WO2013161496A1 - Current sensor - Google Patents

Current sensor Download PDF

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Publication number
WO2013161496A1
WO2013161496A1 PCT/JP2013/059094 JP2013059094W WO2013161496A1 WO 2013161496 A1 WO2013161496 A1 WO 2013161496A1 JP 2013059094 W JP2013059094 W JP 2013059094W WO 2013161496 A1 WO2013161496 A1 WO 2013161496A1
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WO
WIPO (PCT)
Prior art keywords
conversion element
magnetoelectric conversion
magnetic field
magnetoelectric
current path
Prior art date
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PCT/JP2013/059094
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French (fr)
Japanese (ja)
Inventor
蛇口　広行
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アルプス・グリーンデバイス株式会社
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Publication of WO2013161496A1 publication Critical patent/WO2013161496A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used

Definitions

  • the present invention relates to a current sensor that detects a current to be measured flowing in a current path, and more particularly to a current sensor that detects magnetism of an induced magnetic field generated by a current flowing in a current path.
  • a current sensor that detects a measured current flowing in a current path (wire) is well known for controlling and monitoring various devices.
  • a current using a magnetic core that surrounds the current path and focuses the magnetic flux generated around the current path, and a magnetoelectric transducer that detects magnetism generated when current flows in the current path Sensors are well known.
  • FIG. 18 is a diagram schematically showing a configuration of a current detector 900 in the conventional example of Patent Document 1.
  • a current detector 900 shown in FIG. 18 includes a parasitic capacitance adjustment unit 910 provided on the mounting wiring board 909, and the parasitic capacitance adjustment unit 910 causes a connection between the conductor 902 and the wiring unit 940 wired on the mounting wiring board 909. It is said that malfunction of the circuit can be suppressed by setting the value of the parasitic capacitance (stray capacitance) to the same value.
  • the present invention solves the above-described problems, and an object of the present invention is to provide a current sensor capable of measuring a current value with high accuracy by reducing the influence of noise.
  • a current sensor for detecting a current path through which a current to be measured flows and a magnetic field of an induced magnetic field generated by a current flowing through the current path.
  • Surrounding the magnetic core provided with the first gap and the second gap, the first magnetoelectric conversion element provided in the first gap of the magnetic core, and the magnetic core A second magnetoelectric conversion element provided in the second gap, and an arithmetic device for calculating a difference in output between the first magnetoelectric conversion element and the second magnetoelectric conversion element, The angle formed by the direction of the first magnetic field applied to the magnetoelectric conversion element and the first magnetosensitive direction detected by the first magnetoelectric conversion element, and the induction magnetic field applied to the second magnetoelectric conversion element.
  • the direction of the second magnetic field and the second magnetoelectric transducer detect The angle formed by the two magnetic sensing directions is different, and the total capacitance between the current path and the first magnetoelectric transducer, and between the current path and the second magnetoelectric trans
  • the current sensor of the present invention is different in the angle formed between the direction of the first magnetic field and the first magnetosensitive direction and the angle formed between the direction of the second magnetic field and the second magnetosensitive direction. Since the total capacitance between the path and the first magnetoelectric conversion element is equal to the total capacitance between the current path and the second magnetoelectric conversion element, it is detected by the two magnetoelectric conversion elements. When the difference between different output values is calculated by the calculation device, the influence of noise caused by the capacitance can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide a current sensor that can measure a current value with high accuracy.
  • the current sensor of the present invention is characterized in that a dielectric is provided between the current path and the magnetic core.
  • this dielectric since the dielectric is provided between the current path and the magnetic core, this dielectric allows the total capacitance between the current path and the first magnetoelectric transducer, the current path and the first The total capacitance between the two magnetoelectric conversion elements can be easily made equal, and the total capacitance of each can be made more equal. For this reason, when the difference between the different output values detected by the two magnetoelectric conversion elements is calculated by the calculation device, it is possible to subtract the influence of noise caused by the capacitance more accurately. As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
  • the direction of the first magnetic field and the first magnetosensitive direction are parallel, and the direction of the second magnetic field and the second magnetosensitive direction are parallel. Yes.
  • the first magnetic field direction and the first magnetosensitive direction are parallel, and the second magnetic field direction and the second magnetosensitive direction are parallel.
  • the induced magnetic fields received by the first and second magnetoelectric conversion elements are the same, and the external magnetic fields received by the first and second magnetoelectric conversion elements at different angles are different.
  • the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced.
  • the current sensor of the present invention is characterized in that the direction of the first magnetic field is opposite to the direction of the second magnetic field.
  • the output value of one of the magnetoelectric transducers Becomes a positive value and the output value of the other magnetoelectric conversion element becomes a negative value, so that the maximum difference value between the output value of the first magnetoelectric conversion element and the output value of the second magnetoelectric conversion element is obtained.
  • the sensitivity of the current sensor can be increased by calculating the difference value between the outputs of the first and second magnetoelectric transducers with the computing device.
  • the current sensor of the present invention is characterized in that the direction of the first magnetic field and the first magnetosensitive direction are parallel, and the direction of the second magnetic field and the second magnetosensitive direction are orthogonal to each other. .
  • the magnetoelectric transducer since the direction of the first magnetic field and the first magnetosensitive direction are parallel to each other and the direction of the second magnetic field and the second magnetosensitive direction are orthogonal to each other, The magnetoelectric transducer no longer feels the magnetic field in the direction of the second magnetic field, but only the external magnetic field. Thus, the influence of the external magnetic field can be easily reduced by comparing the first magnetoelectric conversion element and the second magnetoelectric conversion element.
  • the current sensor of the present invention is a current sensor for detecting a current path through which a current to be measured flows and a magnetic field of an induced magnetic field generated by the current flowing through the current path, and surrounds the current path and is provided with a gap.
  • the angle formed by the first magnetosensitive direction detected by the conversion element, the direction of the magnetic field that is the induction magnetic field applied to the second magnetoelectric conversion element, and the second magnetosensitive direction detected by the second magnetoelectric conversion element The angle between the current path and the front And the capacitance of the overall between the first magneto-electric transducer, is characterized
  • the angle formed between the direction of the first magnetic field and the first magnetosensitive direction is different from the angle formed between the direction of the second magnetic field and the second magnetosensitive direction.
  • the output values detected by the two magnetoelectric conversion elements are different, and the difference between the output values detected by the two magnetoelectric conversion elements can be calculated by an arithmetic device and compared.
  • the total capacitance between the current path and the first magnetoelectric conversion element is equal to the total capacitance between the current path and the second magnetoelectric conversion element. It is possible to accurately cancel the influence of noise. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide a current sensor that can measure a current value with high accuracy.
  • the first magnetoelectric conversion element and the second magnetoelectric conversion element are disposed in the thickness direction of the magnetic core and are equidistant from the current path. It is characterized by being arranged side by side.
  • the current sensor of the present invention is arranged side by side so that the first magnetoelectric transducer and the second magnetoelectric transducer arranged in the thickness direction of the magnetic core are equidistant from the current path. Therefore, the total capacitance between the current path and the first magnetoelectric conversion element and the total capacitance between the current path and the second magnetoelectric conversion element can be made more equal. it can. For this reason, when the difference between the different output values detected by the two magnetoelectric conversion elements is calculated by the calculation device, it is possible to subtract the influence of noise caused by the capacitance more accurately. As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
  • the current sensor of the present invention is characterized in that the direction of the magnetic field and the first magnetic sensing direction are parallel, and the direction of the magnetic field and the second magnetic sensing direction are parallel.
  • the current sensor of the present invention since the direction of the magnetic field and the first magnetosensitive direction are parallel and the direction of the magnetic field and the second magnetosensitive direction are parallel, the current sensor of the present invention has the first magnetoelectric conversion element.
  • the induced magnetic fields received by the second and second magnetoelectric conversion elements are the same, and the external magnetic fields received by the first and second magnetoelectric conversion elements at different angles are different.
  • the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced.
  • the distance and the facing area between the current path and the first magnetoelectric conversion element and the distance and the facing area between the current path and the second magnetoelectric conversion element are equal.
  • the distance and the facing area between the magnetic core and the first magnetoelectric conversion element are equal to the distance and the facing area between the magnetic core and the second magnetoelectric conversion element.
  • the distance between the current path, the first magnetoelectric conversion element, and the second magnetoelectric conversion element and the facing area are equal, and the magnetic core, the first magnetoelectric conversion element, and the first magnetoelectric conversion element Since the distance and the facing area between the two magnetoelectric conversion elements are equal, the capacitances of the respective magnetoelectric conversion elements and current paths, and the respective magnetoelectric conversion elements and the magnetic core are equal. As a result, it is easy to make the total capacitance of each magnetoelectric conversion element equal when manufacturing a current sensor, and the influence of noise caused by electrostatic coupling can be further reduced. .
  • the angle formed by the direction of the first magnetic field and the first magnetic sensing direction is different from the angle formed by the direction of the second magnetic field and the second magnetic sensitive direction. Since the total capacitance between the magnetoelectric transducers and the total capacitance between the current path and the second magnetoelectric transducer are equal, different output values detected by the two magnetoelectric transducers When the difference is calculated by the calculation device, the influence of noise caused by the capacitance can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
  • FIG. 2A and 2B are diagrams illustrating the current sensor according to the first embodiment of the present invention, in which FIG. 2A is a side view seen from the X1 side shown in FIG. 1, and FIG. 2B is a side view seen from the X2 side shown in FIG.
  • FIG. 2C is a top view seen from the Z1 side shown in FIG.
  • FIG. 6A is a front view seen from the Y2 side shown in FIG. 5 and FIG. 6B is a side view seen from the X1 side shown in FIG.
  • FIG. 6C is a top view seen from the Z1 side shown in FIG.
  • It is the schematic diagram which showed the direction of the induction magnetic field in the current sensor of 2nd Embodiment of this invention, and the magnetosensitive direction of a magnetoelectric conversion element.
  • FIG. 6A is a front view seen from the Y2 side shown in FIG. 5
  • FIG. 6B is a side view seen from the X1 side shown in FIG.
  • FIG. 6C is a top view seen from the Z1 side shown in FIG.
  • It is the schematic diagram which showed the direction of the induction magnetic field in the current
  • FIG. 10A is a front view seen from the Y2 side shown in FIG. 9 and FIG. 10B is a side view seen from the X1 side shown in FIG.
  • FIG. 10C is a top view seen from the Z1 side shown in FIG.
  • It is the schematic diagram which showed the electrostatic capacitance in the current sensor of 3rd Embodiment of this invention. It is the schematic diagram which showed the direction of the induction magnetic field in the current sensor of 3rd Embodiment of this invention, and the magnetosensitive direction of a magnetoelectric conversion element.
  • FIG. 13A is a diagram illustrating a modification of the current sensor according to the first embodiment of the present invention
  • FIG. 13A is a modification 1 in which the arrangement position of the magnetoelectric conversion element is changed
  • FIG. 13B is a diagram of the magnetoelectric conversion element; It is the modification 2 which changed the arrangement position.
  • FIG. 14A is a schematic diagram illustrating a modification of the current sensor according to the first embodiment and the second embodiment of the present invention, and FIG. 14A is a modification 3 in which the arrangement position of the magnetoelectric conversion element according to the first embodiment is changed.
  • FIG. 14B is the modification 4 which changed the arrangement position of the magnetoelectric conversion element of 2nd Embodiment. It is a figure explaining the modification of the current sensor of 1st Embodiment of this invention, and 2nd Embodiment, Comprising:
  • FIG. 15A is the modification 5 which changed the electric current path and magnetic body core of 1st Embodiment, FIG.
  • FIG. 15B is a sixth modification in which the current path and the magnetic core of the second embodiment are changed. It is a figure explaining the modification of the current sensor of 2nd Embodiment of this invention, Comprising: It is the current sensor of the modification 9 which changed the arrangement position of the magnetoelectric conversion element.
  • FIG. 17A is a diagram illustrating a modification of the current sensor according to the third embodiment of the present invention, and FIG. 17A is a modification 10 in which the arrangement position of the magnetoelectric transducer according to the third embodiment is changed, and FIG. This is a modified example 11 in which the arrangement position of the third embodiment is changed. It is the figure which showed schematically the structure of the current detector in the prior art example of patent document 1.
  • FIG. 17A is a diagram illustrating a modification of the current sensor according to the third embodiment of the present invention
  • FIG. 17A is a modification 10 in which the arrangement position of the magnetoelectric transducer according to the third embodiment is changed
  • FIG. This is a modified example 11 in which the arrangement position
  • FIG. 1 is a perspective view illustrating a current sensor 101 according to the first embodiment of the present invention.
  • 2A and 2B are diagrams for explaining the current sensor 101 according to the first embodiment of the present invention.
  • FIG. 2A is a side view seen from the X1 side shown in FIG. 1
  • FIG. 2B is a diagram showing X2 shown in FIG. 2C is a side view seen from the side
  • FIG. 2C is a top view seen from the Z1 side shown in FIG.
  • FIG. 3 is a schematic diagram showing capacitance in the current sensor according to the first embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing the direction of the induced magnetic field and the magnetosensitive direction of the magnetoelectric transducer 13 in the current sensor according to the first embodiment of the present invention.
  • the current sensor 101 includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB in a circular ring shape.
  • Core 11 two magnetoelectric conversion elements 13 (first magnetoelectric conversion element 13 ⁇ / b> A and second magnetoelectric conversion element 13 ⁇ / b> B) that detect magnetism of an induced magnetic field generated by a current flowing in current path CB, and a first magnetoelectric conversion
  • an arithmetic unit 17 that calculates a difference in output between the element 13A and the second magnetoelectric transducer 13B.
  • the dielectric 14 (the first dielectric 14A and the second dielectric 14B) provided between the current path CB and the magnetic core 11, the first magnetoelectric conversion element 13A, the second magnetoelectric The board
  • substrate 9 which mounts the conversion element 13B and the arithmetic unit 17 is provided.
  • the substrate 9 is provided with a wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B to the arithmetic unit 17.
  • the magnetic core 11 is made of a soft magnetic material, such as permalloy (Fe—Ni alloy), and is formed in a circular ring shape as shown in FIGS. 1 and 2.
  • the first gap K11 is provided, and the second gap K12 is provided on the side facing the first gap K11 and the current path CB.
  • the magnetic body core 11 is arrange
  • the current path CB and the magnetic core 11 are fixed by using a dielectric 14 described later, or by holding the current path CB on the magnetic core 11 using a holding member or the like (not shown). Can be easily achieved.
  • the first gap K11 and the second gap K12 are formed in the same size and shape, and the first gap K11 and the second gap K12 are connected to the current path CB.
  • the current path CB is arranged so as to be symmetric with respect to the central axis Aj.
  • the magnetic core 11 is formed in a circular ring shape, but the opposing surfaces forming the first gap K11 or the second gap K12 are formed so as to be parallel, A magnetic field (first magnetic field direction M11 or second magnetic field direction M12 described later) in the first gap K11 or the second gap K12 is a parallel magnetic field.
  • permalloy Fe—Ni alloy
  • Amorphous magnetic alloy, oxide ferrite, etc. may be used.
  • the magnetoelectric conversion element 13 is a current sensor that detects magnetism generated when a current flows through the current path CB.
  • the magnetoelectric conversion element 13 is a magnetoresistive element (GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect).
  • GMR Magnetoresistive element
  • an antiferromagnetic layer is formed of an ⁇ -Fe 2 O 3 layer
  • a pinned layer is formed of a NiFe layer
  • an intermediate layer is formed of a Cu layer
  • a free layer is formed of a NiFe layer.
  • a GMR element is produced on a silicon substrate, and the cut GMR chip is packaged with a thermosetting synthetic resin. As shown in FIGS.
  • the magnetoelectric conversion element 13 includes two magnetoelectric conversion elements 13, that is, a first magnetoelectric conversion element 13A and a second magnetoelectric conversion element 13B. Note that the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B have the same outer shape (packaging size).
  • first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are mounted on a substrate 9 such as a printed circuit board (PCB) as shown in FIG. 1 and FIG.
  • the first magnetoelectric conversion element 13A is disposed in the gap K11, and the second magnetoelectric conversion element 13B is disposed in the second gap K12.
  • C1 C 13 + C 31 ⁇ C 11 / (C 31 + C 11) + C 32 ⁇ C 12 / (C 32 + C 12)
  • the capacitance between the second magneto-electric conversion element 13B and the magnetic core 11 is generated as C 21 and C 22, the capacitance between the second magneto-electric conversion element 13B and the current path CB There occurs as C 23, as a result, the electrostatic capacity C2 of the total between the current paths CB and the second electromagnetic element 13B is as follows.
  • C2 C 23 + C 31 ⁇ C 21 / (C 31 + C 21) + C 32 ⁇ C 22 / (C 32 + C 22)
  • the magnetic sensing direction detected by the first magnetoelectric conversion element 13A is arranged to be the first magnetic sensing direction S11, and the sensitivity detected by the second magnetoelectric conversion element 13B. It arrange
  • the magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric transducer 13 is positive.
  • the direction of the induced magnetic field in the first gap K11 in which the first magnetoelectric conversion element 13A is disposed is the first magnetic field direction M11, and the second magnetoelectric conversion element 13B.
  • the direction of the induced magnetic field in the second gap K12 in which is disposed is the second magnetic field direction M12.
  • the angle formed by the first magnetic direction S11 detected by the first magnetoelectric conversion element 13A and the direction M11 of the first magnetic field of the induced magnetic field applied to the first magnetoelectric conversion element 13A that is, 0 °
  • the angle formed by the second magnetic direction S12 detected by the second magnetoelectric conversion element 13B and the direction M12 of the second magnetic field of the induced magnetic field applied to the magnetoelectric conversion element 13B that is, 180 °.
  • the calculation device 17 calculates the difference between the output values detected by the two magnetoelectric conversion elements 13 (13A, 13B). Can be compared.
  • the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A and the total capacitance between the current path CB and the second magnetoelectric conversion element 13B is adjusted to be equal.
  • the electrostatic capacitance added to each magnetoelectric conversion element 13 (13A, 13B) can be accurately subtracted.
  • the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
  • two dielectrics 14, that is, the first dielectric 14 ⁇ / b> A and the second dielectric are provided between the current path CB and the magnetic core 11.
  • the dielectric 14B is provided.
  • the dielectric constant and size of the dielectric 14 the first dielectric 14A and the second dielectric 14B
  • the total current between the current path CB and the first magnetoelectric transducer 13A is changed.
  • the above-described adjustment to make the capacitance C1 equal to the total capacitance C2 between the current path CB and the second magnetoelectric transducer 13B can be easily performed, and the respective total capacitance (C1 and C2). ) Can be made more equal.
  • the material of the dielectric 14 is not limited, and may be a synthetic resin or an oxide, and may be a metal if it is non-magnetic. Further, as shown in FIG. 2C, the thicknesses of the two dielectrics 14 (the first dielectric 14A and the second dielectric 14B) are made the same and press-fitted between the current path CB and the magnetic core 11. In this arrangement, the dielectric 14 fixes the current path CB and plays a role of positioning the current path CB at the center of the magnetic core 11, and consequently the current path CB and the two magnetoelectric transducers 13 (13 ⁇ / b> A, 13 ⁇ / b> B). ) Is the same distance from each other. Further, in the adjustment described above, it is also performed by slightly moving the arrangement position of the dielectric 14.
  • the first magnetic field direction M11 and the first magnetic sensing direction S11 are parallel, and the second magnetic field direction M12 and the second magnetic sensitive direction S12. Are arranged in parallel to the first gap K11 and the second gap K12, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B.
  • the induction magnetic fields received by the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are the same, and the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are at different angles.
  • the external magnetic field received by each will be different.
  • the influence of the external magnetic field can be canceled and the influence from the external magnetic field can be easily reduced.
  • the first gap K11 and the second gap so that the first magnetic field direction M11 and the second magnetic field direction M12 are opposite to each other.
  • K12 is provided in the magnetic core 11.
  • the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are arranged, and a first feeling parallel to the first magnetic field direction M11 is provided.
  • the magnetic direction S11 and the second magnetic sensing direction S12 parallel to the second magnetic field direction M12 are opposite to each other. As a result, the output value of one magnetoelectric conversion element 13 becomes a positive value and the output value of the other magnetoelectric conversion element 13 becomes a negative value.
  • the output value of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element The maximum difference value with the output value of 13B is obtained.
  • the sensitivity of the current sensor 101 can be increased by calculating the difference value between the outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B by the calculation device 17.
  • the arithmetic device 17 described above is mounted on the substrate 9 and is not shown in detail, the first magnetoelectric conversion element 13A, the second magnetoelectric conversion element 13B, and the electric Are connected, and a difference between outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B is calculated.
  • the arithmetic unit 17 includes a semiconductor integrated circuit (IC: IC) for processing and calculating electrical signals from the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B. Integrated Circuit).
