WO2014044029A1 - 一种低噪声压控振荡器 - Google Patents

一种低噪声压控振荡器 Download PDF

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Publication number
WO2014044029A1
WO2014044029A1 PCT/CN2013/072426 CN2013072426W WO2014044029A1 WO 2014044029 A1 WO2014044029 A1 WO 2014044029A1 CN 2013072426 W CN2013072426 W CN 2013072426W WO 2014044029 A1 WO2014044029 A1 WO 2014044029A1
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WIPO (PCT)
Prior art keywords
node
capacitor
circuit
controlled oscillator
resistor
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Ceased
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PCT/CN2013/072426
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English (en)
French (fr)
Inventor
吕志强
陈岚
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority claimed from CN201210357240.8A external-priority patent/CN103684441B/zh
Priority claimed from CN201210360991.5A external-priority patent/CN103684259B/zh
Priority claimed from CN201210357276.6A external-priority patent/CN102843097B/zh
Priority claimed from CN201210360745.XA external-priority patent/CN103684258A/zh
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to US14/429,807 priority Critical patent/US9312808B2/en
Publication of WO2014044029A1 publication Critical patent/WO2014044029A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0088—Reduction of noise
    • H03B2200/009—Reduction of phase noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair

Definitions

  • the present invention relates to the field of integrated circuit technology, and in particular, to a low noise voltage controlled oscillator.
  • a voltage-controlled oscillator is an oscillating circuit that has an output frequency corresponding to an input control voltage.
  • Voltage-controlled oscillators are one of the most important basic circuits in integrated circuits. There are two main ways to implement them: Ring VCO and LC VCO. Voltage-controlled oscillators are widely used in Clock Synchronization circuits in microprocessors; Frequency Synthesizers in wireless communication transceivers; Clock Recovery Circuits in CRC (Clock Recovery Circuit) And in multi-phase sampling (Multi-phase Sampling) circuits.
  • Phase noise is one of the main parameters for measuring the performance of a voltage controlled oscillator. In most cases, the phase noise performance of a voltage controlled oscillator is the most important factor affecting the sensitivity of the integrated receiver.
  • the signal spectrum of the ideal voltage-controlled oscillator output is a pulse function, but due to the various noise sources in the actual circuit, the signal spectrum characteristics of the voltage-controlled oscillator output are the frequency mask curves.
  • the noise sources in the voltage-controlled oscillator circuit can be divided into two categories: device noise and external interference noise.
  • the former mainly includes thermal noise and flicker noise; the latter mainly includes the village bottom and power supply noise.
  • the device noise of the voltage controlled oscillator is mainly derived from the series parasitic resistance of the on-chip inductor and variable capacitor, the switched differential pair and the tail current source.
  • the technical problem to be solved by the present invention is to provide a low noise voltage controlled oscillator having a large output voltage amplitude, which can reduce phase noise of the entire circuit and improve phase noise performance.
  • the invention provides a low noise voltage controlled oscillator, comprising: a resonant circuit, a negative resistance circuit, a current source circuit and a feedback circuit;
  • the resonant circuit is configured to generate an oscillating signal of the voltage controlled oscillator, wherein the resonant circuit is an inductive capacitive resonant circuit, wherein the capacitor adopts a MOS capacitive reactance tube or a reverse diode;
  • the negative resistance circuit is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit; and the current source circuit is configured to generate a current of the voltage controlled oscillator;
  • the feedback circuit is configured to feed back an oscillating signal generated by the resonant circuit to the current source circuit.
  • the current supply circuit in the current source circuit provides a main device as a MOS transistor or a triode; when the current supply current in the current source circuit provides a main device as a MOS transistor, the current source circuit includes: a first MOS transistor, Two MOS transistors, a fifth resistor, a sixth resistor, a ninth capacitor, and a tenth valley,
  • the gate of the first MOS transistor is connected to the ninth capacitor of the ground, the gate is the input end of the first feedback signal of the feedback circuit, and the source of the first MOS transistor is grounded;
  • the gate of the second MOS transistor is connected to the tenth capacitor of the ground, the gate is the input end of the second feedback signal of the feedback circuit, and the source of the second MOS transistor is grounded;
  • the drain of the first MOS transistor is connected to the drain of the second MOS transistor, and the connected node is connected as an input end of the negative resistance circuit and an output end of the current source circuit;
  • One end of the fifth resistor is connected to the gate of the first MOS tube, and the other end is connected to the third control voltage;
  • One end of the sixth resistor is connected to the gate of the second MOS tube, and the other end is connected to the third control voltage;
  • the current source circuit When the current in the current source circuit provides a main device as a triode, the current source circuit includes: a third bipolar transistor, a fourth bipolar transistor, a fifth resistor, a sixth resistor, a ninth capacitor, and a Ten capacitors;
  • the base of the third bipolar transistor is connected to a grounded ninth capacitor, the base is an input end of the first feedback signal, and the emitter of the third bipolar transistor is grounded;
  • the base of the fourth bipolar transistor is connected to a grounded tenth capacitor, the base is an input end of the second feedback signal, and the emitter of the fourth bipolar transistor is grounded;
  • the collector of the third bipolar transistor is connected to the collector of the fourth bipolar transistor, and the connected node is connected to the output end of the current source circuit as an input end of the negative resistance circuit;
  • One end of the fifth resistor is connected to the base of the third bipolar transistor, and the other end is connected to the third control voltage;
  • One end of the sixth resistor is connected to the base of the fourth bipolar transistor, and the other end is connected to a third control voltage.
  • the capacitance in the resonant circuit uses a MOS capacitive tube
  • the resonant circuit includes: a differential inductor, a first MOS capacitive reactance tube, a second MOS capacitive reactance tube, a third capacitor, a fourth capacitor, a first resistor, and a second resistor;
  • One end of the differential inductor is connected to the first node, and the other end is connected to the second node;
  • the gate of the first MOS capacitive reactance tube is connected to the third node, and the drain and the source are short-circuited together to connect the first control voltage;
  • the gate of the second MOS capacitive reactance tube is connected to the fourth node, and the drain and the source are shorted together to connect the first control voltage;
  • One end of the first resistor is connected to the third node, and the other end is grounded;
  • One end of the second resistor is connected to the fourth node, and the other end is grounded;
  • the two ends of the third capacitor are respectively connected to the first node and the third node, and two ends of the fourth capacitor are respectively connected to the second node and the fourth node;
  • the first node is a first phase contact of the resonant circuit and the negative resistance circuit, and outputs a first resonance signal
  • the second node is a second phase connection between the resonant circuit and the negative resistance circuit, and outputs a second resonance Signal
  • the resonant circuit includes: a differential inductor, a first reverse diode, a second reverse diode, a third capacitor, a fourth capacitor, a first resistor, and a second resistor;
  • One end of the differential inductor is connected to the first node, and the other end is connected to the second node;
  • the anode of the first reverse diode is connected to the third node, the cathode is connected to the first control voltage; the anode of the second reverse diode is connected to the fourth node, and the cathode is connected to the first control voltage; One end is connected to the third node, and the other end is grounded;
  • One end of the second resistor is connected to the fourth node, and the other end is grounded;
  • the two ends of the third capacitor are respectively connected to the first node and the third node, and two ends of the fourth capacitor are respectively connected to the second node and the fourth node;
  • the first node is a first phase contact of the resonant circuit and the negative resistance circuit, and outputs a first resonance signal
  • the second node is a second phase connection between the resonant circuit and the negative resistance circuit, and outputs a second resonance signal
  • the negative resistance circuit includes: a first bipolar transistor, a second bipolar transistor, a third resistor, a fourth resistor, a fifth capacitor, a sixth capacitor, and an eleventh capacitor;
  • a base of the first bipolar transistor is connected to the fifth node, a collector is connected to the first node, and the first node is a first contact point of the negative resistance circuit and the resonant circuit;
  • a base of the second bipolar transistor is connected to the sixth node, a collector is connected to the second node, and the second node is a second contact point of the negative resistance circuit and the resonant circuit;
  • the emitter of the first bipolar transistor is connected to the emitter of the second bipolar transistor, and the connected node is connected to the output end of the current source circuit as an input end of the negative resistance circuit;
  • One end of the third resistor is connected to the fifth node, and the other end is connected to the second control voltage; one end of the fourth resistor is connected to the sixth node, and the other end is connected to the second control voltage; one end of the fifth capacitor is connected to the a first node, the other end is connected to the sixth node; one end of the sixth capacitor is connected to the second node, and the other end is connected to the fifth node; two ends of the eleventh capacitor are respectively connected to the second control voltage and Ground.
