WO2013137708A1 - Dispositif de cellule solaire à grand angle d'ouverture - Google Patents

Dispositif de cellule solaire à grand angle d'ouverture Download PDF

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Publication number
WO2013137708A1
WO2013137708A1 PCT/MY2012/000051 MY2012000051W WO2013137708A1 WO 2013137708 A1 WO2013137708 A1 WO 2013137708A1 MY 2012000051 W MY2012000051 W MY 2012000051W WO 2013137708 A1 WO2013137708 A1 WO 2013137708A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
substrate
light
nano
coupling layer
Prior art date
Application number
PCT/MY2012/000051
Other languages
English (en)
Inventor
Witjaksono Gunawan
Original Assignee
Mimos, Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos, Berhad filed Critical Mimos, Berhad
Priority to PCT/MY2012/000051 priority Critical patent/WO2013137708A1/fr
Publication of WO2013137708A1 publication Critical patent/WO2013137708A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to the improvement on fabrication of solar cell and more particularly related to a wide acceptance angle of solar cell device.
  • solar cell should be able to capture all light emitted from the sun during daytime, meaning that the light absorption by the solar cell should not be dependence of the position of the sun at given surface area of the solar cell.
  • the incidence angles of light hitting the planar surface of the solar cell from the sun keeps changing, hence, the light absorption is also affected.
  • the effectiveness of incident light depends on a factor of sin ( ) , where a is the angle of the light incidence to the normal axis of the solar cell.
  • Main issues relating to the use of solar cell are variation of sunlight angle to the solar cell during daytime results in low and variant efficiency of the solar cell.
  • Another problem is addition of mechanical tracking equipment and/or mirrors and lenses result in complexity of the solar system and the same time making the solar system bulkier and heavier.
  • brittleness of the substrate makes it hard to implement on the micro devices, i.e. sensor motes.
  • the fixed position of the solar cell (on the micro devices) makes it difficult to implement on real application.
  • US Patent 7,655,860 proposed the solar cell, which has a substrate having a horizontal surface, and an electrode layer on the surface.
  • the electrode has a plurality of vertical surfaces substantially perpendicular to the horizontal surfaces, and light harvesting rods are coupled to the vertical surface of the electrode.
  • This approach successfully guide the light inside the cell and allow them to hit the active region, however, it does not solve the sin (a) problem.
  • the planar structure will not be effective coupling the light when the sun position changes.
  • the proposed invention is to increase the light coupling and the same time guide the light within the cell to hit the active region effectively.
  • the light coupling is increased by capturing all incident lights at any position of the sun during the daytime.
  • This proposed invention is to solve the sin (a) problem. Later the light that is coupled into the cell will be guided further through the tapered walls and direct it to the active region so eliminate loss of light within the cell.
  • the present invention aims to provide to the improvement of fabrication of solar cell which more particularly to a wide acceptance angle of solar cell device.
  • a wide acceptance angle solar cell device comprising a substrate of active material with a energy coupling layer on the top, which is geometrically structured with nano- structures with the outer surfaces having their normal axis perpendicular to the tangential axis of the substrate and is, at least, symmetrically curved.
  • the substrate of active material is flexible and/or solid material.
  • the substrate of active material is curved or flat substrate .
  • the energy coupling layer is patterned with nano structure.
  • the nano structure baseline structurally follows the shape of the said substrate of active material.
  • the nano structure is geometrically texture of, at least, tubes or wires to guide the light to the active region .
  • the nano tubes having tapered wall to enhance the guiding mechanism.
  • the nano tubes of flat substrate having the top surface facing upward with an angle while the nano tube baseline is horizontally flat.
  • the energy coupling layer is anti reflecting material.
  • a method of fabricating a solar cell with flexible substrate comprising the steps of patterning top energy coupling layer by, but not limited to, lithography process, with regular shapes, using selective etching to etch a energy coupling layer thereby producing geometric structure of, at least, tubes or wires, and curving the flexible substrate after completed the process by an angle.
  • the curve angles are in the range of 2° - 45°.
  • FIG. 1 describes the sun light incident into the solar cell and the sun movement during dawn to dusk.
  • Fig. 2 illustrates basic structure of wide-angle acceptance solar cell.
  • Fig. 3 shows portion of light that is
  • Fig. 4 shows the mechanism of total internal reflection.
  • Fig. 5 describes the path of light on the incident, escaped and guided light.
  • Fig 6 shows (a) acceptance angle of light incident of geometrical structure on the coating layer to ensure total internal reflection; and (b) curved substrate to widen the acceptance angle.
  • Fig 7 describes the curved substrate with geometrical structures of the coating layer with their top surface normal axis perpendicular to the tangential of the substrate below it.
  • the efficiency of solar cells (13) depends on the electrical power it generates out as percentage of the power in incident sunlight (11) .
  • One of the most fundamental limitations on the efficiency of a solar cell (13) is light or energy capturing due to the position of sun (10), light reflection (12) and light guidance, to the active region.
  • the light (11) is hitting the surface of the solar cell (13)
  • a fraction of the light is reflected (12) and the rest of the light that is transmitted could be diverted out and not reaching the active region. Only light (13) that hitting the active layer will potentially produce the electron for energy generation.
  • Other important aspect in efficiency of solar cell (13) is its location with respect to the solar cell (13) . As the sun (10) moving from dawn to dust, the effective light (11) hitting the solar cell (13) also changing.
  • the invention aims to solve the sin a problem using geometric structuring solar cell on the top/coating surface (111) , in the form of tapered side walls of the (nano) tubes (110), and are formed at angle such that the incident light top surface could be either curved or normal to the substrate.
  • Such curved surface (111) and tapered (nano) tubes (110) result in increased light absorption at all angles of the light source and effectively guide the light inside the tapered tubes by internal reflection thereby increasing the light being absorbed .
  • the coating layer (211) is antireflective material to allow the incident light to transmit to the next layer without any reflection.
  • Fig. 3 shows the mechanism how light is transmitted and reflected when the photon hitting the coating layers (211) through air (210) and the following show Equation 1, 2, and 3.
  • the light can be converted efficiently as long as all the light in the coating layer can be guided to the active region.
  • the guiding mechanism can be served using total internal reflection from the glass region (311) to the air region (310) as shown in Figure 4.
  • Fig. 5 shows complete light paths of light from incident (410) to guided light (412) and also includes the escaped light (411). According to Snell's law only certain incident angles could have no escaped light (411).
  • a solar cell device may comprise a coating layer with a structure (510) to capture and guide the incident energy from a photon source when the light impinges the top surface and channel that photon into the active region. Furthermore the solar cell device may have curve baseline surface (511), in order to enhance the acceptance angle of the incident energy from a photon source regardless of the position of that source.
  • the solar cell device may comprises a geometric structure of the coating, i.e. nano tubes (670) in such a way that the surface of the geometrical structure (610) facing outward parallel to a normal axis (620) to its substrate below it.
  • the said normal axis (620) is always perpendicular to tangential axis (630) of the curved substrate surface (650).
  • Said curved substrate (650) has an angle such a way that it can optimize the acceptance angle of the light incident into the substrate.
  • the angle of the curved substrate, ⁇ can be determined in order to have full acceptance angle on any position of the sun during dawn to dusk.
  • the substrate and the active layer (660) of the solar cell device is flexible substrate which can be bended to meet the full acceptance angle.
  • the geometrical structure could have a flat substrate with oriented top surface of the geometrical structure.
  • the top layer of the solar cell device is the geometrical structure (710) , with its top surface, (720), oriented outward to allow widen angle acceptance of incident light.
  • the angles of outward-facing surfaces of each said geometrical structures are determined by the number of the said geometrical structure, the cell surface and the cumulative angle, ⁇ .
  • the cumulative angle gives full angle acceptance of incident light on the solar cell.
  • This geometrical structure is having the top surface wider than the bottom surface to better receiving and guiding the photons, which have been coupled to the structure, and direct it to the active region to effectively trigger the creation of electrons.
  • each of the geometrical structure accepts some range of incident angles before it guides the photon by total internal reflection and the cumulative angle ensures full acceptance angle.
  • the geometrical structures may be design to have sloped walls (740) thus enhancing further the photon trapping mechanism with solid structure (750).
  • the geometrical structure may further comprise nano tube structure or nano pillars with narrower base and, in addition, the tubes or nano pillars may include support layer to protect the structural shape of the geometrical structures .

