CN1380246A - Preparation method of cadmium antimonide powder - Google Patents
Preparation method of cadmium antimonide powder Download PDFInfo
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- CN1380246A CN1380246A CN 02114571 CN02114571A CN1380246A CN 1380246 A CN1380246 A CN 1380246A CN 02114571 CN02114571 CN 02114571 CN 02114571 A CN02114571 A CN 02114571A CN 1380246 A CN1380246 A CN 1380246A
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Abstract
The preparation method of cadmium telluride powder includes the following steps: firstly, mixing tellurium powder and cadmium powder according to chemical mixing ratio, grinding and stirring mixed material, placing the mixed material in the crucible under the condition of vacuum, heating to make the tellurium powder and cadmium powder produce chemical combination reaction to form cadmium telluride material, further grinding the obtained cadmium telluride material and mixing it further, and placing the cadmium telluride material in heating furnace to make annealing treatment so as to obtain the invented product.
Description
One, technical field
The invention belongs to photoelectric material preparation technology field, particularly a kind of preparation method of cadmium antimonide powder.
Two, background technology
New through looking into, only Japanese Patent relates to content of the present invention at present, and its concrete grammar is that hot pin is inserted in the mixed powder of tellurium and cadmium, is heated to 500 ℃ and generate.This method needs higher temperature, and the hot pin heating is even inadequately, reacts abundant inadequately.Other bibliographical informations are preparation methods of Cadimium telluride thin film, promptly adopt independent two crucibles to evaporate tellurium and cadmium respectively, reaction generates the CdTe film on the substrate base of heating then, this method is a kind of method of film preparation, it is a monomer powders of directly utilizing tellurium and cadmium, in making processes, be difficult to accurately control the steam output of tellurium and cadmium on the one hand, on the other hand, carry out in the device application at a large amount of preparation Cadimium telluride thin films, it is more that the staff contacts the chance of cadmium powder, and staff and environment are easily polluted and damage.Though same field is not a powdered preparation.
Three, summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of and can improve finished product purity, not the preparation method of the cadmium antimonide powder that can pollute and damage environment and operator.
The technical solution used in the present invention is in order to achieve the above object: at first cadmium powder and tellurium powder are pressed: 1: 1.14～1: 1.18 weight ratio is mixed; Mixed material is ground, stirs cadmium powder and tellurium powder are mixed; Mixed uniformly cadmium powder and tellurium powder are placed crucible under the vacuum condition, crucible is heated to 125 ℃-160 ℃, make cadmium powder and tellurium powder in the crucible carry out combination reaction, form the cadmium telluride material; The cadmium telluride material that generates is ground once more, mix; Place process furnace to carry out anneal through the cadmium telluride material after grinding, temperature is controlled between 450-500 ℃, and annealing time is 1-1.5 hour.
Another characteristics of the present invention are: the outside of crucible is wound with resistive heater; The vacuum crucible is that the vacuum chamber with crucible is extracted into 1 * 10
-1-1 * 10
-2The vacuum of handkerchief.
The present invention not only can directly use CdTe powdered preparation film, and whole process of preparation is to react under vacuum condition, can improve the purity of finished product greatly, because vacuum unit expellant gas is through filtering and handling, can not become to pollute and infringement with operator to environment, in addition, the chemical reaction temperature that the present invention carried out requires lower.
Four, embodiment
Embodiment 1, and cadmium powder and tellurium powder are carried out mix by 1: 1.14 weight ratio, and grinds, stirs cadmium powder and tellurium powder are mixed; Place the mixture of cadmium powder after ground and mixed and tellurium powder the outside to be wound with the vacuum crucible of resistive heater; The vacuum of crucible vacuum chamber is extracted into 1 * 10
-2Handkerchief; At this moment, to the crucible heating, when Heating temperature was 160 ℃, chemical reaction can take place in cadmium powder and tellurium powder in the crucible, generated the CdTe material; The resultant of reaction CdTe of cadmium powder and tellurium powder is ground thorough mixing once more; To place vacuum annealing furnace to anneal through the CdTe material after grinding, annealing temperature be controlled at 450 ℃, and annealing time is 1 hour, can obtain the CdTe powder.
Embodiment 2, and cadmium powder and tellurium powder are carried out mix by 1: 1.15 weight ratio, and grind, stir cadmium powder and tellurium powder are mixed; Place the mixture of cadmium powder after ground and mixed and tellurium powder the outside to be wound with the vacuum crucible of resistive heater; The vacuum of crucible vacuum chamber is extracted into 1 * 10
-1Handkerchief; At this moment, to the crucible heating, when Heating temperature was 125 ℃, chemical reaction can take place in cadmium powder and tellurium powder in the crucible, generated the CdTe material; The resultant of reaction CdTe of cadmium powder and tellurium powder is ground thorough mixing once more; To place vacuum annealing furnace to anneal through the CdTe material after grinding, annealing temperature be controlled at 500 ℃, and annealing time is 1.2 hours, can obtain the CdTe powder.
