WO2013075923A1 - Correction d'intensité d'un faisceau lumineux - Google Patents

Correction d'intensité d'un faisceau lumineux Download PDF

Info

Publication number
WO2013075923A1
WO2013075923A1 PCT/EP2012/071675 EP2012071675W WO2013075923A1 WO 2013075923 A1 WO2013075923 A1 WO 2013075923A1 EP 2012071675 W EP2012071675 W EP 2012071675W WO 2013075923 A1 WO2013075923 A1 WO 2013075923A1
Authority
WO
WIPO (PCT)
Prior art keywords
ejection
illumination
correction device
illumination light
attenuating
Prior art date
Application number
PCT/EP2012/071675
Other languages
English (en)
Inventor
Alexander Wolf
Boris Bittner
Aksel GÖHNERMEIER
Sonja Schneider
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2013075923A1 publication Critical patent/WO2013075923A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Definitions

  • German patent application DE 10 201 1 086 944.1 is incor- porated by reference.
  • the invention relates to a correction device for influencing an intensity of a beam of illumination light of an illumination system of a projection exposure apparatus for projection lithography. Furthermore, the invention re- lates to an illumination optical unit comprising such a correction device, an illumination system comprising such an illumination optical unit, a projection exposure apparatus comprising such an illumination system, a method for producing a micro- or nanostructured component using a projection exposure apparatus set by means of the correction device, and a component structured by means of such a production method.
  • a correction device of the type mentioned in the introduction is known from JP 2006 080 108 A and from DE 10 2009 025 362 Al . Further correction devices are known from US 2009/0 040 495 Al and US 2006/0 262 288 Al .
  • a correction device comprising the features specified in Claim 1.
  • a correction device by means of which ejection instants for ejecting attenuating bodies are predefined yields a unique approach, in comparison with prior art, for influencing the intensity of the illumination light, this approach being suitable for EUV, in particular.
  • the illumination intensity is influenced by attenuation of the illumination light.
  • the attenuating bodies can attenuate the illumination light by absorption and/or scattering.
  • the correction device can be operated in a vacuum or high vacuum, which allows good trajectory control of the attenuating bodies owing to lack of air resistance.
  • the correction device can be used for influencing an intensity distribution of the illumination light beam over an object field of the projection exposure apparatus or for influencing an illumination angle distribution of the projection exposure apparatus.
  • the projection exposure apparatus can be operated with EUV light in the range of between 5 nm and 30 nm, in particular at wavelengths of 13.5 nm or approximately 6.9 nm. In this case, since the illumination system of an EUV projection exposure apparatus is operated in a vacuum anyway, a dedicated evacuation of the correction device can be dispensed with.
  • the projection exposure apparatus for which the correction device is used can also be operated with DUV light, in particular in the range of 248 nm, or with VUV light, in particular in the range of 193 nm.
  • the correction device can be operated in a dedicated vacuum chamber, for example, which can be accommodated within the illumination system of the projection exposure apparatus.
  • the attenuating bodies may be liquid or solid particles.
  • the positions of the ejection channels in the different rows can be arranged in a manner offset relative to one another, which again increases the resolution in the dimension along the rows.
  • the ejection channels can all run within an ejection channel plane.
  • the trajectories of the attenuating bodies which are respectively assigned to the ejection channels can run parallel to one another, but also at an angle with respect to one an- other. A course of the trajectories at an angle with respect to one another makes it possible to predefine a higher trajectory density at locations at which it should be expected that a greater attenuation of the beam intensity has to be achieved.
  • Independent drivability according to Claim 4 allows a one-dimensional or else a two-dimensional illumination light beam cross section correction, such that a corresponding field distribution or else illumination angle distribution correction of the illumination of an illumination field or object field can occur.
  • Droplets according to Claim 5 have proved to be suitable attenuating bodies.
  • the droplets can be microdroplets. They can be mercury droplets. Alternatively, instead of droplets it is also possible for solids to be ejected, for example microparticles.
  • the attenuating bodies can be ejected by the ejec- tion device with a carrier gas or without a carrier gas.
  • carrier gas it is possible to use a gas which has a low absorption at a used wavelength of the illumination light.
  • helium (He) can be used as a carrier gas.
  • an He/N mixture or pure nitrogen (N) can also be used as a carrier gas, in particular at used wavelengths higher than EUV wavelengths.
  • a fluid connection according to Claim 6 makes possible a closed circuit for the attenuating body material within the correction device.
  • a detection device enables the correction device to be operated with closed-loop control.
  • Predefined desired values of a field intensity distribution and/or of an illumination angle distribution over an ob- ject field of the projection exposure apparatus can be controlled by closed- loop control.
  • a correction device ensures that the attenuating bodies, in particular where they pass through the beam of illumination light, are not undesirably disturbed by particle impacts of a surrounding atmosphere.
