WO2013075712A1

WO2013075712A1 - Solid body surfaces from two and multiple material systems with composite nanostructures from metals, semiconductors or insulators

Info

Publication number: WO2013075712A1
Application number: PCT/DE2012/200077
Authority: WO
Inventors: Danilo BÜRGER; Heidemarie Schmidt; Ilona Skorupa
Original assignee: Helmholtz-Zentrum Dresden - Rossendorf E.V.
Priority date: 2011-11-22
Filing date: 2012-11-22
Publication date: 2013-05-30
Also published as: DE102011055604A1

Abstract

The invention relates to functionalized solid body surfaces with composites from two and multiple material systems from metals, semiconductors and insulators or foreign atoms, which have a defined chemical composition based on the nanometer and micrometer-length scale for novel composite nano and microstructures.

Description

Functionalized solid surfaces of two- and multi-component systems with composite nanostructures of metals, semiconductors or insulators

Technical area

The invention relates to functionalized solid surfaces of metals,

Semiconductors and insulators, which have a defined chemical composition on the nanometer and micrometer length scale.

State of the art

The thermal treatment of solids is used to the crystalline

Improve properties of the solid surfaces to apply coatings on the solid surface or to incorporate impurities at substitutional lattice sites.

The thermal treatment of solid surfaces includes Rapid Thermal Annealing (RTA) on the second-time scale, Flash Lamp Annealing (FLA) on the millisecond to microsecond timescale, and pulsed laser Annealing (PLA - pulsed

Laser annealing) on the nanosecond to microsecond time scale.

The advantage of the PLA results from the fact that after absorption of the laser light of a defined wavelength and energy density in the solid surface emitted by the laser light electrons on a time scale of 1 ps to 1 ns deliver the absorbed energy to the atomic lattice of the solid. This takes the

Lattice temperature of the solid according to the Bose-Einstein statistics with a heating rate of up to 10 ¹¹ K / s.

The time dependence of the lateral and vertical temperature profile is determined by the locally applied PLA parameters and by the dependent on the properties of the solid heat transport in the heated solid surface during and after the thermal treatment with PLA.

If the solid surface of miscible and immiscible two- and

Formed Mehrstoffsystemen, and these are heated by thermal treatment above its melting temperature, then with complete miscibility and highly segregating two- and multi-material systems during recrystallization lateral and vertical segregation of the two- and multi-component systems occur.

Each phase change is accompanied by a change in thermodynamic quantities, latent heat and specific heat. Any change in the composition of a two- and multi-component system is accompanied by a change in the crystal structure.

Melt or solid coexist in the region of the miscibility gap

different bi- and multi-component systems.

Non-variant reactions are those in which in binary systems three phases are in equilibrium.

As a eutectic reaction is the simultaneous conversion of a melt in two

Solid body of different two- and multi-component systems at a high critical temperature and at a high critical pressure called.

For example, an irregular, lamellar eutectic microstructure of Si plates in an Al matrix forms when an AlSi binary system is thermally treated and has a low solidification rate of less than 0.1 m / s (RTA, FLA). The plate spacing depends on the solidification rate.

In Peritektika the peritectic temperature is always between the

Melting temperatures of the two- and multi-component systems involved. Peritectic reactions are very slow because they require solid-state diffusion and are expected for slow-cooling (RTA, FLA) thermal treatments.

As a monotectic reaction, the decay of two melts in a solid and in a melt at exactly the monotectic temperature is called.

Monotectic reactions require a high temperature gradient and small solidification rates.

Dotants in semiconductor materials can be locally thermally activated by thermal treatment by means of PLA. Makarovsky [Makarovsky, O. u. a .: Direct writing of nanoscale light-emitting diodes. Advanced Materials. 22 (2010), 3176-3180.] Showed this for manganese acceptors in the p-type GaMnAs layer of nanoscale light-emitting diodes.

EP 1 738 402 B1 describes the production of solar cells, especially the dilution of dopants, also called uniform redistribution of dopants. DE 10 2010 044 480 A1 describes the production of thin-film solar cells, the recrystallization of an amorphous first layer of a semiconductor material and the epitaxial growth of a layer-wise applied and recrystallized second layer of a second semiconductor material. The dopants should not redistributed and an unstructured seed layer is used for uniform recrystallization.

The time dependence of the temperature profile and the thermal diffusion under

Consideration of the enthalpy of fusion and recrystallization heat is subject to significant delays compared to the time dependence of the temperature profile in the unfused material.

Typically, semiconductors in the PLA treatment become about 1000 nm

melted. The heating of the semiconductor can also take place at a depth of 10 μηι to 50 μηι, wherein the temperature in the deeper areas of the semiconductor is much lower, so possibly lying there

temperature sensitive materials, e.g. Polymers, should not be destroyed by heating.

The melting point for the semiconducting solids, such as silicon and GaAs, is typically up to 1000 nm. In poorly thermally conductive

Support materials for the solid, such as glass or sapphire, the melting depth of solids can be greater and is for semiconducting

Solid state layer structures with silicon or GaAs at about 3 to 5 μηι.

Functionalized solid surfaces, for example active areas in

Semiconductor devices, electrically conductive oxide layers in transparent

Electronic components, metal magnetic single and

Multilayer structures in magnetooptical sensor materials or in

Tunnel magnetoresistance devices as well as superconducting

High-temperature oxide layers have a typical thickness of 0 to 2000 nm and can thus be completely or partially thermally treated by means of PLA.

Lasers with picosecond laser pulses must to achieve the

Phononenbesetzung, which is required for melting, have an extremely high surface power density. In this case, usually only thin, near-surface layers of the solid with a thickness of typically 10 nm

be melted. Greater melting depths can not be achieved, since the solids required at the required surface power density at the

Surface increasingly worn (abladiert) is. Ablation is used in pulsed laser plasma deposition to ablate metallic, semiconducting and oxide (ceramic) targets. The ablation rate of atoms and / or ions from the solid surface depends on the species of the atomic units of the solid and can be in ablated solid surfaces, which consist of atoms different species exist, leading to a change in stoichiometry, especially in the Festkörperflächenähe.

Pulsed lasers with microsecond laser pulses require to reach the

Phonon occupation for the melting of the solid surface only a low surface power density. However, in thermal treatment with microsecond laser pulses, the time during which the solid is heated and dissipated during heat energy from the solid surface to adjacent colder regions of the solid is up to three orders of magnitude compared to PLA treatment with nanosecond laser pulses elevated. This requires a higher energy density.

In the thermal treatment with FLA, the solid surface or - back side is preheated by thermal treatment and thus the thermal stress during spike annealing (peak healing) of the

Solid surface or back reduced. The preheating of the solid is also advantageous because in the thermal treatment (spike annealing) lower energy densities are needed, a better process control is possible and thermal stresses can be reduced.

Foreign atoms getter (bind or trap) impurities in solids

during the thermal treatment. For example, S.M. Myers [Myers, S.M. a .: Mechanisms of transition metal gettering in Silicon. Journal of Applied Physics. 88 (2000), pp. 3795-3819], as the phosphorus getter in

contaminated silicon is used to enrich metal atoms in phosphorus doped regions of silicon in which the metal atoms have an increased solubility and to bind by forming precipitates.

In metallic binary systems with complete solubility

(Substitutionsmischkristalle) the foreign atoms are completely dissolved in the solid state. Typical metallic substitution mixed crystals are the alloys iron-chromium, iron-nickel, gold-copper, gold-silver and copper-nickel.

