TWI810698B - Electrode-defined unsuspended acoustic resonator - Google Patents

Abstract

The present invention provides a BAW resonator operable in BAW mode comprising a resonator body mounted on a separate carrier which is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer and an upper conductive layer. The upper conductive layer is located above the piezoelectric layer and the other side of the piezoelectric layer is the device layer. The aforementioned piezoelectric layer is LiNbO ₃ single crystal cut at an angle of 130°±30°. The surface of the aforementioned device layer opposite to the aforementioned piezoelectric layer is used for mounting the aforementioned resonator body on a carrier.

Description

Electrodes define the unsuspended acoustic resonator

The present invention relates to a bulk acoustic wave resonator, in particular to a bulk acoustic wave resonator, which has a resonator body, and optionally has one or a plurality of connecting structures, the aforementioned connecting structures can be used to supply electrical signals to one or Conductive layer for multiple resonators.

Wireless communication has progressed from the "1G" system in the 1980s to the "2G" system in the 1990s, to the "3G" system in the 2000s, and to the "4G" system that has been standardized in 2012. In existing wireless communications, surface-acoustic-wave (SAW) filters or bulk-acoustic-wave (BAW) filters are used to filter RF signals.

Film bulk acoustic resonators (film-bulk-acoustic-resonators; FBAR) and solid-state micro-resonators (solid-mounted-resonators; SMR) are two types of BAW filters, which are piezoelectrically driven micro-electromechanical systems (micro-electro -mechanical-system (MEMS) devices, compared with SAW filter devices, can make today's 4G wireless communications resonate at relatively high frequency and relatively low insertion loss. These BAW acoustic resonators comprise a piezoelectric stack having, for example, a thin film of piezoelectric material sandwiched between a top and a bottom electrode film. Such piezoelectric The resonant frequency of the stack is thickness-based or dependent on the thickness of the piezoelectric stack's thin films. The resonance frequency increases as the thickness of the films of the piezoelectric stack decreases. The film thickness of the resonator is critical and must be precisely controlled to obtain the desired resonant frequency. Correcting different regions of the piezo stack to achieve a consistent high degree of thickness in order to achieve a target or specific RF frequency within a reasonable yield of the FBAR and SMR production process is difficult and time consuming.

The 5G wireless communication system under development will eventually replace the aforementioned early communication system with lower performance. The RF frequency of the aforementioned early communication system is between several hundred MHz and 1.8 GHz. 5G systems will operate at higher RF frequencies, such as: 3-6GHz (below 6GHz) or higher up to 100GHz.

Due to the increase in frequency, the resonant frequency must be increased by reducing the film thickness of FBAR and SMR-related RF filters used in 5G applications, which is one of the challenges faced by BAW acoustic resonators in the current state of the art. A decrease in piezoelectric film thickness means a decrease in the distance between the top and bottom electrodes of the piezoelectric stack, resulting in an increase in capacitance. The rise in capacitance results in higher feedthrough of the RF signal and degrades the signal to noise ratio, which is undesirable. The ideal piezoelectric coupling efficiency of the piezoelectric stack (upper electrode, lower electrode, and piezoelectric layer between the upper and lower electrodes) can come from an ideal combination, which is the thickness of the piezoelectric layer, the thickness of the upper electrode, the thickness of the lower electrode And the alignment and direction of the piezoelectric crystal. To achieve the high RF frequency operation required for 5G communications, reducing the piezoelectric film thickness may not achieve optimal piezoelectric coupling efficiency, which results in higher insertion loss and higher motional impedance. The thickness of the electrodes, whether upper electrodes, lower electrodes or both, must be reduced. A decrease in electrode thickness leads to an increase in resistivity, which would lead to another undesired limitation, higher insertion loss.

Also, the product of frequency and the quality factor (or Q value) is generally unchanged, which means that the increase of the resonance frequency will lower the Q value. The reduction of Q value is not expected, especially the current technical level of FBAR and the Q of SMR will approach the theoretical limit frequency of 2.45GHz or lower. Therefore, doubling the frequency will result in a lower Q value, making it difficult to fabricate RF devices such as RF filters, RF resonators, RF switches, and RF oscillators.

In view of this, the present invention provides a resonator body operable using a bulk acoustic wave mode, ideally a lateral resonant mode. The bottom of the resonator body can be installed or coupled on the mounting substrate or carrier, and the resonator body can be used as RF filter, RF resonator, RF switch and RF oscillator etc.

The present invention also provides a bulk acoustic wave resonator, which includes a resonator body and one or a plurality of connection structures, which can transmit electrical information to one or a plurality of conductive layers of the resonator body. In an ideal and non-limiting implementation or example, the aforementioned one or more connecting structures can be integrally formed and/or formed from the same layer of material as the aforementioned resonator body, so the bulk acoustic wave resonator can be a single object. The bottom of a single-object bulk acoustic resonator can be installed or coupled to a mounting substrate or carrier, and the resonator body can be used as an RF filter, RF resonator, RF switch, and RF oscillator, etc.

The bulk acoustic wave resonator of the present invention is characterized in that it includes: a resonator body, which includes: a piezoelectric layer; a device layer; and an upper conductive layer, which is located above the piezoelectric layer and on top of the piezoelectric layer The other side is the aforementioned device layer; wherein the entire surface of the aforementioned device layer opposite to the aforementioned piezoelectric layer is substantially used for mounting the aforementioned resonator body on a carrier and separating the aforementioned resonator body.

2: Bulk Acoustic Resonator (UBAR)

4: Resonator body

6: Upper conductive layer

8: Piezoelectric layer

10: Optional lower conductive layer

12: Device layer

14: carrier

16: Substrate

18: Interdigitated electrodes

20, 24, 28: Shrapnel

22, 26: back

27: Comb electrode

30: First back

32: Second back

33: Sheet electrode

34, 36: Connection structure

38: finger spacing

40, 44: bottom metal layer

42, 46: metal layer

48, 58: contact pad

50: Conductive vias

52, 60: Conductor

54: Transverse conductor

56, 62: Tether conductor

64, 66, 68, 70: Bottom

76: Tether structure

82, 84, 88: resonance frequency

90, 92, 94: temperature compensation layer

96: aluminum nitride

100: the first low-acoustic impedance layer

102: The first high-acoustic impedance layer

104: The second low-acoustic impedance layer

106: The second highest acoustic impedance layer

108: The third low-acoustic impedance layer

110: The third high-acoustic impedance layer

112: The fourth low-acoustic impedance layer

114: The fourth high-acoustic impedance layer

116: The fifth low-acoustic impedance layer

118: The fifth highest acoustic impedance layer

120: The sixth low-acoustic impedance layer

122: The sixth highest acoustic impedance layer

124: The seventh low-acoustic impedance layer

126: The seventh high-acoustic impedance layer

128: The eighth low-acoustic impedance layer

130: The eighth high-acoustic impedance layer

132: The ninth low-acoustic impedance layer

The present invention will be illustrated by the following description in conjunction with the drawings, so that the above and other objects and technical features of the invention will be more apparent.

[FIG. 1] is a side view of an ideal and non-limiting embodiment or example of an unsuspended BAW resonator according to the principles of the present invention (e.g., used herein to illustrate the first unsuspended BAW resonator. and the second example).

[FIG. 2] is a side view of an ideal and non-limiting implementation or example of an unsuspended BAW resonator according to the principles of the present invention.

[FIG. 3] is a side view of an ideal and non-limiting implementation or example of an unsuspended BAW resonator according to the principles of the present invention.

[FIG. 4A] is an isolated plan view of an ideal and non-limiting implementation or example of interdigitated electrodes according to the principles of the present invention, which can be used as the upper conductive layer, optionally the lower conductive layer, of an unsuspended BAW resonator. layer or both.

[FIG. 4B] is an isolated plan view of an ideal and non-limiting implementation or example of comb electrodes according to the principles of the present invention, which can be used as the upper conductive layer, optional lower conductive layer of an unsuspended BAW resonator. layer or both.

[FIG. 4C] is an isolated plan view of an ideal and non-limiting implementation or example of a sheet electrode according to the principles of the present invention, which can be used as the upper conductive layer, optional lower conductive layer of an unsuspended BAW resonator. layer or both.

[Figure 5A-5B] is an ideal and non-limiting implementation form or example of Figures 1 to 3, along the A-A line and the cross-sectional view of the B-B line.

[FIG. 6A-6B] are ideal and non-limiting implementation forms or examples of FIGS. 1 to 3, along the cross-sectional views of A-A line and B-B line.

[FIG. 7A-7B] are ideal and non-limiting implementation forms or examples of FIGS. 1 to 3, along the cross-sectional views of A-A line and B-B line.

[FIG. 7C] is a side view of an ideal and non-limiting implementation or example of an unsuspended BAW resonator in FIGS. 7A-7B, with material removed from the first and second connection structures and the tether conductors on both sides.

[Figs. 8A-8B] are ideal and non-limiting implementation forms or examples of Figs. 1 to 3, along the cross-sectional views of A-A line and B-B line.

[FIG. 8C] is a side view of the ideal and non-limiting implementation or example of the unsuspended BAW resonator in FIGS. 8A-8B, with material removed from the first and second connection structures and the tether conductors on both sides.

[FIG. 8D] is a side view of the ideal and non-limiting implementation or example of the unsuspended BAW resonator in FIGS. 8A-8B, with material removed from the first and second connection structures and the tether conductors on both sides.

[FIG. 9A-9B] are ideal and non-limiting implementation forms or examples of FIGS. 1 to 3, along the cross-sectional views of A-A line and B-B line.

[FIG. 9C] is a side view of an ideal and non-limiting implementation or example of an unsuspended BAW resonator in FIGS. 9A-9B, with material removed from the first and second connection structures and the tether conductors on both sides.

[FIG. 9D] is a side view of an ideal and non-limiting embodiment or example of an unsuspended BAW resonator in FIGS. 9A-9B, with the material on the first and second connection structures and the tether conductors on both sides removed. material.

[FIG. 10] is a graph of the frequency versus decibel of a resonator body. The resonator body has a lower conductive layer in the form of a sheet electrode and an upper conductive layer in the form of a sparse electrode. The finger spacing is 1.8 μm.

[FIG. 11] is an exemplary graph of frequency versus normalized vibration, specifically the resonant frequencies of modes 3 and 4, which can be used to illustrate the first to sixth examples of unsuspended BAW resonators described in this specification frequency response.

[FIG. 12] is a side view of an ideal and non-limiting implementation or example of an unsuspended BAW resonator in accordance with the principles of the present invention (for example, used here to illustrate the third unsuspended BAW resonator. example).

[FIG. 13] is a side view of an unsuspended BAW resonator according to an ideal and non-limiting implementation or example of the principles of the present invention (for example, used here to illustrate the fourth unsuspended BAW resonator. and the fifth example).

[FIG. 14] is a side view of an unsuspended BAW resonator according to an ideal and non-limiting implementation or example of the principles of the present invention (for example, used here to illustrate the sixth unsuspended BAW resonator. example).

For purposes of the following detailed description, it is to be understood that the invention may assume various alternatives and step sequences unless expressly indicated to the contrary. It should also be understood that the specific devices and methods described in the following specification are only exemplary implementation forms, examples, or aspects of the present invention. In addition, except in any operation examples or special instructions, this specification and the scope of patent applications In ideal and non-limiting embodiments, examples, aspects, the mentioned quantities of ingredients should in all cases be understood as the word "about". Accordingly, unless expressly indicated to the contrary, the numerical parameters set forth in the following specification and claims are approximations that may vary depending upon the desired properties to be obtained by the present invention. Accordingly, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements.

Also, it should be understood that any numerical range recited herein should include all subranges included therein. For example: a range of "1 to 10" is intended to include all subranges between (and including) the recited minimum value of 1 and the recited maximum value of 10 i.e., the minimum value is equal to or greater than 1 and the maximum value is equal to or less than 10.

It should also be understood that the specific devices and steps described in the drawings and the following description are only exemplary embodiments, examples or aspects of the present invention. Thus, exemplary embodiments, instances or aspects of the invention are not limited to specific dimensions or other relevant physical characteristics. Certain idealized and non-limiting embodiments, examples, or aspects of the present invention will be described by like element codes corresponding to identical or functionally equivalent elements in the drawings.

In the present invention, unless otherwise specified, the use of the singular may include the plural and the plural may surround the singular. Also, in the present invention, unless otherwise specified, "or" is used to mean "and/or", even though "and/or" may be used in a specific situation. Furthermore, in the present invention, the use of "a" means "at least one" unless otherwise stated.

For the purposes of the following description, the terms "end", "upper", "lower", "right", "Left", "Vertical", "Horizontal", "Top", "Bottom", "Landscape", "Vertical" and their derivatives shall relate to the example in the figure. However, it should be understood that the examples may assume various alternative situations and step sequences unless specifically stated otherwise. It should be noted that the specific examples recorded in the drawings and this specification are only illustrative examples or aspects of the present invention. Therefore, the illustrative examples or aspects disclosed herein should not be limited thereto.