  • the arithmetic device 17 is mounted on the substrate 9 on which the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are mounted. However, the arithmetic device 17 is mounted on another substrate or another electronic device, May be connected.
  • the first magnetoelectric conversion element is formed in the first gap K11 and the second gap K12 formed in the same size and shape. Since the 13A and the second magnetoelectric conversion element 13B are arranged so as to be positioned at the center of each gap, the distance between the magnetic core 11 and the first and second magnetoelectric conversion elements 13A and 13B is Are equal. Also, since the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are formed with the same outer shape (packaging size), the magnetic core 11, the first magnetoelectric conversion element 13A, and the second magnetoelectric conversion The facing area with the element 13B is equal. As a result, the capacitances C 11 and C 21 , and C 12 and C 22 shown in FIG. 3 are equivalent.
  • the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are disposed so as to be symmetric with respect to the central axis Aj of the current path CB. Therefore, the distance between the current path CB and the first and second magnetoelectric conversion elements 13A and 13B is equal. Further, since the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are formed with the same outer shape (packaging size), the current path CB, the first magnetoelectric conversion element 13A, and the second magnetoelectric conversion element The facing area with 13B is equal. As a result, the capacitances C 13 and C 23 shown in FIG. 3 become equivalent.
  • each of the magnetoelectric conversion elements 13 becomes more equal. Therefore, when the current sensor 101 is manufactured, each of the magnetoelectric conversion elements 13 (13A, It is easy to make the total capacitance (C1, C2) of 13B) more equal.
  • the current sensor 101 of the present invention has the angle formed by the first magnetic field direction M11 and the first magnetic sensing direction S11 and the angle formed by the second magnetic field direction M12 and the second magnetic sensing direction S12. Unlikely, the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A and the total capacitance C2 between the current path CB and the second magnetoelectric conversion element 13B are equal.
  • the difference between different output values detected by the two magnetoelectric conversion elements 13 (13A, 13B) is calculated by the calculation device 17, the influence of noise caused by electrostatic coupling can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide the current sensor 101 that can measure the current value with high accuracy.
  • the dielectric 14 (the first dielectric 14A and the second dielectric 14B) is provided between the current path CB and the magnetic core 11, the dielectric 14 (the first dielectric 14A and the second dielectric 14B) is provided.
  • the dielectric constant and size of the dielectric 14B By changing the dielectric constant and size of the dielectric 14B), the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A, and the current path CB and the second magnetoelectric conversion element 13B.
  • the above-described adjustment can be facilitated to make the total electrostatic capacity C2 between and equal to each other, and the total electrostatic capacity (C1 and C2) can be made more equal.
  • the first magnetoelectric transducer 13A and The induction magnetic fields received by the second magnetoelectric conversion element 13B are the same, and the external magnetic fields received by the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B at different angles are different. Accordingly, by comparing the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. . Therefore, it is possible to provide the current sensor 101 that can measure the current value with high accuracy.
  • the first magnetic sensing direction S11 parallel to the first magnetic field direction M11 and the second magnetic field direction M12 parallel to the first magnetic field direction M12.
  • the two magnetic sensing directions S12 are opposite to each other.
  • the output value of one magnetoelectric conversion element 13 becomes a positive value and the output value of the other magnetoelectric conversion element 13 becomes a negative value
  • the output value of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element The maximum difference value with the output value of 13B is obtained.
  • the sensitivity of the current sensor 101 can be increased by calculating the difference value between the outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B by the calculation device 17.
  • the distance and the facing area between the current path CB and the first and second magnetoelectric conversion elements 13A and 13B are equal, and the magnetic core 11, the first and second magnetoelectric conversion elements 13A and 13B, and the second magnetoelectric conversion element. Since the distance to 13B and the facing area are equal, the capacitances of the respective magnetoelectric conversion elements 13 (13A, 13B) and the current path CB, the respective magnetoelectric conversion elements 13 (13A, 13B), and the magnetic core 11 are equivalent. become. As a result, it is easy to make the total capacitance (C1, C2) of the respective magnetoelectric conversion elements 13 (13A, 13B) more equal, and the influence of noise due to electrostatic coupling is further reduced. be able to.
  • FIG. 5 is a perspective view illustrating the current sensor 102 according to the second embodiment of the present invention.
  • 6A and 6B are diagrams illustrating the current sensor 102 according to the second embodiment of the present invention.
  • FIG. 6A is a front view seen from the Y2 side shown in FIG. 5, and
  • FIG. 6B is X1 shown in FIG. 6C is a side view seen from the side, and
  • FIG. 6C is a top view seen from the Z1 side shown in FIG.
  • FIG. 7 is a schematic diagram showing capacitance in the current sensor according to the second embodiment of the present invention.
  • FIG. 8 is a schematic diagram showing the direction of the induced magnetic field and the magnetosensitive direction of the magnetoelectric transducer 23 in the current sensor according to the second embodiment of the present invention.
  • the current sensor 102 of the second embodiment is mainly different from the first embodiment in the arrangement position of the magnetoelectric conversion element 23.
  • symbol is attached
  • the current sensor 102 includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB with a hollow rectangle.
  • the core 21 two magnetoelectric conversion elements 23 (first magnetoelectric conversion element 23A and second magnetoelectric conversion element 23B) for detecting the magnetism of the induced magnetic field generated by the current flowing in the current path CB, and the first magnetoelectric conversion And an arithmetic unit 17 that calculates a difference in output between the element 23A and the second magnetoelectric conversion element 23B.
  • the dielectric 24 (the first dielectric 24A and the second dielectric 24B) provided between the current path CB and the magnetic core 21, the first magnetoelectric transducer 23A, the second magnetoelectric The board
  • substrate 9 which mounts the conversion element 23B and the arithmetic unit 17 is provided.
  • the substrate 9 is provided with a wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B to the arithmetic unit 17.
  • the magnetic core 21 is made of a soft magnetic material, such as Sendust (Fe—Si—Al alloy), and is formed into a hollow rectangle as shown in FIGS. 5 and 6, and the magnetic core 21 has one side thereof.
  • the first gap K21 and the second gap K22 are provided on the other side.
  • the magnetic body core 21 is arrange
  • the first gap K21 and the second gap K22 are formed in the same size and shape, and the first gap K21 and the second gap K22 are 90 ° with respect to the central axis Aj of the current path CB.
  • the current path CB is arranged so as to be equidistant.
  • the current path CB is easily disposed and fixed by using the dielectric 14 described later or by holding the current path CB on the magnetic core 11 using a holding member or the like (not shown). it can.
  • Sendust Fe—Si—Al alloy
  • Fe—Si—Al alloy any soft magnetic material may be used.
  • Other ferrous materials such as permalloy (Fe—Ni alloy), silicon steel, etc. Amorphous magnetic alloy, oxide ferrite, etc. may be used.
  • the magnetoelectric conversion element 23 is a current sensor for detecting magnetism generated when a current flows in the current path CB.
  • a magnetoresistive element GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect) Say.
  • GMR element for example, an antiferromagnetic layer is formed of an ⁇ -Fe 2 O 3 layer, a pinned layer is formed of a NiFe layer, an intermediate layer is formed of a Cu layer, and a free layer is formed of a NiFe layer.
  • a GMR element is produced on a silicon substrate, and the cut out GMR chip is packaged with a thermosetting synthetic resin. Further, as shown in FIGS.
  • the magnetoelectric conversion element 23 includes two magnetoelectric conversion elements 23, that is, a first magnetoelectric conversion element 23 ⁇ / b> A and a second magnetoelectric conversion element 23 ⁇ / b> B. Note that the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B have the same outer shape (packaging size).
  • the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are mounted on the substrate 9, and the first magnetoelectric conversion element 23A is arranged in the first gap K21.
  • the second magnetoelectric conversion element 23B is disposed in the second gap K22.
  • C3 C 16 + C 34 ⁇ C 14 / (C 34 + C 14) + C 35 ⁇ C 15 / (C 35 + C 15)
  • the capacitance between the second magneto-electric conversion element 23B and the magnetic core 21 is produced as a C 24 and C 25, the capacitance between the second magneto-electric conversion element 23B and the current path CB There occurs as C 26, as a result, the capacitance C4 of the total between the current paths CB and the second electromagnetic element 23B is as follows.
  • C4 C 26 + C 34 ⁇ C 24 / (C 34 + C 24) + C 35 ⁇ C 25 / (C 35 + C 25)
  • the magnetic sensing direction detected by the first magnetoelectric conversion element 23A is arranged to be the first magnetic sensing direction S21, and the sensitivity detected by the second magnetoelectric conversion element 23B. It arrange
  • the magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric conversion element 23 is positive.
  • the direction of the induced magnetic field in the first gap K21 in which the first magnetoelectric conversion element 23A is disposed is the first magnetic field direction M21, and the second magnetoelectric conversion element 23B.
  • the direction of the induced magnetic field in the second gap K22 in which is disposed is the second magnetic field direction M22.
  • the angle formed by the first magnetic field direction M21 of the first magnetic field applied to the first magnetoelectric transducer 23A and the first magnetosensitive direction S21 detected by the first magnetoelectric transducer 23A that is, 0 °
  • This is different from the angle formed by the direction M22 of the second magnetic field of the induced magnetic field applied to the magnetoelectric conversion element 23B and the second magnetosensitive direction S22 detected by the second magnetoelectric conversion element 23B, that is, 90 °.
  • the difference between the output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) is calculated by the arithmetic unit 17. Can be compared.
  • the capacitance C4 is adjusted to be equal.
  • the electrostatic capacitance added to each magnetoelectric conversion element 23 (23A, 23B) can be accurately subtracted.
  • the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
  • two dielectrics 24, that is, the first dielectric 24A and the second dielectric are provided between the current path CB and the magnetic core 21.
  • the dielectric 24B is provided.
  • the dielectric constant and size of the dielectric 24 (the first dielectric 24A and the second dielectric 24B)
  • the total current between the current path CB and the first magnetoelectric transducer 23A is changed.
  • the above-described adjustment can be easily performed to make the capacitance C3 equal to the total capacitance C4 between the current path CB and the second magnetoelectric transducer 23B, and each total capacitance (C3 and C4) can be made more equal.
  • the material of the dielectric 24 is not limited, and may be a synthetic resin or an oxide, and may be a metal if it is non-magnetic. Further, as shown in FIG. 6C, the thicknesses of the two dielectrics 24 (the first dielectric 24A and the second dielectric 24B) are made the same and press-fitted between the current path CB and the magnetic core 21. In this arrangement, the dielectric 24 fixes the current path CB and plays a role of positioning the current path CB at the center of the magnetic core 21, and thus the current path CB and the two magnetoelectric transducers 23 (23 ⁇ / b> A, 23 ⁇ / b> B). ) Is the same distance from each other.
  • the first magnetic field direction M21 and the first magnetic sensing direction S21 are parallel, and the second magnetic field direction M22 and the second magnetic sensitive direction S22.
  • the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are arranged in the first gap K21 and the second gap K22.
  • the induced magnetic field received by the second magnetoelectric conversion element 23B that is, the magnetic field of the second magnetic field direction M22 becomes 0, and the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B have different angles.
  • the external magnetic field received at will be different.
  • the 1st magnetoelectric conversion element is made into the 1st space
  • the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are formed with the same outer shape (packaging size), the magnetic core 21, the first magnetoelectric conversion element 23A, and the second magnetoelectric conversion The area facing the element 23B is equal. As a result, the capacitances C 14 and C 24 , and C 15 and C 25 shown in FIG. 7 are equivalent.
  • the first gap K21 and the second gap K22 are arranged so as to be 90 ° and equidistant from the central axis Aj of the current path CB. Therefore, the distance between the current path CB and the first and second magnetoelectric conversion elements 23A and 23B can be arranged equally. Further, since the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are formed with the same outer shape (packaging size), the current path CB, the first magnetoelectric conversion element 23A, and the second magnetoelectric conversion element The opposing area to 23B is equal. As a result, the capacitances C 16 and C 26 shown in FIG. 7 become equivalent.
  • the capacitances added to the respective magnetoelectric conversion elements 23 become more equal. Therefore, when the current sensor 102 is manufactured, the respective magnetoelectric conversion elements 23 (23A, 23A, It is easy to make the total capacitance (C3, C4) of 23B) more equal.
  • the current sensor 102 of the present invention includes the angle formed by the first magnetic field direction M21 and the first magnetic sensing direction S21, and the angle formed by the second magnetic field direction M22 and the second magnetic sensitive direction S22. Unlikely, the total capacitance C3 between the current path CB and the first magnetoelectric conversion element 23A is equal to the total capacitance C4 between the current path CB and the second magnetoelectric conversion element 23B.
  • the difference between the different output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) is calculated by the calculation device 17, the influence of noise caused by electrostatic coupling can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide the current sensor 102 that can measure the current value with high accuracy.
  • the dielectric 24 (first dielectric 24A and second dielectric 24B) is provided between the current path CB and the magnetic core 21, the dielectric 24 (first dielectric 24A and second dielectric 24A) is provided.
  • the dielectric constant and size of the dielectric 24B By changing the dielectric constant and size of the dielectric 24B), the total capacitance C3 between the current path CB and the first magnetoelectric conversion element 23A, and the current path CB and the second magnetoelectric conversion element 23B are changed.
  • the above-described adjustment to make the total electrostatic capacity C4 between the two terminals equal to each other can be facilitated, and the respective total electrostatic capacity (C3 and C4) can be made more equal.
  • the second magnetoelectric conversion element 23B receives the magnetic field.
  • the induced magnetic field becomes 0, that is, the magnetic field of the second magnetic field direction M22 is not felt, and the external magnetic fields received at different angles by the first magnetoelectric transducer 23A and the second magnetoelectric transducer 23B are different.
  • the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
  • the distance and the facing area between the current path CB and the first and second magnetoelectric conversion elements 23A and 23B are equal, and the magnetic core 21, the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element Since the distance and the facing area to 23B are equal, the respective magnetoelectric transducers 23 (23A, 23B) and current paths CB, the respective magnetoelectric transducers 23 (23A, 23B) and the magnetic core 21 have the same capacitance. become. As a result, the electrostatic capacitance, which is the stray capacitance superimposed on each of the magnetoelectric conversion elements 23 (23A, 23B), becomes more equal. Therefore, when the current sensor 102 is manufactured, each of the magnetoelectric conversion elements 23 (23A) 23B), it is easy to make the total capacitance (C3, C4) more equal, and the influence of noise caused by electrostatic coupling can be further reduced.
  • FIG. 9 is a perspective view illustrating the current sensor 103 according to the third embodiment of the present invention.
  • 10A and 10B are diagrams illustrating the current sensor 103 according to the third embodiment of the present invention.
  • FIG. 10A is a front view seen from the Y2 side shown in FIG. 9, and
  • FIG. 10B is X1 shown in FIG. 10C is a side view seen from the side, and
  • FIG. 10C is a top view seen from the Z1 side shown in FIG. 9.
  • the second substrate 39B and the second magnetoelectric transducer 33B are omitted in FIG. 10C.
  • FIG. 11 is a schematic diagram illustrating the capacitance in the current sensor according to the third embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating the capacitance in the current sensor according to the third embodiment of the present invention.
  • the current sensor 103 of the third embodiment is mainly different from the first embodiment in the arrangement positions of the gap K33 of the magnetic core 31 and the magnetoelectric conversion element 33.
  • symbol is attached
  • the current sensor 103 includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB with a hollow rectangle.
  • Core 31 two magnetoelectric conversion elements 33 (first magnetoelectric conversion element 33 ⁇ / b> A and second magnetoelectric conversion element 33 ⁇ / b> B) for detecting the magnetism of the induced magnetic field generated by the current flowing in current path CB, and the first magnetoelectric conversion And an arithmetic device 17 that calculates a difference in output between the element 33A and the second magnetoelectric conversion element 33B.
  • first substrate 39A on which the first magnetoelectric conversion element 33A and the arithmetic unit 17 are mounted, and a second substrate 39B on which the second magnetoelectric conversion element 33B is mounted are provided.
  • a wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B to the arithmetic unit 17 is provided on the first substrate 39A and the second substrate 39B. Is provided.
  • the magnetic core 31 is made of a soft magnetic material, such as permalloy (Fe—Ni alloy), and is formed into a hollow rectangle as shown in FIGS. 9 and 10, and the magnetic core 31 has a gap on one side thereof. K33 is provided and configured. And the magnetic body core 31 is arrange
  • permalloy Fe—Ni alloy
  • Sendust Fe—Si—Al alloy
  • silicon steel etc.
  • other non-ferrous materials such as non-ferrous Amorphous magnetic alloy, oxide ferrite, etc. may be used.
  • the magnetoelectric conversion element 33 is a current sensor for detecting magnetism generated when a current flows through the current path CB.
  • the magnetoelectric conversion element 33 is a magnetoresistive element (GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect).
  • GMR Magnetoresistive element
  • an antiferromagnetic layer is formed of an ⁇ -Fe 2 O 3 layer
  • a pinned layer is formed of a NiFe layer
  • an intermediate layer is formed of a Cu layer
  • a free layer is formed of a NiFe layer.
  • a GMR element is produced on a silicon substrate, and the cut out GMR chip is packaged with a thermosetting synthetic resin.
  • the magnetoelectric conversion element 33 includes two magnetoelectric conversion elements 33, that is, a first magnetoelectric conversion element 33A and a second magnetoelectric conversion element 33B. Note that the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B have the same outer shape (packaging size).
  • the first magnetoelectric conversion element 33A is mounted on a first substrate 39A such as a printed circuit board (PCB), and the second magnetoelectric conversion element 33B is printed wiring. It is mounted on a second substrate 39B such as a printed circuit board (PCB), and is arranged in the gap K33 in the thickness direction of the magnetic core 31 and arranged vertically so as to be equidistant from the current path CB. It is arranged.
  • a first substrate 39A such as a printed circuit board (PCB)
  • PCB printed circuit board
  • C5 C 19 + C 37 ⁇ C 17 / (C 37 + C 17) + C 37 ⁇ C 18 / (C 37 + C 18)
  • the capacitance between the second magneto-electric conversion element 33B and the magnetic core 31 is produced as a C 27 and C 28, the capacitance between the second magneto-electric conversion element 33B and the current path CB There occurs as C 29, as a result, the capacitance C6 of the total between the current paths CB and second magnetoelectric conversion element 33B are as the following equation.
  • C6 C 29 + C 37 ⁇ C 27 / (C 37 + C 27) + C 37 ⁇ C 28 / (C 37 + C 28)
  • the magnetic sensing direction detected by the first magnetoelectric conversion element 33A is arranged to be the first magnetic sensing direction S31, and the sensitivity detected by the second magnetoelectric conversion element 33B.
  • the magnetic direction is arranged to be a second magnetic sensing direction S32 opposite to the first magnetic sensing direction S31.
  • the magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric conversion element 33 is positive.
  • the direction of the magnetic field in the gap K33 in which the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are disposed is a magnetic field direction M33 that is an induction magnetic field.
  • the angle formed by the direction M33 of the magnetic field applied to the first magnetoelectric conversion element 33A and the first magnetosensitive direction S31 detected by the first magnetoelectric conversion element 33A that is, 0 °
  • the second magnetoelectric conversion element 33B Is different from an angle formed by the direction M33 of the magnetic field applied to the second magnetic sensing direction S32 detected by the second magnetoelectric transducer 33B, that is, 180 °.
  • the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) are different, so the difference between the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) is calculated by the arithmetic unit 17. Can be compared.
  • the capacitance C6 is adjusted to be equal. Thereby, the electrostatic capacitance added to each magnetoelectric conversion element 33 (33A, 33B) can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Further, this adjustment is performed by slightly moving the arrangement position of the current path CB, or by inserting a dielectric between the magnetoelectric conversion element 33 and the magnetic core 31 in some cases.
  • positioned in the thickness direction of the magnetic body core 31 are electric current. Since they are arranged vertically so as to be equidistant with respect to the path CB, the total capacitance C5 between the current path CB and the first magnetoelectric transducer 33A, the current path CB and the second path The total capacitance C6 between the magnetoelectric conversion element 33B can be made more equal.
  • the magnetic field direction M33 and the first magnetic sensing direction S31 are parallel, and the magnetic field direction M33 and the second magnetic sensing direction S32 are parallel. Therefore, the induction magnetic fields received by the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are the same as absolute values, and the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are respectively External magnetic fields received at different angles will be different. Thereby, by comparing the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
  • the current sensor 103 of the present invention is different in the angle formed between the magnetic field direction M33 and the first magnetic sensing direction S31 and the angle formed between the magnetic field direction M33 and the second magnetic sensitive direction S32.
  • the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) are different, and the difference between the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) is calculated by the arithmetic unit 17 and compared. it can.
  • the total capacitance C5 between the current path CB and the first magnetoelectric conversion element 33A is equal to the total capacitance C6 between the current path CB and the second magnetoelectric conversion element 33B.
  • the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B arranged in the thickness direction of the magnetic core 31 are arranged vertically so as to be equidistant from the current path CB.
