WO2013156539A1 - Ensemble dispositif intégré à semi-conducteur comprenant un transducteur acoustique mems - Google Patents

Ensemble dispositif intégré à semi-conducteur comprenant un transducteur acoustique mems Download PDF

Info

Publication number
WO2013156539A1
WO2013156539A1 PCT/EP2013/058029 EP2013058029W WO2013156539A1 WO 2013156539 A1 WO2013156539 A1 WO 2013156539A1 EP 2013058029 W EP2013058029 W EP 2013058029W WO 2013156539 A1 WO2013156539 A1 WO 2013156539A1
Authority
WO
WIPO (PCT)
Prior art keywords
die
package
internal space
acoustic transducer
membrane
Prior art date
Application number
PCT/EP2013/058029
Other languages
English (en)
Inventor
Sebastiano Conti
Luca Maggi
Original Assignee
Stmicroelectronics S.R.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stmicroelectronics S.R.L. filed Critical Stmicroelectronics S.R.L.
Publication of WO2013156539A1 publication Critical patent/WO2013156539A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to an assembly of a semiconductor integrated device including an acoustic transducer of a MEMS (Micro-Electro-Mechanical System) type.
  • MEMS Micro-Electro-Mechanical System
  • a MEMS acoustic transducer in particular a microphone generally comprises a microelectromechanical sensing structure, designed to transduce acoustic pressure waves into an electrical quantity (for example, a capacitive variation), and reading electronics, designed to carry out appropriate processing operations (amongst which amplification and filtering operations) on said electrical quantity so as to supply a electrical output signal (for example, a voltage) .
  • the microelectromechanical sensing structure generally comprises a mobile electrode, provided as a diaphragm or membrane, set facing a fixed electrode, to constitute the plates of a sensing capacitor with variable capacitance.
  • the mobile electrode is anchored by means of a first portion thereof, which is generally perimetral, to a structural layer, whilst a second portion thereof, which is generally central, is free to move or bend in response to the pressure exerted by the incident acoustic pressure waves.
  • the mobile electrode and the fixed electrode provide a capacitor, and bending of the membrane that constitutes the mobile electrode causes a variation of capacitance as a function of the acoustic signal to be detected.
  • Figures 1-3 show, respectively, a top plan view (in a horizontal plane xy) and cross-sectional views of the microelectromechanical sensing structure of a MEMS acoustic transducer, designated as a whole by 1, in a possible embodiment of a known type.
  • the microelectromechanical structure 1 comprises a membrane 2, which is mobile and made of conductive material, facing a rigid plate 3 (usually defined as "back plate” - this term is here intended to indicate a relatively rigid element as compared to the membrane, which is instead flexible) .
  • the rigid plate 3 is formed by a first plate layer 3a, which is made of conductive material and faces the membrane 2, and a second plate layer 3b, made of insulating material, set on top of the first plate layer 3a except for portions in which it extends through the first plate layer 3a to form protuberances that start from the rigid plate 3, as a prolongation of the latter towards the membrane 2, and have anti-sticking and stopper functions in regard to the movement of the membrane 2.
  • the membrane 2 which in use undergoes deformation as a function of the incident acoustic pressure waves, is at least partially suspended over a structural layer 5 and set directly facing a cavity 6, obtained by digging a rear portion 5b of the structural layer 5 (opposite to a front surface 5a of the same structural layer 5, set in the proximity of the membrane 2) .
  • the membrane 2 is anchored to the structural layer 5 by means of membrane anchorages 8, provided as protuberances of the membrane 2 extending from its peripheral regions towards the structural layer 5.
  • An insulation layer 9 made, for example, of silicon nitride (SiN), set on the structural layer 5 enables electrical insulation of the membrane anchorages 8 from the structural layer 5.
  • the membrane anchorages 8 also have the function of suspending the membrane 2 over the structural layer 5, at a certain distance therefrom.
  • the value of this distance is a function of a compromise between the linearity of response at low frequencies and the noise of the MEMS acoustic transducer.
  • through openings 10 are formed through the membrane 2, in particular in the proximity of each membrane anchorage 8; the through openings 10 enable "equalization" of the static pressure on the two faces of the membrane 2.
  • the rigid plate 3 is anchored to the structural layer 5 by means of plate anchorages 11 provided in a peripheral region thereof.
  • plate anchorages 11 are, for example, constituted by pillars made of the same material as the rigid plate 3, arranged above the structural layer 5 and electrically insulated from the structural layer 5 via the insulation layer 9.
  • the rigid plate 3 rests peripherally on superimposed portions of a first sacrificial layer 12a, of a second sacrificial layer 12b, and of a third sacrificial layer 12c, externally to the area occupied by the membrane 2 and by the plate anchorages 11.
  • the rigid plate 3 moreover has a plurality of holes 13, for example circular in shape, having the function of favouring, during the manufacturing steps, removal of the underlying sacrificial layers and, in use, of enabling ventilation or free circulation of air between the rigid plate 3 and the membrane 2 (rendering the rigid plate 3 in effect "acoustically transparent") .