As shown in FIG. 1, in an ideal and non-limiting implementation or example, according to the principles of the present invention, an unsuspended bulk acoustic wave resonator (UBAR) 2 is operable in bulk acoustic wave mode and includes a resonator body 4. It may comprise a stacked layer from top to bottom, the stacked layer comprising an upper conductive layer 6 , a piezoelectric layer 8 , an optional lower conductive layer 10 and a device layer 12 . In the UBAR 2 example shown in FIG. 1 , the bottom of the device layer 12 can be mounted, for example, directly on the mounting substrate or carrier 14 .

Referring to FIG. 2 and continuing with FIG. 1 , in an ideal and non-limiting implementation or example, according to the principles of the present invention, another UBAR2 example can be similar to the UBAR2 shown in FIG. 1 , where the difference is the resonance of FIG. 2 Device body 4 may include an optional substrate 16 between device layer 12 and carrier 14 . In one example, the bottom of device layer 12 may be mounted, eg, directly mounted on top of substrate 16 , and the bottom of substrate 16 may be mounted, eg, directly mounted on carrier 14 .

Referring to FIG. 3 and continuing with FIGS. 1 and 2, in an ideal and non-limiting implementation or example, according to the principles of the present invention, another UBAR2 example can be similar to the UBAR2 shown in FIG. 2, wherein the difference is that of FIG. The resonator body 4 may include an optional second substrate 16-1 between the device layer 12 and the piezoelectric layer 8 or the optional lower conductive layer 10, and/or between the second substrate 16-1 and the piezoelectric layer 10. A second device layer 12 - 1 is included between the electrical layer 8 or the optional lower conductive layer 10 . in a In an ideal and non-limiting implementation or example, if the resonator body 4 of FIG. 3 can further include one or more additional device layers 12 (not specifically shown) and/or one or more additional substrates 16 ( not specifically shown) is better. Another example resonator body 4 has several device layers 12 and substrate 16, and may comprise an exemplary sequence, from piezoelectric layer 8 or optional lower conductive layer 10 to carrier 14: first device layer , the first base material, the second device layer, the second base material; the third device layer, the third base material, etc. are thus continued. In an ideal and non-limiting implementation or example, the resonator body 4 may include a plurality of device layers 12 and/or a plurality of substrates 16, each device layer 12 may be made of the same or different materials, each substrate Material 16 can be made of the same or different materials. In an ideal and non-limiting implementation or example, the number of device layers 12 and the number of substrates 16 may be different. In one example, illustratively from piezoelectric layer 8 or optional lower conductive layer 10 to carrier 14, resonator body 4 may comprise device layer 12-1, substrate 16-1, device layer 12 as a resonator body The lowest level of 4. Examples of materials that can be used as each device layer 12 and each substrate 16 are described below.

In an ideal and non-limiting implementation or example, as shown in FIGS. 1-3, one or more temperature compensation layers 90, 92, 94 can be on the top surface of the upper conductive layer 6; Optionally between the lower conductive layer 10, and the device layer 12; and/or between the device layer 12 (or 12-1) and the substrate 16 (or 16-1). Each temperature compensation layer may contain at least one of silicon and oxygen. For example, each temperature compensation layer may include silicon dioxide, or a silicon element, and/or an oxygen element. One or more optional temperature compensation layers 90, 92, 94 may help to avoid changes in resonant frequency due to heat generated using the resonator body 4 in the examples shown in FIGS. 1-3.

In plan view, the resonator body 4 and/or UBAR 2 described in the present invention can To have a cube or cuboid shape. However, other shapes are conceivable for the resonator body 4 and/or the UBAR 2 .

As shown in FIGS. 4A-4C and continuing all previous figures, in an ideal and non-limiting implementation or example, one or both conductive layers 6 and optionally conductive layer 10 may be presented in the form of interdigitated electrodes 18. ( FIG. 4A ), which may include a conductive wire or elastic piece 20 , supported by a back 22 , crossed with a conductive wire or elastic piece 24 , supported by a back 26 . In an ideal and non-limiting implementation or example, one or both conductive layers 6 and optional conductive layer 10 may be presented in the form of comb electrodes 27 ( FIG. 4B ), which may include Extended conductive wire or shrapnel 28. The end of the conductive wire or spring 28 on the side opposite the first back 30 may be connected to an optional second back 32 (shown in dashed lines in FIG. 4B ). In an ideal and non-limiting implementation or example, one or two conductive layers 6 and optionally the conductive layer 10 may be in the form of conductive sheet electrodes 33 ( FIG. 4C ). Each wire or spring 20, 24 and 28 is presented as a straight line. In one example, each of the wires or clips 20, 24, and 28 may be an arcuate wire or clip, a helical wire or clip, or any other suitable and/or desired shape.

In an ideal and non-limiting implementation or example, the upper conductive layer 6 may be in the form of interdigitated electrodes 18 , comb electrodes 27 or sheet electrodes 33 . Independently of the form of the upper conductive layer 6 , the optional bottom conductive layer 10 may be in the form of interdigitated electrodes 18 , or comb electrodes 27 or sheet electrodes 33 . In the following, for descriptive purposes only, in an ideal and non-limiting embodiment or example, the upper conductive layer 6 will be described as being in the form of a comb electrode 27 comprising a first back 30 and an optional second Two backs 32 , and optional lower conductive layer 10 will be described in the form of sheet electrodes 33 . However, this embodiment is not limited thereto, and any one of the interdigitated electrodes 18, the comb electrodes 27, or the sheet electrodes 33 can also be used as the upper conductive layer. 6. Combining any one of the interdigitated electrodes 18, the comb electrodes 27, or the sheet electrodes 33 as an optional lower conductive layer 10.

In an ideal and non-limiting embodiment or example, the resonant frequency of the resonator body 4 with at least the upper conductive layer 6 in the form of interdigitated electrodes 18 or comb electrodes 27 in each example, regardless of the optional lower conductive layer The form of 10 can be adjusted or selected in a known manner by properly selecting the finger spacing 38 (eg, FIGS. 4A-4B ), wherein the finger spacing 38 = finger width + finger gap (between two adjacent fingers). In one example, the resonant frequency of each resonator body 4 may be increased by reducing the inter-finger spacing 38 in the transverse mode relative to the thickness mode for each resonator body 4 , but not all. In one example, the resonant frequency of each resonator body 4 may be reduced by increasing the inter-finger spacing 38 in the thickness mode relative to the transverse mode of each resonator body desired, but not all.

In an ideal and non-limiting implementation or example, the resonator body 4 of each example can be in a thickness mode, a transverse mode, or a hybrid/composite mode in which the thickness mode and the transverse mode are combined. For thickness mode resonance, the acoustic waves resonate in the thickness direction of the piezoelectric layer 8 , the resonant frequency is based on the thickness of the piezoelectric layer 8 , and the thickness of the upper conductive layer 6 and optionally the lower conductive layer 10 . The combination of piezoelectric layer 8, optional lower conductive layer 10, and upper conductive layer 6 may be referred to as a piezoelectric stack. The sound velocity determined by the resonant frequency of the resonator body 4 in each example described here is the composite sound velocity of the piezoelectric stack. In one example, the resonant frequency f can be calculated by dividing the composite sound velocity V _a by twice the piezoelectric stack thickness τ.

For transverse mode resonance, the acoustic waves resonate in the transverse direction (x or y direction) of the piezoelectric _layer 8, and the resonance frequency can be obtained by dividing the composite sound velocity V of the piezoelectric stack by twice the finger spacing 38, f = V _a /2 (refers to pitch). When the finger spacing is reduced from the large spacing size δ _L to the small spacing size δ _S , the percentage of frequency increase, PFI _calculation , in one example, can be calculated by the following formula PFI _Calculated =(δ _L -δ _S )/δ _S.

In one example, when the finger pitch 38 is reduced from 2.2 μm to 1.8 μm , the PFI for the transverse mode _{is calculated} to be 22.2%. In another example, when the finger pitch 38 is reduced from 1.8 μm to 1.4 μm , the PFI for the transverse mode _{is calculated} to be 28.5%.

20%。在複合模式共振的另一個例子中，橫向模式共振的部分L可以

30%。在複合模式共振的另一個例子中，橫向模式共振的部分L可以

40%。 Multiple mode resonances may include a portion of thickness mode resonance and a portion of transverse mode resonance. The portion L of the transverse mode resonance in a composite mode resonance can be obtained by changing the finger spacing 38 from a large pitch dimension δ _L to a small pitch dimension δ _S , the actual ratio or the measured percentage (PFI _measurement ) of the increased frequency to the calculated ratio of the increased frequency (PFI _calculation ), the ratio between the two is defined. Transverse mode resonance L values can be greater than 100% if there are one or more uncontrolled or unforeseen variations. In an example, the resonator body 4 may resonate in thickness mode, transverse mode or composite mode. In the example of a composite mode resonance, the portion L of the transverse mode resonance can be

20%. In another example of a composite mode resonance, the portion L of the transverse mode resonance can be

30%. In another example of a composite mode resonance, the portion L of the transverse mode resonance can be

40%.

In an ideal and non-limiting embodiment or example, a resonator body 4 has an optional lower conductive layer 10 in the form of plate electrodes 33 and an upper conductive layer 6 in the form of comb electrodes 27 , wherein a finger spacing 38 of 2.2 μm can resonate in a composite mode with the following mode resonant frequencies: mode 1 resonant frequency = 1.34 GHz; mode 2 resonant frequency = 2.03 GHz; and mode 4 resonant frequency = 2.82 GHz.

In one example, a resonator body 4 has an optional lower conductive layer 10 in the form of plate electrodes 33 and an upper conductive layer 6 in the form of comb electrodes 27 with a finger spacing 38 of 1.8 μm May resonate in composite modes with the following mode resonant frequencies: mode 1 resonant frequency = 1.49 GHz; mode 2 resonant frequency = 2.38 GHz; and mode 4 resonant frequency = 3.05 GHz. In this example, the L-percentages of the transverse-mode resonances of the composite-mode resonances may be: L-mode 1 = 53%; L-mode 2 = 78%; and L-mode 4 = 27%. See also FIG. 10 , which is a graph showing the relationship between frequency and dB of the resonator body 4 in this example. In FIG. 10, each resonant frequency 82, 84 and 88 represents the response of the resonator body 4 to different modes, mode 1 resonant frequency = 1.49 GHz; mode 2 resonant frequency = 2.38 GHz; and mode 4 resonant frequency = 3.05 GHz.

In one example, the Mode 1 resonant frequency may or alternatively be considered or associated with a Surface Acoustic Wave (SAW); the Mode 2 resonant frequency may or alternatively be considered or associated with the _S0 (or Extensional) mode; and The Mode 4 resonance frequency may or alternatively be considered or related to the A ₁ (or Flexural) mode. Additionally, the Mode 3 resonance frequency (described below) may or alternatively be considered or related to the Shear mode. SAW, S ₀ mode, extended mode, A ₁ mode, shear mode and flexure mode are known to those of ordinary skill and will not be further explained here.

In one example, a resonator body 4 with optional lower conductive layer 10 in the form of plate electrodes 33 and upper conductive layer 6 in the form of comb electrodes 27, wherein a finger spacing 38 of 1.4 μm can be obtained at Resonant in multiple modes with the following mode resonance frequencies: Mode 1 resonance frequency = 1.79 GHz; Mode 2 resonance frequency = 2.88 GHz; and Mode 4 resonance frequency = 3.36 GHz. In the resonator body 4 of this example, the transverse mode resonance percentage of the composite mode resonance L can be: L mode 1 = 70%; L mode 2 = 74%; and L mode 4 = 35%.

In one example, the aforementioned resonator body 4 in thickness mode, transverse mode, or composite mode can be applied to each UBAR 2 example shown in FIGS. The connecting structures 34 and 36 are combined, and the details will be described below.

Next, with reference to Figures 1-3, in an ideal and non-limiting implementation or example, the bottommost resonator bodies 4 shown in Figures 1-3 can be directly mounted using any suitable and/or desired mounting techniques. Mounted on the carrier 14, for example: eutectic mount, adhesive, etc. Here, "directly installed", "directly installed at" and similar phrases can be understood as the bottommost layer of each resonator body 4 shown in Figures 1-3, which is adjacent to the The carrier 14 is placed and bonded to the carrier 14, such as: in one example, mounting, connection, and/or by suitable and/or desired methods, such as: in one example, eutectic bonding, conductive adhesive, non-conductive Conductive adhesive, etc. In an ideal and non-limiting implementation or example, the carrier 14 may serve as the surface of a package, such as a conventional integrated circuit (IC) package. After the bottommost layer of the resonator body 4 is mounted to the surface of the aforementioned package, the resonator body 4, and generally the UBAR 2, is sealed in the aforementioned package in a known manner to protect the resonator body 4, more generally against External environmental conditions protect UBAR 2. In one example, the package uses a conventional ceramic IC package from the Japanese company NTK Ceramic Co., Ltd. for mounting the UBAR. However, this should not be interpreted in a limiting sense, as it is contemplated that the resonator body 4 and/or the UBAR 2 may be mounted in any suitable and/or desired package now known or later developed.

