WO2014043634A1 - Analyseur de champ énergétique putatif à effet tunnel électronique - Google Patents

Analyseur de champ énergétique putatif à effet tunnel électronique Download PDF

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Publication number
WO2014043634A1
WO2014043634A1 PCT/US2013/059968 US2013059968W WO2014043634A1 WO 2014043634 A1 WO2014043634 A1 WO 2014043634A1 US 2013059968 W US2013059968 W US 2013059968W WO 2014043634 A1 WO2014043634 A1 WO 2014043634A1
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Prior art keywords
vital
frequency
schottky diode
waves
substrate
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PCT/US2013/059968
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English (en)
Inventor
Bryon K. ECKERT
Bradley N. Eckert
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Auraprobe, Inc.
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Priority claimed from US13/619,821 external-priority patent/US20130253302A1/en
Application filed by Auraprobe, Inc. filed Critical Auraprobe, Inc.
Publication of WO2014043634A1 publication Critical patent/WO2014043634A1/fr

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/05—Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves 
    • A61B5/053—Measuring electrical impedance or conductance of a portion of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Definitions

  • This invention relates to pattern analysis. This invention relates particularly to methods and devices for detecting and analyzing energy fields emitted by
  • vital fields All live organisms emit energy fields, referred to herein as vital fields, which are characterized by the organic processes that produce or modify them. There is a significant amount of skepticism surrounding vital fields because no known scientific instruments can directly detect them. The inability to detect, measure, and describe the energy in a vital field is a problem that inhibits human understanding of biological interactions with the environment.
  • the vital field comprises longitudinal electromagnetic waves. These are periodic variations in time density somewhat like sound waves in air, extending into the millimeter wave range. The wavelength and time-varying component of the vital waves make them very difficult to detect and analyze.
  • GDV gas discharge visualization
  • GDV equipment which is itself a variation of Kirlian high-voltage photography equipment, or low voltage electric field sensors.
  • One device used to detect pathogens in an organism, places the organism in an electrical field and detects an aura signature of pathogens energized by the field.
  • Another device uses a passive detector that characterizes pulses of charge transfer called charge density pulses through conductive plates placed near the palms of the hands.
  • the decay envelope of the detected pulse train may provide information useful for analysis of the body's chakra regions.
  • the data is extracted from a pulse train that does not achieve a steady state, and so the data that can be obtained is limited.
  • Some detectors such as electrocardiographs and electroencephalographs, analyze alternating current waveforms detected by electrodes placed on the skin of the test subject.
  • One known device uses contacts on the palms and fingers to detect the physiological signals of the human body supposedly associated with auras.
  • detectors introduce an electric current into the electrodes, such as with a galvanic skin response and others, which measure the organism's interaction with the introduced current through physical contact between the organism and the detector.
  • Still other devices use capacitance to measure the interaction, but must be placed extremely close to the organism to be effective. Contact and capacitance based devices suffer significant problems with artifacts caused by the proximity.
  • SQUID Superconducting Quantum Interference device
  • SQUIDS are highly sensitive, extremely expensive magnetometers. However, SQUIDS only detect the presence of strong waves. A typical vital field generated by an organism has weak vital waves that SQUIDS cannot detect. Further, SQUIDS do not detect the spectral information needed analyze a vital field. A reliable, understandable, and useful detection device and method is needed. Therefore, it is an object of the present invention to reliably detect and analyze vital fields. 1 1 is a further object that the vital fields be detected with a device that is relatively inexpensive compared to known devices. It is another object of the invention that the device and method of detection reduces unwanted artifacts by not contacting the organism.
  • Quantum tunneling occurs because the particle behavior, as modeled by the Schrodinger wave function for a particle traveling in a medium, cannot be discontinuous at the boundary of the medium.
  • the boundary which may be a physical barrier or a barrier formed by a difference in electrical potential
  • the wave is split into a reflected component and an evanescent component, a phenomenon known as evanescent wave coupling.
  • the reflected wave reflects off of the barrier with a higher energy than the wave had when it encountered the barrier.
  • the evanescent wave propagates, or tunnels, through the barrier and then exhibits exponential decay over distance traveled. In this manner, electrons, photons, and other particles cross a barrier even though they may not have the energy needed to do so.
  • the inventive device utilizes the principles of quantum tunneling to detect and analyze the vital fields as described below.
