WO2013035983A1 - Appareil et procédé destinés à une implantation ionique au plasma - Google Patents

Appareil et procédé destinés à une implantation ionique au plasma Download PDF

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WO2013035983A1
WO2013035983A1 PCT/KR2012/006211 KR2012006211W WO2013035983A1 WO 2013035983 A1 WO2013035983 A1 WO 2013035983A1 KR 2012006211 W KR2012006211 W KR 2012006211W WO 2013035983 A1 WO2013035983 A1 WO 2013035983A1
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power
ion implantation
pulse
vacuum chamber
pulsed
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PCT/KR2012/006211
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English (en)
Korean (ko)
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한승희
전준홍
박원웅
최진영
문선우
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한국과학기술연구원
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Publication of WO2013035983A1 publication Critical patent/WO2013035983A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

Definitions

  • the present invention relates to a plasma ion implantation apparatus and method for enabling plasma ion implantation of elements present in a solid state at room temperature.
  • Ion implantation is a technique in which ions are accelerated to tens to hundreds of keV and incident on the surface of a material.
  • Ion implantation technology can form a modified layer up to several thousand micrometers below the surface of the material, and forms a gentle composition change layer, so that the coating layer peeling phenomenon due to heterogeneity of the material as in the coating is not fundamentally generated.
  • Another advantage of ion implantation technology is that it is a high-energy process, so it is hardly restricted by thermodynamics, and because it is a room temperature process, there is no change in size or deterioration due to heat, and surface roughness is also not significantly affected. Can be.
  • it is easy to control the type, thickness and degree of modification of the modified layer by adjusting the type, energy, and amount of implanted ions.
  • the conventional ion implantation apparatus is a device developed for doping an impurity onto a semiconductor wafer, which is a planar sample, extracts ions from an ion source, accelerates them, and enters the sample in the form of an ion beam. You should shake the ion beam.
  • This method of implanting ions in the form of ion beam has three-dimensional rotation and inclination of the sample for implanting ions into three-dimensional objects such as molds, tools, and mechanical component parts due to the principle of line-of-sight implantation.
  • There are technical disadvantages such as the need for masking to prevent sputtering caused by incident ions. It is also a factor that makes the practical application of ion implantation technology difficult, with very expensive equipment costs compared to other surface modification equipment.
  • Plasma ion implantation technology is a technology that can achieve surface modification by injecting ions uniformly on the surface of a large-area three-dimensional sample. That is, since plasma and high voltage pulses are used, uniform ion implantation rate to a large area sample is very fast, and an ion beam dispersing device or the like is not necessary.
  • the use of plasma eliminates the inherent charge concentration on the sample surface, and the simple device provides excellent clustering with other thin film processing equipment and a very low cost. There is this.
  • a plasma ion implantation apparatus and method capable of efficiently ionizing ions of an element present in a solid state at room temperature to a surface of a sample at a low process pressure.
  • Plasma ion implantation apparatus is a vacuum chamber that maintains a vacuum state inside, the magnetron deposition source coupled to the vacuum chamber to generate a pulsed plasma inside the vacuum chamber, the position opposite the magnetron deposition source in the vacuum chamber
  • a conductive sample mount installed on the sample to mount the sample, and an RF-DC coupling unit for supplying the RF-DC combined power of the RF power and the pulsed DC power to the magnetron deposition source by combining the input pulse DC power and RF power do.
  • RF-DC combined power superimposed RF power and pulsed DC power can have a density value of 10W / cm 2 ⁇ 10kW / cm 2 , and the power density of RF power is 0.1W / cm 2 ⁇ 2W / cm 2 . Can be.
  • a high voltage pulse power supply for accelerating the pulsed plasma generated from the magnetron deposition source to the sample side and supplying a high voltage pulse synchronized with the pulsed DC power input to the RF-DC coupling part to the sample mount, and is generated from the high voltage pulse power supply.
