WO2014017681A1

WO2014017681A1 - Double-chamber magnetron sputtering device

Info

Publication number: WO2014017681A1
Application number: PCT/KR2012/005985
Authority: WO
Inventors: 홍태권; 최원준; 김희성
Original assignee: 주식회사 아비즈알
Priority date: 2012-07-26
Filing date: 2012-07-26
Publication date: 2014-01-30
Also published as: KR20140014779A

Abstract

The present invention relates to a double-chamber magnetron sputtering device, which is equipped with two chambers so as to perform the same process on two substrates. The present invention provides the double-chamber magnetron sputtering device, comprising: a first process chamber inside of which a first substrate support is provided; a second process chamber inside of which a second substrate support is provided; a magnetron which is provided in between the first process chamber and the second process chamber; and a power supply portion for supplying power to a target, which is coupled to the magnetron, wherein particles which are separated from the target are transported to both of the first process chamber and the second process chamber.

Description

Dual Chamber Magnetron Sputtering Device

The present invention is directed to a double chamber magnetron sputtering device. More particularly, the present invention relates to a dual chamber magnetron sputtering apparatus having a dual chamber to perform the same process on two substrates.

Sputtering, also called physical vapor deposition (PVD), is used to deposit metal layers and layers of related materials in semiconductor integrated circuit fabrication. Sputtering is also used for thin film coatings.

1 is a schematic view showing the configuration of a general sputtering apparatus.

The sputtering apparatus 1 of a general form includes a chamber 3, a process gas supply part 5, and a process gas discharge part 7, and a substrate support on which the substrate 16 is supported by the chamber 1 ( 14 and a sputter gun 10 on which the target 9 is mounted, and a power supply 12 is connected to the sputter gun 10. The target 16 is a material to be deposited on the substrate 16. A process gas such as argon (Ar) or nitrogen (N) is supplied to the chamber 3 through the process gas supply unit 5. When power is supplied to the sputter gun by the power supply unit 12, plasma is formed on the target 9 to collide with the surface of the target 9, and target atoms or atomic clusters are sputtered from the target 9. Particles sputtered from the target 9 are deposited on the substrate 16 such that a film of target material is formed on the substrate 16. In FIG. 1, the shield 18 is provided so as to sputter only a desired portion of the mounted target 9 and maintain stability during plasma generation.

For the sputtering apparatus of the general type shown in FIG. 1, it is known that the sputtering speed is improved by using a magnetron located at the rear of the sputtered target.

2 is a schematic diagram showing the configuration of a magnetron sputtering apparatus.

The magnetron sputtering apparatus 20 is provided with a magnetron 22 behind the target 9 so as to form a magnetic field for electron and ion composition on the front of the target 9. For example, when argon is supplied to the process gas, argon is ionized to form a plasma when an appropriate power source is applied between the target and the shield. This plasma is limited in the region near the target 9 by the magnetic field formed by the magnetron 22. As argon ions impinge on the target 9, particles are sputtered from the target by momentum transfer.

That is, the magnetron sputtering apparatus 20 increases the particle deposition rate to the substrate by promoting the sputtering of the target by keeping the plasma formed inside the chamber near the target.

However, the conventional magnetron sputtering apparatus has only a single chamber, so that the amount of substrates that can be processed is inevitably limited. In addition, even if the particles are sufficiently sputtered from the target, there is a disadvantage in that the utilization of the sputtered target particles is low.

In order to solve the above problems, an object of the present invention is to provide a dual chamber magnetron sputtering apparatus having a double chamber to perform the same process for two substrates.

In addition, an object of the present invention is to provide a double chamber magnetron sputtering apparatus having a double chamber while at least one of the supply and discharge of the process gas is performed by a single configuration.

In order to achieve the above object, the present invention includes a first process chamber having a first substrate support therein; A second process chamber having a second substrate support therein; A magnetron disposed between the first process chamber and the second process chamber; And a power supply unit supplying power to a target attached to the magnetron, wherein the particles separated from the target are transferred to both the first process chamber and the second process chamber. to provide.

In one embodiment, the magnetron comprises a first magnet portion and a second magnet portion facing each other.

The target may include a first target provided to the first magnet part and a second target provided to the second magnet part.

Meanwhile, the first process chamber and the second process chamber may be provided separately, and the magnetron may be provided therebetween. Alternatively, the first process chamber and the second process chamber may be formed by partitioning one chamber.

In another embodiment of the present invention, at least one of the first process chamber and the second process chamber, the first linear drive unit for driving the first substrate support linearly or the second linear drive for driving the second substrate support linearly The drive unit is provided.

In one embodiment, the dual chamber magnetron sputtering apparatus is provided with one process gas supply unit, and the process gas is simultaneously supplied from the process gas supply unit to the first process chamber and the second process chamber.

The dual chamber magnetron sputtering apparatus may include a first process gas supply pipe connecting the first process chamber and the process gas supply unit, and a second process gas supply pipe connecting the second process chamber and the process gas supply unit. Can be.

