WO2013056875A1

WO2013056875A1 - Light-emitting component, and a method for producing a light-emitting component

Info

Publication number: WO2013056875A1
Application number: PCT/EP2012/066222
Authority: WO
Inventors: Philipp SCHWAMB; Daniel Steffen Setz
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2011-10-20
Filing date: 2012-10-15
Publication date: 2013-04-25
Also published as: DE102011084889A1

Abstract

The invention relates to a light-emitting component (200), in different embodiments, which comprises: a carrier (202) with at least one depression (204); a light out-coupling layer (208) in this depression (204); and an electrically-active region (216) arranged above or below this light out-coupling layer (208), said electrically-active region (216) comprising: a first electrode (218); a second electrode (220); and an organic, functional layer structure (222) between said first electrode (218) and second electrode (220).

Description

description

Light-emitting component and method for producing a light-emitting component

The invention relates to a light-emitting component and to a method for producing a light-emitting component. In an organic light emitting diode the light generated by the organic light emitting diode is partly coupled out directly from the or ganic ^¬ light emitting diode. The remaining light is ver ^¬ is divided into various channels loss, such as in a position Dar ^¬ an organic light emitting diode 100 in Fig.l ones shown, provides. Fig.l shows an organic light emitting diode 100 having a glass substrate 102 and disposed thereon a first transparent electrode layer 104, for example from Indi ^¬ to-tin-oxide (ITO). Arranged on the first electrode layer 104 is a first organic layer 106, on which an emitter layer 108 is arranged. On the emitter layer 108, a second organic layer 110 is disposed. Wei ^¬ thermore, attention must on the second organic layer 110, a second electrode layer 112, for example from a metal at ^¬ sorted. An electrical power supply 114 is connected to the first electrode layer 104 and the second electrode layer coupled ^¬ 112, so that an electric current for generating light by the disposed between the electrode layers 104, 112-layer structure is guided. A ers ^¬ ter arrow 116 symbolizes a transfer of electrical energy into surface plasmons in the second electrode layer 112. A further loss channel can be seen in absorption ^¬ losses in the light emission path (symboli ^¬ Siert means of a second arrow 118). Light which is not coupled out in a desired manner from the organic light-emitting diode 100 is, for example, a part of the light which arises due to a reflection of a part of the light generated at the interface of the glass carrier 102 to the air (symbolized by a third arrow 122) and due to a reflection. xion a portion of the light generated at the interface Zvi ^¬ rule the first electrode layer 104 and the glass substrate 102 (indicated by a fourth arrow 124). The part of the generated light decoupled from the glass carrier 102 is symbolized in FIG. 1 by means of a fifth arrow 120. Are Anschau ^¬ Lich thus for example the following loss channels EXISTING ^¬: generated light loss in the glass substrate 102, light loss in the organic layers and the transparent electrode 104, 106, 108, 110 as well as the metallic cathode (second electrode layer 112) surface plasmons. These light components can not be readily decoupled from the organic light emitting diode 100.

For coupling of carrier modes conventionally on the underside of the carrier of an organic light emitting diode so-called Auskoppelfolien be applied, which can emit the light from the optical carrier by means of shear ^¬ scattering or by means of micro-lenses. It is also known to structure the free carrier surface directly. However, such a method significantly affects the appearance of the organic light emitting diode. This results in ei ^¬ ne milky surface of the carrier.

In various embodiments, a light emitting device is provided, comprising a carrier having at least one recess; a light-outcoupling layer in the recess; and an electrically active region disposed above or below the light-outcoupling layer, the electrically-active region comprising: a first electrode; a second electrode; an organic functional Schich ^¬ tenstruktur between the first electrode and the second electrode.

In various embodiments, it has been clearly recognized that by providing a recess in the

Support is possible, even a light extraction layer or, for example, low-viscosity, possibly high ^¬ refractive material, reliable easily carrier seitust in a light emitting device bereitzustel ^¬ len. These materials can help improve the

Lichtauskopplung in the light emitting device, such as an organic light emitting diode (organic light emitting diode, OLED), are suitable.

In one embodiment, the light-outcoupling layer may comprise low-viscosity material. In yet another embodiment, the light-outcoupling layer may be a low-viscosity layer.

In yet one embodiment, the light extraction layer may have a viscosity of at most 1000 mPa * s, game as examples has a viscosity of 500 mPa * s, at ^¬ play a viscosity of 250 mPa * s, at ^¬ play a viscosity of at most 100 mPa * s, at ^¬ play a viscosity of 75 mPa * s, at ^¬ play a viscosity of at most 50 mPa * s.

In yet another embodiment, the light-outcoupling layer can be set up to increase the light extraction from the light-emitting component. In yet another embodiment, the light-outcoupling layer may be configured as a light-scattering layer.

In yet another embodiment, the light-scattering layer may comprise scattering particles.

In yet another embodiment, the light emitting device may further comprise a light diffractive structure and / or a refractive structure disposed in the recess.

In yet another embodiment, the diffractive structure and / or a refractive structure may be formed in the bottom of the recess. In yet another embodiment, the light-diffractive structure and / or a refractive structure may have a lens structure and / or a non-periodic structuring.

In yet another embodiment, the recess may have a depth in a range of about 1 ym to about 200 ym. In yet another embodiment, at least a part of the electrically active region can be arranged in the depression.

In yet another embodiment, the light-emitting component may further comprise a cover, which is arranged above the electrically active region.

In yet another embodiment, the light-emitting component may further comprise an encapsulation, which is arranged on the side of the electrically active region facing away from the carrier, above the electrically active region.

In yet another embodiment, the carrier can have or be a substrate of the light-emitting component and / or a cover of the light-emitting component.

In yet another embodiment, the light-emitting component can be configured as an organic light-emitting diode. In various embodiments, there is provided a method of fabricating a light emitting device, the method comprising: forming a recess in a carrier; forming a light-outcoupling layer in the recess; and forming an electrically active region above or below the light-outcoupling layer, wherein forming the electrically-active region comprises: forming a first electrode; forming a second electrode; and forming an organic func- thin layer structure between the first electrode and the second electrode.

The embodiments of the light-emitting component apply, as appropriate, according to the method for making Her a light-emitting device.

Embodiments of the invention are illustrated in FIGS Darge and are explained in more detail below.

