WO2013047553A1

WO2013047553A1 - Method for producing capacitive input device, capacitive input device, and image display device provided with same

Info

Publication number: WO2013047553A1
Application number: PCT/JP2012/074638
Authority: WO
Inventors: 児玉　知啓; 公竹内
Original assignee: 富士フイルム株式会社
Priority date: 2011-09-30
Filing date: 2012-09-26
Publication date: 2013-04-04
Also published as: JP2013077098A; KR20140086969A; JP5763492B2; TW201314544A; TWI578211B; CN103842948A; CN103842948B

Abstract

Provided is a method for producing a capacitive input device which comprises a front plate and, provided on a non-contact side of the front plate, (1) a mask layer, (2) a plurality of first transparent electrode patterns, (3) a plurality of second transparent electrode patterns, (4) an insulation layer which electrically insulates the first transparent electrode patterns and the second transparent electrode patterns, and (5) a conductive element which is electrically connected to the first transparent electrode patterns and/or the second transparent electrode patterns and which is different from the first transparent electrode patterns and the second transparent electrode patterns, wherein a photosensitive film comprising a provisional support, a thermoplastic resin layer, and a photo-curable resin layer in that order is used to form at least one of (1) to (5). A high quality capacitive input device can be produced by these simple steps.

Description

Capacitance type input device manufacturing method, capacitance type input device, and image display apparatus including the same

The present invention relates to a method for manufacturing a capacitance-type input device capable of detecting a contact position of a finger as a change in capacitance, a capacitance-type input device obtained by the method, and the capacitance-type device The present invention relates to an image display device including an input device as a component.

In recent years, electronic devices such as mobile phones, car navigation systems, personal computers, ticket vending machines, and bank terminals have been equipped with a tablet-type input device on the surface of a liquid crystal device, etc., and an instruction image displayed in the image display area of the liquid crystal device In some cases, information corresponding to the instruction image can be input by touching a part where the instruction image is displayed with a finger or a touch pen.

Such input devices (touch panels) include a resistance film type and a capacitance type. However, the resistance film type input device has a drawback that it has a narrow operating temperature range and is susceptible to changes over time because it has a two-layer structure of film and glass that is shorted by pressing the film.

On the other hand, the capacitance-type input device has an advantage that a light-transmitting conductive film is simply formed on a single substrate. In such a capacitance-type input device, for example, electrode patterns are extended in directions intersecting each other, and when a finger or the like comes into contact, the capacitance between the electrodes is detected to detect the input position. (For example, refer to Patent Document 1 below).

In addition, as an electrostatic capacitance type input device, an alternating current of the same phase and the same potential is applied to both ends of the translucent conductive film to detect a weak current flowing when a capacitor is formed in contact with or close to a finger. Some types detect the input position. As such a capacitive input device, a plurality of first transparent electrode patterns and a plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connecting portions. And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed to extend in a direction crossing the first direction and electrically insulated via an interlayer insulating layer An input device is disclosed (for example, see Patent Document 2 below). However, since the capacitance type input device has a front plate laminated on the produced capacitance type input device, there is a problem that the capacitance type input device becomes thick and heavy.

Furthermore, a capacitive touch panel in which a mask layer, a sense circuit, and an interlayer insulating layer are integrally formed on the non-contact side surface of the front plate is disclosed (for example, see Patent Document 3 below). Patent Document 3 describes that the capacitive touch panel has a front plate integrated with the capacitive input device, so that a thin layer / lightweight can be achieved. Is not listed.

On the other hand, ITO (Indium Tin Oxide) is used as the material for the first and second transparent electrodes. After vacuum deposition and patterning with a liquid resist (exposure / development), the portion not covered with the liquid resist is etched. A method of forming a desired transparent electrode pattern is disclosed (for example, see Patent Document 4). However, according to this method, there is a problem that the manufacturing apparatus is expensive and the cost reduction is not easy.

In addition, a protective plate (glass or acrylic plate) provided on the outside (side closer to the contact surface) of the touch panel body and the touch panel body including the single or plural substrates and the electrode patterns arranged and formed on these substrates. A pressure-sensitive adhesive sheet is used as a bonding method, and an air layer is prevented from being generated between the touch panel main body and the protective plate, and brightness / contrast reduction due to reflection at the air layer interface (for example, patent document) 5), and a method of applying and bonding a curable resin under reduced pressure (for example, see Patent Document 6). However, since the pressure-sensitive adhesive sheet is expensive, there is a problem in that the addition of material cost is large, and since the pressure-sensitive adhesive sheet is thick, it is difficult to reduce the thickness and make the thickness of the adhesive layer uniform.

Furthermore, a method for producing a transparent electrode pattern is disclosed in which a (metal) nanoparticle dispersion is patterned as a material for the first and second transparent electrodes by screen printing, offset printing, and ink jet printing, and then fired ( For example, see Patent Document 7). According to the manufacturing method, the electrode pattern is easily manufactured for the time being, the cost can be easily reduced, and a conductive element group (electrode pattern) and an insulating layer can be directly provided on the protective plate. It is disclosed that it will become possible (see, for example, Patent Document 7). However, even with this method, there is a problem that the electrode pattern is thin and the linearity of the pattern is insufficient.

JP 2007-122326 A Japanese Patent No. 4506785 JP 2009-193587 US Patent Application Publication No. 2008-0264699 JP 2008-083491 A JP 2004-325788 A JP 2010-146283 A

On the other hand, smartphones and tablet PCs equipped with a capacitive touch panel on a liquid crystal or organic EL display have been developed using tempered glass typified by Corning's gorilla glass on the front plate (the surface directly touched by a finger). , Has been announced. In addition, a part of the front plate in which an opening for installing a pressure-sensitive (mechanical mechanism by pressing rather than capacitance change) switch is formed on the market. Since these tempered glasses have high strength and are difficult to process, it is common to form the opening before forming the opening and then performing the tempering treatment.

When a transparent electrode pattern is formed on a substrate after this strengthening process with an opening using a liquid resist for etching, a resist pattern from the opening and a light shielding pattern are formed to the border of the front plate. There is a problem that the resist component protrudes from the glass edge in the mask layer that needs to be done, and the back side of the substrate is contaminated. In the method of forming a mask layer and a transparent electrode pattern using a dry film resist in which only a photocurable resin layer is formed on a temporary support, the mask layer installed on the back side of the front plate needs to be light-shielding. Regardless of this, a mask layer that generates light leakage due to air bubbles during dry film lamination, or requires a certain thickness (several microns for a black layer, about 30 microns for a white layer) from the viewpoint of light shielding properties. When the dry film is laminated across the back of the front plate and the back of the front plate, there is a problem that bubbles remain in the thickness difference portion of the mask layer.

SUMMARY OF THE INVENTION An object of the present invention is to provide a capacitive input device manufacturing method capable of producing a high-quality capacitive input device capable of thin layer / weight reduction by a simple process, and the manufacturing method. And an image display device using the capacitance input device.

[1] A method for manufacturing a capacitance-type input device having a front plate and at least the following elements (1) to (5) on the non-contact side of the front plate, the method according to (1) to (5) A method for manufacturing a capacitive input device, wherein at least one element is formed using a photosensitive film having a temporary support, a thermoplastic resin layer, and a photocurable resin layer in this order.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern

[2] The method for manufacturing a capacitive input device according to [1], further comprising a transparent protective layer disposed so as to cover all or part of the elements (1) to (5).

[3] The method for manufacturing a capacitive input device according to [2], wherein the transparent protective layer is formed using the photosensitive film.

[4] Etching a transparent conductive material using at least one of the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element using an etching pattern formed by the photosensitive film. The method for manufacturing a capacitive input device according to any one of [1] to [3].

[5] The photocurable resin layer of the photosensitive film is a conductive photocurable resin layer, and the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element The method for manufacturing a capacitive input device according to any one of [1] to [3], wherein at least one is formed using the photosensitive film.

[6] At least one of the first transparent electrode pattern and the second transparent electrode pattern spans both regions of the non-contact surface of the front plate and the surface of the mask layer opposite to the front plate. The method for manufacturing a capacitance-type input device according to any one of [1] to [5].

[7] The capacitive input device according to any one of [1] to [6], wherein the conductive element is disposed at least on a surface side opposite to the front plate of the mask layer. Production method.

[8] In the photosensitive film, the thermoplastic resin layer has a thickness of 3 to 30 μm, and the viscosity of the thermoplastic resin layer measured at 100 ° C. is in the region of 1000 to 10,000 Pa · sec. The viscosity of the thermoplastic resin layer measured at 100 ° C. is in the range of 2000 to 50000 Pa · sec, and the viscosity of the thermoplastic resin layer is lower than the viscosity of the photocurable resin layer [1] to [7] A method for manufacturing a capacitive input device according to any one of the above.

[9] A surface treatment is performed on the non-contact surface of the front plate, and the photosensitive film is placed on the non-contact surface of the front plate subjected to the surface treatment. Any one of [1] to [8] The manufacturing method of the electrostatic capacitance type input device of description.

[10] The method for manufacturing a capacitive input device according to [9], wherein a silane compound is used for the surface treatment of the front plate.

[11] The method for manufacturing a capacitive input device according to any one of [1] to [10], wherein the front plate has an opening at least in part.

[12] A capacitive input device manufactured by the method for manufacturing a capacitive input device according to any one of [1] to [11].

[13] An image display device including a capacitive input device manufactured by the method for manufacturing a capacitive input device according to any one of [1] to [11] as a constituent element.

Advantageous Effects of Invention According to the present invention, a capacitive input device manufacturing method capable of manufacturing a high-quality capacitive input device capable of thin layer / weight reduction by a simple process, and the manufacturing method. Can provide an electrostatic capacitance type input device and an image display device using the electrostatic capacitance type input device.

It is sectional drawing which shows the structure of the electrostatic capacitance type input device of this invention. It is explanatory drawing which shows an example of the front plate in this invention. It is explanatory drawing which shows an example of the 1st transparent electrode pattern in this invention, and a 2nd transparent electrode pattern. It is a top view which shows an example of the tempered glass in which the opening part was formed. It is a top view which shows an example of the front board in which the mask layer was formed. It is a top view which shows an example of the front plate in which the 1st transparent electrode pattern was formed. It is a top view which shows an example of the front plate in which the 1st and 2nd transparent electrode pattern was formed. It is a top view which shows an example of the front plate in which the electroconductive element different from the 1st and 2nd transparent electrode pattern was formed. It is explanatory drawing which shows a metal nanowire cross section.

Hereinafter, a method for manufacturing a capacitance-type input device, a capacitance-type input device, and an image display device of the present invention will be described.

