WO2013105327A1 - Stamper, imprinting device and processed product, as well as processed product manufacturing device and processed product manufacturing method - Google Patents

Stamper, imprinting device and processed product, as well as processed product manufacturing device and processed product manufacturing method Download PDF

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Publication number
WO2013105327A1
WO2013105327A1 PCT/JP2012/078246 JP2012078246W WO2013105327A1 WO 2013105327 A1 WO2013105327 A1 WO 2013105327A1 JP 2012078246 W JP2012078246 W JP 2012078246W WO 2013105327 A1 WO2013105327 A1 WO 2013105327A1
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WIPO (PCT)
Prior art keywords
pattern
stamper
processed product
drain structure
molding material
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PCT/JP2012/078246
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French (fr)
Japanese (ja)
Inventor
哲宏 鳩飼
恭一 森
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株式会社日立ハイテクノロジーズ
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Publication of WO2013105327A1 publication Critical patent/WO2013105327A1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves

Definitions

  • the present invention relates to a stamper, an imprint apparatus, a processed product, a processed product manufacturing apparatus, and a processed product manufacturing method using an imprint technique, and in particular, a stamper, an imprint apparatus, a processed product, a processed product manufacturing apparatus, and a process that can form a pattern with high accuracy. It relates to a product manufacturing method.
  • hard disk drives are used not only for servers and computers, but also for use in various applications such as home hard disk recorders, car navigation systems, portable AV playback devices, etc. It tends to increase with the digitization of applications.
  • Increasing the capacity means increasing the recording density of the media disc.
  • One technique for increasing the recording density of media disks is patterned media. As shown in FIG. 2, there are two types of patterned media: discrete track media and bit patterned media.
  • Discrete track media (DTM) is a method of forming concentric track patterns 14 on a media disc 1.
  • Bit patterned media is a method of forming an infinite number of bit patterns 16 as shown on the right side of the figure.
  • FIG. 3 shows the nanoimprint technology.
  • a quartz stamper 20J that transmits light is pressed and imprinted on a resist (resin) P applied to the surface of a processed product base 12 such as a disk substrate on which a magnetic film is formed, thereby forming an etch mask 15.
  • Step 1 an etching process is performed with the plasma gas 17, and the base film BM formed between the stamper 20J and the processed product base material is removed by an excess resin, and a final etch mask 15 is formed (step 2).
  • etching (etching) is performed with the plasma gas 17 using the etch mask 15 as a mask (step 3), and a predetermined pattern is completed (step 4).
  • Patent Document 1 discloses such a nanoimprint technique. In step 2, it is not necessary to carry out the process when the base film thickness is thin.
  • the pattern is uniformly arranged as in the photonic crystal pattern for the purpose of increasing the brightness of the LED product shown in FIG. 4 and there is no uneven distribution or uneven duty ratio in the fine pattern to be formed, use a molding material. This can be solved by applying a certain resist (resin) uniformly.
  • the thickness BMt of the base film BM can vary (step 1).
  • the amount of resist necessary for forming the pattern increases and the thickness of the base film BM decreases.
  • the required resist amount is reduced and the thickness of the base film BM is increased.
  • step 2 In the base film removal process in step 2, in order to remove all the base film BM by the etching process with the plasma gas 17, it is removed with the maximum base film thickness (step 2). As a result, the process time becomes longer. As the process time increases, the throughput decreases first. Second, overetching occurs and the height and width of each pattern is reduced as shown in step 3.
  • a first object of the present invention is to provide a stamper or imprint apparatus that can reduce variations in base film thickness.
  • a second object of the present invention is to provide a processed product manufacturing apparatus or a processed product manufacturing method capable of forming a processed product having a precise fine pattern or a precise fine pattern.
  • the present invention has at least the following features.
  • the present invention provides a stamper that has a concavo-convex pattern on the surface and transfers the concavo-convex pattern to the molding material that is provided on the surface of the treated product base material that has been applied.
  • the stamper has, as the pattern, a regular pattern that functions as a processed product, and a stamper drain structure that absorbs a surplus molding material that is not necessary for transferring the regular pattern among the molding material.
  • the first feature is that the volume of the stamper drain structure is larger than the amount of the excess molding material.
  • the present invention provides a stamper that has a concavo-convex pattern on the surface and transfers the concavo-convex pattern to the molding material on the surface of the treated product substrate having the applied molding material.
  • the drain structure is provided or provided at a position different from the regular pattern on the surface. And features.
  • a third feature of the present invention is that the drain structure is a pattern provided at a position provided or separated from a regular pattern that functions as the processing product.
  • the fourth feature of the present invention is that the drain structure is a pattern in which a regular pattern that functions as the processed product is enlarged in a plane.
  • the fifth feature of the present invention is that the drain structure has a space in which a surplus molding material can flow.
  • the present invention is the magnetic disk in which the processed product has a regular pattern area of servo patterns and data concentrically on a donut-shaped disk, and the transfer is performed in addition to the normal pattern that functions as the processed product.
  • a sixth feature is that the provided drain structure is transferred to the inner and outer regions of the donut-shaped disk or the regular pattern region of the magnetic disk.
  • the processing product may be an electronic device having a function such as an analog circuit or a digital circuit, and the transfer device may include the drain structure provided in addition to a regular pattern that functions as the processing product.
  • the seventh feature is that the image is transferred to the filter portion of the.
  • the present invention is directed to the SAW device in which the processing product is an electron having a function such as an analog circuit or a digital circuit, and the transfer is configured to planarly expand a regular pattern that functions as the processing product. It is an eighth feature that the image is transferred to at least one of the electrode portion and the ground portion.
  • the imprint apparatus 1 is roughly divided into a transfer mechanism upper part 60 and a light source 30 having components above the resist P which is a molding material of the stamper, a transfer mechanism lower part 70 having components below the resist P, a stage 80, Have As the resist P, any of a photocurable resin, a thermosetting resin, and a thermoplastic material can be used.
  • the transfer mechanism upper part 60 holds the stamper 20 on a flat surface.
  • the light source 30 is a UV light source serving as an energy source for curing the resin of the photocurable resin.
  • the thermosetting resin can also be cured.
  • the imprint apparatus 1 of this embodiment is also provided with the light source 30, it is good also considering the light source 30 as another apparatus.
  • the transfer mechanism lower portion 70 has a resist P to which the unevenness of the stamper 20 is transferred on the surface, and holds the processed product base material 12 which finally becomes a processed product.
  • the stage 80 is a base on which the processed product base material 12 is placed.
  • the stamper 20 transfers to the resist P, the stamper receives the pressing of the stamper, so that the resist P has an intended shape on the processed product base 12.
  • a heat source 90 is provided inside the stage 80 for heating and softening the resist P when it is transferred to the resist P made of a thermoplastic material.
  • the pattern of the stamper 20 is transferred to the resist P by such an imprint apparatus 1 to form an etch mask, and then an etching process is performed by an etching apparatus.
  • the imprint apparatus 1 may include an exposure apparatus.
  • the imprint apparatus 1 may be provided with the transfer mechanism lower portion 70 above the resist P and the transfer mechanism upper portion 60 and the light source 30 below the resist P contrary to the above structure.
  • the above structure is tilted 90 degrees to the right or left
  • the transfer mechanism upper portion 60 and the light source 30 are provided on the right (left) side of the resist P
  • the transfer mechanism lower portion 70 is provided on the left (right) side of the resist P. It may be.
  • the pressing direction of the stamper 20 is not limited to the vertical direction or the horizontal direction but may be a direction inclined at an arbitrary angle. Since the resist material has a thin coating thickness, the fluidity is lowered, and even if the resist material is tilted and pressed, the resist material does not flow out or a portion that cannot be transferred is generated.
  • the feature of the present invention is that the base film thickness of the regular pattern is made uniform by absorbing (discharging) the surplus resist in the molding surface that molds the regular pattern necessary to fulfill the function into the drain structure. It is.
  • a pattern having a dummy portion for forming a regular pattern is referred to as a drain structure.
  • a stamper drain structure provided in the stamper 20 is denoted by 20P.
  • the drain structure of the resist P formed on the etch mask 15 with the drain structure 20P is denoted by DP.
  • Embodiment 1 A drain structure is provided in addition to a regular pattern. In this case, the drain structure remains at a position separated from the regular pattern in the processed product.
  • Embodiment 2 A drain structure for enlarging a regular pattern in a plane is provided. In this case, the drain structure also remains in the processed product in a state where the regular pattern is enlarged in a plane.
  • the drain structure is installed in a regular pattern embedded in the region or outside.
  • the chip size is reduced, and when arranged outside, the drain structure is used as an outer moat, and when the same device is simultaneously imprinted with one stamper 20, adjacent devices with a resist drain structure Therefore, there is an advantage that the resist flow can be controlled in device units.
  • the drain structure When the stamper is pressed, a space is provided in the drain structure, so that the pressure on the resist surface in the drain structure becomes lower than that of other pattern portions, and the resist flows into the drain structure. That is, the drain structure maintains a flowable state having a space. In order to realize this effectively, the volume of the drain structure needs to be sufficiently larger than the surplus resist.
  • a reinforcing structure can be provided in order to prevent deformation or buckling of the drain structure. Further, the reinforcing structure can be extended to the periphery of the drain structure and used to effectively guide the resist into the drain by its surface tension.
  • the transfer environment changes with each transfer. For example, the deformation of the stamper, the variation of the coating conditions, and the variation of the volatility of the resist material after coating. Therefore, when the transfer condition is set to be extremely thin, a resist shortage occurs and a transfer failure occurs.
  • a large amount of resist is applied in advance, and an excess amount of resist is absorbed into the drain structure for each transfer, so that even if the base film is set thin, it can cope with the transfer environment, Highly reliable transfer can be realized without causing a shortage of resist.
  • FIG. 6 is a diagram illustrating a basic concept of the first embodiment.
  • the right column of FIG. 6 shows a conventional imprint process (hereinafter simply referred to as a conventional process) by the stamper 20j having only a regular pattern necessary for a processed product.
  • the left column of FIG. 6 shows the imprint process of the first embodiment (hereinafter simply referred to as the embodiment or the example process) by the stamper 20 having the drain structure 20P shown in black in addition to the regular pattern shown in white. Since the drain structure 20P has a lower resist filling rate and a space when pressed by the stamper than the normal pattern, the resist surface pressure can be lower than that of the normal pattern to promote the inflow of the resist.
  • step 2 the required amount of resist is different, and the thickness of the base film BM can vary. As a result, the process time becomes longer, the throughput is lowered, and overetching occurs, and the height and width of each pattern are reduced as shown in Step 3.
  • the drain structure DP shown in black is provided in a sparse / dense area where the duty ratio is different from that of the non-pattern area.
  • the drain structure DP shown in black is provided in a sparse / dense area where the duty ratio is different from that of the non-pattern area.
  • the drain structure 20P is provided in the non-pattern region shown in FIG. 5, and the normal pattern base film thickness is made uniform by discharging excess resist of the normal pattern.
  • the size and installation position of the drain structure 20P (distance from the regular pattern (gap)) and the like are determined in consideration of the surplus resist amount and resist fluidity. Basically, the fluidity decreases as the distance increases.
