WO2014072255A1 - Konvertermaterial, verfahren zur herstellung eines konvertermaterials und optoelektronisches bauelement - Google Patents
Konvertermaterial, verfahren zur herstellung eines konvertermaterials und optoelektronisches bauelement Download PDFInfo
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- WO2014072255A1 WO2014072255A1 PCT/EP2013/072941 EP2013072941W WO2014072255A1 WO 2014072255 A1 WO2014072255 A1 WO 2014072255A1 EP 2013072941 W EP2013072941 W EP 2013072941W WO 2014072255 A1 WO2014072255 A1 WO 2014072255A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
Definitions
- Converter material method for producing a
- Optoelectronic component specified with a converter material Optoelectronic component specified with a converter material.
- Converter materials are described, for example, in the following publications: DE 10 2011 113 962, C. Dang et al. "A wafer-level integrated white light emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material", Advanced Materials, 2012, published online (DOI: 10.1002 / adma .201202354).
- Component can be specified with such a converter material.
- a converter material has a porous inorganic
- the nanoparticles preferably give the converter material wavelength-converting
- the nanoparticles are preferably suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second wavelength range.
- inorganic matrix material is particularly preferably free of wavelength-converting properties.
- Matrix material can be introduced several different types of nanoparticles.
- the inorganic nanoparticles in direct contact with the surface of the inorganic
- the nanoparticles are particularly preferably in direct contact with the inorganic matrix material.
- heat removal from the nanoparticles during use of the converter material is advantageously enhanced over nanoparticles in a resin.
- the improved heat removal from the nanoparticles advantageously results in an increased stable conversion efficiency. Due to the arrangement of the nanoparticles in the pores of the inorganic matrix material, the aggregate formation of the nanoparticles among themselves can be advantageously prevented to a large extent, as they are more pure when used
- Nanoparticles usually take place.
- the pores of the inorganic matrix material are usually voids in the inorganic
- the cavities may be ordered or disordered in the inorganic matrix material.
- the pores of the inorganic matrix material have an average
- Matrix material can be determined, for example, by one of the following methods: water porosimetry,
- the inorganic matrix material is characterized, inter alia, by its overall porosity.
- Total porosity is the ratio of the volume of the pores to the total volume of the inorganic matrix material.
- the total porosity of the inorganic matrix material is hereby made up of the open porosity and the closed porosity
- the open porosity here denotes the ratio between the volume of the pores, the with each other and with the surrounding the matrix material
- the closed porosity denotes the ratio of the volume of the closed pores of the inorganic matrix material to the total volume of the inorganic matrix material.
- the inorganic matrix material preferably has an open porosity between 0.05 and 0.75 inclusive. Particularly preferably, the inorganic
- Matrix material has an open porosity between 0.1 and 0.3 inclusive.
- the pores of the inorganic matrix material have an average diameter of between 50 nanometers and 1000 nanometers inclusive.
- Such inorganic materials are also called mesoporous inorganic
- the inorganic matrix material may comprise, for example, an oxide of one of the following materials or an oxide of a mixture of the following materials: silicon, aluminum, tantalum, titanium, zirconium, cerium, tin, niobium. It is also possible that the inorganic matrix material consists of an oxide of these materials or of an oxide of a mixture of these materials.
- the inorganic nanoparticles may for example comprise one of the following materials or consist of one of the following materials: zinc sulfide, cadmium sulfide, zinc selenide, zinc oxide, cadmium selenide, cadmium oxide,
- the inorganic nanoparticles have a diameter between and including 1 nanometer and
- the inorganic nanoparticles have a diameter of between 2 nanometers and 10 nanometers inclusive.
- each nanoparticle can have an organic outer shell, which usually forms the outer surface of the nanoparticle.
- the outer shell has, for example
- the organic material that is phosphate or sulfide based.
- the organic outer shell is intended to at least reduce agglomeration of the nanoparticles.
- the above values for the diameter of the nanoparticles are understood as values for the diameter without the organic outer shell.
- the inorganic nanoparticles can also be core-shell nanoparticles.
- Core-shell nanoparticles Core-shell
- Nanoparticles usually have a core surrounded by a shell.
- the core and the shell are usually made of two different materials.
- the core is preferably one
- the core generally has wavelength-converting properties, that is, the core is usually suitable for electromagnetic radiation of the first wavelength range in electromagnetic radiation of the second
- the shell of the core-shell nanoparticles for example, also a semiconductor material, in particular a III-V semiconductor material, have or from such a
- Material exist.
