described below.

(Lower electrode 13 and upper electrode 15)
The lower electrode 13 and the upper electrode 15 are electrodes for applying an alternating electric field to the piezoelectric thin film 14. The materials of the lower electrode 13 and the upper electrode 15 are molybdenum (Mo), tungsten (W), aluminum (Al), a laminated film of platinum and titanium (Pt / Ti), and a laminated film of gold and chromium (Au / Cr) can be used. Among these, it is preferable to use molybdenum with a low elastic loss.

  Moreover, it is preferable that the thickness of the lower electrode 13 and the upper electrode 15 exists in the range of 50-200 nm. By making the thicknesses of the lower electrode 13 and the upper electrode 15 within the above range, the loss can be reduced. As a method of forming the lower electrode 13 and the upper electrode 15, a conventionally known method can be used. For example, a sputtering method or a vapor deposition method can be used.

(Piezoelectric thin film 1)
Since the piezoelectric thin film 1 has been described in detail in the first and third embodiments, the description thereof is omitted in this embodiment. The thickness of the piezoelectric thin film 1 is preferably in the range of 0.1 to 30 μm. By setting the thickness of the piezoelectric thin film 1 within the above range, a thin film having excellent adhesion can be obtained.

(Additional notes)
Note that the FBAR filter 10 may include a base film between the substrate 11 and the lower electrode 13. The base film is an insulating film, and for example, silicon oxide (SiO 2 ), silicon nitride, and a dielectric film mainly composed of a stacked film of silicon oxide and silicon nitride can be used. Here, “main component” in this specification and the like means a component exceeding 50 mass% of all components contained in the dielectric film.

  The dielectric film may be composed of a single layer, or may be composed of multiple layers to which a layer for improving adhesion is added. The thickness of the base film is preferably 0.05 to 2.0 μm.

  The base film can be formed by a conventionally known method. For example, it can be formed by a thermal oxidation method and a chemical vapor deposition method (CVD) on the surface of the substrate 11 made of silicon.

[Embodiment 5]
An embodiment of an actuator element including the piezoelectric thin film according to the present invention will be described below as a fifth embodiment. The specific application of the actuator element provided with the piezoelectric thin film according to the present invention is not particularly limited. In the present embodiment, a case where the piezoelectric thin film 1 including the Sc-containing aluminum nitride thin film 3 is used as a switch which is one of RF-MEMS devices will be described as an example. In the present embodiment, the RF-MEMS device using the piezoelectric thin film 1 has been described. Of course, the piezoelectric thin film 1b can also be used. Moreover, in this embodiment, the same term as Embodiments 1-4 is used as the same meaning.

(Switch 20)
The switch 20 (actuator element) according to this embodiment will be described below with reference to FIGS. 10 (a) and 10 (b). 10A and 10B are diagrams showing schematic cross-sectional views of the switch 20, FIG. 10A is a diagram showing a state where no voltage is applied, and FIG. 10B is a state where a voltage is applied. FIG.

  As shown in FIGS. 10A and 10B, the switch 20 mainly includes a substrate 21, a lower electrode 22, and a movable portion 23.

(Substrate 21)
The substrate 21 is a substrate for holding the fixed electrode 22 and the movable portion 24. The lower electrode 22 is provided at one end, and the side facing the end on the side where the lower electrode 22 is provided. The movable portion 24 is held at the end of the.

  The material of the substrate 21 is not particularly limited as long as the lower electrode 22, the dielectric film 23, and the movable portion 24 can be held without being deformed. For example, a silicon (Si) single crystal, or a silicon single crystal or the like formed on the surface of a base material such as silicon, diamond and other polycrystalline films can be used.

(Lower electrode 22)
The lower electrode 22 is an electrode that contacts the upper electrode 28 described below when the switch 20 is energized, that is, in the “ON” state.