  • FIG. 6 shows one dimension
  • the dimensions are actually determined so that the surplus resist in the two-dimensional imprint plane can be discharged.
  • the resist amount is determined so that the base film thickness BMt is as thin as possible.
  • step 2 the base film is thinned as shown in step 2
  • the removal time of the base film BM is shortened, and the throughput can be improved. If the base film BM can be thinned to a predetermined thickness or less, step 2 can be omitted.
  • the removal time of the base film BM can be shortened, the amount of overetching of the etch mask due to the removal time can be reduced, and the reduction of the height and width of the etch mask 15 can be suppressed, and a highly accurate fine pattern can be formed. it can.
  • drain structure DP formed of the surplus resist does not necessarily have a flat structure as shown in FIG. 6, and may be concave or convex due to the fluidity of the resist or the structure of the drain structure 20P. It becomes. The same applies to the second embodiment.
  • Example 1 is an example in which the first embodiment is applied to a magnetic disk as a processed product, and the example is shown in FIG.
  • FIG. 7 is a diagram showing a conventional magnetic disk 30j.
  • a conventional magnetic disk 30j has a pattern area 31 having a regular pattern 31P having a servo pattern and data concentrically on a donut-shaped disk, and no pattern inside and outside the pattern area 31 as shown in the drawing.
  • non-pattern areas 32 and 33 are non-pattern areas. Therefore, if imprinting is performed with the same resist amount as that of the pattern region 31, the required resist amount of the non-pattern regions 32 and 33 is small, so that the base film thickness increases.
  • drain structure regions 34 and 35 indicated by hatching that prompt the inflow of surplus resist of the regular pattern 31P are provided in the non-pattern regions 32 and 33 shown in FIG. 7.
  • the drain structure DP shown in black is provided over the drain structure regions 34 and 35 through the gap G, and the stamper 20 is provided with the drain structure DP.
  • a drain structure 20P to be formed is provided.
  • the drain structure regions 34 and 35 of the stamper 20P are closed spaces, but they may be open spaces whose outer circumferences are open.
  • the column structure reinforcing structure 20K may be provided in the drain structure regions 34 and 35 of the stamper 20.
  • the drain structure DP (20P) if the inflow of surplus resist of the regular pattern 31P can be sufficiently absorbed, it is not necessary to provide the drain structure DP (20P) in the entire drain structure regions 34 and 35, and the gap A drain structure DP (20P) having a certain width from G may be provided.
  • drain structures DP (20P) having a predetermined width may be provided radially as shown in the drawing (1c) and (2c).
  • the gap G is for clearly distinguishing between the regular pattern 31P and the drain structure DP in data processing.
  • the data may be distinguished from the normal pattern 31p and the drain structure DP by patterns. In that case, the gap G may not be provided.
  • a drain structure is provided in the non-pattern areas 32 and 33.
  • the first embodiment is used where the fine pattern of the regular pattern 31P having servo patterns and data is unevenly distributed, or the duty ratio is different and can be made dense. You may apply.
  • Example 2 is an example in which the first exemplary embodiment is applied to an electronic device 40 having functions such as an analog circuit and a digital circuit illustrated in FIG. 9 as a processing product.
  • the electronic device 40 includes an electrode part 41, an electronic circuit part 42, a ground part (not shown), and the like.
  • Example 2 is an example in which the first embodiment is applied around the electronic circuit part 42 or the electrode part 41.
  • the electronic circuit unit 42 constitutes a function such as an analog circuit or a digital circuit composed of wiring, for example. There is an area 42 a without a pattern in the periphery of the electronic circuit section 42 and inside the electronic device 40. Therefore, as shown in FIG.
  • the excess resist of the electronic circuit pattern CP and the electrode portion 41 is absorbed by the drain structure DP (20P) that does not adversely affect the device function in the unpatterned region 42a. Further, as shown in FIG. 9C, a drain structure DP (20 ⁇ / b> P) that absorbs surplus resist of the electrode part 41 may be provided outside the electrode part 41.
  • a columnar reinforcing structure 20K is provided in the stamper. An example is shown.
  • FIG. 10 is a diagram illustrating a basic concept of the second embodiment.
  • the electronic device 40 having a function such as an analog circuit or a digital circuit shown in FIG. 9 is a region having a large area that is not functionally changed even if the area is changed like the electrode part 41 apart from the electronic circuit part 42.
  • the drain structure 20P is provided in the stamper 20P and the drain structure DP is formed in the etch mask 15 so that the portion having such a large area can be enlarged to absorb the surplus resist.
  • the right column of FIG. 10 shows a stamper 20J for a processed product having a necessary regular pattern with a large area compared to other patterns of the electrode part 41 or the ground part (not shown) apart from the electronic circuit part 42. Shows the conventional process. In FIG. 10, the fine circuit pattern 45 is highlighted.
  • the stamper 20 of the present embodiment has a width of the regular pattern of the electrode pattern 41 or the ground portion (not shown) instead of the regular pattern of the large area portion of the electrode portion 41 or ground portion (not shown) shown in white in the right column.
  • the stamper 20 has a regular pattern shown in white so as not to hinder the function of the regular pattern on the electrode part 41 and the like having a large area.
  • a drain structure 20P indicated by an enlarged black frame with a drain portion added thereto is formed.
  • surplus resist in the formation of the etch mask 15 is discharged to the drain structure 20P, and as shown in step 1, the thickness of the base film of the regular pattern is made uniform accordingly.
  • the height of the drain structure 20P provided in the stamper 20P is the same as the height of the regular pattern, the height of the drain structure DP formed on the processed product base 12 is lower than the height of the regular pattern. This is because, as described above, the amount of surplus resist in which the volume of the space portion of the drain structure 20P is assumed in order for the transfer environment to change with each transfer or to absorb the surplus resist in the drain structure with some margin. This is because it is necessary to take a larger value.
  • the required width of the drain structure 20P varies depending on the height of the drain structure 20P, and the height and width of the drain structure DP to be formed also vary depending on them.
  • the height and width of the drain structure 20P are determined so that the fluctuation amount of the surplus drain amount is expected and the drain structure DP is lower than the height of the normal pattern. However, generally, a sufficient width is secured to absorb excess resist. In that case, the height of the drain structure DP is lower than the normal pattern. Of course, the height of the drain structure 20P may be increased.
  • the regular pattern may also be used as the drain structure DP.
  • regular patterns such as electrode portions and ground portions are formed in a larger volume than other regular patterns, so that the regular patterns may absorb surplus resist. Or you may make it provide the drain structure made to continue in the part required as a regular pattern in a regular pattern.
  • Step 2 can be omitted if the thickness of the base film BM can be reduced to a predetermined thickness or less. If the removal time of the base film BM can be shortened, the amount of overetching of the etch mask due to the removal time is reduced as shown in step 3, and the reduction in the height and width of the etch mask 15 can be suppressed.
  • Example 3 is an example in which the second exemplary embodiment is applied to an electronic device 40 having functions such as an analog circuit and a digital circuit shown in FIG. 9 as a processing product, and the example is shown in FIG.
  • FIG. 11A shows an example having a drain structure DP (20P) in which the electrode portion 41 is enlarged.
  • FIG. 11 (b) is an example in which a columnar reinforcing structure DK (20K) is further provided in the embodiment of FIG. 11 (a).
  • the shape of the drain structure 20P (DP) is provided so as to absorb the surplus resist amount based on the shape of the electronic circuit portion 42 and the region 42a having no pattern.
  • the height of the drain structure DP to be formed is not necessarily the same as other regular patterns, and has some variation.
  • FIG. 12 is a diagram showing an example of a magnetic disk as an example of a processed product manufacturing apparatus using imprinting.
  • FIG. 12 is a diagram showing a patterning-related magnetic disk manufacturing apparatus 100 related to patterning in the magnetic disk manufacturing line.
  • a device for manufacturing a disk for forming a magnetic layer on a glass substrate and a device for cleaning the surface of the disk are lubricated downstream of the magnetic disk manufacturing apparatus.
  • the magnetic disk manufacturing apparatus 100 includes a resist coating device 51 that spin-coats a resist on the disk surface, a stamping 52 that imprints a pattern on a resist coating surface using a stamper on which patterns such as servo information and data tracks are formed, and a stamping
  • An imprint apparatus 1 including an exposure apparatus 53 that performs exposure in a state; an etching apparatus 54 that forms a groove on a disk surface by dry etching using a resist pattern as a mask; a nonmagnetic layer forming apparatus 55 that embeds a nonmagnetic layer in the groove; A protective film is formed on the disk surface and a protective film forming device 56 is provided.
  • the throughput of the magnetic disk manufacturing apparatus can be improved.
  • a magnetic disk has been described as an example of a processing product.
  • the present invention can be similarly applied to an electronic device having a function such as an analog circuit or a digital circuit and other processing products.
  • the discrete track media has been described.
  • the present invention can be applied to bit patterned media by providing a drain structure formed of bits or changing the height of the bits. is there.

Abstract

The present invention provides a stamper and imprinting device capable of reducing unevenness in base film thickness, a processed product having a highly precise micropattern, and a processed product manufacturing device and a processed product manufacturing method capable of forming a highly precise micropattern. The present invention is a stamper or an imprinting device which performs imprinting using the stamper, a processed product manufacturing device and a processed product manufacturing method for manufacturing a processed product using the imprinting, and a manufactured processed product, wherein the stamper possesses a drain structure which absorbs surplus molding material which has become surplus when performing the function of the processed product which has been formed from a substrate of the processed product.

Description

スタンパ、インプリント装置及び処理製品並びに処理製品製造装置及び処理製品製造方法Stamper, imprint apparatus, processed product, processed product manufacturing apparatus, and processed product manufacturing method
　本発明は、インプリント技術によるスタンパ、インプリント装置及び処理製品並びに処理製品製造装置及び処理製品製造方法に係わり、特に精度よくパターン形状できるスタンパ、インプリント装置及び処理製品並びに処理製品製造装置及び処理製品製造方法に関する。 The present invention relates to a stamper, an imprint apparatus, a processed product, a processed product manufacturing apparatus, and a processed product manufacturing method using an imprint technique, and in particular, a stamper, an imprint apparatus, a processed product, a processed product manufacturing apparatus, and a process that can form a pattern with high accuracy. It relates to a product manufacturing method.
　近年、ハードディスクドライブや高周波デバイス等のＬＳＩ(Large Scale Integration)にパターンドメディアを用いて製造することが将来期待されている。例えば、ハードディスクドライブでは、サーバやコンピュータ向けの利用が増大するだけでなく、家庭用ハードディスクレコーダやカーナビゲーション、ポータブルＡＶ再生機器等様々な用途への利用が拡大しており、またその容量も種々の用途のデジタル化に伴い増大する傾向にある。 In recent years, it is expected to be manufactured in the future using patterned media for LSI (Large Scale Integration) such as hard disk drives and high frequency devices. For example, hard disk drives are used not only for servers and computers, but also for use in various applications such as home hard disk recorders, car navigation systems, portable AV playback devices, etc. It tends to increase with the digitization of applications.