  • the feedback circuit includes: a seventh capacitor and an eighth capacitor;
  • One end of the seventh capacitor is connected to the first output end of the resonant circuit, and the other end is connected to the first signal input end of the current source circuit, and the first resonant signal is fed back to the current source circuit through the seventh capacitor, the seventh capacitor
  • the other end of the voltage controlled oscillator is the first output;
  • One end of the eighth capacitor is connected to the second output end of the resonant circuit, the other end is connected to the second signal input end of the current source circuit, and the second resonant signal is fed back to the current source circuit through the eighth capacitor, the eighth capacitor The other end is the second output of the voltage controlled oscillator.
  • the capacitances of the third capacitor and the fourth capacitor are at least 10 times larger than the capacitances of the first MOS capacitive tube and the second MOS capacitive tube.
  • the first MOS capacitive reactance tube and the second MOS capacitive reactance tube work in an accumulation region or are exhausted Area.
  • the first bipolar transistor and the second bipolar transistor are in a forward working area.
  • the third bipolar transistor and the fourth bipolar transistor are in a forward working area.
  • the first reverse diode and the second reverse diode operate in a reverse working area.
  • the first MOS transistor and the second MOS transistor are in a saturation region.
  • the present invention has the following advantages:
  • the current source circuit is used to generate a current of the voltage controlled oscillator; the resonant circuit is used to generate an oscillation signal of the voltage controlled oscillator; the resonant circuit is an inductor a capacitive resonant circuit in which a capacitor uses a MOS capacitive reactance tube to increase a tuning range of the circuit; a negative resistance circuit is used to generate a negative resistance to cancel a positive resistance generated by the resonant circuit; and the feedback circuit is configured to apply the resonant The oscillating signal generated by the circuit is fed back to the current source circuit, thereby injecting a new current into the current source, thereby improving the efficiency of use of the voltage controlled oscillator.
  • the voltage controlled oscillator of the embodiment of the present invention has a larger output voltage amplitude. The greater the output voltage amplitude of the voltage controlled oscillator, the better its phase noise performance.
  • FIG. 1 is a schematic diagram of a voltage controlled oscillator in the prior art
  • Embodiment 1 of a low noise voltage controlled oscillator provided by the present invention
  • Embodiment 2 of a low noise voltage controlled oscillator provided by the present invention
  • Embodiment 4 is a schematic diagram of Embodiment 3 of a low noise voltage controlled oscillator provided by the present invention.
  • Embodiment 4 is a schematic diagram of Embodiment 4 of a low noise voltage controlled oscillator provided by the present invention.
  • Embodiment 5 is a schematic diagram of Embodiment 5 of a low noise voltage controlled oscillator provided by the present invention.
  • Embodiment 6 is a circuit diagram of Embodiment 6 of the low noise voltage controlled oscillator provided by the present invention.
  • Embodiment 7 of the low noise voltage controlled oscillator provided by the present invention.
  • Embodiment 8 is a circuit diagram of Embodiment 8 of the low noise voltage controlled oscillator provided by the present invention.
  • the figure is a schematic diagram of Embodiment 1 of a low noise voltage controlled oscillator provided by the present invention.
  • the low noise voltage controlled oscillator provided in this embodiment includes: a resonant circuit 100, a negative resistance circuit 200, Current source circuit 300 and feedback circuit 400:
  • the resonant circuit 100 is configured to generate an oscillating signal of a voltage controlled oscillator, and the resonant circuit 100 is an inductor-capacitor resonant circuit, wherein the capacitor adopts a MOS capacitive reactance tube;
  • the negative resistance circuit 200 is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit 100;
  • the current source circuit 300 is configured to generate a current for operating the voltage controlled oscillator;
  • the feedback circuit 400 is configured to feed back an oscillating signal generated by the resonant circuit 100 to the current source circuit 300.
  • the current source circuit 300 is used to generate a current of the voltage controlled oscillator; the resonant circuit 100 is used to generate an oscillating signal of the voltage controlled oscillator; and the resonant circuit 100 is an inductor and a capacitor.
  • the capacitor uses a MOS capacitive tube to increase the tuning range of the circuit;
  • the negative resistance circuit 200 is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit 100;
  • the feedback circuit 400 is configured to The oscillating signal generated by the resonant circuit 100 is fed back to the current source circuit 300, thereby injecting a new current into the current source circuit 300, improving the efficiency of use of the voltage controlled oscillator.
  • the voltage controlled oscillator of the embodiment of the present invention has a larger output voltage amplitude. The greater the output voltage amplitude of the voltage controlled oscillator, the better the phase noise performance.
  • the capacitor in the resonant circuit 100 in the embodiment shown in Fig. 2 employs a MOS capacitive tube, and an embodiment in which a capacitor in the resonant circuit employs a reverse diode is described below.
  • the figure is a schematic diagram of Embodiment 2 of a low noise voltage controlled oscillator provided by the present invention.
  • the low noise voltage controlled oscillator provided in this embodiment includes: a resonant circuit 100, a negative resistance circuit 200, a current source circuit 300, and a feedback circuit 400:
  • the resonant circuit 100 is configured to generate an oscillating signal of a voltage controlled oscillator, and the resonant circuit 100 is an inductor-capacitor resonant circuit, wherein the capacitor uses a reverse diode;
  • the negative resistance circuit 200 is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit 100;
  • the current source circuit 300 is configured to generate a current for operating the voltage controlled oscillator;
  • the feedback circuit 400 is configured to feed back an oscillating signal generated by the resonant circuit 100 to the current source circuit 300.
  • the current source circuit 300 is used to generate a current of the voltage controlled oscillator; the resonant circuit 100 is used to generate an oscillating signal of the voltage controlled oscillator; and the resonant circuit 100 is an inductor and a capacitor.
  • the feedback circuit 400 is configured to feed back an oscillation signal generated by the resonant circuit 100 to the current source circuit 300, thereby injecting a new current into the current source circuit 300.
  • the current increases the efficiency of the voltage controlled oscillator.
  • the voltage controlled oscillator of the embodiment of the present invention has a larger output voltage amplitude. The greater the output voltage amplitude of the voltage controlled oscillator, the better its phase noise performance.
  • FIG. 4 the figure is a schematic diagram of Embodiment 3 of a low noise voltage controlled oscillator provided by the present invention.
  • the embodiment of the present invention provides a low noise voltage controlled oscillator, including: a resonant circuit 100, a negative resistance circuit 200, a current source circuit 300, and a feedback circuit 400;
  • the resonant circuit 100 is configured to generate an oscillating signal of a voltage controlled oscillator, and the resonant circuit 100 is an inductor-capacitor resonant circuit, wherein the capacitor uses a reverse diode;
  • the negative resistance circuit 200 is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit 100.
  • the feedback circuit 400 is configured to feed back an oscillation signal generated by the resonant circuit 100 to the current source circuit. 300;
  • the current source circuit 300 is configured to generate a current for operating the voltage controlled oscillator. Specifically, the method includes: a first MOS transistor M1, a second MOS transistor M2, a fifth resistor R5, a sixth resistor R6, a ninth capacitor C9, and a tenth Capacitor C10;
  • the gate of the first MOS transistor M1 is connected to the grounded ninth capacitor C9, the gate is the input end of the first feedback signal of the feedback circuit 400, and the source of the first MOS transistor M1 is grounded;
  • the gate of the second MOS transistor M2 is connected to the grounded tenth capacitor C10, the gate is the input end of the second feedback signal of the feedback circuit 400, and the source of the second MOS transistor M2 is grounded;
  • the drain of the first MOS transistor M1 is connected to the drain of the second MOS transistor M2, and the node connected as the input end of the negative resistance circuit 200 is connected to the output end of the current source circuit 300;
  • One end of the fifth resistor R5 is connected to the gate of the first MOS transistor M1, and the other end is connected to the third control voltage VBIAS;
  • One end of the sixth resistor R6 is connected to the gate of the second MOS transistor M2, and the other end is connected to the third control voltage VBIAS.