  • the present device is placed in a vital field such that the vital waves in the vital field are conducted into a detector having a Schottky diode and an electrical pulse generator.
  • the Schottky diode includes a tunneling barrier and two or more electrodes having high sheet resistivity.
  • the Schottky diode is forward DC biased with a current source, and receives a pulsed alternating current from the pulse generator, which may be a step recovery diode or a bipolar junction transistor, preferably operated in its avalanche breakdown region.
  • the vital waves impinge the Schottky diode without electrical contact, traveling through the electrodes of high sheet resistivity and into the tunnel barrier.
  • the vital waves are preferably conducted into the active region of the Schottky diode through a focusing horn.
  • Control circuitry provides a first control signal at a first sampling frequency to the detector.
  • the first control signal is chosen to undersample the vital waves from the vital field, which may have very high frequency.
  • the first control signal modulates the tunnel current, which is the portion of the current that passes through the tunneling barrier.
  • the first control signal instructs the pulse generator to apply a narrow current pulse to the Schottky diode.
  • the pulsing current "pumps" the
  • the Schottky diode similar to a sampling mixer or sampling phase detector, to create a period of peak tunnel current.
  • the vital waves from the vital field cause a detectable interference with the tunnel current, producing a first mixed signal including a first beat frequency that is the difference between the frequency of the vital waves and a high harmonic of the first sampling frequency.
  • the first mixed signal is conducted to signal processing circuitry, which filters the signal and applies Fourier transforms. Extraction of the beat frequency from the first mixed signal indicates that the vital waves are present. Then, the control circuitry is adjusted to produce a second control signal and the detection process repeats, producing a second mixed signal with a second beat frequency.
  • the signal processing circuitry uses the first and second beat frequencies to determine the frequency of the vital waves from the vital field. The results of the signal processing are then displayed on a screen. Both the control circuitry and the signal processing circuitry include components that work to limit noise and other artifacts generated during the detection process.
  • a reference database is developed to associate vital fields with the organisms, organs, organic material, metaphysical changes, or conditions presumed to generate the vital fields.
  • Fig. 1 is a schematic diagram of the present device.
  • Fig. 2 is a cross-sectional side view diagram of the preferred Schottky diode.
  • Fig. 3 is a circuit diagram of the preferred embodiment of the present device.
  • FIG. 1 illustrates the present invention, which is a device 10 for detecting and analyzing vital fields.
  • the device 10 is placed in the path of vital waves 19 that are present in the vital field to be detected.
  • the detection process is initiated through a user interface 4, such as by pressing a button or a designated part of a touch screen that indicates to control circuitry 11 that the process should begin.
  • the control circuitry 11 then generates, as described in detail below, a first control signal having a first sampling frequency, and sends the first control signal to a detector 12.
  • the control circuitry 11 may also send the first control signal to signal processing circuitry 13 for use in a frequency converter as described below.
  • the detector 12 may be substantially enclosed by electromagnetic shielding 15.
  • the shielding 15 protects the internal components of the detector 12 from unwanted interference by light and other electromagnetic waves.
  • the shielding 15 may be a Faraday cage or other shielding structure.
  • the shielding 15 may be a mesh of conducting material, but preferably the shielding 15 is substantially solid and fully encloses the detector's 12 internal components, except that a small opening may be left in the shielding to allow the vital waves 9 to pass into the detector 12.
  • This opening may be covered by an opaque dielectric material (not shown) that blocks light but allows the vital waves 19 to pass.
  • the dielectric material may be any electrical insulator, including insulating tape such as vinyl, plastic, or polyester tape. Preferably, however, the opening is not covered to avoid interference of the covering with the vital waves.
  • the internal components of the detector 12 may include a Schottky diode 16 configured to facilitate quantum tunneling and an alternating current pulse generator 17 that cooperate to control the parameters of a tunnel current in the diode 16.
  • the diode 16 is forward biased and receives a constant direct current from a current source, producing an average tunnel current across a dielectric barrier in the diode
  • the average tunnel current is preferably between about 3 mA and about 30 mA, most preferably about 15 mA.
  • the pulse generator 17 is electrically connected to the diode 16 to provide a pulsed alternating current to the diode 16. The pulsed current augments the constant current to drive a peak tunnel current in which the presence of vital waves 19 is detectable.
  • the detector 12 may further comprise a focusing horn 18 through which the vital waves 19 pass and are directed into the tunneling region of the diode 16.