- one of the following materials is suitable for the shell: zinc sulfide, zinc selenide, zinc oxide.
- the nanoparticles are each arranged at a distance from one another on the surface of the pores.
- a partial area of the surface of the pores is exposed between the nanoparticles and is not covered with nanoparticles. It is at this point on it
- Nanoparticles are in direct contact with each other. More preferably, at least 95% of the nanoparticles are spaced apart on the surface of the pores.
- a further large number of nanoparticles is applied on the surface of the pores, which are suitable for
- the inorganic matrix material is of another variety Loaded nanoparticles whose wavelength-converting
- the one nanoparticles are suitable for converting blue light of the first wavelength range into green light of the second wavelength range, while the further nanoparticles are suitable for converting blue light of the first wavelength range into red light of the third wavelength range.
- the first wavelength range, the second wavelength range and the third wavelength range are particularly preferably different from one another, wherein it is not precluded that the wavelength ranges partially overlap.
- the first wavelength range may, for example, comprise blue light or be formed of blue light.
- the second wavelength range may include, for example, yellow light or be formed of yellow light.
- Converter material can be generated, which emits white light when excited with blue light, which is emitted for example by a semiconductor body.
- the nanoparticles are only on the surface of the pores
- the volume range of the pores is free of the nanoparticles.
- the volume area of the pores is filled with air.
- the converter material can be present for example as a multiplicity of converter particles.
- the converter particles have a diameter between 1 micron and 50 microns inclusive.
- it is also possible that the converter particles have a
- Converter particles with a diameter of between 20 nanometers and 1000 nanometers inclusive in particular advantageously have a low scattering of light. If the converter material is in the form of converter particles, this has the advantage that the
- Converter material can be further processed by one of the following methods: casting, printing,
- electrophoretic deposition spray coating, molding, sol-gel process.
- the converter particles are usually first in a resin, such as a silicone, an epoxy or a mixture of these materials, introduced and then processed.
- a resin such as a silicone, an epoxy or a mixture of these materials.
- the mixture may contain, in addition to the resin and the converter particles, other substances which are usually used in each case
- Converter particles are usually positioned around a semiconductor body and then cured.
- the semiconductor body arranged in a cavity which is filled with the mixture of resin and converter particles.
- the mixture of resin and converter particles can also be further processed by printing, in particular by screen printing.
- screen printing the mixture of resin and
- Converter particles usually with the help of a sieve in a desired shape, for example in the form of
- Radiation exit surface of a semiconductor body are applied, for example by a pick-and-place method.
- the mixture with the resin and the converter particles usually further comprises an organic solvent, which is sprayed on a desired surface, such as a glass
- Converter particles introduced into an electrophoresis bath The converter particles carry electrical charges on their surface in the electrophoresis bath. Also, the surface on which the converter particles are to be deposited is provided in the electrophoresis bath. Subsequently, the converter particles are so by applying an electrical voltage to the Elektrophoresebad
- the converter particles deposited in a layer are produced with the aid of a binder, for example an organic resin,
- the converter particles are usually introduced into a sol, from which a gel is formed by aging.
- the gel is usually made by sintering into a ceramic or a jar
- Platelets be formed as a dome-shaped platelets or platelets with an open space of any shape.
- Such a converter material particularly preferably comprises an inorganic matrix material which may be in the form of flat platelets, dome-shaped platelets or platelets according to a Open space is formed of any shape and its
- a converter material which is formed as platelets, regardless of whether the platelet is flat, dome-shaped or formed according to a free surface of any shape, preferably has a thickness of between 10 microns inclusive and 1 millimeter. More preferably, such a converter material has a thickness between 50 microns inclusive and 200 inclusive
- a converter material which is designed as a flat plate, for example, can be provided on the
- a main surface of the planar plate has the same or a similar shape of the radiation exit surface of the semiconductor body.
- the planar plate has the same or a similar shape of the radiation exit surface of the semiconductor body.
- Platelet may be formed as a rectangle or as a square, wherein a recess is provided for a bonding pad of the semiconductor body.
- the recess for the bonding pad is in this case preferably arranged in a corner of the rectangle or the square.
- a converter material which is formed as a dome-shaped plate, particularly preferably has a dome-shaped shape with a round base, for example one
- Such a converter material may, for example, be the side length of a rectangle or a square, to which the base area is inscribed.