  • the total capacitance C5 between the current path CB and the first magnetoelectric conversion element 33A and the total capacitance C6 between the current path CB and the second magnetoelectric conversion element 33B are made more equal. be able to. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
  • the first magnetoelectric transducer 33A and the second magnetoelectric element 33A since the magnetic field direction M33 and the first magnetic sensing direction S31 are parallel, and the magnetic field direction M33 and the second magnetic sensing direction S32 are parallel, the first magnetoelectric transducer 33A and the second magnetoelectric element 33A.
  • the induction magnetic fields received by the conversion element 33B are the same in absolute value, and the external magnetic fields received by the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B at different angles are different. Thereby, by comparing the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
  • FIG. 13 is a diagram for explaining a modification of the current sensor 101 according to the first embodiment of the present invention.
  • FIG. 13A shows a modification 1 in which the arrangement position of the magnetoelectric transducer 13 (13A, 13B) is changed.
  • FIG. 13B is a current sensor C101 of Modification 2 in which the arrangement position of the magnetoelectric conversion element 13 (13B) is changed.
  • FIG. 14 is a schematic diagram for explaining a modification of the current sensors (101, 102) of the first embodiment and the second embodiment of the present invention.
  • FIG. 14A shows the magnetoelectric conversion element 13 of the first embodiment.
  • FIG. 14B is a fourth modification in which the arrangement position of the magnetoelectric transducer 23 of the second embodiment is changed.
  • FIG. 15 is a diagram for explaining a modification of the current sensors (101, 102) according to the first and second embodiments of the present invention.
  • FIG. 15A shows the current path CB and the magnetic body according to the first embodiment.
  • FIG. 15B is a sixth modification in which the core 11 is changed, and
  • FIG. 15B is a sixth modification in which the current path CB and the magnetic core 21 of the second embodiment are changed.
  • FIG. 16 is a diagram for explaining a modification of the current sensor 102 according to the second embodiment of the present invention, and is a current sensor D102 of the modification 9 in which the arrangement position of the magnetoelectric conversion element 23 is changed.
  • FIG. 17 is a top view illustrating a modification of the current sensor 103 according to the third embodiment of the present invention.
  • FIG. 17A illustrates a modification 10 in which the arrangement position of the magnetoelectric transducer 33 according to the third embodiment is changed.
  • FIG. 17B is a current sensor D123 of Modification 11 in which the arrangement position of the magnetoelectric conversion element 33 of the third embodiment is changed.
  • the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are positioned at the centers of the respective gaps (K11, K12) of the first gap K11 and the second gap K12. by disposing the capacitance of the magnetic core 11 and the first electromagnetic element 13A and the second magneto-electric conversion element 13B, C 11 and C 21, and C 12 and preferably as C 22 is equal to However, they may be shifted from each other. As shown in FIG. 13A, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are relative to each of the first gap K11 and the second gap K12 (K11, K12). If the target positional relationship is made equal, the same effect is obtained.
  • the magnetic core 11 is configured such that the first gap K11 and the second gap K12 are symmetrical with respect to the central axis Aj of the current path CB.
  • the arrangement angle with the second gap K12 may be changed.
  • the arrangement angle of the magnetic core C11 with the first gap K11 and the second gap CK12 is 135 °.
  • the first magnetic field direction M11 and the first magnetic sensing direction S11 are parallel, and the second magnetic field direction M12 and the second magnetic sensing direction S12 are parallel.
  • the magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are preferably arranged and configured, the magnetosensitive directions of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B may be changed.
  • the angle formed by the first magnetic field direction M11 of the induced magnetic field applied to the first magnetoelectric transducer 13A and the first magnetosensitive direction CS11 detected by the first magnetoelectric transducer 13A that is, 15 °.
  • the angle formed by the second magnetic direction CS12 detected by the second magnetoelectric conversion element 13B and the direction M12 of the second magnetic field of the induced magnetic field applied to the second magnetoelectric conversion element 13B that is, 75 °. .
  • the first magnetic field direction M21 and the first magnetosensitive direction S21 are parallel, and the second magnetic field direction M22 and the second magnetic sensitive direction S22 are orthogonal to each other.
  • the magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are preferably arranged, but may be configured by changing the magnetic sensitive direction of the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B. .
  • the angle formed by the first magnetic field direction M21 of the induced magnetic field applied to the first magnetoelectric transducer 23A and the first magnetosensitive direction CS21 detected by the first magnetoelectric transducer 23A that is, 30 °.
  • the angle formed by the second magnetic direction CS22 detected by the second magnetoelectric conversion element 23B and the direction M22 of the second magnetic field of the induced magnetic field applied to the second magnetoelectric conversion element 23B that is, 60 °. .
  • the current path CB has a circular cross section, but a current path CCB having a rectangular cross section may be used. In that case, as shown to FIG. 15A, it is good to make the magnetic body core C12 of the current sensor C501 into an elliptical shape. Similarly, as shown in FIG. 15B, the magnetic core C21 of the current sensor C602 may be rectangular.
  • two dielectrics are used between the current path CB and the magnetic cores (11, 21). You may comprise using the above dielectric material. Or the structure which does not use a dielectric material may be sufficient.
  • ⁇ Modification 8> In the first embodiment and the second embodiment, two dielectrics (14, 24) are used between the current path CB and the magnetic cores (11, 21). However, the magnetoelectric conversion element (13 23) and the magnetic core (11, 21) may be configured using a dielectric. In this case, the same effect can be obtained.
  • the first gap K21 and the second gap K22 are arranged to be 90 ° with respect to the central axis Aj of the current path CB.
  • the first gap CK21 and the second gap CK22 may be disposed in the vicinity of the rectangular corner of the magnetic core C71. For this reason, since the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B can be disposed close to each other, the external magnetic field is entered at the same timing even when the source of the external magnetic field is relatively close. The influence of the incoming noise can be reduced, and the influence from the external magnetic field can be more reliably reduced.
  • the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are arranged vertically in the thickness direction of the magnetic core 31, but as shown in FIG. 17A, You may arrange

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Abstract

The purpose of the present invention is to provide a current sensor, which is less affected due to noise, and which is capable of performing highly accurate current value measurement. This current sensor is characterized in being provided with: a magnetic material core (11), which is disposed at a position surrounding a current path (CB) having flowing therein a current to be measured, and which is provided with a first gap and a second gap; a first magnetoelectric conversion element (13A), which is provided in the first gap of the magnetic material core; a second magnetoelectric conversion element (13B), which is provided in the second gap of the magnetic material core; and a calculating apparatus, which calculates a difference between output of the first magnetoelectric conversion element and that of the second magnetoelectric conversion element. The current sensor is also characterized in that: an angle formed by the direction of a first magnetic field of an inductive magnetic field applied to the first magnetoelectric conversion element, and the first magnetic sensing direction detected by means of the first magnetoelectric conversion element, and an angle formed by the direction of a second magnetic field of an inductive magnetic field applied to the second magnetoelectric conversion element, and the second magnetic sensing direction detected by means of the second magnetoelectric conversion element are different from each other; and total electrostatic capacitance between the current path and the first magnetoelectric conversion element, and total electrostatic capacitance between the current path and the second magnetoelectric conversion element are equal to each other.

Description

電流センサCurrent sensor
　本発明は、電流路に流れる被測定電流を検出する電流センサに関し、特に電流路に流れる電流によって発生する誘導磁界の磁気を検出する電流センサに関する。 The present invention relates to a current sensor that detects a current to be measured flowing in a current path, and more particularly to a current sensor that detects magnetism of an induced magnetic field generated by a current flowing in a current path.
　各種機器の制御や監視のために、電流路（電線）に流れる被測定電流を検出する電流センサが良く知られている。この種の電流センサとして、電流路を囲み電流路の回りに発生する磁束を集束する磁性体コアと、電流路に電流が流れたときに発生する磁気を検出する磁電変換素子とを用いた電流センサが良く知られている。 A current sensor that detects a measured current flowing in a current path (wire) is well known for controlling and monitoring various devices. As this type of current sensor, a current using a magnetic core that surrounds the current path and focuses the magnetic flux generated around the current path, and a magnetoelectric transducer that detects magnetism generated when current flows in the current path Sensors are well known.
　上述の電流センサの例として、特許文献１では、図１８に示すように、磁性体コア９０４と、磁気センサ（磁電変換素子）９０６と、導体（電流路）９０２に近接して配置される実装配線基板９０９とを含んで構成された電流検出器９００が提案されている。図１８は、特許文献１の従来例における電流検出器９００の構成を概略的に示した図である。図１８に示す電流検出器９００は、実装配線基板９０９に寄生容量調整部９１０を設け、この寄生容量調整部９１０によって、導体９０２と実装配線基板９０９上に配線された配線部９４０との間の寄生容量（浮遊容量）の値を同じ値とすることによって、回路が誤動作することを抑制することができるとしている。 As an example of the above-described current sensor, in Patent Document 1, as shown in FIG. 18, a magnetic core 904, a magnetic sensor (magnetoelectric conversion element) 906, and a conductor (current path) 902 are disposed in the vicinity. A current detector 900 including a wiring board 909 has been proposed. FIG. 18 is a diagram schematically showing a configuration of a current detector 900 in the conventional example of Patent Document 1. In FIG. A current detector 900 shown in FIG. 18 includes a parasitic capacitance adjustment unit 910 provided on the mounting wiring board 909, and the parasitic capacitance adjustment unit 910 causes a connection between the conductor 902 and the wiring unit 940 wired on the mounting wiring board 909. It is said that malfunction of the circuit can be suppressed by setting the value of the parasitic capacitance (stray capacitance) to the same value.
特開２００９－６４８７８号公報JP 2009-64878 A
　しかしながら、特許文献１の従来例の構成では、導体（電流路）９０２と磁気センサ（磁電変換素子）９０６との間にも静電結合があり、この寄生容量（浮遊容量）によって、電流が変化していなくても、導体（電流路）９０２の電位変動があると、磁気センサ（磁電変換素子）９０６の出力値が変動するといった問題があった。このようにして、この出力値の変動、所謂ノイズが付加されるため、電流検出器（電流センサ）９００の測定精度が悪化するという課題があった。 However, in the configuration of the conventional example of Patent Document 1, there is also electrostatic coupling between the conductor (current path) 902 and the magnetic sensor (magnetoelectric conversion element) 906, and the current changes due to this parasitic capacitance (stray capacitance). Even if not, there is a problem that if the potential of the conductor (current path) 902 varies, the output value of the magnetic sensor (magnetoelectric conversion element) 906 varies. Thus, since the fluctuation of the output value, so-called noise is added, there is a problem that the measurement accuracy of the current detector (current sensor) 900 is deteriorated.
　本発明は、上述した課題を解決するもので、ノイズによる影響が低減されて精度の高い電流値の計測ができる電流センサを提供することを目的とする。 The present invention solves the above-described problems, and an object of the present invention is to provide a current sensor capable of measuring a current value with high accuracy by reducing the influence of noise.
　この課題を解決するために、本発明の電流センサは、被測定電流が流れる電流路と、前記電流路に流れる電流によって発生する誘導磁界の磁気を検出する電流センサであって、前記電流路を囲むとともに、第１の空隙と第２の空隙が設けられた磁性体コアと、前記磁性体コアの前記第１の空隙内に設けられた第１の磁電変換素子と、前記磁性体コアの前記第２の空隙内に設けられた第２の磁電変換素子と、前記第１の磁電変換素子と前記第２の磁電変換素子との出力の差分を演算する演算装置と、を備え、前記第１の磁電変換素子に加わる前記誘導磁界の第１磁界の向きと前記第１の磁電変換素子が検出する第１感磁方向とがなす角と、前記第２の磁電変換素子に加わる前記誘導磁界の第２磁界の向きと前記第２の磁電変換素子が検出する第２感磁方向とがなす角と、が異なり、前記電流路と前記第１の磁電変換素子との間の総合の静電容量と、前記電流路と前記第２の磁電変換素子との間の総合の静電容量とが等しいことを特徴としている。 In order to solve this problem, a current sensor according to the present invention is a current sensor for detecting a current path through which a current to be measured flows and a magnetic field of an induced magnetic field generated by a current flowing through the current path. Surrounding the magnetic core provided with the first gap and the second gap, the first magnetoelectric conversion element provided in the first gap of the magnetic core, and the magnetic core A second magnetoelectric conversion element provided in the second gap, and an arithmetic device for calculating a difference in output between the first magnetoelectric conversion element and the second magnetoelectric conversion element, The angle formed by the direction of the first magnetic field applied to the magnetoelectric conversion element and the first magnetosensitive direction detected by the first magnetoelectric conversion element, and the induction magnetic field applied to the second magnetoelectric conversion element The direction of the second magnetic field and the second magnetoelectric transducer detect The angle formed by the two magnetic sensing directions is different, and the total capacitance between the current path and the first magnetoelectric transducer, and between the current path and the second magnetoelectric transducer. The total capacitance is equal.
　これによれば、本発明の電流センサは、第１磁界の向きと第１感磁方向とがなす角と、第２磁界の向きと第２感磁方向とがなす角と、が異なり、電流路と第１の磁電変換素子との間の総合の静電容量と、電流路と第２の磁電変換素子との間の総合の静電容量とが等しいので、２つの磁電変換素子で検出される異なる出力値の差分を演算装置で演算する際に、静電容量に起因するノイズの影響を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。したがって、精度の高い電流値の計測ができる電流センサを提供することができる。 According to this, the current sensor of the present invention is different in the angle formed between the direction of the first magnetic field and the first magnetosensitive direction and the angle formed between the direction of the second magnetic field and the second magnetosensitive direction. Since the total capacitance between the path and the first magnetoelectric conversion element is equal to the total capacitance between the current path and the second magnetoelectric conversion element, it is detected by the two magnetoelectric conversion elements. When the difference between different output values is calculated by the calculation device, the influence of noise caused by the capacitance can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide a current sensor that can measure a current value with high accuracy.
　また、本発明の電流センサは、前記電流路と前記磁性体コアとの間に誘電体を設けることを特徴としている。 The current sensor of the present invention is characterized in that a dielectric is provided between the current path and the magnetic core.
　これによれば、電流路と磁性体コアとの間に誘電体を設けるので、この誘電体により、電流路と第１の磁電変換素子との間の総合の静電容量と、電流路と第２の磁電変換素子との間の総合の静電容量とを等しくすることが容易にでき、それぞれの総合の静電容量をより等しくすることができる。このため、２つの磁電変換素子で検出される異なる出力値の差分を演算装置で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 According to this, since the dielectric is provided between the current path and the magnetic core, this dielectric allows the total capacitance between the current path and the first magnetoelectric transducer, the current path and the first The total capacitance between the two magnetoelectric conversion elements can be easily made equal, and the total capacitance of each can be made more equal. For this reason, when the difference between the different output values detected by the two magnetoelectric conversion elements is calculated by the calculation device, it is possible to subtract the influence of noise caused by the capacitance more accurately. As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、本発明の電流センサは、前記第１磁界の向きと前記第１感磁方向とが平行であり、前記第２磁界の向きと前記第２感磁方向とが平行であることを特徴としている。 In the current sensor according to the present invention, the direction of the first magnetic field and the first magnetosensitive direction are parallel, and the direction of the second magnetic field and the second magnetosensitive direction are parallel. Yes.
　これによれば、本発明の電流センサは、第１磁界の向きと第１感磁方向とが平行であるとともに、第２磁界の向きと第２感磁方向とが平行であるので、第１の磁電変換素子及び第２の磁電変換素子が受けるそれぞれの誘導磁界は同じになり、第１の磁電変換素子及び第２の磁電変換素子がそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子と第２の磁電変換素子とを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 According to this, in the current sensor of the present invention, the first magnetic field direction and the first magnetosensitive direction are parallel, and the second magnetic field direction and the second magnetosensitive direction are parallel. The induced magnetic fields received by the first and second magnetoelectric conversion elements are the same, and the external magnetic fields received by the first and second magnetoelectric conversion elements at different angles are different. Thus, by comparing the first magnetoelectric conversion element and the second magnetoelectric conversion element, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced.
　また、本発明の電流センサは、前記第１磁界の向きと前記第２磁界の向きとが逆向きであることを特徴としている。 The current sensor of the present invention is characterized in that the direction of the first magnetic field is opposite to the direction of the second magnetic field.
　これによれば、第１磁界の向きと平行な第１感磁方向と、第２磁界の向きと平行な第２感磁方向と、が逆向きになるので、一方の磁電変換素子の出力値がプラス値となり、他方の磁電変換素子の出力値がマイナス値となるので、第１の磁電変換素子の出力値と第２の磁電変換素子の出力値との差分値が最大に得られる。このことにより、第１の磁電変換素子と第２の磁電変換素子との出力の差分値を演算装置で演算することで、電流センサの感度を高めることができる。 According to this, since the first magnetosensitive direction parallel to the direction of the first magnetic field and the second magnetosensitive direction parallel to the direction of the second magnetic field are reversed, the output value of one of the magnetoelectric transducers Becomes a positive value and the output value of the other magnetoelectric conversion element becomes a negative value, so that the maximum difference value between the output value of the first magnetoelectric conversion element and the output value of the second magnetoelectric conversion element is obtained. As a result, the sensitivity of the current sensor can be increased by calculating the difference value between the outputs of the first and second magnetoelectric transducers with the computing device.
　また、本発明の電流センサは、前記第１磁界の向きと前記第１感磁方向とが平行であり、前記第２磁界の向きと前記第２感磁方向とが直交することを特徴としている。 The current sensor of the present invention is characterized in that the direction of the first magnetic field and the first magnetosensitive direction are parallel, and the direction of the second magnetic field and the second magnetosensitive direction are orthogonal to each other. .
　これによれば、本発明の電流センサは、第１磁界の向きと第１感磁方向とが平行であるとともに、第２磁界の向きと第２感磁方向とが直交するので、第２の磁電変換素子は第２磁界の向きの磁界を感じなくなり、外部磁場のみを感じるようになる。このことにより、第１の磁電変換素子と第２の磁電変換素子とを比較することで、外部磁場の影響を低減することが容易にできる。 According to this, since the direction of the first magnetic field and the first magnetosensitive direction are parallel to each other and the direction of the second magnetic field and the second magnetosensitive direction are orthogonal to each other, The magnetoelectric transducer no longer feels the magnetic field in the direction of the second magnetic field, but only the external magnetic field. Thus, the influence of the external magnetic field can be easily reduced by comparing the first magnetoelectric conversion element and the second magnetoelectric conversion element.
　また、本発明の電流センサは、被測定電流が流れる電流路と、前記電流路に流れる電流によって発生する誘導磁界の磁気を検出する電流センサであって、前記電流路を囲むとともに、空隙が設けられた磁性体コアと、前記磁性体コアの前記空隙内に設けられた第１の磁電変換素子と、前記磁性体コアの前記空隙内に設けられた第２の磁電変換素子と、前記第１の磁電変換素子と前記第２の磁電変換素子との出力の差分を演算する演算装置と、を備え、前記第１の磁電変換素子に加わる前記誘導磁界である磁界の向きと前記第１の磁電変換素子が検出する第１感磁方向とがなす角と、前記第２の磁電変換素子に加わる前記誘導磁界である磁界の向きと前記第２の磁電変換素子が検出する第２感磁方向とがなす角と、が異なり、前記電流路と前記第１の磁電変換素子との間の総合の静電容量と、前記電流路と前記第２の磁電変換素子との間の総合の静電容量とが等しいことを特徴としている。 The current sensor of the present invention is a current sensor for detecting a current path through which a current to be measured flows and a magnetic field of an induced magnetic field generated by the current flowing through the current path, and surrounds the current path and is provided with a gap. The magnetic core formed, the first magnetoelectric conversion element provided in the gap of the magnetic core, the second magnetoelectric conversion element provided in the gap of the magnetic core, and the first An arithmetic unit that calculates a difference in output between the first magnetoelectric conversion element and the second magnetoelectric conversion element, and a direction of the magnetic field that is the induction magnetic field applied to the first magnetoelectric conversion element and the first magnetoelectric The angle formed by the first magnetosensitive direction detected by the conversion element, the direction of the magnetic field that is the induction magnetic field applied to the second magnetoelectric conversion element, and the second magnetosensitive direction detected by the second magnetoelectric conversion element The angle between the current path and the front And the capacitance of the overall between the first magneto-electric transducer, is characterized by equal and the capacitance of the overall between the current path and the second electromagnetic element.