The method for manufacturing a capacitance-type input device of the present invention (hereinafter sometimes simply referred to as “the manufacturing method of the present invention”) includes at least the following (1) on the front plate and the non-contact side of the front plate. A photosensitive film having elements (1) to (5), and having at least one of the elements (1) to (5), a temporary support, a thermoplastic resin layer, and a photocurable resin layer in this order. Use to form.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern

First, the configuration of the capacitive input device formed by the manufacturing method of the present invention will be described. FIG. 1 is a cross-sectional view showing a configuration of a capacitive input device of the present invention. In FIG. 1, the capacitive input device 10 includes a front plate 1, a mask layer 2, a first transparent electrode pattern 3, a second transparent electrode pattern 4, an insulating layer 5, and a conductive element 6. , And a transparent protective layer 7.

The front plate 1 is composed of a light-transmitting substrate such as a glass substrate, and tempered glass represented by Corning's gorilla glass can be used. Moreover, in FIG. 1, the side in which each element of the front layer 1 is provided is called a non-contact surface. In the capacitive input device 10 of the present invention, input is performed by bringing a finger or the like into contact with the contact surface (the surface opposite to the non-contact surface) of the front plate 1. Hereinafter, the front plate may be referred to as a “base material”.

A mask layer 2 is provided on the non-contact surface of the front plate 1. The mask layer 2 is a frame-shaped pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so that the lead wiring and the like cannot be seen.
As shown in FIG. 2, the capacitive input device 10 of the present invention is provided with a mask layer 2 so as to cover a part of the front plate 1 (a region other than the input surface in FIG. 2). Yes. Further, the front plate 1 can be provided with an opening 8 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 8.

On the contact surface of the front plate 1, a plurality of first transparent electrode patterns 3 formed by extending a plurality of pad portions in the first direction via connection portions; A plurality of second transparent electrode patterns 4 made of a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction, the first transparent electrode pattern 3 and the second An insulating layer 5 that electrically insulates the transparent electrode pattern 4 is formed. The first transparent electrode pattern 3, the second transparent electrode pattern 4, and the conductive element 6 to be described later are, for example, translucent conductive materials such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide). It can be made of a conductive metal oxide film. Examples of such a metal film include an ITO film; a metal film such as Al, Zn, Cu, Fe, Ni, Cr, and Mo; and a metal oxide film such as SiO ₂ . At this time, the film thickness of each element can be set to 10 to 200 nm. Further, since the amorphous ITO film is made into a polycrystalline ITO film by firing, the electrical resistance can be reduced. Moreover, said 1st transparent electrode pattern 3, the 2nd transparent electrode pattern 4, and the electroconductive element 6 mentioned later use the photosensitive film which has the photocurable resin layer using the said conductive fiber. It can also be manufactured. In addition, when the first conductive pattern or the like is formed of ITO or the like, paragraphs [0014] to [0016] of Japanese Patent No. 4506785 can be referred to.

In addition, at least one of the first transparent electrode pattern 3 and the second transparent electrode pattern 4 extends over both the non-contact surface of the front plate 1 and the region of the mask layer 2 opposite to the front plate 1. Can be installed. In FIG. 1, a diagram is shown in which the second transparent electrode pattern is installed across both areas of the non-contact surface of the front plate 1 and the surface opposite to the front plate 1 of the mask layer 2. Yes. Thus, even when a photosensitive film is laminated across the mask layer and the back surface of the front plate that require a certain thickness, the use of the photosensitive film having the specific layer structure of the present invention can increase the cost of vacuum laminators and the like. Even without using a simple facility, it is possible to perform lamination without generating bubbles at the boundary of the mask portion with a simple process.

The first transparent electrode pattern 3 and the second transparent electrode pattern 4 will be described with reference to FIG. FIG. 3 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern in the present invention. As shown in FIG. 3, the first transparent electrode pattern 3 is formed such that the pad portion 3a extends in the first direction via the connection portion 3b. The second transparent electrode pattern 4 is electrically insulated by the first transparent electrode pattern 3 and the insulating layer 5 and extends in a direction intersecting the first direction (second direction in FIG. 3). It is constituted by a plurality of pad portions that are formed. Here, when the first transparent electrode pattern 3 is formed, the pad portion 3a and the connection portion 3b may be manufactured as one body, or only the connection portion 3b is manufactured and the pad portion 3a and the second portion 3b are formed. The transparent electrode pattern 4 may be integrally formed (patterned). When the pad portion 3a and the second transparent electrode pattern 4 are produced (patterned) as a single body (patterning), as shown in FIG. 3, a part of the connection part 3b and a part of the pad part 3a are connected, and an insulating layer is formed. Each layer is formed so that the first transparent electrode pattern 3 and the second transparent electrode pattern 4 are electrically insulated by 5.

In FIG. 1, a conductive element 6 is provided on the surface of the mask layer 2 opposite to the front plate 1. The conductive element 6 is electrically connected to at least one of the first transparent electrode pattern 3 and the second transparent electrode pattern 4, and is different from the first transparent electrode pattern 3 and the second transparent electrode pattern 4. Is another element. In FIG. 1, a view in which the conductive element 6 is connected to the second transparent electrode pattern 4 is shown.

Moreover, in FIG. 1, the transparent protective layer 7 is installed so that all of each component may be covered. The transparent protective layer 7 may be configured to cover only a part of each component. The insulating layer 5 and the transparent protective layer 7 may be made of the same material or different materials. The material constituting the insulating layer 5 and the transparent protective layer 7 is preferably a material having high surface hardness and high heat resistance, and a known photosensitive siloxane resin material, acrylic resin material, or the like is used.

In the manufacturing method of this invention, the mask layer 2, the 1st transparent electrode pattern 3, the 2nd transparent electrode pattern 4, the insulating layer 5, the electroconductive element 6, and the transparent protective layer 7 as needed. At least one element is formed using the photosensitive film of the present invention having the temporary support, the thermoplastic resin layer, and the photocurable resin layer in this order.
The mask layer 2, the insulating layer 5 and the transparent protective layer 7 can be formed by transferring a photocurable resin layer to the front plate 1 using the photosensitive film of the present invention. For example, when the black mask layer 2 is formed, the black light curing is performed on the surface of the front plate 1 using the photosensitive film having the black photocurable resin layer as the photocurable resin layer. It can be formed by transferring the conductive resin layer. When the insulating layer 5 is formed, the front plate on which the first transparent electrode pattern is formed using the photosensitive film having an insulating photocurable resin layer as the photocurable resin layer. It can be formed by transferring the photocurable resin layer to the surface of 1. When the transparent protective layer 7 is formed, the photosensitive film in the present invention having a transparent photocurable resin layer as the photocurable resin layer is used, and the surface of the front plate 1 on which each element is formed is used. It can be formed by transferring the photocurable resin layer.

When the mask layer 2 or the like is formed by using the photosensitive film, there is no resist component leakage from the opening even on the substrate (front plate) having an opening, and it is necessary to form a light-shielding pattern from the opening to the boundary of the front plate. Since there is no protrusion of the resist component from the glass edge in the mask layer, it is possible to manufacture a touch panel having a merit of thin layer / light weight by a simple process without contaminating the back side of the substrate.
Furthermore, in forming the mask layer 2 that needs light shielding properties, the photosensitive film according to the present invention having a specific layer structure having a thermoplastic resin layer between the photocurable resin layer and the temporary support is used for photosensitivity. Generation of air bubbles during the laminating of the conductive film can be prevented, and the high-quality mask layer 2 and the like having no light leakage can be formed.

Said 1st transparent electrode pattern 3, the 2nd transparent electrode pattern 4, and the electroconductive element 6 can be formed using the photosensitive film in this invention which has an etching process or a conductive photocurable resin layer.
When the first transparent electrode pattern 3, the second transparent electrode pattern 4 and another conductive element 6 are formed by etching, ITO is first formed on the non-contact surface of the front plate 1 on which the mask layer 2 and the like are formed. A transparent electrode layer such as is formed by sputtering. Next, an etching pattern is formed by exposure and development using the photosensitive film according to the present invention having an etching photocurable resin layer as the photocurable resin layer on the transparent electrode layer. Thereafter, the transparent electrode layer is etched to pattern the transparent electrode, and the etching pattern is removed, whereby the first transparent electrode pattern 3 and the like can be formed.

When the first transparent electrode pattern 3, the second transparent electrode pattern 4, and another conductive element 6 are formed using the photosensitive film of the present invention having a conductive photocurable resin layer, the front plate 1 It can be formed by transferring the conductive photocurable resin layer to the surface.
When the first transparent electrode pattern 3 or the like is formed using a photosensitive film having the conductive photocurable resin layer, there is no leakage of resist components from the opening portion even on a substrate (front plate) having an opening portion. Without contaminating the back side of the substrate, it is possible to manufacture a touch panel having a merit of thin layer / light weight by a simple process.
Furthermore, the photosensitive film in the present invention having a specific layer structure having a thermoplastic resin layer between the conductive photocurable resin layer and the temporary support is used for forming the first transparent electrode pattern 3 and the like. Thus, it is possible to prevent the generation of bubbles during lamination of the photosensitive film, and to form the first transparent electrode pattern 3, the second transparent electrode pattern 4, and another conductive element 6 with excellent conductivity and low resistance.

Examples of embodiments formed in the course of the manufacturing method of the present invention include the embodiments shown in FIGS. FIG. 4 is a top view illustrating an example of the tempered glass 11 in which the opening 8 is formed. FIG. 5 is a top view showing an example of the front plate on which the mask layer 2 is formed. FIG. 6 is a top view showing an example of the front plate on which the first transparent electrode pattern 3 is formed. FIG. 7 is a top view showing an example of a front plate on which the first transparent electrode pattern 3 and the second transparent electrode pattern 4 are formed. FIG. 8 is a top view showing an example of a front plate on which conductive elements 6 different from the first and second transparent electrode patterns are formed. These show examples embodying the above description, and the scope of the present invention is not limitedly interpreted by these drawings.

<< Photosensitive film in the present invention >>
Next, the photosensitive film in this invention used for the manufacturing method of this invention is demonstrated. The photosensitive film in this invention has a thermoplastic resin layer between a temporary support body and a photocurable resin layer. When a mask layer or the like is formed using a photosensitive film that does not have the thermoplastic resin layer, bubbles are generated in the element formed by transferring the photocurable resin layer, and image unevenness occurs in the image display device. In addition, excellent display characteristics cannot be obtained.
The photosensitive film used in the present invention may be a negative material or a positive material.

<Temporary support>
As the temporary support, a material that is flexible and does not cause significant deformation, shrinkage, or elongation under pressure or under pressure and heating can be used. Examples of such a support include a polyethylene terephthalate film, a cellulose triacetate film, a polystyrene film, and a polycarbonate film, and among them, a biaxially stretched polyethylene terephthalate film is particularly preferable.