  • the ejection device and/or the collecting device can be contained in the evacuated chamber. This ensures that the complete trajectory of the attenuating bodies between the ejection device and the collecting device are not undesirably disturbed by particle impacts of the surrounding atmos- phere.
  • the configuration of the correction device with the evacuated chamber is particularly advantageous where a beam path of the illumination light beam otherwise does not run in an evacuated space.
  • an illumination optical unit according to Claim 9, of an illumination system according to Claim 10, of a projection exposure apparatus according to Claim 1 1, of a production method according to Claim 13 and of a micro- or nanostructured component according to Claim 14 correspond to those which have already been explained above with reference to the correction device according to the invention.
  • a targeted predefmition for example of a homogenization, of a field intensity distribution and of a corresponding predefmition of an illumination angle distribution, it is possible to achieve a well-defined illumination of the object during the operation of the projection exposure apparatus and thus a correspondingly high projection resolution.
  • a temporal synchronization of the correction device with the light source by means of the control device according to Claim 12 allows e.g.
  • Figure 1 shows schematically and with regard to an illumination optical unit in meridional section a projection exposure apparatus for projection lithography
  • Figure 2 shows in an enlarged manner a correction device for influencing an intensity of an illumination light beam of an illumination system of the projection exposure apparatus according to figure 1 , wherein the illumination light beam has a deviating ray direction in comparison with the illustration according to figure 1 ;
  • Figure 3 shows a view of the correction device from viewing direction
  • Figure 4 shows a temporal intensity profile of a pulsed EUV light source of the illumination system, wherein the temporal intensity profile of one of the light pulses is illustrated in a sec- ond diagram with higher temporal resolution;
  • Figure 5 shows, from a viewing direction corresponding to the viewing direction according to figure 3, a spatial distribution of attenuating bodies in the form of droplets, wherein the distribu- tions with respect to three successive light pulses of the illumination light are specifically illustrated;
  • Figure 6 shows a view of a facet arrangement of a field facet mirror of the illumination optical unit of the projection exposure appa- ratus according to figure 1 ;
  • Figure 7 shows a view of a facet arrangement of a pupil facet mirror of the illumination optical unit of the projection exposure apparatus according to figure 1 ;
  • Figure 8 shows, in an illustration similar to figure 6, a facet arrangement of a further embodiment of a field facet mirror
  • Fig. 9 schematically shows a meridional section through a further embodiment of an illumination system according to the invention within a further embodiment of a projection exposure apparatus for projection lithography comprising a further em- bodiment of an illumination optical unit, which comprises a mirror array comprising tilting actuators driven by means of a controller, and a raster module comprising a two-stage raster arrangement, and also a correction device for influencing an intensity of an illumination beam of the illumination system;
  • Figure 10 shows a further embodiment of a correction device for influencing the intensity of the illumination beam of one of the illumination systems
  • Figure 1 1 shows a further embodiment of a correction device for influencing the intensity of the illumination beam of one of the illumination systems.
  • a projection exposure apparatus 1 for microlithography serves for produc- ing a micro- or nanostructured electronic semiconductor component.
  • the projection exposure apparatus 1 can be operated in a high vacuum.
  • a light source 2 emits EUV radiation used for illumination in the wavelength range of, for example, between 5 nm and 30 nm.
  • the light source 2 can be a GDPP (gas discharge produced plasma) source or an LPP (laser produced plasma) source.
  • a radiation source based on a synchrotron can also be used for the light source 2. Information concerning such a light source can be found by the person skilled in the art in US 6 859 515 B2, for example.
  • EUV illumination light or illumination radiation in the form of an illumination or imaging light beam 3 is used for illumination and imaging within the projection exposure apparatus 1.
  • the projection exposure apparatus 1 can also use VUV and DUV illumination light for the projection exposure.
  • VUV and DUV illumination is known from DE 10 2006 042 452 A 1 and WO 2009/087 805 A 1.
  • a corresponding collector is known from EP 1 225 481 A2.
  • the EUV illumination light 3 Downstream of the collector 4, the EUV illumination light 3 firstly passes through an intermediate focal plane 5, which can be used for separating the imaging light beam 3 from undesirable radiation or particle portions. After passing through the intermediate focal plane 5, the imaging light beam 3 firstly impinges on a field facet mirror 6.
  • a Cartesian global xyz coordinate system is in each case depicted in the drawing.
  • the x-axis runs perpendicularly to the plane of the drawing and out of the latter.
  • the y-axis runs toward the right in figure 1.
  • the z-axis runs upward in figure 1.
  • a Cartesian local xyz or xy coordinate system is in each case also used in the following figures.
  • the respective local xy coordinates span, unless described otherwise, a respective principal arrangement plane of the optical component, for example a reflection plane.
  • the x-axes of the global xyz coordinate sys- tem and of the local xyz or xy coordinate systems run parallel to one another.