In metallic binary systems with complete insolubility (crystal mixture of two phases), e.g. Iron-lead, although in the melt, the two phases are dissolved in each other, but segregate completely during crystallization and form a crystal mixture of two phases, each phase of only one

Component exists and is completely free from the other component. The solubility of non-isovalent impurities in semiconductors (Si: P, Si: Mn, Ge: Mn) in the solid state is typically 10 ¹⁶ to 10 ²¹ impurities per cm ³ .

The solubility of isovalent impurities in semiconductors (ZnO: Co, Si: Ge) in

solid state of aggregation is typically 10 ²¹ to 10 ²² foreign atoms per cm ³ . Mixed crystals can be formed.

The solubility of foreign atoms and foreign molecule groups in insulators is complete for certain phases, eg Cr ₂ 0 ₃ in Al ₂ 0 _{3 form} a homogeneous mixed phase with variable composition.

The solubility of foreign atoms and foreign molecule groups in insulators is incomplete for certain phases, for example, form Si0 ₂ and Na ₂ 0 in the crystalline state numerous defined phases.

The solubility of foreign atoms and foreign molecule groups in metals, semiconductors and insulators in the liquid state is increased compared to the solubility of impurities in solids in the solid state.

If, after the thermal treatment, the concentration of foreign atoms in a solid in the solid state is greater than the solubility of the foreign atoms in the solid, then the distribution of the foreign atoms is in a metastable state. The redistribution of foreign atoms in a solid in the solid

Physical state, which is in a metastable state, is dependent on the diffusion parameters of the foreign atoms in the solid on very long time scales. For example, place at room temperature by extrapolation of the diffusion coefficient manganese in GaAs: Mn manganese only a space-changing operation in the average of all 10 ²⁰ seconds instead. A stable

Manganese distribution in GaAs: Mn is theoretically achieved only after even longer times at room temperature. At 600 to 700 ° C, the phase separation can be shortened to a few seconds due to manganese exchange processes.

DE 10 2007 017 788 A1 describes the preparation of a doping zone in

Power semiconductors with a field stop layer by performing at least a short-term first temperature treatment with ΤΊ and a relatively longer temperature treatment with T ₂ , wherein Ti is greater than T ₂ and wherein the

Dopant concentration between 1 ^χ 10 ¹² / cm ³ and 1 ^χ 10 ¹⁵ / cm ³ may be. Atomic, molecular and ionic species of a process gas can during the thermal treatment in areas of a solid in the liquid

State of aggregation, which are in contact with the process gas to be installed in these areas of the solid. This causes a change in the chemical composition and stoichiometry of the solid areas which are in contact with the process gas. For example, a silicon surface that is thermally treated in an oxygen-containing process gas is oxidized near the surface.

US 5,918,140 B describes the melting and the irradiation of a

Solid surface under a gas atmosphere, which in the

Solid surface to be incorporated dopants contains. Thus, uniform distribution of the dopants in the recrystallized solids can be achieved with a maximum surface concentration of about 8 x 10 ¹⁴ cm ^"2. In addition, a medium can be applied to the solid body that contains the dopant. The gas atmosphere reduces the evaporation of dopant. Amorphous Solids can recrystallize under the action of laser light, and crystalline solids can amorphize under the action of laser light, for example, silicon amorphizes above a recrystallization rate of 10 to 15 m / s (depending on crystal orientation) and germanium above one

Recrystallization rate of 1, 7 to 4.0 ms ^"1 (depending on the crystal orientation).

The recrystallization rate during the PLA treatment depends on

Solid bodies from the orientation of the liquid-solid interface. In silicon, the recrystallization rate is greatest for a (1 1 1) interface orientation and decreases with orientation (1 12), (001), and (01 1).

Convective flows may occur within a molten solid due to density differences along temperature gradients and surface tensions. When the thickness of the melted

Solid surface d ₀ 'is smaller than the capillary length l _c , then dominate

Surface tension effects. The capillary length l _c indicates how much a liquid, depending on the capillary diameter and the density of the liquid and the surrounding medium, increases at a given contact angle, thereby compensating for the effect of the surface tension effects.

Quantum trenches and quantum barriers can be selectively mixed locally by thermal treatment by means of PLA. Stanowski [Stanowski, R. et al .: Laser rapid thermal annealing of quantum semiconductor wafers: a one step bandgap engineering technique. Applied Physics A: Materials Science & Processing. 94 (2009), No. 3, 667-674.] Showed this for InGaAsP / InP quantum well microstructures.

Object of the invention

The object of the invention is to functionalized solid surfaces

Indicate metals, semiconductors and insulators for novel materials in metal semiconductor and ceramic technology. The novel materials should have a defined chemical composition on the nanometer and micrometer length scale.

Main features of the solution

Foreign atoms are during a thermal treatment with choice of

correct redistribution parameters locally redistributed (local phase separation) and have in areas which have a different temperature than adjacent areas, a different concentration of impurities than the adjacent areas. The phase separation can be caused by local laser irradiation of the solid or by self-organized local redistribution.

Before the thermal treatment on the nanosecond microsecond timescale fully amorphized layers with impurities can (under a

Process gas) are completely recrystallized as a single crystal.

Before the thermal treatment on the nanosecond microsecond time scale incompletely amorphized solid surfaces can recrystallise (under a process gas) as polycrystallite, if the energy density is just sufficient to melt only the amorphous regions of the incompletely amorphized solid surface.

The interfacial structure of the amorphous / crystalline interface may be designed, for example, by using prestructured crystalline substrate for low temperature growth of amorphous thin films on or through it

Use of ions of specific energy and charge during implantation and amorphization of the solid surface.

The interface may be designed during implantation with an ion type.

With a different ion type, foreign atoms can be targeted in the same time

Solid surface be distributed. The implantation can be done through masks or cover layers of different thicknesses. Getter regions for impurities in the solid surface are defined during low temperature growth and / or during implantation. The

Getter areas have a higher melting temperature than the surrounding solid state material and have a much lower solubility for impurities in the solid state than the surrounding solid state material in the liquid state.

The depth distribution of the foreign atoms before the thermal treatment on the

Nanosecond microsecond time scale under a process gas accounts for the snow plowing effect during thermal processing. The redistribution of the foreign atoms in the liquid phase of the solid can be achieved by external

magnetic and / or electric fields are controlled.

The lateral distribution of the foreign atoms before the thermal treatment on the

Nanosecond microsecond time scale under a process gas takes into account the crystal orientation-dependent recrystallization rate during the thermal treatment.

The surface of solid materials, which consists of several types of atoms

of which at least one atomic species in the liquid state of

Solid material is easily volatile, are completely covered by a Getterschicht and / or thermally treated under a process gas under pressure. For the thermal treatment in the roll-to-roll process of solid materials for the transparent electronics should be close to the triple point of the

Solid state material, for example, using Bernoulli's law with moving process gas to be worked.

It is important to prevent the change of stoichiometry and chemical

Composition of solid surfaces during thermal treatment by ablation and evaporation effects. The object of the task is also to reduce the thermal stress during the local redistribution of impurities in metals, semiconductors and insulators.

At the same time, the production of regularly arranged segregations of

Foreign atoms at different defined positions in the near-surface region of the solid can be described. Generated benefits or improvements over the prior art

Production of functionalized solid surfaces of metals, semiconductors and insulators with clustered and / or composite nanostructures in a defined with respect to its lateral and depth position range of

Solid surface by using structured interfaces between a crystalline or amorphous surface substrate and the impurity or surface layer with two- and multi-phase systems, by using defined lateral and depth getter regions in the impurity or surface layer, as well as local

Irradiation with laser light of a defined wavelength, pulse length and

Energy density for local heating, melting, recrystallization and

Redistribution of the foreign atoms in the layer with foreign atoms or the two- and multi-phase systems in the surface layer in the solid surfaces to be functionalized.

