WO2013130064A1 - Memristor with channel region in thermal equilibrium with containing region - Google Patents

Memristor with channel region in thermal equilibrium with containing region Download PDF

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Publication number
WO2013130064A1
WO2013130064A1 PCT/US2012/027101 US2012027101W WO2013130064A1 WO 2013130064 A1 WO2013130064 A1 WO 2013130064A1 US 2012027101 W US2012027101 W US 2012027101W WO 2013130064 A1 WO2013130064 A1 WO 2013130064A1
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WO
WIPO (PCT)
Prior art keywords
region
memristor
channel region
contact
channel
Prior art date
Application number
PCT/US2012/027101
Other languages
French (fr)
Inventor
Feng Miao
Jianhua Yang
John Paul Strachan
Wei Yi
Gilberto Medeiros Ribeiro
R. Stanley Williams
Original Assignee
Hewlett-Packard Development Company, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett-Packard Development Company, L.P. filed Critical Hewlett-Packard Development Company, L.P.
Priority to PCT/US2012/027101 priority Critical patent/WO2013130064A1/en
Priority to CN201280065140.6A priority patent/CN104011863A/en
Priority to KR1020147021056A priority patent/KR20140141574A/en
Priority to US14/371,492 priority patent/US9276204B2/en
Priority to EP12869691.1A priority patent/EP2820677B1/en
Publication of WO2013130064A1 publication Critical patent/WO2013130064A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