In another example, the carrier 14 may serve as the surface of a substrate, such as a ceramic sheet, a sheet of conventional printed circuit board material, or the like. The common features of Figures 1-3 for each substrate example are described here. The bottommost layer of the vibrator body 4 and/or UBAR 2 may be installed and is for illustrative purposes only and should not be construed as limiting. The carrier 14 can be made of any suitable and/or desired material that is compatible with the bottommost material of each resonator body 4 and/or UBAR 2 shown in FIGS. 1-3 and can The resonator body 4 and/or the UBAR 2 are used in a known manner. The carrier 14 may have any form deemed suitable and/or desirable by one of ordinary skill in the art. Accordingly, the present description is not limiting with respect to the mounting substrate or carrier 14 .

1-3, in an ideal and non-limiting implementation or example, each UBAR 2 may include one or more optional connection structures 34 and/or 36, which facilitate the application of electrical signals to the upper conductive layer 6 and optionally the lower conductive layer 10 of the resonator body 4 . However, in an ideal and non-limiting implementation or example, one or more of the optional connection structures 34 and/or 36 may be excluded (eg not provided), wherein electrical signals may be applied directly to the resonator body 4 The upper conductive layer 6 and the optional lower conductive layer 10. Thus, in one example, UBAR 2 may include resonator body 4 without connection structures 34 and 36 . In another example, the UBAR 2 may include the resonator body 4 and a separate connection structure 34 or 36 . Just to illustrate the present invention in detail, an ideal and non-limiting implementation or example of the UBAR 2 including the resonator body 4 and the connection structures 34 and 36 is described below.

Each connecting structure 34 and 36 can be presented in any suitable and/or desired form, can be formed by any suitable and/or desired method, and can be made of any suitable and/or desired material , these materials can help to provide independent electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10 . In one example, the upper conductive layer 6 is in the form of a comb electrode 27 with only one back 30 or 32, and the optional lower conductive layer 10 is one with only a back 30 or 32, or a sheet electrode 33. In the form of comb electrodes 27, electrical signals can be passed through A single connection structure 34 or 36 is provided to each of the upper conductive layer 6 and the optional lower conductive layer 10, and the single connection structure 34 or 36 may be configured to provide electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10, respectively .

In another example, wherein at least one of the upper conductive layer 6 or the optional lower conductive layer 10 has the form of an interdigitated electrode 18 or a comb-like electrode 27 and has two backs 30 and 32, via a separate connecting structure 34 and 36 to provide one or more electrical signals to the backs 22 and 26 of the interdigitated electrodes 18, and/or the backs 30 and 32 of the comb electrodes 27, respectively. The form of the upper conductive layer 6 and the optional lower conductive layer 10 and the way of providing electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10 should not be limiting.

In an ideal and non-limiting implementation or example, without being bound by any particular description, example, or theory, examples of the first and second connection structures 34 and 36 can be compared to the UBARs 2 shown in FIGS. 1-3 The example used together will be explained below.

In an ideal and non-limiting embodiment or example, only to illustrate the present invention in detail, as shown in FIGS. 1-3 , each connecting structure 34 and 36 will be described as an extension with various layers and/or substrate Various examples of resonator body 4 are formed. However, this will not be limiting, as it is contemplated that each connection structure 34 and 36 may have any suitable and/or desired form and/or structure that enables the connection of the upper conductive layer 6 and optionally the lower conductive layer 10 Provide one or more individual electrical signals.

In an ideal and non-limiting implementation or example, as shown in FIGS. 5A-5B , which are representations along the lines A-A and B-B in any or all of FIGS. 1-3 , FIG. The upper conductive layer 6 in the form of comb electrodes 27 on top of layer 8 comprises a back 30 and optionally a back 32 . In one example, the upper conductive layer 6 can be selected in the shape of interdigitated electrodes 18 presentation. In an ideal and non-limiting implementation or example, FIG. 5B shows that the optional lower conductive layer 10 under the piezoelectric layer 8 is in the form of a sheet electrode 33 (as shown by the dotted line in FIG. 5B ). In one example, the optional lower conductive layer 10 may optionally be presented in the form of interdigitated electrodes 18 or comb electrodes 27 . The following is only an example, and the upper conductive layer 6 and the optional lower conductive layer 10 will be described as being in the form of a comb electrode 18, including a back 30 and an optional back 32, and in the form of a sheet electrode 33. presented. However, this shall not be limiting.

In an ideal and non-limiting implementation or example, the connection structures 34 and 36 may include bottom metal layers 40 and 44 ( FIG. 5B ) contacting the pad electrode 33 formed as the resonator body 4. Optional lower conductive layer 10. Each of the bottom metal layers 40 and 44 may be in the shape of a sheet and covered with the piezoelectric layer 8 . In one example, each of the bottom metal layers 40 and 44 can be used as an extension of the sheet electrode 33 and formed simultaneously. In another example, each of the bottom metal layers 40 and 44 can be formed from the sheet electrode 33 respectively, and be made of the same or different material from the sheet electrode 33 . In one example, the connection structures 34 and 36 may also include top metal layers 42 and 46 on top of the piezoelectric layer 8 and the backsides 30 and 46 respectively contacting the comb electrodes 27 formed as the conductive layer 6 on the resonator body 4. Back 32.

In one example, bottom metal layers 40 and 44 may be connected to contact pads 48 on the top surfaces of first and second connection structures 34 and 36 by conductive vias 50 formed in piezoelectric layer 8, the conductive vias 50 extends between the aforementioned contact pad 48 and the bottom metal layers 40 and 44 . For example, each of the top metal layers 42 and 46 may have a sheet shape and be separated from the corresponding contact pad 48 by a gap (not numbered). Each top metal layer 42 and 46 may also include a contact pad 58 . The contact pads 48 can be connected and, if desired, each contact pad 48 can be connected to a suitable signal source (not shown), which can be electrically driven/biased in any suitable and/or desired manner. The lower conductive layer 10. Likewise, the contact pads 58 may be connected, and optionally each contact pad 58 may be connected to a suitable signal source (not shown), which may be electrically driven/biased in any suitable and/or desired manner. upper conductive layer 6.

As shown in the component codes 18 and 27 in Figures 5A-5B, the upper conductive layer 6 can also be in the form of interdigitated electrodes 18, and the optional lower conductive layer 10 can also be in the form of comb electrodes 27 or interdigitated electrodes 18 .

As shown in Figures 6A-6B, which are representative diagrams along the lines A-A and B-B in any or all of Figures 1-3, in an ideal and non-limiting implementation or example, in Figures 6A-6B The example is similar to the example in Figures 5A-5B, except for at least the following differences. Bottom metal layers 40 and 44 may each be in the form of a pair of spaced apart conductors 52 (relative to the conductive pads shown in FIGS. 5A-5B ) connected to pad electrodes 33 by lateral conductors 54 and tether conductors 56 The optional lower conductive layer 10. Top metal layers 42 and 46 may each be in the form of conductor 60 . Each conductor 60 may be connected to the back 30 or back 32 of the comb electrode 27 formed as the upper conductive layer 6 by a tether conductor 62 . Tether conductor 62 may be vertically aligned with and separated from tether conductor 56 by piezoelectric layer 8 . In one example, as shown in FIGS. 6A-6B , tether conductor 62 may be less wide than conductor 60 , and tether conductor 56 may be about the same width as tether conductor 62 .

As shown in Figure 7A-7B, which is a representative diagram along the lines A-A and B-B in any or all of Figures 1-3, in an ideal and non-limiting implementation or example, in Figure 7A-7B The example is similar to the example in Figures 6A-6B, except for at least the following differences. Part or all of the material of each of the connection structures 34 and 36 on both sides of the tether conductors 62 and 56, portions of the connection structures may be removed to form trenches that may resonate with the remainder of the connection structures. Between the body 4 of the UBAR, on both sides of the aforementioned tether conductors, extend some or all of the distance from the top to the bottom of the UBAR 2. In one example, the removal of some or all of the material of each connection structure 34 and 36 on both sides of the tether conductors of the aforementioned connection structures defines a tether structure 76, which may include the tether conductors 62 and 56. And a portion of the piezoelectric layer 8 is vertically aligned with the tether conductor 62 .

Referring to FIG. 7C and continued reference to FIGS. 7A-7B , in one ideal and non-limiting implementation or example, some or all of the material of each connection structure 34 and 36 is removed on both sides of the tether conductors 62 and 56, The aforementioned connection structure can be used in any UBAR 2 example in Fig. 1-3. For example: FIG. 7C is a side view of an example of the UBAR 2 in FIG. 1, in the material of the first and second connection structures 34 and 36 on both sides of the tether conductors 62 and 56, as shown in FIGS. 7A-7B, the aforementioned link structure. As can be understood from FIGS. 7A-7C , on both sides of the tether conductors 62 and 56 of the aforementioned connection structures, the material from which the respective connection structures 34 and 36 are removed may include an upper conductive layer 6, a piezoelectric layer 8, an optional Portions of the lower conductive layer 10 and the device layer 12, therefore, are not visible in the trenches formed by the removal of the respective connection structures 34 and 36 on either side of the tether conductors 62 and 56 of the aforementioned connection structures in FIGS. 7A-7B. s material. In the example shown in FIGS. 7A-7C , each tether structure 76 may comprise, from top to bottom: tether conductor 62 , the portion of piezoelectric layer 8 vertically aligned with tether conductor 62 , optional tether conductor 56 (when lower conductive layer 10 is present), and the portion of device layer 12 that is vertically aligned with tether conductor 62 .

In another example, in which the UBAR 2 comprises a substrate 16 (FIG. 2), indicated in dashed line in FIG. 7C and optionally one or more additional device layers 12-1 and/or substrate 16-1 (FIG. 3) , in the forming material of each additional device layer 12-1 and/or substrate 16-1 ( FIG. 3 ) and substrate 16 on both sides of the tether conductors 62 and 56, each connection structure 34 and 36 can also be removed part, so in Fig. 7A-7B have no material visible in the grooves formed by the removal of the respective connection structures 34 and 36 on both sides of the tether conductors 62 and 56 of the aforementioned connection structures.

In one example, FIGS. 7A-7B are diagrams of an example of the UBAR 2 in FIG. 2, each tether structure 76 may include, from top to bottom: the tether conductor 62, the piezoelectric layer 8 and the portion vertically aligned with the tether conductor 62 , optional tether conductor 56 (when optional lower conductive layer 10 is present), the portion of device layer 12 vertically aligned with tether conductor 62 , and the portion of substrate 16 vertically aligned with device layer 12 . In another example, FIGS. 7A-7B are diagrams of an example of UBAR 2 in FIG. 3 , each tether structure 76 may include, from top to bottom: portion, optional tether conductor 56 (when optional lower conductive layer 10 is present), portions of device layers 12 and 12-1 vertically aligned with tether conductor 62, and substrates 16 and 16-1 with tether The vertically aligned portion of conductor 62 .

As shown in Figures 8A-8B, which are representative diagrams along the lines A-A and B-B in any or all of Figures 1-3, in an ideal and non-limiting implementation or example, in Figures 8A-8B The example is similar to the example in Figures 7A-7B, except for at least the following differences. That is, all or part of the material forming at least one device layer 12 or 12-1 of each connecting structure 34 and 36 remains on both sides of the tether conductors 62 and 56 of the aforementioned connecting structure, so the aforementioned at least one device layer 12 or 12-1 The material of 12-1 can be seen in the grooves on both sides of the tether conductors 62 and 56 of the aforementioned connection structure. In one example, FIGS. 8A-8C are diagrams of an example of the UBAR 2 in FIG. 1 , each tether structure 76 may include, from top to bottom: the tether conductor 62, the piezoelectric layer 8 and the portion vertically aligned with the tether conductor 62 , optional tether conductor 56 (when optional lower conductive layer 10 is present). In this example, the device layer 12 is retained in the trench and can be seen in Figures 8A-8B.

In another example, Figures 8A-8B are diagrams of the UBAR 2 example of Figure 2, Each tether structure 76 may comprise, from top to bottom: tether conductor 62, a portion of piezoelectric layer 8 vertically aligned with tether conductor 62, optional tether conductor 56 (when optional lower conductive layer 10 is present) ), the portion of the device layer 12 vertically aligned with the tether conductor 62 . In this example, the device layer 12 is retained in the trench and is visible in FIGS. 8A-8B , and the substrate 16 underlying the device layer 12 is also retained (indicated by the dashed line in FIG. 8C ), but is not visible in FIGS. 8A-8B. groove.

