WO2013189835A1 - Procédé de fabrication d'une couche de conversion de longueur d'onde en céramique et élément d'éclairage comprenant une couche de conversion de longueur d'onde en céramique - Google Patents
Procédé de fabrication d'une couche de conversion de longueur d'onde en céramique et élément d'éclairage comprenant une couche de conversion de longueur d'onde en céramique Download PDFInfo
- Publication number
- WO2013189835A1 WO2013189835A1 PCT/EP2013/062288 EP2013062288W WO2013189835A1 WO 2013189835 A1 WO2013189835 A1 WO 2013189835A1 EP 2013062288 W EP2013062288 W EP 2013062288W WO 2013189835 A1 WO2013189835 A1 WO 2013189835A1
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- WO
- WIPO (PCT)
- Prior art keywords
- wavelength conversion
- ceramic
- conversion layer
- ceramic material
- light
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 196
- 239000000919 ceramic Substances 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 140
- 239000000843 powder Substances 0.000 claims abstract description 50
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 239000000443 aerosol Substances 0.000 claims abstract description 39
- 239000000126 substance Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000005245 sintering Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- GSWGDDYIUCWADU-UHFFFAOYSA-N aluminum magnesium oxygen(2-) Chemical compound [O--].[Mg++].[Al+3] GSWGDDYIUCWADU-UHFFFAOYSA-N 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims 3
- 239000010410 layer Substances 0.000 description 129
- 239000002245 particle Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 229910052761 rare earth metal Inorganic materials 0.000 description 12
- 150000002910 rare earth metals Chemical class 0.000 description 12
- 230000005855 radiation Effects 0.000 description 7
- 238000000149 argon plasma sintering Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910003564 SiAlON Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 229910052605 nesosilicate Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000004762 orthosilicates Chemical class 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- -1 silicon nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- OFOSXJVLRUUEEW-UHFFFAOYSA-N aluminum;lutetium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Lu+3] OFOSXJVLRUUEEW-UHFFFAOYSA-N 0.000 description 1
- PCTXFKUTDJMZPU-UHFFFAOYSA-N aluminum;oxygen(2-);terbium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Tb+3] PCTXFKUTDJMZPU-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Definitions
- phosphors are used.
- LED light-emitting diodes
- phosphors For example, light-emitting diodes (LED) are combined with such phosphors to obtain a mixed-color spectrum instead of the single-color emission spectrum of an LED.
- LED light-emitting diodes
- Conversion LEDs are known in which a blue or
- ultraviolet emitting light emitting diode chip is used, the light is converted by one or more suitable phosphors in longer wavelength light. As a result, any light colors, in particular white light, can be generated.
- Known converters are made, for example, as a composite of a transparent resin with embedded phosphor powder.
- Heat dissipation can be achieved with ceramic Reach phosphor converters, wherein the converter by one or more ceramic phosphors or by a ceramic composite with one or more
- Phosphors is formed in a matrix such as a ceramic phosphor in a ceramic matrix.
- Ceramic converters are usually sintered
- Light emitting diodes can be exposed
- Ceramic converters are not produced by sintering, but must be prepared in separate processes and can only later in the finished state
- At least another object of certain embodiments is to provide a lighting element with a ceramic
- a method for producing a ceramic wavelength conversion layer has a method step in which a powder mixture having at least one first and one second powdery Ceramic material is provided.
- the powder mixture may consist of the at least one first and one second powdered ceramic material.
- the powder mixture is applied to a surface for forming the ceramic wavelength conversion layer by means of an aerosol deposition method.
- Component of a lighting element are formed.
- a lighting element has a ceramic
- Wavelength conversion layer on at least one surface of a component.
- Wavelength conversion layer can be produced in particular by the aforementioned method.
- a ceramic material or a ceramic material is understood in particular to mean an oxide-containing and / or a nitride-containing material, in particular in powder form
- inorganic glasses are of the
- Ceramic material or “ceramic material” includes.