Show it

Figure 1 is a cross-sectional view of a conventional light-emitting device ^¬;

Figure 2 is a cross-sectional view of a light-emitting construction element according to various embodiments;

Figure 3 is a cross-sectional view of a light-emitting construction element according to various embodiments;

Figure 4 is a cross-sectional view of a light-emitting construction elements according to various embodiments;

Figure 5 is a cross-sectional view of a light-emitting construction element according to various embodiments;

Figure 6 is a cross-sectional view of a light-emitting construction element according to various embodiments;

Figure 7 is a cross-sectional view of a light-emitting construction elements according to various embodiments;

Figure 8 is a cross-sectional view of a light-emitting construction element according to various embodiments;

Figure 9 is a cross-sectional view of a light-emitting construction element according to various embodiments; FIG. 10 is a flow chart illustrating a method of manufacturing a light-emitting device according to various embodiments; and

Figure 11 is a cross-sectional view of a light-emitting

Component according to various Ausführungsbeispie ^¬ len.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect one

Connection, direct or indirect connection and direct or indirect coupling. In the figures provide the identical or similar elements with identical reference ^¬ sign, as appropriate.

A light emitting device can exemplary embodiments in different versions be formed as an organic light-emitting transistor as an organic light emitting Dio ^¬ de (Organic Light Emitting Diode, OLED) or the like. The light emitting device may be in various designs ^¬ approximately examples part of an integrated circuit. WEI terhin may be provided by a plurality of light emitting devices, for example, housed in a common housing ^¬ ge.

In the various embodiments, various implementations of improved light extraction from a light emitting device are provided by, for example, self-scattering high refractive index layers and / or low viscosity high refractive index materials plus scattering structure.

2 shows a cross-sectional view of a light emitting device 200 according to various embodiments.

The light emitting device 200 in the form of an organic light emitting diode 200 may see a substrate having (as a ^¬ implemen tation of a wearer) 202nd The substrate 202 may, for example, serve as a carrier element for electronic Ele ^¬ elements or layers such as light-emitting elements ^¬ Ele. For example, the substrate 202 may include or be formed from glass, quartz, and / or a semiconductor material, or any other suitable material. Fer ^¬ ner, the substrate 202 may ^include or be formed from a plastic film or a Lami ^¬ nat with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate. nat (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. Further, the substrate 202 may have play in ^¬ a metal foil such as an aluminum foil, a stainless steel foil, a copper foil or a combination or stack layers thereof. The sub strate ^¬ 202 may include one or more of the above materials. The substrate 202 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is transparent to light, for example, ^¬ for the light generated by the light emitting device, for example, one or more ^{Wellenbeleberei ¬} surface, for example, for light in a wavelength range of visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, "translucent layer" in various exemplary embodiments, the term will be understood that substantially all in a structure (for example, egg ^¬ ne layer) is coupled out coupled light amount also from the structure (for example, layer) with a portion of the light is scattered in this case can be

The term "transparent" or "transparent layer" can be understood, in various embodiments, that a layer of light permeable (Example ^¬, at least in a partial area of the wavelength range of 380 nm to 780 nm), where (in a structure beispielswei ^¬ a layer) coupled-in light is coupled out without any scattering or light conversion from the structure (for example, layer). Thus, in various embodiments, "transpar ^¬ rent" as a special case of "translucent" to look at.

In the event that, for example, a light-emitting mo ^¬ still or limited in the emission spectrum electronic Component is to be provided, it is sufficient that the optically translucent layer structure is translucent at least in a portion of the wavelength range of the desired monochrome light or for the limited emission spectrum.

In various embodiments, the organic light-emitting diode 200 (or else the light-emitting components according to the embodiments described above or below) can be configured as a so-called top emitter and / or as a so-called bottom emitter. In various embodiments, a top emitter can be understood to mean an organic light-emitting diode in which the light is radiated upward from the organic light-emitting diode, for example through the second electrode, as will be explained in more detail below. In various embodiments, a bottom emitter can be understood to be an organic light-emitting diode in which the light is emitted from the organic light-emitting diode downwards, for example through the substrate and a first electrode, as will be explained in more detail below.

The substrate 202 may include a recess 204 (hereinafter also referred to as cavity 204) in various embodiments. The depression 204 may be or may be formed in the substrate 202 in different ways (for example, depending on the nature of the substrate 202). Thus beispielswei ^¬ se, with an embodiment of the substrate 202 in the form of a solid such as glass, quartz, and / or a semiconductor material, the depression 202 are formed by removing material of the solid is removed example ^¬ by means of an etching process. Alternatively, all of which can ^¬ form suitable processes are provided for forming the recess 204, for example, stamping, hot stamping (for example, advantageously be used in the event that the

Substrate 202 is a film) (also referred to as hot embossing process), etc. This can be done, for example, already in the production of the substrate 202. It is noted that in different execution ^¬ examples, a plurality, may basically be provided from any number of recesses 202, for example, a recess 202, in which the webs were allowed to stand within the recess 202, for example, in the context of an etching process.

In various embodiments, the recess 204 may have a depth (from the surface 210 of the sub ^¬ strats 202, from which the recess extends 204 in Figure 2 symbolized by means of a double arrow 206) ym comprise in a range from about 1 to about 200 ym, for example in a range of about 5 ym to about 150 ym, for example in a range of about 10 ym to about 100 ym, for example a maximum depth of about 100 ym.

In various exemplary embodiments, the depression 204 (partially or completely) may be filled with material of a light-outcoupling layer 208, which can also be referred to as scattering layer 208 in the exemplary embodiments illustrated in FIG. The light Auskopplungs ^¬ layer 208 is set in various exemplary embodiments, such that the light outcoupling from the lichtemittie ^¬ Governing device 200 in comparison to a light emitting device of the same construction, but without the light from ^¬ coupling layer 208 is increased. In various designs ^¬ approximately examples, the light extraction layer 208 is configured such that it changes the light path of a light from entering the coupling layer 208 ^¬ light beam and hence the light having a changed light path from the light-outcoupling layer ^¬ exits 208th In various designs can approximately examples ^¬ light extraction layer 208, a low-viscosity layer may be (and hence low viscosity Mate ^¬ rial have), for example a layer of a viscous ^¬ intensity of at most, for example, a layer having a viscosity of at most 1000 mPa * s, for example a Layer having a viscosity of at most 500 mPa * s, at ^¬ play, a layer having a viscosity of 250 mPa * s, for example a layer having a viscosity of at most 100 mPa * s, for example, a layer having a viscosity of at most 75 mPa * s, for example a layer having a viscosity of at most 50 mPa * s.

In various embodiments, the light-outcoupling layer 208 may optionally have a high refractive index, for example greater than or equal to 1.5, for example greater than or equal to 1.6, for example greater than or equal to 1.7, for example greater than or equal to 1.8, ^{beispielswei ¬} se of greater than or equal to 1.9, have. In various embodiments, the light-outcoupling layer 208 may have a refractive index in a range of about 1.5 to about 2.0, for example a refractive index in a range of about 1.6 to about 1.95, for example a refractive index in a range of about 1 , 8 to about 1.9.