In one embodiment, the dual-chamber magnetron sputtering apparatus is further provided with one process gas outlet, so that process gas can be simultaneously discharged from the first process chamber and the second process chamber by the process gas outlet. Can be.

The dual chamber magnetron sputtering apparatus may include a first process gas discharge pipe connecting the first process chamber and the process gas discharge unit, and a second process gas discharge pipe connecting the second process chamber and the process gas discharge unit. Can be.

According to the present invention, the sputtering process efficiency can be increased by simultaneously supplying particles generated from the target sputtered by the magnetron to the substrates provided in the two chambers.

In addition, according to the present invention, while having a dual chamber, the configuration of supplying the process gas to the dual chamber and discharging the process gas from the dual chamber is unified to increase the deposition efficiency and simplify the equipment configuration.

3 is a diagram illustrating a configuration of a dual chamber magnetron sputtering apparatus according to a preferred embodiment of the present invention.

4 is a diagram illustrating a configuration of a dual chamber magnetron sputtering apparatus according to another exemplary embodiment of the present invention.

5 is a diagram illustrating a configuration of a dual chamber magnetron sputtering apparatus according to another preferred embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the following will describe a preferred embodiment of the present invention, but the technical idea of the present invention is not limited thereto and may be variously modified and modified by those skilled in the art.

The dual chamber magnetron sputtering apparatus 30 according to a preferred embodiment of the present invention includes a first process chamber 32, a second process chamber 42, the first process chamber 32, and a second process chamber 42. ) And a first substrate support 34 and a second substrate support 44, respectively, and a magnetron 40 disposed between the first process chamber 32 and the second process chamber 42. do.

Process gas is filled in the first process chamber 32 and the second process chamber 42. The process gas may consist of an inert gas such as argon (Ar), helium (He) or nitrogen (N ₂ ). In addition, the process gas may include oxygen (O ₂ ) or hydrogen (H ₂ ) as necessary. However, in the practice of the present invention, the process gas may include various gases as well as those exemplified above.

The first process chamber 32 and the second process chamber 42 form a sealed structure, and may be provided separately from each other. However, in the embodiment of the present invention, the first process chamber 32 and the second process chamber 42 may be formed in a manner of partitioning one process chamber.

The first substrate support 34 is provided in the first process chamber 32. The substrate 38, on which a predetermined film is to be formed, is supported by the first substrate support 34 through a sputtering process. In addition, a second substrate support 44 is provided in the second process chamber 42. The second substrate support 44 is also supported by the substrate 48 on which a predetermined film is to be formed through a sputtering process.

The first substrate support 34 and the second substrate support 44 are respectively formed in the first process chamber 32 and the second process chamber 42 by the first support 36 and the second support 46. Can be fixed. In one embodiment, the first support portion 36 and the second support portion 46 may have a rod shape having a circular or rectangular cross section.

In the practice of the present invention, the magnetron 40 includes a first magnet portion 40a and a second magnet portion 40b which face each other. The first magnet part 40a and the second magnet part 40b are formed to face different polarities. The first magnet part 40a and the second magnet part 40b may be provided in the form of a plate magnet, a bar magnet, or an electromagnet. When the first magnet part 40a and the second magnet part 40b are provided in the form of a plate magnet or a bar magnet, they may be formed of Nd magnets.

The first target 50a and the second target 50b are provided on the surface where the first magnet portion 40a and the second magnet portion 40b face each other. Accordingly, the first target 50a and the second target 50b are disposed in such a manner that their surfaces face each other.

Meanwhile, the power supply unit 52 is connected to the first target 50a and the second target 50b to supply DC power or RF power to the first target 50a and the second target 50b. In FIG. 3, RF power is shown to be supplied to the first target 50a and the second target 50b.

When performing the sputtering process using the dual chamber magnetron sputtering apparatus 30 according to the present invention will be described.

After the process gas is supplied to the first process chamber 32 and the second process chamber 42, current is supplied to the first target 50a and the second target 50b. The process gas is ionized between the first target 50a and the second target 50b to generate plasma. By the generated plasma, the first target 50a and the second target 50b are sputtered to generate particles. These particles are transferred to the

substrates

38 and 48 provided in the first and second substrate supports 34 and 44, respectively, and deposited on the surfaces of the

substrates

38 and 48 to form a film.

In the practice of the present invention, the first substrate support 34 and the second substrate support 44 are substantially parallel to a line connecting the opposing surfaces of the first target 50a and the second target 50b. Are arranged in the direction. Particles generated in the first target 50a and the second target 50b may be delivered in the same direction to the first process chamber 32 and the second process chamber 42.

The plasma is constrained between the first target 50a and the second target 50b by the magnetron 40 including the first magnet portion 40a and the second magnet portion 40b facing each other to reduce the temperature of the substrate. Damage to the substrate by increasing or exposing the plasma is prevented.

Meanwhile, in the above description, the first magnet part 40a and the second magnet part 40b may be disposed in the horizontal direction or in the vertical direction.