- a powder-shaped ceramic material is to be understood in particular as meaning a powder of a material with which a ceramic element can be produced, that is to say a
- the ceramic wavelength conversion layer is for
- Wavelength conversion layer at least one ceramic
- the first ceramic material is replaced by a ceramic
- the wavelength conversion layer can have further wavelength conversion substances
- the second ceramic material may be formed by another ceramic wavelength conversion substance, or the wavelength conversion layer may include at least one or more ceramic ones in addition to the first and second ceramic materials
- Wavelength conversion materials formed ceramic materials. If the wavelength conversion layer has a plurality of wavelength conversion substances
- Ceramic materials they are preferably different from each other and can preferably emit light of different energy.
- Aerosolabscheideclar As Aerosolabscheideclar (ADM: "aerosol deposition method”) is here and below referred to a cold spray, as described in the publication J. Akedo, Journal of Thermal Spray Technology 17 (2), pp. 181-198 (2008)
- an aerosol chamber which can also be referred to as an aerosol chamber and via a gas supply line and a
- Gas drainage features By means of the gas supply line, a gas, preferably an inert gas, can be conducted into the powder chamber.
- the gas may, for example, contain or be helium, nitrogen, oxygen, argon, air or a mixture thereof.
- Particles of the powder mixture pass through a nozzle in the coating chamber and are directed through the nozzle in a jet-like manner onto the surface to be coated, which can be suitably tempered and / or roughened or smooth.
- the jet of aerosol can hit the surface to be coated at certain points. Furthermore, the jet of aerosol can hit the surface to be coated at certain points. Furthermore, the jet of aerosol can hit the surface to be coated at certain points. Furthermore, the jet of aerosol can hit the surface to be coated at certain points. Furthermore, the
- Beam with the aerosol also widened, for example, linear fanned, hit the surface to be coated.
- the gas of the aerosol acts as an accelerating gas because the particles contained in it are sprayed onto the surface to be coated via the gas flow.
- This process can also be referred to as "scanning".
- the powder mixture with at least the first and second ceramic material by Targeted choice of materials, the particle morphology, the particle size distribution and the Aufsprüh discipline, so for example, the gas stream and / or the nozzle geometry, are prepared with desired properties. Furthermore, with the Aerosolabscheideclar an application of the
- the ceramic wavelength conversion layer has the ceramic materials contained in the powder mixture provided, that is to say at least the first and the second ceramic material, in the form of particles which are connected to one another.
- the wavelength conversion layer as well as the powder mixture provided can be exclusive
- binders for example, binders, solvents, adhesive materials or metal particles, which are provided in known methods, a compound of the particles of the ceramic
- Wavelength conversion layer are not necessary in the wavelength conversion layer described here and in the method described here and therefore not present.
- the first and second ceramic materials are each provided as a powder, which is formed by particles having a mean diameter ds o of greater than or equal to 100 nm, preferably greater than or equal to 300 nm.
- the particles furthermore have a mean diameter ds o of less than or equal to 3 ⁇ m and preferably of less than or equal to 1 ⁇ m.
- the ceramic materials are due to their provision as a powder mixture in the ceramic
- Wavelength conversion layer pre-mixed Depending on the quantity of ceramic materials provided in each case
- Powder mixture as well as depending on adhesion properties during the application can be in the ceramic
- Wavelength conversion layer to a lesser extent contained ceramic material be embedded in a ceramic material contained to a higher proportion, so that the ceramic material present to a higher proportion a
- Matrix material forms for the ceramic material present to a lesser extent.
- the stability of the ceramic wavelength conversion layer can be given at least by the ceramic material contained to a greater extent.
- Temperatures are carried out, in particular, for example, even at room temperature, because the energy used to
- Consolidation of the particles of the powder mixture ie for "caking" of the particles, is necessary to form the ceramic wavelength conversion layer, can be provided via the kinetic energy in the gas stream, while
- Aerosolabscheideclar can thus a higher
- Aerosol separation is formed, a
- the ceramic wavelength conversion layer can be applied to materials that would melt or degrade under sintering conditions.