  • the holes 13, which traverse the rigid plate 3 throughout its thickness have the function of enabling the acoustic pressure waves to reach and deform the membrane 2.
  • the microelectromechanical structure 1 further comprises a membrane electrical contact 14 and a rigid-plate electrical contact 15, both made of conductive material, used, during use of the MEMS microphone, for biasing the membrane 2 and the rigid plate 3 and collecting a capacitive variation signal resulting from deformation of the membrane 2 caused by the incident acoustic pressure waves.
  • the membrane electrical contact 14 is formed in part in the same layer in which the rigid plate 3 is provided, but is electrically separated therefrom, for example, by appropriate shaping of the rigid plate 3.
  • the membrane electrical contact 14 comprises a conductive plug 16 in direct electrical contact with the membrane 2, possibly a plug connection portion 17, which is conductive and is in electrical contact with the plug 16, and a membrane conductive path 18, for example, made of metal material, comprising a pad in electrical contact with the plug 16.
  • the rigid-plate electrical contact 15 in turn comprises a conductive path 19 in electrical contact with the rigid plate 3 by means of a respective pad accessible from outside.
  • the sensitivity of the MEMS acoustic transducer depends upon the mechanical characteristics of the membrane 2 of the microelectromechanical structure 1 (in particular upon its mechanical compliance) , and also upon assembly of the membrane 2 and of the rigid plate 3. Moreover, the volume of the front acoustic chamber (traversed in use by the incident acoustic pressure waves) and that of the rear acoustic chamber (set in use at a reference pressure) have a direct effect on the acoustic performance.
  • the volume of the front chamber determines in a known way the upper resonance frequency of the acoustic transducer, and hence its high frequency performance (the front chamber constitutes in fact a sort of Helmholtz resonator) : the smaller the volume of the front chamber, the higher the upper cutoff frequency of the microphone.
  • the aforesaid characteristics of the front and rear chambers of the MEMS acoustic transducer are determined, at least in part, by the corresponding package, i.e., by the housing, container, or coating that surrounds, totally or in part, the die or dice of semiconductor material of the acoustic transducer, enabling electrical connection from outside .
  • Figure 4 shows a known package solution for a MEMS acoustic transducer, here designated as a whole by 20, housing a first die 21, integrating the microelectromechanical structure 1, and moreover a second die 22, which is also made of semiconductor material, integrating an ASIC (Application Specific Integrated Circuit), electrically coupled to the microelectromechanical structure 1 and designated as a whole by 22 ' .
  • ASIC Application Specific Integrated Circuit
  • the first and second dice 21, 22 are coupled side-by-side on a substrate 23 of the package.
  • the first die 21 has the rear portion 5b of the structural layer 5 coupled to the substrate 23, whilst the second die 22 has a front surface 22a, at which the electrical components of the ASIC 22' are provided, with known techniques, and a rear surface 22b coupled to the substrate 23.
  • Electrical connections 25' between the first and second dice 21, 22 are provided via the wire-bonding technique between corresponding contact pads, designated as a whole by 26, whereas appropriate metallization layers and vias (not shown in detail) are provided in the substrate 23 for routing the electrical signals towards the outside of the package.
  • the pads 26 are carried by the second die 22 at the front surface 22a, and by the first die 21, at the front portion 5a of the structural layer 5.
  • Further electrical connections 25'', provided with the wire-bonding technique, are provided between the second die 22 and the substrate 23.
  • a cap 27 of the package is moreover coupled to the substrate 23, to enclose the first and second dice 21, 22.
  • This cap 27 may be made of pre-moulded metal or plastic with an internal metallization coating layer so as to prevent disturbance by external electromagnetic signals (by providing a sort of Faraday cage) .
  • the cap 27 moreover has an opening 28 to enable introduction of a flow of air from outside and acoustic pressure waves.
  • Electrical-contact elements (not shown), for example, in the form of conductive lands or bumps, are provided on the bottom part of the substrate 23 for soldering and electrical connection to an external printed circuit board . Therefore, there are several constraints imposed on the assembly of a MEMS acoustic transducer, which render particularly problematical its design, in particular when extremely compact dimensions are required, as, for example, in the case of portable applications.
  • SiPs Systems in Package
  • the MEMS acoustic transducer it may consequently be required to integrate within one and the same package of the MEMS acoustic transducer at least one further MEMS sensor.