  • the respective y-axes of the local xyz or xy coordinate systems are at an angle with respect to the y-axis of the global xyz coordinate system which corresponds to a tilting angle of the respective optical component about the x-axis.
  • Figures 6 and 8 show by way of example facet arrangements of field facets 7 of the field facet mirror 6.
  • the field facets 7 are rectangular or curved and in each case have the same x/y aspect ratio.
  • the x/y aspect ratio can for example be 12/5, can be 25/4 or can be 104/8.
  • the field facets 7 predefine a reflection surface of the field facet mirror 6 and are grouped into four columns each of six to eight field facet groups 8a, 8b.
  • the field facet groups 8a in each case have seven field facets 7.
  • the two additional marginal field facet groups 8b of the two central field facet columns in each case have four field facets 7.
  • the facet arrangement of the field facet mirror 6 has interspaces 9 in which the field facet mirror 6 is shaded by holding spokes of the collector 4. Insofar as an LPP source is used as the light source 2, corresponding shading can also be produced by a tin droplet generator, which is arranged adjacent to the collector 4 and is not illustrated in the drawing.
  • FIG. 7 shows an exemplary facet arrangement of round pupil facets 1 1 of the pupil facet mirror 10.
  • the pupil facets 1 1 are arranged around a center in facet rings lying one inside another.
  • a pupil facet 1 1 is assigned to each imaging light partial beam of the EUV illumination light 3 which is re- fleeted by one of the field facets 7, such that a respective facet pair impinged upon and comprising one of the field facets 7 and one of the pupil facets 1 1 predefines the imaging light channel for the associated imaging light partial beam of the EUV illumination light 3.
  • the channel-wise assignment of the pupil facets 1 1 to the field facets 7 is effected in a manner dependent on a desired illumination by the projection exposure apparatus 1.
  • the EUV mirror 14 is embodied as a mirror for grazing incidence (grazing incidence mirror).
  • a reticle 17 Arranged in the object plane 16 is a reticle 17, from which, with the EUV illumination light 3, an illumination region is illuminated which coordinates with an object field 18 of a downstream projection optical unit 19 of the projection exposure apparatus 1.
  • the imaging light channels are superimposed in the object field 18.
  • the EUV illumination light 3 is reflected from the reticle 17.
  • the reticle 17 is held by an object holder 17a, which is displaceable in a driven manner along the displacement direction y.
  • the projection optical unit 19 images the object field 18 in the object plane 16 into an image field 20 in an image plane 21.
  • a wafer 22 Arranged in said image plane 21 is a wafer 22, said wafer bearing a light-sensitive layer, which is exposed during the projection exposure by means of the projection exposure apparatus 1.
  • the wafer 22, that is to say the substrate onto which im- aging is effected, is held by a substrate holder 22a, which is displaceable along the displacement direction y synchronously with the displacement of the object holder 17a.
  • both the reticle 17 and the wafer 22 are scanned in a synchronized manner in the y-direction.
  • the projection exposure apparatus 1 is embodied as a scanner.
  • the scanning direction is also designated as the object displacement direction here- inbelow.
  • a correction device 23 is arranged in the beam path of the illumination light beam 3 between the EUV mirror 14 and the object field 18.
  • the correction device 23 serves for the influencing of an intensity of the illumination light beam 3 of an illumination system 24 of the projection exposure apparatus 1.
  • the illumination system 24 comprises the light source 2, the collector 4 and an illumination optical unit 25, which also includes the EUV mirrors 12 to 14 alongside the two facet mirrors 6 and 10.
  • the correction device influences an xy intensity distribution of a cross section of an illumination light beam, as will be explained below with reference to figures 2 to 5. This intensity influencing can result in an influencing of an illumination intensity distribution over the object field 18 and/or in the influ- encing of an illumination angle distribution over the object field 18.
  • the correction device 23 can be arranged in the region of a reticle masking system (REMA) of the DUV or VUV illumination optical unit, for example directly upstream or directly downstream of a REMA diaphragm.
  • REMA reticle masking system
  • Figures 2 and 3 show the correction device 23 in an enlarged manner in comparison with figure 1.
  • the correction device has an ejection device 26 comprising a plurality of ejection channels 27 for attenuating bodies 28 in the form of droplets.
  • the attenuating bodies 28 are also discrete microdrop- lets in the flight direction, that is to say droplets having a diameter in the range of between 1 ⁇ and 1000 ⁇ .
  • the diameter of the attenuating bodies 28 can be, for example, 10 ⁇ , 25 ⁇ , 50 ⁇ or 100 ⁇ .
  • the attenuating bodies 28 are mercury droplets.
  • the ejection channels 27 are present in the form of micro-ejection nozzles, such as are known, in principle, in connection with inkjet printers.
  • the width of an entire row of the ejection channels 27 is adapted to the width of the illumination light beam 3 in the x-direction, such that attenuating bodies 28 can fly through the entire xy cross section of the illumination light beam 3.
  • the ejection channels 27 of the ejection device 26 are arranged in the form of a 3x14 array. As is evident from figure 2, three array rows are present in a manner spaced apart from one another in the z-direction. A total of 14 array columns are present in a manner spaced apart from one another in the x-direction. A different array or column arrangement of the ejection channels 27 is also possible in variants of the ejection device 26, for example a column comprising M ejection channels 27 which are spaced apart from one another in the x-direction, wherein M can be in the range of between 10 and 500. Correspondingly, it is also possible to arrange one to ten chan- nel rows, for example.