The thickness of the temporary support is not particularly limited, and is generally in the range of 5 to 200 μm. In view of ease of handling and versatility, the thickness of 10 to 150 μm is particularly preferable.
Further, the temporary support may be transparent or may contain dyed silicon, alumina sol, chromium salt, zirconium salt or the like.
Further, the temporary support of the present invention can be imparted with conductivity by the method described in JP-A-2005-221726.

<Thermoplastic resin layer>
In the photosensitive film of the present invention, a thermoplastic resin layer is provided between the temporary support and the colored photosensitive resin layer. The thermoplastic resin layer is preferably alkali-soluble. The thermoplastic resin layer plays a role as a cushioning material so as to be able to absorb unevenness of the underlying surface (including unevenness due to already formed images, etc.). It is preferable to have a property that can be deformed.

The thermoplastic resin layer preferably includes an organic polymer substance described in JP-A-5-72724 as a component. The Vicat method [specifically, a polymer obtained by American Material Testing Method ASTM D1235] An embodiment containing at least one selected from organic polymer substances having a softening point of about 80 ° C. or less according to the softening point measurement method] is particularly preferable.

Specifically, polyolefins such as polyethylene and polypropylene, ethylene copolymers with ethylene and vinyl acetate or saponified products thereof, copolymers of ethylene and acrylic acid esters or saponified products thereof, polyvinyl chloride and vinyl chloride, Vinyl chloride copolymer with vinyl acetate or saponified product thereof, polyvinylidene chloride, vinylidene chloride copolymer, polystyrene, styrene copolymer with styrene and (meth) acrylic acid ester or saponified product thereof, polyvinyl toluene, Vinyl toluene copolymer of vinyl toluene and (meth) acrylic acid ester or saponified product thereof, poly (meth) acrylic acid ester, (meth) acrylic acid ester copolymer weight of butyl (meth) acrylate and vinyl acetate, etc. Copolymer, vinyl acetate copolymer nylon, copolymer nylon N- alkoxymethyl nylon, and organic polymers such as polyamide resins such as N- dimethylamino nylon.

The layer thickness of the thermoplastic resin layer is preferably 3 to 30 μm. When the thickness of the thermoplastic resin layer is less than 3 μm, followability at the time of lamination may be insufficient, and unevenness on the base surface may not be completely absorbed. In addition, when the layer thickness exceeds 30 μm, a load is applied to drying (solvent removal) at the time of forming the thermoplastic resin layer on the temporary support, or it takes time to develop the thermoplastic resin layer, May deteriorate process suitability. The thickness of the thermoplastic resin layer is more preferably 4 to 25 μm, and particularly preferably 5 to 20 μm.

The thermoplastic resin layer can be formed by applying a preparation liquid containing a thermoplastic organic polymer, and the preparation liquid used for the application can be prepared using a solvent. The solvent is not particularly limited as long as it can dissolve the polymer component constituting the layer, and examples thereof include methyl ethyl ketone, cyclohexanone, propylene glycol monomethyl ether acetate, n-propanol, 2-propanol and the like.

<Photocurable resin layer>
The photosensitive film in this invention adds an additive to a photocurable resin layer according to the use. That is, when using the said photosensitive film for formation of a mask layer, a coloring agent is contained in a photocurable resin layer. Moreover, when the photosensitive film in this invention has an electroconductive photocurable resin layer, an electroconductive fiber etc. contain in the said photocurable resin layer.

When the photosensitive film in the present invention is a negative material, the photocurable resin layer preferably contains an alkali-soluble resin, a polymerizable compound, a polymerization initiator, or a polymerization initiation system. In addition, colorants, additives, and the like are used, but are not limited thereto.

Examples of the alkali-soluble resin contained in the photosensitive film used in the present invention include the polymers described in paragraphs [0025] of JP2011-95716A and paragraphs [0033] to [0052] of JP2010-237589A. Can be used.
As the polymerizable compound, the polymerizable compounds described in paragraphs [0023] to [0024] of Japanese Patent No. 4098550 can be used.
As the polymerization initiator or polymerization initiation system, the polymerizable compounds described in [0031] to [0042] described in JP2011-95716A can be used.

(Conductive photocurable resin layer (conductive fiber))
When the photosensitive film of the present invention in which the conductive photocurable resin layer is laminated is used for forming a transparent electrode pattern or another conductive element, the following conductive fibers are used for the photocurable resin layer. be able to.

There is no restriction | limiting in particular as a structure of an electroconductive fiber, Although it can select suitably according to the objective, A solid structure or a hollow structure is preferable.
Here, the fiber having a solid structure may be referred to as “wire”, and the fiber having a hollow structure may be referred to as “tube”. A conductive fiber having an average minor axis length of 5 nm to 1,000 nm and an average major axis length of 1 μm to 100 μm may be referred to as “nanowire”.
In addition, a conductive fiber having an average minor axis length of 1 nm to 1,000 nm, an average major axis length of 0.1 μm to 1,000 μm, and having a hollow structure may be referred to as “nanotube”.
The material of the conductive fiber is not particularly limited as long as it has conductivity, and can be appropriately selected according to the purpose. However, at least one of metal and carbon is preferable, and among these, The conductive fiber is particularly preferably at least one of metal nanowires, metal nanotubes, and carbon nanotubes.

[Metal nanowires]
-metal-
The material of the metal nanowire is not particularly limited. For example, at least one metal selected from the group consisting of the fourth period, the fifth period, and the sixth period of the long periodic table (IUPAC 1991) is preferable. More preferably, at least one metal selected from Group 2 to Group 14 is selected from Group 2, Group 8, Group 9, Group 10, Group 11, Group 12, Group 13, and Group 14. At least one metal selected from the group is more preferable, and it is particularly preferable to include it as a main component.

Examples of the metal include copper, silver, gold, platinum, palladium, nickel, tin, cobalt, rhodium, iridium, iron, ruthenium, osmium, manganese, molybdenum, tungsten, niobium, tantel, titanium, bismuth, antimony, and lead. And alloys thereof. Among these, in view of excellent conductivity, those mainly containing silver or those containing an alloy of silver and a metal other than silver are preferable.
Containing mainly silver means that the metal nanowire contains 50% by mass or more, preferably 90% by mass or more.
Examples of the metal used in the alloy with silver include platinum, osmium, palladium and iridium. These may be used alone or in combination of two or more.

-shape-
There is no restriction | limiting in particular as a shape of the said metal nanowire, According to the objective, it can select suitably, For example, it can take arbitrary shapes, such as a column shape, a rectangular parallelepiped shape, and the column shape from which a cross section becomes a polygon. In applications where high transparency is required, a cylindrical shape and a cross-sectional shape with rounded polygonal corners are preferred.
The cross-sectional shape of the metal nanowire can be examined by applying a metal nanowire aqueous dispersion on a substrate and observing the cross-section with a transmission electron microscope (TEM).
The corner of the cross section of the metal nanowire means a peripheral portion of a point that extends each side of the cross section and intersects with a perpendicular drawn from an adjacent side. Further, “each side of the cross section” is a straight line connecting these adjacent corners. In this case, the ratio of the “outer peripheral length of the cross section” to the total length of the “each side of the cross section” was defined as the sharpness. For example, in the metal nanowire cross section as shown in FIG. 9, the sharpness can be represented by the ratio of the outer peripheral length of the cross section indicated by the solid line and the outer peripheral length of the pentagon indicated by the dotted line. A cross-sectional shape having a sharpness of 75% or less is defined as a cross-sectional shape having rounded corners. The sharpness is preferably 60% or less, and more preferably 50% or less. If the sharpness exceeds 75%, the electrons may be localized at the corners, and plasmon absorption may increase, or the transparency may deteriorate due to yellowing or the like. Moreover, the linearity of the edge part of a pattern may fall and a shakiness may arise. The lower limit of the sharpness is preferably 30%, more preferably 40%.

-Average minor axis length diameter and average major axis length-
The average minor axis length of the metal nanowire (sometimes referred to as “average minor axis diameter” or “average diameter”) is preferably 150 nm or less, more preferably 1 nm to 40 nm, still more preferably 10 nm to 40 nm, 15 nm to 35 nm is particularly preferable.
When the average minor axis length is less than 1 nm, the oxidation resistance may be deteriorated and the durability may be deteriorated. When the average minor axis length is more than 150 nm, scattering due to metal nanowires occurs and sufficient transparency is obtained. There are times when you can't.
The average minor axis length of the metal nanowires was determined by observing 300 metal nanowires using a transmission electron microscope (TEM; manufactured by JEOL Ltd., JEM-2000FX). The average minor axis length of was determined. In addition, the shortest axis length when the short axis of the metal nanowire is not circular is the shortest axis.

The average major axis length (sometimes referred to as “average length”) of the metal nanowire is preferably 1 μm to 40 μm, more preferably 3 μm to 35 μm, and even more preferably 5 μm to 30 μm.
If the average major axis length is less than 1 μm, it may be difficult to form a dense network and sufficient conductivity may not be obtained. If it exceeds 40 μm, the metal nanowires are too long and manufactured. Sometimes entangled and agglomerates may occur during the manufacturing process.
The average major axis length of the metal nanowires was measured using, for example, a transmission electron microscope (TEM; manufactured by JEOL Ltd., JEM-2000FX), and 300 metal nanowires were observed. The average major axis length of the wire was determined. In addition, when the said metal nanowire was bent, the circle | round | yen which makes it an arc was considered and the value calculated from the radius and curvature was made into the major axis length.

The thickness of the conductive photocurable resin layer is preferably from 0.1 to 20 μm, and preferably from 0.5 to 18 μm, from the viewpoint of process suitability such as coating solution stability, drying during coating, and development time during patterning. Further preferred is 1 to 15 μm. The content of the conductive fiber based on the total solid content of the conductive photocurable resin layer is preferably 0.01 to 50% by mass, and 0.05 to 30% by mass from the viewpoints of conductivity and coating solution stability. % Is more preferable, and 0.1 to 20% by mass is particularly preferable.

(Mask layer (colorant))
Moreover, when using the photosensitive film used for this invention as a mask layer, a coloring agent can be used for a photocurable resin layer. As the colorant used in the present invention, known colorants (organic pigments, inorganic pigments, dyes, etc.) can be suitably used. In the present invention, in addition to the black colorant, a mixture of pigments such as red, blue, and green can be used.

When the photocurable resin layer is used as a black mask layer, it is preferable to include a black colorant from the viewpoint of optical density. Examples of the black colorant include carbon black, titanium carbon, iron oxide, titanium oxide, and graphite. Among these, carbon black is preferable.

When the photocurable resin layer is used as a white mask layer, white pigments described in paragraphs [0015] and [0114] of JP-A-2005-7765 can be used. For use as a mask layer of other colors, pigments or dyes described in paragraphs [0183] to [0185] of Japanese Patent No. 4546276 may be mixed and used. Specifically, pigments and dyes described in paragraph numbers [0038] to [0054] of JP-A-2005-17716, pigments described in paragraph numbers [0068] to [0072] of JP-A-2004-361447 The colorants described in paragraph numbers [0080] to [0088] of JP-A No. 2005-17521 can be preferably used.

