WO2013131693A1 - Appareil de capture d'ions, source de rayonnement plasma produit par laser, appareil lithographique - Google Patents

Appareil de capture d'ions, source de rayonnement plasma produit par laser, appareil lithographique Download PDF

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Publication number
WO2013131693A1
WO2013131693A1 PCT/EP2013/051880 EP2013051880W WO2013131693A1 WO 2013131693 A1 WO2013131693 A1 WO 2013131693A1 EP 2013051880 W EP2013051880 W EP 2013051880W WO 2013131693 A1 WO2013131693 A1 WO 2013131693A1
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WO
WIPO (PCT)
Prior art keywords
plasma
radiation
magnetic
radiation source
magnetic field
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Application number
PCT/EP2013/051880
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English (en)
Inventor
Hermanus Kreuwel
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Asml Netherlands B.V.
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Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2013131693A1 publication Critical patent/WO2013131693A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component

Definitions

  • the present invention relates to an ion capture apparatus for a laser produced plasma (LPP) radiation source apparatus, a laser produced plasma (LPP) radiation source apparatus comprising the ion capture apparatus, and a lithographic apparatus comprising the LPP radiation source apparatus.
  • LPP laser produced plasma
  • LPP laser produced plasma
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures.
  • lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured.
  • a theoretical estimate of the limits of pattern printing can be given by the Rayleigh criterion for resolution as shown in equation (1): (1) where ⁇ is the wavelength of the radiation used, NA is the numerical aperture of the projection system used to print the pattern, kl is a process dependent adjustment factor, also called the Rayleigh constant, and CD is the feature size (or critical dimension) of the printed feature. It follows from equation (1) that reduction of the minimum printable size of features can be obtained in three ways: by shortening the exposure wavelength ⁇ , by increasing the numerical aperture NA or by decreasing the value of kl .
  • EUV radiation is electromagnetic radiation having a wavelength within the range of 5-20 nm, for example within the range of 13-14 nm. It has further been proposed that EUV radiation with a wavelength of less than 10 nm could be used, for example within the range of 5-10 nm such as 6.7 nm or 6.8 nm. Such radiation is termed extreme ultraviolet radiation or soft x-ray radiation.
  • Possible sources include, for example, laser produced plasma (LPP) radiation sources, discharge plasma sources, or sources based on synchrotron radiation provided by an electron storage ring.
  • LPP laser produced plasma
  • EUV radiation may be produced using a plasma.
  • a radiation system for producing EUV radiation may include a laser for exciting a fuel to provide the plasma, and a source collector apparatus for containing the plasma.
  • the plasma may be created, for example, by directing a laser beam at a fuel, such as particles of a suitable material (e.g., tin), or a stream of a suitable gas or vapor, such as Xe gas or Li vapor.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector.
  • the radiation collector may be a mirrored normal incidence radiation collector, which receives the radiation and focuses the radiation into a beam.
  • the source collector apparatus may include an enclosing structure or chamber arranged to provide a vacuum environment to support the plasma.
  • a radiation system is typically termed a laser produced plasma (LPP) radiation source.
  • LPP laser produced plasma
  • the use of a magnetic field to collect and confine tin ions emitted from the plasma is known.
  • the purpose is to collect the ions using an ion capture apparatus including ion catcher devices.
  • Such an ion capture apparatus is arranged to prevent ions from reaching the mirrored surface of the radiation collector, or from contaminating the enclosing structure with tin.
  • an ion capture apparatus for a laser produced plasma (LPP) radiation source apparatus comprises a magnetic field generator, such as for example magnetic coils, and two magnetic cores.
  • the two magnetic cores are arranged to channel a magnetic field generated by said magnetic field generator, such that said magnetic field is largely confined to, and approximately homogeneous within, a region within the vicinity of the plasma of said LPP radiation source.
  • said magnetic field generator comprise two respective magnetic coils, such that with each magnetic core there is associated a respective coil.
  • each of said magnetic cores extends from each respective coil towards the plasma.