  • more than 1000 ejection channels 27 situated alongside one another can be present in the x-direction.
  • the channel rows adjacent to one another in the z-direction can be offset relative to one another in the x-direction in order to increase an x-resolution of the ejection device 26.
  • the correction device 23 is arranged in proximity to a field plane of the projection optical unit 19. From the influencing of the intensity distribution over the cross section of the illumination light beam 3, there then results a corresponding intensity distribution of the illumination of the object field 18.
  • the trajectory 38 of the attenuating bodies 28 through the illumination light beam 3 does not run in proximity to a field plane of the illumination optical unit 25 or of the projection optical unit 19, as in the case of the arrangement of the correc- tion device 23 according to figure 1 , but rather in proximity to a pupil plane of the illumination optical unit 25 or of the projection optical unit 19, in particular in proximity to the pupil facet mirror 10.
  • Such an arrangement makes it possible to achieve a defined influencing of an illumination angle distribution of the illumination of the object field 18 by using the correc- tion device 23.
  • droplets as the attenuating bodies 28 solids are ejected by the ejection device 26 and collected by the collecting device 32.
  • plasma or gas pulses can also be ejected as attenuating bodies.
  • a fluid line leads to each of the ejection channels 27.
  • a drivable valve 29 is in each case arranged in the line path upstream of the nozzle ends of the ejection channels 27.
  • Such a valve 29 is assigned to each of the ejection channels 27.
  • One of said valves 29 is illustrated by way of example in figure 3.
  • the control device 30 is signal-connected to the valves 29 of the ejection channels 27 via a multipole signal line 31, as illustrated schematically for one of the valves 29 in figure 3.
  • the control device 30 serves for predefining ejection instants for ejecting a respective attenuating body 28 from a respective one of the ejection channels 27. This predefmition of ejection instants is also known, in principle, from the technology of inkjet printers.
  • the correction device 23 furthermore comprises a collecting device 32 for the ejected attenuating bodies 28.
  • the attenuating bodies 28 fly through the illumination light beam 3, as illustrated in figures 2 and 3.
  • figure 2 shows a part of the illumination light beam 3 in a side view, wherein a ray angle deviates from the ray angle shown in figure 1.
  • Figure 3 shows the illumination light beam 3 in cross section.
  • the collecting device 32 has a collecting pan 33 and a discharge line 34 for discharging the collected attenuating bodies 28.
  • a circulating pump 35 is arranged in the discharge line 34.
  • the collecting device 32 is fluid-connected to the ejection device 26, as illustrated sche- matically in a dashed fashion in figure 1.
  • the discharge line 34 is routed such that it is routed past the beam path of the illumination light beam 3.
  • a closed circuit of the mercury forming the attenuating bodies 28 is provided via the discharge line 34.
  • the correction device 23 furthermore comprises a detection device 36 for detecting an x-intensity distribution or else an xy-intensity distribution in the illumination light beam 3.
  • the detection device 36 is embodied as a linear sensor array comprising detec- tion elements which are lined up alongside one another in the x-direction and are sensitive to the EUV light of the illumination light beam 3.
  • the detection device 36 is signal-connected to the control device 30 via a mul- tipole signal line 37.
  • Figure 4 shows a temporal profile of an emission of the EUV light source 2, which is embodied as a pulsed light source.
  • the pulse duration tau is approximately 50 ns.
  • a pulse frequency of the light source 2 is 6 kHz. Alternatively, the pulse frequency of the light source 2 can be up to 100 kHz.
  • the pulse duration tau is approximately 150 ns and the pulse frequency is 6 kHz.
  • the temporal separation dT between two temporally successive light pulses is accordingly just under 2 ms.
  • a duty cycle tau/dT is therefore approximately 10 "4 .
  • a flight velocity of the attenuating bodies 28 through the illumination light beam 3 is adapted to the pulse frequency of the light source 2.
  • each EUV light pulse sees an xy droplet distribution generated specially for said light pulse by means of the driver of the ejection channels 27 by the control device 30.
  • the temporal relationship is similar to that in a stroboscope.
  • the driving can in this case be such that each EUV light pulse sees exactly the same xy droplet distribution.
  • the control device 30 then operates in a manner temporally synchronized with the EUV light source 2. This is used for example in the case of low pulse frequencies of the light source 2. Exactly identical xy droplet distributions are illustrated in figure 5 for three successive EUV light pulses N, N+l and N+2.
  • an xy attenuating body distribution 39 covers the EUV light pulse N+l .
  • Said EUV light pulse N+l is therefore attenuated two-dimensionally, that is to say in the x- and y-directions at defined points, namely where the attenuating bodies 28 are currently present.
  • the position of the attenuating bodies 28 is predefined by corresponding temporal driving of the valves 29 of the ejection channels 27.
  • an attenuating body distribution 40 that attenuated the temporally preceding EUV light pulse N+2 has already flown a corresponding y-distance further in the direction toward the collecting device 32.