The colorant (preferably a pigment, more preferably carbon black) is desirably used as a dispersion. This dispersion can be prepared by adding and dispersing a composition obtained by previously mixing the colorant and the pigment dispersant in an organic solvent (or vehicle) described later. The vehicle is a portion of a medium in which a pigment is dispersed when the paint is in a liquid state, and is a liquid component that binds to the pigment to form a coating film (binder) and dissolves and dilutes it. Component (organic solvent).
The disperser used for dispersing the pigment is not particularly limited. For example, the kneader described in Kazuzo Asakura, “Encyclopedia of Pigments”, first edition, Asakura Shoten, 2000, 438, Known dispersing machines such as a roll mill, an atrider, a super mill, a dissolver, a homomixer, and a sand mill can be used. Further, fine grinding may be performed using frictional force by mechanical grinding described on page 310 of the document.

The colorant used in the present invention preferably has a number average particle size of 0.001 μm to 0.1 μm, more preferably 0.01 μm to 0.08 μm, from the viewpoint of dispersion stability. The “particle diameter” as used herein refers to the diameter when the electron micrograph image of the particle is a circle of the same area, and the “number average particle diameter” is the above-mentioned particle diameter for a large number of particles, This 100 average value is said.

The layer thickness of the photocurable resin layer containing the colorant is preferably 0.5 to 10 μm, more preferably 0.8 to 5 μm, and particularly preferably 1 to 3 μm, from the viewpoint of thickness difference from other layers. The content of the colorant in the solid content of the colored photosensitive resin composition in the present invention is not particularly limited, but is preferably 15 to 70% by mass from the viewpoint of sufficiently shortening the development time. More preferably, it is ˜60% by mass, and further preferably 25˜50% by mass.
The total solid content as used in this specification means the total mass of the non-volatile component remove | excluding the solvent etc. from the coloring photosensitive resin composition.
When forming the insulating layer using the photosensitive film, the layer thickness of the photocurable resin layer is preferably from 0.1 to 5 μm, more preferably from 0.3 to 3 μm from the viewpoint of maintaining insulation. 0.5 to 2 μm is particularly preferable.
When the transparent protective layer is formed using the photosensitive film, the layer thickness of the photocurable resin layer is preferably 0.5 to 10 μm, and preferably 0.8 to 5 μm from the viewpoint of exerting sufficient surface protecting ability. More preferred is 1 to 3 μm.

<Additives>
Furthermore, an additive may be used for the photocurable resin layer. Examples of the additive include surfactants described in paragraph [0017] of Japanese Patent No. 4502784, paragraphs [0060] to [0071] of JP-A-2009-237362, and paragraph [ And the other additives described in paragraphs [0058] to [0071] of JP-A No. 2000-310706.
In addition, as the solvent for producing the photosensitive film by coating in the present invention, the solvents described in paragraphs [0043] to [0044] of JP-A No. 2011-95716 can be used.

As mentioned above, although the case where the photosensitive film in the present invention is a negative type material has been mainly described, the photosensitive film may be a positive type material. When the photosensitive film is a positive material, for example, a material described in JP-A-2005-221726 is used for the photocurable resin layer, but the material is not limited thereto.

<Viscosity of thermoplastic resin layer and photocurable resin layer>
The viscosity of the thermoplastic resin layer in the present invention measured at 100 ° C. is in the region of 1000 to 10,000 Pa · sec, the viscosity of the photocurable resin layer measured in 100 ° C. is in the region of 2000 to 50000 Pa · sec, and It is preferable to satisfy the formula (A).
Formula (A): Viscosity of thermoplastic resin layer <viscosity of photocurable resin layer

Here, the viscosity of each layer can be measured as follows. The solvent is removed from the coating solution for the thermoplastic resin layer or the photocurable resin layer by drying under atmospheric pressure and reduced pressure to obtain a measurement sample. For example, as a measuring instrument, Vibron (DD-III type: manufactured by Toyo Baldwin Co., Ltd.) Can be used under the conditions of a measurement start temperature of 50 ° C., a measurement end temperature of 150 ° C., a heating rate of 5 ° C./min, and a frequency of 1 Hz / deg, and a measurement value of 100 ° C. can be used.

<Other layers>
For the photosensitive film used in the present invention, an intermediate layer is provided between the photocurable resin layer and the thermoplastic resin layer, or a protective film is further provided on the surface of the photocurable resin layer. Can be configured.

In the photosensitive film used in the present invention, it is preferable to provide an intermediate layer for the purpose of preventing mixing of components during coating of a plurality of layers and during storage after coating. As the intermediate layer, an oxygen-blocking film having an oxygen-blocking function, which is described as “separation layer” in JP-A-5-72724, is preferable, which increases sensitivity during exposure and reduces the time load of the exposure machine. And productivity is improved.

As the intermediate layer and the protective film, those described in paragraphs [0083] to [0087] and [0093] of JP-A-2006-259138 can be appropriately used.

<Method for producing photosensitive film>
The photosensitive film in the present invention can be produced according to the method for producing a photosensitive transfer material described in paragraphs [0094] to [0098] of JP-A-2006-259138.
When the photosensitive film of the present invention having an intermediate layer is specifically formed, a solution (thermoplastic resin layer coating solution) in which an additive is dissolved together with a thermoplastic organic polymer is formed on a temporary support. After coating and drying to provide a thermoplastic resin layer, a prepared solution (intermediate layer coating solution) prepared by adding a resin or an additive to a solvent that does not dissolve the thermoplastic resin layer on this thermoplastic resin layer The intermediate layer is applied by coating and drying, and a coating solution for a colored photosensitive resin layer prepared using a solvent that does not dissolve the intermediate layer is further applied onto the intermediate layer, and the colored photosensitive resin layer is dried and applied. Can be suitably produced.

<< Method for Manufacturing Capacitive Input Device of the Present Invention >>
As described above, the method for manufacturing a capacitance-type input device according to the present invention includes a mask layer, a first transparent electrode pattern, a second transparent electrode pattern, an insulating layer, a conductive element, and as necessary. At least one element of the transparent protective layer is formed using the photosensitive film of the present invention having the temporary support, the thermoplastic resin layer, and the photocurable resin layer in this order.

The permanent material such as the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element in the case of using the mask layer, the insulating layer, the transparent protective layer, and the conductive photocurable resin layer is photosensitive in the present invention. In the case of forming with a photosensitive film, the photosensitive film is laminated to the substrate and then exposed to the required pattern. In the case of negative type material, the non-exposed part is developed. In the case of positive type material, the exposed part is developed. A pattern can be obtained by processing and removing. At this time, the development may be performed by removing the thermoplastic resin layer and the photocurable layer with separate liquids or with the same liquid. You may combine well-known image development facilities, such as a brush and a high pressure jet, as needed. After the development, post-exposure and post-bake may be performed as necessary.

Also, in order to enhance the adhesion of the photosensitive resin layer by lamination in the subsequent transfer step, a surface treatment can be applied to the non-contact surface of the base material (front plate) in advance. As the surface treatment, it is preferable to perform a surface treatment (silane coupling treatment) using a silane compound. As the silane coupling agent, those having a functional group that interacts with the photosensitive resin are preferable. For example, a silane coupling solution (N-β (aminoethyl) γ-aminopropyltrimethoxysilane 0.3% by mass aqueous solution, trade name: KBM603, manufactured by Shin-Etsu Chemical Co., Ltd.) is sprayed for 20 seconds by a shower, and pure water shower washing is performed. To do. Thereafter, the reaction is carried out by heating. A heating tank may be used, and the reaction can be promoted by preheating the substrate of the laminator.

The first transparent electrode layer, the second transparent electrode layer, and other conductive members can also be formed using the photosensitive film of the present invention as a lift-off material. In this case, after patterning using the photosensitive film in the present invention, a transparent conductive layer is formed on the entire surface of the substrate, and then the photoconductive resin layer in the present invention is dissolved and removed together with the deposited transparent conductive layer. The transparent conductive layer pattern can be obtained (lift-off method).

(When forming a permanent material using the photosensitive film of the present invention)
In the case where the permanent material is formed using the photosensitive film of the present invention, the patterning method using the photosensitive film of the present invention will be described by taking a method of forming a mask layer (black) as an example.

The method for forming the mask layer includes a cover film removing step of removing the cover film from the photosensitive film in the present invention, and the photosensitive resin layer of the photosensitive transfer material from which the cover film has been removed on the substrate. A transfer step of transferring to the substrate, an exposure step of exposing the photosensitive resin layer transferred onto the substrate, and a development step of developing the exposed photosensitive resin layer to obtain a pattern image. It is done.

-Transfer process-
The transfer step is a step of transferring the photocurable resin layer of the photosensitive film from which the cover film has been removed onto a substrate.
At this time, a method of removing the temporary support after laminating the photocurable resin layer of the photosensitive film on the substrate is preferable.
Transfer (bonding) of the photocurable resin layer to the surface of the substrate is performed by stacking the photocurable resin layer on the surface of the substrate, pressurizing and heating. For laminating, known laminators such as a laminator, a vacuum laminator, and an auto-cut laminator that can further increase productivity can be used.

-Exposure process, development process, and other processes-
As examples of the exposure step, the development step, and other steps, the methods described in paragraph numbers [0035] to [0051] of JP-A-2006-23696 can be preferably used in the present invention.

The exposure step is a step of exposing the photocurable resin layer transferred onto the substrate.
Specifically, there is a method in which a predetermined mask is disposed above the photocurable resin layer formed on the substrate, and then exposed from above the mask through the mask, the thermoplastic resin layer, and the intermediate layer. Can be mentioned.
Here, the light source for the exposure can be appropriately selected and used as long as it can irradiate light in a wavelength region capable of curing the photocurable resin layer (for example, 365 nm, 405 nm, etc.). Specifically, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a metal halide lamp, etc. are mentioned. The exposure amount is usually about 5 to 200 mJ / cm ² , preferably about 10 to 100 mJ / cm ² .

The developing step is a step of developing the exposed photocurable resin layer.
The development can be performed using a developer. The developer is not particularly limited, and known developers such as those described in JP-A-5-72724 can be used. In addition, the developer preferably has a photo-curing resin layer having a dissolution-type developing behavior, for example, a solution containing a compound having a pKa = 7 to 13 at a concentration of 0.05 to 5 mol / L, and more preferably water. A small amount of an organic solvent that is miscible with may be added. Examples of organic solvents miscible with water include methanol, ethanol, 2-propanol, 1-propanol, butanol, diacetone alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-butyl ether, benzyl alcohol And acetone, methyl ethyl ketone, cyclohexanone, ε-caprolactone, γ-butyrolactone, dimethylformamide, dimethylacetamide, hexamethylphosphoramide, ethyl lactate, methyl lactate, ε-caprolactam, N-methylpyrrolidone, and the like. The concentration of the organic solvent is preferably 0.1% by mass to 30% by mass. Further, a known surfactant can be added to the developer. The concentration of the surfactant is preferably 0.01% by mass to 10% by mass.