In various embodiments, the light extraction layer 208 may be optionally configured as a light-scattering layer, the light-scattering layer may have Streupar ^¬ Tikel. In various embodiments, for example dielektri ^¬ specific scattering particles can be provided such as metal ^¬ oxide such as silicon oxide (Si02), zinc oxide (ZnO), Zirkoni ^¬ oxide (Zr02), indium tin oxide (ITO) or indium zinc as light-scattering particles Oxide (IZO), gallium oxide (Ga20a) alumina, or titania. Other particles may be suitable and used in Various ^¬ NEN embodiments, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, for example, metallic nanoparticles. Metal ^¬ le as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles. In various embodiments, the light-outcoupling layer 208 may include or be formed of one or more epoxies, plastic, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate, and / or polyurethane. In various embodiments, the

Lichtauskopplungsschicht 208 have a plurality of different materials ^¬ Licher viscosity. Optionally, the refractive index of the light-outcoupling layer can be adjusted by adding additives as desired.

If desired as part of the manufacturing process, then a planarization layer 212 may be provided optionally on or above at least the light Auskopplungs ^¬ layer 208 and possibly partly on a freilie ^¬ constricting upper surface 210 of the substrate 202nd In various embodiments, the planarization layer 212 may also be functionally formed by the material of the light-outcoupling layer 208 itself. The planarization layer 212 may include or be formed from one or more different materials, which may include or have, for example, a refractive index (similar or the same) to the refractive index of the material of the light- ^outcoupling layer 208. In various embodiments, the planarization layer 212 may comprise or be formed from, for example, one or more epoxides and / or one or more acrylates whose (respective) refractive index may be, for example, matched to the filler material, in other words the Refractive index of the material of the light-outcoupling layer 208. In various embodiments, the planarization layer

212 have a layer thickness in a range of about 0.5 ym to about 50 ym, for example, have a layer thickness in a range of about 0.5 ym to about 20 ym, for example, have a layer thickness in a range of about 0.5 ym to about 1 ym.

On or above the planarization layer 212 may optionally be arranged a barrier layer 214, for example has a layer or a layered structure that is adapted to form a barrier to chemical Verun ^¬ cleaning or atmospheric agents, in particular to water (moisture) and oxygen. With different electrical words, the barrier layer 214 is formed such that it can not or at most permeated at very low Antei ^¬ len of OLED depleting substances such as water, oxygen or solvent. The barrier layer 214 may be (one atomic layer) have to about 1000 nm, example ^¬ a layer thickness of about 10 nm to about 100 nm in accordance with an embodiment, for example, about 40 nm according to an embodiment according to an embodiment a layer thickness of about 0.1 nm. According to an embodiment in which the barrier layer 214 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another Ausges ^¬ taltung the individual partial layers of the barrier layer 214 may have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers. The barrier layer 214 or the individual partial layers of the barrier layer 214 may be formed as a translucent or transparent layer according to one embodiment. In other words, the barrier layer 214 (or the individual sublayers of the barrier layer 214) may be made of a translucent or transparent material (or combination of materials that is translucent or transparent). According to one embodiment, the barrier layer 214 or (in the case of a layer stack with a

Plurality of sub-layers) have one or more of the partial layers of the barrier layer 214 of a subsequent material ^¬ lien or consist of: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide Lanthaniu- Moxide, silicon oxide, silicon nitride, silicon oxynitride, Indi ^¬ umzinnoxid, indium, Aluminum-doped zinc oxide, as ^¬ mixtures and alloys thereof. On or over the barrier layer 214 (or the Planarisie approximately ^¬ layer 212 or the light extraction layer 208) may be disposed an electrically active region 216 of the light emitting device 200th The electrically active region 216 can be understood as the region of the light-emitting component 200 in which an electric current flows for operation of the light-emitting component 200. In various exemplary embodiments, the electrically active region 216 may have a first electrode 218, a second electrode 220 and an organic functional layer structure 222, as will be explained in more detail below.

Thus, in various exemplary embodiments, the first electrode 218 (for example in the form of a first electrode layer 218) may be applied on or above the barrier layer 214. The first electrode 218 (also referred to below as the lower electrode 218) may be formed of an electrically conductive material, such as a metal or a conductive transparent oxide (TCO) or a ^{Schichtsta ¬} pel of several layers thereof Metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent routing ^¬ compatible materials, for example metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, Indi ^¬ oxide, or indium tin oxide (ITO). In addition to binary Metallsau ^¬ erstoffVerbindungen such as ZnO, Sn02, or Ιη2θ3 ternary metal-oxygen compounds, such as AlZnO, Zn2Sn04, CdSn03, ZnSn03, Mgln204, Galn03, Ζη2ΐη2θ5 or In4Sn30] _2 or mixtures of different transparent conductive oxides, to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped. In various embodiments, the first electrode 218 may comprise a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.

In various embodiments, the first electrode 218 may be formed by a stack of layers of a com bination ^¬ a layer of a metal on a layer of TCOs, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 218 may include one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, such as Ag; Networks of carbon nanotubes ^¬ material; Graphene particles and layers; Networks of semiconducting nanowires.

Further, the first electrode 218 may comprise electrically conductive polymers or transition metal oxides or electroconducting ^¬ hige transparent oxides. In the event that the light emitting device 200 emits light to pass through the substrate 202, the first electrode 218 may be formed and the substrate translucent or transpa rent ^¬ 202nd In this case, the first electrode, in the case that the first electrode 218 is formed of a metal 218, for example, a layer thickness aufwei ^¬ sen of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal un ^¬ dangerous 18 nm. Further, the first electrode 218, for example, have a layer thickness of greater than or equal to about 10 nm, for example a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 218 may a layered have a thickness in the range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Further, in the case of a translucent or transparent first electrode 218, and in the case where the first electrode 218 is formed of a conductive transparent oxide (TCO), the first electrode 218 may have, for example, a layer thickness ranging from about 50 nm to about 500 nm, for example, a layer thickness in egg ^¬ nem range of about 75 nm to about 250 nm, for example, a layer thickness in a range from about 100 nm to about 150 nm.

Further, in the case of a translucent or transparent first electrode 218, and for the case that the first electrode 218 made of, for example, a network of metallic see nanowires, for example of Ag, which may be combined with leitfä ^¬ ELIGIBLE polymers, a network of carbon Nanotubes, which may be combined with conductive polymers, or formed by graphene layers and composites, the first electrode 218, for example, has a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

In the event that the light-emitting component 200 emits light exclusively upwards, the first electrode 218 can also be configured opaque or reflective. In this case, the first electrode 218 (for example, in the case of a metallic electrode), for example, a

Layer thickness having 40 nm of greater than or equal to about, for example, a layer thickness of greater than or equal unge ^¬ ferry 50 nm. The first electrode 218 may be formed as an anode, so as löcherinji ^¬ ornamental electrode or as a cathode, ie, as an electron injecting electrode.

The first electrode 218 can have a first electrical connection to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to or be to the substrate 202 and then indirectly applied to the first electrode 218. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 216 of the light-emitting component 200 may comprise an organic electroluminescent layer structure 222, which is or will be applied on or above the first electrode 218.