In another example, FIGS. 8A-8B are diagrams of the UBAR 2 example in FIG. 3 , each tether structure 76 may include, from top to bottom: the tether conductor 62 , the piezoelectric layer 8 and the tether conductor 62 vertically aligned. Portion, optional tether conductor 56 (when optional lower conductive layer 10 is present), portion of device layer 12 vertically aligned with tether conductor 62 . In one example, the device layer 12 is retained and is visible in the trenches of FIGS. Structure 76 also includes portions of device layer 12 - 1 and substrate 16 - 1 that are vertically aligned with tether conductor 62 . In another example, device layer 12-1 is retained and visible in the trenches of Figures 8A-8B, and substrates 16, 16-1 and device layer 12 are also retained but not visible in the trenches of Figures 8A-8B.

As another example, as shown in FIG. 8D, the diagram of the UBAR 2 example in FIG. 1 or 2, each tether structure 76 may include, from top to bottom: the tether conductor 62, the piezoelectric layer 8 and the vertical alignment of the tether conductor 62. Portion, optional tether conductor 56 (when optional lower conductive layer 10 is present), portion of the body of device layer 12 vertically aligned with tether conductor 62, by partially removing the The device layer 12 on both sides of the tether conductors 62 and 56 exposes portions of the body of the device layer 12 that are vertically aligned with the tether conductors 62 . Where the example of FIG. 8D is the UBAR 2 shown in FIG. 2, the substrate 16 (shown in dashed line in FIG. 8D) may remain under the device layer 12 but is not visible in FIGS. 8A-8B.

In another example, the example of UBAR 2 referred to in FIG. Tether conductor 56 (when optional lower conductive layer 10 is present), the body of device layer 12, or the portion of device layer 12-1 vertically aligned with tether conductor 62, is partially removed at each connection structure 34 and 36. The device layer 12 or the device layer 12-1 on both sides of the tether conductors 62 and 56 (similar to FIG. Vertically aligned sections. In one example, when a part of the body of the device layer 12 of the UBAR 2 shown in FIG. As seen in the trenches in 8A-8B, each tether structure 76 may also include portions of the device layer 12 - 1 and substrate 16 - 1 that are vertically aligned with the tether conductor 62 . In this example, the substrate 16 is retained, ie, no portion of the substrate 16 has been removed and will not be shown in FIGS. 8A-8B .

In another example, when a part of the body of the device layer 12-1 of the UBAR 2 shown in FIG. Each tether structure 76 may also include a portion of the device layer 12 - 1 that is vertically aligned with the tether conductor 62 as seen in the trench in - 8B. In this example, the substrate 16, 16-1 and device layer 12 are retained, ie none of the substrate 16, 16-1 and device layer 12 are removed and will not be shown in FIGS. 8A-8B. .

Referring to Figures 9A-9B, which are representations along the lines A-A and B-B in any or all of Figures 1-3, the UBAR 2 of Figure 2 in an ideal or non-limiting implementation or example, Figures 9A-9B The example shown is similar to the example of Figures 8A-8B, with at least the following exceptions. Each tether structure 76 may comprise a portion of the material forming the device layer 12, wherein as shown in FIGS. 9A-9C, Portions of substrate 16 are visible in trenches formed on either side of tether conductors 62 and 56 of each connection structure 34 and 36 . In this example, substrate 16 is retained and each tether structure 76 may comprise, from top to bottom: tether conductor 62, the portion of piezoelectric layer 8 vertically aligned with tether conductor 62, optional tether conductor 56 (when the optional lower conductive layer 10 is present), and the portion of the device layer 12 vertically aligned with the tether conductor 62 .

Next, referring to FIGS. 9A-9B, in an ideal and non-limiting implementation or example of the UBAR 2 shown in FIG. 3, the device layer 12 and the substrate 16, 16-1 are retained as shown in FIGS. 9A-9B, Substrate 16 - 1 can be seen in trenches formed on either side of tether conductors 62 and 56 of each connection structure 34 and 36 . In this example, each tether structure 76 may comprise, from top to bottom: tether conductor 62, the portion of piezoelectric layer 8 aligned vertically with tether conductor 62, optional tether conductor 56 (when optional lower conductive layer 10 ), and the portion of the device layer 12 - 1 vertically aligned with the tether conductor 62 .

In another example, the UBAR 2 shown in FIG. 3, in which the substrate 16 is retained, can be seen in FIGS. In the grooves formed, each tether structure 76 may include, from top to bottom: the tether conductor 62, the portion of the piezoelectric layer 8 vertically aligned with the tether conductor 62, the optional tether conductor 56 (when there is an optional lower conductive layer 10), the portion of the device layer 12-1 that is vertically aligned with the tether conductor 62, the portion of the substrate 16-1 that is vertically aligned with the tether conductor 62, and the portion of the device layer 12 that is vertically aligned with the tether conductor 62 part.

In another example shown in FIG. 9D, in the example of UBAR 2 shown in FIG. Part of the body of the substrate 16 forms the material, wherein as shown in FIG. 9D, Bottoms 64 and 70 of connection structures 34 and 36 are exposed, bottoms 66 and 68 of resonator body 4 are exposed, and surfaces 72 and 74 of the body of substrate 16 are exposed. In this example, the removed portion of the material forming the body of substrate 16 may extend to the plane of FIG. 9D and the portion of material of substrate 16 aligned vertically with each tether structure 76 . In this example, each tether structure 76 may comprise, from top to bottom: tether conductor 62, the portion of piezoelectric layer 8 aligned vertically with tether conductor 62, optional tether conductor 56 (when optional lower conductive layer 10 ), the portion of the device layer 12 vertically aligned with the tether conductor 62 , and the portion of the substrate 16 vertically aligned with the tether conductor 62 and close to the device layer 12 . In this example, surfaces 72 and 74 are seen in the trenches of Figures 9A-9B.

In another alternative example, in the UBAR 2 example shown in FIG. 3, part of the material forming the substrate 16-1 or 16 may be removed laterally below the resonator body 4 and the connection structures 34 and 36, similar to removing The forming material of substrate 16 in FIG. 9D, wherein the forming material surfaces of substrate 16-1 or 16 (such as surfaces 72 and 74) are exposed and visible in the grooves of FIGS. 9A-9B.

In one example, each tether structure 76 may also be used when the surfaces of the forming material of the substrate 16-1 of the UBAR 2 example of FIG. Including the portion of the device layer 12 - 1 vertically aligned with the tether conductor 62 and the portion of the substrate 16 - 1 forming material vertically aligned with the tether conductor 62 and close to the device layer 12 - 1 . In this example, only part of the body of the substrate 16-1 is removed to form the trenches, and the device layer 12 and substrate 16 are retained, ie, no part of the device layer 12 and substrate 16 is removed. , is not visible in Figures 9A-9B.

In another example, when the forming material surfaces of the substrate 16 of the example of UBAR 2 in FIG. 76 may also include portions of device layer 12-1 vertically aligned with tether conductor 62, substrate 16-1 The portion vertically aligned with the tether conductor 62, the portion of the device layer 12 vertically aligned with the tether conductor 62, the portion of the substrate 16 forming material vertically aligned with the tether conductor 62 and adjacent to the device layer 12. In this example, only a portion of the bulk of the substrate 16-1 is removed to form the trenches.

In an ideal and non-limiting implementation or example, the bottom metal layers 40 and 44 of the connection structures 34 and 36 need not be present when the lower conductive layer 10 is not present in the previously discussed examples.

In an ideal and non-limiting implementation or example, each of the aforementioned tether structures 76 may include at least the tether conductor 62, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), The portion of the electrical layer 8 that is vertically aligned with the tether conductor 62 . In another ideal and non-limiting implementation or example, each tether structure 76 may include one or more of the following portions vertically aligned with the tether conductor 62: device layer 12, substrate 16, device layer 12-1 , and/or substrate 16-1. However, there is no limitation here.

In an ideal and non-limiting implementation or example, the resonator body 4 in each example shown in FIGS. 1-3 has at least the upper conductive layer 6, the optional lower conductive layer 10, and the The width of the portions of the piezoelectric layer 8 may be the same. That is, or, in one example, the width of device layer 12, substrate 16, device layer 12-1, and/or substrate 16-1 may be comparable to the width of upper conductive layer 6, optional lower conductive layer 10, and pressure The electrical layers 8 have the same width and/or size.

In an ideal and non-limiting implementation or example, any one or multiple surfaces of the resonator body 4 and/or any one or multiple connecting structures 34 and/or any one of the examples shown in FIGS. 1-3 One or all of the surfaces of 36 may be suitably etched as appropriate and/or desired, desirably optimizing the quality factor and/or insertion loss profile of any of the UBAR 2 examples in FIGS. 1-3. For example, the upper and lower surfaces of the resonator body 4 in any of the examples shown in FIGS. 1-3 may be etched. that is Alternatively, any one or a plurality of sides of the resonator body 4 in the examples shown in FIGS. 1-3 may be etched, wherein the aforementioned sides are perpendicular to the plane.

In an ideal and non-limiting implementation or example, wherein the upper conductive layer 6, the optional lower conductive layer 10, or both are in the form of interdigitated electrodes 18, a back 22 of the aforementioned interdigitated electrodes 18 Or 26 may be connected and driven by a suitable signal source, while the other back 22 or 26 may not be connected to a signal source. In another ideal and non-limiting implementation or example, wherein the upper conductive layer 6, the optional lower conductive layer 10, or both are in the form of interdigitated electrodes 18, a back of the aforementioned interdigitated electrodes 18 22 can be connected and driven by a signal source, and a back 26 of the aforementioned interdigitated electrode 18 can be connected and driven by a second signal source. In one example, the second signal source can be the same as or different from the first signal source.

60 x 10⁶Pa-s/m³。在另一個例子中，各裝置層12(或12-1)的例子之聲阻抗可為

90 x 10⁶Pa-s/m³。在另一個例子中，各裝置層12(或12-1)的例子之聲阻抗可為

500 x 10⁶Pa-s/m³。在一個理想及非限制的實施型態或例子中，各基材16的聲阻抗可為

100 x10⁶Pa-s/m³。在另一個例子中，各基材16的聲阻抗可為

60 x10⁶Pa-s/m³。 In an ideal and non-limiting implementation or example, the acoustic impedance of each device layer 12 (or 12-1) instance may be

60 x 10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each instance of device layer 12 (or 12-1) may be

90 x 10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each instance of device layer 12 (or 12-1) may be

500 x 10 ⁶ Pa-s/m ³ . In an ideal and non-limiting implementation or example, the acoustic impedance of each substrate 16 can be

100 x10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each substrate 16 may be

60 x10 ⁶ Pa-s/m ³ .

In an ideal and non-limiting implementation or example, the acoustic reflectivity (R) of the interface of the device layer 12 , the piezoelectric layer 8 , or the optional lower conductive layer 10 may be greater than 50%. In another example, the acoustic reflectance (R) of the interface of the device layer 12, the piezoelectric layer 8, or the optional lower conductive layer 10 may be greater than 70%. In another example, the acoustic reflectance (R) of the interface of the device layer 12, the piezoelectric layer 8, or the optional lower conductive layer 10 may be greater than 90%.

In an ideal and non-limiting implementation or example, the device layer 12 or 12-1, and the piezoelectric layer 8, or the optional lower conductive layer 10, the acoustic reflection rate (R) of the interface can be greater than 70%. In one example, the interface reflectance R of any two layers 6 and 8; 8 and 10; 8 or 10 and 12 or 12-1; or 12 or 12-1 and 16 or 16-1, or the device layer 12 or 12 The interface reflectance R between -1 and the substrate 16 or 16-1 can be calculated by the following equation: R=|(Zb-Za)/(Za+Zb)|

where Za = acoustic impedance of the first layer, eg piezoelectric layer 8 or optional lower conductive layer 10 , which is located on top of the second layer; and Zb = acoustic impedance of the second layer, eg device layer 12 .

Other examples of the first layer and the second layer may include an example in which the device layer 12 or 12 - 1 is on the substrate 16 or 16 - 1 .

In one ideal and non-limiting implementation or example, the overall reflectivity (R) of any instance of the resonator body 4 shown in FIGS. 1-3 may be >90%.

In an ideal and non-limiting implementation or example, the device layer 12 may be a diamond layer or SiC formed by prior art. In one example, substrate 16 may be formed of silicon.

In an ideal and non-limiting implementation or example, the diamond-formed device layer 12 can be grown by chemical vapor deposition of diamond on the substrate 16 or 16-1 or a sacrificial substrate (not shown). . In an ideal and non-limiting implementation or example, the optional lower conductive layer 10, piezoelectric layer 8, and upper conductive layer 6 can be deposited on the device layer 12 and patterned as required (for example: comb electrodes 27 or the interdigitated electrodes 18), the traditional semiconductor manufacturing technology used therein will not be described here.

Here, each temperature compensation layer 90 , 92 , 94 may contain at least one of silicon or oxygen. For example, each temperature compensation layer may include silicon dioxide, or silicon element, and/or oxygen element.

