WO2014006003A1 - Procédé et dispositif pour la détermination et la signalisation d'une technologie modulaire d'un générateur photovoltaïque - Google Patents
Procédé et dispositif pour la détermination et la signalisation d'une technologie modulaire d'un générateur photovoltaïque Download PDFInfo
- Publication number
- WO2014006003A1 WO2014006003A1 PCT/EP2013/063849 EP2013063849W WO2014006003A1 WO 2014006003 A1 WO2014006003 A1 WO 2014006003A1 EP 2013063849 W EP2013063849 W EP 2013063849W WO 2014006003 A1 WO2014006003 A1 WO 2014006003A1
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- WIPO (PCT)
- Prior art keywords
- generator
- voltage
- current
- determining
- comparison
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005516 engineering process Methods 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000002847 impedance measurement Methods 0.000 claims abstract description 10
- 230000011664 signaling Effects 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 5
- 238000011156 evaluation Methods 0.000 claims description 2
- 238000010606 normalization Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- Photovoltaic systems are used to convert sunlight into electrical energy.
- a plurality of photovoltaic modules abbreviated to PV modules, each of which is an interconnection of several
- PV cells Photovoltaic cells
- PV generator electrically connected to a photovoltaic generator (PV generator).
- the PV generator is usually connected to a possibly remotely mounted inverter, which is used to convert the direct current supplied by the PV generator into alternating current, which is suitable for feeding into a public or private (isolated) power supply network.
- PV cells and PV modules constructed from them are known in a wide variety of designs, which differ, inter alia, in the materials used, their electrical properties and the manufacturing process.
- Common to all PV cells is the utilization of at least one areally configured diode junction between two or three differently doped semiconductor layers.
- crystalline cells or modules and thin-film cells or modules can be distinguished.
- Crystalline cells use mono- or polycrystalline semiconductor material, usually silicon, which is produced as bulk material (bulk material) and which is cut into slices with a thickness of about 100 to 300 micrometers ( ⁇ ) used in the PV cells.
- a semiconductor layer of about 1 to 5 ⁇ m in thickness is applied to a suitable carrier material in an epitaxy process applied.
- the semiconductor layer in thin-film cells is either amorphous or microcrystalline.
- Thin-film cells differ from crystalline cells in, among other things, the amount of power delivered by one cell per area and - at the same voltage of the considered cells - their maximum current. Due to the interconnection of several cells to one
- the inverter of a PV system performs other important functions. For example, it usually has a tracking device for the operating point of the PV generator, the so-called MPP (Maximum Power Point) tracker. The tracking device is used to operate the PV generator at an operating point of the highest possible power output. Furthermore, some inverters provide monitoring and diagnostic functionality and are thus able to detect and signal a fault condition of the PV generator.
- MPP Maximum Power Point
- An inventive method for determining and signaling a module technology of a PV generator of a PV system comprises the following steps: An impedance measurement is carried out on the PV generator to determine a frequency dependence of an impedance of the PV generator, hereinafter also referred to as impedance curve, and a capacity of the PV generator is determined on the basis of the impedance curve. Furthermore, a PV voltage and a PV current of the PV generator are determined under reference conditions, wherein the reference conditions relate to a predetermined irradiation intensity. From the determined capacitance, the PV voltage and the PV current, a comparison capacity is calculated, which is compared with a given threshold value. The module technology of the PV generator is determined as a thin-film technology and signals if the comparison capacity is greater than the specified threshold value and as a crystalline technology if the comparison capacity is less than or equal to the specified threshold value.
- a high irradiation intensity is assumed as the reference condition, in particular a radiation intensity of 1000 W / m 2 or more.
- the reference condition in particular a radiation intensity of 1000 W / m 2 or more.
- Such chosen reference conditions can be easily identified during the day.
- the PV generator 2 comprises a parallel connection of two strings, each of which has a plurality of series-connected PV modules.
- FIG. 1 only two PV modules 2a and 2b as well as 2c and 2d, which are symbolized by the switching symbol of a single photovoltaic cell, are shown by way of example for each string. It is understood that in principle also a different number of strings connected in parallel or also a different type of series and parallel connection of PV modules in the PV generator 2 is possible.
- the power supply network 6 may be a public utility network or a private network (island operation).
- the inverter 5 is designed with three alternating current (AC) outputs for a three-phase feeding into the energy supply network 6. It is understood that a different three-phase design of the inverter 5 and / or the power supply network 6 is possible, for example, a single-phase design.
- AC alternating current
- FIG. 1 only the essential parts of the PV system 1 are shown in FIG. 1. Further DC or AC side of the inverter 5 arranged elements, such as separation or switching elements, filters, monitoring devices or transformers are not shown for reasons of clarity.
- a control device 18 which, on the one hand, drives the signal generator 1 2 and, on the other hand, receives an output signal of the signal amplifier 14, the AC voltage measuring device 1 5, the DC current measuring device 1 6 and the DC voltage measuring device 1 7 for further processing.
