WO2014073829A1 - 태양전지용 그리드 전극, 그리드 전극 형성 방법 및 형성 장치 - Google Patents

태양전지용 그리드 전극, 그리드 전극 형성 방법 및 형성 장치 Download PDF

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Publication number
WO2014073829A1
WO2014073829A1 PCT/KR2013/009923 KR2013009923W WO2014073829A1 WO 2014073829 A1 WO2014073829 A1 WO 2014073829A1 KR 2013009923 W KR2013009923 W KR 2013009923W WO 2014073829 A1 WO2014073829 A1 WO 2014073829A1
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WIPO (PCT)
Prior art keywords
grid electrode
electrode
aerosol
slit
forming
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PCT/KR2013/009923
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English (en)
French (fr)
Inventor
윤석구
윤경훈
박정재
김도연
이종건
곽지혜
윤재호
안세진
조아라
신기식
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Korea Institute of Energy Research KIER
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Korea Institute of Energy Research KIER
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Publication of WO2014073829A1 publication Critical patent/WO2014073829A1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
    • B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
    • B05B12/29—Masking elements, i.e. elements defining uncoated areas on an object to be coated with adjustable size
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Grid electrode for solar cell grid electrode forming method and forming apparatus
  • the present invention relates to a grid electrode for a solar cell and a method of forming the same, and more particularly, to a grid electrode having a lower electrode resistance and a narrower width, and a method of forming the same.
  • Sado solar cell is a device that converts solar energy directly into electrical energy. Infinite and semi-permanent
  • These solar cells absorb electricity to produce electricity by absorbing light.
  • the solar cells form metal electrodes on both sides of the light absorbing layer to transfer electricity generated from the light absorbing layer to the outside.
  • the rear electrode positioned opposite to the light absorbing layer is not a problem even if the metal is formed throughout the solar cell, but the front electrode made of the metal material positioned in the direction of the light incident to the light absorbing layer has no problem. Because it cannot penetrate
  • these metal grid electrodes are formed in a complex structure on the surface of a solar cell, they are generally formed by screen printing.
  • the (air mass) of the spectral distribution AM unit refers to the amount of air contained in the atmosphere round the solar energy passes through Specifically, there is no air passing through solar energy outside the atmosphere, so it is AMO, and sunlight enters vertically, and AMI, and AM1.5 passes through 1.5 of the paths where sunlight enters vertically. 41.8 degrees. This reference state reflects the fact that sunlight does not enter the solar cell vertically.
  • the screen printing process itself is not a complicated technology, and thus the process cost is considered low, but since the material used for the screen printing paste is an expensive material such as silver, the overall cost of forming the grid electrode is higher. D-.
  • the present invention is intended to solve the problems of the prior art described above.
  • the objective is to provide grid electrodes for solar cells and aspect forming methods with aspect ratios and large cross-sectional areas, minimizing shadowing problems.
  • a method of forming a grid electrode used as a front electrode of a solar cell comprising: preparing a powder of an electrode material metal; spraying an aerosol including the metal powder into a slit formed in a mask, wherein the sprayed aerosol
  • the vortex formed in the slit is characterized by forming an electrode in which the metal powder contained in the aerosol has a triangular cross section.
  • the inventors of the present invention have developed and filed an application for manufacturing an inorganic thin film solar cell using a supersonic nozzle that generates supersonic flow of aerosol (Korean Patent Application Publication No. 10-2012-00913939).
  • the inventors of the present invention when spraying a supersonic flow aerosol into a narrow slit, by the vortex formed in the slit It was found that the powder contained in the aerosol forms a triangular cross section and deposited, and applied to the grid electrode for solar cells, thereby discovering a method for forming a grid electrode having a larger surface area at the same width.
  • the height of the slit is greater than the width of the aerosol to generate vortices in the slit to form an electrode having a triangular cross-section. It can be a convergence / diverge nozzle.
  • a grid electrode for a solar cell according to another aspect of the present invention is described in the above manner.
  • the grid electrode for solar cells of the present invention uses a material such as copper.
  • the cross section is triangular, and the grid electrode has an aspect ratio (thickness / width).
  • a grid electrode forming apparatus is an apparatus used for forming the grid electrode, and includes: a powder supply section for supplying a metal powder as an electrode material; and mixed with the metal powder to form an aerosol.
  • a gas supply unit supplying a gas to be formed; a nozzle for discharging the aerosol; and a masking device installed in close contact with the light absorbing layer of the solar cell, wherein the aerosol discharged from the nozzle is sprayed to the light; It is characterized by the formation of a slit to be deposited on the absorber layer.