  • a further attenuating body distribution 41 has already left the ejection channels 27 and flies toward the cross section of the illumination light beam 3 in order to be there when the succeeding EUV light pulse N arrives.
  • the driving in the case of the attenuating body distribution according to figure 5 is such that the EUV light pulses N, N+l and N+2 see the same attenuating body distribution.
  • An x-position of the attenuating bodies 28 is predefined by the driving of the valve 29 of the ejection channel 27 present in the receptive column.
  • a y-position is predefined by corresponding temporal driving of the valve 29 of the ejection channel 27.
  • either the same ejection channel 27 can be driven in very close succession or different ejection channels 27 of the same column, that is to say ejection channels 27 which are spaced apart from one another in the z-direction and which have the same or an at least closely adjacent x-coordinate, can be driven with a corresponding temporal delay.
  • a density of the attenuating bodies 28 in the y-direction is therefore defined by an attenuating body flight time.
  • the relationship y dT / v holds true, wherein v is a flight velocity of the attenuating bodies 28.
  • Attenuating body distribution (cf. attenuating body distributions 39, 40, 41 in figure 5) of approximately 10 ⁇ .
  • One of the ejection channels 27 can produce 25 000 of the attenuating bodies 28 per second.
  • the correction device 23 operates as follows: the detection device 36 measures an actual intensity distribution of the illumination light beam 3 either only over the x-direction or over the entire beam cross section, that is to say over the x- and y-directions. This actual intensity distribution is com- pared with a predefined desired intensity distribution. This comparison takes places in the control device 30. Depending on the result of this comparison, the control device 30 drives the corresponding valves 29 of the ejection channels 27 of the ejection device 26 and predefines a corresponding attenuation of the illumination light beam 3 by means of the attenuating body distribution produced over the cross section of the illumination light beam 3.
  • the attenuating bodies 28 attenuate the EUV illumination light beam 3 in each case locally by absorption or scattering.
  • This attenuation can be predefined over the x-direction or else two-dimensionally, that is to say over the x- and y-directions in a defined manner.
  • the correction device 23 for example thermal drifts in the illumination system 24 or an instability of the light source 2 can be corrected.
  • FIG. 9 A further embodiment of an illumination system for use in a projection exposure apparatus and two further embodiments of correction devices for influencing the intensity of the illumination beam of the illumination system are described below with reference to figures 9 to 1 1.
  • Components cor- responding to those which have already been explained above with reference to figures 1 to 8 bear the same reference numerals and will not be discussed in detail again.
  • the projection exposure apparatus 40a which can be used instead of the projection exposure apparatus 1 according to figure 1 , some optical components under figure 9 are illustrated schematically as refractive rather than reflective components. Insofar as such refractive components are actually used, the projection exposure apparatus 40a is operated with illumination or imaging light 3 having wavelengths in the deep ultraviolet range (DUV or VUV).
  • DUV deep ultraviolet range
  • a Cartesian xyz coordinate system is reproduced in figures 9 to 1 1.
  • the x-direction runs perpendicularly to the plane of the drawing and into the latter.
  • the y-direction runs upward in figure 9.
  • the z-direction runs toward the right in figure 9.
  • a scanning direction of the projection exposure apparatus 40a runs in the y-direction, that is to say perpendicularly to the plane of the drawing in figure 9.
  • the majority of the optical components of the projection exposure apparatus 40a are lined up along an optical axis 41a running in the z-direction.
  • the optical axis 41a can also be folded in ways other than that shown in figure 9, in particular in order to make the projection exposure apparatus 40a compact.
  • the illumination system of the projection exposure apparatus 40 serves for the defined il- lumination of the object field or illumination field 18 in the object plane or reticle plane 16, in which is arranged a structure to be transferred in the form of a reticle (not illustrated in more specific detail).
  • the illumination system 24 comprises the primary light source 2 and the illumination optical unit 24 with the optical components for guiding the illumination or imaging light 3 toward the object field 18.
  • the primary light source 2 is an ArF laser having an operating wavelength of 193 nm, the illumination light ray of which is aligned coaxially with respect to the optical axis 41.
  • Other UV light sources for example an F 2 excimer laser having an operating wavelength of 157 nm, a KrF excimer laser having an operating wavelength of 248 nm and primary light sources having higher or lower operating wavelengths are likewise possible.
  • a ray of the illumination light 3 that comes from the light source 2 and has a small rectangular cross section firstly impinges on a beam expanding op- tical unit 42, which generates an emerging ray of the illumination light 3 comprising substantially parallel light and having a larger rectangular cross section.
  • the beam expanding optical unit 42 can contain elements that reduce undesirable effects of the coherence of the illumination light 3.
  • the illumination light 3 substantially parallelized by the beam expanding opti- cal unit 42 subsequently impinges on a micromirror array (multi mirror array, MMA) 43 for generating an illumination light angular distribution.