The organic electroluminescent layer structure 222 may include one or several emitter layers, ten contained, for example, fluo ^¬ reszierenden and / or phosphorescent emitters, and one or more hole transport layers (also referred to as a hole transport layer (s)). In various ^exemplary embodiments, one or more electron ^conduction layers (also referred to as electron transport layer (s)) can alternatively or additionally be provided.

Examples of emitter materials in the light emitting device 200 according to various embodiments for the emitter layer (s) can be used, eventually ^¬ SEN organic or organometallic compounds, such as deriva- tives (from polyfluorene, polythiophene and polyphenylene for example, 2- or 2, 5- substituted poly-p-phenylene vinylene), and metal complex ^¬, for example, iridium complexes such as blue phospho ^¬ reszierendes FIrpic (bis (3, 5-difluoro-2- (2-pyridyl) phenyl- (2- carboxypyridyl) iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red phosphores ^¬ ornamental forming Ru (dtb-bpy) 3 * 2 (PFG) (tris [4, 4 '-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4, 4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA

(9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymers Emitter. Such non-polymer emitters can be deposited, for example, by means of thermal evaporation. Further, polymer emitter can be used, which, in particular by means of a wet chemical Ver ^¬ proceedings, such as spin coating, can be deposited. The emitter materials of the emitter layer (s) of the animal lichtemit ^¬ construction element 200 can for example be selected so that the light emitting device emits white light 200. The emitter layer (s) can / can have multiple different colors (for example blue and yellow or blue, green and red) having emitting emitter materials / the emitter layer (s) may also be composed of several sublayers alterna ^¬ tive, such as a blue fluorescent emitter layer or blue phosphorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, can also be provided to arrange a converter material in the beam path of the primary emission produced by these layers, the primary radiation at least partially absorbs and emits a Se ^¬ kundärstrahlung different wavelength, so that from a (not white) primary radiation by the combination of primary radiation and secondary radiation gives a white color impression.

The emitter materials may be suitably embedded in a matrix material. It should be noted that other suitable emitter mate ^¬ rials are also provided in other embodiments. The organic electroluminescent layer structure 222 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules"), or a combination of these materials For example, the organic electroluminescent layer structure 222 may include one or more electroluminescent layers as a hole is executed ^¬ transport layer or so that beispiels-, in the case of an OLED effective hole injection in an electroluminescent layer or an electroluminescence mine ornamental range is made possible. Alternatively, the organic electroluminescent layer structure having one or more functional layers, in various embodiments, the is carried out as an electron transport layer ^¬ or are, so that, for example, in the case ei ^¬ ner OLED effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. For example, tertiary amines, carbazoderivatives, conductive polyaniline or polythylenedioxythiophene can be used as the material for the hole transport layer. In various embodiments, the one or more electroluminescent ones may or may not

Layers be designed as an electroluminescent layer.

In various embodiments, the hole transport layer may be on or above the first electrode 218 be applied ^¬, for example, is deposited to be, and the emitter layer may ^¬ introduced listed on or above the hole transport layer, for example, be deposited.

In various embodiments, the organic electroluminescent layer structure 222 (that is, for example, se the sum of the thicknesses of the hole transport layer (s) and emitter layer (s) and electron transport layer (s)) have a layer thickness of a maximum of about 1.5 ym, wherein ^¬ play, a layer thickness of at most approximately 1.2 .mu.m, for example a layer thickness of at most about 1 ym, for example a layer thickness of at most about 800 nm, for example a layer thickness of at most about 500 nm, for example a layer thickness of at most about 400 nm, for example a layer thickness of at most about 300 nm. In various embodiments, the organic electroluminescent layer structure 222 may, for example ei ^¬ NEN stack of a plurality of directly superimposed organic light-emitting diodes (OLEDs) have, each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, at For example, a layer thickness of at most about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of about 300 nm. In various embodiments, the organic electroluminescent layer structure 222 ^¬ example, a stack of two, three or four directly superimposed OLEDs, in which case, for example, the organic electroluminescent layer ^¬ structure 222 may have a layer thickness of at most about 3 ym.

Optionally, the light-emitting component 200 can generally have further organic functional ^layers , for example arranged on or above the one or more emitter layers, which serve to further improve the functionality and thus the efficiency of the light-emitting component 200.

On or above the organic electroluminescent layer structure 222 or optionally on or above the one or more further organic functional layers, the second electrode 220 (for example in the form of a second electrode layer 220) may be applied.

In various exemplary embodiments, the second electrode 220 may comprise or be formed from the same materials as the first electrode 218, with metals being particularly suitable in various ^exemplary embodiments.

In various embodiments, the second electrode 220 (for example, in the case of a metallic second electrode 220), for example a layer thickness ^¬ point of less than or equal to about 50 nm, for example, a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to 20 nm, for example a layer thickness of less than or equal to approximately 15 nm, for example a layer thickness of less than or equal to approximately 10 nm.

The second electrode 220 may generally be formed similar to, or different from, the first electrode 218. The second electrode 220 may in various embodiments be formed of one or more of the materials and with the respective layer thickness (depending on whether the second electrode 220 is to be reflective, translucent or transparent), as described above in connection with FIG first electrode 218. In the illustrated embodiment in Figure 2, the second electrode 220 may be formed from reflective ^¬. Thus, the light-emitting device 200 shown in Figure 2 can be configured as a bottom emitter. The second electrode 220 can be formed or as a cathode, ie as an electron-injecting electrode as an anode, so as löcherinji ^¬ ornamental electrode. The second electrode 220 can have a second electrical connection to which a second electrical potential (which is different from the first electrical potential) provided by the energy source can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

On or above the second electrode 220 and thus on or above the electrically active region 216, an encapsulation 224, for example in the form of a barrier thin-film / thin-layer encapsulation 224, can optionally also be formed or be.

In the context of this application, a "barrier thin film" or a "barrier thin film" 224 can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and Oxygen, form. In other words, the barrier thin layer 224 is designed in such a way that it can not be penetrated by OLED-damaging substances such as ^water , oxygen or solvents, or at most only to very small proportions.

According to one embodiment, the barrier film 224 may (in other words, as a single ^¬ layer) as a single layer may be formed. According to an alternative Ausges ^¬ taltung the barrier film 224 may have a plurality of successive sub-layers formed. With other In one embodiment, the barrier thin layer 224 may be formed as a layer stack (stack). The barrier thin layer 224 or one or more partial layers of the barrier thin layer 224 can be formed, for example, by means of a suitable deposition method, for example by means of an atomic layer deposition (ALD) method according to one embodiment, eg a plasma-enhanced atomic layer deposition method (PEALD ) or a plasma-less atomic layer deposition process (PLALD) or by means of a chemical vapor deposition (CVD) process according to another embodiment, eg a plasma enhanced gas phase deposition process (Plasma Enhanced Chemical Vapor Deposition (PECVD)) or a plasma-less chemical vapor deposition (PLCVD) method, or alternatively by other suitable deposition methods.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to an embodiment can at a Barrierendünn- layer 224 which has a plurality of layers, all part ^¬ layers are formed by means of a Atomlagenabscheideverfahrens. A layer sequence, which has only ALD layers may also be referred to as "nano-laminate" According to an alternative embodiment, one or more sub-layers of the barrier film 224 may be in a barrier film 224 having a plurality of sub-layers, using a different deposition method as an atomic layer ^¬ nabscheideverfahren. be deposited, for example by means of a gas phase separation method.