  • the masking device may further include an adjusting means for adjusting the width of the slit, and specifically, a fixed body fixed in position, a fixed body spaced parallel to the fixed body to form a slit, and the movable body and the movable body are moved. It may be configured to include a control unit for adjusting the position of the slit, characterized in that the width of the slit changes depending on the position of the moving body.
  • the present invention constructed as described above has a thick aspect ratio of 0.3 or more.
  • the present invention not only makes it possible to use inexpensive copper in forming the grid electrode, but also requires no separate process or equipment for sintering the copper powder, so the process of forming the grid electrode is simple and costly. This has an inexpensive effect.
  • FIG. 1 shows the structure of a masking apparatus used in the manufacturing process of this embodiment.
  • FIG 2 shows the structure of the masking apparatus used in the manufacturing process of the present embodiment.
  • FIG. 3 is a photograph showing a grid electrode formed by using the masking apparatus used in this embodiment.
  • FIG. 4 is a scanning electron microscope photograph of a cross section of a grid electrode formed according to the present embodiment.
  • FIG. 5 is a schematic diagram showing the principle of forming a triangular cross section of the gradation electrode of the present embodiment.
  • FIG. 6 is a scanning electron micrograph of a cross section of a grid electrode having a width of 150 / zm formed according to the present embodiment.
  • FIG. 7 is a scanning electron micrograph of a cross section of a 300-grid grid electrode formed according to the present embodiment.
  • FIG. 8 is a schematic diagram showing the influence of shadows generated by the front electrode.
  • the method for forming a grid electrode for a solar cell of the present embodiment first prepares a copper powder having an overwhelming degree of micrometer. Since this embodiment does not apply metal in a paste state, it is better than silver used for paste. Relatively inexpensive copper can be used.
  • a grid electrode is formed using a supersonic aerosol injector, which discharges the aerosol mixed with the prepared copper powder and the high-pressure compressed gas at a supersonic speed through a nozzle.
  • the transport gas used in the supersonic aerosol injector may use gas such as air, hydrogen or nitrogen, and the temperature of the transport gas may be controlled at room temperature.
  • the particle supply flow rate can be adjusted in the range of l ⁇ 20L / min.
  • the supersonic nozzle of the supersonic aerosol injector utilizes a converge / diverge nozzle so that the ejected aerosol forms a supersonic flow.
  • These convergence / diffusion nozzles are used in supersonic jets, etc., which accelerate the compressed gas in the convergence section and apply the appropriate pressure in the diffusion section.
  • the acceleration continues and the aerosol is discharged in supersonic flow. As a result, it is contained in the aerosol discharged through the supersonic nozzle.
  • the copper powder is accelerated at a speed of 200-500 m / sec.
  • Supersonic nozzles can be made of materials such as steel, stainless steel, or tungsten carbide, especially when the supersonic nozzles are made of tungsten carbide, providing excellent wear and heat resistance of the material itself, as well as heated transfer gases and atmospheres. By minimizing heat transfer to the same outside, the speed of aerosols by supersonic flow can be maximized.
  • the copper powder is discharged at high speed to form a grid electrode.
  • a masking device was used to adjust the width of the slit with a thickness of 3,000.
  • FIG. 1 is a perspective view showing the structure of a masking apparatus used in the manufacturing process of the present embodiment
  • FIG. 2 is a bottom view of the masking apparatus.
  • the masking apparatus used in this embodiment includes a stationary body 100 and a movable body 200;
  • the stationary body 100 is not fixed to the installed position and does not move, and a space Slit (S) spaced in parallel with the moving body 200 is moved.
  • a rectangular opening is formed in the fixing body 100, and in this opening,
  • the movable body 200 was positioned and used as a space ollit slit S formed between one side of the opening of the stationary body 100 and the movable body 200.
  • the aerosol containing copper particles ejected from the supersonic nozzle in the slit S thus formed. Is spun at high speed to form a grid electrode composed of copper particles.
  • Adjusting unit 300 to adjust the position of the moving body 200 to adjust the width of the slit (S)
  • the rod 310 is connected to the moving body 200 while moving to adjust the width of the slit (S).
  • the masking device thus configured has the width of the slit (S) in the range of 50 to 20000 depending on the width required for the grid electrodes such as finger bars and bus bars.
  • electrodes of various widths can be formed.
  • FIG. 3 is a photograph showing a grid electrode formed by using the masking apparatus used in this embodiment.
  • Grid electrodes of various widths could be formed in the range.
  • a masking device in which the width of the slit is set on the silicon substrate is provided.