- the dome-shaped converter material is furthermore preferably rotationally symmetrical to a rotational axis.
- the edge length of such a conversion material may also be the axis section on the axis of rotation, which corresponds to the height of the dome.
- a converter material having a main surface corresponding to an open space of any shape is preferably formed rotationally symmetrical to a rotation axis. Furthermore, it is additionally or alternatively also possible for a base area of the converter material in the form of the free area to be point-symmetrical.
- edge length of a conversion material which is present as a platelet with an open surface of any desired shape may, for example, be used to denote the side length of a rectangle or a square in which the base surface is written in. Furthermore, the section on an axis of rotation, that of height the free surface corresponds, be referred to as the edge length of the conversion material.
- a method for producing a converter material preferably comprises the following steps:
- the nanoparticles can be adsorbed from a solvent on the surface of the pores.
- a suspension of the nanoparticles in the solvent is preferably first formed.
- the suspension can also have more
- Matrix material introduced into the suspension For example, the inorganic matrix material is bathed in the suspension.
- nanoparticles particularly preferably fill the pores of the inorganic matrix material as completely as possible.
- the nanoparticles in the solvent usually adsorb on the surface of the pores over time. After adsorbing the nanoparticles on the surface of the pores, the solvent is removed again from the pores,
- the nanoparticles adsorb on the surface of the pores during the drying process.
- the nanoparticles are in the
- Solvent molecules thus prevent aggregation of the nanoparticles among themselves. Furthermore, with a
- the nanoparticles can be achieved on the surface of the pores of the finished converter material.
- the nanoparticles in the solvent have a concentration not greater than 150 mg / ml.
- Solvent a concentration not greater than 10 mg / ml.
- a solvent for example, one of the following substances can be used: toluene, xylene, pentane.
- An optoelectronic component comprises in particular:
- a converter material which is suitable for at least partially converting the radiation of the first wavelength range which is emitted by the semiconductor body into electromagnetic radiation of the second wavelength range.
- Converter material suitable to be used in combination with a semiconductor body, wherein the
- Semiconductor body is used to blue light
- Component may have a plurality of different converter materials.
- the converter material is particularly preferably in the beam path of the semiconductor body.
- the converter material is preferably arranged downstream of the semiconductor body in its emission direction.
- the converter material is in direct contact with the semiconductor body, especially
- Radiation exit surface of the semiconductor body arranged.
- Platelets be formed as a dome-shaped platelets or platelets with an open space of any shape and be spaced from the semiconductor body in the beam path of the semiconductor body to be arranged. Further advantageous embodiments and developments of the invention will become apparent from the embodiments described below in conjunction with the figures.
- FIGS. 5 and 6 each show a schematic
- Sectional view of a converter material according to one embodiment.
- FIGS. 7 to 11 show schematic sectional representations of an optoelectronic component according to various exemplary embodiments.
- inorganic nanoparticles 1 provided in a solvent 2, wherein the nanoparticles 1 are suitable for electromagnetic radiation of a first
- Wavelength range into electromagnetic radiation of a second wavelength range to convert ( Figure 1).
- the nanoparticles 1 and the solvent 2 usually form a suspension.
- the nanoparticles 1 are in this case suitable for converting electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range.
- the nanoparticles 1 have, for example, a diameter between
- the nanoparticles 1 may comprise one of the following materials or consist of one of the following materials: zinc sulfide, cadmium sulfide, zinc selenide, zinc oxide, cadmium selenide, cadmium oxide, indium phosphide,
- the nanoparticles 1 may also be core-shell nanoparticles.
- the solvent 2 for example, toluene, xylene or pentane is suitable.
- the nanoparticles 1 are particularly preferably diluted in the solvent 2.
- the nanoparticles 1 in the solvent 2 preferably have a concentration which is not greater than 10 mg / ml.
- porous inorganic matrix material 3 having a plurality of pores 4 is provided.
- Matrix material 4 as a particle, preferably a
- FIG. 3 shows a schematic sectional view of a detail of one of the particles of FIG. 2 and in particular an enlargement of the pores 4 of the inorganic one
- Matrix material for example, have a middle
- an inorganic matrix material 3 is also suitable whose pores 4 are larger and, for example, have an average diameter of between 50 nm and 1000 nm inclusive (FIG. 3).
- the particles of the inorganic porous matrix material 3 are bathed in the suspension with the nanoparticles 1, for example.
- the particles of the inorganic porous matrix material 3 are bathed in the suspension with the nanoparticles 1, for example.
