WO2013060087A1 - Polyhedral oligomeric silsesquioxane compound containing mercapto polyfunctional group, its composition, and soft template for imprinting - Google Patents

Polyhedral oligomeric silsesquioxane compound containing mercapto polyfunctional group, its composition, and soft template for imprinting Download PDF

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WO2013060087A1
WO2013060087A1 PCT/CN2012/000319 CN2012000319W WO2013060087A1 WO 2013060087 A1 WO2013060087 A1 WO 2013060087A1 CN 2012000319 W CN2012000319 W CN 2012000319W WO 2013060087 A1 WO2013060087 A1 WO 2013060087A1
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group
composition
template
photoresist
compound
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PCT/CN2012/000319
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French (fr)
Chinese (zh)
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林宏
姜学松
印杰
锻治诚
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上海交通大学
日立化成工业株式会社
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Priority to JP2014534914A priority Critical patent/JP2015501296A/en
Publication of WO2013060087A1 publication Critical patent/WO2013060087A1/en

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/21Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/0275Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Definitions

  • the present invention relates to the field of micro/nano processing in microelectronics and nanoelectronics, and relates to a polyfunctional polysiloxane-containing polysiloxane compound (referred to as "low poly polysiloxane compound” simply as “Polyhedral” Ol igomeric Si lsesquioxane, abbreviated as POSS”) and its composition for preparing embossed soft stencils and embossed soft stencils.
  • BACKGROUND Nanoimprint lithography is considered to be one of the most promising next-generation lithography technologies.
  • nanoimprint technology can achieve graphics resolution beyond the limitations of light diffraction or particle beam scattering in other traditional technologies, with low cost, high resolution, high productivity and so on.
  • the template is the biggest difference between nanoimprint lithography (NIL) and traditional optical lithography.
  • NIL nanoimprint lithography
  • the template as the initial carrier of the embossed feature directly determines the quality of the embossed pattern, and achieves high quality.
  • high quality stamping stencils are required.
  • nanoimprint lithography uses the 1 X template, which faces greater challenges in stencil making, inspection and repair techniques.
  • the fabrication of templates has become the biggest technical bottleneck of NIL, and with the deepening of nanoimprint lithography research and the expanding application fields, the manufacture of NIL templates will become more and more important and face more severe challenges. . Therefore, the fabrication of templates has become one of the most important research hotspots in nanoimprint lithography, especially the fabrication of 3D templates, large-area templates and high-resolution templates, and the inspection and repair of template defects are the most urgent in the future and in the future. Demand, the most important research hotspots and challenges.
  • the traditional embossed carrier template is made of quartz, which is not only expensive, but also extremely fragile. After repeated work, the etchant is easily adhered to the surface of the stencil.
  • Soft stencils refer to substrates made of soft materials. They are usually made of photoresist as a prepolymer. They are patterned on the surface by imprinting, and then cured by heat or UV. Photocuring to obtain a polymer soft template with a reverse replication pattern.
  • the soft template Compared with the hard template, the soft template not only has a simple preparation process, but also greatly saves cost; at the same time, due to its soft matrix, it can replace the disadvantage that the hard material cannot be bent, and the quality of the imprint is greatly improved.
  • a search of the prior art found that the most successful commercialization of the currently used imprinted photoresist product for soft stencil fabrication is polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • the polymerization mechanism is changed in essence, and the photopolymerization reaction is changed from free-radical chain self-polymerization to radical gradualization.
  • Copolymerization so that the molecular weight of the polymer is gradually increased, the gelation phenomenon is delayed, the oxygen inhibition effect is effectively reduced, the conversion rate of the double bond is greatly improved, and the volume shrinkage of the polymer is reduced.
  • the amount of photoinitiator required for photopolymerization of mercapto/olefin monomers is very small, or even unnecessary, so it is possible to use light curing to prepare thicker parts.
  • inorganic fillers are usually added.
  • inorganic particles themselves with the polymer precursor due to the incompatibility of the inorganic particles themselves with the polymer precursor, excessive doping causes the system to be phase-separated, greatly affecting the properties of the material.
  • POSS Polyhedral Oligomeric Silsesquioxane
  • the basic composition is composed of a Si-0 bond, and the side chain is a variety of organic groups bonded to a silicon atom. Therefore, the structure of the silicone material contains both an organic group and an inorganic skeleton.
  • P0SS monomer Since the P0SS monomer is soluble in the process of mixing, it can be considered as a polymer which is formed in the true sense of molecular level dispersion, which has many characteristics that cannot be achieved by nanomaterial additives: P0SS skeleton is dispersed in the nanometer scale in the polymerization.
  • the substrate has the advantages of low density, good monodispersity, no moisture absorption, and high thermal stability; its excellent compatibility overcomes the problem of weak phase interface of the composite during blending.
  • Organic polymer polymerization can produce organic/inorganic nanocomposites. Due to the presence of inorganic nanophases, the material has a great leap in performance, and has become an important means of preparing high-performance and functional materials. It is the most dynamic and dynamic field in materials science.
  • US Patent No. 007691275B2 describes and discloses a P0SS compound containing an active hydrogen functional group, and combines the P0SS compound and a monomer of a double bond functional group to form an imprinted photoresist composition, further passing ultraviolet nanoimprinting. Form nanopatterns.
  • Patent US20110062619A1 describes and discloses a process for preparing a methoxysilane-containing P0SS compound, and this P0SS compound is used in nanoimprinting by thermal polymerization.
  • Patent US20080166871A1 describes and discloses a P0SS containing an acrylate or epoxy functional group, and forms the P0SS compound with other diluents and photoinitiators to form an imprinted photoresist composition, and further forms a nanometer by ultraviolet nanoimprinting. Graphics. It is apparent that in the prior art, the P0SS compound is an essential component of the embossing composition, and the mechanical properties, thermal properties, etching resistance and the like of the polymer film can be remarkably improved.
  • the present invention is directed to the above-mentioned deficiencies of the prior art by using a fluorenyl-containing low polypolysiloxane compound.
  • the thiol end group grafts a low surface energy organic functional group, combining the advantages of thiol click chemistry and P0SS fluoride to develop a novel compound for the preparation of embossed soft stencils and violet photoresist.
  • the soft template prepared by the photoresist composition has low surface tension, high mold release efficiency, high mechanical strength, and the present invention further applies the soft template to commercial ultraviolet photoresist imprinting, and obtains good mold release. Effects and a wide range of high-definition graphics structures.
  • the photoresist provided by the invention can be used not only as a soft template in the imprint technique, but also as a sacrificial layer in the imprint technique due to the high resistance to oxygen etching.
  • the invention is achieved by the following technical solutions:
  • the present invention provides a fluorenyl-containing polyfunctional fluorene-containing polysiloxane compound represented by the formula (1), m ⁇ (SiO ⁇ CH ⁇ HsCHsSRa ) n (1) wherein R - CH 2 -CH 2 - C3 ⁇ 4 -SH, m represents an integer of from 3 to 12; R 2 is an unsubstituted or substituted fluorenyl group, an unsubstituted or substituted ester group, and an unsubstituted or substituted aryl group, respectively.
  • the substituent is a halogen atom or a silicon atom, and n represents an integer of 1 to 12.
  • the present invention also provides a method according to the above, wherein R 2 is an unsubstituted or substituted Ci—Cw alkyl group, an unsubstituted or substituted C 3 -C 15 ester group or none. C 6 - C 2 substituted or substituted with a substituent.
  • the aromatic group, the substituent is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or a silicon atom.
  • the present invention also provides a technical solution based on the above technical solution, wherein the C 3 - C 15 ester group is a C 3 - C 15 ester group substituted by fluorine.
  • the present invention also provides a solution based on the above, wherein the fluorine-substituted C 3 - C 15 ester group is propionic acid 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8-trifluorooctyl ester or 2-methyl-propionic acid
  • the present invention also provides a technical solution based on the above technical solution, wherein the C 6 -C 2Q aryl group is a phenethyl group.
  • the present invention also provides a Ci- based on the above technical solution.
  • the thiol group is replaced by fluorine.
  • the present invention also provides a method according to the above, wherein the fluorine is substituted.
  • the fluorenyl group is a technical solution of 1, 1, 1 , 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-heptadefluoro-fluorenyl.
  • the present invention provides a composition for preparing a soft template in an imprinting process, comprising the compound shown above.
  • the present invention also provides a composition based on the soft template described above, further comprising a composition of a compound of the formula (2), a crosslinking agent and a soft template of a photoinitiator,
  • CHR CR ⁇ (2) Ri, R 2 and R 3 in the formula (2) are each a hydrogen atom, a d-alkyl group, and d-C 2 . Alkoxy, C 6 - C 2 . Aromatic groups, C, - C 2 . ⁇ ⁇ , C 3 -C 2 . Cyclodecyl, C 3 -C 2 .
  • the imide group, the formula (2) may be substituted by a halogen atom or a silicon atom.
  • the present invention also provides a composition based on the soft template described above, wherein the compound of the formula (2) is selected from the group consisting of C 3 -C 15 olefins, C 3 - C 15 vinyl ethers, C 3 - C 15 vinyl groups Amide, C 3 -C 2 . (Meth)acrylate, a composition in which the substituent is a fluorine atom or a soft template of a silicon atom.
  • the present invention also provides a composition based on the soft template, the C 3 - C 15 olefins selected from 1-butene, 1-hexene, 1-heptene, perfluoro-hexene, heptene, or perfluoro a fluorofluoroheptene;
  • the C 3 -C 15 vinyl ether is selected from the group consisting of vinyl ethyl ether, vinyl butyl ether, vinyl hexane glycol ether, 2, 2, 2-trifluoroethyl vinyl ether or 2-perfluoro Propoxy perfluoropropyl trifluorovinyl ether; said C 3 - C 2 .
  • (Meth)acrylate is selected from crotonate, benzyl methacrylate, phenoxyethylene glycol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H a composition of perfluorodecyl acrylate or a soft template of 1H, 1H, 7H-dodecafluoroheptyl methacrylate.
  • the present invention also provides a composition based on the soft template described above, wherein the compound of the formula (2) is benzyl methacrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, A composition of a soft template of 2H, 2H-perfluorononanol acrylate.
  • the present invention also provides a composition based on the soft template described above, wherein the crosslinking agent is selected from the group consisting of 1, 4-butadiene, 2,5-dimethyl-1,5-hexadien-3-ol, Perfluorohexadiene, 1,3-diethylene-1,1,3,3-tetramethyldisiloxane, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, dipropylene glycol Diacrylate, 1,6-bis(acryloyloxy)-2, 2, 3, 3, 4, 4, 5, 5-octafluorohexane, 1,5-bis(acryloyloxy)-2 , 2, 3, 3, 4, 4- A composition of a soft template of hexafluoropentane, trimethylolpropane trimethacrylate, trimethylolpropane triacrylate.
  • the crosslinking agent is selected from the group consisting of 1, 4-butadiene, 2,5-dimethyl-1,5
  • the present invention also provides a composition based on the soft template described above, wherein the compound of the formula (1) is 5 to 65 mass%, the compound of the formula (2) is 10 to 60 mass%, and the crosslinking agent is 5
  • the composition of the soft template is 5% by mass, and the photoinitiator is 0.3 to 3 mass%, and the sum of the masses of the components is 100%.
  • the present invention provides an embossed soft template formed from the above-described ultraviolet photoresist composition.
  • the invention provides a method for preparing an embossed soft template, which comprises the following steps:
  • embossed UV photoresist (2) of the composition of any one of claims 8 to 14 is spin-coated on the surface of the modified quartz plate (3) under the following conditions: at 300 rpm After rotating the film for 10 seconds,
  • the film was rotated at 3000 rpm for 20 seconds to obtain a film thickness of 750 ⁇ 5 nm ;
  • the quartz plate (3) with the UV photoresist (2) is brought into contact with the quartz template (1), placed in an imprinting machine, evacuated for 3 minutes, and 100 N is applied to the quartz template (1).
  • the present invention provides a process for imprinting a photoresist and an embossed pattern obtained by using the above-described soft mold.
  • composition system using the compound of the formula (1) and the compound of the formula (2) is transparent, uniform, stable, and has good storage properties, and is also desirable because it has a low viscosity and is convenient for spin coating. Applied to the imprint process operation, the damage to the quartz template is reduced.
  • the composition can also be applied to the preparation of embossed soft stencils, and the embossed soft stencil produced has a large static water contact angle, so that it has superior hydrophobic properties.
  • the soft template can be used to imprint the defect-free surface. No peeling, structurally complete graphics, the soft template has excellent technical effects.
  • the embossed soft template prepared by the composition has high mechanical strength, is convenient for repeated embossing and does not need to be modified again, and improves the use of the soft template. Compared with the soft stencil made by the existing photoresist, the remarkable technical effects are mainly reflected in:
  • the photoresist has a low viscosity, which is convenient for spin coating and imprint process operations.
  • the soft template has high mechanical strength and wear resistance, which improves the use rate of the template.
  • the low surface energy of the soft template helps to improve the demolding efficiency, and the surface of the template does not need further modification.
  • the obtained embossed pattern has no defects, no peeling on the surface and complete structure.
  • Figure 1 is a structural diagram of the compounds synthesized in the columns 1-5 and corresponding nuclear magnetic hydrogen diagrams: Figure 1 (a): P0SS-SH;
  • Figure 2 is a process flow for soft stencil fabrication and imprinting of a conventional commercial photoresist.
  • Figures 3(a), (c) and (e) show the different structural patterns of the quartz template 1 respectively: (&) 3.00 ⁇ lattice, (c) 350nm lattice, (e) 700nm grating;
  • 3(b), (d) and (f) respectively utilize the quartz template 1 having Figs. 3(a), (c) and (e) and the ultraviolet photoresist JTHC-B- in the following examples.
  • 1 Corresponding figures of the soft template prepared by the composition: (b) 3 ⁇ 00 ⁇ dot matrix, (d) 350 nm dot matrix, (f) 700 nm grating.
  • Figure 4 is an SEM image, respectively: Figure 4 (a) 200 nm lattice quartz template 1; Figures 4 (b), 4 (c) are the JTHC-B-2 ultraviolet photoresist composition of the following examples, The pattern of the soft template 4 prepared by the commercial glue Sylgardl 84 composition through the template 1 (Fig. 4 (a)); Fig. 4 (d) and Fig. 4 (e) are the two types of soft templates prepared in the above-mentioned, respectively.
  • Figure 5 is a soft template 4 embossed commercial glue Watershed 11120 of different structures and sizes prepared by using the UV photoresist JTHC-B-2 composition of the following examples, which is obtained by patterning after curing.
  • Figure 6 is a (a) pattern of a soft template prepared by using the ultraviolet photoresist JTHC-B-2 composition of the following examples, and (b) and (c) are respectively the ultraviolet rays of the following examples.
  • the present invention provides a fluorenyl-containing polyfunctional group-containing low-poly polysiloxane compound represented by the formula (1), (SiO ⁇ R m ⁇ (SiO L 5 CH 2 CH 2 CH 2 SR 2 ) n (1) wherein is - CH 2 - C -CH 2 - SH, m represents an integer of 3 ⁇ 12; R 2 are unsubstituted or substituted alkyl with the substituent group, substituted or unsubstituted ester group, and a substituted or unsubstituted An aromatic group substituted with a substituent, wherein the substituent is a halogen atom or a silicon atom, and ⁇ represents an integer of 1 to 12.
  • the above are respectively an unsubstituted or substituted d-fluorenyl group, an unsubstituted or substituted group. a substituted C 3 -C 15 ester group or a C 6 -C 2 aryl group which is unsubstituted or substituted with a substituent, and the substituent is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or a silicon atom.
  • C 3 - C 15 ester group is preferably a fluorine-substituted C 3 - C 15 ester group, the fluorine-substituted C 3 -C 15 acid ester is a 3, 3, 4, 4, 5, 5 , 6, 6, 7, 7, 8, 8, 8 -tridecafluorooctyl or 2-methyl-propionic acid
  • the present invention relates to a process for preparing a fluorenyl-containing polyfunctional low polypolysiloxane compound represented by the general formula (1), which method comprises the following steps in sequence:
  • Step (1) can be prepared according to the following recognized technique [1 ' 2] :
  • a silicon germanium monomer or a mixture thereof, concentrated hydrochloric acid is sequentially added to a one-necked flask equipped with a magnetic stirrer, and then dissolved in a certain amount of methanol solvent, and after refluxing for a while, the mixture is allowed to stand, and then filtered.
  • the supernatant liquid is obtained as a milky white product, and the milky white product is dissolved in dichloromethane, and then added.
  • the methanol solvent was allowed to settle, and after repeated three times, the solvent was evaporated by rotary evaporation, and the solvent was evaporated to obtain a purified fluorenyl-containing low-poly polysiloxane compound (P0SS-SH for short).
  • the silane monomer or a mixture thereof used in the foregoing step is (3-mercaptopropyl)trimethoxysilane (TPS), (3-mercaptopropyl)trimethoxysilane (TPS) and n-octyltriethoxy a mixture of silicon germanium (0TES)., a mixture of (3-mercaptopropyl)trimethoxysilane (TPS) and phenyltrimethoxysilane (PTMS), (3-mercaptopropyl)trimethoxysilane (TPS) A mixture with 1, 1, 1, 2, 2, 3, 3, 4, 4, 5, 6, 7-dodecafluorodecyltrimethoxysilane (FPTES).
  • the heating and refluxing means refluxing at 50-100 ° C for 24-40 hours.
  • the concentrated hydrochloric acid has a mass concentration range of 35-37%.
  • Step (2) sequentially adding the thiol-containing low-polysiloxane compound (POSS-SH) prepared above with a double bond-containing monomer and a photoinitiator to a closed reagent bottle with a magnetic stirrer Then, a small amount of dichloromethane solvent is added to dissolve, and the reaction is stirred under ultraviolet light at room temperature. After the reaction is completed, the clear solution obtained by the reaction is sedimented with n-hexane, and after standing for a while, the supernatant liquid is filtered off to obtain a liquid viscosity. Thick sediment. The liquid viscous sediment is dissolved with a small amount of methylene chloride, and the excess hexane is added to carry out product sedimentation. After repeated three times, the finally obtained liquid viscous sediment is subjected to rotary evaporation, and the solvent is evaporated to obtain a general formula (1). a purified product of the compound.
  • PPS-SH thiol-containing low-poly
  • the solvent used in this step may also be one or a mixture of dichloromethane, chloroform, tetrahydrofuran, and toluene. Preferred is dichloromethane, chloroform.
  • the double bond-containing monomer is selected from a C 3 -c 15 olefin which is unsubstituted or substituted by a substituent, a C 3 -c 15 vinyl ether which is unsubstituted or substituted by a substituent, is unsubstituted or substituted by a substituent.
  • c 3 -c 2 (Methyl) acrylate compound.
  • the substituent is a fluorine, chlorine, bromine, iodine atom or a silicon atom, preferably a fluorine atom.
  • the unsubstituted or substituted C 3 -C 15 olefin preferably 1H, 1H, 2H-perfluoro-1-decene, 1H, 1H, 2H-perfluoro-1-hexene, styrene , p-methylstyrene or 2, 3, 4, 5, 6-pentafluorostyrene.
  • the unsubstituted or substituted C 3 -C 15 vinyl ether preferably 2, 2, 2-trifluoroethyl vinyl ether, 2-perfluoropropoxy perfluoropropyl trifluorovinyl ether .
  • the double bond-containing monomer is preferably styrene, 1H, 1H, 2H-perfluoro-1-nonene, 1H, 1H, 2H, 2H-perfluorooctyl acrylate or 1H, 1H, 7H-ten Difluoroheptyl methacrylate.
  • the photoinitiator is selected from a hydrogen abstraction type or a cleavage type free radical photoinitiator: 1-hydroxycyclohexyl phenyl ketone, benzophenone, isopropyl thioxanthone (abbreviation: ITX), 2, 4 , one or a combination of 6-trimethylbenzophenone, a-hydroxydecyl benzophenone, benzyl diformaldehyde acetophenone or ⁇ -aminoalkyl benzophenone (abbreviation . 1-907) It is preferably a combination of ⁇ -aminomercaptophenone and isopropyl thioxanthone.
  • the mass concentration range of the photoinitiator is: 0. 3-3 %;
  • the time range of the ultraviolet light is: 4-24 hours;
  • the ultraviolet band 300-400 nm ;
  • a second invention of the present invention provides an ultraviolet resist composition comprising the compound of the above formula (1) and the compound of the formula (2),
  • a hydrogen atom d-C 2Q fluorenyl group, and dC 2 , respectively .
  • Alkoxy C 6 - C 2 .
  • Aromatic group d-C 2 .
  • Ester group C 3 -C 2 .
  • a cyclodecyl group a C 3 -C 2Q imide group
  • the formula (2) may be substituted by a halogen atom or a silicon atom.
  • the compound of the formula (2) is selected from the group consisting of C 3 -C 15 olefins, C 3 -C 15 vinyl ethers, C 3 -C 15 vinyl amides, C 3 -C 2 .
  • the 3- ( 15 olefin) is selected from 1-butene, 1-hexene, 1-heptene, perfluorohexene, perfluoroheptene or PFH;
  • the C 3 - C 15 vinyl ether is selected From vinyl ethyl ether, vinyl butyl ether, vinyl hexane glycol ether, 2, 2, 2-trifluoroethyl vinyl ether or 2-perfluoropropoxy perfluoropropyl trifluorovinyl ether;
  • 3 - C 2 (meth) acrylate selected from crotonate, benzyl methacrylate, phenoxyethylene glycol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H-perfluorononanol acrylate or 1H, 1H, 7H-d
  • the compound of the formula (2) in the ultraviolet photoresist composition is Benzyl methacrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H-perfluorononanol acrylate.
  • the ultraviolet photoresist composition further contains a crosslinking agent and a photoinitiator.
  • the crosslinking agent in the ultraviolet photoresist composition is selected from a double bond having a functional group of not less than two
  • the methacrylate compound may have a plurality of hetero atom substituents such as a halogen atom or a silicon atom, if necessary. A fluorine atom or a silicon atom is preferred.
  • the crosslinking agent in the ultraviolet photoresist composition is selected from the group consisting of 1, 4-butadiene, 2,5-dimethyl-1, 5-hexadien-3-ol, and perfluorohexane Alkene, 1,3-diethylene-1,1,3,3-tetramethyldisiloxane, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, dipropylene glycol diacrylate, 1,6-bis(acryloyloxy)-2,2,3,3,4,4,5,5-octafluorohexanyl, 1,5-bis(acryloyloxy)-2, 2, 3 , 3, 4, 4-hexafluoropentafluorene, trishydroxymethylpropionate trimethacrylate, trimethylolpropane triacrylate (TMPTA).
  • TMPTA trimethylolpropane triacrylate
  • Preferred is 1, 3-diethylene-1,1,3,3-tetramethyldisiloxane, trimethylolpropane triacrylate or 1,6-bis(acryloyloxy)-2. 2, 3, 3, 4, 4, 5, 5-octafluorohexane.
  • the photoinitiator is a hydrogen abstraction type or a cleavage type free radical photoinitiator selected from the group consisting of 1-hydroxycyclohexyl phenyl ketone, benzophenone, isopropyl thioxanthone (ITX), 2, 4, 6 Or one or a combination of trimethyl benzophenone, ⁇ -hydroxyalkylphenone, benzyl diformaldehyde acetophenone or ct-amine decyl ketone (1-907), preferably ⁇ - Amino benzophenone (1-907).
  • each component in the ultraviolet photoresist composition is: in terms of mass%, the compound of the formula (1) is 5 to 65% by mass, and the compound of the formula (2) is 10
  • the sum of the mass of each component is 100.