  • the focusing horn 18 is made of a conductive material, preferably metal, that will reflect the vital waves 19 due to their static electric component. Suitable metals include brass, copper, and aluminum, but most preferably the focusing horn 18 is brass.
  • the control circuitry 11 directs the first control signal to the pulse generator
  • the pulse generator 17 causing the pulse generator 17 to apply narrow current pulses to the diode 16 at the first sampling frequency.
  • the pulse width is about 50 picoseconds.
  • Suitable pulse generators to achieve the pulsing parameters include a step recovery diode and a bipolar transistor biased in its avalanche region.
  • the current pulse profile may be that of a sine wave.
  • the current pulses augment the constant direct current to generate the peak tunnel current.
  • the tunnel current propagates so quickly, typically within about 50 picoseconds, that the first sampling frequency is retained in the resulting signal that is emitted from the Schottky diode 16.
  • the resulting signal is called the first mixed signal, as described below.
  • the vital waves 19 have extremely high frequencies, of at least 30 gigahertz and further into the terahertz range, undersampling may be used to determine the frequency.
  • the signal propagated through the Schottky diode 16, being the product of oscillating current pulses and the non-linear capacitance versus voltage characteristic and non-linear tunnel current characteristic of the diode 16, has sufficient harmonic content that heterodyning occurs between the vital waves 19 and a high harmonic of the first sampling frequency.
  • the first mixed signal carried out of the Schottky diode 16 contains a first beat frequency that is the difference between the frequency of the vital waves 19 and a high harmonic of the first sampling frequency.
  • the first mixed signal is then processed by signal processing circuitry 13. As described below, the first mixed signal undergoes filtration, optional frequency conversion, and Fourier transformation to extract the desired frequency data. During or after this processing, the control circuitry generates a second control signal having a second sampling frequency and sends it to the detector 12, resulting in a second mixed signal having a second beat frequency. The second mixed signal is also processed by signal processing circuitry 13. The second beat frequency is subtracted from the first beat frequency to obtain the beat frequency shift.
  • the harmonic with which the vital waves 19 were heterodyned is determined by dividing the sampling frequency shift by the beat frequency shift.
  • the harmonic number of the first sampling frequency then allows calculation of the observed frequency imparted by the vital waves 9.
  • the detection process may be repeated with additional sampling frequencies to reduce uncertainties if multiple vital wave 19 frequencies are present.
  • the direct current may be removed from the diode 16 to determine if a detected frequency was caused by a vital wave 19 or by electromagnetic noise, such as a radio frequency, affecting the components. That is, if the direct current is removed and the signal disappears from the spectrum analysis, it is more likely that the signal was caused by a vital wave 19 than by unwanted interference.
  • the spectral data of the detection process may be formatted and displayed on a screen in the user interface 14. Further, the spectral data may be compared to records in a reference database to determine if it matches information gathered on known vital fields. In this manner, if it has been determined that certain data previously gathered by the device 10 correlates to, for example, the presence of a blood disease or its precursors, the results of the detection process may be compared to the previously collected data to determine if the scanned person has the same disease or its precursors.
  • Reference databases may be generated for specific plants and animals, and may be used to detect vital fields associated with bodily states and conditions, the presence or absence of diseases, and aspects of other body energies such as chakra or qi.
  • the reference databases may be stored on the device 10, on a computer to which the device 10 may be electrically connected such as via Universal Serial Bus cable or wireless Ethernet connection, or on a server accessible over the internet, such as in a cloud storage framework.
  • FIG. 2 is a diagram of the preferred Schottky diode 16.
  • the design of the diode 16 may conform to any parameters that facilitate a tunnel current as described below while allowing the vital waves 19 to reach the tunnel current without themselves being disrupted.
  • the diode 16 may use any suitable semiconducting material, including silicon, doped or undoped GaAs, GaN, or another compound semiconductor, as a semi-insulating substrate 61.
  • the substrate 60 is high resistivity float zone silicon.
  • the substrate 60 may be refined to atomic flatness to maximize the effectiveness and reliability of the device 10. Chemical etching or mechanical polishing processes may be used to achieve atomic flatness of the substrate 60, depending on the material used.
  • the aspect ratio of the device 10 is kept very high in order to minimize the intrinsic resistance of the device.