　容量を増大することは、すなわちメディアディスクの記録密度を増大させることである。メディアディスクの記録密度を増大させる技術の一つがパターンドメディアである。パターンドメディアには、図２に示すように、ディスクリートトラックメディアとビットパターンドメディアの２つがある。ディスクリートトラックメディア（ＤＴＭ）とは、メディアディスク１上に同心円状のトラックパターン１４を形成する方式である。ビットパターンドメディアとは、同図右に示すように無数のビットパターン１６を形成する方式である。 • Increasing the capacity means increasing the recording density of the media disc. One technique for increasing the recording density of media disks is patterned media. As shown in FIG. 2, there are two types of patterned media: discrete track media and bit patterned media. Discrete track media (DTM) is a method of forming concentric track patterns 14 on a media disc 1. Bit patterned media is a method of forming an infinite number of bit patterns 16 as shown on the right side of the figure.
　パターンの形成には、ナノインプリント技術を用いる方法が有力視されている。図３にナノインプリント技術を示す。まず、光を透過する例えば石英製のスタンパ２０Ｊを、磁性膜を形成したディスク基板などの処理製品基材１２の表面に塗布したレジスト(樹脂)Ｐに押し当てインプリントし、エッチマスク１５を形成する(ステップ１)。そして、プラズマガス１７でエッチング処理し、余剰樹脂によってスタンパ２０Jと処理製品基材の間にできるベース膜ＢＭを除去し、最終的なエッチマスク１５を形成する(ステップ２)。次にエッチマスク１５をマスクとしてプラズマガス１７によってエッチング（エッチ）加工し(ステップ３)、所定のパターンを完成させる(ステップ４)。特許文献１は、このようなナノインプリント技術を開示している。なお、ステップ２において、ベース膜厚が薄い場合は実施する必要がない。 A method using nanoimprint technology is considered promising for pattern formation. FIG. 3 shows the nanoimprint technology. First, a quartz stamper 20J that transmits light is pressed and imprinted on a resist (resin) P applied to the surface of a processed product base 12 such as a disk substrate on which a magnetic film is formed, thereby forming an etch mask 15. (Step 1). Then, an etching process is performed with the plasma gas 17, and the base film BM formed between the stamper 20J and the processed product base material is removed by an excess resin, and a final etch mask 15 is formed (step 2). Next, etching (etching) is performed with the plasma gas 17 using the etch mask 15 as a mask (step 3), and a predetermined pattern is completed (step 4). Patent Document 1 discloses such a nanoimprint technique. In step 2, it is not necessary to carry out the process when the base film thickness is thin.
特開２００８－１２８４４号公報JP 2008-12844 A
　ナノインプリント技術においては、精度よく微細パターンを形成する必要がある。図４に示すＬＥＤ製品の高輝度化を目的とするフォトニッククリスタルパターンのようにパターンが均一に配置され、形成する微細パターンに偏在や凹凸のデューティ比に相違がない場合には、成形材料であるレジスト(樹脂)を均一に塗布する技術で解決できる。 In the nanoimprint technology, it is necessary to form a fine pattern with high accuracy. If the pattern is uniformly arranged as in the photonic crystal pattern for the purpose of increasing the brightness of the LED product shown in FIG. 4 and there is no uneven distribution or uneven duty ratio in the fine pattern to be formed, use a molding material. This can be solved by applying a certain resist (resin) uniformly.
　しかしながら、図５に示すように、パターンが有ったり無かったりして微細パターンが偏在したり、デューティ比が相違し疎密ができると、エッチマスク１５のパターンを成形するためのレジストの必要量が異なり、ベース膜ＢＭの厚さＢＭｔにバラつきができる(ステップ１)。この場合、パターンがある又はパターンが密の場合、パターンを成形するのに必要なレジスト量が多くなりベース膜ＢＭの膜厚は薄くなる。パターンがない又はパターンが疎の場合、必要なレジスト量が少なくなりベース膜ＢＭの膜厚は厚くなる。 However, as shown in FIG. 5, when there is a pattern or there is no pattern, the fine pattern is unevenly distributed, or when the duty ratio is different and the density can be made dense, the required amount of resist for forming the pattern of the etch mask 15 is reduced. Unlikely, the thickness BMt of the base film BM can vary (step 1). In this case, when there is a pattern or the pattern is dense, the amount of resist necessary for forming the pattern increases and the thickness of the base film BM decreases. When there is no pattern or the pattern is sparse, the required resist amount is reduced and the thickness of the base film BM is increased.
　ステップ２のベース膜除去プロセスでは、プラズマガス１７でエッチ処理によって全てのベース膜ＢＭを除去するために、最大ベース膜厚で除去する(ステップ２)。その結果、プロセス時間が長くなる。プロセス時間が長くなると、第１にスループットが低下する。第２に、オーバエッチになり、ステップ３に示すように各パターンの高さ及び幅が減少する。 In the base film removal process in step 2, in order to remove all the base film BM by the etching process with the plasma gas 17, it is removed with the maximum base film thickness (step 2). As a result, the process time becomes longer. As the process time increases, the throughput decreases first. Second, overetching occurs and the height and width of each pattern is reduced as shown in step 3.
　従って、本発明の第１の目的は、ベース膜厚のバラツキを低減できるスタンパ又はインプリント装置を提供することにある。 Therefore, a first object of the present invention is to provide a stamper or imprint apparatus that can reduce variations in base film thickness.
　また、本発明の第２の目的は、精度のよい微細パターンを有する処理製品或いは精度のよい微細パターンを形成できる処理製品製造装置又は処理製品製造方法を提供することにある。 A second object of the present invention is to provide a processed product manufacturing apparatus or a processed product manufacturing method capable of forming a processed product having a precise fine pattern or a precise fine pattern.
　本発明は、上記目的を達成するために、少なくとも下記の特徴を有する。
  本発明は、表面に凹凸形状のパターンを備え、塗布された成形材料を有する処理製品基材の表面に有する成形材料に前記凹凸形状のパターンを転写するスタンパ、前記スタンパを用いて最終的に処理製品となる処理製品基材の表面に塗布された成形材料に前記パターンを転写するインプリント装置、前記インプリント装置を用いてエッチング処理をして前記処理製品を製造する処理製品製造装置又は処理製品製造方法において、前記スタンパは、前記パターンとして、処理製品として機能を果たす正規パターンと、前記成形材料のうち前記正規パターンを転写するのに必要のない余剰成形材料を吸収するスタンパドレイン構造とを有し、前記スタンパドレイン構造の容積は前記余剰成形材料の量よりも大きいことを第１の特徴とする。 In order to achieve the above object, the present invention has at least the following features.
The present invention provides a stamper that has a concavo-convex pattern on the surface and transfers the concavo-convex pattern to the molding material that is provided on the surface of the treated product base material that has been applied. An imprint apparatus for transferring the pattern to a molding material applied to the surface of a processed product base material to be a product, a processed product manufacturing apparatus or a processed product for manufacturing the processed product by performing an etching process using the imprint apparatus In the manufacturing method, the stamper has, as the pattern, a regular pattern that functions as a processed product, and a stamper drain structure that absorbs a surplus molding material that is not necessary for transferring the regular pattern among the molding material. The first feature is that the volume of the stamper drain structure is larger than the amount of the excess molding material.
　また、本発明は、表面に凹凸形状のパターンを備え、塗布された成形材料を有する処理製品基材の表面に有する成形材料に前記凹凸形状のパターンを転写するスタンパ、前記スタンパを用いて最終的に処理製品となる処理製品基材の表面に塗布された成形材料に前記パターンを転写するインプリント装置、前記インプリント装置を用いてエッチング処理をして前記処理製品を製造する処理製品製造装置又は処理製品製造方法或いは処理製品において、前記パターンとして、処理製品として機能を果たす正規パターンと、前記成形材料のうち前記正規パターンを転写するのに必要のない余剰成形材料を形成されたドレイン構造とを有し、前記ドレイン構造は前記表面に前記正規パターンとは異なった位置に設け又は設けられていることを第２の特徴とする。 In addition, the present invention provides a stamper that has a concavo-convex pattern on the surface and transfers the concavo-convex pattern to the molding material on the surface of the treated product substrate having the applied molding material. An imprint apparatus for transferring the pattern onto a molding material applied to the surface of a processed product base material to be a processed product, a processed product manufacturing apparatus for manufacturing the processed product by performing an etching process using the imprint apparatus, or In a processed product manufacturing method or a processed product, as the pattern, a regular pattern that functions as a processed product, and a drain structure formed with an excess molding material that is not necessary for transferring the regular pattern among the molding material. And the drain structure is provided or provided at a position different from the regular pattern on the surface. And features.
　さらに、前記ドレイン構造は、前記処理製品として機能を果たす正規パターンの他に設けられた又は分離された位置に設けられたパターンことを第３の特徴とする。
  また、本発明は、前記ドレイン構造は、前記処理製品として機能を果たす正規パターンを平面的に拡大するパターンであることを第４の特徴とする。 Furthermore, a third feature of the present invention is that the drain structure is a pattern provided at a position provided or separated from a regular pattern that functions as the processing product.
The fourth feature of the present invention is that the drain structure is a pattern in which a regular pattern that functions as the processed product is enlarged in a plane.
　また、本発明は、前記ドレイン構造は、余剰成形材料が流動可能な状態を維持する空間を有することを第５の特徴とする。 The fifth feature of the present invention is that the drain structure has a space in which a surplus molding material can flow.
　さらに、本発明は、前記処理製品はドーナツ状の円板に同心円状にサーボパターンやデータの正規パターン領域を有する磁気ディスクであって、前記転写は前記処理製品として機能を果たす正規パターンの他に設けられた前記ドレイン構造を前記ドーナツ状の円板の内側及び外側の領域、又は前記磁気ディスクの前記正規パターン領域に転写することを第６の特徴とする。 Furthermore, the present invention is the magnetic disk in which the processed product has a regular pattern area of servo patterns and data concentrically on a donut-shaped disk, and the transfer is performed in addition to the normal pattern that functions as the processed product. A sixth feature is that the provided drain structure is transferred to the inner and outer regions of the donut-shaped disk or the regular pattern region of the magnetic disk.
　また、本発明は、前記処理製品はアナログ回路やデジタル回路といった機能を有する電子デバイスであって、前記転写は前記処理製品として機能を果たす正規パターンの他に設けられた前記ドレイン構造を前記電子デバイスの有するフィルタ部に転写することを第７の特徴とする。 The processing product may be an electronic device having a function such as an analog circuit or a digital circuit, and the transfer device may include the drain structure provided in addition to a regular pattern that functions as the processing product. The seventh feature is that the image is transferred to the filter portion of the.
　さらに、本発明は、前記処理製品はアナログ回路やデジタル回路といった機能を有する電子であって、前記転写は前記処理製品として機能を果たす正規パターンを平面的に拡大する前記ドレイン構造を前記ＳＡＷデバイスの有する電極部、アース部の少なくとも一方に転写することを第８の特徴とする。 Further, the present invention is directed to the SAW device in which the processing product is an electron having a function such as an analog circuit or a digital circuit, and the transfer is configured to planarly expand a regular pattern that functions as the processing product. It is an eighth feature that the image is transferred to at least one of the electrode portion and the ground portion.
