WO2014088569A1 - Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage - Google Patents

Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage Download PDF

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Publication number
WO2014088569A1
WO2014088569A1 PCT/US2012/067931 US2012067931W WO2014088569A1 WO 2014088569 A1 WO2014088569 A1 WO 2014088569A1 US 2012067931 W US2012067931 W US 2012067931W WO 2014088569 A1 WO2014088569 A1 WO 2014088569A1
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WO
WIPO (PCT)
Prior art keywords
diamond
substrate
graphene
cutting element
volume
Prior art date
Application number
PCT/US2012/067931
Other languages
English (en)
Inventor
Abds-Sami Malik
Hui Zhang
Andrew Gledhill
Joel Vaughn
Original Assignee
Diamond Innovations, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diamond Innovations, Inc. filed Critical Diamond Innovations, Inc.
Priority to CN201280077539.6A priority Critical patent/CN104837546A/zh
Priority to EP12816548.7A priority patent/EP2928589A1/fr
Priority to PCT/US2012/067931 priority patent/WO2014088569A1/fr
Publication of WO2014088569A1 publication Critical patent/WO2014088569A1/fr

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Classifications

    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/56—Button-type inserts
    • E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/0615—Fullerene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering

Definitions

  • the present disclosure relates to providing a sintered polycrystalline diamond (PCD) that is free of Co, W, or other metals.
  • the PCD can be made entirely free of metals or can be free of metals on a top layer ranging in thickness from a few to several hundred microns.
  • the catalyst free layer is made without the use of acids, which are often dangerous and costly to use.
  • This catalyst free layer may be produced during the high pressure and high temperature (HPHT) sintering process that is used to make the PCD itself.
  • Benefits of this invention include providing a PCD that is thermally stable, that possesses improved abrasion resistance, and that may be produced more cheaply and safely than existing methods for providing catalyst free PCD.
  • PCD is formed by sintering diamond particles under high pressure and high temperature (HPHT) in the presence of a metal catalyst (such as cobalt, Co).
  • HPHT high pressure and high temperature
  • Typical HPHT conditions include pressures at or above about 45 kBar and temperatures at or above about 1400 Q C. Carbon from the diamond particles is dissolved by, and then re- precipitated as diamond, from the metal catalyst.
  • the presence of the metal catalyst facilitates formation of inter-particle diamond growth, which binds the diamond particles together as a sintered compact.
  • the metal catalyst remains in the PCD compact after the HPHT sintering process, and the presence of the metal catalyst is detrimental to PCD performance when the compact is used in cutting and machining applications.
  • the presence of the metal catalyst in the PCD compact may have detrimental effects on the PCD when used in intended applications.
  • a cutting element for a tool may comprise a substrate; a polycrystalline diamond table bonded to the substrate; and a diamond volume substantially free of catalytic material attached to the polycrystalline diamond table, wherein the polycrystalline diamond table is sandwiched between the substrate and the diamond volume substantially free of catalytic material.
  • a method of making a cutting element may comprise steps of positioning a diamond volume between a substrate and graphene; and sintering the graphene onto the diamond volume and the substrate. In the process of sintering, graphene is converted to diamond.
  • a method of making a cutting element may comprise steps of positioning a diamond volume onto a substrate; disposing a pill adjacent to the diamond volume distal from the substrate; sintering the pill to form a layer adhered to the diamond volume and secured to the substrate.
  • FIG. 1 depicts a perspective view of a polycrystalline diamond cutter (PDC) cutter according to an exemplary embodiment
  • FIG. 2 is a schematic cross-sectional view of a machined PDC cutter according to an exemplary embodiment
  • FIG. 3 is a cross-sectional view of a placement of the graphene pill, diamond powder, and tungsten carbide substrate in the tantalum cup according to an exemplary embodiment
  • FIG. 4 is a method of making a cutting element according to an exemplary embodiment
  • FIG. 5 is a cross-sectional view of the placement of the graphene pill and sintered diamond compact on a tungsten carbide substrate in the tantalum cup according to another exemplary embodiment
  • FIG. 6 is an SEM image and a corresponding EDS spectrum showing both carbon and cobalt are detected after high pressure high temperature sintering;