The barrier thin film 224 may have a layer thickness of about 0.1 nm (one atomic layer) according to an embodiment. 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to a ^{Ausgestal ¬} tion.

According to an embodiment in which the barrier thin layer 224 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another Ausges ^¬ taltung the individual part layers of the layer 224 Barrierendünn- can have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers. The barrier thin-film 224 or the individual partial layers of the barrier thin-film 224 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 224 (or the individual sublayers of the barrier film 224) may be made of a translucent or transparent material (or a combination of materials that is translucent or transparent).

According to one embodiment, the barrier film 224, or may (in the case of a stack of layers with a plurality of sub-layers) have one or more of the partial layers of the barrier film 224 of one of the following materials or consist of: aluminum oxide, zinc oxide, zir ^¬ koniumoxid, titanium oxide, hafnium oxide, tantalum oxide Lanthaniumo - xid, silicon oxide, silicon nitride, silicon oxynitride, indium ^¬ tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof.

In various embodiments, an adhesive and / or a protective varnish 226 may be provided on or above the encapsulation 224 (and optionally also laterally next to the encapsulation 224, such that the adhesive and / or the protective varnish 226 are arranged laterally of the stack of the light emission on or above the light emission. coupled layer 208 may be disposed on the upper surface 210 of the substrate 202), by means of which, for example, an optional cover 228 (eg, a glass cover 228) is mounted on the encapsulation 224, for example glued. In various examples, the execution ^¬ optically translucent layer of adhesive ^¬ material and / or protective coating 226 can have a layer thickness of greater than 1 .mu.m, for example a layer thickness of MEH ^¬ reren ym. In various embodiments, the adhesive 226 may include a lamination adhesive or a lamination adhesive.

In various embodiments, between the second electrode 220 and the layer of adhesive and / or resist 226 still an electrically insulating layer

(not shown) can be applied or, Example ^¬ as SiN, for example with a layer thickness in a Be ^¬ ranging from about 300 nm to about 1.5 ym, for example with a layer thickness in a range from about 500 nm to about 1 ym, to protect electrically unstable materials, for example, during a wet-chemical Prozes ^¬ ses.

In Figure 2 the cavity is clearly shown (for example, glass or a polymer), for example in the case of USAGE ^¬ dung from a translucent or transparent substrate 202 204 in various exemplary embodiments. In this case, as described above, the diffusion layer 208 may be introduced into the cavity 204. In various embodiments, this may have a high refractive index as possible possess (for example, a refractive index in a range of about 1.8 to about 1.9) in order to couple the light generated by the light emitting device 200 from ^¬. If the refractive index is smaller, then in some embodiments only a part of the internal modes may be achieved. If the scattering layer 208 itself is sufficiently flat, the planarization (in other words, the planarization layer 212) can be dispensed with become. The barrier layer 214 may be omitted in various embodiments, for example, if the encapsulation 224 is flush with the substrate 202 and the sub ^¬ strat 202 is itself hermetically.

3 shows a cross-sectional view of a light emitting device 300 according to various embodiments.

The organic light emitting diode 300 according to Figure 3 is in many As- pekten equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 300 according to Figure 3 to the organic light emitting diode 200 according to Figure 2 in more detail ^¬ be explained; with respect to the remaining elements of the organic light emitting diode 300 according to Figure 3, reference is made to the above statements on the organic light emitting diode 200 according ^¬ Fig.2.

In various embodiments, the light emitting device 300 may be configured as a bottom emitter.

In contrast to the organic light-emitting diode 200 according to FIG. 2, in the organic light-emitting diode 300 according to FIG. 3 in the depression 204, for example in the bottom of the depression 204, a light-diffractive structure 302 and / or a light-breaking structure 302 are provided. The diffractive structure 302 and / or the refractive structure 302 may include a lens structure 302. The lens structure 302 may have lateral dimensions, for example, in a range of about 1 ym to about 50 ym, for example, in a range of about 10 ym to about 40 ym, for example, in a range of about 20 ym to about 30 ym.

4 shows a cross-sectional view of a light emitting device 400 according to various embodiments.

The organic light emitting diode 400 according to Figure 4 is in many pekten As ^¬ equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic see light emitting diode 400 of Figure 4 to the organic light emitting diode 200 according ^¬ Fig.2 are explained in detail; With regard to the remaining elements of the organic light emitting diode 400 according to FIG. 4, reference is made to the above explanations regarding the organic light emitting diode 200 according to FIG.

In various embodiments, the light emitting device 400 may be configured as a bottom emitter. In contrast to the organic light emitting diode 200 according to Figure 2, a diffractive structure 402 and / or a lichtbre ^¬ sponding structure 402 is in the organic light emitting diode 400 according to Figure 4 in the recess 204, for example in the bottom of the recess 204, is provided. The diffractive structure 402 and / or the light-refracting structure 402 may have a non ^¬ periodic structuring 402nd

Illustratively, FIG. 3 and FIG. 4 show the exemplary case of an OLED emitting on the substrate side, in which the filling layer 208 used (in other words, the light-outcoupling layer 208) has a low viscosity. Thus, it is not intended for a to disperse scattering particles ho ^¬ mogen in the filling layer 208 and on the other hand, the achievable layer thicknesses are at, for example up spin (spin coating) the filling layer 208 limited to possibly thin layers to a suffi ^¬-reaching desired Improvement of the light extraction to achieve. By structuring the underside of the cavity 204, for example, light scattering is achieved. The struc- ture within the cavity 204 can have (as shown in Figure 4), for example, Lin ^¬ (as shown in Figure 3) senform or even non-periodic structures. The overall construction makes it possible to perform a high refractive index layer (as imple ^¬ mentation of the light extraction layer 208) from the or the emitter layer (s) of the light emitting device (in ^¬ play, the OLED) to the scattering structure 302, 402, and thus the light extraction to improve. As will be explained in more detail below, are in the

FIG. 5, FIG. 6 and FIG. 7 show comparable implementations for the case of a non-transparent substrate 202 (differently from ^¬ pressed for the case of a top emitter), for example made of metal. In these cases, the Lichtauskopp ^¬ ment can be improved, for example, by, for example, the cavity is mirrored from the inner side. In turn, for example, as high as possible Ma ^¬ material is applied. It is possible to provide it with light-scattering properties, the light can be scattered in this implementation, a light extraction layer and are thrown with ^¬ means of the mirror back upwards (ie in the direction of the electrically active region). If scattering particles can not be readily introduced, as may be the case when using one or more low-viscosity material in the light-outcoupling layer 208, the underside of the cavity 204 may be structured and ver ^¬ reflected. As a result, the path of the light is changed at this point and it is again an improved light output can be achieved.