  • the mass of the photoinitiator is 0.3 to 3 mass%, and the sum of the masses of the components is 100.
  • each component in the ultraviolet photoresist composition is: in terms of mass%, the compound of the formula (1) is 19 to 50% by mass, and the formula (2) The compound is 10 to 50% by mass, the crosslinking agent is 10 to 60% by mass, the photoinitiator is 0.3 to 1% by mass, and the sum of the masses of the components is 100.
  • the above ultraviolet photoresist composition is prepared by sequentially adding a compound of the formula (1), a compound of the formula (2), a crosslinking agent, a photoinitiator and a desired auxiliary agent to a magnetic stirrer. In a sealed reagent bottle, stir and mix well, dilute with anhydrous chloroform, and then use a filter to micro-filter to prepare an ultraviolet photoresist composition, and store it in the dark at low temperature for use.
  • the diluted mass concentration of the composition with anhydrous chloroform is: 5-20%;
  • the ultraviolet photoresist composition is clarified and transparent at a normal temperature of 15 to 30 ⁇ when solvent-free dilution. Liquid.
  • the invention also relates to a soft template and a method of manufacturing the same, which is illustrated in Figures 2(A)-(C):
  • the imprinted UV photoresist 2 of the present invention is spin-coated on the surface of the modified quartz plate 3.
  • the spin coating means that the film was rotated at 300 rpm for 10 seconds, and then the film was rotated at 3000 rpm for 20 seconds to obtain a film thickness of 750 ⁇ 5 nm.
  • the cured quartz plate 3 with the nanopattern of the quartz template 1 is separated from the quartz template 1 (i.e., demolded) to obtain a soft template 4 having a pattern after curing. Then, the quartz piece 3 with the soft template 4 was further aged at 10 CTC for 3 hours, and used as an imprinted soft template (a combination of the soft template 4 and the quartz plate 3) after aging.
  • the invention also relates to a process for soft stencil imprinting photoresist, as shown in Figures 2(D)-(F):
  • the viscosity of the UV photoresist composition is calculated by a trace Oswald viscometer at 25 ° C, by the flow time of the liquid sample and water, the sample density and the viscosity of the water.
  • the specific calculation formula is as follows: Pi U
  • P i and P For UV photoresist density and water density, t. The time required for the sample and water to flow through the same volume, respectively, if the viscosity of the reference liquid 0 is known to be at a certain temperature:! . And P Q , and measured P i, to, ti can determine the viscosity of the sample at this temperature. '
  • the Young's modulus and hardness of the polymer film formed after curing were measured by an in situ nanomechanical test system (Hysitron TI-900 Tribolndenter; USA) at room temperature, taking the lowest value.
  • the static water contact angle of the polymer film formed after curing is through the surface angle contactor
  • the surface energy of the polymer film formed after curing can be measured by the method described in the following Document 3, that is, by using a surface angular contact meter (SL200B; USA), three different solvents are selected, and the contact angle is measured, and the pass angle is measured.
  • the Young's equation calculates the surface energy of the material [4] .
  • Example 2 In a sealed reagent bottle with a magnetic stirrer, the POSS-SH, really ethylene obtained in Example 1 was sequentially added to the methylene chloride in the reagent bottle, wherein the molar ratio of POSS-SH to styrene was For 1:4, the initiator 1-907 and ITX account for 5% of the total mass of the system.
  • the reaction was stirred under a UV light of 365 nm for 12 hours, and the precipitate was added to n-hexane. The supernatant was filtered off. After repeated three times, the solvent was evaporated to dryness to give the product POSS-SS-SH (see Figure 1 (d)). .
  • the P0SS-SH obtained in Example 1 was 1H,1H,2H-perfluoro-1-pyrene (PFDE 8 for short), added to the dichloromethane in the reagent bottle, wherein the molar ratio of P0SS-SH to PFDE 8 is 1:4, initiator 1-907 And IT accounted for 5% of the total system quality, and the light was reacted for 6 hours under a 365 nm UV lamp. After adding hexamidine, the supernatant was filtered off. After repeated three times, the solvent was evaporated to dryness to obtain the product P0SS-SPFDE 8 - SH. (See Figure 1 (e)).
  • Photoinitiator, P0SS-SCFA 6 - SH 0. 5g, benzyl methacrylate (BMA) monomer 0. 3g, crosslinker trimethylolpropane trimethacrylate (TMPT) 0. 2g, photoinitiator 1-907 0. 010g, added to the reagent bottle one by one, stir and mix well.
  • BMA benzyl methacrylate
  • TMPT crosslinker trimethylolpropane trimethacrylate
  • photoinitiator 1-907 0. 010g added to the reagent bottle one by one, stir and mix well.
  • the obtained mixture was subjected to microfiltration using a 0.25 ⁇ m filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
  • the obtained mixture was subjected to microfiltration using a 0.25 ⁇ m filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
  • Photoinitiator 1 The POSS-SH 0. 3g, benzyl methacrylate 0. 5g, crosslinker trimethylolpropane trimethacrylate (TMPT) 0. 2g, photoinitiator 1 -907 0. 010g , added to the reagent bottle one by one, stir and mix well.
  • the mixed UV photoresist composition was weighed and dried with anhydrous chloroform to a mass concentration of 5%.
  • the photoresist of the present invention was microfiltered using a 0.25 micron filter, and stored in the dark and frozen to form an ultraviolet photoresist composition JTHC-A-1.
  • Comparative Example 1 differs from the embodiment of the present invention in that it does not contain any fluorine-containing component in the composition of this comparative example.
  • Example 2 The P0SS-SH 0. 3g, 1H, 1H, 2H, 2H-perfluorooctyl acrylate (CFA 6 ) obtained in Example 1 was weighed separately. 0.4 g, 1,6-bis(acryloyloxy) )- 2,2,3,3,4, 4,5, 5-octafluorohexanide 0. 30g, photoinitiator 1-907 0. 003g, one by one, added to the reagent bottle, stirred and mixed uniformly to form JTHC- A-2.
  • the system after mixing is turbid and opaque, and phase separation occurs.
  • Comparative Example 2 differs from the embodiment provided by the present invention in that no grafted fluorine-containing groups are used. Comparative Example 3 Composition JTHC-A-3
  • TMPT tetramethyl (meth) propyl methacrylate
  • Comparative Example 3 differs from the embodiment 8 provided by the present invention in that POSS-SCFA 6 -SH was replaced with tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP).
  • PTMP tetrakis(3-mercaptopropionic acid) pentaerythritol ester
  • Dow Corning SYLGARD 184 Silicone Rubber is a two component kit consisting of liquid components, including essential components and curing agents.
  • the base component and the curing agent are thoroughly mixed in a weight ratio of 10:1. Regardless of the thickness, the mixture will cure into a flexible, transparent elastomer for electronic/electrical packaging and potting applications.
  • the composition is often used as a thermosetting silica gel for preparing a soft template, and is currently the most commonly used composition for soft template production.
  • PTMP pentaerythritol ester
  • DMPA 2,2-dimethoxy-phenylethanone
  • PTMP tetrakis(3-mercaptopropionic acid) pentaerythritol ester
  • the initiator 2,2-dimethoxy-phenylethanone forms an SB5 ultraviolet photoresist.
  • PTMP tetrakis(3-mercaptopropionic acid) pentaerythritol ester
  • the initiator 2,2-dimethoxy-phenylethanone forms an SB6 ultraviolet photoresist.
  • the main components include: tetrakis(3-propionylpropionic acid) pentaerythritol ester ( ⁇ ), 2,2-di-acryloyloxymethyl-butyl acrylate
  • the photoinitiator 2,2-dimethoxy-phenylethanone forms a ⁇ 2 ultraviolet photoresist.
  • a soft template was prepared by the following method, and used as an imprinted soft template for the imprint process. as shown in picture 2:
  • the substrate quartz plate 3 and the silicon wafer 6 are modified: the quartz plate 3 and the silicon wafer 6 to be modified are placed in a volume of 98% H 2 S0 4 : 30% H 2 0 2 It is treated at a temperature of 150 ° C for 3-7 hours in a mixed solution of 3:1. Acetone and alcohol were washed several times, dried, and then vacuum dried at 120 Torr for 8-12 hours. The dried substrate quartz plate 3 and the silicon wafer 6 were immersed in a mass fraction of 0.2% 3-(trimethoxysilyl) propyl-2-methyl-2-acrylate (MAPTES). In a water toluene solution, seal and store for 4-6 hours. The substrate quartz plate 3 and the silicon wafer 6 were washed with acetone, and nitrogen was blown dry for use, thereby completing the process of modifying the substrate quartz plate 3 and the silicon wafer 6.
  • MAPTES 3-(trimethoxysilyl) propyl-2-methyl-2-acrylate
  • ⁇ Coating on the modified substrate quartz plate 3 by a spin coating process Using the ultraviolet photoresist JTHC-B-1 provided in Example 6 as the imprinting photoresist 2, the coating film is rotated under the following conditions: 300 rpm, time 10 seconds; high speed 3000 rpm, time 20 seconds, film thickness 750 ⁇ 5 nm.
  • the quartz plate 3 with the ultraviolet photoresist 2 is connected to the quartz template 1. Touch and put them together in the press. Vacuum was applied for 3 minutes, and a pressure of 100 N was applied to the quartz template 1 and exposed to an ultraviolet lamp of 365 nm for 3 minutes.
  • the cured quartz plate 3 with the quartz template 1 and the nano-patterned quartz plate 3 are detached from the detached quartz template 1 (ie, demolded), and a soft template with a pattern after curing can be obtained. 4. Then, the quartz piece 3 with the soft template 4 was further aged at 100 Torr for 3 hours, and used as an embossing template after aging.
  • the existing commercial photoresist 5 is spin-coated on the modified silicon substrate 6.
  • the spin coating refers to: rotating the film at 300 rpm for 10 seconds, and then The coating film was rotated at 5000 rpm for 20 seconds to obtain a film thickness of 500 ⁇ 5 nm.
  • the quartz plate 3 with the soft template 4 pattern obtained as described above is oriented to the commercial photoresist 5 with the soft template 4 as shown in FIG. 2(D).
  • the soft template 4 is overlaid on the commercial photoresist 5, and placed in the stamping machine together with the silicon substrate 6.
  • the nanopattern of the soft template 4 was reproduced on a commercial photoresist 5, vacuum was applied for 3 minutes, a pressure of 100 N was applied to the template, and exposure was performed by exposure to a 365 nm ultraviolet lamp for 3 minutes.
  • Example 12 The rest of the steps were the same as in Example 12 except that the ultraviolet photoresist JTHC-B-5 of Example 10 was used.
  • Example 12 The rest of the steps were the same as in Example 12 except that the photoresist composition JTHC-A-1 formed in Comparative Example 1 was used, and the soft template (C-1) of Comparative Example 1 was formed. :
  • Example 12 The rest of the procedure was the same as in Example 12 except that the ultraviolet resist composition SB5 of Comparative Example 6 was used, and the soft template (C-5) of Comparative Example 6 was formed.
  • Example 12 The remaining steps were the same as in Example 12 except that the UV resist composition SB6 of Comparative Example 7 was used, and a soft template (C-6) of Comparative 7 was formed.
  • Example 8 1-907 Low surface energy, suitable for off
  • a successful UV photoresist composition must first ensure uniformity of the system, no phase separation before and after curing, good stability, and good storage performance.
  • the composition of POSS-SH and the fluorine-containing acrylic monomer or fluorine-containing olefin is immiscible throughout the system, and significant phase separation occurs. It is obviously not suitable for the nanoimprinting system, and the fluorinated P0SS-SH of the present invention has good compatibility with the fluorine-containing monomer and the crosslinking agent, and all the implementation systems are transparent and uniform, and have good stability. Has good storage performance.
  • the UV photoresist provided by the invention has no phase separation behavior after curing, indicating that the cured polymer film has stable mechanical properties and uniform mechanical properties.
  • the ultraviolet photoresist composition of the present invention has a lower viscosity than the commercial rubber Sylgard 184, so that the pressure required for the corresponding imprinting is relatively small, which is advantageous for low-cost printing and low pressure. It is beneficial to reduce the damage to the quartz template.
  • the mechanical strength of the polymer film formed by curing the ultraviolet photoresist of the present invention Compared with the commercial photoresist Sylgard 184 and the UV photoresist compositions of Comparative Examples 5-8 (SB4-SB6 and T2), the Young's modulus and hardness are greatly improved due to the introduction of the rigid structure of P0SS, indicating the present invention.
  • the provided UV photoresist composition can have strong mechanical properties if used as a soft stencil material.
  • Figure 4 is an SEM image, respectively: Figure 4 (a) 200nm lattice quartz template 1; Figures 4 (b), 4 (c) are the JTHC-B-2 UV photoresist composition in the examples, respectively, commercial The pattern of the soft template 4 prepared by the template S1 (d) and Fig. 4 (e) are the two soft templates prepared by the above-mentioned composition of the gel Sylgard 184 composition (Fig. 4 (a)); 4 (b), 4 (c)) sequentially embossed the commercial glue watershed 11120, and cured the pattern of the imprinted polymeric film 7 obtained after demolding.
  • the cured film of the commercial rubber Sylgard 184 soft template (Fig. 4 (c)) is embossed after demolding due to its small modulus (18 MPa) and hardness (2 IMPa).
  • the resulting soft template (e.g., soft template 4) is clearly deformed and bent, and it is apparent that the softness of the commercial gum Sylgard 184 composition is required for a graphic imprinting process requiring high resolution and high aspect ratio.
  • the template does not guarantee the accuracy of the original pattern.
  • the use of the ultraviolet photoresist composition of the present invention as a soft template is superior to the above mechanical properties, that is, its surface energy is low. It is well known that the smaller the surface energy of the soft stencil, the smaller the force between the soft stencil and the cured photoresist embossing film, and the more helpful the demolding. As shown in Table 2, the surface energy (53. OmJ/crn- 2 ) of the UV-free photoresist JTHC-A-1 (Comparative Example 1) after curing is relatively large, and it cannot be removed at all during the experiment. mold.
  • the fluorine-containing group grafted on the POSS-SH is used, the surface energy of the polymer film after ultraviolet curing is remarkably lowered, and a good release effect is exhibited during the experiment. It is illustrated that the cured film of the ultraviolet photoresist composition formed using the compound of the present invention can be used as a soft template in the current nanolithographic preparation process due to its low surface energy.
  • Figs. 3(a), (c) and (e) are different structural patterns of the quartz template 1 respectively: (a) 3.00 ⁇ lattice, (c) 350 nm lattice, (e) 700 nm grating; Figures 3 (b), (d) and (f) respectively utilize a quartz template 1 having Figures 3 (a), (c) and (e) and a UV photoresist JTHC-B-1 combination in the examples, respectively.
  • the corresponding pattern of the soft template produced by the object (b) 3.00 ⁇ lattice, (d) 350nm lattice, (f) 700nm grating.
  • the embossed pattern formed after the embossing process that is, the pattern of FIG. 2(F) 7 is free from defects, the surface is not peeled off, and the structure is intact, because of its excellent technical effects, from which the present invention is provided.
  • the soft stencil pattern of the photoresist composition is effectively replicated in a wide range, and the nano-sized pattern structure can be embossed in a large area, and has excellent reproducibility.
  • Figure 5 is a soft template 4 embossed commercial glue Watershed 11120 of different structures and sizes prepared by using the UV photoresist JTHC-B-2 composition of the embodiment, and cured by demoulding to obtain a graphic commercial adhesive.
  • SEM image of film 7 (a) 350 nm grating, (b) 700 nm lattice.
  • the cured film 7 obtained by using the composition of the present invention has no defects in the pattern, no peeling of the surface, and a complete structure, indicating that the composition of the present invention can be used as a soft template for imprinting.
  • the nano-sized graphic structure is embossed in a large area while being effectively peeled off from the template.
  • the soft template formed by using the composition of the present invention can not only emboss patterns of different sizes, but also emboss patterns of different structures. Knowing that the glue is used as a soft template can meet the requirements of different sizes and different structural patterns in actual production.
  • Figure 6 is a (a) pattern of a soft template prepared by using the ultraviolet photoresist JTHC-B-2 composition of the examples, (b) and (c) respectively of the ultraviolet photoresist JTHC of the examples.
  • the soft template prepared by the -B-2 composition and the soft template prepared from the commercial gum Sylgard 184 composition were printed on 10 times of commercial glue. AFM map after Watershed 11120. It can be seen from Fig. 6 (c) that the commercial glue Sylgard 184 is used as a soft template. After 10 times of application, the surface of the soft template becomes rough and the surface is gradually contaminated, which obviously affects the efficiency and pressure of the template. The integrity of the graphic structure formed after printing. As can be seen from Fig.
  • the surface structure of the soft template after 10 times of use is substantially unchanged and the structure is complete, compared with the pattern 6 (a) before use, indicating the ultraviolet photoresist provided by the present invention.
  • the use of the composition as a soft template has excellent mold release efficiency and can improve the utilization of the soft form.
  • the present invention relates to a compound of the formula (1), a compound using the compound of the formula (1), and the use of the composition as a soft template in an imprinting process, using the compound (1) and the formula
  • the composition system of the compound (2) is uniform in transparency, good in stability, good in storage property, and also because it has a low viscosity and is convenient for spin coating, and can be ideally applied to an imprint process operation, and the pair is lowered. Damage to the quartz template.
  • the composition can also be applied to the preparation of embossed soft stencils, and the embossed soft stencils produced have a large static water contact angle, so that they have superior hydrophobic properties.
  • the soft template can be imprinted without defects. The surface has no peeling and a structurally complete pattern, so the soft template has excellent technical effects.
  • the embossed soft template prepared by the composition has high mechanical strength, is convenient for repeated embossing and does not need to be modified again, and improves the use rate of the soft stencil, and the existing photoresist Compared with the soft template produced, its remarkable technical effects are mainly reflected in:
  • the photoresist has a low viscosity, which is convenient for spin coating and imprint process operations.
  • the soft template has high mechanical strength and wear resistance, which improves the use rate of the template.
  • the low surface energy of the soft template helps to improve the demolding efficiency, and the surface of the template does not need further modification.
  • the obtained embossed pattern has no defects, no peeling on the surface and complete structure.

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Abstract

Provided are a polyhedral oligomeric silsesquioxane compound containing mercapto polyfunctional group shown as general formula (1), its composition used for preparing the soft template for imprinting and the imprinting process, wherein R1 is -CH2-CH2-CH2-SH, and m represents the integer of 3 to 12; R2 is unsubstituted or substituted alkyl group, unsubstituted or substituted alkoxy, unsubstituted or substituted ester group, and unsubstituted or substituted aryl group respectively, and the said substituent group is halogen; n represents the integer of 1 to 12. The composition is a high hydrophobic photoresist. When the composition is applied to prepare nanoimprinting template, a high precision structure can be achieved and the recycling rate of the template may be improved.