The atom-specific evaporation and ablation, which leads to a change in the

Stoichiometry of the solid leads in the heated near-surface region can be reduced by thermal treatment of the solid in a process gas, the relative velocity of the process gas and the solid and the flow rate of the process gas should be as large as possible. Atom specific evaporation and ablation is also reduced by the use of a capping layer with properties of a getter material.

The advantage of this production method is the high flexibility in the preparation of various chemical compositions for new PhaseChange materials (PCM), the integrability of the PhaseChange materials in germanium, silicon and germanium silicon technology when using multi-phase systems with Ge or silicon without damage to underlying areas, the low conductivity of the surface layer outside the segregated regions and (Fig. 5 c) the ability to specifically adjust the shape and volume of the PhaseChangeMaterials by an appropriate distribution of the multi-phase system in the surface layer, by the structuring of the cover layer and by the Laserausheilparameter. It eliminates the top-down processing step to define the phase change material. Furthermore, the write signal is used to reach the High Resistance State (HRS) and the Low Resistance State (LRS) in the

PhaseChangeMaterial better separated. The shape of the PhaseChangeMaterial determines the number of non-volatile writable states. The number of nonvolatile resistive states increase with increasing deviation of the shape of the PhaseChange material from the spherical shape.

The advantage of this production method in the production of support materials with a network of biocidal and biocompatible or biophilic areas is the transferability to arbitrarily shaped support materials, the integrability for support materials in the silicon and germanium technology, the structuring of selected areas in two- or three-dimensional support materials. The cell size d _{s of} the network can be determined before the thermal treatment by selecting the chemical composition of the multiphase system (A, B) in the

Surface layer (2m), the thickness of the surface layer d ₀ of

Laser Ausheilparameter be determined. After the thermal treatment, the overgrowth of the cell walls can be controlled by local application of heat to the electrically conductive cell walls of the network of biocidal material (Β '), as well as by local energy supply by light absorption in the network cells, the growth of biomaterial can be controlled in the network cells. One advantage is that the network can be produced over a large area and quickly, without damaging the underlying substrate (1).

The advantage of this production method in the production of defined SiGeC nanostructures for the integration of photonics in the silicon, germanium and silicon germanium technology is the producibility of regularly shaped clusters with novel optical and thermal properties. By the thermal treatment, the chemical composition of SiGeC-two and

Multiphase systems in quantum layers, quantum wires, quantum dots and quantum pyramids changed laterally and vertically.

The advantage of this manufacturing method in the production of carrier material for the preparation of thin, locally n- or p-doped carbon materials

(For example, graphene, graphite) by surface doping method is due to the fact that the lateral Dotierprofilierung of thin carbon materials through the surface layer (2m ') can be realized, thereby

Surface layer is useful for the subsequent production of multiple carbon materials and that the lateral composition variation on the nanometer and micrometer scale is periodically repeatable and thus hochskalierbar. Brief description of the illustrations

Fig. 1 describes the production of functionalized solid surfaces of

Metals, semiconductors and insulators with nanostructures before the thermal

Treatment and after the thermal treatment (Figure 1 a, b) and the production of functionalized solid surfaces with bimetallic and multicomponent systems of metals, semiconductors and insulators with impurities, which have a defined chemical composition on the nanometer and micrometer length scale before the thermal treatment and after the thermal treatment (Fig. 1 c, d).

Fig. 2 a, b shows the preparation of a functionalized solid with defined nanostructures at a distance d _t from the sample surface. Fig. 2 c, d, e) shows the preparation and use of defined SiGeC nanostructures for the integration of photonics in silicon technology.

Fig. 3 a, b, c illustrates the production of a network of magnetizable nanoparticles in an electrically conductive or in an insulating layer of a semiconductor and its use for the spin-polarized scattering of

Charge carriers and for the sorting of spin-polarized charge carriers in

Solids of semiconductor material during a current flow between structured contacts. Fig. 3 d, e, f illustrates the preparation of a network of biocidal nanoparticles and microparticles in an electrically conductive or in an insulating layer of a biophilic material to increase the adhesion of biomaterials to support materials.

4 a, b shows the production and use of a network of electrically polarizable nanoparticles in the diffusion region of solar cells for the sorting of photogenerated charge carriers. Fig. 4 c, d, e shows the preparation of a functionalized solid with defined nanostructures for

PhaseChange materials in an insulating matrix on the sample surface.

Fig. 5 a, b illustrates the production of magnetic, ferroelectric and

multiferroic clusters in the impurity layer with structural anisotropy. Fig. 5 c, d shows the modification of defined SiGeC nanostructures for the integration of photonics in silicon and germanium technology.

Fig. 6 shows the redistribution of components of one or more metallic multiphase systems in the surface layer (2) by local thermal

Treatment under a process gas. Fig. 7 illustrates the possibility of successively performing the deposition and thermal treatment of surface layers (2m ') on a substrate to prepare regions having different mixing phases (A, Α', B, B ', C, C).

Fig. 8 shows the redistribution of impurities in the layer by local

thermal treatment under a process gas.

Description of the invention

Solid with functionalized surface layer with locally on the nanometer and micrometer scale varying laterally and vertically distributed components of one or more two- and multi-phase systems after a partial separation of the components of the two- or multi-phase system by thermal treatment, wherein during a single thermal treatment lateral mixing of different two- and multi-phase systems is less than 500 nm and the maximum vertical mixing is less than 2000 nm.

Solid with functionalized surface layer of a maximum thickness smaller than 2000 nm with targeted locally inhomogeneous, redistributed by thermal treatment in the solid surface foreign atoms, the solubility of the impurities in the solid surface is low, ie less than 10 ²¹ foreign atoms per cm ³ , and the foreign atoms are locally present in high concentration, ie in the range of 1 to 30 at%.

The lateral mixing of different two-phase and multi-phase systems is less than 100 nm, preferably less than 50 nm and particularly preferably less than 10 nm.

After application of the functionalized surface layer and the thermal annealing of this functionalized surface layer further two-phase and multi-phase systems can be applied.

The two- and multi-phase system areas or the surface layer (2) are amorphous, amorphous-crystalline or crystalline and consist of at least one semiconductor material and / or at least one metallic material and / or at least one insulator material.

The settable composition or distribution of the impurities or compositions of the bicomponent and polyphase system regions in the functionalized surface layer becomes after the thermal treatment by the combination the mixtures of metallic, semiconducting and insulating material limited prior to the thermal treatment

Optionally, a cover layer may be applied to the surface layer, wherein the melting temperature of the cover layer 4 is preferably higher than the melting temperature of the amorphous, amorphous-crystalline or crystalline surface layer 2.

The components of the two- and multi-phase system or the amorphous, amorphous crystalline, or crystalline surface layer with impurities may form a network structure upon certain application of the surface layers.

In this case, network structure consists of biocidal network walls and biophilic network cells.

