WO2013031346A1 - Organic electroluminescence element, display device, and illumination device - Google Patents

Organic electroluminescence element, display device, and illumination device Download PDF

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WO2013031346A1
WO2013031346A1 PCT/JP2012/065691 JP2012065691W WO2013031346A1 WO 2013031346 A1 WO2013031346 A1 WO 2013031346A1 JP 2012065691 W JP2012065691 W JP 2012065691W WO 2013031346 A1 WO2013031346 A1 WO 2013031346A1
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layer
emitting layer
ring
light emitting
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みゆき 岡庭
和博 及川
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コニカミノルタホールディングス株式会社
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00Other synthetic dyes of known constitution
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/10Triplet emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

Definitions

  • the present invention relates to an organic electroluminescence element, and more particularly to an organic electroluminescence element excellent in luminous efficiency, luminous lifetime and luminance unevenness, and a display device and an illumination device using the same.
  • organic electroluminescence elements using organic substances are promising for use as solid light-emitting inexpensive large-area full-color display elements and writing light source arrays.
  • the organic EL element is composed of an organic functional layer (single layer portion or multilayer portion) having a thickness of only about 0.1 ⁇ m containing an organic light emitting material between a pair of anode and cathode formed on a film. It is a thin film type all solid state device.
  • a relatively low voltage of about 2 to 20 V is applied to such an organic EL element, electrons are injected from the cathode and holes are injected from the anode into the organic compound layer.
  • emission is obtained by releasing energy as light when the electrons and holes recombine in the light emitting layer and the energy level returns from the conduction band to the valence band. This technology is expected as a flat display and lighting.
  • an anode made of ITO Indium Tin Oxide
  • a film made with an aqueous solvent hole injection layer
  • a light emitting layer an alkali metal such as LiF
  • an alkali metal such as LiF
  • an alkali such as LiF
  • an alkali such as LiF
  • an alkali such as LiF
  • an alkali such as LiF
  • an alkali such as LiF
  • an alkali such as LiF
  • the light emitting layer manufactured by the coating process has a problem that the film thickness is not uniform compared to the light emitting layer formed by using the vapor deposition process, and luminance unevenness is likely to occur.
  • the film formed using the coating process is a coarse film as compared with the film formed using the vapor deposition process, and is easily affected by the diffusion material from the peripheral layer. Also in the film production, it is affected by the physical properties of the coating liquid, the coating process and the drying process, and it is very difficult to produce a uniform film particularly in a large area.
  • Patent Document 2 discloses a method for increasing the density of a film. Specifically, a method is disclosed in which the entire organic EL element is compressed with a laminate material to uniformly pressurize the film to increase the film density and raise the rough film formed by coating to the vapor deposition level.
  • Patent Document 3 discloses a method of suppressing luminance unevenness. More specifically, a method of providing a partition and reducing luminance unevenness by making the film surface uniform by an ink jet method / nozzle coating method is disclosed (Patent Document 3).
  • Patent Document 3 discloses a method of suppressing luminance unevenness. More specifically, a method of providing a partition and reducing luminance unevenness by making the film surface uniform by an ink jet method / nozzle coating method is disclosed (Patent Document 3).
  • Patent Document 3 the effect of suppressing luminance unevenness is insufficient for a large area.
  • the thickness of the electron injection layer composed of a chemically unstable material is increased to about 5 to 10 nm, the lifetime of the organic EL element, that is, the reliability is lowered.
  • the lifetime of the organic EL element that is, the reliability is lowered.
  • an anode and a hole injection layer made of a transparent conductive material such as ITO (Indium Tin Oxide) are generally formed.
  • ITO Indium Tin Oxide
  • the light emitting layer formed using the coating method is a rough film, the lifetime of the light emitting layer may be reduced by indium atoms diffused from the anode to the light emitting layer.
  • various problems occur in the organic EL element mainly due to the fact that the light emitting layer formed using the coating method is a rough film.
  • a main object of the present invention is to provide an organic electroluminescence element excellent in luminous efficiency, light emission lifetime and luminance unevenness
  • another object of the present invention is a display device using the organic electroluminescence element and The object is to provide a lighting device.
  • an organic electroluminescence device comprising: The film density of the light emitting layer is ⁇ EM, the film density of the hole transport layer is ⁇ HT, the film density of the electron transport layer is ⁇ ET, and the film density of the light emitting layer and the film density of the hole transport layer are When the difference between ⁇ (EM ⁇ HT) and the difference between the film density of the light emitting layer and the film density of the electron transport layer is ⁇ (EM ⁇ ET), both conditional expressions (i) and (ii) An organic electroluminescence device characterized by satisfying the above is provided.
  • ⁇ (EM ⁇ HT) ( ⁇ EM ⁇ HT) ⁇ 0.03 (i) ⁇ (EM ⁇ ET)
  • the present invention it is possible to improve the light emission efficiency and the light emission lifetime, and to suppress the occurrence of luminance unevenness.
  • an organic electroluminescence element 100 (hereinafter also referred to as an organic EL element) according to a preferred embodiment of the present invention has a flexible support substrate 1.
  • An anode 2 is formed on the flexible support substrate 1
  • an organic functional layer 20 is formed on the anode 2
  • a cathode 8 is formed on the organic functional layer 20.
  • the organic functional layer 20 refers to each layer constituting the organic electroluminescence element 100 provided between the anode 2 and the cathode 8.
  • the organic functional layer 20 includes, for example, a hole injection layer 3, a hole transport layer 4, a light emitting layer 5, an electron transport layer 6, an electron injection layer 7, and in addition, a hole block layer, an electron block layer, and the like. May be included.
  • the anode 2, the organic functional layer 20, and the cathode 8 on the flexible support substrate 1 are sealed with a flexible sealing member 10 through a sealing adhesive 9.
  • these layer structures (refer FIG. 1) of the organic electroluminescent element 100 show only the preferable specific example, and this invention is not limited to these.
  • the organic EL device 100 according to the present invention may have a layer structure of (i) to (viii).
  • Organic functional layer 20 of organic EL element >> Subsequently, the detail of the organic functional layer which comprises the organic EL element of this invention is demonstrated.
  • the injection layer can be provided as necessary.
  • the injection layer includes an electron injection layer and a hole injection layer, and may be present between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer as described above.
  • the injection layer referred to in the present invention is a layer provided between the electrode and the organic functional layer in order to lower the driving voltage and improve the light emission luminance. “The organic EL element and its industrialization front line (November 30, 1998, NT.