  • FIG. 7 is a Raman spectrum providing positive confirmation of diamond formation in the dark regions of a spot 1 and spot 2;
  • FIG. 8 is an SEM image showing the formation of diamond from graphene (dark regions) with lighter areas indicating the underlying PDC, with Co;
  • FIG. 9 is a magnified SEM image of FIG. 7 and corresponding an EDS spectrum showing that very little Co is detected in the dark regions; and [0020]
  • FIG. 10 is a plot of the wear volume of the finished PDC vs. the volume or rock removed. The cutter pressed with graphene showed improved wear resistance as compared to the standard cutter.
  • the term “about” means plus or minus 10% of the numerical value of the number with which it is being used. Therefore, about 50% means in the range of 45%-55%.
  • the term, “substantially free” is used referring to catalyst in interstices, interstitial matrix, or in a volume of polycrystalline element body, such as polycrystalline diamond, it should be understood that many, if not all, of the surfaces of the adjacent diamond crystals may still have a coating of the catalyst.
  • the term “substantially free” is used referring to catalyst on the surfaces of the diamond crystals, there may still be catalyst present in the adjacent interstices.
  • graphene refers to a form of graphitic carbon, in which the carbon atoms are arranged in a 2-dimensional hexagonal lattice, that can be as thin as one atomic layer ( ⁇ 1 nm). These layers can also exist as multiple stacked sheets.
  • the graphene particles have a very high aspect ratio such that, thickness (the z-axis) can be on the order of 100 nm (nanometers) whereas the 'x' and y dimensions can be on the order of 100 ⁇ (microns).
  • the oxygen content of the material may be between about 1 .0% to about 5.0%, in some embodiments about 1 .2% to about 2.0% and in some embodiments, about 1 .4%.
  • the sintered PDC cutters representing a polycrystalline diamond volume bonded to a tungsten carbide cobalt substrate (WC-Co), were fabricated using the first HPHT process. After fabrication all PDC cutters were shaped by grinding and polishing to the cylindrical shape with diameter 13 mm and height 8 mm. The thickness of polycrystalline diamond table was about 2 mm. Finally, a chamfer (0.5 mm, 45 Q ) was made on the top edge of polycrystalline diamond table of each cutter. After shaping completion, the cutter's surface was cleaned by sand blasting using SiC beads.
  • Raman spectroscopy was performed on a Horiba LabRAM HR instrument using 785 nm and 532 nm laser excitation with a 600 grating and an aperture size between 100 ⁇ and 1000 ⁇ . A 50x objective lens was used, and collection time was for 10 second each for 20 accumulations.
  • SEM Scanning electron microscopy
  • EDS elemental analysis
  • Exemplary embodiments disclose a cutting element for a tool and a method of making the cutting element.
  • a pill made from graphene, or fullerene may be loaded into a tantalum cup.
  • the fullerene may comprise Ceo, C 7 o, carbon nanotubes, for example.
  • Into this cup may be placed diamond powder or sintered diamond table and a tungsten carbide substrate.
  • This assembly may be loaded into a HPHT cell and pressed at up to 75 kBar and up to 1600 °C.
  • the recovered part has a layer of diamond, the top of which is free of cobalt or other metal catalysts.
  • FIG. 1 shows a schematic perspective view of a cylindrical shape PDC cutter 12 produced in a high pressure high temperature (HPHT) process with a catalytic material, such as cobalt, according to an exemplary embodiment.
  • the PDC cutter 12 may comprise a substrate 20, which is made of hard metal, alloy, or composite, such as cemented carbide or cobalt sintered tungsten carbide (WC-Co); and a polycrystalline diamond composite volume 21.
  • PDC cutter blank may be later machined to a desired shape and dimensions.
  • FIG. 2 shows a side view of a machined PDC cutter 12 according to an example embodiment.
  • the polycrystalline diamond composite 21 may further include a polycrystalline diamond table 34 bonded to the substrate 20 and a diamond volume 33 substantially free of catalytic material attached to the polycrystalline diamond table 34.
  • the polycrystalline diamond table 34 may be sandwiched between the substrate 20 and the diamond volume 33 substantially free of catalytic material.
  • the polycrystalline diamond table may be rich in catalyst, as it is left after the HPHT process, and attached or joined coherently to the substrate along the interface 22 between the substrate 20 and the diamond volume 33.
  • the catalytic material may be present as a sintering aid in manufacturing the polycrystalline diamond table 34. Very often, such catalyst, as cobalt metal or its alloys may be present as a diamond bond forming aid in HPHT manufacture of the polycrystalline diamond table 34.