- the suspension particularly preferably fills the pores 4 of the particles of the inorganic
- Matrix material 3 as completely as possible.
- the nanoparticles 1 can now adsorb on a surface of the pores 4. Subsequently, the solvent 2 is removed again from the pores 4, for example by a
- FIG. 5 shows schematically a converter material 5 which is produced as the end product of the method according to the exemplary embodiment of FIGS. 1 to 4.
- the converter material 5 according to the exemplary embodiment of FIG. 5 is designed as a converter particle and has a porous inorganic matrix material 3. On the
- Surface of the pores 4 of the inorganic matrix material 3 is a plurality of inorganic nanoparticles 1
- the nanoparticles 1 are arranged only on the surface of the pores 4, while a volume region of the pores 4 is free of the nanoparticles 1.
- the volume region of the pores 4 is filled with air.
- the nanoparticles 1 are in this case spaced apart on the surface of the pores 4 applied. In other words, the vast majority of nanoparticles 1 are not in direct contact with each other.
- the converter material 5 according to the exemplary embodiment of FIG. 6 has a further multiplicity of nanoparticles 1 'on the surface of the pores 4 of FIG.
- the nanoparticles 1, 1 ' are arranged only on the surface of the pores 4, while a
- Volume range is free of nanoparticles 1, 1 '.
- the further plurality of nanoparticles 1 ' is suitable for electromagnetic radiation of the first wavelength range in electromagnetic radiation of a third
- the first, the second and the third wavelength range are different from each other.
- the first wavelength range particularly preferably comprises blue light or is formed from blue light
- the second wavelength range particularly preferably has green light or is formed from green light.
- the third Wavelength range particularly preferably comprises red light or is formed of red light.
- the converter material 5 is according to the
- Embodiment of Figure 6 suitable for converting blue light emitted by a semiconductor body (not shown) partially in green light and partially in red light, while another part of the blue light passes through the converter material 5 unconverted.
- a converter material 5 is particularly suitable in
- Embodiment of Figure 7 has a component housing 6 with a recess 7. On a bottom of the recess 7, a semiconductor body 8 is mounted, which is adapted to emit blue light from a radiation exit surface 9 during operation. The semiconductor body 8 is still
- the recess 7 of the component housing 6 is provided with a
- the potting 11 comprises an organic resin, for example a silicone or an epoxide or a mixture of these two materials, into which the particulate converter material 5, as has already been described with reference to FIGS. 5 and 6, is introduced. If converter particles 5 with a type of nanoparticles 1 are introduced into the encapsulation, as described for example with reference to FIG. 5, then these are suitable, for example, for the blue radiation of the semiconductor body 8 coming from the latter Radiation exit surface 9 is emitted, partially convert it into yellow radiation.
- the optoelectronic component emits mixed-colored white light, the converted yellow light of the second wavelength range, and
- converter particles 5 with two types of nanoparticles 1, 1 ' are contained in the encapsulation 11, as described, for example, with reference to FIG. 6, then one type of nanoparticles 1 is suitable, for example, for the blue radiation of the
- Semiconductor body 8 which is emitted from the radiation exit surface 9, partially convert into green radiation, while the other type of nanoparticles 1 'is adapted to partially convert the blue radiation of the semiconductor body 8 into red radiation. Another part of the blue radiation of the semiconductor body 8 passes through the potting 11
- the optoelectronic component then emits mixed-colored white light, the converted green and red light of the second and the third wavelength range, and unconverted blue light of the first one
- Wavelength range includes.
- Embodiment of Figure 8 also includes
- Component housing 6 with a recess 7, on the bottom of a radiation-emitting semiconductor body 8 is mounted.
- the semiconductor body 8 is in turn suitable for the operation of electromagnetic radiation of a first
- a converter material 5 which is adapted to convert radiation of the first wavelength range into radiation of a second wavelength range.
- the converter material 5 is in the beam path of the
- Semiconductor body 8 is arranged. The radiation of the
- Semiconductor body 8 passes substantially completely through the converter material 5.
- the converter material 5 like the converter materials 5 according to FIGS. 5 and 6, has pores on the surface of which a multiplicity of nanoparticles 1 are applied (not shown).
- the nanoparticles 1 give the
- the nanoparticles 1 are suitable for electromagnetic radiation of the first
- Wavelength range into electromagnetic radiation of the second wavelength range to convert.
- the converter material 5 is formed here as a flat plate.
