WO2014090685A1 - Module semi-conducteur de puissance et dispositif de mise en contact électrique - Google Patents

Module semi-conducteur de puissance et dispositif de mise en contact électrique Download PDF

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Publication number
WO2014090685A1
WO2014090685A1 PCT/EP2013/075710 EP2013075710W WO2014090685A1 WO 2014090685 A1 WO2014090685 A1 WO 2014090685A1 EP 2013075710 W EP2013075710 W EP 2013075710W WO 2014090685 A1 WO2014090685 A1 WO 2014090685A1
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WO
WIPO (PCT)
Prior art keywords
connecting plate
contacts
power semiconductor
power
plane
Prior art date
Application number
PCT/EP2013/075710
Other languages
German (de)
English (en)
Inventor
Samuel Hartmann
Dominik Trüssel
Raffael Schnell
Original Assignee
Abb Technology Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Technology Ag filed Critical Abb Technology Ag
Publication of WO2014090685A1 publication Critical patent/WO2014090685A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to the field of power electronics. It relates to a power semiconductor module and a contacting arrangement according to the preamble of the independent claims.
  • bipolar transistors with insulated gate are frequently used in energy, forming and transmission technology.
  • IGBTs insulated gate
  • a large number of individual power transistors are electrically connected in parallel.
  • the power transistors are often combined in modules, which, among other things, enables simplified handling during installation and replacement, permits defined and optimized cooling, serves a number of safety aspects, etc.
  • component groups or submodules are often made up of subsets of the plurality formed at power transistors.
  • modules it is generally desired that they can switch on or off a current as quickly as possible.
  • a current can be switched between a first power electrode and a second power electrode by means of a control voltage applied between the first power electrode and a control electrode, this is made more difficult, inter alia, by inductive effects.
  • an applied between the first power electrode and the control electrode of an individual power transistor control target voltage which is for example generated by a control unit which is electrically connected via a control circuit to the power transistors, of a self-induction in a divided by the control circuit and power circuit portion of a Supply line to the first Superimposed on the power electrode, so that effectively results in a control voltage differing from the control target voltage between the first power electrode and the control electrode.
  • control unit to control electrode and from control unit to first power electrode of each power transistor - or at least for each submodule - are routed as closely together as possible over the greatest possible distances.
  • first power electrode of the power transistors of a separate reference lead - in the case of an IGBT generally referred to as an auxiliary emitter terminal - electrically contacted per sub-module, which means an additional expense manufacturing technology.
  • a supply line from control unit to control electrode is also referred to below as the control supply line.
  • Supply lines to the power electrodes preferably comprise molded connecting plates.
  • Such connecting plates are described for example in EP 1 868 243 A1 in the form of so-called load connection elements; in EP 0 776 042 A2 in the form of a so-called collector plate and a so-called emitter plate, and further in EP 0 680 147 A2 in the form of a so-called "collector electrode” and a so-called “emitter electrode”.
  • the control leads used in EP 0 776 042 A2, as in EP 0 680 147 A2 are in each case upwardly guided connecting wires;
  • the embodiments of EP 1 868 243 A1 relate, as far as can be seen, to a module exclusively with components without control electrodes, for example a rectifier bridge module.
  • a power semiconductor module comprises a number N of power semiconductor switching elements arranged parallel to a base plane, each of which has a number of switching element contacts, comprising a control contact, a first power contact and a second power contact, by means of a control contact between the first and the first power contact applied control voltage, a current between the power contacts is switchable; a contacting arrangement for contacting the switching element contacts, comprising: a first connecting plate, which is electrically conductively connected to the control contacts of the N power semiconductor switching elements, a second connecting plate, which is electrically conductively connected to the first power contacts of the N power semiconductor switching elements, a third Connecting plate which is electrically connected to the second power contacts at least a subset containing n ⁇ N of the N power semiconductor switching elements is connected; wherein each of the connection plates has a contact plane with contacts for contacting the switching element contacts, a connection plane with a main connection and a distribution plane formed between contact and connection plane for electrical connection of the contacts to the main connection, wherein the distribution plane of