  • the micromirror array 43 has a multiplicity of rectangular individual mirrors 44 arranged in an xy grid.
  • Each of the individual mirrors 44 is con- nected to an associated tilting actuator 45.
  • Each of the tilting actuators 45 is connected via a control line 46 to a controller 47 for driving the actuators 45.
  • the actuators 45 can be driven independently of one another by means of the controller 47.
  • Each of the actuators 45 can set a predefined x-tilting angle (tilting in the xz plane) and, independently thereof, a y-tilting angle (tilting in the yz plane) of the individual mirror 44, such that an angle AS X of reflection of an illumination light partial beam 48 reflected by the associated individual mirror 44 in the xy plane and correspondingly an angle AS X of reflection (not illustrated in the drawing) in the xz plane can be predefined.
  • the MMA 43 therefore constitutes a light distribution device for generating a two-dimensional illumination light intensity distribution.
  • a first raster arrangement 51 of a raster module 52 Arranged in the region of the first illumination plane 50 is a first raster arrangement 51 of a raster module 52, which is also designated as a fly's eye condenser.
  • Angles of incidence E y in the yz plane (cf. figure 9) and ER X in the xz plane (not illustrated in the drawing) of the illumination light 3 on the raster module 52 are correlated with the angles of reflection AS y (cf. figure 9), AS X (not illustrated in the drawing) of the illumination light par- tial beams 48 from the MMA 43 and/or the location from which the respective illumination light partial beam 48 emerges from the MMA 43, that is to say the respective individual mirror 44.
  • This correlation is predefined by the Fourier lens element arrangement 49.
  • the locations of im- pingement of the illumination light partial beams 48 on the first raster arrangement 51 are directly correlated with the angles of reflection AS X , AS y of the illumination light partial beams 48 from the MMA 43 since the Fourier lens element arrangement 49 approximately results in a conversion of angles into spatial coordinates.
  • the angles of incidence ER X , ER y of the illumination light partial beams 48 on the raster module 52 are directly correlated with the positions of the illumination light partial beams 48 on the MMA 43, that is to say with the individual mirror 44 from which the respective illumination light partial beam 48 emerges, since both the use of a Fourier lens element arrangement 49 and the use of a condenser 49 result in a conversion of spatial coordinates into angles.
  • the raster module 52 serves for generating a spatially distributed arrangement of secondary light sources, that is to say of images of the primary light source 2, and thus for generating a defined illumination angle distribution of the illumination light emerging from the raster module 52.
  • a second raster arrangement 54 is arranged in a further illumination plane 53.
  • the illumination plane 50 is in or in proximity to a front focal plane of individual elements of the second raster arrangement 54.
  • the two raster arrangements 51, 54 constitute a fly's eye condenser of the illumination optical unit 25.
  • the further illumination plane 53 is a pupil plane of the illumination system 24 or is adjacent to a pupil plane of the illumination system 24.
  • the raster module 52 is therefore also designated a field defining element (FDE).
  • Angles of reflection A y in the yz plane (cf. figure 9) and AR X in the xz plane (not illustrated in the drawing) at which the illumination light partial beams 48 leave the second raster arrangement 54 are uniquely assigned to a spatial region in the object field 18 on which the respective illumination light partial beam 48 impinges on the object field 18.
  • a further condenser 55 Disposed downstream of the raster module 52 is a further condenser 55, which is also designated as a field lens element. Together with the second raster arrangement 54 the condenser 55 images the first illumination plane 50 into a field intermediate plane 56 of the illumination system 24.
  • a reticle masking system (REMA) 57 can be arranged in the field intermediate plane 56, said system serving as an adjustable shading diaphragm for gen- erating a sharp edge of the illumination light intensity distribution.
  • a downstream lens 58 images the field intermediate plane 56 onto the reticle, that is to say the lithography original, which is situated in the reticle plane 16.
  • the reticle plane 16 is imaged onto the wafer or image plane 21 onto the wafer (not illustrated in figure 9), which is intermittently or continuously displaced in the scanning direction
  • the raster construction and the function of the raster module 52 correspond, in principle, to what is described in WO 2007/093433 Al .
  • the field intermediate plane 56 coincides with an ejection channel plane of a correction device 59 for the two-dimensional influencing of the intensity of the illumination light beam 3.
  • the function of the correction device 59 corresponds to that of the correction device 23 already explained above in connection with figures 1 to 8.
  • Components of the correction device 59 which correspond to those of the correction device 23 already explained above bear the same reference numerals and will not be discussed in detail again.
  • FIG 9 Only an entrance window 60 and an exit window 61 of the correction device 59 are illustrated in figure 9; further details of said correction device will become apparent with reference to figure 10. Both the entrance window 60 and the exit window 61 are transmissive to the illumination or imaging light 3.
  • Part of the correction device 59 is an evacuated chamber 62, through which runs the trajectory of the attenuating bodies 28 between the ejection device 26 and the collecting device 32.
  • the entrance window 60 and the exit window 61 are inserted in a pressure-tight fashion into chamber walls of the evacuated chamber 62.