  • a plurality of aerosols containing copper powder in the slits were sprayed at high speed through a supersonic aerosol injector, thereby forming a grid electrode on the silicon substrate.
  • FIG. 4 is a scanning electron microscope photograph of a cross section of the grid electrode formed according to the present embodiment.
  • the grid electrode formed according to this embodiment has a triangular cross-section.
  • the enlarged photograph shows that the lower part is firmly adhered to the silicon substrate by the discharge pressure. It can be seen that on both the right side and the right side, the copper powder forms a stable structure combined with the surrounding copper powder to maintain the cross section of the triangle.
  • the grid electrode formed according to the present embodiment is conventional in two aspects. It has unexpected effects.
  • a grid electrode with a triangular cross-sectional structure was formed without using it.
  • FIG. 5 is a schematic diagram showing circular motion in which the grid electrode of this embodiment forms a triangular cross section.
  • At least the height of the slit must be larger than the width. If the height of the slit is smaller than the width, no vortex is formed inside the slit, and a grid electrode having a triangular cross section cannot be formed.
  • the size of the copper powder, X is the distance between the nozzle and the substrate, is the density of copper powder, and / 3 ⁇ 4 is the working fluid pressure.
  • the velocity ⁇ y p ) when the copper powder contained in the aerosol discharged through the supersonic nozzle reaches the substrate is about 347 m / s.
  • FIG. 6 is a scanning electron micrograph of a cross section of a grid electrode having a width of 150 formed according to the present embodiment. (a) is one time, (b) three times, (c) five times, and (d) seven aerosol injections.
  • the grid is limited by the slit of the masking device.
  • the bottom width of the electrode is constant, but as the number of aerosol injections increases, the thickness of the electrode becomes thicker.
  • the measured aspect ratio (thickness / width) is (a) of 0.3,
  • the grid electrode according to the present embodiment may be used regardless of the number of aerosol sprays.
  • FIG. 7 is a scanning electron micrograph of a cross section of a 300-grid grid electrode formed according to the present embodiment. (a) is one time, (b) is three times, (c) is five times, and (d) is seven aerosol injections.
  • the grid electrode formed according to the present embodiment has a triangular cross-sectional shape while having an aspect ratio of 0.3 or more, so that the resistance of the electrode due to the expansion of the cross-sectional area is reduced, and the efficiency of the grid electrode is reduced. The degradation can be minimized.
  • the melting point of copper is 1084.62 ° C and, according to this embodiment, the silver range of the aerosol injected through the supersonic nozzle ranges from RT to 500 o C.
  • copper contained in the aerosol that is compressed at high pressure and discharged at high speed. The powder is melted on the surface, and the copper powders are stably bonded to each other as the copper powder is added at high speed in forming the grid electrode.
  • a separate powder for sintering the copper powder is used. No process or equipment is required.

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  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

본 발명은 태양전지용 그리드 전극을 형성하는 방법에 관한 것으로서, 태양전지의 전면전극으로 사용되는 그리드 전극을 형성하는 방법으로서, 전극재료 금속의 분말을 준비하는 단계; 상기 금속 분말을 포함하는 에어로졸을 마스크에 형성된 슬릿에 분사하는 단계를 포함하며, 상기 분사된 에어로졸이 상기 슬릿 내에 형성하는 와류에 의해서 상기 에어로졸에 포함한 금속 분말이 삼각형의 횡단면을 가지는 전극을 형성하는 것을 특징으로 한다. 본 발명은, 종횡비가 0.3이상으로 두꺼우면서도 삼각형의 단면 형상을 갖기 때문에, 단면적의 확장에 따른 전극의 저항은 낮추면서 그리드 전극의 그림자에 의한 효율의 저하를 최소화 할 수 있는 효과가 있다. 또한, 본 발명은 그리드 전극의 형성과정에서 저렴한 구리를 사용할 수 있을 뿐만 아니라, 구리분말을 소결하기 위한 별도의 공정이나 장비를 필요로 하지 않으므로, 그리드 전극을 형성하는 공정이 간단하고 비용이 저렴한 효과가 있다.

Description

명세서
발명의명칭:태양전지용그리드전극，그리드전극형성방법및 형성장치
기술분야
[1] 본발명은태양전지용그리드전극및그형성방법에관한것으로서，더욱 자세하게는전극저항을낮추고폭을좁힌그리드전극및그형성방법에관한 것이다.
배경기술
[2] 최근심각한환경오염문제와화석에너지고갈로차세대청정에너지개발에 대한증요성이증대되고있다.그증에사도태양전지는태양에너지를직접전기 에너지로전환시키는장치로서,공해가적고,자원이무한적이며반영구적인
■ 수명을가지고있어미래에너지문제를해결할수있는에너지원으로기대되고 있다.