  • Ml can be made by controlling the voltage level of the third control voltage VBIAS. And M2 is in the saturation zone.
  • C9 and C10 act as filters to filter out the high frequency signals generated by Q3 and Q4.
  • the current source circuit 300 is used to generate a current of the voltage controlled oscillator; the resonant circuit 100 is used to generate an oscillating signal of the voltage controlled oscillator; and the resonant circuit 100 is an inductor and a capacitor.
  • a resonant circuit in which a capacitor employs a reverse diode in which a capacitor employs a reverse diode; a negative resistance circuit 200 for generating a negative resistance to cancel a positive resistance generated by the resonant circuit 100; the feedback circuit 400 for oscillating a signal generated by the resonant circuit 100
  • the current source circuit 300 is fed back to inject a new current into the current source circuit 300 to improve the efficiency of use of the voltage controlled oscillator.
  • the current source current uses the first MOS transistor and the second MOS transistor, and the voltage controlled oscillator of the embodiment of the present invention has a larger output voltage because the first MOS transistor and the second MOS transistor have smaller threshold voltages. Amplitude. The greater the output voltage amplitude of the voltage controlled oscillator, the better the phase noise performance.
  • FIG. 5 the figure is a schematic diagram of Embodiment 4 of a low noise voltage controlled oscillator provided by the present invention.
  • the difference between Fig. 5 and Fig. 4 is that the capacitance in the resonant circuit 100 is a MOS capacitive tube.
  • the current source circuit 300 is used to generate a current of the voltage controlled oscillator; the resonant circuit 100 is used to generate an oscillating signal of the voltage controlled oscillator; and the resonant circuit 100 is an inductor and a capacitor.
  • the capacitor uses a MOS capacitive tube to increase the tuning range of the circuit;
  • the negative resistance circuit 200 is configured to generate a negative resistance to cancel the positive resistance generated by the resonant circuit 100;
  • the feedback circuit 400 is used to The oscillating signal generated by the resonant circuit 100 is fed back to the current source circuit 300, thereby injecting a new current into the current source circuit 300, thereby improving the efficiency of use of the voltage controlled oscillator.
  • the current source current uses the first MOS transistor and the second MOS transistor, and the voltage controlled oscillator of the embodiment of the present invention has a larger output voltage because the first MOS transistor and the second MOS transistor have smaller threshold voltages. Amplitude. The greater the output voltage amplitude of the voltage controlled oscillator, the better its phase noise performance.
  • FIG. 6 is a schematic diagram of Embodiment 5 of a low noise voltage controlled oscillator according to the present invention.
  • the voltage controlled oscillator provided in this embodiment includes: a resonant circuit, a negative resistance circuit, a current source circuit, and a feedback circuit;
  • the resonant circuit includes: a differential inductor L0, a first MOS capacitive reactance tube Cl, a second MOS capacitive reactance tube C2, a third capacitor C3, a fourth capacitor C4, a first resistor R1, and a second resistor R2;
  • the tap of the differential inductor L0 is connected to the power supply.
  • One end of the differential inductor L0 is connected to the first node A, and the other end is connected to the second node B;
  • the gate of the first MOS capacitive reactance tube is connected to the third node C, and the drain and the source are short-circuited together to connect the first control voltage ATUNE;
  • the gate of the second MOS capacitive reactance tube is connected to the fourth node D, and the drain and the source are short-circuited together to connect the first control voltage ATUNE;
  • the voltage controlled oscillator can adjust the operating frequency of the voltage controlled oscillator by adjusting the magnitude of the first control voltage ATUNE.
  • One end of the first resistor R1 is connected to the third node C, and the other end is grounded;
  • One end of the second resistor R2 is connected to the fourth node D, and the other end is grounded;
  • the two ends of the third capacitor C3 are respectively connected to the first node A and the third node C, and the two ends of the fourth capacitor C4 are respectively connected to the second node B and the fourth node D.
  • the first node A is a first phase contact between the resonant circuit and the negative resistance circuit, and outputs a first resonance signal
  • the second node B is a second phase contact between the resonant circuit and the negative resistance circuit, and the output is Two resonant signals.
  • C1 and C2 operate in an accumulation zone or a depletion zone.
  • the capacitances of the third capacitor C3 and the fourth capacitor C4 are at least 10 times larger than the capacitances of the first MOS capacitive reactance tube C1 and the second MOS capacitive reactance tube C2, so as to ensure the voltage controlled oscillation provided by the embodiment of the present invention.
  • the device has a wide frequency tuning range.
  • the capacitance in the resonant circuit of the embodiment of the present invention uses MOS capacitive tubes (C1 and C2).
  • the capacitance of the MOS capacitive reactance tube varies greatly with the first control voltage ATUNE, so that the voltage controlled oscillator using the MOS capacitive reactance tube has a large tuning range.
  • the negative resistance circuit includes: a first transistor bipolar transistor Q1, a second bipolar transistor Q2, a third resistor R3, a fourth resistor R4, a fifth capacitor C5, a sixth capacitor C6, and an eleventh capacitor C11;
  • the base of the first bipolar transistor Q1 is connected to the fifth node M, and the collector is connected to the first node A, and the first node A is the first contact point of the negative resistance circuit and the resonant circuit;
  • the base of the second bipolar transistor Q2 is connected to the sixth node N, the collector is connected to the second node B, and the second node B is the second contact point of the negative resistance circuit and the resonant circuit;
  • the emitter of the first bipolar transistor Q1 is connected to the emitter of the second bipolar transistor Q2, and the connected node is connected to the output end of the current source circuit as an input end of the negative resistance circuit.
  • One end of the third resistor R3 is connected to the fifth node M, and the other end is connected to the second control voltage CDC; one end of the fourth resistor R4 is connected to the sixth node N, and the other end is connected to the second control voltage CDC; one end of the fifth capacitor C5 is connected a first node A, the other end is connected to the sixth node N; one end of the sixth capacitor C6 is connected to the second node B, and the other end is connected to the fifth node M; the fifth capacitor C5 and the sixth capacitor C6
  • the main purpose is to isolate the DC signal, and at the same time assist Q1 and Q2 to achieve the negative resistance, thus compensating for the positive resistance generated by the resonant circuit.
  • Both ends of the eleventh capacitor CI 1 are respectively connected to the second control voltage CDC and ground.
  • Q1 and Q2 can be guaranteed to be in the forward working area by adjusting the size of the second control voltage CDC.
  • the current source circuit includes: a third bipolar transistor Q3, a fourth bipolar transistor Q4, a fifth resistor R5, a sixth resistor R6, a ninth capacitor C9, and a tenth capacitor C10;
  • the base of the third bipolar transistor Q3 is connected to the grounded ninth capacitor C9, the base is the input end of the first feedback signal, and the emitter of the third bipolar transistor Q3 is grounded;
  • the base of the fourth bipolar transistor Q4 is connected to the grounded tenth capacitor C10, the base is the input end of the second feedback signal, and the emitter of the fourth bipolar transistor Q4 is grounded;
  • the collector of the third bipolar transistor Q3 is connected to the collector of the fourth bipolar transistor Q4, and the node connected as the input end of the negative resistance circuit is connected to the output end of the current source circuit;
  • One end of the fifth resistor R5 is connected to the base of the third bipolar transistor Q3, and the other end is connected to the third control voltage VBIAS;
  • One end of the sixth resistor R6 is connected to the base of the fourth bipolar transistor Q4, and the other end is connected to the third control voltage VBIAS.
  • Q3 and Q4 can be placed in the forward working area by controlling the voltage of VBIAS.
  • C9 and C10 act as filters to filter out the high frequency signals generated by Q3 and Q4. It should be noted that the Q1, Q2, Q3 and Q4 may be HBT.
  • the feedback circuit includes: a seventh capacitor C7 and an eighth capacitor C8;
  • One end of the seventh capacitor C7 is connected to the first output end of the resonant circuit (the first node A), and the other end is connected to the first signal input end of the current source circuit, and the first resonant signal passes through the seventh capacitor C7 is fed back to the current source circuit, the other end of the seventh capacitor C7 is the first output terminal NOUT of the voltage controlled oscillator;
  • One end of the eighth capacitor C8 is connected to the second output end of the resonant circuit (the second node B), and the other end is connected to the second signal input end of the current source circuit, and the second resonant signal is fed back through the eighth capacitor C8.