  • a laser produced plasma (LPP) radiation source apparatus comprising an ion capture apparatus according to the invention comprising a magnetic field generator and two magnetic cores as described above, and a radiation collector, and a chamber arranged to provide a vacuum environment, said laser produced plasma radiation source apparatus being arranged such that said radiation collector, said plasma and said region within the vicinity of the plasma in which the magnetic field is largely confined is comprised within said chamber.
  • LPP laser produced plasma
  • a lithographic apparatus comprising the laser produced plasma (LPP) radiation source apparatus according to the invention as described above configured to generate a beam of EUV radiation, and an illumination system configured to condition the radiation beam, and a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate.
  • LPP laser produced plasma
  • Figure 1 depicts schematically a lithographic apparatus having reflective projection optics
  • Figure 2 is a more detailed view of the apparatus of Figure 1 ;
  • Figure 3 illustrates a prior art ion capture arrangement
  • Figure 4 illustrates magnetic field lines of the prior art ion capture arrangement shown in Figure 3.
  • Figure 5 illustrates an ion capture apparatus according to an embodiment of the invention.
  • Figure 1 schematically depicts a lithographic apparatus 100 including a laser produced plasma radiation source apparatus SO according to one embodiment of the invention.
  • the apparatus comprises:
  • an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation).
  • a radiation beam B e.g., EUV radiation
  • a support structure e.g., a mask table
  • MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device;
  • a substrate table e.g., a wafer table
  • WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate
  • a projection system e.g., a reflective projection system
  • PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • optical components such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system.
  • patterning device should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross- section such as to create a pattern in a target portion of the substrate.
  • the pattern imparted to the radiation beam may correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam that is reflected by the mirror matrix.
  • the projection system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum for
  • a vacuum environment may therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps.
  • the apparatus is of a reflective type (e.g., employing a reflective mask).
  • the illuminator IL receives an extreme ultra violet radiation beam from the source collector apparatus SO.
  • Methods to produce EUV light include, but are not necessarily limited to, converting a material into a plasma state that has at least one element, e.g., xenon, lithium or tin, with one or more emission lines in the EUV range.
  • LPP laser produced plasma
  • the required plasma can be produced by irradiating a fuel, such as a droplet, stream or cluster of material having the required line- emitting element, with a laser beam.
  • the laser produced plasma radiation source apparatus SO may be part of an EUV radiation system including a laser, not shown in Figure 1 , for providing the laser beam exciting the fuel.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector disposed in the laser produced plasma radiation source apparatus.
  • output radiation e.g., EUV radiation
  • the laser and the laser produced plasma radiation source apparatus may be separate entities, for example when a C0 2 laser is used to provide the laser beam for fuel excitation.
  • the laser is not considered to form part of the lithographic apparatus and the radiation beam is passed from the laser to the laser produced plasma radiation source apparatus with the aid of a beam delivery system comprising, for example, suitable directing mirrors and/or a beam expander.
  • the laser may be an integral part of the laser produced radiation source apparatus.
  • the illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
  • the illuminator IL may comprise various other components, such as facetted field and pupil mirror devices. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam B is incident on the patterning device (e.g., mask)
  • the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor PS1 can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B.
  • Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks PI, P2.
  • FIG. 2 shows the lithographic apparatus 100 in more detail, including the laser produced plasma radiation source apparatus SO, the illumination system IL, and the projection system PS.
  • the laser produced plasma radiation source apparatus SO is constructed and arranged such that a vacuum environment can be maintained in an enclosing structure 220 of the laser produced plasma radiation source apparatus SO.