[3] 이러한태양전지는다양한종류로구성되는광흡수층이빛을흡수하여전기를 생산하며,광흡수층의양쪽에금속재질의전극을형성하여광흡수층에서 생산된전기를외부로전달한다ᅳ
[4] 이때,광흡수층으로빛이입사하는반대쪽에위치하는후면전극은금속을 태양전지전체에걸쳐형성하여도문제가없지만，광흡수층으로빛이입사되는 방향에위치하는금속재질의전면전극은빛이투과할수없기때문에
그물형태의그리드전극을형성하는것일일반적이다.최근,전기가통하는 투명한박막인 ITO등을전면전극에적용하려는시도가있으나,효율이나쁘기 때문에금속그리드전극이일반적으로사용되고있다.
[5] 이러한금속그리드전극은태양전지의표면에복잡한구조로형성되기때문에 스크린프린팅방법으로형성되는것이일반적이다.
[6] 한편，태양전지에서발생하는여러가지전기적인손실은태양전지의효율을 떨어뜨리며，전극자체가가지는저항에의한전극저항손실은그중에 하나이다.이러한전극저항손실을줄이기위해서는전극의단면적으로넓혀서 전극의직렬저항을낮춰야한다.
[7] 그러나현재일반적인스크린프린팅방법으로제조된그리드전극은페이스트 상태로인쇄하기때문에전극의두께를높이기어렵디-.따라서스크린프린팅 방법에서단면적을넓히기위해서는전극의선폭을크게할수밖에없으며， 그리드전극의선폭이커지면빛이 입사되는면적이줄기때문에태양전지의 효율이감소한다.
[8] 반대로,태양전지의선폭을줄이고두께를높게하여，종횡비가높은그리드 전극을형성하는경우에는 :전극의그림자에따른효율저하가문제된다.
[9] 도 8은전면전극에의해서생기는그림자의영향을나타내는모식도이다. [10] 태양전지의효율을객관적으로평가하기위해서는동일한조건에서효율을 측정하여야하며，현재태양전지의효율을측정하는기준상태는온도가
25°C이고방사조도가 1000W/m2이며，분광분포가 AM1.5인경우이디-.이때， 분광분포의단위인 AM(air mass)은태양에너지가통과하는대기권둥에포함된 공기량을말한다.구체적으로대기권외에서는태양에너지가통과하는공기가 없으므로 AMO이고，태양광이수직하게입사되는경우가 AMI이며, AM1.5는 태양광이수직하게입사되는경로의 1.5를통과한경우로입사각이약 41.8도인 경우이다.이러한기준상태는태양빛이태양전지에수직하게입사되지않는 점을반영한것이다.
[11] 따라서도시된것과같이전면전극의선폭을줄이고높이를높이는경우에는 비스듬히입사되는태양빛에의해서그림자 (P)가발생하며，이는광흡수층에 입사되는빛이줄어드는것을의미한다.
[12] 이러한문제를해결하기위하여폭이점점좁아지는전극인쇄층올순차적으로 형성하는기술이개발되었다. (대한민국등록특허 10-1089018)그러나
페이스트를이용한스크린프린팅공정을전제로개발된기술이기때문에， 충분한종횡비와단면적을얻을수없는단점이있다.또한,스크린프린팅 공정을 3회에걸쳐수행하기때문에공정시간이너무길어지는단점이다.
[13] 나아가,스크린프린팅공정자체는복잡한기술이아니어서공정비용이낮은 것으로여겨지나，스크린프린팅에사용되는페이스트에들어가는물질은은과 같은고가의재료이기때문에，전체적인그리드전극형성비용은높은편이디-.
[14] [선행기술문헌]대한민국등록특허 10-1089018
발명의상세한설명
기술적과제
[15] 본발명은전술한종래기술의문제점을해결하기위한것으로서높은
종횡비와넓은단면적을가지면서그림자에따른문제를최소화한태양전지용 그리드전극및그형성방법을제공하는데그목적이있다.
과제해결수단
[16] 상기목적을달성하기위한본발명에의한그리드전극형성방법은，
태양전지의 전면전극으로사용되는그리드전극을형성하는방법으로서, 전극재료금속의분말을준비하는단계;상기금속분말을포함하는에어로졸을 마스크에형성된슬릿에분사하는단계를포함하며,상기분사된에어로졸이 상기슬릿내에형성하는와류에의해서상기에어로졸에포함한금속분말이 삼각형의횡단면올가지는전극을형성하는것을특징으로한다.