The development method may be any of paddle development, shower development, shower & spin development, dip development, and the like. Here, the shower development will be described. The uncured portion can be removed by spraying a developer onto the photocurable resin layer after exposure. When a thermoplastic resin layer or an intermediate layer is provided, an alkaline solution having a low solubility of the photocurable resin layer is sprayed by a shower or the like before development to remove the thermoplastic resin layer or the intermediate layer. It is preferable to keep it. Further, after the development, it is preferable to remove the development residue while spraying a cleaning agent or the like with a shower and rubbing with a brush or the like. The liquid temperature of the developer is preferably 20 ° C. to 40 ° C., and the pH of the developer is preferably 8 to 13.

The production method of the present invention may have other steps such as a post-exposure step and a post-bake step.

The patterning exposure may be performed after the temporary support is peeled off, or may be exposed before the temporary support is peeled off, and then the temporary support may be peeled off. Exposure through a mask or digital exposure using a laser or the like may be used.

(When the photosensitive film of the present invention is used as an etching resist)
Also when using the photosensitive film in this invention as an etching resist (etching pattern), a resist pattern can be obtained like the said method. For the etching, etching or resist stripping can be applied by a known method described in paragraphs [0048] to [0054] of JP 2010-152155 A.

For example, as an etching method, there is a commonly performed wet etching method of dipping in an etching solution. As an etching solution used for wet etching, an acid type or an alkaline type may be appropriately selected according to an object to be etched. Examples of acidic etching solutions include aqueous solutions of acidic components such as hydrochloric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid, and mixed aqueous solutions of acidic components and salts of ferric chloride, ammonium fluoride, potassium permanganate, and the like. Is done. As the acidic component, a combination of a plurality of acidic components may be used. In addition, alkaline type etching solutions include sodium hydroxide, potassium hydroxide, ammonia, organic amines, aqueous solutions of alkali components such as organic amine salts such as tetramethylammonium hydroxide, alkaline components and potassium permanganate. A mixed aqueous solution of a salt such as A combination of a plurality of alkali components may be used as the alkali component.

The temperature of the etching solution is not particularly limited, but is preferably 45 ° C. or lower. The resin pattern used as an etching mask (etching pattern) in the present invention is formed by using the above-described photocurable resin layer, so that it is particularly suitable for acidic and alkaline etching solutions in such a temperature range. Excellent resistance. Therefore, the resin pattern is prevented from peeling off during the etching process, and the portion where the resin pattern does not exist is selectively etched.
After the etching, a cleaning process and a drying process may be performed as necessary to prevent line contamination. The cleaning process is performed by cleaning the substrate with pure water for 10 to 300 seconds at room temperature, for example, and the air blowing pressure (about 0.1 to 5 kg / cm ² ) is appropriately adjusted using an air blow for the drying process. Just do it.

Next, the method of peeling the resin pattern is not particularly limited, and examples thereof include a method of immersing the substrate in a peeling solution being stirred at 30 to 80 ° C., preferably 50 to 80 ° C. for 5 to 30 minutes. The resin pattern used as an etching mask in the present invention exhibits excellent chemical resistance at 45 ° C. or lower as described above, but exhibits a property of swelling by an alkaline stripping solution when the chemical temperature is 50 ° C. or higher. . Due to such properties, when the peeling process is performed using a peeling solution of 50 to 80 ° C., there are advantages that the process time is shortened and the resin pattern peeling residue is reduced. That is, by providing a difference in chemical temperature between the etching process and the peeling process, the resin pattern used as an etching mask in the present invention exhibits good chemical resistance in the etching process, while in the peeling process. Good peelability will be exhibited, and both conflicting properties of chemical resistance and peelability can be satisfied.

Examples of the stripping solution include inorganic alkali components such as sodium hydroxide and potassium hydroxide, organic alkali components such as tertiary amine and quaternary ammonium salt, water, dimethyl sulfoxide, N-methylpyrrolidone, or these. What was melt | dissolved in this mixed solution is mentioned. You may peel by the spray method, the shower method, the paddle method etc. using the said peeling liquid.

<< Capacitance Input Device and Image Display Device Comprising Capacitance Input Device as Components >>
An electrostatic capacitance type input device obtained by the manufacturing method of the present invention and an image display device including the electrostatic capacitance type input device as a constituent element are “latest touch panel technology” (issued July 6, 2009, Inc.) Techno Times), supervised by Yuji Mitani, “Technology and Development of Touch Panels”, CMC Publishing (2004, 12), FPD International 2009 Forum T-11 Lecture Textbook, Cypress Semiconductor Corporation Application Note AN2292, etc. Can be applied.

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples unless it exceeds the gist thereof. Unless otherwise specified, “%” and “parts” are based on mass.
[Example 1]

<Formation of mask layer>
[Preparation of Photosensitive Film K1 for Forming Mask Layer]
On a 75 μm thick polyethylene terephthalate film temporary support, a coating solution for a thermoplastic resin layer having the following formulation H1 was applied and dried using a slit nozzle. Next, an intermediate layer coating solution having the following formulation P1 was applied and dried. Furthermore, the coating liquid for black photocurable resin layers which consists of the following prescription K1 was apply | coated and dried. In this way, the thermoplastic film layer having a dry film thickness of 15.1 μm, the intermediate layer having a dry film thickness of 1.6 μm, and the dry film thickness so that the optical density is 4.0 are formed on the temporary support. A 2.2 μm black photocurable resin layer was provided, and finally a protective film (12 μm thick polypropylene film) was pressure-bonded. In this way, a transfer material in which the temporary support, the thermoplastic resin layer, the intermediate layer (oxygen barrier film), and the black photocurable resin layer were integrated was prepared, and the sample name was designated as a mask layer forming photosensitive film K1.

(Coating solution for thermoplastic resin layer: Formulation H1)
Methanol: 11.1 parts by mass Propylene glycol monomethyl ether acetate: 6.36 parts by mass Methyl ethyl ketone: 52.4 parts by mass Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymerization composition ratio) (Molar ratio) =
55 / 11.7 / 4.5 / 28.8, molecular weight = 100,000, Tg≈70 ° C.)
: 5.83 parts by mass-Styrene / acrylic acid copolymer (copolymerization composition ratio (molar ratio) = 63/37,
Weight average molecular weight = 10,000, Tg≈100 ° C.): 13.6 parts by mass / monomer 1 (trade name: BPE-500, manufactured by Shin-Nakamura Chemical Co., Ltd.)
: 9.1 parts by mass / fluorine-based polymer: 0.54 parts by mass The above-mentioned fluorine-based polymer is 40 parts by C ₆ F ₁₃ CH ₂ CH ₂ OCOCH═CH ₂ and H (OCH (CH ₃ ) CH ₂ ) ₇ OCOCH. = a copolymer of _CH 2 55 parts of _{_{H (OCHCH 2) 7 OCOCH =}} CH 2 5 parts, weight average molecular weight 30,000, methyl ethyl ketone 30 wt% solution (trade name: Megafac F780F, Dainippon ink and chemicals Manufactured by Kogyo Co., Ltd.)
The viscosity at 120 ° C. after removing the solvent from the coating liquid H1 for the thermoplastic resin layer was 1500 Pa · sec.

(Coating liquid for intermediate layer: prescription P1)
Polyvinyl alcohol: 32.2 parts by mass (trade name: PVA205, manufactured by Kuraray Co., Ltd., saponification degree = 88%, polymerization degree 550)
・ Polyvinylpyrrolidone: 14.9 parts by mass (trade name: K-30, manufactured by IS Japan Co., Ltd.)
-Distilled water: 524 parts by mass-Methanol: 429 parts by mass

(Coating liquid for black light curable resin layer: Formula K1)
-K pigment dispersion 1: 31.2 parts by mass-R pigment dispersion 1 (the following composition): 3.3 parts by mass-MMPGAc (manufactured by Daicel Chemical Industries): 6.2 parts by mass-Methyl ethyl ketone (Tonen Chemical) (Manufactured by Co., Ltd.): 34.0 parts by mass / cyclohexanone (manufactured by Kanto Denka Kogyo Co., Ltd.): 8.5 parts by mass / binder 2 (random copolymer having a benzyl methacrylate / methacrylic acid = 78/22 molar ratio, weight (Average molecular weight 38,000): 10.8 parts by mass / phenothiazine (manufactured by Tokyo Chemical Industry Co., Ltd.): 0.01 parts by mass / DPHA (dipentaerythritol hexaacrylate, Nippon Kayaku Co., Ltd.)
Propylene glycol monomethyl ether acetate solution (76% by mass): 5.5 parts by mass. 2,4-bis (trichloromethyl) -6- [4 ′-(N, N-bis (ethoxycarbonylmethyl) amino- 3′-Bromophenyl] -s-triazine: 0.4 parts by mass / surfactant (trade name: Megafac F-780F, manufactured by Dainippon Ink Co., Ltd.): 0.1 parts by mass The viscosity at 100 ° C. after the solvent removal of the coating liquid K1 for the resin layer was 10,000 Pa · sec.
(Composition of K pigment dispersion 1)
・ Carbon black (trade name: Nippon 35, manufactured by Degussa)
: 13.1% by mass
・ The following dispersant 1: 0.65 mass%
Binder 1 (Random copolymer of benzyl methacrylate / methacrylic acid = 72/28 molar ratio, weight average molecular weight 37,000): 6.72% by mass
Propylene glycol monomethyl ether acetate: 79.53% by mass

-Composition of R Pigment Dispersion 1-
Pigment (CI Pigment Red 177): 18% by mass
Binder 1 (benzyl methacrylate / methacrylic acid = 72/28 molar ratio random copolymer, weight average molecular weight 37,000): 12% by mass
Propylene glycol monomethyl ether acetate: 70% by mass

[Formation of mask layer]
Next, the glass cleaner liquid adjusted to 25 ° C. was sprayed on a tempered glass (300 mm × 400 mm × 0.7 mm) in which an opening (15 mmΦ) was formed, and was washed with a rotating brush having nylon hair while spraying it for 20 seconds with a shower. After washing with pure water, a silane coupling solution (N-β (aminoethyl) γ-aminopropyltrimethoxysilane 0.3% by mass aqueous solution, trade name: KBM603, manufactured by Shin-Etsu Chemical Co., Ltd.) was washed with 20 Sprayed for 2 seconds and washed with pure water shower. This substrate was heated at 140 ° C. for 2 minutes with a substrate preheating device. The surface of the black photocurable resin layer exposed after removing the cover film from the photosensitive film K1 for mask layer formation obtained from the above to the obtained silane coupling treated glass substrate and the silane coupling treatment Laminator (manufactured by Hitachi Industries, Ltd. (Lamic II type)) using a laminator (Lamic II type), the substrate heated at 140 ° C., rubber roller temperature 130 ° C., linear pressure Lamination was performed at 100 N / cm and a conveyance speed of 2.2 m / min. Subsequently, the polyethylene terephthalate temporary support was peeled off at the interface with the thermoplastic resin layer to remove the temporary support. After peeling off the temporary support, the substrate and the exposure mask (quartz exposure mask with a frame pattern) were set up vertically with a proximity type exposure machine (manufactured by Hitachi High-Tech Electronics Engineering Co., Ltd.) having an ultra-high pressure mercury lamp. In this state, the distance between the exposure mask surface and the black light curable resin layer was set to 200 μm, and pattern exposure was performed at an exposure amount of 70 mJ / cm ² (i-line).

