WO2013033428A3 - In situ process kit clean for mocvd chambers - Google Patents

In situ process kit clean for mocvd chambers Download PDF

Info

Publication number
WO2013033428A3
WO2013033428A3 PCT/US2012/053186 US2012053186W WO2013033428A3 WO 2013033428 A3 WO2013033428 A3 WO 2013033428A3 US 2012053186 W US2012053186 W US 2012053186W WO 2013033428 A3 WO2013033428 A3 WO 2013033428A3
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
showerhead
carrier plate
deposited
cleaning process
Prior art date
Application number
PCT/US2012/053186
Other languages
French (fr)
Other versions
WO2013033428A2 (en
Inventor
Jiang Lu
Hua Chung
Yan Wang
Kuan Chien Keris Shen
Xizi Dong
Alain Duboust
Wei-Yung Hsu
Kevin S. Griffin
Donald J.K. Olgado
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2013033428A2 publication Critical patent/WO2013033428A2/en
Publication of WO2013033428A3 publication Critical patent/WO2013033428A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Abstract

Embodiments of the invention include methods of in situ cleaning of deposited materials from the surfaces of processing chambers, e.g., MOCVD processing chambers. The cleaning process increases the time between preventative maintenance cleanings and reduces chamber down-time by targeting the removal of the layers deposited on the interior surfaces of the chamber body and/or liner, as well as the process kit components. The cleaning process occurs while shielding the showerhead and a carrier plate from at least some of the cleaning gases used during the cleaning process. To prevent chemical attack of the layers already deposited on the surface of the showerhead, and to prevent poisoning of the layers deposited after performing the cleaning process, the showerhead and the carrier plate are shielded from the cleaning gas by delivering an inert gas through the showerhead and across the surface of the carrier plate and/or cleaning plate during the cleaning.
PCT/US2012/053186 2011-08-30 2012-08-30 In situ process kit clean for mocvd chambers WO2013033428A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161529188P 2011-08-30 2011-08-30
US61/529,188 2011-08-30
US201161551846P 2011-10-26 2011-10-26
US61/551,846 2011-10-26

Publications (2)

Publication Number Publication Date
WO2013033428A2 WO2013033428A2 (en) 2013-03-07
WO2013033428A3 true WO2013033428A3 (en) 2013-04-25

Family

ID=47757176

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/053186 WO2013033428A2 (en) 2011-08-30 2012-08-30 In situ process kit clean for mocvd chambers

Country Status (1)

Country Link
WO (1) WO2013033428A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101802254B (en) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 Chemical vapor deposition reactor
CN105200397B (en) * 2015-09-24 2018-07-10 南昌大学 The antihunt means and chlorine-resistant bilayer nozzle and production method of head-type MOCVD original states
DE102017100725A1 (en) 2016-09-09 2018-03-15 Aixtron Se CVD reactor and method for cleaning a CVD reactor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010075426A (en) * 1998-09-30 2001-08-09 조셉 제이. 스위니 Method for cleaning a process chamber
KR20040063444A (en) * 2003-01-07 2004-07-14 삼성전자주식회사 Chemical vapor deposition system and method of cleaning the same
US20050003088A1 (en) * 2003-07-01 2005-01-06 Park Young Hoon Method of depositing thin film on wafer
US20070144557A1 (en) * 2005-12-27 2007-06-28 Lee Ki-Hoon Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film
KR20090088732A (en) * 2008-02-15 2009-08-20 주식회사 에이디피엔지니어링 Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010075426A (en) * 1998-09-30 2001-08-09 조셉 제이. 스위니 Method for cleaning a process chamber
KR20040063444A (en) * 2003-01-07 2004-07-14 삼성전자주식회사 Chemical vapor deposition system and method of cleaning the same
US20050003088A1 (en) * 2003-07-01 2005-01-06 Park Young Hoon Method of depositing thin film on wafer
US20070144557A1 (en) * 2005-12-27 2007-06-28 Lee Ki-Hoon Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film
KR20090088732A (en) * 2008-02-15 2009-08-20 주식회사 에이디피엔지니어링 Plasma processing apparatus

Also Published As

Publication number Publication date
WO2013033428A2 (en) 2013-03-07

Similar Documents

Publication Publication Date Title
WO2012136876A8 (en) Atomic layer deposition with plasma source
WO2012118952A3 (en) Apparatus and process for atomic layer deposition
WO2012009371A3 (en) Compartmentalized chamber
WO2012051022A3 (en) Method and apparatus for reducing particle defects in plasma etch chambers
WO2011031556A3 (en) Gas distribution showerhead and method of cleaning
WO2012145492A3 (en) Apparatus for deposition of materials on a substrate
MX2014011501A (en) Dry-ice cleaning device and process for a painting installation.
EA201270338A1 (en) METHOD AND DEVICE FOR CONTROLLING THE COATING PROCESS BY DEPOSITION METHOD
WO2009131857A3 (en) A hardware set for growth of high k and capping material films
WO2010123877A3 (en) Cvd apparatus for improved film thickness non-uniformity and particle performance
MY191327A (en) Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces
WO2012107332A3 (en) Cleaning apparatus for cleaning articles
WO2012118887A3 (en) Apparatus and process for atomic layer deposition
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
SG10201406621WA (en) Method and apparatus for depositing a material layer originating from process gas on a substrate wafer
MX342052B (en) A cleaning tool and a method for treating an inner surface of a casing.
WO2007016592A3 (en) Gas manifold valve cluster
WO2009158311A3 (en) Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
SG10201906117XA (en) Chamber cleaning and semiconductor etching gases
WO2012065695A3 (en) Method and system for cleaning sheet- or plate-like objects
SG11202113066RA (en) In-situ process chamber chuck cleaning by cleaning substrate
WO2011059891A3 (en) Chamber with uniform flow and plasma distribution
WO2012170511A3 (en) Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
WO2013033428A3 (en) In situ process kit clean for mocvd chambers
WO2016072850A3 (en) Atomic layer deposition apparatus and method for processing substrates using an apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12828269

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12828269

Country of ref document: EP

Kind code of ref document: A2