  • the power semiconductor switching elements are preferably inside, the reference terminal and / or the main terminals, however, arranged outside a module housing. Furthermore, the reference terminal is preferably integrally formed on the second connecting plate.
  • An inventive contacting arrangement for a power semiconductor module comprising a number N of power semiconductor switching elements arranged parallel to a base plane, each of which has a number of switching element contacts comprising a control contact, a first power contact and a second power contact, wherein a control voltage applied between control contact and first power contact Current between the power contacts is switchable;
  • a first connecting plate which is electrically conductively connectable to the control contacts of the N power semiconductor switching elements
  • a second connecting plate which is electrically conductively connected to the first power contacts of the N examgurlei- ter switching elements
  • a third connecting plate which is electrically conductively connectable to second power contacts of at least a subset containing n ⁇ N of the N power semiconductor switching elements.
  • connection plates has a contact plane with contacts for contacting the switching element contacts, a connection plane with a main connection and a distribution plane formed between contact and connection plane for electrically connecting the contacts to the main connection, wherein the distribution plane of the first connection plate parallel to the distribution plane of the second Connecting plate and parallel to the distribution plane of the third connecting plate extends, and wherein the second connecting plate has a reference terminal, in particular for applying a control target voltage between the control contacts and the first power contacts of each power semiconductor switching element has.
  • connection plane and the distribution plane extend for each connecting plate, the connection plane and the distribution plane parallel to each other, and preferably parallel to the contact plane.
  • one or more of the three connecting plates are each made of a suitably shaped sheet metal blank, which is preferably produced by means of punching or laser cutting.
  • the connection, the connection and the contact plane are formed by bending the planar sheet metal blanks. Characterized positions of the contacts are spatially predetermined so that they are simultaneously electrically conductively connected to all of the respective connecting plate associated switching element contacts, preferably without further deformations and / or tensions occur.
  • one or more of the three connecting plates each comprise a plurality of shaped sheet metal blanks and / or other connecting elements, in particular contact pins or rails, with which they are electrically connected, in particular by means of a rivet, solder or welded joint.
  • FIG. 1 shows an illustration of a preferred exemplary embodiment of a power semiconductor module according to the invention.
  • FIG. 2 shows a first connecting plate of the power semiconductor module according to the invention from FIG. 1.
  • FIG. 3 shows a second connecting plate of the power semiconductor module from FIG. 1 according to the invention.
  • FIG. 4 shows a third connecting plate of the power semiconductor module according to the invention from FIG. 1.
  • FIG. 5 shows an electrical circuit diagram of the connection plates from FIG. 1.
  • FIG. 6 shows a side view of the power semiconductor module of FIG. 1.
  • FIG. 7 shows an illustration of the first and second connecting plate from FIG. 1.
  • FIG. 8 shows an equivalent circuit diagram of the contacting of the first group of submodules 2 from FIG. 1.
  • each submodule 2 in the present example comprises five IGBTs, which are electrically connected in parallel.
  • each IGBT comprises an emitter electrode 221 as a first power electrode, a collector electrode as a second power electrode, and a gate electrode 222 as a control electrode.
  • the five IGBTs of each submodule 2 are applied to a circuit board 21, which is, for example, a so-called “advanced metal brazing” substrate (A B substrate), which comprises a ceramic base on which a metallization is applied, wherein between the base and metallization a braze is provided.
  • a B substrate a so-called "advanced metal brazing” substrate
