DE102016004085A1 - METHOD FOR PRODUCING AN ELECTRICALLY FUNCTIONALIZED SEMICONDUCTOR ELEMENT AND SUCH A SEMICONDUCTOR ELEMENT - Google Patents

Abstract

In order to be able to produce semiconductor elements which are particularly suitable for use in solar cells with high efficiencies, a method for producing an electrically functionalized semiconductor element (1) is provided according to the invention, wherein the semiconductor element (1) has a main body () having grain boundaries (12). 2) comprises a first semiconductor material having a first bandgap, and wherein the method comprises the steps of: - producing a starting product of the first semiconductor material; Introducing at least one substance into the starting product or during its production, wherein a second semiconductor material is selected as the substance or a substance which can form the second semiconductor material with the first semiconductor material, wherein the second semiconductor material has a second band gap which is at least 0.5 eV is different from the first band gap, and wherein the second semiconductor material for forming a plurality of electrically conductive structures (5) in the region of the grain boundaries (12) of the base body (2) is provided; Crystallizing or recrystallizing the starting product to the main body (2).

Description

FIELD OF THE INVENTION

The present invention relates to a method for producing an electrically functionalized semiconductor element.

Furthermore, the present invention relates to an electrically functionalized semiconductor element.

Finally, the present invention relates to the use of an electrically functionalized semiconductor element according to the invention.

STATE OF THE ART

Currently, in crystalline photovoltaics, especially in the photovoltaic device using Si-based semiconductor elements, there is a trend to produce solar cells with high efficiencies so that impurities of the semiconductor element are kept low and the crystal quality is as high as possible. Since there are few impurities and little crystal defects or (decorated) grain boundaries in the semiconductor element, a high proportion of the generated minority carriers can diffuse to the emitter. In particular, grain boundaries in this regard, especially in conjunction with impurities, offer centers where recombination of the minority carriers with majority carriers often occurs, thus losing the generated minority carriers.

The solutions known from the state of the art, which aim at improving the crystal quality in the form of the least possible impurities and grain boundaries of the semiconductor element used, are considered to be relatively expensive. In this case, attempts are being made to further optimize known crystal production methods. In the Czochralski method as well as in the Vertical Gradient Freeze (VGF) method, e.g. attempts to shorten the service lives by Nachchargierungsverfahren, and it is trying to resort to complex magnetic or acoustic methods to effect a better mixing of the melt, whereby higher crystallization rates and a higher crystal quality can be achieved. In order to obtain a monocrystalline block without grain boundaries in the latter method (VGF), efforts are made to carry out the crystallization with a monocrystalline seed crystal in the crucible. Efforts are also being made to establish a crucible-free zone melting process with crystal diameters of 6 "and larger for photovoltaics. Relative to the above methods, the Ribbon Growth-on-Substrates (RGS) method has lost importance in terms of market penetration. Even metallurgical treatment processes have not achieved the hoped-for breakthrough due to the sharp drop in Si prices. On the one hand, this is due to the competition of cost-reduced gas-phase deposition processes and, on the other hand, to the high demands of solar cell manufacturers. The slight price differences are often quickly offset by the lower efficiencies of the solar cells. Higher degrees of purity in upgraded metallurgical grade (UMG) Si can also very quickly drive up the costs of the metallurgical process steps required for this purpose.

Out HJ Moller et al., "Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells", Solid State Phenomena 156-158, 35 (2010) as well as out S. Köstner et al .; "Structural Analysis of Longitudinal Si-CN Precipitates in Multicrystalline Silicon", Proc. 8th IEEE PVSC 2, 1 (2012) It is known that SiC or Si ₃ N ₄ filaments in multicrystalline Si happen to be random due to impurities of them. However, these filaments are described as disturbing because they can lead to serious short circuits in solar cells.

OBJECT OF THE INVENTION

It is therefore an object of the present invention to provide means that allow a cost-effective production of semiconductor elements, which are particularly suitable for use in solar cells with high efficiencies, and such semiconductor elements. The latter can also be used for detector elements, in particular without the application of a depleteion voltage required for this purpose.

PRESENTATION OF THE INVENTION

The core of the invention is the idea of electrically functionalizing a semiconductor element which comprises a body having grains and grain boundaries of a first semiconductor material by generating structures of a second semiconductor material for collecting and conducting charges in the body, in particular in the region of the grain boundaries. This is made possible by the realization that the phase boundary between the two semiconductor materials becomes electrically conductive and has charge-collecting properties if the two semiconductor materials have a sufficiently different bandgap. The band bending occurring at the boundary or phase boundary between the two semiconductor materials plays an essential role for the electrical conductivity that occurs. Furthermore, the band bending ensures additional charge separation in the volume of the semiconductor and a field effect passivation of the grain boundaries, which is essential contributes to the improvement of the lifetime of the charge carriers in the semiconductor material.

The conductive structures ideally extend up to an upper side of the main body or contact the upper side electrically. In this way, charges can be conducted from the volume of the body to the top. In particular, when using an electrically functionalized semiconductor element according to the invention in a solar cell, minority carriers can be collected from the volume in this manner and conducted to an emitter or emitter contact, which makes electrical contact with the upper side. In this case, the minority charge carriers merely have to cover in volume a relatively small diffusion path up to the next electrically conductive structure or up to the next grain boundary, which is decorated with electrically conductive structures. Recombination of the minority carriers with majority carriers at the grain boundaries no longer takes place. It can be assumed that a charge cloud forms at the phase boundary within the grain boundary, which leads to a saturation of the respective states at any defect or recombination centers. It should be noted that for the formation of this charge cloud or inversion layer generally no metallic accumulations, precipitations or deposits on the secondary phase boundary are necessary.

One can therefore speak of an active passivation of the grain boundaries by the electrically conductive structures of the second semiconductor material. The getter properties of the grain boundaries are not adversely affected. That The decorated grain boundaries, like undecorated grain boundaries, can continue to function effectively as gettering sites for contaminants, thereby enhancing the material quality of the body, which in turn improves its electrical properties.

The same applies to the construction of semiconductor detectors. It can be assumed that the embossed field at the phase boundary already suffices to effect a charge separation without having to create an external field for it.

The conductive structures may in particular be in the form of substantially one-dimensional filaments or in the form of net-like structures or in the form of essentially two-dimensional walls.

The above can be applied in particular to semiconductor elements made of semiconductor materials such as Si - a material which is used extensively in photovoltaics and semiconductor technology. Of course, a multiplicity of other semiconductor materials is conceivable instead of Si as the first semiconductor material, for example GaAs, CdTe, perovskite or Cu (InGa) Se ₂ . If one introduces secondary phases or the second semiconductor material with different band gaps in the grain boundaries in the form of structures penetrating the base body into the material, these can achieve the desired effects. The experiments carried out indicate that the bandgap difference must be at least 0.5 eV. That is, the band gap of the second semiconductor material must be at least 0.5 eV larger or smaller than the band gap of the first semiconductor material. Here and below, the band gaps are always to be understood at room temperature.

The larger the bandgap difference, the better the electrical functionalization is achieved. The bandgap difference is therefore preferably at least 1 eV, particularly preferably at least 2 eV, in particular at least 4 eV.

In particular, in the case of Si (band gap about 1.1 eV) as the first semiconductor material, it has been shown that with Si ₃ N ₄ (band gap greater than or equal to 5 eV) as the second semiconductor material particularly good results are achieved - although it is Si ₃ N ₄ itself is an electrical insulator. In the scientific literature, it is even commonly believed that Si ₃ N ₄ does not show electrical conduction in Si.

The production of the conductive structures preferably takes place during the crystallization of the main body, in particular by the formation of precipitates of the second semiconductor material being made possible, or in front of it. That is, the second semiconductor material may be present in the first semiconductor material, in particular in the form of precipitates. A wide variety of known crystallization processes can be used to produce electrically functionalized semiconductor elements according to the invention. It is merely necessary to ensure that at least one substance is introduced into a starting product, in particular into a melt of the first semiconductor material or during the production of the starting product, which substance is already the second semiconductor material or which substance with the first semiconductor material is the second semiconductor material can form. In the case of conductive structures made of Si ₃ N ₄ in a Si base body, nitrogen can be introduced into the melt in a targeted manner to form Si ₃ N ₄ , for example by subjecting it to a nitrogen atmosphere, preferably at pressures greater than 5 bar, particularly preferably greater than or equal to 6 bar, is suspended. If, for example, the melt is in a crucible, it can alternatively or additionally, for example, be coated in a targeted manner with a sufficient amount of SiN in order to obtain a sufficient amount of nitrogen to introduce into the melt. Furthermore, the crucible shape can be adjusted so that the ratio of volume to surface of the melt positively influences the entry of secondary material. Furthermore, additional plate elements can be introduced or dipped from the substance into the melt, in order to introduce the substance into the melt. Particularly effective and quantitatively easily adjustable, the direct and possibly continuously adapted introduction of the secondary material into the melt has approximately the same properties as for crucible coatings, but in dried form.

A particularly cost-effective method is the application of a slurry mixture onto a PET carrier film, which can be removed again after drying. This process step can also be realized as a roll-to-roll process. After drying and outgassing of the solvent, wafering can be carried out with relatively little effort and the individual wafers are fed to a process step similar to sintering. In this case, in comparison with other methods, very thin wafers can be produced, which can be fed to a recrystallization process. Grain boundaries with a high secondary material content can be predefined in a process similar to screen printing. One positive and one negative pressure can be performed once each. In a process without the use of masks, the waste mixture of the silicon cutting process (Si / SiC slurry) mixed with SiN particles is particularly advantageous.

• – Erzeugen eines Ausgangsprodukts, insbesondere einer Schmelze, des ersten Halbleitermaterials;
• – Einbringen von mindestens einem Stoff in das Ausgangsprodukt oder bei dessen Erzeugung, wobei als Stoff ein zweites Halbleitermaterial gewählt wird oder ein Stoff, der mit dem ersten Halbleitermaterial das zweite Halbleitermaterial bilden kann, wobei das zweite Halbleitermaterial eine zweite Bandlücke aufweist, die sich um mindestens 0,5 eV von der ersten Bandlücke unterscheidet, und wobei das zweite Halbleitermaterial zur Ausbildung von einer Vielzahl von elektrisch leitenden Strukturen im Bereich der Korngrenzen des Grundkörpers vorgesehen ist, welche Strukturen jeweils eine Oberseite des Grundkörpers elektrisch kontaktieren und sich von der Oberseite in Richtung einer der Oberseite gegenüberliegenden Unterseite erstrecken;
• – Kristallisieren oder Rekristallisieren des Ausgangsprodukts zum Grundkörper.

Therefore, according to the invention, a method is provided for producing an electrically functionalized semiconductor element, wherein the semiconductor element comprises a grain boundary of a first semiconductor material, in particular Si, which first semiconductor material has a first band gap, the method comprising the following steps:

• - generating a starting product, in particular a melt, of the first semiconductor material;
• Introducing at least one substance into the starting product or during its production, wherein a second semiconductor material is selected as the substance or a substance which can form the second semiconductor material with the first semiconductor material, wherein the second semiconductor material has a second band gap which is at least 0.5 eV is different from the first band gap, and wherein the second semiconductor material is provided for forming a plurality of electrically conductive structures in the region of the grain boundaries of the base body, which structures each electrically contact an upper side of the base body and from the upper side in the direction of the upper side opposite underside extend;
• Crystallizing or recrystallizing the starting product to the main body.

Furthermore, a functionalized semiconductor element obtainable by a method according to the invention is provided according to the invention.

Analogously to the above, an electrically functionalized semiconductor element is provided according to the invention, comprising a body having a grain boundary of a first semiconductor material, preferably of Si, wherein the first semiconductor material has a first band gap, wherein the base body has a top side and a bottom side opposite the top, wherein In the region of the grain boundaries of the base body there is a multiplicity of electrically conductive structures, which structures each electrically contact the upper side and extend from the upper side towards the lower side, the structures being formed by a second semiconductor material having a second band gap, and wherein the second bandgap differs by at least 0.5 eV from the first bandgap.

Under the first and second semiconductor material is of course also a negative or positively doped semiconductor material to understand. For example, Of course, Si as the first semiconductor material can also be doped negatively or positively. In addition, the doping in the body may be different locally. For example, can, in particular when the semiconductor element according to the invention is used in solar cells, the base body having an emitter which is doped differently than the rest of the base body. Furthermore, the invention provides the introduction of Schottkybarrieren, which also provide a charge separation.

According to the above, it is provided in a preferred embodiment of the method according to the invention that the starting material is a melt. In a further preferred embodiment, the starting material is deposited directly from the gas phase. Likewise, in accordance with the above, in a preferred embodiment of the method according to the invention, the introduction of the at least one substance into the melt comprises the introduction of a gaseous substance, preferably by exposing the melt to an atmosphere which contains the gaseous substance. However, the gaseous substance could also be e.g. be blown into the melt.

The introduction of the at least one substance in the slurry mixture of the roll-to-roll process can be carried out or structured in a particularly cost-effective manner be realized in a screen printing process. The films are then sintered and recrystallized. If a certain thickness is not exceeded, the crystallized silicon remains elastic.

For crystallization can be made of a variety of known per se crystallization process. In particular, in a preferred embodiment of the method according to the invention, it is provided that the crystallization takes place by means of the Ribbon Growth-on-Substrates (RGS) process or by means of the Vertical Gradient Freeze (VGF) process or the recrystallization of the thin film materials.

Generally, crystallization of the melt favors the formation of precipitates when crystallization is rapid. Therefore, it is provided in a preferred embodiment of the method according to the invention that crystallization takes place at a crystallization rate greater than or equal to 4 mm / h, preferably greater than or equal to 6 mm / h, particularly preferably greater than or equal to 8 mm / h. The rate of crystallization refers to the rate at which the front of the already crystallized solidified region of the body progresses. In block solidification processes such as the VGF process, this solidification front typically moves from bottom to top.

On the other hand, in order not to let the crystallization become too fast and thus not to incorporate too high a number of crystal defects, in particular dislocations, it is preferably provided that the crystallization rate is less than 20 mm / h, more preferably less than 15 mm / h. The introduction of the at least one substance into the starting product can in principle be realized in a wide variety of ways: for example, plates can be arranged from the substance in the melt or plates which are coated with the substance. In the latter case, the panels act like additional coated crucible walls when the melt is in a crucible. If the melt is present in a crucible, e.g. the surface of the crucible is provided with a coating comprising the substance. Furthermore, the crucible itself may be made of or contain at least one substance.

Furthermore, the substance may in principle also be in particulate form, e.g. be placed in the melt in powder form, with particular attention to be set to possibly different high melting temperatures of the material and the first semiconductor material. If the latter is the case, care must be taken not to add too large pieces of the substance to the melt, i. the particles or the powder must be sufficiently fine.

Instead of a powder and lumps of the starting material for the melt of the first semiconductor material can be used by these lumps, which are sometimes referred to as a feedstock, provided with the at least one substance, preferably coated. These modified lumps can be introduced into the melt and / or melted together with lumps of the pure first semiconductor material. In the former case, the at least one substance is introduced into the melt. In the latter case, the at least one substance is introduced during the production of the melt.