Embodiment 3, and cadmium powder and tellurium powder are carried out mix by 1: 1.16 weight ratio, and grind, stir cadmium powder and tellurium powder are mixed; Place the mixture of cadmium powder after ground and mixed and tellurium powder the outside to be wound with the vacuum crucible of resistive heater; The vacuum of crucible vacuum chamber is extracted into 1 * 10
-2Handkerchief; At this moment, to the crucible heating, when Heating temperature was 132 ℃, chemical reaction can take place in cadmium powder and tellurium powder in the crucible, generated the CdTe material; The resultant of reaction CdTe of cadmium powder and tellurium powder is ground thorough mixing once more; To place vacuum annealing furnace to anneal through the CdTe material after grinding, annealing temperature be controlled at 470 ℃, and annealing time is 1.5 hours, can obtain the CdTe powder.
Embodiment 4, and cadmium powder and tellurium powder are carried out mix by 1: 1.18 weight ratio, and grind, stir cadmium powder and tellurium powder are mixed; Place the mixture of cadmium powder after ground and mixed and tellurium powder the outside to be wound with the vacuum crucible of resistive heater; The vacuum of crucible vacuum chamber is extracted into 1 * 10
-1Handkerchief; At this moment, to the crucible heating, when Heating temperature was 140 ℃, chemical reaction can take place in cadmium powder and tellurium powder in the crucible, generated the CdTe material; The resultant of reaction CdTe of cadmium powder and tellurium powder is ground thorough mixing once more; To place vacuum annealing furnace to anneal through the CdTe material after grinding, annealing temperature be controlled at 480 ℃, and annealing time is 1.4 hours, can obtain the CdTe powder.
Embodiment 5, and cadmium powder and tellurium powder are carried out mix by 1: 1.17 weight ratio, and grind, stir cadmium powder and tellurium powder are mixed; Place the mixture of cadmium powder after ground and mixed and tellurium powder the outside to be wound with the vacuum crucible of resistive heater; The vacuum of crucible vacuum chamber is extracted into 1 * 10
-2Handkerchief; At this moment, to the crucible heating, when Heating temperature was 158 ℃, chemical reaction can take place in cadmium powder and tellurium powder in the crucible, generated the CdTe material; The resultant of reaction CdTe of cadmium powder and tellurium powder is ground thorough mixing once more; To place vacuum annealing furnace to anneal through the CdTe material after grinding, annealing temperature be controlled at 460 ℃, and annealing time is 1.3 hours, can obtain the CdTe powder.
Claims (5)
1, the preparation method of cadmium antimonide powder is characterized in that:
1) at first cadmium powder and tellurium powder are mixed by 1: 1.14～1: 1.18 weight ratio;
2) mixed material ground, stir cadmium powder and tellurium powder are mixed;
3) mixed uniformly cadmium powder and tellurium powder are placed crucible under the vacuum condition, crucible is heated to 125 ℃-160 ℃, make cadmium powder and tellurium powder in the crucible carry out combination reaction, form the cadmium telluride material;
4) the cadmium telluride material that generates is ground once more, mix;
5) place process furnace to carry out anneal through the cadmium telluride material after grinding, temperature is controlled between 450-500 ℃, and annealing time is 1-1.5 hour.
2, the preparation method of cadmium antimonide powder according to claim 1 is characterized in that: the outside of said crucible is wound with resistive heater.
3, the preparation method of cadmium antimonide powder according to claim 1 is characterized in that: said vacuum crucible is that the vacuum chamber with crucible is extracted into 1 * 10
-1-1 * 10
-2The vacuum of handkerchief.
4, the preparation method of cadmium antimonide powder according to claim 1 is characterized in that: said cadmium powder and tellurium powder carry out blended by 1: 1.15～1: 1.17 weight ratio; The Heating temperature of crucible is 130 ℃-155 ℃; The temperature of carrying out anneal in process furnace is between 460-490 ℃, and annealing time is 1.1-1.4 hour.