  • Injection materials include triazole derivatives, oxadiazole derivatives, imidazole derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives.
  • the details of the electron injection layer are described in, for example, JP-A-6-325871, JP-A-9-17574, and JP-A-10-74586, and specific examples thereof include strontium and aluminum.
  • the buffer layer (injection layer) is desirably a very thin film, and potassium fluoride and sodium fluoride are preferable.
  • the film thickness is about 0.1 nm to 5 ⁇ m, preferably 0.1 to 100 nm, more preferably 0.5 to 10 nm, and most preferably 0.5 to 4 nm.
  • Hole transport layer 4 As the hole transport material constituting the hole transport layer, the same compounds as those applied in the hole injection layer can be used, and further, porphyrin compounds, aromatic tertiary amine compounds, and styryl. It is preferable to use an amine compound, particularly an aromatic tertiary amine compound.
  • aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
  • inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
  • the hole transport layer is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Can do.
  • the thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
  • the hole transport layer may have a single layer structure composed of one or more of the above materials.
  • n described in the above exemplary compounds represents the degree of polymerization and represents an integer having a weight average molecular weight in the range of 50,000 to 200,000. If the weight average molecular weight is less than this range, there is a concern of mixing with other layers during film formation due to the high solubility in the solvent. Even if a film can be formed, the light emission efficiency does not increase at a low molecular weight. When the weight average molecular weight is larger than this range, problems arise due to difficulty in synthesis and purification. Since the molecular weight distribution increases and the residual amount of impurities also increases, the light emission efficiency, voltage, and life of the organic EL element deteriorate. These polymer compounds are disclosed in Makromol. Chem. , Pages 193, 909 (1992) and the like.
  • Electron transport layer 6 The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
  • the electron transport layer can be provided as a single layer or a plurality of layers. Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the cathode side with respect to the light emitting layer is injected from the cathode. As long as it has a function of transmitting electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds.
  • fluorene derivatives for example, fluorene derivatives, carbazole derivatives, azacarbazole And metal complexes such as derivatives, oxadiazole derivatives, triazole derivatives, silole derivatives, pyridine derivatives, pyrimidine derivatives, 8-quinolinol derivatives, and the like.
  • metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material.
  • a carbazole derivative, an azacarbazole derivative, a pyridine derivative, and the like are preferable in the present invention, and an azacarbazole derivative is more preferable.
  • the electron transport layer can be formed by thinning the electron transport material by a known method such as a spin coating method, a casting method, a printing method including an ink jet method, an LB method, and the like, preferably
  • the electron transport material can be formed by a wet process using a coating solution containing a fluorinated alcohol solvent.
  • the thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
  • the electron transport layer may have a single layer structure composed of one or more of the above materials.
  • an electron transport layer with high n property doped with impurities as a guest material can be used.
  • examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
  • the electron transport layer in the present invention preferably contains an organic alkali metal salt.
  • organic substance but formate, acetate, propionic acid, butyrate, valerate, caproate, enanthate, caprylate, oxalate, malonate, succinate Benzoate, phthalate, isophthalate, terephthalate, salicylate, pyruvate, lactate, malate, adipate, mesylate, tosylate, benzenesulfonate ,
  • the type of alkali metal of the alkali metal salt of the organic substance is not particularly limited, and examples thereof include Na, K, and Cs, preferably K, Cs, and more preferably Cs.
  • Examples of the alkali metal salt of the organic substance include a combination of the organic substance and the alkali metal, preferably, formic acid Li, formic acid K, formic acid Na, formic acid Cs, acetic acid Li, acetic acid K, Na acetate, acetic acid Cs, propionic acid Li, Propionic acid Na, propionic acid K, propionic acid Cs, oxalic acid Li, oxalic acid Na, oxalic acid K, oxalic acid Cs, malonic acid Li, malonic acid Na, malonic acid K, malonic acid Cs, succinic acid Li, succinic acid Na, succinic acid K, succinic acid Cs, benzoic acid Li, benzoic acid Na, benzoic acid K, benzoic acid Li,
  • the light emitting layer constituting the organic EL device of the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is the light emitting layer. It may be in the layer or the interface between the light emitting layer and the adjacent layer.
  • the light emitting layer according to the present invention is not particularly limited in its configuration as long as the contained light emitting material satisfies the above requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. It is preferable to have a non-light emitting intermediate layer between each light emitting layer.
  • the total thickness of the light emitting layers in the present invention is preferably in the range of 1 to 100 nm, and more preferably 50 nm or less because a lower driving voltage can be obtained.
  • the sum total of the film thickness of the light emitting layer as used in this invention is a film thickness also including the said intermediate
  • the film thickness of each light emitting layer is preferably adjusted in the range of 1 to 50 nm.
  • each light emitting layer may emit light of each color of blue, green, and red, and there is no particular limitation on the relationship between the thickness of each light emitting layer.
  • a plurality of light emitting materials may be mixed in each light emitting layer, or a phosphorescent light emitting material and a fluorescent light emitting material may be mixed and used in the same light emitting layer.
  • the structure of the light-emitting layer preferably contains a host compound and a light-emitting material (also referred to as a light-emitting dopant compound) and emits light from the light-emitting material.
  • (4.1) Host compound As the host compound contained in the light emitting layer of the organic EL device of the present invention, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.
  • known host compounds may be used alone or in combination of two or more. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of luminescent material mentioned later, and can thereby obtain arbitrary luminescent colors.
  • the light emitting host used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (polymerizable light emission).
  • a polymer material it is difficult to purify, and the phenomenon that the compound is difficult to escape such as swelling and gelation due to incorporation of the solvent is likely to occur. It is preferably not high, and specifically, a material having a molecular weight of 2,000 or less at the time of coating is preferably used, and a material having a molecular weight of 1,000 or less at the time of coating is more preferably used.
  • the known host compound a compound having a hole transporting ability and an electron transporting ability, preventing an increase in the wavelength of light emission, and having a high Tg (glass transition temperature) is preferable.
  • the glass transition point (Tg) is a value determined by a method based on JIS-K-7121 using DSC (Differential Scanning Colorimetry).
  • Specific examples of known host compounds include compounds described in the following documents. For example, Japanese Patent Laid-Open Nos.
  • the host compound used in the present invention is preferably a carbazole derivative.
  • the host compound is preferably a compound represented by the general formula (1).
  • X represents NR ′, O, S, CR′R ′′ or SiR′R ′′.
  • R ′ and R ′′ each represent a hydrogen atom or a substituent.
  • Ar represents an aromatic ring.