　これによれば、本発明の電流センサは、第１磁界の向きと第１感磁方向とがなす角と、第２磁界の向きと第２感磁方向とがなす角と、が異なるので、２つの磁電変換素子で検出される出力値が異なり、２つの磁電変換素子で検出される出力値の差分を演算装置で演算して比較することができる。さらに、電流路と第１の磁電変換素子との間の総合の静電容量と、電流路と第２の磁電変換素子との間の総合の静電容量とが等しいので、静電結合に起因するノイズの影響を正確に打ち消すことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。したがって、精度の高い電流値の計測ができる電流センサを提供することができる。 Accordingly, in the current sensor of the present invention, the angle formed between the direction of the first magnetic field and the first magnetosensitive direction is different from the angle formed between the direction of the second magnetic field and the second magnetosensitive direction. The output values detected by the two magnetoelectric conversion elements are different, and the difference between the output values detected by the two magnetoelectric conversion elements can be calculated by an arithmetic device and compared. Furthermore, the total capacitance between the current path and the first magnetoelectric conversion element is equal to the total capacitance between the current path and the second magnetoelectric conversion element. It is possible to accurately cancel the influence of noise. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide a current sensor that can measure a current value with high accuracy.
　また、本発明の電流センサは、前記第１の磁電変換素子及び前記第２の磁電変換素子は、前記磁性体コアの厚み方向に配設されるとともに、前記電流路に対して等距離になるように並べて配設されることを特徴としている。 In the current sensor of the present invention, the first magnetoelectric conversion element and the second magnetoelectric conversion element are disposed in the thickness direction of the magnetic core and are equidistant from the current path. It is characterized by being arranged side by side.
　これによれば、本発明の電流センサは、磁性体コアの厚み方向に配設された第１の磁電変換素子及び第２の磁電変換素子が電流路に対して等距離になるように並べて配設されるので、電流路と第１の磁電変換素子との間の総合の静電容量と、電流路と第２の磁電変換素子との間の総合の静電容量とをより等しくすることができる。このため、２つの磁電変換素子で検出される異なる出力値の差分を演算装置で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 According to this, the current sensor of the present invention is arranged side by side so that the first magnetoelectric transducer and the second magnetoelectric transducer arranged in the thickness direction of the magnetic core are equidistant from the current path. Therefore, the total capacitance between the current path and the first magnetoelectric conversion element and the total capacitance between the current path and the second magnetoelectric conversion element can be made more equal. it can. For this reason, when the difference between the different output values detected by the two magnetoelectric conversion elements is calculated by the calculation device, it is possible to subtract the influence of noise caused by the capacitance more accurately. As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、本発明の電流センサは、前記磁界の向きと前記第１感磁方向とが平行であり、前記磁界の向きと前記第２感磁方向とが平行であることを特徴としている。 The current sensor of the present invention is characterized in that the direction of the magnetic field and the first magnetic sensing direction are parallel, and the direction of the magnetic field and the second magnetic sensing direction are parallel.
　これによれば、本発明の電流センサは、磁界の向きと第１感磁方向とが平行であるとともに、磁界の向きと第２感磁方向とが平行であるので、第１の磁電変換素子及び第２の磁電変換素子が受けるそれぞれの誘導磁界は同じになり、第１の磁電変換素子及び第２の磁電変換素子がそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子と第２の磁電変換素子とを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 According to this, since the direction of the magnetic field and the first magnetosensitive direction are parallel and the direction of the magnetic field and the second magnetosensitive direction are parallel, the current sensor of the present invention has the first magnetoelectric conversion element. The induced magnetic fields received by the second and second magnetoelectric conversion elements are the same, and the external magnetic fields received by the first and second magnetoelectric conversion elements at different angles are different. Thus, by comparing the first magnetoelectric conversion element and the second magnetoelectric conversion element, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced.
　また、本発明の電流センサは、前記電流路と前記第１の磁電変換素子との距離及び対向面積と、前記電流路と前記第２の磁電変換素子との距離及び対向面積と、が等しいとともに、前記磁性体コアと前記第１の磁電変換素子との距離及び対向面積と、前記磁性体コアと前記第２の磁電変換素子との距離及び対向面積と、が等しいことを特徴としている。 In the current sensor of the present invention, the distance and the facing area between the current path and the first magnetoelectric conversion element and the distance and the facing area between the current path and the second magnetoelectric conversion element are equal. The distance and the facing area between the magnetic core and the first magnetoelectric conversion element are equal to the distance and the facing area between the magnetic core and the second magnetoelectric conversion element.
　これによれば、本発明の電流センサは、電流路と第１の磁電変換素子及び第２の磁電変換素子との距離及び対向面積が等しいとともに、磁性体コアと第１の磁電変換素子及び第２の磁電変換素子との距離及び対向面積が等しいので、それぞれの磁電変換素子と電流路、それぞれの磁電変換素子と磁性体コアとの静電容量が同等になる。このことにより、電流センサを作製する際に、それぞれの磁電変換素子の総合の静電容量をより等しくすることが容易であり、静電結合に起因するノイズの影響をより一層低減することができる。 According to this, in the current sensor of the present invention, the distance between the current path, the first magnetoelectric conversion element, and the second magnetoelectric conversion element and the facing area are equal, and the magnetic core, the first magnetoelectric conversion element, and the first magnetoelectric conversion element Since the distance and the facing area between the two magnetoelectric conversion elements are equal, the capacitances of the respective magnetoelectric conversion elements and current paths, and the respective magnetoelectric conversion elements and the magnetic core are equal. As a result, it is easy to make the total capacitance of each magnetoelectric conversion element equal when manufacturing a current sensor, and the influence of noise caused by electrostatic coupling can be further reduced. .
　本発明の電流センサは、第１磁界の向きと第１感磁方向とがなす角と、第２磁界の向きと第２感磁方向とがなす角と、が異なり、電流路と第１の磁電変換素子との間の総合の静電容量と、電流路と第２の磁電変換素子との間の総合の静電容量とが等しいので、２つの磁電変換素子で検出される異なる出力値の差分を演算装置で演算する際に、静電容量に起因するノイズの影響を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。 In the current sensor of the present invention, the angle formed by the direction of the first magnetic field and the first magnetic sensing direction is different from the angle formed by the direction of the second magnetic field and the second magnetic sensitive direction. Since the total capacitance between the magnetoelectric transducers and the total capacitance between the current path and the second magnetoelectric transducer are equal, different output values detected by the two magnetoelectric transducers When the difference is calculated by the calculation device, the influence of noise caused by the capacitance can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
本発明の第１実施形態の電流センサを説明する斜視図である。It is a perspective view explaining the current sensor of a 1st embodiment of the present invention. 本発明の第１実施形態の電流センサを説明する図であって、図２Ａは、図１に示すＸ１側から見た側面図であり、図２Ｂは、図１に示すＸ２側から見た側面図であり、図２Ｃは、図１に示すＺ１側から見た上面図である。2A and 2B are diagrams illustrating the current sensor according to the first embodiment of the present invention, in which FIG. 2A is a side view seen from the X1 side shown in FIG. 1, and FIG. 2B is a side view seen from the X2 side shown in FIG. FIG. 2C is a top view seen from the Z1 side shown in FIG. 本発明の第１実施形態の電流センサにおける静電容量を示した模式図である。It is the schematic diagram which showed the electrostatic capacitance in the current sensor of 1st Embodiment of this invention. 本発明の第１実施形態の電流センサにおける誘導磁界の向きと磁電変換素子の感磁方向を示した模式図である。It is the schematic diagram which showed the direction of the induction magnetic field in the current sensor of 1st Embodiment of this invention, and the magnetosensitive direction of a magnetoelectric conversion element. 本発明の第２実施形態の電流センサを説明する斜視図である。It is a perspective view explaining the current sensor of a 2nd embodiment of the present invention. 本発明の第２実施形態の電流センサを説明する図であって、図６Ａは、図５に示すＹ２側から見た正面図であり、図６Ｂは、図５に示すＸ１側から見た側面図であり、図６Ｃは、図５に示すＺ１側から見た上面図である。FIG. 6A is a front view seen from the Y2 side shown in FIG. 5 and FIG. 6B is a side view seen from the X1 side shown in FIG. FIG. 6C is a top view seen from the Z1 side shown in FIG. 本発明の第２実施形態の電流センサにおける静電容量を示した模式図である。It is the schematic diagram which showed the electrostatic capacitance in the current sensor of 2nd Embodiment of this invention. 本発明の第２実施形態の電流センサにおける誘導磁界の向きと磁電変換素子の感磁方向を示した模式図である。It is the schematic diagram which showed the direction of the induction magnetic field in the current sensor of 2nd Embodiment of this invention, and the magnetosensitive direction of a magnetoelectric conversion element. 本発明の第３実施形態の電流センサを説明する斜視図である。It is a perspective view explaining the current sensor of a 3rd embodiment of the present invention. 本発明の第３実施形態の電流センサを説明する図であって、図１０Ａは、図９に示すＹ２側から見た正面図であり、図１０Ｂは、図９に示すＸ１側から見た側面図であり、図１０Ｃは、図９に示すＺ１側から見た上面図である。FIG. 10A is a front view seen from the Y2 side shown in FIG. 9 and FIG. 10B is a side view seen from the X1 side shown in FIG. FIG. 10C is a top view seen from the Z1 side shown in FIG. 本発明の第３実施形態の電流センサにおける静電容量を示した模式図である。It is the schematic diagram which showed the electrostatic capacitance in the current sensor of 3rd Embodiment of this invention. 本発明の第３実施形態の電流センサにおける誘導磁界の向きと磁電変換素子の感磁方向を示した模式図である。It is the schematic diagram which showed the direction of the induction magnetic field in the current sensor of 3rd Embodiment of this invention, and the magnetosensitive direction of a magnetoelectric conversion element. 本発明の第１実施形態の電流センサの変形例を説明する図であって、図１３Ａは、磁電変換素子の配設位置を変えた変形例１であって、図１３Ｂは、磁電変換素子の配設位置を変えた変形例２である。FIG. 13A is a diagram illustrating a modification of the current sensor according to the first embodiment of the present invention, FIG. 13A is a modification 1 in which the arrangement position of the magnetoelectric conversion element is changed, and FIG. 13B is a diagram of the magnetoelectric conversion element; It is the modification 2 which changed the arrangement position. 本発明の第１実施形態及び第２実施形態の電流センサの変形例を説明する模式図であって、図１４Ａは、第１実施形態の磁電変換素子の配設位置を変えた変形例３であって、図１４Ｂは、第２実施形態の磁電変換素子の配設位置を変えた変形例４である。FIG. 14A is a schematic diagram illustrating a modification of the current sensor according to the first embodiment and the second embodiment of the present invention, and FIG. 14A is a modification 3 in which the arrangement position of the magnetoelectric conversion element according to the first embodiment is changed. And FIG. 14B is the modification 4 which changed the arrangement position of the magnetoelectric conversion element of 2nd Embodiment. 本発明の第１実施形態及び第２実施形態の電流センサの変形例を説明する図であって、図１５Ａは、第１実施形態の電流路及び磁性体コアを変えた変形例５であって、図１５Ｂは、第２実施形態の電流路及び磁性体コアを変えた変形例６である。It is a figure explaining the modification of the current sensor of 1st Embodiment of this invention, and 2nd Embodiment, Comprising: FIG. 15A is the modification 5 which changed the electric current path and magnetic body core of 1st Embodiment, FIG. 15B is a sixth modification in which the current path and the magnetic core of the second embodiment are changed. 本発明の第２実施形態の電流センサの変形例を説明する図であって、磁電変換素子の配設位置を変えた変形例９の電流センサである。It is a figure explaining the modification of the current sensor of 2nd Embodiment of this invention, Comprising: It is the current sensor of the modification 9 which changed the arrangement position of the magnetoelectric conversion element. 本発明の第３実施形態の電流センサの変形例を説明する図であって、図１７Ａは、第３実施形態の磁電変換素子の配設位置を変えた変形例１０であって、図１７Ｂは、第３実施形態の配設位置を変えた変形例１１である。FIG. 17A is a diagram illustrating a modification of the current sensor according to the third embodiment of the present invention, and FIG. 17A is a modification 10 in which the arrangement position of the magnetoelectric transducer according to the third embodiment is changed, and FIG. This is a modified example 11 in which the arrangement position of the third embodiment is changed. 特許文献１の従来例における電流検出器の構成を概略的に示した図である。It is the figure which showed schematically the structure of the current detector in the prior art example of patent document 1. FIG.
　以下、本発明の実施の形態について図面を参照して詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
　［第１実施形態］
　図１は、本発明の第１実施形態の電流センサ１０１を説明する斜視図である。図２は、本発明の第１実施形態の電流センサ１０１を説明する図であって、図２Ａは、図１に示すＸ１側から見た側面図であり、図２Ｂは、図１に示すＸ２側から見た側面図であり、図２Ｃは、図１に示すＺ１側から見た上面図である。図３は、本発明の第１実施形態の電流センサにおける静電容量を示した模式図である。図４は、本発明の第１実施形態の電流センサにおける誘導磁界の向きと磁電変換素子１３の感磁方向を示した模式図である。 [First Embodiment]
FIG. 1 is a perspective view illustrating a current sensor 101 according to the first embodiment of the present invention. 2A and 2B are diagrams for explaining the current sensor 101 according to the first embodiment of the present invention. FIG. 2A is a side view seen from the X1 side shown in FIG. 1, and FIG. 2B is a diagram showing X2 shown in FIG. 2C is a side view seen from the side, and FIG. 2C is a top view seen from the Z1 side shown in FIG. FIG. 3 is a schematic diagram showing capacitance in the current sensor according to the first embodiment of the present invention. FIG. 4 is a schematic diagram showing the direction of the induced magnetic field and the magnetosensitive direction of the magnetoelectric transducer 13 in the current sensor according to the first embodiment of the present invention.
　本発明の第１実施形態の電流センサ１０１は、図１及び図２に示すように、被測定電流が流れる電流路ＣＢと、円形の環状で電流路ＣＢを囲む位置に配設された磁性体コア１１と、電流路ＣＢに流れる電流によって発生する誘導磁界の磁気を検出する２つの磁電変換素子１３（第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂ）と、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとの出力の差分を演算する演算装置１７と、を備えて構成される。他に、電流路ＣＢと磁性体コア１１との間に設けられた誘電体１４（第１の誘電体１４Ａ及び第２の誘電体１４Ｂ）と、第１の磁電変換素子１３Ａ、第２の磁電変換素子１３Ｂ及び演算装置１７を搭載している基板９を備えている。なお、基板９には、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂからの出力値を演算装置１７に伝送するための配線パターン（図示していない）が設けられている。 As shown in FIGS. 1 and 2, the current sensor 101 according to the first embodiment of the present invention includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB in a circular ring shape. Core 11, two magnetoelectric conversion elements 13 (first magnetoelectric conversion element 13 </ b> A and second magnetoelectric conversion element 13 </ b> B) that detect magnetism of an induced magnetic field generated by a current flowing in current path CB, and a first magnetoelectric conversion And an arithmetic unit 17 that calculates a difference in output between the element 13A and the second magnetoelectric transducer 13B. In addition, the dielectric 14 (the first dielectric 14A and the second dielectric 14B) provided between the current path CB and the magnetic core 11, the first magnetoelectric conversion element 13A, the second magnetoelectric The board | substrate 9 which mounts the conversion element 13B and the arithmetic unit 17 is provided. The substrate 9 is provided with a wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B to the arithmetic unit 17.
　磁性体コア１１は、軟磁性体、例えばパーマロイ（Ｆｅ－Ｎｉ合金）を用い、図１及び図２に示すように、円形の環状に形成され、磁性体コア１１には、その一方側に第１の空隙Ｋ１１と、第１の空隙Ｋ１１と電流路ＣＢを挟んで対向する側に第２の空隙Ｋ１２が設けられて構成されている。そして、金属製の電流路ＣＢを囲むように磁性体コア１１が配設され、電流路ＣＢの回りに発生する磁束を集束している。なお、電流路ＣＢと磁性体コア１１との固定には、後述する誘電体１４を用いるか、或いは図示はしないが、保持部材等を用いて電流路ＣＢを磁性体コア１１に保持することによって容易に達成できる。 The magnetic core 11 is made of a soft magnetic material, such as permalloy (Fe—Ni alloy), and is formed in a circular ring shape as shown in FIGS. 1 and 2. The first gap K11 is provided, and the second gap K12 is provided on the side facing the first gap K11 and the current path CB. And the magnetic body core 11 is arrange | positioned so that the metal current path CB may be enclosed, and the magnetic flux which generate | occur | produces around the current path CB is converged. The current path CB and the magnetic core 11 are fixed by using a dielectric 14 described later, or by holding the current path CB on the magnetic core 11 using a holding member or the like (not shown). Can be easily achieved.
　また、図１及び図２に示すように、第１の空隙Ｋ１１と第２の空隙Ｋ１２とが同じ大きさ及び形状で形成され、第１の空隙Ｋ１１と第２の空隙Ｋ１２とが電流路ＣＢの中心軸Ａｊに対して対称になるように、電流路ＣＢが配設されている。なお、磁性体コア１１は、円形の環状に形成されているが、第１の空隙Ｋ１１或いは第２の空隙Ｋ１２を形成している対向する面が、平行になるように形成されているので、第１の空隙Ｋ１１或いは第２の空隙Ｋ１２内の磁界（後述する第１磁界の向きＭ１１或いは第２磁界の向きＭ１２）は、平行磁界となっている。また、磁性体コア１１にパーマロイ（Ｆｅ－Ｎｉ合金）を用いたが、軟磁性材料であれば良く、他の鉄系材料であるセンダスト（Ｆｅ－Ｓｉ－Ａｌ合金）、珪素鋼等や、非鉄系のアモルファス磁性合金等、酸化物のフェライトなどでも良い。 Further, as shown in FIGS. 1 and 2, the first gap K11 and the second gap K12 are formed in the same size and shape, and the first gap K11 and the second gap K12 are connected to the current path CB. The current path CB is arranged so as to be symmetric with respect to the central axis Aj. The magnetic core 11 is formed in a circular ring shape, but the opposing surfaces forming the first gap K11 or the second gap K12 are formed so as to be parallel, A magnetic field (first magnetic field direction M11 or second magnetic field direction M12 described later) in the first gap K11 or the second gap K12 is a parallel magnetic field. In addition, permalloy (Fe—Ni alloy) is used for the magnetic core 11, but any soft magnetic material may be used. Amorphous magnetic alloy, oxide ferrite, etc. may be used.
　磁電変換素子１３は、電流路ＣＢに電流が流れたときに発生する磁気を検出する電流のセンサであって、例えば、巨大磁気抵抗効果を用いた磁気抵抗素子（ＧＭＲ(Giant Magneto Resistive)素子と言う）を用いている。ＧＭＲ素子は、例えば、反強磁性層がα－Ｆｅ２Ｏ３層、ピン層がＮｉＦｅ層、中間層がＣｕ層、フリー層がＮｉＦｅ層から形成されている。そして、この磁電変換素子１３は、ＧＭＲ素子をシリコン基板上に作製し、切り出されたＧＭＲチップを熱硬化性の合成樹脂でパッケージングしている。また、磁電変換素子１３は、図１及び図２に示すように、２つの磁電変換素子１３、つまり第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとを備えている。なお、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂの外形（パッケージングサイズ）は、同じサイズのものを選定している。 The magnetoelectric conversion element 13 is a current sensor that detects magnetism generated when a current flows through the current path CB. For example, the magnetoelectric conversion element 13 is a magnetoresistive element (GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect). Say). In the GMR element, for example, an antiferromagnetic layer is formed of an α-Fe 2 O 3 layer, a pinned layer is formed of a NiFe layer, an intermediate layer is formed of a Cu layer, and a free layer is formed of a NiFe layer. In the magnetoelectric conversion element 13, a GMR element is produced on a silicon substrate, and the cut GMR chip is packaged with a thermosetting synthetic resin. As shown in FIGS. 1 and 2, the magnetoelectric conversion element 13 includes two magnetoelectric conversion elements 13, that is, a first magnetoelectric conversion element 13A and a second magnetoelectric conversion element 13B. Note that the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B have the same outer shape (packaging size).
　また、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂは、図１及び図２に示すように、プリント配線板（ＰＣＢ：Printed Circuit Board）等の基板９に搭載され、第１の空隙Ｋ１１に第１の磁電変換素子１３Ａが配設され、第２の空隙Ｋ１２に第２の磁電変換素子１３Ｂが配設されている。これにより、図３に示すように、第１の磁電変換素子１３Ａと磁性体コア１１との間に静電容量がＣ１１及びＣ１２として生じ、第１の磁電変換素子１３Ａと電流路ＣＢとの間に静電容量がＣ１３として生じ、磁性体コア１１と電流路ＣＢとの間に静電容量がＣ３１及びＣ３２として生じて、結果として、電流路ＣＢと第１の磁電変換素子１３Ａとの間の総合の静電容量Ｃ１は次式のようになる。 Further, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are mounted on a substrate 9 such as a printed circuit board (PCB) as shown in FIG. 1 and FIG. The first magnetoelectric conversion element 13A is disposed in the gap K11, and the second magnetoelectric conversion element 13B is disposed in the second gap K12. As a result, as shown in FIG. 3, capacitances are generated as C 11 and C 12 between the first magnetoelectric conversion element 13A and the magnetic core 11, and the first magnetoelectric conversion element 13A and the current path CB resulting capacitance as C 13 between the electrostatic capacitance between the magnetic core 11 and the current path CB is generated as C 31 and C 32, as a result, a current path CB of the first electromagnetic element The total capacitance C1 between 13A is given by the following equation.
