WO2013045371A1 - Verfahren zur herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden halbleiterbauteils und halbleiterbauteil - Google Patents
Verfahren zur herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden halbleiterbauteils und halbleiterbauteil Download PDFInfo
- Publication number
- WO2013045371A1 WO2013045371A1 PCT/EP2012/068683 EP2012068683W WO2013045371A1 WO 2013045371 A1 WO2013045371 A1 WO 2013045371A1 EP 2012068683 W EP2012068683 W EP 2012068683W WO 2013045371 A1 WO2013045371 A1 WO 2013045371A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lens material
- mounting
- barrier frame
- mounting surface
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present disclosure relates to a method for
- a radiation-emitting semiconductor device which comprises an injection-molded plastic molded part on a
- Carrier substrate by means of which a semiconductor chip is at least partially transformed.
- semiconductor device Radiation emitting and / or receiving semiconductor device (hereinafter referred to as “semiconductor device”) specified.
- the method comprises the following steps:
- Mounting surface laterally encloses
- Lens material in particular adapted to each other so that the mounting surface within the mounting area of the
- Barrier frame of the lens material is not wettable, so that the lens material when applied to the
- the carrier body is, for example, a planar substrate.
- the carrier body has, for example, at least one metal, at least on the mounting surface Ceramic material, a polymer material or a composite of at least two of these materials.
- the carrier body is a printed circuit board.
- it has conductor tracks on the mounting surface and / or on a surface opposite the mounting surface.
- the printed circuit board has vias (so-called "vias"), which extend from the mounting surface to an outer surface of the printed circuit board opposite the mounting surface for producing an electrically conductive connection.
- the barrier frame is preferably designed such that it limits the mounting area laterally.
- the mounting area is in particular the area of the area laterally enclosed by the barrier frame
- the barrier frame and the carrier body in particular have a common boundary line, which coincides, for example, with the outer contour of the mounting area.
- a common boundary line which coincides, for example, with the outer contour of the mounting area.
- the mounting area formed.
- the mounting area is in
- the mounting of the semiconductor chip expediently comprises a mechanical fixing of the semiconductor chip on the semiconductor chip
- the mounting area includes at least a first electrical connection area, the
- Semiconductor chip is arranged in the mounting region such that it overlaps at least in places with the first electrical connection pad and it is mechanically stable and electrically conductive with the first electrical
- the semiconductor chip is preferably aligned such that it laterally from the barrier frame
- wrapping material in the present context, a wrapping material is referred to, for those of the
- the lens material is a transparent plastic material, in particular a
- the lens material is curable. That is, it is, for example, by means of heating and / or by irradiation with light - in particular with ultraviolet light - from the liquid state to a solid state
- reaction-hardening silicone resin is used as the lens material.
- Reaction-curing silicone resins are generally known to the person skilled in the art and are therefore not explained in detail at this point.
- the lens material is in
- the semiconductor chip may, for example, be a light-emitting diode chip or a laser diode chip which emits in particular infrared, visible and / or ultraviolet light. Also provided for receiving radiation photodiode or solar cell may be used as a semiconductor chip.
- the semiconductor chip is based on an inorganic semiconductor material.
- an organic light-emitting and / or -empracracides element such as an OLED ("Organic Light Emitting Device", organic
- the contact angle is smaller than 90 °.
- barrier frame is not wettable by the lens material is understood in the present context in particular that the contact angle between the
- Lens material and a surface of the barrier frame is greater than 90 °.
- Contact angle is sometimes referred to as “contact angle” or “wetting angle”.
- the lens material after the lens material after the lens material
- the barrier frame preferably retains the lens material on the outer contour of the mounting area. At the same time it is forming - especially also because of the involved
- the lens material advantageously for beam shaping of the light emitted from the semiconductor chip and / or to be received.
- the method according to the present disclosure may
- the barrier frame can advantageously be made very low in the method or component.
- the cavity formed by the barrier frame and the carrier body has such a small volume that, in the case of one of the
- Lens material wettable material would be inappropriate to retain the volume of lens material deposited within the mounting area.
- the drop formed by the lens material is
- the barrier frame for example, at least twice as high, preferably at least five times as high, and in particular at least 10 times as high as the barrier frame.
- the height is the dimension along the surface normal to the mounting surface.
