WO2013159689A1 - Method for preparing cadmium telluride - Google Patents

Method for preparing cadmium telluride Download PDF

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Publication number
WO2013159689A1
WO2013159689A1 PCT/CN2013/074533 CN2013074533W WO2013159689A1 WO 2013159689 A1 WO2013159689 A1 WO 2013159689A1 CN 2013074533 W CN2013074533 W CN 2013074533W WO 2013159689 A1 WO2013159689 A1 WO 2013159689A1
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cadmium
quartz tube
tube
cadmium telluride
preparing
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PCT/CN2013/074533
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French (fr)
Chinese (zh)
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朱刘
胡智向
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广东先导稀材股份有限公司
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Publication of WO2013159689A1 publication Critical patent/WO2013159689A1/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals

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  • the present invention relates to a method for preparing a synthetic material, and more particularly to a method for preparing cadmium telluride. Background technique
  • Cadmium telluride is widely used in spectroscopic analysis, solar cells, infrared modulators, infrared window electroluminescent devices, photovoltaic cells, infrared detection, X-ray detection, nuclear radiation detectors, and light-emitting devices close to the visible region.
  • an object of the present invention is to provide a process for preparing cadmium telluride which is capable of uniform heating temperature, sufficient reaction, and is friendly to the operator and the environment when cadmium telluride is synthesized.
  • the present invention provides a method for preparing cadmium telluride, comprising the steps of: mixing cadmium and lanthanum in a prescribed molar ratio, wherein ruthenium is excessive relative to cadmium; and mixing a mixture of cadmium and ruthenium Put into the graphite tube; put the graphite tube into the quartz tube; put the quartz tube into the sealing tube furnace, vacuum the quartz tube and seal the tube; install the sealed quartz tube into the vertical gradient solidification furnace, adopt Multi-stage heating method to heat and keep heat, so that cadmium and antimony can be synthesized. After; and then, the quartz tube is cooled to room temperature with the furnace, the quartz tube is opened, and the cadmium telluride obtained by the synthesis reaction is taken out from the graphite cylinder.
  • the preparation method of cadmium telluride provided by the invention adopts a graphite tube and a quartz tube vacuum sealing tube, which can make the heating temperature of the cadmium telluride synthesis uniform, the reaction is sufficient, and is friendly to the operator and the environment.
  • the method for preparing cadmium telluride according to the present invention comprises the steps of: mixing cadmium and lanthanum in a prescribed molar ratio, wherein ruthenium is excessive relative to cadmium; loading a mixture of mixed cadmium and ruthenium into a graphite cylinder; Into the quartz tube; put the quartz tube into the tube sealing furnace, vacuum the quartz tube and seal the tube; install the sealed quartz tube into the vertical gradient solidification (Verdical Gradient Freezing, abbreviated as VGF) furnace
  • VGF Vertical Gradient Freezing
  • the cadmium is 5N cadmium
  • the ruthenium is 5N ruthenium.
  • the cadmium is in the form of a pellet and the crucible is a massive body.
  • the predetermined molar ratio is 1: (1. 05 ⁇ 1. 1).
  • the vacuum degree at which the quartz tube is evacuated is (1. 0 to 4.0) X 10 - 3 Pa.
  • the multi-stage heating mode heating and holding program is the highest temperature rise to 1050 ⁇ 1100 °C for 1 ⁇ 3h, and the program ends.
  • the heating and holding of the multi-stage heating mode is: 20 ⁇ 40min, rising from room temperature to 250 ⁇ 300 °C, Bao Temperature 10 ⁇ 30min; After that, 30 ⁇ 60min rise to 450 ⁇ 550°C, keep warm for 5 ⁇ 7h; then, 30 ⁇ 60min rise to 650 ⁇ 750°C, keep warm for 7 ⁇ 9h; and then, 3 ⁇ 5h rise to 1050 ⁇ 1100 ° C, insulation l ⁇ 3h.
  • the graphite cylinder is made of high-purity pure graphite, and is dried by high-temperature quenching before use, and then placed in a high-pressure furnace to be vacuum-fired. To remove volatiles contained in the graphite.
  • the graphite cylinder used is made of high-purity graphite, and is dried by high-temperature quenching before use, and then placed in a high-pressure furnace to be vacuum-fired. To remove volatiles contained in the graphite.