[17] 본발명의발명자들은에어로졸의초음속유동을발생시키는초음속노즐을 이용하여,무기물박막태양전지를제조하는장치를개발하여출원 (대한민국 공개특허제 10-2012-00913939호)한바가있다.본발명의발명자들은초음속 유동하는에어로졸을좁은슬릿에분사하면,슬릿내에형성되는와류에의해서, 에어로졸에포함된분말이삼각형의단면을형성하며증착되는점을확인하고， 이를태양전지용그리드전극에적용함으로써동일한폭에서표면적이더 넓어진그리드전극을형성하는방법을발명하였다.
[18] 에어로졸이슬릿내에서와류를발생시켜삼각형의횡단면을가지는전극을 형성하기위해서는,술릿의높이가폭보다큰것이바람직하다.에어로졸을 고속으로분사하기위해서에어로졸을분사하는에어로졸분사기의노즐은 수렴 /확산 (converge/diverge)노즐일수있다.
[19] 본발명의다른형태에의한태양전지용그리드전극은상기한방법으로
제조된것을특징으로한다.
[20] 또한본발명의태양전지용그리드전극은구리와같은재질을이용하여
횡단면이삼각형인것을특징으로하며그리드전극은종횡비 (두께 /폭)가
0.3이싱인것이바람직하다.
[21] 본발명의또다른형태에의한그리드전극형성장치는,상기한그리드전극올 형성하는방법애사용되는장치로서，전극재료인금속분말을공급하는분말 공급부；상기금속분말과혼합되어에어로졸을형성하는가스를공급하는가스 공급부；상기에어로졸을토출하는노즐;및태양전지의광흡수층에밀착하여 설치되는마스킹장치를포함하여구성되며，상기마스킹장치에는상기 노즐에서토출된에어로졸이분사되어상기광흡수층에증착되는슬릿이 형성된것을특징으로한다.
[22] 이때,마스킹장치는상기슬릿의폭을조절하는조절수단을더포함하는것이 좋으며,구체적으로위치가고정된고정체,고정체와평행하게이격되어슬릿을 형성하며위치가움직이는이동체및이동체의위치를조절하는조절부를 포함하여구성되며,이동체의위치에따라서슬릿의폭이변하는것을특징으로 하는구성일수있다.
발명의효과
[23] 상술한바와같이구성된본발명은，종횡비가 0.3이상으로두꺼우면서도
삼각형의단면형상을갖기때문에,단면적의확장에따른전극의저항은 낮추면서그리드전극의그림자에의한효율의저하를최소화할수있는효과가 있다.
[24] 또한,본발명은그리드전극의형성과정에서저렴한구리를사용할수있을 뿐만아니라，구리분말을소결하기위한별도의공정이나장비를필요로하지 않으므로,그리드전극을형성하는공정이간단하고비용이저렴한효과가있다. 도면의간단한설명
[25] 도 1은본실시예의제조과정에서사용된마스킹장치의구조를나타내는
사시도이다.
[26] 도 2는본실시예의제조과정에서사용된마스킹장치의구조를나타내는
저면도이다. [27] 도 3은본실시예에서사용된마스킹장치를이용하여형성된그리드전극을 나타내는사진이다.
[28] 도 4는본실시예에따라형성된그리드전극의단면을촬영한주사전자현미경 사진이다.
[29] 도 5는본실시예의그라드전극이삼각형의단면을형성하는원리를나타낸 모식도이다.
[30] 도 6은본실시예에따라서형성된폭이 150/zm인그리드전극의단면을촬영한 주사전자현미경사진이다.
[31] 도 7은본실시예에따라서형성된폭이 300 인그리드전극의단면을촬영한 주사전자현미경사진이다.
[32] 도 8은전면전극에의해서생기는그림자의영향을나타내는모식도이다.
[33] [부호의설명]
[34] 100:고정체 200:이동체 300:조절부
[35]
발명의실시를위한형태
[36] 첨부된도면을참조하여본발명에따른실시예를상세히설명한다.
[37] 본실시예의태양전지용그리드전극의형성방법은，먼저수마이크로미터의 압도를갖는구리분말을준비한다.본실시예는금속을페이스트상태로 도포하는것이아니므로，페이스트에사용되는은보다상대적으로저가인 구리를사용할수있다.
[38] 준비된구리분말과고압으로압축된이송가스가흔합된에어로졸을노즐을 통하여초음속으로토출하는초음속에어로졸분사기를이용하여그리드 전극을형성한다.
