WO2013059670A2 - Pointes octaédriques et de pyramide sur montant pour microscopie et lithographie - Google Patents
Pointes octaédriques et de pyramide sur montant pour microscopie et lithographie Download PDFInfo
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- WO2013059670A2 WO2013059670A2 PCT/US2012/061132 US2012061132W WO2013059670A2 WO 2013059670 A2 WO2013059670 A2 WO 2013059670A2 US 2012061132 W US2012061132 W US 2012061132W WO 2013059670 A2 WO2013059670 A2 WO 2013059670A2
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- tip
- cantilever
- octahedral
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- forming
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/16—Probe manufacture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Definitions
- Microscale tips and nanoscale tips can be used for high resolution patterning, imaging, and data storage.
- an ink or patterning compound can be transferred from the tip to a surface such as a substrate surface.
- the tip can be a scanning probe microscope (SPM) tip, such as an atomic force microscope (AFM) tip, attached to one end of a cantilever or a larger support structure.
- SPM scanning probe microscope
- AFM atomic force microscope
- DPN Dip-Pen Nanolithography
- DPN Dip-Pen Nanolithography
- tips can be used without cantilevers to support the tips.
- Pens used for patterning and printing may be formed as cantilevers having pyramidal tips. Such pens can be fabricated by first defining a square opening in a suitable masking material, such as silicon dioxide or silicon nitride, on the surface of an oriented silicon mold wafer. The wafer is then immersed in a crystallographic etchant such as potassium hydroxide (KOH), resulting in pyramidal pits within the mask openings. These pits serve as a tip mold for low stress silicon nitride or other material subsequently deposited, typically by chemical vapor deposition.
- KOH potassium hydroxide
- Silicon nitride with low stress gradient can be then deposited onto the mold wafer to form a cantilever and tip.
- the nitride thickness may be about 600 nm.
- a handle wafer typically made of Pyrex or borosilicate glass, may be bonded to the surface of the silicon nitride, and the silicon mold wafer is etched away, typically with KOH or tetramethylammonium hydroxide (TMAH). This results in a free-standing cantilever with a pyramidal tip, the cantilever extending from the handle wafer.
- TMAH tetramethylammonium hydroxide
- the tip radius can be reduced even further with an additional oxidation step.
- the masking oxide can then be stripped and the wafers re-oxidized at 950°C for 180 minutes to grow about 5,50 ⁇ of silicon oxide.
- the oxide at the bottom of the pit is hindered with respect to growth, and thus when a cast film is deposited in this pit, the tip sharpness can approach a 10 nm tip radius or smaller.
- Such pens are described, for example, in T. R. Albrecht, S. Akamine, T. E. Carver, and C. F. Quate, "Micro fabrication of cantilever styli for the atomic force microscope,” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), 1990; and S. Akamine, and C. F. Quate, "Low temperature oxidation sharpening of microcast tips,” J. Vac. Sci. Technol B., vol. 10, No. 5, Sep/Oct 1992.
- the shape and height of the tips formed by this process are limited by the crystallographic etching step. Since the pyramidal tip is bounded by four planes inclined at 54.74 degrees (due to the crystallographic etching), the tip height is limited and equal to 0.71 times the base dimension of the square defined in the mask.
- Embodiments described herein include devices and instruments, and methods of making and using such devices and instruments.
- a device comprises a cantilever; and an octahedral tip extending from a bottom surface of the cantilever.
- the octahedral tip comprises a top portion at which the octahedral tip is attached to the cantilever, a bottom portion comprising a first vertex, and a middle portion disposed between the top portion and the bottom portion, the middle portion comprising four additional vertices and being wider than the top portion and the bottom portion.
- a device in another embodiment, comprises a cantilever; and a tip extending from a bottom surface of the cantilever.
- the tip comprising an elongated post portion and a pyramidal portion located at one end of the elongated post portion.
- the cantilever and the tip are formed of a continuous layer of material having a thickness between 400 nm and 1000 nm.