The basic configuration of the dual chamber magnetron sputtering device 30 according to another preferred embodiment of the present invention is the same as that of the dual chamber magnetron sputtering device 30 shown in FIG. 3.

The dual chamber magnetron sputtering apparatus 30 shown in FIG. 4 includes a first linear driver 39 for linearly moving the first substrate support 34 and a second linear driver for linearly moving the second substrate support 44. (49). In one embodiment, the first linear driver 39 is connected to the first support 36, and the second linear driver 49 is connected to the second support 46. When the first substrate support 34 and / or the second substrate support 44 are linearly driven by the first linear driver 39 and / or the second linear driver 49, the

substrates

38 and 48. In the case of large area), the

substrates

38 and 48 are linearly driven to obtain an overall uniform film formation result.

Referring to FIG. 5, the dual chamber magnetron sputtering apparatus 30 according to another exemplary embodiment of the present invention further includes one process gas supply unit 60 and one process gas discharge unit 70.

In one embodiment, the process gas supply unit 60 may include a process gas storage unit 62 and a mass flow controller (MFC) 64 for storing the process gas. Here, the process gas storage part 62 may be provided in plurality for each process gas. In addition, the mass flow meter 64 may be individually provided in each process gas storage unit.

The first process gas supply pipe 68a connects the process gas supply unit 60 and the first process chamber 32. In addition, the second process gas supply pipe 68b connects the process gas supply unit 60 and the second process chamber 42. In one embodiment, the first process gas supply pipe 68a and the second process gas supply pipe 68b may be joined to the main supply pipe 66 to be connected to the process gas supply unit 60.

Accordingly, the process gas supplied from the process gas supply unit 60 is the first process chamber 32 and the second process chamber 42 through the first process gas supply pipe 68a and the second process gas supply pipe 68b. Is passed to.

In one embodiment, the process gas discharge unit 70 may be configured to include one discharge pump. A first process gas discharge pipe 72a is connected to the first process chamber 32, and a second process gas discharge pipe 72b is connected to the second process chamber 42. The first process gas discharge pipe 72a and the second process gas discharge pipe 72b join the main discharge pipe 74 and are connected to the process gas discharge part 790.

Using the dual chamber magnetron sputtering apparatus 30 according to another preferred embodiment of the present invention with reference to FIG. 5, one process gas supply unit 60 and one process gas discharge unit 70 are provided in two process chambers. By sharing (32, 42), there is an effect that the same ratio or amount of process gas is supplied to each

process chamber

32, 42, and the same amount of process gas can be discharged from each

process chamber

32, 42. . In addition, even though the two

process chambers

32 and 42 are provided, the accompanying auxiliary components can be shared, thereby reducing the equipment manufacturing cost and size.

The above description is merely illustrative of the technical idea of the present invention, and various modifications, changes, and substitutions may be made by those skilled in the art without departing from the essential characteristics of the present invention. will be. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical spirit of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by the embodiments and the accompanying drawings. . The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

The present invention can be effectively applied to sputtering devices, in particular sputtering devices using magnetrons, to increase the sputtering processing speed and capacity.

Claims

A first process chamber having a first substrate support therein;

A second process chamber having a second substrate support therein;

A magnetron disposed between the first process chamber and the second process chamber; And

Power supply unit for supplying power to the target attached to the magnetron

Including,

Dual chamber magnetron sputtering device, characterized in that the particles separated from the target is delivered to both the first process chamber and the second process chamber.
The method of claim 1,

And said magnetron comprises a first magnet portion and a second magnet portion opposing each other.
The method of claim 2,

And the target includes a first target provided to the first magnet part and a second target provided to the second magnet part.
The method according to any one of claims 1 to 3,

Dual chamber magnetron stuffing apparatus, characterized in that the first process chamber and the second process chamber are provided separately.
The method according to any one of claims 1 to 3,

The first process chamber and the second process chamber is a dual chamber magnetron sputtering apparatus, characterized in that formed by partitioning one chamber.
The method according to any one of claims 1 to 3,

At least one of the first process chamber and the second process chamber may be provided with a first linear driver for driving the first substrate support linearly or a second linear driver for driving the second substrate support linearly. Chamber magnetron sputtering device.
The method according to any one of claims 1 to 3,

One process gas supply unit is provided, the dual chamber magnetron sputtering apparatus, characterized in that the process gas is supplied from the process gas supply to the first process chamber and the second process chamber at the same time.
The method of claim 7, wherein

Dual process magnetron sputtering apparatus comprising a first process gas supply pipe connecting the first process chamber and the process gas supply unit, and a second process gas supply pipe connecting the second process chamber and the process gas supply unit .
The method of claim 7, wherein

And a process gas discharge unit, wherein the process gas is discharged simultaneously from the first process chamber and the second process chamber by the process gas discharge unit.
The method of claim 7, wherein

Dual chamber magnetron sputtering apparatus is provided with a first process gas discharge pipe connecting the first process chamber and the process gas discharge, and a second process gas discharge pipe connecting the second process chamber and the process gas discharge. .