  • 5N cadmium ingot and 5N bismuth block were weighed in a molar ratio of 1:1.05 to a total of 500g into a graphite tube, the graphite tube was placed in a quartz tube, and the tube was taken in a sealed tube to evacuate the tube, and the vacuum was obtained.
  • the degree of vacuum is 4.0X10 - 3 Pa.
  • the heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1050 ° C, and the temperature is kept at 1050 ° C for 3 h. Specifically, it is raised from room temperature to 300 ° C in 25 min, and kept at 300 ° C for 10 min. After that, it is raised to 500 ° C in 25 min and kept at 500 ° C for 6 h. After that, it is raised to 700 ° C in 30 min and kept at 700 ° C for 8 h. After that, it was raised to 1050 °C in 4h and kept at 1050 °C for 3h.
  • the furnace was cooled to room temperature, the quartz tube was opened, and 490 g of 5N cadmium telluride material obtained by the synthesis reaction was taken out from the graphite cylinder.
  • the 5N cadmium ingot and the 5N bismuth block were weighed into a graphite tube at a molar ratio of 1:1.07, and then placed in a graphite tube.
  • the graphite tube was placed in a quartz tube, and the tube was taken in a sealed tube to evacuate the tube. The degree of vacuum is obtained 2.3X10- 3 Pa.
  • the heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1085 ° C, and the temperature is kept at 1085 ° C for 2 h. Specifically, it is raised from room temperature to 280 ° C for 30 min, and incubated at 280 ° C for 20 min; after that, it is raised to 480 ° C for 30 min and 6.5 h at 480 ° C; then, it is raised to 720 ° C for 45 min, at 720 ° C for 45 min. After 9 h of heat preservation, after 4.5 h, it was raised to 1085 ° C, and kept at 1085 ° C for 2 h.
  • the furnace was cooled to room temperature, the quartz tube was opened, and 975 g of 5N cadmium telluride obtained by the synthesis reaction was taken out from the graphite cylinder.
  • the 5N cadmium ingot and the 5N bismuth block were weighed into a graphite tube at a molar ratio of 1:1.1.
  • the graphite tube was placed in a quartz tube, and the vacuum tube was taken in a sealed tube furnace, and the vacuum obtained by vacuuming was obtained.
  • the degree is 1.0X10 - 3 Pa.
  • the heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1100 ° C, and the temperature is maintained at 1100 ° C for 1 h. Specifically, 40min is raised from room temperature to 250 ° C, and kept at 250 ° C for 30 min; then, 40 min is raised to 520 ° C, and 520 ° C is kept for 7 h; then, 60 min is raised to 680 ° C, and 680 ° C is kept. 7h; After that, it rises to 1100°C in 3h, and keeps lho at 1100°C
  • the furnace was cooled to room temperature, the quartz tube was opened, and 1438 g of 5N cadmium telluride obtained by the synthesis reaction was taken out from the graphite cylinder.
  • the detection was carried out by inductively coupled plasma mass spectrometry (ICP-MS) (manufactured by PE, model: DRC-II) to detect inorganic impurities.
  • ICP-MS inductively coupled plasma mass spectrometry
  • the detection conditions of the device are: temperature is 18 ° C ⁇ 28 ° C, relative humidity is 30 ⁇ 70%, cleanliness is 1000.
  • Detection principle Inductively coupled plasma mass spectrometry detection method: to be tested After the element is ionized by the plasma at high temperature, it enters the mass analyzer in the form of a positive charge, and is received by the detector according to the difference in mass/charge ratio to generate a signal. The signal generated by the element to be tested and the reference material of the standard substance are worth the content of the element to be tested.
  • Example 1-3 A high yield of cadmium telluride can be achieved from the weight of the raw material and the weight of cadmium telluride obtained.
  • the method for preparing cadmium telluride provided by the invention adopts a graphite tube and a quartz tube vacuum sealing tube, which can make the heating temperature of the cadmium telluride synthesis uniform, the reaction is sufficient, and is friendly to the operator and the environment.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention provides a method for preparing cadmium telluride, comprising steps of: mixing cadmium and tellurium according to a specified mole ratio, telluride being excess relative to cadmium; putting the mixture of cadmium and tellurium into a graphite barrel; putting the graphite barrel into a quartz tube; putting the quartz tube into a bomb furnace, and vacuumizing and sealing the quartz tube; putting the sealed quartz tube into a vertical gradient solidification furnace, and performing heating and heat preservation in a multistage manner, so that cadmium and tellurium are subjected to a synthetic reaction; and after the quartz tube cools to the room temperature along with the furnace, opening the quartz tube, and taking cadmium tellurium obtained from the reaction out of the quartz tube. In the method for preparing cadmium telluride provided in the present invention, the graphite barrel and the quartz tube are vacuumized and sealed, so that the heating temperature is uniform when cadmium tellurium is synthesized, and the reaction is fully performed. The method is friendly to operating personnel and the environment.