  • the ejection device 26 and the collecting device 32 are contained in the evacuated chamber 62.
  • the discharge line 34 and a return of the attenuating body material from the collecting device 32 toward the ejection device 26 are not illustrated in figure 10. Such a return can be routed within the evacuated chamber 62 or leads through pressure-tight passages through the chamber walls.
  • the ejection channel plane 56 is perpendicular to the plane of the drawing in figure 10. In said ejection channel plane, the trajectories 38 of the ejection channels run parallel to one another. In figure 10, the trajectories 38 run vertically from top to bottom.
  • an intensity distribution of the illumination light beam 3 in the field intermediate plane 56 and thus a corresponding intensity distribution in the object plane 16 can once again be prede- fined two-dimensionally .
  • the correction device 59 can also be used in the projection exposure apparatus 1 according to figures 1 to 8. Accordingly, the correction device 23 according to figures 1 to 8 can also be used in the projection exposure ap- paratus 40 according to figure 9.
  • Figure 1 1 shows a further embodiment of a correction device 63, which can be used instead of the correction devices 23 and 59, respectively.
  • the ejection channel plane 56 runs in the plane of the drawing in figure 1 1.
  • the ejection channel plane 56 can once again coincide with the field intermediate plane of the illumination system 24 according to figure 9 or can be adjacent to the object plane 16, as in the embodiment according to figures 1 to 8.
  • a plurality of ejection channel planes 56 spaced apart from one an- other in the z-direction can also be present.
  • a ray direction of the illumination light beam 3 runs perpendicularly to the plane of the drawing in figure 1 1.
  • the ejection device 26 of the correction device 63 is subdivided into a plurality of partial ejection units 64, which in each case eject the attenuating bodies 28 from an ejection channel 27 along a trajectory 38 within the ejection channel plane 56.
  • Figure 1 1 illustrates by way of example a plurality of the partial ejection units 64 and the ejection channels 27 thereof and the trajectories 38 of the attenuating bodies 28 ejected via said ejection channels 27.
  • the attenuating bodies 28 are therefore injected from different marginal points at a plurality of injection angles.
  • the partial ejection units 64 are arranged in a manner distributed around the illumination light beam 3. Only some of the partial ejection units 64 are illustrated in figure 1 1. In actual fact, so many of the partial ejection units 64 are arranged around the cross section of the illumination light beam 3 that the trajectories 38, partly with higher, partly with lower trajectory density, reach practically every location within the cross section of the illumination light beam 3 in the ejection channel plane 56.
  • Each of the partial ejection units 64 is assigned a corresponding partial col- lecting unit of the partial collecting device 32 for the attenuating bodies 28. Said partial collecting units, in the same way as the discharge lines for the attenuating material and possibly return to the partial ejection units, are not illustrated in figure 1 1.
  • two-dimensional intensity distribution of the illumination light beam 3 can be predefined by means of the respective local attenuation of the illumination light beam 3 by the attenuating bodies 28 in a defined manner, analo- gously to what has already been explained above in connection with the correction device 23 according to figures 1 to 8.
  • structured components in particular semiconductor components in the form of microchips, for example memory chips, can now be produced by means of the projection exposure apparatus 1 or 40, respectively.
  • the wafer 22 is provided, on which a layer composed of a light-sensitive material is at least partly applied.
  • the reticle 17 comprising the structures to be imaged is provided.
  • the projection exposure apparatus 1 By means of the projection exposure apparatus 1, at least one part of the reticle 17 is then projected onto a region of the layer of the wafer 22.
  • the micro- or nanostruc- tured component is then produced by developing the light-sensitive layer.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif de correction (23) qui sert à modifier l'intensité d'un faisceau (3) de lumière d'éclairage d'un système d'éclairage d'un appareil d'exposition par projection. Le dispositif de correction (23) comprend un dispositif d'éjection (26) qui comprend au moins un canal d'éjection (27) pour des corps d'atténuation (28) qui atténuent la lumière d'éclairage. Un dispositif de collecte (32) sert à collecter les corps d'atténuation éjectés (28). Le dispositif d'éjection (26) et le dispositif de collecte (32) sont conçus et agencés de manière que le faisceau de lumière d'éclairage (3) passe à travers une trajectoire (38) des corps d'atténuation (28) entre le dispositif d'éjection (26) et le dispositif de collecte (32). Un dispositif de commande (30), qui est relié par signalisation (31) au dispositif d'éjection (26) sert à prédéfinir des instants d'éjection pour éjecter dans chaque cas au moins un corps d'atténuation (28) dudit au moins un canal d'éjection (27). Le résultat est un dispositif de correction destiné à modifier l'intensité d'un faisceau de lumière d'éclairage, qui permet une meilleure modulation spatiale en comparaison avec les dispositifs de correction connus.
PCT/EP2012/071675 2011-11-23 2012-11-02 Correction d'intensité d'un faisceau lumineux WO2013075923A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161563084P 2011-11-23 2011-11-23
DE102011086944.1A DE102011086944B4 (de) 2011-11-23 2011-11-23 Korrekturvorrichtung zur Beeinflussung einer Intensität eines Beleuchtungslicht-Bündels
US61/563084 2011-11-23
DE102011086944.1 2011-11-23

