WO2013034411A3 - Appareil de revêtement sous vide - Google Patents

Appareil de revêtement sous vide Download PDF

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Publication number
WO2013034411A3
WO2013034411A3 PCT/EP2012/065908 EP2012065908W WO2013034411A3 WO 2013034411 A3 WO2013034411 A3 WO 2013034411A3 EP 2012065908 W EP2012065908 W EP 2012065908W WO 2013034411 A3 WO2013034411 A3 WO 2013034411A3
Authority
WO
WIPO (PCT)
Prior art keywords
coating apparatus
vacuum coating
electrode
substrate
counter
Prior art date
Application number
PCT/EP2012/065908
Other languages
English (en)
Other versions
WO2013034411A2 (fr
Inventor
Andreas Geiss
Guido Mahnke
Harald Rost
Michael Klosch-Trageser
Original Assignee
Schmid Vacuum Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Vacuum Technology Gmbh filed Critical Schmid Vacuum Technology Gmbh
Publication of WO2013034411A2 publication Critical patent/WO2013034411A2/fr
Publication of WO2013034411A3 publication Critical patent/WO2013034411A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

La présente invention se rapporte à un appareil de revêtement sous vide qui comprend une chambre de revêtement pouvant être mise sous vide (12). Un support de substrat (28), destiné à supporter un substrat (30) qui doit être recouvert, comprend une électrode (24) située au-dessus du substrat (30) qui doit être recouvert, et comprend une contre-électrode (32), le support de substrat (28) étant maintenu sur une plaque (32) qui se compose de préférence de graphite et qui est raccordée à la contre-électrode.
PCT/EP2012/065908 2011-09-05 2012-08-14 Appareil de revêtement sous vide WO2013034411A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011113293A DE102011113293A1 (de) 2011-09-05 2011-09-05 Vakuumbeschichtungsvorrichtung
DE102011113293.0 2011-09-05

Publications (2)

Publication Number Publication Date
WO2013034411A2 WO2013034411A2 (fr) 2013-03-14
WO2013034411A3 true WO2013034411A3 (fr) 2013-09-12

Family

ID=46650561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/065908 WO2013034411A2 (fr) 2011-09-05 2012-08-14 Appareil de revêtement sous vide

Country Status (3)

Country Link
DE (1) DE102011113293A1 (fr)
TW (1) TW201327618A (fr)
WO (1) WO2013034411A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215562A (zh) * 2013-04-25 2013-07-24 光垒光电科技（上海）有限公司 反应腔室
CN108699690B (zh) 2015-11-05 2021-07-09 布勒阿尔策瑙有限责任公司 用于真空涂覆的装置和方法
DE102020124022A1 (de) 2020-09-15 2022-03-17 centrotherm international AG Werkstückträger, System und Betriebsverfahren für PECVD

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (fr) * 1986-12-19 1988-06-22 Applied Materials, Inc. Procèdè de dèpÔt chimique en phase vapeur à l'aide d'un plasma de dioxyde de silicium à partir de TEOS.
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
EP0824266A2 (fr) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Dispositif pour le traitement de substrats
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2007101207A2 (fr) * 2006-02-27 2007-09-07 Anaconda Semi Lp Chambres de traitement stratifiées pour outil de traitement à vide de substrat
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
US20110039414A1 (en) * 2008-03-19 2011-02-17 Sanyo Electric Co.,Ltd. Plasma processing method and plasma processing apparatus
WO2012054200A2 (fr) * 2010-10-20 2012-04-26 Applied Materials, Inc. Conception de chambre de distribution double

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6626186B1 (en) 1998-04-20 2003-09-30 Tokyo Electron Limited Method for stabilizing the internal surface of a PECVD process chamber
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US7279049B2 (en) * 2004-02-05 2007-10-09 Applied Materials, Inc. Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
WO2006055984A2 (fr) * 2004-11-22 2006-05-26 Applied Materials, Inc. Appareil de traitement de substrats au moyen d'une chambre de traitement par lots
US7740705B2 (en) * 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (fr) * 1986-12-19 1988-06-22 Applied Materials, Inc. Procèdè de dèpÔt chimique en phase vapeur à l'aide d'un plasma de dioxyde de silicium à partir de TEOS.
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
EP0824266A2 (fr) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Dispositif pour le traitement de substrats
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2007101207A2 (fr) * 2006-02-27 2007-09-07 Anaconda Semi Lp Chambres de traitement stratifiées pour outil de traitement à vide de substrat
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20110039414A1 (en) * 2008-03-19 2011-02-17 Sanyo Electric Co.,Ltd. Plasma processing method and plasma processing apparatus
WO2012054200A2 (fr) * 2010-10-20 2012-04-26 Applied Materials, Inc. Conception de chambre de distribution double

Also Published As

Publication number Publication date
DE102011113293A1 (de) 2013-03-07
TW201327618A (zh) 2013-07-01
WO2013034411A2 (fr) 2013-03-14

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