  The material of the lower electrode 22 is molybdenum (Mo), tungsten (W), aluminum (Al), copper (Cu), nickel (Ni), a laminated film of platinum and titanium (Pt / Ti), and gold and chromium. And a laminated film (Au / Cr) can be used.

  As a method of forming the lower electrode 22, a conventionally known method can be used. For example, a sputtering method or a vapor deposition method can be used.

(Configuration of movable part 23)
As shown in FIGS. 10A and 10B, the movable portion 23 includes the piezoelectric thin film 1, the first movable electrode 25, the second movable electrode 26, the third movable electrode 27, and the upper electrode 28. ing. Each member will be described below. Since the piezoelectric thin film 1 is described in detail in the first and second embodiments, the description thereof is omitted in this embodiment.

(First movable electrode 25, second movable electrode 26, and third movable electrode 27)
The first movable electrode 25, the second movable electrode 26, and the third movable electrode 27 are electrodes that are used when a voltage for driving the piezoelectric thin film 1 is applied. The piezoelectric thin film 1 is provided between the first electrode 26 and the second movable electrode 26 and the third movable electrode 27.

  As materials of the first movable electrode 25, the second movable electrode 26, and the third movable electrode 27, molybdenum (Mo), tungsten (W), aluminum (Al), copper (Cu), nickel (Ni), A laminated film of platinum and titanium (Pt / Ti), a laminated film of gold and chromium (Au / Cr), or the like can be used.

  As a method of forming the first movable electrode 25, the second movable electrode 26, and the third movable electrode 27, a conventionally known method can be used. For example, a sputtering method or a vapor deposition method can be used.

(Upper electrode 28)
The upper electrode 28 is provided at the end of the movable portion 23 that faces the end of the movable portion 23 that is held by the substrate 21, and is an electrode that contacts the lower electrode 22 when the movable portion 23 moves.

  The material of the upper electrode 28 is molybdenum (Mo), tungsten (W), aluminum (Al), copper (Cu), nickel (Ni), a laminated film of platinum and titanium (Pt / Ti), and gold and chromium. And a laminated film (Au / Cr) can be used.

  As a method of forming the upper electrode 28, a conventionally known method can be used. For example, a sputtering method or a vapor deposition method can be used.

(Operation of switch 20)
As shown in FIG. 10B, the switch 20 is in a state where the switch 20 is not energized by applying a voltage to the first movable electrode 25, the second movable electrode 26, and the third movable electrode 27. It changes from the current state to the energized state. That is, the state of the switch 20 changes from “OFF” to “ON”.

  More specifically, by applying a voltage to the first movable electrode 25, the second movable electrode 26, and the third movable electrode 27, the piezoelectric thin film 1 becomes, for example, as shown in FIG. The movable portion 23 is driven to the substrate 21 side. Thereby, the lower electrode 22 and the upper electrode 28 come into contact with each other. As a result, the switch 20 changes from “OFF” to “ON”.

[Embodiment 6]
An embodiment of a physical sensor including the piezoelectric thin film according to the present invention will be described below as an embodiment 6. The specific use of the physical sensor provided with the piezoelectric thin film according to the present invention is not particularly limited. In the present embodiment, a case where the piezoelectric thin film 1 including the Sc-containing aluminum nitride thin film 3 is used as a pressure sensor will be described as an example. In the present embodiment, the RF-MEMS device using the piezoelectric thin film 1 has been described. Of course, the piezoelectric thin film 1b can also be used. Moreover, in this embodiment, the same term as Embodiments 1-5 is used as the same meaning.

(Pressure sensor 30)
The pressure sensor 30 (physical sensor) according to this embodiment will be described below with reference to FIGS. 11 (a) and 11 (b). 11 (a) and 11 (b) are diagrams showing a schematic diagram of the pressure sensor 30, and FIG. 11 (a) is a diagram showing a case where a piezoelectric thin film is provided between the electrode and the lower electrode. (B) is a figure which shows the case where the support part is provided between the piezoelectric material thin film and the lower electrode.