  • this entails, for example, as regards the requirements of volume of the chambers of the acoustic transducer owing to the presence of the multiple dice of the MEMS sensors, in the case where the at least one additional sensor also requires a fluidic path towards the outside to perform the detection function for which it is designed, it is necessary to provide a further opening in the package. This additional opening may, however, modify the acoustic path of the pressure waves towards the MEMS acoustic transducer, jeopardizing or inhibiting proper operation thereof.
  • the aim of the present invention is to provide a total or partial solution to the above problems.
  • FIG. 1 shows, in top plan view, a microelectromechanical sensing structure of a MEMS acoustic transducer of a known type
  • FIG. 2 is a cross-sectional view of the structure of Figure 1, along the line of section II-II of Figure 1;
  • FIG. 3 is a cross-sectional view of the structure of Figure 1, along the line of section III-III of Figure 1;
  • FIG. 4 is a schematic cross-sectional view of a MEMS acoustic transducer with the corresponding package
  • FIG. 5 is a schematic cross-sectional view of an assembly of a semiconductor integrated device, according to one embodiment of the present invention.
  • FIG. 6 shows an enlarged portion of the assembly of Figure 5, with a fluidic path highlighted
  • FIG. 7 is a schematic cross-sectional view of an assembly of a semiconductor integrated device, according to a further embodiment of the present invention.
  • FIGS. 8a and 8b are schematic perspective views of the assembly of Figure 7;
  • FIG. 9 shows a block diagram of an electronic device including the assembly, according to one aspect of the present invention .
  • the present invention stems from the realization by the present Applicant that the ventilation holes provided through the rigid plate of the microelectromechanical sensing structure of a MEMS acoustic transducer (see the previous description, for example, with reference to Figures 1-3) are such that an uninterrupted fluidic path is created between the front chamber and the rear chamber of the same MEMS sensing structure.
  • FIG. 5 shows a semiconductor integrated device, designated as a whole by 30, provided with a package 32, comprising a base substrate 33 and a covering element 34, with a substantially cup-shaped conformation, coupled to the base substrate 33 to define an internal empty space 35 within the package 32.
  • An opening 36 is provided throughout the thickness of the covering element 34, and is designed to set in fluid communication the internal space 35 with the external environment, designated as a whole by 37 (the opening 36 constituting the only outlet towards the outside for the internal space 35) .
  • the base substrate 33 is, for example, constituted by a multilayer structure, made up of one or more layers of conductive material (generally metal) separated by one or more dielectric layers, for example, constituted by a BT (bismaleimide triazine) laminate. Electrical paths are provided through the base substrate 33 for connecting an inner surface 33a, facing the internal space 35, to an outer surface 33b thereof, facing the external environment 37, which supports appropriate electrical-connection elements, designated as a whole by 38, for example, in the form of an array of balls or bumps, in the case of so-called BGA (Ball Grid Array) packages, or lands, in the case of so-called LGA (Land Grid Array) packages, as in the case illustrated in Figure 5.
  • BGA Ball Grid Array
  • LGA Land Grid Array
  • the covering element 34 may be constituted by a multilayer, for example, including one or more plastic and/or metal layers, and may advantageously have a metal coating (not illustrated) on an inner surface 34a, in contact with the internal space 35, in order to provide an electromagnetic shield .
  • the covering element 34 is coupled to the base substrate 33 on its inner surface 33a, for example, with the bonding technique, by means of coupling elements 39, for example, in the form of conductive balls, or bumps, of solder paste.
  • the coupling elements 39 are arranged at appropriate contact regions on end portions of side walls of the covering element 34. Sealing regions (not illustrated) are moreover provided between the various coupling elements 39 so as to insulate the coupling elements 39 from one another and hermetically seal the coupling between the covering element 34 and the base substrate 33, along a corresponding coupling perimeter (for example, having a square or rectangular shape in plan view) .
  • both the coupling elements 39 and the sealing regions may be provided starting from one and the same material, for example, a special resin, such as ACP (Anisotropic Conductive Paste, manufactured by ThreeBond Co., Ltd.), which, when subjected to a single pressing process, in the presence of a known magnetic field oriented in the vertical direction, may be conductive in a vertical direction z (i.e., the direction of coupling between the covering element 34 and the base substrate 33) and not conductive in a horizontal direction (i.e., in the directions of separation between the various coupling elements 39 in the horizontal plane xy) .
  • ACP Application-Anisotropic Conductive Paste, manufactured by ThreeBond Co., Ltd.
  • the package 32 houses a MEMS acoustic transducer, designated once again by 20, for example, made as described previously with reference to Figures 1-3 (in general, the same reference numbers are here used to designate elements that are similar to the ones described previously, here not described again) , and hence comprising a first die 21, integrating a microelectromechanical structure 1, and moreover a second die 22, integrating an ASIC 22', electrically coupled to the microelectromechanical structure 1.