  • the substrate 60 measures about 200 1-1 m wide by about 1 1-1 m long. These dimensions may approach the limits of proper alignment capabilities of the fabrication device, which is preferably a lithographic device. In that case, the current transmission may be protected by shallow- or deep-trench isolation.
  • the diode 16 may include one or more oxide trenches 61 positioned to reduce the variability of the diode's 16 active area to a single critical dimension, thus increasing the fabrication repeatability of the device.
  • the oxide trench 61 may be made of any dielectric material, and is preferably silicon dioxide applied by plasma-enhanced chemical vapor deposition to avoid thermal damage to the doping regions of the substrate 60 or other components deposited thereon.
  • the diode 16 is fabricated with electrodes of similarly high sheet resistivity, which will allow the vital waves 19 to partially or fully pass through both electrodes and impinge upon the tunneling region of the diode 16.
  • a heavily-doped region 62 of the substrate 60 creates an ohmic contact to a first bonding pad 64.
  • the first bonding pad 64 is a metal contact point to which bonding wires are connected, and is preferably aluminum if the substrate 60 is silicon or gold if the substrate 60 is gallium arsenide or another compound semiconductor.
  • the heavily doped region 62 and the first bonding pad 64 are configured so they do not prevent the vital waves 19 from reaching the tunneling region of the diode 16 as described below.
  • the base electrode 63 of the diode 16 is a lightly n-doped region of the substrate 60 that abuts the heavily doped region 62 so that electrical conductivity between the first bonding pad 64, heavily doped region 62, and base electrode 63 is maintained.
  • the light doping of the base electrode 63 creates a high bulk resistivity, which permits a Schottky barrier to be formed in the diode 16 and ensures a highly nonlinear capacitance-voltage characteristic. Further, the light doping maintains a high sheet resistivity of the base electrode 63 to allow the vital waves to penetrate into the tunneling region.
  • the base electrode 63 is preferably formed by ion implantation, but may be formed by thermal diffusion or molecular beam epitaxy. If the base electrode 63 is formed by ion implantation, the oxide trenches 61 will insulate the tunnel dielectric 66 and resistive thin film 67 from the edges of the base electrode 63 where the doping may be non-uniform.
  • the doping profiles for the heavily-doped region 62 and base electrode 63 may depend on the choice of material for the substrate 60 and the degree of electron mobility desired. Preferably, the regions are n-doped in order to provide higher electron mobility than with p-doped regions.
  • the region of the silicon substrate 60 to comprise the base electrode 63 is doped with phosphorus at a nominal energy of about 100 keV and a dose of about 1 x 1 OA13 ions per cmA2 to impart the desired characteristics.
  • the substrate 60 is doped with arsenic or, if a p-doping profile is desired, with boron.
  • the base electrode 63 may be formed by molecular beam epitaxy of silicon or tin to create an n-doped profile.
  • the heavily-doped region 62 is doped with phosphorus at a dose of about 1 x 1 OA21 ions per cm A 2 in order to create the ohmic contact with the first bonding pad 64.
  • the dose is applied by thermal diffusion of a spin-on dopant such as Emulsitone Phosphorosilicafilm.
  • the tunneling region of the diode 16 contains a tunnel barrier 66 and a thin film 67.
  • the width of the tunneling region which is preferably the distance between oxide trenches 61 , is preferably about 1 pm to minimize the intrinsic resistance of the diode 16.
  • the tunnel barrier 66 is a thinly deposited dielectric material, preferably aluminum nitride (AIN), and most preferably at thickness of 1.6nm.
  • AIN aluminum nitride
  • Nitride dielectrics including silicon nitride as well as aluminum nitride, gallium nitride, and others, are preferred due to their lack of a soft electrical breakdown characteristic, which offers improved reliability of tunnel current over dielectric materials that do have this characteristic.
  • the tunnel barrier 66 is formed by Plasma Enhanced Atomic Layer Deposition ("PEALD”) in order to ensure uniform thickness at nano-scale, and further to reduce the costs related to thermal processing of the diode 16.
  • PEALD Plasma Enhanced Atomic Layer Deposition
  • the very thin tunnel barrier 66 allows the capacitance of the diode 16 to change significantly in response to applied voltage, which aids in generating a peak tunnel current.
  • the thin film 67 serves as the top electrode and therefore is metal or another conductor.
