WO2014048553A3 - Led lighting devices and methods of manufacturing the same - Google Patents

Led lighting devices and methods of manufacturing the same Download PDF

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Publication number
WO2014048553A3
WO2014048553A3 PCT/EP2013/002850 EP2013002850W WO2014048553A3 WO 2014048553 A3 WO2014048553 A3 WO 2014048553A3 EP 2013002850 W EP2013002850 W EP 2013002850W WO 2014048553 A3 WO2014048553 A3 WO 2014048553A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
methods
same
led lighting
lighting devices
Prior art date
Application number
PCT/EP2013/002850
Other languages
French (fr)
Other versions
WO2014048553A2 (en
Inventor
Daniel Muessli
Original Assignee
Daniel Muessli
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daniel Muessli filed Critical Daniel Muessli
Publication of WO2014048553A2 publication Critical patent/WO2014048553A2/en
Publication of WO2014048553A3 publication Critical patent/WO2014048553A3/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Abstract

The present invention relates to LED lighting devices and methods for manufacturing the same, providing better performance and higher efficiency with higher power factor, longer lifetime, more uniform light distribution as well as with less materials or cost to build.
PCT/EP2013/002850 2012-09-26 2013-09-23 Led lighting devices and methods of manufacturing the same WO2014048553A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261705643P 2012-09-26 2012-09-26
US61/705,643 2012-09-26

Publications (2)

Publication Number Publication Date
WO2014048553A2 WO2014048553A2 (en) 2014-04-03
WO2014048553A3 true WO2014048553A3 (en) 2014-05-30

Family

ID=49304873

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/002850 WO2014048553A2 (en) 2012-09-26 2013-09-23 Led lighting devices and methods of manufacturing the same

Country Status (2)

Country Link
DE (1) DE202013008610U1 (en)
WO (1) WO2014048553A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014110054A1 (en) 2014-07-17 2016-01-21 Osram Oled Gmbh Optoelectronic assembly and method for manufacturing an optoelectronic assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings
JP2009182026A (en) * 2008-01-29 2009-08-13 Toshiba Corp Semiconductor light-emitting apparatus and method of manufacturing semiconductor light-emitting apparatus
US20110014734A1 (en) * 2009-07-20 2011-01-20 Lu Lien-Shine Method for fabricating flip chip gallium nitride light emitting diode
US20110273880A1 (en) * 2006-08-29 2011-11-10 Toshiba Lighting & Technology Corporation Illumination apparatus having a plurality of semiconductor light-emitting devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings
US20110273880A1 (en) * 2006-08-29 2011-11-10 Toshiba Lighting & Technology Corporation Illumination apparatus having a plurality of semiconductor light-emitting devices
JP2009182026A (en) * 2008-01-29 2009-08-13 Toshiba Corp Semiconductor light-emitting apparatus and method of manufacturing semiconductor light-emitting apparatus
US20110014734A1 (en) * 2009-07-20 2011-01-20 Lu Lien-Shine Method for fabricating flip chip gallium nitride light emitting diode

Also Published As

Publication number Publication date
DE202013008610U1 (en) 2014-04-22
WO2014048553A2 (en) 2014-04-03

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