Description

碲化镉的制备方法  Preparation method of cadmium telluride
技术领域 Technical field
本发明涉及一种合成材料的制备方法, 尤其涉及一种碲化镉的制备方 法。 背景技术  The present invention relates to a method for preparing a synthetic material, and more particularly to a method for preparing cadmium telluride. Background technique
碲化镉广泛地应用于光谱分析、 太阳能电池、 红外调制器、 红外窗场致 发光器件、 光电池、 红外探测、 X射线探测、 核放射性探测器、 接近可见光 区的发光器件等。  Cadmium telluride is widely used in spectroscopic analysis, solar cells, infrared modulators, infrared window electroluminescent devices, photovoltaic cells, infrared detection, X-ray detection, nuclear radiation detectors, and light-emitting devices close to the visible region.
当前碲化镉的制备存在有多种方法。 其中一种方法是将热棒插入碲和镉 的混合粉末中, 加热到 500 °C而生成。 该方法需要较高的温度, 热棒加热不 够均匀,反应不够充分。还有一种方法是采用独立两个坩埚分别蒸发碲和镉, 然后在加热的衬底基片上反应生成的碲化镉薄膜, 这种方法属于薄膜制备方 法, 其直接利用碲和镉的单体粉末。 在该方法的制备过程中, 一方面难于准 确控制碲和镉的蒸发量, 另一方面, 在大量制备碲化镉薄膜过程中, 工作人 员可能接触镉粉的机会较多, 这可能对工作人员和环境造成污染和损害。 发明内容  There are various methods for preparing cadmium telluride. One of the methods is to insert a hot rod into a mixed powder of cerium and cadmium and heat it to 500 °C to form. This method requires a higher temperature, the heating of the hot rod is not uniform enough, and the reaction is insufficient. Another method is to separate ruthenium and cadmium by using two separate ruthenium, and then react the formed cadmium telluride film on a heated substrate substrate. This method belongs to a film preparation method, which directly utilizes bismuth and cadmium monomer powder. . In the preparation process of the method, on the one hand, it is difficult to accurately control the evaporation of lanthanum and cadmium. On the other hand, in the process of preparing a large amount of cadmium telluride film, the worker may have more chances of contacting cadmium powder, which may be for the staff. And the environment causes pollution and damage. Summary of the invention
针对背景技术中存在的不足, 本发明的目的在于提供一种碲化镉的 制备方法, 其能使碲化镉合成时的加热温度均匀、 反应充分且对操作人 员和环境友好。  In view of the deficiencies in the prior art, an object of the present invention is to provide a process for preparing cadmium telluride which is capable of uniform heating temperature, sufficient reaction, and is friendly to the operator and the environment when cadmium telluride is synthesized.
为了实现本发明的目的, 本发明提供一种碲化镉的制备方法, 包括 步骤: 将镉和碲按规定摩尔比进行混合, 其中碲相对于镉过量; 将混合 好的镉和碲的混合物装入到石墨筒中; 将石墨筒放入石英管中; 将石英 管放入到封管炉中, 将石英管抽真空并封管; 将封管后的石英管装进垂 直梯度凝固炉中, 采用多段升温方式加热保温, 以使镉和碲进行合成反 应; 以及之后, 使得石英管随炉冷却至室温, 打开石英管, 从石墨筒中 取出合成反应获得的碲化镉。 In order to achieve the object of the present invention, the present invention provides a method for preparing cadmium telluride, comprising the steps of: mixing cadmium and lanthanum in a prescribed molar ratio, wherein ruthenium is excessive relative to cadmium; and mixing a mixture of cadmium and ruthenium Put into the graphite tube; put the graphite tube into the quartz tube; put the quartz tube into the sealing tube furnace, vacuum the quartz tube and seal the tube; install the sealed quartz tube into the vertical gradient solidification furnace, adopt Multi-stage heating method to heat and keep heat, so that cadmium and antimony can be synthesized. After; and then, the quartz tube is cooled to room temperature with the furnace, the quartz tube is opened, and the cadmium telluride obtained by the synthesis reaction is taken out from the graphite cylinder.