Description

含巯基多官能团的低倍多聚硅氧垸化合物及其组合物和压印的软模板  Thiol-based polyfunctional low-poly polysiloxane compounds and compositions thereof and embossed soft templates
技术领域 本发明属于微电子学与纳米电子学中的微纳米加工领域, 涉及含巯基的多官能 团的低倍多聚硅氧垸化合物 (将 "低倍多聚硅氧垸化合物"简称为 "Polyhedral Ol igomeric Si lsesquioxane, 缩写为 POSS" )及其用于制备压印的软模板的组合物 以及压印的软模板。 背景技术 纳米压印光刻技术被认为是最有应用前景的下一代光刻技术之一。 基于其机械 压印原理, 纳米压印技术可以实现的图形分辨率超越了在别的传统技术中由光衍射或 粒子束散射造成的局限, 具有低成本、 高分辨率、 高产能等优点。 其中, 模板是纳米压印光刻(Nanoimprint l ithography, NIL)与传统光学光刻 工艺最大的区别所在, 模板作为压印特征的初始载体直接决定着压印图型的质量, 要 实现高质量的压印复型, 必须要有高质量的压印模板。 不同于传统光学光刻使用的掩 模 (4 X), 纳米压印光刻使用的是 1 X模版, 它在模板制作、 检査和修复技术面临更 大挑战。 当前, 模板的制作已经成为 NIL最大的技术瓶颈, 而且随着纳米压印光刻研 究的日益深入以及应用领域的不断扩大, NIL模板的制造将变的越来越重要并面临着 更加严峻的挑战。 因此, 模板的制造已经成为当前纳米压印光刻一个最重要的研究热 点, 尤其是三维模板、 大面积模板和高分辨率模板的制作、 模板缺陷的检查和修复是 当前及其将来最迫切的需求、 最主要的研究热点和挑战。 传统压印的承载体模板是石英制作, 不仅成本昂贵, 而且极易破碎, 反复工作 后, 刻蚀胶容易粘在模板表面, 这些残留固化聚合物极易破坏结构的复制精密度。 同 时模板多次使用后, 要重新氟化处理, 多次处理对材料结构本身有破坏作用。 因此, 迫切需要有新的材料能够取代石英基模板, 节约成本, 提高模板利用率。 目前很多研 究团队致力于软模板的研究, 软模板泛指基质是软的材料做成的模板, 通常是以光刻 胶作为预聚物, 利用压印技术在其表面制作图形, 再通过热固化或者紫外光固化成 型, 得到反向复制图形的聚合物软模板。 相比于硬模板, 软模板不仅制备工艺简单, 大大节约了成本; 同时由于本身的软基质, 可以替代硬性材料无法弯曲的缺点, 大大 提高了压印的质量。 经过对现有技术的检索发现, 目前最成功商业化, 应用于软模板制造的压印光 刻胶产品是聚二甲基硅氧垸 (PDMS)。 PDMS是一种广泛应用于微流体等领域的聚合物 材料。 它成本低, 使用简单, 同硅片之间具有良好的粘附性, 而且具有良好的化学惰 性, 因此常用于芯片封装等领域。 由于其良好的透光率, 较低的表面能 FIELD OF THE INVENTION The present invention relates to the field of micro/nano processing in microelectronics and nanoelectronics, and relates to a polyfunctional polysiloxane-containing polysiloxane compound (referred to as "low poly polysiloxane compound" simply as "Polyhedral" Ol igomeric Si lsesquioxane, abbreviated as POSS") and its composition for preparing embossed soft stencils and embossed soft stencils. BACKGROUND Nanoimprint lithography is considered to be one of the most promising next-generation lithography technologies. Based on its mechanical imprinting principle, nanoimprint technology can achieve graphics resolution beyond the limitations of light diffraction or particle beam scattering in other traditional technologies, with low cost, high resolution, high productivity and so on. Among them, the template is the biggest difference between nanoimprint lithography (NIL) and traditional optical lithography. The template as the initial carrier of the embossed feature directly determines the quality of the embossed pattern, and achieves high quality. For embossing replicas, high quality stamping stencils are required. Unlike the masks used in traditional optical lithography (4 X), nanoimprint lithography uses the 1 X template, which faces greater challenges in stencil making, inspection and repair techniques. At present, the fabrication of templates has become the biggest technical bottleneck of NIL, and with the deepening of nanoimprint lithography research and the expanding application fields, the manufacture of NIL templates will become more and more important and face more severe challenges. . Therefore, the fabrication of templates has become one of the most important research hotspots in nanoimprint lithography, especially the fabrication of 3D templates, large-area templates and high-resolution templates, and the inspection and repair of template defects are the most urgent in the future and in the future. Demand, the most important research hotspots and challenges. The traditional embossed carrier template is made of quartz, which is not only expensive, but also extremely fragile. After repeated work, the etchant is easily adhered to the surface of the stencil. These residual cured polymers can easily damage the replication precision of the structure. At the same time, after the template is used for many times, it needs to be refluorinated, and the multiple treatments have a destructive effect on the material structure itself. Therefore, there is an urgent need for new materials to replace quartz-based templates, saving costs and increasing template utilization. Many researches at present The team is dedicated to the study of soft stencils. Soft stencils refer to substrates made of soft materials. They are usually made of photoresist as a prepolymer. They are patterned on the surface by imprinting, and then cured by heat or UV. Photocuring to obtain a polymer soft template with a reverse replication pattern. Compared with the hard template, the soft template not only has a simple preparation process, but also greatly saves cost; at the same time, due to its soft matrix, it can replace the disadvantage that the hard material cannot be bent, and the quality of the imprint is greatly improved. A search of the prior art found that the most successful commercialization of the currently used imprinted photoresist product for soft stencil fabrication is polydimethylsiloxane (PDMS). PDMS is a polymer material widely used in fields such as microfluidics. It is low in cost, simple to use, has good adhesion to silicon wafers, and has good chemical inertness, so it is often used in chip packaging and other fields. Lower surface energy due to its good light transmission
(21. 6raJ/cra3) 和收缩率,以及及其优异的抗溶剂性能, 使得 PDMS材料成为近年来软 模板制作的热点。 但是 PDMS胶的粘度大, 固化后膜的机械性能比较差, 不耐磨损, 尤其是不能制作高精度, 高分辨率的图形 (图形结构小于 200舰后, PDMS模板结构 很容易破损和变形) , 使得该材料进一步的应用受到限制。 随着光刻技术的发展, 对 精密度要求越来越高, 目前大规模集成电路芯片上特征线条已经达到的平均线条宽度 45nm,而国际上众多公司还在向更小的线条尺寸进军。 显然, PDMS材料作为软模板已 经不适应软膜技术的要求。 近几年, 硫醇 /烯类紫外光刻胶由于具有点击化学的反应高效、 快速, 反应条 件温和等特点,, 显示出更大的应用情景。 巯基 /烯类紫外光聚合反应是指含有两个以 上巯基 (- SH)的单体与含有不饱和碳碳双键 (-C=C- )单体之间的自由基逐步聚合反应。 与 (甲基)丙烯酸酯紫外光自聚合反应相比, 因为体系中引入含有巯基的共聚单体, 从 本质上改变其聚合机理, 使光聚合反应由自由基链式自聚转变为自由基逐步共聚, 从 而使聚合物分子量逐步增长, 推迟凝胶现象的发生, 有效降低了氧阻聚效应, 可大大 提高双键的转化率, 减小聚合物的体积收縮。 而且, 巯基 /烯类单体光聚合反应所需 光引发剂用量非常少, 甚至可以不用, 所以利用光固化来制备较厚制件成为了可能。 为了改善和提高聚合物的机械性能, 通常是添加无机填料, 但是由于无机粒子 本身与聚合物前驱体的不兼容性, 过多掺杂就会使体系分相, 大大的影响了材料的性 能。 最近, 新型有机硅高分子材料研究的越来越受到人们的重视。 其中低聚倍半硅氧 烷 POSS (Polyhedral Oligomeric Silsesquioxane)是有机硅中应用较广的一类, 其 基本组成是由 Si-0键构成主链, 侧链则是与硅原子相连的各种有机基团, 因此, 在 有机硅材料的结构中既含有有机基团, 又含有无机骨架。 由于 P0SS单体在混和的过 程中是可溶性的,所以可以认为是真正意义上形成分子水平级分散的聚合物, 使其具 备了很多纳米材料添加剂无法达到的特点: P0SS骨架呈纳米级分散在聚合物基体中具 有密度小、 单分散性好、 不吸潮、 热稳定性高的优点; 其优异的相容性, 在共混时克 服了复合材料相界面弱的问题将这种有机硅与其它有机高分子聚合, 可制得有机 /无 机纳米复合材料。 由于有无机纳米相的存在, 使材料在性能上有很大的飞跃, 成为制 备高性能及功能性材料的重要手段, 是目前材料科学中最富有生机和活力的领域之 (21.6raJ/cra 3 ) and shrinkage, as well as its excellent solvent resistance, make PDMS materials a hot spot in soft template production in recent years. However, the viscosity of PDMS glue is large, the mechanical properties of the film after curing are relatively poor, and it is not resistant to abrasion. In particular, high-precision, high-resolution graphics cannot be produced (after the graphic structure is less than 200 ships, the PDMS template structure is easily broken and deformed) , making further application of this material limited. With the development of lithography technology, the precision requirements are getting higher and higher. At present, the average line width of the characteristic lines on the large-scale integrated circuit chip has reached 45 nm, and many companies in the world are still marching toward smaller line sizes. Obviously, PDMS materials as soft templates have not adapted to the requirements of soft film technology. In recent years, thiol/olefinic UV photoresists have shown a larger application scenario due to the high efficiency, rapid response and mild reaction conditions of the click chemistry. The mercapto/olefin-based ultraviolet photopolymerization reaction refers to a radical polymerization of a monomer having two or more mercapto groups (-SH) and a monomer having an unsaturated carbon-carbon double bond (-C=C-). Compared with the ultraviolet (meth) acrylate self-polymerization reaction, since the comonomer containing fluorenyl group is introduced into the system, the polymerization mechanism is changed in essence, and the photopolymerization reaction is changed from free-radical chain self-polymerization to radical gradualization. Copolymerization, so that the molecular weight of the polymer is gradually increased, the gelation phenomenon is delayed, the oxygen inhibition effect is effectively reduced, the conversion rate of the double bond is greatly improved, and the volume shrinkage of the polymer is reduced. Moreover, the amount of photoinitiator required for photopolymerization of mercapto/olefin monomers is very small, or even unnecessary, so it is possible to use light curing to prepare thicker parts. In order to improve and improve the mechanical properties of the polymer, inorganic fillers are usually added. However, due to the incompatibility of the inorganic particles themselves with the polymer precursor, excessive doping causes the system to be phase-separated, greatly affecting the properties of the material. Recently, research on new types of silicone polymer materials has received increasing attention. Among them, POSS (Polyhedral Oligomeric Silsesquioxane) is a widely used class of silicones, The basic composition is composed of a Si-0 bond, and the side chain is a variety of organic groups bonded to a silicon atom. Therefore, the structure of the silicone material contains both an organic group and an inorganic skeleton. Since the P0SS monomer is soluble in the process of mixing, it can be considered as a polymer which is formed in the true sense of molecular level dispersion, which has many characteristics that cannot be achieved by nanomaterial additives: P0SS skeleton is dispersed in the nanometer scale in the polymerization. The substrate has the advantages of low density, good monodispersity, no moisture absorption, and high thermal stability; its excellent compatibility overcomes the problem of weak phase interface of the composite during blending. Organic polymer polymerization can produce organic/inorganic nanocomposites. Due to the presence of inorganic nanophases, the material has a great leap in performance, and has become an important means of preparing high-performance and functional materials. It is the most dynamic and dynamic field in materials science.
美国专利 US007691275B2介绍并公开了一种含活性氢官能团的 P0SS化合物, 并将这种 P0SS化合物和双键类官能团的单体组合形成一种压印光刻胶组合物, 进一 步的通过紫外纳米压印形成纳米图形。 专利 US20110062619A1介绍并公开了一种制备 含甲氧基硅烷官能团的 P0SS化合物的方法, 并将这种 P0SS化合物通过热聚合的方式 用于纳米压印中。 专利 US20080166871A1介绍并公开了一种含丙烯酸酯或者环氧类官 能团的 P0SS,并将这种 P0SS化合物与其他稀释剂、 光引发剂形成压印光刻胶组合 物, 进一步通过紫外纳米压印形成纳米图形。 很显然, 现有技术中将 P0SS化合物作 为压印胶组合物的必要组份, 能够明显的提高聚合物膜的机械性能、 热性能、 抗刻蚀 性能等。 但是, 现有技术中将 P0SS化合物用于制造压印软模板研究相对较少, 同时 基于现有紫外光刻胶本身的一些缺陷, 例如丙烯酸酯类光刻胶, 即使引进了 P0SS化 合物, 仍不可避免的会产生氧阻聚的缺点, 造成图形表面边缘形的缺陷, 以及丙烯酸 酯类低收缩率的特性, 从而影响了软模板的精密度; 而环氧树脂类光刻胶, 由于其较 高的表面能, 通常不能直接作为软模板使用, 需要在图形表面修饰含氟的基团以降低 表面能, 过程繁琐。 同时由于环氧树脂的低抗湿性, 热致黄变的缺陷, 必然导致软模 板使用次数大大受限。 发明内容 本发明针对现有技术存在的上述不足, 通过对含巯基的低倍多聚硅氧烷化合物US Patent No. 007691275B2 describes and discloses a P0SS compound containing an active hydrogen functional group, and combines the P0SS compound and a monomer of a double bond functional group to form an imprinted photoresist composition, further passing ultraviolet nanoimprinting. Form nanopatterns. Patent US20110062619A1 describes and discloses a process for preparing a methoxysilane-containing P0SS compound, and this P0SS compound is used in nanoimprinting by thermal polymerization. Patent US20080166871A1 describes and discloses a P0SS containing an acrylate or epoxy functional group, and forms the P0SS compound with other diluents and photoinitiators to form an imprinted photoresist composition, and further forms a nanometer by ultraviolet nanoimprinting. Graphics. It is apparent that in the prior art, the P0SS compound is an essential component of the embossing composition, and the mechanical properties, thermal properties, etching resistance and the like of the polymer film can be remarkably improved. However, in the prior art, there are relatively few studies on the use of P0SS compounds for the manufacture of imprinted soft templates, and at the same time based on some defects of the existing ultraviolet photoresists, such as acrylate photoresists, even if P0SS compounds are introduced, Avoiding the disadvantages of oxygen inhibition, resulting in edge defects on the surface of the pattern, and low shrinkage of acrylates, thus affecting the precision of the soft template; epoxy resin, due to its higher The surface energy, usually not directly used as a soft template, requires modification of the fluorine-containing groups on the surface of the pattern to reduce the surface energy, which is cumbersome. At the same time, due to the low moisture resistance of the epoxy resin, the defect of heat-induced yellowing will inevitably lead to a limited limitation on the number of times the soft mold plate is used. SUMMARY OF THE INVENTION The present invention is directed to the above-mentioned deficiencies of the prior art by using a fluorenyl-containing low polypolysiloxane compound.
(简称 POSS- SH) 巯基端基嫁接低表面能的有机官能团, 将硫醇点击化学和 P0SS氟 化物的优势结合起来, 开发出新型的用于制备压印的软模板的化合物和紫光光刻胶组 合物。 该光刻胶组合物制备出的软模板具有低表面张力、 高脱模效率、 高机械强度, 并且本发明进一步将此软模板应用于商业紫外光刻胶压印中, 得到很好的脱模效果以 及大范围高精细的图形结构。 本发明所提供的光刻胶, 不仅仅可以在压印技术中作为软模板使用, 同时由于 较高的抗氧刻蚀能力, 可以作为压印技术中的牺牲层使用。 本发明是通过以下技术方案实现的: (POSS-SH for short) The thiol end group grafts a low surface energy organic functional group, combining the advantages of thiol click chemistry and P0SS fluoride to develop a novel compound for the preparation of embossed soft stencils and violet photoresist. Group Compound. The soft template prepared by the photoresist composition has low surface tension, high mold release efficiency, high mechanical strength, and the present invention further applies the soft template to commercial ultraviolet photoresist imprinting, and obtains good mold release. Effects and a wide range of high-definition graphics structures. The photoresist provided by the invention can be used not only as a soft template in the imprint technique, but also as a sacrificial layer in the imprint technique due to the high resistance to oxygen etching. The invention is achieved by the following technical solutions:
本发明提供一种通式(1)所示的含巯基多官能团的低倍多聚硅氧垸化合物, m · ( SiO^CH^HsCHsSRa ) n (1) 其中 R - CH2-CH2- C¾-SH, m表示 3〜12的整数; R2分别为无取代或者被取代基 取代的垸基、 无取代或者被取代基取代的酯基和无取代或者被取代基取代的芳香基, 所述取代基为卤素原子或硅原子, n表示 1〜12的整数。 本发明还提供一种基于上述的技术方案, 所述的 R2分别为无取代或者被取代基 取代的 Ci-Cw烷基、 无取代或者被取代基取代的 C3- C15酯基或者无取代或者被取代基 取代的 C6- C2。芳香基, 所述的取代基为氟原子、 氯原子、 溴原子、 碘原子或者硅原子 的技术方案。 The present invention provides a fluorenyl-containing polyfunctional fluorene-containing polysiloxane compound represented by the formula (1), m · (SiO^CH^HsCHsSRa ) n (1) wherein R - CH 2 -CH 2 - C3⁄4 -SH, m represents an integer of from 3 to 12; R 2 is an unsubstituted or substituted fluorenyl group, an unsubstituted or substituted ester group, and an unsubstituted or substituted aryl group, respectively. The substituent is a halogen atom or a silicon atom, and n represents an integer of 1 to 12. The present invention also provides a method according to the above, wherein R 2 is an unsubstituted or substituted Ci—Cw alkyl group, an unsubstituted or substituted C 3 -C 15 ester group or none. C 6 - C 2 substituted or substituted with a substituent. The aromatic group, the substituent is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or a silicon atom.
本发明还提供一种基于上述的技术方案, 所述的 C3- C15酯基是被氟取代的 C3 - C15 酯基的技术方案。 + 本发明还提供一种基于上述的技术方案, 所述的被氟取代的 C3- C15酯基为丙酸 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8-十三氟代辛酯基或 2-甲基-丙酸 The present invention also provides a technical solution based on the above technical solution, wherein the C 3 - C 15 ester group is a C 3 - C 15 ester group substituted by fluorine. The present invention also provides a solution based on the above, wherein the fluorine-substituted C 3 - C 15 ester group is propionic acid 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8-trifluorooctyl ester or 2-methyl-propionic acid
2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7 -十二氟代庚酯基的技术方案。 本发明还提供一种基于上述的技术方案, 所述的 C6- C2Q芳香基是苯乙基的技术 方案。 本发明还提供一种基于上述的技术方案, 所述 Ci- 。垸基为被氟取代的 。烷 基的技术方案。 本发明还提供一种基于上述的技术方案, 所述的被氟取代的 。垸基是 1, 1, 1 , 2, 2, 3, 3 , 4, 4, 5 , 5, 6, 6, 7, 7, 8, 8-十七氟代癸基的技术方案。 Technical solution for 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7-dodefluoroheptyl ester. The present invention also provides a technical solution based on the above technical solution, wherein the C 6 -C 2Q aryl group is a phenethyl group. The present invention also provides a Ci- based on the above technical solution. The thiol group is replaced by fluorine. A technical solution for alkyl groups. The present invention also provides a method according to the above, wherein the fluorine is substituted. The fluorenyl group is a technical solution of 1, 1, 1 , 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-heptadefluoro-fluorenyl.
本发明提供一种用于制备压印工序中的软模板的组合物, 包含上述所示的化合 物。 本发明还提供一种基于上述的软模板的组合物, 还包含通式 (2)的化合物、 交 联剂和光引发剂的软模板的组合物,  The present invention provides a composition for preparing a soft template in an imprinting process, comprising the compound shown above. The present invention also provides a composition based on the soft template described above, further comprising a composition of a compound of the formula (2), a crosslinking agent and a soft template of a photoinitiator,
CHR CR^ (2) 通式 (2)中的 Ri、 R2和 R3分别为氢原子、 d- 烧基、 d- C2。烷氧基、 C6- C2。芳香 基、 C,- C2。酉旨基、 C3-C2。环垸基、 C3-C2。酰亚胺类基团, 所述通式(2)可以被卤素原子或 者硅原子取代。 本发明还提供一种基于上述的软模板的组合物, 所述通式 (2)的化合物为选自 C3-C15烯烃、 C3- C15乙烯基醚、 C3- C15乙烯基酰胺, C3-C2。 (甲基) 丙烯酸酯, 所述取代基 为氟原子或者硅原子的软模板的组合物。 本发明还提供一种基于上述的软模板的组合物, 所述 C3- C15烯烃选自 1-丁烯、 1-己烯、 1-庚烯、 全氟己烯、 全氟庚烯或者偏氟庚烯; 所述 C3- C15乙烯基醚选自乙烯 基乙醚、 乙烯基丁醚、 乙烯基己二醇醚, 2, 2, 2-三氟乙基乙烯醚或者 2-全氟丙氧基 全氟丙基三氟乙烯基醚; 所述 C3- C2。 (甲基) 丙烯酸酯选自丁烯酸酯、 甲基丙烯酸苄 酯、 苯氧基乙二醇丙烯酸酯、 1H,1H,2H,2H-全氟辛醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸 醇丙烯酸酯或者 1H, 1H, 7H-十二氟庚基甲基丙烯酸酯的软模板的组合物。 本发明还提供一种基于上述的软模板的组合物, 所述通式 (2)的化合物是甲基 丙烯酸苄酯, 1H, 1H, 2H, 2H-全氟辛醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸醇丙烯酸酯的软 模板的组合物。 本发明还提供一种基于上述的软模板的组合物, 所述交联剂选自 1, 4-丁二 烯、 2,5-二甲基 - 1,5-己二烯 - 3-醇、 全氟己二烯、 1 , 3-二乙烯 -1,1, 3, 3-四甲基二硅 氧垸、 新戊二醇二丙烯酸酯、 1, 6-己二醇二丙烯酸酯、 二丙二醇二丙烯酸酯、 1 , 6- 二(丙烯酰氧基)-2, 2, 3, 3, 4, 4, 5, 5-八氟己烷、 1, 5 -二(丙烯酰氧基 ) -2, 2, 3, 3, 4, 4- 六氟戊烷、 三羟甲基丙垸三甲基丙烯酸酯, 三羟甲基丙烷三丙烯酸酯的软模板的组合 物。 本发明还提供一种基于上述的软模板的组合物, 所述通式(1)的化合物为 5〜65 质量%, 通式(2)的化合物为 10〜60质量%, 交联剂为 5〜45质量%, 光引发剂为 0. 3〜3质量%, 各组分的质量之和为 100%的软模板的组合物。 本发明提供一种压印的软模板, 由上述的紫外光刻胶组合物所形成。 本发明提供一种压印的软模板的制备方法, 其包括如下步骤: CHR CR^ (2) Ri, R 2 and R 3 in the formula (2) are each a hydrogen atom, a d-alkyl group, and d-C 2 . Alkoxy, C 6 - C 2 . Aromatic groups, C, - C 2 .酉 基, C 3 -C 2 . Cyclodecyl, C 3 -C 2 . The imide group, the formula (2) may be substituted by a halogen atom or a silicon atom. The present invention also provides a composition based on the soft template described above, wherein the compound of the formula (2) is selected from the group consisting of C 3 -C 15 olefins, C 3 - C 15 vinyl ethers, C 3 - C 15 vinyl groups Amide, C 3 -C 2 . (Meth)acrylate, a composition in which the substituent is a fluorine atom or a soft template of a silicon atom. The present invention also provides a composition based on the soft template, the C 3 - C 15 olefins selected from 1-butene, 1-hexene, 1-heptene, perfluoro-hexene, heptene, or perfluoro a fluorofluoroheptene; the C 3 -C 15 vinyl ether is selected from the group consisting of vinyl ethyl ether, vinyl butyl ether, vinyl hexane glycol ether, 2, 2, 2-trifluoroethyl vinyl ether or 2-perfluoro Propoxy perfluoropropyl trifluorovinyl ether; said C 3 - C 2 . (Meth)acrylate is selected from crotonate, benzyl methacrylate, phenoxyethylene glycol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H a composition of perfluorodecyl acrylate or a soft template of 1H, 1H, 7H-dodecafluoroheptyl methacrylate. The present invention also provides a composition based on the soft template described above, wherein the compound of the formula (2) is benzyl methacrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, A composition of a soft template of 2H, 2H-perfluorononanol acrylate. The present invention also provides a composition based on the soft template described above, wherein the crosslinking agent is selected from the group consisting of 1, 4-butadiene, 2,5-dimethyl-1,5-hexadien-3-ol, Perfluorohexadiene, 1,3-diethylene-1,1,3,3-tetramethyldisiloxane, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, dipropylene glycol Diacrylate, 1,6-bis(acryloyloxy)-2, 2, 3, 3, 4, 4, 5, 5-octafluorohexane, 1,5-bis(acryloyloxy)-2 , 2, 3, 3, 4, 4- A composition of a soft template of hexafluoropentane, trimethylolpropane trimethacrylate, trimethylolpropane triacrylate. The present invention also provides a composition based on the soft template described above, wherein the compound of the formula (1) is 5 to 65 mass%, the compound of the formula (2) is 10 to 60 mass%, and the crosslinking agent is 5 The composition of the soft template is 5% by mass, and the photoinitiator is 0.3 to 3 mass%, and the sum of the masses of the components is 100%. The present invention provides an embossed soft template formed from the above-described ultraviolet photoresist composition. The invention provides a method for preparing an embossed soft template, which comprises the following steps:
(1) .修饰衬底石英片 (3) ; (1). Modified substrate quartz plate (3);
(2) .将权利要求 8— 14中任一项的组合物的压印紫外光刻胶 (2)旋转涂膜在所 述修饰过的石英片(3)表面上, 其条件是: 以 300rpm旋转涂膜 10秒后, 再以 (2) The embossed UV photoresist (2) of the composition of any one of claims 8 to 14 is spin-coated on the surface of the modified quartz plate (3) under the following conditions: at 300 rpm After rotating the film for 10 seconds,
3000rpm旋转涂膜 20秒, 得到的膜厚为 750± 5nm; The film was rotated at 3000 rpm for 20 seconds to obtain a film thickness of 750 ± 5 nm ;
(3) .将带有紫外光刻胶 (2)的石英片(3), 与石英模板(1)进行接触, 放入压印 机中, 抽真空 3分钟, 给石英模板(1)施加 100N的压力, 紫外曝光 3分钟, 待光刻胶 固化后, 进行脱模, 再在 10CTC下继续老化 1小时, 老化后的聚合物作为压印的软模 板使用, 形成了软模板 (4)。 本发明提供一种压印光刻胶的工艺及其所制得的压印图形, 使用了上述的软模 板。 (3). The quartz plate (3) with the UV photoresist (2) is brought into contact with the quartz template (1), placed in an imprinting machine, evacuated for 3 minutes, and 100 N is applied to the quartz template (1). The pressure, UV exposure for 3 minutes, after the photoresist was cured, demolded, and then aging for 1 hour at 10 CTC, the aged polymer was used as an embossed soft template to form a soft template (4). The present invention provides a process for imprinting a photoresist and an embossed pattern obtained by using the above-described soft mold.
通过使用了通式化合物(1)和通式化合物(2)的组合物体系透明均一, 稳定性 好, 有良好的储存性能, 同时还因为其具有低粘度, 便于进行旋涂涂覆, 可以理想 地应用于压印工艺操作中, 降低了对石英模板的损害。  The composition system using the compound of the formula (1) and the compound of the formula (2) is transparent, uniform, stable, and has good storage properties, and is also desirable because it has a low viscosity and is convenient for spin coating. Applied to the imprint process operation, the damage to the quartz template is reduced.