Next, a triethanolamine developer (containing 30% by mass of triethanolamine, trade name: T-PD2 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) at 33 ° C. for 60 seconds, Shower development was performed at a flat nozzle pressure of 0.1 MPa to remove the thermoplastic resin layer and the intermediate layer. Subsequently, air was blown onto the upper surface of the glass base material to drain the liquid, and then pure water was sprayed for 10 seconds by a shower, pure water shower washing was performed, and air was blown to reduce the liquid pool on the base material.

Thereafter, the shower pressure was reduced to 0.1 MPa at 32 ° C. using a sodium carbonate / sodium hydrogen carbonate developer (trade name: T-CD1 (manufactured by FUJIFILM Corporation) diluted 5 times with pure water). It was set, developed for 45 seconds, and washed with pure water.

Subsequently, using a surfactant-containing cleaning solution (trade name: T-SD3 (manufactured by Fuji Film Co., Ltd.) diluted 10-fold with pure water) at 33 ° C. for 20 seconds, cone-type nozzle pressure of 0.1 MPa The residue was removed by rubbing the formed pattern image with a rotating brush having soft nylon hairs. Furthermore, ultrapure water is sprayed at a pressure of 9.8 MPa with an ultrahigh pressure washing nozzle to remove residues,

Next, post-exposure is performed in the atmosphere at an exposure amount of 1300 mJ / cm ² , and further post-baking treatment is performed at 240 ° C. for 80 minutes to form a mask layer having an optical density of 4.0 and a film thickness of 2.0 μm. A face plate was obtained.

<Formation of first transparent electrode pattern>
[Formation of transparent electrode layer]
The front plate on which the mask layer was formed was introduced into a vacuum chamber, and DC magnetron sputtering (conditions) was performed using an ITO target (indium: tin = 95: 5 (molar ratio)) with a SnO ₂ content of 10% by mass. The ITO thin film having a thickness of 40 nm was formed at a substrate temperature of 250 ° C., an argon pressure of 0.13 Pa, and an oxygen pressure of 0.01 Pa) to obtain a front plate on which a transparent electrode layer was formed. The surface resistance of the ITO thin film was 80Ω / □.

[Preparation of Photosensitive Film E1 for Etching]
In the preparation of the mask layer forming photosensitive film K1, the photosensitivity for forming the mask layer was changed except that the coating solution for the black photocurable resin layer was replaced with the coating solution for the photocurable resin layer for etching having the following formulation E1. In the same manner as the preparation of the film K1, a photosensitive film E1 for etching was obtained (the film thickness of the photocurable resin layer for etching was 2.0 μm).

(Coating liquid for photocurable resin layer for etching: prescription E1)
Methyl methacrylate / styrene / methacrylic acid copolymer (copolymer composition (mass%): 31/40/29, mass average molecular weight 60000, acid value 163 mg KOH / g): 16 parts by mass Monomer 1 (trade name: BPE -500, Shin-Nakamura Chemical Co., Ltd.)
: 5.6 parts by mass-tetramethylene oxide monomethacrylate 0.5 mol adduct of hexamethylene diisocyanate: 7 parts by mass-cyclohexanedimethanol monoacrylate as a compound having one polymerizable group in the molecule: 2.8 parts by mass 2-Chloro-N-butylacridone: 0.42 parts by mass 2,2-bis (o-chlorophenyl) -4,4 ′, 5,5′-tetraphenylbiimidazole: 2.17 parts by mass Malachite Green oxalate: 0.02 parts by mass, leuco crystal violet: 0.26 parts by mass, phenothiazine: 0.013 parts by mass, surfactant (trade name: Megafac F-780F, manufactured by Dainippon Ink Co., Ltd.) : 0.03 parts by mass Ethyl ketone: 40 parts by mass 1-Methoxy-2-propanol: 20 parts by weight The viscosity of 100 ° C. After solvent removal in an etching photocurable resin layer coating solution E1 was 2500 Pa · sec.

[Formation of first transparent electrode pattern]

Similar to the formation of the mask layer, the front plate on which the transparent electrode layer was formed was washed and the photosensitive film E1 for etching from which the cover film was removed was laminated (base material temperature: 130 ° C., rubber roller temperature 120 ° C., wire Pressure 100 N / cm, conveyance speed 2.2 m / min). After peeling off the temporary support, the distance between the surface of the exposure mask (quartz exposure mask having a transparent electrode pattern) and the photocurable resin layer for etching is set to 200 μm, and the exposure dose is 50 mJ / cm ² (i-line). ) For pattern exposure.
Next, a triethanolamine developer (containing 30% by mass of triethanolamine, a trade name: T-PD2 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) at 25 ° C. for 100 seconds, A surfactant-containing cleaning solution (trade name: T-SD3 (manufactured by FUJIFILM Corporation) diluted 10-fold with pure water) was treated at 33 ° C. for 20 seconds, using a rotating brush and an ultra-high pressure cleaning nozzle. Residue removal was performed, and a post-bake treatment at 130 ° C. for 30 minutes was further performed to obtain a front plate on which a transparent electrode layer and a photocurable resin layer pattern for etching were formed.

The front plate on which the transparent electrode layer and the photocurable resin layer pattern for etching are formed is immersed in an etching bath containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and used for etching. The exposed transparent electrode layer not covered with the photocurable resin layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern having a photocurable resin layer pattern for etching.

Next, a front plate with a transparent electrode layer pattern with a photocurable resin layer pattern for etching is applied to a resist stripping solution (N-methyl-2-pyrrolidone, monoethanolamine, a surfactant (trade name: Surfynol 465). Before being formed in a resist stripping tank containing a liquid temperature of 45 ° C.), treated for 200 seconds, removing the photocurable resin layer for etching, and forming the mask layer and the first transparent electrode pattern. A face plate was obtained.

<Formation of insulating layer>
[Preparation of Insulating Layer Forming Photosensitive Film W1]
In the preparation of the photosensitive film K1 for mask layer formation, the photosensitivity for mask layer formation was changed except that the coating liquid for black photocurable resin layer was replaced with the coating liquid for photocurable resin layer for insulating layer having the following formulation W1. In the same manner as the preparation of the film K1, an insulating layer forming photosensitive film W1 was obtained (the film thickness of the insulating layer photocurable resin layer was 1.4 μm).

(Insulating layer forming coating solution: Formula W1)
Binder 3 (cyclohexyl methacrylate (a) / methyl methacrylate (b) / methacrylic acid copolymer (c) glycidyl methacrylate adduct (d) (composition (% by mass): a / b / c / d = 46/1) / 10/43, mass average molecular weight: 36000, acid value 66 mgKOH / g) 1-methoxy-2-propanol, methyl ethyl ketone solution (solid content: 45%))
: 12.5 parts by mass · DPHA (dipentaerythritol hexaacrylate, Nippon Kayaku Co., Ltd.) propylene glycol monomethyl ether acetate solution (76% by mass): 1.4 parts by mass · Urethane monomer (trade name: NK Oligo UA-32P, manufactured by Shin-Nakamura Chemical Co., Ltd .: non-volatile content 75%, propylene glycol monomethyl ether acetate: 25%): 0.68 parts by mass Tripentaerythritol octaacrylate (trade name: V # 802,
Osaka Organic Chemical Industry Co., Ltd.): 1.8 parts by mass. Diethylthioxanthone: 0.17 parts by mass. 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1-
[4- (4-morpholinyl) phenyl] -1-butanone (trade name: Irgacure 379, manufactured by BASF): 0.17 parts by mass Dispersant (trade name: Solsperse 20000, manufactured by Avicia)
: 0.19 parts by mass-Surfactant (trade name: MegaFuck F-780F, manufactured by Dainippon Ink)
: 0.05 parts by mass-Methyl ethyl ketone: 23.3 parts by mass-MMPGAc (manufactured by Daicel Chemical Co., Ltd.): 59.8 parts by mass The viscosity at 100 ° C. after removing the solvent of the coating liquid W1 for forming the insulating layer is 4000 Pa.・ It was sec.

In the same manner as the formation of the mask layer, the front plate with the first transparent electrode pattern was washed, subjected to silane coupling treatment, and laminated with the insulating film forming photosensitive film W1 from which the cover film was removed (base material temperature: 100 ° C., rubber roller temperature 120 ° C., linear pressure 100 N / cm, conveyance speed 2.3 m / min). After peeling off the temporary support, the distance between the exposure mask (quartz exposure mask having the insulating layer pattern) surface and the photocurable resin layer for etching is set to 100 μm, and the exposure dose is 30 mJ / cm ² (i Line).

Next, a triethanolamine developer (containing 30% by mass of triethanolamine, trade name: T-PD2 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) at 33 ° C. for 60 seconds, Sodium carbonate / bicarbonate developer (trade name: T-CD1 (Fuji Film Co., Ltd.) diluted 5-fold with pure water) at 25 ° C. for 50 seconds, surfactant-containing cleaning solution (trade name) : T-SD3 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water for 20 seconds at 33 ° C, and the residue is removed with a rotating brush and ultra-high pressure washing nozzle. A front baking process was performed for 60 minutes to obtain a front plate on which a mask layer, a first transparent electrode pattern, and an insulating layer pattern were formed.

<< Formation of second transparent electrode pattern >>
[Formation of transparent electrode layer]
In the same manner as the formation of the first transparent electrode pattern, the front plate on which the first transparent electrode pattern and the insulating layer pattern were formed was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa). An oxygen thin film having an oxygen pressure of 0.01 Pa and a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed. The surface resistance of the ITO thin film was 110Ω / □.

In the same manner as the formation of the first transparent electrode pattern, the first transparent electrode pattern, the insulating layer pattern, the transparent electrode layer, and the photocurable resin layer pattern for etching are formed using the etching photosensitive film E1. The obtained front plate was obtained (post-baking treatment; 130 ° C. for 30 minutes).
Further, in the same manner as in the formation of the first transparent electrode pattern, the mask layer is formed by etching (30 ° C. for 50 seconds) and removing the photocurable resin layer for etching (45 ° C. for 200 seconds). A front plate on which a transparent electrode pattern, an insulating layer pattern, and a second transparent electrode pattern were formed was obtained.