  As shown in FIG. 11A, the pressure sensor 30 according to the present embodiment mainly includes an upper electrode 31, the piezoelectric thin film 1, and a lower electrode 33. Each member will be described below. Since the piezoelectric thin film 1 has been described in the first and third embodiments, the description thereof is omitted in the present embodiment.

(Upper electrode 31 and lower electrode 33)
The upper electrode 31 and the lower electrode 33 function as electrodes in the pressure sensor 30. As shown in FIG. 11A, the upper electrode 31 and the lower electrode 33 are formed so as to sandwich the piezoelectric thin film 1 therebetween.

  Note that which of the upper electrode 31 and the lower electrode 33 is used as a cathode or an anode is not particularly limited, and can be set as appropriate.

  The material of the upper electrode 31 and the lower electrode 33 is not particularly limited as long as the charge generated in the piezoelectric thin film 1 can be taken out without loss. For example, molybdenum (Mo), tungsten (W), aluminum (Al), copper (Cu), nickel (Ni), a laminated film of platinum and titanium (Pt / Ti), and a laminated film of gold and chromium (Au / Cr) can be used.

  Moreover, as a method for forming the upper electrode 31 and the lower electrode 33, a conventionally known method can be used. For example, a sputtering method or a vapor deposition method can be used.

(Operation of pressure sensor 30)
As shown in FIG. 11A, when a force F is applied to the pressure sensor 30, the piezoelectric thin film 1 generates an electric charge according to the applied pressure. The generated charges are taken out by the upper electrode 31 and the lower electrode 33 and sent to a capacitor (capacitor). That is, since the pressure sensor 30 can measure the potential of the charge taken out by the capacitor, the magnitude of the pressure F applied from the measured potential can be measured.

(Modification of pressure sensor 30)
As shown in FIG. 11B, the pressure sensor 30 may include a support portion 34 between the piezoelectric thin film 1 and the lower electrode 33.

  The support portion 34 is used as a monomorph, and the material thereof is metal, polymer, ceramics, or the like. By providing the support portion 34, the piezoelectric sensor 30 can exhibit a sensitizing effect.

  In the present embodiment, a pressure sensor has been described as an example of a physical sensor. However, the present invention is not limited to this, and for example, a gyro sensor and an acceleration sensor may be used.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  Hereinafter, an Example is shown and it demonstrates in more detail about the form of this invention. Of course, the present invention is not limited to the following examples, and various modes are possible for details.

[Example 1]
(Method for producing scandium-added aluminum nitride thin film)
Aluminum and scandium were sputtered onto the silicon substrate in a nitrogen atmosphere to prepare a Sc-containing aluminum nitride thin film on the silicon substrate. The sputtering conditions are an aluminum target power density of 7.9 W / cm 2 , a scandium target power density of 0 to 10 W / cm 2 , a substrate temperature of 580 ° C., a nitrogen gas concentration of 40%, and a sputtering time of 4 hours. The target power density of 0 W indicates that scandium is not added to the aluminum nitride thin film.

(Piezoelectric response measurement method)
The piezoelectric response of the Sc-containing aluminum nitride thin film was measured using a piezometer with a weight of 0.25 N and a frequency of 110 Hz.

[Comparative Example 1]
An aluminum nitride thin film was prepared using the same method as in Example 1 except that magnesium (Mg) was used instead of scandium and the target power density was 0 to 2 W / cm 2, and the piezoelectric response was measured. .

[Comparative Example 2]
An aluminum nitride thin film was prepared using the same method as in Example 1 except that boron (B) was used instead of scandium and the target power density was set to 0 to 7.6 W / cm 2. It was measured.

[Comparative Example 3]
An aluminum nitride thin film was prepared using the same method as in Example 1 except that silicon (Si) was used instead of scandium and the target power density was set to 0 to 1.5 W / cm 2. It was measured.