Another possibility for the introduction of the at least one substance in the production of the melt is the so-called Silicon Sheets from Powder (SSP) method. In this case, powder of the at least one substance can be added to a powder of the first semiconductor material. The powder grains can be present in a wide variety of geometric shapes. For example, powder grains in the form of small beads are possible. The diameter of the beads consequently affects the surface quality of the wafer produced. With a thickness of the wafer of typically 140 • m to 220 • m, preferably from 170 • m to 190 • m, more preferably 180 • m, typical diameters of the beads are between 20 • m and 50 • m. In principle, however, clearly larger diameters of the beads, e.g. up to 1 mm, possible.

The mixed powder is applied to a substrate. In particular, an etched-surface Si wafer may be used as the substrate, wherein the etching produces a holey surface which in turn allows easy detachment of the body from the substrate. Furthermore, this promotes the transfer of the grain structure of the substrate to the base body. The mixed powder can be melted directly on the substrate by means of laser or electron beam. The at least one substance may already be the second semiconductor material or may favor the growth of secondary phases of the second semiconductor material. The formation of a grain structure can also be influenced in another way. For example, a cooling coil or cooling coil or cooling ribs can be arranged below the substrate, which are preferably larger than the substrate. Accordingly, the substrate is cooled locally, resulting in substantially linear cooling sinks. At these points crystallization of the melt commences and crystallization fronts run away from the cooling sinks in opposite directions. The crystallization fronts, which emanate from opposing or adjacent cooling sinks meet each other in sequence and form a grain boundary. The segregation takes care of it that the material forming the secondary phase or the conductive structures is transported into the confines, so that the conductive structures are formed selectively in the grain boundaries.

Instead of cooling locally during the crystallization process, but can also be locally heated according to the invention. According to the invention, a particularly elegant method is to irradiate the melt with laser beams or electron beams during cooling, wherein the beams can form a specific geometric pattern on the melt. Due to the use of laser beams or electron beams, any desired patterns can be predetermined in the simplest manner. According to this pattern, an uneven temperature distribution in the melt sets in, wherein the irradiated areas have a higher temperature than the unexposed areas. As crystallization begins in the cooler regions, crystallization fronts migrate from the cooler regions towards the warmer regions and collide there, forming grain boundaries. That By irradiation with a specific pattern, the grain boundary structure can be manipulated specifically. Ideally, this can go so far that the grain boundary structure produced essentially corresponds to the pattern with which the melt is irradiated. Again, because of the segregation, an enrichment zone of the secondary phase forming material is shuffled in front of each growth or crystallization front until the fronts of crystallization meet. Upon crystallization, the secondary phase is formed, i. the conductive structures are formed selectively in the grain boundaries.

The above also applies to the application of a slurry on a sheet material or on a pre-etched wafer and the subsequent crystallization or sintering.

Of course, this way of structuring the grain boundaries also works if the melt is not first formed on the substrate, but also if the melt is applied directly to the substrate, as is the case with the RGS process. Therefore, it is provided in a preferred embodiment of the method according to the invention that when crystallizing or recrystallizing the starting product, the starting material is irradiated by laser or electrons, wherein the irradiation forms a geometric pattern on the starting product to set a geometric structure of the grain boundaries.

In general, the formation of grain boundaries in different crystallization processes, in particular in the VGF process, can be favored or even enforced by the use of a polycrystalline seed crystal. Therefore, it is provided in a preferred embodiment of the method according to the invention that a polycrystalline seed crystal is used for crystallization of the base body in order to force a certain grain structure of the base body. Accordingly, it is also ensured that grain boundaries are present, in the region of which the conductive structures can form. It should be noted that with regard to the further processing, in particular contacting, it is to be regarded as advantageous if grains having substantially parallel grain boundaries are present.

Another example of the incorporation of the at least one substance already in the production of the starting product - wherein the starting material is not a melt - is, on a substrate, preferably made of Si, in a conventional manner, wall-like structures of the second semiconductor material, in particular Si ₃ N ₄ , to apply. This can be done for example by means of chemical vapor deposition (CVD) or by sputtering in each case using appropriate masks for generating the wall structures. Now, the first semiconductor material is applied, for example by direct deposition from the gas phase or CVD. Subsequently, the basic body thus produced is recrystallized by thermal treatment. The base body thus obtained has grains, wherein the walls of the second semiconductor material define the grain boundaries. That is, the main body is basically obtained by crystallizing or recrystallizing the starting product.

In order to ensure optimal functioning of the electrically functionalized semiconductor element according to the invention, it is provided in a preferred embodiment of the method according to the invention that the introduction is metered so that at least 50%, preferably at least 80%, more preferably at least 90% of all grain boundaries with the structures the second semiconductor material are decorated. If the second semiconductor material is known for a given first semiconductor material, the dosage necessary for the desired decoration fraction may be e.g. be determined by routine experimentation.

When the second semiconductor material is in the form of precipitates, the dosage results in particular from the solubility of at least one constituent of the precipitates in the first semiconductor material, taking into account the ratio of the grain boundary size to the grain size and the stoichiometry of the precipitates. For example, to produce Si ₃ N ₄ precipitates in Si, the concentration of N may be slightly below the solubility limit for N in Si, which is about 6 × 10 ¹⁸ cm ^-3 , be adjusted in the melt, possibly with Nachchargierung. In the grain boundaries is then due to segregation an increased concentration, which leads to the formation of Si ₃ N ₄ precipitates.

Analogous to the above, it is provided in a preferred embodiment of the electrically functionalized semiconductor element that at least 50%, preferably at least 80%, more preferably at least 90% of all grain boundaries are decorated with the structures of the second semiconductor material. When used in a solar cell, this high proportion of grain boundaries decorated with conductive structures ensures that the minority carriers can be optimally conducted from the volume to the emitter and that the grain boundaries are sufficiently passivated. The same applies to detectors.

In order to ensure a particularly reliable and large electrical conduction of the conductive structures, in particular with regard to use in a solar cell, it is provided in a preferred embodiment of the electrically functionalized semiconductor element that in the region of at least one of the grain boundaries of the base body, the average distance between two immediately adjacent structures less than or equal to 5 • m, preferably less than or equal to 2 • m, more preferably less than or equal to 1 • m. In this case, the average distance can be determined in a sectional plane which is parallel to the top and / or bottom. This design of the semiconductor element achieves excellent active passivation of the grain boundaries in the case of solar cells and high charge collection efficiency in the case of detectors / sensors.

Due to the electrical functionalization, a grain structure or grain boundaries in the electrically functionalized semiconductor element is not only not a problem but even desirable because the grain boundaries can be decorated with the conductive structures. In order to be able to provide a sufficiently large amount of grain boundaries decorating conductive structures for applications in practice, in particular for solar cell applications, it is provided in a preferred embodiment of the electrically functionalized semiconductor element that in the base body at least in one direction, the average distance one grain to another, the next neighbor forming grain, less than or equal to 2 mm, preferably less than or equal to 1 mm, more preferably less than or equal to 0.5 mm. In this way, it is also ensured that the grain boundaries or the conductive structures are distributed relatively homogeneously over the base body at least in one direction. This has a positive effect, in particular in the application for solar cells, with typical lateral dimensions of the main body in this case being between 100 mm × 100 mm and 450 mm × 450 mm, in particular 156 mm × 156 mm, or the basic body typically has a diameter between 100 mm and 450 mm, in particular 156 mm or between 6 '' and 8 '' on.

As already mentioned, the difference in the band gaps between the first and second semiconductor material is decisive for the generation of electrically conductive structures in the first semiconductor material. The larger the band gap of the second semiconductor material, the easier it is to ensure correspondingly large differences. It is therefore provided in a preferred embodiment of the method according to the invention that the second band gap is greater than or equal to 1.7 eV, preferably greater than or equal to 3 eV, more preferably greater than or equal to 3.6 eV, in particular greater than or equal to 5 eV. It is likewise provided in a preferred embodiment of the electrically functionalized semiconductor element that the second bandgap is greater than or equal to 1.7 eV, preferably greater than or equal to 3 eV, particularly preferably greater than or equal to 3.6 eV, in particular greater than or equal to 5 eV.

Nitrides are particularly suitable as a second semiconductor material due to their large band gaps. It is therefore provided in a preferred embodiment of the method according to the invention that the second semiconductor material is a nitride or carbonitride, preferably AlN, GaN, BN, InN, TiN or Si ₃ N ₄ . Likewise, in a preferred embodiment of the electrically functionalized semiconductor element according to the invention, it is provided that the second semiconductor material is a nitride or carbonitride, preferably AlN, GaN, BN, InN, TiN or Si ₃ N ₄ .

Covalent nitrides can in particular form III-V semiconductors. Of course, the second semiconductor material may also be other III-V semiconductors or even II-VI semiconductors. There is no limitation to binary systems, i. The second semiconductor material may, for example, also be a ternary or quaternary system. Accordingly, in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element according to the invention, it is provided that the second semiconductor material is an II-VI semiconductor or a III-V semiconductor, which is in particular is a binary, preferably a ternary, more preferably a quaternary compound.

With regard to II-VI semiconductors, it should be noted that instead of Be also Pb as a constituent of a Connection, although Pb is not in the same main group as Be.

It is therefore provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element according to the invention that the second semiconductor material is a binary compound of two chemical elements, wherein the first chemical element is selected from the group consisting of Zn, Cd, Pb, Mg, Ca, Sr and Ba and wherein the second chemical element is selected from the group consisting of O, S, Se and Te. Accordingly, there are basically the following possibilities for chemical compounds for such a second semiconductor material: ZnO, CdO, PbO, MgO, CaO, SrO, BaO, ZnS, CdS, PbS, MgS, CaS, SrS, BaS, ZnSe, CdSe, PbSe, MgSe, CaSe, SrSe, BaSe, ZnTe, CdTe, PbTe, MgTe, CaTe, SrTe, BaTe. Analogously, it is provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element according to the invention that the second semiconductor material is a ternary compound of three chemical elements, wherein the first chemical element and the second chemical element are selected from the group consisting of Zn, Cd, Pb, Mg, Ca, Sr and Ba and wherein the third chemical element is selected from the group consisting of O, S, Se and Te. Accordingly, there are basically the following possibilities for chemical compounds for such a second semiconductor material: ZnZnO, CdZnO, PbZnO, MgZnO, CaZnO, SrZnO, BaZnO, ZnCdO, CdCdO, PbCdO, MgCdO, CaCdO, SrCdO, BaCdO, ZnPbO, CdPbO, PbPbO, MgPbO, CaPbO, SrPbO, BaPbO, ZnMgO, CdMgO, PbMgO, MgMgO, CaMgO, SrMgO, BaMgO, ZnCaO, CdCaO, PbCaO, MgCaO, CaCaO, SrCaO, BaCaO, ZnSrO, CdSrO, PbSrO, MgSrO, CaSrO, SrSrO, BaSrO, ZnBaO, CdBaO, PbBaO, MgBaO, CaBaO, SrBaO, BaBaO, ZnZnS, CdZnS, PbZnS, MgZnS, CaZnS, SrZnS, BaZnS, ZnCdS, CdCdS, PbCdS, MgCdS, CaCdS, SrCdS, BaCdS, ZnPbS, CdPbS, PbPbS, MgPbS, CaPbS, SrPbS, BaPbS, ZnMgS, CdMgS, PbMgS, MgMgS, CaMgS, SrMgS, BaMgS, ZnCaS, CdCaS, PbCaS, MgCaS, CaCaS, SrCaS, BaCaS, ZnSrS, CdSrS, PbSrS, MgSrS, CaSrS, SrSrS, BaSrS, ZnBaS CdBaS, PbBaS, MgBaS, CABAS, SrBaS, Baba, ZnZnSe, CdZnSe, PbZnSe, MgZnSe, CaZnSe, SrZnSe, BaZnSe, ZnCdSe, CdCdSe, PbCdSe, MgCdSe, CaCdSe, SrCdSe, BaCdSe, ZnPbSe, CdPbSe, PbPbSe, MgPbSe, CaPbSe, SrPbSe, BaPbSe, ZnM gSe, CdMgSe, PbMgSe, MgMgSe, CaMgSe, 5SrMgSe, BaMgSe, ZnCaSe, cdcase, PbCaSe, MgCaSe, CaCaSe, SrCaSe, BaCaSe, ZnSrSe, CdSrSe, PbSrSe, MgSrSe, CaSrSe, SrSrSe, BaSrSe, ZnBaSe, CdBaSe, PbBaSe, MgBaSe, CaBaSe, SrBaSe, Babase, ZnZnTe, CdZnTe, PbZnTe, MgZnTe, CaZnTe, SrZnTe, BaZnTe, ZnCdTe, CdCdTe, PbCdTe, MgCdTe, CaCdTe, SrCdTe, BaCdTe, ZnPbTe, CdPbTe, PbPbTe, MgPbTe, CaPbTe, SrPbTe, BaPbTe, ZnMgTe, CdMgTe, PbMgTe, MgMgTe, CaMgTe, SrMgTe, BaMgTe, ZnCaTe, CdCaTe, PbCaTe, MgCaTe, Cacate, SrCaTe, BaCaTe, ZnSrTe, CdSrTe, PbSrTe, MgSrTe, CaSrTe, SrSrTe, BaSrTe, ZnBaTe, CdBaTe, PbBaTe, MgBaTe, CaBaTe, SrBaTe, BaBaTe.