<< Formation of Conductive Element Separate from First and Second Transparent Electrode Pattern >>
Similar to the formation of the first and second transparent electrode patterns, the front plate on which the first transparent electrode pattern, the insulating layer pattern, and the second transparent electrode pattern were formed was subjected to DC magnetron sputtering treatment to a thickness of 200 nm. A front plate on which an aluminum (Al) thin film was formed was obtained.

Similar to the formation of the first and second transparent electrode patterns, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the photocuring for etching are performed using the etching photosensitive film E1. A front plate on which a conductive resin layer pattern was formed was obtained. (Post-bake treatment; 130 ° C. for 30 minutes).
Further, in the same manner as in the formation of the first transparent electrode pattern, the mask layer is formed by etching (30 ° C. for 50 seconds) and removing the photocurable resin layer for etching (45 ° C. for 200 seconds). A front plate on which conductive elements different from the transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns were formed was obtained.

<Formation of transparent protective layer>
In the same manner as the formation of the insulating layer, the insulating film forming photosensitive film W1 from which the cover film has been removed is laminated on the front plate formed up to the conductive element different from the first and second transparent electrode patterns, After the temporary support is peeled off, front exposure is performed with an exposure amount of 50 mJ / cm ² (i-line) without using an exposure mask, development, post-exposure (1000 mJ / cm ² ), and post-baking treatment are performed. Before laminating the insulating layer (transparent protective layer) so as to cover all the conductive elements different from the one transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns A face plate 1 was obtained.

<< Production of image display device (touch panel) >>
The liquid crystal display element manufactured by the method described in Japanese Patent Application Laid-Open No. 2009-47936 is bonded to the previously manufactured front plate, and the image display device 1 including a capacitive input device as a constituent element is manufactured by a known method. did.

<< Evaluation of Front Plate 1 and Image Display Device 1 >>
In each of the above-described steps, the mask layer, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 1 on which a conductive element different from the first and second transparent electrode patterns is formed is In addition, the opening and the back surface were free from contamination, easy to clean, and there was no problem of contamination of other members.
Also, the mask layer had no pinholes and was excellent in light shielding properties.
And there is no problem in each conductivity of the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element different from these, while the first transparent electrode pattern and the second transparent electrode pattern It had insulation between the transparent electrode patterns.
Furthermore, the transparent protective layer was free from defects such as bubbles and an image display device having excellent display characteristics was obtained.

[Example 2]
<< Production of Photosensitive Film C1 Laminated with Conductive Photocurable Resin Layer >>
In the preparation of the photosensitive film K1 for forming a mask layer, the photosensitivity for forming a mask layer was changed except that the coating liquid for forming a black photocurable resin layer was replaced with a coating liquid for forming a conductive photocurable resin layer having the following formulation C1. In the same manner as the preparation of the film K1, a photosensitive film C1 having a conductive photocurable resin layer laminated thereon was obtained (the film thickness of the conductive photocurable resin layer was 2.0 μm).

<Preparation of coating liquid for forming conductive photocurable resin layer>
(Preparation of silver nanowire dispersion (1))
A silver nitrate solution in which 0.51 g of silver nitrate powder was dissolved in 50 mL of pure water was prepared. Thereafter, 1N ammonia water was added to the silver nitrate solution until it became transparent, and pure water was added so that the total amount became 100 mL, whereby an additive solution A was prepared.
In addition, 0.5 g of glucose powder was dissolved in 140 mL of pure water to prepare additive solution G.
Further, 0.5 g of HTAB (hexadecyl-trimethylammonium bromide) powder was dissolved in 27.5 mL of pure water to prepare additive solution H.

Next, 20.6 mL of the additive solution A was placed in a three-necked flask and stirred at room temperature. Silver nanowire aqueous dispersion by adding 41 mL of pure water, 20.6 mL of additive solution H, and 16.5 mL of additive solution G to this solution with a funnel and heating at 90 ° C. for 5 hours with stirring at 200 rpm. (1) was obtained.
After cooling the obtained silver nanowire aqueous dispersion (1), polyvinyl pyrrolidone (trade name: K-30, manufactured by Wako Pure Chemical Industries, Ltd.) is adjusted to 0.05 with respect to the mass of silver 1. Add with stirring, then centrifuge, purify until conductivity is below 50 μS / cm, further centrifuge with propylene glycol monomethyl ether to remove water, and finally add propylene glycol monomethyl ether. A silver nanowire solvent dispersion (1) was prepared.

(Preparation of coating liquid C1 for forming conductive photocurable resin layer)
The following composition was stirred and mixed with the silver nanowire dispersion (1) so that the final silver concentration was 1.0% by mass to prepare a coating solution for forming a conductive photocurable resin layer.
The viscosity at 100 ° C. after the solvent removal of the coating solution C1 for forming the conductive photocurable resin layer was 4500 Pa · sec.

-Composition of coating liquid C1 for forming conductive photocurable resin layer-
-Binder 3 (solid content: 45%): 3.80 parts by mass-KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.): 1.59 parts by mass-2- (dimethylamino) -2-[(4-methyl Phenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone (trade name: Irgacure 379, manufactured by BASF): 0.159 parts by mass EHPE-3150 (manufactured by Daicel Chemical Industries): 0 150 parts by mass / surfactant (trade name: MegaFuck F-781F, manufactured by Dainippon Ink)
: 0.002 parts by mass / MMPGAc (manufactured by Daicel Chemical Industries): 19.3 parts by mass

<< Formation of transparent electrode pattern and insulating layer >>
In the same manner as in Example 1, after obtaining the front plate on which the mask layer was formed, the first transparent electrode pattern was formed using the photosensitive film C1 on which the conductive photocurable resin layer was laminated. .
First, the front plate on which the mask layer was formed was washed, and the photosensitive film C1 from which the cover film was removed was laminated (base material temperature: 120 ° C., rubber roller temperature 120 ° C., linear pressure 100 N / cm, conveyance speed 1. 7 m / min). After peeling off the temporary support, the distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the conductive photocurable resin layer is set to 100 μm, and the exposure dose is 100 mJ / cm ² (i line). Pattern exposure.
Next, a triethanolamine developer (containing 30% by mass of triethanolamine, a product name: T-PD2 (manufactured by FUJIFILM Corporation) diluted 10 times with pure water) at 30 ° C. for 60 seconds, Sodium carbonate / sodium hydrogencarbonate developer (trade name: T-CD1 (Fuji Film Co., Ltd.) diluted 5 times with pure water) at 25 ° C. for 60 seconds, surfactant-containing cleaning solution (trade name) : T-SD3 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water for 20 seconds at 33 ° C, and the residue is removed with a rotating brush and ultra-high pressure washing nozzle. A 60-minute post-baking treatment was performed to obtain a front plate on which a mask layer and a first transparent electrode pattern were formed.

Subsequently, an insulating layer was formed in the same manner as in Example 1. Subsequently, the 2nd transparent electrode pattern was formed using the photosensitive film C1 which laminated | stacked the electroconductive photocurable resin layer. Further, in the same manner as in Example 1, a conductive element different from the first and second transparent electrode patterns and a transparent protective layer were formed, and the front plate 2 was obtained.
Further, an image display device 2 was produced in the same manner as in Example 1.

<< Evaluation of Front Plate 2 and Image Display Device 2 >>
In each of the above-described steps, the mask plate, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 2 on which the conductive elements different from the first and second transparent electrode patterns are formed are In addition, the opening and the back surface were free from contamination, easy to clean, and there was no problem of contamination of other members.
Also, the mask layer had no pinholes and was excellent in light shielding properties.
The first transparent electrode pattern, the second transparent electrode pattern, and the conductive elements different from the first transparent electrode pattern have no problem with the respective conductivity, while the first transparent electrode pattern and the second transparent electrode pattern It had insulation between the transparent electrode patterns.
Furthermore, the transparent protective layer was free from defects such as bubbles and an image display device having excellent display characteristics was obtained.

[Comparative Example 1]
The tempered glass (300 mm × 400 mm × 0.7 mm) in which the opening (15 mmΦ) was formed was cleaned with a UV cleaning device, then brush-cleaned with a cleaning agent, and further ultrasonically cleaned with ultrapure water. The substrate was heat-treated at 120 ° C. for 3 minutes to stabilize the surface state. The substrate was cooled and temperature-controlled at 23 ° C., and obtained in Example 1 with a glass substrate coater (manufactured by FS Japan, trade name: MH-1600) having a slit-like nozzle. The coating liquid K1 for black photocurable resin layer was apply | coated. Subsequently, after part of the solvent was dried by VCD (vacuum dryer, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 30 seconds to eliminate the fluidity of the coating layer, the periphery of the substrate was measured by EBR (edge bead remover). The unnecessary coating solution was removed and prebaked at 120 ° C. for 3 minutes to obtain a black photocurable resin layer K1 having a film thickness of 2.33 μm and an optical density of 4.0 on the tempered glass (liquid resist method). .
With a proximity type exposure machine (manufactured by Hitachi High-Tech Electronics Engineering Co., Ltd.) having an ultra-high pressure mercury lamp, with the substrate and the exposure mask (quartz exposure mask having a frame pattern) standing vertically, the exposure mask surface The distance between the black photocurable resin layers K1 was set to 200 μm, and pattern exposure was performed at an exposure amount of 300 mJ / cm ² from the black photocurable resin layer K1 side in a nitrogen atmosphere.

Next, pure water is sprayed with a shower nozzle to uniformly wet the surface of the black photocurable resin layer K1, and then a KOH developer (containing KOH, nonionic surfactant, product name: CDK-). 1. Developed by 100-fold dilution of FUJIFILM Electronics Materials Co., Ltd.) Shower-developed at 23 ° C for 80 seconds with a flat nozzle pressure of 0.04 MPa, and further with an ultra-high pressure cleaning nozzle at a pressure of 9.8 MPa Residue removal is performed by spraying ultrapure water, followed by post-exposure at an exposure amount of 1300 mJ / cm ^{2 in the} atmosphere, and further post-baking treatment at 240 ° C. for 80 minutes to obtain an optical density of 4.0, film A front plate on which a 2.0 μm thick mask layer was formed was obtained.