- Materials can not be sintered, may give an indication of the method described here.
- the component on whose surface the wavelength conversion layer is applied can be any material that can be sintered.
- Ceramic material a glass, a plastic and / or a semiconductor material.
- Wavelength conversion layer in the form of a dense
- the wavelength conversion layer may be a ceramic
- Wavelength conversion layer can be specified.
- Wavelength conversion layer is free of pores and is designed as a pore-free ceramic body.
- a ceramic density of greater than or equal to 90% or greater than or equal to 99% means that less than 10% or less than 1% of the volume of the wavelength conversion layer is formed by pores.
- the wavelength conversion layer can be applied with a thickness of greater than or equal to 1 ⁇ m, preferably greater than or equal to 10 ⁇ m, and particularly preferably greater than or equal to 100 ⁇ m. Furthermore, the thickness of the
- Wavelength conversion layer is less than or equal to 500 ym. The thicker the wavelength conversion layer is formed, the higher the
- Wavelength conversion layer is applied, can lead.
- ceramic materials may be well applied by the aerosol deposition process. Good application here means that layer thicknesses of
- Powder preparation conditions less good or even not at the aerosol deposition to form a layer with a significant layer thickness can lead. How well a ceramic material can be deposited as a layer is also determined, for example, by the particle size distribution of the starting powder. For example, however
- Powder mixture is used with at least the first and the second powdery ceramic material, a mixture, for example, from a good and a less well individually or non-separable powdery
- Ceramic material can be provided.
- the readily depositable material is provided at least 50% in the powder mixture.
- the mixture of the differently depositable ceramic materials results in a composite in which the less readily depositable ceramic material is readily depositable in the wavelength conversion layer
- Ceramic material is embedded. The fact that the good depositable ceramic material thus in the ceramic
- Wavelength conversion layer serves as a matrix material for the less well or not depositable ceramic material, despite the use of a less well or not depositable ceramic material, a ceramic
- Wavelength conversion layer can be applied with such a material having the desired thickness, in particular selected from the above-mentioned thickness range.
- the first and second ceramic materials preferably have different refractive indices from each other.
- the advantage can be achieved that compared to a ceramic wavelength conversion layer, which has only a ceramic material, the light scattering
- Wavelength conversion layer which is only a single
- Ceramic material has low, and the light path is so short especially for smaller thicknesses that usually at the desired layer thicknesses not sufficient
- ceramic wavelength conversion materials that form, for example, the first or second ceramic materials may include at least one or more of the following wavelength conversion materials, or may be formed of one or more of the following: rare earth doped garnets, rare earth doped ones
- Nitridoalumosilicates and aluminum nitrides Nitridoalumosilicates and aluminum nitrides.
- Embodiments in particular a garnet, about
- nitridic wavelength conversion substances can be used as the wavelength conversion substance in further preferred embodiments.
- nitridic wavelength conversion materials are those based on compounds of alkaline earth metals with SiON, SiAlON, Si x N y and AlSiN.
- the material for the wavelength conversion substance is doped in further preferred embodiments, for example, with one or more of the following activators: cerium, europium, neodymium, terbium, erbium, praseodymium, samarium, manganese. Purely exemplary for possible doped
- Wavelength conversion materials are cerium-doped
- a wavelength conversion substance of the wavelength conversion layer such as the first or second ceramic material, by YAG: Ce to emit a yellow
- Wavelength conversion layer such as the first or second ceramic material, by strontium SiON: Eu for emission of green secondary radiation, by calcium SiAlON: Eu •
- M 2 SisN 8 Secondary radiation or by M 2 SisN 8 : Eu, where M here and below one or more selected from Ca, Sr and Ba is formed to emit a red secondary radiation.
- the first and the second ceramic material are each formed by a ceramic wavelength conversion substance.
- the first ceramic material may be formed by a ceramic wavelength conversion material that is well depositable by aerosol deposition as described above, while the second ceramic material is formed by a ceramic wavelength conversion material that is less or not separable by aerosol deposition.