  • the other end of the eighth capacitor C8 is the second output terminal POUT of the voltage controlled oscillator.
  • the function of the seventh capacitor C7 and the eighth capacitor C8 is mainly to block the direct current, and at the same time, the AC signal is fed back to the current source circuit to inject a new current into the current source circuit. Therefore, the oscillating signal generated by the resonant circuit is feedback-utilized, which can improve the use efficiency.
  • POUT and NOUT are the two outputs of the voltage controlled oscillator.
  • the oscillating signals output by these two outputs are positive voltage signals, but the phases of the oscillating signals output by POUT and NOUT are opposite.
  • the capacitance values of the seventh capacitor C7 and the eighth capacitor C8 are one tenth of the capacitance values of the first MOS capacitive reactance transistor C1 and the second MOS capacitive reactance transistor C2, thereby ensuring that the voltage controlled oscillator has a wide frequency tuning. range.
  • F is the empirical coefficient; is the Boltzmann constant; ⁇ is the absolute temperature; is relative to the carrier frequency ⁇ .
  • the offset frequency; V is the voltage amplitude of the resonant circuit; # is the effective resistance.
  • a current source circuit for generating a current operated by the voltage controlled oscillator
  • a resonant circuit and a negative resistance circuit are used to generate an oscillating signal
  • the oscillating signal generated by the resonant circuit and the negative resistance resistor is fed back to the base of the HBT (Q3 and Q4) in the current source circuit through the capacitors (C7 and C8) in the feedback circuit.
  • the current source circuit of the voltage controlled oscillator provided by the embodiment of the present invention has a smaller voltage drop than the current source circuit of the voltage controlled oscillator in the prior art, thereby making the embodiment of the present invention Voltage controlled oscillator with larger output Voltage amplitude.
  • the output voltage of the voltage controlled oscillator (the direct voltage of POUT and NOUT) provided by the embodiment of the invention is the base-emitter voltage drop of Q3 or Q4, thereby increasing the peak-to-peak voltage of the output of the voltage controlled oscillator and increasing the voltage. Control the phase noise performance of the oscillator.
  • the voltage-controlled oscillator uses a feedback circuit to make the base voltages of the HBTs (Q1 and Q4) have similar phases, which in turn causes the voltage of the voltage-controlled oscillator to reach a minimum in its noise-sensitive region, thereby improving the phase noise of the voltage-controlled oscillator. performance.
  • the present invention also provides a voltage controlled oscillator.
  • a circuit diagram of a sixth embodiment of a low noise voltage controlled oscillator provided by the present invention is shown.
  • the resonant circuit includes: a differential inductor L0, a first reverse diode Cl, a second reverse diode C2, a third capacitor C3, a fourth capacitor C4, a first resistor R1, and a second resistor R2;
  • the tap of the differential inductor L0 is connected to the power supply.
  • One end of the differential inductor L0 is connected to the first node A, and the other end is connected to the second node B;
  • the anode of the first reverse diode C1 is connected to the third node C, and the cathode is connected to the first control voltage ATUNE;
  • the anode of the second reverse diode C2 is connected to the fourth node D, and the cathode is connected to the first control voltage ATUNE; the voltage controlled oscillator can adjust the operating frequency of the voltage controlled oscillator by adjusting the magnitude of the first control voltage ATUNE .
  • One end of the first resistor R1 is connected to the third node C, and the other end is grounded;
  • One end of the second resistor R2 is connected to the fourth node D, and the other end is grounded;