[Comparative Example 4]
An aluminum nitride thin film was prepared using the same method as in Example 1 except that titanium (Ti) was used instead of scandium and the target power density was set to 0 to 1.8 W, and the piezoelectric response was measured.

[Comparative Example 5]
An aluminum nitride thin film was prepared using the same method as in Example 1 except that chromium (Cr) was used instead of scandium and the target power density was set to 0 to 0.8 W / cm 2. It was measured.

[Measurement results of Example 1 and Comparative Examples 1 to 5]
Since the measurement result in Example 1 was demonstrated above, the description is abbreviate | omitted here. The measurement results in Comparative Examples 1 to 5 are shown in FIGS. FIGS. 12A to 12E are diagrams showing the relationship between the target power density and the piezoelectric response, wherein FIG. 12A shows a case where magnesium is added, and FIG. 12B shows a case where boron is added. Yes, (c) is when silicon is added, (d) is when titanium is added, and (e) is when chromium is added.

As shown in FIGS. 12A to 12E, it was shown that even when elements other than scandium were added, the piezoelectric response of the aluminum nitride thin film only decreased and did not improve. In addition, as shown in FIG. 6, when the power density is in the range of 6.5 to 8.5 W / cm 2 , that is, the scandium content is in the range of 35 to 40 atomic%, scandium is contained. It was shown that the piezoelectric response was lower than the piezoelectric response of the aluminum nitride thin film.

[Example 2]
The surface roughness of the Sc-containing aluminum nitride thin film in which the scandium content (hereinafter also referred to as Sc content) was 25 atomic% was measured.

  The surface roughness was measured using an atomic force microscope (AFM). In addition, “surface roughness” in this specification and the like means arithmetic average roughness (Ra).

[Comparative Example 6]
Surface roughness was measured by the same method as in Example 2 except that an aluminum nitride thin film containing no Sc (aluminum nitride thin film having an Sc content of 0 atomic%) was used.

[Comparative Example 7]
The surface roughness was measured by the same method as in Example 2 except that the Sc content was 38 atomic%.

[Comparative Example 8]
The surface roughness was measured by the same method as in Example 2 except that the Sc content was 42 atomic%.

[Measurement results of surface roughness]
The results of surface roughness in Example 2 and Comparative Examples 6 to 8 are shown in FIGS. FIGS. 13A to 13D are diagrams in which the surface roughness in Example 2 and Comparative Examples 6 to 8 are observed using an atomic force microscope, and FIG. 13A shows that the Sc content is 25 atomic%. (B) is the case where the Sc content is 0 atomic%, (c) is the case where the Sc content is 38 atomic%, and (d) the Sc content is 42 atomic%. This is the case.

  When the Sc content was 25 atomic%, that is, in FIG. 13A, the surface roughness Ra was 0.6 nm. On the other hand, when the Sc content is 0 atomic%, that is, in FIG. 13B, the surface roughness Ra is about 0.9 nm. Thus, it was shown that the surface roughness can be reduced by setting the amount of Sc to be 0.5 atomic% to 35 atomic%.

  When the Sc content is 38 atomic% and 42 atomic%, that is, when the surface roughness Ra shown in FIGS. 13 (c) and (d) is 3.5 nm and 3.0 nm, the surface roughness It was shown that the increase was about 5 times or more compared with the case where the Sc content was 25 atomic%.

  The piezoelectric thin film according to the present invention can be suitably used in a device using a piezoelectric phenomenon such as an RF-MEMS device. In addition, the RF-MEMS device including the piezoelectric thin film according to the present invention can be suitably used for a small-sized and high-performance electronic device such as a mobile phone.