  • the systems IL and PS are likewise contained within vacuum environments of their own.
  • An EUV radiation emitting plasma 210 may be formed by the laser produced plasma (LPP) radiation source.
  • the function of laser produced plasma radiation source apparatus SO is to deliver EUV radiation beam 20 from the plasma 210 such that it is focused in a virtual source point.
  • the virtual source point is commonly referred to as the intermediate focus (IF), and the laser produced plasma radiation source apparatus is arranged such that the intermediate focus IF is located at or near an aperture 221 in the enclosing structure 220.
  • the virtual source point IF is an image of the radiation emitting plasma 210.
  • the radiation traverses the illumination system IL, which in this example includes a facetted field mirror device 22 and a facetted pupil mirror device 24. These devices form a so-called "fly's eye” illuminator, which is arranged to provide a desired angular distribution of the radiation beam 21, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • a patterned beam 26 is formed and the patterned beam 26 is imaged by the projection system PS via reflective elements 28, 30 onto a substrate W held by the wafer stage or substrate table WT.
  • pulses of radiation are generated on substrate table WT and masked table MT perform synchronized movements 266, 268 to scan the pattern on patterning device MA through the slit of illumination.
  • laser energy source comprising laser 223 is arranged to deposit laser energy 224 into a fuel, such as xenon (Xe), tin (Sn) or lithium (Li), creating the highly ionized plasma 210 with electron temperatures of several 10' s of eV.
  • a fuel such as xenon (Xe), tin (Sn) or lithium (Li)
  • Xe xenon
  • Sn tin
  • Li lithium
  • the energetic radiation generated during de-excitation and recombination of these ions is emitted from the plasma, collected by a near- normal incidence collector CO and focused on the aperture 221.
  • the plasma 210 and the aperture 221 are located at first and second focal points of the collector CO, respectively.
  • a droplet generator To deliver the fuel, which for example is liquid tin, a droplet generator
  • laser energy 224 is delivered in a synchronism with the operation of droplet generator 226, to deliver impulses of radiation to turn each fuel droplet into a plasma 210.
  • the frequency of delivery of droplets may be several kilohertz, for example 50 kHz.
  • laser energy 224 is delivered in at least two pulses: a pre pulse with limited energy is delivered to the droplet before it reaches the plasma location, in order to vaporize the fuel material into a small cloud, and then a main pulse of laser energy 224 is delivered to the cloud at the desired location, to generate the plasma 210.
  • a trap 230 is provided on the opposite side of the enclosing structure 220, to capture fuel that is not, for whatever reason, turned into plasma.
  • reference axes X, Y and Z may be defined for measuring and describing the geometry and behavior of the apparatus, its various components, and the radiation beams 20, 21, 26.
  • a local reference frame of X, Y and Z axes may be defined.
  • the Z axis broadly coincides with the direction optical axis O at a given point in the system, and is generally normal to the plane of a patterning device (reticle) MA and normal to the plane of substrate W.
  • the X axis coincides broadly with the direction of fuel stream 228, while the Y axis is orthogonal to that, pointing out of the page as indicated in Figure 2.
  • the X axis is generally transverse to a scanning direction aligned with the Y axis.
  • the X axis points out of the page, again as marked.
  • Figures 3 and 4 illustrate a prior art arrangement for preventing deposits of fuel material damaging or impairing the performance of a collector. It shows a collector CO, a plasma 210 and an ion capture apparatus. At two opposing points on the periphery of the collector there are disposed respective ion catchers 300, being part of the ion capture apparatus. To accelerate the ions 310 towards the ion catchers 300, the ion capture apparatus includes magnetic coils 320 arranged to produce a magnetic field (illustrated by lines of flux 330) in the region of the plasma 210 and the ion catchers 300.
  • One problem with this arrangement of the ion capture apparatus is that it features a large gradient in the magnetic field strength when moving from the plasma 210 location (where the field strength may, for example, be 0.6T) to the catcher 300 position (where the field strength may, for example, be LOT).
  • the field strength may, for example, be 0.6T
  • the catcher 300 position where the field strength may, for example, be LOT.
  • LPP laser produced plasma
  • Figure 5 shows an ion capture apparatus according to an aspect of the invention, including a magnet configuration for an LPP EUV source that addresses these drawbacks of arrangements depicted in Figures 3 and 4. Again, it shows collector CO and plasma 210.