5 shows a cross-sectional view of a light emitting device 500 according to various embodiments. The organic light emitting diode 500 according to Figure 5 is in many pekten As ^¬ equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 500 according to Figure 5 to the organic light emitting diode 200 according to Figure 2 in more detail ^¬ be explained; with respect to the remaining elements of the organic light emitting diode 500 according to FIG

FIG. 5 is referred to above explanations of the organic light ^emitting diode 200 according to FIG.

In various embodiments, the light emitting device 500 may be configured as a top emitter.

In contrast to the organic light-emitting diode 200 according to FIG. 2, in the case of the organic light-emitting diode 500 according to FIG. strat 202, for example, non-translucent or transparent ^¬.

Further, below the light-outcoupling layer 208, in other words, between the light-outcoupling layer 208 and the bottom of the recess 204, a mirror 502 is disposed in various embodiments. The mirror may include one or more metal films (eg, Ag, Mg, Sm, Ca, as well as multiple layers and alloys of these materials). In various embodiments, the mirror 502 may have a layer thickness in a range of about 20 nm to about 200 nm, for example a

Layer thickness in a range of about 30 nm to about 100 nm, for example, a layer thickness in a range of about 40 nm to about 50 nm. Further, in various embodiments, the mirror 502 may comprise one or more (thin) dielectric mirrors, the one layer ^¬ can form stacks. The mirror 502 with the one or more (thin) dielectric mirrors may be formed or be such that a reflection takes place at the interfaces, for example a coherent multiple reflection. In this way, the transmission or reflection of the mirror 502 can be set very easily. The dielectric mirror (s) may comprise one or more of the following materials: for example, fluorides (MgF 2,

CeF3, NaF, LiF, CaF2, a3, AlFg, AIF3, ThF4), oxides (Al2O3, T1O2, S1O2, r02, HfO2, MgO, Y2O3, La2O3, CeO2, ZnO), sulfides (ZnS, CdS), and compounds such as eg ZnSe, ZnSe. In ver ^¬ various embodiments, a layer sequence comprising an arbitrary number may be (begin ^¬ Nend with a single) provided films for dielectric thin-film mirror, which are of alternating refractive indices (Hi-Lo-Hi-Lo) positioned ^¬ introduced. As a result, very high reflectivities in the visible spectral range can be achieved.

6 shows a cross-sectional view of a light emitting device 600 according to various embodiments. The organic light emitting diode 600 according to Figure 6 is in many ^¬ As pekten equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 600 according to see Fig.6 to the organic light emitting diode 200 according ^¬ Fig. 2 will be explained in more detail; With regard to the remaining elements of the organic light-emitting diode 600 according to FIG. 6, reference is made to the above explanations of the organic light ^emitting diode 200 according to FIG.

In various embodiments, the light emitting device 600 may be configured as a top emitter.

In contrast to the organic light emitting diode 200 according to Figure 2, a diffractive structure 302 and / or a lichtbre ^¬ sponding structure 302 is in the organic light emitting diode 300 according to Figure 3 in the recess 204, for example in the bottom of the recess 204, is provided. The light diffractive structure 302 and / or the refractive structure 302 may include a lens structure 302. The lens structure 302 may have lateral dimensions, for example, in a range of about 1 ym to about 50 ym, for example, in a range of about 10 ym to about 40 ym, for example, in a range of about 20 ym to about 30 ym. On the exposed surface of the diffractive structure 302 and / or the refractive structure 302, for example, the lens structure 302, a mirror coating 602 is provided, for example of metal, for example of Ag, Mg, Sm, Ca, as well as multiple layers and alloys of these materials. The coating 602 may have a layer thickness in a range from about 20 nm to about 200 nm, for example, a layer thickness in a range of dangerous un ^¬ 30 nm to about 100 nm, for example, a

Layer thickness in a range from about 40 nm to about 50 nm. Further, the mirror coating 602 may have one or more (thin) dielectric mirror that form a layer stack, in various embodiments Kgs ^¬ NEN. The mirror coating 602 with the one or more (thin) dielectric mirrors can be formed or be such that a reflection takes place at the interfaces, for example, a coherent multiple reflection. In this way, the transmission or reflection of the mirror coating 602 can be set very easily. The dielectric mirror (s) may comprise one or more of the following materials: for example, fluorides (MgF 2, CeF 3, NaF, LiF, CaF 2, a 3, AlFg, AIF 3, ThF 4), oxides (Al 2 O 3, TiO 2, SiO 2, rO 2, HfO 2, MgO, Y2O3, La2Ü3, Ce02, ZnO), sulfides (ZnS, CdS), and compounds such as ZnSe, ZnSe. In ver ^¬ various embodiments, a layer sequence comprising an arbitrary number may be (begin ^¬ Nend with a single) thin films provided for dielectric thin film mirror, which with alternating refractive indices (Hi-Lo-Hi-Lo) are introduced listed. As a result, very high reflectivities in the visible spectral range can be achieved. Illustratively, the light emitting device 600, a "mirrored" ^¬ lens structure 302. 7 shows a cross-sectional view of a light emitting device 700 according to various embodiments.

The organic light emitting diode 700 according to Figure 7 is in many pekten As ^¬ equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 700 according to Figure 7 according to the organic light emitting diode 200 ^¬ 2 shows in more detail be explained; With regard to the other elements of the organic light emitting diode 700 according to FIG. 7, reference is made to the above explanations regarding the organic light emitting diode 200 according to FIG.