[39] 초음속에어로졸분사기에사용되는이송가스는공기나수소또는질소등의 가스를사용할수있고，이송가스의온도는실온 (room temperature)에서
500°C까지의범위에서적용할수있으며,입자공급유량은 l~20L/min의 범위에서조절할수있다.
[40] 또한,초음속에어로졸분사기의초음속노즐은분출되는에어로졸이초음속 유동을형성하도록수렴 /확산 (converge/diverge)형상구조의노즐을이용한다. 이러한수렴 /확산노즐은초음속제트기등에서사용되는구조로서，수렴 구간에서압축가스를가속시키고확산구간에서적정한압력을
유지시켜줌으로써가속이계속진행되어에어로졸이초음속유동을이루며 토출된디-.그결과,초음속노즐을통해토출된에어로졸속에포함된
구리분말은 200~500m/sec의속도로가속된다.
[41] 초음속노즐은스틸이나스테인리스스틸또는텅스텐카바이드등의재질로 제작할수있다.특히초음속노즐을텅스텐카바이드로제작하는경우에재질 자체의내마모성과내열성이우수할뿐만아니라가열된이송가스와대기와 같은외부와의열전달을최소화시킴으로써초음속유동에의한에어로졸의 속도를극대화시킬수있다.
[42] 본실시예에서구리분말을고속으로토출하여그리드전극을형성하는
과정에서, 3,000 의두께를갖는슬릿의폭을조절할수있는마스킹장치를 사용하였다.
[43] 도 1은본실시예의제조과정에서사용된마스킹장치의구조를나타내는 사시도이고，도 2는마스킹장치의저면도이다.
[44] 본실시예에서사용된마스킹장치는고정체 (100)와이동체 (200)및
조절부 (300)로구성된다.
[45] 고정체 (100)는설치된위치에고정되어움직이지않으며 ,위치가움직이는 이동체 (200)와의사이에평행하게이격된공간인슬릿 (S)이형성된다.
[46] 본실시예는고정체 (100)에사각형의개구부를형성하고，이개구부내에
이동체 (200)를위치시켜,고정체 (100)의개구부일면과이동체 (200)의사이에 만들어진공간올슬릿 (S)으로이용하였다.이렇게형성된슬릿 (S)에초음속 노즐로부터토출된구리입자포함에어로졸을고속으로분출하여，구리입자로 구성된그리드전극을형성한다.
[47] 조절부 (300)는이동체 (200)의위치를조절하여슬릿 (S)의폭을조절하는
부분으로서,조절부 (300)의마이크로미터를작동하면이동체 (200)와연결된 막대 (310)가움직이면서슬릿 (S)의폭을조절한다.
[48] 이렇게구성된마스킹장치는핑거바 (finger bar)와버스바 (bus bar)등그리드 전극에요구되는폭에따라서슬릿 (S)의폭을 50~20000 범위에서
조절함으로써다양한폭의전극을형성할수있다.
[49] 도 3은본실시예에서사용된마스킹장치를이용하여형성된그리드전극을 나타내는사진이다.
[50] 도시된것과길 -이，본실시예의마스킹장치를사용하여 150~1500zm의
범위에서다양한폭의그리드전극을형성할수있었다.
[51] 본실시예에서는실리콘기판위에슬릿의폭이설정된마스킹장치를
위치시키고,초음속에어로졸분사기를통해서슬릿에구리분말을포함한 에어로졸을고속으로여러차례분사하여,실리콘기판에그리드전극을 형성하였다.
[52] 도 4는본실시예에따라형성된그리드전극의단면을촬영한주사전자현미경 사진이다.
[53] 사진에나타난것과같이,본실시예에따라형성된그리드전극은단면이 삼각형의형상을나타낸다.또한,확대된사진을살펴보면,아랫부분은토출 압력에의해서실리콘기판에단단히접착되었으며，왼쪽측면과오른쪽측면 모두에서구리분말들이주변의구리분말과합쳐진안정한구조를형성하여 삼각형의단면을유지하고있는것을확인할수있다.
[54] 이와같이,본실시예에따라형성된그리드전극은 2가지측면에서종래에 예상하지못했던효과를나타낸다.
[55] 1)그리드전극의단면모양을성형하는공정이나성형을위한몰드를
사용하지않고삼각형의단면구조를갖는그리드전극을형성하였디-.
[56] 2)그리드전극을구성하는구리분말을소결하는공정이나장비를사용하지 않고도구리분말이서로결합하여안정한구조의그리드전극을형성하였다.
[57] 먼저,삼각형의단면을갖는그리드전극이형성되는원리를설명한다.