  • the polycrystalline diamond volume 33 substantially free of catalytic material may be converted from graphene, fullerene under high pressure high temperature. Without intending to be bound to any particular theory, it may appear that under high pressure high temperature, p-electrons on carbon atoms of graphene or fullerene may attract every other carbon atom on graphene to cause the carbon to pucker, thus forming a diamond material as sp 3 carbon bond from sp 2 carbon bond graphene or fullerene.
  • the PDC cutter 12 may comprise a working surface 23 that includes a planar upper surface 24, and a side surface 26.
  • the PDC cutter 12 may further comprise a bevel 25 at a peripheral edge.
  • the shape of PDC cutter described here does not limit the scope of current disclosure and PDC cutters may have a variety of shapes.
  • the polycrystalline diamond table 34 may be a leached polycrystalline diamond table.
  • the polycrystalline diamond table 34 may be depleted in cobalt to a necessary one or several depths from, correspondently: an outer peripheral upper surface 24, chamfer 25, or an outer peripheral side surface 26.
  • the polycrystalline diamond table 34 rich in catalyst may extend along the side surface 26 but does not reach the interface 22 with the substrate 20; a working surface 23 that includes a planar upper surface 24 and a chamfer 25.
  • a catalyst substantially leached area may extend away from an upper surface 24 to a first predetermined depth, from a chamfer 25 to a second predetermined depth, and from a side surface 26 to a third predetermined depth.
  • each depletion depth may be from about 10 ⁇ to about 650 ⁇ , or it could be from about 2 ⁇ to about 60 ⁇ , for example.
  • a third depletion depth may constitute of at least half of the overall thickness of the polycrystalline diamond table 34, but stops short of the interface 22 by at least about 650 ⁇ , for example.
  • These PDC cutting elements 12 may be made in a conventional very high pressure and high temperature pressing (or sintering) operation, and then finished and machined into the cylindrical shapes shown.
  • One such process for making these PDC cutting elements 12 may involve combining mixtures of various sized diamond crystals into diamond powder layer 36 with a pill 38 which may include graphene, or fullerene, and diamond, and substrate 20 in a tantalum cup 31 as shown in FIG. 3.
  • a method 40 of making a cutting element may comprise steps of positioning a diamond volume between a substrate and graphene in a step 42; and converting the graphene to diamond bonded onto the diamond volume and the substrate in a step 44.
  • the step 42 may further include steps of positioning a diamond volume onto a substrate; disposing a pill, such as a graphene pill, adjacent to the diamond volume distal from the substrate.
  • the step 44 may further include a step of sintering the pill to form an adhesion layer, such as polycrystalline diamond, to diamond volume and secured to the substrate.
  • diamond volume may be a mixture of various sized diamond crystals as shown in FIG. 3.
  • diamond volume may be double pressed onto the substrate as shown in FIG. 5.
  • An alternate process for double pressing PDC cutting elements as described herein may involve an HPHT sintered PDC which includes diamond table 52 and the substrate 20.
  • Previously pressed PDC material may have substantially all metallic materials removed from its crystalline structure by, for example, acid leaching.
  • the graphene or fullerene, such as a graphene or fullerene pill 38, may then be layered (or otherwise dispersed) and assembled with a sintered PDC cutting element, as shown in FIG. 5, for HPHT sintering.
  • the diamond table 52 may be used without acid leaching and may be rich in catalytic material, such as cobalt.
  • the double press onto the substrate may include a first press at higher temperature than catalyst melting point, to affect standard polycrystalline diamond sintering, and a second press at temperature lower than catalyst melting point.
  • the catalyst such as cobalt, does not melt and graphene or fullerene may convert to polycrystalline diamond without the aid of catalyst.
  • Example 1 0.1 g of graphene was pressed into a 13 mm diameter pill which was placed in a Ta cup. Diamond powder (1 .1 g) was then put into the Ta cup and then capped with a tungsten carbide (WC) cylinder to seal the cup. This assembly was loaded into a high pressure cell and pressed at 75 kBar and 1300 -1600 °C for a few minutes, then brought back to atmospheric pressure and recovered from the high pressure cell. The Ta layer was removed by grinding. Raman analysis on the sintered materials revealed the presence of both diamond and graphite. There were no graphene peaks (about 1600 cm "1 & 2700 cm “1 ) being detected. In FIG. 6, SEM analysis showed the presence of Co within the sintered diamond layer.
  • WC tungsten carbide