100。在另一個例子，圖1-3所示之各UBAR 2可以具有無負載品質因子

50。在一個理想及非限制的實施型態或例子中，圖1-3所示各共振器本體4例子之壓電層8、各裝置層12及基材16的厚度可選擇以任何適合及/或期望的方式，優化共振器本體4的，性能。相同地，在一個例子中，圖1-3所示的各例子共振器本體4之尺寸可根據目標性能做選擇，不具限制性地舉例：插入損失、功率承載能力、及熱耗散。在一個理想及非限制的實施型態或例子中，當鑽石作為裝置層12的材料使用時，前述鑽石層的表面在下層12的介面可以用光學方法完成及/或其物理上為密集。在一個例子中，形成裝置層12的鑽石材料可以為未摻雜或摻雜，例如：P型或N型。該鑽石材料可以為多晶體、奈米晶體或超奈米晶體。在一個例子中，當矽用作各基材16例子的材料時，前述矽可以為未摻雜或摻雜，例如：P型或N型，及單晶體或多晶體。形成裝置層的鑽石材料可以有拉曼半高峰寬

20cm^-1。 In an ideal and non-limiting implementation or example, each UBAR 2 shown in FIGS. 1-3 may have an unloaded figure of merit

100. In another example, each UBAR 2 shown in Figures 1-3 may have an unloaded figure of merit

50. In an ideal and non-limiting implementation or example, the thicknesses of the piezoelectric layer 8, the device layers 12 and the substrate 16 of each resonator body 4 example shown in FIGS. 1-3 can be selected in any suitable and/or The performance of the resonator body 4 is optimized in a desired manner. Likewise, in one example, the dimensions of the resonator body 4 shown in FIGS. 1-3 can be selected according to the target performance, such as, without limitation, insertion loss, power carrying capacity, and heat dissipation. In an ideal and non-limiting implementation or example, when diamond is used as the material of the device layer 12 , the interface between the surface of the diamond layer and the lower layer 12 can be optically completed and/or physically dense. In one example, the diamond material forming the device layer 12 can be undoped or doped, such as P-type or N-type. The diamond material can be polycrystalline, nanocrystalline or ultrananocrystalline. In one example, when silicon is used as the material of each substrate 16 , the aforementioned silicon can be undoped or doped, such as: P-type or N-type, and single crystal or polycrystalline. The diamond material forming the device layer can have a Raman half peak width

20cm ^-1 .

In an ideal and non-limiting implementation or example, the piezoelectric layer 8 can be made of ZnO, AlN, InN, alkali metal or alkaline earth metal niobate, alkali metal or alkaline earth metal titanate, alkali metal or alkaline earth metal tantalum Iron ore, GaN, AlGaN, lead zirconate titanate (PZT), polymers or doped forms of any of the foregoing materials.

In an ideal and non-limiting embodiment or example, the device layer 12 may be formed of any suitable and/or desired high acoustic impedance material. For example: a material with an acoustic impedance between 10 ⁶ Pa-s/m ³ and 630 x 10 ⁶ Pa-s/m ³ or higher than 630 x 10 ⁶ Pa-s/m ³ can be considered a high acoustic impedance material . Some non-limiting examples of typical high acoustic impedance materials that may be used, such as to form any of the device layers 12 described herein, may include: Diamond (~630 x 10 ⁶ Pa-s/m ³ ); W (~99.7 x 10 ⁶ Pa-s/m ³ ); SiC; a condensed phase material such as a metal, such as Al, Pt, Pd, Mo, Cr, Ir, Ti, Ta; elements of group 3A or 4A of the periodic table; elements of group 1B of the periodic table , 2B, 3B, 4B, 5B, 6B, 7B or 8B transition elements; ceramics; glasses and polymers. This non-limiting list of high acoustic impedance materials is not limited thereto.

In an ideal and non-limiting embodiment or example, the substrate 16 may be formed of any suitable and/or desired low acoustic impedance material. For example: a material having an acoustic impedance between 10 ⁶ Pa-s/m ³ and 30 x 10 ⁶ Pa-s/m ³ can be considered a low acoustic impedance material. Some non-limiting examples of typical low acoustic impedance materials that can be used, such as forming any of the substrates ¹⁶ described herein, can include at least ^one of: ceramic; Metal, glass, crystal, minerals with acoustic impedance between ⁶ Pa-s/m ³ ; ivory (1.4 x 10 ⁶ Pa-s/m ³ ); alumina/sapphire (25.5 x 10 ⁶ Pa-s/m 3 ³ ); alkali metal K (1.4 x 10 ⁶ Pa-s/m ³ ); silicon dioxide and silicon (19.7 x 10 ⁶ Pa-s/m ³ ). This non-limiting list of low acoustic impedance materials is not limited thereto.

In one ideal and non-limiting implementation or example, one or more materials generally considered to be high acoustic impedance materials may be used as the low acoustic impedance of the resonator body 4, depending on the choice of material from which the resonator body 4 is formed in each example. resistive material. For example: when diamond or SiC is used as the material of the device layer 12 , W can be used as the material of the substrate 16 . Thus, by achieving the desired reflectivity R of the two-layer interface or the resonator body 4 (as described above), it is possible to decide which materials can be used for high acoustic impedance and which for low acoustic impedance.

In an ideal and non-limiting embodiment or example, the integrated acoustic wave resonator may include a resonator body 4 according to the principles of the present invention. The resonator body 4 may include a piezoelectric layer 8; a device layer 12; an upper conductive layer 6 located above the piezoelectric layer 8 and the piezoelectric The other side of the layer is the aforementioned device layer 12 . The entire surface of the device layer 12 opposite to the piezoelectric layer 8 is substantially used for mounting the resonator body 4 on the carrier 14 separated from the resonator body 4 . In this case, it is desirable, but not necessary, that the entire surface of the aforementioned device layer on the side opposite to the aforementioned piezoelectric layer is used to mount the entire resonator body on the carrier. In this example, it is desirable but not necessary that the BAW resonator may include connection structures 34 or 36 to conduct signals to the upper conductive layer. In one example, the device layer may comprise diamond or SiC. In one example, the upper conductive layer 6 may include a plurality of conductive wires or elastic pieces with spaces. In one example, the aforementioned resonator body 4 may further include an optional lower conductive layer 10 positioned between the piezoelectric layer 8 and the device layer 12 .

In an ideal and non-limiting implementation or example, the resonator body 4 may further include a substrate 16 connected to the aforementioned device layer 12 and the other side of the aforementioned device layer is the aforementioned piezoelectric layer 8 . In one example, the entire surface of the aforementioned device layer 12 can be installed into the aforementioned substrate 16 . In one example, the entire surface of the substrate 16 facing the aforementioned carrier 14 can be directly installed into the aforementioned carrier 14 .

In an ideal and non-limiting implementation or example, the surface of the device layer 12 facing the carrier 14 can be entirely installed into the substrate 16 . In one example, the surface of the aforementioned device layer 12 facing the aforementioned carrier 14 may be entirely mounted into the aforementioned carrier 14 .

In an ideal and non-limiting implementation or example, the resonator body 4 may further include a second device layer 12-1, which is located between the substrate 16 and the piezoelectric layer 8; or the second substrate 16-1 , which is located between the substrate 16 and the piezoelectric layer 8; or includes both.

In an ideal and non-limiting implementation or example, the use of "entire installation" herein may mean the direct installation of one layer or substrate, or the indirect installation of another layer or substrate. In one example, the use of "entire installation" herein may refer to, or instead of There is no deliberate space or separation between layers or substrates. In another example, the use of "whole installation" herein may refer to or instead include naturally occurring spaces between one layer or substrate and another layer or substrate, which are naturally occurring and are not intentional.

Some non-limiting implementation forms or examples of UBAR have been described, and the first to sixth UBAR examples will be described here.

First UBAR example: a mode 3 and or mode 4 resonance with device layer enabled and with temperature compensation layer.

Referring to FIG. 1 , in some non-limiting implementations or examples, a first UBAR2 example (as shown in FIG. 1 ) may include from the top to the carrier 14: conductive wires or shrapnel 20 or 28 including interspaces. The upper conductive layer 6 (as shown in FIGS. 4A to 4B ), the piezoelectric layer 8 formed of LiNbO ₃ , the temperature compensation layer 92 formed of SiO ₂ and the device layer 12 formed of diamond or SiC. In one example, the finger spacing 38 (as shown in FIGS. 4A-4B ) is 0.6 μm and the thickness of the piezoelectric layer 8 is 0.6 μm.

Throughout the present invention, the value of the variable "λ" may be based on one or more dimensions of the pattern or feature defined by the upper conductive layer, or on the thickness of the piezoelectric layer 8 . In some non-limiting implementations or examples, the lambda value can be twice the finger spacing 38 or twice the thickness of the piezoelectric layer 8 (1.2 μm in this example). However, this should not be construed as limiting, as the lambda value may be based on the thickness of one or more layers and/or any other suitable and/or desired configuration of one or more patterns or features in each of the UBAR examples described herein. desired size. In this example, the cutting angle of the piezoelectric layer 8 is 0° (or 180°), sometimes referred to as Y-cut or YX-cut. In some non-limiting implementations or examples, it is conceivable that the cutting angle of the piezoelectric layer 8 is 0° (or 180°)±20°. Here, unless otherwise specified, the cutting angle of the piezoelectric layer 8 refers to the cutting angle relative to the rotation of the X-axis.

In a partially non-limiting implementation or example, in order to mold the first UBAR2 instance, for a plurality or a plurality of different exemplary values of the thickness of the temperature compensation layer 92 formed of SiO ₂ , in the first UBAR2 instance Exemplary electrical stimulation frequency sweeps (eg: 1 GHz to 6.2 GHz) were performed to confirm the frequency response (frequency vs. Zhenfu). In a molded example, the thickness of the temperature compensation layer 92 formed by _SiO2 is between (9/16) λ and (1/64) λ, in various thickness values, an exemplary electrical stimulation frequency is performed in the first UBAR2 example at least between 1GHz and 6.2GHz. In one example, a frequency sweep between at least 1 GHz and 6.2 GHz can determine a first graph, graph or relationship of frequency vs. vibration for temperature compensation layer 92 thickness such as (9/16)λ. In one example, a frequency sweep between at least 1 GHz and 6.2 GHz can determine another graph, graph or relationship of frequency vs. vibration for temperature compensation layer 92 thickness such as (3/64)λ. Doing frequency sweeps at different thicknesses of the temperature compensating layer 92 can determine additional frequency vs. vibration graphs, graphs or relationships.

At least Mode 4 resonant frequency 88 was observed in each frequency vs. Zhenfu graph, graph or relationship (FIGS. 10 and 11). In the first UBAR example, however, the mode 4 resonant frequency 88 was unexpectedly observed at 5.2 GHz (Fig. 11) relative to the mode 4 resonant frequency 88 observed at 3.05 GHz (Fig. 10), and the mode 3 resonant observed at 3.13 GHz Frequency 86 (Figure 11).

In FIG. 11 , for the sake of simplicity, the resonant frequencies 82 and 84 of mode 1 and mode 2 (as shown in FIG. 10 ) are omitted to the left of the resonant frequency 86 of mode 3 . However, it should be understood that in addition to mode 3 and mode 4 resonant frequencies 86 and 88, there may also be mode 1 and mode 2 resonant frequencies 82 and 84 (as shown in FIG. Show).

In some non-limiting implementations or examples, as shown in FIG. 11 , in each graph, diagram or relationship of frequency vs. vibration, mode 3 resonant frequency 86 includes positive peak f _s1 and negative peak f _p1 , mode 4 Resonant frequency 88 includes positive peak f _s2 and negative peak f _p2 .

For illustrative purposes only, the "resonance frequency" observed at "approximately" a specific frequency recorded here can be any representative frequency of the positive peak f _s1 and the negative peak f _p1 for the mode 3 resonance frequency 86, for the mode 4. The resonant frequency 88 can be any representative value of the positive peak f _s2 and the negative peak f _p2 . Accordingly, any resonant frequency stated herein as being "about" a particular frequency should not be limiting.

In some non-limiting implementation forms or examples, when the thickness of the temperature compensation layer 92 formed by _SiO2 is (1/16)λ, the mode 3 coupling efficiency of the resonant frequencies 86 and 88 of mode 3 and mode 4 ( M3CE) and mode 4 coupling efficiency (M4CE) can be determined by the following equations EQ1 and EQ2 respectively: EQ1: Mode 3 coupling efficiency (M3CE)=(π ² /4)(( f _p1 - f _s1 )/ f _p1 ) EQ2: Mode 4 Coupling Efficiency (M4CE)=(π ² /4)(( f _p2 - f _s2 )/ f _p2 ) where, when the exemplary values of f _p1 and f _s1 are 3.738GHz and 3.13GHz respectively, M3CE= 40.093%; and when the exemplary values of f _p2 and f _s2 are 5.442GHz and 5.172GHz respectively, M4CE=12.229%.