　本発明によれば、ベース膜厚のバラツキを低減できるスタンパ又はインプリント装置を提供できる。 According to the present invention, it is possible to provide a stamper or imprint apparatus that can reduce variations in the base film thickness.
　また、本発明によれば、精度のよい微細パターンを有する処理製品或いは処理製品製造装置又は処理製品製造方法を提供できる。 Further, according to the present invention, it is possible to provide a processed product or a processed product manufacturing apparatus or a processed product manufacturing method having an accurate fine pattern.
本発明の実施形態であるインプリント装置の構成を示す図である。It is a figure which shows the structure of the imprint apparatus which is embodiment of this invention. パターンドメディアの一例を示す概略図である。It is the schematic which shows an example of a patterned media. ナノインプリントプロセスを示す工程図である。It is process drawing which shows a nanoimprint process. 微細パターンに偏在や凹凸のデューティ比に相違がないＬＥＤ製品の高輝度化を目的とするフォトニッククリスタルパターンの一例を示す図である。It is a figure which shows an example of the photonic crystal pattern aiming at the high brightness | luminance of LED product with which there is no difference in uneven distribution and uneven | corrugated duty ratio in a fine pattern. 本発明の課題を説明する図である。It is a figure explaining the subject of this invention. 本発明の実施形態１の基本的な考え方を示す図である。It is a figure which shows the basic idea of Embodiment 1 of this invention. 従来の磁気ディスクを示す図である。It is a figure which shows the conventional magnetic disk. 処理製品として磁気ディスクに本発明の実施形態１を適用した実施例１である。It is Example 1 which applied Embodiment 1 of this invention to the magnetic disc as a processing product. 本発明の実施形態１を適用したアナログ回路やデジタル回路といった機能を有する電子デバイスとドレイン構造を示す図である。It is a figure which shows the electronic device and drain structure which have functions, such as an analog circuit and the digital circuit to which Embodiment 1 of this invention is applied. 本発明の実施形態１をアナログ回路やデジタル回路といった機能を有する電子デバイスに適用した実施例２であり、機能構造を拡大してドレイン構造とする例である。It is Example 2 which applied Embodiment 1 of this invention to the electronic device which has functions, such as an analog circuit and a digital circuit, and is an example which expands a functional structure and makes it a drain structure. 処理製品としてアナログ回路やデジタル回路といった機能を有する電子デバイスに本発明の実施形態２を適用した実施例３である。It is Example 3 which applied Embodiment 2 of this invention to the electronic device which has functions, such as an analog circuit and a digital circuit, as a processing product. 本発明の実施形態である磁気ディスク製造装置を示す図である。It is a figure which shows the magnetic disc manufacturing apparatus which is embodiment of this invention.
　以下、本発明の一実施形態を図面を用いて説明する。
まず、図１を用いて本発明の実施形態であるインプリント装置１の構成を説明する。インプリント装置１は、大別して、スタンパの成形材料であるレジストＰより上部に構成要素を持つ転写機構上部６０と光源３０、レジストＰより下部に構成要素を持つ転写機構下部７０、ステージ８０と、を有する。レジストＰは、光硬化性樹脂、熱硬化性樹脂及び熱可塑性材料のいずれも使用することができる。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
First, the configuration of an imprint apparatus 1 according to an embodiment of the present invention will be described with reference to FIG. The imprint apparatus 1 is roughly divided into a transfer mechanism upper part 60 and a light source 30 having components above the resist P which is a molding material of the stamper, a transfer mechanism lower part 70 having components below the resist P, a stage 80, Have As the resist P, any of a photocurable resin, a thermosetting resin, and a thermoplastic material can be used.
　転写機構上部６０は、スタンパ２０を平面に保持する。光源３０は、光硬化性樹脂の樹脂を硬化させるエネルギー源となるＵＶ光源である。また、熱硬化性樹脂用に、熱源となる光源３０を利用すると、熱硬化性樹脂を硬化させることもできる。なお、本実施形態のインプリント装置１は光源３０も備えているが、光源３０を別装置としてもよい。 The transfer mechanism upper part 60 holds the stamper 20 on a flat surface. The light source 30 is a UV light source serving as an energy source for curing the resin of the photocurable resin. In addition, when the light source 30 serving as a heat source is used for the thermosetting resin, the thermosetting resin can also be cured. In addition, although the imprint apparatus 1 of this embodiment is also provided with the light source 30, it is good also considering the light source 30 as another apparatus.
　一方、転写機構下部７０は、表面にスタンパ２０が有する凹凸が転写されるレジストＰを有し、最終的には処理製品となる処理製品基材１２を保持する。 On the other hand, the transfer mechanism lower portion 70 has a resist P to which the unevenness of the stamper 20 is transferred on the surface, and holds the processed product base material 12 which finally becomes a processed product.
　また、ステージ８０は、処理製品基材１２を載せるベースである。スタンパ２０がレジストＰに転写する際に、スタンパの押圧を受け止めるので、処理製品基材１２にレジストＰが意図した形状になる。なお、ステージ８０の内部には、熱可塑性材料のレジストＰに転写する際にレジストＰを加熱して軟化するための熱源９０を備えている。 The stage 80 is a base on which the processed product base material 12 is placed. When the stamper 20 transfers to the resist P, the stamper receives the pressing of the stamper, so that the resist P has an intended shape on the processed product base 12. Note that a heat source 90 is provided inside the stage 80 for heating and softening the resist P when it is transferred to the resist P made of a thermoplastic material.
　このようなインプリント装置１によってスタンパ２０のパターンをレジストＰに転写しエッチマスクを形成し、その後エッチング装置によりエッチング処理を行う。なお、インプリント装置１は、露光装置を備えていても構わない。 The pattern of the stamper 20 is transferred to the resist P by such an imprint apparatus 1 to form an etch mask, and then an etching process is performed by an etching apparatus. The imprint apparatus 1 may include an exposure apparatus.
　また、インプリント装置１は、上記の構造とは逆に、レジストＰより上部に転写機構下部７０を設け、レジストＰより下部に転写機構上部６０と光源３０を設けてもよい。あるいは、上記の構造を９０度右又は左に傾けて、レジストＰの右（左）側に転写機構上部６０と光源３０を設け、レジストＰの左（右）側に転写機構下部７０を設けるようにしてもよい。さらに、スタンパ２０がレジストＰを転写することができれば、スタンパ２０の押圧する方向は垂直方向または水平方向だけでなく、任意の角度に傾いた方向でも構わない。レジスト材料は、塗布厚みが薄いため流動性が低下し、傾けて押圧しても、レジスト材料が流れ出たり、転写できない部分が発生することはない。 Also, the imprint apparatus 1 may be provided with the transfer mechanism lower portion 70 above the resist P and the transfer mechanism upper portion 60 and the light source 30 below the resist P contrary to the above structure. Alternatively, the above structure is tilted 90 degrees to the right or left, the transfer mechanism upper portion 60 and the light source 30 are provided on the right (left) side of the resist P, and the transfer mechanism lower portion 70 is provided on the left (right) side of the resist P. It may be. Further, as long as the stamper 20 can transfer the resist P, the pressing direction of the stamper 20 is not limited to the vertical direction or the horizontal direction but may be a direction inclined at an arbitrary angle. Since the resist material has a thin coating thickness, the fluidity is lowered, and even if the resist material is tilted and pressed, the resist material does not flow out or a portion that cannot be transferred is generated.
　本発明の特徴は、機能を果たすのに必要な正規パターンを成形する成形面内の余剰レジストをドレイン構造に吸収（排出）することにより、正規パターンのベース膜厚が均一になるようにすることである。
  以下の説明では、正規パターンを成形するのにダミー部分を有しているパターンをドレイン構造という。また、スタンパ２０に設けられたスタンパのドレイン構造を２０Ｐで示す。そのドレイン構造２０Ｐでエッチマスク１５上に形成されたレジストＰのドレイン構造をＤＰで示す。 The feature of the present invention is that the base film thickness of the regular pattern is made uniform by absorbing (discharging) the surplus resist in the molding surface that molds the regular pattern necessary to fulfill the function into the drain structure. It is.
In the following description, a pattern having a dummy portion for forming a regular pattern is referred to as a drain structure. A stamper drain structure provided in the stamper 20 is denoted by 20P. The drain structure of the resist P formed on the etch mask 15 with the drain structure 20P is denoted by DP.
　上記を達成する方法には、大別して次の２つの実施形態がある。 The method for achieving the above is roughly divided into the following two embodiments.
　（１）実施形態１：正規パターンの他にドレイン構造を設ける。この場合は、処理製品にはドレイン構造が、正規パターンと分離された位置に残る。 (1) Embodiment 1: A drain structure is provided in addition to a regular pattern. In this case, the drain structure remains at a position separated from the regular pattern in the processed product.
　（２）実施形態２：正規パターンを平面的に拡大するドレイン構造を設ける。この場合は処理製品にもドレイン構造が、正規パターンを平面的に拡大した状態で残る。 (2) Embodiment 2: A drain structure for enlarging a regular pattern in a plane is provided. In this case, the drain structure also remains in the processed product in a state where the regular pattern is enlarged in a plane.
　実施形態１及び２のいずれにおいても、ドレイン構造の設置位置としては、図９に示すように、正規パターンに領域内に埋め込む場合と外側に配置する場合がある。領域内に埋め込む場合は、チップサイズの小型化、外側に配置する場合は、ドレイン構造を外堀として、一台のスタンパ２０で同じデバイスを複数同時にインプリントする場合、レジストのドレイン構造で隣接するデバイスへの流動を防ぐことができるため、レジスト流動をデバイス単位で制御できるという利点がある。 In either of the first and second embodiments, as shown in FIG. 9, there are cases where the drain structure is installed in a regular pattern embedded in the region or outside. When embedding in a region, the chip size is reduced, and when arranged outside, the drain structure is used as an outer moat, and when the same device is simultaneously imprinted with one stamper 20, adjacent devices with a resist drain structure Therefore, there is an advantage that the resist flow can be controlled in device units.
　スタンパ押し付け時に、ドレイン構造に空間を持つことにより、ドレイン構造内のレジスト表面の圧力を他パターン部より低くなり、ドレイン構造へのレジストの流入を促す。即ち、ドレイン構造が空間を持つ流動可能な状態を維持する。これを効果的に実現するためには、ドレイン構造の体積を余剰レジストに比べて十分大きくする必要がある。その際、ドレイン構造の変形や座屈を防止するために、補強構造をもうけることもできる。また、補強構造をドレイン構造の周辺部まで伸ばし、その表面張力によりレジストをドレイン内に効果的に導くために利用することもできる。 When the stamper is pressed, a space is provided in the drain structure, so that the pressure on the resist surface in the drain structure becomes lower than that of other pattern portions, and the resist flows into the drain structure. That is, the drain structure maintains a flowable state having a space. In order to realize this effectively, the volume of the drain structure needs to be sufficiently larger than the surplus resist. At this time, a reinforcing structure can be provided in order to prevent deformation or buckling of the drain structure. Further, the reinforcing structure can be extended to the periphery of the drain structure and used to effectively guide the resist into the drain by its surface tension.