- the second ceramic material may be embedded in the first ceramic material.
- the first ceramic material may be formed by a ceramic wavelength conversion material that is well depositable by aerosol deposition as described above, while the second ceramic material is formed by a ceramic wavelength conversion material that is less or not separable by aerosol deposition.
- the second ceramic material may be embedded in the first ceramic material.
- Ceramic material are formed by YAG: Ce, while the second ceramic material is formed by a nitridic ceramic wavelength conversion substance, for example ⁇ SisNsiEu.
- Ceramic material formed by a transparent ceramic material is transparent.
- Transparent means here that in the visible spectral range no conversion takes place through the transparent ceramic material. For example, that can
- the first ceramic material may be formed by YAG: Ce, while the second ceramic material may be formed by alumina.
- Aerosol deposition is separable.
- the first ceramic material may be replaced by the less well or non-electrodepositable ceramic wavelength conversion material are formed while the second ceramic material is formed by a transparent ceramic material, for example one of the aforementioned materials, which can be well deposited by means of aerosol deposition.
- Ceramic material is then in the powder mixture in a
- Ceramic material is embedded. As already described above, the use of the combination of a good and a less well or not at all by means of aerosol deposition ceramic material can be a composite through the
- Wavelength conversion layer having a desired thickness and adherent to the surface on which it is applied, can be formed.
- Semiconductor chip or formed by a semiconductor wafer with at least one light-emitting layer.
- semiconductor wafers may be separable into a multiplicity of light-emitting semiconductor chips.
- Aerosolabscheideclar it may be possible that on the light-emitting semiconductor chip or on the
- Semiconductor wafer ceramic wavelength conversion layer can be applied directly without, as in a
- Wavelength conversion layer also lead to a roughening of the semiconductor material, so that, for example, the
- ceramic wavelength conversion layer forms a roughened interface with the wavelength conversion layer, whereby the light outcoupling from the light-emitting semiconductor chip and, correspondingly, the light coupling into the wavelength conversion layer can improve.
- the lighting element as a component, on which the wavelength conversion layer is applied, a housing, for example for a light-emitting semiconductor chip, or a reflector,
- Wavelength conversion layer is applied by a carrier, for example, a glass, ceramic or
- Plastic plate or film are formed on the wavelength conversion layer by means of
- Aerosolabscheidevons is applied.
- the carrier with the ceramic wavelength conversion layer can be any material that Aerosolabscheidevons.
- emitting semiconductor chip can be arranged.
- Wavelength conversion layer is applied, formed by a ceramic substrate having one or more of the
- Wavelength conversion materials as the first and second powdered ceramic material for forming the
- Wavelength conversion layer can be applied.
- a YAG: Ce substrate can be used as a component on which a powder mixture with a
- ceramic wavelength conversion substance preferably a red emitting wavelength conversion substance, and a
- Wavelength conversion layer can be applied.
- Wavelength conversion layer may be a suitable by the choice of the first and second ceramic material
- Conversion effect can be achieved, for example by a prolonged light path due to the increased light scattering by the different refractive indices of the first and second ceramic material. This can be a
- Aerosolabscheidevons are deposited and can be introduced by the further ceramic material in the wavelength conversion layer.
- FIGS. 1A to IC are schematic representations of
- Wavelength conversion layer according to an embodiment
- Figure 2 is a schematic representation of a
- Illumination element with a ceramic wavelength conversion layer according to a further exemplary embodiment
- Figure 3 is a schematic representation of a
- Illumination element with a ceramic wavelength conversion layer according to a further exemplary embodiment
- Figure 4 is a schematic representation of a
- Figure 5 is a schematic representation of a
- Lighting element with a ceramic wavelength conversion layer according to another embodiment.
- identical, identical or identically acting elements can each be provided with the same reference numerals.
- the illustrated elements and their proportions with each other are not to be regarded as true to scale, but rather individual elements, such as layers, components, components and areas may be exaggerated in size for ease of illustration and / or understanding.