[58] 도 5는본실시예의그리드전극이삼각형의단면을형성하는원뫼를나타낸 모식도이다.
[59] 도시된것과같이，마스크로양옆이막힌슬릿에고속으로구리입자포함 에어로졸을분사하면,슬릿의내부로들어갔던기체가슬릿을빠져나오는 과정에서와류현싱 -(separation)이발생한다.이러한와류는슬릿의상부로갈수록 슬릿의증심부를향하는폭이넓어지고，슬릿의상부에병목현상 (bottle neck)과 유사한공기의막이생기며에어로졸의유동을방해한디-.이러한결과, 구리분말들을슬릿의중심으로쏠려위치하게되며，에어로졸의분사횟수 (N)가 증가할수록그리드전극의가운데를위주로구리분말이증착되어삼각형의 단면을형성한다.
[60] 이와같이마스킹장치의슬릿내부에서발생하는와류의효과를얻기
위해서는최소한슬릿의높이가폭보다커야한다.슬릿의높이가폭보다작으면 슬릿내부에층분한와류가형성되지못하여,삼각형모양의단면을갖는그리드 전극을형성할수없다.
[61] 한편,초음속노즐을통해서토출된에어로졸에포함된구리분말이기판의 표면에도달했올때의속도는 Alkhimov등에의해발표된논문 ("The Features of Cold Spray Nozzle Design", Journal of Thermal Spray Technology, Volume 10(2) June 2001)에제시된다음의수식을통해서이론적으로계산할수있다.
Figure imgf000008_0001
[63] 여기서 vp는입자의속도， a. 노즐출구에서의 1/2),
Figure imgf000008_0002
구리분말의크기, X는노즐과기판사이의거리, 는구리분말의밀도， /¾는 작동유체압력이다.
[64] 이러한수식을통해계산된본실시예에따라서초음속노즐을통해토출된 에어로졸에포함된구리분말이기판에도달한때의속도 <yp)는약 347m/s이다.
[65] 이러한계산으로부터，마스킹장치의슬릿내부에서와류의효과를얻기 009923 위해서는,슬릿내에서구리분말의속도가 250m/sec이상이어야하며，이보다 속도가낮으면와류에의한효과가발생하지않을것으로여겨진다.
[66] 도 6은본실시예에따라서형성된폭이 150 인그리드전극의단면을촬영한 주사전자현미경사진이다. (a)는 1회， (b)는 3회， (c)는 5회， (d)는 7회의에어로졸 분사를수행한경우이다.
[67] 도시된것과같이，마스킹장치의슬릿에의해서제한되기때문에그리드
전극의하부폭은일정하지만,에어로졸의분사횟수가증가할수록전극의 두께가두꺼워지는것을알수있다.측정된종횡비 (두께 /폭)는 (a)가 0.3이고,
(b)가 0.7이고, (c)가 0.8이며， (d)는 1.1이다.
[68] 또한,본실시예에따른그리드전극은에어로졸분사횟수와상관없이
삼각형의단면을갖는것올확인할수있다.
[69] 도 7은본실시예에따라서형성된폭이 300 인그리드전극의단면을촬영한 주사전자현미경사진이다. (a)는 1회, (b)는 3회, (c)는 5회, (d)는 7회의에어로졸 분사를수행한경우이다ᅳ
[70] 폭이 150 인경우에비하여폭이넓기때문에에어로졸분사에의해서전극의 두께가두꺼워지는정도가적지만，분사횟수가증가할수록두께가두꺼워져서 종횡비가높아진다.측정된종횡비 (두께 /폭)는 (a)가 0.32이고, (b)가 0.5이고,
(c)가 0.63이며 , (d)는 0.74이다.
[71] 이상과같이본실시예에따라서형성된그리드전극은，종횡비가 0.3이상으로 두꺼우면서도삼각형의단면형상을갖기때문에，단면적의확장에따른전극의 저항은낮추면서그리드전극의그림자에의한효율의저하를최소화할수 있다.
[72] 다음으로구리의소결공정을거치지않는이유에대해서설명한다.
[73] 구리의녹는점은 1084.62°C이고,본실시예에서따라서초음속노즐을통해 분사된에어로졸의은도범위는 RT~500oC이다.그러나고압으로압축되어 고속으로토출되는에어로졸에포함된구리분말은표면이살짝녹은상태가 되며，그리드전극을형성하는과정에서구리분말들이고속으로충돌하는 힘까지더해지면서구리분말들이서로안정적으로결합된다.따라서본 실시예에서는구리분말을소결하기위한별도의공정이나장비를필요로하지 않는다.