  • a MEMS acoustic transducer designated once again by 20, for example, made as described previously with reference to Figures 1-3 (in general, the same reference numbers are here used to designate elements that are similar to the ones described previously, here not described again) , and hence comprising a first die 21, integrating a microelectromechanical structure 1, and moreover a second die 22, integrating an ASIC 22', electrically coupled to the microelectromechanical structure 1.
  • the first die 21 is set in the package 32 so that the rear portion 5b of the structural layer 5 is in contact with the inner surface 34a of the covering element 34, being coupled thereto, for example, by means of a region of adhesive material (not illustrated) , and so that the cavity 6 faces, and is in direct fluid communication with, the opening 36 provided through the covering element 34.
  • the extension (in the horizontal plane xy) of the cavity 6 is greater than the corresponding extension of the opening 36 so that the opening 36 communicates entirely with the cavity 6 (without having a direct outlet towards the internal space 35 of the package 32)
  • the second die 22 is set coupled to the inner surface 34a of the covering element 34, alongside the first die 21 (in a so-called "side-by-side configuration") .
  • the second die 22 has the rear surface 22b coupled to the aforesaid inner surface 34a, for example, by means of a region of adhesive material (here not illustrated) .
  • the electrical connections between the ASIC 22' in the second die 22 and the microelectromechanical structure 1 in the first die 21 are provided with the wire-bonding technique between corresponding contact pads, designated once again by 26, through electrical wires 25.
  • the semiconductor integrated device 30 further comprises, within the same package 32, a further MEMS sensor 44, comprising a third die 45, including a structural layer of semiconductor material, in which a microelectromechanical sensing structure is provided, shown schematically and designated by 46, which requires a fluid communication with the external environment for the sensing operations.
  • the MEMS sensor 44 by means of the microelectromechanical sensing structure 46, provides a pressure sensor (as described more fully hereinafter) , or else a sensor for detecting chemical agents present in the external environment 37, or else an altimeter sensor or a humidity sensor.
  • the third die 45 has a front surface 45a, at which the microelectromechanical sensing structure 46 is provided, and a rear surface 45b coupled to the inner surface 33a of the base substrate 33, for example, by means of a region of adhesive material (not illustrated) .
  • the MEMS sensor 44 further comprises a fourth die 48, in which an ASIC 48' is provided, functionally coupled to the microelectromechanical sensing structure 46.
  • the fourth die 48 has a top surface 48a, at which the electronic components of the ASIC 48' are provided, and a bottom surface 48b, which is coupled to the inner surface 33a of the base substrate 33, for example, by means of a region of adhesive material (here not illustrated) .
  • the electrical connections between the ASIC 48' in the fourth die 48 and the microelectromechanical sensing structure 46 in the third die 45 are provided with the wire-bonding technique between corresponding contact pads, designated by 49, through electrical wires 50.
  • the MEMS sensor 44 and the MEMS acoustic transducer 20 are set vertically overlying one another within the package 32, with the MEMS acoustic transducer 20 set upside down with respect to the MEMS sensor 44.
  • the fourth die 48 is set substantially in a position vertically across from the first die 21, whilst the third die 45 is set substantially in a position vertically across from the second die 22 (it is clear, however, that different arrangements may be envisaged, according also to the dimensions of the package 32 and internal space 35, and to the dimensions of each die) .
  • Suitable electrical connections are moreover provided within the package 32, between the MEMS acoustic transducer 20 and the base substrate 33 (and possibly the MEMS sensor 44), and between the MEMS sensor 44 and the base substrate 33.
  • appropriate electrical connection paths are provided through the substrate 33, for example in the form of through vias designated by 51, so as to route the electrical signals towards the contact elements 38 carried by the outer surface 33b.
  • the second die 22 carries, at the top surface 22a, further contact pads 54, in electrical connection with the ASIC 22', which are connected by means of electrical wires 56 to the coupling elements 39, directly or by interposition, as in the case illustrated, of contacts 57, arranged at an end portion of walls of the covering element 34, designed for coupling with the base substrate 33 (in a way similar to what has been described, for example, in the patent application No. WO 2011/076910 filed in the name of the present applicant) .
  • the base substrate 33 may carry further contacts 58, facing the aforesaid contacts 57, and connected thereto by means of the coupling elements 39 in such a way as to transfer the electrical signals towards appropriate connection paths set in the base substrate 33 (here not shown) .