  • the two ends of the third capacitor C3 are respectively connected to the first node A and the third node C, and the two ends of the fourth capacitor C4 are respectively connected to the second node B and the fourth node D.
  • the first node A is a first phase contact between the resonant circuit and the negative resistance circuit, and outputs a first resonance signal
  • the second node B is a second phase contact between the resonant circuit and the negative resistance circuit, and the output is Two resonant signals.
  • C1 and C2 work in the reverse working area.
  • the capacitances of the third capacitor C3 and the fourth capacitor C4 are at least 10 times larger than the capacitances of the first reverse diode C1 and the second reverse diode C2, so that the voltage controlled oscillator provided by the embodiment of the present invention can be ensured. Wide frequency tuning range.
  • the capacitors in the resonant circuit of the embodiment of the present invention employ reverse diodes (C1 and C2). Since the reverse diode operates in the reverse working region, the capacitance of the reverse diode is smaller with respect to the MOS capacitive reactance tube, and the magnitude of the capacitance varies with the first control voltage ATUNE, so that the voltage controlled oscillator using the reverse diode has Small gain, so it has better phase noise.
  • the present invention also provides a voltage controlled oscillator, see Fig. 8, which is a circuit diagram of a seventh embodiment of the low noise voltage controlled oscillator provided by the present invention.
  • the present invention also provides a voltage controlled oscillator, see Fig. 9, which is a circuit diagram of an eighth embodiment of the low noise voltage controlled oscillator provided by the present invention.
  • FIG. 9 is the same as the current source portion of FIGS. 4 and 5, and the other modules except the current source circuit in FIG. 9 are identical to those of FIG. 6, and therefore, no further details are provided herein.

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Abstract

一种具有低噪声和大调谐范围压控振荡器，其中，电流源电路用于产生压控振荡器工作的电流；谐振电路用于产生压控振荡器的振荡信号；所述谐振电路为电感电容式谐振电路，其中的电容采用MOS容抗管或反向二极管，增加电路的调谐范围；负阻电路用于产生负阻，以抵消所述谐振电路产生的正阻；所述反馈电路用于将所述谐振电路产生的振荡信号反馈给所述电流源电路，从而为电流源注入新的电流，提高压控振荡器的使用效率。从而使该压控振荡器具有更大的输出电压幅度。压控振荡器的输出电压幅度越大，其相位噪声性能便越好。

Description

一种低噪声压控振荡器
本申请要求于 2012 年 09 月 21 日提交中国专利局、 申请号为 201210360991.5、 发明名称为"一种具有低噪声和大调谐范围的压控振荡器"； 申请号为 201210357276.6、 发明名称为 "一种低噪声压控振荡器"； 申请号为 201210360745.X , 发明名称为 "一种集成低噪声压控振荡器"； 申请号为 201210357240.8、 发明名称为 "一种低噪声压控振荡器" 的中国专利申请的优 先权， 其全部内容通过引用结合在本申请中。
技术领域
本发明涉及集成电路技术领域， 特别涉及一种低噪声压控振荡器。
背景技术
压控振荡器 (VCO, voltage-controlled oscillator)是指输出频率与输入控制电 压有对应关系的振荡电路。
压控振荡器是集成电路中非常重要的基本电路之一，其电路的实现方式主 要有两种， 分别是环形压控振荡器（Ring VCO )和电感电容压控振荡器（LC VCO )。 压控振荡器被广泛地应用于微处理器中的时钟同步 （ Clock Synchronization ) 电路； 无线通信收发器中的频率综合器 （ Frequency Synthesizer ); 光纤通信中的时钟恢复电路（ CRC, Clock Recovery Circuit ) 以 及多相位采样（ Multi-phase Sampling ) 电路中。
相位噪声是衡量压控振荡器性能的主要参数之一。 大多数情况下，压控振 荡器的相位噪声性能是影响集成接收机灵敏度的最主要因素。理想的压控振荡 器输出的信号频谱是一个脉沖函数，但是由于实际电路中存在各种噪声源，压 控振荡器输出的信号频谱特性都是频罩曲线。
压控振荡器电路中的噪声源可以分为两大类： 器件噪声和外界干扰噪声， 前者主要包括热噪声和闪烁噪声； 后者主要包括村底和电源噪声。压控振荡器 的器件噪声主要来源于片上电感和可变电容的串联寄生电阻、开关差分对管和 尾电流源。
发明内容 本发明要解决的技术问题是提供一种低噪声压控振荡器，具有较大的输出 电压幅度， 能够降低整个电路的相位噪声， 提高相位噪声性能。 本发明提供一种低噪声压控振荡器， 包括： 谐振电路、 负阻电路、 电流源 电路和反馈电路；
所述谐振电路， 用于产生压控振荡器的振荡信号， 所述谐振电路为电感电 容式谐振电路， 其中的电容采用 MOS容抗管或采用反向二极管；
所述负阻电路， 用于产生负阻， 以抵消所述谐振电路产生的正阻； 所述电流源电路， 用于产生压控振荡器工作的电流；
所述反馈电路，用于将所述谐振电路产生的振荡信号反馈给所述电流源电 路。
优选地， 所述电流源电路中的电流提供主器件为 MOS管或者三极管； 当所述电流源电路中的电流提供主器件为 MOS管时， 所述电流源电路包 括： 第一 MOS管、 第二 MOS管、 第五电阻、 第六电阻、 第九电容和第十电 谷，
所述第一 MOS管的栅极连接接地的第九电容， 所述栅极为反馈电路的第 一反馈信号的输入端， 第一 MOS管的源极接地；
所述第二 MOS管的栅极连接接地的第十电容， 所述栅极为反馈电路的第 二反馈信号的输入端， 第二 MOS管的源极接地；
所述第一 MOS管的漏极与所述第二 MOS管的漏极相接， 相接的节点作 为负阻电路的输入端与电流源电路的输出端相接点；
所述第五电阻的一端连接所述第一 MOS管的栅极， 另一端连接第三控制 电压；
所述第六电阻的一端连接所述第二 MOS管的栅极， 另一端连接第三控制 电压；
当所述电流源电路中的电流提供主器件为三极管时， 所述电流源电路包 括： 第三双极型晶体管、 第四双极型晶体管、 第五电阻、 第六电阻、 第九电容 和第十电容；
所述第三双极型晶体管的基极连接接地的第九电容，所述基极为第一反馈 信号的输入端， 第三双极型晶体管的发射极接地；