  • N represents an integer of 0 to 8.
  • examples of the substituent represented by R ′ and R ′′ include an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a t-butyl group, a pentyl group, Hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), cycloalkyl group (for example, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (for example, vinyl group, allyl group, etc.), alkynyl group ( For example, ethynyl group, propargyl group, etc.), aromatic hydrocarbon ring group (aromatic carbocyclic group, aryl group, etc.), for example, phenyl group, p-chlorophenyl group, mesity
  • These substituents may be further substituted with the above substituents.
  • a plurality of these substituents may be bonded to each other to form a ring.
  • X is preferably NR ′ or O
  • R ′ is an aromatic hydrocarbon group (also referred to as an aromatic carbocyclic group, an aryl group, etc., for example, a phenyl group, a p-chlorophenyl group, a mesityl group, A tolyl group, a xylyl group, a naphthyl group, an anthryl group, an azulenyl group, an acenaphthenyl group, a fluorenyl group, a phenanthryl group, an indenyl group, a pyrenyl group, a biphenylyl group, or an aromatic heterocyclic group (for example, a furyl group, a thienyl group, a pyridyl group) Group, pyridazinyl group, pyrimidinyl group, pyrazinyl group, triazinyl group, imidazolyl group,
  • aromatic hydrocarbon group and aromatic heterocyclic group each may have a substituent represented by R ′ or R ′′ in X of the general formula (1).
  • examples of the aromatic ring represented by Ar include an aromatic hydrocarbon ring and an aromatic heterocyclic ring.
  • the aromatic ring may be a single ring or a condensed ring, and may be unsubstituted or may have a substituent represented by R ′ or R ′′ in X of the general formula (1).
  • examples of the aromatic hydrocarbon ring represented by Ar include a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring, pyrene ring, Examples include a pyranthrene ring and anthraanthrene ring. These rings may further have substituents represented by R ′ and R ′′ in X of the partial structure represented by the general
  • examples of the aromatic heterocycle represented by Ar include a furan ring, a dibenzofuran ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, and a pyrimidine ring.
  • These rings may further have substituents represented by R ′ and R ′′ in the general formula (1).
  • the aromatic ring represented by Ar is preferably a carbazole ring, a carboline ring, a dibenzofuran ring, or a benzene ring, and more preferably a carbazole ring, A carboline ring and a benzene ring, more preferably a benzene ring having a substituent, and particularly preferably a benzene ring having a carbazolyl group.
  • the aromatic ring represented by Ar is preferably a condensed ring of three or more rings, and the aromatic hydrocarbon condensed ring condensed with three or more rings is specifically exemplified.
  • aromatic heterocycle condensed with three or more rings include an acridine ring, a benzoquinoline ring, a carbazole ring, a carboline ring, a phenazine ring, a phenanthridine ring, a phenanthroline ring, a carboline ring, a cyclazine ring, Kindin ring, tepenidine ring, quinindrin ring, triphenodithiazine ring, triphenodioxazine ring, phenanthrazine ring, anthrazine ring, perimidine ring, diazacarbazole ring (any one of the carbon atoms constituting the carboline ring is a nitrogen atom Phenanthroline ring, dibenzofuran ring, dibenzothiophene ring, naphthofuran ring, naphthothiophene ring, benzodifuran ring, benzod
  • n represents an integer of 0 to 8, preferably 0 to 2, particularly preferably 1 to 2 when X is O or S.
  • a host compound having both a dibenzofuran ring and a carbazole ring is particularly preferable.
  • Luminescent dopant compound (also referred to as a luminescent dopant) will be described.
  • a fluorescent dopant also referred to as a fluorescent compound
  • a phosphorescent dopant also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like
  • a fluorescent dopant also referred to as a fluorescent compound
  • a phosphorescent dopant also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like
  • Fluorescent dopant also called fluorescent compound
  • fluorescent dopants coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes , Polythiophene dyes, rare earth complex phosphors, and the like, and compounds having a high fluorescence quantum yield such as laser dyes.
  • the phosphorescent dopant compound according to the present invention is a compound in which light emission from an excited triplet is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
  • the phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition.
  • the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
  • the other is a carrier trap type in which a phosphorescent dopant serves as a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant compound is obtained.
  • a carrier trap type in which a phosphorescent dopant serves as a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant compound is obtained.
  • it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
  • the light-emitting dopant according to the present invention may be used in combination of a plurality of types of compounds, or may be a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
  • the film density of the light emitting layer has a certain relationship with the film density of the other layers.
  • the film density of the light emitting layer is ⁇ EM
  • the film density of the hole transport layer is ⁇ HT
  • the film density of the electron transport layer is ⁇ ET
  • the difference between the film density of the light emitting layer and the film density of the hole transport layer is When ⁇ (EM ⁇ HT) and the difference between the film density of the light emitting layer and the film density of the electron transport layer are ⁇ (EM ⁇ ET), both of the conditional expressions (i) and (ii) are satisfied.
  • ⁇ (EM ⁇ HT) ( ⁇ EM ⁇ HT) ⁇ 0.03
  • ⁇ (EM ⁇ ET) ( ⁇ EM ⁇ ET) ⁇ 0.03 (ii)
  • the value of ⁇ EM is preferably 1.40 or more.
  • the light emitting layer and the non-light emitting layer are formed.
  • the value of ⁇ EM is the largest, and the non-light emitting layer has a higher film density as the layer is closer to the light emitting layer.
  • hole injection is performed on the anode.
  • the film density of the light emitting layer is larger than the film density of each of the hole injection layer and the hole transport layer, Of the hole injection layer and the hole transport layer of the non-light emitting layer, the film density of the hole transport layer close to the light emitting layer is higher than the film density of the hole injection layer.
  • a cathode is formed on the support substrate, and two non-light-emitting layers, ie, an electron injection layer and an electron transport layer, are formed between the cathode and the light-emitting layer.
  • the film density of the light-emitting layer is larger than the film density of the electron injection layer and the electron transport layer, and the electron injection layer of the non-light-emitting layer And the electron transport layer, the film density of the electron transport layer close to the light emitting layer is larger than the film density of the electron injection layer.
  • the film density of the present invention can be determined by an X-ray reflectance measurement method. It is obtained by measuring the reflectance at a very low angle, for example, in the range of 0.2 to 2 degrees, and fitting the obtained reflectance curve to the reflectance formula of the multilayer film sample obtained from the Fresnel formula. .