Next, ITO sputtering was performed in the same manner as in Example 1, and the photocurable resin layer coating solution E1 for etching was applied in the same manner as in the formation of the black photocurable resin layer K1 in Comparative Example 1 ( (Liquid resist method), obtaining a front plate on which a photocurable resin layer for etching is formed, and the distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the photocurable resin layer for etching is 200 μm Then, pattern exposure was performed at an exposure amount of 260 mJ / cm ² from the etching photocurable resin layer side in a nitrogen atmosphere.
Next, a triethanolamine developer (containing 30% by mass of triethanolamine, trade name: T-PD2 (manufactured by FUJIFILM Corporation) diluted 10-fold with pure water) is treated at 23 ° C. for 70 seconds. Then, the residue was removed with an ultra-high pressure washing nozzle, and a post-bake treatment at 130 ° C. for 30 minutes was further performed to obtain a front plate on which a transparent electrode layer and a photocurable resin layer pattern for etching were formed. In the same manner as in Example 1, etching and resist peeling were performed to obtain a front plate on which a mask layer and a first transparent electrode pattern were formed.

Further, in the same manner as in the formation of the black photocurable resin layer K1 of Comparative Example 1, the insulating layer forming coating liquid W1 was applied (liquid resist method), and the insulating layer photocurable resin layer was formed. Obtaining a face plate, setting the distance between the exposure mask (quartz exposure mask having the insulating layer pattern) surface and the photocurable resin layer for etching to 200 μm, and etching photocurable resin in a nitrogen atmosphere and pattern exposure from the layer side at an exposure amount 200 mJ / cm ^2.
Next, it is processed at 23 ° C. for 60 seconds using a sodium carbonate / sodium hydrogencarbonate developer (trade name: T-CD1 (manufactured by Fuji Film Co., Ltd.) diluted 5 times with pure water). Residue removal was performed with a high-pressure washing nozzle, and post-baking treatment was performed at 230 ° C. for 60 minutes to obtain a front plate on which a mask layer, a first transparent electrode pattern, and an insulating layer pattern were formed.

Further, in the same manner as in the formation of the first transparent electrode pattern of Comparative Example 1, a front plate on which a mask layer, a first transparent electrode pattern, an insulating layer pattern, and a second transparent electrode pattern were formed was obtained.
Next, in the same manner as in Example 1, after forming an aluminum thin film, a photocurable resin layer coating solution E1 for etching was applied (liquid resist method), a mask layer, a first transparent electrode pattern, and insulation. A front plate on which a conductive element different from the layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns is formed is manufactured. Further, in the same manner as the formation of the insulating layer, the liquid resist method is used. Forming a transparent protective layer so as to cover all of the conductive elements different from the mask layer, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns A front plate 3 having a transparent protective layer laminated thereon was obtained, and an image display device 3 was produced in the same manner as in Example 1.

<< Evaluation of Front Plate 3 and Image Display Device 3 >>
In each of the above steps, the mask plate, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 3 on which a conductive element different from the first and second transparent electrode patterns is formed The back surface was dirty and could not be easily cleaned.
On the other hand, there was no pinhole in the mask layer, and the light shielding property was excellent.
And there is no problem in each electroconductivity of a 1st transparent electrode pattern, a 2nd transparent electrode pattern, and another electroconductive element, and the 1st transparent electrode pattern and the 2nd transparent electrode pattern It had insulation between.
Furthermore, although the transparent protective layer was free from defects such as bubbles, the image display device 3 had display unevenness that was thought to be caused by the contamination of the front plate 3, and excellent display characteristics could not be obtained.

[Comparative Example 2]
In Example 1, the front plate 4 and the image display were formed in the same manner as in Example 1 except that the photosensitive layer K2 shown below was used instead of using the photosensitive film K1 for forming the mask layer. Device 4 was made.

<< Production of photosensitive film K2 >>
A coating liquid for black photocurable resin layer comprising the above-mentioned formulation K1 directly on a 75 μm thick polyethylene terephthalate film temporary support, without forming a thermoplastic resin layer or an intermediate layer using a slit nozzle. Was applied and dried. A black photo-curable resin layer having a dry film thickness of 2.2 μm is provided on the temporary support so that the optical density is 4.0, and a protective film (thickness 12 μm polypropylene film) is pressure-bonded, It was set as photosensitive film K2.

<< Evaluation of Front Plate 4 and Image Display Device 4 >>
In each of the above-described steps, the mask plate, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 2 on which the conductive elements different from the first and second transparent electrode patterns are formed are In addition, the opening and the back surface were free from contamination, easy to clean, and there was no problem of contamination of other members.
In addition, there is no problem in the conductivity of each of the first transparent electrode pattern, the second transparent electrode pattern, and another conductive element, while the first transparent electrode pattern and the second transparent electrode pattern It had insulation between the transparent electrode patterns.
The transparent protective layer had no defects such as bubbles.
However, pinholes are generated in the mask layer, the light shielding property is insufficient, and the image display device 4 has a light leakage, so that excellent display characteristics cannot be obtained.

[Comparative Example 3]
In Example 1, the formation of the first transparent electrode pattern was performed in the same manner as in Example 1 except that the photosensitive film E2 shown below was used instead of using the photosensitive film E1 for etching. An image display device 5 was produced.

<< Production of photosensitive film E2 >>
On the temporary support of polyethylene terephthalate film having a thickness of 75 μm, a slit-shaped nozzle is used to directly apply the photocurable resin layer for etching comprising the above-mentioned formulation W1 without forming a thermoplastic resin layer and an intermediate layer. After the liquid was applied and dried, a protective film (polypropylene film having a thickness of 12 μm) was pressure-bonded to form a photosensitive film E2 (the photocurable resin layer for etching had a thickness of 2.0 μm).

<< Evaluation of Front Plate 5 and Image Display Device 5 >>
In each of the above-described steps, the mask plate, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 2 on which the conductive elements different from the first and second transparent electrode patterns are formed are In addition, the opening and the back surface were free from contamination, easy to clean, and there was no problem of contamination of other members.
Further, the mask layer had no pinholes and was excellent in light shielding properties, and the transparent protective layer had no defects such as bubbles.
In addition, there is no problem with the conductivity of the second transparent electrode pattern and the conductive elements different from the first and second, and there is an insulating property between the first transparent electrode pattern and the second transparent electrode pattern. Had. However, the first transparent electrode pattern had high resistance and was not sufficiently conductive.
Although the image display device 5 has no problem in display characteristics, there is a problem in terms of power consumption.

[Comparative Example 4]
In Example 1, instead of using the insulating film-forming photosensitive film W1, the transparent protective layer was formed in the same manner as in Example 1 except that the photosensitive film W2 shown below was used. A display device 6 was produced.

<< Preparation of photosensitive film W2 >>
On the temporary support of polyethylene terephthalate film having a thickness of 75 μm, without applying a thermoplastic resin layer and an intermediate layer using a slit nozzle, coating for the photocurable resin layer for etching consisting of the above-mentioned formulation W2 directly. After the liquid was applied and dried, a protective film (polypropylene film having a thickness of 12 μm) was pressure-bonded to obtain a photosensitive film W4 (the film thickness of the photocurable resin layer for the insulating layer was 1.4 μm).

<< Evaluation of Front Plate 6 and Image Display Device 6 >>
In each of the above-described steps, the mask layer, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the front plate 1 on which a conductive element different from the first and second transparent electrode patterns is formed is In addition, the opening and the back surface were free from contamination, easy to clean, and there was no problem of contamination of other members.
Also, the mask layer had no pinholes and was excellent in light shielding properties.
The first transparent electrode pattern, the second transparent electrode pattern, and the conductive elements different from the first transparent electrode pattern have no problem with the respective conductivity, while the first transparent electrode pattern and the second transparent electrode pattern It had insulation between the transparent electrode patterns.
However, bubbles were generated in the transparent protective layer, and the image display device 6 caused image unevenness, and excellent display characteristics could not be obtained.

As described above, according to the method for manufacturing a capacitance-type input device of the present invention, it is possible to manufacture a capacitance-type input device having a merit of thin layer / light weight with high quality in a simple process. I was able to. For this reason, it turns out that the electrostatic capacitance type input device manufactured with the manufacturing method of this invention, and an image display apparatus using the same are high quality.

DESCRIPTION OF SYMBOLS 1 Front plate 2 Mask layer 3 1st transparent electrode pattern

3a Pad part

3b Connection part 4 2nd transparent electrode pattern 5 Insulating layer 6 Conductive element 7 Transparent protective layer 8 Opening part 10 Capacitive type input device 11 Strengthening process Glass 12 Another conductive element

Claims

A capacitive input device manufacturing method comprising a front plate and at least the following elements (1) to (5) on a non-contact side of the front plate, wherein at least one of the elements (1) to (5): One is a method of manufacturing a capacitive input device, which is formed using a photosensitive film having a temporary support, a thermoplastic resin layer, and a photocurable resin layer in this order.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern
2. The method of manufacturing a capacitive input device according to claim 1, further comprising a transparent protective layer disposed so as to cover all or part of the elements (1) to (5).
The method for manufacturing a capacitive input device according to claim 2, wherein the transparent protective layer is formed using the photosensitive film.
At least one of the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element is formed by etching a transparent conductive material using an etching pattern formed by the photosensitive film. The method of manufacturing a capacitive input device according to any one of claims 1 to 3.
The photocurable resin layer of the photosensitive film is a conductive photocurable resin layer, and at least one of the first transparent electrode pattern, the second transparent electrode pattern, and the conductive element. The method for manufacturing a capacitance-type input device according to any one of claims 1 to 3, wherein the photosensitive film is formed using the photosensitive film.
At least one of the first transparent electrode pattern and the second transparent electrode pattern is installed across both regions of the non-contact surface of the front plate and the surface of the mask layer opposite to the front plate. The method for manufacturing a capacitance-type input device according to any one of claims 1 to 5.
The method of manufacturing a capacitive input device according to any one of claims 1 to 6, wherein the conductive element is disposed at least on a surface side opposite to the front plate of the mask layer.
In the photosensitive film, the thermoplastic resin layer has a thickness of 3 to 30 μm, the viscosity of the thermoplastic resin layer measured at 100 ° C. is in the region of 1000 to 10,000 Pa · sec, and the photocurable resin layer The viscosity measured at 100 ° C. is in the range of 2000 to 50000 Pa · sec, and the viscosity of the thermoplastic resin layer is lower than the viscosity of the photocurable resin layer. The manufacturing method of the electrostatic capacitance type input device of description.
The electrostatic according to any one of claims 1 to 8, wherein a surface treatment is performed on a non-contact surface of the front plate, and the photosensitive film is disposed on the non-contact surface of the front plate subjected to the surface treatment. A method for manufacturing a capacitive input device.
The method for manufacturing a capacitive input device according to claim 9, wherein a silane compound is used for the surface treatment of the front plate.
The method for manufacturing a capacitive input device according to any one of claims 1 to 10, wherein the front plate has an opening at least in part.
A capacitance-type input device manufactured by the method for manufacturing a capacitance-type input device according to any one of claims 1 to 11.
12. An image display device comprising, as a constituent element, a capacitance-type input device manufactured by the method for manufacturing a capacitance-type input device according to any one of claims 1 to 11.