- a method comprises providing a silicon mold wafer
- a vertical pit in the silicon mold wafer using reactive ion etching forming an octahedral pit from the vertical pit using crystallographic etching, the octahedral pit comprising a top portion near a top surface of the silicon mold wafer, a bottom portion comprising a first vertex, and a middle portion disposed between the top portion and the bottom portion, the middle portion comprising four additional vertices and being wider than the top portion and the bottom portion; and forming a cantilever and an octahedral tip by depositing a deposition material on a portion of the top surface of the silicon mold wafer and on an inner surface of the octahedral pit.
- a method comprises providing a silicon mold wafer
- a vertical pit in the silicon mold wafer using reactive ion etching forming an oxide layer on side and bottom surfaces of the vertical pit; removing the oxide layer from the bottom surface of the vertical pit; forming a pyramidal pit in the bottom surface of the vertical pit using crystallographic etching; and forming a cantilever and a tip by depositing a deposition material on a portion of a top surface of the silicon mold wafer and on inner surfaces of the vertical pit and the pyramidal pit.
- a method comprises providing a device comprising a cantilever; and an octahedral tip extending from a bottom surface of the cantilever.
- the octahedral tip comprises a top portion at which the octahedral tip is attached to the cantilever, a bottom portion comprising a first vertex, and a middle portion disposed between the top portion and the bottom portion, the middle portion comprising four additional vertices and being wider than the top portion and the bottom portion.
- the method further comprises transferring an ink or patterning compound from the octahedral tip to a substrate surface.
- a method comprises providing a device comprising a cantilever; and a tip extending from a bottom surface of the cantilever, the tip comprising an elongated post portion and a pyramidal portion located at one end of the elongated post portion.
- the cantilever and the tip are formed of a continuous layer of material having a thickness between 400 nm and 1000 nm.
- the method further comprises transferring an ink or patterning compound from the tip to a substrate surface.
- a device with the octahedral tip provides several advantages over prior art devices with, for example, pyramidal tips.
- One advantage for at least one embodiment is that the height of the octahedral tip is not limited by the base dimension of the square defined in the masking layer. Instead, the use of two different etching process—for example, a reactive ion etch process following by a crystallographic etch process— removes the previous restraints on tip height. Using an octahedral tip, the tip height is limited only by the depth achieved during the reactive ion etching process.
- the resulting mold takes the form of an irregular octahedron with a height of d + 0.71w, wherein d is the depth of the pit etched by reactive ion etching, and w is the width of the opening in the masking layer.
- octahedral tips include four side vertices, which can be used in various applications.
- the side vertices may be used in atomic force microscopy to profile surfaces that are vertical relative to the cantilever.
- the side vertices may also be used in nanolithography applications to transfer ink from the side vertices to surfaces that are vertical relative to the cantilever.
- a third advantage for at least some embodiments is that the octahedral tips have a larger surface area than typical pyramidal tips, and can therefore hold more ink than pyramidal tips, allowing for more efficient patterning of the ink onto a substrate surface.
- FIG. 1 is a process flow diagram showing a method of manufacturing a cantilever with an octahedral tip according to one embodiment.
- FIG. 2 is a top, front perspective view of an octahedral tip according to one embodiment.
- FIG. 3 depicts a process flow diagram showing a method of manufacturing a cantilever with a "pyramid-on-post" tip according to one embodiment.
- FIG. 4 is a top, front perspective view of a "pyramid-on-post" tip according to one embodiment.
- FIG. 5 is a front, cross-sectional view of a mold wafer with pits that can be used during manufacturing of the "pyramid-on-post" tip depicted in FIG. 3.
- FIG. 6A is an SEM image showing a front, bottom perspective view of an octahedral tip attached to a triangular cantilever that was made according to one embodiment.
- FIG. 6B is an SEM image showing a front, bottom perspective view of an octahedral tip attached to a triangular cantilever that was made according to one embodiment, where the tip is slightly shorter than the tip shown in FIG. 6A.
- FIG. 6C is an SEM image showing a close-up side view of a side vertex of an octahedral tip that was made according to one embodiment.
- FIG. 7A is an SEM image showing a rear, side, bottom perspective view of a "pyramid-on-post" tip attached to a triangular cantilever that was made according to one embodiment.
- FIG. 7B is an SEM image showing a front, bottom perspective view of a "pyramid- on-post" tip attached to a triangular cantilever that was made according to one embodiment.