　Ｃ１＝Ｃ１３＋Ｃ３１×Ｃ１１／（Ｃ３１＋Ｃ１１）＋Ｃ３２×Ｃ１２／（Ｃ３２＋Ｃ１２） C1 = C 13 + C 31 × C 11 / (C 31 + C 11) + C 32 × C 12 / (C 32 + C 12)
　同様にして、第２の磁電変換素子１３Ｂと磁性体コア１１との間に静電容量がＣ２１及びＣ２２として生じ、第２の磁電変換素子１３Ｂと電流路ＣＢとの間に静電容量がＣ２３として生じて、結果として、電流路ＣＢと第２の磁電変換素子１３Ｂとの間の総合の静電容量Ｃ２は次式のようになる。 Similarly, the capacitance between the second magneto-electric conversion element 13B and the magnetic core 11 is generated as C 21 and C 22, the capacitance between the second magneto-electric conversion element 13B and the current path CB There occurs as C 23, as a result, the electrostatic capacity C2 of the total between the current paths CB and the second electromagnetic element 13B is as follows.
　Ｃ２＝Ｃ２３＋Ｃ３１×Ｃ２１／（Ｃ３１＋Ｃ２１）＋Ｃ３２×Ｃ２２／（Ｃ３２＋Ｃ２２） C2 = C 23 + C 31 × C 21 / (C 31 + C 21) + C 32 × C 22 / (C 32 + C 22)
　また、図４に示すように、第１の磁電変換素子１３Ａが検出する感磁方向が第１感磁方向Ｓ１１になるように配設されるとともに、第２の磁電変換素子１３Ｂが検出する感磁方向が第２感磁方向Ｓ１２になるように配設されている。ここでいう感磁方向とは、磁電変換素子１３が検出する値がプラスになる向きを示している。一方、図４に示すように、第１の磁電変換素子１３Ａが配設される第１の空隙Ｋ１１における誘導磁界の向きが第１磁界の向きＭ１１となっており、第２の磁電変換素子１３Ｂが配設される第２の空隙Ｋ１２における誘導磁界の向きが第２磁界の向きＭ１２となっている。このため、第１の磁電変換素子１３Ａに加わる誘導磁界の第１磁界の向きＭ１１と第１の磁電変換素子１３Ａが検出する第１感磁方向Ｓ１１とがなす角、つまり０°と、第２の磁電変換素子１３Ｂに加わる誘導磁界の第２磁界の向きＭ１２と第２の磁電変換素子１３Ｂが検出する第２感磁方向Ｓ１２とがなす角、つまり１８０°と、異なっている。これにより、２つの磁電変換素子１３（１３Ａ、１３Ｂ）で検出される出力値が異なるので、この２つの磁電変換素子１３（１３Ａ、１３Ｂ）で検出される出力値の差分を演算装置１７で演算して比較することができる。 Further, as shown in FIG. 4, the magnetic sensing direction detected by the first magnetoelectric conversion element 13A is arranged to be the first magnetic sensing direction S11, and the sensitivity detected by the second magnetoelectric conversion element 13B. It arrange | positions so that a magnetic direction may turn into 2nd magnetosensitive direction S12. The magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric transducer 13 is positive. On the other hand, as shown in FIG. 4, the direction of the induced magnetic field in the first gap K11 in which the first magnetoelectric conversion element 13A is disposed is the first magnetic field direction M11, and the second magnetoelectric conversion element 13B. The direction of the induced magnetic field in the second gap K12 in which is disposed is the second magnetic field direction M12. For this reason, the angle formed by the first magnetic direction S11 detected by the first magnetoelectric conversion element 13A and the direction M11 of the first magnetic field of the induced magnetic field applied to the first magnetoelectric conversion element 13A, that is, 0 °, This is different from the angle formed by the second magnetic direction S12 detected by the second magnetoelectric conversion element 13B and the direction M12 of the second magnetic field of the induced magnetic field applied to the magnetoelectric conversion element 13B, that is, 180 °. As a result, since the output values detected by the two magnetoelectric conversion elements 13 (13A, 13B) are different, the calculation device 17 calculates the difference between the output values detected by the two magnetoelectric conversion elements 13 (13A, 13B). Can be compared.
　更に、本発明の第１実施形態では、電流路ＣＢと第１の磁電変換素子１３Ａとの間の総合の静電容量Ｃ１と、電流路ＣＢと第２の磁電変換素子１３Ｂとの間の総合の静電容量Ｃ２とが等しくなるように調整されている。これにより、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）に付加された静電容量を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。 Furthermore, in the first embodiment of the present invention, the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A and the total capacitance between the current path CB and the second magnetoelectric conversion element 13B. The capacitance C2 is adjusted to be equal. Thereby, the electrostatic capacitance added to each magnetoelectric conversion element 13 (13A, 13B) can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
　更に、本発明の第１実施形態では、図２Ｃないし図４に示すように、電流路ＣＢと磁性体コア１１との間に、２つの誘電体１４、つまり第１の誘電体１４Ａと第２の誘電体１４Ｂとが設けられている。これにより、この誘電体１４（第１の誘電体１４Ａ及び第２の誘電体１４Ｂ）の誘電率や大きさを変えることにより、電流路ＣＢと第１の磁電変換素子１３Ａとの間の総合の静電容量Ｃ１と、電流路ＣＢと第２の磁電変換素子１３Ｂとの間の総合の静電容量Ｃ２とを等しくする前述した調整が容易にでき、それぞれの総合の静電容量（Ｃ１とＣ２）をより等しくすることができる。このため、２つの磁電変換素子１３（１３Ａ、１３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 Furthermore, in the first embodiment of the present invention, as shown in FIGS. 2C to 4, two dielectrics 14, that is, the first dielectric 14 </ b> A and the second dielectric are provided between the current path CB and the magnetic core 11. The dielectric 14B is provided. Thus, by changing the dielectric constant and size of the dielectric 14 (the first dielectric 14A and the second dielectric 14B), the total current between the current path CB and the first magnetoelectric transducer 13A is changed. The above-described adjustment to make the capacitance C1 equal to the total capacitance C2 between the current path CB and the second magnetoelectric transducer 13B can be easily performed, and the respective total capacitance (C1 and C2). ) Can be made more equal. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric transducers 13 (13A, 13B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、誘電体１４には、材質の制限は無く、合成樹脂や酸化物等で良く、非磁性であれば金属でも良い。また、図２Ｃに示すように、２つの誘電体１４（第１の誘電体１４Ａ及び第２の誘電体１４Ｂ）の厚みを同じにして、電流路ＣＢと磁性体コア１１との間に圧入するように配置すると、誘電体１４は、電流路ＣＢを固定するとともに、電流路ＣＢを磁性体コア１１の中心に位置させる役割を担い、ひいては電流路ＣＢと２つの磁電変換素子１３（１３Ａ、１３Ｂ）のそれぞれとの距離を等距離にする役割を担っている。また、上述した調整において、この誘電体１４の配設位置を少し移動させることによっても行われる。 The material of the dielectric 14 is not limited, and may be a synthetic resin or an oxide, and may be a metal if it is non-magnetic. Further, as shown in FIG. 2C, the thicknesses of the two dielectrics 14 (the first dielectric 14A and the second dielectric 14B) are made the same and press-fitted between the current path CB and the magnetic core 11. In this arrangement, the dielectric 14 fixes the current path CB and plays a role of positioning the current path CB at the center of the magnetic core 11, and consequently the current path CB and the two magnetoelectric transducers 13 (13 </ b> A, 13 </ b> B). ) Is the same distance from each other. Further, in the adjustment described above, it is also performed by slightly moving the arrangement position of the dielectric 14.
　また、本発明の第１実施形態では、図４に示すように、第１磁界の向きＭ１１と第１感磁方向Ｓ１１とが平行であり、第２磁界の向きＭ１２と第２感磁方向Ｓ１２とが平行になるように、第１の空隙Ｋ１１及び第２の空隙Ｋ１２に対して、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂを配設している。これによれば、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが受けるそれぞれの誘導磁界は同じになり、それぞれ違う角度で第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとを比較することで、外部磁場の影響を相殺でき、外部磁場からの影響を低減することが容易にできる。 In the first embodiment of the present invention, as shown in FIG. 4, the first magnetic field direction M11 and the first magnetic sensing direction S11 are parallel, and the second magnetic field direction M12 and the second magnetic sensitive direction S12. Are arranged in parallel to the first gap K11 and the second gap K12, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B. According to this, the induction magnetic fields received by the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are the same, and the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are at different angles. The external magnetic field received by each will be different. Thus, by comparing the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B, the influence of the external magnetic field can be canceled and the influence from the external magnetic field can be easily reduced.
　更に、本発明の第１実施形態では、図４に示すように、第１磁界の向きＭ１１と第２磁界の向きＭ１２とが逆向きになるように、第１の空隙Ｋ１１及び第２の空隙Ｋ１２が磁性体コア１１に設けられている。そして、この第１の空隙Ｋ１１及び第２の空隙Ｋ１２に、第１の磁電変換素子１３Ａの及び第２の磁電変換素子１３Ｂが配設されて、第１磁界の向きＭ１１と平行な第１感磁方向Ｓ１１と第２磁界の向きＭ１２と平行な第２感磁方向Ｓ１２とが逆向きになる。これにより、一方の磁電変換素子１３の出力値がプラス値となり、他方の磁電変換素子１３の出力値がマイナス値となるので、第１の磁電変換素子１３Ａの出力値と第２の磁電変換素子１３Ｂの出力値との差分値が最大に得られる。このことにより、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとの出力の差分値を演算装置１７で演算することで、電流センサ１０１の感度を高めることができる。 Furthermore, in the first embodiment of the present invention, as shown in FIG. 4, the first gap K11 and the second gap so that the first magnetic field direction M11 and the second magnetic field direction M12 are opposite to each other. K12 is provided in the magnetic core 11. In the first gap K11 and the second gap K12, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are arranged, and a first feeling parallel to the first magnetic field direction M11 is provided. The magnetic direction S11 and the second magnetic sensing direction S12 parallel to the second magnetic field direction M12 are opposite to each other. As a result, the output value of one magnetoelectric conversion element 13 becomes a positive value and the output value of the other magnetoelectric conversion element 13 becomes a negative value. Therefore, the output value of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element The maximum difference value with the output value of 13B is obtained. Thus, the sensitivity of the current sensor 101 can be increased by calculating the difference value between the outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B by the calculation device 17.
　上述した演算装置１７は、基板９に搭載されて、詳細な図示はしていないが、基板９に設けられた配線パターンにより、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂと電気的に接続され、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとの出力の差分を演算している。また、詳細な図示はしていないが、演算装置１７には、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂからの電気信号を処理して演算するための半導体集積回路（ＩＣ：Integrated Circuit）が備えられている。なお、演算装置１７は、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂが搭載されている基板９に搭載されているが、別な基板或いは別な電子機器に搭載されて、電気的に繋がれていても良い。 Although the arithmetic device 17 described above is mounted on the substrate 9 and is not shown in detail, the first magnetoelectric conversion element 13A, the second magnetoelectric conversion element 13B, and the electric Are connected, and a difference between outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B is calculated. Although not shown in detail, the arithmetic unit 17 includes a semiconductor integrated circuit (IC: IC) for processing and calculating electrical signals from the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B. Integrated Circuit). The arithmetic device 17 is mounted on the substrate 9 on which the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are mounted. However, the arithmetic device 17 is mounted on another substrate or another electronic device, May be connected.
　また、本発明の第１実施形態では、図２及び図３に示すように、同じ大きさ及び形状で形成された第１の空隙Ｋ１１と第２の空隙Ｋ１２とに、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが各々の空隙の中心に位置するように配置されているので、磁性体コア１１と第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの距離が等しくなっている。また、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが同じ外形（パッケージングサイズ）で形成されているので、磁性体コア１１と第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの対向面積が等しくなっている。これにより、図３に示す静電容量、Ｃ１１とＣ２１、及びＣ１２とＣ２２が同等になる。 Further, in the first embodiment of the present invention, as shown in FIGS. 2 and 3, the first magnetoelectric conversion element is formed in the first gap K11 and the second gap K12 formed in the same size and shape. Since the 13A and the second magnetoelectric conversion element 13B are arranged so as to be positioned at the center of each gap, the distance between the magnetic core 11 and the first and second magnetoelectric conversion elements 13A and 13B is Are equal. Also, since the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are formed with the same outer shape (packaging size), the magnetic core 11, the first magnetoelectric conversion element 13A, and the second magnetoelectric conversion The facing area with the element 13B is equal. As a result, the capacitances C 11 and C 21 , and C 12 and C 22 shown in FIG. 3 are equivalent.
　更に、図２及び図３に示すように、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとが電流路ＣＢの中心軸Ａｊに対して対称になるように、配設されているので、電流路ＣＢと第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの距離が等しくなっている。また、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが同じ外形（パッケージングサイズ）で形成されているので、電流路ＣＢと第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの対向面積が等しくなっている。これにより、図３に示す静電容量、Ｃ１３とＣ２３が同等になる。 Further, as shown in FIGS. 2 and 3, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are disposed so as to be symmetric with respect to the central axis Aj of the current path CB. Therefore, the distance between the current path CB and the first and second magnetoelectric conversion elements 13A and 13B is equal. Further, since the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are formed with the same outer shape (packaging size), the current path CB, the first magnetoelectric conversion element 13A, and the second magnetoelectric conversion element The facing area with 13B is equal. As a result, the capacitances C 13 and C 23 shown in FIG. 3 become equivalent.
　以上のようなことから、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）に付加される静電容量がより同等になるので、電流センサ１０１を作製する際に、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）の総合の静電容量（Ｃ１、Ｃ２）をより等しくすることが容易である。 As described above, the capacitance added to each of the magnetoelectric conversion elements 13 (13A, 13B) becomes more equal. Therefore, when the current sensor 101 is manufactured, each of the magnetoelectric conversion elements 13 (13A, It is easy to make the total capacitance (C1, C2) of 13B) more equal.
　以上により、本発明の電流センサ１０１は、第１磁界の向きＭ１１と第１感磁方向Ｓ１１とがなす角と、第２磁界の向きＭ１２と第２感磁方向Ｓ１２とがなす角と、が異なり、電流路ＣＢと第１の磁電変換素子１３Ａとの間の総合の静電容量Ｃ１と、電流路ＣＢと第２の磁電変換素子１３Ｂとの間の総合の静電容量Ｃ２とが等しいので、２つの磁電変換素子１３（１３Ａ、１３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電結合に起因するノイズの影響を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。したがって、精度の高い電流値の計測ができる電流センサ１０１を提供することができる。 As described above, the current sensor 101 of the present invention has the angle formed by the first magnetic field direction M11 and the first magnetic sensing direction S11 and the angle formed by the second magnetic field direction M12 and the second magnetic sensing direction S12. Unlikely, the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A and the total capacitance C2 between the current path CB and the second magnetoelectric conversion element 13B are equal. When the difference between different output values detected by the two magnetoelectric conversion elements 13 (13A, 13B) is calculated by the calculation device 17, the influence of noise caused by electrostatic coupling can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide the current sensor 101 that can measure the current value with high accuracy.
　また、電流路ＣＢと磁性体コア１１との間に誘電体１４（第１の誘電体１４Ａ及び第２の誘電体１４Ｂ）を設けるので、この誘電体１４（第１の誘電体１４Ａ及び第２の誘電体１４Ｂ）の誘電率や大きさを変えることにより、電流路ＣＢと第１の磁電変換素子１３Ａとの間の総合の静電容量Ｃ１と、電流路ＣＢと第２の磁電変換素子１３Ｂとの間の総合の静電容量Ｃ２とを等しくする、前述した調整が容易にでき、それぞれの総合の静電容量（Ｃ１とＣ２）をより等しくすることができる。このため、２つの磁電変換素子１３（１３Ａ、１３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 Further, since the dielectric 14 (the first dielectric 14A and the second dielectric 14B) is provided between the current path CB and the magnetic core 11, the dielectric 14 (the first dielectric 14A and the second dielectric 14B) is provided. By changing the dielectric constant and size of the dielectric 14B), the total capacitance C1 between the current path CB and the first magnetoelectric conversion element 13A, and the current path CB and the second magnetoelectric conversion element 13B. The above-described adjustment can be facilitated to make the total electrostatic capacity C2 between and equal to each other, and the total electrostatic capacity (C1 and C2) can be made more equal. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric transducers 13 (13A, 13B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、第１磁界の向きＭ１１と第１感磁方向Ｓ１１とが平行であるとともに、第２磁界の向きＭ１２と第２感磁方向Ｓ１２とが平行であるので、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂが受けるそれぞれの誘導磁界は同じになり、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂがそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。したがって、精度の高い電流値の計測ができる電流センサ１０１を提供することができる。 In addition, since the first magnetic field direction M11 and the first magnetic sensing direction S11 are parallel, and the second magnetic field direction M12 and the second magnetic sensing direction S12 are parallel, the first magnetoelectric transducer 13A and The induction magnetic fields received by the second magnetoelectric conversion element 13B are the same, and the external magnetic fields received by the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B at different angles are different. Accordingly, by comparing the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. . Therefore, it is possible to provide the current sensor 101 that can measure the current value with high accuracy.
　また、第１磁界の向きＭ１１と第２磁界の向きＭ１２とが逆向きであるので、第１磁界の向きＭ１１と平行な第１感磁方向Ｓ１１と、第２磁界の向きＭ１２と平行な第２感磁方向Ｓ１２と、が逆向きになる。このため、一方の磁電変換素子１３の出力値がプラス値となり、他方の磁電変換素子１３の出力値がマイナス値となるので、第１の磁電変換素子１３Ａの出力値と第２の磁電変換素子１３Ｂの出力値との差分値が最大に得られる。このことにより、第１の磁電変換素子１３Ａと第２の磁電変換素子１３Ｂとの出力の差分値を演算装置１７で演算することで、電流センサ１０１の感度を高めることができる。 In addition, since the first magnetic field direction M11 and the second magnetic field direction M12 are opposite to each other, the first magnetic sensing direction S11 parallel to the first magnetic field direction M11 and the second magnetic field direction M12 parallel to the first magnetic field direction M12. The two magnetic sensing directions S12 are opposite to each other. For this reason, since the output value of one magnetoelectric conversion element 13 becomes a positive value and the output value of the other magnetoelectric conversion element 13 becomes a negative value, the output value of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element The maximum difference value with the output value of 13B is obtained. Thus, the sensitivity of the current sensor 101 can be increased by calculating the difference value between the outputs of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B by the calculation device 17.
　また、電流路ＣＢと第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの距離及び対向面積が等しいとともに、磁性体コア１１と第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの距離及び対向面積が等しいので、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）と電流路ＣＢ、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）と磁性体コア１１との静電容量が同等になる。このことにより、それぞれの磁電変換素子１３（１３Ａ、１３Ｂ）の総合の静電容量（Ｃ１、Ｃ２）をより等しくすることが容易であり、静電結合に起因するノイズの影響をより一層低減することができる。 Further, the distance and the facing area between the current path CB and the first and second magnetoelectric conversion elements 13A and 13B are equal, and the magnetic core 11, the first and second magnetoelectric conversion elements 13A and 13B, and the second magnetoelectric conversion element. Since the distance to 13B and the facing area are equal, the capacitances of the respective magnetoelectric conversion elements 13 (13A, 13B) and the current path CB, the respective magnetoelectric conversion elements 13 (13A, 13B), and the magnetic core 11 are equivalent. become. As a result, it is easy to make the total capacitance (C1, C2) of the respective magnetoelectric conversion elements 13 (13A, 13B) more equal, and the influence of noise due to electrostatic coupling is further reduced. be able to.
　［第２実施形態］
　図５は、本発明の第２実施形態の電流センサ１０２を説明する斜視図である。図６は、本発明の第２実施形態の電流センサ１０２を説明する図であって、図６Ａは、図５に示すＹ２側から見た正面図であり、図６Ｂは、図５に示すＸ１側から見た側面図であり、図６Ｃは、図５に示すＺ１側から見た上面図である。図７は、本発明の第２実施形態の電流センサにおける静電容量を示した模式図である。図８は、本発明の第２実施形態の電流センサにおける誘導磁界の向きと磁電変換素子２３の感磁方向を示した模式図である。第２実施形態の電流センサ１０２は、第１実施形態に対し、磁電変換素子２３の配設位置が主に異なる。なお、第１実施形態と同一構成については、同一符号を付して詳細な説明は省略する。 [Second Embodiment]
FIG. 5 is a perspective view illustrating the current sensor 102 according to the second embodiment of the present invention. 6A and 6B are diagrams illustrating the current sensor 102 according to the second embodiment of the present invention. FIG. 6A is a front view seen from the Y2 side shown in FIG. 5, and FIG. 6B is X1 shown in FIG. 6C is a side view seen from the side, and FIG. 6C is a top view seen from the Z1 side shown in FIG. FIG. 7 is a schematic diagram showing capacitance in the current sensor according to the second embodiment of the present invention. FIG. 8 is a schematic diagram showing the direction of the induced magnetic field and the magnetosensitive direction of the magnetoelectric transducer 23 in the current sensor according to the second embodiment of the present invention. The current sensor 102 of the second embodiment is mainly different from the first embodiment in the arrangement position of the magnetoelectric conversion element 23. In addition, about the same structure as 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.