  • the operating frequency of the high voltage pulse is 1Hz to 10kHz, which is the same frequency as the RF-DC combined power superimposed with the RF power supplied to the magnetron deposition source and the pulsed DC power, and the pulse width is 1usec to 200usec, and the negative pulse high voltage Can be -1kv to -100kV.
  • a gas supply unit for supplying a gas to be converted into a plasma inside the vacuum chamber, disposed in the gas supply path between the gas supply unit and the vacuum chamber and controls the pressure of the gas supplied from the gas supply unit into the vacuum chamber to maintain the set pressure inside the vacuum chamber
  • the set pressure inside the vacuum chamber can be 0.1 mTorr to 2 mTorr.
  • An RF power supply unit for generating RF power and an RF matching unit coupled between the RF power supply unit and the RF-DC coupling unit for RF impedance matching, the pulse current meter for measuring plasma ion implantation current, plasma ion implantation voltage It may further include a monitoring unit for monitoring the plasma ion implantation current and the voltage connected to the pulse voltage meter, and the pulse current meter and the pulse voltage meter, respectively.
  • the plasma ion implantation method comprises the steps of placing the sample on the conductive sample mounting inside the vacuum chamber, maintaining the interior of the vacuum chamber in a vacuum state using a vacuum pump, supplying the gas to be plasmaized in the vacuum chamber and the internal pressure Maintaining the phase, supplying the RF-DC combined power of the RF power and the pulsed DC power superimposed on the magnetron deposition source to operate the magnetron deposition source, and applying a negative high voltage pulse to the conductive sample mount.
  • the pressure inside the vacuum chamber can be 0.1mTorr ⁇ 2mTorr, RF-DC combined power superimposed RF power and pulsed DC power has a density value of 10W / cm 2 ⁇ 10kW / cm 2 , and frequency is 1Hz ⁇ 10kHz
  • the pulse width can be 1usec to 200usec.
  • the power density of the RF power superimposed on the pulsed DC power can be 0.1W / cm 2 to 2W / cm 2 , and the operating frequency of the high voltage pulse is the RF-power superimposed with the RF power supplied to the magnetron deposition source. It is 1 Hz-10 kHz which is the same frequency as DC coupling power, pulse width is 1usec-200usec, and negative pulse high voltage can be -1kv --100kV.
  • Plasma ion implantation apparatus and method provides a low frequency plasma ion implantation by supplying RF-DC coupled power with RF superimposition to the magnetron sputtering deposition source and supplying a negative high voltage pulse synchronized to the sample mount. There is an effect that can be performed at process pressure.
  • the RF power 4 supplies a superimposed RF-DC combined power and is synchronized with the negative high voltage.
  • plasma ions can be effectively implanted into the surface of a sample under low process pressure, and the ions of elements present in the solid state at room temperature can be widely applied to enhance the surface properties through ion implantation of various elements. .
  • FIG. 1 is a block diagram showing a plasma ion implantation apparatus according to an embodiment of the present invention.
  • FIG. 2 is a graph illustrating a synchronization concept of the RF-DC coupled power superimposed with the RF power supplied to the magnetron deposition source and the time of the high voltage pulse supplied to the sample of the plasma ion implantation apparatus according to the embodiment of the present invention.
  • Figure 3a is a graph showing the discharge current according to the argon pressure of the magnetron deposition source operated using only a simple pulsed DC power according to an embodiment of the present invention.
  • Figure 3b is a graph showing the discharge current according to the argon pressure of the magnetron deposition source operated using the RF RF superimposed RF-DC combined power according to an embodiment of the present invention.
  • FIG. 4 is a graph illustrating OJ analysis results of measuring a distribution of aluminum elements in a depth direction of a silicon wafer sample in which aluminum plasma ions are implanted according to an exemplary embodiment of the present invention.
  • the plasma ion implantation apparatus includes a vacuum chamber 1, a magnetron deposition source 9, a conductive sample mounting unit 12, an RF-DC coupling unit 7, and a high voltage pulse power supply unit 13. .