本发明的有益效果如下。  The beneficial effects of the present invention are as follows.
本发明提供的碲化镉的制备方法, 由于采用了石墨筒以及石英管抽 真空封管, 其能使碲化镉合成时的加热温度均匀、 反应充分且对操作人 员和环境友好。 具体实肺式  The preparation method of cadmium telluride provided by the invention adopts a graphite tube and a quartz tube vacuum sealing tube, which can make the heating temperature of the cadmium telluride synthesis uniform, the reaction is sufficient, and is friendly to the operator and the environment. Specific lung
首先说明根据本发明的碲化镉的制备方法。  First, a method of preparing cadmium telluride according to the present invention will be described.
根据本发明的碲化镉的制备方法包括步骤: 将镉和碲按规定摩尔比 进行混合, 其中碲相对于镉过量; 将混合好的镉和碲的混合物装入到石 墨筒中; 将石墨筒放入石英管中; 将石英管放入到封管炉中, 将石英管 抽真空并封管;将封管后的石英管装进垂直梯度凝固(Vert ical Gradient Freez ing , 縮写为 VGF )炉中, 采用多段升温方式加热保温, 以使镉和碲 进行合成反应; 以及之后, 使得石英管随炉冷却至室温, 打开石英管, 从石墨筒中取出合成反应获得的碲化镉。  The method for preparing cadmium telluride according to the present invention comprises the steps of: mixing cadmium and lanthanum in a prescribed molar ratio, wherein ruthenium is excessive relative to cadmium; loading a mixture of mixed cadmium and ruthenium into a graphite cylinder; Into the quartz tube; put the quartz tube into the tube sealing furnace, vacuum the quartz tube and seal the tube; install the sealed quartz tube into the vertical gradient solidification (Verdical Gradient Freezing, abbreviated as VGF) furnace The multi-stage heating method is used to heat and heat the cadmium and antimony to synthesize the reaction; and then, the quartz tube is cooled to room temperature with the furnace, the quartz tube is opened, and the cadmium telluride obtained by the synthesis reaction is taken out from the graphite tube.
在根据本发明所述的碲化镉的制备方法中, 所述镉为 5N镉, 所述碲 为 5N 碲。 优选地, 镉为锭状, 碲为块状体。 在根据本发明所述的碲化镉的制备方法中, 所述规定摩尔比为 1 : ( 1. 05〜1. 1)。 在根据本发明所述的碲化镉的制备方法中, 所述将石英管抽真空达 到的真空度为 ( 1. 0〜4. 0 ) X 10— 3Pa。 在根据本发明所述的碲化镉的制备方法中, 所述多段升温方式加热 保温程序为最高温升至 1050〜1100 °C保温 l〜3h 后程序结束。 优选地, 所述多段升温方式加热保温为: 20〜40min 从室温升至 250〜300 °C, 保 温 10〜30min; 之后, 30〜60min 升至 450〜550°C, 保温 5〜7h; 之后, 30〜60min升至 650〜750°C, 保温 7〜9h; 以及之后, 3〜5h升至 1050〜 1100°C, 保温 l〜3h。 In the method for producing cadmium telluride according to the present invention, the cadmium is 5N cadmium, and the ruthenium is 5N ruthenium. Preferably, the cadmium is in the form of a pellet and the crucible is a massive body. In the method for producing cadmium telluride according to the present invention, the predetermined molar ratio is 1: (1. 05~1. 1). In the method for preparing cadmium telluride according to the present invention, the vacuum degree at which the quartz tube is evacuated is (1. 0 to 4.0) X 10 - 3 Pa. In the method for preparing cadmium telluride according to the present invention, the multi-stage heating mode heating and holding program is the highest temperature rise to 1050~1100 °C for 1~3h, and the program ends. Preferably, the heating and holding of the multi-stage heating mode is: 20~40min, rising from room temperature to 250~300 °C, Bao Temperature 10~30min; After that, 30~60min rise to 450~550°C, keep warm for 5~7h; then, 30~60min rise to 650~750°C, keep warm for 7~9h; and then, 3~5h rise to 1050 ~ 1100 ° C, insulation l ~ 3h.