　本発明の第２実施形態の電流センサ１０２は、図５及び図６に示すように、被測定電流が流れる電流路ＣＢと、中空の矩形で電流路ＣＢを囲む位置に配設された磁性体コア２１と、電流路ＣＢに流れる電流によって発生する誘導磁界の磁気を検出する２つの磁電変換素子２３（第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂ）と、第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂとの出力の差分を演算する演算装置１７と、を備えて構成される。他に、電流路ＣＢと磁性体コア２１との間に設けられた誘電体２４（第１の誘電体２４Ａ及び第２の誘電体２４Ｂ）と、第１の磁電変換素子２３Ａ、第２の磁電変換素子２３Ｂ及び演算装置１７を搭載している基板９を備えている。なお、基板９には、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂからの出力値を演算装置１７に伝送するための配線パターン（図示していない）が設けられている。 As shown in FIGS. 5 and 6, the current sensor 102 according to the second embodiment of the present invention includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB with a hollow rectangle. The core 21, two magnetoelectric conversion elements 23 (first magnetoelectric conversion element 23A and second magnetoelectric conversion element 23B) for detecting the magnetism of the induced magnetic field generated by the current flowing in the current path CB, and the first magnetoelectric conversion And an arithmetic unit 17 that calculates a difference in output between the element 23A and the second magnetoelectric conversion element 23B. In addition, the dielectric 24 (the first dielectric 24A and the second dielectric 24B) provided between the current path CB and the magnetic core 21, the first magnetoelectric transducer 23A, the second magnetoelectric The board | substrate 9 which mounts the conversion element 23B and the arithmetic unit 17 is provided. The substrate 9 is provided with a wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B to the arithmetic unit 17.
　磁性体コア２１は、軟磁性体、例えばセンダスト（Ｆｅ－Ｓｉ－Ａｌ合金）を用い、図５及び図６に示すように、中空の矩形に形成され、磁性体コア２１には、その一辺側に第１の空隙Ｋ２１と他辺側に第２の空隙Ｋ２２が設けられて構成されている。そして、金属製の電流路ＣＢを囲むように磁性体コア２１が配設され、電流路ＣＢの回りに発生する磁束を集束している。また、第１の空隙Ｋ２１と第２の空隙Ｋ２２とが同じ大きさ及び形状で形成され、第１の空隙Ｋ２１と第２の空隙Ｋ２２とが電流路ＣＢの中心軸Ａｊに対して９０°でしかも等距離になるように、電流路ＣＢが配設されている。なお、電流路ＣＢの配設及び固定には、後述する誘電体１４を用いるか、或いは図示はしないが、保持部材等を用いて電流路ＣＢを磁性体コア１１に保持することによって容易に達成できる。また、磁性体コア２１にセンダスト（Ｆｅ－Ｓｉ－Ａｌ合金）を用いたが、軟磁性材料であれば良く、他の鉄系材料であるパーマロイ（Ｆｅ－Ｎｉ合金）、珪素鋼等や、非鉄系のアモルファス磁性合金等、酸化物のフェライトなどでも良い。 The magnetic core 21 is made of a soft magnetic material, such as Sendust (Fe—Si—Al alloy), and is formed into a hollow rectangle as shown in FIGS. 5 and 6, and the magnetic core 21 has one side thereof. The first gap K21 and the second gap K22 are provided on the other side. And the magnetic body core 21 is arrange | positioned so that the metal current path CB may be enclosed, and the magnetic flux which generate | occur | produces around the current path CB is converged. In addition, the first gap K21 and the second gap K22 are formed in the same size and shape, and the first gap K21 and the second gap K22 are 90 ° with respect to the central axis Aj of the current path CB. In addition, the current path CB is arranged so as to be equidistant. The current path CB is easily disposed and fixed by using the dielectric 14 described later or by holding the current path CB on the magnetic core 11 using a holding member or the like (not shown). it can. Further, Sendust (Fe—Si—Al alloy) is used for the magnetic core 21, but any soft magnetic material may be used. Other ferrous materials such as permalloy (Fe—Ni alloy), silicon steel, etc. Amorphous magnetic alloy, oxide ferrite, etc. may be used.
　磁電変換素子２３は、電流路ＣＢに電流が流れたときに発生する磁気を検出する電流のセンサであって、例えば、巨大磁気抵抗効果を用いた磁気抵抗素子（ＧＭＲ(Giant Magneto Resistive)素子と言う）を用いている。ＧＭＲ素子は、例えば、反強磁性層がα－Ｆｅ２Ｏ３層、ピン層がＮｉＦｅ層、中間層がＣｕ層、フリー層がＮｉＦｅ層から形成されている。そして、この磁電変換素子２３は、ＧＭＲ素子をシリコン基板上に作製し、切り出されたＧＭＲチップを熱硬化性の合成樹脂でパッケージングしている。また、磁電変換素子２３は、図５及び図６に示すように、２つの磁電変換素子２３、つまり第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂとを備えている。なお、第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂの外形（パッケージングサイズ）は、同じサイズのものを選定している。 The magnetoelectric conversion element 23 is a current sensor for detecting magnetism generated when a current flows in the current path CB. For example, a magnetoresistive element (GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect) Say). In the GMR element, for example, an antiferromagnetic layer is formed of an α-Fe 2 O 3 layer, a pinned layer is formed of a NiFe layer, an intermediate layer is formed of a Cu layer, and a free layer is formed of a NiFe layer. In the magnetoelectric conversion element 23, a GMR element is produced on a silicon substrate, and the cut out GMR chip is packaged with a thermosetting synthetic resin. Further, as shown in FIGS. 5 and 6, the magnetoelectric conversion element 23 includes two magnetoelectric conversion elements 23, that is, a first magnetoelectric conversion element 23 </ b> A and a second magnetoelectric conversion element 23 </ b> B. Note that the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B have the same outer shape (packaging size).
　また、第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂは、図５及び図６に示すように、基板９に搭載され、第１の空隙Ｋ２１に第１の磁電変換素子２３Ａが配設され、第２の空隙Ｋ２２に第２の磁電変換素子２３Ｂが配設されている。これにより、図７に示すように、第１の磁電変換素子２３Ａと磁性体コア２１との間に静電容量がＣ１４及びＣ１５として生じ、第１の磁電変換素子２３Ａと電流路ＣＢとの間に静電容量がＣ１６として生じ、磁性体コア２１と電流路ＣＢとの間に静電容量がＣ３４及びＣ３５として生じて、結果として、電流路ＣＢと第１の磁電変換素子２３Ａとの間の総合の静電容量Ｃ３は次式のようになる。 Further, as shown in FIGS. 5 and 6, the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are mounted on the substrate 9, and the first magnetoelectric conversion element 23A is arranged in the first gap K21. The second magnetoelectric conversion element 23B is disposed in the second gap K22. As a result, as shown in FIG. 7, capacitance is generated as C 14 and C 15 between the first magnetoelectric conversion element 23A and the magnetic core 21, and the first magnetoelectric conversion element 23A and the current path CB resulting capacitance as C 16 between the electrostatic capacitance between the magnetic core 21 and the current path CB is generated as C 34 and C 35, as a result, a current path CB of the first electromagnetic element The total capacitance C3 between 23A is expressed by the following equation.
　Ｃ３＝Ｃ１６＋Ｃ３４×Ｃ１４／（Ｃ３４＋Ｃ１４）＋Ｃ３５×Ｃ１５／（Ｃ３５＋Ｃ１５） C3 = C 16 + C 34 × C 14 / (C 34 + C 14) + C 35 × C 15 / (C 35 + C 15)
　同様にして、第２の磁電変換素子２３Ｂと磁性体コア２１との間に静電容量がＣ２４及びＣ２５として生じ、第２の磁電変換素子２３Ｂと電流路ＣＢとの間に静電容量がＣ２６として生じて、結果として、電流路ＣＢと第２の磁電変換素子２３Ｂとの間の総合の静電容量Ｃ４が次式のようになる。 Similarly, the capacitance between the second magneto-electric conversion element 23B and the magnetic core 21 is produced as a C 24 and C 25, the capacitance between the second magneto-electric conversion element 23B and the current path CB There occurs as C 26, as a result, the capacitance C4 of the total between the current paths CB and the second electromagnetic element 23B is as follows.
　Ｃ４＝Ｃ２６＋Ｃ３４×Ｃ２４／（Ｃ３４＋Ｃ２４）＋Ｃ３５×Ｃ２５／（Ｃ３５＋Ｃ２５） C4 = C 26 + C 34 × C 24 / (C 34 + C 24) + C 35 × C 25 / (C 35 + C 25)
　また、図８に示すように、第１の磁電変換素子２３Ａが検出する感磁方向が第１感磁方向Ｓ２１になるように配設されるとともに、第２の磁電変換素子２３Ｂが検出する感磁方向が第２感磁方向Ｓ２２になるように配設されている。ここでいう感磁方向とは、磁電変換素子２３が検出する値がプラスになる向きを示している。一方、図８に示すように、第１の磁電変換素子２３Ａが配設される第１の空隙Ｋ２１における誘導磁界の向きが第１磁界の向きＭ２１となっており、第２の磁電変換素子２３Ｂが配設される第２の空隙Ｋ２２における誘導磁界の向きが第２磁界の向きＭ２２となっている。このため、第１の磁電変換素子２３Ａに加わる誘導磁界の第１磁界の向きＭ２１と第１の磁電変換素子２３Ａが検出する第１感磁方向Ｓ２１とがなす角、つまり０°と、第２の磁電変換素子２３Ｂに加わる誘導磁界の第２磁界の向きＭ２２と第２の磁電変換素子２３Ｂが検出する第２感磁方向Ｓ２２とがなす角、つまり９０°と、異なっている。これにより、２つの磁電変換素子２３（２３Ａ、２３Ｂ）で検出される出力値が異なるので、この２つの磁電変換素子２３（２３Ａ、２３Ｂ）で検出される出力値の差分を演算装置１７で演算して比較することができる。 Further, as shown in FIG. 8, the magnetic sensing direction detected by the first magnetoelectric conversion element 23A is arranged to be the first magnetic sensing direction S21, and the sensitivity detected by the second magnetoelectric conversion element 23B. It arrange | positions so that a magnetic direction may turn into 2nd magnetosensitive direction S22. The magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric conversion element 23 is positive. On the other hand, as shown in FIG. 8, the direction of the induced magnetic field in the first gap K21 in which the first magnetoelectric conversion element 23A is disposed is the first magnetic field direction M21, and the second magnetoelectric conversion element 23B. The direction of the induced magnetic field in the second gap K22 in which is disposed is the second magnetic field direction M22. Therefore, the angle formed by the first magnetic field direction M21 of the first magnetic field applied to the first magnetoelectric transducer 23A and the first magnetosensitive direction S21 detected by the first magnetoelectric transducer 23A, that is, 0 °, This is different from the angle formed by the direction M22 of the second magnetic field of the induced magnetic field applied to the magnetoelectric conversion element 23B and the second magnetosensitive direction S22 detected by the second magnetoelectric conversion element 23B, that is, 90 °. Accordingly, since the output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) are different, the difference between the output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) is calculated by the arithmetic unit 17. Can be compared.
　更に、本発明の第２実施形態では、電流路ＣＢと第１の磁電変換素子２３Ａとの間の総合の静電容量Ｃ３と、電流路ＣＢと第２の磁電変換素子２３Ｂとの間の総合の静電容量Ｃ４とが等しくなるように調整されている。これにより、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）に付加された静電容量を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。 Further, in the second embodiment of the present invention, the total capacitance C3 between the current path CB and the first magnetoelectric conversion element 23A, and the total between the current path CB and the second magnetoelectric conversion element 23B. The capacitance C4 is adjusted to be equal. Thereby, the electrostatic capacitance added to each magnetoelectric conversion element 23 (23A, 23B) can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected.
　更に、本発明の第２実施形態では、図６Ｃないし図８に示すように、電流路ＣＢと磁性体コア２１との間に、２つの誘電体２４、つまり第１の誘電体２４Ａと第２の誘電体２４Ｂとが設けられている。これにより、この誘電体２４（第１の誘電体２４Ａ及び第２の誘電体２４Ｂ）の誘電率や大きさを変えることにより、電流路ＣＢと第１の磁電変換素子２３Ａとの間の総合の静電容量Ｃ３と、電流路ＣＢと第２の磁電変換素子２３Ｂとの間の総合の静電容量Ｃ４とを等しくする、前述した調整が容易にでき、それぞれの総合の静電容量（Ｃ３とＣ４）をより等しくすることができる。このため、２つの磁電変換素子２３（２３Ａ、２３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 Further, in the second embodiment of the present invention, as shown in FIGS. 6C to 8, two dielectrics 24, that is, the first dielectric 24A and the second dielectric are provided between the current path CB and the magnetic core 21. The dielectric 24B is provided. As a result, by changing the dielectric constant and size of the dielectric 24 (the first dielectric 24A and the second dielectric 24B), the total current between the current path CB and the first magnetoelectric transducer 23A is changed. The above-described adjustment can be easily performed to make the capacitance C3 equal to the total capacitance C4 between the current path CB and the second magnetoelectric transducer 23B, and each total capacitance (C3 and C4) can be made more equal. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、誘電体２４には、材質の制限は無く、合成樹脂や酸化物等で良く、非磁性であれば金属でも良い。また、図６Ｃに示すように、２つの誘電体２４（第１の誘電体２４Ａ及び第２の誘電体２４Ｂ）の厚みを同じにして、電流路ＣＢと磁性体コア２１との間に圧入するように配置すると、誘電体２４は、電流路ＣＢを固定するとともに、電流路ＣＢを磁性体コア２１の中心に位置させる役割を担い、ひいては電流路ＣＢと２つの磁電変換素子２３（２３Ａ、２３Ｂ）のそれぞれとの距離を等距離にする役割を担っている。 The material of the dielectric 24 is not limited, and may be a synthetic resin or an oxide, and may be a metal if it is non-magnetic. Further, as shown in FIG. 6C, the thicknesses of the two dielectrics 24 (the first dielectric 24A and the second dielectric 24B) are made the same and press-fitted between the current path CB and the magnetic core 21. In this arrangement, the dielectric 24 fixes the current path CB and plays a role of positioning the current path CB at the center of the magnetic core 21, and thus the current path CB and the two magnetoelectric transducers 23 (23 </ b> A, 23 </ b> B). ) Is the same distance from each other.
　また、本発明の第２実施形態では、図８に示すように、第１磁界の向きＭ２１と第１感磁方向Ｓ２１とが平行であり、第２磁界の向きＭ２２と第２感磁方向Ｓ２２とが直交になるように、第１の空隙Ｋ２１及び第２の空隙Ｋ２２に対して、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂを配設している。これによれば、第２の磁電変換素子２３Ｂが受ける誘導磁界、つまり第２磁界の向きＭ２２の磁界は０になり、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂがそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂとを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 In the second embodiment of the present invention, as shown in FIG. 8, the first magnetic field direction M21 and the first magnetic sensing direction S21 are parallel, and the second magnetic field direction M22 and the second magnetic sensitive direction S22. And the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are arranged in the first gap K21 and the second gap K22. According to this, the induced magnetic field received by the second magnetoelectric conversion element 23B, that is, the magnetic field of the second magnetic field direction M22 becomes 0, and the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B have different angles. The external magnetic field received at will be different. Thereby, by comparing the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
　また、本発明の第２実施形態では、図５及び図６に示すように、同じ大きさ及び形状で形成された第１の空隙Ｋ２１と第２の空隙Ｋ２２とに、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂが各々の空隙（Ｋ２１、Ｋ２２）の中心に位置するように配置されているので、磁性体コア２１と第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの距離が等しくなっている。また、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂが同じ外形（パッケージングサイズ）で形成されているので、磁性体コア２１と第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの対向面積が等しくなっている。これにより、図７に示す静電容量、Ｃ１４とＣ２４、及びＣ１５とＣ２５が同等になる。 Moreover, in 2nd Embodiment of this invention, as shown in FIG.5 and FIG.6, the 1st magnetoelectric conversion element is made into the 1st space | gap K21 and the 2nd space | gap K22 which were formed by the same magnitude | size and shape. Since 23A and the second magnetoelectric conversion element 23B are arranged so as to be positioned at the center of each gap (K21, K22), the magnetic core 21, the first magnetoelectric conversion element 23A, and the second magnetoelectric conversion element The distance to 23B is equal. Further, since the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are formed with the same outer shape (packaging size), the magnetic core 21, the first magnetoelectric conversion element 23A, and the second magnetoelectric conversion The area facing the element 23B is equal. As a result, the capacitances C 14 and C 24 , and C 15 and C 25 shown in FIG. 7 are equivalent.
　更に、図５及び図６に示すように、第１の空隙Ｋ２１と第２の空隙Ｋ２２とが電流路ＣＢの中心軸Ａｊに対して９０°でしかも等距離になるように、配設されているので、電流路ＣＢと第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの距離を等しく配置することができる。また、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂが同じ外形（パッケージングサイズ）で形成されているので、電流路ＣＢと第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの対向面積が等しくなっている。これにより、図７に示す静電容量、Ｃ１６とＣ２６が同等になる。 Further, as shown in FIGS. 5 and 6, the first gap K21 and the second gap K22 are arranged so as to be 90 ° and equidistant from the central axis Aj of the current path CB. Therefore, the distance between the current path CB and the first and second magnetoelectric conversion elements 23A and 23B can be arranged equally. Further, since the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are formed with the same outer shape (packaging size), the current path CB, the first magnetoelectric conversion element 23A, and the second magnetoelectric conversion element The opposing area to 23B is equal. As a result, the capacitances C 16 and C 26 shown in FIG. 7 become equivalent.
　以上のようなことから、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）に付加される静電容量がより同等になるので、電流センサ１０２を作製する際に、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）の総合の静電容量（Ｃ３、Ｃ４）をより等しくすることが容易である。 For the above reasons, the capacitances added to the respective magnetoelectric conversion elements 23 (23A, 23B) become more equal. Therefore, when the current sensor 102 is manufactured, the respective magnetoelectric conversion elements 23 (23A, 23A, It is easy to make the total capacitance (C3, C4) of 23B) more equal.
　以上により、本発明の電流センサ１０２は、第１磁界の向きＭ２１と第１感磁方向Ｓ２１とがなす角と、第２磁界の向きＭ２２と第２感磁方向Ｓ２２とがなす角と、が異なり、電流路ＣＢと第１の磁電変換素子２３Ａとの間の総合の静電容量Ｃ３と、電流路ＣＢと第２の磁電変換素子２３Ｂとの間の総合の静電容量Ｃ４とが等しいので、２つの磁電変換素子２３（２３Ａ、２３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電結合に起因するノイズの影響を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。したがって、精度の高い電流値の計測ができる電流センサ１０２を提供することができる。 As described above, the current sensor 102 of the present invention includes the angle formed by the first magnetic field direction M21 and the first magnetic sensing direction S21, and the angle formed by the second magnetic field direction M22 and the second magnetic sensitive direction S22. Unlikely, the total capacitance C3 between the current path CB and the first magnetoelectric conversion element 23A is equal to the total capacitance C4 between the current path CB and the second magnetoelectric conversion element 23B. When the difference between the different output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) is calculated by the calculation device 17, the influence of noise caused by electrostatic coupling can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide the current sensor 102 that can measure the current value with high accuracy.