It is a figure which shows the relationship between the content rate of a scandium, and the piezoelectric response of a Sc containing aluminum nitride thin film. 1 is a schematic cross-sectional view showing a piezoelectric thin film according to Embodiment 1. FIG. 6 is a schematic cross-sectional view showing a piezoelectric thin film according to Embodiment 2. FIG. It is a figure which shows the relationship between the scandium content rate and the piezoelectric response of a Sc containing aluminum nitride thin film in the case of providing an intermediate | middle layer. Is a diagram showing a specific example of the piezoelectric thin film according to the present invention, (a) is a case without the intermediate layer, the Sc 0.40 Al 0.60 N layer as (b) an intermediate layer provided (C) is a case where a Sc 0.42 Al 0.58 N layer is provided as an intermediate layer, and (d) is a case where Sc 0.50 Al 0.50 N is used as a Sc-containing aluminum nitride thin film. In this case, an Sc 0.42 Al 0.58 N layer is provided as an intermediate layer, and (e) is a case where the intermediate layer is composed of a plurality of layers. It is a figure which shows the relationship between the target power density of a scandium, the content rate of a scandium, and the piezoelectric response of a Sc containing aluminum nitride thin film. It is a figure which shows the relationship between a substrate temperature and the piezoelectric response of a Sc containing aluminum nitride thin film. It is a figure which shows the relationship between the target electric power density of scandium in the piezoelectric material thin film provided with the intermediate | middle layer, the content rate of scandium, and the piezoelectric response of a Sc containing aluminum nitride thin film. It is a figure which shows schematic sectional drawing of the FBAR filter which concerns on Embodiment 4. FIG. It is a figure which shows the schematic sectional drawing of the switch which concerns on Embodiment 5, (a) is the state which has not applied the voltage, (b) is the state which applied the voltage. It is a figure which shows the schematic sectional drawing of the pressure sensor which concerns on Embodiment 6, (a) is a case where the piezoelectric material thin film is provided between the said electrode and the lower electrode, (b) is a piezoelectric material thin film, This is a case where a support portion is further provided between the lower electrode. It is a figure which shows the relationship between a target power density and piezoelectric response, (a) is a case where magnesium is added to the aluminum nitride thin film, (b) is a case where boron is added, (c) is silicon (D) is the case where titanium is added, and (e) is the case where chromium is added. It is the figure which observed the surface shape of the Sc containing aluminum nitride thin film or the aluminum nitride thin film using an atomic force microscope (AFM), (a) is a case where Sc content is 25 atomic%, (b) This is a case where the Sc content is 0 atomic%, (c) is a case where the Sc content is 38 atomic%, and (d) a case where the Sc content is 42 atomic%.

Explanation of symbols

1, 1b Piezoelectric thin film 2 Substrate 3 Sc-containing aluminum nitride thin film 4 Intermediate layer 10 FBAR filter (piezoelectric thin film resonator)
DESCRIPTION OF SYMBOLS 11 Board | substrate 12 Piezoelectric laminated structure 13 Lower electrode 15 Upper electrode 16 Cavity part 20 Switch (actuator element)
21 Substrate 22 Lower electrode 23 Movable portion 25 First movable electrode 26 Second movable electrode 27 Third movable electrode 28 Upper electrode 30 Pressure sensor (physical sensor)
31 Upper electrode 33 Lower electrode 34 Support part

Claims (19)