在根据本发明所述的碲化镉的制备方法中, 优选地, 所述石墨筒由 高 30纯石墨制成, 且在使用前高温淬水烘干, 再放入高压炉中抽真空空 烧, 以除去石墨中所含挥发物。  In the method for preparing cadmium telluride according to the present invention, preferably, the graphite cylinder is made of high-purity pure graphite, and is dried by high-temperature quenching before use, and then placed in a high-pressure furnace to be vacuum-fired. To remove volatiles contained in the graphite.
其次说明根据本发明的碲化镉的制备方法的实施例。  Next, an embodiment of a method for producing cadmium telluride according to the present invention will be described.
在根据本发明的碲化镉的制备方法的以下实施例中, 所采用的石墨 筒由高纯石墨制成, 且在使用前高温淬水烘干, 再放入高压炉中抽真空 空烧, 以除去石墨中所含挥发物。  In the following embodiment of the method for preparing cadmium telluride according to the present invention, the graphite cylinder used is made of high-purity graphite, and is dried by high-temperature quenching before use, and then placed in a high-pressure furnace to be vacuum-fired. To remove volatiles contained in the graphite.
实施例 1  Example 1
将 5N 镉锭和 5N 碲块按 1:1.05 的摩尔比例称取物料共 500g 装入 石墨筒中, 把石墨筒放入石英管中, 拿到封管炉里抽真空封管, 其中抽 真空获得的真空度为 4.0X10— 3Pa。 5N cadmium ingot and 5N bismuth block were weighed in a molar ratio of 1:1.05 to a total of 500g into a graphite tube, the graphite tube was placed in a quartz tube, and the tube was taken in a sealed tube to evacuate the tube, and the vacuum was obtained. The degree of vacuum is 4.0X10 - 3 Pa.
把封好的石英管装进 VGF 炉里, 升温加热。 升温加热程序为分段加 热保温, 最高温升至 1050°C, 在 1050°C下保温 3h。 具体为, 25min 从 室温升至 300°C, 300°C下保温 lOmin; 之后, 25min 升至 500°C, 500 °C 下保温 6h; 之后, 30min升至 700°C, 700°C保温 8h; 之后, 4h升至 1050 °C, 1050°C下保温 3h。  Put the sealed quartz tube into the VGF furnace and heat it up. The heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1050 ° C, and the temperature is kept at 1050 ° C for 3 h. Specifically, it is raised from room temperature to 300 ° C in 25 min, and kept at 300 ° C for 10 min. After that, it is raised to 500 ° C in 25 min and kept at 500 ° C for 6 h. After that, it is raised to 700 ° C in 30 min and kept at 700 ° C for 8 h. After that, it was raised to 1050 °C in 4h and kept at 1050 °C for 3h.
升温加热程序执行完毕以后, 随炉冷却至室温, 打开石英管, 从石 墨筒中取出合成反应获得的 5N 碲化镉物料 490g。  After the heating and heating program was completed, the furnace was cooled to room temperature, the quartz tube was opened, and 490 g of 5N cadmium telluride material obtained by the synthesis reaction was taken out from the graphite cylinder.
实施例 2  Example 2
将 5N镉锭和 5N碲块按 1:1.07 的摩尔比称取物料 1000g 后装入石 墨筒中, 把石墨筒放入石英管中, 拿到封管炉里抽真空封管, 其中抽真 空获得的真空度为 2.3X10— 3Pa。 The 5N cadmium ingot and the 5N bismuth block were weighed into a graphite tube at a molar ratio of 1:1.07, and then placed in a graphite tube. The graphite tube was placed in a quartz tube, and the tube was taken in a sealed tube to evacuate the tube. The degree of vacuum is obtained 2.3X10- 3 Pa.
把封好的石英管装进 VGF 炉里, 升温加热。 升温加热程序为分段加 热保温, 最高温升至 1085°C, 在 1085°C下保温 2h。 具体为, 30min 从 室 温升至 280°C, 280°C下保温 20min; 之后, 30min 升至 480°C, 480 °C下保温 6.5h; 之后, 45min升至 720°C, 720°C下保温 9h; 之后, 4.5h 升至 1085°C, 1085°C下保温 2h。  Put the sealed quartz tube into the VGF furnace and heat it up. The heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1085 ° C, and the temperature is kept at 1085 ° C for 2 h. Specifically, it is raised from room temperature to 280 ° C for 30 min, and incubated at 280 ° C for 20 min; after that, it is raised to 480 ° C for 30 min and 6.5 h at 480 ° C; then, it is raised to 720 ° C for 45 min, at 720 ° C for 45 min. After 9 h of heat preservation, after 4.5 h, it was raised to 1085 ° C, and kept at 1085 ° C for 2 h.