　また、電流路ＣＢと磁性体コア２１との間に誘電体２４（第１の誘電体２４Ａ及び第２の誘電体２４Ｂ）を設けるので、この誘電体２４（第１の誘電体２４Ａ及び第２の誘電体２４Ｂ）の誘電率や大きさを変えることにより、電流路ＣＢと第１の磁電変換素子２３Ａとの間の総合の静電容量Ｃ３と、電流路ＣＢと第２の磁電変換素子２３Ｂとの間の総合の静電容量Ｃ４とを等しくする前述した調整が容易にでき、それぞれの総合の静電容量（Ｃ３とＣ４）をより等しくすることができる。このため、２つの磁電変換素子２３（２３Ａ、２３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 Further, since the dielectric 24 (first dielectric 24A and second dielectric 24B) is provided between the current path CB and the magnetic core 21, the dielectric 24 (first dielectric 24A and second dielectric 24A) is provided. By changing the dielectric constant and size of the dielectric 24B), the total capacitance C3 between the current path CB and the first magnetoelectric conversion element 23A, and the current path CB and the second magnetoelectric conversion element 23B are changed. The above-described adjustment to make the total electrostatic capacity C4 between the two terminals equal to each other can be facilitated, and the respective total electrostatic capacity (C3 and C4) can be made more equal. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric conversion elements 23 (23A, 23B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、第１磁界の向きＭ２１と第１感磁方向Ｓ２１とが平行であるとともに、第２磁界の向きＭ２２と第２感磁方向Ｓ２２とが直交するので、第２の磁電変換素子２３Ｂが受ける誘導磁界は０になり、つまり、第２磁界の向きＭ２２の磁界を感じなくなり、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂがそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子２３Ａと第２の磁電変換素子２３Ｂとを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 In addition, since the first magnetic field direction M21 and the first magnetic sensing direction S21 are parallel and the second magnetic field direction M22 and the second magnetic sensing direction S22 are orthogonal to each other, the second magnetoelectric conversion element 23B receives the magnetic field. The induced magnetic field becomes 0, that is, the magnetic field of the second magnetic field direction M22 is not felt, and the external magnetic fields received at different angles by the first magnetoelectric transducer 23A and the second magnetoelectric transducer 23B are different. . Thereby, by comparing the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
　また、電流路ＣＢと第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの距離及び対向面積が等しいとともに、磁性体コア２１と第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂとの距離及び対向面積が等しいので、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）と電流路ＣＢ、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）と磁性体コア２１との静電容量が同等になる。このことにより、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）に重畳される浮遊容量である静電容量がより同等になるので、電流センサ１０２を作製する際に、それぞれの磁電変換素子２３（２３Ａ、２３Ｂ）の総合の静電容量（Ｃ３、Ｃ４）をより等しくすることが容易であり、静電結合に起因するノイズの影響をより一層低減することができる。 Further, the distance and the facing area between the current path CB and the first and second magnetoelectric conversion elements 23A and 23B are equal, and the magnetic core 21, the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element Since the distance and the facing area to 23B are equal, the respective magnetoelectric transducers 23 (23A, 23B) and current paths CB, the respective magnetoelectric transducers 23 (23A, 23B) and the magnetic core 21 have the same capacitance. become. As a result, the electrostatic capacitance, which is the stray capacitance superimposed on each of the magnetoelectric conversion elements 23 (23A, 23B), becomes more equal. Therefore, when the current sensor 102 is manufactured, each of the magnetoelectric conversion elements 23 (23A) 23B), it is easy to make the total capacitance (C3, C4) more equal, and the influence of noise caused by electrostatic coupling can be further reduced.
　［第３実施形態］
　図９は、本発明の第３実施形態の電流センサ１０３を説明する斜視図である。図１０は、本発明の第３実施形態の電流センサ１０３を説明する図であって、図１０Ａは、図９に示すＹ２側から見た正面図であり、図１０Ｂは、図９に示すＸ１側から見た側面図であり、図１０Ｃは、図９に示すＺ１側から見た上面図である。なお、説明を容易にするため、図１０Ｃでは、第２基板３９Ｂ及び第２の磁電変換素子３３Ｂを省略している。図１１は、本発明の第３実施形態の電流センサにおける静電容量を示した模式図である。図１２は、本発明の第３実施形態の電流センサにおける誘導磁界の向きと磁電変換素子３３の感磁方向を示した模式図である。第３実施形態の電流センサ１０３は、第１実施形態に対し、磁性体コア３１の空隙Ｋ３３及び磁電変換素子３３の配設位置が主に異なる。なお、第１実施形態と同一構成については、同一符号を付して詳細な説明は省略する。 [Third Embodiment]
FIG. 9 is a perspective view illustrating the current sensor 103 according to the third embodiment of the present invention. 10A and 10B are diagrams illustrating the current sensor 103 according to the third embodiment of the present invention. FIG. 10A is a front view seen from the Y2 side shown in FIG. 9, and FIG. 10B is X1 shown in FIG. 10C is a side view seen from the side, and FIG. 10C is a top view seen from the Z1 side shown in FIG. 9. For ease of explanation, the second substrate 39B and the second magnetoelectric transducer 33B are omitted in FIG. 10C. FIG. 11 is a schematic diagram illustrating the capacitance in the current sensor according to the third embodiment of the present invention. FIG. 12 is a schematic diagram showing the direction of the induced magnetic field and the magnetosensitive direction of the magnetoelectric transducer 33 in the current sensor according to the third embodiment of the present invention. The current sensor 103 of the third embodiment is mainly different from the first embodiment in the arrangement positions of the gap K33 of the magnetic core 31 and the magnetoelectric conversion element 33. In addition, about the same structure as 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.
　本発明の第３実施形態の電流センサ１０３は、図９及び図１０に示すように、被測定電流が流れる電流路ＣＢと、中空の矩形で電流路ＣＢを囲む位置に配設された磁性体コア３１と、電流路ＣＢに流れる電流によって発生する誘導磁界の磁気を検出する２つの磁電変換素子３３（第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂ）と、第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂとの出力の差分を演算する演算装置１７と、を備えて構成される。他に、第１の磁電変換素子３３Ａ及び演算装置１７を搭載している第１基板３９Ａと、第２の磁電変換素子３３Ｂを搭載している第２基板３９Ｂと、を備えている。なお、第１基板３９Ａ及び第２基板３９Ｂには、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂからの出力値を演算装置１７に伝送するための配線パターン（図示していない）が設けられている。 As shown in FIGS. 9 and 10, the current sensor 103 according to the third embodiment of the present invention includes a current path CB through which a current to be measured flows and a magnetic body disposed at a position surrounding the current path CB with a hollow rectangle. Core 31, two magnetoelectric conversion elements 33 (first magnetoelectric conversion element 33 </ b> A and second magnetoelectric conversion element 33 </ b> B) for detecting the magnetism of the induced magnetic field generated by the current flowing in current path CB, and the first magnetoelectric conversion And an arithmetic device 17 that calculates a difference in output between the element 33A and the second magnetoelectric conversion element 33B. In addition, a first substrate 39A on which the first magnetoelectric conversion element 33A and the arithmetic unit 17 are mounted, and a second substrate 39B on which the second magnetoelectric conversion element 33B is mounted are provided. A wiring pattern (not shown) for transmitting output values from the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B to the arithmetic unit 17 is provided on the first substrate 39A and the second substrate 39B. Is provided.
　磁性体コア３１は、軟磁性体、例えばパーマロイ（Ｆｅ－Ｎｉ合金）を用い、図９及び図１０に示すように、中空の矩形に形成され、磁性体コア３１には、その一辺側に空隙Ｋ３３が設けられて構成されている。そして、金属製の電流路ＣＢを囲むように磁性体コア３１が配設され、電流路ＣＢの回りに発生する磁束を集束している。なお、電流路ＣＢの配設及び固定には、図示はしていないが、保持部材等を用いて電流路ＣＢを保持することによって容易に達成できる。また、磁性体コア２１にパーマロイ（Ｆｅ－Ｎｉ合金）を用いたが、軟磁性材料であれば良く、他の鉄系材料であるセンダスト（Ｆｅ－Ｓｉ－Ａｌ合金）、珪素鋼等や、非鉄系のアモルファス磁性合金等、酸化物のフェライトなどでも良い。 The magnetic core 31 is made of a soft magnetic material, such as permalloy (Fe—Ni alloy), and is formed into a hollow rectangle as shown in FIGS. 9 and 10, and the magnetic core 31 has a gap on one side thereof. K33 is provided and configured. And the magnetic body core 31 is arrange | positioned so that the metal current path CB may be enclosed, and the magnetic flux which generate | occur | produces around the current path CB is converged. Although not shown, the arrangement and fixing of the current path CB can be easily achieved by holding the current path CB using a holding member or the like. In addition, although permalloy (Fe—Ni alloy) is used for the magnetic core 21, any soft magnetic material may be used, such as Sendust (Fe—Si—Al alloy), silicon steel, etc., other non-ferrous materials, non-ferrous Amorphous magnetic alloy, oxide ferrite, etc. may be used.
　磁電変換素子３３は、電流路ＣＢに電流が流れたときに発生する磁気を検出する電流のセンサであって、例えば、巨大磁気抵抗効果を用いた磁気抵抗素子（ＧＭＲ(Giant Magneto Resistive)素子と言う）を用いている。ＧＭＲ素子は、例えば、反強磁性層がα－Ｆｅ２Ｏ３層、ピン層がＮｉＦｅ層、中間層がＣｕ層、フリー層がＮｉＦｅ層から形成されている。そして、この磁電変換素子３３は、ＧＭＲ素子をシリコン基板上に作製し、切り出されたＧＭＲチップを熱硬化性の合成樹脂でパッケージングしている。また、磁電変換素子３３は、図９及び図１０に示すように、２つの磁電変換素子３３、つまり第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂとを備えている。なお、第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂの外形（パッケージングサイズ）は、同じサイズのものを選定している。 The magnetoelectric conversion element 33 is a current sensor for detecting magnetism generated when a current flows through the current path CB. For example, the magnetoelectric conversion element 33 is a magnetoresistive element (GMR (Giant Magneto Resistive) element using a giant magnetoresistive effect). Say). In the GMR element, for example, an antiferromagnetic layer is formed of an α-Fe 2 O 3 layer, a pinned layer is formed of a NiFe layer, an intermediate layer is formed of a Cu layer, and a free layer is formed of a NiFe layer. In the magnetoelectric conversion element 33, a GMR element is produced on a silicon substrate, and the cut out GMR chip is packaged with a thermosetting synthetic resin. Further, as shown in FIGS. 9 and 10, the magnetoelectric conversion element 33 includes two magnetoelectric conversion elements 33, that is, a first magnetoelectric conversion element 33A and a second magnetoelectric conversion element 33B. Note that the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B have the same outer shape (packaging size).
　また、図９及び図１０に示すように、第１の磁電変換素子３３Ａがプリント配線板（ＰＣＢ：Printed Circuit Board）等の第１基板３９Ａに搭載され、第２の磁電変換素子３３Ｂがプリント配線板（ＰＣＢ：Printed Circuit Board）等の第２基板３９Ｂに搭載され、空隙Ｋ３３に磁性体コア３１の厚み方向に配設されるとともに、電流路ＣＢに対して等距離になるように縦に並べて配設されている。これにより、図１１に示すように、第１の磁電変換素子３３Ａと磁性体コア３１との間に静電容量がＣ１７及びＣ１８として生じ、第１の磁電変換素子３３Ａと電流路ＣＢとの間に静電容量がＣ１９として生じ、磁性体コア３１と電流路ＣＢとの間に静電容量がＣ３７として生じて、結果として、電流路ＣＢと第１の磁電変換素子３３Ａとの間の総合の静電容量Ｃ５は次式のようになる。 Further, as shown in FIGS. 9 and 10, the first magnetoelectric conversion element 33A is mounted on a first substrate 39A such as a printed circuit board (PCB), and the second magnetoelectric conversion element 33B is printed wiring. It is mounted on a second substrate 39B such as a printed circuit board (PCB), and is arranged in the gap K33 in the thickness direction of the magnetic core 31 and arranged vertically so as to be equidistant from the current path CB. It is arranged. As a result, as shown in FIG. 11, capacitances are generated as C 17 and C 18 between the first magnetoelectric conversion element 33A and the magnetic core 31, and the first magnetoelectric conversion element 33A and the current path CB resulting capacitance as C 19 between the electrostatic capacitance between the magnetic core 31 and the current path CB is generated as C 37, as a result, a current path CB and the first electromagnetic element 33A The total capacitance C5 in the meantime is as follows.
　Ｃ５＝Ｃ１９＋Ｃ３７×Ｃ１７／（Ｃ３７＋Ｃ１７）＋Ｃ３７×Ｃ１８／（Ｃ３７＋Ｃ１８） C5 = C 19 + C 37 × C 17 / (C 37 + C 17) + C 37 × C 18 / (C 37 + C 18)
　同様にして、第２の磁電変換素子３３Ｂと磁性体コア３１との間に静電容量がＣ２７及びＣ２８として生じ、第２の磁電変換素子３３Ｂと電流路ＣＢとの間に静電容量がＣ２９として生じて、結果として、電流路ＣＢと第２の磁電変換素子３３Ｂとの間の総合の静電容量Ｃ６は次式にようになる。 Similarly, the capacitance between the second magneto-electric conversion element 33B and the magnetic core 31 is produced as a C 27 and C 28, the capacitance between the second magneto-electric conversion element 33B and the current path CB There occurs as C 29, as a result, the capacitance C6 of the total between the current paths CB and second magnetoelectric conversion element 33B are as the following equation.
　Ｃ６＝Ｃ２９＋Ｃ３７×Ｃ２７／（Ｃ３７＋Ｃ２７）＋Ｃ３７×Ｃ２８／（Ｃ３７＋Ｃ２８） C6 = C 29 + C 37 × C 27 / (C 37 + C 27) + C 37 × C 28 / (C 37 + C 28)
　また、図１２に示すように、第１の磁電変換素子３３Ａが検出する感磁方向が第１感磁方向Ｓ３１になるように配設されるとともに、第２の磁電変換素子３３Ｂが検出する感磁方向が第１感磁方向Ｓ３１とは逆向きの第２感磁方向Ｓ３２になるように配設されている。ここでいう感磁方向とは、磁電変換素子３３が検出する値がプラスになる向きを示している。一方、図１２に示すように、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂが配設される空隙Ｋ３３における磁界の向きが、誘導磁界である磁界の向きＭ３３となっている。このため、第１の磁電変換素子３３Ａに加わる磁界の向きＭ３３と第１の磁電変換素子３３Ａが検出する第１感磁方向Ｓ３１とがなす角、つまり０°と、第２の磁電変換素子３３Ｂに加わる磁界の向きＭ３３と第２の磁電変換素子３３Ｂが検出する第２感磁方向Ｓ３２とがなす角、つまり１８０°と、異なっている。これにより、２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される出力値が異なるので、この２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される出力値の差分を演算装置１７で演算して比較することができる。 Further, as shown in FIG. 12, the magnetic sensing direction detected by the first magnetoelectric conversion element 33A is arranged to be the first magnetic sensing direction S31, and the sensitivity detected by the second magnetoelectric conversion element 33B. The magnetic direction is arranged to be a second magnetic sensing direction S32 opposite to the first magnetic sensing direction S31. The magnetosensitive direction here indicates a direction in which the value detected by the magnetoelectric conversion element 33 is positive. On the other hand, as shown in FIG. 12, the direction of the magnetic field in the gap K33 in which the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are disposed is a magnetic field direction M33 that is an induction magnetic field. Therefore, the angle formed by the direction M33 of the magnetic field applied to the first magnetoelectric conversion element 33A and the first magnetosensitive direction S31 detected by the first magnetoelectric conversion element 33A, that is, 0 °, and the second magnetoelectric conversion element 33B. Is different from an angle formed by the direction M33 of the magnetic field applied to the second magnetic sensing direction S32 detected by the second magnetoelectric transducer 33B, that is, 180 °. As a result, the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) are different, so the difference between the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) is calculated by the arithmetic unit 17. Can be compared.
　更に、本発明の第３実施形態では、電流路ＣＢと第１の磁電変換素子３３Ａとの間の総合の静電容量Ｃ５と、電流路ＣＢと第２の磁電変換素子３３Ｂとの間の総合の静電容量Ｃ６とが等しくなるように調整されている。これにより、それぞれの磁電変換素子３３（３３Ａ、３３Ｂ）に付加された静電容量を正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。また、この調整は、電流路ＣＢの配設位置を少し移動させることや、場合によっては、磁電変換素子３３と磁性体コア３１との間に誘電体を入れること等によって行われる。 Further, in the third embodiment of the present invention, the total capacitance C5 between the current path CB and the first magnetoelectric conversion element 33A and the total capacitance between the current path CB and the second magnetoelectric conversion element 33B. The capacitance C6 is adjusted to be equal. Thereby, the electrostatic capacitance added to each magnetoelectric conversion element 33 (33A, 33B) can be accurately subtracted. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Further, this adjustment is performed by slightly moving the arrangement position of the current path CB, or by inserting a dielectric between the magnetoelectric conversion element 33 and the magnetic core 31 in some cases.
　また、本発明の第３実施形態では、図１０及び図１１に示すように、磁性体コア３１の厚み方向に配設された第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂが電流路ＣＢに対して等距離になるように縦に並べて配設されるので、電流路ＣＢと第１の磁電変換素子３３Ａとの間の総合の静電容量Ｃ５と、電流路ＣＢと第２の磁電変換素子３３Ｂとの間の総合の静電容量Ｃ６とをより等しくすることができる。このため、２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 Moreover, in 3rd Embodiment of this invention, as shown in FIG.10 and FIG.11, the 1st magnetoelectric conversion element 33A and the 2nd magnetoelectric conversion element 33B which were arrange | positioned in the thickness direction of the magnetic body core 31 are electric current. Since they are arranged vertically so as to be equidistant with respect to the path CB, the total capacitance C5 between the current path CB and the first magnetoelectric transducer 33A, the current path CB and the second path The total capacitance C6 between the magnetoelectric conversion element 33B can be made more equal. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、本発明の第３実施形態では、図１２に示すように、磁界の向きＭ３３と第１感磁方向Ｓ３１とが平行であるとともに、磁界の向きＭ３３と第２感磁方向Ｓ３２とが平行であるので、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂが受けるそれぞれの誘導磁界は絶対値として同じになり、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂがそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂとを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 In the third embodiment of the present invention, as shown in FIG. 12, the magnetic field direction M33 and the first magnetic sensing direction S31 are parallel, and the magnetic field direction M33 and the second magnetic sensing direction S32 are parallel. Therefore, the induction magnetic fields received by the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are the same as absolute values, and the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are respectively External magnetic fields received at different angles will be different. Thereby, by comparing the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
　以上により、本発明の電流センサ１０３は、磁界の向きＭ３３と第１感磁方向Ｓ３１とがなす角と、磁界の向きＭ３３と第２感磁方向Ｓ３２とがなす角と、が異なるので、２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される出力値が異なり、２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される出力値の差分を演算装置１７で演算して比較することができる。さらに、電流路ＣＢと第１の磁電変換素子３３Ａとの間の総合の静電容量Ｃ５と、電流路ＣＢと第２の磁電変換素子３３Ｂとの間の総合の静電容量Ｃ６とが等しいので、静電結合に起因するノイズの影響を正確に打ち消すことができる。このことにより、同じタイミングで入ってくるノイズの影響を低減することができ、信号のみを正確に検出することができる。したがって、精度の高い電流値の計測ができる電流センサ１０３を提供することができる。 As described above, the current sensor 103 of the present invention is different in the angle formed between the magnetic field direction M33 and the first magnetic sensing direction S31 and the angle formed between the magnetic field direction M33 and the second magnetic sensitive direction S32. The output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) are different, and the difference between the output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) is calculated by the arithmetic unit 17 and compared. it can. Furthermore, the total capacitance C5 between the current path CB and the first magnetoelectric conversion element 33A is equal to the total capacitance C6 between the current path CB and the second magnetoelectric conversion element 33B. Thus, it is possible to accurately cancel the influence of noise caused by electrostatic coupling. As a result, the influence of noise entering at the same timing can be reduced, and only the signal can be accurately detected. Therefore, it is possible to provide the current sensor 103 that can measure the current value with high accuracy.
　また、磁性体コア３１の厚み方向に配設された第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂが電流路ＣＢに対して等距離になるように縦に並べて配設されるので、電流路ＣＢと第１の磁電変換素子３３Ａとの間の総合の静電容量Ｃ５と、電流路ＣＢと第２の磁電変換素子３３Ｂとの間の総合の静電容量Ｃ６とをより等しくすることができる。このため、２つの磁電変換素子３３（３３Ａ、３３Ｂ）で検出される異なる出力値の差分を演算装置１７で演算する際に、静電容量に起因するノイズの影響をより正確に差し引くことができる。このことにより、同じタイミングで入ってくるノイズの影響をより低減することができ、信号のみをより正確に検出することができる。 In addition, the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B arranged in the thickness direction of the magnetic core 31 are arranged vertically so as to be equidistant from the current path CB. The total capacitance C5 between the current path CB and the first magnetoelectric conversion element 33A and the total capacitance C6 between the current path CB and the second magnetoelectric conversion element 33B are made more equal. be able to. For this reason, when calculating the difference between the different output values detected by the two magnetoelectric conversion elements 33 (33A, 33B) by the calculation device 17, it is possible to subtract the influence of noise caused by the capacitance more accurately. . As a result, the influence of noise that enters at the same timing can be further reduced, and only the signal can be detected more accurately.