  • the vacuum chamber 1 has an inner space for plasma ion implantation, and the inner space maintains a vacuum state.
  • the magnetron deposition source 9 is coupled to the upper side of the vacuum chamber 1 to generate ions of solid elements, and generates a pulsed plasma 10 by the magnetron deposition source 9.
  • the conductive sample holder 12 is a portion on which the sample 11 is mounted, and is installed at a position opposite to the magnetron deposition source 9 in the vacuum chamber 1.
  • the RF-DC coupling unit 7 combines the input pulse DC power 6 and the RF power 4 so that the RF power 4 and the pulse DC power 6 overlap the magnetron deposition source 9.
  • the pulsed DC power 6 is generated in the pulsed DC power supply 5.
  • the high voltage pulse power supply unit 13 accelerates the pulsed plasma 10 generated from the magnetron deposition source 9 to the sample 11 and the high voltage synchronized with the pulsed DC power 6 input to the RF-DC coupling unit 7. Pulse 14 is supplied to conductive sample mount 12. The high voltage pulse power supply unit 13 supplies the negative high voltage pulse 14 to the conductive sample holder 12.
  • the plasma ion implantation apparatus includes a gas control unit 15, a gas supply unit 16, a vacuum pump 21, a first vacuum valve 22, a second vacuum valve 23, and an RF power supply unit ( 2), the RF matching section 3, the pulse current meter 17, the pulse voltage meter 18, and the monitoring unit 19 further includes.
  • the gas control unit 15 is disposed in the gas supply path between the gas supply unit 16 and the vacuum chamber 1 to regulate the gas flow rate.
  • the gas regulating unit 15 functions to maintain the set pressure inside the vacuum chamber 1 by adjusting the pressure of the gas supplied from the gas supply unit 16 into the vacuum chamber 1.
  • the gas supply unit 16 supplies a gas to be plasmaized into the vacuum chamber 1.
  • the vacuum pump 21 functions to maintain the vacuum of the vacuum chamber (1).
  • the first vacuum valve 22 is installed in the gas discharge path between the gas control unit 15 and the vacuum chamber 1 to control the flow of the gas amount according to the opening and closing degree.
  • Reference numeral 20 means that the vacuum chamber 1 is electrically grounded.
  • the second vacuum valve 23 is installed in the gas supply path between the vacuum pump 21 and the vacuum tank 1.
  • the RF power supply unit 2 generates the RF power 4.
  • the RF matching unit 3 is coupled between the RF power supply unit 2 and the RF-DC coupling unit to perform RF impedance matching.
  • the pulse current meter 17 measures the plasma ion implantation current.
  • the pulse voltage meter 18 measures the plasma ion implantation voltage.
  • the monitoring unit 19 is connected to the pulse current meter 17 and the pulse voltage meter 18, respectively, to monitor plasma ion implantation current and voltage.
  • the plasma ion implantation apparatus supplies the RF-DC coupling power 8 with the RF superimposed on the magnetron deposition source 9, and the negative high voltage pulse (synchronized to the conductive sample mount 12) 14) enables plasma ion implantation of solid elements at low process pressures.
  • Plasma ion implantation of a solid element is achieved by synchronizing the pulse magnetron deposition source 9 and the high voltage pulse 14 using the RF-DC combined power 8 overlapping the RF power 4 and the pulsed DC power 6. Make it efficient.
  • the RF-DC combined power 8 in which the RF power 4 and the pulsed DC power 6 are superimposed is used.
  • the negative high voltage pulse 14 By supplying the negative high voltage pulse 14 synchronized with the sample 11 to the sample 11 so that plasma ions generated from the magnetron sputtering deposition source are not lost in energy due to collision with gas particles. Plasma ion implantation is allowed on the surface.
  • the RF-DC combined power (8) in which the RF power (4) and the pulsed DC power (6) are superimposed for the operation of the magnetron deposition source (9) the operation using only a simple pulse DC power (6) Operation at lower process pressures is possible. Therefore, it is possible to prevent the loss of ion implantation energy due to collision with other gas particles during plasma ion implantation. In addition, there is no discharge delay phenomenon of the pulsed plasma, which may accelerate the ignition time.