升温加热程序执行完毕以后, 随炉冷却至室温, 打开石英管, 从石 墨筒中取出合成反应获得的 5N 碲化镉 975g。  After the heating and heating program was completed, the furnace was cooled to room temperature, the quartz tube was opened, and 975 g of 5N cadmium telluride obtained by the synthesis reaction was taken out from the graphite cylinder.
实施例 3  Example 3
将 5N 镉锭和 5N 碲块按 1:1.1 的摩尔比例称取物料 1500g 装入石 墨筒中, 把石墨筒放入石英管中, 拿到封管炉里抽真空封管, 其中抽真 空获得的真空度为 1.0X10— 3Pa。 The 5N cadmium ingot and the 5N bismuth block were weighed into a graphite tube at a molar ratio of 1:1.1. The graphite tube was placed in a quartz tube, and the vacuum tube was taken in a sealed tube furnace, and the vacuum obtained by vacuuming was obtained. The degree is 1.0X10 - 3 Pa.
把封好的石英管装进 VGF 炉里, 升温加热。 升温加热程序为分段加 热保温, 最高温升至 1100°C, 在 1100°C下保温 lh。 具体为, 40min 从 室温升至 250°C, 250°C下保温 30min; 之后, 40min 升至 520°C, 520 °C 下保温 7h; 之后, 60min 升至 680°C, 680°C下保温 7h; 之后, 3h 升至 1100°C, 1100°C下保温 lho  Put the sealed quartz tube into the VGF furnace and heat it up. The heating and heating process is a stepwise heating and insulation, the highest temperature rises to 1100 ° C, and the temperature is maintained at 1100 ° C for 1 h. Specifically, 40min is raised from room temperature to 250 ° C, and kept at 250 ° C for 30 min; then, 40 min is raised to 520 ° C, and 520 ° C is kept for 7 h; then, 60 min is raised to 680 ° C, and 680 ° C is kept. 7h; After that, it rises to 1100°C in 3h, and keeps lho at 1100°C
升温加热程序执行完毕以后, 随炉冷却至室温, 打开石英管, 从石 墨筒中取出合成反应获得的 5N 碲化镉 1438g。  After the heating and heating program was completed, the furnace was cooled to room temperature, the quartz tube was opened, and 1438 g of 5N cadmium telluride obtained by the synthesis reaction was taken out from the graphite cylinder.
最后给出实施例 1-3 的检测结果。  Finally, the test results of Examples 1-3 are given.
检测采用电感耦合等离子体质谱仪(ICP-MS) (生产厂家为 PE公司, 型号为: DRC-II) 检测无机杂质含量。  The detection was carried out by inductively coupled plasma mass spectrometry (ICP-MS) (manufactured by PE, model: DRC-II) to detect inorganic impurities.
该设备的检测条件为: 温度为 18°C〜28°C, 相对湿度为 30〜70%, 洁净度为 1000级。 检测原理: 电感耦合等离子体质谱仪检测方式: 待测 元素经过等离子体高温电离后, 以正电荷形式进入质量分析器, 根据质 量 /电荷比的差异, 被检测器接收, 产生信号。 待测元素产生的信号和标 准物质该元素信号比值得出待测元素的含量。 The detection conditions of the device are: temperature is 18 ° C ~ 28 ° C, relative humidity is 30 ~ 70%, cleanliness is 1000. Detection principle: Inductively coupled plasma mass spectrometry detection method: to be tested After the element is ionized by the plasma at high temperature, it enters the mass analyzer in the form of a positive charge, and is received by the detector according to the difference in mass/charge ratio to generate a signal. The signal generated by the element to be tested and the reference material of the standard substance are worth the content of the element to be tested.
表 1 实施例 1-3 的检测结果 (单位: ppm)  Table 1 Test results of Examples 1-3 (Unit: ppm)
Figure imgf000006_0001
实施例 1-3 由原料重量和获得的碲化镉的重量看, 可以实现高产率的碲 化镉。 此外, 本发明提供的碲化镉的制备方法, 由于采用了石墨筒以及石 英管抽真空封管, 其能使碲化镉合成时的加热温度均匀、 反应充分且对 操作人员和环境友好。
Figure imgf000006_0001
Example 1-3 A high yield of cadmium telluride can be achieved from the weight of the raw material and the weight of cadmium telluride obtained. In addition, the method for preparing cadmium telluride provided by the invention adopts a graphite tube and a quartz tube vacuum sealing tube, which can make the heating temperature of the cadmium telluride synthesis uniform, the reaction is sufficient, and is friendly to the operator and the environment.