8%、

11%、

14%、

17%或

20%為可令人滿意、適合及/或所期望的，此例中前述M3CE值不應具有限制性。此外或取代性地，因M4CE之值

3%、

4%、

6%、

8%或

10%為可令人滿意、適合及/或所期望的，此例中前述M4CE值不應具有限制性。 However, due to the value of M3CE

8%,

11%,

14%,

17% or

20% is satisfactory, suitable and/or desirable, and the aforementioned M3CE value should not be limiting in this case. Additionally or alternatively, due to the value of M4CE

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desirable, and the aforementioned M4CE values should not be limiting in this case.

8%、

11%、

14%、

17%或

20%時，則壓電層8之切割 角度可以延伸超過上述0°(或180°)±20°，例如：切割角度為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如為LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M3CE之特定期望值。 In some non-limiting implementations or examples, when a specific M3CE value is desired such as

8%,

11%,

14%,

17% or

When 20%, the cutting angle of the piezoelectric layer 8 can extend beyond the above-mentioned 0° (or 180°) ± 20°, for example: the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain a specific desired value of M3CE.

3%、

4%、

6%、

8%或

10%時，則壓電層8之切割角度可以延伸超過上述130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementations or examples, when a specific M4CE value is desired such as

3%,

4%,

6%,

8% or

When 10%, the cutting angle of the piezoelectric layer 8 can extend beyond the above-mentioned 130°±30° (sometimes called Y-cut 130±30 or YX-cut 130 ± 30), for example, the cutting angle is: 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is non-limiting such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain a certain desired value of M4CE.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，該厚度值不應具有限制性。 In some non-limiting implementations or examples, using the equations EQ1 and EQ2 and the frequency vs. vibration charts, diagrams or relationships determined above, a number of thickness values for the temperature compensating layer 92 are obtained, derived from _SiO2 The thicknesses of the formed temperature compensation layer 92 for optimizing the resonant frequencies of mode 3 and mode 4 are respectively determined as (3/64)λ and (1/32)λ. However, the thickness of the temperature compensation layer 92 formed by SiO ₂ can be any suitable and/or desired and non-limiting thickness, such as

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, this thickness value should not be limiting.

Second UBAR example: a mode 3 and or mode 4 resonance with device layer enabled and no temperature compensation layer.

In some non-limiting embodiments or examples, for comparison and/or modeling purposes, an exemplary electrical stimulation frequency sweep (e.g., 1 GHz to 6.2 GHz) was performed on a second UBAR2 instance to confirm the frequency response, the second The layers of the UBAR2 example are similar to the above-mentioned first UBAR2 example (as shown in FIG. 1 ), except that the second UBAR2 example does not include the temperature compensation layer 92 . Enter Run a frequency scan to confirm a graph, graph or relationship of Frequency vs. Zhenfu.

Using equations EQ1 and EQ2 and frequency vs. Zhenfu graphs, diagrams or relationships confirmed by frequency sweeps, the coupling efficiencies M3CE and M4CE for the mode 3 and mode 4 resonant frequencies 86 and 88 of the second UBAR2 example can be identified as: f _p1 When the values of f p2 and f _s1 are 3.738GHz and 3.13GHz respectively, M3CE=40.093%; when the values of f _p2 and f _s2 are 6.194GHz and 5.96GHz respectively, M4CE=9.312%.

8%、

11%、

14%、

17%或

20%為可令人滿意、適合及/或所期望的，此例之前述M3CE值不應具有限制性。此外或取代性地，因M4CE值

3%、

4%、

6%、

8%或

10%為可令人滿意、適合及/或所期望的，此例之前述M4CE值不應具有限制性。 However, due to the M3CE value

8%,

11%,

14%,

17% or

20% is satisfactory, suitable and/or desirable, and the aforementioned M3CE values for this example should not be limiting. Additionally or alternatively, due to the M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desirable, and the aforementioned M4CE values for this example should not be limiting.

8%、

11%、

14%、

17%或

20%，壓電層8之切割角度可延伸超過前述切割角度0°(或180°)±20°，例如切割角為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子，壓電層8不具限制性的例如為LiNbO₃晶體，生產自Z切割或X切割的期望切割角度亦可能得到期望的特定M3CE值。 In some non-limiting implementations or examples, when a specific M3CE value is desired, such as

8%,

11%,

14%,

17% or

20%, the cutting angle of the piezoelectric layer 8 can extend beyond the aforementioned cutting angle 0° (or 180°) ± 20°, for example, the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting implementations or examples, the piezoelectric layer 8 is, for example, LiNbO ₃ crystal, which can be produced from a Z-cut or X-cut desired cut angle to obtain a desired specific M3CE value.

3%、

4%、

6%、

8%或

10%，壓電層8之切割角度可以延伸超過130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementations or examples, when a specific M4CE value is desired, such as

3%,

4%,

6%,

8% or

10%, the cutting angle of the piezoelectric layer 8 can extend beyond 130°±30° (sometimes called Y-cut 130±30 or YX-cut 130 ± 30), for example, the cutting angle is: 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is non-limiting such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain a certain desired value of M4CE.

It can be understood from the M4CE values of UBAR2 with and without the above-mentioned temperature compensation layer 92 that when UBAR2 has a temperature compensation layer 92 formed of SiO ₂ , its coupling efficiency is relatively large. Conversely, UBAR2 does not have a temperature compensation layer 92 formed of SiO ₂ When layer 92, its coupling efficiency is small. In some non-limiting implementations or examples, generally speaking, it is more desirable to obtain a coupling efficiency with a larger value.

Third UBAR example: one that enables mode 3 and/or mode 4 resonance of the device layer and has a temperature compensation layer and an aluminum nitride layer.

Referring to FIG. 12 with continued reference to FIG. 11 , in some non-limiting embodiments or examples, an exemplary electrical stimulation was performed at a third UBAR2 example (shown in FIG. 12 ) for comparison and/or modeling purposes. Frequency sweep (eg: 1 GHz to 6.2 GHz) to confirm frequency response, the third UBAR2 example is similar in all respects to the first UBAR2 example above, with the exception of the third UBAR2 with at least the following exceptions: i.e., the third UBAR2 example is A layer of aluminum nitride AlN 96 is included between the device layer 12 formed by SiC and the temperature compensation layer 92 formed by _SiO2 . The temperature compensation layer 92 is on the aluminum nitride 96 (as shown in FIG. 12 ), and the aluminum nitride 96 has a thickness of (7/16)λ, the temperature compensation layer 92 formed of SiO ₂ has a thickness of (11/128)λ, and the device layer 12 formed of diamond or SiC has a thickness of (90/16)λ. In this example, λ corresponds to 1.6 µm. A frequency scan is then performed to confirm a graph, graph or relationship of frequency vs. Zhenfu.

Using equations EQ1 and EQ2 and a graph, graph or relationship of frequency vs. Zhenfu as confirmed by the frequency sweep, the coupling efficiencies M3CE and M4CE for the mode 3 and mode 4 resonant frequencies 86 and 88 of the third UBAR2 example in FIG. 12 are determined to be : When the values of f _p1 and f _s1 are 3.608GHz and 3.032GHz respectively, M3CE=39.351%; when the values of f _p2 and f _s2 are 5.02GHz and 4.8GHz respectively, M4CE=10.802%.

8%、

11%、

14%、

17%或

20%可為令人滿意的、適合及/或所期望的。此外或取代性地，此例中前述的M4CE值不具有限制性，因M4CE

3%、

4%、

6%、

8%或

10%可為令人滿意的、適合及/或所期望的。 However, the aforementioned M3CE value in this example is not restrictive because M3CE

8%,

11%,

14%,

17% or

20% may be satisfactory, suitable and/or desired. Additionally or alternatively, the aforementioned M4CE values in this example are not limiting, since M4CE

3%,

4%,

6%,

8% or

10% may be satisfactory, suitable and/or desired.

8%、

11%、

14%、

17%或

20%，壓電層8之切割角度可延伸超過前述切割角度0°(或180°)±20°，例如切割角為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子，壓電層8不具限制性的例如為LiNbO₃晶體，生產自Z切割或X切割的期望切割角度亦可能得到期望的特定M3CE值。 In some non-limiting implementations or examples, when a particular M3CE value is desired such as

8%,

11%,

14%,

17% or

20%, the cutting angle of the piezoelectric layer 8 can extend beyond the aforementioned cutting angle 0° (or 180°) ± 20°, for example, the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting implementations or examples, the piezoelectric layer 8 is, for example, LiNbO ₃ crystal, which can be produced from a Z-cut or X-cut desired cut angle to obtain a desired specific M3CE value.

3%、

4%、

6%、

8%或

10%，壓電層8之切割角度可以延伸超過130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementations or examples, when a specific M4CE value is desired, such as

3%,

4%,

6%,

8% or

10%, the cutting angle of the piezoelectric layer 8 can extend beyond 130°±30° (sometimes called Y-cut 130±30 or YX-cut 130±30), for example, the cutting angle is: 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is non-limiting such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain a certain desired value of M4CE.

In the above-mentioned first to third examples, the UBARs, M3CE and M4CE values of the piezoelectric layer 8 formed by the 0° (or 180°) cut LiNbO ₃ crystal were confirmed. In a partially non-limiting implementation or example, applicants have discovered that cutting the piezoelectric layer 8 formed of _LiNbO crystals at 130° (sometimes referred to as YX cut 130° or Y cut 130°) can enhance or optimize the mode 4 Coupling efficiency M4CE at resonance frequency 88. In one example, the cutting angle of the piezoelectric layer 8 formed by LiNbO ₃ crystals can be 130°±30°, such as in the range of 100° to 160°; ideally, it is 130°±20°, such as 110° to 150°; ideally 130°±10°, for example in the range of 120° to 140°. However, this ± value or range is not limiting.

In addition, in some non-limiting implementation forms or examples, the applicant found that when the UBAR2 is formed, the piezoelectric layer 8 (formed of LiNbO ₃ crystals and at about 130° (±30°, or ±20°, or ±10°) between the angle cut) and the device layer 12 (when the substrate 16 is omitted) or the substrate 16 (when the device layer 12 is omitted) or both the device layer 12 and the substrate 16, with alternating low The coupling efficiency M4CE at the mode 4 resonant frequency 88 can be enhanced or optimized with a high acoustic impedance layer. In some non-limiting embodiments or examples, the UBAR 2 has alternating low and high acoustic impedance layers which may include a device layer 12 formed of diamond, SiC, W, Ir, or AlN and a substrate formed of silicon 16. In some non-limiting embodiments or examples, UBAR 2 having alternating low and high acoustic impedance layers may include substrate 16 formed of silicon, but may exclude device layer 12 .

Fourth UBAR example: a stack enabled flex mode (mode 4) comprising at least one low acoustic impedance layer and one high acoustic impedance layer, and optionally a device layer.

Referring to FIG. 13 with continued reference to FIG. 11 , in some non-limiting implementations or examples, a fourth UBAR2 instance (as shown in FIG. 13 ) consists of alternating layers of low and high acoustic impedance material, which may include : between the piezoelectric layer 8 (formed of LiNbO ₃ crystal and cut at an angle of about 130° (±30°, ±20°, ±10°)) and the (optional) device layer 12 or substrate 16, It has a first low acoustic impedance layer 100 , a first high acoustic impedance layer 102 , a second low acoustic impedance layer 104 , a second high acoustic impedance layer 106 and a third low acoustic impedance layer 108 . In this example, the finger spacing 38 of the conductive wires or springs 20 or 28 (as shown in FIGS. 4A and 4B ) containing spaces in the upper conductive layer 6 is 1.2 μm, the value of λ is 2.4 μm, and the thickness of the piezoelectric layer is λ /2. If there is a device layer 12, its thickness is 4λ, and the thickness of the substrate 16 is 20 μm. In this example, the piezoelectric layer 8 may be cut at an angle of 100° to 160° for molding purposes.

In some non-limiting implementations or examples, each of the low-acoustic impedance layers 100, 104, and 108 can be formed from silicon dioxide (SiO ₂ ), and each of the high-acoustic impedance layers 102 and 106 can be formed from a metal, such as Tungsten (W), the device layer 12 can be formed from diamond or SiC, and the substrate 16 can be formed from silicon. In one example, the device layer 12 is optional, wherein the third low acoustic resistance layer 108 may directly contact the substrate 16 and the second high acoustic resistance layer 106 .

In some non-limiting embodiments or examples, for modeling purposes, an exemplary electrical stimulation frequency sweep (e.g., 1 GHz to 6.2 GHz) was performed on several fourth UBARs 2 instances to confirm the frequency response (frequency vs. .amplitude), with and without the device layer 12, respectively, at multiple different cut angles of the piezoelectric layer 8 from 100° to 160°, at different exemplary thicknesses of the low acoustic impedance layers 100, 104, and 108 , The different exemplary thicknesses of the high acoustic impedance layers 102 and 106 are, for example, carried out in the manner of the aforementioned first UBAR2. In other words, an exemplary electrical stimulation frequency sweep (eg: 1 GHz to 6.2 GHz) was performed to confirm the frequency response (frequency vs. amplitude) at several fourth UBARs 2 examples with different combinations of the preceding UBARs 2 examples: (1) With device layer 12 or without device layer 12; (2) multiple different cutting angles of piezoelectric layer 8 from 100° to 160°; (3) different thicknesses of low-acoustic impedance layers 100, 104 and 108; (4) Different thicknesses of the high acoustic impedance layers 102 and 106 .