  • DCB substrate direct copper bonded substrates
  • the emitter electrodes 221 are connected to a first metallization region on the upper side of the board via which bonding wires are not shown in FIG. 1, on which a first power contact is formed
  • the gate electrodes 222 are electrically conductively connected via bonding wires (not shown in FIG. 1) to a second metallization region on the upper side of the circuit board 21, on which a control contact is further formed.
  • collector electrodes are located on a third metallization region on an upper side of the circuit board 21 and are connected to it in an electrically conductive manner and thus electrically connected in parallel.
  • a portion of the third metallization region serves as a second power contact.
  • the control contact and the first power contact of each board 21 or each submodule 2 - and with these the gate electrodes 222 and the emitter electrodes 221 - are connected via a contacting arrangement each with a first main terminal 31 1 and a second main terminal 321 of the power semiconductor.
  • module electrically connected.
  • the main terminals serve for external electrical contacting of the power semiconductor module and are, preferably as part of the contacting arrangement, in each case, preferably in one piece, formed on a connecting plate.
  • the contacting arrangement comprises a first connecting plate, which is also referred to below as the gate plate 31, a number N - corresponding to the number of sub-modules 2 - to first contacts 313, which are electrically connected to the control contacts of the sub-modules 2, as well a first main terminal as a gate terminal 31 1 has.
  • Fig. 2a shows a perspective view of the gate plate 31
  • Figure 2b shows the gate plate 31 of Figure 2a in plan view.
  • Fig. 2c shows a side view of the gate plate 31 of Fig. 2a.
  • the gate plate 31 forms a multiplicity of conduction paths between its gate 31 1 and the first contacts 313.
  • q 2 gate conduction paths 3141, 3142, corresponding to the number q submodules 2 per group 2b, which are shown in FIG. 2b by way of example for a first group of submodules 2-the two submodules 2 arranged one above the other in FIG. 1 on the left side.
  • FIG. 3a shows a perspective view of the second connecting plate, which is also referred to below as emitter plate 32.
  • 3b shows the emitter plate 32 of Figure 3a in plan view.
  • FIG. 3 c shows a side view of the emitter plate 32 from FIG. 3 a.
  • the emitter plate 32 also has an auxiliary emitter terminal 322 as a reference terminal. This is formed on an auxiliary emitter plate 32 ", which is electrically conductively attached to a main emitter plate 32 'by means of three rivet connections, but may also be integrally formed on the emitter plate 32.
  • the emitter plate 32 further comprises further second main terminals 321', which provide a secure contact allow the power semiconductor module and allow a more uniform distribution of current densities within the module and its supply lines.
  • q 2 auxiliary emitter line paths 3241, 3242 are formed in a manner similar to the gate line paths 3141, 3142 described in the previous section.
  • 3b shows the auxiliary emitter line paths 3241, 3242 by way of example for the same first group of submodules 2 as in FIG. 2b.
  • the contacting arrangement further comprises an arrangement of three Koliektorbleche 33, which are shown in Fig. 4a in a perspective view, as a third connecting plate.
  • 4b shows the Koliektorbleche 33 of Figure 4a in plan view.
  • FIG. 4c shows a side view of the Koliektorbleche 33 of FIG. 3a.
  • the power semiconductor module preferably comprises a module housing, not shown in FIG. 1, wherein an underside of the module housing is preferably formed by the base plate 1.
  • the module housing encloses, preferably liquid and / or gas-tight, an internal volume within which the sub-modules 2 are arranged.
  • the connecting plates are preferably guided through the module housing, in particular through a wall or wall of the module housing, so that only the main terminals and the auxiliary emitter terminal 322 and preferably the auxiliary collector terminal 332 come to lie on an outer side of the module housing, but the connecting plates otherwise are arranged in the inner volume.
  • each of the connecting plates in functional and geometric terms, three mutually parallel planes: A contact plane K with a plurality of contacts, a terminal level A with at least one main terminal, and an intermediate Contact and connection level formed distribution level V1, V2, and V3 for the electrical connection of the contacts with the main terminal.
  • a distance of the distribution levels V1, V2, and V3 is preferably chosen as small as possible, it being noted that a first distance a-