  • the pressure inside the vacuum chamber 1 is adjusted to a pressure of 0.1 mTorr to 2 mTorr. For this reason, even if the gas pressure inside the vacuum chamber 1 is lower than 0.1 mTorr, the plasma 10 may be used even when the RF power 4 and the pulsed DC power 6 overlapping the RF-DC combined power 8 are used. ), The energy loss of accelerated ions is very high at the high pressure of 2mTorr or higher due to the frequent collision of the accelerated ions and the surrounding gas particles at the plasma ion implantation. When using a process pressure of 2mTorr, considering that the average collision distance of the ions is only about 4cm, it can be obvious that the ion implantation is not performed smoothly at a pressure of 2mTorr or more.
  • the RF power 4 and the pulsed DC power 6 are superimposed on the magnetron deposition source 9 mounted on the vacuum chamber 1.
  • the magnetron deposition source 9 is operated by supplying the RF-DC coupling power 8, and the negative high voltage pulse 14 is applied to the conductive sample mount 12 using the high voltage pulse power supply 13.
  • Plasma ion implantation process is performed by supplying.
  • the high voltage pulses 14 are synchronized as shown in FIG. 2 to operate at the same frequency.
  • FIG. 2 is a graph illustrating a synchronization concept of the RF-DC coupled power superimposed with the RF power supplied to the magnetron deposition source and the time of the high voltage pulse supplied to the sample of the plasma ion implantation apparatus according to the embodiment of the present invention.
  • the solid element sputtered from the magnetron deposition source 9 is ionized by a high density plasma.
  • the ions of the solid element generated as described above are accelerated to the sample 11 by the negative high voltage pulse 14 supplied to the conductive sample mount 12, and thus ion implantation is performed on the surface of the sample 11 to be synchronized. Should be done.
  • the power density of the RF power (4) to be supplied to the magnetron evaporation source (9) has a value of 0.1W / cm 2 ⁇ 2W / cm 2 .
  • the frequency of the RF power 4 preferably has a frequency in the 1 to 30 MHz band which is most commonly used. The reason is that it is difficult to maintain the plasma by the RF power 4 when the RF power density uses a value of 0.1 W / cm 2 or less.
  • the RF power density of 2W / cm 2 or more is used because the sputtering of the target material by the RF power (4) occurs, a phenomenon that a thin film is deposited on the surface of the sample (11).
  • the pulse DC power density supplied to the magnetron deposition source 9 is set to have a value of 10 W / cm 2 to 10 kW / cm 2 .
  • the reason for this is that it is difficult to generate a high-density plasma with high ionization rate from the magnetron deposition source 9 with a low pulse DC power 6 of 10 W / cm 2 or less.
  • the pulsed DC power supply unit 5 or the RF-DC coupling unit 7 for combining the RF power 4 and the pulsed DC power supply 6. Because.
  • the operating frequency and pulse width of the pulsed DC power 6 used in the plasma ion implantation process are to have a frequency of 1 Hz to 10 kHz and a pulse width of 1usec to 200usec. This is because the plasma ion implantation process takes too much time at low frequencies below 1 Hz, thereby reducing the economic value of the present technology. In addition, it is because there is a lot of difficulty in manufacturing the pulsed DC power supply unit 5 that operates at a high frequency of 10kHz or more. When the pulse width is operated with a short pulse width of 1usec or less, the generation of high density plasma is not sufficient, so the ionization rate of the generated solid element is low. On the other hand, when a long pulse width of 200usec or more is used, the process is unstable because an arc is likely to occur in the magnetron deposition source 9 due to the high pulse power.