- a method for producing a ceramic wavelength conversion layer 1 is shown.
- a powder mixture 10 having at least one first powdery ceramic material 11 and at least one second powdered ceramic material 12 is provided.
- Ceramic material 11, 12 are each as a powder having a mean particle diameter ds o of greater than or equal to 100 nm and less than or equal to 3 ym and preferably in one
- Range greater than or equal to 300 nm and less than or equal to 1 ym provided.
- the ceramic materials 11, 12 have shown in the
- Wavelength conversion layer 1 achieves that the
- Wavelength conversion layer 1 passing light at the interfaces between the first and the second
- a ceramic material for example, a ceramic material, a glass, a plastic and / or a semiconductor material.
- the powder mixture 10 becomes a
- Powder mixture 10 formed aerosol is applied in an aerosol jet 13 by means of a nozzle 3 on the surface 20. Due to the high kinetic energy of the particles of the
- Aerosol jet 13 may be movable relative to surface 20 by movement of nozzle 3 and / or component 2 such that the ceramic one shown in FIG
- Wavelength conversion layer 1 can be formed on the surface 20.
- the wavelength conversion layer 1 can be formed on the surface 20.
- Wavelength conversion layer 1 free of other, non-ceramic materials, as a powder mixture only
- the ceramic wavelength conversion layer 1 can be any ceramic wavelength conversion layer 1 .
- the ceramic wavelength conversion layer 1 has a
- the Wavelength conversion layer 1 preferably with a thickness of greater than or equal to 1 ym and in particular of greater than or equal to 10 ym applied.
- the wavelength conversion layer 1 may also have a thickness of greater than or equal to 100 ym and less than or equal to 500 ym,
- Ceramic material 12 to a lesser extent in
- the first ceramic material 11 in the finished ceramic wavelength conversion layer 1 forms a matrix material in which the second ceramic material 12 is embedded.
- the second ceramic material 12 it is possible, for example, for the second ceramic material 12 to be a ceramic material which, according to the description above in the general part, can be deposited less well or not at all by means of aerosol deposition, if it is the only one
- the first ceramic material 11 is formed by a ceramic material which can be deposited well by means of aerosol deposition.
- the second ceramic material 12 may be formed by a nitridic wavelength conversion substance, such as SisNsiEu with M selected from Ca, Sr and Ba, which is described in U.S. Pat
- Aerosol deposition can be deposited.
- Ceramic material 11 may, for example, another
- ceramic wavelength conversion material such as YAG: Ce
- Wavelength conversion layer 1 has in this case YAG: Ce as the first ceramic material 11 a yellow
- Wavelength conversion layer 1 for example, warm white light are generated.
- the first ceramic material 11 or the second ceramic material 12 is formed by a transparent ceramic material.
- the transparent ceramic material 11 or the second ceramic material 12 is formed by a transparent ceramic material.
- Ceramic material may, for example, undoped YAG,
- Silicon nitride aluminum nitride, a SiAlON or mixtures thereof or be it. Will be the first
- the transparent ceramic material the second For example, YAG: Ce may be selected as the first ceramic material 11 and aluminum oxide as the second ceramic material 12 in the first ceramic material 11.
- the transparent second ceramic material 12 forms scattering centers in the ceramic in this case
- At least one of which is formed by a ceramic wavelength conversion substance and which have different refractive indices.
- Wavelength conversion layer 1 with the previously described thicknesses and ceramic densities also using a
- Ceramic material 12 are formed, which can be deposited less well or hardly by means of aerosol deposition. By adjusting the relative proportion of the first
- Ceramic material 11 to the second ceramic material 12 and their refractive indices and conversion properties, the light scattering and thus the conversion effect of the ceramic wavelength conversion layer 1 can be optimized.
- the ceramic wavelength conversion layer 1 can thus faster and more of several phosphors
- Wavelength conversion materials are used, which can not be deposited in single layers.