Definitions

  • a memristor comprises a conducting channel disposed between two contacts.
  • a large number of memristors may be fabricated in a crossbar configuration.
  • Memristors offer non-volatile and multiple-state data storage. They are stackabie in three dimensions and compatible with CMOS technology.
  • Memristors fabricated of materials such as oxides of tantalum have shown high endurance, in some cases exceeding 10 " on-off cycles.
  • Fig. ⁇ is a perspective view of an example of a memristor with, a channel, regio in. thermal equilibrium with a containing region,
  • Fig. 2 is a sectional view along the line 2-2 of Fig. ⁇ .
  • Fig. 3 is a sectional, view of another example of a memristor with a channel .region in thermal, equilibrium with a containing region.
  • Fig. 4 is a current-voltage (1-V) curve of a memristor with a channel region in thermal equilibrium with a containing region.
  • Fig. 5 is a perspective view of a crossbar configuration of memristors each having a channel region in thermal equilibrium with a containing region
  • FIG. 6 is a perspective view of an example of a memristor with a cylindrical channel region in thermal equilibrium with a containing region.
  • Fig. 7 is a flowchart showing an example of a method of fabricating a memristor wi th a channel region in thermal eqailibrium with a containing region.
  • figs. 1 and 2 show a memristor that includes a channel region 101. having a variable concentration of mobile ions and a containing region of stoichiometric crystalline material 103, containing and in thermal equilibrium with the channel region.
  • the channel region 101 is shown as generally cylindrical in shape, and the containing region 103 is shown as generally rectangular.
  • these shapes are not critical as will he discussed presently.
  • thermodynaraicaily stable means the channel, region and the containing .region -are thermodynaraicaily stable with respect to each other. In other words, they do not react with each other chemically even at elevated temperatures.
  • the channel region may be fon.ned of an material that works as a conducting channel in a memristor system.
  • the channel region may comprise a core and a gradient region.
  • the channel region comprises a bistable metal-oxide solid solution and an amorphous oxide phase.
  • the containing region may consist of any insulating phase that is in thermal equilibrium with the channel region.
  • the channel region 101 comprises a metal-oxide s l d solution of Ta(O) and an amorphous oxide TaO s
  • the containing region comprises stoichiometric crystalline ⁇ 1 ⁇ 2 ⁇ 5.
  • Other material systems may be used.
  • An example of a memristor fabricated, of hafnium includes a channel region of a metai-oxide solid solution of Hf(0) and an amorphous oxide MK) K , and, in thermal equilibrium with the channel region, a containing region of stoichiometric crystalline Kh.
  • Fig. 3 shows another example of a memristor with a. conducting region 301 and a containing region 303 surrounding and in thermal equilibrium with the channel region.
  • the memristor is fabricated on a substrate 305.
  • An insulating layer 307 is adjacent the substrate and a first contact 309 is adjacent the insulating layer.
  • a second contact 31 1 is spaced apart from the first contact 309, and the containing region 303 is disposed between the contacts, in some examples an. adhesion layer 1 , which may be thinner than the other components, is disposed between the insulating layer 307 and the first contact 309.
  • the substrate 305 comprises silicon and the insulating layer 30? comprises silicon dioxide.
  • the first contact 309 ma comprise platinum and the second contact 31 i ma comprise tantalum. If a adhesion Saver 313 is used, it may comprise titanium.
  • the memristor is about 1.00 micrometers across.
  • the contacts are each about 100 to 400 nanometers thick, the containing region and channel region are between less than 7 up to about 1.8 nanometers thick, the insulating layer is about 200 nanometers thick, and the adhesion layer (if used) Is about one nanometer thick.
  • Fig. 4 shows a plot of current VS voltage illustrating memristor action, for example action of a memristor with a channel region and a containing region in thermal equilibrium with the channel region.
  • Fig. 5 shows an example of a crossbar ernristor structure in. which, a plurality of first contacts 501 are spaced apart from and generally parallel with each other, and a plurality of second contacts 503 are spaced apart from and generally parallel with each other, The second contacts overly the first contacts, generally at right angles.
  • Memristors with containing regions 505 -surrounding channel regions 50? are formed at intersections between the first and second contacts - that is, at points where one of the second contacts crosses over one of the first contacts.
  • An individual menmstor located at such an intersection may be accessed by applying appropriate control voltages or currents to those contacts that define the intersection.
  • Fig. 6 shows an. example having a containing region 601 surrounding a cylindrical channel region 603.
  • the cylindrical channel region 603 has a hollow interior 605 , Other shapes of the containing region, the channel, region, or both, may be used a convenient,
  • FIG. 7 A example of a method of fabricating a memristor having a channel region in thermal equilibrium with a containing region is shown in Fig. 7.
  • the method includes depositing ⁇ 701 ⁇ a first contact on a support structure, depositing (703) a. containing region on the first contact, depositing (705) a second contact on the containing region, and forming (707) a channel region between the contacts and in thermal equilibrium with the containing region.
  • forming the channel region comprises impressing an electric potential across the contacts to create an electric field through the containing region.
  • forming the channel region comprises exposing the containing region to an electron beam or an ionized beam, or vacuum annealing the containing region, or subtract roughness engineering.
  • forming the channel region comprises implanting an impurity (a channel seed) in the containing region,
  • Memristors with channel regions protected by containing regions with which they are in thermal equilibrium offer improved scalability, endurance, and controllability. Such memristors will better realize the potential of vastly improved memory systems compared with existing memories fabricated with other technologies.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Micromachines (AREA)
  • Semiconductor Memories (AREA)

Abstract

A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.