[74] 이렇게구리분말의표면이살짝녹아서서로결합하는효과를얻기위해서는 구리분말이 300m/sec이상의속도로충돌되어야할것으로여겨지며,이보다 낮은속도에서는구리분말이안정적으로결합하지못할것이다.
[75] 이상본발명을바람직한실시예를통하여설명하였는데，상술한실시예는본 발명의기술적사상을예시적으로설명한것에불과하며，본발명의기술적 사상을벗어나지않는범위내에서다양한변화가가능함은이분야에서통상의 지식을가진자라면이해할수있을것이다.따라서본발명의보호범위는특정 실시예가아니라특허청구범위에기재된사항에의해해석되어야하며,그와 동등한범위내에 있는모든기술적사상도본발명의권리범위에포함되는 것으로해석되어야할것이디-.

Claims

청구범위
Figure imgf000011_0001
태양전지의전면전극으로사용되는그리드전극을형성하는
방법으로서，
전극재료금속의분말을준비하는단계;
상기금속분말을포함하는에어로졸을마스크에형성된슬릿에 분사하는단계를포함하며,
상기분사된에어로졸이상기슬릿내에형성하는와류에의해서 상기에어로졸에포함한금속분말이삼각형의횡단면을가지는 전극을형성하는것을특징으로하는그리드전극형성방법. 청구항 1에있어서,
상기에어로졸을분사하는에어로졸분사기의노즐이
수렴 /확산 (converge/diverge)노즐인것을특징으로하는그리드 전극형성방법.
청구항 1의방법으로형성된것을특징으로하는태양전지용 그리드전극.
태양전지의전면전극으로사용되는그리드전극으로서, 횡단면이삼각형인것을특징으로하는태양전지용그리드전극. 청구항 3또는청구항 4에 있어서,
상기그리드전극의종횡비 (두께 /폭)가 0.3이상인것을특징으로 하는태양전지용그리드전극.
청구항 3또는청구항 4에 있어서,
상기그리드전극의재질이구리인것을특징으로하는
태양전지용그리드전극.
Figure imgf000011_0002
청구항 1의방법으로그리드전극을형성하는방법에사용되는 장치로서,
전극재료인금속분말을공급하는분말공급부;
상기금속분말과흔합되어에어로졸을형성하는가스를공급하는 가스공급부;
상기에어로졸을토출하는노즐;및
태양전지의광흡수층에밀착하여설치되는마스킹장치를 포함하여구성되며,
상기마스킹장치에는상기노즐에서토출된에어로졸이분사되어 상기광흡수층에증착되는슬릿이형성된것을특징으로하는 그리드전극형성장치.
Figure imgf000011_0003
청구힝 -7에 있어서,
상기마스킹장치가,상기슬릿의폭을조절하는조절수단을더 포함하는것을특징으로하는그리드전극형성장치 . [청구항 9] 청구항 8에있어서,
상기마스킹장치가,
위치가고정된고정체;
상기고정체와평행하게이격되어슬릿을형성하며,위치가 움직이는이동체;
상기이동체의위치를조절하는조절부를포함하며, 상기이동체의위치에따라서상기슬릿의폭이변하는것을 특징으로하는그리드전극형성장치.
[청구항 10] 청구항 7에있어서,
상기노즐이수렴 /확산 (converge/diverge)노즐인것을특징으로 하는그리드전극형성장치.
PCT/KR2013/009923 2012-11-06 2013-11-05 태양전지용 그리드 전극, 그리드 전극 형성 방법 및 형성 장치 Ceased WO2014073829A1 (ko)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030075784A (ko) * 2002-03-20 2003-09-26 삼성에스디아이 주식회사 고효율 태양전지 및 그 제조 방법
KR20090035355A (ko) * 2007-10-05 2009-04-09 한국전자통신연구원 고효율 태양전지 및 그 제조방법
KR20110077731A (ko) * 2009-12-30 2011-07-07 엘지전자 주식회사 태양전지
KR20120091938A (ko) * 2011-02-10 2012-08-20 고려대학교 산학협력단 태양전지 도선 전극 제조 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030075784A (ko) * 2002-03-20 2003-09-26 삼성에스디아이 주식회사 고효율 태양전지 및 그 제조 방법
KR20090035355A (ko) * 2007-10-05 2009-04-09 한국전자통신연구원 고효율 태양전지 및 그 제조방법
KR20110077731A (ko) * 2009-12-30 2011-07-07 엘지전자 주식회사 태양전지
KR20120091938A (ko) * 2011-02-10 2012-08-20 고려대학교 산학협력단 태양전지 도선 전극 제조 장치

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