  • the electrical wires 56 could provide a direct electrical connection between the ASIC 22' in the second die 22 and the base substrate 33.
  • the fourth die 48 moreover carries, at its top surface 48a, further contact pads 59, designed for connection with further connection paths set in the base substrate 33 (which are not illustrated either) by means of further electrical wires 60.
  • Figure 6 shows in greater detail the pattern of the flow of air (or, in general, any other fluid) from the external environment 37 towards the inside of the package, according to one aspect of the present invention.
  • the flow (represented schematically, and the direction of which is indicated by arrows) coming from the external environment 37 traverses the opening 36, penetrates into the cavity 6, passes beyond the membrane 2, through the through openings 10 and the empty spaces alongside the membrane anchorages 8, and exits from the rigid plate 3 through the holes 13, thus reaching the internal space 35 in the package 32.
  • the flow in this way reaches the MEMS sensor 44 and in particular the corresponding microelectromechanical sensing structure 46, thus enabling the sensing operations.
  • the cavity 6 thus constitutes, in this arrangement, the front chamber of the MEMS acoustic transducer 20, whereas the internal space 35 defines the rear or back chamber of the same MEMS acoustic transducer 20, advantageously having large dimensions and volume, which may accurately be defined at the design stage.
  • the opening 36 defines both the acoustic access port for the MEMS acoustic transducer 20 and the access port for the MEMS sensor 44 (in other words, presence of two or more access ports towards the inside of the package 32 is not required) .
  • Figure 7 illustrates an embodiment in which the MEMS sensor 44 defines a pressure sensor.
  • the microelectromechanical sensing structure 46 comprises a structural layer 62 of semiconductor material.
  • a buried cavity 63 is set within the structural layer 62, and is separated from the top surface 45a by a flexible and deformable membrane 64, suspended over the buried cavity 63.
  • the buried cavity 63 is insulated and entirely contained within the structural layer 62.
  • Transduction elements 65 in particular piezoresistors obtained by diffusion or implantation of dopant atoms, are arranged within the membrane 64, detect deformations of the membrane 64 (due to the pressure applied) , and generate corresponding electrical signals as a function of the pressure to be detected.
  • Figures 8a and 8b are schematic and simplified perspective views of a possible embodiment of the semiconductor integrated device 30, obtained as discussed previously in detail.
  • Figure 9 shows an electronic device 70 that uses the semiconductor integrated device 30, provided, as previously illustrated, in the form of a SiP.
  • the electronic device 70 comprises, in addition to the semiconductor integrated device 30, a microprocessor (CPU) 71, a memory block 72, connected to the microprocessor 71, and an input/output interface 73, for example, a keyboard and/or a display, which is also connected to the microprocessor 71.
  • a microprocessor CPU
  • memory block 72 connected to the microprocessor 71
  • an input/output interface 73 for example, a keyboard and/or a display, which is also connected to the microprocessor 71.
  • the semiconductor integrated device 30 communicates with the microprocessor 71, and in particular transmits the electrical signals processed by the ASICs associated to the microelectromechanical sensing structures.
  • a loudspeaker 76 may be present, for generating a sound on an audio output (not shown) of the electronic device 70, as a function of the electrical signals coming from the semiconductor integrated device 30.
  • the electronic device 70 is preferably a mobile communication device, such as, for example, a cellphone, a PDA, a notebook, but also a voice recorder, a reader of audio files with capacity of voice recording, a console for videogames, a hydrophone, etc.
  • a mobile communication device such as, for example, a cellphone, a PDA, a notebook, but also a voice recorder, a reader of audio files with capacity of voice recording, a console for videogames, a hydrophone, etc.
  • the assembly described enables integration, within one and the same package, of an acoustic transducer and a further MEMS sensor, which also requires a fluid communication with the outside of the package, using a single access port towards the space internal to the package, thus preventing any possible interference between multiple acoustic paths within the package.
  • the same flow that traverses the ventilation holes provided through the rigid plate of the sensing structure of the MEMS acoustic transducer also reaches the further MEMS sensor, enabling the corresponding sensing structure to detect the desired quantity (for example, a pressure value) .
  • the further MEMS sensor may integrate in a single die of semiconductor material both the microelectromechanical sensing structure and the associated ASIC.
  • a single ASIC (with corresponding die) may be provided for processing electrical quantities generated by the microelectromechanical sensing structures of both MEMS sensors present in the package . If the space inside the package so enables, several MEMS sensors may possibly be housed within the same package in addition to the MEMS acoustic transducer, each possibly provided with a sensing element that requires a fluid communication towards the external environment.