- the control device 18 also has a signaling output 19 at which, as a result of the method according to the invention, the module technology used is signaled, that is, whether the PV Generator 2 consists of crystalline cells (mono- or polycrystalline cells) or thin-film cells (amorphous or microcrystalline cells).
- the signaling output 19 is coupled to a control input of the inverter 5 so that it can perform, for example, an optimized MPP tracking method depending on the detected module technology and can specify suitable monitoring criteria and limit values for its internal or associated monitoring devices.
- impedance measurements are carried out on the PV generator 2 by the device 10.
- an AC signal generated by the signal generator 12 is fed via the coupling means 1 1 in the DC circuit of the PV system 1.
- the AC current I A c caused by the supplied AC signal superimposes the PV current I PV possibly flowing in the circuit.
- a measurement signal is decoupled, which is amplified by the signal amplifier 14 and forwarded for evaluation to the control device 18 and which is linked to the alternating current flowing in the circuit.
- the height of the AC voltage U AC is determined by the AC voltage measuring device 15 and also transmitted to the control device 18.
- the measurement is carried out at several frequencies f of the injected signal, so that a dependence of the impedance Z on the frequency f is determined, which is also referred to as impedance curve Z (f) or frequency-dependent impedance Z (f). If, in addition to amplitudes of the signals coupled in and out, their phase relationship is also taken into account, the impedance curve Z (f) becomes complex.
- the test signal is inductively impressed or decoupled from the coupling means 1 1 and decoupling 13. It is understood that, alternatively, the test signal can also be capacitively connected and / or decoupled.
- the signal generator 12 can, for example, output a test signal whose frequency is varied with time, for example.
- the signal measured by the signal amplifier 14 is evaluated depending on the frequency of the signal generator 12.
- the signal generator 12 outputs a broadband noise signal containing frequency components of a plurality of frequencies.
- a signal amplitude and possibly phase position are then detected as a function of the filter frequency by means of a tunable bandpass filter present in the control device or the signal amplifier 14, while the filter frequency is varied.
- Multiple use of components of device 10 may be accomplished by using the components to exchange signals, e.g. Control signals are used with corresponding transceivers near the generator via the DC lines 3, 4.
- Such a signal transmission is also known as "power line communication" (PLC), so that the coupling-in means 11 and the signal generator 12 for the transmission and the decoupling means 13 and the signal amplifier 14 can be used for the reception of signals.
- PLC power line communication
- the device 10 may be completely or partially integrated in the inverter 5. This applies in particular to the control device 18, the signal generator 12, the signal amplifier 14, the AC
- the coupling of the AC signal can also be done by a clocking of semiconductor switches of an inverter own boost converter or an inverter bridge.
- a signal amplitude detected by the decoupling means 13 and representing the alternating current is amplified via the signal amplifier 14, as well as a signal obtained by the AC voltage measuring device 15.
- the signal level and optionally a phase angle of the decoupled signal with respect to the injected signal or the measured alternating current c with respect to the measured AC voltage UAC is determined. This measurement is performed for a plurality of frequencies within a predetermined frequency range from f min to f max .
- the measured impedance curve Z (f) comprises the frequency range of the resonance point.
- the value of the capacity of the PV generator determined in step S2 is stored for further use.
- the capacitance in the equivalent circuit is composed of several components from which the junction capacitance of the PV cells may possibly be extracted. This procedure is possible, but a dark measurement in step S1 is preferred. It goes without saying that other models, possibly more complex models than that of a series resonant circuit, can also be used to evaluate the impedance curve Z (f).
- a PV voltage U R and a PV current I R are determined at a radiation intensity which is as exactly as possible This can be done for example with the aid of the DC current measuring device 16 and the DC voltage measuring device 1 7 according to the embodiment of FIG.
- a measurement at the given irradiation intensity is also referred to below as measurement under reference conditions.
- a relatively high value for the predetermined irradiation intensity can be selected, for example 1000 W / m 2 .
- Voltage UR * and a comparison PV current I R * supplies.
- a comparison PV voltage UR * of 0.5 V and a comparison PV current I R * of 5 A are defined here as values.
- the introduction of this imaginary (virtual) comparison cell serves for the resolution of the interconnection network of the plurality of individual PV cells, from which the PV generator, for example the PV generator 2 of FIG. 1, is composed.
- the aim of step S5 is to deduce from the capacitance C of the entire PV generator measured in step S2 to the comparative capacitance C * of a single PV cell intended as a comparison cell.
- the capacitance C * kris t of a polycrystalline or monocrystalline cell with the same comparative PV voltage and the same comparative PV current under reference conditions in the darkened state is less than 5 ⁇ . If different irradiation intensities are used as reference conditions, the actual capacitance values may change, but in principle the large discrepancy between the capacitance values of cells of different module technology is maintained.