Description

HP Record 10 82828135
Memristor wi h
Background
[001] Current memory technologies such as DRAM (dynamic random access memory), SRAM (static RAM), and HAND flash are approaching their scalability limits. There is a growing need for new memory technologies that can meet increasing performance requirements of future memory applications, Memristor technology has the potential to satisfy this need, Memristors rely on drift of mobile charges upon, application of an electric field. A memristor comprises a conducting channel disposed between two contacts. A large number of memristors may be fabricated in a crossbar configuration. Memristors offer non-volatile and multiple-state data storage. They are stackabie in three dimensions and compatible with CMOS technology.
Memristors fabricated of materials such as oxides of tantalum have shown high endurance, in some cases exceeding 10 " on-off cycles.
Brief Description of the Drawings
[002] The figures are not drawn to scale. They illustrate the disclosure by examples.
[003] Fig. ί is a perspective view of an example of a memristor with, a channel, regio in. thermal equilibrium with a containing region,
[004] Fig. 2 is a sectional view along the line 2-2 of Fig. ί .
[005] Fig. 3 is a sectional, view of another example of a memristor with a channel .region in thermal, equilibrium with a containing region.
[006] Fig. 4 is a current-voltage (1-V) curve of a memristor with a channel region in thermal equilibrium with a containing region.
[007] Fig. 5 is a perspective view of a crossbar configuration of memristors each having a channel region in thermal equilibrium with a containing region,
[008 j Fig. 6 is a perspective view of an example of a memristor with a cylindrical channel region in thermal equilibrium with a containing region. HP Record 10 82828135
[009] Fig. 7 is a flowchart showing an example of a method of fabricating a memristor wi th a channel region in thermal eqailibrium with a containing region.
Detailed Description
[010] Illustrative examples and. details are used in the drawings and in this description, but other configurations may exist and may suggest themselves. Parameters such as voltages, temperatures, dimensions, and component values are approximate. Terms of orientation such as up, down, top. and bottom are used only for convenience to indicate spatial relationships of components with respect to each other, and except as otherwise indicated, orientation with respect to external axes is not critical. For clarity, some known methods and structures have not been described in detail Methods defined by the claims may comprise steps in addition to those listed, and except as indicated in the claims themselves the steps may be performed in another order than that given. Accordingly, the only limitations are imposed by the claims, not by the drawings of this description,
[01 1 ] Memristor fabrication has suffered from relatively low yields and great variability at small dimensions. This has adversely impacted scalability and controllability of fabrication of these devices.
[012] figs. 1 and 2 show a memristor that includes a channel region 101. having a variable concentration of mobile ions and a containing region of stoichiometric crystalline material 103, containing and in thermal equilibrium with the channel region., in this example the channel region 101 is shown as generally cylindrical in shape, and the containing region 103 is shown as generally rectangular. However, these shapes are not critical as will he discussed presently.
[013] "Thermal, equilibrium" means the channel, region and the containing .region -are thermodynaraicaily stable with respect to each other. In other words, they do not react with each other chemically even at elevated temperatures.
[014] The channel region ma be fon.ned of an material that works as a conducting channel in a memristor system. The channel region may comprise a core and a gradient region. In some examples the channel region comprises a bistable metal-oxide solid solution and an amorphous oxide phase. HP Record 10 82828135
[015] The containing region may consist of any insulating phase that is in thermal equilibrium with the channel region.
[016] in an example of a memristor comprising tantalum, the channel region 101 comprises a metal-oxide s l d solution of Ta(O) and an amorphous oxide TaOs, and the containing region comprises stoichiometric crystalline Ί½θ5. Other material systems may be used. An example of a memristor fabricated, of hafnium includes a channel region of a metai-oxide solid solution of Hf(0) and an amorphous oxide MK)K, and, in thermal equilibrium with the channel region, a containing region of stoichiometric crystalline Kh.
[017] Fig. 3 shows another example of a memristor with a. conducting region 301 and a containing region 303 surrounding and in thermal equilibrium with the channel region. The memristor is fabricated on a substrate 305. An insulating layer 307 is adjacent the substrate and a first contact 309 is adjacent the insulating layer. A second contact 31 1 is spaced apart from the first contact 309, and the containing region 303 is disposed between the contacts, in some examples an. adhesion layer 1 , which may be thinner than the other components, is disposed between the insulating layer 307 and the first contact 309.
[018] In some examples the substrate 305 comprises silicon and the insulating layer 30? comprises silicon dioxide. The first contact 309 ma comprise platinum and the second contact 31 i ma comprise tantalum. If a adhesion Saver 313 is used, it may comprise titanium.
[01 ] Dimensions are not critical and may be selected as appropriate for a device under fabrication. In one example the memristor is about 1.00 micrometers across. The contacts are each about 100 to 400 nanometers thick, the containing region and channel region are between less than 7 up to about 1.8 nanometers thick, the insulating layer is about 200 nanometers thick, and the adhesion layer (if used) Is about one nanometer thick.
[020] Fig. 4 shows a plot of current VS voltage illustrating memristor action, for example action of a memristor with a channel region and a containing region in thermal equilibrium with the channel region. HP Record 10 82828135
[021 ] Fig. 5 shows an example of a crossbar ernristor structure in. which, a plurality of first contacts 501 are spaced apart from and generally parallel with each other, and a plurality of second contacts 503 are spaced apart from and generally parallel with each other, The second contacts overly the first contacts, generally at right angles. Memristors with containing regions 505 -surrounding channel regions 50? are formed at intersections between the first and second contacts - that is, at points where one of the second contacts crosses over one of the first contacts. An individual menmstor located at such an intersection may be accessed by applying appropriate control voltages or currents to those contacts that define the intersection.
[022] As noted above, the shapes of die example depicted in the drawings are not critical. The containing region need not be rectangular, and the channel region need, not be circular. Fig. 6 shows an. example having a containing region 601 surrounding a cylindrical channel region 603. The cylindrical channel region 603 has a hollow interior 605 , Other shapes of the containing region, the channel, region, or both, may be used a convenient,
[023] A example of a method of fabricating a memristor having a channel region in thermal equilibrium with a containing region is shown in Fig. 7. The method includes depositing {701 } a first contact on a support structure, depositing (703) a. containing region on the first contact, depositing (705) a second contact on the containing region, and forming (707) a channel region between the contacts and in thermal equilibrium with the containing region. In some examples forming the channel region comprises impressing an electric potential across the contacts to create an electric field through the containing region. In other examples forming the channel region comprises exposing the containing region to an electron beam or an ionized beam, or vacuum annealing the containing region, or subtract roughness engineering. In some examples forming the channel region comprises implanting an impurity (a channel seed) in the containing region,
[024] Memristors with channel regions protected by containing regions with which they are in thermal equilibrium offer improved scalability, endurance, and controllability. Such memristors will better realize the potential of vastly improved memory systems compared with existing memories fabricated with other technologies.