The solid is produced by the following steps:

a. Using a substrate 1 with optional structured surface, b. Production or application of all adjoining areas of the surface layer to be functionalized of amorphous, amorphous crystalline or crystalline material 2, wherein the areas may consist of different mixtures and any mixture of semiconductor materials and / or of metallic materials and / or of insulating materials with a maximum thickness d ₀ less than 2000 nm on the substrate and wherein the mixtures of metallic, semiconducting and insulating material may be miscible or immiscible or the layer contains impurities and wherein the solubility of the impurities in the amorphous, amorphous crystalline or crystalline surface layer is low, ie smaller as 10 ²¹ foreign atoms per cm ³ , and the foreign atoms are present in high concentration in the amorphous, amorphous crystalline or crystalline surface layer, ie in the range of 1 to 30at%.,

c. subsequent thermal treatment of the solid surface for targeted locally inhomogeneous redistribution of the mixtures or impurities of metallic, semiconducting and insulating material in the amorphous, amorphous crystalline or crystalline surface layer without or with the use of a process gas, wherein the functionalized surface layer is melted. In the preparation just described, an interface (3) can form between the substrate and the amorphous, amorphous-crystalline or crystalline surface layer (2) with foreign atoms.

Optionally, a cover layer can be applied before the thermal treatment, which can be removed after the thermal treatment together with the continuous segregated area on the surface of the surface layer 2 '.

If the surface layer or the amorphous, amorphous-crystalline or crystalline surface layer is prepared by growth with foreign atoms, it can be distributed laterally and vertically homogeneously and / or in clusters.

The amorphous-amorphous-crystalline surface layer 2 can be made of at least one mixture of semiconductor material and / or of metallic material and / or of insulator material or a combination of these mixtures, wherein one or more getter regions 5 can be introduced before the thermal treatment and whose melting temperature is higher than the melting temperature of the amorphous, amorphous-crystalline or crystalline surface layer 2 at the location of the getter regions 5.

If a laser is used for the thermal annealing, the registered energy density of the laser light used in thermal treatment of the properties of amorphous, amorphous crystalline and / or crystalline layer with impurities (2) or the surface layer (2) is determined and this energy density is less than 5 Jcm ^"2 per emitted laser pulse and the photon energy of the laser light used is above the band gap of the semiconductor

The backside of the substrate may be thermally treated to reduce thermal stresses.

To produce crystalline and / or amorphous nanostructures, one or more lasers of different wavelengths may be used locally in the thermal anneal.

The solid may be used as a new phase-change material prepared in the top-down process, wherein the shape of the phase-change material may vary between spherical and pyrimdal-tropic, and wherein the phase-change material having a shape deviating from the spherical shape has multiple resistance states. The solid can be used as a network with biocidal components (Β ') in the cell walls and biophilic or biocompatible components (Α') in the network cells to increase the adhesion of biomaterials to the support material, the mesh size being comparable to that of the biomaterial is.

The solid thus produced may be used as an optoelectronic device comprising nanopyramids, quantum dots, quantum wells, and quantum wells of SiGeC, SiGeSn, and SiSnC, wherein the electronic band gap of the composite nanostructures is smaller than the electronic band gap of the surrounding host material and wherein the emitted light can be emitted from the side edges light or perpendicular to the surface by using a getter as a waveguide, the solid state.

The solid according to the invention can be used as a carrier material for the production of thin, locally n- or p-doped carbon materials (for example graphene, graphite) by surface doping.

Another possible use of the solid according to the invention is as a network for spin-polarized scattering of charge carriers in electrically conductive or insulating layers of a semiconductor material, or for sorting photogenerated charge carriers in the diffusion region of solar cells, the networks of magnetizable and / or electrically polarizable nanoparticles (6 ') and / or magnetizable and / or electrically polarizable line paths (6 ") exist.

Furthermore, the solid according to the invention can be used as an optoelectronic component with ternary nanopyramids or quantum dots in semiconductor heterostructures, preferably InGaAs in GaAs / AIAs or SiGe in Si / Ge, wherein the component of the heterostructure having the higher melting temperature serves as the getter layer.

Another use is as a transparent optoelectronic device of intrinsically n-type oxides in which the solubility of acceptor-like impurities in the liquid phase during the thermal treatment in the process gas is extremely increased, so that the acceptor-like impurities after cooling on lattice sites of the Arrange solids.

Another possible use is as a sensor for electric or magnetic fields, wherein the solid in the surface layer (2) a Composite with anisotropic clusters and wherein the anisotropic clusters are electrically polarizable and / or magnetizable.

Furthermore, the solid body can be used as uniform / regular nanostructures, for example for nanoimprint lithography, wherein the nanostructures can be used directly as masks, or can be chemically specifically etched out of the solid and subsequently these etched out nanostructures are filled with other materials.

Detailed description of the embodiments

Fig. 1 a, b) shows the preparation of the functionalized solid surfaces of metals, semiconductors and insulators with nanostructures before the thermal

Treatment (2f) and after thermal treatment (2f). The semiconductor may be, for example, an element semiconductor (Ge, Si), an Ill-V semiconductor (GaAs, GaP, GaN) or an Il-Vl semiconductor (ZnTe, ZnO). The solid body comprises a substrate having a crystalline surface (1), on which an amorphous, amorphous crystalline or crystalline layer with impurities is applied or prepared, wherein an interface layer (3) is formed between these two layers, and this can be structured. The thickness d _{0 of} the amorphous, amorphous crystalline or crystalline layer with impurities (2f) is less than 2000 nm, and the lateral and vertical of the clustered and non-patterned impurities in the amorphous, amorphous crystalline or crystalline layer is determined in the preparation. In the amorphous, amorphous crystalline or crystalline layer (2f) one or more getter regions (5) are introduced whose melting temperature is higher than the melting temperature of the amorphous, amorphous crystalline or crystalline layer. On the amorphous, amorphous crystalline or crystalline layer, a cover layer (4) is applied, whose

Melting temperature is higher than the melting temperature of the amorphous, amorphous crystalline or crystalline layer. After the thermal treatment, the lateral and vertical of the impurity in the amorphous, amorphous crystalline or crystalline layer (2 ') is changed. The thermal treatment leads to

Melting the amorphous, amorphous crystalline or crystalline layer (2),

preferably also to a melting of the boundary layer (3), particularly preferably also to a melting of the bordering on the interface crystalline surface of the substrate (2 ") .The total thickness of the molten layers (2 ') and (2") is d ₀ '. Due to the thermal treatment, preferably under a process gas of velocity v _G , defined nanostructures (6 ') are produced by lateral and vertical redistribution of the foreign atoms. On the molten layer with impurities (2 ') can be caused by the thermal

Treatment and the Schneepflugeffekt a layer with clustered foreign atoms (7) are formed. Both the cover layer with properties of a getter material (4) and the layer with clustered impurities can be after the thermal treatment by physical or chemical etching of the

Solid body surface are detached.