Analogously, it is provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element that the second semiconductor material is a quaternary compound of four chemical elements, wherein the first chemical element, the second chemical element and the third chemical element are selected from the group consisting of Zn, Cd, Pb, Mg, Ca, Sr and Ba, and wherein the fourth chemical element is selected from the group consisting of O, S, Se and Te. Accordingly, there are basically the following possibilities for chemical compounds for such a second semiconductor material: ZnZnZnO, CdZnZnO, PbZnZnO, MgZnZnO, CaZnZnO, SrZnZnO, BaZnZnO, ZnCdZnO, CdCdZnO, PbCdZnO, MgCdZnO, CaCdZnO, SrCdZnO, BaCdZnO, ZnPbZnO, CdPbZnO, PbPbZnO, MgPbZnO, CaPbZnO, SrPbZnO, BaPbZnO, ZnMgZnO, CdMgZnO, PbMgZnO, MgMgZnO, CaMgZnO, SrMgZnO, BaMgZnO, ZnCaZnO, CdCaZnO, PbCaZnO, MgCaZnO, CaCaZnO, SrCaZnO, BaCaZnO, ZnSrZnO, CdSrZnO, PbSrZnO, MgSrZnO, CaSrZnO, SrSrZnO, BaSrZnO, ZnBaZnO, CdBaZnO, PbBaZnO, MgBaZnO, CaBaZnO, SrBaZnO, BaBaZnO, ZnZnCdO, CdZnCdO, PbZnCdO, MgZnCdO, CaZnCdO, SrZnCdO, BaZnCdO, ZnCdCdO, CdCdCdO, PbCdCdO, MgCdCdO, CaCdCdO, SrCdCdO, BaCdCdO, ZnPbCdO, CdPbCdO, PbPbCdO, MgPbCdO, CaPbCdO, SrPbCdO, BaPbCdO, ZnMgCdO, CdMgCdO, PbMgCdO, MgMgCdO, CaMgCdO, SrMgCdO, BaMgCdO, ZnCaCdO, CdCaCdO, PbCaCdO, MgCaCdO, CaCaCdO, SrCaCdO, BaCaCdO, ZnSrCdO, CdSrCdO, PbSrCdO, MgSrCdO, CaSrCdO, SrSrCdO, BaSrCdO, ZnBaCdO, CdBaCdO, PbBaCdO, MgBaCdO, Ca BaCdO, SrBaCdO, BaBaCdO, ZnZnPbO, CdZnPbO, PbZnPbO, MgZnPbO, CaZnPbO, SrZnPbO, BaZnPbO, ZnCdPbO, CdCdPbO, PbCdPbO, MgCdPbO, CaCdPbO, SrCdPbO, BaCdPbO, ZnPbPbO, CdPbPbO, PbPbPbO, MgPbPbO, CaPbPbO, SrPbPbO, BaPbPbO, ZnMgPbO, CdMgPbO, PbMgPbO, MgMgPbO, CaMgPbO, SrMgPbO, BaMgPbO, ZnCaPbO, CdCaPbO, PbCaPbO, MgCaPbO, CaCaPbO, SrCaPbO, BaCaPbO, ZnSrPbO, CdSrPbO, PbSrPbO, MgSrPbO, CaSrPbO, SrSrPbO, BaSrPbO, ZnBaPbO, CdBaPbO, PbBaPbO, MgBaPbO, CaBaPbO, SrBaPbO, BaBaPbO, ZnZnMgO, CdZnMgO, PbZnMgO, MgZnMgO, CaZnMgO, SrZnMgO, BaZnMgO, ZnCdMgO, CdCdMgO, PbCdMgO, MgCdMgO, CaCdMgO, SrCdMgO, BaCdMgO, ZnPbMgO, CdPbMgO, PbPbMgO, MgPbMgO, CaPbMgO, SrPbMgO, BaPbMgO, ZnMgMgO, CdMgMgO, PbMgMgO, MgMgMgO, CaMgMgO, SrMgMgO, BaMgMgO, ZnCaMgO, CdCaMgO, PbCaMgO, MgCaMgO, CaCaMgO, SrCaMgO, BaCaMgO, ZnSrMgO, CdSrMgO, PbSrMgO, MgSrMgO, CaSrMgO, SrSrMgO, BaSrMgO, ZnBaMgO, CdBaMgO, PbBaMgO, MgBaMgO, CaBaMgO, SrBaMgO, BaBaMgO, ZnZnCaO, CdZnCaO, PbZnCaO, MgZnCaO, CaZnCaO, SrZnCaO, BaZnCaO, ZnCdCaO, CdCdCaO, PbCdCaO, MgCdCaO, CaCdCaO, SrCdCaO, BaCdCaO, ZnPbCaO, CdPbCaO, PbPbCaO, MgPbCaO, CaPbCaO, SrPbCaO, BaPbCaO, ZnMgCaO, CdMgCaO, PbMgCaO, MgMgCaO, CaMgCaO, SrMgCaO, BaMgCaO, ZnCaCaO, CdCaCaO, PbCaCaO, MgCaCaO, CaCaCaO, SrCaCaO, BaCaCaO, ZnSrCaO, CdSrCaO, PbSrCaO, MgSrCaO, CaSrCaO, SrSrCaO, BaSrCaO, ZnBaCaO, CdBaCaO, PbBaCaO, MgBaCaO, CaBaCaO, SrBaCaO, BaBaCaO, ZnZnSrO, CdZnSrO, PbZnSrO, MgZnSrO, CaZnSrO, SrZnSrO, BaZnSrO, ZnCdSrO, CdCdSrO, PbCdSrO, MgCdSrO, C aCdSrO, SrCdSrO, BaCdSrO, ZnPbSrO, CdPbSrO, PbPbSrO, MgPbSrO, CaPbSrO, SrPbSrO, BaPbSrO, ZnMgSrO, CdMgSrO, PbMgSrO, MgMgSrO, CaMgSrO, SrMgSrO, BaMgSrO, ZnCaSrO, CdCaSrO, PbCaSrO, MgCaSrO, CaCaSrO, SrCaSrO, BaCaSrO, ZnSrSrO, CdSrSrO, PbSrSrO, MgSrSrO, CaSrSrO, SrSrSrO, BaSrSrO, ZnBaSrO, CdBaSrO, PbBaSrO, MgBaSrO, CaBaSrO, SrBaSrO, BaBaSrO, ZnZnBaO, CdZnBaO, PbZnBaO, MgZnBaO, CaZnBaO, SrZnBaO, BaZnBaO, ZnCdBaO, CdCdBaO, PbCdBaO, MgCdBaO, CaCdBaO, SrCdBaO, BaCdBaO, ZnPbBaO, CdPbBaO, PbPbBaO, MgPbBaO, CaPbBaO, SrPbBaO, BaPbBaO, ZnMgBaO, CdMgBaO, PbMgBaO, MgMgBaO, CaMgBaO, SrMgBaO, BaMgBaO, ZnCaBaO, CdCaBaO, PbCaBaO, MgCaBaO, CaCaBaO, SrCaBaO, BaCaBaO, ZnSrBaO, CdSrBaO, PbSrBaO, MgSrBaO, CaSrBaO, SrSrBaO, BaSrBaO, ZnBaBaO, CdBaBaO, PbBaBaO, MgBaBaO, CaBaBaO, SrBaBaO, BaBaBaO, ZnZnZnS, CdZnZnS, PbZnZnS, MgZnZnS, CaZnZnS, SrZnZnS, BaZnZnS, ZnCdZnS, CdCdZnS, PbCdZnS, MgCdZnS, CaCdZnS, SrCdZnS, BaCdZnS, ZnPbZnS, CdPbZnS, PbPbZnS, MgPbZnS, CaPbZnS, SrPbZnS, BaPbZnS, ZnMgZnS, CdMgZnS, PbMgZnS, Mg MgZnS, CaMgZnS, SrMgZnS, BaMgZnS, ZnCaZnS, CdCaZnS, PbCaZnS, MgCaZnS, CaCaZnS, SrCaZnS, BaCaZnS, ZnSrZnS, CdSrZnS, PbSrZnS, MgSrZnS, CaSrZnS, SrSrZnS, BaSrZnS, ZnBaZnS, CdBaZnS, PbBaZnS, MgBaZnS, CaBaZnS, SrBaZnS, BaBaZnS, ZnZnCdS, CdZnCdS, PbZnCdS, MgZnCdS, CaZnCdS, SrZnCdS, BaZnCdS, ZnCdCdS, CdCdCdS, PbCdCdS, MgCdCdS, CaCdCdS, SrCdCdS, BaCdCdS, ZnPbCdS, CdPbCdS, PbPbCdS, MgPbCdS, CaPbCdS, SrPbCdS, BaPbCdS, ZnMgCdS, CdMgCdS, PbMgCdS, MgMgCdS, CaMgCdS, SrMgCdS, BaMgCdS, ZnCaCdS, CdCaCdS, PbCaCdS, MgCaCdS, CaCaCdS, SrCaCdS, BaCaCdS, ZnSrCdS, CdSrCdS, PbSrCdS, MgSrCdS, CaSrCdS, SrSrCdS, BaSrCdS, ZnBaCdS, CdBaCdS, PbBaCdS, MgBaCdS, CaBaCdS, SrBaCdS, BaBaCdS, ZnZnPbS, CdZnPbS, PbZnPbS, MgZnPbS, CaZnPbS, SrZnPbS, BaZnPbS, ZnCdPbS, CdCdPbS, PbCdPbS, MgCdPbS, CaCdPbS, SrCdPbS, BaCdPbS, ZnPbPbS, CdPbPbS, PbPbPbS, MgPbPbS, CaPbPbS, SrPbPbS, BaPbPbS, ZnMgPbS, CdMgPbS, PbMgPbS, MgMgPbS, CaMgPbS, SrMgPbS, BaMgPbS, ZnCaPbS, CdCaPbS, PbCaPbS, MgCaPbS, CaCaPbS, SrCaPbS, BaCaPbS, ZnSrPbS, CdSrPbS, PbS RPBS, MgSrPbS, CaSrPbS, SrSrPbS, BaSrPbS, ZnBaPbS, CdBaPbS, PbBaPbS, MgBaPbS, CaBaPbS, SrBaPbS, BaBaPbS, ZnZnMgS, CdZnMgS, PbZnMgS, MgZnMgS, CaZnMgS, SrZnMgS, BaZnMgS, ZnCdMgS, CdCdMgS, PbCdMgS, MgCdMgS, CaCdMgS, SrCdMgS, BaCdMgS, ZnPbMgS, CdPbMgS, PbPbMgS, MgPbMgS, CaPbMgS, SrPbMgS, BaPbMgS, ZnMgMgS, CdMgMgS, PbMgMgS, MgMgMgS, CaMgMgS, SrMgMgS, BaMgMgS, ZnCaMgS, CdCaMgS, PbCaMgS, MgCaMgS, CaCaMgS, SrCaMgS, BaCaMgS, ZnSrMgS, CdSrMgS, PbSrMgS, MgSrMgS, CaSrMgS, SrSrMgS, BaSrMgS, ZnBaMgS, CdBaMgS, PbBaMgS, MgBaMgS, CaBaMgS, SrBaMgS, BaBaMgS, ZnZnCaS, CdZnCaS, PbZnCaS, MgZnCaS, CaZnCaS, SrZnCaS, BaZnCaS, ZnCdCaS, CdCdCaS, PbCdCaS, MgCdCaS, CaCdCaS, SrCdCaS, BaCdCaS, ZnPbCaS, CdPbCaS, PbPbCaS, MgPbCaS, CaPbCaS, SrPbCaS, BaPbCaS, ZnMgCaS, CdMgCaS, PbMgCaS, MgMgCaS, CaMgCaS, SrMgCaS, BaMgCaS, ZnCaCaS, CdCaCaS, PbCaCaS, MgCaCaS, CaCaCaS, SrCaCaS, BaCaCaS, ZnSrCaS, CdSrCaS, PbSrCaS, MgSrCaS, CaSrCaS, SrSrCaS, BaSrCaS, ZnBaCaS, CdBaCaS, PbBaCaS, MgBaCaS, CaBaCaS, SrBaCaS, BaBaCaS, ZnZnSrS, CdZn SrS, PbZnSrS, MgZnSrS, CaZnSrS, SrZnSrS, BaZnSrS, ZnCdSrS, CdCdSrS, PbCdSrS, MgCdSrS, CaCdSrS, SrCdSrS, BaCdSrS, ZnPbSrS, CdPbSrS, PbPbSrS, MgPbSrS, CaPbSrS, SrPbSrS, BaPbSrS, ZnMgSrS, CdMgSrS, PbMgSrS, MgMgSrS, CaMgSrS, SrMgSrS, BaMgSrS, ZnCaSrS, CdCaSrS, PbCaSrS, MgCaSrS, CaCaSrS, SrCaSrS, BaCaSrS, ZnSrSrS, CdSrSrS, PbSrSrS, MgSrSrS, CaSrSrS, SrSrSrS, BaSrSrS, ZnBaSrS, CdBaSrS, PbBaSrS, MgBaSrS, CaBaSrS, SrBaSrS, BaBaSrS, ZnZnBaS, CdZnBaS, PbZnBaS, MgZnBaS, CaZnBaS, SrZnBaS, BaZnBaS, ZnCdBaS, CdCdBaS, PbCdBaS, MgCdBaS, CaCdBaS, SrCdBaS, BaCdBaS, ZnPbBaS, CdPbBaS, PbPbBaS, MgPbBaS, CaPbBaS, SrPbBaS, BaPbBaS, ZnMgBaS, CdMgBaS, PbMgBaS, MgMgBaS, CaMgBaS, SrMgBaS, BaMgBaS, ZnCaBaS, CdCaBaS, PbCaBaS, MgCaBaS, CaCaBaS, SrCaBaS, BaCaBaS, ZnSrBaS, CdSrBaS, PbSrBaS, MgSrBaS, CaSrBaS, SrSrBaS, BaSrBaS, ZnBaBaS, CdBaBaS, PbBaBaS, MgBaBaS, CaBaBaS, SrBaBaS, BaBaBaS, ZnZnZnSe, CdZnZnSe, PbZnZnSe, MgZnZnSe, CaZnZnSe, SrZnZnSe, BaZnZnSe, ZnCdZnSe, CdCdZnSe, PbCdZnSe, MgCdZnSe, CaCdZnSe, SrCdZnSe, BaCdZnSe, ZnPbZnSe, CdPbZnSe, PbPbZnSe, MgPbZnSe, CaPbZnSe, SrPbZnSe, BaPbZnSe, ZnMgZnSe, CdMgZnSe, PbMgZnSe, MgMgZnSe, CaMgZnSe, SrMgZnSe, BaMgZnSe, ZnCaZnSe, CdCaZnSe, PbCaZnSe, MgCaZnSe, CaCaZnSe, SrCaZnSe, BaCaZnSe, ZnSrZnSe, CdSrZnSe, PbSrZnSe, MgSrZnSe, CaSrZnSe, SrSrZnSe, BaSrZnSe, ZnBaZnSe, CdBaZnSe, PbBaZnSe, MgBaZnSe, CaBaZnSe, SrBaZnSe, BaBaZnSe, ZnZnCdSe, CdZnCdSe, PbZnCdSe, MgZnCdSe, CaZnCdSe, SrZnCdSe, BaZnCdSe, ZnCdCdSe, CdCdCdSe, PbCdCdSe, MgCdCdSe, CaCdCdSe, SrCdCdSe, BaCdCdSe, ZnPbCdSe, CdPbCdSe, PbPbCdSe, MgPbCdSe, CaPbCdSe, SrPbCdSe, BaPbCdSe, ZnMgCdSe, CdMgCdSe, PbMgCdSe, MgMgCdSe, CaMgCdSe, SrMgCdSe, BaMgCdSe, ZnCaCdSe, CdCaCdSe, PbCaCdSe, MgCaCdSe, CaCaCdSe, SrCaCdSe, BaCaCdSe, ZnSrCdSe, CdSrCdSe, PbSrCdSe, MgSrCdSe, CaSrCdSe, SrSrCdSe, B aSrCdSe, ZnBaCdSe, CdBaCdSe, PbBaCdSe, MgBaCdSe, CaBaCdSe, SrBaCdSe, BaBaCdSe, ZnZnPbSe, CdZnPbSe, PbZnPbSe, MgZnPbSe, CaZnPbSe, SrZnPbSe, BaZnPbSe, ZnCdPbSe, CdCdPbSe, PbCdPbSe, MgCdPbSe, CaCdPbSe, SrCdPbSe, BaCdPbSe, ZnPbPbSe, CdPbPbSe, PbPbPbSe, MgPbPbSe, CaPbPbSe, SrPbPbSe, BaPbPbSe, ZnMgPbSe, CdMgPbSe, PbMgPbSe, MgMgPbSe, CaMgPbSe, SrMgPbSe, BaMgPbSe, ZnCaPbSe, CdCaPbSe, PbCaPbSe, MgCaPbSe, CaCaPbSe, SrCaPbSe, BaCaPbSe, ZnSrPbSe, CdSrPbSe, PbSrPbSe, MgSrPbSe, CaSrPbSe, SrSrPbSe, BaSrPbSe, ZnBaPbSe, CdBaPbSe, PbBaPbSe, MgBaPbSe, CaBaPbSe, SrBaPbSe, BaBaPbSe, ZnZnMgSe, CdZnMgSe, PbZnMgSe, MgZnMgSe, CaZnMgSe, SrZnMgSe, BaZnMgSe, ZnCdMgSe, CdCdMgSe, PbCdMgSe, MgCdMgSe, CaCdMgSe, SrCdMgSe, BaCdMgSe, ZnPbMgSe, CdPbMgSe, PbPbMgSe, MgPbMgSe, CaPbMgSe, SrPbMgSe, BaPbMgSe, ZnMgMgSe, CdMgMgSe, PbMgMgSe, MgMgMgSe, CaMgMgSe, SrMgMgSe, BaMgMgSe, ZnCaMgSe, CdCaMgSe, PbCaMgSe, MgCaMgSe, CaCaMgSe, SrCaMgSe, BaCaMgSe, ZnSrMgSe, CdSrMgSe, PbSrMgSe, MgSrMgSe, CaSrMgSe, SrSrMgSe, BaSrMgSe, ZnBaMgSe, C dBaMgSe, PbBaMgSe, MgBaMgSe, CaBaMgSe, SrBaMgSe, BaBaMgSe, ZnZnCaSe, CdZnCaSe, PbZnCaSe, MgZnCaSe, CaZnCaSe, SrZnCaSe, BaZnCaSe, ZnCdCaSe, CdCdCaSe, PbCdCaSe, MgCdCaSe, CaCdCaSe, SrCdCaSe, BaCdCaSe, ZnPbCaSe, CdPbCaSe, PbPbCaSe, MgPbCaSe, CaPbCaSe, SrPbCaSe, BaPbCaSe, ZnMgCaSe, CdMgCaSe, PbMgCaSe, MgMgCaSe, CaMgCaSe, SrMgCaSe, BaMgCaSe, ZnCaCaSe, CdCaCaSe, PbCaCaSe, MgCaCaSe, CaCaCaSe, SrCaCaSe, BaCaCaSe, ZnSrCaSe, CdSrCaSe, PbSrCaSe, MgSrCaSe, CaSrCaSe, SrSrCaSe, BaSrCaSe, ZnBaCaSe, CdBaCaSe, PbBaCaSe, MgBaCaSe, CaBaCaSe, SrBaCaSe, BaBaCaSe, ZnZnSrSe, CdZnSrSe, PbZnSrSe, MgZnSrSe, CaZnSrSe, SrZnSrSe, BaZnSrSe, ZnCdSrSe, CdCdSrSe, PbCdSrSe, MgCdSrSe, CaCdSrSe, SrCdSrSe, BaCdSrSe, ZnPbSrSe, CdPbSrSe, PbPbSrSe, MgPbSrSe, CaPbSrSe, SrPbSrSe, BaPbSrSe, ZnMgSrSe, CdMgSrSe, PbMgSrSe, MgMgSrSe, CaMgSrSe, SrMgSrSe, BaMgSrSe, ZnCaSrSe, CdCaSrSe, PbCaSrSe, MgCaSrSe, CaCaSrSe, SrCaSrSe, BaCaSrSe, ZnSrSrSe, CdSrSrSe, PbSrSrSe, MgSrSrSe, CaSrSrSe, SrSrSrSe, BaSrSrSe, ZnBaSrSe, CdBaSrSe, PbBaSrSe, M gBaSrSe, CaBaSrSe, SrBaSrSe, BaBaSrSe, ZnZnBaSe, CdZnBaSe, PbZnBaSe, MgZnBaSe, CaZnBaSe, SrZnBaSe, BaZnBaSe, ZnCdBaSe, CdCdBaSe, PbCdBaSe, MgCdBaSe, CaCdBaSe, SrCdBaSe, BaCdBaSe, ZnPbBaSe, CdPbBaSe, PbPbBaSe, MgPbBaSe, CaPbBaSe, SrPbBaSe, BaPbBaSe, ZnMgBaSe, CdMgBaSe, PbMgBaSe, MgMgBaSe, CaMgBaSe, SrMgBaSe, BaMgBaSe, ZnCaBaSe, CdCaBaSe, PbCaBaSe, MgCaBaSe, CaCaBaSe, SrCaBaSe, BaCaBaSe, ZnSrBaSe, CdSrBaSe, PbSrBaSe, MgSrBaSe, CaSrBaSe, SrSrBaSe, BaSrBaSe, ZnBaBaSe, CdBaBaSe, PbBaBaSe, MgBaBaSe, CaBaBaSe, SrBaBaSe, BaBaBaSe, ZnZnZnTe, CdZnZnTe, PbZnZnTe, MgZnZnTe, CaZnZnTe, SrZnZnTe, BaZnZnTe, ZnCdZnTe, CdCdZnTe, PbCdZnTe, MgCdZnTe, CaCdZnTe, SrCdZnTe, BaCdZnTe, ZnPbZnTe, CdPbZnTe, PbPbZnTe, MgPbZnTe, CaPbZnTe, SrPbZnTe, BaPbZnTe, ZnMgZnTe, CdMgZnTe, PbMgZnTe, MgMgZnTe, CaMgZnTe, SrMgZnTe, BaMgZnTe, ZnCaZnTe, CdCaZnTe, PbCaZnTe, MgCaZnTe, CaCaZnTe, SrCaZnTe, BaCaZnTe, ZnSrZnTe, CdSrZnTe, PbSrZnTe, MgSrZnTe, CaSrZnTe, SrSrZnTe, BaSrZnTe, ZnBaZnTe, CdBaZnTe, PbBaZnTe, MgBaZnTe, CaBaZnTe, S rBaZnTe, BaBaZnTe, ZnZnCdTe, CdZnCdTe, PbZnCdTe, MgZnCdTe, CaZnCdTe, SrZnCdTe, BaZnCdTe, ZnCdCdTe, CdCdCdTe, PbCdCdTe, MgCdCdTe, CaCdCdTe, SrCdCdTe, BaCdCdTe, ZnPbCdTe, CdPbCdTe, PbPbCdTe, MgPbCdTe, CaPbCdTe, SrPbCdTe, BaPbCdTe, ZnMgCdTe, CdMgCdTe, PbMgCdTe, MgMgCdTe, CaMgCdTe, SrMgCdTe, BaMgCdTe, ZnCaCdTe, CdCaCdTe, PbCaCdTe, MgCaCdTe, CaCaCdTe, SrCaCdTe, BaCaCdTe, ZnSrCdTe, CdSrCdTe, PbSrCdTe, MgSrCdTe, CaSrCdTe, SrSrCdTe, BaSrCdTe, ZnBaCdTe, CdBaCdTe, PbBaCdTe, MgBaCdTe, CaBaCdTe, SrBaCdTe, BaBaCdTe, ZnZnPbTe, CdZnPbTe, PbZnPbTe, MgZnPbTe, CaZnPbTe, SrZnPbTe, BaZnPbTe, ZnCdPbTe, CdCdPbTe, PbCdPbTe, MgCdPbTe, CaCdPbTe, SrCdPbTe, BaCdPbTe, ZnPbPbTe, CdPbPbTe, PbPbPbTe, MgPbPbTe, CaPbPbTe, SrPbPbTe, BaPbPbTe, ZnMgPbTe, CdMgPbTe, PbMgPbTe, MgMgPbTe, CaMgPbTe, SrMgPbTe, BaMgPbTe, ZnCaPbTe, CdCaPbTe, PbCaPbTe, MgCaPbTe, CaCaPbTe, SrCaPbTe, BaCaPbTe, ZnSrPbTe, CdSrPbTe, PbSrPbTe, MgSrPbTe, CaSrPbTe, SrSrPbTe, BaSrPbTe, ZnBaPbTe, CdBaPbTe, PbBaPbTe, MgBaPbTe, CaBaPbTe, SrBaPbTe, BaBaPbTe, ZnZnMgTe, CdZnMgTe, PbZnMgTe, MgZnMgTe, CaZnMgTe, SrZnMgTe, BaZnMgTe, ZnCdMgTe, CdCdMgTe, PbCdMgTe, MgCdMgTe, CaCdMgTe, SrCdMgTe, BaCdMgTe, ZnPbMgTe, CdPbMgTe, PbPbMgTe, MgPbMgTe, CaPbMgTe, SrPbMgTe, BaPbMgTe, ZnMgMgTe, CdMgMgTe, PbMgMgTe, MgMgMgTe, CaMgMgTe, SrMgMgTe, BaMgMgTe, ZnCaMgTe, CdCaMgTe, PbCaMgTe, MgCaMgTe, CaCaMgTe, SrCaMgTe, BaCaMgTe, ZnSrMgTe, CdSrMgTe, PbSrMgTe, MgSrMgTe, CaSrMgTe, SrSrMgTe, BaSrMgTe, ZnBaMgTe, CdBaMgTe, PbBaMgTe, MgBaMgTe, CaBaMgTe, SrBaMgTe, BaBaMgTe, ZnZnCaTe, CdZnCaTe, PbZnCaTe, MgZnCaTe, CaZnCaTe, SrZnCaTe, BaZnCaTe, ZnCdCaTe, CdCdCaTe, PbCdCaTe, MgCdCaTe, CaCdCaTe, SrCdCaTe, BaCdCaTe, ZnPbCaTe, CdPbCaTe, PbPbCaTe, MgPbCaTe, CaPbCaTe, SrPbCaTe, BaPbCaTe, ZnMgCaTe, CdMgCaTe, PbMgCaTe, MgMgCaTe, CaMgCaTe, SrMgCaTe, BaMgCaTe, ZnCaCaTe, CdCaCaTe, PbCaCaTe, MgCaCaTe, CaCaCaTe, SrCaCaTe, BaCaCaTe, ZnSrCaTe, CdSrCaTe, PbSrCaTe, MgSrCaTe, CaSrCaTe, SrSrCaTe, BaSrCaTe, ZnBaCaTe, CdBaCaTe, PbBaCaTe, MgBaCaTe, CaBaCaTe, SrBaCaTe, BaBaCaTe, ZnZnSrTe, CdZnSrTe, PbZnSrTe, MgZnSrTe, CaZnSrTe, SrZnSrTe, BaZnSrTe, ZnCdSrTe, CdCdSrTe, PbCdSrTe, MgCdSrTe, CaCdSrTe, SrCdSrTe, BaCdSrTe, ZnPbSrTe, CdPbSrTe, PbPbSrTe, MgPbSrTe, CaPbSrTe, SrPbSrTe, BaPbSrTe, ZnMgSrTe, CdMgSrTe, PbMgSrTe, MgMgSrTe, CaMgSrTe, SrMgSrTe, BaMgSrTe, ZnCaSrTe, CdCaSrTe, PbCaSrTe, MgCaSrTe, CaCaSrTe, SrCaSrTe, BaCaSrTe, ZnSrSrTe, CdSrSrTe, PbSrSrTe, MgSrSrTe, CaSrSrTe, SrSrSrTe, BaSrSrTe, ZnBaSrTe, CdBaSrTe, PbBaSrTe, MgBaSrTe, CaBaSrTe, SrBaSrTe, BaBaSrTe, ZnZnBaTe, CdZnBaTe, PbZnBaTe, MgZnBaTe, CaZnBaTe, SrZnBaTe, BaZnBaTe, ZnCdBaTe, CdCdBaTe, PbCdBaTe, MgCdBaTe, CaCdBaTe, SrCdBaTe, BaCdBaTe, ZnPbBaTe, CdPbBaTe, PbPbBaTe, MgPbBaTe, CaPbBaTe, SrPbBaTe, BaPbBaTe, ZnMgBaTe, CdMgBaTe, PbMgBaTe, MgMgBaTe, CaMgBaTe, SrMgBaTe, BaMgBaTe, ZnCaBaTe, CdCaBaTe, PbCaBaTe, MgCaBaTe, CaCaBaTe, SrCaBaTe, BaCaBaTe, ZnSrBaTe, CdSrBaTe, PbSrBaTe, MgSrBaTe, CaSrBaTe, SrSrBaTe, BaSrBaTe, ZnBaBaTe, CdBaBaTe, PbBaBaTe, MgBaBaTe, CaBaBaTe, SrBaBaTe, BaBaBaTe.