- FIG. 7C is an SEM image showing a front, bottom perspective view of a "pyramid- on-post" tip attached to a triangular cantilever that was made according to one embodiment, where a pyramid portion of the tip extends past a post portion of the tip.
- microlithography, and nanolithography instruments pen arrays, active pens, passive pens, inks, patterning compounds, kits, ink delivery, software, and accessories for direct-write printing and patterning can be obtained from Nanolnk, Inc., Skokie, IL.
- Instrumentation includes, for example, the NSCRIPTOR and DPN5000.
- Software includes, for example, INKCAD software (Nanolnk, Chicago, IL), providing user interface for lithography design and control. E-Chamber can be used for environmental control. Dip Pen Nanolithography ® and DPN ® are trademarks of Nanolnk, Inc.
- U.S. Patent No. 6,635,311 to Mirkin et al which describes fundamental aspects of DPN printing including inks, tips, substrates, and other instrumentation parameters and patterning methods
- U.S. Patent No. 6,827,979 to Mirkin et al. which further describes fundamental aspects of DPN printing including software control, etching procedures, nanoplotters, and complex and combinatorial array formation.
- Direct write methods including DPN printing and pattern transfer methods, are described in for example Direct-Write Technologies, Sensors, Electronics, and Integrated Power Sources, Pique and Chrisey (Eds), 2002.
- Microfabrication methods are described in for example Madou, Fundamentals of Microfabrication, 2 nd Ed., 2002, and also Van Zant, Microchip Fabrication, 5 th Ed., 2004.
- US Patent Publication 2003/0022470 and Publication 2006/0228873 to Liu et al. describe cantilever fabrication methods.
- US Patent Publication 2006/0040057 to King, Sheehan et al. describes thermal DPN printing methods.
- a device comprises a cantilever and an octahedral tip extending from a bottom surface of the cantilever.
- Figs. 1(a) through 1(h) are cross-sectional views taken along a central axis of the cantilever and octahedral tip.
- a mold wafer 110 is provided.
- the mold wafer 110 may be made of a crystalline material such that anisotropic etching may be performed on the mold wafer.
- the mold wafer 110 may be made of single crystalline silicon.
- Other possible materials for the mold wafer include
- a masking layer 112 is formed on the surface of the oriented a mold wafer 110.
- the masking layer 112 is preferably formed using contact or projection optical lithography, though other methods, such as electron-beam and x-ray lithography, may be used.
- the masking layer 112 may be, for example, a thin film of silicon dioxide or silicon nitride.
- masking layer materials include gold, chrome, aluminum oxide, and boron nitride.
- the thickness of the masking layer may be, for example, between 5000 and 5500 A.
- An opening 114 is formed in the masking layer 112 such that a portion of the mold wafer 110 is exposed.
- the opening 114 is preferably square.
- the openings can be of any size. For example, they can be between about 1 micron to about 60 microns, or between about 2 microns to about 50 microns.
- an anisotropic etching process is performed using the masking layer 112 as an etching mask to form a vertical pit 116.
- the vertical pit 116 may be formed using reactive ion etching (RIE).
- RIE reactive ion etching
- an STS Inductively Coupled (ICP) RIE system may be used with 40 seem SF 6 , 40 seem 0 2 , a platen power of 10 watts, a coil power of 500 watts, a pressure of about 20 mTorr, and no parameter switching.
- processing gases used during this etching process include SF 6 , CF 4 , NF 3 , Cl 2 , and Br 2 .
- a Bosch process may be employed in which alternating etch and passivation cycles are used.
- the vertical pit 116 has the shape of a right rectangular prism with four side surfaces 118 and a bottom surface 120.
- a crystallographic wet etching process is performed so as to etch an ansiotropically octahedral pit 122.
- the mold wafer 110 may be immersed in a wet etchant such as potassium hydroxide (KOH), tetramethyl ammonium hydroxide (TMAH), or an aqueous solution of ethylene diamine and pyrocatechol (EDP).
- KOH potassium hydroxide
- TMAH tetramethyl ammonium hydroxide
- EDP aqueous solution of ethylene diamine and pyrocatechol
- the mold wafer when the mold wafer is oriented in specific manner, it becomes possible to create an octahedral pit 122, with five vertices.