- the thickness of the barrier frame is selected such that the semiconductor chip mounted on the mounting surface projects beyond the barrier frame, in particular in the direction away from the carrier body.
- a fluorocarbon polymer material is applied to the mounting surface of the carrier body to form the barrier frame.
- a polymer material is understood in particular to mean a material which comprises or consists of polymers.
- a fluorocarbon polymer material contains a perfluorinated hydrocarbon compound.
- a fluorocarbon polymer material is especially one
- Polymeric material containing a perfluorinated hydrocarbon compound containing a perfluorinated hydrocarbon compound.
- the fluorocarbon polymer material is hydrophobic. Contains the perfluorinated hydrocarbon compound
- the fluorocarbon polymer material may be a thermoplastic or an elastomer.
- a thermoplastic or an elastomer.
- it is in the
- Perfluoroalkoxy polymer (PFA) - that is in particular a thermoplastic copolymer of tetrafluoroethylene with one or more perfluorinated vinyl ethers -
- PCTFE Polychlorotrifluoroethylene
- Formula (CF2-CFCl-) n with a natural number n - to one A copolymer of one or more methacrylates and one or more perfluoroalkyl acrylates, a perfluorinated silicone, or a perfluoroethylene propylene copolymer (FEB).
- the application of the lens material can be done for example by means of an ink jet printing process.
- the lens material can be sprayed or sprayed
- the curing of the lens material takes place for example by heating in an oven and / or by exposure to UV radiation, for example with a UV flash.
- the mounting area has a first electrical connection area and a second electrical connection area.
- Pad is electrically separated from the first electrical pad and arranged laterally adjacent to the first electrical pad.
- the first pad and the second pad are disposed entirely within the barrier frame.
- one through-connection leads from the first connection surface or the second one
- connection surface to the mounting surface of the opposite outer surface of the carrier body.
- the semiconductor chip is at least on the first electrical
- the semiconductor chip is mounted in such a way on the first electrical connection surface, the second electrical connection area is arranged laterally of the semiconductor body.
- the semiconductor chip overlaps in a plan view of the mounting surface
- a bonding wire is pulled from the semiconductor body to the second electrical connection pad.
- an electrically conductive wire is pulled from the semiconductor body to the second electrical connection pad.
- the lens material is applied to the mounting area in such a way that it is the
- Bonding wire surrounds at least in places and covers the two electrical pads.
- the bonding wire is formed in the lens material
- Bonding wire when applying the lens material is particularly low.
- a plurality of semiconductor components is produced.
- a carrier is provided on which a plurality of barrier frames are formed.
- the carrier is for
- Barrier frames are designed in particular such that after separating each carrier body is provided with a barrier frame.
- the formation of the barrier frame is carried out in particular such that they are connected and form a grid.
- a mounting region is arranged in the grid cells of this grid, in each of which a radiation-emitting and / or receiving semiconductor chip is mounted and cast with the lens material.
- the grid is a rectangular grid.
- Semiconductor components arise, each having a carrier body and a barrier frame.
- the cutting is done for example by means of sawing or laser cutting.
- the sawing is done in particular
- FIG. 1 shows a first stage of a method for producing a plurality of radiation-emitting semiconductor components according to a first
- FIGS. 1 to 4 show a method for producing a plurality of radiation-emitting semiconductor components according to a first exemplary embodiment.
- a carrier 1 is provided, which is intended to be separated into a plurality of carrier bodies 10.
- the carrier bodies 10 represent printed circuit boards.
- Each of the carrier bodies 10 provided on the carrier 1 has an assembly area 110.
- Each of the mounting areas 110 includes a first electrical pad 2 and a second electrical pad 3.
- Figure 1A is a schematic plan view of a
- Section of the carrier 1 shown comprising six carrier body 10.
- the carrier bodies 10 are presently arranged in rows and columns.
- the reference numerals are entered to simplify the illustration only in one of the two illustrated rows of support bodies 10. In the first stage of the illustrated in FIG.
- Pads 2 a radiation-emitting and / or - receiving semiconductor chip 4, in particular a
- LED chip or a laser diode chip mounted.
- For mounting becomes a mechanically stable and in particular
- a further electrically conductive connection is produced between the respective semiconductor chip 4, in particular its top side facing away from the mounting surface 101, and the respective second electrical connection surface 3.