With regard to II-VI semiconductors, it is provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element according to the invention that the second semiconductor material is a binary compound composed of two chemical elements chemical element is selected from the group consisting of B, Al, Ga, In, Tl, Sc and Y and wherein the second chemical element is selected from the group consisting of N, P, As, Sb and Bi the following possibilities for chemical compounds for such a second semiconductor material: BN, AlN, GaN, InN, TlN, ScN, YN, BP, AlP, GaP, InP, TlP, ScP, YP, BAs, AlAs, GaAs, InAs, TlAs, ScAs , YAs, Bsb, AlSb, GaSb, InSb, TlSb, ScSb, YSb, BBi, AlBi, GaBi, InBi, 5TlBi, ScBi, YBi.

Analogously, it is provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element according to the invention that the second semiconductor material is a ternary compound of three chemical elements, wherein the first chemical element and the second chemical element are selected from the group consisting of B, Al, Ga, In, Tl, Sc and Y and wherein the third chemical element is selected from the group consisting of N, P, As, Sb and Bi. Accordingly, the following possibilities arise in principle for chemical compounds for such a second semiconductor material: BBN, AlBN, GaBN, InBN, TlBN, ScBN, YBN, BAlN, AlAlN, GaAlN, InAlN, TlAlN, ScAlN, YAlN, BGaN, AlGaN, GaGaN, InGaN, TlGaN, ScGaN, 20 YGaN, BInN, AlInN, GaInN, InInN, TlInN, ScInN, YInN, BTlN, AlTlN, GaTlN, InTlN, TlTlN, ScTlN, YTlN, BScN, AlScN, GaScN, InScN, TlScN, ScScN, YScN, B YN, AlYN, GaYN, InYN, TlYN, ScYN, YYN, BBP, AlBP, GaBP, InBP, TlBP, ScBP, YBP, BAlP, AlAlP, GaAlP, InAlP, TlAlP, ScAlP, YAlP, BGaP, AlGaP, GaGaP, InGaP, 25 TlGaP, ScGaP, YGaP, BInP, AlInP, GaInP, InInP, TlInP, ScInP, YInP, BTlP, AlTlP, GaTlP, InTlP, TlTlP, ScTlP, YTlP, BScP, AlScP, GaScP, InScP, TlScP, ScScP, YScP, BYP , AlYP, GaYP, InYP, TlYP, ScYP, YYP, BBAs, AlBAs, GaBAs, InBAs, TlBAs, ScBAs, YBAs, BAlAs, AlAlAs, GaAlAs, InAlAs, TlAlAs, ScAlAs, 30YAlAs, BGaAs, AlGaAs, GaGaAs, InGaAs, TlGaAs, ScGaAs, YGaAs, BInAs, AlInAs, GaInAs, InInAs, TlInAs, ScInAs, YInAs, BTlAs, AlTlAs, GaTlAs, InTlAs, TlTlAs, ScTlAs, YTlAs, BScAs, AlScAs, GaScAs, InScAs, TlScAs, ScScAs, YScAs, ByAs, AlYAs, GaYAs, InYAs, TlYAs, ScYAs, YYAs, BBSb, AlBSb, GaBSb, InBSb, TlBSb, ScBSb, YBSb, BAlSb, AlAlSb, GaAlSb, InAlSb, TlAlSb, ScAlSb, YAlSb, BGaSb, AlGaSb, GaGaSb, InGaSb, TlGaSb ScGaSb, YGaSb, BInSb, AlInSb, GaInSb, InInSb, TInInsb, ScInSb, YInSb, BTlSb, AlTlSb, GaTlSb, InTlSb, TlTlSb, ScTlSb, YTlSb, BScSb, AlScSb , GaScSb, InScSb, TlScSb, ScScSb, YScSb, BYSb, AlYSb, GaYSb, InYSb, TlYSb, ScYSb, YYSb, BBBi, AlBBi, GaBBi, InBBi, TlBBi, ScBBi, YBBi, BAlBi, AlAlBi, GaAlBi, InAlBi, TlAlBi, ScAlBi , YAlBi, BGaBi, AlGaBi, GaGaBi, InGaBi, TlGaBi, ScGaBi, YGaBi, BInBi, AlInBi, GaInBi, InInBi, TlInBi, ScInBi, YInBi, BTlBi, AlTlBi, GaTlBi, InTlBi, TlTlBi, ScTlBi, YTlBi, BScBi, AlScBi, GaScBi, InScBi, TlScBi, ScScBi, YScBi, BYBi, AlYBi, GaYBi, InYBi, TlYBi, ScYBi, YYBi.