Fig. 1 c, d) describes the production of functionalized solid surfaces with bi- and Mehrstoffsystemen of metals, semiconductors and insulators, which have a defined chemical composition on the nanometer and micrometer length scale before the thermal treatment (Fig. 1 c) and after the thermal treatment (Fig. 1 d). The multi-substance system may be, for example, SiGeC, GeSbTe, AIP, Ag-Cu-Mg. The solid body comprises a substrate having a crystalline surface (1 k) or having an amorphous surface (1 a), on which an amorphous, amorphous crystalline or crystalline surface layer having two- or multiphase systems (2) is applied or prepared, between them two layers forms an interface (3), and this can be structured. The thickness d _{0 of} the amorphous, amorphous crystalline or crystalline surface layer with two or more phase systems (2) is less than 2000 nm and the lateral and vertical distribution of different two- and multi-phase systems in the amorphous, amorphous-crystalline or crystalline surface layer (2) becomes of the preparation. In the amorphous, amorphous crystalline or crystalline surface layer (2) are one or more

Getter areas (5) introduced, the melting temperature higher than the

Melting temperature of amorphous, amorphous-crystalline or crystalline

Surface layer is. On the amorphous, amorphous-crystalline or crystalline

Surface layer is applied a cover layer (4) whose melting temperature is higher than the melting temperature of the amorphous, amorphous-crystalline or crystalline surface layer (2). After the thermal treatment, the lateral and vertical distribution of various two-phase and multi-phase systems in the amorphous, amorphous-crystalline or crystalline surface layer (2 ') is changed. The thermal treatment leads to the melting of the amorphous, amorphous-crystalline or crystalline surface layer (2), preferably also to a melting over the boundary surface (3), more preferably also to a melting of the boundary surface adjacent crystalline or amorphous surface of the substrate ( 1 ). The total thickness of the molten layers (2 ') and (2 ") is denoted d ₀ ' by the thermal treatment, preferably under a process gas which is at a velocity v _G relative to the surface layer 2 moved, defined nano- and microstructures of two and

Multiphase systems B 'produced by lateral and vertical redistribution of the two- and multi-phase systems. In the depth of the melted

Surface layer (2 ') can by the thermal treatment and the

Snow plowing effect for individual components of the two- and multi-phase system, a layer with a very high concentration of a component of a two- and multi-phase system (Β ') are formed. Both the cover layer with properties of a getter material (4) and the continuous segregated region on the surface of the layer 2 'with a very high concentration of individual

Components of a thickness d _d , after the thermal treatment by means of physical or chemical etching of the surface of the

Surface layer to be removed.

Fig. 2 a, b) shows the preparation of the solid with defined nanostructures at a distance d _t from the sample surface. In the layer with foreign atoms (2) has a continuous getter area (5) is introduced. The interface (3) between the amorphous, amorphous crystalline and / or crystalline layer (2f) and the crystalline surface substrate (1) is structured. During the thermal treatment of the solid melts to a depth of d ₀ 'and recrystallized. During the recrystallization across the interface (3), the structures of the interface (3) influence the recrystallization rate in the impurity layer (2f) and the lateral and vertical redistribution of impurities in the impurity layer (2) after the thermal treatment (2f ). Due to the

Snow plowing effect will be a large proportion of the foreign atoms during the

Recrystallization of the layer with impurities always transported in the liquid region of the layer with impurities (2f). Laterally, the transport of

Impurities may be different in the impurity layer (2f) and there may be areas with an increased concentration of foreign atoms in the impurity layer (2f) which is on the continuous Getterbereich (5) in the depth d of _t areas with clustered impurity (6 ') in the layer (2f) form. The shape of the regions of clustered impurity atoms (6 ') is mainly due to the distribution of impurities in the layer (2f) before the thermal treatment, the structure of the interface (3) and the distance d _t and

Properties of the continuous getter material and determined by the anisotropy of the recrystallization rate in the layer with impurities. Locally regularly arranged nanopyramids in semiconductors with clustered ones

Foreign atoms are used for a melting direction along the (1 1 1) - Crystal orientation expected. Island-shaped nanostructures are expected for a melting direction along the (100) crystal orientation. The regular arrangement of the nanostructures is determined by the pattern of the boundary layer (3). As a continuous getter layer, the component of heterostructures, for example AlAs in GaAs / AIAs heterostructures and Si in Si / Ge heterostructures, can be used which has a higher melting point. There may be regular fluctuations in the distribution of the foreign atoms in the

Solid state surface (InGaAs in GaAs, GeSi) can be prepared by complete thermal treatment without complete separation of the foreign atoms and the solid state material. Regularly formed clusters with novel optical, magnetic and transport properties can be produced. The thermal treatment changes the distribution of foreign atoms of high concentration and low solubility in quantum layers, quantum wires, quantum dots, and quantum pyramids laterally and vertically.

Fig. 2 c, d, e) shows the preparation and use of defined SiGeC nanostructures for the integration of photonics in silicon and germanium technology. The

Nanostructures may take the form of quantum dots and quantum pyramids and are formed at a distance d _t from the sample surface. For this purpose, a surface layer (2m) with locally on the nanometer and micrometer scale varying laterally and vertically distributed components of a multi-phase system (A, B) in the functionalized surface layer on a preferably

structured substrate (1) applied. In the surface layer (2m) a continuous getter area (5) is introduced at the depth d _t . The getter region may consist of a single continuous layer or of several, preferably two, continuous layers of a total thickness d _{g of} the superposed layers

Getter layers of preferably 5 to 50 nm exist. During the thermal treatment of the solid melts to a depth of d ₀ 'and recrystallized.

During recrystallization across the interface (3), the

Structures of the interface (3) and the recrystallization rate in the surface layer (2m) the lateral and vertical redistribution of the components (Α ', Β') of the SiGeC multiphase system. Due to the immiscibility of the SiGeC multiphase system, a large proportion of the Ge and C atoms during the recrystallization of the surface layer is always in the liquid range of

Surface layer (2m ') transported. Laterally, the transport of Ge and C atoms may be different and there may be areas in the surface layer (2m ') with an increased proportion of Ge and C atoms which form regions with clustered Ge and C-rich multiphase systems (Β ') in the Si-rich multiphase system (Α') at the continuous getter region (5) at depth d _t . The lateral and vertical extent of the regions with clustered Ge and C-rich multiphase systems (Β ') is mainly due to the lateral and vertical distribution of the Ge and C atoms in the surface layer (2m) prior to thermal treatment, through the structure the interface (3) through which

Distance d _t and the properties of the continuous getter area (5) and determined by the anisotropy of the recrystallization rate in the surface layer. Locally arranged GeC nanopyramides (Β ') in SiC (Α') are expected for a melting direction along the (1 1 1) crystal orientation. Island-shaped GeC nanostructures (Β ') in SiC (Α') are expected for a melting direction along the (100) crystal orientation. The regular arrangement of the nanostructures is determined by the structure of the boundary layer (3). Before the front side electrode (S) is applied, the cover layer (4) is physically removed together with the continuous segregated regions (Β ') adjacent to it. (Fig. 2 e).

As a continuous getter layer (5), components of heterostructures, for example, SiC in SiC / GeC heterostructures or Si in Si / Ge heterostructures, may be used, provided that they have a higher melting point than the surface layer (2m). The getter layer (5) may also be used as a waveguide for the light emitted by the GeC nanostructures (Β ') formed at a depth d _t . In this case, the emitted light (21) is transported to the ends of the waveguide. In addition, the material can be metallized. Furthermore, the getter layer (5) causes a band bending of the adjacent regions of the surface layer (2m '), so that upon application of an electrical voltage to the front-side electrode (S) and the back-side electrode (O) charge carriers are injected into the GeC nanostructures and radiantly recombine there ,

There may be regular fluctuations in the distribution of the components of the

Polyphase system (Α ', Β') can be produced without complete separation of the multiphase systems by thermal treatment.