- the mold wafer may be sliced on the (100) plane, with the mask opening aligned with the (110) oriented flat of the wafer.
- a top portion 124 of the octahedral pit 122 is the portion near the top surface of the mold wafer 110, through which the wet etchant enters the vertical pit 116 to form the octahedral pit 122.
- the bottom portion 126 of the octahedral pit 122 contains a first, bottom vertex 128.
- the middle portion 130 of the octahedral pit 122 is the portion between the top portion 124 and bottom portion 126, and contains four side vertices 132.
- the middle portion 130 is wider than the top portion 124 and the bottom portion 126.
- the four side vertices 132 may form a square in a plane that is parallel to the plane of the top surface of the mold wafer 110.
- the masking layer 112 is stripped from the surface of the mold wafer 110.
- the mold wafer 110 may then optionally be oxidized at a temperature between 950° C and 1100° C for about six hours to grow a tip-sharpening oxidation layer 134 of silicon dioxide on the inner surfaces of the octahedral pit 122.
- the oxide at the bottom of the pit is hindered with respect to growth, and thus when a cast film is deposited in this pit, the tip sharpness can approach a 10 nm tip radius or smaller.
- the tip-sharpening oxidation layer 134 may have a thickness of about 3900 A.
- a deposition material layer 136 is then formed on the inner surfaces of the octahedral pit 122 and on the top surface of the mold wafer 110.
- the deposition material layer 136 will form the cantilever and octahedral tip.
- the deposition material layer 136 may, for example, be made of silicon nitride or silicon carbide.
- the deposition material layer 136 may have a thickness of about 400 to 1000 nm, and preferably between 500 nm and 700 nm, more preferably about 600 nm.
- the deposition material layer 136 is patterned and aligned such that the end of the cantilever lies over the octahedral pit 122.
- the deposition material layer 136 may, for example, be deposited using chemical vapor deposition (CVD), sputtering, evaporation, or plating.
- CVD chemical vapor deposition
- sputtering evaporation
- plating evaporation
- a typical low stress silicon nitride LPCVD process may use 95 seem Dichlorosilane, and 200 seem
- a handle wafer 138 may then optionally be bonded to the deposition material layer 126.
- the handle wafer 138 may, for example, be made of Pyrex or another borosilicate glass.
- the mold wafer 110 is etched away using, for example, KOH, TMAH, EDP, HF/HN0 3 , or XeF 2 , which results in a free-standing cantilever 140 with an tip 142 have the shape of an octahedron extending from a bottom surface of the cantilever 140.
- the octahedral tip 142 does not have the shape of a perfect octahedron. Rather, the top of the octahedron is truncated at the location where the octahedral tip 142 extends from the cantilever 140.
- the cantilever 140 and octahedral tip 142 are integral, both being made of the single layer of deposition material.
- the octahedral tip 142 has top portion 144, where the octahedral tip 142 is attached to the cantilever 140.
- the octahedral tip has a bottom portion 146 which includes a first, bottom vertex 148. Between the top portion 144 and the bottom portion 146 is a middle portion 150, which includes four side vertices 152, two of which are visible in Fig. 1(h).
- the middle portion 150 may be wider than the top portion and the bottom portion.
- the four side vertices 152 of the middle portion 150 may form a square in a plane that is parallel to the plane of the cantilever 140. Because the octahedral tip 142 and cantilever 140 are formed of a single thin layer of deposition material, the octahedral tip 142 is hollow.
- the width of the cantilever may be under 1000 microns, for example, about 25 microns.
- the length of the cantilever may also be under 1000 microns, for example, about 200 microns.
- the thickness of the cantilever may be between about 400 and 1000 nm, for example, about 600 nm.
- the octahedral tips may, for example, have a height between 5 and 20 microns and a width (between vertices) between 10 and 20 microns.
- FIG. 2 is a top, front perspective view of an octahedral tip according to one embodiment.
- a device comprises a cantilever and a "pyramid-on-post" tip extending from a bottom surface of the cantilever.
- the method of making the device is shown in Figs. 3(a) through 3(i).
- Figs. 3(a) through 3(i) are cross-sectional views taken along a central axis of the cantilever and octahedral tip.