所述第四双极型晶体管的基极连接接地的第十电容，所述基极为第二反馈 信号的输入端， 第四双极型晶体管的发射极接地； 所述第三双极型晶体管的集电极与所述第四双极型晶体管的集电极相接， 相接的节点作为负阻电路的输入端与电流源电路的输出端相接点；
所述第五电阻的一端连接所述第三双极型晶体管的基极，另一端连接第三 控制电压；
所述第六电阻的一端连接所述第四双极型晶体管的基极，另一端连接第三 控制电压。
优选地， 当所述谐振电路中的电容采用 MOS容抗管时，
所述谐振电路包括： 差分电感、 第一 MOS容抗管、 第二 MOS容抗管、 第三电容、 第四电容、 第一电阻和第二电阻；
所述差分电感的一端连接第一节点， 另一端连接第二节点；
所述第一 MOS容抗管的栅极连接第三节点， 漏极和源极短接在一起连接 第一控制电压；
所述第二 MOS容抗管的栅极连接第四节点， 漏极和源极短接在一起连接 所述第一控制电压；
所述第一电阻的一端连接所述第三节点， 另一端接地；
所述第二电阻的一端连接所述第四节点， 另一端接地；
所述第三电容的两端分别连接所述第一节点和所述第三节点，所述第四电 容的两端分别连接所述第二节点和所述第四节点；
所述第一节点为所述谐振电路与负阻电路的第一相接点，输出第一谐振信 号， 所述第二节点为所述谐振电路与负阻电路的第二相接点，输出第二谐振信 号；
当所述谐振电路中的电容采用反向二极管时，
所述谐振电路包括： 差分电感、 第一反向二极管、 第二反向二极管、 第三 电容、 第四电容、 第一电阻和第二电阻；
所述差分电感的一端连接第一节点， 另一端连接第二节点；
所述第一反向二极管的阳极连接第三节点， 阴极连接第一控制电压； 所述第二反向二极管的阳极连接第四节点， 阴极连接所述第一控制电压； 所述第一电阻的一端连接所述第三节点， 另一端接地；
所述第二电阻的一端连接所述第四节点， 另一端接地； 所述第三电容的两端分别连接所述第一节点和所述第三节点，所述第四电 容的两端分别连接所述第二节点和所述第四节点；
所述第一节点为所述谐振电路与负阻电路的第一相接点，输出第一谐振信 号， 所述第二节点为所述谐振电路与负阻电路的第二相接点，输出第二谐振信 号。
优选地， 所述负阻电路包括： 第一双极型晶体管、 第二双极型晶体管、 第 三电阻、 第四电阻、 第五电容、 第六电容和第十一电容；
第一双极型晶体管的基极连接第五节点， 集电极连接第一节点， 所述第一 节点为所述负阻电路与谐振电路的第一相接点；
第二双极型晶体管的基极连接第六节点， 集电极连接第二节点， 所述第二 节点为所述负阻电路与谐振电路的第二相接点；
所述第一双极型晶体管的发射极与所述第二双极性晶体管的发射极相接， 相接的节点作为所述负阻电路的输入端与电流源电路的输出端相接点；
第三电阻的一端连接所述第五节点， 另一端连接第二控制电压； 第四电阻的一端连接所述第六节点， 另一端连接所述第二控制电压； 第五电容的一端连接所述第一节点， 另一端连接所述第六节点； 第六电容的一端连接所述第二节点， 另一端连接所述第五节点； 第十一电容的两端分别连接所述第二控制电压和地。
优选地,
所述反馈电路包括： 第七电容和第八电容；
所述第七电容的一端连接谐振电路的第一输出端，另一端连接电流源电路 的第一信号输入端， 第一谐振信号通过所述第七电容反馈至电流源电路， 所述 第七电容的另一端为压控振荡器的第一输出端；
所述第八电容的一端连接谐振电路的第二输出端，另一端连接电流源电路 的第二信号输入端， 第二谐振信号通过所述第八电容反馈至电流源电路， 所述 第八电容的另一端为压控振荡器的第二输出端。
优选地，所述第三电容和第四电容的容值比第一 MOS容抗管和第二 MOS 容抗管的容值至少大 10倍。
优选地， 所述第一 MOS容抗管和第二 MOS容抗管工作于积累区或耗尽 区。
优选地， 所述第一双极型晶体管和第二双极型晶体管处于正向工作区。 优选地， 所述第三双极型晶体管和第四双极型晶体管处于正向工作区。 优选地， 所述第一反向二极管和第二反向二极管工作于反向工作区。
优选地， 所述第一 MOS管和第二 MOS管处于饱和区。
与现有技术相比， 本发明具有以下优点：
本发明提供的具有低噪声和大调谐范围压控振荡器中， 电流源电路用于产 生压控振荡器工作的电流； 谐振电路用于产生压控振荡器的振荡信号； 所述谐 振电路为电感电容式谐振电路， 其中的电容采用 MOS容抗管， 增加电路的调 谐范围； 负阻电路用于产生负阻， 以抵消所述谐振电路产生的正阻； 所述反馈 电路用于将所述谐振电路产生的振荡信号反馈给所述电流源电路，从而为电流 源注入新的电流，提高压控振荡器的使用效率。从而使本发明实施例的压控振 荡器具有更大的输出电压幅度。压控振荡器的输出电压幅度越大， 其相位噪声 性能便越好。
附图说明 图 1是现有技术中的一种压控振荡器示意图；
图 2是本发明提供的低噪声压控振荡器实施例一的示意图；
图 3是本发明提供的低噪声压控振荡器实施例二的示意图；
图 4是本发明提供的低噪声压控振荡器实施例三的示意图；
图 5是本发明提供的低噪声压控振荡器实施例四的示意图；
图 6是本发明提供的低噪声压控振荡器实施例五的示意图
图 7是本发明提供的低噪声压控振荡器实施例六的电路图；
图 8是本发明提供的低噪声压控振荡器实施例七的电路图；
图 9是本发明提供的低噪声压控振荡器实施例八的电路图。
具体实施方式 为使本发明的上述目的、 特征和优点能够更加明显易懂， 下面结合附图对 本发明的具体实施方式做详细的说明。
参见图 2, 该图为本发明提供的低噪声压控振荡器实施例一的示意图。 本实施例提供的低噪声压控振荡器， 包括： 谐振电路 100、 负阻电路 200、 电流源电路 300和反馈电路 400:
所述谐振电路 100, 用于产生压控振荡器的振荡信号， 所述谐振电路 100 为电感电容式谐振电路， 其中的电容采用 MOS容抗管；
所述负阻电路 200,用于产生负阻，以抵消所述谐振电路 100产生的正阻； 所述电流源电路 300, 用于产生压控振荡器工作的电流；
所述反馈电路 400, 用于将所述谐振电路 100产生的振荡信号反馈给所述 电流源电路 300。
本发明提供的低噪声压控振荡器中， 电流源电路 300用于产生压控振荡器 工作的电流； 谐振电路 100 用于产生压控振荡器的振荡信号； 所述谐振电路 100为电感电容式谐振电路， 其中的电容采用 MOS容抗管， 增加电路的调谐 范围； 负阻电路 200用于产生负阻， 以抵消所述谐振电路 100产生的正阻； 所 述反馈电路 400用于将所述谐振电路 100产生的振荡信号反馈给所述电流源电 路 300, 从而为电流源电路 300注入新的电流， 提高压控振荡器的使用效率。 从而使本发明实施例的压控振荡器具有更大的输出电压幅度。压控振荡器的输 出电压幅度越大， 其相位噪声性能便越好。
图 2所示的实施例中的谐振电路 100中的电容采用的是 MOS容抗管， 下 面介绍谐振电路中的电容采用反向二极管的实施例。
参见图 3 , 该图为本发明提供的低噪声压控振荡器实施例二的示意图。 本实施例提供的低噪声压控振荡器， 包括： 谐振电路 100、 负阻电路 200、 电流源电路 300和反馈电路 400:
所述谐振电路 100, 用于产生压控振荡器的振荡信号， 所述谐振电路 100 为电感电容式谐振电路， 其中的电容采用反向二极管；
所述负阻电路 200,用于产生负阻，以抵消所述谐振电路 100产生的正阻； 所述电流源电路 300, 用于产生压控振荡器工作的电流；
所述反馈电路 400, 用于将所述谐振电路 100产生的振荡信号反馈给所述 电流源电路 300。
本发明提供的低噪声压控振荡器中， 电流源电路 300用于产生压控振荡器 工作的电流； 谐振电路 100 用于产生压控振荡器的振荡信号； 所述谐振电路 100为电感电容式谐振电路， 其中的电容采用反向二极管； 负阻电路 200用于 产生负阻， 以抵消所述谐振电路 100产生的正阻； 所述反馈电路 400用于将所 述谐振电路 100产生的振荡信号反馈给所述电流源电路 300, 从而为电流源电 路 300注入新的电流，提高压控振荡器的使用效率。从而使本发明实施例的压 控振荡器具有更大的输出电压幅度。压控振荡器的输出电压幅度越大， 其相位 噪声性能便越好。
以上实施例介绍的是谐振电路的两种实现方式，下面结合附图详细介绍电 流源电路的两种实现方式。
参见图 4, 该图为本发明提供的低噪声压控振荡器实施例三的示意图。 本发明实施例提供一种低噪声压控振荡器， 包括： 谐振电路 100、 负阻电 路 200、 电流源电路 300和反馈电路 400;
所述谐振电路 100, 用于产生压控振荡器的振荡信号， 所述谐振电路 100 为电感电容式谐振电路， 其中的电容采用反向二极管；
所述负阻电路 200,用于产生负阻，以抵消所述谐振电路 100产生的正阻； 所述反馈电路 400, 用于将所述谐振电路 100产生的振荡信号反馈给所述 电流源电路 300;
所述电流源电路 300, 用于产生压控振荡器工作的电流； 具体包括： 第一 MOS管 Ml、 第二 MOS管 M2、 第五电阻 R5、 第六电阻 R6、 第九电容 C9和 第十电容 C10;
所述第一 MOS管 Ml的栅极连接接地的第九电容 C9,所述栅极为反馈电 路 400的第一反馈信号的输入端， 第一 MOS管 Ml的源极接地；
所述第二 MOS管 M2的栅极连接接地的第十电容 C10, 所述栅极为反馈 电路 400的第二反馈信号的输入端， 第二 MOS管 M2的源极接地；