In various embodiments, the light emitting device 700 may be configured as a top emitter. In contrast to the organic light-emitting diode 200 according to FIG. 2, in the organic light-emitting diode 700 according to FIG. 7, in the depression 204, for example in the bottom of the depression 204, a light diffractive structure 402 and / or a lichtbre ^¬ sponding structure 402 is provided. The diffractive structure 402 and / or the light-refracting structure 402 may have a non ^¬ periodic structuring 402nd

On the exposed surface of the light-diffractive structure 402 and / or the refractive structure 402, for example, the non-periodic structuring 402, a mirror coating 702 is provided, for example of metal, for example of Ag, Mg, Sm, Ca, as well as multiple ^¬ layers and Alloys of these materials. The coating 702 may have a layer thickness in a range from about 20 nm to about 200 nm, for example a layer thickness in a range from about 30 nm to about 100 nm, for example a layer thickness in a range from about 40 nm to about 50 nm . Furthermore, in various embodiments, the mirror coating 702 may have one or more (thin) dielectric mirror, can form the egg ^¬ NEN layer stack. The mirror coating 702 with the one or more (thin) dielectric mirrors can be formed in such a way or that a reflection takes place at the interfaces, such as a kohären ^¬ te multiple reflection. In this way, the transmission or reflection of the mirror coating 702 can be adjusted very easily. The dielectric mirror (s) may comprise one or more of the following materials: for example fluorides (MgF 2, CeF 3, NaF, LiF, CaF 2, a 3, AlFg, AIF 3, ThF 4), oxides (Al 2 O 3, TiO 2, SiO 2, ZrO 2, HfC> 2, MgO, Y 2 O 3, La 2 O 3, CeO 2, ZnO), sulfides (ZnS, CdS), and compounds such as ZnSe, ZnSe. In various embodiments, for dielectric thin-film mirrors, a layer sequence of any number (starting with a single) of thin layers can be provided, which are applied with alternating refractive indices (Hi-Lo-Hi-Lo). As a result, very high reflectivities in the visible spectral range can be achieved. Illustratively, the light-emitting component 700 has a "mirrored" nonperiodic structuring 402. 8 shows a cross-sectional view of a light emitting device 800 according to various embodiments. The organic light emitting diode 800 according to Figure 8 is in many pekten As ^¬ equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 800 according to Figure 8 to the organic light emitting diode 200 according to Figure 2 in more detail ^¬ be explained; with respect to the remaining elements of the organic light emitting diode 800 according to

FIG. 8 is referred to above explanations of the organic light- ^emitting diode 200 according to FIG.

In various embodiments, the light emitting device 800 may be configured as a top emitter.

In contrast to the organic light-emitting diode 200 according to FIG. 2, in the case of the organic light-emitting diode 800 according to FIG. 8, no depression 204 is provided. Instead, a second well 802 configured in an analogous manner is in the cover

228 formed (ie, for example, with similar or moving ^¬ cher depth, starting from the surface of the cover 228, from which the second recess 802 extending into the cover 228 in), the development layer with a second Lichtauskopp- is completely filled 804 partially or and which may have the same materials as the light-outcoupling layer 208. Illustratively, in various embodiments, the cover 228 serves as a support for the second recess 802.

In this way, the total reflection between the electrically active region 216 and the cover 228 can be reduced. In the results shown in Figure 8 embodiments, the second electrode 220 may be inserted rich ^¬ tet transparent or translucent. 9 shows a cross-sectional view of a light emitting device 900 according to various embodiments.

The organic light emitting diode 900 according to Figure 9 is in many As- pekten equal to the organic light emitting diode 200 according to Fig.2, which is why in the following only the differences of the organic light emitting diode 900 according to Figure 9 to the organic light emitting diode 200 according to Figure 2 in more detail ^¬ be explained; With regard to the other elements of the organic light-emitting diode 900 according to FIG. 9, reference is made to the above explanations of the organic light- ^emitting diode 200 according to FIG.

In various embodiments, the light emitting device 900 may be configured as a transparent or translucent light emitting device 900, in other words, configured as a top and bottom emitter. This means, for example, that the first electrode 218 and the second electrode 220 may be formed optically transparent.

Clearly, the light emitting device 900 may be considered in accordance with Figure 9 as a combination of the light emitting device 200 according to Figure 2 and the light emitting device 800 ge ^¬ Mäss Fig. 8. This means that the light-emitting device 900 according to FIG. 9 has both the recess 204 with the light-outcoupling layer 208 in the substrate 202 and the second depression 802 with the second light-outcoupling layer 804 in the cover 228. It should be noted that the embodiments of the light emitting devices 800, 900 according to Figure 8 and Figure 9 can also be combined in accordance with the additional elements of the light emitting devices 300, 400 ge ^¬ Mäss Figure 3 and Figure 4. Further, the embodiments of the light emitting device 800 can also be combined ent ^¬ speaking with the additional elements of the light emitting devices 500, 600 according to Figure 8, 700 of Figure 5, or Fig .6. Fig. 7. In various embodiments, it may be provided that at least part of the electrically active region 216 and possibly even of the encapsulation 224 may also be accommodated in the depression 204, 804, such that the depression 204, 804 clearly surrounds the recorded regions laterally.

In various embodiments, the total reflection in the light emitting device may be reduced between the electrically active region 216 and the support of the recess (eg, the substrate 202 and / or the cover 228). In the results shown in Figure 9 embodiments, the second electrode 220 may be inserted rich ^¬ tet transparent or translucent.

10 shows a flow chart 1000, in which a method for producing a light-emitting component according to various exemplary embodiments is shown.

In 1002, a recess may be formed in a carrier, followed by, at 1004, forming a light-outcoupling layer in the recess. In 1006 electrically active region above the light extraction layer may be formed ^¬ the, wherein the forming of the electrically active region comprising: forming a first electrode; forming a second electrode; and forming an organic functional layer structure between the first electrode and the second electrode.

The various layers, for example the light-outcoupling layers 208, 804, the electrodes 208, 218 and the other layers of the electrically active region 216, such as the organic functional layer structure 222, the hole transport layer (s) or the electron transport layer (s), can by means of various processes. be introduced, for example, be deposited, for example ^¬ by means of a CVD method (chemical vapor deposition, chemical vapor deposition) or by means of a PVD process (physical deposition from the gas phase, physical vapor deposition, such as sputtering, ion-assisted deposition or thermal Evaporation), alternatively by means of a plating process; a Tauchab ^¬ sheath method; a spin co-coating process; printing; doctoring; or spraying.

As CVD method can be used in various embodiments, a plasma-assisted chemical deposition method from the gas phase (plasma enhanced chemical vapor deposition, PE-CVD). In this case, in a volume above and / or around the element to which the layer to be applied is to be ^¬ introduced, around a plasma is generated, wherein the Volu ^¬ men at least two gaseous starting compounds are supplied ionized in the plasma and react with each other be stimulated. By the generation of the plasma, it may be possible that the temperature to which the Oberflä ^¬ surface of the element has to be heated to allow generation in ^¬ play, the dielectric layer can be decreased as compared to a plasma-free CVD method. This may be advantageous, for example, if the element, for example the light-emitting electronic component to be formed, would be damaged at a temperature above a maximum temperature. The maximum Tempe ^¬ temperature, according to various exemplary embodiments about 120 ° C for example, be at a too-forming lichtemit ^¬ animal the electronic component, so that the temperature ^¬ structure in which, for example, the dielectric layer is ^¬ introduced is less than or equal to 120 ° C and, for example, less than or equal to 80 ° C can be. As described in detail above, one or more depressions can be introduced into different OLED substrates by means of different processes (for example etching, stamping, hot embossing). This vitäten can clearly serve as a pot with optional structuring ^¬ render and support capacity for the following functional layers of the OLED. 11 shows a cross-sectional view of a light emitting device 1100 according to various embodiments.