　昨今、転写環境は転写の度に変動することが解ってきた。例えば、スタンパの変形、塗布条件の変動、塗布後のレジスト材の揮発状態の変動である。従って、転写条件をぎりぎりに薄くなるように設定した場合、レジストの不足が生じ、転写不良が起こる。
  本発明では、上記の場合においても、レジスト塗布量を予め多めに塗布し、転写毎に余剰量レジストをドレイン構造に吸収することで、ベース膜を薄く設定しても、転写環境に対応でき、レジストの不足が生じることもなく、信頼性の高い転写を実現できる。 Nowadays, it has been understood that the transfer environment changes with each transfer. For example, the deformation of the stamper, the variation of the coating conditions, and the variation of the volatility of the resist material after coating. Therefore, when the transfer condition is set to be extremely thin, a resist shortage occurs and a transfer failure occurs.
In the present invention, even in the above-described case, a large amount of resist is applied in advance, and an excess amount of resist is absorbed into the drain structure for each transfer, so that even if the base film is set thin, it can cope with the transfer environment, Highly reliable transfer can be realized without causing a shortage of resist.
　（実施形態１）
　図６は、実施形態１の基本的な考え方を示す図である。図６の右側欄は、処理製品に必要な正規パターンのみを有するスタンパ２０ｊによる従来のインプリントプロセス（以下、単に従来プロセスという）を示す。図６の左側欄は、白で示す正規パターンの他に黒で示すドレイン構造２０Ｐを有するスタンパ２０による実施形態１のインプリントプロセス（以下、単に実施形態又実施例プロセスという）を示す。ドレイン構造２０Ｐは、正規パターンよりもスタンパ押し付け時に、レジストの充填率を低くし、空間を持たせているので、正規パターンよりもレジスト表面の圧力を低くしてレジストの流入を促すことができる。 (Embodiment 1)
FIG. 6 is a diagram illustrating a basic concept of the first embodiment. The right column of FIG. 6 shows a conventional imprint process (hereinafter simply referred to as a conventional process) by the stamper 20j having only a regular pattern necessary for a processed product. The left column of FIG. 6 shows the imprint process of the first embodiment (hereinafter simply referred to as the embodiment or the example process) by the stamper 20 having the drain structure 20P shown in black in addition to the regular pattern shown in white. Since the drain structure 20P has a lower resist filling rate and a space when pressed by the stamper than the normal pattern, the resist surface pressure can be lower than that of the normal pattern to promote the inflow of the resist.
　従来プロセスは、図５で説明したように、パターンが有ったり無かったりして微細パターンが偏在したり、デューティ比が相違し疎密ができると、正規パターン間のレジストの流動抵抗が高く流動しない。それ故、ステップ２に示すようにレジストの必要量が異なり、ベース膜ＢＭの厚さにバラつきができる。その結果、プロセス時間が長くなりスループットが低下すると共に、オーバエッチになり、ステップ３に示すように各パターンの高さ及び幅が減少する。 In the conventional process, as described with reference to FIG. 5, if the fine pattern is unevenly distributed due to the presence or absence of the pattern, or if the duty ratio is different and the density is dense, the resist flow resistance between the regular patterns is high and does not flow. . Therefore, as shown in step 2, the required amount of resist is different, and the thickness of the base film BM can vary. As a result, the process time becomes longer, the throughput is lowered, and overetching occurs, and the height and width of each pattern are reduced as shown in Step 3.
　一方、本実施形態プロセスでは、ステップ１に示すように、例えばパターン無し領域とデューティ比相違がある疎密領域に黒で示すドレイン構造ＤＰを設けている。どのようなドレイン構造ＤＰを設けるかは色々考えられる。 On the other hand, in the process of the present embodiment, as shown in Step 1, for example, the drain structure DP shown in black is provided in a sparse / dense area where the duty ratio is different from that of the non-pattern area. There are various possible drain structures DP.
　例えば、図６では、図５に示すパターン無し領域にドレイン構造２０Ｐを設け、正規パターンの余剰レジストが排出することにより、正規パターンのベース膜厚が均一になるようにする。ドレイン構造２０Ｐのサイズ・設置位置（正規パターンとの距離（ギャップ））等は、余剰レジスト量やレジストの流動性を加味して定める。なお、基本的には、距離が長くなる程流動性は低下する。 For example, in FIG. 6, the drain structure 20P is provided in the non-pattern region shown in FIG. 5, and the normal pattern base film thickness is made uniform by discharging excess resist of the normal pattern. The size and installation position of the drain structure 20P (distance from the regular pattern (gap)) and the like are determined in consideration of the surplus resist amount and resist fluidity. Basically, the fluidity decreases as the distance increases.
　図６は一次元で示しているが、実際には二次元的にインプリントする面内の余剰レジストが排出しきれる様に寸法を定める。勿論、ここの領域毎に定めるのではなく、シミュレーション等によってインプリントする面内のレジスト必要量が同一になるように一度に定めてもよい。
  次に、ベース膜厚ＢＭｔが可能な限り薄くなるようにレジスト量を決定する。 Although FIG. 6 shows one dimension, the dimensions are actually determined so that the surplus resist in the two-dimensional imprint plane can be discharged. Of course, it is not determined for each region here, but may be determined at a time so that the required resist amount in the surface to be imprinted is the same by simulation or the like.
Next, the resist amount is determined so that the base film thickness BMt is as thin as possible.
　このようにドレイン構造ＤＰを設けることによって、ステップ２に示すようにベース膜が薄膜化され、ベース膜ＢＭの除去時間が短縮し、スループットの向上を図ることができる。ベース膜ＢＭを所定の厚さ以下に薄膜にできれば、ステップ２を省略すことができる。 By providing the drain structure DP in this manner, the base film is thinned as shown in step 2, the removal time of the base film BM is shortened, and the throughput can be improved. If the base film BM can be thinned to a predetermined thickness or less, step 2 can be omitted.
　また、ベース膜ＢＭの除去時間が短縮できれば、除去時間に起因するエッチマスクのオーバエッチ量が少なくなり、エッチマスク１５の高さ及び幅の減少を抑えることができ、精度のよい微細パターンを形成できる。 Moreover, if the removal time of the base film BM can be shortened, the amount of overetching of the etch mask due to the removal time can be reduced, and the reduction of the height and width of the etch mask 15 can be suppressed, and a highly accurate fine pattern can be formed. it can.
　なお、余剰レジストで形成されるドレイン構造ＤＰは、図６に示すように必ずしも平坦な構造を有するとは限らず、レジストの流動性やドレイン構造２０Ｐの構造などによって凹状になったり、凸状になったりする。このことは、実施形態２でも同様である。 Note that the drain structure DP formed of the surplus resist does not necessarily have a flat structure as shown in FIG. 6, and may be concave or convex due to the fluidity of the resist or the structure of the drain structure 20P. It becomes. The same applies to the second embodiment.
　以上説明した本実施形態１によれば、ベース膜厚のバラツキを低減できるスタンパ又はインプリント装置を提供できる。 According to the first embodiment described above, it is possible to provide a stamper or imprint apparatus that can reduce variations in the base film thickness.
　また、以上説明した本実施形態１によれば、精度のよい微細パターンを有する処理製品或いは精度のよい微細パターンを形成できる処理製品製造装置又は処理製品製造方法を提供できる。 In addition, according to the first embodiment described above, it is possible to provide a processed product manufacturing apparatus or a processed product manufacturing method capable of forming a processed product having an accurate fine pattern or an accurate fine pattern.
　(実施例１）
　実施例１は、処理製品として磁気ディスクに本実施形態１を適用した例であり、その実施例を図８に示す。図７は、従来の磁気ディスク３０ｊを示す図である。
  従来の磁気ディスク３０ｊは、ドーナツ状の円板に同心円状にサーボパターンやデータを有する正規パターン３１Ｐを有するパターン領域３１と、パターン領域３１の内側及び外側には引出し図に示すようにパターンの無いパターン無し領域３２、３３と、を有する。従って、パターン領域３１と同じレジスト量でインプリントすると、パターン無し領域３２、３３のレジスト必要量は少ないので、ベース膜厚が厚くなる。 Example 1
Example 1 is an example in which the first embodiment is applied to a magnetic disk as a processed product, and the example is shown in FIG. FIG. 7 is a diagram showing a conventional magnetic disk 30j.
A conventional magnetic disk 30j has a pattern area 31 having a regular pattern 31P having a servo pattern and data concentrically on a donut-shaped disk, and no pattern inside and outside the pattern area 31 as shown in the drawing. And non-pattern areas 32 and 33. Therefore, if imprinting is performed with the same resist amount as that of the pattern region 31, the required resist amount of the non-pattern regions 32 and 33 is small, so that the base film thickness increases.
　一方、図８に示す実施例１は、図７に示すパターン無し領域３２、３３に正規パターン３１Ｐの余剰レジストの流入を促す斜線で示すドレイン構造領域３４、３５を設ける。本例では、引き出し図（１ａ）、（２ａ）に示すように、ギャップＧを介してドレイン構造領域３４、３５全体に亘って黒で示すドレイン構造ＤＰを設け、スタンパ２０にはドレイン構造ＤＰを形成するドレイン構造２０Ｐを設ける。 On the other hand, in the first embodiment shown in FIG. 8, drain structure regions 34 and 35 indicated by hatching that prompt the inflow of surplus resist of the regular pattern 31P are provided in the non-pattern regions 32 and 33 shown in FIG. 7. In this example, as shown in the drawing (1a) and (2a), the drain structure DP shown in black is provided over the drain structure regions 34 and 35 through the gap G, and the stamper 20 is provided with the drain structure DP. A drain structure 20P to be formed is provided.
　また、実施例１では、スタンパ２０Ｐのドレイン構造領域３４、３５は閉空間としたがそれらの外側円周周囲を開放した開空間としてもよい。さらに、引き出し図（１ｂ）、（２ｂ）に示すように、スタンパ２０の変形を防ぐために、スタンパ２０のドレイン構造領域３４、３５に柱構造の強化構造２０Ｋを設けてもよい。さらにまた、引き出し図（１ａ）、（２ａ）において、正規パターン３１Ｐの余剰レジストの流入を十分に吸収できれば、ドレイン構造領域３４、３５の全体にドレイン構造ＤＰ（２０Ｐ）を設ける必要がなく、ギャップＧから一定の幅を有するドレイン構造ＤＰ（２０Ｐ）を設けてよい。また、ドレイン構造２０Ｐとしては、引き出し図（１ｃ）、（２ｃ）に示すよう所定の幅を持ったドレイン構造ＤＰ（２０Ｐ）を放射状に設けてもよい。 Further, in the first embodiment, the drain structure regions 34 and 35 of the stamper 20P are closed spaces, but they may be open spaces whose outer circumferences are open. Further, as shown in the drawing (1b) and (2b), in order to prevent the stamper 20 from being deformed, the column structure reinforcing structure 20K may be provided in the drain structure regions 34 and 35 of the stamper 20. Furthermore, in the drawing (1a) and (2a), if the inflow of surplus resist of the regular pattern 31P can be sufficiently absorbed, it is not necessary to provide the drain structure DP (20P) in the entire drain structure regions 34 and 35, and the gap A drain structure DP (20P) having a certain width from G may be provided. Further, as the drain structure 20P, drain structures DP (20P) having a predetermined width may be provided radially as shown in the drawing (1c) and (2c).