  • the chamber wall 340 which may be a portion of the enclosure 220, are magnetic coils 320.
  • Magnetic field guides or cores 350 extend from the magnetic coils 320 into the chamber and towards plasma 210.
  • Shields 360 are attached to the cores 350.
  • the cores are preferably of solid (i.e., not hollow) cross-section.
  • the end surface 370 of each core, which is facing the plasma, serves as ion catcher.
  • the end surfaces 370 may also be referred to as the ion catch surfaces 370.
  • the magnetic field is largely homogeneous (with a magnetic field strength gradient of less than 0.4T between the location of the plasma 210 and the ion catch surfaces 370, or with a substantially vanishing magnetic field strength gradient) magnetic reflection will not occur or will be substantially absent, facilitating a greatly improved ion collection yield, which may be at or approaching 100%. Additionally, as the catcher surfaces 370 are closer to the plasma compared to the prior art arrangement as shown in Figures 3 and 4, the impact of ion scatter when encountering hydrogen gas molecules will decrease.
  • a cooling function could be included in the core structure to keep its temperature below Curie temperature so as to ensure confinement of the magnetic field during high power operation of the source.
  • a thermal management system such as a fluid-based radiative cooling apparatus, or the like, to accomplish this cooling function would become apparent to persons having ordinary skill in the art.
  • the side of the cores 350 facing the collector CO further includes a shielding feature 360 to avoid direct line of sight from the ion catch surface 370 to the collector CO to mitigate risk of collector contamination by sputtering material present at the ion catch surface 370.
  • This arrangement allows operation of the source vessel at two different pressure regimes of hydrogen gas: a "hot" region with low pressure (for example, less than lOPa), confined to the region between the two ion catch surfaces 370 and a "cold" region of high pressure (for example, 20-100Pa) in front of the collector mirror CO for thermalizing tin neutrals (and any ions not collected by the magnetic field).
  • a "hot" region with low pressure for example, less than lOPa
  • high pressure for example, 20-100Pa
  • a additional advantage over prior art arrangements is that, due to the magnetic field confinement, the magnetic coils may be significantly smaller and therefore the volume claim for the magnet coil structure can be significantly reduced. Also, a smaller magnet coil structure reduces magnetic stray fields in the area around the source. [0049] Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms "wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion,” respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • lens may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un appareil de capture d'ions pour un appareil à source de rayonnement plasma produit par laser (LPP) comportant un générateur de champ magnétique et deux noyaux magnétiques (350). Les deux noyaux magnétiques sont agencés pour canaliser un champ magnétique (330) généré par ledit générateur de champ magnétique, de sorte que le champ magnétique soit sensiblement confiné à une zone à l'intérieur de ladite source de rayonnement plasma produit par laser (LPP), et plus ou moins homogène à l'intérieur de celle-ci. Une réflexion magnétique d'ions est atténuée et un rendement de collecte d'ions en est amélioré.
PCT/EP2013/051880 2012-03-05 2013-01-31 Appareil de capture d'ions, source de rayonnement plasma produit par laser, appareil lithographique WO2013131693A1 (fr)

Applications Claiming Priority (2)

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US201261606688P 2012-03-05 2012-03-05
US61/606,688 2012-03-05

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WO2013131693A1 true WO2013131693A1 (fr) 2013-09-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111108815A (zh) * 2017-09-20 2020-05-05 Asml荷兰有限公司 辐射源

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090132A1 (en) * 2008-09-16 2010-04-15 Akira Endo Extreme ultraviolet light source apparatus
US20100108918A1 (en) * 2008-10-24 2010-05-06 Shinji Nagai Extreme ultraviolet light source apparatus
US20110204249A1 (en) * 2010-02-22 2011-08-25 Shinji Nagai Extreme ultraviolet light generation apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090132A1 (en) * 2008-09-16 2010-04-15 Akira Endo Extreme ultraviolet light source apparatus
US20100108918A1 (en) * 2008-10-24 2010-05-06 Shinji Nagai Extreme ultraviolet light source apparatus
US20110204249A1 (en) * 2010-02-22 2011-08-25 Shinji Nagai Extreme ultraviolet light generation apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111108815A (zh) * 2017-09-20 2020-05-05 Asml荷兰有限公司 辐射源

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