另外, 该组合物还可以应用于压印的软模板的制备中, 所制得的压印的软模 板具有较大的静态水接触角, 所以具有超强的疏水性能。 另外还因为具有很小的表 面能, 所以具有高脱模性, 可以表现在石英板的图形可以很好地复制在软模板上, 还同时可以表现用该软模板可以压印出无缺陷, 表面无剥离, 结构完整的图形, 所 , 该软模板具有优异的技术效果。 另外, 该组合物所制得的压印的软模板具有较 高的机械强度, 便于反复多次压印使用且无需再次进行修饰, 提高了软模板的使用 率, 与现有的光刻胶所制得的软模板相比, 其显著的技术效果主要体现在:In addition, the composition can also be applied to the preparation of embossed soft stencils, and the embossed soft stencil produced has a large static water contact angle, so that it has superior hydrophobic properties. In addition, because of its small surface energy, it has high mold release property, and the pattern of the quartz plate can be well reproduced on the soft template. At the same time, the soft template can be used to imprint the defect-free surface. No peeling, structurally complete graphics, the soft template has excellent technical effects. In addition, the embossed soft template prepared by the composition has high mechanical strength, is convenient for repeated embossing and does not need to be modified again, and improves the use of the soft template. Compared with the soft stencil made by the existing photoresist, the remarkable technical effects are mainly reflected in:
1.光刻胶粘度较低, 便于旋涂涂覆与压印工艺操作。 1. The photoresist has a low viscosity, which is convenient for spin coating and imprint process operations.
2.软模板机械强度较高, 耐磨损, 提高了模板的使用率。  2. The soft template has high mechanical strength and wear resistance, which improves the use rate of the template.
3.软模板的低表面能有助于提高脱模效率, 且模板表面无需进一步的修饰, 所制得的压印图形无缺陷, 表面无剥离, 结构完整。 附图说明  3. The low surface energy of the soft template helps to improve the demolding efficiency, and the surface of the template does not need further modification. The obtained embossed pattern has no defects, no peeling on the surface and complete structure. DRAWINGS
图 1分别是实施列 1-5合成的化合物的结构图以及对应的核磁氢图: 图 1(a): P0SS-SH;  Figure 1 is a structural diagram of the compounds synthesized in the columns 1-5 and corresponding nuclear magnetic hydrogen diagrams: Figure 1 (a): P0SS-SH;
图 1 (b): POSS— SCFA6- SH; Figure 1 (b): POSS - SCFA 6 - SH;
图 1 (c): P0SS-SDCFA6-SH; Figure 1 (c): P0SS-SDCFA 6 -SH ;
图 1 (d): P0SS-SS-SH;  Figure 1 (d): P0SS-SS-SH;
图 1 (e): P0SS-SPFDE8-SHo Figure 1 (e): P0SS-SPFDE 8 -SHo
图 2是软模板制造及其压印普通商业光刻胶的工艺流程。  Figure 2 is a process flow for soft stencil fabrication and imprinting of a conventional commercial photoresist.
图 3(a)、 (c)和(e)分别为石英模板 1的不同结构图形: (&) 3.00μπι点阵, (c) 350nm点阵, (e) 700nm光栅;  Figures 3(a), (c) and (e) show the different structural patterns of the quartz template 1 respectively: (&) 3.00μπι lattice, (c) 350nm lattice, (e) 700nm grating;
图 3(b)、 (d)和(f)分别是利用了具有图 3(a)、 (c)和(e)的石英模板 1和下 述实施例中的紫外光刻胶 JTHC-B-1组合物所制得的软模板的相应的图形: 即 (b) 3·00μιη点阵, (d) 350nm点阵, (f) 700nm光栅。  3(b), (d) and (f) respectively utilize the quartz template 1 having Figs. 3(a), (c) and (e) and the ultraviolet photoresist JTHC-B- in the following examples. 1 Corresponding figures of the soft template prepared by the composition: (b) 3·00 μιη dot matrix, (d) 350 nm dot matrix, (f) 700 nm grating.
图 4为 SEM图, 分别是: 图 4(a)200nm点阵石英模板 1; 图 4 (b) 、 4 (c) 分别是下述实施例的 JTHC- B-2紫外光刻胶组合物、 商业胶 Sylgardl84组合物经模 板 1 (图 4 (a) ) 所制得的软模板 4的图形模样; 图 4 (d) 和图 4(e)分别是上述 所制得两种软模板依次压印商业胶 watershed 11120, 固化脱模后得到的压印聚合 膜 7的图形的模样。  Figure 4 is an SEM image, respectively: Figure 4 (a) 200 nm lattice quartz template 1; Figures 4 (b), 4 (c) are the JTHC-B-2 ultraviolet photoresist composition of the following examples, The pattern of the soft template 4 prepared by the commercial glue Sylgardl 84 composition through the template 1 (Fig. 4 (a)); Fig. 4 (d) and Fig. 4 (e) are the two types of soft templates prepared in the above-mentioned, respectively. The commercial glue watershed 11120, the pattern of the imprinted polymeric film 7 obtained after the demolding is cured.
图 5是通过采用下述实施例的紫外光刻胶 JTHC- B-2组合物所制得的不同结 构和尺寸的软模板 4压印商业胶 Watershed 11120, 固化脱模后得到带有图形的商 业胶固化膜 7的 SEM图: (a) 350,光栅, (b) 700nm点阵。  Figure 5 is a soft template 4 embossed commercial glue Watershed 11120 of different structures and sizes prepared by using the UV photoresist JTHC-B-2 composition of the following examples, which is obtained by patterning after curing. SEM image of the cured film 7: (a) 350, grating, (b) 700 nm dot matrix.
图 6分别是 (a) 通过采用下述实施例的紫外光刻胶 JTHC-B-2组合物所制得 的软模板的图形模样、 (b)和(c)分别是下述实施例的紫外光刻胶 JTHC-B-2组合物 所制得的软模板和商业胶 Sylgard 184组合物所制得的软模板在压印商业胶 Watershed 1 1120, 在使用 10次以后的 AFM图。 Figure 6 is a (a) pattern of a soft template prepared by using the ultraviolet photoresist JTHC-B-2 composition of the following examples, and (b) and (c) are respectively the ultraviolet rays of the following examples. Soft template prepared from photoresist JTHC-B-2 composition and soft template prepared from commercial gum Sylgard 184 composition in embossed commercial adhesive Watershed 1 1120, AFM chart after 10 uses.
标号说明:  Label description:
1、 石英模板, 2、 紫外压印光刻胶, 3、 石英片, 4、 软模板, 5、 商业光刻 胶, 6、 硅衬底, 7、 带有图形的商业胶固化膜。 具体实施方式  1, quartz template, 2, UV imprinted photoresist, 3, quartz, 4, soft template, 5, commercial lithography, 6, silicon substrate, 7, commercial adhesive film with graphics. detailed description
本发明提供一种通式 (1)所示的含巯基多官能团的低倍多聚硅氧垸化合物, ( SiO^R m · ( SiOL 5CH2CH2CH2SR2 ) n (1) 其中 为- CH2- C -CH2- SH, m表示 3〜12的整数; R2分别为无取代或者被取代基 取代的垸基、 无取代或者被取代基取代的酯基和无取代或者被取代基取代的芳香基, 所述取代基为卤素原子或硅原子 , η表示 1〜12的整数。 上述的 分别为无取代或者被取代基取代的 d- 垸基、 无取代或者被取代基 取代的 C3- C15酯基或者无取代或者被取代基取代的 C6-C2。芳香基, 所述的取代基为氟 原子、 氯原子、 溴原子、 碘原子或者硅原子。 上述的 C3- C15酯基较好是被氟取代的 C3- C15酯基, 所述的被氟取代的 C3-C15酯基 为丙酸 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8 -十三氟代辛酯基或 2-甲基-丙酸 The present invention provides a fluorenyl-containing polyfunctional group-containing low-poly polysiloxane compound represented by the formula (1), (SiO^R m · (SiO L 5 CH 2 CH 2 CH 2 SR 2 ) n (1) wherein is - CH 2 - C -CH 2 - SH, m represents an integer of 3~12; R 2 are unsubstituted or substituted alkyl with the substituent group, substituted or unsubstituted ester group, and a substituted or unsubstituted An aromatic group substituted with a substituent, wherein the substituent is a halogen atom or a silicon atom, and η represents an integer of 1 to 12. The above are respectively an unsubstituted or substituted d-fluorenyl group, an unsubstituted or substituted group. a substituted C 3 -C 15 ester group or a C 6 -C 2 aryl group which is unsubstituted or substituted with a substituent, and the substituent is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or a silicon atom. C 3 - C 15 ester group is preferably a fluorine-substituted C 3 - C 15 ester group, the fluorine-substituted C 3 -C 15 acid ester is a 3, 3, 4, 4, 5, 5 , 6, 6, 7, 7, 8, 8, 8 -tridecafluorooctyl or 2-methyl-propionic acid
2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7-十二氟代庚酯基。 所述的 C6- C2。芳香基是苯乙基。 所述 。垸基为被氟取代的 d- 。烷基; 所述的被氟取代的 d-C,。烷基是 1, 1, 1, 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-十七氟代癸基。 本发明涉及通式(1)所示的含巯基的多官能团的低倍多聚硅氧烷化合物的制 备方法, 该方法依次包括如下步骤: 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7-dodefluoroheptyl ester. Said C 6 - C 2 . The aromatic group is phenethyl. Said. The fluorenyl group is d- substituted by fluorine. An alkyl group; said dC substituted by fluorine. The alkyl group is 1, 1, 1, 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-heptadecyfluorenyl. The present invention relates to a process for preparing a fluorenyl-containing polyfunctional low polypolysiloxane compound represented by the general formula (1), which method comprises the following steps in sequence:
步骤 (1 ) 可以根据如下的公认技术 [1'2]进行制备: Step (1) can be prepared according to the following recognized technique [1 ' 2] :
即, 将硅垸单体或其混合物、 浓盐酸依次加入带有磁力搅拌器的单口烧瓶 中, 然后添加一定量的甲醇溶剂对其进行溶解, 经加热回流反应一段时间后, 静 置, 滤去上层清液, 得到乳白色产物, 将该乳白色产物用二氯甲烷溶解, 再加入过 量甲醇溶剂沉降产物, 反复三次后, 旋转蒸法, 蒸干溶剂得到纯化的含巯基的低倍 多聚硅氧垸化合物(简称 P0SS-SH)。 That is, a silicon germanium monomer or a mixture thereof, concentrated hydrochloric acid is sequentially added to a one-necked flask equipped with a magnetic stirrer, and then dissolved in a certain amount of methanol solvent, and after refluxing for a while, the mixture is allowed to stand, and then filtered. The supernatant liquid is obtained as a milky white product, and the milky white product is dissolved in dichloromethane, and then added. The methanol solvent was allowed to settle, and after repeated three times, the solvent was evaporated by rotary evaporation, and the solvent was evaporated to obtain a purified fluorenyl-containing low-poly polysiloxane compound (P0SS-SH for short).
前述步骤中所用的硅烷单体或其混合物为 (3—巯基丙基) 三甲氧基硅垸 ( TPS ) 、 (3—巯基丙基) 三甲氧基硅垸 (TPS ) 与正辛基三乙氧基硅垸 (0TES ). 的混合物、 (3—巯基丙基) 三甲氧基硅垸 (TPS) 与苯基三甲氧基硅垸 (PTMS ) 的 混合物、 (3—巯基丙基) 三甲氧基硅烷 (TPS ) 与 1, 1, 1, 2 , 2, 3, 3, 4, 4, 5, 6, 7—十二氟癸基三甲氧基硅垸 (FPTES ) 的混合物。  The silane monomer or a mixture thereof used in the foregoing step is (3-mercaptopropyl)trimethoxysilane (TPS), (3-mercaptopropyl)trimethoxysilane (TPS) and n-octyltriethoxy a mixture of silicon germanium (0TES)., a mixture of (3-mercaptopropyl)trimethoxysilane (TPS) and phenyltrimethoxysilane (PTMS), (3-mercaptopropyl)trimethoxysilane (TPS) A mixture with 1, 1, 1, 2, 2, 3, 3, 4, 4, 5, 6, 7-dodecafluorodecyltrimethoxysilane (FPTES).
所述的加热回流是指: 在 50- 100°C回流 24-40小时。  The heating and refluxing means: refluxing at 50-100 ° C for 24-40 hours.
所述的浓盐酸的质量浓度范围为: 35-37%。  The concentrated hydrochloric acid has a mass concentration range of 35-37%.
[1] H. Z. Liu, S. X. Zheng, K. M. Nie, Macromolecules 2005, 38, 5088-5097.  [1] H. Z. Liu, S. X. Zheng, K. M. Nie, Macromolecules 2005, 38, 5088-5097.
[2]A. F. Luo, X. S. Jiang, H. Lin, J. Yin, J. Mater. Chem. , 2011 , D0I : 10. 1039/cljral l425e.  [2] A. F. Luo, X. S. Jiang, H. Lin, J. Yin, J. Mater. Chem. , 2011 , D0I : 10. 1039/cljral l425e.
步骤 (2 ) : 将上述所制得的含巯基的低倍多聚硅氧烷化合物 (POSS-SH)与含 双键单体、 光引发剂依次加入在带有磁力搅拌器的密闭试剂瓶中, 然后加入少量二 氯甲烷溶剂进行溶解, 室温下经紫外光照搅拌反应, 待反应结束后, 将反应所得澄 清溶液用正己烷进行沉降, 静置一段时间后, 滤去上层清液, 得到液态粘稠状沉降 物。 将该液态粘稠状沉降物用少量二氯甲垸溶解, 再加入过量正己烷进行产物沉 降, 反复三次后, 将最终所得液态粘稠状沉降物旋转蒸法, 蒸干溶剂得到通式(1) 化合物的纯化产物。  Step (2): sequentially adding the thiol-containing low-polysiloxane compound (POSS-SH) prepared above with a double bond-containing monomer and a photoinitiator to a closed reagent bottle with a magnetic stirrer Then, a small amount of dichloromethane solvent is added to dissolve, and the reaction is stirred under ultraviolet light at room temperature. After the reaction is completed, the clear solution obtained by the reaction is sedimented with n-hexane, and after standing for a while, the supernatant liquid is filtered off to obtain a liquid viscosity. Thick sediment. The liquid viscous sediment is dissolved with a small amount of methylene chloride, and the excess hexane is added to carry out product sedimentation. After repeated three times, the finally obtained liquid viscous sediment is subjected to rotary evaporation, and the solvent is evaporated to obtain a general formula (1). a purified product of the compound.
该步骤所用的溶剂还可以是二氯甲烷, 氯仿, 四氢呋喃, 甲苯其中的一种或 者混合物。 优选二氯甲垸, 氯仿。  The solvent used in this step may also be one or a mixture of dichloromethane, chloroform, tetrahydrofuran, and toluene. Preferred is dichloromethane, chloroform.
所述的含双键单体选自无取代或者被取代基取代的 c3-c15烯烃、 无取代或者 被取代基取代的 c3-c15乙烯基醚、 无取代或者被取代基取代的 c3-c2。 (甲基) 丙烯 酸酯类化合物。 所述的取代基为氟、 氯、 溴、 碘原子或者硅原子, 优选氟原子。 The double bond-containing monomer is selected from a C 3 -c 15 olefin which is unsubstituted or substituted by a substituent, a C 3 -c 15 vinyl ether which is unsubstituted or substituted by a substituent, is unsubstituted or substituted by a substituent. c 3 -c 2 . (Methyl) acrylate compound. The substituent is a fluorine, chlorine, bromine, iodine atom or a silicon atom, preferably a fluorine atom.
所述的无取代或者被取代基取代的 C3- C15烯烃, 优选为 1H, 1H, 2H-全氟 -1-癸 烯, 1H, 1H, 2H-全氟 -1-己烯, 苯乙烯, 对甲基苯乙烯或 2, 3, 4, 5, 6-五氟苯乙烯。 The unsubstituted or substituted C 3 -C 15 olefin, preferably 1H, 1H, 2H-perfluoro-1-decene, 1H, 1H, 2H-perfluoro-1-hexene, styrene , p-methylstyrene or 2, 3, 4, 5, 6-pentafluorostyrene.
所述的无取代或者被取代基取代的 C3-C15乙烯基醚, 优选 2, 2, 2-三氟乙基乙 烯醚, 2-全氟丙氧基全氟丙基三氟乙烯基醚。 所述的无取代或者被取代基取代的 c3- c2。 (甲基) 丙烯酸酯类化合物, 优选The unsubstituted or substituted C 3 -C 15 vinyl ether, preferably 2, 2, 2-trifluoroethyl vinyl ether, 2-perfluoropropoxy perfluoropropyl trifluorovinyl ether . The unsubstituted or substituted c 3 - c 2 . (meth) acrylate compound, preferred
1H, 1H, 2H, 2H-全氟癸醇丙烯酸酯, 1H, 1H, 2H, 2H -全氟辛醇丙烯酸酯或 1H, 1H, 7H-十 二氟庚基甲基丙烯酸酯。 . 1H, 1H, 2H, 2H-perfluorononanol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate or 1H, 1H, 7H-decafluoroheptyl methacrylate. .
所述的含双键单体更好是苯乙烯, 1H,1H, 2H-全氟- 1-癸烯, 1H, 1H, 2H, 2H-全 氟辛醇丙烯酸酯或 1H, 1H, 7H-十二氟庚基甲基丙烯酸酯。  The double bond-containing monomer is preferably styrene, 1H, 1H, 2H-perfluoro-1-nonene, 1H, 1H, 2H, 2H-perfluorooctyl acrylate or 1H, 1H, 7H-ten Difluoroheptyl methacrylate.
所述的光引发剂选自夺氢型或裂解型自由基光引发剂: 1-羟基环己基苯基 酮、 二苯甲酮、 异丙基硫杂蒽酮 (简称: ITX) 、 2 , 4, 6-三甲基二苯甲酮、 a -羟 垸基苯酮、 苄基二甲醛缩苯乙酮或 α -胺烷基苯酮 (简称 .· 1-907 ) 中的一种或其组 合, 优选为 α -胺垸基苯酮和异丙基硫杂蒽酮的组合。  The photoinitiator is selected from a hydrogen abstraction type or a cleavage type free radical photoinitiator: 1-hydroxycyclohexyl phenyl ketone, benzophenone, isopropyl thioxanthone (abbreviation: ITX), 2, 4 , one or a combination of 6-trimethylbenzophenone, a-hydroxydecyl benzophenone, benzyl diformaldehyde acetophenone or α-aminoalkyl benzophenone (abbreviation . 1-907) It is preferably a combination of α-aminomercaptophenone and isopropyl thioxanthone.
所述的光引发剂的质量浓度范围为: 0. 3-3 % ;  The mass concentration range of the photoinitiator is: 0. 3-3 %;
所述的紫外光照的时间范围: 4-24小时;  The time range of the ultraviolet light is: 4-24 hours;
所述的紫外波段: 300- 400nm; The ultraviolet band: 300-400 nm ;
所述的化合物 P0SS-SH与所述的含双键单体的含量摩尔比为: 1 : 1-1 : 8。 本发明第二发明是提供一种紫外光刻胶组合物, 该组合物包含上述通式(1) 的化合物和通式(2)的化合物,  The molar ratio of the compound P0SS-SH to the content of the double bond-containing monomer is: 1: 1-1: 8. A second invention of the present invention provides an ultraviolet resist composition comprising the compound of the above formula (1) and the compound of the formula (2),
CHRfCR^ (2)  CHRfCR^ (2)
通式 (2)中的 、 和 分别为氢原子、 d- C2Q浣基、 d-C2。垸氧基、 C6- C2。芳香 基、 d- C2。酯基、 C3-C2。环垸基、 C3-C2Q酰亚胺类基团, 所述通式 (2)可以被卤素原子或 者硅原子取代。 所述通式 (2)的化合物为选自 C3-C15烯烃、 C3- C15乙烯基醚、 C3-C15乙烯基酰 胺, C3-C2。 (甲基) 丙烯酸酯, 所述取代基为氟原子或者硅原子。 所述 3-( 15烯烃选自 1-丁烯、 1-己烯、 1-庚烯、 全氟己烯、 全氟庚烯或者偏氟 庚烯; 所述 C3- C15乙烯基醚选自乙烯基乙醚、 乙烯基丁醚、 乙烯基己二醇醚, 2,2,2- 三氟乙基乙烯醚或者 2-全氟丙氧基全氟丙基三氟乙烯基醚; 所述 C3- C2。 (甲基) 丙烯 酸酯选自丁烯酸酯、 甲基丙烯酸苄酯、 苯氧基乙二醇丙烯酸酯、 1H, 1H, 2H, 2H-全氟辛 醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸醇丙烯酸酯或者 1H, 1H, 7H-十二氟庚基甲基丙烯酸 酯。 所述的紫外光刻胶组合物中的所述通式(2)的化合物是甲基丙烯酸苄酯, 1H, 1H,2H, 2H-全氟辛醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸醇丙烯酸酯。 And in the formula (2) are a hydrogen atom, d-C 2Q fluorenyl group, and dC 2 , respectively . Alkoxy, C 6 - C 2 . Aromatic group, d-C 2 . Ester group, C 3 -C 2 . a cyclodecyl group, a C 3 -C 2Q imide group, and the formula (2) may be substituted by a halogen atom or a silicon atom. The compound of the formula (2) is selected from the group consisting of C 3 -C 15 olefins, C 3 -C 15 vinyl ethers, C 3 -C 15 vinyl amides, C 3 -C 2 . (Meth) acrylate, the substituent being a fluorine atom or a silicon atom. The 3- ( 15 olefin) is selected from 1-butene, 1-hexene, 1-heptene, perfluorohexene, perfluoroheptene or PFH; the C 3 - C 15 vinyl ether is selected From vinyl ethyl ether, vinyl butyl ether, vinyl hexane glycol ether, 2, 2, 2-trifluoroethyl vinyl ether or 2-perfluoropropoxy perfluoropropyl trifluorovinyl ether; 3 - C 2 (meth) acrylate selected from crotonate, benzyl methacrylate, phenoxyethylene glycol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H-perfluorononanol acrylate or 1H, 1H, 7H-dodecafluoroheptyl methacrylate. The compound of the formula (2) in the ultraviolet photoresist composition is Benzyl methacrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H-perfluorononanol acrylate.
所述的紫外光刻胶组合物中还含有交联剂和光引发剂。  The ultraviolet photoresist composition further contains a crosslinking agent and a photoinitiator.
所述的紫外光刻胶组合物中的所述交联剂选自官能团不少于两个的双键的 The crosslinking agent in the ultraviolet photoresist composition is selected from a double bond having a functional group of not less than two
C3-C15烯烃, C3- C2。丙烯酸酯及 C3-C2。甲基丙烯酸酯类化合物, 必要时所述交联剂可 以有多个杂原子取代基, 如卤素原子或者硅原子。 优选氟原子或者硅原子。 C 3 -C 15 olefin, C 3 - C 2 . Acrylate and C 3 -C 2 . The methacrylate compound may have a plurality of hetero atom substituents such as a halogen atom or a silicon atom, if necessary. A fluorine atom or a silicon atom is preferred.