  • the operating frequency, pulse width, and negative (-) pulse high voltage of the high voltage pulse 14 supplied to the conductive sample mount 12 of the plasma ion implantation device are supplied to the magnetron deposition source 9 by the pulse DC power supply 6. It must be synchronized with the same frequency of 1Hz ⁇ 10kHz which is the same frequency as. Pulse widths of 1usec to 200 usec and negative pulse high voltages of -1kv to -100kV are used. For this reason, plasma ion implantation is not effective in the case of a pulse width of less than 1usec, and when plasma is operated by a long pulse of 200usec or more, a negative high voltage supplied to the conductive sample mount 12 causes plasma.
  • the sheath expands too much and the plasma is turned off while touching the wall of the vacuum chamber 1.
  • this is because an arc is more likely to occur as the time for which the high voltage is supplied to the conductive sample mounting table 12 becomes longer.
  • the low voltage of -1kV or less has a disadvantage that the depth of ion implantation on the surface of the sample 11 is too low. This is because the manufacture of the high voltage pulse power supply unit 13 of -100 kV or more is practically difficult.
  • the operation of the magnetron deposition source 9 used as the deposition source for thin film deposition is performed by the RF-DC combined power in which the RF power 4 and the pulsed DC power 6 overlap. Operate in pulse mode using (8). Then, by supplying the negative high voltage pulse 14 synchronized with the sample 11, the pulse plasma ions generated from the magnetron in the pulse mode can be effectively accelerated to be implanted into the surface of the sample 11.
  • the magnetron deposition source 9 In case of using the RF-DC combined power (8) in which the RF power (4) and the pulsed DC power (6) are superimposed for the operation of the magnetron deposition source (9), the operation using only a simple pulse DC power (6) Operation at lower process pressures is possible. Therefore, it is possible to prevent the loss of ion implantation energy due to the collision with other gas particles during plasma ion implantation, and has the advantage of advancing the ignition time of the pulsed plasma.
  • the magnetron deposition source 9 when the magnetron deposition source 9 is operated in a pulsed mode instead of continuous operation, the magnetron deposition source can be supplied at a very high moment when a pulse is supplied while maintaining a low average power so that there is no problem in cooling the magnetron target.
  • High density plasma can be generated on the surface of (9). This increases the ionization rate of the element emitted from the surface of the magnetron deposition source 9.
  • the ions of the sputtering target element generated in this way are accelerated toward the sample 11 by the synchronized negative high voltage pulse 14 applied to the sample 11 and ions are injected into the surface of the sample 11. do.
  • a solid element plasma using a magnetron deposition source 9 and a high voltage pulse 14 to which an RF-DC coupled power 8 in which an RF power 4 and a pulsed DC power 6 are superimposed is supplied.
  • Ion implantation experiment was performed as follows. An aluminum target having a diameter of 75 mm and a thickness of 6.35 mm was used as the magnetron deposition source 9 for aluminum ion injection, and a silicon wafer was used as the ion injection sample 11. After attaching the sample 11 to the conductive sample holder 12, the vacuum chamber 1 was evacuated to a vacuum of 3 * 10 -6 Torr, and then argon gas was introduced to introduce the argon pressure inside the vacuum chamber 1.
  • the magnetron deposition source 9 was operated by supplying pulsed DC power 6 to the aluminum magnetron deposition source 9, and the RF-DC coupling power 8 supplied to the magnetron deposition source 9 was -1.2 kV, The frequency of the RF-DC coupling power 8 was 100 Hz and the pulse width was 50 usec.
  • Figure 3a is a graph showing the discharge current according to the argon pressure of the magnetron deposition source 9 operated using only a simple pulsed direct current (6) according to an embodiment of the present invention
  • Figure 3b is an embodiment of the present invention
  • the graph shows the discharge current according to the argon pressure of the magnetron deposition source 9 operated using the RF-DC coupled power 8 in which the RF power 4 and the pulsed DC power 6 overlap.
  • the minimum operating argon pressure of the aluminum magnetron deposition source 9 is 1.2 mTorr, and the magnetron at a pressure lower than that. It can be seen that the deposition source 9 cannot be operated. Referring to FIG. 3B, it can be seen that the minimum operating argon pressure of the aluminum magnetron deposition source 9 can be lowered to 0.7 mTorr when the pulsed DC power 6 is superimposed on the 10 W RF power 4. .