　ギャップＧは、データ処理に際して正規パターン３１Ｐとドレイン構造ＤＰとを明確に区別するためのものである。しかし、データをパターンによって正規パターン３１ｐとドレイン構造ＤＰと区別してもよい。その場合はギャップＧを設けなくてもよい。 The gap G is for clearly distinguishing between the regular pattern 31P and the drain structure DP in data processing. However, the data may be distinguished from the normal pattern 31p and the drain structure DP by patterns. In that case, the gap G may not be provided.
　上記実施例１ではパターン無し領域３２、３３にドレイン構造を設けたが、サーボパターンやデータを有する正規パターン３１Ｐの微細パターンが偏在したり、デューティ比が相違し疎密ができるところに実施形態１を適用してもよい。 In the first embodiment, a drain structure is provided in the non-pattern areas 32 and 33. However, the first embodiment is used where the fine pattern of the regular pattern 31P having servo patterns and data is unevenly distributed, or the duty ratio is different and can be made dense. You may apply.
　(実施例２)
　実施例２は、処理製品として図９に示すアナログ回路やデジタル回路といった機能を有する電子デバイス４０に本実施形態１を適用した例である。電子デバイス４０は、図９(ａ）に示すように、電極部４１、電子回路部４２、アース部（図示なし）等を有する。実施例２は、この電子回路部４２又は電極部４１の周囲に本実施形態１を適用した例である。電子回路部４２は、例えば配線から成るアナログ回路やデジタル回路といった機能を構成する。電子回路部４２の周辺部であって電子デバイス４０の内部には、パターンの無い領域４２ａがある。そこで、図９(ｂ)に示すように、パターンの無い領域４２ａにデバイス機能に悪影響がないドレイン構造ＤＰ（２０Ｐ）で、電子回路パターンＣＰ及び電極部４１の余剰レジストを吸収する。また、図９(ｃ)に示すように、電極部４１の外部に電極部４１の余剰レジストを吸収するドレイン構造ＤＰ(２０Ｐ）を設けてもよい。 (Example 2)
Example 2 is an example in which the first exemplary embodiment is applied to an electronic device 40 having functions such as an analog circuit and a digital circuit illustrated in FIG. 9 as a processing product. As shown in FIG. 9A, the electronic device 40 includes an electrode part 41, an electronic circuit part 42, a ground part (not shown), and the like. Example 2 is an example in which the first embodiment is applied around the electronic circuit part 42 or the electrode part 41. The electronic circuit unit 42 constitutes a function such as an analog circuit or a digital circuit composed of wiring, for example. There is an area 42 a without a pattern in the periphery of the electronic circuit section 42 and inside the electronic device 40. Therefore, as shown in FIG. 9B, the excess resist of the electronic circuit pattern CP and the electrode portion 41 is absorbed by the drain structure DP (20P) that does not adversely affect the device function in the unpatterned region 42a. Further, as shown in FIG. 9C, a drain structure DP (20 </ b> P) that absorbs surplus resist of the electrode part 41 may be provided outside the electrode part 41.
　図９(ｄ)及び図９(ｅ)は、それぞれ図９(ｂ)、図９(ｃ)において、スタンパ２０の撓み等の変形を防止するため、例えば柱状の強化構造２０Ｋをスタンパに設けた例を示す。 9 (d) and 9 (e), respectively, in FIG. 9 (b) and FIG. 9 (c), in order to prevent deformation such as bending of the stamper 20, for example, a columnar reinforcing structure 20K is provided in the stamper. An example is shown.
　（実施形態２）
  次に、図１０は、実施形態２の基本的な考え方を示す図である。例えば図９に示したアナログ回路やデジタル回路といった機能を有する電子デバイス４０には、電子回路部４２に離間して電極部４１のように面積を変えても機能的に変わらない大面積を有する領域がある。
  実施形態２は、このような大面積を有する部分を拡大して余剰レジストを吸収できるようにスタンパ２０Ｐにドレイン構造２０Ｐを設け、エッチマスク１５にドレイン構造ＤＰを形成する。 (Embodiment 2)
Next, FIG. 10 is a diagram illustrating a basic concept of the second embodiment. For example, the electronic device 40 having a function such as an analog circuit or a digital circuit shown in FIG. 9 is a region having a large area that is not functionally changed even if the area is changed like the electrode part 41 apart from the electronic circuit part 42. There is.
In the second embodiment, the drain structure 20P is provided in the stamper 20P and the drain structure DP is formed in the etch mask 15 so that the portion having such a large area can be enlarged to absorb the surplus resist.
　図１０の右側欄は、電子回路部４２に離間して電極部４１又はアース部（図示なし）の他のパターンと比較して大面積部の必要な正規パターンを有する処理製品のためのスタンパ２０Ｊによる従来プロセスを示す。なお、図１０では、微細な回路パターン４５を強調して示している。 The right column of FIG. 10 shows a stamper 20J for a processed product having a necessary regular pattern with a large area compared to other patterns of the electrode part 41 or the ground part (not shown) apart from the electronic circuit part 42. Shows the conventional process. In FIG. 10, the fine circuit pattern 45 is highlighted.
　図１０の左側欄は、実施形態２のインプリントプロセス（以下、単に実施形態２又実施例プロセスという）を示す。本実施形態のスタンパ２０は、右側欄に白で示す電極部４１又はアース部（図示なし）の大面積部の正規パターンの代わりに、電極パターン４１又はアース部（図示なし）の正規パターンの幅を拡大した黒枠で示す拡大ドレイン構造２０Ｐを有する。 10 shows the imprint process of the second embodiment (hereinafter simply referred to as the second embodiment or the example process). The stamper 20 of the present embodiment has a width of the regular pattern of the electrode pattern 41 or the ground portion (not shown) instead of the regular pattern of the large area portion of the electrode portion 41 or ground portion (not shown) shown in white in the right column. Has an enlarged drain structure 20P indicated by an enlarged black frame.
　従来プロセスは、図１０の右側欄に示したように、電極部４１又はアース部（図示なし）の大面積があると、マスク形成に必要なレジスト量が少ないために、ステップ１に示すようにベース膜ＢＭが厚くなる。また、離間した電子回路パターン部４２の周辺にもその影響がありベース膜厚が厚くなるところが存在する。その結果、プロセス時間が長くなりスループットが低下すると共に、オーバエッチになり、ステップ３に示すように各パターンの高さ及び幅が減少する。 In the conventional process, as shown in the right column of FIG. 10, if there is a large area of the electrode portion 41 or the ground portion (not shown), the amount of resist required for mask formation is small. The base film BM becomes thick. Further, there is a place where the base film thickness is increased due to the influence on the periphery of the electronic circuit pattern portion 42 which is separated. As a result, the process time becomes longer, the throughput is lowered, and overetching occurs, and the height and width of each pattern are reduced as shown in Step 3.
　一方、実施形態２プロセスでは、図１０のステップ１に示すように、スタンパ２０は、大面積部を有する電極部４１等に、正規パターンが果たす機能の障害にならないように、白で示す正規パターンにドレイン部分が付加された拡大した黒枠で示すドレイン構造２０Ｐを形成する。その結果、エッチマスク１５の形成における余剰レジストがドレイン構造２０Ｐに排出され、ステップ１に示すようにそれに伴い正規パターンのベース膜の厚さも均一化される。 On the other hand, in the process of the second embodiment, as shown in Step 1 of FIG. 10, the stamper 20 has a regular pattern shown in white so as not to hinder the function of the regular pattern on the electrode part 41 and the like having a large area. A drain structure 20P indicated by an enlarged black frame with a drain portion added thereto is formed. As a result, surplus resist in the formation of the etch mask 15 is discharged to the drain structure 20P, and as shown in step 1, the thickness of the base film of the regular pattern is made uniform accordingly.
　スタンパ２０Ｐに設けられるドレイン構造２０Ｐの高さは、正規パターンの高さと同じであれば、処理製品基材１２に形成されるドレイン構造ＤＰの高さは、正規パターンの高さよりも低くなる。このことは、前述したように、転写環境が転写の度に変動するために又はある程度余裕をもって余剰レジストをドレイン構造で吸収するために、ドレイン構造２０Ｐの空間部分の体積を想定される余剰レジスト量よりも大きく取る必要があるからである。ドレイン構造２０Ｐの高さによって、ドレイン構造２０Ｐの必要な幅も変わり、それらによって、形成されるドレイン構造ＤＰの高さ、幅も異なる。理想的には、余剰ドレイン量の変動量を見込んで、ドレイン構造ＤＰが正規パターンの高さよりも低くなるように、ドレイン構造２０Ｐの高さ、幅を定める。しかし、一般的には、幅を十分確保して、余剰レジストを吸収する。その場合は、ドレイン構造ＤＰの高さは正規パターンより低くなる。勿論、ドレイン構造２０Ｐの高さを高くしてもよい。 If the height of the drain structure 20P provided in the stamper 20P is the same as the height of the regular pattern, the height of the drain structure DP formed on the processed product base 12 is lower than the height of the regular pattern. This is because, as described above, the amount of surplus resist in which the volume of the space portion of the drain structure 20P is assumed in order for the transfer environment to change with each transfer or to absorb the surplus resist in the drain structure with some margin. This is because it is necessary to take a larger value. The required width of the drain structure 20P varies depending on the height of the drain structure 20P, and the height and width of the drain structure DP to be formed also vary depending on them. Ideally, the height and width of the drain structure 20P are determined so that the fluctuation amount of the surplus drain amount is expected and the drain structure DP is lower than the height of the normal pattern. However, generally, a sufficient width is secured to absorb excess resist. In that case, the height of the drain structure DP is lower than the normal pattern. Of course, the height of the drain structure 20P may be increased.
　また、正規パターンがドレイン構造ＤＰと兼用するようにしてもよい。特に、電極部やアース部などの正規パターンは、その他の正規パターンよりも広い体積で正規パターンが形成されるので、正規パターンが余剰レジストを吸収できるようにしてもよい。あるいは、正規パターン内に、正規パターンとして必要な部分に連続させたドレイン構造を設ける
ようにしても構わない。 The regular pattern may also be used as the drain structure DP. In particular, regular patterns such as electrode portions and ground portions are formed in a larger volume than other regular patterns, so that the regular patterns may absorb surplus resist. Or you may make it provide the drain structure made to continue in the part required as a regular pattern in a regular pattern.
　ベース膜ＢＭの厚さが均一化されると、ベース膜ＢＭの除去時間が短縮し、スループットの向上を図ることができる。ベース膜ＢＭの厚さを所定の厚さ以下に薄膜にできれば、ステップ２を省略すことができる。また、ベース膜ＢＭの除去時間が短縮できれば、ステップ３に示すように除去時間に起因するエッチマスクのオーバエッチ量が少なくなり、エッチマスク１５の高さ及び幅の減少を抑えることができる。 When the thickness of the base film BM is made uniform, the removal time of the base film BM is shortened, and the throughput can be improved. Step 2 can be omitted if the thickness of the base film BM can be reduced to a predetermined thickness or less. If the removal time of the base film BM can be shortened, the amount of overetching of the etch mask due to the removal time is reduced as shown in step 3, and the reduction in the height and width of the etch mask 15 can be suppressed.