  • the X-ray generation source is operated at 50 kV-300 mA with copper as a target. X-rays monochromatized with a multilayer mirror and a Ge (111) channel cut monochromator are used.
  • GXRRVer. 2.1.0.0 Measurements can be made using analysis software.
  • each layer of organic functional layer it is sufficient that at least one light emitting layer as a constituent layer is formed by a coating method, and the method for forming the other layers is not particularly limited to the coating method, and is necessary. In accordance with the above, it is also possible to form a film using a vapor deposition method or the like.
  • a coating method (also referred to as a coating film forming method) is used as a method for forming a light emitting layer.
  • a method for forming the light emitting layer there are a spin coat method, a cast method, an ink jet method, a spray method, a printing method, a slot type coater method and the like.
  • the light emitting layer is preferably formed by a coating method such as a spin coating method, an ink jet method, a spray method, a printing method, or a slot coater method.
  • the slot type coater method is preferably used.
  • the coating solution is dried.
  • spin drying hot air drying, far-infrared drying, vacuum drying, reduced pressure drying, or the like can be applied.
  • the “coating film-forming method” as used herein means a process from application of a coating solution to completion of drying of the coating solution.
  • the present inventors prepared low molecular organic thin films formed so as to have the same film thickness by various coating film forming methods, and suppressed the size and content of contained microcrystals in the low molecular organic thin films.
  • one type of host material is mixed in the light emitting layer, preferably three or more types are mixed, more preferably five or more types are mixed, and still more preferably seven or more types are mixed. Is good.
  • the light emitting layer at least two kinds of dopant materials are preferably mixed, and more preferably three or more kinds are mixed.
  • the solvent of the coating solution for the light emitting layer a low boiling point solvent having a boiling point of 100 ° C. or less is used, and preferably isopropyl acetate or npropyl acetate is used.
  • the coating solution for the light emitting layer is preferably composed of two or more mixed solvents.
  • the film is preferably formed in a coating environment of 35 ° C. or higher, and is preferably formed at 40 ° C. or higher.
  • the coating solution for the light emitting layer may be subjected to a drying treatment within 5 seconds after being applied (after completion of the coating), and is preferably subjected to a drying treatment within 3 seconds after being applied. Good.
  • cooling may be performed after coating and drying.
  • spin drying, hot air drying, far infrared drying, vacuum drying, reduced pressure drying, or the like can be applied.
  • the “film thickness that is 5% more than the final film thickness after drying” means that, for example, when a thin film having a final film thickness after drying of 50 nm is to be produced, the film thickness is 52.5 nm. It corresponds to.
  • a spectroscopic ellipsometer for example, UVISEL manufactured by Joban Yvon
  • UVISEL manufactured by Joban Yvon
  • an electrode material made of a metal, an alloy, an electrically conductive compound or a mixture thereof having a high work function (4 eV or more) is preferably used.
  • electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
  • conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
  • an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used.
  • these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a desired shape pattern may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 ⁇ m or more)
  • a pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
  • wet film-forming methods such as a printing system and a coating system, can also be used.
  • the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred ⁇ / ⁇ or less.
  • the film thickness depends on the material, it is usually in the range of 10 to 1000 nm, preferably in the range of 10 to 200 nm.
  • Cathode 8 a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used.
  • electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
  • a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
  • the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
  • the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
  • the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
  • the light emission luminance is improved, which is convenient.
  • a transparent or translucent cathode can be produced by forming the above metal on the cathode with a film thickness of 1 to 20 nm and then forming the conductive transparent material mentioned in the description of the anode thereon. By applying this, an organic EL element in which both the anode and the cathode are transmissive can be produced.
  • the support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. Since the effect of suppressing high-temperature storage stability and chromaticity variation appears greatly in a flexible substrate than a rigid substrate, a particularly preferable support substrate has flexibility that can give flexibility to an organic EL element. Resin film.
  • polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (
  • an inorganic film, an organic film or a hybrid film of both may be formed on the surface of the resin film.
  • the film is preferably a high-barrier film having a degree of 10 ⁇ 3 cm 3 / (m 2 ⁇ 24 h ⁇ atm) or less and a water vapor permeability of 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less.
  • the degree is 10 ⁇ 5 g / (m 2 ⁇ 24 h) or less.
  • a material for forming the barrier film any material may be used as long as it has a function of suppressing entry of factors that cause deterioration of the organic EL element such as moisture and oxygen.
  • silicon oxide, silicon dioxide, silicon nitride, or the like is used. Can do.
  • the method for forming the barrier film is not particularly limited.
  • a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
  • the opaque support substrate examples include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
  • the external extraction efficiency of light emission at room temperature is preferably 1% or more, more preferably 5% or more.
  • the external extraction quantum efficiency (%) the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element ⁇ 100.
  • Sealing (sealing adhesive 9, sealing member 10)
  • a sealing means applicable to the organic EL element of the present invention for example, a method of adhering a sealing member, an electrode, and a support substrate with an adhesive can be mentioned.
  • a sealing member it should just be arrange
  • Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
  • Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
  • Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicone, germanium, and tantalum.
  • a polymer film and a metal film can be preferably used because the element can be thinned.
  • the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 cm 3 / (m 2 ⁇ 24 h ⁇ atm) or less, and conforms to JIS K 7129-1992.
  • the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured by the above method is preferably 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less.
  • sandblasting, chemical etching, or the like is used for processing the sealing member into a concave shape.
  • the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. Can be mentioned. Moreover, heat
  • coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
  • the material for forming the film may be a material having a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
  • silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
  • vacuum deposition method sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma
  • a polymerization method a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
  • an inert gas such as nitrogen or argon, an inert gas such as fluorinated hydrocarbon or silicon oil is used. It is preferable to inject a liquid. A vacuum is also possible.
  • a hygroscopic compound can also be enclosed inside. Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
  • metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
  • perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
  • anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
  • Sealing includes casing type sealing (can sealing) and close contact type sealing (solid sealing), but solid sealing is preferable from the viewpoint of thinning. Moreover, when producing a flexible organic EL element, since sealing is also required for the sealing member, solid sealing is preferable.
  • thermosetting adhesive such as an epoxy resin, an acrylic resin, or a silicone resin, more preferably moisture resistant.
  • a thermosetting adhesive such as an epoxy resin, an acrylic resin, or a silicone resin, more preferably moisture resistant.
  • It is an epoxy thermosetting adhesive resin that is excellent in water resistance and water resistance and has little shrinkage during curing.
  • the water content of the sealing adhesive according to the present invention is preferably 300 ppm or less, more preferably 0.01 to 200 ppm, and most preferably 0.01 to 100 ppm.