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif de cellule solaire à grand angle d'ouverture (200), comprenant un substrat (111) de matériau actif avec une couche de couplage d'énergie sur le sommet, qui est structuré géométriquement avec des nanostructures (110) dont les surfaces externes ont leur axe normal perpendiculaire à l'axe tangentiel du substrat (111), et qui est, au moins, incurvé de manière symétrique.
PCT/MY2012/000051 2012-03-13 2012-03-13 Dispositif de cellule solaire à grand angle d'ouverture WO2013137708A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/MY2012/000051 WO2013137708A1 (fr) 2012-03-13 2012-03-13 Dispositif de cellule solaire à grand angle d'ouverture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/MY2012/000051 WO2013137708A1 (fr) 2012-03-13 2012-03-13 Dispositif de cellule solaire à grand angle d'ouverture

Publications (1)

Publication Number Publication Date
WO2013137708A1 true WO2013137708A1 (fr) 2013-09-19

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189014A1 (en) * 2004-02-19 2005-09-01 Konarka Technologies, Inc. Photovoltaic cell with spacers
US20090217972A1 (en) * 2008-02-29 2009-09-03 International Business Machines Corporation Techniques for Enhancing Efficiency of Photovoltaic Devices Using High-Aspect-Ratio Nanostructures
WO2010065635A2 (fr) * 2008-12-02 2010-06-10 Massachusetts Institute Of Technology Structures coniques métalliques à sous-longueur d'onde comme absorbeur solaire sélectif

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189014A1 (en) * 2004-02-19 2005-09-01 Konarka Technologies, Inc. Photovoltaic cell with spacers
US20090217972A1 (en) * 2008-02-29 2009-09-03 International Business Machines Corporation Techniques for Enhancing Efficiency of Photovoltaic Devices Using High-Aspect-Ratio Nanostructures
WO2010065635A2 (fr) * 2008-12-02 2010-06-10 Massachusetts Institute Of Technology Structures coniques métalliques à sous-longueur d'onde comme absorbeur solaire sélectif

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