In some non-limiting implementation forms or examples, the cutting angles of the piezoelectric layer 8, the thicknesses of the low acoustic impedance layers 100, 104 and 108 are set at the same value (the first value), and the respective high acoustic impedance The thicknesses of the resistance layers 102 and 106 are fixed at the same value (the second value), and an exemplary electrical stimulation frequency sweep is carried out in the fourth UBARs 2 example, the frequency is, for example, 1GHz to 6.2GHz, and the fourth Frequency response of UBARs 2 example sweeps. Then, changing only the thickness of the low acoustic impedance layer (first value) or the thickness of the high acoustic impedance layer (second value), repeat the frequency sweep, and record the response frequency of the fourth UBARs 2 instance. In order to characterize the frequency response of the different thickness values of the low acoustic impedance layer and the high acoustic impedance layer of the fourth UBARs 2 example, the process was repeated several times for different thickness values of the low acoustic impedance layer and the high acoustic impedance layer. In some non-limiting implementations or examples, different thicknesses of the low acoustic impedance layers and/or the high acoustic impedance layers may be the same or different. In some non-limiting implementations or examples, diamond, SiC, W, Ir, AlN, etc. can be used as high acoustic impedance materials. A chart, graph, or relationship identifying frequency vs. amplitude for each frequency sweep.

By means of EQ2 and the frequency sweep of the fourth UBAR2 example to confirm the frequency vs. amplitude chart, graph, or relationship, the ideal coupling efficiency M4CE of the mode 4 resonance frequency 88 of the fourth UBAR2 example in Figure 13 is with and without In the case of having the device layer 12: M4CE=15.888% when f _p2 and f _s2 are 5.43GHz and 5.08GHz respectively

For example: the cutting angle of the piezoelectric layer 8 is 130°, the thickness of each low-acoustic impedance layer 100, 104, 108 is (1/16)λ, and the thickness of each high-acoustic impedance layer 102, 106 is (1/16)λ .

3%、

4%、

6%、

8%或

10%可為令人滿意、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。在一個例子中，M4CE值

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或所期望的值如前述之130°±30°而達成。在部分非限制的實施型態及例子中，壓電層8不具限制性的如LiNbO₃晶體產自Z切割或X切割的期望切割角度亦可能得到期望的特定M4CE值。 Due to M4CE value

3%,

4%,

6%,

8% or

10% may be satisfactory, suitable and/or desirable, the aforementioned M4CE value should not be limiting in this instance. In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value such as the aforementioned 130° ± 30°. In some non-limiting embodiments and examples, the piezoelectric layer 8 is non-limiting, such as LiNbO ₃ crystals produced by Z-cut or X-cut desired cut angles may also obtain the desired specific M4CE value.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ。各低聲抗阻層及/或各高聲抗阻層之厚度可與任一其他低聲抗阻層及/或各高聲抗阻層之厚度不同(或相同)。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同時皆不具有限制性。 Furthermore, the aforementioned thickness of each low acoustic impedance layer and/or each high acoustic impedance layer should not be limiting, since the aforementioned thickness of each low acoustic impedance layer and/or each high acoustic impedance layer may be suitable and / or the desired thickness, without limitation, for example may be

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8) lambda. Each low acoustic impedance layer and/or each high acoustic impedance layer may have a different (or the same) thickness as any other low acoustic impedance layer and/or each high acoustic impedance layer. Therefore, there is no limitation when the thickness of the low acoustic impedance layer is the same, the thickness of the high acoustic impedance layer is the same, or the thickness of the low acoustic impedance layer is the same as that of the high acoustic impedance layer.

Fifth UBAR example: a stack enabled flex mode (mode 4) comprising at least one low acoustic impedance layer and one high acoustic impedance layer, and optionally a device layer.

Continue referring to FIG. 11 and FIG. 13 , in some non-limiting implementations or examples, similar to the type of the fourth UBAR 2 example described above, for each of the piezoelectric layers 8 from 100° to 160° Exemplary electrical stimulation frequency sweeps (eg: 1GHz to 6.2GHz) were performed at different thickness values of the low acoustic impedance layer and the high acoustic impedance layer of the fifth UBAR 2 example for molding purposes at different cutting angles Frequency response (frequency vs. amplitude), the aforementioned fifth UBAR 2 example is similar in every respect to the aforementioned fourth UBAR 2 example (as shown in FIG. 13 ) with the following exception: namely, the omission of the low-acoustic impedance layer 108 . A chart, graph, or relationship identifying frequency vs. amplitude for each frequency sweep.

Ideal Coupling Efficiency M4CE for Mode 4 Resonant Frequency 88 of Fifth UBAR 2 Example with and without Device Layer 12 Using Equation EQ2 and Frequency vs. Amplitude Graph, Graph, or Relationship Confirmed for Fifth UBAR 2 Example Consistent with the fourth UBAR 2 example, that is: when f _p2 and f _s2 are 5.43GHz and 5.08GHz respectively, M4CE=15.888%.

When the cutting angle of the piezoelectric layer 8 is 130°, the thickness of each of the low acoustic impedance layers 100 and 104 is (1/16)λ, and the thickness of each of the high acoustic impedance layers 102 and 106 is (1/16)λ.

In some non-limiting implementations or examples, the thicknesses of the low acoustic impedance layers and/or the thicknesses of the high acoustic impedance layers may be the same or different. In some non-limiting embodiments or examples, diamond, SiC, W, AlN, Ir, etc. can be used as the material of each high-acoustic resistance layer.

3%、

4%、

6%、

8%或

10%時為令人滿意的、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。在一個例子中，M4CE值

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或期望的值而達成，如前述130°±30°。在部分非限制性的實施型態或例子中，壓電層8例如為不具限制性的LiNbO₃晶體，產自Z切割或X切割之切割角度亦可能得到所期望的特定M4CE值。 Due to M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desirable, and the aforementioned M4CE values in this case should not be limiting. In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value, such as the aforementioned 130°±30°. In some non-limiting implementations or examples, the piezoelectric layer 8 is, for example, a non-limiting LiNbO ₃ crystal, and the cutting angle produced by Z-cut or X-cut may also obtain the desired specific M4CE value.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，各低及/或高聲抗阻層之厚度可能與任一其他低及/或高聲抗阻層之厚度不同或相同。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同時皆不具有限制性。 In addition, the thickness of each low acoustic impedance layer and/or each high acoustic impedance layer should not be restrictive, because the thickness of each low acoustic impedance layer and/or each high acoustic impedance layer can ideally be and/or expected, without limitation, for

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, the thickness of each low and/or high acoustic impedance layer may be different or the same as the thickness of any other low and/or high acoustic impedance layer. Therefore, there is no limitation when the thickness of the low acoustic impedance layer is the same, the thickness of the high acoustic impedance layer is the same, or the thickness of the low acoustic impedance layer is the same as that of the high acoustic impedance layer.

This result suggests that there may be little advantage in having one or more additional low acoustic impedance layers between the high acoustic impedance layer 106 and the device layer 12 or substrate 16 or both.

Sixth UBAR Example: A stack enabled flex mode (mode 4) comprising at least one low acoustic impedance layer and one high acoustic impedance layer, and optionally a device layer. Referring to FIG. 14 with continued reference to FIG. 11 , in some non-limiting implementations or examples, a sixth UBAR 2 example (shown in FIG. 14 ) is formed from alternating low and high acoustic impedance layer materials from piezoelectric layer 8 (formed from LiNbO ₃ crystal with a cut angle of 130° (±30° or ±20° or ±10°)) to the device layer 12 may include: a first low acoustic impedance layer 100, a first high acoustic impedance layer 102, the second low acoustic impedance layer 104, the second high acoustic impedance layer 106, the third low acoustic impedance layer 108, the third high acoustic impedance layer 110, the fourth low acoustic impedance layer 112, the fourth highest Acoustic impedance layer 114, fifth low acoustic impedance layer 116, fifth high acoustic impedance layer 118, sixth low acoustic impedance layer 120, sixth high acoustic impedance layer 122, seventh low acoustic impedance layer 124 , the seventh high acoustic impedance layer 126 , the eighth low acoustic impedance layer 128 , the eighth high acoustic impedance layer 130 and the ninth low acoustic impedance layer 132 .

In this example, the finger spacing 38 of the conductive wires or springs 20 or 28 (as shown in Figures 4A and 4B ) containing spaces in the upper conductive layer 6 is 1.2 μm, the lambda value is 2.4 μm, and the thickness of the piezoelectric layer is ( 0.2)λ, the thickness of each low-acoustic impedance layer is (1/16)λ and the thickness of the device layer 12 is 4λ.

In order to mold the sixth UBAR 2 example with several different cutting angles from 100° to 160° according to the piezoelectric layer 8, an exemplary electrical stimulation frequency sweep (for example: 1GHz to 6.2GHz) was performed on the sixth UBARs 2 example to confirm The frequency response is performed at different exemplary thicknesses of the high acoustic impedance layer, for example, in the manner of the aforementioned fourth UBAR2. In this example, for each cutting angle of each piezoelectric layer 8 and each frequency sweep, each high acoustic impedance layer has the same thickness. A chart, graph, or relationship identifying frequency vs. amplitude for each frequency sweep.

In some non-limiting implementations or examples, each low-acoustic resistance layer can be formed from silicon dioxide (SiO ₂ ), each high-acoustic resistance layer can be formed from, for example, aluminum nitride (AlN), and the device layer 12 Can be formed from diamond or SiC and substrate 16 can be formed from silicon.

Using equation EQ2 and a graph, graph or relationship of the frequency response identified for the sixth UBAR 2 example, the ideal coupling efficiency M4CE for the mode 4 resonant frequency 88 of the sixth UBAR 2 example can be identified as: when the f _p2 and f _s2 values are equal to At 5.38GHz and 5.09GHz, M4CE=13.287%, when the piezoelectric layer 8 has a cutting angle of 130° and the thickness of each high acoustic impedance layer is (5/16)λ.

In some non-limiting implementations or examples, the thicknesses of the low acoustic impedance layers and/or the high acoustic impedance layers may be the same or different. In some non-limiting implementations or examples, diamond, SiC, W, AlN, etc. can be used as the material of each high acoustic resistance layer.

3%、

4%、

6%、

8%或

10%時為令人滿意的、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。此外，前述各低聲抗阻層及/或各高聲抗阻層之厚度不應具有限制性，因各低聲抗阻層及/或各高聲抗阻層之厚度可為適合的及/或所期望、不具限制性

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，各低及/或高聲抗阻層之厚度可與任一其他各低及/或高聲抗阻層之厚度不同(或相同)。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同皆不具有限制性。 Due to M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desirable, and the aforementioned M4CE values in this case should not be limiting. In addition, the thickness of each low acoustic impedance layer and/or each high acoustic impedance layer should not be restrictive, because the thickness of each low acoustic impedance layer and/or each high acoustic impedance layer can be suitable and/or or desired, without limitation

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, the thickness of each low and/or high acoustic impedance layer may be different (or the same) as that of any other low and/or high acoustic impedance layer. Therefore, the same thickness of the low acoustic impedance layer, the same thickness of the high acoustic impedance layer, or the same thickness of the low acoustic impedance layer and the same thickness of the high acoustic impedance layer are not restrictive.

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或期望的值而達成，例如前述130°±30°。在部分非限制性的實施型態或例子中，壓電層8不具限制性的例如LiNbO₃晶體，並以Z切割或X切割之特定角度切割，亦可得到特定期望的M4CE值。 In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value, such as the aforementioned 130°±30°. In some non-limiting implementations or examples, the piezoelectric layer 8 is not limited to, for example, LiNbO ₃ crystals, and is cut at a specific angle of Z-cut or X-cut to obtain a specific desired M4CE value.

In some non-limiting implementation forms or examples, the aforementioned first to sixth The modeling of UBARs 2 examples is represented by computer simulation and, in some cases, in one or more actual examples.

In some non-limiting implementations or examples, it can be known from the aforementioned first to sixth UBARs 2 examples that the piezoelectric layer 8 formed from LiNbO ₃ and cut at an angle of 130° or approximately can obtain an ideal M4CE value. However, in some non-limiting implementation forms or examples, the piezoelectric layer 8 formed from LiNbO ₃ and cut at an angle of 100° to 160° can also obtain an ideal M4CE value; the piezoelectric layer 8 formed from LiNbO ₃ And cutting at an angle of 110° to 150° can obtain a more ideal M4CE value; the piezoelectric layer 8 formed from LiNbO ₃ and cutting at an angle of 120° to 140° can further obtain a more ideal M4CE value. However, the piezoelectric layer 8 formed from _LiNbO3 and cut at an angle of 130° gives the most desirable (highest) M4CE value.