  • the first distance is preferably chosen to be slightly larger than a breakdown distance D which results for a nominal voltage of the power semiconductor module under standard conditions, eg atmospheric pressure at sea level, room temperature, preferably in the range 1.1 D ⁇ a ⁇
  • a second distance 82 between the distribution plane V2 of the emitter plate 32 and the distribution plane V1 of the gate plate 31 is preferably equal to or slightly smaller than a thickness d of the first or second connection plate, ie 0.5 ( ⁇ a 2 ⁇ IQ, where typically 0.1 mm ⁇ 82 ⁇ 1.5mm, preferably 0.8mm ⁇ 82 ⁇ 1.5mm.
  • the conduction paths 3141, 3142 extend from a first region B1 below the first main connection 31 1 to second regions B2 above the first contacts 313, as can be seen from FIG. 2b.
  • a first segment S1 of the line paths 3141, 3142 is formed by a common first gate plate section, which adjoins or encompasses the first main terminal 31 1.
  • Adjacent sheet metal sections can be composed of electrically interconnected, but originally separate part sheet blanks; However, can also be advantageously formed on a one-piece sheet metal blank.
  • auxiliary emitter line paths 3241, 3242 are formed in the distribution plane V2 of the emitter plate 32 in a manner similar to the gate line paths 3141, 3142 described in the previous section.
  • Fig. 6 shows a side view of the power semiconductor module of Fig. 1.
  • the distribution plane V1 of the gate plate 31 of the base plane S is located adjacent above the base plane S; the distribution plane V2 of the emitter plate 32 adjacent to the distribution plane V1 of the gate plate 31 on a side opposite to the base plane; and the distribution plane V3 of the collector plate 33 adjacent to the distribution plane V2 of the emitter plate 32.
  • FIG. 7 a shows a perspective view of gate plate 31 and emitter plate 32 in identical relative spatial position and position as in the power semiconductor module from FIG. 1.
  • Fig. 7b shows the two sheets of Fig. 7a in plan view, Fig. 7c from below, i. seen from the Bsisplatte 1 ago.
  • the second segments of the gate conduction paths 3141, 3142 extend in such a way that they are at least substantially completely covered by overlying first emitter sheet sections in the distribution plane V2 of the emitter plate, whereby a particularly effective shielding against inductive Coupling effects is achieved.
  • the first segment S1 of the gate conduction paths 3141, 3142 is also at least substantially completely covered in a first region R1 by overlying second emitter sheet sections in the distribution plane V2 of the emitter plate. In a second region R2, however, the first segment S1 of the line paths 3141, 3142 is not covered by any emitter plate sections in the distribution plane V2.
  • a coupling loop 4 is formed, which is located in the vicinity of a transition in the emitter plate 32 between its connection plane A and its distribution plane V2.
  • the term proximity is understood here and below to mean a distance d that is smaller than a length or width of the power semiconductor module, or a length or width bj of a submodule 2, where at least one selection of r from the set ⁇ /, b, y, öyj / j ⁇ , preferably rl 20 ⁇ d ⁇ r 15, most preferably r / 20 ⁇ d ⁇ r / 10.
  • Second and third coupling loops 4 'and 4 are formed in an analogous manner as described above for the middle and right group of submodules 2.
  • the coupling loops 4, 4' and 4" enclose surfaces of different sizes in order to obtain different amounts and Signs of mutual inductance, and thus in particular different amounts and signs of an inductive coupling of different groups of different groups of sub-modules 2 to be considered for each group.
  • FIG. 8 shows an equivalent circuit diagram of the contacting of the first group of partial circuits. Modules 2 of FIG. 1.
  • submodules can also be constructed differently than with 5 parallel IGBTs.
  • submodules with single or a different number of parallel-connected power transistors, in particular IGBTs are conceivable.
  • Submodules with one or more diodes connected in parallel or in series are also conceivable.
  • Submodules having a first number of parallel-connected power transistors and a second - different or equal - number of diodes connected in parallel in particular as protective diodes (English, “freewheeling", “snubber” or “flyback” diodes) can be used advantageously
  • power semi-conductor modules which are designed as or for use in bridge or half-bridge circuits, can also be replaced by other power semiconductor switching elements, both in the form of submodules and in general, instead of submodules mounted on a circuit board 21 suitably interconnected discrete and / or integrated power semiconductor elements including power semiconductor modules with different power semiconductor switching elements are conceivable.