　本実施形態２においても、正規パターンを拡大するドレイン構造を設けることで、ベース膜厚のバラツキを低減できるスタンパ又はインプリント装置を提供できる。 Also in the second embodiment, it is possible to provide a stamper or imprint apparatus that can reduce variations in the base film thickness by providing a drain structure that enlarges the regular pattern.
　また、本実施形態２においても、正規パターンを拡大するドレイン構造を設けることで、精度のよい微細パターンを有する処理製品或いは処理製品製造装置又は処理製品製造方法を提供できる。 Also in the second embodiment, it is possible to provide a processed product or a processed product manufacturing apparatus or a processed product manufacturing method having an accurate fine pattern by providing a drain structure for enlarging the regular pattern.
　(実施例３）
　実施例３は、処理製品として図９に示すアナログ回路やデジタル回路といった機能を有する電子デバイス４０に本実施形態２を適用した例であり、その実施例を図１１に示す。図１１(ａ)は、電極部４１を拡大するドレイン構造ＤＰ（２０Ｐ）を有する例を示す。図１１(ｂ)は、図１１(ａ)の実施例に、さらに柱状の強化構造ＤＫ（２０Ｋ）を設ける例である。ドレイン構造２０Ｐ（ＤＰ）の形状は、電子回路部４２及びパターンの無い領域４２ａ形状に基づいて余剰レジスト量を吸収するように設けている。 Example 3
Example 3 is an example in which the second exemplary embodiment is applied to an electronic device 40 having functions such as an analog circuit and a digital circuit shown in FIG. 9 as a processing product, and the example is shown in FIG. FIG. 11A shows an example having a drain structure DP (20P) in which the electrode portion 41 is enlarged. FIG. 11 (b) is an example in which a columnar reinforcing structure DK (20K) is further provided in the embodiment of FIG. 11 (a). The shape of the drain structure 20P (DP) is provided so as to absorb the surplus resist amount based on the shape of the electronic circuit portion 42 and the region 42a having no pattern.
　実施形態２の基本的な考え方で説明したように、形成されるドレイン構造ＤＰの高さは、他の正規パターンと必ずしも同じ高さとはならず、多少バラツキを有する。 As described in the basic concept of the second embodiment, the height of the drain structure DP to be formed is not necessarily the same as other regular patterns, and has some variation.
　図１２は、インプリントによる処理製品製造装置の一例として、磁気ディスクの例を示す図である。また、図１２は、磁気ディスク製造ラインのうちパターニングに関係するパターニング関連の磁気ディスク製造装置１００を示した図である。磁気ディスク製造ラインは、磁気ディスク製造装置の上流にはガラス基板に磁性層を形成するディスクを製造する工程の装置やディスクの表面を洗浄する工程の装置が、磁気ディスク製造装置の下流には潤滑膜を形成する装置がある。 FIG. 12 is a diagram showing an example of a magnetic disk as an example of a processed product manufacturing apparatus using imprinting. FIG. 12 is a diagram showing a patterning-related magnetic disk manufacturing apparatus 100 related to patterning in the magnetic disk manufacturing line. In the magnetic disk production line, upstream of the magnetic disk manufacturing apparatus, a device for manufacturing a disk for forming a magnetic layer on a glass substrate and a device for cleaning the surface of the disk are lubricated downstream of the magnetic disk manufacturing apparatus. There are devices for forming films.
　磁気ディスク製造装置１００は、ディスク表面にレジストをスピンコートするレジスト塗布装置５１、サーボ情報やデータトラックなどのパターンが形成されたスタンパを用いてレジスト塗布面にパターンをインプリントするスタンピング５２と、スタンピング状態で露光する露光装置５３と、を備えるインプリント装置１、レジストパターンをマスクとしてドライエッチングしディスク表面に溝を形成するエッチング装置５４、該溝に非磁性層を埋め込む非磁性層形成装置５５、ディスク表面に保護膜を形成する及び保護膜形成装置５６を有する。 The magnetic disk manufacturing apparatus 100 includes a resist coating device 51 that spin-coats a resist on the disk surface, a stamping 52 that imprints a pattern on a resist coating surface using a stamper on which patterns such as servo information and data tracks are formed, and a stamping An imprint apparatus 1 including an exposure apparatus 53 that performs exposure in a state; an etching apparatus 54 that forms a groove on a disk surface by dry etching using a resist pattern as a mask; a nonmagnetic layer forming apparatus 55 that embeds a nonmagnetic layer in the groove; A protective film is formed on the disk surface and a protective film forming device 56 is provided.
　以上説明した磁気ディスク製造装置に本発明のインプリント装置１を用いることによって、磁気ディスク製造装置のスループットを向上できる。 By using the imprint apparatus 1 of the present invention in the magnetic disk manufacturing apparatus described above, the throughput of the magnetic disk manufacturing apparatus can be improved.
　以上説明した本実施形態によれば、精度のよいパターンを有する磁気ディスク或いは磁気ディスク製造装置又は磁気ディスク製造方法を提供できる。 According to the present embodiment described above, it is possible to provide a magnetic disk, a magnetic disk manufacturing apparatus, or a magnetic disk manufacturing method having an accurate pattern.
　以上では処理製品として磁気ディスクを例に説明したが、アナログ回路やデジタル回路といった機能を有する電子やその他の処理製品にも同様に適用可能である。 In the above description, a magnetic disk has been described as an example of a processing product. However, the present invention can be similarly applied to an electronic device having a function such as an analog circuit or a digital circuit and other processing products.
　また、以上の実施形態では、ディスクリートトラックメディアを対象に説明したが、ビットで形成されたドレイン構造を設ける、或いは、ビットの高さを変えることで本発明をビットパターンドメディアにも適用可能である。 In the above embodiments, the discrete track media has been described. However, the present invention can be applied to bit patterned media by providing a drain structure formed of bits or changing the height of the bits. is there.
　１：インプリント装置　　　　　　　　　　１２：処理製品基材
　１４：トラックパターン　　　　　　　　　１５：エッチマスク 
　１６：ビットパターン　　　　　　　　　　１７：プラズマガス
　２０：スタンパ　　　　　　　　　　　　　２０Ｊ：従来のスタンパ
　２０Ｐ：スタンパのドレイン構造　　　　　２０Ｋ：スタンパの強化構造
　３０：磁気ディスク　　　　　　　　　　　３０Ｊ：従来の磁気ディスク
　３１：パターン領域　　　　　　　　　　　３１Ｐ：正規パターン
　３２、３３：パターン無し領域　　　　　　３４、３５：ドレイン構造領域
　４０：アナログ回路やデジタル回路といった機能を有する電子デバイス
　４１：電極部　　　　　　　　　　　　　　４２：電子回路部
　４３：アース部　　　　　　　　　　　　　４４：回路領域群
　４５：回路パターン　　　　　　　　　　　５１：レジスト塗布装置
　５２：スタンピング装置　　　　　　　　　５３：露光装置
　５４：エッチング装置　　　　　　　　　　５５：非磁性層形成装置
　５６：保護膜形成装置　　　　　　　　　　１００：磁気ディスク製造装置
　ＢＭ：ベース膜　　　　　　　　　　　　　ＤＰ：ドレイン構造
　ＤＫ：レジストの強化構造　　　　　　　　ＣＰ：電子回路パターン
　Ｇ：パターン領域とドレイン構造領域間のギャップ
　Ｐ：レジスト　　　　　　　　　　　　　　ＳＰ：正規パターン 1: Imprint apparatus 12: Processed product base material 14: Track pattern 15: Etch mask
16: Bit pattern 17: Plasma gas 20: Stamper 20J: Conventional stamper 20P: Damper structure of stamper 20K: Strengthening structure of stamper 30: Magnetic disk 30J: Conventional magnetic disk 31: Pattern area 31P: Regular pattern 32, 33: No pattern area 34, 35: Drain structure area 40: Electronic device having functions such as analog circuit and digital circuit 41: Electrode section 42: Electronic circuit section 43: Earth section 44: Circuit area group 45: Circuit pattern 51: Resist coating apparatus 52: Stamping device 53: Exposure device 54: Etching device 55: Nonmagnetic layer forming device 56: Protection film forming device 100: Magnetic disk manufacturing device BM: Base film DP: Drain structure DK: Reinforced resist structure CP: Electronic circuit pattern G: Gap between pattern region and drain structure region P: Resist SP: Regular pattern

Claims (23)

  1. 　表面に凹凸形状を備えるパターンを有するスタンパと、前記パターンが転写された処理製品基材の表面に形成された成形材料を硬化するエネルギー源と、を有するインプリント装置において、
    　前記スタンパは、前記パターンとして、処理製品として機能を果たす正規パターンと、
    前記成形材料のうち前記正規パターンを転写するときに余剰となった余剰成形材料を吸収するスタンパドレイン構造と、を有し、前記スタンパドレイン構造の容積は前記余剰成形材料の量よりも大きいことを特徴とするインプリント装置。     In an imprint apparatus having a stamper having a pattern having a concavo-convex shape on the surface, and an energy source for curing a molding material formed on the surface of the processed product base to which the pattern is transferred,
    The stamper, as the pattern, a regular pattern that functions as a processing product,
    A stamper drain structure that absorbs surplus molding material surplus when transferring the regular pattern of the molding material, and the volume of the stamper drain structure is larger than the amount of the surplus molding material A characteristic imprint apparatus.
  2. 　前記スタンパドレイン構造は、前記正規パターンの他に設けられたパターンであることを特徴とする請求項１に記載のインプリント装置。 The imprint apparatus according to claim 1, wherein the stamper drain structure is a pattern provided in addition to the regular pattern.
  3. 　前記スタンパドレイン構造は、前記正規パターンを平面的に拡大するパターンであることを特徴とする請求項１に記載のインプリント装置。 2. The imprint apparatus according to claim 1, wherein the stamper drain structure is a pattern that enlarges the regular pattern in a plane.
  4. 　前記スタンパドレイン構造は、余剰成形材料の流動可能な状態を維持する空間を有することを特徴とする請求項１に記載のインプリント装置。 2. The imprint apparatus according to claim 1, wherein the stamper drain structure has a space for maintaining a flowable state of the surplus molding material.
  5. 　前記スタンパドレイン構造に前記余剰成形材料で成形された構造の高さは前記正規パターンで成形されたパターンの高さより低いことを特徴とする請求項２又は３に記載のインプリント装置。 4. The imprint apparatus according to claim 2, wherein a height of the structure formed by the surplus molding material on the stamper drain structure is lower than a height of the pattern formed by the regular pattern.
  6. 　前記スタンパは、前記スタンパ撓みを防止する強化構造を有することを特徴とする請求項５に記載のインプリント装置。 6. The imprint apparatus according to claim 5, wherein the stamper has a reinforcing structure that prevents the stamper from being bent.