The lateral and vertical distribution of the Si, Ge and C atoms in the

Surface layer (2m) before the thermal treatment determines the chemical Composition of the forming different SiGeC phases in the

Surface layer (2m ') after the thermal treatment

Fig. 3 a, b, c) shows the production of a network consisting of magnetizable nanoparticles in the nodes of the network or of magnetizable nanoparticles in the nodes of the network and magnetizable

Line paths between the nodes of the network or off

magnetizable conduction paths between the nodes of the network (6 ') in a good electrical or electrically poorly conducting layer of a semiconductor and its use for spin-polarized scattering of charge carriers and for sorting spin-polarized charge carriers in solids

Semiconductor material during a current flow between the structured contacts (15), wherein between the structured contacts at least one node of the network is located. The minimum distance of the structured contacts is

for example in the Ge: Mn system about 10 nm. A layer with magnetic impurity atoms (2f) of a high concentration and a low solubility is produced. By the thermal treatment and by the structuring of the boundary layer (3), the magnetic impurities are redistributed and gassed on the cover layer with properties of a getter material (4). In addition, a continuous layer with clustered foreign atoms (6 ') can form on layer (2f "). Before the structured contacts (15) are applied, the network of magnetizable nanoparticles is chemically or physically etched the cover layer with properties of a getter material (4). and the layer of clustered impurities exposed on layer (2f)

ferromagnetic or paramagnetic nanoparticles through an external

Magnetic field B magnetized. Local external magnetic fields B in the region above the coercive field strength of the network can be generated by above and / or below flowing ring currents at a distance of a few nm from the network. An external magnetic field of 0.3 T is needed to complete the

To change the magnetization direction in a network of the Ge: Mn system. The ring currents or possibly currents through the network can be used to write information. The current used between the structured contacts is used as read current. If the read current now flows through the network between the structured contacts (15) then spin-up polarized charge carriers (8) in the layer (2f) are propagated in one direction of the network perpendicular to the direction of the current flow and spin-down polarized charge carriers (9 ) in the layer (2f) in the opposite direction of the network perpendicular to Direction of the current flow is deflected by spin-dependent scattering in the network. After switching off the magnetic field occurs due to the Hall effect caused separation of negative and positive charge carriers perpendicular to

Current flow direction not on. Nevertheless, a voltage U _{s is} measured, which depends on the separation of spin-up and spin-down polarized charge carriers

is due. The magnitude of the voltage U _s is given by the difference in the chemical potential of the spin-up and spin-down polarized charge carriers.

Fig. 3 d, e, f) shows the preparation of a network of biocidal nano- and

Microparticles in the walls of the network (Β ') and of biophilic or biocompatible material (Α') in the network cells to increase the adhesion of biomaterials to the network cells of the support material. The adhesion correlates with the match between feature size of the biophilic or biocompatible surface areas of the support material, ie the size of the network cells. It is a surface layer (2m) with locally on the nanometer and micrometer scale varying laterally and vertically distributed components of a multi-phase system (A, B) in the surface layer (2m) applied to a preferably structured substrate (1). A thickness d _{0 of} the surface layer of about 100 nm is sufficient for use as a carrier material for biomaterials. The surface layer (2) preferably consists of a mixed phase containing Ag, Cu and / or Mg for use as a carrier material for biomaterials. Preferably, the surface layer (2) should be thicker than 5 nm, more preferably thicker than 10 nm.

Preferably, the composition of the polyphase system (2m) by the

Applying and / or by ion implantation of different multiphase systems (A, B) are changed so that only in the areas of the cell walls, the Ag-containing, biocidal material and in the areas of the network cells, the Cu, Mg-containing, biophilic material segregated by thermal treatment , Before the thermal treatment, a cover layer (4) is applied to the surface layer (2m), the cover layer having a higher melting temperature than the surface layer (Figure 3 (d)). During the thermal treatment, the multiphase system is segregated and the biocidal components (Β ') in the cell walls of a network and the biophilic or biocompatible components (A) collected in the network cells. As biophilic material also one or more of the following components C, H, O, N, P, S, Cl, I, Br, Ca, K, Na, V, Fe, Mn can be used. By using a network with biocidal walls, the adhesion of the biomaterials to the area of the network cells is limited. This allows the separation of biomaterials in individual network cells. By using a network with different sized network cells, different sized biomaterials can be deposited in the individual network cells.

Shown is a section through a cell wall, which in Fig. 3 d, e, f) five complete

Cells linked together. At the junctions, the segregation of the biocidal material (Β ') is particularly high and can reach a maximum depth of d ₀ (Figure 3 e). In the thermal treatment, preferably the sample is moved under the laser (sample scan). If the network is two-dimensional, an xy table can be used for the sample scan. If the sample is three-dimensional, an xyz table can be used for the sample scan. The sample scan and the scan site dependent laser annealing parameters are correlated to set a particular cell size.

Fig. 4 a, b) shows the preparation of a network of electrically polarizable

Nanoparticles (6 ') in the diffusion region of solar cells for the sorting of

photogenerated charge carriers. The thickness of the layer in which the photogenerated charge carriers drift and electrons and holes are separated is d _PV . A layer of impurities (2f) of high concentration and low solubility, which form ferroelectric clusters after thermal treatment, is prepared. The electrically polarizable nanoparticles are said to be accessible via the

Form depth range d ₀ 'evenly distributed. This is achieved by getter regions (6) introduced in the same way in the layer (2f), by the distribution of the foreign atoms in the layer (2f) before the thermal treatment and / or by the use of laser light of different wavelengths and thus different penetration depths and

Melting depth achieved for the thermal treatment. The layer (2f) is to be exposed after the thermal treatment by chemical or physical etching of the cover layer with properties of a getter material (4) and the layer of clustered impurities (7). The metallization of the solar cell for applying the front contact (11) on the surface layer (12) with the thickness dpv and for applying the bottom contact (backside contact) (11 ') takes place after removing the cover layer with the properties of

Getter material (4) as well as the layer with clustered foreign atoms (7). The electrically polarizable nanoparticles have a large anisotropy and are polarized by a single application of an electric field so that the photogenerated charge carriers drift in the region of the local electric fields of the electrically polarizable nanoparticles in the direction of the corresponding contact of the solar cell. In Fig. 4, electrons in the local electric fields in the diffusion region drift in the direction of the front contact (11) and holes in the local electric fields in the direction of the back contact (11 ').

Fig. 4 c, d, e) shows the preparation of a functionalized solid with defined nanostructures in an insulating matrix (Α ') on the sample surface of a surface layer (2m) with locally on the nanometer and micrometer scale varying laterally and vertically distributed components of a multiphase system (A, B) in the functionalized surface layer before (Fig. 4 c)), during and after (Fig. 4 d, e) of a partial separation of the components of the multiphase system by thermal treatment. Prior to the application of the surface layer (2m), a backside electrode (O), for example in the form of a strip grid, for example as a 1 μm wide aluminum strip or platinum strip, is applied to the substrate (FIG. 4c). The melting point of the multiphase system (B) is lowest in the area above the backside electrode (O). After the thermal annealing, the surface layer is structured such that the regions (Β ') above the backside electrode are highest and are about 10 to 20 nm higher than the adjacent regions (Α'), compare FIG. 4 d). In this case, the specific material removal during physical etching can be used. Thereafter, a transparent cover layer (4) having a melting point higher than the melting point of the surface layer (2) is applied to the surface layer (2) and a laser is scanned over the entire surface or only selectively above the regions (Β ') of the back surface electrode (O) (Fig. 4d)). The parameters of the laser radiation are adjusted so that the components of the multiphase system segregate in the region (Β ') above the backside electrode. In another physical etching process, a 10 to 20 nm thick layer is removed from the surface layer and the continuous segregated region. Finally, a

Front side electrode (S), for example in the form of a strip grid,

For example, as 1 μηη wide aluminum strip or platinum strips, which are rotated by 90 ° relative to the strip grid of the back side electrode (O) applied.