- Pad 2 and the second pad 3 are completely surrounded by the barrier frame. In other words, there is no plan view of the carrier body 10
- a semiconductor chip 4 which has both electrical connections on its underside and is mounted on the first and second electrical connection surface 2, 3, that one of the electrical connections in plan view of the mounting surface 101 with the first
- Figure 2 shows a subsequent stage of the method according to the first embodiment. At this stage of the
- Each carrier body 10 contains one
- Barrier frame 6 which the mounting portion 110 laterally completely encloses and leaves open in plan view of the mounting surface 101.
- the barrier frames 6 consist for example of one of the fluorocarbon polymer materials mentioned in the general part, for example PTFE. They are applied in particular by means of an ink-jet printing process on the support 1 and subsequently dried.
- the individual components 100 associated with the barrier frame 6 are integrally formed on the support 1 and form a rectangular grid. Each cell of this grid represents after completion a component 100 and contains exactly one carrier body 10 with exactly one mounting area 110 and exactly one barrier frame 6.
- the grid cells are shown in FIGS. 1 to 4
- Process stage is a transparent or with
- Phosphor particles provided lens material 7 applied to the individual mounting portions 110.
- the liquid lens material is dropped, for example, from a nozzle on the respective mounting area. The material and the surface condition of the
- Pads 2, 3 - and the lens material 7 are adapted to each other so that the mounting surface 110 - and in particular the electrical connection surfaces 2, 3 - are wetted by the lens material.
- the lens material 7 is distributed during application and / or after application on the entire mounting surface 110.
- the material of the barrier frame 6 and the lens material are adapted to each other so that the
- Barrier frame 6 of the lens material 7 are not wettable. In this way, the lens material 7 does not extend beyond the mounting area 110. The barrier frame 6 remain so in plan view of the mounting surface 101 of the
- Barrier frame 6 and lens material 10 the lens material to a droplet with a convex outer surface.
- the base of the drop is determined by the inner contour of the
- the droplet formed by the lens material 7 therefore has the same base area as the mounting area 110.
- the distribution of the lens material 7 is over the entire length
- FIG. 4 shows a schematic cross section along the plane AA (see FIG. 3) in a subsequent stage of the method according to the first exemplary embodiment.
- the lens material 7 has already flowed up to the edges of the mounting regions 110, so that the lens material 7, the mounting surface 101 of FIG
- Carrier body 10 and the barrier frame 6 have a common, closed boundary line.
- a droplet with a convex outer surface 701 has formed.
- the droplets formed by the lens material 7 - the lens of the component 100 - project beyond the barrier frame 6 in the direction away from the carrier body 10.
- the volume of the lens material 7 applied to a mounting region 110 is for example at least twice as large, in particular at least five times as large as the volume of the lens material
- the lens 7 has away in the direction of the carrier body 10, in particular in
- the lens material 7 covers in this way the
- the contiguous barrier frame 6 separated into individual components 100 Since the barrier frame 6 are not covered by the lens material 7, this needs when separating the components 100 advantageously not be severed. In this way, the separation into individual components can be particularly cost-effective and fast.
- the thickness hg of the barrier frame 6 is in particular also smaller than the height ti Q , by which the semiconductor chip 4 protrudes beyond the mounting surface 101 of the carrier body 10.
- FIG. 5 shows a schematic plan view of a method for producing a plurality of radiation-emitting and / or receiving semiconductor components 100 according to a second exemplary embodiment.
- the process stage illustrated in Figure 5 corresponds to the method ⁇ stadium of Figure 2 the method according to the first
- the second exemplary embodiment of the method differs from the first exemplary embodiment in that the barrier frames 6 each enclose a circular mounting region 110-instead of a rectangular or square mounting region 110 as in the first exemplary embodiment. In this way, components 100 are achieved in which the lens material 7 is not a drop with a
- the lens shape by means of the shape of the barrier frame in a simple manner adjustable.
- Released assembly areas 110 is, for example, by means of a photolithographic process step in the
- the invention is not limited by the description based on the embodiments of these but includes any combination of elements and process steps of the various embodiments and embodiments.