- a mold wafer 210 is provided.
- the mold wafer 210 may be made of a crystalline material such that anisotropic etching may be performed on the mold wafer.
- the mold wafer 210 may be made of single crystalline silicon.
- a masking layer 212 is formed on the surface of the oriented a mold wafer 210.
- the masking layer 112 is preferably formed using contact or projection optical lithography, though other methods, such as electron-beam and x-ray lithography, may be used.
- the masking layer 112 may be, for example, a thin film of silicon dioxide or silicon nitride. Other possible masking layer materials include gold, chrome, aluminum oxide, and boron nitride. The thickness of the masking layer may be, for example, between 5000 and 5500 A.
- An opening 114 is formed in the masking layer 112 such that a portion of the mold wafer 110 is exposed.
- the opening 114 is preferably square.
- the openings can be of any size. For example, they can be between about 1 micron to about 60 microns, such as between about 2 microns to about 50 microns.
- an anisotropic etching process is performed using the masking layer 112 as an etching mask to form a vertical pit 116.
- the vertical pit 116 may be formed using reactive ion etching (RIE).
- RIE reactive ion etching
- ICP STS Inductively Coupled
- the vertical pit 116 has the shape of a right rectangular prism with four side surfaces 118 and a bottom surface 120.
- an oxide layer 222 is grown on the inner surfaces of the vertical pit 216.
- the oxide layer may be grown in steam at a temperature of about 1100° C.
- the oxide layer 222 is removed from the bottom surface 220 of the vertical pit 216 using reactive ion etching, but remains on the side surfaces 218 of the vertical pit 216. Because the top surface of the mold wafer 210 already has a masking layer 212, when the oxide layer 222 is grown, the masking layer 212 on the top surface of the mold wafer 210 is thicker than the oxide layer 222 on the side and bottom surfaces of the vertical pit 216.
- an STS Inductively Coupled (ICP) RIE system may be used with 100 seem CF 6 , 45 seem 0 2 , a platen power of 12 watts, a coil power of 800 watts, a pressure of about 50 mTorr, and no parameter switching
- a crystallographic wet etching process is performed so as to etch an ansiotropically pyramidal pit 224.
- the mold wafer 110 may be immersed in a wet etchant such as KOH, TMAH, or EDP.
- a wet etchant such as KOH, TMAH, or EDP.
- the rate at which etching occurs depends on the orientation of the crystalline mold wafer.
- the side surfaces 218 are protected from the wet etchant by the oxide layer 222, a pyramidal pit 224 can be formed in the bottom surface 220 of the vertical pit 216. To do this, the mold wafer may be sliced on the (100) plane.
- the masking layer 212 and oxide layer 222 are stripped from the top surface of the mold wafer 210 and the side surfaces 218 of the vertical pit 216.
- the mold wafer 210 may then optionally be oxidized at 950° C for about six hours to grow a tip-sharpening oxidation layer 228 of silicon dioxide on the inner surfaces of the vertical pit 216 and pyramidal pit 224.
- the oxide at the bottom of the pit is hindered with respect to growth, and thus when a cast film is deposited in this pit, the tip sharpness can approach a 10 nm tip radius or smaller.
- the tip-sharpening oxidation layer 228 may have a thickness of about 3900 A.
- a deposition material layer 230 is then formed on the inner surfaces of the vertical pit 216 and pyramidal pit 224 and on the top surface of the mold wafer 210.
- the deposition material layer 230 will form the cantilever and pyramid- on-post tip.
- the deposition material layer 230 may, for example, be made of silicon nitride or silicon carbide.
- the deposition material layer 230 may have a thickness of about 400 to 1000 nm.
- the deposition material layer 230 is patterned and aligned such that the end of the cantilever lies over the vertical pit 216.
- the deposition material layer 136 may, for example, be deposited using chemical vapor deposition (CVD), sputtering, evaporation, or plating.
- a typical low stress silicon nitride LPCVD process may use 95 seem dichlorosilane, and 200 seem ammonia, at a temperature 775° C and a pressure of 200 mTorr.
- a handle wafer 232 may then optionally be bonded to the deposition material layer 230.
- the handle wafer 232 may, for example, be made of Pyrex or another borosilicate glass.
