WO2013034486A1 - Composant optoélectronique - Google Patents

Composant optoélectronique Download PDF

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Publication number
WO2013034486A1
WO2013034486A1 PCT/EP2012/066901 EP2012066901W WO2013034486A1 WO 2013034486 A1 WO2013034486 A1 WO 2013034486A1 EP 2012066901 W EP2012066901 W EP 2012066901W WO 2013034486 A1 WO2013034486 A1 WO 2013034486A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum well
layer
well structure
optoelectronic component
layers
Prior art date
Application number
PCT/EP2012/066901
Other languages
German (de)
English (en)
Inventor
Simeon Katz
Bastian Galler
Martin Strassburg
Matthias Sabathil
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013034486A1 publication Critical patent/WO2013034486A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Composant optoélectronique (11) qui comporte une couche active à structure à puits quantique (5), ladite structure (5) comprenant au moins une couche barrière (2) en InyGa1-yN, y répondant à la formule 0 ≤ y < 1, et au moins une couche à puits quantique (1) en InzGa1-zN, z répondant à la formule 0 ≤ z < 1 et z étant supérieur à y. La structure à puits quantique (5) comporte au moins une couche intermédiaire (3) en Al1-xInxN, x répondant à la formule 0 ≤ x ≤ 0,6 , qui présente une épaisseur inférieure à 1,5 nm.
PCT/EP2012/066901 2011-09-07 2012-08-30 Composant optoélectronique WO2013034486A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011112713.9 2011-09-07
DE201110112713 DE102011112713A1 (de) 2011-09-07 2011-09-07 Optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
WO2013034486A1 true WO2013034486A1 (fr) 2013-03-14

Family

ID=46796587

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/066901 WO2013034486A1 (fr) 2011-09-07 2012-08-30 Composant optoélectronique

Country Status (3)

Country Link
DE (1) DE102011112713A1 (fr)
TW (1) TW201318203A (fr)
WO (1) WO2013034486A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015114478A1 (de) 2015-08-31 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN113451460B (zh) * 2020-11-20 2022-07-22 重庆康佳光电技术研究院有限公司 发光器件及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110147702A1 (en) * 2009-12-16 2011-06-23 Lehigh University Nitride based quantum well light-emitting devices having improved current injection efficiency

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302784A (ja) * 2004-04-06 2005-10-27 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
WO2010051537A1 (fr) * 2008-10-31 2010-05-06 The Regents Of The University Of California Dispositif optoélectronique à base d'alliages de nitrure d'aluminium-indium et de nitrure d'aluminium-indium-gallium non polaires et semi-polaires

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110147702A1 (en) * 2009-12-16 2011-06-23 Lehigh University Nitride based quantum well light-emitting devices having improved current injection efficiency

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIOUPAKIS ET AL.: "Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes", APPLIED PHYSICS LETTERS, vol. 98, 2011, pages 161107, XP012140356, DOI: doi:10.1063/1.3570656
MENG ZHANG ET AL: "High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (lamda=495nm)", JOURNAL OF CRYSTAL GROWTH, vol. 323, no. 1, 21 December 2010 (2010-12-21), pages 470 - 472, XP028385416, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2010.12.038 *

Also Published As

Publication number Publication date
TW201318203A (zh) 2013-05-01
DE102011112713A1 (de) 2013-03-07

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