所述第一 MOS管 Ml的漏极与所述第二 MOS管 M2的漏极相接，相接的 节点作为负阻电路 200的输入端与电流源电路 300的输出端相接点；
所述第五电阻 R5的一端连接所述第一 MOS管 Ml的栅极， 另一端连接 第三控制电压 VBIAS;
所述第六电阻 R6的一端连接所述第二 MOS管 M2的栅极， 另一端连接 第三控制电压 VBIAS。
需要说明的是， 可以通过控制第三控制电压 VBIAS的电压大小来使 Ml 和 M2处于饱和区。
需要说明的是， C9和 C10起滤波作用， 滤除 Q3和 Q4产生的高频信号。 本发明提供的低噪声压控振荡器中， 电流源电路 300用于产生压控振荡器 工作的电流； 谐振电路 100 用于产生压控振荡器的振荡信号； 所述谐振电路 100为电感电容式谐振电路， 其中的电容采用反向二极管； 负阻电路 200用于 产生负阻， 以抵消所述谐振电路 100产生的正阻； 所述反馈电路 400用于将所 述谐振电路 100产生的振荡信号反馈给所述电流源电路 300, 从而为电流源电 路 300注入新的电流， 提高压控振荡器的使用效率。 并且， 电流源电流采用第 一 MOS管和第二 MOS管， 由于第一 MOS管和第二 MOS管具有较小的阈值 电压， 因此使本发明实施例的压控振荡器具有更大的输出电压幅度。压控振荡 器的输出电压幅度越大， 其相位噪声性能便越好。
参见图 5, 该图为本发明提供的低噪声压控振荡器实施例四的示意图。 图 5与图 4的区别是， 谐振电路 100中的电容采用 MOS容抗管。
本发明提供的低噪声压控振荡器中， 电流源电路 300用于产生压控振荡器 工作的电流； 谐振电路 100 用于产生压控振荡器的振荡信号； 所述谐振电路 100为电感电容式谐振电路， 其中的电容采用 MOS容抗管， 增加电路的调谐 范围； 负阻电路 200用于产生负阻， 以氐消所述谐振电路 100产生的正阻； 所 述反馈电路 400用于将所述谐振电路 100产生的振荡信号反馈给所述电流源电 路 300, 从而为电流源电路 300注入新的电流， 提高压控振荡器的使用效率。 并且， 电流源电流采用第一 MOS管和第二 MOS管， 由于第一 MOS管和第二 MOS 管具有较小的阈值电压， 因此使本发明实施例的压控振荡器具有更大的 输出电压幅度。 压控振荡器的输出电压幅度越大， 其相位噪声性能便越好。
下面结合附图介绍本发明实施例提供的压控振荡器的具体结构。
参见图 6, 该图为本发明提供的低噪声压控振荡器实施例五的示意图。 本实施例提供的压控振荡器， 包括： 谐振电路、 负阻电路、 电流源电路和 反馈电路；
所述谐振电路包括： 差分电感 L0、 第一 MOS容抗管 Cl、 第二 MOS容抗 管 C2、 第三电容 C3、 第四电容 C4、 第一电阻 Rl、 第二电阻 R2;
差分电感 L0的抽头连接电源。 所述差分电感 L0的一端连接第一节点 A, 另一端连接第二节点 B;
所述第一 M0S容抗管的栅极连接第三节点 C, 漏极和源极短接在一起连 接第一控制电压 ATUNE;
所述第二 M0S容抗管的栅极连接第四节点 D, 漏极和源极短接在一起连 接所述第一控制电压 ATUNE;
该压控振荡器可以通过调节第一控制电压 ATUNE的大小来调节压控振荡 器的工作频率。
所述第一电阻 R1的一端连接所述第三节点 C, 另一端接地；
所述第二电阻 R2的一端连接所述第四节点 D, 另一端接地；
所述第三电容 C3的两端分别连接所述第一节点 A和第三节点 C, 所述第 四电容 C4的两端分别连接所述第二节点 B和第四节点 D。
所述第一节点 A为所述谐振电路与负阻电路的第一相接点， 输出第一谐 振信号， 所述第二节点 B 为所述谐振电路与负阻电路的第二相接点， 输出第 二谐振信号。
需要说明的是， C1和 C2工作于积累区或耗尽区。
所述第三电容 C3和第四电容 C4的容值比第一 MOS容抗管 C1和第二 MOS容抗管 C2的容值至少大 10倍， 这样可以保证本发明实施例提供的压控 振荡器具有较宽的频率调谐范围。
需要说明的是， 本发明实施例的谐振电路中的电容采用 MOS容抗管（C1 和 C2 )。 MOS容抗管的容值大小随第一控制电压 ATUNE的变化较大，从而采 用 MOS容抗管的压控振荡器具有较大的调谐范围。
所述负阻电路包括：第一晶体管双极型晶体管 Q1、第二双极型晶体管 Q2、 第三电阻 R3、 第四电阻 R4、 第五电容 C5、 第六电容 C6、 第十一电容 C11; 第一双极型晶体管 Q1的基极连接第五节点 M, 集电极连接第一节点 A, 所述第一节点 A为所述负阻电路与谐振电路的第一相接点；
第二双极型晶体管 Q2的基极连接第六节点 N, 集电极连接第二节点 B, 所述第二节点 B为所述负阻电路与谐振电路的第二相接点；
所述第一双极型晶体管 Q1的发射极与所述第二双极性晶体管 Q2的发射 极相接， 相接的节点作为所述负阻电路的输入端与电流源电路的输出端相接 点；
第三电阻 R3的一端连接第五节点 M, 另一端连接第二控制电压 CDC; 第四电阻 R4的一端连接第六节点 N, 另一端连接第二控制电压 CDC; 第五电容 C5的一端连接所述第一节点 A, 另一端连接所述第六节点 N; 第六电容 C6的一端连接所述第二节点 B, 另一端连接所述第五节点 M; 第五电容 C5和第六电容 C6的作用主要是为了隔离直流信号， 同时协助 Q1和 Q2实现负阻的作用， 从而补偿谐振电路产生的正阻。
第十一电容 CI 1的两端分别连接所述第二控制电压 CDC和地。
需要说明的是， 可以通过调整第二控制电压 CDC的大小保证 Q1 和 Q2 处于正向工作区。
所述电流源电路包括： 第三双极型晶体管 Q3、 第四双极型晶体管 Q4、 第 五电阻 R5、 第六电阻 R6、 第九电容 C9和第十电容 C10;
所述第三双极型晶体管 Q3 的基极连接接地的第九电容 C9, 所述基极为 第一反馈信号的输入端， 第三双极型晶体管 Q3的发射极接地；
所述第四双极型晶体管 Q4的基极连接接地的第十电容 C10, 所述基极为 第二反馈信号的输入端， 第四双极型晶体管 Q4的发射极接地；
所述第三双极型晶体管 Q3的集电极与所述第四双极型晶体管 Q4的集电 极相接， 相接的节点作为负阻电路的输入端与电流源电路的输出端相接点； 所述第五电阻 R5的一端连接所述第三双极型晶体管 Q3的基极， 另一端 连接第三控制电压 VBIAS;
所述第六电阻 R6的一端连接所述第四双极型晶体管 Q4的基极， 另一端 连接第三控制电压 VBIAS。
需要说明的是，可以通过控制 VBIAS的电压大小来使 Q3和 Q4处于正向 工作区。
需要说明的是， C9和 C10起滤波作用， 滤除 Q3和 Q4产生的高频信号。 需要说明的是， 所述 Ql、 Q2、 Q3和 Q4可以为 HBT。
所述反馈电路包括： 第七电容 C7和第八电容 C8;
所述第七电容 C7的一端连接谐振电路的第一输出端（所述第一节点 A ), 另一端连接电流源电路的第一信号输入端， 第一谐振信号通过所述第七电容 C7反馈至电流源电路，所述第七电容 C7的另一端为压控振荡器的第一输出端 NOUT;
所述第八电容 C8的一端连接谐振电路的第二输出端 （所述第二节点 B ), 另一端连接电流源电路的第二信号输入端， 第二谐振信号通过所述第八电容 C8反馈至电流源电路，所述第八电容 C8的另一端为压控振荡器的第二输出端 POUT。
第七电容 C7和第八电容 C8的作用主要是隔直， 同时将交流信号反馈给 电流源电路， 为电流源电路注入新的电流。从而对谐振电路产生的振荡信号进 行了反馈利用， 这样可以提高使用效率。
需要说明的是， POUT和 NOUT是压控振荡器的两个输出端， 这两个输 出端输出的振荡信号均是正电压的信号， 但是 POUT和 NOUT输出的振荡信 号的相位是相反的。
第七电容 C7和第八电容 C8的容值是第一 MOS容抗管 C1和第二 MOS 容抗管 C2的容值的十分之一， 从而保证该压控振荡器具有较宽的频率调谐范 围。
下面结合图 2详细说明本发明提供的压控振荡器的工作原理。
压控振
Figure imgf000013_0001
其中 F为经验系数； 为波尔兹曼常数； Γ为绝对温度； 为相对于载波 频率 ω。的偏移频率； V皿为谐振电路的电压幅度； #为有效电阻。 需要指出 的是， 相位噪声越小， 压控振荡器的相位噪声性能越好。
电流源电路用于产生压控振荡器工作的电流；
谐振电路与负阻电路用于产生振荡信号；
谐振电路与负阻电阻产生的振荡信号通过反馈电路中的电容（ C7和 C8 ) 反馈到电流源电路中 HBT ( Q3和 Q4 ) 的基极。 在相同的直流偏置条件下， 本发明实施例提供的压控振荡器的电流源电路比现有技术中压控振荡器的电 流源电路具有更小的压降，从而使本发明实施例的压控振荡器具有更大的输出 电压幅度。
由公式（1 )可知， 压控振荡器的输出电压幅度越大， 其相位噪声性能便 越好。
本发明实施例提供的压控振荡器的输出电压 （POUT和 NOUT直接的电 压） Q3或 Q4的基极-发射极的压降， 从而增加了压控振荡器输出的峰峰值电 压， 提高了压控振荡器的相位噪声性能。
压控振荡器通过反馈电路使得 HBT ( Q1和 Q4 )的基极电压具有相似的相 位， 进而使压控振荡器的电流在其噪声敏感区达到最小值，从而提高了压控振 荡器的相位噪声性能。
本发明还提供一种压控振荡器， 参见图 7, 该图为本发明提供的低噪声压 控振荡器实施例六电路图。