  • the thin film 67 is a 1 nm layer of titanium nitride (TiN) that is most preferably deposited using PEALD, but may be applied using any known method of thin film deposition. Titanium nitride is preferred due to its wide availability, but a suitable replacement having high sheet resistivity, such as tantalum nitride, may be used.
  • a second bonding pad 65 makes electrical contact with the thin film 67.
  • the second bonding pad 65 is a metal contact point to which bonding wires are connected, and is preferably aluminum if the substrate 60 is silicon or gold if the substrate 60 is gallium arsenide or another compound semiconductor.
  • Device passivation is realized with a layer 68 of polymeric or other passivating material.
  • the passivating layer 68 is made of Parylene about 10 microns thick at its thickest point. Other acceptable materials for the layer 68 include silicon nitride and silicon dioxide.
  • the layer 68 also covers the associated bond wires.
  • the bond wires may be protected by selectively cured UV epoxy, with any uncured epoxy being removed from the active region so that it does not block the vital waves.
  • the described diode 16 serves as a tunneling structure with very high sensitivity due to the atomic flatness of the components and the nano-scale thickness of the dielectric and thin-film electrode.
  • the diode 16 will produce normally-distributed white noise in the form of a decaying tunnel current that travels from the negatively-charged base electron 63 through the tunnel barrier 66 to the thin film 67.
  • the noise power varies proportionately with the amount of current applied.
  • the shot noise of the diode 16 will have a 1/f component that dominates the signal at frequencies below about 100kHz.
  • the diode 16 design allows vital waves 19, which are scalar electromagnetic waves, to travel through the doped and metallized regions into the tunneling region. A periodic variation in time rate density of the vital waves 9 manifests as a slight variation in tunnel current, and
  • the 1/f component may contain the signal contributed by the vital waves and is therefore analyzed as part of the mixed signal described below.
  • the tunneling region may be manufactured as a separate component from the Schottky diode 16.
  • the tunneling region essentially becomes a tunneling component comprising bottom and top thin- film electrodes separated by a tunneling barrier.
  • the dimensions of the tunneling component are the same as those described for the tunneling region, in order to maintain a high sheet resistivity of the electrodes and the sensitivity of the overall device, imparted by the nano-scale thickness and atomic flatness of the dielectric and electrodes.
  • the tunneling component Separating the tunneling component from the Schottky diode 16 allows the use of non-semiconducting materials, such as quartz, sapphire, or another crystalline material, for the substrate 60 because there is no need to dope regions of the substrate 60 for creating a Schottky contact within the tunneling component.
  • the electrodes of the tunneling component are preferably Titanium Nitride.
  • the diode 16 may be an optional component. Specifically, the tunneling component may be electrically connected to the pulse generator 17, which may be configured to apply a pulsed direct current that peaks in one direction, rather than alternating and causing bidirectional tunneling current across the tunneling component. In this configuration, the Schottky diode 16 would not be needed. Alternatively, the Schottky diode 16 may be positioned in the circuit between the pulse generator 17 and the tunneling component. In this configuration, the Schottky diode 16 prevents bidirectional current flow across the tunneling component, so the pulse generator 17 may provide alternating current as described above.
  • an off-the-shelf Schottky diode 16 may be used in the circuit. Furthermore, a wider variety of materials may be used in the tunneling component, and in the detector 12 as a whole, because the design is not limited by the requirements of a Schottky contact. The disadvantage of this embodiment over an integrated diode 16 design is that there are more wire contacts and therefore additional inductance in the circuit.
  • the overall tunnel current through the tunnel barrier 66 will be small.
  • the small geometry is necessitated by the large capacitance created by the thin tunnel barrier 66.
  • the shot noise current will be reduced at higher intermediate frequencies because this noise, and any combination thereof.
  • the preferred embodiment of the present device endeavors to minimize noise in the circuit using components that filter unwanted signals and maintain low impedance on sensitive elements.
  • the tunneling region aspect ratio is made as wide as possible to minimize the intrinsic resistance of the device 10, which will add directly to the thermal noise output from the diode 16.
  • certain desirable features of the diode 16 are affected in inverse proportion according to the capacitance and intrinsic resistance of the diode 16.
  • the rectifying effect of the Schottky barrier must be balanced against the overall series resistance of the diode 16; the former affects the efficiency of the harmonic signal mixing, while the latter affects the thermal noise produced by the device.