Fig. 5 a, b) shows the production of magnetic, ferroelectric and

multiferroic clusters with structural anisotropy (6 ') in the molten layer with impurities after thermal treatment (2f). The starting point for this preparation is a layer of foreign atoms (2f) with spherical and / or structurally anisotropic clustered impurities (6) in the impurity layer (2f) prior to thermal treatment. The formation of spherical clusters (6) in the formation of the layer with foreign atoms (2f) is energetically most favorable. By means of a transducer (16), the solid body in the region of the spherical clusters is locally melted, for example by means of a mask, and then recrystallized again. In the production of clusters with structural anisotropy, the lateral and vertical heat conduction is used to provide lateral and vertical redistribution

To reach foreign atoms. The recrystallization heat delivered to the directly surrounding solid material leads to a delayed recrystallization in the region of the clusters. The clusters and the solid state material must have a

have different density, so that in the liquid phase, the impurities can preferably redistribute normal to the solid surface. Transducers are already being used in heat assisted thermal writing for 25x25 nm ² large memory cells.

Fig. 5 c, d) shows the modification of defined SiGeC nanostructures for the integration of photonics in the silicon and germanium technology. The starting point is formed by existing GeC nanostructures, which were formed in segregated areas of the SiGeC layer of the surface layer (2 '), for example in the form of quantum dots and quantum pyramids. Further thermal treatment, for example by means of a transducer (16), modifies the GeC nanostructures to have anisotropic properties after modification. Such anisotropic GeC nanostructures generate charge carriers by absorbing light. These photogenerated charge carriers can recombine and the light emitted thereby has its starting point in the GeC nanostructures and is preferably emitted in the direction perpendicular to the surface layer. The wavelength of the emitted light (21) depends on the anisotropy of the GeC nanostructures, on radiative recombination centers, and on the position of quantized states on the energy scale in the GeC nanostructures.

As recombination centers 3d transition metal ions or 4f-rare

Earth ions are used.

The preparation of these anisotropic, optically active nanostructures is not limited to SiGeC structures. Other mixed phase systems may consist of SiGeSn, SiSnC and GeSnC. The forming nanostructures and the solid state material must have a different density, so that in the liquid phase

Nanostructures can move relative to the surrounding solid state material.

FIG. 6 shows the redistribution of components of one or more metallic multiphase systems in the surface layer (2m) by local thermal treatment under a process gas. For local absorption of the laser radiation, the areas to be thermally treated locally may be roughened or shadow or resist masks may be used. These areas are labeled 2ma. The resulting metallic surface has regions of defined lateral composition variation and can be used as a substrate for the preparation of thin, locally n- or p-doped carbon materials

(For example, graphene, graphite) can be used by surface doping. Surface doping results in electron exchange between carbon layers and a dopant (contained in A, B, B 'or A') deposited on the surface layer (2m ') onto which the carbon materials, e.g. are prepared by CVD, see FIG. 6.

Fig. 7 illustrates the possibility of successively performing the deposition and thermal treatment of surface layers (2m ') on a substrate to prepare regions having different mixed phases (A, Α', B, B ', C, C). By repeating the process steps shown in FIG. 6, for example, boron-containing regions (A, A) in the surface layer for the p-doping and, for example, nitrogen-containing regions (B, B ') for the n-doping of

Carbon materials are prepared. After the preparation of the

Carbon materials, these are detached from the surface layer and applied to a silicon substrate with a thermally or naturally grown silicon dioxide cover layer. The surface layer (2m ') on crystalline (1 k) or amorphous substrate (1 a) may be flexible.

Furthermore, this method for the first time enables the surface doping of n- and p-doped regions in thin carbon materials.

Fig. 8 shows the redistribution of impurities in the layer (2f) by local

thermal treatment under a process gas, which coincides with the

Velocity v _G over the surface of the solid, which on one

Litigation process (17) is stored. The speed of the process control v _P is preferably directed opposite to the speed of the process gas v _G. The process gas (20), the solid and the sample guide (17) are in a process chamber (18) arranged. The local thermal treatment can take place via a transducer (16) and via an inlet window (19) in the process chamber (18) under a non-flowing and / or another flowing process gas. The static pressure of a non-flowing process gas should preferably be above the triple point of the solid. The relative velocity (| v _G - v _P |) between the process gas v _G and the sample guide v _P and the flow of the process gas which determines the density of the process gas p _G are

preferably to be chosen so that the dynamic pressure PGX (2 (| V _G -V _p |)) ^"2 above the

Triple point of the solid lies. As the process gas, oxygen, nitrogen, helium, argon or a mixture or compound with these substances and other noble gases can be used. Preferably, an oxygen-containing process gas should be selected in oxidic solids or a nitrogen-containing process gas in nitridic solids. This reduces evaporation and ablation effects during the thermal treatment and reduces the magnitude of a possible stoichiometric imbalance on the surface of the solid after thermal treatment. The redistribution of the impurity atoms under a process gas is preferably used for the production of transparent conductive oxide layers on a flexible substrate in a roll-to-roll process. Thus, the solubility of the foreign atoms in the liquid phase of the solid (ZnO: P) and the removal (annealing) of intrinsic, electrically active defects (V ₀ ) by thermal treatment under a process gas only possible.

reference numeral

1 substrate (1 k - with crystalline surface, 1a - with amorphous surface)

2 layer before the thermal treatment (2f with impurities, 2m with

Mixed phases and without roughened surface, 2ma with mixed phases and surface areas roughened or covered with shadow or resist masks)

2 'melted layer after the thermal treatment (2f with

Foreign atoms, 2m 'with mixed phases)

2 "melted layer after the thermal treatment (2f" without

Foreign atoms, 2m "without mixed phases)

3 interface between substrate 1 and layer 2 4 cover layer with properties of a getter material

5 getter areas in layer 2, 2 '

6 areas with clustered impurities in layer 2

6 'Regions with clustered impurities in layer 2'

6 "clustered, magnetizable conductive paths in layer 2 '

7 layer with clustered impurities on layer 2 '

8 spin-up polarized charge carriers in layer 2 '

9 spin-down polarized charge carriers in layer 2 '

10 intrinsic defects in the layer with foreign atoms 2

15 structured contacts (0 backside electrode, S surface electrode)

16 transducers

17 Sampling with velocity v _P

18 process chamber

19 entrance window for laser light

20 process gas with velocity v _G

21 emitted light

d ₀ thickness of layer 2 before thermal treatment

do 'thickness of the molten layers 2' and 2 "

d _d Thickness of a continuous segregated area on the surface of the

Layer 2 ', which must be removed before further use

dg total thickness of superimposed continuous getter areas 5 d,

average depth of a continuous getter area 5

d _s Mean distance from clustered impurities and segregated

mixed phases

d _d thickness of the continuous segregated layer on the surface of 2m dpv thickness of the front surface layer 12

B external magnetic field 1 electric current

Ic capillary length compared to the melting depth d ₀ '. Dominate for l _c <d ₀ '

Surface tension effects.

v _G

Speed of the process gas

v _p

Speed of sample handling

U _s Voltage perpendicular to the direction of current flow in a network of magnetizable nanoparticles without external magnetic field B

A, B, C, D

Areas in 2m with different chemical compositions in the mixed phases

Α ', B', C,

Areas in 2m 'with different chemical compositions in the D'

mixed phases

zA ', pA'

zA 'biocidal area Α', pA 'biophilic or biocompatible area A

0

Back electrode

S

Front side electrode

Δή

Height difference between different mixed phases in 2m 'after a physical etching step

Claims

claims

1 . Solid with functionalized surface layer with locally on the nanometer and micrometer scale varying laterally and vertically distributed components of one or more two- and multi-phase systems after a partial separation of the components of the two- or multi-phase system by thermal treatment, wherein during a single thermal treatment, the lateral mixing of different Two- and multi-phase systems is less than 500 nm and the maximum vertical mixing is less than 2000 nm.