Landscapes
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/347,594 US9343596B2 (en) | 2011-09-27 | 2012-09-21 | Method for producing at least one radiation-emitting and/or -receiving semiconductor component, and semiconductor component |
| DE112012004016.3T DE112012004016A5 (de) | 2011-09-27 | 2012-09-21 | Verfahren zur Herstellung mindestens eines strahlungsemittierenden und /oder -empfangenden Halbleiterbauteils und Halbleiterbauteil |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011115150.1 | 2011-09-27 | ||
| DE102011115150A DE102011115150A1 (de) | 2011-09-27 | 2011-09-27 | Verfahren zur Herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden Halbleiterbauteils und Halbleiterbauteil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2013045371A1 true WO2013045371A1 (de) | 2013-04-04 |
Family
ID=47046544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2012/068683 Ceased WO2013045371A1 (de) | 2011-09-27 | 2012-09-21 | Verfahren zur herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden halbleiterbauteils und halbleiterbauteil |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9343596B2 (de) |
| DE (2) | DE102011115150A1 (de) |
| WO (1) | WO2013045371A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013215326A1 (de) * | 2013-04-30 | 2014-10-30 | Tridonic Jennersdorf Gmbh | LED-Modul mit hochreflektierender Fläche |
| KR102080778B1 (ko) * | 2013-09-11 | 2020-04-14 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
| DE102016012644A1 (de) * | 2016-10-24 | 2018-04-26 | Azur Space Solar Power Gmbh | Nutzen von Solarzelleneinheiten und Herstellungsverfahren |
| JP6983041B2 (ja) * | 2017-11-16 | 2021-12-17 | スタンレー電気株式会社 | 半導体受光装置及びその製造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070096129A1 (en) * | 2005-10-27 | 2007-05-03 | Lg Innotek Co., Ltd | Light emitting diode package and method of manufacturing the same |
| US20070131957A1 (en) | 2003-12-30 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof |
| US20080007939A1 (en) * | 2006-07-10 | 2008-01-10 | Samsung Electro-Mechanics Co., Ltd. | Direct-type backlight unit having surface light source |
| EP1901348A2 (de) * | 2006-09-13 | 2008-03-19 | Shin-Etsu Chemical Co., Ltd. | Verfahren zur Versiegelung eines Mikrobauteils |
| US20080122123A1 (en) * | 2006-11-27 | 2008-05-29 | Siew It Pang | Compact LED with a self-formed encapsulating dome |
| CN201766097U (zh) * | 2010-07-30 | 2011-03-16 | 晶科电子(广州)有限公司 | 一种led封装结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE541319T1 (de) * | 2004-11-23 | 2012-01-15 | Ct Ricerche Plast Optica S P A | Leuchtdiode und deren herstellung |
| US7365371B2 (en) * | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
| TWI360238B (en) * | 2007-10-29 | 2012-03-11 | Epistar Corp | Photoelectric device |
| DE102009031008A1 (de) * | 2009-06-29 | 2010-12-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
| KR100986336B1 (ko) * | 2009-10-22 | 2010-10-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 발광소자 패키지 |
-
2011
- 2011-09-27 DE DE102011115150A patent/DE102011115150A1/de not_active Withdrawn
-
2012
- 2012-09-21 DE DE112012004016.3T patent/DE112012004016A5/de not_active Withdrawn
- 2012-09-21 US US14/347,594 patent/US9343596B2/en not_active Expired - Fee Related
- 2012-09-21 WO PCT/EP2012/068683 patent/WO2013045371A1/de not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070131957A1 (en) | 2003-12-30 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof |
| US20070096129A1 (en) * | 2005-10-27 | 2007-05-03 | Lg Innotek Co., Ltd | Light emitting diode package and method of manufacturing the same |
| US20080007939A1 (en) * | 2006-07-10 | 2008-01-10 | Samsung Electro-Mechanics Co., Ltd. | Direct-type backlight unit having surface light source |
| EP1901348A2 (de) * | 2006-09-13 | 2008-03-19 | Shin-Etsu Chemical Co., Ltd. | Verfahren zur Versiegelung eines Mikrobauteils |
| US20080122123A1 (en) * | 2006-11-27 | 2008-05-29 | Siew It Pang | Compact LED with a self-formed encapsulating dome |
| CN201766097U (zh) * | 2010-07-30 | 2011-03-16 | 晶科电子(广州)有限公司 | 一种led封装结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112012004016A5 (de) | 2014-07-17 |
| US9343596B2 (en) | 2016-05-17 |
| US20140231856A1 (en) | 2014-08-21 |
| DE102011115150A1 (de) | 2013-03-28 |
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