WO2013144798A1 - Cavité optique comprenant un dispositif d'émission de lumière et une matière de conversion de longueur d'onde - Google Patents

Cavité optique comprenant un dispositif d'émission de lumière et une matière de conversion de longueur d'onde Download PDF

Info

Publication number
WO2013144798A1
WO2013144798A1 PCT/IB2013/052287 IB2013052287W WO2013144798A1 WO 2013144798 A1 WO2013144798 A1 WO 2013144798A1 IB 2013052287 W IB2013052287 W IB 2013052287W WO 2013144798 A1 WO2013144798 A1 WO 2013144798A1
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength converting
converting material
light
region
substrate
Prior art date
Application number
PCT/IB2013/052287
Other languages
English (en)
Inventor
Kenneth VAMPOLA
Mark Melvin Butterworth
Han Ho Choi
Original Assignee
Koninklijke Philips N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips N.V. filed Critical Koninklijke Philips N.V.
Publication of WO2013144798A1 publication Critical patent/WO2013144798A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Des modes de réalisation de la présente invention comprennent une diode électroluminescente à semi-conducteurs fixée à un substrat. Une première région de matière de conversion de longueur d'onde est disposée sur le substrat. La matière de conversion de longueur d'onde est configurée pour absorber une lumière émise par la diode électroluminescente à semi-conducteurs et émettre une lumière à une longueur d'onde différente. Le substrat est disposé à proximité d'une surface inférieure d'une cavité optique. Une seconde région de matière de conversion de longueur d'onde est disposée à proximité d'une surface supérieure de la cavité optique. Un filtre est disposé à proximité d'une surface supérieure de la cavité optique. Le filtre est configuré pour réfléchir une partie de lumière émise par la pluralité de diodes électroluminescentes à semi-conducteurs et émettre une partie de lumière émise par la matière de conversion de longueur d'onde.
PCT/IB2013/052287 2012-03-30 2013-03-22 Cavité optique comprenant un dispositif d'émission de lumière et une matière de conversion de longueur d'onde WO2013144798A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261617962P 2012-03-30 2012-03-30
US61/617,962 2012-03-30

Publications (1)

Publication Number Publication Date
WO2013144798A1 true WO2013144798A1 (fr) 2013-10-03

Family

ID=48444452

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2013/052287 WO2013144798A1 (fr) 2012-03-30 2013-03-22 Cavité optique comprenant un dispositif d'émission de lumière et une matière de conversion de longueur d'onde

Country Status (1)

Country Link
WO (1) WO2013144798A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604626A (zh) * 2015-10-19 2018-09-28 亮锐控股有限公司 具有纹理化衬底的波长转换发光设备
CN111629884A (zh) * 2018-01-24 2020-09-04 惠普发展公司，有限责任合伙企业 用于构造材料加热的方法和设备
DE102021114225A1 (de) 2021-06-01 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Beleuchtungseinrichtung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052152B2 (en) 2003-10-03 2006-05-30 Philips Lumileds Lighting Company, Llc LCD backlight using two-dimensional array LEDs
US20060202105A1 (en) * 2005-03-14 2006-09-14 Lumileds Lighting U.S., Llc Wavelength-converted semiconductor light emitting device
EP1976030A1 (fr) * 2006-01-04 2008-10-01 Rohm Co., Ltd. Lampe a diode electroluminescente ultramince et son procede de fabrication
US20110069496A1 (en) * 2009-09-18 2011-03-24 Luxingtek, Ltd. Lighting device, light spreading plate and method for manufacturing the same
US20110090672A1 (en) * 2009-10-16 2011-04-21 Tsinghua University Light guide plates and backlight module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052152B2 (en) 2003-10-03 2006-05-30 Philips Lumileds Lighting Company, Llc LCD backlight using two-dimensional array LEDs
US20060202105A1 (en) * 2005-03-14 2006-09-14 Lumileds Lighting U.S., Llc Wavelength-converted semiconductor light emitting device
EP1976030A1 (fr) * 2006-01-04 2008-10-01 Rohm Co., Ltd. Lampe a diode electroluminescente ultramince et son procede de fabrication
US20110069496A1 (en) * 2009-09-18 2011-03-24 Luxingtek, Ltd. Lighting device, light spreading plate and method for manufacturing the same
US20110090672A1 (en) * 2009-10-16 2011-04-21 Tsinghua University Light guide plates and backlight module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604626A (zh) * 2015-10-19 2018-09-28 亮锐控股有限公司 具有纹理化衬底的波长转换发光设备
CN111629884A (zh) * 2018-01-24 2020-09-04 惠普发展公司，有限责任合伙企业 用于构造材料加热的方法和设备
CN111629884B (zh) * 2018-01-24 2022-11-08 惠普发展公司，有限责任合伙企业 用于构造材料加热的方法和设备
US11613073B2 (en) 2018-01-24 2023-03-28 Hewlett-Packard Development Company, L.P. Method and apparatus for build material heating
DE102021114225A1 (de) 2021-06-01 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Beleuchtungseinrichtung

Similar Documents

Publication Publication Date Title
US10833227B2 (en) Optical cavity including a light emitting device and wavelength converting material
US10224466B2 (en) Light emitting device with wavelength converting side coat
JP6248431B2 (ja) 半導体発光装置の製造方法
US10998473B2 (en) Packaged wavelength converted light emitting device
EP2997610B1 (fr) Dispositif électroluminescent ayant un élément optique et un réflecteur
JP2019016821A (ja) 半導体発光装置
KR101575655B1 (ko) 발광 소자 패키지 및 백라이트 유닛
CN115428172A (zh) 用于发光设备的光改变材料布置
WO2013144798A1 (fr) Cavité optique comprenant un dispositif d'émission de lumière et une matière de conversion de longueur d'onde
JP6862819B2 (ja) 発光装置の製造方法
JP6432654B2 (ja) 半導体発光装置
JP7227528B2 (ja) 半導体発光装置
JP6978708B2 (ja) 半導体発光装置
US11837684B2 (en) Submount structures for light emitting diode packages

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13722835

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13722835

Country of ref document: EP

Kind code of ref document: A1