Analogously, it is provided in a preferred embodiment of the method according to the invention or in a preferred embodiment of the electrically functionalized semiconductor element that the second semiconductor material is a quaternary compound of four chemical elements, wherein the first chemical element, the second chemical element and the third chemical element are selected from the group consisting of B, Al, Ga, In, Tl, Sc, and Y, and wherein the fourth chemical element is selected from the group consisting of N, P, As, Sb, and Bi basically the following possibilities for chemical compounds for such a second semiconductor material: BBBN, AlBBN, GaBBN, InBBN, TlBBN, ScBBN, YBBN, BAlBN, AlAlBN, GaAlBN, InAlBN, TlAlBN, ScAlBN, YAlBN, BGaBN, AlGaBN, GaGaBN, InGaBN, TlGaBN, ScGaBN, YGaBN, BInBN, AlInBN, GaInBN, InInBN, TlInBN, ScInBN, YInBN, BTlBN, AlTlBN, GaTlBN, InTlBN, TlTlBN , ScTlBN, YTlBN, BScBN, AlScBN, GaScBN, InScBN, TlScBN, ScScBN, YScBN, BYBN, AlYBN, GaYBN, InYBN, TlYBN, ScYBN, YYBN, BBAlN, AlBAlN, GaBlN, InBlN, TlBAlN, ScBAlN, YbaIn, BAlAlN, AlAlAlN , GaAlAlN, InAlAlN, TlAlAlN, ScAlAlN, YAlAlN, BGaAlN, AlGaAlN, GaGaAlN, InGaAlN, TlGaAlN, ScGaAlN, YGaAlN, BInAlN, AlInAlN, GaInAlN, InInAlN, TlInAlN, ScInAlN, YInAlN, BTlAlN, AlTlAlN, GaTlAlN, InTlAlN, TlTlAlN, ScTlAlN , YTlAlN, BScAlN, AlScAlN, GaScAlN, InScAlN, TlScAlN, ScScAlN, YScAlN, BYAlN, AlYAlN, GaYAlN, InYAlN, TlYAlN, ScYAlN, YYAlN, BBGaN, AlBGaN, GaBGaN, InBGaN, TlBGaN, ScBGaN, YBGaN, Balgan, AlAlGaN, GaAlGaN , InAlGaN, TlAlGaN, ScAlGaN, YAlGaN, BGaGaN, AlGaGaN, GaGaGaN, InGaGaN, TlGaGaN, ScGaGaN, YGaGaN, BInGaN, AlInGaN, GaInGaN, InInGaN, TlInGaN, ScInGaN, Yingan, BTlGaN, AlTlGaN, GaTlGaN, InTlGaN, TlTlGaN, ScTlGaN, YTlGaN , BScGaN, AlScGaN, GaScGaN, InScGaN, TlScGaN, ScScGaN, YScGaN, BYGaN, AlYGaN, GaYGaN, InYGaN, TlYGaN, ScYGaN, YYGaN, BBnN, AlBInN, GaBInN, InBInN, TlBInN, ScBInN, YBInN, BA lInN, AlAlInN, GaAlInN, InAlInN, TlAlInN, ScAlInN, YAlInN, BGaInN, AlGaInN, GaGaInN, InGaInN, TlGaInN, ScGaInN, YGaInN, BInInN, AlInInN, GaInInN, InInInN, TlInInN, ScInInN, YInInN, BTlInN, AlTlInN, GaTlInN, InTlInN, TlTlInN, ScTlInN, YTlInN, BScInN, AlScInN, GaScInN, InScInN, TlScInN, ScScInN, YScInN, ByInN, AlYInN, GaYInN, InYInN, TlYInN, ScYInN, YYInN, BBTlN, AlBtlN, GaBTlN, InBtlN, TlBTlN, ScBtlN, YBtlN, BaLTlN, AlAlTlN, GaAlTlN, InAlTlN, TlAlTlN, ScAlTlN, YAlTlN, BGaTlN, AlGaTlN, GaGaTlN, InGaTlN, TlGaTlN, ScGaTlN, YGaTlN, BInTlN, AlInTlN, GaInTlN, InInTlN, TlInTlN, ScInTlN, YInTlN, BTlTlN, AlTlTlN, GaTlTlN, InTlTlN, TlTlTlN, ScTlTlN, YTlTlN, BScTlN, AlScTlN, GaScTlN, InScTlN, TlScTlN, ScScTlN, YScTlN, BYTlN, AlYTlN, GaYTlN, InYTlN, TlYTlN, ScYTlN, YYTlN, BBScN, AlBScN, GaBScN, InBScN, TlBScN, ScBScN, YBScN, BAlScN, AlAlScN, GaAlScN, InAlScN, TlAlScN, ScAlScN, YAlScN, BGaScN, AlGaScN, GaGaScN, InGaScN, TlGaScN, ScGaScN, YGaScN, BInScN, AlInScN, GaInScN, InInScN, TlInScN, ScInScN, Y InScN, BTlScN, AlTlScN, GaTlScN, InTlScN, TlTlScN, ScTlScN, YTlScN, BScScN, AlScScN, GaScScN, InScScN, TlScScN, ScScScN, YScScN, BYScN, AlYScN, GaYScN, InYScN, TlYScN, ScYScN, YYScN, BBYN, ALBYN, GaBYN, InBYN, TlBYN, ScBYN, YBYN, BAlYN, AlAlYN, GaAlYN, InAlYN, TlAlYN, ScAlYN, YAlYN, BGaYN, AlGaYN, GaGaYN, InGaYN, TlGaYN, ScGaYN, YGaYN, BInYN, AlInYN, GaInYN, InInYN, TlInYN, ScInYN, YInYN, BTlYN, AlTlYN, GaTlYN, InTlYN, TlTlYN, ScTlYN, YTlYN, BScYN, AlScYN, GaScYN, InScYN, TlScYN, ScScYN, YScYN, BYYN, AlYYN, GaYYN, InYYN, TlYYN, ScYYN, YYYN, BBBP, AlBBP, GaBBP, InBBP, TlBBP, ScBBP, YBBP, BAlBP, AlAlBP, GaAlBP, InAlBP, TlAlBP, ScAlBP, YAlBP, BGaBP, AlGaBP, GaGaBP, InGaBP, TlGaBP, ScGaBP, YGaBP, BInBP, AlInBP, GaInBP, InInBP, TlInBP, ScInBP, YInBP, BTlBP, AlTIBP, GaTlBP, InTlBP, TlTlBP, ScTlBP, YTlBP, BScBP, AlScBP, GaScBP, InScBP, TlScBP, ScScBP, YScBP, BYBP, AlYBP, GaYBP, InYBP, TlYBP, ScYBP, YYBP, BBAlP, AlBAlP, GaBAlP, InBlAlP, TlBAlP, ScBAlP, YbaIP, BAlAlP, AlAlAlP, GaAlAlP, InAlAlP, TlAlAlP, ScAlAlP, YAlAlP, BGaAlP, AlGaAlP, GaGaAlP, InGaAlP, TlGaAlP, ScGaAlP, YGaAlP, BInAlP, AlInAlP, GaInAlP, InInAlP, TlInAlP, ScInAlP, YInAlP, BTlAlP, AlTlAlP, GaTlAlP, InTlAlP, TlTlAlP, ScTlAlP, YTlAlP, BScAlP, AlScAlP, GaScAlP, InScAlP, TlScAlP, ScScAlP, YScAlP, BYAlP, AlYAlP, GaYAlP, InYAlP, TlYAlP, ScYAlP, YYAlP, BBGaP, AlBGaP, GaBGaP, InBGaP, TlBGaP, ScBGaP, YBGaP, BAlGaP, AlAlGaP, GaAlGaP, InAlGaP, TlAlGaP, ScAlGaP, YAlGaP, BGaGaP, AlGaGaP, GaGaGaP, InGaGaP, TlGaGaP, ScGaGaP, YGaGaP, BInGaP, AlInGaP, GaInGaP, InInGaP, TlInGaP, ScInGaP, YInGaP, BTlGaP, AlTlGaP, GaTlGaP, InTlGaP, TlTlGaP, ScTlGaP, YTlGaP, BScGaP, AlScGaP, GaScGaP, InScGaP, TlScGaP, ScScGaP, YScGaP, BYGaP, AlYGaP, GaYGaP, InYGaP, TlYGaP, ScYGaP, YYGaP, BBInP, AlBInP, GaBInP, InBInP, TlBInP, ScBInP, YBInP, BAlInP, AlAlInP, GaAlInP, InAlInP, TlAlInP, ScAlInP, YAlInP, BGaInP, AlGaInP, GaGaInP, InGaInP, TlGaInP, ScGaInP, YGaInP, BInInP, AlInInP, GaInInP, InInInP, TlInInP, ScInInP, YInInP, BTlInP, AlTlInP, GaTlInP, InTlInP, TlTlInP, ScTlInP, YTlInP, BScInP, AlScInP, GaScInP, InScInP, TlScInP, ScScInP, YScInP, BYInP, AlYInP, GaYInP, InYInP, TlYInP, ScYInP, YYInP, BBTlP, AlBTlP, GaBTlP, InBTlP, TlBTlP, ScBTlP, YBTlP, BAlTlP, AlAlTlP, GaAlTlP, InAlTlP, TlAlTlP, ScAlTlP, YAlTlP, BGaTlP, AlGaTlP, GaGaTlP, InGaTlP, TlGaTlP, ScGaTlP, YGaTlP, BInTlP, AlInTlP, GaInTlP, InInTlP, TlInTlP, ScInTlP, YInTlP, BTlTlP, AlTlTlP, GaTlTlP, InTlTlP, TlTlTlP, ScTlTlP, YTlTlP, BScTlP, AlScTlP, GaScTlP, InScTlP, TlScTlP, ScScTlP, YScTlP, BYTlP, AlYTlP, GaYTlP, InYTlP, TlYTlP, ScYTlP, YYTlP, BBScP, AlBScP, GaBScP, InBScP, TlBScP, ScBScP, YBScP, BAlScP, AlAlScP, GaAlScP, InAlScP, TlAlScP, ScAlScP, YAlScP, BGaScP, AlGaScP, GaGaScP, InGaScP, TlGaScP, ScGaScP, YGaScP, BInScP, AlInScP, GaInScP, InInScP, TlInScP, ScInScP, YInScP, BTlScP, AlTlScP, GaTlScP, InTlScP, TlTlScP, ScTlScP, YTlScP, BScScP, AlScScP, GaScScP, InScScP, TlScScP, ScScScP, YScScP, BYScP, AlYScP, GaYScP, InYScP, TlYScP, ScYScP, YYScP, BBYP, AlBYP, GaBYP, InBYP, TlByP, ScByP, YBYP, BAlYP, AlAlYP, GaAlYP, InAlYP, TlAlYP, ScAlYP, YAlYP, BGaYP, AlGaYP, GaGaYP, InGaYP, TlGaYP, ScGaYP, YGaYP, BInYP, AlInYP, GaInYP, InInYP, TlInYP, ScInYP, YInYP, BTlYP, AlTlYP, GaTlYP, InTlYP, TlTlYP, ScTlYP, YTlYP, BScYP, AlScYP, GaScYP, InScYP, TlScYP, ScScYP, YScYP, BYYP, AlYYP, GaYYP, InYYP, TlYYP, ScYYP, YYYP, BBBAs, AlBBAs, GaBBAs, InBBAs, TlBBAs, ScBBAs, YBBAs, BAlBAs, AlAlBAs, GaAlBAs, InAlBAs, TlAlBAs, ScAlBAs, YAlBAs, BGaBAs, AlGaBAs, GaGaBAs, InGaBAs, TlGaBAs, ScGaBAs, YGaBAs, BInBAs, AlInBAs, GaInBAs, InInBAs, TlInBAs, ScInBAs, YInBAs, BTlBAs, AlTlBAs, GaTlBAs, InTlBAs, TlTlBAs, ScTlBAs, YTlBAs, BScBAs, AlScBAs, GaScBAs, InScBAs, TlScBAs, ScScBAs, YScBAs, BYBAs, AlYBAs, GaYBAs, InYBAs, TlYBAs, ScYBAs, YYBAs, BBAlAs, AlBAlAs, GaBAlAs, InBAlAs, TlBAlAs, ScBAlAs, YBAlAs, BAlAlAs, AlAlAlAs, GaAlAlAs, InAlAlAs, TlAlAlAs, ScAlAlAs, YAlAlAs, BGaAlAs, AlGaAlAs, GaGaAlAs, InGaAlAs, TlGaAlAs, ScGaAlAs, YGaAlAs, BInAlAs, AlInAlAs, GaInAlAs, InInAlAs, TlInAlAs, ScInAlAs, YInAlAs, BTlAlAs, AlTlAlAs, GaTlAlAs, InTlAlAs, TlTlAlAs, ScTlAlAs, YTlAlAs, BScAlAs, AlScAlAs, GaScAlAs, InScAlAs, TlScAlAs, ScScAlAs, YScAlAs, BYAlAs, AlYAlAs, GaYAlAs, InYAlAs, TlYAlAs, ScYAlAs, YYAlAs, BBGaAs, AlBGaAs, GaBGaAs, InBGaAs, TlBGaAs, ScBGaAs, YBGaAs, BAlGaAs, AlAlGaAs, GaAlGaAs, InAlGaAs, TlAlGaAs, ScAlGaAs, YAlGaAs, BGaGaAs, AlGaGaAs, GaGaGaAs, InGaGaAs, TlGaGaAs, ScGaGaAs, YGaGaAs, BInGaAs, AlInGaAs, GaInGaAs, InInGaAs, TlInGaAs, ScInGaAs, YInGaAs, BTlGaAs, AlTlGaAs, GaTlGaAs, InTlGaAs, TlTlGaAs, ScTlGaAs, YTlGaAs, BScGaAs, AlScGaAs, GaScGaAs, InScGaAs, TlScGaAs, ScScGaAs, YScGaAs, BYGaAs, AlYGaAs, GaYGaAs, InYGaAs, TlYGaAs, ScYGaAs, YYGaAs, BBInAs, AlBInAs, GaBInAs, InBInAs, TlBInAs, ScBInAs, YBInAs, BAlInAs, AlAlInAs, GaAlInAs, InAlInAs, TlAlInAs, ScAlInAs, YAlInAs, BGaInAs, AlGaInAs, GaGaInAs, InGaInAs, TlGaInAs, ScGaInAs, YGaInAs, BInInAs, AlInInAs, GaInInAs, InInInAs, TlInInAs, ScInInAs, YInInAs, BTlInAs, AlTlInAs, GaTlInAs, InTlInAs, TlTlInAs, ScTlInAs, YTlInAs, BScInAs, AlScInAs, GaScInAs, InScInAs, TlScInAs, ScScInAs, YScInAs, BYInAs, AlYInAs, GaYInAs, InYInAs, TlYInAs, ScYInAs, YYInAs, BBTlAs, AlBTlAs, GaBTlAs, InBTlAs, TlBTlAs, ScBTlAs, YBTlAs, BAlTlAs, AlAlTlAs, GaAlTlAs, InAlTlAs, TlAlTlAs, ScAlTlAs, YAlTlAs, BGaTlAs, AlGaTlAs, GaGaTlAs, InGaTlAs, TlGaTlAs, ScGaTlAs, YGaTlAs , BInTlAs, AlInTlAs, GaInTlAs, InInTlAs, TlInTlAs, ScInTlAs, YInTlAs, BTlTlAs, AlTlTlAs, GaTlTlAs, InTlTlAs, TlTlTlAs, ScTlTlAs, YTlTlAs, BScTlAs, AlScTlAs, GaScTlAs, InScTlAs, TlScTlAs, ScScTlAs, YScTlAs, BYTlAs, AlYTlAs, GaYTlAs, InYTlAs , TlYTlAs, ScYTlAs, YYTlAs, BBScAs, AlBScAs, GaBScAs, InBScAs, TlBScAs, ScBScAs, YBScAs, BAlScAs, AlAlScAs, GaAlScAs, InAlScAs, TlAlScAs, ScAlScAs, YAlScAs, BGaScAs, AlGaScAs, GaGaScAs, InGaScAs, TlGaScAs, ScGaScAs, YGaScAs, BInScAs , AlInScAs, GaInScAs, InInScAs, TlInScAs, ScInScAs, YInScAs, BTlScAs, AlTlScAs, GaTlScAs, InTlScAs, TlTlScAs, ScTlScAs, YTlScAs, BScScAs, AlScScAs, GaScScAs, InScScAs, TlScScAs, ScScScAs, YScScAs, BYScAs, AlYScAs, GaYScAs, InYScAs, TlYScAs , ScYScAs, YYScAs, BBYAs, AlBYAs, GaBYAs, InBYAs, TlBYAs, ScBYAs, YBYAs, BAlYAs, AlAlYAs, GaAlYAs, InAlYAs, TlAlYAs, ScAlYAs, YAlYAs, BGaYAs, AlGaYAs, GaGaYAs, InGaYAs, TlGaYAs, ScGaYAs, YGaYAs, BInYAs, AlInYAs , GaInYAs, InInYAs, TlInYAs, ScInYAs, YInYAs, BTlYAs, AlTlYAs, GaTlYAs, InTlYAs, TlTlYAs, ScTlYAs, YTlYAs, BScYAs, AlScYAs, GaScYAs, InScYAs, TlScYAs, ScScYAs, YScYAs, BYYAs, AlYYAs, GaYYAs, InYYAs, TlYYAs, ScYYAs, YYYAs, BBBSb, AlBBSb, GaBBSb, InBBSb, TlBBSb, ScBBSb, YBBSb, BAlBSb, AlAlBSb, GaAlBSb, InAlBSb, TlAlBSb, ScAlBSb, YAlBSb, BGaBSb, AlGaBSb, GaGaBSb, InGaBSb, TlGaBSb, ScGaBSb, YGaBSb, BInBSb, AlInBSb, GaInBSb, InInBSb, TlInBSb, ScInBSb, YInBSb, BTlBSb, AlTlBSb, GaTlBSb, InTlBSb, TlTlBSb, ScTlBSb, YTIBb, BScBSb, AlScBSb, GaScBSb, InScBSb, TlScBSb, ScScBSb, YScBSb, BYBSb, AlYBSb, GaYBSb, InYBSb, TlYBSb, ScYBSb, YYBSb, BBAlSb, AlBAlSb, GaBAlSb, InBAlSb, TlBAlSb, ScBAlSb, YBAlSb, BAlAlSb, AlAlAlSb GaAlAlSb, InAlAlSb, TlAlAlSb, ScAlAlSb, YAlAlSb, BGaAlSb, AlGaAlSb, GaGaAlSb, InGaAlSb, TlGaAlSb, ScGaAlSb, YGaAlSb, BInAlSb, AlInAlSb, GaInAlSb, InInAlSb, TlInAlSb, ScInAlSb, YInAlSb, BTlAlSb, AlTlAlSb, GaTlAlSb, InTlAlSb, TlTlAlSb, ScTlAlSb, YTlAlSb, BScAlSb, AlScAlSb, GaScAlSb, InScAlSb, TlScAlSb, ScScAlSb, YScAlSb, BYAlSb, AlYAlSb, GaYAlSb, InYAlSb, TlYAlSb, ScYAlSb, YYAlSb, BBGaSb, AlBGaSb, GaBGaSb, InBGaSb, TlBGaSb, ScBGaSb, YBGaSb, BAlGaSb, AlAlGaSb, GaAlGaSb, InAlGaSb, TlAlGaSb, ScAlGaSb, YAlGaSb, BGaGaSb, AlGaGaSb, GaGaGaSb, InGaGaSb, TlGaGaSb, ScGaGaSb, YGaGaSb, BInGaSb, AlInGaSb, GaInGaSb, InInGaSb, TlInGaSb, ScInGaSb, YInGaSb, BTlGaSb, AlTlGaSb, GaTlGaSb, InTlGaSb, TlTlGaSb, ScTlGaSb, YTlGaSb, BScGaSb, AlScGaSb, GaScGaSb, InScGaSb, TlScGaSb, ScScGaSb, YScGaSb, BYGaSb, AlYGaSb, GaYGaSb, InYGaSb, TlYGaSb, ScYGaSb, YYGaSb, BBInSb, AlBInSb, GaBInSb, InBInSb, TlBInSb, ScBInSb, YBInSb, BAlInSb, AlAlInSb, GaAlInSb, InAlInSb, TlAlInSb, ScAlInSb, YAlInSb, BGaInSb, AlGaInSb, GaGaInSb, InGaInSb, TlGaInSb, ScGaInSb, YGaInSb, BInInSb, AlInInSb, GaInInSb, InInInSb, TlInInSb, ScInInSb, YInInSb, BTlInSb, AlTlInSb, GaTlInSb, InTlInSb, TlTlInSb, ScTlInSb, YTlInSb, BScInSb, AlScInSb, GaScInSb, InScInSb, TlScInSb, ScScInSb, YScInSb, BYInSb, AlYInSb, GaYInSb, InYInSb, TlYInSb, ScYInSb, YYInSb, BBTlSb, AlBTlSb, GaBTlSb, InBTlSb, TlBTlSb, ScBTlSb, YBTlSb, BAlTlSb, AlAlTlSb, GaAlTlSb, InAlTlSb, TlAlTlSb, ScAlTlSb, YAlTlSb, BGaTlSb, AlGaTlSb, GaGaTlSb, InGaTlSb, TlGaTlSb, ScGaTlSb, YGaTlSb, BInTlSb, AlInTlSb, GaInTlSb, InInTlSb, TlInTlSb, ScInTlSb, YInTlSb, BTlTlSb, AlTlTlSb, GaTlTlSb, InTlTlSb, TlTlTlSb, ScTlTlSb, YTlTlSb, BScTlSb, AlScTlSb, GaScTlSb, InScTlSb, TlScTlSb, ScScTlSb, YScTlSb, BYTlSb, AlYTlSb, GaYTlSb, InYTlSb, TlYTlSb, ScYTlSb, YYTlSb, BBScSb, AlBScSb , GaBScSb, InBScSb, TlBScSb, ScBScSb, YBScSb, BAlScSb, AlAlScSb, GaAlScSb, InAlScSb, TlAlScSb, ScAlScSb, YAlScSb, BGaScSb, AlGaScSb, GaGaScSb, InGaScSb, TlGaScSb, ScGaScSb, YGaScSb, BInScSb, AlInScSb, GaInScSb, InInScSb, TlInScSb, ScInScSb , YInScSb, BTlScSb, AlTlScSb, GaTlScSb, InTlScSb, TlTlScSb, ScTlScSb, YTlScSb, BScScSb, AlScScSb, GaScScSb, InScScSb, TlScScSb, ScScScSb, YScScSb, BYScSb, AlYScSb, GaYScSb, InYScSb, TlYScSb, ScYScSb, YYScSb, BBYSb, AlBYSb, GaBYSb , InBYSb, TIBYSB, ScBYSb, YBYSb, BAlYSb, AlAlYSb, GaAlYSb, InAlYSb, TlAlYSb, ScAlYSb, YAlYSb, BGaYSb, AlGaYSb, GaGaYSb, InGaYSb, TlGaYSb, ScGaYSb, YGaYSb, BInYSb, AlInYSb, GaInYSb, InInYSb, TlInYSb, ScInYSb, YInYSb , BTlYSb, AlTlYSb, GaTlYSb, InTlYSb, TlTlYSb, ScTlYSb, YTlYSb, BScYSb, AlScYSb, GaScYSb, InScYSb, TlScYSb, ScScYSb, YScYSb, Byysb, AlYYSb, GaYYSb, InYYSb, TlYYSb, ScYYSb, YYYSb, BBBBi, AlBBBi, GaBBBi, InBBBi , TlBBBi, ScBBBi, YBBBi, BAlBBi, AlAlBBi, GaAlBBi, InAlBBi, TlAlBBi, ScAlBBi, YAlBBi, BGaBBi, AlGaBBi, GaGaBBi, InGaBBi, TlGaBBi, ScGaBBi, YGaBBi, BInBBi, AlInBBi, GaInBBi, InInBBi, TlInBBi, ScInBBi, YInBBi, BTlBBi, AlTlBBi, GaTlBBi, InTlBBi, TlTlBBi, ScTlBBi, YTlBBi, BScBBi, AlScBBi, GaScBBi, InScBBi, TlScBBi, ScScBBi, YScBBi, BYBBi, AlYBBi, GaYBBi, InYBBi, TlYBBi, ScYBBi, YYBBi, BBAlBi, AlBAlBi, GaBAlBi, InBAlBi, TlBAlBi, ScBAlBi, YBAlBi, BAlAlBi, AlAlAlBi, GaAlAlBi, InAlAlBi, TlAlAlBi, ScAlAlBi, YAlAlBi, BGaAlBi, AlGaAlBi, GaGaAlBi, InGaAlBi, TlGaAlBi, ScGaAlBi, YGaAlBi, BInAlBi, AlInAlBi, GaInAlBi, InInAlBi, TlInAlBi, ScInAlBi, YInAlBi, BTlAlBi, AlTlAlBi, GaTlAlBi, InTlAlBi, TlTlAlBi, ScTlAlBi, YTlAlBi, BScAlBi, AlScAlBi, GaScAlBi, InScAlBi, TlScAlBi, ScScAlBi, YScAlBi, BYAlBi, AlYAlBi, GaYAlBi, InYAlBi, TlYAlBi, ScYAlBi, YYAlBi, BBGaBi, AlBGaBi, GaBGaBi, InBGaBi, TlBGaBi, ScBGaBi, YBGaBi, BAlGaBi, AlAlGaBi, GaAlGaBi, InAlGaBi, TlAlGaBi, ScAlGaBi, YAlGaBi, BGaGaBi, AlGaGaBi, Gaga Gabi, Inga Gabi, TlGaGaBi, ScGaGaBi, YGaGaBi, BInGaBi, AlInGaBi, GaInGaBi, InInGaBi, TlInGaBi, ScInGaBi, YInGaBi, BTlGaBi, AlTlGaBi, GaTlGaBi, InTlGaBi, TlTlGaBi, ScTlGaBi, YTlGaBi, BScGaBi, AlScGaBi, GaScGaBi, InScGaBi, TlScGaBi, ScScGaBi, YScGaBi, BYGaBi, AlYGaBi, GaYGaBi, InYGaBi, TlYGaBi, ScYGaBi, YYGaBi, BBInBi, AlBInBi, GaBInBi, InBInBi, TlBInBi, ScBInBi, YBInBi, BAlInBi, AlAlInBi, GaAlInBi, InAlInBi, TlAlInBi, ScAlInBi, YAlInBi, BGaInBi, AlGaInBi, GaGaInBi, InGaInBi, TlGaInBi, ScGaInBi, YGaInBi, BInInBi, AlInInBi, GaInInBi, InInInBi, TlInInBi, ScInInBi, YInInBi, BTlInBi, AlTlInBi, GaTlInBi, InTlInBi, TlTlInBi, ScTlInBi, YTlInBi, BScInBi, AlScInBi, GaScInBi, InScInBi, TlScInBi, ScScInBi, YScInBi, BYInBi, AlYInBi, GaYInBi, InYInBi, TlYInBi, ScYInBi, YYInBi, BBTlBi, AlBTlBi, GaBTlBi, InBTlBi, TlBTlBi, ScBTlBi, YBTlBi, BAlTlBi, AlAlTlBi, GaAlTlBi, InAlTlBi, TlAlTlBi, ScAlTlBi, YAlTlBi, BGaTlBi, AlGaTlBi, GaGaTlBi, InGaTlBi, TlGaTlBi, ScGaTlBi, YGaTlBi, BInTlBi, AlInTlBi, GaInTlBi, InInTlBi, TlInTlBi, ScInTlBi, YInTlBi, BTlTlBi, AlTlTlBi, GaTlTlBi, InTlTlBi, TlTlTlBi, ScTlTlBi, YTlTlBi, BScTlBi, AlScTlBi, GaScTlBi, InScTlBi, TlScTlBi, ScScTlBi, YScTlBi, BYTlBi, AlYTlBi, GaYTlBi, InYTlBi, TlYTlBi, ScYTlBi, YYTlBi, BBScBi, AlBScBi, GaBScBi, InBScBi, TlBScBi, ScBScBi, YBScBi, BAlScBi, AlAlScBi, GaAlScBi, InAlScBi, TlAlScBi, ScAlScBi, YAlScBi, BGaScBi, AlGaScBi, GaGaScBi, InGaScBi, TlGaScBi, ScGaScBi, YGaScBi, BInScBi, AlInScBi, GaInScBi, InInScBi, TlInScBi, ScInScBi, YInScBi, BTlScBi, AlTlScBi, GaTlScBi, InTlScBi, TlTlScBi, ScTlScBi, YTlScBi, BScScBi, AlScScBi, GaScScBi, InScScBi, TlScScBi, ScScScBi, YScScBi, BYScBi, AlYScBi, GaYScBi, InYScBi, TlYScBi, ScYScBi, YYScBi, BBYBi, AlBYBi, GaBYBi, InBYBi, TlBYBi, ScBYBi, YBYBi, BAlYBi, AlAlYBi, GaAlYBi, InAlYBi, TlAlYBi, ScAlYBi, YAlYBi, BGaYBi, AlGaYBi, GaGaYBi, InGaYBi, TlGaYBi, ScGaYBi, YGaYBi, BInYBi, AlInYBi, GaInYBi, InInYBi, TlInYBi, ScInYBi, YInYBi, BTlYBi, AlTlYBi, GaTlYBi, InTlYBi, TlTlYBi, ScTlYBi, YTlYBi, BScYBi, AlScYBi, GaScYBi, InScYBi, TlScYBi, ScScYBi, YScYBi, BYYBi, AlYYBi, GaYYBi, InYYBi, TlYYBi, ScYYBi, YYYBi.