- the mold wafer 210 is etched away using, for example, KOH, TMAH, EDP, HF/HN0 3 , or XeF 2 , which results in a free-standing cantilever 234 with a pyramid-on-post tip 236 extending from a bottom surface of the cantilever 234.
- the cantilever 234 and pyramid-on-post tip 236 are integral, both being made of the single layer of deposition material.
- the resulting pyramid-on-post tip 236 has an elongated post portion 238 and a pyramidal portion 240 located on the bottom of the post portion 238.
- the pyramid-on-post tip 236 and cantilever 234 are formed of a single thin layer of deposition material, the pyramid-on-post tip 236 is hollow.
- the width of the cantilever may be under 1000 microns, for example, about 25 microns.
- the length of the cantilever may also be under 1000 microns, for example, about 200 microns.
- the thickness of the cantilever may be between about 400 and 1000 nm, for example, about 600 nm.
- the pyramid-on-post tips may, for example, have a height between 5 and 20 microns and width between 3 and 10 microns.
- FIG. 4 is a top, front perspective view of a "pyramid-on-post" tip according to one embodiment.
- FIG. 5 is a front, cross-sectional view of a mold wafer with pits that can be used during manufacturing of the "pyramid-on-post" tip depicted in FIG. 3.
- a device with the "pyramid-on-post" tip provides several advantages over prior art devices with, for example, pyramidal tips.
- one advantage for at least some embodiments is that the height of the pyramid-on post tip is not limited by the base dimension of the square defined in the masking layer.
- the use of two different etching process— for example, a reactive ion etch process following by a crystallo graphic etch process— removes the previous restraints on tip height.
- the tip height is limited only by the depth achieved during the reactive ion etching process.
- the resulting mold approximately takes the form of obelisk with a height of d + 0.71w, wherein d is the depth of the pit etched by reactive ion etching, and w is the width of the opening in the masking layer.
- pyramid-on-post tips have a larger surface area than typical pyramidal tips, and can therefore hold more ink than pyramidal tips, allowing for more efficient patterning of the ink onto a substrate surface.
- FIG. 6A is an SEM image showing a front, bottom perspective view of an octahedral tip attached to a triangular cantilever that was made according to one
- FIG. 6B is an SEM image showing a front, bottom perspective view of an octahedral tip attached to a triangular cantilever that was made according to one
- FIG. 6C is an SEM image showing a close-up side view of a side vertex of an octahedral tip that was made according to one embodiment.
- This side vertex can be used, for example, for imaging vertical surfaces with an atomic force microscope, or for patterning on vertical surfaces using, for example, direct write lithography.
- FIG. 7A is an SEM image showing a rear, side, bottom perspective view of a "pyramid-on-post" tip attached to a triangular cantilever that was made according to one embodiment.
- FIG. 7B is an SEM image showing a front, bottom perspective view of a "pyramid-on-post” tip attached to a triangular cantilever that was made according to one embodiment.
- FIG. 7C is an SEM image showing a front, bottom perspective view of a "pyramid-on-post” tip attached to a triangular cantilever that was made according to one embodiment, where a pyramid portion of the tip extends past a post portion of the tip.
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Abstract
Selon la présente invention, un dispositif comprend un porte-à-faux et une pointe octaédrique s'étendant depuis une surface inférieure du porte-à-faux. La pointe octaédrique comprend une partie supérieure à laquelle la pointe octaédrique est fixée au porte-à-faux, une partie inférieure comprenant un premier sommet et une partie intermédiaire disposée entre la partie supérieure et la partie inférieure, la partie intermédiaire comprenant quatre sommets additionnels et étant plus large que la partie supérieure et la partie inférieure. Un autre dispositif comprend un porte-à-faux et une pointe s'étendant depuis une surface inférieure du porte-à-faux. La pointe comprend une partie de montant allongée et une partie pyramidale située à une extrémité de la partie de montant allongée. Le porte-à-faux et la pointe sont formés d'une couche continue de matière ayant une épaisseur entre 400 nm et 1 000 nm.
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CN112062084A (zh) * | 2020-08-25 | 2020-12-11 | 华南理工大学 | 一种高分辨率的硅基中空悬臂探针及其制备方法 |
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