Abstract

L'invention concerne un ensemble dispositif intégré à semi-conducteur (30) comportant un boîtier (32) muni d'un élément de base (33) et d'un élément de recouvrement (34) qui définissent un espace intérieur (35), une ouverture d'accès (36) étant ménagée à travers l'élément de recouvrement (34) pour accéder à l'espace intérieur (35) à partir de l'extérieur. Un transducteur acoustique MEMS (20) est logé dans le boîtier (32) et comprend une puce (21) intégrant une structure de détection microélectromécanique (1) définissant une membrane (2) suspendue au-dessus d'une cavité (6) et faisant face à une plaque rigide (3). Le transducteur acoustique MEMS (20) est configuré de telle manière que la puce (21) est placée directement entre l'ouverture d'accès (36) et l'espace intérieur (35), définissant un trajet fluidique ininterrompu comprenant l'ouverture d'accès (36), la cavité (6) et l'espace intérieur (35). Le dispositif intégré à semi-conducteur (30) comprend un autre capteur MEMS (44) muni d'une puce (45) intégrant une structure de détection microélectromécanique respective (46) présentant un élément de détection (64) se trouvant en communication fluidique avec l'extérieur par le même trajet fluidique.
PCT/EP2013/058029 2012-04-17 2013-04-17 Ensemble dispositif intégré à semi-conducteur comprenant un transducteur acoustique mems WO2013156539A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITTO2012A000335 2012-04-17
ITTO20120335 2012-04-17

Publications (1)

Publication Number Publication Date
WO2013156539A1 true WO2013156539A1 (fr) 2013-10-24

Family

ID=46321343

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/058029 WO2013156539A1 (fr) 2012-04-17 2013-04-17 Ensemble dispositif intégré à semi-conducteur comprenant un transducteur acoustique mems

Country Status (1)