  • the moisture content referred to in the present invention may be measured by any method.
  • a volumetric moisture meter Karl Fischer
  • an infrared moisture meter a microwave transmission moisture meter
  • a heat-dry weight method GC / MS , IR, DSC (differential scanning calorimeter), TDS (temperature programmed desorption analysis).
  • a precision moisture meter AVM-3000 Omnitech
  • moisture can be measured from a pressure increase caused by evaporation of moisture, and moisture content of a film or a solid film can be measured.
  • the moisture content of the sealing adhesive can be adjusted by, for example, placing it in a nitrogen atmosphere with a dew point temperature of ⁇ 80 ° C. or lower and an oxygen concentration of 0.8 ppm, and changing the time.
  • the sealing adhesive can be dried in a vacuum state of 100 Pa or less while changing the time.
  • the sealing adhesive can be dried only with an adhesive, but can also be placed in advance on the sealing member and dried.
  • the sealing member for example, a 50 ⁇ m thick PET (polyethylene terephthalate) laminated with an aluminum foil (30 ⁇ m thick) is used.
  • a sealing adhesive is placed in advance, the resin substrate 1 and the sealing member 5 are aligned, and both are pressure-bonded ( 0.1-3 MPa) and a temperature of 80-180 ° C. for close contact / bonding (adhesion), and close sealing (solid sealing).
  • Heating or pressure bonding time varies depending on the type, amount, and area of the adhesive, but temporary bonding is performed at a pressure of 0.1 to 3 MPa, and heat curing time is in the range of 5 seconds to 10 minutes at a temperature of 80 to 180 ° C. Just choose.
  • the use of a heated crimping roll is preferred because it allows simultaneous crimping (temporary bonding) and heating, and eliminates internal voids at the same time.
  • a coating method such as roll coating, spin coating, screen printing, or spray coating, or a printing method can be used depending on the material.
  • solid sealing is a form in which there is no space between the sealing member and the organic EL element substrate and the resin is covered with a cured resin.
  • the sealing member include metals such as stainless steel, aluminum and magnesium alloys, polyethylene terephthalate, polycarbonate, polystyrene, nylon, plastics such as polyvinyl chloride, and composites thereof, glass, and the like.
  • a laminate of gas barrier layers such as aluminum, aluminum oxide, silicon oxide, and silicon nitride can be used as in the case of a resin substrate.
  • the gas barrier layer can be formed by sputtering, vapor deposition or the like on both surfaces or one surface of the sealing member before molding the sealing member, or may be formed on both surfaces or one surface of the sealing member after sealing by a similar method.
  • the oxygen permeability is 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less
  • the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) is 1 ⁇ It is preferably 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less.
  • the sealing member may be a film laminated with a metal foil such as aluminum.
  • a generally used laminating machine can be used.
  • the adhesive polyurethane-based, polyester-based, epoxy-based, acrylic-based adhesives and the like can be used. You may use a hardening
  • a hot melt lamination method, an extrusion lamination method and a coextrusion lamination method can also be used, but a dry lamination method is preferred.
  • the metal foil is formed by sputtering or vapor deposition and is formed from a fluid electrode material such as a conductive paste, it may be created by a method of forming a metal foil on a polymer film as a base. Good.
  • a protective film or a protective plate may be provided outside the sealing film on the side facing the support substrate with the organic functional layer interposed therebetween or on the outer side of the sealing film.
  • the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate.
  • the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
  • a light extraction member between the flexible support substrate and the anode, or at any location on the light emission side from the flexible support substrate.
  • the light extraction member include a prism sheet, a lens sheet, and a diffusion sheet.
  • a diffraction grating or a diffusion structure introduced into an interface or any medium that causes total reflection can be used.
  • an organic electroluminescence element that emits light from a substrate
  • a part of the light emitted from the light emitting layer causes total reflection at the interface between the substrate and air, causing a problem of loss of light.
  • prismatic or lens-like processing is applied to the surface of the substrate, or prism sheets, lens sheets, and diffusion sheets are affixed to the surface of the substrate, thereby suppressing total reflection and light extraction efficiency.
  • prismatic or lens-like processing is applied to the surface of the substrate, or prism sheets, lens sheets, and diffusion sheets are affixed to the surface of the substrate, thereby suppressing total reflection and light extraction efficiency.
  • a method of introducing a diffraction grating or a method of introducing a diffusion structure in an interface or any medium that causes total reflection is known.
  • Method for Manufacturing Organic EL Element 100 As an example of the method for producing an organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
  • a desired electrode material for example, a thin film made of an anode material is formed on a suitable substrate by a thin film forming method such as vapor deposition or sputtering so as to have a thickness of 1 ⁇ m or less, preferably 10 to 200 nm.
  • An anode is produced.
  • a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an organic functional layer (organic compound thin film) of an electron injection layer, which are organic EL element materials, are formed thereon.
  • the process of forming the organic functional layer mainly includes (I) a step of coating and laminating the coating liquid constituting the organic functional layer on the anode of the support substrate; and (ii) a step of drying the coating liquid after coating and laminating; Consists of.
  • the light emitting layer forming method (coating film forming method) is as described above.
  • a vapor deposition method for example, spin coating method, casting method, die coating method, blade coating method, roll coating method, ink jet method, printing method, spray coating.
  • Method, curtain coating method, LB method Liangmuir Brodgett method and the like can be used
  • at least the light emitting layer of the present invention is preferably formed by a wet process.
  • a wet process in the present invention from the viewpoint that a homogeneous film is easily obtained and pinholes are difficult to be generated, among others, a spin coating method, a casting method, Film formation by a coating method such as a die coating method, a blade coating method, a roll coating method, or an ink jet method is preferable.
  • liquid medium for dissolving or dispersing the organic EL material according to the present invention examples include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene.
  • Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane
  • organic solvents such as dimethylformamide (DMF) and dimethylsulfoxide (DMSO) can be used.
  • the preparation step for dissolving or dispersing the organic EL material according to the present invention and the coating process until coating on the base material are preferably performed under an inert gas atmosphere. Since the film can be formed without degrading the performance of the organic EL element even if it is not carried out in step 1, it may not necessarily be carried out in an inert gas atmosphere. In this case, the manufacturing cost can be suppressed, which is more preferable.
  • the coated and laminated organic functional layer is dried.
  • drying refers to a reduction to 0.2% or less when the solvent content of the film immediately after coating is 100%.