- FIG. 2 shows a lighting element 100 which comprises a ceramic wavelength conversion layer 1 on a semiconductor chip 4 emitting light
- Component 2 has.
- the light-emitting semiconductor chip 4 can be arranged in a housing 5, for example a plastic housing or a ceramic housing, which is merely indicated in FIG.
- the light-emitting semiconductor chip 4 may also be arranged on a carrier, for example a ceramic carrier, a plastic carrier or a printed circuit board. Further features relating to the light-emitting semiconductor chip 4 or the housing 5, for example materials, layer structures or electrical contact layers, as well as concerning the mounting and the electrical connection of the light-emitting
- the surface 20 on which the wavelength conversion layer 1 is deposited is formed by the light output surface of the light-emitting semiconductor chip 4.
- the ceramic wavelength conversion layer 1 by means of the previously described Aerosolabscheidevons directly on the light output surface of the light
- this may result in a roughening of the light outcoupling surface of the light-emitting semiconductor chip 4, so that the interface between the light-emitting semiconductor chip 4 and the ceramic wavelength conversion layer 1 is roughened and irregular, whereby light from the light-emitting semiconductor chip 4 efficiently in the
- Wavelength conversion layer 1 can be coupled.
- the wavelength conversion layer 1 can, for example, be applied to the light already mounted in the housing 5
- Aerosolabscheidevons can be carried out at low temperatures, for example at room temperature. This allows the light-emitting
- Wavelength conversion layer 1 for example, on a provided with a semiconductor layer sequence with at least one active, light-emitting layer semiconductor wafer are applied, which via a suitable
- Wavelength conversion layer 1 can be separated.
- Wavelength conversion layer 1 is applied by means of aerosol deposition, through surfaces of the light-emitting Semiconductor chips 4 and a part of the surface of the
- Housing 5 is formed.
- the ceramic wavelength conversion layer 1 can be applied directly to the housing 5 and the light-emitting semiconductor chip 4 by the aerosol deposition method without significant damage and loss of the structural integrity of the coated components.
- FIG. 4 shows a further exemplary embodiment of an illumination element 100 in which the ceramic wavelength conversion layer 1 is applied to the surface 20 of a component 2 formed by a carrier 6.
- the carrier 6 can be formed for example by a glass or a transparent ceramic substrate, for example in the form of a small plate. The formed by the carrier 6 and the wavelength conversion layer 1
- Wavelength conversion element can be directly on a
- Light-emitting semiconductor chip 4 or also, as shown in Figure 4, spaced from the light-emitting
- the component 2 on the surface 20 of which the wavelength conversion layer 1 is applied is formed by a ceramic substrate which contains or is formed from one or more of the wavelength conversion substances mentioned above in the general part. It will be on
- Wavelength conversion materials as the first and second powdered ceramic material for forming the
- Wavelength conversion layer 1 are applied.
- a YAG: Ce substrate can be used as component 2, on which a powder mixture with a
- Wavelength conversion layer 1 are applied.
- Lighting element 100 which has as a component 2 coated with the ceramic wavelength conversion layer 1 a reflector 7 in which, for example, a light-emitting semiconductor chip 4 is mounted.
- the reflector 7 may, for example, a metal-coated
- Aerosol deposition method is a method in which the ceramic materials 11, 12 are sprayed, the wavelength conversion layer 1 can be readily applied to a curved surface as that of the reflector 7 shown.