图 7与图 6的区别是， 谐振电路中的电容采用的^ 向二极管。
所述谐振电路包括： 差分电感 L0、 第一反向二极管 Cl、 第二反向二极管 C2、 第三电容 C3、 第四电容 C4、 第一电阻 Rl、 第二电阻 R2;
差分电感 L0的抽头连接电源。
所述差分电感 L0的一端连接第一节点 A, 另一端连接第二节点 B;
所述第一反向二极管 C1的阳极连接第三节点 C, 阴极连接第一控制电压 ATUNE;
所述第二反向二极管 C2的阳极连接第四节点 D, 阴极连接所述第一控制 电压 ATUNE; 该压控振荡器可以通过调节第一控制电压 ATUNE的大小来调 节压控振荡器的工作频率。
所述第一电阻 R1的一端连接所述第三节点 C, 另一端接地；
所述第二电阻 R2的一端连接所述第四节点 D, 另一端接地；
所述第三电容 C3的两端分别连接所述第一节点 A和第三节点 C, 所述第 四电容 C4的两端分别连接所述第二节点 B和第四节点 D。
所述第一节点 A为所述谐振电路与负阻电路的第一相接点， 输出第一谐 振信号， 所述第二节点 B 为所述谐振电路与负阻电路的第二相接点， 输出第 二谐振信号。
需要说明的是， C1和 C2工作于反向工作区。 所述第三电容 C3和第四电容 C4的容值比第一反向二极管 C1和第二反向 二极管 C2的容值至少大 10倍， 这样可以保证本发明实施例提供的压控振荡 器具有较宽的频率调谐范围。
需要说明的是， 本发明实施例的谐振电路中的电容采用反向二极管 （C1 和 C2 )。 由于反向二极管工作于反向工作区， 反向二极管的电容相对于 MOS 容抗管， 其容值大小随第一控制电压 ATUNE的变化较小， 从而采用反向二极 管的压控振荡器具有较小的增益， 因此具有较好的相位噪声。
本发明还提供一种压控振荡器， 参见图 8, 该图为本发明提供的低噪声压 控振荡器实施例七电路图。
图 8与图 4和图 5中的电流源部分是相同的， 图 8中除了电流源电路以外 的其他模块是与图 7完全相同的， 因此， 在此不再赘述。
本发明还提供一种压控振荡器， 参见图 9, 该图为本发明提供的低噪声压 控振荡器实施例八电路图。
图 9与图 4和图 5中的电流源部分是相同的， 图 9中除了电流源电路以外 的其他模块是与图 6完全相同的， 因此， 在此不再赘述。
以上所述，仅是本发明的较佳实施例而已， 并非对本发明作任何形式上的 限制。 虽然本发明已以较佳实施例揭露如上， 然而并非用以限定本发明。 任何 熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述 揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改 为等同变化的等效实施例。 因此， 凡是未脱离本发明技术方案的内容， 依据本 于本发明技术方案保护的范围内。

Claims

- 14- 权 利 要 求
1、 一种低噪声压控振荡器， 其特征在于， 包括： 谐振电路、 负阻电路、 电流源电路和反馈电路；
所述谐振电路， 用于产生压控振荡器的振荡信号， 所述谐振电路为电感电 容式谐振电路， 其中的电容采用 MOS容抗管或采用反向二极管；
所述负阻电路， 用于产生负阻， 以氐消所述谐振电路产生的正阻； 所述电流源电路， 用于产生压控振荡器工作的电流；
所述反馈电路，用于将所述谐振电路产生的振荡信号反馈给所述电流源电 路。
2、 根据权利要求 1所述的低噪声压控振荡器， 其特征在于， 所述电流源 电路中的电流提供主器件为 MOS管或者三极管；
当所述电流源电路中的电流提供主器件为 MOS管时， 所述电流源电路包 括： 第一 MOS管、 第二 MOS管、 第五电阻、 第六电阻、 第九电容和第十电 谷，
所述第一 MOS管的栅极连接接地的第九电容， 所述栅极为反馈电路的第 一反馈信号的输入端， 第一 MOS管的源极接地；
所述第二 MOS管的栅极连接接地的第十电容， 所述栅极为反馈电路的第 二反馈信号的输入端， 第二 MOS管的源极接地；
所述第一 MOS管的漏极与所述第二 MOS管的漏极相接， 相接的节点作 为负阻电路的输入端与电流源电路的输出端相接点；
所述第五电阻的一端连接所述第一 MOS管的栅极， 另一端连接第三控制 电压；
所述第六电阻的一端连接所述第二 MOS管的栅极， 另一端连接第三控制 电压；
当所述电流源电路中的电流提供主器件为三极管时， 所述电流源电路包 括： 第三双极型晶体管、 第四双极型晶体管、 第五电阻、 第六电阻、 第九电容 和第十电容；
所述第三双极型晶体管的基极连接接地的第九电容，所述基极为第一反馈 信号的输入端， 第三双极型晶体管的发射极接地； - 15- 所述第四双极型晶体管的基极连接接地的第十电容，所述基极为第二反馈 信号的输入端， 第四双极型晶体管的发射极接地；
所述第三双极型晶体管的集电极与所述第四双极型晶体管的集电极相接， 相接的节点作为负阻电路的输入端与电流源电路的输出端相接点；
所述第五电阻的一端连接所述第三双极型晶体管的基极，另一端连接第三 控制电压；
所述第六电阻的一端连接所述第四双极型晶体管的基极，另一端连接第三 控制电压。
3、 根据权利要求 1所述的低噪声压控振荡器， 其特征在于， 当所述谐振 电路中的电容采用 MOS容抗管时，
所述谐振电路包括： 差分电感、 第一 MOS容抗管、 第二 MOS容抗管、 第三电容、 第四电容、 第一电阻和第二电阻；
所述差分电感的一端连接第一节点， 另一端连接第二节点；
所述第一 MOS容抗管的栅极连接第三节点， 漏极和源极短接在一起连接 第一控制电压；
所述第二 MOS容抗管的栅极连接第四节点， 漏极和源极短接在一起连接 所述第一控制电压；
所述第一电阻的一端连接所述第三节点， 另一端接地；
所述第二电阻的一端连接所述第四节点， 另一端接地；
所述第三电容的两端分别连接所述第一节点和所述第三节点，所述第四电 容的两端分别连接所述第二节点和所述第四节点；
所述第一节点为所述谐振电路与负阻电路的第一相接点，输出第一谐振信 号， 所述第二节点为所述谐振电路与负阻电路的第二相接点，输出第二谐振信 号；
当所述谐振电路中的电容采用反向二极管时，
所述谐振电路包括： 差分电感、 第一反向二极管、 第二反向二极管、 第三 电容、 第四电容、 第一电阻和第二电阻；
所述差分电感的一端连接第一节点， 另一端连接第二节点；
所述第一反向二极管的阳极连接第三节点， 阴极连接第一控制电压； - 16- 所述第二反向二极管的阳极连接第四节点， 阴极连接所述第一控制电压； 所述第一电阻的一端连接所述第三节点， 另一端接地；
所述第二电阻的一端连接所述第四节点， 另一端接地；
所述第三电容的两端分别连接所述第一节点和所述第三节点，所述第四电 容的两端分别连接所述第二节点和所述第四节点；
所述第一节点为所述谐振电路与负阻电路的第一相接点，输出第一谐振信 号， 所述第二节点为所述谐振电路与负阻电路的第二相接点，输出第二谐振信 号。
4、 根据权利要求 1所述的低噪声压控振荡器， 其特征在于， 所述负阻电 路包括： 第一双极型晶体管、 第二双极型晶体管、 第三电阻、 第四电阻、 第五 电容、 第六电容和第十一电容；
第一双极型晶体管的基极连接第五节点， 集电极连接第一节点， 所述第一 节点为所述负阻电路与谐振电路的第一相接点；
第二双极型晶体管的基极连接第六节点， 集电极连接第二节点， 所述第二 节点为所述负阻电路与谐振电路的第二相接点；
所述第一双极型晶体管的发射极与所述第二双极性晶体管的发射极相接， 相接的节点作为所述负阻电路的输入端与电流源电路的输出端相接点；
第三电阻的一端连接所述第五节点， 另一端连接第二控制电压； 第四电阻的一端连接所述第六节点， 另一端连接所述第二控制电压； 第五电容的一端连接所述第一节点， 另一端连接所述第六节点； 第六电容的一端连接所述第二节点， 另一端连接所述第五节点； 第十一电容的两端分别连接所述第二控制电压和地。
5、 根据权利要求 1所述的低噪声压控振荡器， 其特征在于，
所述反馈电路包括： 第七电容和第八电容；
所述第七电容的一端连接谐振电路的第一输出端，另一端连接电流源电路 的第一信号输入端， 第一谐振信号通过所述第七电容反馈至电流源电路， 所述 第七电容的另一端为压控振荡器的第一输出端；
所述第八电容的一端连接谐振电路的第二输出端，另一端连接电流源电路 的第二信号输入端， 第二谐振信号通过所述第八电容反馈至电流源电路， 所述 - 17- 第八电容的另一端为压控振荡器的第二输出端。
6、 根据权利要求 3所述的低噪声压控振荡器， 其特征在于， 所述第三电 容和第四电容的容值比第一 MOS容抗管和第二 MOS容抗管的容值至少大 10 倍。
7、 根据权利要求 3 所述的低噪声压控振荡器， 其特征在于， 所述第一
MOS容抗管和第二 MOS容抗管工作于积累区或耗尽区。
8、 根据权利要求 4所述的低噪声压控振荡器， 其特征在于， 所述第一双 极型晶体管和第二双极型晶体管处于正向工作区。
9、 根据权利要求 2所述的低噪声压控振荡器， 其特征在于， 所述第三双 极型晶体管和第四双极型晶体管处于正向工作区。
10、 根据权利要求 3所述的集成低噪声压控振荡器， 其特征在于， 所述第 一反向二极管和第二反向二极管工作于反向工作区。
11、 根据权利要求 2所述的集成低噪声压控振荡器， 其特征在于， 所述第 一 MOS管和第二 MOS管处于饱和区。
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