  • those generally used can be used, and examples thereof include reduced pressure or pressure drying, heat drying, air drying, IR drying, and electromagnetic wave drying.
  • heat drying is preferable, the temperature is equal to or higher than the boiling point of the solvent having the lowest boiling point in the organic functional layer coating solvent, and the temperature is lower than (Tg + 20) ° C. of the material having the lowest Tg among the Tg of the organic functional layer material. Most preferably, it is held at In the present invention, more specifically, it is preferable to hold and dry at 80 ° C.
  • the atmosphere when drying the coating liquid after coating / lamination is preferably an atmosphere having a volume concentration of a gas other than the inert gas of 200 ppm or less, but it is not necessarily in an inert gas atmosphere as in the liquid preparation coating process. It may not be necessary. In this case, the manufacturing cost can be suppressed, which is more preferable.
  • the inert gas is preferably a rare gas such as nitrogen gas and argon gas, and most preferably nitrogen gas in terms of production cost.
  • the coating / laminating and drying steps of these layers may be single wafer manufacturing or line manufacturing. Further, the drying process may be performed while being conveyed on the line, but from the viewpoint of productivity, it may be deposited or rolled in a non-contact manner in a roll form.
  • a thin film made of a cathode material is formed thereon by a method such as vapor deposition or sputtering so as to have a film thickness of 1 ⁇ m or less, preferably in the range of 50 nm to 200 nm.
  • a desired organic EL element can be obtained.
  • the organic EL element can be produced by adhering the close-sealing or sealing member to the electrode and the support substrate with an adhesive.
  • the organic EL element of the present invention can be used as a display device, a display, and various light emission sources.
  • light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, and light sources for optical sensors.
  • it can be used in a wide range of applications such as general household appliances that require a display device, but it can be used effectively as a backlight for a liquid crystal display device combined with a color filter, and as a light source for illumination. it can.
  • patterning may be performed by a metal mask, an ink jet printing method, or the like as needed during film formation. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
  • Example Sample 1 Production of Gas Barrier Flexible Film First of polyethylene naphthalate film (Teijin DuPont film, hereinafter abbreviated as PEN) as the flexible film.
  • An inorganic gas barrier film made of SiOx is continuously formed on the flexible film on the entire surface on the electrode forming side using an atmospheric pressure plasma discharge treatment apparatus having the structure described in JP-A-2004-68143.
  • first electrode layer 120 nm thick ITO (Indium Tin Oxide) film is formed on the prepared gas barrier flexible film by sputtering and patterned by photolithography. An electrode layer (anode) was formed. The pattern was such that the light emission area was 50 mm square.
  • ITO Indium Tin Oxide
  • the patterned ITO substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (abbreviated as PEDOT / PSS, manufactured by Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds.
  • the film was formed by spin coating and held at 200 ° C. for 1 hour to provide a hole injection layer having a thickness of 30 nm.
  • a light-emitting layer composition having the following composition was formed by a spin coating method at 1500 rpm for 30 seconds and held at 120 ° C. for 30 minutes to form a light-emitting layer having a thickness of 40 nm. .
  • ⁇ Light emitting layer composition> Host material ... Exemplified compound a-6 13.95 parts by mass Dopant material ... Exemplified compound D-24: D-25: D-26: D-51: D-55 equimolar mixture 2.45 parts by mass Dopant material ... Exemplified compound D-1 0.025 parts by mass Dopant material ... Exemplary compound D-10 0.025 parts by mass Solvent species ...
  • Toluene: isopropyl acetate 1: 1 2,000 parts by mass
  • the coating film was kept at 30 ° C., and after 5 seconds (within 5 seconds) from the end of the application of the light emitting layer composition, the coating film was dried by applying dry air to the coating film.
  • a sealing member a flexible aluminum foil (made by Toyo Aluminum Co., Ltd.) having a thickness of 30 ⁇ m, a polyethylene terephthalate (PET) film (12 ⁇ m thickness) and an adhesive for dry lamination (two-component reaction type urethane) (Adhesive layer thickness 1.5 ⁇ m) was used.
  • a thermosetting adhesive was uniformly applied to the aluminum surface with a thickness of 20 ⁇ m along the adhesive surface (shiny surface) of the aluminum foil using a dispenser. This was dried under a vacuum of 100 Pa or less for 12 hours. Furthermore, it moved to a nitrogen atmosphere with a dew point temperature of ⁇ 80 ° C.
  • thermosetting adhesive an epoxy adhesive mixed with the following (A) to (C) was used.
  • DGEBA Bisphenol A diglycidyl ether
  • DIY Dicyandiamide
  • C Epoxy adduct curing accelerator
  • Example sample 1 (organic EL element) was manufactured by closely sealing at a temperature of 120 ° C., a pressure of 0.5 MPa, and an apparatus speed of 0.3 m / min.
  • Example Sample 1 Production of Example Samples 2 to 7
  • the application environment of the light-emitting layer (application temperature, time from the end of application to the start of drying, solvent type of application liquid) is shown in Table 1, respectively The environment was changed. Other than that was the same as Example Sample 1.
  • Example Sample 8 In the production of Example Sample 1, the application environment of the light emitting layer (application temperature, time from the end of application to the start of drying, solvent type of the application liquid) are shown in Table 1, respectively. And the host material was an equal mass mixture of a-1, a-6, and a-41. Other than that was the same as Example Sample 1.
  • Example Sample 9 (4) Production of Comparative Sample 9
  • the application environment of the light emitting layer was changed to the environment shown in Table 1. Other than that was the same as Example Sample 1.
  • Example Samples 1 to 8 and Comparative Samples 9 to 13 were subjected to (1) measurement of the film density of the light emitting layer and the evaluations (2) to (4).
  • Example Samples 1 to 8 and Comparative Samples 9 to 13 were measured by the measurement method described above. The results are shown in Table 2.
  • ⁇ HIL represents the film density of the hole injection layer
  • ⁇ HT represents the film density of the hole transport layer
  • ⁇ EM represents the film density of the light emitting layer
  • ⁇ ET represents the film of the electron transport layer. Each density is shown.
  • ⁇ (EM-HT) is the difference between the film density of the light emitting layer and the film density of the hole transport layer ( ⁇ EM ⁇ HT)
  • ⁇ (EM-ET) is the film density of the light emitting layer and the electron ( ⁇ EM ⁇ ET), which is the difference from the film density of the transport layer, is shown.