  • the constant current and capacitance will scale linearly with the size of the tunneling region, and the intrinsic resistance will be a function of the size and aspect ratio of the tunneling region.
  • This combination can vary with the design of the low noise amplifier that is connected to the diode 16 as described below.
  • a typical low cost silicon germanium transistor will have a low impedance noise match and be less sensitive to a relatively high capacitance, generated by the diode 6, on its input.
  • the resistivity of the base electrode 63 and thin film 67 is between about 1000 ohms/cm A 2 and 10,000 ohms/cm A 2, and most preferably about 2000 ohms/cm A 2, to achieve the optimum balance between Schottky barrier effect and series resistance.
  • a signal source When the detection process is initiated, a signal source generates the first control signal.
  • a master clock oscillator 28 supplies the master clock frequency to a frequency multiplier 55, which uses the master clock frequency to produce the first control signal at the first sampling frequency.
  • the master clock oscillator 28 preferably contains one or more digitally tuned crystal oscillators, most preferably having two crystals at frequencies of 45.2 and 46.173 MHz, respectively.
  • the master clock oscillator 28 may be a frequency synthesizer or a voltage controlled crystal oscillator controlled by a digital-to-analog converter.
  • the frequency multiplier 55 multiplies the master clock oscillator's 28 first control signal by 22 to 994.4 MHz.
  • the frequency multiplier 55 sends the first control signal into the detector 12 and to the second intermediate frequency (“IF") mixer 56.
  • IF intermediate frequency
  • the Schottky diode 16 receives the direct current from a current source 35.
  • the voltage level is controlled by an external computer processor.
  • the voltage is adjusted to give a fixed current through a bias resistor 36, producing an average tunnel current within the Schottky diode 16.
  • the pulse generator 17 receives the first control signal from the frequency multiplier 55 and provides the pulsed current to the Schottky diode 16 to drive the tunnel current bias modulation.
  • a pulse inductor 53 provides a low impedance return for the
  • the inductance of the diode 16 and associated bond wires will decrease the peak pulse voltage to the diode 16, this inductance is preferably reduced by using a pair of bond wires for each electrical connection.
  • the diode 16 must see a short circuit at high frequencies, increasing the harmonic content of the pulsed first control signal.
  • the short circuit is provided by a short-circuit lowpass filter 33, which has a cutoff frequency of half the first sampling frequency.
  • the short-circuit lowpass filter 33 receives the first mixed signal and suppresses the first sampling frequency, preventing overload of the signal processing circuitry.
  • the lowpass filter 33 further provides a low impedance return for the pulse generator 17.
  • the lowpass filter 33 is a lumped element filter.
  • a capacitor 22 blocks the diode 16 bias voltage while passing the first mixed signal down to the frequency range where the 1/f noise of the diode 16 overtakes the broadband shot noise current.
  • the first mixed signal is then delivered to a baseband AC amplifier 54, which presents a suitable terminating impedance for the short-circuit lowpass filter 33 and sets the baseband noise floor after the diode 16.
  • the first mixed signal now a baseband signal, may be routed through a frequency converter 50. This is not a necessary step, but it can provide a more practical realization by allowing a sampling frequency that is much higher than the analog-to-digital converter (“ADC") 47 sampling rate. Because most signals of interest are undersampled, doubling the sampling frequency will produce about a 3 decibel improvement in signal to noise ratio.
  • ADC analog-to-digital converter
  • the first intermediate frequency mixer 40 provides frequency conversion to a first IF by mixing the first mixed signal with a signal generated by the first local oscillator 43.
  • the first local oscillator 43 is preferably a frequency synthesizer that is in phase lock with the master clock oscillator 28 and produces a signal of 1 ⁇ 4 the master clock oscillator 28 frequency.
  • the first IF is 1005.1 MHz, which is within a suitable range to allow the use of an inexpensive in line surface acoustic wave (“SAW) filter for the first IF filter 41.
  • SAW line surface acoustic wave
  • the first IF filter 41 then provides image rejection in the down-converted signal to improve the performance of a first interstage amplifier 23, which amplifies the signal before delivering it to the second IF mixer 56.
  • the second IF mixer 56 uses the frequency provided by the frequency multiplier 55 to convert the first mixed signal to a frequency of 10.7 MHz. This allows the use of a ceramic filter as a second IF filter 57, which provides high quality noise filtering of the signal.