- the planar plate fills an upper opening 12 of the recess 7 of the component housing 7 preferably
- Converter wafer 5 most preferably has a thickness of between 10 microns and 1 millimeter inclusive.
- the geometric shape of a main surface of the flat plate 5 is preferably in accordance with the geometric shape of
- Opening 12 of the recess 7 is formed.
- the opening 12 may be rectangular or square.
- the converter plate 5 is preferably rectangular or square.
- a side of the square or the rectangle is particularly preferably between 50 microns inclusive and
- Semiconductor body 8 is applied.
- the semiconductor body 8 is in turn suitable for electromagnetic radiation of a first wavelength range in electromagnetic
- the optoelectronic component comprises
- Converter particles 5 as they have already been described for example with reference to the figures 5 or 6.
- the converter particles 5 are in this case introduced into a resin, which is likewise designed in the form of a flat plate.
- the resin-based converter plate is in the beam path of the semiconductor body
- Embodiment of Figure 10 includes a carrier 13, on which a radiation-emitting semiconductor body. 8
- the semiconductor body 8 is suitable for electromagnetic radiation of a first
- the optoelectronic component comprises a dome-shaped converter material 5, which is applied to the carrier 13.
- the dome-shaped converter material 5 in this case surrounds the semiconductor body 8 and is designed and positioned such that it is at least predominantly in the
- the dome-shaped converter material 5 may, for example, a dome-shaped inorganic matrix material 3 with a
- Embodiment of Figure 11 includes as the
- a carrier 13 on which a radiation-emitting semiconductor body 8 is applied and a dome-shaped converter element.
- the dome-shaped converter element is resin-based, as in the case of the optoelectronic component according to FIG.
- the dome-shaped converter element in the optoelectronic component according to FIG. 11 has converter particles 5, as have already been described, for example, in connection with FIGS. 5 and 6, which are in a dome-shaped manner
- Converter element can be produced for example by Molden.
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Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112013005312.8T DE112013005312A5 (de) | 2012-11-07 | 2013-11-04 | Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement |
| US14/441,154 US10297727B2 (en) | 2012-11-07 | 2013-11-04 | Converter material, method for producing a converter material, and optoelectronic component |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012110668.1A DE102012110668A1 (de) | 2012-11-07 | 2012-11-07 | Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement |
| DE102012110668.1 | 2012-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014072255A1 true WO2014072255A1 (de) | 2014-05-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2013/072941 Ceased WO2014072255A1 (de) | 2012-11-07 | 2013-11-04 | Konvertermaterial, verfahren zur herstellung eines konvertermaterials und optoelektronisches bauelement |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10297727B2 (de) |
| DE (2) | DE102012110668A1 (de) |
| WO (1) | WO2014072255A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
| DE102014108282A1 (de) | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie Lichtquelle mit einem optoelektronischen Halbleiterbauelement |
| DE102014116778A1 (de) | 2014-11-17 | 2016-05-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Konversionselements, Konversionselement sowie optoelektronisches Bauelement mit einem solchen Konversionselement |
| DE102014117764A1 (de) | 2014-12-03 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches Halbleiterbauteil und Verfahren zu dessen Herstellung |
| EP3324174A4 (de) * | 2015-07-13 | 2019-03-06 | Sony Corporation | Verfahren zur verbesserung der lichtemission, verfahren für den nachweis von stoffen, vorrichtung für den nachweis von stoffen und lichtemissionsverstärker |
| KR20180051606A (ko) * | 2015-09-10 | 2018-05-16 | 메르크 파텐트 게엠베하 | 광-변환 물질 |
| EP3188260B1 (de) * | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostrukturmaterialstrukturen und verfahren |
| WO2017197392A1 (en) * | 2016-05-13 | 2017-11-16 | Osram Sylvania Inc. | Wavelength converters including a porous matrix, lighting devices including the same, and methods of forming the same |
| DE102017104127A1 (de) | 2017-02-28 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102017104133A1 (de) | 2017-02-28 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102018128753A1 (de) | 2018-11-15 | 2020-05-20 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines konversionselements, konversionselement und strahlungsemittierendes bauelement |
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Also Published As
| Publication number | Publication date |
|---|---|
| US10297727B2 (en) | 2019-05-21 |
| DE112013005312A5 (de) | 2015-07-23 |
| DE102012110668A1 (de) | 2014-05-08 |
| US20150255688A1 (en) | 2015-09-10 |
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