- the threshold value C * sw used in step S6 can be set in a range between 5 ⁇ and 50 ⁇ , for example 40 ⁇ .
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
L'invention concerne un procédé pour la détermination et la signalisation d'une technologie modulaire d'un générateur photovoltaïque (2) d'une installation photovoltaïque (1). Ledit procédé comprend les étapes suivantes : - l'exécution d'une mesure d'impédance sur le générateur photovoltaïque (2) pour la détermination d'une dépendance vis-à-vis de la fréquence d'une impédance (Z(f)) du générateur photovoltaïque (2); - la détermination d'une capacité (C) du générateur photovoltaïque (2) en fonction de la dépendance vis-à-vis de la fréquence de l'impédance (Z(f)); - la détermination d'une tension photovoltaïque (UR) et d'une intensité de courant photovoltaïque (IR) du générateur photovoltaïque (2) sous des conditions de référence qui concernent une intensité de rayonnement incident prédéfinie; - le calcul d'une capacité comparative (C*) à partir de la capacité déterminée (C), de la tension photovoltaïque (UR) et de l'intensité de courant photovoltaïque (IR); - la comparaison de la capacité comparative (C*) à une valeur de seuil prédéfinie (C*sw); - la détermination et la signalisation de la technologie modulaire du générateur photovoltaïque (2) comme technologie à couche mince si la capacité comparative (C*) est plus grande que la valeur de seuil prédéfinie (C*sw); et - la détermination et la signalisation de la technologie modulaire du générateur photovoltaïque (2) comme technologie cristalline si la capacité comparative (C*) est inférieure ou égale à la valeur de seuil prédéfinie (C*s). L'invention concerne en outre un dispositif approprié à la mise en oeuvre du procédé et un onduleur qui comporte au moins un dispositif de commande d'un tel dispositif.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210105807 DE102012105807B3 (de) | 2012-07-02 | 2012-07-02 | Verfahren und Vorrichtung zur Bestimmung und Signalisierung einer Modultechnologie eines Photovoltaikgenerators |
DE102012105807.5 | 2012-07-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014006003A1 true WO2014006003A1 (fr) | 2014-01-09 |
Family
ID=48747540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/063849 WO2014006003A1 (fr) | 2012-07-02 | 2013-07-01 | Procédé et dispositif pour la détermination et la signalisation d'une technologie modulaire d'un générateur photovoltaïque |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102012105807B3 (fr) |
WO (1) | WO2014006003A1 (fr) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007048421A2 (fr) * | 2005-10-24 | 2007-05-03 | Conergy Ag | Interrupteur a fusibles avec gestion de commande pour piles solaires |
US20100149847A1 (en) * | 2008-12-12 | 2010-06-17 | Kent Kernahan | Apparatus providing bias to solar cells |
WO2011032993A1 (fr) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Procédé et dispositif pour la caractérisation d'au moins un module de cellules solaires |
WO2011066554A2 (fr) * | 2009-11-30 | 2011-06-03 | Atonometrics, Inc. | Système de mesure des relations du courant par rapport à la tension (i-v) pour des modules photovoltaïques |
WO2011144649A1 (fr) * | 2010-05-18 | 2011-11-24 | Sma Solar Technology Ag | Procédé de diagnostic des contacts d'un système photovoltaïque et appareil correspondant |
WO2013011046A1 (fr) * | 2011-07-19 | 2013-01-24 | Refusol Gmbh | Installation photovoltaïque avec prétension sur l'onduleur |
-
2012
- 2012-07-02 DE DE201210105807 patent/DE102012105807B3/de not_active Expired - Fee Related
-
2013
- 2013-07-01 WO PCT/EP2013/063849 patent/WO2014006003A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007048421A2 (fr) * | 2005-10-24 | 2007-05-03 | Conergy Ag | Interrupteur a fusibles avec gestion de commande pour piles solaires |
US20100149847A1 (en) * | 2008-12-12 | 2010-06-17 | Kent Kernahan | Apparatus providing bias to solar cells |
WO2011032993A1 (fr) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Procédé et dispositif pour la caractérisation d'au moins un module de cellules solaires |
WO2011066554A2 (fr) * | 2009-11-30 | 2011-06-03 | Atonometrics, Inc. | Système de mesure des relations du courant par rapport à la tension (i-v) pour des modules photovoltaïques |
WO2011144649A1 (fr) * | 2010-05-18 | 2011-11-24 | Sma Solar Technology Ag | Procédé de diagnostic des contacts d'un système photovoltaïque et appareil correspondant |
WO2013011046A1 (fr) * | 2011-07-19 | 2013-01-24 | Refusol Gmbh | Installation photovoltaïque avec prétension sur l'onduleur |
Also Published As
Publication number | Publication date |
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DE102012105807B3 (de) | 2013-11-07 |
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