所述的紫外光刻胶组合物中的所述交联剂选自 1, 4-丁二烯、 2,5-二甲基- 1, 5-己二烯 -3-醇、 全氟己二烯、 1,3-二乙烯 - 1,1, 3, 3-四甲基二硅氧垸、 新戊二醇二 丙烯酸酯、 1, 6-己二醇二丙烯酸酯、 二丙二醇二丙烯酸酯、 1, 6-二(丙烯酰氧基) - 2, 2, 3, 3, 4, 4, 5, 5-八氟己垸、 1, 5-二(丙烯酰氧基 ) -2, 2, 3, 3, 4, 4-六氟戊垸、 三羟甲 基丙垸三甲基丙烯酸酯, 三羟甲基丙垸三丙烯酸酯 (TMPTA)。 较好为 1, 3-二乙烯- 1,1, 3, 3-四甲基二硅氧烷, 三羟甲基丙垸三丙烯酸酯或者 1, 6-二(丙烯酰氧基) - 2, 2, 3, 3, 4, 4, 5, 5-八氟己烷。  The crosslinking agent in the ultraviolet photoresist composition is selected from the group consisting of 1, 4-butadiene, 2,5-dimethyl-1, 5-hexadien-3-ol, and perfluorohexane Alkene, 1,3-diethylene-1,1,3,3-tetramethyldisiloxane, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, dipropylene glycol diacrylate, 1,6-bis(acryloyloxy)-2,2,3,3,4,4,5,5-octafluorohexanyl, 1,5-bis(acryloyloxy)-2, 2, 3 , 3, 4, 4-hexafluoropentafluorene, trishydroxymethylpropionate trimethacrylate, trimethylolpropane triacrylate (TMPTA). Preferred is 1, 3-diethylene-1,1,3,3-tetramethyldisiloxane, trimethylolpropane triacrylate or 1,6-bis(acryloyloxy)-2. 2, 3, 3, 4, 4, 5, 5-octafluorohexane.
所述的光引发剂为夺氢型或裂解型自由基光引发剂选自 1-羟基环己基苯基 酮、 二苯甲酮、 异丙基硫杂蒽酮 (ITX ) 、 2 , 4, 6-三甲基二苯甲酮、 α -羟烷基苯 酮、 苄基二甲醛缩苯乙酮或 ct -胺垸基苯酮(1-907)中的一种或其组合, 优选为 α - 胺垸基苯酮(1-907)。  The photoinitiator is a hydrogen abstraction type or a cleavage type free radical photoinitiator selected from the group consisting of 1-hydroxycyclohexyl phenyl ketone, benzophenone, isopropyl thioxanthone (ITX), 2, 4, 6 Or one or a combination of trimethyl benzophenone, α-hydroxyalkylphenone, benzyl diformaldehyde acetophenone or ct-amine decyl ketone (1-907), preferably α - Amino benzophenone (1-907).
根据需要还可以使用适当的辅助剂。  Appropriate adjuvants can also be used as needed.
所述的紫外光刻胶组合物中的各个成分的含量为: 以质量%计, 所述的通式 (1)化合物为 5〜65质量%, 所述的通式(2)的化合物为 10〜60质量%, 交联剂为 5〜45质量%, 光引发剂为 0. 3〜3质量%, 各组分的质量之和为 100。  The content of each component in the ultraviolet photoresist composition is: in terms of mass%, the compound of the formula (1) is 5 to 65% by mass, and the compound of the formula (2) is 10 The sum of the mass of each component is 100. The mass of the photoinitiator is 0.3 to 3 mass%, and the sum of the masses of the components is 100.
所述的紫外光刻胶组合物中的各个成分的较好的含量为: 以质量%计, 所述 的通式(1)化合物为 19〜50质量%, 所述的通式(2)的化合物为 10〜50质量%, 交 联剂为 10〜60质量%, 光引发剂为 0. 3〜1质量%, 各组分的质量之和为 100。  The content of each component in the ultraviolet photoresist composition is: in terms of mass%, the compound of the formula (1) is 19 to 50% by mass, and the formula (2) The compound is 10 to 50% by mass, the crosslinking agent is 10 to 60% by mass, the photoinitiator is 0.3 to 1% by mass, and the sum of the masses of the components is 100.
上述紫外光刻胶组合物的制备方法是通过依次将通式化合物(1)、 通式化合 物 (2)、 交联剂、 光引发剂以及所需的辅助剂配料后加入带有磁力搅拌器的密闭试 剂瓶中, 搅拌混合均匀, 用无水氯仿稀释后使用过滤器进行微滤制成紫外光刻胶组 合物, 并将其避光低温冷冻保存, 以备用。  The above ultraviolet photoresist composition is prepared by sequentially adding a compound of the formula (1), a compound of the formula (2), a crosslinking agent, a photoinitiator and a desired auxiliary agent to a magnetic stirrer. In a sealed reagent bottle, stir and mix well, dilute with anhydrous chloroform, and then use a filter to micro-filter to prepare an ultraviolet photoresist composition, and store it in the dark at low temperature for use.
所述的以无水氯仿对组合物的稀释的质量浓度范围为: 5-20 % ;  The diluted mass concentration of the composition with anhydrous chloroform is: 5-20%;
所述的紫外光刻胶组合物无溶剂稀释时, 在常温 15〜30Ό下为澄清、 透明的 液态。 本发明还涉及一种软模板及其制造方法, 该制造方法如图 2 (A)—(C)所示:The ultraviolet photoresist composition is clarified and transparent at a normal temperature of 15 to 30 稀释 when solvent-free dilution. Liquid. The invention also relates to a soft template and a method of manufacturing the same, which is illustrated in Figures 2(A)-(C):
(A) .在修饰过的石英片 3表面旋涂本发明的压印紫外光刻胶 2。 所述的旋涂 是指: 以 300rpm旋转涂膜 10秒后, 再以 3000rpm旋转涂膜 20秒, 得到的膜厚为 750± 5nm。 (A). The imprinted UV photoresist 2 of the present invention is spin-coated on the surface of the modified quartz plate 3. The spin coating means that the film was rotated at 300 rpm for 10 seconds, and then the film was rotated at 3000 rpm for 20 seconds to obtain a film thickness of 750 ± 5 nm.
(B) .将带有紫外光刻胶 2的石英片 3, 与石英模板 1进行接触, 放入压印机 中。 加压条件下, 将石英模板 1的纳米图案复制于压印光刻胶 2上, 紫外曝光固 化。  (B) The quartz piece 3 with the ultraviolet photoresist 2 was brought into contact with the quartz template 1 and placed in an imprinting machine. The nanopattern of the quartz template 1 was copied onto the imprinted photoresist 2 under pressure and cured by ultraviolet exposure.
(C) .将固化后的带有石英模板 1的纳米图案的石英片 3与石英模板 1脱离 (即: 脱模) , 可得到固化后带有图形的软模板 4。 然后再将带有软模板 4的石英 片 3, 在 10CTC下继续老化 3小时, 老化后作为压印软模板(是软模板 4和石英片 3 的组合)使用。 本发明还涉及一种软模板压印光刻胶的工艺, 如图 2 (D)—(F)所示:  (C). The cured quartz plate 3 with the nanopattern of the quartz template 1 is separated from the quartz template 1 (i.e., demolded) to obtain a soft template 4 having a pattern after curing. Then, the quartz piece 3 with the soft template 4 was further aged at 10 CTC for 3 hours, and used as an imprinted soft template (a combination of the soft template 4 and the quartz plate 3) after aging. The invention also relates to a process for soft stencil imprinting photoresist, as shown in Figures 2(D)-(F):
(D) .在修饰过的硅衬底 6上旋涂现有的商业光刻胶 5, 所述的旋涂是指: 以 300rpm旋转涂膜 10秒后, 再以 5000rpm旋转涂膜 20秒, 得到的膜厚为 500士 5nm。  (D). Spin-coating the existing commercial photoresist 5 on the modified silicon substrate 6, which is: rotating the film at 300 rpm for 10 seconds, and then rotating the film at 5000 rpm for 20 seconds. The film thickness obtained was 500 ± 5 nm.
(E) .将上述制得的带有软模板 4图形的石英片 3, 如图 2 (D)所示那样, 以软 模板 4面向商业光刻胶 5的状态, 将软模板 4盖在商业光刻胶 5上, 连同硅衬底 6 一起放入压印机中。 将软模板 4的纳米图案复制于商业光刻胶 5上, 紫外曝光固 化。 .  (E). The quartz plate 3 with the soft template 4 pattern prepared as described above is covered with the soft template 4 in the state of the commercial photoresist 5 as shown in Fig. 2(D). The photoresist 5 is placed in the stamping machine together with the silicon substrate 6. The nanopattern of the soft template 4 was reproduced on a commercial photoresist 5 and cured by ultraviolet exposure. .
(F) .将带有软模板 4图形的石英片 3与带有 7的硅衬底 6脱离, 得到带有图 形的商业胶固化膜 7, 这就是软模板压印光刻胶的工艺。 粘度:  (F). The quartz plate 3 with the soft template 4 pattern is detached from the silicon substrate 6 with 7 to obtain a commercial cured film 7 with a pattern, which is a process of soft stencil imprinting of the photoresist. Viscosity:
紫外光刻胶组合物粘度由微量奥氏粘度仪在 25°C下, 通过液体样品与水的流 水时间, 样品密度以及水的粘度计算得出, 具体计算公式如下所示: Pi U The viscosity of the UV photoresist composition is calculated by a trace Oswald viscometer at 25 ° C, by the flow time of the liquid sample and water, the sample density and the viscosity of the water. The specific calculation formula is as follows: Pi U
no Po k  No Po k
其中, P i和 P。分别为紫外光刻胶密度和水的密度,
Figure imgf000015_0001
t。分别为样品和水 流过相同体积所需的时间, 若已知某温度下参比液体 0的粘度为 :!。和 P Q, 并测 得 P i, to, ti即可求得该温度下的样品的粘度。 '
Among them, P i and P. For UV photoresist density and water density,
Figure imgf000015_0001
t. The time required for the sample and water to flow through the same volume, respectively, if the viscosity of the reference liquid 0 is known to be at a certain temperature:! . And P Q , and measured P i, to, ti can determine the viscosity of the sample at this temperature. '
杨氏模量和硬度:  Young's modulus and hardness:
固化后所形成的聚合物膜杨氏模量和硬度,通过原位纳米力学测试系统 (Hysitron TI- 900 Tribolndenter; USA)在室温下测得, 取最低值。  The Young's modulus and hardness of the polymer film formed after curing were measured by an in situ nanomechanical test system (Hysitron TI-900 Tribolndenter; USA) at room temperature, taking the lowest value.
静态水接触角:  Static water contact angle:
固化后所形成的聚合物膜的静态水接触角是通过表面角接触仪  The static water contact angle of the polymer film formed after curing is through the surface angle contactor
( SL200B ; USA) 测量而得到的。  (SL200B; USA) obtained by measurement.
表面能:  Surface energy:
固化后所形成的聚合物膜的表面能可通过如下文献 3所记载的方法进行测 定, 即通过表面角接触仪 (SL200B ; USA) , 分别选用三种不同溶剂, 测出其接触 角, 在通过杨氏方程算出材料表面能 [4]The surface energy of the polymer film formed after curing can be measured by the method described in the following Document 3, that is, by using a surface angular contact meter (SL200B; USA), three different solvents are selected, and the contact angle is measured, and the pass angle is measured. The Young's equation calculates the surface energy of the material [4] .
[3] 王晖, 顾帼华, 邱冠周, 接触角法测量高分子材料的表面能. 中南大学 学报(自然科学版), 2006, 5, 942-947. 实施例  [3] Wang Hui, Gu Yuhua, Qiu Guanzhou, Measurement of surface energy of polymer materials by contact angle method. Journal of Central South University (Natural Science Edition), 2006, 5, 942-947.
下面结合附图对本方法做进一步具体说明。  The method will be further described in detail below with reference to the accompanying drawings.
以下的实施例和比较例是对本发明的进一步说明, 而不是限制本发明的范 围。  The following examples and comparative examples are illustrative of the invention and are not intended to limit the scope of the invention.
化合物的实施例:  Examples of compounds:
实施例 1 含巯基的低倍多聚硅氧烷化合物(P0SS-SH) 的制备  Example 1 Preparation of a fluorenyl-containing low polypolysiloxane compound (P0SS-SH)
取 15. 0ml ( 3-巯基丙基) 三甲氧基硅烷 (TPS ) , 30ml浓盐酸(37%的质量浓 度)于带有磁力搅拌器的单口烧瓶中, 量取 350ml甲醇溶剂进行溶解。 混合物在 90°C搅拌回流反应 24小时, 静置, 滤去上层清液, 得到乳白色产物, 将该乳白色 产物用二氯甲垸溶解后, 再加入过量甲醇沉降产物, 反复三次后, 旋转蒸法, 蒸干 溶剂得到纯化产物含巯基的低倍多聚硅氧垸化合物 (简称为 P0SS- SH) (请见图 1 (a) ) o 15.0 ml (3-mercaptopropyl)trimethoxysilane (TPS), 30 ml of concentrated hydrochloric acid (37% by mass) were placed in a one-necked flask equipped with a magnetic stirrer, and 350 ml of a methanol solvent was weighed and dissolved. The mixture was stirred and refluxed at 90 ° C for 24 hours, allowed to stand, and the supernatant liquid was filtered off to obtain a milky white product. The milky white product was dissolved in dichloromethane, and then excess methanol was added to precipitate the product, and after repeated three times, rotary distillation was carried out. Evaporating the solvent to obtain a purified product containing a fluorenyl-based low-poly polysiloxane compound (referred to as P0SS-SH) (please see 1 (a) ) o
实施例 2 嫁接 1H, 1H, 2H, 2H-全氟辛基丙烯酸酯后所形成的笼型八聚( Y -巯 基丙基)硅倍半氧烷 (简称 POSS- SCFA6-SH) 的制备 Example 2 Preparation of cage octa((Y-mercaptopropyl)silsesquioxane (POSS-SCFA 6 -SH for short) formed after grafting 1H, 1H, 2H, 2H-perfluorooctyl acrylate
将实施例 1所制得的 POSS- SH以及 1H, 1H, 2H, 2H-全氟辛醇丙烯酸酯(简称 CFA6)依次加入带有磁力搅拌器的密闭试剂瓶的二氯甲烷中, 其中 P0SS-SH与 CFA6 的摩尔比为 1 : 4, 引发剂 1-907占整个反应体系总质量的 5%。, 在 365nm的紫外灯 下光照搅拌反应 6小时, 加入过量的正己烷使其沉降, 静置后, 滤去上层清液, 将 所得透明的产物用二氯甲垸溶解, 再加入过量正己垸沉淀析出, 反复三次后, 旋转 蒸法蒸干溶剂得到纯化产物笼型八聚(Y -巯基丙基)硅倍半氧垸 (P0SS-SCFA6-SH ) (请见图 1 (b) )。 POSS-SH and 1H, 1H, 2H, 2H-perfluorooctyl acrylate (CFA 6 ) prepared in Example 1 were sequentially added to dichloromethane in a closed reagent bottle with a magnetic stirrer, wherein P0SS The molar ratio of -SH to CFA 6 is 1:4, and the initiator 1-907 accounts for 5% of the total mass of the entire reaction system. The reaction was stirred under a UV light of 365 nm for 6 hours, and an excess of n-hexane was added to precipitate. After standing, the supernatant was filtered off, and the resulting transparent product was dissolved in dichloromethane, and an excess of hexamethylene precipitate was added. After the reaction was repeated three times, the solvent was evaporated to dryness by rotary evaporation to obtain a purified product of octadecyl (Y-mercaptopropyl)silsesquioxane (P0SS-SCFA 6 -SH ) (see Fig. 1 (b)).
实施例 3 嫁接 1H, 1H, 7H-十二氟庚基甲基丙烯酸酯后所形成的笼型八聚(γ - 巯基丙基)硅倍半氧烷 (简称 POSS- SDCFA6- SH) 制备 Example 3 Preparation of caged octameric (γ-mercaptopropyl)silsesquioxane (POSS-SDCFA 6 - SH) formed by grafting 1H, 1H, 7H-dodecafluoroheptyl methacrylate
在带有磁力搅拌器的密封试剂瓶中, 将实施例 1所制得的 P0SS - SH,  In the sealed reagent bottle with a magnetic stirrer, the P0SS-SH obtained in Example 1 was
1H, 1H, 7H-十二氟庚基甲基丙烯酸酯(简称 DCFA6), 依次加入试剂瓶中的二氯甲垸 中, 其中 P0SS-SH与 DCFA6的摩尔比为 1 : 4, 引发剂 1-907和 ITX占整个体系质量 的 5%。, 在 365nm的紫外灯下光照搅拌反应 6小时, 加入正己烷使其沉降, 静置 后, 滤去上层清液, 将所得透明的产物用二氯甲垸溶解, 再加入过量正己垸使其沉 降, 反复三次后, 旋转蒸法蒸干溶剂得到纯化产物 P0SS-SDCFA6-SH (请见图 l (c) )。 1H, 1H, 7H-dodecafluoroheptyl methacrylate (DCFA 6 for short), added to the dichloromethane in the reagent bottle, wherein the molar ratio of P0SS-SH to DCFA 6 is 1: 4, initiator 1-907 and ITX account for 5% of the total system quality. The reaction was stirred under a UV light of 365 nm for 6 hours, and then added with n-hexane to precipitate. After standing, the supernatant was filtered off, and the obtained transparent product was dissolved with methylene chloride, and an excess of hexamethylene was added thereto to cause sedimentation. After repeated three times, the solvent was evaporated to dryness by rotary evaporation to obtain purified product P0SS-SDCFA 6 -SH (see Fig. 1 (c)).
实施例 4 嫁接苯乙烯后所形成的笼型八聚(Y -巯基丙基)硅倍半氧烷 (简称 P0SS-SS-SH) 制备  Example 4 Preparation of caged octameric (Y-mercaptopropyl)silsesquioxane (referred to as P0SS-SS-SH) formed after grafting styrene
在带有磁力搅拌器的密封的试剂瓶中, 将实施例 1所制得的 POSS- SH, 笨乙 烯, 依次加入试剂瓶中的二氯甲垸中, 其中 POSS- SH与苯乙烯的摩尔比为 1 : 4, 引发剂 1-907和 ITX占整个体系质量的 5%。, 在 365nm的紫外灯下光照搅拌反应 12 小时, 加入正己垸沉降, 滤去上层清液, 反复三次后, 旋转蒸法蒸干溶剂得到产物 POSS- SS- SH (请见图 1 (d) )。  In a sealed reagent bottle with a magnetic stirrer, the POSS-SH, stupid ethylene obtained in Example 1 was sequentially added to the methylene chloride in the reagent bottle, wherein the molar ratio of POSS-SH to styrene was For 1:4, the initiator 1-907 and ITX account for 5% of the total mass of the system. The reaction was stirred under a UV light of 365 nm for 12 hours, and the precipitate was added to n-hexane. The supernatant was filtered off. After repeated three times, the solvent was evaporated to dryness to give the product POSS-SS-SH (see Figure 1 (d)). .
实施例 5 嫁接 1H, 1H, 2H-全氟- 1-癸烯后所形成的笼型八聚(Y -巯基丙基)硅 倍半氧垸 (简称 POSS- SPFDE8-SH) 制备 Example 5 Preparation of caged octameric (Y-mercaptopropyl)silsesquioxane (POSS-SPFDE 8 -SH) formed by grafting 1H, 1H, 2H-perfluoro-1-nonene
在带有磁力搅拌器的密封的试剂瓶中, 将实施例 1所制得的 P0SS-SH, 1H,1H,2H-全氟 -1 -癸烯(简称 PFDE8), 依次加入试剂瓶中的二氯甲烷中, 其中 P0SS-SH与 PFDE8的摩尔比为 1: 4, 引发剂 1-907和 IT 占整个体系质量的 5%, 在 365nm的紫外灯下光照反应 6小时, 加入正己垸沉降, 滤去上层清液, 反复三次 后, 旋转蒸法蒸干溶剂得到产物 P0SS-SPFDE8- SH (请见图 1 (e) )。 In the sealed reagent bottle with a magnetic stirrer, the P0SS-SH obtained in Example 1 was 1H,1H,2H-perfluoro-1-pyrene (PFDE 8 for short), added to the dichloromethane in the reagent bottle, wherein the molar ratio of P0SS-SH to PFDE 8 is 1:4, initiator 1-907 And IT accounted for 5% of the total system quality, and the light was reacted for 6 hours under a 365 nm UV lamp. After adding hexamidine, the supernatant was filtered off. After repeated three times, the solvent was evaporated to dryness to obtain the product P0SS-SPFDE 8 - SH. (See Figure 1 (e)).
组合物的实施例:  Examples of compositions:
实施例 6 用于压印的软模板制备的紫外光刻胶组合物 JTHC-B-1  Example 6 Ultraviolet photoresist composition for imprinting soft template preparation JTHC-B-1
分别称取实施例 2的 POSS- SCFA6- SH 0. 30g, 1H, 1H, 2H, 2H-全氟辛基丙烯酸 (CFAs) 0. 40g, 1,6-二(丙烯酰氧基)- 2,2, 3,3,4, 4,5, 5-八氟己垸 0. 30g, 光引 发剂 1-907 0. 005g, 并将其逐一加入到试剂瓶中, 搅拌混合均勾。 使用 0. 25微米 的过滤器对所制得的混合物进行微滤, 将所得的过滤物的紫外光刻胶组合物用无水 氯仿稀释至质量浓度 20%, 避光冷冻保存以备用。 The POSS-SCFA 6 - SH 0. 30g, 1H, 1H, 2H, 2H-perfluorooctyl acrylate (CFAs) of Example 2 was weighed out. 40g, 1,6-bis(acryloyloxy)-2 , 2, 3, 3, 4, 4, 5, 5-octafluorohexanide 0. 30g, photoinitiator 1-907 0. 005g, and added to the reagent bottle one by one, stir and mix. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
实施例 7 用于压印的软模板制备的紫外光刻胶组合物 JTHC- B-2  Example 7 Ultraviolet photoresist composition for imprinting soft template preparation JTHC-B-2
分别称取 POSS- SCFA6-SH 0. 30g, 1H, 1H, 2H, 2H-全氟辛基丙烯酸酯 (CFA6) 0. 10g, 1,6-二(丙烯酰氧基)- 2, 2,3,3, 4, 4,5, 5-八氟己垸 0. 60g, 光引发剂 1-907 0. 003g, 逐一加入到试剂瓶中, 搅拌混合均匀。 使用 0. 25微米的过滤器对所制得 的混合物进行微滤, 将所得的过滤物的紫外光刻胶组合物用无水氯仿稀释至质量浓 度 20%, 避光冷冻保存以备用。 Weigh POST-SCFA 6 -SH 0. 30g, 1H, 1H, 2H, 2H-perfluorooctyl acrylate (CFA 6 ) 0. 10g, 1,6-bis(acryloyloxy)-2, 2 , 3,3, 4, 4,5, 5-octafluorohexanide 0. 60g, photoinitiator 1-907 0. 003g, one by one, added to the reagent bottle, stirred and mixed evenly. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
实施例 8用于压印的软模板制备的紫外光刻胶组合物 JTHC- B - 3  Example 8 Ultraviolet photoresist composition for imprinting soft template preparation JTHC-B-3
分别称取 P0SS-SCFA6- SH 0. 5g, 甲基丙烯酸苄酯(BMA)单体 0. 3g, 交联剂三 羟甲基丙烷三甲基丙烯酸酯 ( TMPT ) 0. 2g, 光引发剂 1-907 0. 010g, 逐一加入到 试剂瓶中, 搅拌混合均匀。 使用 0. 25微米的过滤器对所制得的混合物进行微滤, 将所得的过滤物的紫外光刻胶组合物用无水氯仿稀释至质量浓度 20%, 避光冷冻保 存以备用。 2克, Photoinitiator, P0SS-SCFA 6 - SH 0. 5g, benzyl methacrylate (BMA) monomer 0. 3g, crosslinker trimethylolpropane trimethacrylate (TMPT) 0. 2g, photoinitiator 1-907 0. 010g, added to the reagent bottle one by one, stir and mix well. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
实施例 9 用于压印的软模板制备的紫外光刻胶组合物 JTHC- B-4  Example 9 Ultraviolet photoresist composition for imprinting soft template preparation JTHC-B-4
分别称取 POSS- SDCFA6- SH 0. 50g, 单体乙烯基丁醚 0. 40g, 交联剂 1, 6 -二 (丙烯酰氧基)-2, 2, 3, 3, 4, 4, 5, 5-八氟己烷 0. 10g, 光引发剂 1-907 0. 010g, 逐一 加入到试剂瓶中, 搅拌混合均匀。 使用 0. 25微米的过滤器对所制得的混合物进行 微滤, 将所得的过滤物的紫外光刻胶组合物用无水氯仿稀释至质量浓度 20%, 避光 冷冻保存以备用。 实施例 10 用于压印的软模板制备的紫外光刻胶组合物 JTHC- B-5 分别称取 POSS- SS- SH 0. 5g, 1H, 1H,2H,2H-全氟癸醇丙烯酸酯(CFA8)单体 0. 3g, 交联剂 1,3-二乙烯 - 1, 1,3,3-四甲基二硅氧垸 0. 2g, 光引发剂 1-907 0. 005g, 逐一加入到试剂瓶中, 搅拌混合均匀。 使用 0. 25微米的过滤器对所制得 的混合物进行微滤, 将所得的过滤物的紫外光刻胶组合物用无水氯仿稀释至质量浓 度 20%, 避光冷冻保存以备用。 Weigh POST-SDCFA 6 - SH 0. 50g, monomer vinyl butyl ether 0. 40g, crosslinker 1, 6 - bis(acryloyloxy)-2, 2, 3, 3, 4, 4, 5, 5-octafluorohexane 0. 10g, photoinitiator 1-907 0. 010g, one by one, added to the reagent bottle, stirred and mixed evenly. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage. Example 10 Ultra-violet photoresist composition JTHC-B-5 for embossing was weighed POSS-SS-SH 0. 5g, 1H, 1H, 2H, 2H-perfluorononanol acrylate ( Cg 8 ) monomer 0. 3g, cross-linking agent 1,3-diethylene-1, 1,3,3-tetramethyldisiloxane oxime 0. 2g, photoinitiator 1-907 0. 005g, one by one Into the reagent bottle, stir and mix well. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage.