Claims

HP Record 10 82828135
Claims
We claim:
1. A memristor with a channel region in thermal equilibrium with a containin region, the memristor comprising:
a -channel region having a variable concentration of mobile ions; and
a containing region of stoichiometric crystalline material containing and in thermal equilibrium with the channel region.
2. The memristor o f claim 1 wherein the channel region comprises a core and a gradieni region.
3. The menirisior of claim 2 wherein the channel region compri ses a bistable metal-oxide solid solution and an amorphous oxide phase,
4. The memristor of claim 3 wherein the channel region comprises Ta(0) and TaO* and the containing region comprises TajOs,
5. The memristor. of claim 3 wherein the channel regio comprises Hf(0) and MtX)x and. the containing region comprises HtX>2,
6. A memristor with a channel region in thermal equilibrium with a containing region, the memristor comprising:
a substrate;
an insulating layer adjacent the substrate;
a first contact adjacent the insulating layer;
a second contact spaced apart from the first contact;
a containing region disposed between the contacts; and
a channel region surrounded by the containing region, the first contact, and the second contact, the channel region having a variable concentration of mobile ions and in thermal equilibrium with the containing region. HP Record 10 82828135
7. The memristor of claim 6 wherein the channel region comprises a core and a gradient region.
8. The memristor of claim 7 wherein the channel region comprises a metal-oxide solid solution and an amorphous oxide phase.
9. The memristor of claim 8 wherein the channel region comprises Ta(D) and TaOs and the containing region comprises Ta2 ¾.
9. The memristor of claim 9 wherein the channel region compri ses Hf(0) and Hi¾ and the containing region comprises HfC .
1 1 . The memristor of claim 6 and further comprising an adhesion layer between the insulating layer and the fi st contact.
12. A method of fabricating a memristor, the method comprising:
depositing a first contact on a support structure;
depositing a containing region on the first contact;
depositing a second contact on the containing region; and
foroiing a. channel region between the contacts and in thermal equilibrium with the containing region.
13. The method of claim .12 wherein forming the channel region comprises impressing an electric potential across the contacts to create an electric field through the containing region.
14. The method of claim 12 wherein forming the channel region comprises exposing the containing region to one of an ionized beam and an electron beam.
15. The method of claim 12 wherein forming the channel region comprises vacuum annealing the containing region.
PCT/US2012/027101 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region WO2013130064A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/US2012/027101 WO2013130064A1 (en) 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region
CN201280065140.6A CN104011863A (en) 2012-02-29 2012-02-29 Memristor With Channel Region In Thermal Equilibrium With Containing Region
KR1020147021056A KR20140141574A (en) 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region
US14/371,492 US9276204B2 (en) 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region
EP12869691.1A EP2820677B1 (en) 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region