Country Link
WO (1) WO2013156539A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014203881A1 (de) * 2014-03-04 2015-09-10 Robert Bosch Gmbh Bauteil mit Mikrofon- und Mediensensorfunktion
DE102014106220A1 (de) * 2014-05-05 2015-11-05 Epcos Ag Sensorbauelement mit zwei Sensorfunktionen
KR20170002547A (ko) * 2014-05-09 2017-01-06 인벤센스, 인크. Mems 음향 센서 및 환경 센서를 포함하는 집적 패키지 및 이를 제조하는 방법
US9540229B2 (en) 2015-05-29 2017-01-10 Stmicroelectronics S.R.L. Packaged sensor assembly
WO2017015516A1 (fr) * 2015-07-23 2017-01-26 Knowles Electronics, Llc Microphone avec capteur d'humidité
IT201600121223A1 (it) * 2016-11-30 2018-05-30 St Microelectronics Srl Modulo multi-trasduttore, apparecchiatura elettronica includente il modulo multi-trasduttore e metodo di fabbricazione del modulo multi-trasduttore
KR20190104896A (ko) * 2018-03-01 2019-09-11 인피니언 테크놀로지스 아게 Mems 어셈블리
CN111192856A (zh) * 2018-11-14 2020-05-22 英飞凌科技股份有限公司 具有(多个)声学感测设备和毫米波感测元件的封装体
US10911867B2 (en) 2018-02-13 2021-02-02 Oticon A/S In-the-ear hearing aid device, a hearing aid, and an electro-acoustic transducer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100303273A1 (en) * 2009-06-02 2010-12-02 Panasonic Corporation Microphone apparatus
US20100322443A1 (en) * 2009-06-19 2010-12-23 Aac Acoustic Technologies (Shenzhen) Co., Ltd Mems microphone
US20110110550A1 (en) * 2009-11-11 2011-05-12 Analog Devices, Inc. Microphone with Variable Low Frequency Cutoff
CN102158787A (zh) * 2011-03-15 2011-08-17 迈尔森电子（天津）有限公司 Mems麦克风与压力集成传感器及其制作方法
US20120027234A1 (en) * 2010-07-30 2012-02-02 Analog Devices, Inc. Reduced Footprint Microphone System with Spacer Member Having Through-Hole