  • the resulting signal is amplified at 10.7 MHz by a second interstage amplifier 24.
  • a third sampling mixer 42 mixes the amplified signal with a signal from a frequency divider 27, which receives the master clock oscillator 28 signal and divides by 4 to provide a signal of 11.33 MHz . This mixing converts the first mixed signal down to a suitable range for the ADC 47 sampling rate, which is received from a divider 34 that divides the master clock oscillator 28 frequency by 16.
  • Switches 37 and 38 are used to bypass the frequency converter 50.
  • An anti- alias lowpass filter 39 provides anti-aliasing filtering of the baseband first mixed signal when the frequency converter 50 is bypassed. Because the high frequency rolloff caused by the intrinsic capacitance of the Schottky diode 16 is not a problem when the converter 50 is bypassed, less gain is needed in the system.
  • a threshold amplifier 29 is used to overcome the ADC 47 noise floor for both cases.
  • the frequency divider 27 signal With a first control signal emanating from the master clock oscillator 28 at 45.2 MHz, the frequency divider 27 signal is 1 1.3 MHz, the first sample frequency is 994.4 MHz, the ADC 47 sampling frequency is 2.825 MHz, and the baseband first mixed signal ranges from 0 to 452 MHz. With a second control signal emanating from the master clock oscillator 28 at 46.173 MHz, the frequency divider 27 signal is 11.543 MHz, the first sample frequency is 1015.8 MHz, the ADC 47 sampling frequency is 2.886 MHz, and the baseband first mixed signal ranges from 0 to 461.7 MHz. These frequencies are chosen to allow the use of low cost ceramic and SAW filters.
  • a sampling frequency at or near 1 gigahertz allows the use of smaller Fourier transforms during signal processing.
  • the smaller transforms account for both random variation in detected frequencies and frequency drift in either the master clock oscillator 28 or frequency multiplier 55.
  • Noise from the baseband AC amplifier 54 may be filtered by a second lowpass filter 21.
  • the baseband signal is digitized by the ADC 47.
  • a Fourier transform computer 48 computes a large fast Fourier transform ("FFT") to detect the desired signals, such as the first beat frequency, within the baseband signal. The detection process is repeated to acquire a second beat frequency, and the computer 48 analyzes the vital field by deriving the input frequency from the first and second beat frequencies. The FFT results are processed and displayed on the screen 49.
  • FFT fast Fourier transform
  • the frequency converter 50 may receive a continuous wave frequency reference from an antenna 30.
  • the antenna 30 is preferably tuned to the 2.4 GHz frequency range, and the converter 50 operates with the local oscillator now on the low side instead of the high side.
  • the 2.4 GHz signal is typically phase locked to a GPS disciplined OCXO, and the FFT computer can use the measured frequency error to correct timebase errors in real time to typically 0.1 ppb
  • Low noise amplifier 31 and high pass filter 32 improve the receiver sensitivity, and switch 22 provides isolation at the image frequency when the converter is using the low band input.

Abstract

L'invention concerne un dispositif et un procédé de détection et d'analyse d'un champ vital qui permettent de placer une barrière tunnel à film mince dans la voie des ondes vitales du champ vital. Les ondes vitales traversent les électrodes à film mince de haute résistivité dans la barrière tunnel et interfèrent avec le processus à effet tunnel électronique dans la barrière tunnel. Des circuits de commande et un générateur d'impulsions pilotent le dispositif à une fréquence d'échantillonnage connue. L'interférence génère une fréquence de battement qui est émise par la barrière tunnel. En ajustant le taux d'échantillonnage sur une quantité connue, une seconde fréquence de battement est générée et le décalage de fréquence de battement est utilisé pour déterminer la fréquence d'entrée des ondes vitales. Les ondes vitales sont très faibles et génèrent des fréquences dans la gamme Térahertz de sorte que la fréquence d'entrée est sous-échantillonnée par le dispositif. L'invention concerne également un circuit conçu pour maintenir un coût raisonnable lorsqu'on fait appel à une technologie actuellement disponible.
PCT/US2013/059968 2012-09-14 2013-09-16 Analyseur de champ énergétique putatif à effet tunnel électronique WO2014043634A1 (fr)

Applications Claiming Priority (2)

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US13/619,821 US20130253302A1 (en) 2008-05-25 2012-09-14 Electron Tunneling Putative Energy Field Analyzer
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