  • Example Samples 1 to 8 have good results in each evaluation. there were. From the above, in order to improve the light emission efficiency, the light emission lifetime, and the suppression of luminance unevenness, both of the conditional expressions (i) and (ii) are satisfied ( ⁇ (EM ⁇ HT) and ⁇ (EM ⁇ It can be seen that it is useful to set both the value of (ET) to 0.03 or more.
  • the present invention can be particularly suitably used for improving luminous efficiency and luminous lifetime and suppressing occurrence of luminance unevenness.

Abstract

An organic EL element is provided with: a support substrate (1); a positive electrode (2) and a negative electrode (8) which are formed on the support substrate (1); a light-emitting layer (5) formed between the positive electrode (2) and the negative electrode (8); a hole transport layer (4) formed between the light-emitting layer (5) and the positive electrode (2); and an electron transport layer (6) formed between the light-emitting layer (5) and the negative electrode (8). Both of the following conditional equations (i) and (ii) are satisfied: (i) Δρ(EM-HT)=(ρEM-ρHT)≥0.03 and (ii) Δρ(EM-ET)=(ρEM-ρET)≥0.03 (wherein ρEM represents the film density of the light-emitting layer (5), ρHT represents the film density of the hole transport layer (4), ρET represents the film density of the electron transport layer (6), Δρ(EM-HT) represents the difference between the film density of the light-emitting layer (5) and the film density of the hole transport layer (4), and Δρ(EM-ET) represents the difference between the film density of the light-emitting layer (5) and the film density of the electron transport layer (6)).

Description

有機エレクトロルミネッセンス素子ならびに表示装置および照明装置ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE
 本発明は有機エレクトロルミネッセンス素子に関し、詳しくは、発光効率、発光寿命および輝度ムラに優れた有機エレクトロルミネッセンス素子ならびにそれを用いた表示装置および照明装置に関する。 The present invention relates to an organic electroluminescence element, and more particularly to an organic electroluminescence element excellent in luminous efficiency, luminous lifetime and luminance unevenness, and a display device and an illumination device using the same.
 近年、有機物質を使用した有機エレクトロルミネッセンス素子(以下において、適宜、「有機EL素子」と略称する。)は、固体発光型の安価な大面積フルカラー表示素子や書き込み光源アレイとしての用途が有望視されており、研究開発が活発に進められている。
 有機EL素子は、フィルム上に形成された1対の陽極と陰極との間に、有機発光物質を含有する厚さ僅か0.1μm程度の有機機能層(単層部又は多層部)で構成する薄膜型の全固体素子である。このような有機EL素子に2~20V程度の比較的低い電圧を印加すると、有機化合物層に陰極から電子が注入され、陽極から正孔が注入される。この電子と正孔とが発光層において再結合し、エネルギー準位が伝導帯から価電子帯に戻る際にエネルギーを光として放出することにより発光が得られることが知られており、次世代の平面ディスプレイや照明として期待されている技術である。
In recent years, organic electroluminescence elements using organic substances (hereinafter, abbreviated as “organic EL elements” where appropriate) are promising for use as solid light-emitting inexpensive large-area full-color display elements and writing light source arrays. Research and development is actively underway.
The organic EL element is composed of an organic functional layer (single layer portion or multilayer portion) having a thickness of only about 0.1 μm containing an organic light emitting material between a pair of anode and cathode formed on a film. It is a thin film type all solid state device. When a relatively low voltage of about 2 to 20 V is applied to such an organic EL element, electrons are injected from the cathode and holes are injected from the anode into the organic compound layer. It is known that emission is obtained by releasing energy as light when the electrons and holes recombine in the light emitting layer and the energy level returns from the conduction band to the valence band. This technology is expected as a flat display and lighting.
 さらに、最近発見されたリン光発光を利用する有機EL素子では、以前の蛍光発光を利用するそれに比べ、原理的に約4倍の発光効率が実現可能であることから、その材料開発を始めとし、有機機能層の層構成や電極の研究開発が世界中で行われている。特に、地球温暖化防止策の1つとして、人類のエネルギー消費の多くを占める照明器具への応用が検討されはじめ、従来の照明器具に置き換わりうる白色発光パネルの実用化に向けて、性能向上やコストダウンの試みが盛んになっている。
 これら有機EL素子の製造方法としては、真空蒸着法、ウェットプロセス(塗布法)等がある。これら製造方法のなかでも、真空プロセスを必要とせず、連続生産が簡便であり生産速度を早くできるという理由で、近年はウェットプロセス(スピンコート法、キャスト法、インクジェット法、スプレー法、印刷法、スロット型コータ法)における製造方法が注目されている(たとえば特許文献1参照)。
In addition, recently discovered organic EL devices that use phosphorescence can realize a luminous efficiency that is approximately four times that of previous methods that use fluorescence. Research and development of organic functional layer layers and electrodes are conducted all over the world. In particular, as one of the measures to prevent global warming, application to lighting fixtures that occupy much of human energy consumption has begun to be studied. There are many attempts to reduce costs.
As a manufacturing method of these organic EL elements, there are a vacuum deposition method, a wet process (coating method) and the like. Among these manufacturing methods, the wet process (spin coating method, casting method, ink jet method, spray method, printing method, A manufacturing method in the slot type coater method is drawing attention (see, for example, Patent Document 1).
 一般的な有機EL素子では、基板上に対し、ITO(Indium Tin Oxide)からなる陽極と、水系溶媒で作製された膜(正孔注入層)と、発光層と、LiF等のアルカリ金属やアルカリ土類金属を含む電子注入層と、Al等の金属薄膜からなる陰極とがこの順で積層され形成されている。
 このような系において、塗布により作製された有機EL層(発光層)では、発光層の周辺層から化学的に不安定なLi原子やイオン、材料に含まれる不純物、さらには塗布プロセスで使用した残存溶媒が拡散し、それは特に有機EL素子自体の発光効率の低下や発光寿命の短縮を引き起こす原因となっている。また、塗布プロセスで作製された発光層は、蒸着プロセスを用いて形成された発光層に比べて膜厚が不均一であり、輝度ムラが発生しやすいといった課題もある。
 これらの原因として、塗布プロセスを用いて形成された膜は、蒸着プロセスを用いて形成された膜に比べて粗膜であり、周辺層からの拡散物質の影響を受けやすいと考えられる。膜作製においても、塗布液の物性や、塗布工程また乾燥工程の影響を受けてしまい、特に大面積で均一な膜を作製することは大変困難である。
In a general organic EL element, an anode made of ITO (Indium Tin Oxide), a film made with an aqueous solvent (hole injection layer), a light emitting layer, an alkali metal such as LiF, and an alkali are formed on a substrate. An electron injection layer containing an earth metal and a cathode made of a metal thin film such as Al are laminated in this order.