5, the preparation method of cadmium antimonide powder according to claim 1 is characterized in that: said cadmium powder and tellurium powder carry out blended by 1: 1.14 weight ratio; The Heating temperature of crucible is 140 ℃; The temperature of carrying out anneal in process furnace is between 480 ℃, and annealing time is 1.2 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021145717A CN1171778C (en) | 2002-05-15 | 2002-05-15 | Preparation method of cadmium antimonide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021145717A CN1171778C (en) | 2002-05-15 | 2002-05-15 | Preparation method of cadmium antimonide powder |
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| Publication Number | Publication Date |
|---|---|
| CN1380246A true CN1380246A (en) | 2002-11-20 |
| CN1171778C CN1171778C (en) | 2004-10-20 |
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| CNB021145717A Expired - Fee Related CN1171778C (en) | 2002-05-15 | 2002-05-15 | Preparation method of cadmium antimonide powder |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1305998C (en) * | 2005-06-30 | 2007-03-21 | 复旦大学 | Water-soluble CdTe nano crystal polymer sulface modifying method |
| CN1965111B (en) * | 2004-04-06 | 2011-10-19 | 秦内蒂克有限公司 | Manufacture of cadmium mercury telluride |
| WO2013159689A1 (en) * | 2012-04-27 | 2013-10-31 | 广东先导稀材股份有限公司 | Method for preparing cadmium telluride |
| WO2013174251A1 (en) * | 2012-05-22 | 2013-11-28 | 广东先导稀材股份有限公司 | Method for preparing cadmium telluride |
| CN103420345A (en) * | 2012-05-22 | 2013-12-04 | 广东先导稀材股份有限公司 | Graphite crucible, heating furnace and preparation method for cadmium telluride |
| CN105060260A (en) * | 2015-08-27 | 2015-11-18 | 广东先导稀材股份有限公司 | Method for preparing tellurium tetraiodide |
| CN106495108A (en) * | 2016-11-08 | 2017-03-15 | 广东先导稀材股份有限公司 | The preparation method of cadmium telluride |
| CN110127633A (en) * | 2019-06-25 | 2019-08-16 | 先导薄膜材料（广东）有限公司 | A kind of cadmium telluride target and preparation method thereof |
| CN112194105A (en) * | 2020-10-13 | 2021-01-08 | 昆明理工大学 | Preparation method of cadmium telluride |
| CN114590837A (en) * | 2022-03-15 | 2022-06-07 | 先导薄膜材料（广东）有限公司 | Preparation method and application of high-purity cadmium antimonide |
-
2002
- 2002-05-15 CN CNB021145717A patent/CN1171778C/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1965111B (en) * | 2004-04-06 | 2011-10-19 | 秦内蒂克有限公司 | Manufacture of cadmium mercury telluride |
| CN1305998C (en) * | 2005-06-30 | 2007-03-21 | 复旦大学 | Water-soluble CdTe nano crystal polymer sulface modifying method |
| WO2013159689A1 (en) * | 2012-04-27 | 2013-10-31 | 广东先导稀材股份有限公司 | Method for preparing cadmium telluride |
| CN103420346B (en) * | 2012-05-22 | 2015-02-04 | 广东先导稀材股份有限公司 | Preparation method for cadmium telluride |
| CN103420345A (en) * | 2012-05-22 | 2013-12-04 | 广东先导稀材股份有限公司 | Graphite crucible, heating furnace and preparation method for cadmium telluride |
| CN103420346A (en) * | 2012-05-22 | 2013-12-04 | 广东先导稀材股份有限公司 | Preparation method for cadmium telluride |
| WO2013174251A1 (en) * | 2012-05-22 | 2013-11-28 | 广东先导稀材股份有限公司 | Method for preparing cadmium telluride |
| CN103420345B (en) * | 2012-05-22 | 2015-04-22 | 广东先导稀材股份有限公司 | Graphite crucible, heating furnace and preparation method for cadmium telluride |
| CN105060260A (en) * | 2015-08-27 | 2015-11-18 | 广东先导稀材股份有限公司 | Method for preparing tellurium tetraiodide |
| CN105060260B (en) * | 2015-08-27 | 2018-01-23 | 广东先导稀材股份有限公司 | A kind of preparation method of telluric iodide |
| CN106495108A (en) * | 2016-11-08 | 2017-03-15 | 广东先导稀材股份有限公司 | The preparation method of cadmium telluride |
| CN110127633A (en) * | 2019-06-25 | 2019-08-16 | 先导薄膜材料（广东）有限公司 | A kind of cadmium telluride target and preparation method thereof |
| CN112194105A (en) * | 2020-10-13 | 2021-01-08 | 昆明理工大学 | Preparation method of cadmium telluride |
| CN114590837A (en) * | 2022-03-15 | 2022-06-07 | 先导薄膜材料（广东）有限公司 | Preparation method and application of high-purity cadmium antimonide |
| CN114590837B (en) * | 2022-03-15 | 2023-09-01 | 先导薄膜材料（广东）有限公司 | Preparation method and application of high-purity cadmium antimonide |
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| Publication number | Publication date |
|---|---|
| CN1171778C (en) | 2004-10-20 |
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Granted publication date: 20041020 |