　また、磁界の向きＭ３３と第１感磁方向Ｓ３１とが平行であるとともに、磁界の向きＭ３３と第２感磁方向Ｓ３２とが平行であるので、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂが受けるそれぞれの誘導磁界は絶対値として同じになり、第１の磁電変換素子３３Ａ及び第２の磁電変換素子３３Ｂがそれぞれ違う角度で受ける外部磁場はそれぞれ違うようになる。このことにより、第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂとを比較することで、外部磁場の影響を算出して相殺でき、外部磁場からの影響を低減することが容易にできる。 Further, since the magnetic field direction M33 and the first magnetic sensing direction S31 are parallel, and the magnetic field direction M33 and the second magnetic sensing direction S32 are parallel, the first magnetoelectric transducer 33A and the second magnetoelectric element 33A. The induction magnetic fields received by the conversion element 33B are the same in absolute value, and the external magnetic fields received by the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B at different angles are different. Thereby, by comparing the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, the influence of the external magnetic field can be calculated and canceled, and the influence from the external magnetic field can be easily reduced. .
　なお、本発明は上記実施形態に限定されるものではなく、例えば次のように変形して実施することができ、これらの実施形態も本発明の技術的範囲に属する。 It should be noted that the present invention is not limited to the above-described embodiment, and can be implemented by being modified as follows, for example, and these embodiments also belong to the technical scope of the present invention.
　図１３は、本発明の第１実施形態の電流センサ１０１の変形例を説明する図であって、図１３Ａは、磁電変換素子１３（１３Ａ、１３Ｂ）の配設位置を変えた変形例１の電流センサＣ１０１であって、図１３Ｂは、磁電変換素子１３（１３Ｂ）の配設位置を変えた変形例２の電流センサＣ２０１である。図１４は、本発明の第１実施形態及び第２実施形態の電流センサ（１０１、１０２）の変形例を説明する模式図であって、図１４Ａは、第１実施形態の磁電変換素子１３の配設位置を変えた変形例３であって、図１４Ｂは、第２実施形態の磁電変換素子２３の配設位置を変えた変形例４である。図１５は、本発明の第１実施形態及び第２実施形態の電流センサ（１０１、１０２）の変形例を説明する図であって、図１５Ａは、第１実施形態の電流路ＣＢ及び磁性体コア１１を変えた変形例５であって、図１５Ｂは、第２実施形態の電流路ＣＢ及び磁性体コア２１を変えた変形例６である。図１６は、本発明の第２実施形態の電流センサ１０２の変形例を説明する図であって、磁電変換素子２３の配設位置を変えた変形例９の電流センサＤ１０２である。図１７は、本発明の第３実施形態の電流センサ１０３の変形例を説明する上面図であって、図１７Ａは、第３実施形態の磁電変換素子３３の配設位置を変えた変形例１０の電流センサＤ１１３であって、図１７Ｂは、第３実施形態の磁電変換素子３３の配設位置を変えた変形例１１の電流センサＤ１２３である。 FIG. 13 is a diagram for explaining a modification of the current sensor 101 according to the first embodiment of the present invention. FIG. 13A shows a modification 1 in which the arrangement position of the magnetoelectric transducer 13 (13A, 13B) is changed. FIG. 13B is a current sensor C101 of Modification 2 in which the arrangement position of the magnetoelectric conversion element 13 (13B) is changed. FIG. 14 is a schematic diagram for explaining a modification of the current sensors (101, 102) of the first embodiment and the second embodiment of the present invention. FIG. 14A shows the magnetoelectric conversion element 13 of the first embodiment. FIG. 14B is a fourth modification in which the arrangement position of the magnetoelectric transducer 23 of the second embodiment is changed. FIG. 15 is a diagram for explaining a modification of the current sensors (101, 102) according to the first and second embodiments of the present invention. FIG. 15A shows the current path CB and the magnetic body according to the first embodiment. FIG. 15B is a sixth modification in which the core 11 is changed, and FIG. 15B is a sixth modification in which the current path CB and the magnetic core 21 of the second embodiment are changed. FIG. 16 is a diagram for explaining a modification of the current sensor 102 according to the second embodiment of the present invention, and is a current sensor D102 of the modification 9 in which the arrangement position of the magnetoelectric conversion element 23 is changed. FIG. 17 is a top view illustrating a modification of the current sensor 103 according to the third embodiment of the present invention. FIG. 17A illustrates a modification 10 in which the arrangement position of the magnetoelectric transducer 33 according to the third embodiment is changed. FIG. 17B is a current sensor D123 of Modification 11 in which the arrangement position of the magnetoelectric conversion element 33 of the third embodiment is changed.
　＜変形例１＞
　上記第１実施形態では、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂを第１の空隙Ｋ１１と第２の空隙Ｋ１２の各々の空隙（Ｋ１１、Ｋ１２）の中心に位置するように配設して、磁性体コア１１と第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂとの静電容量、Ｃ１１とＣ２１、及びＣ１２とＣ２２が同等になるように好適に構成したが、各々ずらして配設しても良い。なお、図１３Ａに示すように、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂを第１の空隙Ｋ１１と第２の空隙Ｋ１２の各々の空隙（Ｋ１１、Ｋ１２）に対して、相対的位置関係を同等にすれば、同様な効果を有する。 <Modification 1>
In the first embodiment, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are positioned at the centers of the respective gaps (K11, K12) of the first gap K11 and the second gap K12. by disposing the capacitance of the magnetic core 11 and the first electromagnetic element 13A and the second magneto-electric conversion element 13B, C 11 and C 21, and C 12 and preferably as C 22 is equal to However, they may be shifted from each other. As shown in FIG. 13A, the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are relative to each of the first gap K11 and the second gap K12 (K11, K12). If the target positional relationship is made equal, the same effect is obtained.
　＜変形例２＞
　上記第１実施形態では、第１の空隙Ｋ１１と第２の空隙Ｋ１２とが電流路ＣＢの中心軸Ａｊに対して対称になるように磁性体コア１１を構成したが、第１の空隙Ｋ１１と第２の空隙Ｋ１２との配設角度を変えて構成しても良い。図１３Ｂに示す例では、磁性体コアＣ１１の第１の空隙Ｋ１１及び第２の空隙ＣＫ１２との配設角度は１３５°である。 <Modification 2>
In the first embodiment, the magnetic core 11 is configured such that the first gap K11 and the second gap K12 are symmetrical with respect to the central axis Aj of the current path CB. The arrangement angle with the second gap K12 may be changed. In the example shown in FIG. 13B, the arrangement angle of the magnetic core C11 with the first gap K11 and the second gap CK12 is 135 °.
　＜変形例３＞
　上記第１実施形態では、第１磁界の向きＭ１１と第１感磁方向Ｓ１１とが平行であり、第２磁界の向きＭ１２と第２感磁方向Ｓ１２とが平行になるように、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂを配設して好適に構成したが、第１の磁電変換素子１３Ａ及び第２の磁電変換素子１３Ｂの感磁方向を変えて構成しても良い。図１４Ａに示す例では、第１の磁電変換素子１３Ａに加わる誘導磁界の第１磁界の向きＭ１１と第１の磁電変換素子１３Ａが検出する第１感磁方向ＣＳ１１とがなす角、つまり１５°と、第２の磁電変換素子１３Ｂに加わる誘導磁界の第２磁界の向きＭ１２と第２の磁電変換素子１３Ｂが検出する第２感磁方向ＣＳ１２とがなす角、つまり７５°と、異なっている。 <Modification 3>
In the first embodiment, the first magnetic field direction M11 and the first magnetic sensing direction S11 are parallel, and the second magnetic field direction M12 and the second magnetic sensing direction S12 are parallel. Although the magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B are preferably arranged and configured, the magnetosensitive directions of the first magnetoelectric conversion element 13A and the second magnetoelectric conversion element 13B may be changed. . In the example shown in FIG. 14A, the angle formed by the first magnetic field direction M11 of the induced magnetic field applied to the first magnetoelectric transducer 13A and the first magnetosensitive direction CS11 detected by the first magnetoelectric transducer 13A, that is, 15 °. And the angle formed by the second magnetic direction CS12 detected by the second magnetoelectric conversion element 13B and the direction M12 of the second magnetic field of the induced magnetic field applied to the second magnetoelectric conversion element 13B, that is, 75 °. .
　＜変形例４＞
　上記第２実施形態では、第１磁界の向きＭ２１と第１感磁方向Ｓ２１とが平行であり、第２磁界の向きＭ２２と第２感磁方向Ｓ２２とが直交になるように、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂを配設して好適に構成したが、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂの感磁方向を変えて構成しても良い。図１４Ｂに示す例では、第１の磁電変換素子２３Ａに加わる誘導磁界の第１磁界の向きＭ２１と第１の磁電変換素子２３Ａが検出する第１感磁方向ＣＳ２１とがなす角、つまり３０°と、第２の磁電変換素子２３Ｂに加わる誘導磁界の第２磁界の向きＭ２２と第２の磁電変換素子２３Ｂが検出する第２感磁方向ＣＳ２２とがなす角、つまり６０°と、異なっている。 <Modification 4>
In the second embodiment, the first magnetic field direction M21 and the first magnetosensitive direction S21 are parallel, and the second magnetic field direction M22 and the second magnetic sensitive direction S22 are orthogonal to each other. The magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B are preferably arranged, but may be configured by changing the magnetic sensitive direction of the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B. . In the example shown in FIG. 14B, the angle formed by the first magnetic field direction M21 of the induced magnetic field applied to the first magnetoelectric transducer 23A and the first magnetosensitive direction CS21 detected by the first magnetoelectric transducer 23A, that is, 30 °. And the angle formed by the second magnetic direction CS22 detected by the second magnetoelectric conversion element 23B and the direction M22 of the second magnetic field of the induced magnetic field applied to the second magnetoelectric conversion element 23B, that is, 60 °. .
　＜変形例５及び変形例６＞
　上記第１実施形態及び第２実施形態では、電流路ＣＢの断面形状が円形状のものを用いたが、断面形状が矩形状の電流路ＣＣＢを用いても良い。その際には、図１５Ａに示すように、電流センサＣ５０１の磁性体コアＣ１２を楕円形状にすると良い。同様にして、図１５Ｂに示すように、電流センサＣ６０２の磁性体コアＣ２１を長方形の形状にすると良い。 <Modification 5 and Modification 6>
In the first embodiment and the second embodiment, the current path CB has a circular cross section, but a current path CCB having a rectangular cross section may be used. In that case, as shown to FIG. 15A, it is good to make the magnetic body core C12 of the current sensor C501 into an elliptical shape. Similarly, as shown in FIG. 15B, the magnetic core C21 of the current sensor C602 may be rectangular.
　＜変形例７＞
　上記第１実施形態及び第２実施形態では、電流路ＣＢと磁性体コア（１１、２１）との間に、２つの誘電体（１４、２４）を用いて構成したが、１つ或いは２つ以上の誘電体を用いて構成しても良い。或いは、誘電体を用いない構成でも良い。 <Modification 7>
In the first and second embodiments, two dielectrics (14, 24) are used between the current path CB and the magnetic cores (11, 21). You may comprise using the above dielectric material. Or the structure which does not use a dielectric material may be sufficient.
　＜変形例８＞
　上記第１実施形態及び第２実施形態では、電流路ＣＢと磁性体コア（１１、２１）との間に、２つの誘電体（１４、２４）を用いて構成したが、磁電変換素子（１３、２３）と磁性体コア（１１、２１）との間に、誘電体を用いて構成しても良い。この場合、同じ効果が得られる。 <Modification 8>
In the first embodiment and the second embodiment, two dielectrics (14, 24) are used between the current path CB and the magnetic cores (11, 21). However, the magnetoelectric conversion element (13 23) and the magnetic core (11, 21) may be configured using a dielectric. In this case, the same effect can be obtained.
　＜変形例９＞
　上記第２実施形態では、第１の空隙Ｋ２１と第２の空隙Ｋ２２とが電流路ＣＢの中心軸Ａｊに対して９０°になるように配設して構成したが、図１６に示すように、磁性体コアＣ７１の矩形状の角の近傍に、第１の空隙ＣＫ２１と第２の空隙ＣＫ２２を配設して構成しても良い。このため、第１の磁電変換素子２３Ａ及び第２の磁電変換素子２３Ｂを近づけて配設することができるので、外部磁場の発生源が比較的近くにある場合でも、外部磁場を同じタイミングで入ってくるノイズの影響を低減することができ、外部磁場からの影響をより確実に低減することができる。 <Modification 9>
In the second embodiment, the first gap K21 and the second gap K22 are arranged to be 90 ° with respect to the central axis Aj of the current path CB. However, as shown in FIG. The first gap CK21 and the second gap CK22 may be disposed in the vicinity of the rectangular corner of the magnetic core C71. For this reason, since the first magnetoelectric conversion element 23A and the second magnetoelectric conversion element 23B can be disposed close to each other, the external magnetic field is entered at the same timing even when the source of the external magnetic field is relatively close. The influence of the incoming noise can be reduced, and the influence from the external magnetic field can be more reliably reduced.
　＜変形例１０および変形例１１＞
　上記第３実施形態では、第１の磁電変換素子３３Ａと第２の磁電変換素子３３Ｂが磁性体コア３１の厚み方向で縦に並んで配設して構成したが、図１７Ａに示すように、同一平面上で縦列に並んで配設して構成しても良い。また、図１７Ｂに示すように、同一平面上で並列に並んで配設して構成しても良い。 <Modification 10 and Modification 11>
In the third embodiment, the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are arranged vertically in the thickness direction of the magnetic core 31, but as shown in FIG. 17A, You may arrange | position and arrange in a line on the same plane. Further, as shown in FIG. 17B, the same plane may be arranged in parallel.
　本発明は上記実施の形態に限定されず、本発明の目的の範囲を逸脱しない限りにおいて適宜変更することが可能である。 The present invention is not limited to the above-described embodiment, and can be changed as appropriate without departing from the scope of the object of the present invention.
　本出願は、２０１２年４月２７日出願の特願２０１２－１０３２９２に基づく。この内容は、全てここに含めておく。 This application is based on Japanese Patent Application No. 2012-103292 filed on April 27, 2012. All this content is included here.

Claims (9)

  1. 　被測定電流が流れる電流路と、
    前記電流路に流れる電流によって発生する誘導磁界の磁気を検出する電流センサであって、
    　前記電流路を囲むとともに、第１の空隙と第２の空隙が設けられた磁性体コアと、
    前記磁性体コアの前記第１の空隙内に設けられた第１の磁電変換素子と、
    前記磁性体コアの前記第２の空隙内に設けられた第２の磁電変換素子と、
    前記第１の磁電変換素子と前記第２の磁電変換素子との出力の差分を演算する演算装置と、を備え、
    　前記第１の磁電変換素子に加わる前記誘導磁界の第１磁界の向きと前記第１の磁電変換素子が検出する第１感磁方向とがなす角と、前記第２の磁電変換素子に加わる前記誘導磁界の第２磁界の向きと前記第２の磁電変換素子が検出する第２感磁方向とがなす角と、が異なり、
    　前記電流路と前記第１の磁電変換素子との間の総合の静電容量と、前記電流路と前記第２の磁電変換素子との間の総合の静電容量とが等しいことを特徴とする電流センサ。     A current path through which the current to be measured flows;
    A current sensor for detecting magnetism of an induced magnetic field generated by a current flowing in the current path,
    A magnetic core surrounding the current path and provided with a first gap and a second gap;
    A first magnetoelectric conversion element provided in the first gap of the magnetic core;
    A second magnetoelectric transducer provided in the second gap of the magnetic core;
    An arithmetic device that calculates a difference in output between the first magnetoelectric conversion element and the second magnetoelectric conversion element,
    The angle formed by the direction of the first magnetic field of the induced magnetic field applied to the first magnetoelectric transducer and the first magnetosensitive direction detected by the first magnetoelectric transducer, and the second magnetoelectric transducer applied to the second magnetoelectric transducer The angle formed by the direction of the second magnetic field of the induced magnetic field and the second magnetosensitive direction detected by the second magnetoelectric transducer is different,
    A total capacitance between the current path and the first magnetoelectric conversion element is equal to a total capacitance between the current path and the second magnetoelectric conversion element. Current sensor.
  2. 　前記電流路と前記磁性体コアとの間に誘電体を設けることを特徴とする請求項１に記載の電流センサ。 The current sensor according to claim 1, wherein a dielectric is provided between the current path and the magnetic core.
  3. 　前記第１磁界の向きと前記第１感磁方向とが平行であり、
    　前記第２磁界の向きと前記第２感磁方向とが平行であることを特徴とする請求項１または請求項２に記載の電流センサ。     The direction of the first magnetic field and the first magnetosensitive direction are parallel;
    The current sensor according to claim 1, wherein the direction of the second magnetic field is parallel to the second magnetic sensing direction.
  4. 　前記第１磁界の向きと前記第２磁界の向きとが逆向きであることを特徴とする請求項３に記載の電流センサ。 4. The current sensor according to claim 3, wherein the direction of the first magnetic field is opposite to the direction of the second magnetic field.
  5. 　前記第１磁界の向きと前記第１感磁方向とが平行であり、
    　前記第２磁界の向きと前記第２感磁方向とが直交することを特徴とする請求項１または請求項２に記載の電流センサ。     The direction of the first magnetic field and the first magnetosensitive direction are parallel;
    3. The current sensor according to claim 1, wherein the direction of the second magnetic field is orthogonal to the second magnetosensitive direction. 4.
  6. 　被測定電流が流れる電流路と、
    前記電流路に流れる電流によって発生する誘導磁界の磁気を検出する電流センサであって、
    　前記電流路を囲むとともに、空隙が設けられた磁性体コアと、
    前記磁性体コアの前記空隙内に設けられた第１の磁電変換素子と、
    前記磁性体コアの前記空隙内に設けられた第２の磁電変換素子と、
    前記第１の磁電変換素子と前記第２の磁電変換素子との出力の差分を演算する演算装置と、を備え、
    　前記第１の磁電変換素子に加わる前記誘導磁界である磁界の向きと前記第１の磁電変換素子が検出する第１感磁方向とがなす角と、前記第２の磁電変換素子に加わる前記誘導磁界である磁界の向きと前記第２の磁電変換素子が検出する第２感磁方向とがなす角と、が異なり、
    　前記電流路と前記第１の磁電変換素子との間の総合の静電容量と、前記電流路と前記第２の磁電変換素子との間の総合の静電容量とが等しいことを特徴とする電流センサ。     A current path through which the current to be measured flows;
    A current sensor for detecting magnetism of an induced magnetic field generated by a current flowing in the current path,
    A magnetic core that surrounds the current path and is provided with a gap;
    A first magnetoelectric transducer provided in the gap of the magnetic core;
    A second magnetoelectric conversion element provided in the gap of the magnetic core;
    An arithmetic device that calculates a difference in output between the first magnetoelectric conversion element and the second magnetoelectric conversion element,
    The angle formed by the direction of the magnetic field, which is the induction magnetic field applied to the first magnetoelectric conversion element, and the first magnetosensitive direction detected by the first magnetoelectric conversion element, and the induction applied to the second magnetoelectric conversion element The angle formed by the direction of the magnetic field that is a magnetic field and the second magnetosensitive direction detected by the second magnetoelectric transducer is different,
    A total capacitance between the current path and the first magnetoelectric conversion element is equal to a total capacitance between the current path and the second magnetoelectric conversion element. Current sensor.
  7. 　前記第１の磁電変換素子及び前記第２の磁電変換素子は、前記磁性体コアの厚み方向に配設されるとともに、前記電流路に対して等距離になるように並べて配設されることを特徴とする請求項６に記載の電流センサ。 The first magnetoelectric conversion element and the second magnetoelectric conversion element are arranged in the thickness direction of the magnetic core and arranged side by side so as to be equidistant from the current path. The current sensor according to claim 6.
  8. 　前記磁界の向きと前記第１感磁方向とが平行であり、
    　前記磁界の向きと前記第２感磁方向とが平行であることを特徴とする請求項６または請求項７に記載の電流センサ。     The direction of the magnetic field and the first magnetosensitive direction are parallel,
    The current sensor according to claim 6 or 7, wherein a direction of the magnetic field and the second magnetic sensing direction are parallel.
  9. 　前記電流路と前記第１の磁電変換素子との距離及び対向面積と、前記電流路と前記第２の磁電変換素子との距離及び対向面積と、が等しいとともに、
    　前記磁性体コアと前記第１の磁電変換素子との距離及び対向面積と、前記磁性体コアと前記第２の磁電変換素子との距離及び対向面積と、が等しいことを特徴とする請求項１ないし請求項８のいずれかに記載の電流センサ。     The distance and the facing area between the current path and the first magnetoelectric transducer and the distance and the facing area between the current path and the second magnetoelectric transducer are equal,
    The distance and the facing area between the magnetic core and the first magnetoelectric conversion element are equal to the distance and the facing area between the magnetic core and the second magnetoelectric conversion element. The current sensor according to claim 8.
PCT/JP2013/059094 2012-04-27 2013-03-27 Current sensor WO2013161496A1 (en)

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