  1. A piezoelectric thin film comprising an aluminum nitride thin film containing a rare earth element, wherein the rare earth element is scandium, and the total number of scandium atoms and aluminum atoms in the aluminum nitride thin film is 100 atoms. % and the time, content of the scandium state, and are within the scope of 0.5 to 50 atomic%, the aluminum nitride thin film is provided on the substrate, between the aluminum nitride thin film and the substrate Is a piezoelectric thin film provided with at least one intermediate layer .
  2. A piezoelectric thin film comprising an aluminum nitride thin film containing a rare earth element, wherein the rare earth element is scandium, and the total amount of the scandium atoms and the aluminum atoms in the aluminum nitride thin film is 100 atomic%. The piezoelectric thin film is characterized in that the scandium content is in the range of 0.5 to 35 atomic% .
  3. A piezoelectric thin film comprising an aluminum nitride thin film containing a rare earth element, wherein the rare earth element is scandium, and the total amount of the scandium atoms and the aluminum atoms in the aluminum nitride thin film is 100 atomic%. A piezoelectric thin film characterized in that the scandium content is in the range of 40 to 50 atomic%.
  4. The content of the scandium is in the range of 15 to 45 atomic% when the total amount of the scandium atoms and the aluminum atoms in the aluminum nitride thin film is 100 atomic%. piezoelectric thin film according to 1.
  5.   The content of the scandium is in the range of 10 to 35 atomic%, where the total amount of the scandium atoms and the aluminum atoms is 100 atomic%. Piezoelectric thin film.
  6. 2. The piezoelectric thin film according to claim 1, wherein the intermediate layer is an aluminum nitride thin film having a different content of titanium nitride or scandium.
  7. A piezoelectric body comprising an aluminum nitride thin film containing a rare earth element, wherein the rare earth element is scandium, and the total amount of scandium atoms and aluminum atoms in the aluminum nitride is 100 atomic%. When the scandium content is in the range of 0.5 to 50 atomic%, the aluminum nitride thin film is provided on the substrate, and at least between the aluminum nitride thin film and the substrate. A piezoelectric body characterized in that one intermediate layer is provided.
  8. A piezoelectric body made of aluminum nitride containing a rare earth element, wherein the rare earth element is scandium, and when the total number of scandium atoms and aluminum atoms in the aluminum nitride is 100 atomic%, A piezoelectric body, wherein the scandium content is in the range of 0.5 to 35 atomic% .
  9. A piezoelectric body made of aluminum nitride containing a rare earth element, wherein the rare earth element is scandium, and when the total number of scandium atoms and aluminum atoms in the aluminum nitride is 100 atomic%, content of the scandium, pressure collector you being in the range of 4 0 to 50 atomic%.
  10. A method of manufacturing a piezoelectric thin film comprising an aluminum nitride thin film containing a rare earth element on a substrate, comprising a sputtering step of simultaneously sputtering aluminum and scandium in an atmosphere containing at least nitrogen gas, and The method for producing a piezoelectric thin film, wherein the scandium power density in the sputtering step is in a range of 0.05 to 10 W / cm 2 .
  11. The piezoelectric thin film is made of the aluminum nitride thin film, and includes a sputtering step of simultaneously sputtering aluminum and scandium on the substrate, and the power density of the scandium in the sputtering step is 0.05. The method for producing a piezoelectric thin film according to claim 10, which is in a range of ˜6.5 W / cm 2 or 8.5 to 10 W / cm 2 .
  12. Before the said sputtering process, it further includes the intermediate | middle layer formation process which forms an intermediate | middle layer on the said board | substrate, and the power density of the said scandium in the said sputtering process exists in the range of 0.05-10 W / cm < 2 >. The method for producing a piezoelectric thin film according to claim 10, wherein
  13. The method for manufacturing a piezoelectric thin film according to claim 11, wherein the power density in the sputtering step is in a range of 2 to 6.5 W / cm2.
  14. The above power density in the sputtering process, a manufacturing method of the piezoelectric thin film according to claim 11, characterized in that it is in the range of 9.5~10W / cm 2.
  15.   The method for producing a piezoelectric thin film according to any one of claims 10 to 14, wherein the temperature of the substrate in the sputtering step is in a range of 20 to 600 ° C.
  16. Piezoelectric thin film resonator, characterized in that it comprises a piezoelectric thin film according to any one of claims 1 to 6.
  17.   A filter comprising the piezoelectric thin film resonator according to claim 16.
  18. An actuator element comprising the piezoelectric thin film according to any one of claims 1 to 6 .
  19. Physical sensor, characterized in that it comprises a piezoelectric thin film according to any one of claims 1 to 6.
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