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100303273A1 (en) * 2009-06-02 2010-12-02 Panasonic Corporation Microphone apparatus
US20100322443A1 (en) * 2009-06-19 2010-12-23 Aac Acoustic Technologies (Shenzhen) Co., Ltd Mems microphone
US20110110550A1 (en) * 2009-11-11 2011-05-12 Analog Devices, Inc. Microphone with Variable Low Frequency Cutoff
US20120027234A1 (en) * 2010-07-30 2012-02-02 Analog Devices, Inc. Reduced Footprint Microphone System with Spacer Member Having Through-Hole
CN102158787A (zh) * 2011-03-15 2011-08-17 迈尔森电子（天津）有限公司 Mems麦克风与压力集成传感器及其制作方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014203881A1 (de) * 2014-03-04 2015-09-10 Robert Bosch Gmbh Bauteil mit Mikrofon- und Mediensensorfunktion
DE102014106220A1 (de) * 2014-05-05 2015-11-05 Epcos Ag Sensorbauelement mit zwei Sensorfunktionen
US20170113924A1 (en) * 2014-05-05 2017-04-27 Epcos Ag Sensor component having two sensor functions
DE102014106220B4 (de) 2014-05-05 2020-06-18 Tdk Corporation Sensorbauelement mit zwei Sensorfunktionen
US10544035B2 (en) 2014-05-05 2020-01-28 Tdk Corporation Sensor component having two sensor functions
KR101984369B1 (ko) * 2014-05-09 2019-09-03 인벤센스, 인크. Mems 음향 센서 및 환경 센서를 포함하는 집적 패키지 및 이를 제조하는 방법
KR20170002547A (ko) * 2014-05-09 2017-01-06 인벤센스, 인크. Mems 음향 센서 및 환경 센서를 포함하는 집적 패키지 및 이를 제조하는 방법
EP3140246A1 (fr) * 2014-05-09 2017-03-15 InvenSense, Inc. Boîtier intégré contenant un capteur acoustique mems et un capteur d'environnement, et procédé de fabrication de celui-ci
EP3140246A4 (fr) * 2014-05-09 2017-04-26 InvenSense, Inc. Boîtier intégré contenant un capteur acoustique mems et un capteur d'environnement, et procédé de fabrication de celui-ci
US10343897B2 (en) 2014-05-09 2019-07-09 Invensense, Inc. Integrated package containing MEMS acoustic sensor and environmental sensor and methodology for fabricating same
US9540229B2 (en) 2015-05-29 2017-01-10 Stmicroelectronics S.R.L. Packaged sensor assembly
WO2017015516A1 (fr) * 2015-07-23 2017-01-26 Knowles Electronics, Llc Microphone avec capteur d'humidité
EP3330688A1 (fr) * 2016-11-30 2018-06-06 STMicroelectronics S.r.l. Module à plusieurs transducteurs, appareil électronique comprenant le module à plusieurs transducteurs et procédé de fabrication du module à plusieurs transducteurs
US20180149538A1 (en) * 2016-11-30 2018-05-31 Stmicroelectronics S.R.L. Multi-transducer modulus, electronic apparatus including the multi-transducer modulus and method for manufacturing the multi-transducer modulus
US10605684B2 (en) 2016-11-30 2020-03-31 Stmicroelectronics S.R.L. Multi-transducer modulus, electronic apparatus including the multi-transducer modulus and method for manufacturing the multi-transducer modulus
IT201600121223A1 (it) * 2016-11-30 2018-05-30 St Microelectronics Srl Modulo multi-trasduttore, apparecchiatura elettronica includente il modulo multi-trasduttore e metodo di fabbricazione del modulo multi-trasduttore
US10911867B2 (en) 2018-02-13 2021-02-02 Oticon A/S In-the-ear hearing aid device, a hearing aid, and an electro-acoustic transducer
US11350211B2 (en) 2018-02-13 2022-05-31 Oticon A/S In-the-ear hearing aid device, a hearing aid, and an electro-acoustic transducer
US11653145B2 (en) 2018-02-13 2023-05-16 Oticon A/S In-the-ear hearing aid device, a hearing aid, and an electro-acoustic transducer
KR20190104896A (ko) * 2018-03-01 2019-09-11 인피니언 테크놀로지스 아게 Mems 어셈블리
KR102645268B1 (ko) * 2018-03-01 2024-03-11 인피니언 테크놀로지스 아게 Mems 어셈블리
CN111192856A (zh) * 2018-11-14 2020-05-22 英飞凌科技股份有限公司 具有(多个)声学感测设备和毫米波感测元件的封装体

Similar Documents

Publication Publication Date Title
US9628919B2 (en) Wafer level assembly of a MEMS sensor device and related MEMS sensor device
US9769554B2 (en) Semiconductor integrated device for acoustic applications with contamination protection element, and manufacturing method thereof
US10597287B2 (en) Multi-chamber transducer module, apparatus including the multi-chamber transducer module and method of manufacturing the multi-chamber transducer module
US8836111B2 (en) Semiconductor integrated device assembly and related manufacturing process
US8433084B2 (en) Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8837754B2 (en) Microelectromechanical transducer and corresponding assembly process
WO2013156539A1 (fr) Ensemble dispositif intégré à semi-conducteur comprenant un transducteur acoustique mems
JP5174673B2 (ja) 基板レベル・アセンブリを具えた電子装置及びその製造処理方法
US11317219B2 (en) Method for manufacturing a thin filtering membrane and an acoustic transducer device including the filtering membrane
CN107343249B (zh) 多设备模块、包括该模块的装置和制造该模块的方法
EP3330689B1 (fr) Module de transducteur à multiples dispositifs, appareil électronique comprenant le module de transducteur et procédé de fabrication du module de transducteur
US9143849B2 (en) Sensor module
US10605684B2 (en) Multi-transducer modulus, electronic apparatus including the multi-transducer modulus and method for manufacturing the multi-transducer modulus
CN104249990B (zh) 包含流体路径的mems器件及其制造工艺
CN109644307B (zh) 麦克风和压力传感器封装件以及制造麦克风和压力传感器封装件的方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13716799

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13716799

Country of ref document: EP

Kind code of ref document: A1