  7. 　最終的に処理製品となる処理製品基材の表面に成形材料を塗布する塗布装置と、前記塗布された成形材料にスタンパの有する凹凸形状のパターンを転写するインプリント装置と、前記転写されたパターンをマスクとして前記処理製品基材をエッチングするエッチング装置と、を有する処理製品製造装置において、
    　前記スタンパは、前記パターンとして、処理製品として機能を果たす正規パターンと、
    前記成形材料のうち前記正規パターンを転写するときに余剰となった余剰成形材料を吸収するスタンパドレイン構造と、を有し、前記スタンパドレイン構造の容積は前記余剰成形材料の量よりも大きいことを特徴とする処理製品製造装置。     A coating device that applies a molding material to the surface of a processed product substrate that will eventually become a processed product, an imprint device that transfers a concave-convex pattern of a stamper to the applied molding material, and the transferred pattern An etching apparatus for etching the processed product base material using a mask as a mask,
    The stamper, as the pattern, a regular pattern that functions as a processing product,
    A stamper drain structure that absorbs surplus molding material surplus when transferring the regular pattern of the molding material, and the volume of the stamper drain structure is larger than the amount of the surplus molding material Characterized processing product manufacturing equipment.
  8. 　前記インプリント装置は、前記正規パターンの他に設けられた前記スタンパドレイン構造を具備する前記スタンパを有することを特徴とする請求項７に記載の処理製品製造装置。 The processed product manufacturing apparatus according to claim 7, wherein the imprint apparatus includes the stamper including the stamper drain structure provided in addition to the regular pattern.
  9. 　前記インプリント装置は、前記正規パターンを平面的に拡大する前記スタンパドレイン構造を具備する前記スタンパを有することを特徴とする請求項７に記載の処理製品製造装置。 The processed product manufacturing apparatus according to claim 7, wherein the imprint apparatus includes the stamper including the stamper drain structure that expands the regular pattern in a plane.
  10. 　前記インプリント装置は、前記スタンパドレイン構造に、前記スタンパ撓みを防止する強化構造を具備する前記スタンパを有することを特徴とする請求項７に記載の処理製品製造装置。 The processed product manufacturing apparatus according to claim 7, wherein the imprint apparatus includes the stamper having a reinforcing structure that prevents the stamper from being bent in the stamper drain structure.
  11. 　前記処理製品はドーナツ状の円板に同心円状にサーボパターンやデータの正規パターン領域を有する磁気ディスクであって、前記インプリント装置は、前記ドーナツ状の円板の内側及び外側の領域、又は前記磁気ディスクの前記正規パターン領域に前記スタンパドレイン構造を設けたことを特徴とする請求項８に記載の処理製品製造装置。 The processed product is a magnetic disk having a regular pattern area of servo patterns and data concentrically on a donut-shaped disk, and the imprint apparatus includes areas on the inside and outside of the donut-shaped disk, or 9. The processed product manufacturing apparatus according to claim 8, wherein the stamper drain structure is provided in the regular pattern region of the magnetic disk.
  12. 　前記処理製品はアナログ回路やデジタル回路といった機能を有する電子デバイスであって、前記インプリント装置は、前記電子デバイスの有する電子回路部の周辺部に前記スタンパドレイン構造を設けたことを特徴とする請求項８に記載の処理製品製造装置。 The processing product is an electronic device having a function such as an analog circuit or a digital circuit, and the imprint apparatus is provided with the stamper drain structure in a peripheral portion of an electronic circuit portion of the electronic device. Item 9. A processed product manufacturing apparatus according to Item 8.
  13. 　前記処理製品はアナログ回路やデジタル回路といった機能を有する電子デバイスであって、前記インプリント装置は、前記電子デバイスの有する電極部又はアース部の少なくとも一方に前記スタンパドレイン構造を設けたことを有する特徴とする請求項９に記載の処理製品製造装置。 The processed product is an electronic device having a function such as an analog circuit or a digital circuit, and the imprint apparatus is characterized in that the stamper drain structure is provided in at least one of an electrode part or a ground part of the electronic device. The processing product manufacturing apparatus according to claim 9.
  14. 　最終的に処理製品となる処理製品基材の表面に成形材料を塗布し、前記塗布された成形材料にスタンパの有する凹凸形状のパターンを転写し、前記転写されたパターンをマスクとして前記処理製品基材をエッチングする処理製品製造方法において、
    　前記転写は、前記処理製品基材から形成される処理製品の機能を果たすときに余剰となった余剰成形材料を吸収するスタンパドレイン構造で行われ、前記スタンパドレイン構造の容積は前記余剰レジストの量よりも大きいことを特徴とする処理製品製造方法。     A molding material is finally applied to the surface of a processed product base material to be a processed product, a pattern having a concavo-convex shape of a stamper is transferred to the applied molding material, and the processed product base is used with the transferred pattern as a mask. In a process product manufacturing method for etching a material,
    The transfer is performed with a stamper drain structure that absorbs surplus molding material that is surplus when performing the function of the processed product formed from the processed product base material, and the volume of the stamper drain structure is the amount of the excess resist. Processed product manufacturing method characterized by being larger than.
  15. 　前記処理製品はドーナツ状の円板に同心円状にサーボパターンやデータの正規パターン領域を有する磁気ディスクであって、前記転写は前記処理製品として機能を果たす正規パターンの他に設けられた前記ドレイン構造を前記ドーナツ状の円板の内側及び外側の領域、又は前記磁気ディスクの前記正規パターン領域に転写することを特徴とする請求項１４
    に記載の処理製品製造方法。     The processed product is a magnetic disk having a servo pattern and a regular pattern region of data concentrically on a donut-shaped disk, and the transfer is provided in addition to the regular pattern that functions as the processed product. 15 is transferred to the inner and outer regions of the doughnut-shaped disk or the regular pattern region of the magnetic disk.
    Processed product manufacturing method as described in 4.
  16. 　前記処理製品はアナログ回路やデジタル回路といった機能を有する電子デバイスであって、前記転写は前記処理製品として機能を果たす正規パターンの他に設けられた前記ドレイン構造を前記電子デバイスの有するフィルタ部の周辺部に転写することを特徴とする請求項１４に記載の処理製品製造方法。 The processed product is an electronic device having a function such as an analog circuit or a digital circuit, and the transfer is arranged around the filter unit of the electronic device having the drain structure provided in addition to a regular pattern that functions as the processed product. The processed product manufacturing method according to claim 14, wherein the transferred product is transferred to a part.
  17. 　前記処理製品はアナログ回路やデジタル回路といった機能を有する電子デバイスであって、前記転写は前記処理製品として機能を果たす正規パターンを平面的に拡大する前記ドレイン構造を前記電子デバイスの有する電極部又はアース部の少なくとも一方に転写することを特徴とする請求項１４に記載の処理製品製造方法。 The processing product is an electronic device having a function such as an analog circuit or a digital circuit, and the transfer has an electrode portion or a ground having the drain structure that expands the regular pattern that functions as the processing product in a plane. The process product manufacturing method according to claim 14, wherein the process product is transferred to at least one of the parts.
  18. 　処理製品基材の表面に成形材料を塗布し、前記塗布された成形材料にスタンパの有する凹凸形状のパターンを転写し、前記転写されたパターンをマスクとして前記処理製品基材をエッチングされ製造された処理製品において、
    　前記パターンとして、処理製品として機能を果たす正規パターンと、前記成形材料のうち前記正規パターンを転写するときに余剰となった余剰成形材料を形成されたドレイン構造とを有し、前記ドレイン構造は前記表面に前記正規パターンとは異なった位置に設けられていることを特徴とする処理製品。     A molding material is applied to the surface of the treated product base material, and a pattern having an uneven shape of a stamper is transferred to the applied molding material, and the treated product base material is etched using the transferred pattern as a mask. In processed products,
    The pattern includes a regular pattern that functions as a processed product, and a drain structure formed with an excess molding material that is surplus when the regular pattern is transferred out of the molding material. A treated product provided on a surface at a position different from the regular pattern.
  19. 　前記ドレイン構造は、前記処理製品として機能を果たす正規パターンと分離された位置に設けられたパターンであることを特徴とする請求項１８に記載の処理製品。 The treated product according to claim 18, wherein the drain structure is a pattern provided at a position separated from a regular pattern that functions as the treated product.
  20. 　前記ドレイン構造は、前記処理製品として機能を果たす正規パターンを平面的に拡大するパターンであることを特徴とする請求項１８に記載の処理製品。 The processed product according to claim 18, wherein the drain structure is a pattern that planarly expands a regular pattern that functions as the processed product.
  21. 　表面に凹凸形状のパターンを備え、塗布された成形材料を有する処理製品基材の表面に有する成形材料に前記凹凸形状のパターンを転写するスタンパにおいて、
    　前記パターンとして、処理製品として機能を果たす正規パターンと、前記成形材料のうち前記正規パターンを転写するときに余剰となった余剰成形材料で吸収するドレイン構造とを有し、前記ドレイン構造は前記表面に前記正規パターンとは異なった位置に設けられていることを特徴とするスタンパ。     In a stamper having a concavo-convex pattern on the surface and transferring the concavo-convex pattern to the molding material on the surface of the treated product substrate having the applied molding material,
    The pattern includes a regular pattern that functions as a processed product, and a drain structure that absorbs excess surplus molding material when the regular pattern is transferred among the molding material, and the drain structure is the surface. The stamper is provided at a position different from the regular pattern.
  22. 　前記ドレイン構造は、前記処理製品として機能を果たす正規パターンと分離された位置に設けられたパターンであることを特徴とする請求項２１に記載のスタンパ。 The stamper according to claim 21, wherein the drain structure is a pattern provided at a position separated from a regular pattern that functions as the processing product.
  23. 　表面に凹凸形状のパターンを備え、塗布された成形材料を有する処理製品基材の表面に有する成形材料に前記凹凸形状のパターンを転写するスタンパにおいて、
    　前記パターンとして、処理製品として機能を果たす正規パターンと、前記成形材料のうち前記正規パターンを転写するときに余剰となった余剰成形材料で吸収するドレイン構造とを有し、
    　前記正規パターンに前記ドレイン構造を設けたことを特徴とするスタンパ。     In a stamper having a concavo-convex pattern on the surface and transferring the concavo-convex pattern to the molding material on the surface of the treated product substrate having the applied molding material,
    As the pattern, having a regular pattern that functions as a processed product, and a drain structure that absorbs surplus molding material that becomes surplus when transferring the regular pattern among the molding material,
    A stamper, wherein the regular pattern is provided with the drain structure.
PCT/JP2012/078246 2012-01-13 2012-10-31 Stamper, imprinting device and processed product, as well as processed product manufacturing device and processed product manufacturing method WO2013105327A1 (en)

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Citations (2)

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JP2007095116A (en) * 2005-09-27 2007-04-12 Toshiba Corp Magnetic recording medium stamper, manufacturing method of magnetic recording medium using it, and manufacturing method of magnetic recording medium stamper
WO2008072319A1 (en) * 2006-12-13 2008-06-19 Pioneer Corporation Transfer die for recording medium fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095116A (en) * 2005-09-27 2007-04-12 Toshiba Corp Magnetic recording medium stamper, manufacturing method of magnetic recording medium using it, and manufacturing method of magnetic recording medium stamper
WO2008072319A1 (en) * 2006-12-13 2008-06-19 Pioneer Corporation Transfer die for recording medium fabrication

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