In order to realize suitable second semiconductor materials, it is provided in a particularly preferred embodiment of the method according to the invention that the at least one substance is selected from the group consisting of diamond, graphite, GeC and BC. In particular, these substances are suitable for introduction when the first semiconductor material is Si. Furthermore, in a particularly preferred embodiment of the electrically functionalized semiconductor element according to the invention, it is provided that the second semiconductor material is a material selected from the group consisting of diamond, GeC, ZnO, ZnS, SnC, GaP, InP, GaAs, AlGaAs, AlInAs, GaInP, BP, AlP, AlAs, GaP, CdSe, CdS, ZnO, ZnSe, ZnS, ZnTe, CuCl, SnS ₂ , TiO ₂ , Cu ₂ O, SnO ₂ , BaTiO ₃ , SrTiO ₂ , LiNbO ₃ , GaSe, La ₂ CuO ₄ , NiO, InGaP, AlInAs, GaAsP, AlGaN, AlGaP, InGaN, CdZnTe, HgZnTe, GaInSb, GaInAsP, GaInAs, AlAs, ZnSe, and Cu (In, Ga) Se ₂ .

As already stated, the electrically functionalized semiconductor element according to the invention is suitable for use in solar cells and detectors. In this case, the conductive structures can ensure that minority charge carriers from the volume of the main body are conducted to an emitter contact, which electrically contacts an emitter. The main body preferably has the emitter in the region of the upper side. The emitter can be produced in a manner known per se by suitable doping. The remaining area of the main body, which consists of the first semiconductor material, forms a base of the solar cell. Since the conductive structures contact the top electrically, the emitter contact only has to electrically contact the top. Preferably, the emitter contact is arranged even on the top.

Accordingly, a solar cell according to the invention is provided, comprising an inventive electrically functionalized semiconductor element, wherein an upper side electrically contacting emitter contact is provided, which is preferably arranged on the upper side. An important point in solar cells according to the invention is to exclude short circuits between base and emitter by the electrically conductive structures of the second semiconductor material. Respectively. ensure that the minority carriers can flow through the conductive structures only to the emitter and not to the base. Here, minority charge carriers are to be understood as those in the first semiconductor material, since, as already explained, these minority charge carriers can become majority carriers in the charge cloud forming from the second semiconductor material through the conductive structures. Therefore, it is provided in a preferred embodiment of the solar cell according to the invention that on the underside an insulating layer is arranged, which is electrically insulating at least for minority charge carriers in the first semiconductor material, and that a base contact is provided which is arranged in sections on the insulating layer, the underside opposite , Thus, an electrical conduction of the minority charge carriers from the emitter to the base contacts is prevented by the insulating layer. Such an insulating layer can be produced with little effort, which has a favorable effect on the production costs of such a solar cell according to the invention. In principle, the insulation layer can be electrically insulating both for the minority charge carriers and for the majority charge carriers.

A particularly elegant way of deliberately preventing the flow of minority carriers to the base is to provide a known sequence of intrinsic and doped hetero layers as the isolation layer. Typically, such heterolayers can be produced by CVD or applied to the bottom. For example, can be generated as a hetero layer, an amorphous Si layer. The heterolayer shields unwanted minority carriers and thus prevents recombination and thus the loss of charge carriers. Therefore, in a preferred embodiment of the solar cell according to the invention, it is provided that the insulating layer is a heterolayer which forms a heterojunction with both the first semiconductor material and the second semiconductor material.

In any case, in order to be able to ensure an electrical contact between the base and the main body without contacting the electrically conductive structures of the base, it is provided in a preferred embodiment of the solar cell according to the invention, that local connection contacts are provided, the insulating layer (eg Si0 or Si ₃ N ₄ ) and electrically contact the underside of the base body only at those points which consist of the first semiconductor material, wherein the local connection contacts are electrically connected to the base contact.

A simple possibility for producing such contacts is to locally melt the insulation layer by means of a laser and thus to allow a contacting of the underside by the base contact. Such laser generated contacts are also referred to as Laser Fired Contacts (LFC). According to the invention, the laser is used only outside the regions of grain boundaries or the local contacts are generated only outside the regions of grain boundaries in order to prevent the contacting of conductive structures. Accordingly, it is provided in a preferred embodiment of the solar cell according to the invention that the local connection contacts are part of the base contact. Another way of largely avoiding contact of the conductive structures with the base, but with a small percentage of such undesired contacts, is to randomize the local interconnect contacts across the bottom. If an isolation layer is present, it will be broken through the local interconnect contacts at random locations according to the random distribution of the local interconnect contacts. In this way, although some connection contacts will be arranged on grain boundaries and thus contact conductive structures, but usually a large majority of the connection contacts will not contact grain boundaries or conductive structures. The great advantage of this type of arrangement of the connection contacts is the low cost and corresponding to the low production costs, since the concrete present grain structure of the body remains deliberately completely disregarded. It is therefore provided in a preferred embodiment of the solar cell according to the invention that a plurality of local connection contacts is provided, which connection contacts are arranged randomly distributed on the bottom and connect the bottom electrically to a base contact.

Another method to prevent the flow of minority carriers through the conductive structures to the base contact, is the targeted interruption of the conductive structures in the region of the bottom or in the direction of the top to bottom viewed just before the bottom. This is e.g. by targeted bombardment of the body at the points of the conductive structures by means of laser possible. In this case, the laser locally melts the main body together with conductive structures, whereby the basic body recrystallizes locally. Accordingly, it is provided in a preferred embodiment of the solar cell according to the invention, that a base contact is provided, which electrically contacts the bottom, wherein the conductive structures between the bottom and the top are interrupted by locally recrystallized areas. On an insulating layer can be omitted here. On the other hand, information is needed about where the conductive structures are in the body, which can be ensured with fluoroscopy in the infrared range.

No information as to where the conductive structures are in the body is needed when applying an etching tincture that specifically attacks the phase boundary between the two semiconductor materials, thus negating the line to the base contact.

It should be noted that electrically functionalized semiconductor elements according to the invention can of course not only be used for solar cells, but are also of interest for other applications of semiconductor elements, e.g. in detectors and transistors. It may also be of interest that the conductive structures contact not only the upper side but also the lower side electrically.

According to the invention, the conductive structures in solar cells can also be used ideally as electrical vias, in particular in order to connect a plurality of emitters to one another. This is e.g. possible if two opposite emitters are provided in the main body - one emitter in the region of the upper side, the other emitter in the region of the lower side. According to the invention, a solar cell is provided, comprising an inventive electrically functionalized semiconductor element, wherein in the base body an emitter in the region of the top and a further emitter are provided in the region of the bottom and arranged between the emitters base, wherein the emitters of the two sides by the conductive Structures are electrically connected to each other.

This makes it possible in particular to provide emitter contacts, only on one side of the solar cell, wherein the emitter contacts need only contact an emitter directly electrically. The electrical connection to the other emitter is guaranteed by the conductive structures. In particular, the emitter contacts can thus be arranged on the same side of the solar cell as the base contacts, which results in an improved electrical connection possibility of the solar cell. In addition, the side of the solar cell opposite this side is not shaded, since neither base nor emitter contacts are arranged there, which has a favorable effect on the efficiency of the solar cell. It's just to make sure that the base contacts only contact the base and not the emitter. The latter can be ensured, for example, by means of local insulations, in particular of SiO ₂ and Si ₃ N ₄ .

Another possibility provided by the electrical vias is to provide a plurality of emitters electrically connected to one another in the base body via the conductive structures and to optimize the arrangement of emitter contacts and base contacts with respect to shading on opposite sides of the solar cell. In this way, the solar cell according to the invention can be designed as a bifacial solar cell, i. the solar cell provides power when illuminated from opposite sides. In order to distribute the burden of shading as evenly as possible, the emitter contacts and base contacts are preferably arranged on opposite sides of the solar cell.

Therefore, it is provided in a preferred embodiment of the solar cell according to the invention that at least one emitter contact is provided which electrically contacts the top or the bottom and is disposed on one side of the solar cell in the region of the top or bottom of the base body, and that at least one base contact is provided, which only electrically contacts the base and on the same side of the solar cell as the at least one emitter contact is arranged or on an opposite side of the solar cell.

As already mentioned, the bending of the band edges, which occurs at the boundary between the first and second semiconductor material, seems to be highly responsible for the conductivity of the structures of a second semiconductor material, which is generally not electrically conductive, in the first semiconductor material. Accompanying this is an accumulation of electrical charge in the area of the interface between the first and second semiconductor material. In this case, locally high electrical charges can accumulate so that the associated electric fields can be used for further applications, eg for the manipulation or modulation of light. Therefore, the invention provides the use of an electrically functionalized semiconductor element according to the invention in an optical waveguide. Light signals conducted through the light guide are thus modulated by the accumulated charges or by the electric fields generated by the charges.

BRIEF DESCRIPTION OF THE FIGURES

The invention will now be explained in more detail with reference to exemplary embodiments. The drawings are exemplary and are intended to illustrate the inventive idea, but in no way restrict it or even reproduce it.

Showing:

1 a schematic plan view of a section of a grain and thus also grain boundaries having basic body of an electrically functionalized semiconductor element according to the invention

2 a schematic sectional view of a solar cell according to the invention

3 a schematic sectional view of another embodiment of the solar cell according to the invention

4 a schematic Schnittanischt another embodiment of a solar cell according to the invention with emitter and base contacts on the same side

5 a schematic Schnittanischt another embodiment of a solar cell according to the invention, which is designed as a bifacial solar cell

WAYS FOR CARRYING OUT THE INVENTION

1 shows a schematic view of a section of a base body 2 an electrically functionalized semiconductor element according to the invention 1 in supervision. The main body 2 is made of a first semiconductor material, for example Si, wherein the first semiconductor material may be locally differently doped. As in 1 is recognizable, is the main body 2 not single crystal, but has grains 11 . 11 ' . 11 '' and thus also grain boundaries 12 on, with the grain boundaries 12 in 1 are indicated by dashed lines. The grains 11 ' are in 1 the nearest neighbors of the grain 11 , The grains 11 '' are in 1 the next but one neighbor of the grain 11 , The grain boundaries 12 are with electrically conductive structures 5 (see. 2 and 3 ) of a second semiconductor element, for example with precipitates of Si ₃ N ₄ , decorated. Due to the very different band gaps - Si: about 1.1 eV, Si ₃ N ₄ : greater than or equal to 5 eV - there is a strong band bending at the phase boundary between the first and second semiconductor material. The band bending plays an essential role in ensuring the electrical conductivity of the structures 5 comes in the phase boundary. That is, contrary to the previously known, erroneously represented view that Si ₃ N ₄ - especially in Si - is not conductive, are the structures 5 of Si ₃ N ₄ - especially in Si - very well electrically conductive.

The conductive structures 5 are generated by a starting product, in particular a melt of the first semiconductor material is produced and at least one substance which is the second semiconductor material or which can form the second semiconductor material with the first semiconductor material is introduced into the starting product or during its production , For example, nitrogen can be deliberately introduced into an Si melt by exposing it to a nitrogen atmosphere, preferably at pressures greater than 5 bar, more preferably greater than or equal to 6 bar. If, for example, the melt is in a crucible, it can alternatively or additionally, for example, be purposefully coated with a sufficient amount of SiN in order to introduce a sufficient amount of nitrogen into the melt. Furthermore, it is alternatively or additionally possible, SiN or the material, which can also be used for the coating of the crucible, continuously fed directly to the melt or nachzuchargieren, for example by the continuous introduction in powder form. In a further embodiment, both semiconductor materials are applied as a slurry to a film, dried and sintered, in order then to supply them to a targeted melting process.

Finally, the starting material, in particular the melt, is crystallized or recrystallized, it being possible to use, for example, crystallization processes known per se. In the case of the example of structures 5 Si ₃ N ₄ in Si are formed in the course of solidification or crystallization of the melt Si ₃ N ₄ precipitates, especially in the grain boundaries 12 if sufficient nitrogen was added to the melt.

In this case, the introduction of the at least one substance is metered so that at least 50%, preferably at least 80%, particularly preferably at least 90% of all grain boundaries 12 with the structures 5 are decorated. The conductive structures 5 thus permeate the entire body 2 , in particular from an upper side 3 of the basic body 2 , more preferably up to a bottom 4 of the basic body 2 , Correspondingly, charges, in particular minority charge carriers, can originate from the volume of the basic body 2 about the structures 5 be directed, in particular to the top 3 ,

So that the conductive structures 5 the main body 2 The grain structure can be adjusted accordingly during crystallization, for example by using a seed crystal having a suitable grain structure, as seen in at least one direction. In particular, the grain structure can be adjusted so that at least in one direction, the average distance between a grain 11 and his neighbors next door 11 '' less than or equal to 2 mm, preferably less than or equal to 1 mm, more preferably less than or equal to 0.5 mm. A high density of grain boundaries 12 also helps the crystal quality of the body 2 to improve insofar that in corresponding subsequent annealing steps dislocations and metallic impurities to the grain boundaries 12 can walk. Furthermore, the presence of grain boundaries 12 also contribute to the reduction of thermal stresses during the crystallization process.