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PCT/US2012/027101 WO2013130064A1 (en) 2012-02-29 2012-02-29 Memristor with channel region in thermal equilibrium with containing region

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EP (1) EP2820677B1 (en)
KR (1) KR20140141574A (en)
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WO (1) WO2013130064A1 (en)

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KR20160130468A (en) * 2014-03-07 2016-11-11 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 Memristor devices with a thermally-insulating cladding

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100243983A1 (en) * 2009-03-31 2010-09-30 Tony Chiang Controlled localized defect paths for resistive memories
US20110017977A1 (en) * 2009-07-24 2011-01-27 Bratkovski Alexandre M Memristors with insulation elements and methods for fabricating the same
WO2011016794A2 (en) * 2009-07-28 2011-02-10 Hewlett-Packard Development Company, L.P. Memristors with asymmetric electrodes
US20110227022A1 (en) * 2009-01-15 2011-09-22 Cho Hans S Memristor Having a Nanostructure Forming An Active Region
US20110309321A1 (en) 2010-06-21 2011-12-22 Jianhua Yang Memristors with a switching layer comprising a composite of multiple phases

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515181A (en) 2004-09-27 2008-05-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Electrical device having nanowires with phase change material
US7791059B2 (en) 2006-03-24 2010-09-07 Nxp B.V. Electric device with phase change resistor
US7932548B2 (en) * 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
JP5050813B2 (en) * 2007-11-29 2012-10-17 ソニー株式会社 Memory cell
US7812335B2 (en) 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
KR20100032572A (en) 2008-09-18 2010-03-26 주식회사 하이닉스반도체 Resistive memory device and method for manufacturing the same
WO2010064444A1 (en) * 2008-12-05 2010-06-10 パナソニック株式会社 Nonvolatile memory element and manufacturing method therefor
CN102648528B (en) * 2009-06-25 2016-02-17 惠普开发有限公司 Have with different switching threshold intrinsic diode can switch junctions
JP4688979B2 (en) * 2009-07-13 2011-05-25 パナソニック株式会社 Resistance change element and resistance change memory device
US8581225B2 (en) * 2010-04-28 2013-11-12 Panasonic Corporation Variable resistance nonvolatile memory device and method of manufacturing the same
CN103733338B (en) * 2011-06-24 2016-10-26 慧与发展有限责任合伙企业 High reliability high speed memristor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110227022A1 (en) * 2009-01-15 2011-09-22 Cho Hans S Memristor Having a Nanostructure Forming An Active Region
US20100243983A1 (en) * 2009-03-31 2010-09-30 Tony Chiang Controlled localized defect paths for resistive memories
US20110017977A1 (en) * 2009-07-24 2011-01-27 Bratkovski Alexandre M Memristors with insulation elements and methods for fabricating the same
WO2011016794A2 (en) * 2009-07-28 2011-02-10 Hewlett-Packard Development Company, L.P. Memristors with asymmetric electrodes
US20110309321A1 (en) 2010-06-21 2011-12-22 Jianhua Yang Memristors with a switching layer comprising a composite of multiple phases

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ONKARAIAH S. ET AL.: "Using OxRRAM memories for improving communications of reconfigurable FPGA architectures", NANOSCALE ARCHITECTURES (NANOARCH), 2011 IE EE/ACM INTERNATIONAL SYMPOSIUM, 8 June 2011 (2011-06-08), pages 65 - 69, XP032031366 *
See also references of EP2820677A4

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KR20140141574A (en) 2014-12-10
EP2820677A1 (en) 2015-01-07
EP2820677B1 (en) 2017-04-05
US20140346426A1 (en) 2014-11-27
EP2820677A4 (en) 2015-09-30
US9276204B2 (en) 2016-03-01
CN104011863A (en) 2014-08-27

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