  • the magnetron deposition source 9 is operated by using only the pulsed DC power 6 by the above method, or by using the RF-DC coupled power 8 in which the RF power 4 and the pulsed DC power 6 are superimposed. While the negative high voltage pulse 14 was supplied to the sample 11, the aluminum plasma ion implantation process was performed for 15 minutes. When only the pulsed DC power (6) is used, the operating pressure is 1.5 mTorr. When the RF power (4) and the pulsed DC power (6) are superimposed, the operating pressure is 0.9 mTorr. It was.
  • the high voltage pulse 14 value used in the ion implantation experiment was the same as -60 kV and 40usec, and the frequency was synchronized to 100 Hz which is the same as that of the magnetron deposition source 9.
  • the high voltage pulse 14 of 40usec is supplied to the conductive sample mount 12 after about 10usec.
  • Plasma ion implantation was performed at a high state. After the aluminum plasma ion implantation process, the OJ analysis was performed to determine the distribution of elemental depth in the silicon wafer.
  • FIG. 4 also shows a difference in the amount of aluminum ion implanted during the same time. This is because when the RF power 4 is superimposed as described above, since the discharge starts as soon as the pulsed DC power 6 is supplied without the discharge delay phenomenon, the density of the plasma is relatively high. This means that the rate of ion implantation can be increased and the ion implantation process can be performed in a shorter time.

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Abstract

La présente invention a trait à un appareil et à un procédé destinés à une implantation ionique au plasma, qui sont en mesure d'implanter de façon efficace des ions d'une matière première, qui sort à l'état solide lorsqu'elle est température ambiante, dans la surface d'un échantillon sous une faible pression de traitement. L'appareil destiné à une implantation ionique au plasma selon un mode de réalisation de la présente invention comprend : une chambre à vide qui maintient un état sous vide dans celle-ci ; une source de pulvérisation de magnétron qui est couplée à la chambre à vide et qui génère un plasma pulsé à l'intérieur de la chambre à vide ; un étage d'échantillon conducteur qui est installé à un emplacement à l'intérieur de la chambre à vide à l'opposé de la source de pulvérisation de magnétron et sur lequel un échantillon est disposé ; et un coupleur RF-CC qui combine la puissance radioélectrique et la puissance en courant continu pulsées fournies en entrée et qui fournit, à la source de pulvérisation de magnétron, une puissance RF-CC combinée, à savoir une puissance radioélectrique à chevauchement et une puissance en courant continu pulsée.
PCT/KR2012/006211 2011-09-08 2012-08-03 Appareil et procédé destinés à une implantation ionique au plasma WO2013035983A1 (fr)

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KR1020110091468A KR101267459B1 (ko) 2011-09-08 2011-09-08 플라즈마 이온주입 장치 및 방법
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WO2020106354A1 (fr) * 2018-11-21 2020-05-28 Applied Materials, Inc. Circuits de commande d'anneau de bordure dans un dispositif de traitement au plasma à courant continu pulsé mis en forme
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
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US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
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US12094752B2 (en) 2016-01-26 2024-09-17 Applied Materials, Inc. Wafer edge ring lifting solution
US11393710B2 (en) 2016-01-26 2022-07-19 Applied Materials, Inc. Wafer edge ring lifting solution
US10991556B2 (en) 2017-02-01 2021-04-27 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11887879B2 (en) 2017-09-21 2024-01-30 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11728143B2 (en) 2018-05-28 2023-08-15 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
WO2020106354A1 (fr) * 2018-11-21 2020-05-28 Applied Materials, Inc. Circuits de commande d'anneau de bordure dans un dispositif de traitement au plasma à courant continu pulsé mis en forme
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
CN110144560A (zh) * 2019-05-31 2019-08-20 北京航空航天大学 一种复合了脉冲磁控溅射和离子注入的复合表面改性方法及装置

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