The organic light-emitting diode 1100 according to FIG. 11 is in many aspects similar to the organic light-emitting diode 200 according to FIG. 2, for which reason in the following only the differences of the organic light-emitting diode 1100 according to FIG

LED 200 are explained in more detail according to Figure 2; ^¬ Lich respect of the remaining elements of the organic light emitting device 1100 according to Figure 11, reference is made to the above statements to the organic light emitting diode 200 according to Fig.2.

In the exemplary embodiments illustrated in FIG. 11, the light-outcoupling layer 208 may be arranged above the electrically active region 216.

For example, the entire layer stack including the optional planarization layer 212, the optional barrier layer 214, the electrically active region 216 (including the first contact 218, the organic functional layer structure 222, and the second electrode 220), the encapsulation 224, and the Lichtauskopplungsschicht 208 may be disposed in the recess 204. The adhesive and / or resist 226 may be provided on or over the light-outcoupling layer 208 and the top surface 210 of the substrate 202. Further, the optional cover 228 may (e.g., a glass cover 228) may be be disposed on or over the adhesive and / or protective lacquer 226 and ^¬ play buildin ^¬ account during by the adhesive to the substrate 202nd

At the interface 1102 of the light-outcoupling layer 208, which faces the adhesive and / or resist 226 or the cover 228, may optionally be a light-diffractive Structure and / or a refractive structure may be provided.

For example, various embodiments provide the following advantages, for example, through the use of such a carrier as described above (eg, substrate or cover):

(i) The pot formed by the cavity provides vividly an easy way (for example, niedrigvis ^{¬-viscosity)} materials in sufficient layer thickness applied and thus planarizing the material selection for functional layers (for example, lichtauskopplungsverbes--improving layers, for example materials with HO- hem refractive index and / or Schich ^¬ th) and their application method to expand. For example, it may be possible by means of the cavity (s) to achieve higher layer thicknesses during spin-coating of low-viscosity materials.

(ii) Since the cavity of a few ym to about 100 ym, wherein ^¬ play can go up to 200 ym depth within the carrier (substrate or cover), it is possible to introduce larger Auskoppelhilfen in the OLED without increasing the overall thickness of the component, ie the light ^¬ emitting device to increase.

(iii) When introducing the cavity into the carrier (substrate or cover) can optionally be additionally

Create structures at the bottom. Such

Structures can be used, for example, as lens forms or non-periodic structures, for example in the form of nonperiodic rough shapes, for light scattering.

(iv) the introduction / sinking of functional layers into the substrate (substrate or cover) of the light-emitting component (for example an OLED) can be used to improve the appearance of the light-emitting device. Scattering patterns within instead of on the outside of the carrier (substrate or cover) make it possible, for example, to maintain the smooth surface of a carrier glass.

(v) The support structure and the sinking of the OLED therein can be ge ^¬ utilized for simplification of the OLED layer structure. For example, in the case of hermetically sealed substrates (for example glass, metal), an encapsulation layer (for example the barrier layer in the above exemplary embodiments) or a subsequent structuring step can be dispensed with by sinking and thus structuring substrate-side layers. An (e) sol ^¬ che (r) would otherwise be necessary in the case of flat applied non-hermetic layers (for example, for planarization and / or high refractive index), since they produce a water-transporting gap between the substrate and air-side encapsulation.

(vi) For example, in the industrial application

the support structure does not represent any significant additional costs.

For various materials for the support (substrate or cover), there are simple production processes which can produce the proposed structures on an industrial scale cost-effectively:

(i) In glass, the desired structure can be punched directly before its hardening. (ii) A plastic substrate may be, for example, by means of Hot

Embossing be shaped accordingly.

(i ü) A metal substrate can be embossed, for example.

Claims

A light-emitting device (200), comprising:

a carrier (202) having at least one recess

(204);

a light-outcoupling layer (208) in the recess (204); and

an electrically active region (216) disposed above or below the light-outcoupling layer (208), the electrically active region (216) comprising:

A first electrode (218);

A second electrode (220);

An organic functional layer structure (222) between the first electrode (218) and the second electrode (220).

The light-emitting device (200) of claim 1, wherein the light-outcoupling layer (208) comprises low-viscosity material.

A light emitting device (200) according to claim 1 or 2,

wherein said light outcoupling layer (208) is a low viscous ^¬ layer.

A light emitting device (200) according to any one of, An ^¬ claims 1 to 3

wherein the light-outcoupling layer (208) has a viscosity of at most 1000 mPa * s.

A light emitting device (200) according to any one of, An ^¬ claims 1 to 4

wherein the light-outcoupling layer (208) is arranged to increase light extraction from the light-emitting device (200).

6. Light-emitting component (200) according to one of the claims ^¬ 1 to 5, wherein the light- ^outcoupling layer (208) is arranged as a light-scattering layer (208).

The light-emitting device (200) according to claim 6, wherein the light-diffusing layer (208) comprises scattering particles.

8. Light-emitting component (200) according to any one of claims ^¬ 1 to 5, further comprising:

a diffractive structure and / or refractive

Structure arranged in the recess (204)

are / is.

9. A light emitting device (200) according to claim 8, wherein the light diffractive structure and / or a lichtbre ^¬ sponding structure in the bottom of the recess (204) are formed / is.

10. Light-emitting component (200) according to claim 8

or 9,

wherein the light diffractive structure and / or a lichtbre ^¬ sponding structure has a lens structure and / or a non-periodic structure. 11. Light-emitting component (200) according to one of the claims ^¬ 1 to 10,

wherein the recess (204) has a depth in a range of about 1 ym to about 200 ym. 12. Light-emitting component (200) according to one of the claims ^¬ 1 to 11,

wherein at least a portion of the electrically active region (216) is disposed in the recess (204). 13. Light-emitting component (200) according to any one of claims ^¬ 1 to 12, further comprising:

a cover (228) disposed over the electrically active region (216).

14. Light-emitting component (200) according to any one of claims ^¬ 1 to 13, further comprising:

an encapsulation (224) which is disposed on the side of the electrically active region (216) facing away from the carrier (202), above the electrically active region (216).

15. Light-emitting component (200) according to one of the claims ^¬ 1 to 14,

set up as an organic light-emitting diode.

16. A method (1000) for producing a light-emitting device (200), the method comprising:

Forming (1002) a depression (204) in a carrier (202);

Forming (1004) a light-outcoupling layer (208) in the recess (204); and

Forming (1006) an electrically active region (216) above or below the light extraction layer (208), where ^¬ having at the forming of the electrically active region (216):

Forming a first electrode (218);

Forming a second electrode (220);

Forming an organic functional layer structure between the first electrode and the second electrode (222).