2. Solid with functionalized surface layer of a maximum thickness smaller than 2000 nm with targeted locally inhomogeneous, by thermal treatment in the

Solid body surface redistributed impurities, the solubility of the

Foreign atoms in the solid surface is low, ie less than 10 ²¹ foreign atoms per cm ³ , and the foreign atoms are present locally in high concentration, ie in the range of 1 to 30 at%.

3. Solid according to claim 1, characterized in that the lateral

Mixing of different two- and multi-phase systems is less than 100 nm, preferably less than 50 nm and more preferably less than 10 nm.

4. Solid according to claim 1, characterized in that repeated on the

Solid with functionalized surface layer more two- and

Polyphase systems are applied.

5. Solid according to claim 1 or 2, characterized in that the two- and multi-phase system areas or the surface layer (2) are amorphous, amorphous-crystalline or crystalline and at least one semiconductor material and / or at least one metallic material and / or at least one insulator material consist.

6. Solid according to claim 1 or 2, characterized in that the adjustable composition or distribution of the impurities of the two and

Multiphase system areas after the thermal treatment is limited by the combination of the mixtures of metallic, semiconducting and insulating material before the thermal treatment.

7. Solid according to claim 1 or 2, that a cover layer 4 on the

Surface layer is applied, wherein the melting temperature of the cover layer 4 is preferably higher than the melting temperature of the amorphous, amorphous-crystalline or crystalline surface layer 2.

8. Solid according to claim 1 or 2, characterized in that the components of the two- and multi-phase system form a network structure.

9. solid according to claim 8, characterized in that the network structure

biocidal network walls and biophilic network cells.

10. Preparation of the solid according to one of the preceding claims, with

following steps:

Use of a substrate 1 with optional structured surface,

Production or application of all adjoining regions of the surface layer to be functionalized of amorphous, amorphous crystalline or crystalline material 2, wherein the regions may consist of different mixtures and any mixture of semiconductor materials and / or of metallic materials and / or of insulating materials with a maximum thickness d ₀ less than 2000 nm on the substrate and wherein the mixtures of metallic, semiconducting and insulating material may be miscible or immiscible or the layer contains impurities and wherein the solubility of the impurities in the amorphous, amorphous crystalline or crystalline surface layer is low, ie smaller as 10 ²¹ foreign atoms per cm ³ , and the foreign atoms in high concentration in the amorphous, amorphous crystalline or crystalline surface layer, ie in the range of 1 to 30at%., Subsequent thermal treatment of the solid surface for targeted locally inhom ogenen redistribution of the mixtures or impurities of metallic, semiconducting and insulating material in the amorphous, amorphous crystalline or crystalline surface layer without or with the use of a process gas, wherein the functionalized surface layer is melted.

1 1. Production according to claim 10, wherein an interface (3) is formed between the substrate and the amorphous, amorphous crystalline or crystalline surface layer (2) with foreign atoms.

12. Production according to claim 10, characterized in that a cover layer is applied before the thermal treatment.

13. Preparation according to claim 12, after the thermal treatment, the cover layer is removed together with the continuous segregated area on the surface of the surface layer 2 '.

14. Preparation of the solid according to claim 10, characterized in that the foreign atoms during the growth of amorphous, amorphous-crystalline and / or crystalline layer with impurities (2) are distributed laterally and vertically homogeneous and / or in clusters.

15. The preparation according to claim 10, characterized in that in the amorphous amorphous crystalline surface layer 2 of at least one mixture of semiconductor material and / or of metallic material and / or of insulating material or a

Combined these mixtures one or more getter areas 5 are introduced before the thermal treatment, wherein the melting temperature is higher than that

Melting temperature of the amorphous, amorphous crystalline or crystalline layer 2 at the location of the getter 5 is.

16. Preparation of the solid according to claim 10, characterized in that the registered energy density of the laser light used in thermal treatment of the properties of the amorphous, amorphous crystalline and / or crystalline layer with impurities (2) or the surface layer (2) is determined and this

Energy density of the laser used per delivered laser pulse is less than 5 Jcm ^"2 and the photon energy of the laser light used is above the band gap of the semiconductor and thereby the laser light is absorbed near the surface of the solid.

17. Production according to claim 10, characterized in that the back of the

Substrate is thermally treated to reduce thermal stress.

18. Preparation according to claim 10, characterized in that laser with

of different wavelengths can be used locally in thermal annealing to produce crystalline and / or amorphous nanostructures.

19. Use of the solid according to claims 1 to 9 or the solid produced according to any one of claims 10 to 18, as a top-down produced New PhaseChangeMaterial, wherein the shape of the

PhaseChangeMaterials can vary between spherical and pyrimdal-tropic, and wherein the PhaseChangeMaterial with one of the spherical shape

deviant form has several resistance states.

20. Use of the solid according to claims 1 to 9 or the solid, which is prepared according to any one of claims 10 to 18, as a network with biocidal

Components (Β ') in the cell walls and biophilic or biocompatible components (Α ') in the network cells to increase the adhesion of biomaterials on the support material, wherein the mesh size is comparable to that of the biomaterial.

Use of the solid according to claims 1 to 9 or of the solid, which is produced according to one of claims 10 to 18, as optoelectronic

Component with nanopyramids, quantum dots, quantum wires and

SiGeC, SiGeSn and SiSnC quantum wells, characterized in that the electronic band gap of the composite nanostructures is smaller than the electronic band gap of the surrounding host material and that the emitted light emits light or perpendicular to the surface from the side edges by using a getter layer as a waveguide can be.

Use of the solid according to claims 1 to 9 or of the solid, which is produced according to one of claims 10 to 18, as a carrier material for the production of thin, locally n- or p-doped carbon materials

(For example, graphene, graphite) by surface doping.

Use of the solid according to claims 1 to 9 or the solid produced according to one of claims 10 to 18 as a network for spin-polarized scattering of charge carriers in electrically conductive or insulating layers of a semiconductor material, or for sorting photogenerated charge carriers in the

Diffusion region of solar cells, wherein the networks of magnetizable and / or electrically polarizable nanoparticles (6 ') and / or magnetizable and / or electrically polarizable conduction paths (6 ") exist.

Component with ternary nanopyramids or quantum dots in

Semiconductor heterostructures, preferably InGaAs in GaAs / AIAs or SiGe in Si / Ge, wherein the component of the heterostructure with the higher melting temperature serves as a getter layer.

Use of the solid according to claims 1 to 9 or the solid produced according to any one of claims 10 to 18 as transparent

Optoelectronic component of intrinsically n-type oxides in which the solubility of acceptor-like impurities in the liquid phase during the thermal treatment in the process gas is extremely increased, so that arrange the acceptor-like impurities after cooling on lattice sites of the solid.

26. Use of the solid according to claims 1 to 9 or of the solid, which is produced according to one of claims 10 to 18, as a sensor for electric or magnetic fields, characterized in that the solid in the

Surface layer (2) is a composite with anisotropic clusters, wherein the anisotropic clusters are electrically polarizable and / or magnetizable.

27. Use of the solid according to claims 1 to 9 or of the solid, which is produced according to one of claims 10 to 18, as uniform / regular nanostructures, for example for nanoimprint lithography, wherein the

Nanostructures can be used directly as masks, or chemically be specifically etched out of the solid and then this

etched out nanostructures filled with other materials.