实施例 11 用于压印的软模板制备的紫外光刻胶组合物 JTHC-B - 6  Example 11 Ultraviolet photoresist composition for imprinting soft template preparation JTHC-B - 6
分别称取 POSS- SPFDE8- SH 0. 2g, 1H, 1H, 2H, 2H-全氟癸醇丙烯酸酯 (CFA8)单 体 0. 5g, 交联剂 1, 6-二(丙烯酰氧基 ) -2, 2, 3, 3, 4, 4, 5, 5-八氟己垸 0. 3g, 光引发 剂 1-907 0. 005g , 逐一加入到试剂瓶中, 搅拌混合均匀。 使用 0. 25微米的过滤器 对所制得的混合物进行微滤, 将所得的过滤物的紫外光刻胶组合物用无水氯仿稀释 至质量浓度 20%, 避光冷冻保存以备用。 改变组合物中组分的比较例: 5克, Crosslinker 1,6-bis(acryloyloxy), respectively, weighed POSS-SPFDE8-SH 0. 2g, 1H, 1H, 2H, 2H-perfluorononanol acrylate (CFA 8 ) monomer 0. 5g, crosslinker 1, 6-bis(acryloyloxy) -2, 2, 3, 3, 4, 4, 5, 5-octafluorohexanide 0. 3g, photoinitiator 1-907 0. 005g, one by one, added to the reagent bottle, stirred and mixed evenly. The obtained mixture was subjected to microfiltration using a 0.25 μm filter, and the obtained UV-ray resist composition of the filtrate was diluted with anhydrous chloroform to a mass concentration of 20%, and stored in the dark for storage. A comparative example of changing the composition of the composition:
比较例 1组合物 JTHC- A— 1  Comparative Example 1 Composition JTHC-A-1
分别称取实施例 1所制得的 POSS-SH 0. 3g, 甲基丙烯酸苄酯 0. 5g, 交联剂 三羟甲基丙烷三甲基丙烯酸酯 (TMPT) 0. 2g, 光引发剂 1-907 0. 010g , 逐一加入 到试剂瓶中, 搅拌混合均匀。 称取混合紫外光刻胶组合物 l . Og, 将其用无水氯仿 稀释至质量浓度 5%。 使用 0. 25微米的过滤器对.本发明的光刻胶进行微滤, 避光冷 冻保存, 形成紫外光刻胶组合物 JTHC-A— 1。  5克, Photoinitiator 1 The POSS-SH 0. 3g, benzyl methacrylate 0. 5g, crosslinker trimethylolpropane trimethacrylate (TMPT) 0. 2g, photoinitiator 1 -907 0. 010g , added to the reagent bottle one by one, stir and mix well. The mixed UV photoresist composition was weighed and dried with anhydrous chloroform to a mass concentration of 5%. The photoresist of the present invention was microfiltered using a 0.25 micron filter, and stored in the dark and frozen to form an ultraviolet photoresist composition JTHC-A-1.
比较例 1与本发明的实施列的区别在于, 在该比较例的组合物中无任何含氟 组分。  Comparative Example 1 differs from the embodiment of the present invention in that it does not contain any fluorine-containing component in the composition of this comparative example.
比较例 2组合物 JTHC- A— 2  Comparative Example 2 Composition JTHC-A-2
分别称取实施例 1所制得的 P0SS-SH 0. 3g , 1H, 1H, 2H, 2H-全氟辛醇丙烯酸 酯(简称 CFA6) 0. 4g, 1,6-二(丙烯酰氧基)- 2,2,3,3,4, 4,5, 5-八氟己垸 0. 30g, 光 引发剂 1-907 0. 003g, 逐一加入到试剂瓶中, 搅拌混合均匀, 形成 JTHC-A— 2。 The P0SS-SH 0. 3g, 1H, 1H, 2H, 2H-perfluorooctyl acrylate (CFA 6 ) obtained in Example 1 was weighed separately. 0.4 g, 1,6-bis(acryloyloxy) )- 2,2,3,3,4, 4,5, 5-octafluorohexanide 0. 30g, photoinitiator 1-907 0. 003g, one by one, added to the reagent bottle, stirred and mixed uniformly to form JTHC- A-2.
混合均匀后的体系浑浊、 不透明, 发生相分离现象。  The system after mixing is turbid and opaque, and phase separation occurs.
比较例 2与本发明所提供的实施列的区别在于, 使用了没有嫁接含氟基团的 比较例 3组合物 JTHC- A— 3 Comparative Example 2 differs from the embodiment provided by the present invention in that no grafted fluorine-containing groups are used. Comparative Example 3 Composition JTHC-A-3
分别称取四(3-巯基丙酸)季戊四醇酯 (PTMP) 0. 3g, 甲基丙烯酸苄酯 0. 5g, 交联剂三羟甲基丙烷三甲基丙烯酸酯 (TMPT) 0. 2g, 光引发剂 1-9070. 010g, 逐一 加入到试剂瓶中, 搅拌混合均匀。 称取混合后的组合物 1. 0g, 将其用无水氯仿稀 释至质量浓度 5%。 使用 0. 25微米的过滤器对本发明的光刻胶进行微滤, 避光冷冻 保存, 形成紫外光刻胶组合物 JTHC-A— 3。  4克,光。 Light, tetramethyl (meth) propyl methacrylate (TMPT) 0. 2g, light Initiator 1-9070. 010g, one by one, added to the reagent bottle, stirred and mixed evenly. The mixed composition was weighed to 1. 0 g, which was diluted with anhydrous chloroform to a mass concentration of 5%. The photoresist of the present invention was microfiltered using a 0.25 micron filter and stored in the dark to form an ultraviolet photoresist composition JTHC-A-3.
比较例 3与本发明所提供的实施列 8的区别在于, 用四(3-巯基丙酸)季戊四 醇酯 (PTMP) 替代了 POSS- SCFA6-SH。 Comparative Example 3 differs from the embodiment 8 provided by the present invention in that POSS-SCFA 6 -SH was replaced with tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP).
现有的用作软模板制造的组合物的比较例: 商业胶组合物以及现有文献报道 的硫醇 /烯类紫外光刻胶组合物:  Comparative Examples of Existing Compositions for Use as Soft Formwork Manufacture: Commercial gum compositions and thiol/olefinic UV photoresist compositions reported in the prior art:
比较列 4商业胶美国道康宁 Sylgard 184 (聚二甲基硅氧烷, 简称 PDMS)组 合物  Comparative Column 4 Commercial Gum Dow Corning Sylgard 184 (Polydimethylsiloxane, PDMS for short) composition
道康宁 SYLGARD 184硅橡胶是由液体组分组成的双组分套件产品, 包括基本 组分与固化剂。 基本组分与固化剂按 10 : 1重量比完全混合。 无论厚薄, 混合液将 固化成为具有轫性的透明弹性体, 适用于电子 /电气方面的封装与灌封应用。 目 前, 该组合物经常被用作制备软模板的热固化型硅胶, 是目前用作软模板制造中最 为常用的组合物。  Dow Corning SYLGARD 184 Silicone Rubber is a two component kit consisting of liquid components, including essential components and curing agents. The base component and the curing agent are thoroughly mixed in a weight ratio of 10:1. Regardless of the thickness, the mixture will cure into a flexible, transparent elastomer for electronic/electrical packaging and potting applications. Currently, the composition is often used as a thermosetting silica gel for preparing a soft template, and is currently the most commonly used composition for soft template production.
比较例 5 紫外光刻胶组合物 SB4  Comparative Example 5 Ultraviolet Photoresist Composition SB4
根据如下的文献 4所提供的光刻胶及其相应数据, 即主要成分包括: 四(3- 巯基丙酸)季戊四醇酯 (PTMP) , 四乙二醇二乙烯醚 (W=300 ) , 光引发剂 2, 2 -二 甲氧基 -苯基乙酮(DMPA), 形成 SB4紫外光刻胶。  According to the photoresist provided in the following Document 4 and its corresponding data, the main components include: tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP), tetraethylene glycol divinyl ether (W=300), photoinitiated The agent 2,2-dimethoxy-phenylethanone (DMPA) forms an SB4 ultraviolet photoresist.
[文献 4] L. M. Campos, I. Me inel, R. G. Guino, M. Schierhorn, N. Gupta, G. D. Stucky, C. J. Hawker. Adv. Mater. 2008, 20, 3728- 3733。  [Document 4] L. M. Campos, I. Me inel, R. G. Guino, M. Schierhorn, N. Gupta, G. D. Stucky, C. J. Hawker. Adv. Mater. 2008, 20, 3728-3733.
比较例 6 紫外光刻胶组合物 SB5  Comparative Example 6 Ultraviolet Photoresist Composition SB5
根据如下的文献 4所提供的光刻胶及其相应的数据, 即主要成分包括: 四 (3-巯基丙酸)季戊四醇酯 (PTMP) , 聚乙二醇二丙烯酸酯 (W=700) , 光引发剂 2, 2-二甲氧基 -苯基乙酮, 形成 SB5紫外光刻胶。  According to the photoresist provided in the following Document 4 and its corresponding data, the main components include: tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP), polyethylene glycol diacrylate (W=700), light The initiator 2,2-dimethoxy-phenylethanone forms an SB5 ultraviolet photoresist.
[文献 4] L. M. Campos, I. Me inel, R. G. Guino, M. Schierhorn, N. Gupta, G. D. Stucky, C. J. Hawker. Adv. Mater. 2008, 20, 3728- 3733。 比较例 7 紫外光刻胶组合物 SB6 [Document 4] LM Campos, I. Me inel, RG Guino, M. Schierhorn, N. Gupta, GD Stucky, CJ Hawker. Adv. Mater. 2008, 20, 3728-3733. Comparative Example 7 UV photoresist composition SB6
根据如下的文献 4所提供的光刻胶及其相应的数据, 即主要成分包括: 四 (3 -巯基丙酸)季戊四醇酯 (PTMP ) , 聚乙二醇二丙烯酸酯 (W=700) , 光引发剂 2, 2 -二甲氧基 -苯基乙酮, 形成 SB6紫外光刻胶。  According to the photoresist provided in the following document 4 and its corresponding data, the main components include: tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP), polyethylene glycol diacrylate (W=700), light The initiator 2,2-dimethoxy-phenylethanone forms an SB6 ultraviolet photoresist.
[文献 4] L. M. Campos, I . Me ine l , R. G. Guino, M. Schierhorn, N. Gupta, G. D. Stucky, C. J. Hawker. Adv. Mater. 2008, 20, 3728— 3733。  [Document 4] L. M. Campos, I. Me ine l , R. G. Guino, M. Schierhorn, N. Gupta, G. D. Stucky, C. J. Hawker. Adv. Mater. 2008, 20, 3728-3733.
比较例 8 紫外光刻胶组合物 T2  Comparative Example 8 UV photoresist composition T2
根据如下的文献 5所提供的光刻胶及其相应数据, 即主要成分包括: 四(3 - 巯基丙酸)季戊四醇酯 (ΡΤΜΡ ) , 丙烯酸 2, 2-二-丙烯酰氧甲基-丁酯, 光引发剂 2, 2-二甲氧基 -苯基乙酮, 形成 Τ2紫外光刻胶。  According to the photoresist provided in the following Document 5 and its corresponding data, the main components include: tetrakis(3-propionylpropionic acid) pentaerythritol ester (ΡΤΜΡ), 2,2-di-acryloyloxymethyl-butyl acrylate The photoinitiator 2,2-dimethoxy-phenylethanone forms a Τ2 ultraviolet photoresist.
[文献 5] E. C. Hagberg, M. Malkoch, Y. Ling, C. J. Hawker, K. R. Carter. Nano Lett. 2007, 7, 233-237。 压印工艺的实施例:  [Document 5] E. C. Hagberg, M. Malkoch, Y. Ling, C. J. Hawker, K. R. Carter. Nano Lett. 2007, 7, 233-237. Example of imprint process:
实施例 12 以紫外光刻胶组合物 JTHC- B-l制备软模板及其压印工艺  Example 12 Preparation of Soft Template and UV Imprinting Process Using UV Photoresist Composition JTHC-B-1
使用实施例 6所提供的紫外光刻胶组合物 JTHC-B- 1作为图 2中的紫外光刻 胶 2, 使用如下方法制备软模板, 及将其作为压印的软模板进行压印工艺, 如图 2 所示:  Using the ultraviolet photoresist composition JTHC-B-1 provided in Example 6 as the ultraviolet photoresist 2 in FIG. 2, a soft template was prepared by the following method, and used as an imprinted soft template for the imprint process. as shown in picture 2:
1.如图 2 (A)所示, 修饰衬底石英片 3和硅片 6: 将待修饰衬底石英片 3和硅 片 6置于 98% H2S04 : 30% H202体积比 3 : 1的混合溶液中, 150°C下处理 3— 7个小 时。 丙酮、 酒精先后冲洗数次、 干燥, 然后 120Ό下真空干燥 8— 12小时。 将干燥 后的衬底石英片 3和硅片 6浸入含质量分数为 0. 2% 3- (三甲氧基甲硅垸基)丙基- 2-甲基 -2-丙烯酸酯(MAPTES)的无水甲苯溶液中, 密封保存 4一 6小时。 用丙酮洗净 衬底石英片 3和硅片 6, 氮气吹干以备用, 以此完成了修饰衬底石英片 3和硅片 6 的工序。 1. As shown in Fig. 2(A), the substrate quartz plate 3 and the silicon wafer 6 are modified: the quartz plate 3 and the silicon wafer 6 to be modified are placed in a volume of 98% H 2 S0 4 : 30% H 2 0 2 It is treated at a temperature of 150 ° C for 3-7 hours in a mixed solution of 3:1. Acetone and alcohol were washed several times, dried, and then vacuum dried at 120 Torr for 8-12 hours. The dried substrate quartz plate 3 and the silicon wafer 6 were immersed in a mass fraction of 0.2% 3-(trimethoxysilyl) propyl-2-methyl-2-acrylate (MAPTES). In a water toluene solution, seal and store for 4-6 hours. The substrate quartz plate 3 and the silicon wafer 6 were washed with acetone, and nitrogen was blown dry for use, thereby completing the process of modifying the substrate quartz plate 3 and the silicon wafer 6.
釆用旋涂工艺在修饰过的衬底石英片 3上甩胶: 采用实施例 6提供的紫外光 刻胶 JTHC- B- 1作为压印光刻胶 2, 旋转涂膜, 其条件是: 低速 300rpm, 时间 10 秒; 高速 3000rpm, 时间 20秒, 膜厚 750 ± 5nm。  甩 Coating on the modified substrate quartz plate 3 by a spin coating process: Using the ultraviolet photoresist JTHC-B-1 provided in Example 6 as the imprinting photoresist 2, the coating film is rotated under the following conditions: 300 rpm, time 10 seconds; high speed 3000 rpm, time 20 seconds, film thickness 750 ± 5 nm.
2.如图 2 (B)所述, 将带有紫外光刻胶 2的石英片 3, 与石英模板 1进行接 触, 一起放入压印机中。 抽真空 3分钟, 给石英模板 1施加 100N的压力, 在 365nm的紫外灯下曝光 3分钟。 2. As shown in Fig. 2 (B), the quartz plate 3 with the ultraviolet photoresist 2 is connected to the quartz template 1. Touch and put them together in the press. Vacuum was applied for 3 minutes, and a pressure of 100 N was applied to the quartz template 1 and exposed to an ultraviolet lamp of 365 nm for 3 minutes.
3.如图 2 (C)所示, 将固化后的带有石英模板 1的纳米图案的石英片 3与脱离 石英模板 1脱离 (即: 脱模) , 可得到固化后带有图形的软模板 4。 然后再将带有 软模板 4的石英片 3, 在 100Ό下继续老化 3小时, 老化后作为压印模板使用。  3. As shown in FIG. 2(C), the cured quartz plate 3 with the quartz template 1 and the nano-patterned quartz plate 3 are detached from the detached quartz template 1 (ie, demolded), and a soft template with a pattern after curing can be obtained. 4. Then, the quartz piece 3 with the soft template 4 was further aged at 100 Torr for 3 hours, and used as an embossing template after aging.
4.如图 2 (D)所示, 在修饰过的硅衬底 6上旋涂现有的商业光刻胶 5, 所述的 旋涂是指: 以 300rpm旋转涂膜 10秒后, 再以 5000rpm旋转涂膜 20秒, 得到的膜 厚为 500± 5nm。  4. As shown in FIG. 2(D), the existing commercial photoresist 5 is spin-coated on the modified silicon substrate 6. The spin coating refers to: rotating the film at 300 rpm for 10 seconds, and then The coating film was rotated at 5000 rpm for 20 seconds to obtain a film thickness of 500 ± 5 nm.
5.如图 2 (E)所示, 将上述制得的带有软模板 4图形的石英片 3, 如图 2 (D)所 示那样, 以软模板 4面向商业光刻胶 5的状态, 将软模板 4盖在商业光刻胶 5上, 连同硅衬底 6—起放入压印机中。 将软模板 4的纳米图案复制于商业光刻胶 5上, 抽真空 3分钟, 给模板施加 100N的压力, 在 365nm的紫外灯下曝光 3分钟固化。  5. As shown in FIG. 2(E), the quartz plate 3 with the soft template 4 pattern obtained as described above is oriented to the commercial photoresist 5 with the soft template 4 as shown in FIG. 2(D). The soft template 4 is overlaid on the commercial photoresist 5, and placed in the stamping machine together with the silicon substrate 6. The nanopattern of the soft template 4 was reproduced on a commercial photoresist 5, vacuum was applied for 3 minutes, a pressure of 100 N was applied to the template, and exposure was performed by exposure to a 365 nm ultraviolet lamp for 3 minutes.
6.如图 2 (F)所示, 将带有软模板 4图形的石英片 3与带有 7的硅衬底 6脱离 软模板 4, 得到带有图形的商业胶固化膜 7, 这就是软模板压印光刻胶的工艺。  6. As shown in Fig. 2(F), the quartz plate 3 with the soft template 4 pattern and the silicon substrate 6 with the 7 are separated from the soft template 4 to obtain a patterned commercial adhesive cured film 7, which is soft. The process of embossing photoresist with a stencil.
实施例 13 以紫外光刻胶 JTHC-B-2制备软模板及其压印  Example 13 Preparation of Soft Template and Imprinting Using UV Photoresist JTHC-B-2
除了使用实例 7的紫外光刻胶 JTHC-B- 2以外, 其余步骤都与实施例 12相 同。  The rest of the steps were the same as in Example 12 except that the ultraviolet photoresist JTHC-B-2 of Example 7 was used.
实施例 14 以紫外光刻胶 JTHC- B-3制备软模板及其压印  Example 14 Preparation of Soft Template and Imprinting Using UV Photoresist JTHC-B-3
除了使用实例 8的紫外光刻胶 JTHC- B- 3以外, 其余步骤都与实施例 12相 同。  The rest of the steps were the same as in Example 12 except that the ultraviolet photoresist JTHC-B-3 of Example 8 was used.
实施例 15 以紫外光刻胶 JTHC- B- 4制备软模板及其压印  Example 15 Preparation of Soft Template and Imprinting Using UV Photoresist JTHC-B-4
除了使用实例 9的紫外光刻胶 JTHC-B- 4以外, 其余步骤都与实施例 12相 同。  The rest of the steps were the same as in Example 12 except that the ultraviolet photoresist JTHC-B-4 of Example 9 was used.
实施例 16 以紫外光刻胶 JTHC- B- 5制备软模板及其压印  Example 16 Preparation of Soft Template and Imprinting Using UV Photoresist JTHC-B-5
除了使用实例 10的紫外光刻胶 JTHC-B-5以外, 其余步骤都与实施例 12相 同。  The rest of the steps were the same as in Example 12 except that the ultraviolet photoresist JTHC-B-5 of Example 10 was used.
实施例 17 以紫外光刻胶 JTHC- B- 6制备软模板及其压印  Example 17 Preparation of Soft Template and Imprinting Using UV Photoresist JTHC-B-6
除了使用实例 1 1的紫外光刻胶 JTHC-B-6以外, 其余步骤都与实施例 12相 比较例 9 紫外光刻胶 JTHC-A— 1制备软模板 (C - 1 ) Except that the ultraviolet photoresist JTHC-B-6 of Example 11 was used, the remaining steps were the same as those of Example 12. Comparative Example 9 Preparation of Soft Template (C-1) by UV Photoresist JTHC-A-1
除了使用比较例 1所形成的光刻胶组合物 JTHC-A— 1以外, 其余步骤都与实 施例 12相同并形成比较例 1的软模板 (C- 1 ) 。 :  The rest of the steps were the same as in Example 12 except that the photoresist composition JTHC-A-1 formed in Comparative Example 1 was used, and the soft template (C-1) of Comparative Example 1 was formed. :
比较例 10 PTMP紫外光刻胶组合物制备软模板 (C-2)  Comparative Example 10 Preparation of Soft Template from PTMP Ultraviolet Photoresist Composition (C-2)
除了使用比较例 3所形成的光刻胶组合物 JTHC-A—3以外, 其余步骤都与实 施例 12相同并形成比较例 3的软模板(C- 2)。  The remaining steps were the same as in Example 12 except that the photoresist composition JTHC-A-3 formed in Comparative Example 3 was used, and the soft template (C-2) of Comparative Example 3 was formed.