Publications (1)

Publication Number Publication Date
WO2013075923A1 true WO2013075923A1 (fr) 2013-05-30

Family

ID=48221919

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/071675 WO2013075923A1 (fr) 2011-11-23 2012-11-02 Correction d'intensité d'un faisceau lumineux

Country Status (2)

Country Link
DE (1) DE102011086944B4 (fr)
WO (1) WO2013075923A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014222884A1 (de) * 2014-11-10 2016-05-25 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung für ein Projektionsbelichtungssystem

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1225481A2 (fr) 2001-01-23 2002-07-24 Carl Zeiss Semiconductor Manufacturing Technologies Ag Collecteur pour un système d'illumination avec une longueur d'onde de 193 nm
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
JP2006080108A (ja) 2004-09-07 2006-03-23 Nikon Corp 露光装置及びマイクロデバイスの製造方法
US20060262288A1 (en) 2005-05-19 2006-11-23 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
WO2007093433A1 (fr) 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Système d'éclairage pour la MICRO-LITHOGRAPHIE, équipement d'éclairage par projection équipé d'un tel système d'éclairage
DE102006042452A1 (de) 2006-02-17 2007-08-30 Carl Zeiss Smt Ag Beleuchtungssystem für die Mikro-Lithographie, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
US20080302980A1 (en) * 2007-06-07 2008-12-11 Asml Netherlands B.V. Extreme ultra-violet lithographic apparatus and device manufacturing method
US20090040495A1 (en) 2005-10-03 2009-02-12 Carl Zeiss Smt Ag Illumination system including an optical filter
WO2009087805A1 (fr) 2008-01-11 2009-07-16 Nikon Corporation Modulateur spatial de lumière, système optique d'éclairage, dispositif d'alignement et procédé de fabrication de dispositif
DE102009025362A1 (de) 2008-08-01 2010-02-04 Carl Zeiss Smt Ag Variabel einstellbare Streuscheibe für Projektionsbelichtungsanlage
US20100183987A1 (en) * 2006-12-08 2010-07-22 Canon Kabushiki Kaisha Exposure apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508487B2 (en) * 2000-06-01 2009-03-24 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20090218521A1 (en) * 2008-02-08 2009-09-03 Nikon Corporation Gaseous neutral density filters and related methods

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
EP1225481A2 (fr) 2001-01-23 2002-07-24 Carl Zeiss Semiconductor Manufacturing Technologies Ag Collecteur pour un système d'illumination avec une longueur d'onde de 193 nm
JP2006080108A (ja) 2004-09-07 2006-03-23 Nikon Corp 露光装置及びマイクロデバイスの製造方法
US20060262288A1 (en) 2005-05-19 2006-11-23 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
US20090040495A1 (en) 2005-10-03 2009-02-12 Carl Zeiss Smt Ag Illumination system including an optical filter
WO2007093433A1 (fr) 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Système d'éclairage pour la MICRO-LITHOGRAPHIE, équipement d'éclairage par projection équipé d'un tel système d'éclairage
DE102006042452A1 (de) 2006-02-17 2007-08-30 Carl Zeiss Smt Ag Beleuchtungssystem für die Mikro-Lithographie, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
US20100183987A1 (en) * 2006-12-08 2010-07-22 Canon Kabushiki Kaisha Exposure apparatus
US20080302980A1 (en) * 2007-06-07 2008-12-11 Asml Netherlands B.V. Extreme ultra-violet lithographic apparatus and device manufacturing method
WO2009087805A1 (fr) 2008-01-11 2009-07-16 Nikon Corporation Modulateur spatial de lumière, système optique d'éclairage, dispositif d'alignement et procédé de fabrication de dispositif
DE102009025362A1 (de) 2008-08-01 2010-02-04 Carl Zeiss Smt Ag Variabel einstellbare Streuscheibe für Projektionsbelichtungsanlage

Also Published As

Publication number Publication date
DE102011086944A1 (de) 2013-05-23
DE102011086944B4 (de) 2015-07-23

Similar Documents

Publication Publication Date Title
US9134613B2 (en) Illumination and displacement device for a projection exposure apparatus
US9946162B2 (en) Controller for optical device, exposure method and apparatus, and method for manufacturing device
KR102291997B1 (ko) Euv 투영 리소그래피용 조명 옵틱스 및 이러한 조명 옵틱스를 갖는 광학 시스템
EP1355194B1 (fr) Appareil d'exposition par projection et méthode de fabrication d'un dispositif
JP6270166B2 (ja) リソグラフィ投影露光装置の照明視野にわたる照明強度を予め定めるための照明強度補正デバイス
KR102013479B1 (ko) Euv 투영 리소그래피 투영 노광 장치용 조명 시스템
EP2583141B1 (fr) Système d'éclairage optique pour la microlithographie et système d'exposition par projection ayant un système d'éclairage optique de ce type
US11800626B2 (en) Shock wave visualization for extreme ultraviolet plasma optimization
WO2013139635A1 (fr) Unité optique d'éclairage pour lithographie par projection d'ultraviolets extrêmes
US20230333486A1 (en) Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device
US20170082929A1 (en) Illumination apparatus for a projection exposure system
WO2013075923A1 (fr) Correction d'intensité d'un faisceau lumineux
US7023885B1 (en) Laser apparatus and method for controlling the same
WO2005015310A2 (fr) Systeme d'eclairage pour un appareil d'exposition par projection microlithographique
WO2016058826A1 (fr) Module de source de rayonnement
WO2013075878A1 (fr) Appareil lithographique et procédé de fabrication de dispositif

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12783577

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12783577

Country of ref document: EP

Kind code of ref document: A1