  • Example 2 Ta cups were filled with loose graphene powder (0.1 to 0.22 g). Then, sintered PDC on a WC substrate, as shown in FIG. 5, was loaded into the cups. After drying these assemblies in vacuum at 105 °C for at least 72 hours, they were put into high pressure cells and pressed at 75 kBar and 1300 °C for a soak time of 10 minutes. Under optical microscopy, the sintered PDC exhibited dark regions, visually free of metal. Raman spectroscopy, FIG. 7 showed that these dark regions are diamond, which appear to have been formed from graphene.
  • Example 3 In a third embodiment, Ta cups were loaded with graphene pill of approximate weight 0.9 to 0.95 g. A sintered PDC on a WC substrate was loaded and the assembly dried. Pressing was done at 75 kBar and 1300 °C for soak time of 8 minutes. Visually, these samples appeared different from standard PDC in that they appeared to have 'wrinkles' and some cracks, and did not appear to have reflective metal regions on the surface when observed in the optical microscope. SEM images (FIG. 8) of the working surface shows dark and light regions. Under higher
  • FIG. 9 these are more distinct and energy dispersive analysis by X-rays (EDS) shows C, Co, and S.
  • the sulfur (S) presumably was originally present in the graphene.
  • the amount of Co is significantly lower than what would be observed in standard PDC. It appears that graphene has converted to diamond when it was in contact with a diamond grain. However, if graphene was in contact with metal (such as Co), it did not convert to diamond. This leads to the lighter and darker regions observed in SEM.
  • the samples were OD ground to 16 mm and chamfered (0.016") prior to testing their abrasion resistance.
  • Diamond PDC cutters were subjected to abrasion test, representing a standard vertical turret lather test using flushing water as a coolant (VTL-c).
  • VTL-c flushing water as a coolant
  • the PDC cutter was oriented at a 15 Q back rake angle against the surface of Barre Gray Granite rock wheel having a 1 .82 m diameter.
  • Such rock materials may comprise a compressive strength of about 200 MPa.
  • the tested cutter traveled on the surface of the granite wheel while the cutting element was held constant at a 0.36 cm depth of cut and the feed was 0.36 mm/revolution.
  • the wear curve compares the results for a standard PCD cutter 92 and one with graphene 94. As can be seen, the early wear behavior was similar, but as wear increased, some improvement in performance could be attributed the cutter with graphene derived diamond. As the amount of wear on the cutter increases, the thermal load increases significantly. This improvement in late-stage wear correlates to an improvement in thermal stability of the cutter.
  • Example 4 The similar experiments as example 3 were done except that PDC cutters were chemically etched in acid solutions and then boiled in deionized water to clean from etching deposits. Different etching times provided PDC cutters with different Co depletion depths from the surface, such as from 10 to 200 ⁇ deep. Co depletion depth was measured by SEM on sample cross-sections obtained after completion and subsequent abrasion tests. Several etched cutters were further used for diamond coating and others were used as the references in abrasion tests.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Geology (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Earth Drilling (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un compact de diamant polycristallin comprenant la disposition d'une couche de graphène sur la partie supérieure d'un PCD fritté et la transformation du graphène à pression élevée et température élevée en diamant qui est exempt de catalyseur métallique. L'invention concerne un procédé de fabrication de PCD par disposition d'une couche de poudre de graphène (38) sur la partie supérieure d'une couche de poudre de diamant (36) et d'un substrat (20) et frittage à pression élevée et température élevée pour transformer le graphène en diamant qui est exempt de catalyseur métallique à la surface. L'invention concerne un élément de coupe pour un outil comprenant un substrat, une table de PCD et un volume de diamant qui est sensiblement exempt de matière catalytique. Le PCD se situe entre le substrat et le volume de diamant.
PCT/US2012/067931 2012-12-05 2012-12-05 Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage WO2014088569A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280077539.6A CN104837546A (zh) 2012-12-05 2012-12-05 在钻削刀具上提供无催化剂的金刚石层
EP12816548.7A EP2928589A1 (fr) 2012-12-05 2012-12-05 Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage
PCT/US2012/067931 WO2014088569A1 (fr) 2012-12-05 2012-12-05 Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2012/067931 WO2014088569A1 (fr) 2012-12-05 2012-12-05 Disposition d'une couche de diamant exempte de catalyseur sur des organes coupants de forage