比较例 11商业胶美国道康宁 Sylgard 184 (聚二甲基硅氧烷, 简称 PDMS)制 备软模板 (C - 3)  Comparative Example 11 Commercial Adhesive Dow Corning Sylgard 184 (Polydimethylsiloxane, PDMS for short) Preparation of Soft Formwork (C-3)
除了使用比较例 4的商业胶美国道康宁 Sylgard 184 (PDMS)和在实施例 12 图 2 (B)步骤中, 将带有商业胶美国道康宁 Sylgard 184 ( PDMS ) 组合物 2的石英片 3, 与石英模板 1进行接触, 一起放入压印机中。 抽真空 3分钟, 给模板施加 100N 的压力, 在 10CTC下加热固化 1小时。 图 2 (C)步骤中, 脱模后, 无需进一步的老化 处理即可作为软模板使用以外, 其余的工艺流程均与实施例 12相同,得到比较例 4 的软模板(C- 3)。  In addition to using the commercial adhesive of Comparative Example 4, Dow Corning Sylgard 184 (PDMS) and in Example 12, Figure 2 (B), quartz sheet 3 with commercial gum Dow Corning Sylgard 184 (PDMS) Composition 2, with quartz The template 1 is brought into contact and placed together in the stamping machine. A vacuum was applied for 3 minutes, a pressure of 100 N was applied to the stencil, and heat curing was carried out at 10 CTC for 1 hour. In the step (C) of Fig. 2, after the mold was released, it was used as a soft template without further aging treatment, and the rest of the process flow was the same as in Example 12, and the soft template (C-3) of Comparative Example 4 was obtained.
比较例 12 紫外光刻胶组合物 SB4制备软模板 (C- 4)  Comparative Example 12 UV Photoresist Composition SB4 Preparation of Soft Template (C-4)
除了使用比较例 5的紫外光刻胶组合物 SB4以外, 其余步骤与实施例 12相 同, 并形成比较例 5的软模板(C-4)。  The rest of the procedure was the same as in Example 12 except that the ultraviolet resist composition SB4 of Comparative Example 5 was used, and the soft template (C-4) of Comparative Example 5 was formed.
比较例 13 紫外光刻胶组合物 SB5制备软模板 (C-5)  Comparative Example 13 UV Photoresist Composition SB5 Preparation of Soft Template (C-5)
除了使用比较例 6的紫外光刻胶组合物 SB5以外, 其余步骤与实施例 12相 同, 并形成比较例 6的软模板(C-5)。  The rest of the procedure was the same as in Example 12 except that the ultraviolet resist composition SB5 of Comparative Example 6 was used, and the soft template (C-5) of Comparative Example 6 was formed.
比较例 14 紫外光刻胶组合物 SB6制备软模板 (C-6)  Comparative Example 14 UV Photoresist Composition SB6 Preparation of Soft Template (C-6)
除了使用比较例 7的紫外光刻胶组合物 SB6以外, 其余步骤与实施例 12相 同, 并形成比较 7的软模板 (C- 6)。  The remaining steps were the same as in Example 12 except that the UV resist composition SB6 of Comparative Example 7 was used, and a soft template (C-6) of Comparative 7 was formed.
比较例 15 紫外光刻胶组合物 T2制备软模板 (C-7)  Comparative Example 15 UV Photoresist Composition T2 Preparation of Soft Template (C-7)
除了使用比较例 8的紫外光刻胶组合物 T2以外, 其余步骤与实施例 12相 同, 并形成比较例 8的软模板(C-7)。  The rest of the procedure was the same as in Example 12 except that the ultraviolet resist composition T2 of Comparative Example 8 was used, and the soft template (C-7) of Comparative Example 8 was formed.
将上述组合物进行归纳, 形成表 1。  The above compositions were summarized to form Table 1.
表 1.各光刻胶组合物的组分及其含量和成膜后的性能 通式(1)化 通式 (2)化 交联剂 引发剂 光刻胶组合物 成膜性能 Table 1. Composition and content of each photoresist composition and properties after film formation Film-forming properties of photoresist composition of general formula (2) compounding agent (2)
合物 (wt%) 合物 (wt%) (wt%) (wt%)  Compound (wt%) compound (wt%) (wt%) (wt%)
1,6-二 (丙烯 ·  1,6-di (propylene)
1H, 1H,2H,2 α -胺垸基  1H, 1H, 2H, 2 α -Amine thiol
POSS- 酰氧基) - 实施例 6 H-全氟辛 苯酮 低表面能, 宜脱  POSS-acyloxy) - Example 6 H-Perfluorooctylbenzophenone Low surface energy, suitable for off
SCFA5-SH 2,2,3,3,4,4,5 SCFA 5 -SH 2,2,3,3,4,4,5
JTHC-B-1 基丙烯酸酯 (1-907) 模, 高机械性能  JTHC-B-1 based acrylate (1-907) mold, high mechanical properties
29.8% ,5-八氟己烷  29.8%, 5-octafluorohexane
39.9% 0.5%  39.9% 0.5%
29.8%  29.8%
1,6-二 (丙烯  1,6-di (propylene
1H, 1H,2H,2  1H, 1H, 2H, 2
POSS- 酰氧基) - 实施例 7 H-全氟辛 1-907 低表面能, 宜脱  POSS-acyloxy) - Example 7 H-Perfluorooctane 1-907 Low surface energy, suitable for off-
SCFA6-SH 2,2,3,3,4,4,5 SCFA 6 -SH 2,2,3,3,4,4,5
JTHC-B-2 基丙烯酸酯 0.3% 模, 高机械性能  JTHC-B-2 based acrylate 0.3% mold, high mechanical properties
29.9% ,5-八氟己烷  29.9%, 5-octafluorohexane
10.0%  10.0%
59.8%  59.8%
三羟甲基丙  Trimethylol propyl
POSS- 甲基丙烯酸 垸三甲基丙  POSS- methacrylic acid 垸trimethyl propyl
实施例 8 1-907 低表面能, 宜脱  Example 8 1-907 Low surface energy, suitable for off
SCFA6-SH 苄酯 (BMA) 烯酸酯 SCFA 6 -SH benzyl ester (BMA) enoate
JTHC-B-3 1.0% 模, 高机械性能  JTHC-B-3 1.0% mold, high mechanical properties
49.5% 29.7% (TMPT)  49.5% 29.7% (TMPT)
19.8%  19.8%
1,6-二 (丙烯  1,6-di (propylene
POSS- 酰氧基) - 实施例 9 乙烯基丁醚 1-907 低表面能, 宜脱  POSS-acyloxy) - Example 9 Vinyl butyl ether 1-907 Low surface energy, suitable for off
SDCFA6-SH 2,2,3, 3,4,4,5  SDCFA6-SH 2,2,3, 3,4,4,5
JTHC-B-4 39.6% 1.0% 模, 高机械性能  JTHC-B-4 39.6% 1.0% mold, high mechanical properties
49.5% ,5-八氟己垸  49.5%, 5-octafluorohexane
9.9%  9.9%
1H, 1H,2H,2 1,3-二乙烯- 实施例 10 POSS-SS-SH H-全氟突 1,1,3,3-四甲 1-907 低表面能, 宜脱 JTHC-B-5 49.7% 醇丙烯酸酯 基二硅氧烷 0.5% 模, 高机械性能  1H, 1H, 2H, 2 1,3-diethylene - Example 10 POSS-SS-SH H-perfluoride 1,1,3,3-tetramethyl 1-907 Low surface energy, suitable for JTHC-B- 5 49.7% alcohol acrylate disiloxane 0.5% mold, high mechanical properties
29.9% 19.9%  29.9% 19.9%
1,6-二 (丙烯  1,6-di (propylene
1Η, 1Η,2Η,2  1Η, 1Η, 2Η, 2
POSS- 酰氧基) - 实施例 11 H-全氟努 1-907 低表面能, 宜脱  POSS-acyloxy) - Example 11 H-perfluoronucleus 1-907 low surface energy, suitable for off
SPFDE8-SH 2,2,3,3,4,4,5 SPFDE 8 -SH 2,2,3,3,4,4,5
JTHC-B-6 醇丙烯酸酯 0.5% 模, 高机械性能  JTHC-B-6 alcohol acrylate 0.5% mold, high mechanical properties
19.9% ,5-八氟己垸  19.9%, 5-octafluorohexanide
49.7 %)  49.7 %)
29.9%  29.9%
三羟甲基丙  Trimethylol propyl
甲基丙烯酸 烷三甲基丙  Methyl methacrylate
比较例 1 POSS-SH 1-907 高表面能, 脱模 苄酯 烯酸酯  Comparative Example 1 POSS-SH 1-907 high surface energy, release benzyl ester enoate
JTHC-A- 1 29.7% 1.0% 非常困难  JTHC-A- 1 29.7% 1.0% very difficult
49.5% (TMPT)  49.5% (TMPT)
19.8%  19.8%
1,6-二 (丙烯  1,6-di (propylene
1H, 1H,2H,2  1H, 1H, 2H, 2
酰氧基) - 光刻胶非均相, 比较例 2 POSS-SH H-全氟辛 1-907  Acyloxy) - Photoresist Heterogeneous, Comparative Example 2 POSS-SH H-Perfluoroxin 1-907
2,2,3,3,4,4,5 混浊, 成膜不透 JTHC-A-2 29.9% 醇丙烯酸酯 0.3%  2,2,3,3,4,4,5 turbid, film-impermeable JTHC-A-2 29.9% alcohol acrylate 0.3%
,5-八氟己垸 明 39.9%  ,5-octafluorohexidine, 39.9%
29.9%  29.9%
三羟甲基丙  Trimethylol propyl
四 (3-巯基丙  Four (3-mercaptopropyl
甲基丙烯酸 烷三甲基丙 高表面能' 不宜 比较例 3 . 酸)季戊四醇 1-907  High surface energy of methacrylic acid trimethyl propyl hydride is not suitable. Comparative Example 3. Acid) Pentaerythritol 1-907
苄酯 烯酸酯 脱模, 低机械性 JTHC-A-3 酯 (PTMP) 1.0%  Benzyl ester enoate release, low mechanicality JTHC-A-3 ester (PTMP) 1.0%
49.5% (TMPT) 能 29.7%  49.5% (TMPT) can 29.7%
19.8%  19.8%
比较例 4  Comparative example 4
低表面能, 宜脱 商业胶美国道  Low surface energy, should be taken off
模, 低机械性 康宁 Sylgard  Mode, low mechanical property Corning Sylgard
能, 图形易受损 184 四 (3-巯基丙 四乙二醇二 2,2-二甲 Yes, the graphics are vulnerable to damage 184 Tetrakis(3-mercaptopropyltetraethylene glycol di 2,2-dimethyl
高表面能, 不宜 比较例 5 酸)季戊四醇 乙烯醚 氧基 -苯基  High surface energy, not suitable Comparative Example 5 Acid) Pentaerythritol Vinyl ether Oxy-phenyl
脱模, 低机械性 组合物 SB4 酯 (PTMP) (W=300) 乙酮  Demoulding, low mechanical composition SB4 ester (PTMP) (W=300) ethyl ketone
能, 图形易受损 (DMPA) 四 (3-巯基丙 聚乙二醇二  Can, graphic damage (DMPA) tetra (3-mercaptopropyl PEG)
高表面能, 不宜 比较例 6 酸)季戊四醇 丙烯酸酯  High surface energy, not suitable for comparison 6 acid) pentaerythritol acrylate
DMPA 脱模, 低机械性 组合物 SB5 酯 (PTMP) (W=300)  DMPA release, low mechanical composition SB5 ester (PTMP) (W=300)
能, 图形易受损 四 (3-巯基丙 聚乙二醇二  Yes, the pattern is easily damaged. Four (3-mercaptopropyl PEG)
高表面能, 不宜 比较例 7 酸)季戊四醇 丙烯酸酯  High surface energy, not suitable. Comparative Example 7 Acid) Pentaerythritol Acrylate
DMPA 脱模, 低机械性 组合物 SB6 酯 (PTMP) (W=700)  DMPA release, low mechanical composition SB6 ester (PTMP) (W=700)
能, 图形易受损 四 (3-巯基丙 丙烯酸 2, 高表面能, 不宜 比较例 8  Yes, the pattern is easily damaged. Four (3-mercaptopropene acrylic acid 2, high surface energy, not suitable for comparison 8
酸)季戊四醇 2-二-丙烯酰 DMPA 脱模, 低机械性 组合物 T2  Acid) pentaerythritol 2-di-acryloyl DMPA release, low mechanical composition T2
酯 (PTMP) 氧甲基 -丁酯 能, 图形易受损  Ester (PTMP) oxymethyl-butyl ester, easy to damage graphics
将上述的本发明实施例的紫外光刻胶组合物、 比较例的光刻胶组合物 (商业 胶、 现有文献报道的硫醇 /烯类紫外光刻胶[1'2] ) 及其固化后所形成的各种膜 (例如 图 2 (C)的膜 4)在物理性能上进行了比较, 其结果见表 2。 The above-mentioned ultraviolet photoresist composition of the embodiment of the invention, the photoresist composition of the comparative example (commercial adhesive, thiol/olefinic ultraviolet photoresist [1 ' 2] reported in the prior literature) and curing thereof The various films formed later (for example, the film 4 of Fig. 2(C)) were compared in physical properties, and the results are shown in Table 2.
表 2 Table 2
Figure imgf000025_0001
一个成功的紫外光刻胶组合物, 首先要保证体系均一, 固化前后不分相, 稳 定性好, 有良好的存储性能。 通过比较例 2和实施列的光刻胶组合物比较可以看 出, POSS- SH与含氟丙烯酸单体或含氟烯烃所形成的组合物, 整个体系是不混溶 的, 发生明显的相分离, 很显然不适合纳米压印体系, 而本发明的氟化修饰后的 P0SS-SH与含氟单体、 交联剂有很好的相容性, 所有实施列体系透明均一, 稳定性 好, 有良好的储存性能。 同时本发明所提供的紫外光刻胶固化后没有相分离行为, 说明固化后的聚合物膜机械性能稳定, 力学性能均一。
Figure imgf000025_0001
A successful UV photoresist composition must first ensure uniformity of the system, no phase separation before and after curing, good stability, and good storage performance. By comparison of the photoresist compositions of Comparative Example 2 and the examples, it can be seen that the composition of POSS-SH and the fluorine-containing acrylic monomer or fluorine-containing olefin is immiscible throughout the system, and significant phase separation occurs. It is obviously not suitable for the nanoimprinting system, and the fluorinated P0SS-SH of the present invention has good compatibility with the fluorine-containing monomer and the crosslinking agent, and all the implementation systems are transparent and uniform, and have good stability. Has good storage performance. At the same time, the UV photoresist provided by the invention has no phase separation behavior after curing, indicating that the cured polymer film has stable mechanical properties and uniform mechanical properties.
如表 2所示, 本发明的紫外光刻胶组合物与商业胶 Sylgard 184相比, 体系 粘度小, .因此相应的压印时所需压力相对较小, 有利于低耗压印, 同时低压有利于 降低对石英模板的损害。  As shown in Table 2, the ultraviolet photoresist composition of the present invention has a lower viscosity than the commercial rubber Sylgard 184, so that the pressure required for the corresponding imprinting is relatively small, which is advantageous for low-cost printing and low pressure. It is beneficial to reduce the damage to the quartz template.
如表 2所示数据, 本发明的紫外光刻胶固化后所形成的聚合物膜的机械强度 跟商业胶 Sylgard 184以及比较例 5— 8的紫外光刻胶组合物 (SB4- SB6和 T2 ) 相 比, 由于引入了 P0SS的刚性结构, 杨氏模量和硬度得到大大提高, 说明本发明所 提供的紫外光刻胶组合物, 如果被用作软模板材料使用的话, 该软模板可以有较强 的机械性能。 As shown in Table 2, the mechanical strength of the polymer film formed by curing the ultraviolet photoresist of the present invention Compared with the commercial photoresist Sylgard 184 and the UV photoresist compositions of Comparative Examples 5-8 (SB4-SB6 and T2), the Young's modulus and hardness are greatly improved due to the introduction of the rigid structure of P0SS, indicating the present invention. The provided UV photoresist composition can have strong mechanical properties if used as a soft stencil material.
就附图进行说明:  Explain the drawings:
图 4为 SEM图, 分别是: 图 4 (a) 200nm点阵石英模板 1 ; 图 4 (b ) 、 4 (c ) 分别是实施例中的 JTHC-B- 2紫外光刻胶组合物、 商业胶 Sylgard 184组合物经模 板 1 (图 4 (a) ) 所制得的软模板 4的图形模样; 图 4 ( d) 和图 4 (e)分别是上述 所制得的两种软模板(图 4 (b ) 、 4 ( c ) )依次压印商业胶 watershed 11120, 固 化脱模后得到的压印聚合膜 7的图形的模样。  Figure 4 is an SEM image, respectively: Figure 4 (a) 200nm lattice quartz template 1; Figures 4 (b), 4 (c) are the JTHC-B-2 UV photoresist composition in the examples, respectively, commercial The pattern of the soft template 4 prepared by the template S1 (d) and Fig. 4 (e) are the two soft templates prepared by the above-mentioned composition of the gel Sylgard 184 composition (Fig. 4 (a)); 4 (b), 4 (c)) sequentially embossed the commercial glue watershed 11120, and cured the pattern of the imprinted polymeric film 7 obtained after demolding.
从图 4 (c)中可以看出, 商业胶 Sylgard 184软模板的固化膜(图 4 ( c ) )由 于自身较小的模量 ( 18MPa ) 和硬度 ( 2. IMPa) , 压印脱模后的所得的软模板 (例如 软模板 4)的结构明显发生变形和弯曲, 很显然对于要求具有高分辨率以及高深宽 比的图形压印工序来说, 由商业胶 Sylgard 184组合物所形成的软模板不能保证原 模扳图形的精准性。 而利用图 4 (c)的软模板所形成的压印图形(例如图 2中的膜 7) 来说, 图 4 (e)存在大量的点阵结构的断臂残留在图形凹槽中, 说明 PDMS作为软模 板使用, 机械性能远远不够, 在脱模过程中会发生结构断裂, 同时由于本身软模板 图形的变形导致压印出的图形变形。 而利用图 4 (b)软模板所形成的图 4 (d)的压印 膜来说, 本发明所制造的软模板图形精确, 机械性能足以保证软模板的微结构不会 撕裂, 同时保证了复制的精确性。  As can be seen from Figure 4 (c), the cured film of the commercial rubber Sylgard 184 soft template (Fig. 4 (c)) is embossed after demolding due to its small modulus (18 MPa) and hardness (2 IMPa). The resulting soft template (e.g., soft template 4) is clearly deformed and bent, and it is apparent that the softness of the commercial gum Sylgard 184 composition is required for a graphic imprinting process requiring high resolution and high aspect ratio. The template does not guarantee the accuracy of the original pattern. With the embossing pattern formed by the soft template of FIG. 4(c) (for example, the film 7 in FIG. 2), FIG. 4(e) has a large number of lattice-shaped broken arms remaining in the pattern grooves, indicating PDMS is used as a soft template, and the mechanical properties are far from sufficient. Structural fracture occurs during the demolding process, and the embossed pattern is deformed due to the deformation of the soft template pattern. With the embossing film of Fig. 4(d) formed by the soft template of Fig. 4(b), the soft stencil pattern produced by the invention is precise, and the mechanical properties are sufficient to ensure that the microstructure of the soft stencil is not torn, and at the same time ensure The accuracy of the copy.
使用本发明的紫外光刻胶组合物作为软模板, 除了上述机械性能优越以外, 还就是其表面能低。 众所周知, 软模板的表面能越小, 软模板与固化后光刻胶压印 膜之间的作用力越小, 越有助于脱模。 如表 2所示, 无氟组分的紫外光刻胶 JTHC - A-1 (比较例 1 ) 固化后的表面能 (53. OmJ/crn— 2 ) 相对非常大, 实验过程中就根本 无法脱模。 而对于本发明的组合物来说, 由于使用了 POSS- SH上嫁接了含氟基团的 化合物, 紫外光固化后的聚合物膜表面能明显降低, 实验过程中表现出良好的脱模 效果, 说明了使用了本发明的化合物所形成的紫外光刻胶组合物的固化膜由于具有 较低的表面能, 能作为软模板使用到现行的纳米光刻制备工艺中。 同时, 与现有文 献报道 [1'2]的硫醇 /烯类的组合物 (SB4- SB6)所形成的紫外光刻胶固化膜的静态水接 触角对比, 可以发现本发明所提供的紫外光刻胶固化膜明显大很多, 说明本发明所 提供的紫外光刻胶固化后具有超强的疏水性能, 表面张力小, 有助于脱模。 The use of the ultraviolet photoresist composition of the present invention as a soft template is superior to the above mechanical properties, that is, its surface energy is low. It is well known that the smaller the surface energy of the soft stencil, the smaller the force between the soft stencil and the cured photoresist embossing film, and the more helpful the demolding. As shown in Table 2, the surface energy (53. OmJ/crn- 2 ) of the UV-free photoresist JTHC-A-1 (Comparative Example 1) after curing is relatively large, and it cannot be removed at all during the experiment. mold. For the composition of the present invention, since the fluorine-containing group grafted on the POSS-SH is used, the surface energy of the polymer film after ultraviolet curing is remarkably lowered, and a good release effect is exhibited during the experiment. It is illustrated that the cured film of the ultraviolet photoresist composition formed using the compound of the present invention can be used as a soft template in the current nanolithographic preparation process due to its low surface energy. At the same time, the static hydration of the UV photoresist cured film formed by the thiol/olefin composition (SB4-SB6) reported in the existing literature [1 ' 2] The comparison of the antenna angles shows that the UV photoresist cured film provided by the present invention is significantly larger, indicating that the ultraviolet photoresist provided by the present invention has superior hydrophobic properties after curing, and has a small surface tension and contributes to demolding.
通过实施列 8 (JTHC-B-3) 与比较例 3 (JTHC-A-3) 物理性能对比发现, 在 其他组分相同的情况下, 添加了本发明所提供的化合物 (1) P0SS-SCFA6-SH的组合 物和四(3-巯基丙酸)季戊四醇酯 (PTMP) 的组合物, 所得的固化后的聚合物膜在性 能上差异很大, 比较例 4 (Sylgard 184) 膜的机械性能, 例如表面能和硬度都大 大不如实施列 8 (JTHC-B-3) 的固化后所形成的聚合物膜的机械性能, 由此进一步 说明了本发明所提供的紫外光刻胶组合物由于添加了无机有机杂化粒子 (P0SS) , 就使其具备优异的机械性能, 使其极其适合于现在要求极高的纳米压印工艺。 By comparing the physical properties of the column 8 (JTHC-B-3) with the comparative example 3 (JTHC-A-3), it was found that the compound (1) P0SS-SCFA provided by the present invention was added in the case where the other components were the same. The composition of the 6- SH composition and the tetrakis(3-mercaptopropionic acid) pentaerythritol ester (PTMP), the resulting cured polymer film differs greatly in performance, and the mechanical properties of the film of Comparative Example 4 (Sylgard 184) For example, the surface energy and hardness are much less than the mechanical properties of the polymer film formed after the curing of the column 8 (JTHC-B-3), thereby further illustrating that the ultraviolet photoresist composition provided by the present invention is added. Inorganic organic hybrid particles (P0SS) have excellent mechanical properties, making them ideal for today's highly demanding nanoimprint processes.