Claims

权 利 要 求 书 Claim
1. 一种碲化镉的制备方法, 包括步骤:  1. A method for preparing cadmium telluride, comprising the steps of:
将镉和碲按规定摩尔比进行混合, 其中碲相对于镉过量;  Mixing cadmium and tellurium in a prescribed molar ratio, wherein ruthenium is excessive relative to cadmium;
将混合好的镉和碲的混合物装入到石墨筒中;  Loading a mixture of mixed cadmium and cerium into a graphite cylinder;
将石墨筒放入石英管中;  Put the graphite tube into the quartz tube;
将石英管放入到封管炉中, 将石英管抽真空并封管;  Put the quartz tube into the tube sealing furnace, vacuum the quartz tube and seal the tube;
将封管后的石英管装进垂直梯度凝固炉中, 采用多段升温方式加热 保温, 以使镉和碲进行合成反应; 以及  The sealed quartz tube is placed in a vertical gradient solidification furnace, and heated by a multi-stage heating method to synthesize cadmium and strontium;
之后, 使得石英管随炉冷却至室温, 打开石英管, 从石墨筒中取出 合成反应获得的碲化镉。  Thereafter, the quartz tube was cooled to room temperature with the furnace, the quartz tube was opened, and the cadmium telluride obtained by the synthesis reaction was taken out from the graphite cylinder.
2. 根据权利要求 1所述的碲化镉的制备方法, 其特征在于, 所述镉 为 5N 镉, 所述碲为 5N 碲。  The method for producing cadmium telluride according to claim 1, wherein the cadmium is 5N cadmium, and the lanthanum is 5N lanthanum.
3. 根据权利要求 1所述的碲化镉的制备方法, 其特征在于, 所述规 定摩尔比为 1 : (1. 05〜1. 1)。  The method of preparing the cadmium telluride according to claim 1, wherein the predetermined molar ratio is 1: (1. 05~1. 1).
4. 根据权利要求 1所述的碲化镉的制备方法, 其特征在于, 所述将 石英管抽真空达到的真空度为 (1. 0〜4. 0 ) X 10— 3Pa。 The method of preparing the cadmium telluride according to claim 1, wherein the vacuum degree obtained by evacuating the quartz tube is (1. 0~4. 0) X 10 - 3 Pa.
5. 根据权利要求 1所述的碲化镉的制备方法, 其特征在于, 所述多 段升温方式加热保温为最高温升至 1050〜1100°C, 保温 l〜3h后程序结 束。  The method for preparing cadmium telluride according to claim 1, wherein the heating and holding of the multi-stage heating method is performed at a maximum temperature of 1050 to 1100 ° C, and the program is terminated after 1 to 3 hours of heat preservation.
6. 根据权利要求 5所述的碲化镉的制备方法, 其特征在于, 所述多 段升温方式加热保温为:  The method for preparing cadmium telluride according to claim 5, wherein the heating and holding of the multi-stage heating method is:
20〜40min 从室温升至 250〜300°C, 保温 10〜30min;  20~40min from room temperature to 250~300 °C, keep warm 10~30min;
之后, 30〜60min 升至 450〜550°C, 保温 5〜7h;  After that, 30~60min rose to 450~550°C, and kept warm for 5~7h;
之后, 30〜60min 升至 650〜750°C, 保温 7〜9h; 以及  After that, 30~60min is raised to 650~750°C, and the temperature is kept 7~9h;
25 之后, 3〜5h 升至 1050〜1100°C, 保温 l〜3h。  After 25, 3~5h rise to 1050~1100°C, keep warm l~3h.
7. 根据权利要求 1所述的碲化镉的制备方法, 其特征在于, 石墨筒 由高纯石墨制成, 且在使用前高温淬水烘干, 再放入高压炉中抽真空空 烧。  The method for preparing cadmium telluride according to claim 1, wherein the graphite tube is made of high-purity graphite, and is dried by high-temperature quenching before use, and then placed in a high-pressure furnace to be evacuated.
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