Abstract

L'invention concerne un module semi-conducteur de puissance comprenant une pluralité de N éléments de circuit à semi-conducteur de puissance, disposés parallèlement à un plan de base, dont chacun présente une pluralité de contacts d'éléments de circuit, comprenant un contact de commande, un premier contact de puissance et un second contact de puissance, un courant étant commutable entre les contacts de puissance, au moyen d'une tension de commande appliquée entre le contact de commande et le premier contact de puissance; un dispositif de mise en contact, pour la mise en contact des contacts d'éléments de circuit, comprenant : une première tôle de liaison, qui est liée, de manière électriquement conductrice, avec les contacts de commande des N éléments de circuit à semi-conducteur de puissance, une deuxième tôle de liaison, qui est liée, de manière électriquement conductrice, avec les premiers contacts de puissance des N éléments de circuit à semi-conducteur de puissance, une troisième tôle de liaison, qui est liée, de manière électriquement conductrice, avec les deuxièmes contacts de puissance d'au moins une quantité partielle renfermant n <= N des N éléments de circuit à semi-conducteur de puissance; chacune des tôles de liaison présentant un plan de contact muni de contacts pour la mise en contact des contacts d'éléments de circuit, un plan de raccordement avec un raccordement principal, et un plan de répartition, formé entre le plan de contact et le plan de raccordement, pour la liaison électrique des contacts avec le raccordement, le plan de répartition de la première tôle de liaison, s'étendant parallèlement au plan de répartition de la deuxième tôle de liaison, et parallèlement au plan de répartition de la troisième tôle de liaison, la deuxième tôle de liaison présentant en outre un raccordement de référence, en particulier pour l'application d'une tension de consigne de commande, entre les contacts de commande et les premiers contacts de puissance d'un élément de circuit à semi-conducteur de puissance respectif.
PCT/EP2013/075710 2012-12-10 2013-12-05 Module semi-conducteur de puissance et dispositif de mise en contact électrique WO2014090685A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP12196304 2012-12-10
EP12196304.5 2012-12-10
EP2013058894 2013-04-29
EPPCT/EP2013/058894 2013-04-29

Publications (1)

Publication Number Publication Date
WO2014090685A1 true WO2014090685A1 (fr) 2014-06-19

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680147A2 (fr) 1994-04-28 1995-11-02 Mitsubishi Denki Kabushiki Kaisha Module de puissance et dispositif convertisseur de puissance à semi-conducteurs
EP0776042A2 (fr) 1995-11-24 1997-05-28 Asea Brown Boveri Ag Module semi-conducteur à haute puissance avec une pluralité de sous-modules
EP1868243A1 (fr) 2006-06-14 2007-12-19 Semikron Elektronik GmbH &amp; Co. KG Patentabteilung Module semi-conducteur de puissance doté d'éléments de connexion isolés électriquement les uns des autres

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680147A2 (fr) 1994-04-28 1995-11-02 Mitsubishi Denki Kabushiki Kaisha Module de puissance et dispositif convertisseur de puissance à semi-conducteurs
EP0776042A2 (fr) 1995-11-24 1997-05-28 Asea Brown Boveri Ag Module semi-conducteur à haute puissance avec une pluralité de sous-modules
EP1868243A1 (fr) 2006-06-14 2007-12-19 Semikron Elektronik GmbH &amp; Co. KG Patentabteilung Module semi-conducteur de puissance doté d'éléments de connexion isolés électriquement les uns des autres

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