如图 3所示, 图 3(a)、 (c)和(e)分别为石英模板 1的不同结构图形: (a) 3.00μιπ点阵, (c) 350nm点阵, (e) 700nm光栅; 图 3 (b)、 (d)和(f)分别是利 用了具有图 3(a)、 (c)和(e)的石英模板 1和实施例中的紫外光刻胶 JTHC- B- 1组合 物所制得的软模板的相应的图形: 即 (b) 3.00μπι点阵, (d) 350nm点阵, (f) 700nm光栅。 如图所示, 压印工艺后所形成的压印图形, 即图 2(F)7的图形无缺 陷, 表面无剥离, 结构完整, 就是因为其优异的技术效果, 从此可知本发明所提供 的光刻胶组合物软模板图形在很大范围内都是有效的复制了, 可在大面积内压印出 纳米尺寸的图形结构, 具备优秀的可复制性。  As shown in Fig. 3, Figs. 3(a), (c) and (e) are different structural patterns of the quartz template 1 respectively: (a) 3.00 μιη lattice, (c) 350 nm lattice, (e) 700 nm grating; Figures 3 (b), (d) and (f) respectively utilize a quartz template 1 having Figures 3 (a), (c) and (e) and a UV photoresist JTHC-B-1 combination in the examples, respectively. The corresponding pattern of the soft template produced by the object: (b) 3.00μπι lattice, (d) 350nm lattice, (f) 700nm grating. As shown in the figure, the embossed pattern formed after the embossing process, that is, the pattern of FIG. 2(F) 7 is free from defects, the surface is not peeled off, and the structure is intact, because of its excellent technical effects, from which the present invention is provided. The soft stencil pattern of the photoresist composition is effectively replicated in a wide range, and the nano-sized pattern structure can be embossed in a large area, and has excellent reproducibility.
图 5是通过采用实施例的紫外光刻胶 JTHC-B-2组合物所制得的不同结构和 尺寸的软模板 4压印商业胶 Watershed 11120, 固化脱模后得到带有图形的商业胶 固化膜 7的 SEM图: (a) 350nm光栅, (b) 700nm点阵。 从图 5可知, 使用了本发 明的组合物所得到的固化膜 7在图形上无缺陷, 表面无剥离, 结构完整, 说明使用 了本发明的组合物作为软模板来进行压印的话, 不仅可在大面积内压印出纳米尺寸 的图形结构, 同时能有效的与模板剥离。  Figure 5 is a soft template 4 embossed commercial glue Watershed 11120 of different structures and sizes prepared by using the UV photoresist JTHC-B-2 composition of the embodiment, and cured by demoulding to obtain a graphic commercial adhesive. SEM image of film 7: (a) 350 nm grating, (b) 700 nm lattice. As is apparent from Fig. 5, the cured film 7 obtained by using the composition of the present invention has no defects in the pattern, no peeling of the surface, and a complete structure, indicating that the composition of the present invention can be used as a soft template for imprinting. The nano-sized graphic structure is embossed in a large area while being effectively peeled off from the template.
从图 4(d)和图 5 (a和 b)还可知, 使用本发明的组合物所形成的软模板不仅 可以压印出不同尺寸的图形, 还可以压印出不同结构的图形, 可以得知该胶作为软 模板使用可以适应实际生产中不同尺寸和不同结构图形的要求。  It can also be seen from Fig. 4(d) and Fig. 5 (a and b) that the soft template formed by using the composition of the present invention can not only emboss patterns of different sizes, but also emboss patterns of different structures. Knowing that the glue is used as a soft template can meet the requirements of different sizes and different structural patterns in actual production.
图 6分别是 (a) 通过采用实施例的紫外光刻胶 JTHC- B-2组合物所制得的软 模板的图形模样、 (b)和(c)分别是实施例的紫外光刻胶 JTHC-B- 2组合物所制得的 软模板和商业胶 Sylgard 184组合物所制得的软模板在 10次压印商业胶 Watershed 11120以后的 AFM图。 从图 6 ( c ) 中可以看出, 商业胶 Sylgard 184 作为软模板使用, 套用 10次以后, 其软模板的图形表面变的粗糙, 表面逐渐被污 染, 很显然会影响模板的使用效率以及压印后所形成的图形结构的完整性。 而从图 6 (b ) 所示可知, 与使用前图形 6 ( a) 相比, 使用了 10次后的软模板的表面结构 基本没有变化, 结构完整, 说明本发明所提供的紫外光刻胶组合物作为软模板使用 有优异的脱模效率, 能提高软模板的利用率。 本发明涉及一种通式化合物(1)、 使用了该通式(1)的化合物的组合物以及使 用该组合物作为压印工序中的软模板, 使用了通式化合物(1)和通式化合物(2)的组 合物体系透明均一, 稳定性好, 有良好的储存性能, 同时还因为其具有低粘度, 便 于进行旋涂涂覆, 可以理想地应用于压印工艺操作中, 降低了对石英模板的损害。 Figure 6 is a (a) pattern of a soft template prepared by using the ultraviolet photoresist JTHC-B-2 composition of the examples, (b) and (c) respectively of the ultraviolet photoresist JTHC of the examples. The soft template prepared by the -B-2 composition and the soft template prepared from the commercial gum Sylgard 184 composition were printed on 10 times of commercial glue. AFM map after Watershed 11120. It can be seen from Fig. 6 (c) that the commercial glue Sylgard 184 is used as a soft template. After 10 times of application, the surface of the soft template becomes rough and the surface is gradually contaminated, which obviously affects the efficiency and pressure of the template. The integrity of the graphic structure formed after printing. As can be seen from Fig. 6(b), the surface structure of the soft template after 10 times of use is substantially unchanged and the structure is complete, compared with the pattern 6 (a) before use, indicating the ultraviolet photoresist provided by the present invention. The use of the composition as a soft template has excellent mold release efficiency and can improve the utilization of the soft form. The present invention relates to a compound of the formula (1), a compound using the compound of the formula (1), and the use of the composition as a soft template in an imprinting process, using the compound (1) and the formula The composition system of the compound (2) is uniform in transparency, good in stability, good in storage property, and also because it has a low viscosity and is convenient for spin coating, and can be ideally applied to an imprint process operation, and the pair is lowered. Damage to the quartz template.
另外, 该组合物还可以应用于压印的软模板的制备中, 所制得的压印的软模 板具有较大的静态水接触角, 所以具有超强的疏水性能。 另外还因为具有很小的表 面能, 所以具有高脱模性, 可以表现在石英板 1的图形可以很好地复制在软模板 上, 还同时可以表现用该软模板可以压印出无缺陷, 表面无剥离, 结构完整的图 形, 所以, 该软模板具有优异的技术效果。 另外, 该组合物所制得的压印的软模板 具有较高的机械强度, 便于反复多次压印使用且无需再次进行修饰, 提高了软模板 的使用率, 与现有的光刻胶所制得的软模板相比, 其显著的技术效果主要体现在: In addition, the composition can also be applied to the preparation of embossed soft stencils, and the embossed soft stencils produced have a large static water contact angle, so that they have superior hydrophobic properties. In addition, because of its small surface energy, it has high mold release property, and the pattern of the quartz plate 1 can be well reproduced on the soft template, and at the same time, it can be expressed that the soft template can be imprinted without defects. The surface has no peeling and a structurally complete pattern, so the soft template has excellent technical effects. In addition, the embossed soft template prepared by the composition has high mechanical strength, is convenient for repeated embossing and does not need to be modified again, and improves the use rate of the soft stencil, and the existing photoresist Compared with the soft template produced, its remarkable technical effects are mainly reflected in:
1.光刻胶粘度较低, 便于旋涂涂覆与压印工艺操作。 1. The photoresist has a low viscosity, which is convenient for spin coating and imprint process operations.
2.软模板机械强度较高, 耐磨损, 提高了模板的使用率。  2. The soft template has high mechanical strength and wear resistance, which improves the use rate of the template.
3.软模板的低表面能有助于提高脱模效率, 且模板表面无需进一步的修饰, 所制得的压印图形无缺陷, 表面无剥离, 结构完整。  3. The low surface energy of the soft template helps to improve the demolding efficiency, and the surface of the template does not need further modification. The obtained embossed pattern has no defects, no peeling on the surface and complete structure.

Claims

1.一种通式(1 )所示的含巯基多官能团的低倍多聚硅氧垸化合物, ( SiOL 5Ri ) m · ( Si01 5CH2CH2C SR2 ) n (1) A fluorenyl-containing polyfunctional group-containing low-poly polysiloxane compound represented by the formula (1), (SiO L 5 Ri ) m · (Si0 1 5 CH 2 CH 2 C SR 2 ) n (1)
其中!^为- CH2- CH2-CH2- SH, m表示 3〜12的整数; R2分别为无取代或者被取代基 取代的垸基、 无取代或者被取代基取代的酯基和无取代或者被取代基取代的芳香基, 所述取代基为卤素原子或硅原子, n表示 1〜12的整数。 among them! ^ Is - CH 2 - CH 2 -CH 2 - SH, m represents an integer of 3~12; R 2 are unsubstituted or substituted alkyl with the substituent group, unsubstituted or substituted with an ester group and an unsubstituted Or an aromatic group substituted with a substituent, wherein the substituent is a halogen atom or a silicon atom, and n represents an integer of 1 to 12.
2.如权利要求 1所述的化合物, 其特征在于, 分别为无取代或者被取代基取 代的 ( CW烷基、 无取代或者被取代基取代的 C3- C15酯基或者无取代或者被取代基取 代的 C6- C2Q芳香基, 所述的取代基为氟原子、 氯原子、 溴原子、 碘原子或者硅原子。 The compound according to claim 1, which is unsubstituted or substituted by a C W alkyl group, an unsubstituted or substituted C 3 -C 15 ester group, or an unsubstituted or The C 6 -C 2Q aryl group substituted by a substituent which is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or a silicon atom.
3.如权利要求 2所述的化合物, 其特征在于, 所述的 C3-C15酯基是被氟取代的 C3-C15酯基。 The compound according to claim 2, wherein the C 3 -C 15 ester group is a C 3 -C 15 ester group substituted by fluorine.
4. 如权利要求 3所述的化合物, 其特征在于, 所述的被氟取代的 C3-C15酯基 为, 丙酸 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8-十三氟代辛酯基或 2-甲基-丙酸 The compound according to claim 3, wherein the fluorine-substituted C 3 -C 15 ester group is propionic acid 3, 3, 4, 4, 5, 5, 6, 6, 7 , 7, 8, 8, 8-tridecafluorooctyl or 2-methyl-propionic acid
2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7-十二氟代庚酯基。  2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7-dodefluoroheptyl ester.
5.如权利要求 2所述的化合物, 其特征在于, 所述的 C6- C2。芳香基是笨乙基。The compound according to claim 2, wherein the C 6 - C 2 is . The aromatic group is a stupid ethyl group.
6.如权利要求 2所述的化合物, 其特征在于, 所述 d-C,。垸基为被氟取代的The compound according to claim 2, wherein the d-C,. Sulfhydryl is replaced by fluorine
Cio院基。 Cio Academy.
7.如权利要求 6所述的化合物, 其特征在于, 所述的被氟取代的 d- 。烷基是 1, 1 , 1 , 2 , 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-十七氟代癸基。  The compound according to claim 6, wherein the d- is substituted by fluorine. The alkyl group is 1, 1 , 1 , 2 , 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8-heptadecyfluorenyl.
8. 一种用于制备压印工序中的软模板的组合物, 包含权利要求 1一 7所示的化 合物。  A composition for preparing a soft template in an imprint process, comprising the compound of claim 1-7.
9.如权利要求 8所述的组合物, 还包含通式 (2)的化合物、 交联剂和光引发 剂,  The composition according to claim 8, further comprising a compound of the formula (2), a crosslinking agent and a photoinitiator,
CHR CR2R3 (2) CHR CR 2 R 3 (2)
通式(2)中的 、 R2和 R3分别为氢原子、 d-C2。烷基、 d-C2。烷氧基、 C6- C2。芳香 基、 (^(:2。酉旨基、 C3-C2。环垸基、 C3-C2。酰亚胺类基团, 所述通式 (2)可以被卤素原子或 者硅原子取代。 In the general formula (2), R 2 and R 3 are each a hydrogen atom and dC 2 . Alkyl, dC 2 . Alkoxy, C 6 - C 2 . An aryl group, (^(: 2酉 基, C 3 -C 2 . Cyclodecyl, C 3 -C 2 . imide group, the formula (2) may be a halogen atom or a silicon atom Replace.
10.如权利要求 9所述的组合物, 其特征在于, 所述通式 (2)的化合物为选自 C3-C15烯烃、 C3- C15乙烯基醚、 C3-C15乙烯基酰胺, C3-C2。 (甲基) 丙烯酸酯, 所述取代基 为氟原子或者硅原子。 The composition according to claim 9, wherein the compound of the formula (2) is selected from the group consisting of C 3 -C 15 olefins, C 3 - C 15 vinyl ethers, C 3 -C 15 ethylene Carboxamide, C 3 -C 2 . (Meth) acrylate, the substituent being a fluorine atom or a silicon atom.
11.如权利要求 10所述的组合物, 其特征在于, 所述 C3-C15烯烃选自 1-丁烯、The composition according to claim 10, wherein the C 3 -C 15 olefin is selected from the group consisting of 1-butene,
1-己烯、 1-庚烯、 全氟己烯、 全氟庚烯或者偏氟庚烯; 所述 c3- c15乙烯基醚选自乙烯 基乙醚、 乙烯基丁醚、 乙烯基己二醇醚, 2, 2, 2-三氟乙基乙烯醚或者 2-全氟丙氧基 全氟丙基三氟乙烯基醚; 所述 C3- C2。 (甲基) 丙烯酸酯选自丁烯酸酯、 甲基丙烯酸苄 酯、 苯氧基乙二醇丙烯酸酯、 1H,1H,2H,2H-全氟辛醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸 醇丙烯酸酯或者 1H, 1H, 7H-十二氟庚基甲基丙烯酸酯。 1-hexene, 1-heptene, perfluorohexene, perfluoroheptene or fluorohexylene; the c 3 - c 15 vinyl ether is selected from the group consisting of vinyl ethyl ether, vinyl butyl ether, vinyl hexan Alcohol ether, 2, 2, 2-trifluoroethyl vinyl ether or 2-perfluoropropoxy perfluoropropyl trifluorovinyl ether; said C 3 - C 2 . (Meth)acrylate is selected from crotonate, benzyl methacrylate, phenoxyethylene glycol acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 1H, 1H, 2H, 2H - Perfluorodecyl acrylate or 1H, 1H, 7H-dodecafluoroheptyl methacrylate.
12.如权利要求 9一 11中任一项所述的组合物, 其特征在于, 所述通式 (2)的化 合物是甲基丙烯酸苄酯, 1H,1H,2H,2H-全氟辛醇丙烯酸酯, 1H, 1H, 2H, 2H-全氟癸醇丙 烯酸酯。  The composition according to any one of claims 9 to 11, wherein the compound of the formula (2) is benzyl methacrylate, 1H, 1H, 2H, 2H-perfluorooctyl alcohol Acrylate, 1H, 1H, 2H, 2H-perfluorononanol acrylate.
13.如权利要求 9所述的紫外光刻胶组合物, 其特征在于, 所述交联剂选自 1, 4 -丁二烯、 2,5-二甲基 - 1,5-己二烯 - 3-醇、 全氟己二烯、 1,3-二乙烯 - 1,1,3,3-四甲 基二硅氧垸、 新戊二醇二丙烯酸酯、 1, 6-己二醇二丙烯酸酯、 二丙二醇二丙烯酸 酯、 1, 6-二(丙烯酰氧基 ) -2, 2, 3, 3, 4, 4, 5, 5 -八氟己烷、 1, 5-二(丙烯酰氧基) - The ultraviolet photoresist composition according to claim 9, wherein the crosslinking agent is selected from the group consisting of 1, 4-butadiene and 2,5-dimethyl-1,5-hexadiene. - 3-alcohol, perfluorohexadiene, 1,3-diethylene-1,1,3,3-tetramethyldisiloxane, neopentyl glycol diacrylate, 1,6-hexanediol Acrylate, dipropylene glycol diacrylate, 1,6-bis(acryloyloxy)-2,2,3,3,4,4,5,5-octafluorohexane, 1, 5-di(acryloyl) Oxy) -
2, 2, 3, 3, 4, 4-六氟戊垸、 三羟甲基丙垸三甲基丙烯酸酯, 三羟甲基丙垸三丙烯酸酯。 2, 2, 3, 3, 4, 4-hexafluoropentafluorene, trishydroxymethylpropionate trimethacrylate, trishydroxymethylpropionate triacrylate.
14.如权利要求 8— 13所述的组合物, 其特征在于, 所述通式(1)的化合物为 5〜65 质量%, 通式(2)的化合物为 10〜60 质量%, 交联剂为 5〜45 质量%, 光引 发剂为 0. 3〜3 质量%, 各组分的质量之和为 100%。  The composition according to any one of claims 8 to 13, wherein the compound of the formula (1) is 5 to 65 mass%, and the compound of the formula (2) is 10 to 60 mass%, crosslinked. The agent is 5 to 45 mass%, the photoinitiator is 0.3 to 3 mass%, and the sum of the masses of the components is 100%.
15.压印的软模板, 其特征在于, 由权利要求 8— 14中任一项所述的紫外光刻 胶组合物所形成。  An embossed soft stencil characterized by being formed by the ultraviolet ray resist composition according to any one of claims 8-14.
16. 压印的软模板的制备方法, 其特征在于, 其包括如下步骤:  16. A method of preparing an embossed soft template, comprising the steps of:
(1) .修饰衬底石英片(3) ;  (1). Modified substrate quartz plate (3);
(2) .将权利要求 8— 14中任一项的组合物的压印紫外光刻胶 (2)旋转涂膜在所 述修饰过的石英片(3)表面上, 其条件是: 以 300 rpm旋转涂膜 10秒后, 再以 3000 rpm旋转涂膜 20秒, 得到的膜厚为 750± 5 nm; (2) The embossed UV photoresist (2) of the composition of any one of claims 8 to 14 is spin-coated on the surface of the modified quartz plate (3) under the following conditions: After rotating the coating film for 10 seconds at rpm, the coating film was rotated at 3000 rpm for 20 seconds to obtain a film thickness of 750 ± 5 nm .
(3) .将带有紫外光刻胶 (2)的石英片(3), 与石英模板(1)进行接触, 放入压印 机中, 抽真空 3分钟, 给石英模板(1)施加 100N的压力, 紫外曝光 3分钟, 待光刻胶 固化后, 进行脱模, 再在 ioo°c下继续老化 1 小时, 老化后的聚合物作为压印的软模 板使用, 形成了软模板 (4)。 (3). The quartz plate (3) with the UV photoresist (2) is brought into contact with the quartz template (1), placed in an imprinting machine, evacuated for 3 minutes, and 100 N is applied to the quartz template (1). Pressure, UV exposure for 3 minutes, to be photoresist After curing, demolding was carried out, and aging was continued for 1 hour at ioo °c. The aged polymer was used as an embossed soft template to form a soft template (4).
17. 压印光刻胶的工艺及其所制得的压印图形, 其特征在于, 使用了权利要求 15的软模板。  17. A process for imprinting a photoresist and an embossed pattern produced thereby, characterized in that the soft template of claim 15 is used.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015071741A (en) * 2013-09-04 2015-04-16 Jsr株式会社 Curable composition, nano imprint material, cured film, laminate, method of producing cured film, pattern formation method, and semiconductor light-emitting element substrate
JP2017501568A (en) * 2013-11-29 2017-01-12 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Stamper with stamper structure and method for manufacturing the same
JP2018505288A (en) * 2014-12-10 2018-02-22 ヨアネウム・リサーチ・フォーシュングスゲゼルシャフト・エムベーハー Polymer compositions or prepolymer compositions or embossed paints comprising such compositions and the use of embossed paints
US9981419B2 (en) 2013-06-19 2018-05-29 Ev Group E. Thallner Gmbh Embossing compound for embossing lithography
JP2018166222A (en) * 2018-07-13 2018-10-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Stamper having stamper structure and manufacturing method thereof
US11370888B2 (en) 2016-06-16 2022-06-28 Dow Silicones Corporation Silicon-rich silsesquioxane resins

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103279009B (en) * 2013-06-14 2015-09-30 中国科学院光电技术研究所 A kind of flexible ultraviolet impressing composite shuttering and preparation method thereof
WO2019116204A1 (en) * 2017-12-14 2019-06-20 3M Innovative Properties Company Siloxane-based dual-cure transparent transfer film
CN111944149A (en) * 2019-12-10 2020-11-17 上海函泰电子科技有限公司 Cage type polysilsesquioxane oligomer, imprinting type photoresist and preparation method thereof
JPWO2023074312A1 (en) * 2021-11-01 2023-05-04
DE102021130504A1 (en) * 2021-11-22 2023-05-25 Delo Industrie Klebstoffe Gmbh & Co. Kgaa Radiation-curable stamping compound, use of the compound and method for producing patterned products
CN116333317A (en) * 2023-02-22 2023-06-27 安徽中烟工业有限责任公司 POSS-based hydrophobic material and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110062619A1 (en) * 2009-02-13 2011-03-17 Mayaterials, Inc. Silsesquioxane derived hard, hydrophobic and thermally stable thin films and coatings for tailorable protective and multi-structured surfaces and interfaces
CN102174059A (en) * 2011-02-23 2011-09-07 上海交通大学 Sulfydryl-containing low polysiloxane compound, ultraviolet photoresist composition thereof, and impressing process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7433118B2 (en) * 2003-06-26 2008-10-07 Lucent Technologies Inc. Bridged polysesquioxane host matrices containing lanthanides chelated by organic guest ligands, and methods of making such matrices
CN101348385B (en) * 2008-08-22 2010-09-08 东华大学 Preparation of uniform nano-porous SiO2 low dielectric film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110062619A1 (en) * 2009-02-13 2011-03-17 Mayaterials, Inc. Silsesquioxane derived hard, hydrophobic and thermally stable thin films and coatings for tailorable protective and multi-structured surfaces and interfaces
CN102174059A (en) * 2011-02-23 2011-09-07 上海交通大学 Sulfydryl-containing low polysiloxane compound, ultraviolet photoresist composition thereof, and impressing process

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HONG LIN ET AL.: "A ''thiol-ene'' photo-curable hybrid fluorinated resist for the high-performance replica mold of nanoimprint lithography (NIL)", J. MATER. CHEM., vol. 22, 20 December 2011 (2011-12-20), pages 2616 - 2623, XP055065838 *
JIANWEI XU ET AL.: "Polyhedral oligomeric silsesquioxanes tethered with perfluoroalkylthioether corner groups: Facile synthesis and enhancement of hydrophobicity of their polymer blends", J. MATER. CHEM., vol. 19, 27 May 2009 (2009-05-27), pages 4740 - 4745, XP055065840 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9981419B2 (en) 2013-06-19 2018-05-29 Ev Group E. Thallner Gmbh Embossing compound for embossing lithography
US10589457B2 (en) 2013-06-19 2020-03-17 Ev Group E. Thallner Gmbh Embossing compound for embossing lithography
JP2015071741A (en) * 2013-09-04 2015-04-16 Jsr株式会社 Curable composition, nano imprint material, cured film, laminate, method of producing cured film, pattern formation method, and semiconductor light-emitting element substrate
JP2017501568A (en) * 2013-11-29 2017-01-12 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Stamper with stamper structure and method for manufacturing the same
JP2018505288A (en) * 2014-12-10 2018-02-22 ヨアネウム・リサーチ・フォーシュングスゲゼルシャフト・エムベーハー Polymer compositions or prepolymer compositions or embossed paints comprising such compositions and the use of embossed paints
US11370888B2 (en) 2016-06-16 2022-06-28 Dow Silicones Corporation Silicon-rich silsesquioxane resins
JP2018166222A (en) * 2018-07-13 2018-10-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Stamper having stamper structure and manufacturing method thereof

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