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WO2014088569A1 true WO2014088569A1 (fr) 2014-06-12

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WO (1) WO2014088569A1 (fr)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2018122321A1 (fr) * 2016-12-31 2018-07-05 Element Six (Uk) Limited Procédé de fabrication d'une construction super-dure polycristalline
US11702741B2 (en) 2021-12-13 2023-07-18 Saudi Arabian Oil Company Producing polycrystalline diamond compact cutters with coatings
US11866372B2 (en) 2020-05-28 2024-01-09 Saudi Arabian Oil Company Bn) drilling tools made of wurtzite boron nitride (W-BN)
US12024470B2 (en) 2021-02-08 2024-07-02 Saudi Arabian Oil Company Fabrication of downhole drilling tools

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EP3430228B1 (fr) * 2016-03-16 2022-10-26 Diamond Innovations, Inc. Corps de diamant polycristallin ayant des régions annulaires ayant différentes caractéristiques

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US7842111B1 (en) * 2008-04-29 2010-11-30 Us Synthetic Corporation Polycrystalline diamond compacts, methods of fabricating same, and applications using same
US20110083908A1 (en) * 2009-10-12 2011-04-14 Smith International, Inc. Diamond Bonded Construction Comprising Multi-Sintered Polycrystalline Diamond
US20110252712A1 (en) * 2010-04-14 2011-10-20 Soma Chakraborty Method of making a diamond particle suspension and method of making a polycrystalline diamond article therefrom

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US6068913A (en) * 1997-09-18 2000-05-30 Sid Co., Ltd. Supported PCD/PCBN tool with arched intermediate layer
GB2455425A (en) * 2005-05-26 2009-06-10 Smith International Methods for making polycrystalline diamond materials
US7842111B1 (en) * 2008-04-29 2010-11-30 Us Synthetic Corporation Polycrystalline diamond compacts, methods of fabricating same, and applications using same
US20110083908A1 (en) * 2009-10-12 2011-04-14 Smith International, Inc. Diamond Bonded Construction Comprising Multi-Sintered Polycrystalline Diamond
US20110252712A1 (en) * 2010-04-14 2011-10-20 Soma Chakraborty Method of making a diamond particle suspension and method of making a polycrystalline diamond article therefrom

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018122321A1 (fr) * 2016-12-31 2018-07-05 Element Six (Uk) Limited Procédé de fabrication d'une construction super-dure polycristalline
GB2559486A (en) * 2016-12-31 2018-08-08 Element Six Uk Ltd A method of making a polycrystalline super hard constructions
GB2559486B (en) * 2016-12-31 2020-06-17 Element Six Uk Ltd A method of making a polycrystalline super hard constructions
US11866372B2 (en) 2020-05-28 2024-01-09 Saudi Arabian Oil Company Bn) drilling tools made of wurtzite boron nitride (W-BN)
US12024470B2 (en) 2021-02-08 2024-07-02 Saudi Arabian Oil Company Fabrication of downhole drilling tools
US11702741B2 (en) 2021-12-13 2023-07-18 Saudi Arabian Oil Company Producing polycrystalline diamond compact cutters with coatings

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EP2928589A1 (fr) 2015-10-14

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