- the embodiments shown in the figures may alternatively or additionally also have further features as described in the general part.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
L'invention concerne un procédé de fabrication d'une couche de longueur d'onde en céramique(1), selon lequel un mélange de poudre (10) comprenant au moins un premier et un deuxième matériau céramique pulvérulent (11, 12) est fourni et le mélange de poudre (10) est appliqué au moyen d'un procédé de dépôt par pulvérisation sur une surface (20) pour former la couche de conversion de longueur d'onde en matériau céramique (1). Le premier matériau céramique (11) est formé par une matière de conversion de longueur d'onde en céramique, le premier et le deuxième matériau en céramique (11, 12) présentent différents indices de réfraction, la couche de conversion de longueur d'onde (1) présente une densité céramique supérieure ou égale à 90 % et la couche de conversion de longueur d'onde (1) est appliquée avec une épaisseur supérieure ou égale à 1 μm. L'invention concerne par ailleurs un élément d'éclairage (100) comprenant une couche de conversion de longueur d'onde en céramique (1) sur au moins une surface (20) d'un composant (2).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102012105278.6 | 2012-06-18 | ||
DE102012105278A DE102012105278A1 (de) | 2012-06-18 | 2012-06-18 | Verfahren zur Herstellung einer keramischen Wellenlängenkonversionsschicht und Beleuchtungselement mit einer keramischen Wellenlängenkonversionsschicht |
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WO2013189835A1 true WO2013189835A1 (fr) | 2013-12-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2013/062288 WO2013189835A1 (fr) | 2012-06-18 | 2013-06-13 | Procédé de fabrication d'une couche de conversion de longueur d'onde en céramique et élément d'éclairage comprenant une couche de conversion de longueur d'onde en céramique |
Country Status (2)
Country | Link |
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DE (1) | DE102012105278A1 (fr) |
WO (1) | WO2013189835A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108069710A (zh) * | 2016-11-15 | 2018-05-25 | 深圳市光峰光电技术有限公司 | 一种发光陶瓷及发光装置 |
Families Citing this family (1)
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DE102016112640A1 (de) † | 2016-07-11 | 2018-01-11 | Miele & Cie. Kg | Vorrichtung und Verfahren zum Unterstützen eines energiesparenden Betriebs eines Bodenpflegegeräts und Bodenpflegegerät |
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US20070164300A1 (en) * | 2004-03-05 | 2007-07-19 | Konica Minolta Holdings, Inc. | White light emitting diode (white led) and method of manufacturing white led |
US20070176194A1 (en) * | 2004-06-22 | 2007-08-02 | Konica Minolta Holdings, Inc. | White light emitting diode and method of manufcturing the same |
JP2011228390A (ja) * | 2010-04-16 | 2011-11-10 | Fujitsu Ltd | キャパシタ及びその製造方法 |
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US6193908B1 (en) * | 1997-02-24 | 2001-02-27 | Superior Micropowders Llc | Electroluminescent phosphor powders, methods for making phosphor powders and devices incorporating same |
US5876682A (en) * | 1997-02-25 | 1999-03-02 | The United States Of America As Represented By The Secretary Of The Navy | Nanostructured ceramic nitride powders and a method of making the same |
DE20308495U1 (de) * | 2003-05-28 | 2004-09-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Konversions-LED |
KR100665214B1 (ko) * | 2005-06-14 | 2007-01-09 | 삼성전기주식회사 | 형광체막 제조 방법, 이를 이용한 발광장치의 제조 방법 및발광장치 |
-
2012
- 2012-06-18 DE DE102012105278A patent/DE102012105278A1/de not_active Withdrawn
-
2013
- 2013-06-13 WO PCT/EP2013/062288 patent/WO2013189835A1/fr active Application Filing
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US20070164300A1 (en) * | 2004-03-05 | 2007-07-19 | Konica Minolta Holdings, Inc. | White light emitting diode (white led) and method of manufacturing white led |
US20070176194A1 (en) * | 2004-06-22 | 2007-08-02 | Konica Minolta Holdings, Inc. | White light emitting diode and method of manufcturing the same |
JP2011228390A (ja) * | 2010-04-16 | 2011-11-10 | Fujitsu Ltd | キャパシタ及びその製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108069710A (zh) * | 2016-11-15 | 2018-05-25 | 深圳市光峰光电技术有限公司 | 一种发光陶瓷及发光装置 |
US11245243B2 (en) | 2016-11-15 | 2022-02-08 | Appotronics Corporation Limited | Light-emitting ceramic and light-emitting device |
Also Published As
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DE102012105278A1 (de) | 2013-12-19 |
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