Particularly preferably, the introduction of the at least one substance is metered so that two immediately adjacent conductive structures 5 in the range of a grain boundary 12 a mean distance less than or equal to 5 • m, preferably less than or equal to 2 • m, more preferably less than or equal to 1 • m. This results in a particularly good conductivity through the conductive structures 5 ensured and an excellent active passivation of grain boundaries 12 achieved, as a result, a recombination of the minority carriers with majority charge carriers at the grain boundaries 12 is prevented. In experiments it could be shown that conductive structures 5 of Si ₃ N ₄ in Si grain boundaries 12 even be able to undress completely.

2 shows the use of an electrically functionalized semiconductor element according to the invention 1 in a solar cell 6 , In the area of the top 3 indicates the basic body 2 an emitter 13 on, which can be prepared in particular by subsequent doping in a conventional manner. For example, the first semiconductor material may be Si, that in the main body 2 is present essentially as p-doped Si. The emitter 13 is then passed through an n-doped region of the main body 2 or of the first semiconductor material. The area of the main body 2 from the first semiconductor material outside the emitter 13 (So in the example mentioned p-doped Si) forms a base 16 the solar cell 6 ,

On the top 3 is an emitter contact 7 arranged the emitter 13 electrically contacted. The conductive structures 5 that the top 3 or at least the emitter 13 electrically contact and far into the volume of the body 2 reaching out to a certain extent form a three-dimensional emitter structure. The minority carriers therefore only need a short diffusion path in the main body 2 Go back to the next grain boundary 12 butt and there over the conductive structures 5 to the emitter 13 can be directed. So that the conductive structures 5 no short circuit between the emitter 13 or the emitter contact 7 and a basic contact 9 the solar cell 6 make sure that the base contact 9 the conductive structures 5 preferably not electrically contacted, but only the base 16 , One way to prevent potential short circuits is to use infrared transmission to illuminate the decorated grain boundaries 12 identified or the location of the decorated grain boundaries is known from the beginning. Subsequently, an insulating passivation layer or an insulating layer 8th on the bottom 4 applied and only on this the basic contact 9 so the base contact 9 initially completely electrically isolated from the body 2 is. This will be the basic contact 9 according to a mask created on the basis of the infrared image selectively with local connection contacts 10 with the main body 2 connected. The local connection contacts 10 can be produced by targeted laser bombardment using the mask as so-called laser fired contacts (LFC). Because there are no conductive structures 5 there are no ohmic contacts. That is through the conductive structures 5 created three-dimensional emitter structure can optimally pick up minority carriers after already small diffusion paths.

In the embodiment of the 3 in turn, an electrical contact between the conductive structures 5 and the basic contact 9 through an insulation layer 8th prevented, which is designed as a heterolayer, which 10 deliberately prevents the flow of minority carriers. This hetero-layer can be evaporated, for example by means of chemical vapor deposition (CVD) as an amorphous silicon layer, which is doped accordingly. The hetero layer must be made thick enough to prevent tunneling through minority carriers. The remainder of the solar cell process is analogous to the processes currently established on the solar market.

In the schematic sectional view of 4 is an embodiment of the solar cell according to the invention 6 with an electrically functionalized semiconductor element according to the invention 1 shown, with the base contacts 9 and the emitter contacts 7 on the same side of the solar cell 6 are arranged. In the illustrated embodiment, this page corresponds to the solar cell 6 the bottom 4 of the semiconductor element 1 , In practical use, this arrangement facilitates emitter contacts 7 and base contacts 9 the electrical connection of the solar cell 6 and prevents shading by a contact on the top 3 ,

This is made possible by the conductive structures 5 that the emitter 13 in the area of the top 3 and another emitter 13 ' in the area of the bottom 4 connect electrically. That is, the electrical structures 5 act as electrical vias between the emitters 13 . 13 ' , In the illustrated embodiment, the base 16 from a p-doped Si, the emitter 13 . 13 ' are negatively doped. In the conductive structures 5 it is preferably Si ₃ N ₄ .

The emitter contacts 7 are made of Ag, for example. To the conductivity below the emitter contacts 7 to increase and with the solar cell 6 To be able to dissipate the current thus generated better is the emitter 13 ' in areas n ++ where the respective emitter contact 7 the bottom 4 contacted, locally more negatively doped than in the remaining emitter 13 ' , The base contacts 9 are made of Al and only contact the base 16 , being the emitter 13 ' penetrate. To contact the emitter 13 ' to avoid are the base contacts 9 in the area of the emitter 13 ' from a local isolation 15 surrounded, which is formed for example by SiO ₂ . That is, there is no electrical contact between the base contacts 9 and the emitter 13 ' ,

Furthermore, the solar cell 6 of the 4 to increase their efficiency an antireflection coating 14 , for example, SiN, on, on the top 3 and on the bottom 4 is appropriate. In addition to an adjustment of the refractive indices causes the antireflection layer 14 an electrical passivation of the top 3 and the bottom 4 ,

In the schematic sectional view of 5 is another embodiment of the solar cell according to the invention 6 shown, which is essentially completely analogous to the embodiment of the 4 is constructed so that in principle referred to the above. In contrast to the embodiment of 4 are the emitter contacts 7 and the base contacts 9 but not on the same side of the solar cell 6 but on opposite sides of the solar cell 6 arranged. This guarantees a uniform and not complete shading of the solar cell 6 on both sides, so the solar cell 6 can be used as a bifacial solar cell.

In 5 contact the emitter contacts 7 the top 3 , Accordingly, the emitter 13 in areas n ++ where the respective emitter contact 7 the top 3 contacted, locally more negatively doped than in the remaining emitter 13 ,

LIST OF REFERENCE NUMBERS

1

 Electrically functionalized semiconductor element

2

 body

3

 Top of the body

4

bottom 5 of the basic body

5

 Leading structure

6

 solar cell

7

 emitter contact

8th

 insulation layer

9

 base contact

10

 Local connection contact

11, 11 ', 11' '

 grain

12

 grain boundary

13, 13 '

 emitter

14

 Anti-reflective coating

15

 Local isolation

16

 Base

p

 p-doped Si

n ++

 Range of increased n-doping

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited non-patent literature

• HJ Moller et al., "Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells", Solid State Phenomena 156-158, 35 (2010) [0006]
• S. Köstner et al .; "Structural Analysis of Longitudinal Si-CN Precipitates in Multicrystalline Silicon", Proc. 8th IEEE PVSC 2, 1 (2012) [0006]

Claims (27)

Method for producing an electrically functionalized semiconductor element ( 1 ) with a grain boundary ( 12 ) having basic body ( 2 ) of a first semiconductor material, in particular Si, which has a first bandgap, the method comprising the following steps: - producing a starting product, in particular a melt, of the first semiconductor material; Introducing at least one substance into the starting product or during its production, wherein a second semiconductor material is selected as the substance or a substance which can form the second semiconductor material with the first semiconductor material, wherein the second semiconductor material has a second band gap which is at least 0.5 eV from the first band gap, and wherein the second semiconductor material for forming a plurality of electrically conductive structures ( 5 ) in the area of grain boundaries ( 12 ) of the basic body ( 2 ), which structures ( 5 ) each have a top side ( 3 ) of the basic body ( 2 ) electrically contact and from the top ( 3 ) towards one of the top ( 3 ) opposite underside ( 4 ) and wherein the introduction is metered in such a way that at least 50%, preferably at least 80%, particularly preferably at least 90% of all grain boundaries ( 12 ) with the structures ( 5 ) are decorated from the second semiconductor material; Crystallizing or recrystallizing the starting product to the main body ( 2 ). A method according to claim 1, characterized in that the second band gap is greater than or equal to 1.7 eV, preferably greater than or equal to 3 eV, more preferably greater than or equal to 3.6 eV, in particular greater than or equal to 5 eV. Method according to one of claims 1 to 2, characterized in that the starting material is a melt. Method according to one of claims 1 to 3, characterized in that the crystallization by means of the ribbon growth-on-substrate method or by means of the vertical gradient freeze method. Method according to one of claims 1 to 4, characterized in that the crystallization takes place with a crystallization rate greater than or equal to 4 mm / h, preferably greater than or equal to 6 mm / h, particularly preferably greater than or equal to 8 mm / h. Process according to one of Claims 1 to 5, characterized in that, upon crystallization or recrystallization of the starting product, ordered heat sinks form to provide a geometric structure of the grain boundaries ( 12 ). Method according to one of Claims 1 to 6, characterized in that the second semiconductor material is a nitride or carbonitride, preferably AlN, GaN, BN, InN, TiN or Si ₃ N ₄ . Method according to one of claims 1 to 6, characterized in that it is the second semiconductor material is a II-VI semiconductor or a III-V semiconductor, wherein it is in particular a binary, preferably a ternary, particularly preferred is a quaternary compound. Method according to one of claims 1 to 6, characterized in that the at least one substance is selected from the group consisting of diamond, graphite, GeC, SiC and BC. A method according to claim 1, characterized in that a slurry mixture is applied to a carrier substrate, with or without clearly defined grain boundaries, dried, sintered and recrystallized. Electrically functionalized semiconductor element ( 1 ) obtainable by a process according to one of claims 1 to 9, in particular according to claim 10. Electrically functionalized semiconductor element ( 1 ) comprising a grain boundary ( 12 ) having basic body ( 2 ) of a first semiconductor material, preferably of Si, wherein the first semiconductor material has a first bandgap, wherein the main body ( 2 ) an upper side ( 3 ) and one of the top ( 3 ) opposite underside ( 4 ), wherein in the region of the grain boundaries ( 12 ) of the basic body ( 2 ) a plurality of electrically conductive structures ( 5 ), which structures ( 5 ) each the top ( 3 ) electrically contact and from the top ( 3 ) towards the bottom ( 4 ), the structures ( 5 ) are formed by a second semiconductor material having a second bandgap, and wherein the second bandgap differs by at least 0.5 eV from the first bandgap. Electrically functionalized semiconductor element ( 1 ) according to any one of claims 11 to 12, characterized in that at least 50%, preferably at least 80%, particularly preferably at least 90% of all grain boundaries ( 12 ) with the structures ( 5 ) are decorated from the second semiconductor material. Electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 13, characterized in that the second band gap is greater than or equal to 1.7 eV, preferably greater than or equal to 3 eV, more preferably greater than or equal to 3.6 eV, in particular greater than or equal to 5 eV. Electrically functionalized semiconductor element ( 1 ) according to any one of claims 11 to 14, characterized in that in the region of at least one of the grain boundaries ( 12 ) of the basic body ( 2 ) the mean distance between two immediately adjacent structures ( 5 ) less than or equal to 5 • m, preferably less than or equal to 2 • m, more preferably less than or equal to 1 • m. Electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 15, characterized in that in the basic body ( 2 ) at least in one direction the mean distance of a grain ( 11 ) to another, whose next neighbor forming grain ( 11 '' ), less than or equal to 2 mm, preferably less than or equal to 1 mm, more preferably less than or equal to 0.5 mm. Electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 16, characterized in that the second semiconductor material is a nitride or carbonitride, preferably AlN, GaN, BN, InN, TiN or Si ₃ N ₄ . Electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 16, characterized in that it is the second semiconductor material is a II-VI semiconductor or a III-V semiconductor, wherein it is in particular a binary, preferably a ternary, particularly preferred is a quaternary compound. Electrically functionalized semiconductor element ( 1 ) according to any one of claims 11 to 16, characterized in that the second semiconductor material is a material selected from the group consisting of diamond, GeC, SiC, ZnO, ZnS, SnC, GaP, InP, GaAs, AlGaAs, AlInAs, GaInP , BP, AlP, AlAs, GaP, CdSe, CdS, ZnO, ZnSe, ZnS, ZnTe, CuCl, SnS ₂ , TiO ₂ , Cu ₂ O, SnO ₂ , BaTiO ₃ , SrTiO ₂ , LiNbO ₃ , GaSe, La ₂ CuO ₄ , NiO, InGaP, AlInAs, GaAsP, AlGaN, AlGaP, InGaN, CdZnTe, HgZnTe, GaInSb, GaInAsP, GaInAs, AlAs, ZnSe, and Cu (In, Ga) Se ₂ . Solar cell ( 6 ) comprising an electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 19, particularly preferably produced by a method according to claim 10, wherein a top side ( 3 ) electrically contacting emitter contact ( 7 ) is provided, which is preferably on the top ( 3 ) is arranged. Solar cell ( 6 ) according to claim 19, characterized in that on the underside ( 4 ) an insulation layer ( 8th ), which is electrically insulating, at least for minority charge carriers in the first semiconductor material, and in that a base contact ( 9 ) is provided, the sections on the insulation layer ( 8th ), the underside ( 4 ) is arranged opposite one another. Solar cell ( 6 ) according to claim 20 and 21, characterized in that it is in the insulating layer ( 8th ) is a hetero-layer which forms a heterojunction with both the first semiconductor material and the second semiconductor material. Solar cell according to ( 6 ) according to one of claims 20 to 22, characterized in that local connection contacts ( 10 ) are provided, the insulating layer ( 8th ) and the underside ( 4 ) of the basic body ( 2 ) electrically contact only at those locations which consist of the first semiconductor material, wherein the local connection contacts ( 10 ) with the basic contact ( 9 ) are electrically connected. Solar cell ( 6 ) comprising an electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 19, in particular produced by the process according to claim 10, wherein in the main body ( 2 ) an emitter ( 13 ) in the area of the upper side ( 3 ) and another emitter ( 13 ' ) in the area of the underside ( 4 ) and between the issuers ( 13 . 13 ' ) base ( 16 ), the emitters ( 13 . 13 ' ) through the conductive structures ( 5 ) are electrically connected to each other. Solar cell ( 6 ) according to claim 24, characterized in that at least one emitter contact ( 7 ) is provided, the top ( 3 ) or the underside ( 4 ) electrically contacted and on one side of the solar cell ( 6 ) in the area of the upper side ( 3 ) or the underside ( 4 ) of the basic body ( 2 ) and that at least one base contact ( 9 ), which is only the basis ( 16 ) and electrically contacted on the same side of the solar cell ( 6 ) like the at least one emitter contact ( 7 ) or on an opposite side of the solar cell ( 6 ). Detector comprising an electrically functionalized semiconductor element ( 1 ) according to one of claims 11 to 19, in particular produced by a method according to claim 10, wherein a top side ( 3 ) electrically contacting emitter contact ( 7 ) is provided, which is preferably on the top ( 3 ) is arranged. Detector according to Claim 26, characterized in that the contacts on the emitter are made up of small square unconnected contacts (pixels) of one side length which can be adjusted according to the field of application, preferably less than 2 mm, more preferably less than 0.5 mm, in particular less than 200 micrometers.

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