0.5λ、

0.4λ、

0.3λ或

0.2λ。 In any UBAR example described here, the thickness of the piezoelectric layer, such as LiNbO ₃ , can be any suitable and/or desired thickness, for example, in the flexural mode example of mode 4, the thickness is

0.5λ,

0.4λ,

0.3λ or

0.2λ.

2λ、

1.6λ、

1.2λ或

0.8λ。 In any UBAR example described here, the thickness of the piezoelectric layer, such as LiNbO ₃ , can be any suitable and/or desired thickness, for example, in the shear mode example of mode 3, the thickness is

2λ,

1.6λ,

1.2λ or

0.8λ.

0.010λ、

0.013λ、

0.016λ、

0.019λ或

0.022λ。 In any UBAR example described here, the thickness of electrodes such as Al, Mo, W, etc., can be any suitable and/or desired thickness, for example,

0.010λ,

0.013λ,

0.016λ,

0.019λ or

0.022λ.

50nm、

100nm、

150nm或

200nm。 In any UBAR example described here, the thickness of the device layer such as diamond, SiC, AlN, etc., can be any suitable and/or desired thickness, such as

50nm,

100nm,

150nm or

200nm.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 In any of the UBAR examples described here, the thickness of the low acoustic resistance layer may be suitable and/or desired, such as

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13 lambda.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 In any UBAR example described here, the thickness of the high acoustic impedance layer may be suitable and/or desired, such as

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13 lambda.

2λ、

1.5λ、

1.0λ、

0.5λ或

0.3λ。理想地，在此所記載之任一UBAR例子之一個或更多或全部外表面被可選的鈍化層所保護。該鈍化層可以為一層介電材料，如AlN、SiN、SiO₂等。 In any UBAR example described here, the thickness of the temperature compensation layer may be suitable and/or desired, such as

2λ,

1.5λ,

1.0λ,

0.5λ or

0.3λ. Desirably, one or more or all of the outer surfaces of any of the UBAR examples described herein are protected by an optional passivation layer. The passivation layer can be a layer of dielectric material, such as AlN, SiN, SiO ₂ and so on.

0.1GHz,

0.5GHz、

1.0GHz、

1.5GHz或

2.0GHz。 The resonant frequency of any of the UBAR examples described here can be

0.1GHz,

0.5GHz,

1.0GHz,

1.5GHz or

2.0GHz.

3%、

4%、

6%、

8%或

10%。 The coupling efficiency of any of the UBAR examples described here can be

3%,

4%,

6%,

8% or

10%.

Any of the UBAR examples described herein will resonate in a mode that includes a bulk acoustic wave, shallow bulk acoustic waves may include but are not limited to S ₀ mode, extended mode, shear mode, A ₁ mode, flexural mode, etc., and Composite mode.

Further non-limiting implementations or examples are illustrated in the following numbered embodiments.

[Example]

Embodiment 1: A bulk acoustic wave resonator includes: a resonant body, which includes: a piezoelectric layer, the aforementioned piezoelectric layer is a single crystal of LiNbO ₃ ; a device layer; and an upper conductive layer, which is located on the aforementioned piezoelectric layer Above and on the other side of the piezoelectric layer is the device layer; wherein the entire surface of the device layer on the opposite side to the piezoelectric layer is substantially used to mount the resonator body on the carrier and separate the resonator body.

Embodiment 2: The bulk acoustic wave resonator as in Embodiment 1, wherein the single crystal of LiNbO ₃ can be cut at an angle of 130°±30°, ±20° or ±10°.

Embodiment 3: The bulk acoustic wave resonator as in Embodiment 1 or 2, wherein the single crystal of LiNbO ₃ can be cut at an angle of 0°±30°, ±20° or ±10°.

0.1GHz、

0.5GHz、

1.0GHz、

1.5GHz或

2.0GHz。 Embodiment 4: The bulk acoustic wave resonator of any one of embodiments 1 to 3 may include a resonance frequency of mode 3 or mode 4

0.1GHz,

0.5GHz,

1.0GHz,

1.5GHz or

2.0GHz.

8%、

11%、

14%、

17%或

20%；及模式4共振之耦合效率

3%、

4%、

6%、

8%或

10%。 Embodiment 5: The bulk acoustic wave resonator of any one of embodiments 1 to 4, which may include at least one of the following: coupling efficiency of mode 3 resonance

8%,

11%,

14%,

17% or

20%; and coupling efficiency of mode 4 resonance

3%,

4%,

6%,

8% or

10%.

0.5λ、

0.4λ、

0.3λ或

0.2λ。 Embodiment 6: The bulk acoustic wave resonator of any one of embodiments 1 to 5, wherein _the single crystal thickness of LiNbO in mode 4 resonance can be

0.5λ,

0.4λ,

0.3λ or

0.2λ.

2λ、

1.6λ、

1.2λ或

0.8λ。 Embodiment 7: The bulk acoustic wave resonator of any one of embodiments 1 to 6, wherein the single crystal thickness of LiNbO in mode ₃ resonance can be

2λ,

1.6λ,

1.2λ or

0.8λ.

0.010λ、

0.013λ、

0.016λ、

0.019λ或

0.022λ。 Embodiment 8: The bulk acoustic wave resonator according to any one of embodiments 1 to 7, further comprising a conductive layer between the piezoelectric layer and the device layer, with a thickness of

0.010λ,

0.013λ,

0.016λ,

0.019λ or

0.022λ.

50nm、

100nm、

150nm或

200nm。 Embodiment 9: The bulk acoustic wave resonator of any one of embodiments 1 to 8, wherein the thickness of the device layer can be

50nm,

100nm,

150nm or

200nm.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 Embodiment 10: The bulk acoustic wave resonator according to any one of embodiments 1 to 9, further comprising a low-acoustic impedance material between the piezoelectric layer and the device layer, the acoustic impedance of the aforementioned low-acoustic impedance material is between Between 10 ⁶ Pa-s/m ³ and 30 x 10 ⁶ Pa-s/m ³ , the thickness is

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13 lambda.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 Embodiment 11: The bulk acoustic wave resonator according to any one of embodiments 1 to 10, further comprising a high acoustic impedance material between the piezoelectric layer and the device layer, the acoustic impedance of the aforementioned high acoustic impedance material is between 10 ⁶ Pa-s/m ³ and 630 x 10 ⁶ Pa-s/m ³ , with a thickness of

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13 lambda.

2λ、

1.5λ、

1.0λ、

0.5λ或

0.3λ。 Embodiment 12: The bulk acoustic wave resonator according to any one of embodiments 1 to 11, further comprising a temperature compensation layer between the piezoelectric layer and the device layer, the aforementioned temperature compensation layer comprising silicon and oxygen, with a thickness of

2λ,

1.5λ,

1.0λ,

0.5λ or

0.3λ.

Embodiment 13: The bulk acoustic wave resonator of any one of embodiments 1 to 12 further comprising a passivation layer.

70μm、

20μm、

10μm、

6μm或

4μm。 Embodiment 14: The bulk acoustic wave resonator according to any one of embodiments 1 to 13, wherein the above-mentioned upper conductive layer may comprise at least one set of conductive shrapnel with spaces. The aforementioned at least one group of conductive shrapnel with interspaces can have a finger spacing of

70μm ,

20μm ,

10μm ,

6 μm or

4 μm .

Embodiment 15: as the bulk acoustic resonance of any embodiment in embodiment 1 to 14 The device further includes a plurality of alternating temperature compensation layers and high acoustic impedance layers between the piezoelectric layer and the device layer.

Embodiment 16: The bulk acoustic wave resonator according to any one of embodiments 1 to 15, wherein the aforementioned device layer may further include the following: diamond; W; SiC; Ir, AlN, Al; Pt; Pd; Mo; Cr ; Ti; Ta; elements of group 3A or 4A on the periodic table; transition elements of group 1B, 2B, 3B, 4B, 5B, 6B, 7B or 8B on the periodic table; ceramics; glass and polymers.

The object of the present invention has been described in detail based on what is presently believed to be the most ideal practical and non-limiting embodiment, example or configuration, but it should be understood that such details are for that purpose only and the invention is not limited to the disclosed ideal and non-limiting An embodiment, instance or type of. On the contrary, the description is intended to cover modifications and equivalent arrangements within the spirit and scope of its claims. For example: It should be understood that the present invention will try to consider any or more ideal and non-limiting embodiments, examples, types or technologies of the appended patent scope, which can be combined with one or more other ideal and non-limiting Embodiments, examples, forms, or technical combinations of the appended claims.

2: Bulk Acoustic Resonator (UBAR)

6: Upper conductive layer

8: Piezoelectric layer

10: Optional lower conductive layer

12: Device layer

14: carrier

34, 36: Connection structure

90, 92: temperature compensation layer

96: aluminum nitride

Claims (18)

A bulk acoustic wave resonator, characterized by comprising: a resonator body, comprising: a piezoelectric layer, the piezoelectric layer is a single crystal of LiNbO ₃ ; a device layer, located below the piezoelectric layer; at least a pair of A temperature compensation layer and a high acoustic impedance layer are located between the aforementioned piezoelectric layer and the aforementioned device layer, wherein the aforementioned temperature compensation layer is in contact with and located between the aforementioned device layer and the aforementioned high acoustic impedance layer; and a The upper conductive layer is located above the aforementioned piezoelectric layer and the other side of the aforementioned piezoelectric layer is the aforementioned device layer; wherein the entire surface of the aforementioned device layer on the opposite side to the aforementioned piezoelectric layer is substantially used for the aforementioned resonator body It is installed on the carrier and separates the aforementioned resonator body. The bulk acoustic wave resonator as described in claim 1, wherein the single crystal of LiNbO ₃ has a cutting angle and a thickness. The bulk acoustic wave resonator as described in Claim 2, wherein the single crystal of LiNbO ₃ is formed at 130°±30°, 130°±20°, 130°±10°, 0°±30° or 0°±20° Angled cut. The bulk acoustic wave resonator as described in claim 2, wherein the aforementioned angle and the aforementioned thickness are favorable for a predetermined coupling efficiency of a mode 3 resonance and a mode 4 resonance. The bulk acoustic wave resonator as described in claim 4, wherein the single crystal of LiNbO ₃ is cut at an angle of 0°±10°. The bulk acoustic wave resonator as described in Claim 5, which includes a resonance frequency

The aforementioned mode 3 resonance or the aforementioned mode 4 resonance at 0.1 GHz. The bulk acoustic wave resonator as described in Claim 4, which includes at least one of the following: having a predetermined coupling efficiency

8% of the aforementioned mode 3 resonance; and has a predetermined coupling efficiency

3% of the aforementioned mode 4 resonances. The bulk acoustic wave resonator as described in Claim 7, wherein, in the aforementioned Mode 4 resonance, the single crystal thickness of the aforementioned _LiNbO3

0.5λ, wherein the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the thickness of the single crystal of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in Claim 7, wherein, in the aforementioned mode 3 resonance, the single crystal thickness of the aforementioned _LiNbO3

2λ, where the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the single crystal thickness of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in claim 1, further comprising between the aforementioned piezoelectric layer and the aforementioned device layer, the thickness

A lower conductive layer of 0.010λ, wherein the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the thickness of the single crystal of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in claim 1, wherein the aforementioned device layer thickness

50nm. The bulk acoustic wave resonator as described in Claim 1, further comprising a layer of low acoustic impedance material between the aforementioned piezoelectric layer and the aforementioned device layer, which has a pressure between 10 ⁶ Pa-s/m ³ and 30 x 10 ⁶ Pa Acoustic impedance and thickness between -s/m ³

0.05λ, wherein the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the thickness of the single crystal of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in Claim 1, wherein the aforementioned high-acoustic impedance layer located in at least one pair between the aforementioned piezoelectric layer and the aforementioned device layer has a pressure of 10 ⁶ Pa-s/m Acoustic impedance and thickness between ³ and 630 x 10 ⁶ Pa-s/m ³

0.05λ, wherein the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the thickness of the single crystal of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in Claim 1, wherein the aforementioned temperature compensation layer located in at least one pair between the aforementioned piezoelectric layer and the aforementioned device layer includes silicon and oxygen, and the thickness

2λ, where the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the single crystal thickness of the aforementioned LiNbO ₃ . The bulk acoustic wave resonator as described in claim 1 further includes a passivation layer. The bulk acoustic wave resonator as described in Claim 1, wherein the above-mentioned upper conductive layer includes at least one set of conductive shrapnel with spaces. The bulk acoustic wave resonator as described in Claim 1, wherein said at least one pair of said temperature compensation layer and said high acoustic impedance layer located between said piezoelectric layer and said device layer comprises a plurality of alternating temperature compensation layers and high-acoustic impedance layer. The bulk acoustic wave resonator as described in claim 1, wherein the aforementioned device layer contains at least one of the following: diamond; W; SiC; Ir, AlN, Al, Pt, Pd, Mo, Cr, Ti, Ta; periodic table Elements of group 3A or 4A; transition elements of group 1B, 2B, 3B, 4B, 5B, 6B, 7B or 8B of the periodic table; ceramics; glass and polymers.