In such a system, the organic EL layer (light-emitting layer) produced by coating was used in the coating process from Li atoms and ions that were chemically unstable from the peripheral layer of the light-emitting layer, impurities contained in the material, and further. The residual solvent diffuses, which causes a decrease in the light emission efficiency of the organic EL element itself and a shortened light emission lifetime. In addition, the light emitting layer manufactured by the coating process has a problem that the film thickness is not uniform compared to the light emitting layer formed by using the vapor deposition process, and luminance unevenness is likely to occur.
As these causes, it is considered that the film formed using the coating process is a coarse film as compared with the film formed using the vapor deposition process, and is easily affected by the diffusion material from the peripheral layer. Also in the film production, it is affected by the physical properties of the coating liquid, the coating process and the drying process, and it is very difficult to produce a uniform film particularly in a large area.
 このような課題に対し、特許文献2には、膜の密度を高める方法が開示されている。詳しくは、有機EL素子全体をラミネート材で圧縮することで膜を均一に加圧し膜密度を上げ、塗布で作成した粗膜を蒸着レベルに上げる方法が開示されている。しかし、特許文献2の方法では、塗布・乾燥後の膜に負荷をかけることになり、リーク発生の原因になりやすく、また、残存溶媒に対しては効果が小さい。
 他方、特許文献3には、輝度ムラを抑制する方法が開示されている。詳しくは隔壁を設け、インクジェット方式/ノズル塗布方式で膜面均一化による輝度ムラ低減させる方法が開示されている(特許文献3)。しかし、特許文献3の方法では、大面積に対しては輝度ムラの抑制効果が不十分である。
For such a problem, Patent Document 2 discloses a method for increasing the density of a film. Specifically, a method is disclosed in which the entire organic EL element is compressed with a laminate material to uniformly pressurize the film to increase the film density and raise the rough film formed by coating to the vapor deposition level. However, the method of Patent Document 2 places a load on the coated / dried film, tends to cause leaks, and has little effect on the residual solvent.
On the other hand, Patent Document 3 discloses a method of suppressing luminance unevenness. More specifically, a method of providing a partition and reducing luminance unevenness by making the film surface uniform by an ink jet method / nozzle coating method is disclosed (Patent Document 3). However, in the method of Patent Document 3, the effect of suppressing luminance unevenness is insufficient for a large area.
特開平6-33048号公報JP-A-6-33048 特開2007-128799公報JP 2007-128799 A 特開2011-60518公報JP 2011-60518 A
 上記のような課題がある一方で、化学的に不安定な材料によって構成される電子注入層の膜厚を5~10nm程度まで厚くすると、有機EL素子の寿命、即ち信頼性を低下させてしまうという問題が生じてしまう。
 塗布法で形成された有機EL層(発光層)の他方の面側には、一般的に、ITO(Indium Tin Oxide)等の透明導電材料で形成された陽極と正孔注入層とが形成される。塗布法を用いて形成された発光層は粗膜であるため、陽極から発光層に拡散したインジウム原子によって発光層の寿命が低下してしまう場合もある。
 このように、塗布法を用いて形成された発光層が粗膜であることを主たる要因として、有機EL素子に様々な不具合が生じる。
On the other hand, when the thickness of the electron injection layer composed of a chemically unstable material is increased to about 5 to 10 nm, the lifetime of the organic EL element, that is, the reliability is lowered. The problem will arise.
On the other surface side of the organic EL layer (light emitting layer) formed by the coating method, an anode and a hole injection layer made of a transparent conductive material such as ITO (Indium Tin Oxide) are generally formed. The Since the light emitting layer formed using the coating method is a rough film, the lifetime of the light emitting layer may be reduced by indium atoms diffused from the anode to the light emitting layer.
As described above, various problems occur in the organic EL element mainly due to the fact that the light emitting layer formed using the coating method is a rough film.
 したがって、本発明の主な目的は、発光効率、発光寿命および輝度ムラに優れた有機エレクトロルミネッセンス素子を提供することにあり、本発明の他の目的は当該有機エレクトロルミネッセンス素子を用いた表示装置および照明装置を提供することにある。 Accordingly, a main object of the present invention is to provide an organic electroluminescence element excellent in luminous efficiency, light emission lifetime and luminance unevenness, and another object of the present invention is a display device using the organic electroluminescence element and The object is to provide a lighting device.
 上記課題を解決するため本発明によれば、
 基板と、
 前記基板上に形成された陽極および陰極と、
 前記陽極と前記陰極との間に形成された発光層と、
 前記発光層と前記陽極との間に形成された正孔輸送層と、
 前記発光層と前記陰極との間に形成された電子輸送層と、
 を備える有機エレクトロルミネッセンス素子において、
 前記発光層の膜密度をρEMと、前記正孔輸送層の膜密度をρHTと、前記電子輸送層の膜密度をρETと、前記発光層の膜密度と前記正孔輸送層の膜密度との差をΔρ(EM-HT)と、前記発光層の膜密度と前記電子輸送層の膜密度との差をΔρ(EM-ET)とした場合に、条件式(i),(ii)の両方を満たしていることを特徴とする有機エレクトロルミネッセンス素子が提供される。
   Δρ(EM-HT)=(ρEM-ρHT)≧0.03 … (i)
   Δρ(EM-ET)=(ρEM-ρET)≧0.03 … (ii)
In order to solve the above problems, according to the present invention,
A substrate,
An anode and a cathode formed on the substrate;
A light emitting layer formed between the anode and the cathode;
A hole transport layer formed between the light emitting layer and the anode;
An electron transport layer formed between the light emitting layer and the cathode;
In an organic electroluminescence device comprising:
The film density of the light emitting layer is ρEM, the film density of the hole transport layer is ρHT, the film density of the electron transport layer is ρET, and the film density of the light emitting layer and the film density of the hole transport layer are When the difference between Δρ (EM−HT) and the difference between the film density of the light emitting layer and the film density of the electron transport layer is Δρ (EM−ET), both conditional expressions (i) and (ii) An organic electroluminescence device characterized by satisfying the above is provided.
Δρ (EM−HT) = (ρEM−ρHT) ≧ 0.03 (i)
Δρ (EM−ET) = (ρEM−ρET) ≧ 0.03 (ii)
 本発明によれば、発光効率と発光寿命とを向上させ、輝度ムラの発生を抑制することができる。 According to the present invention, it is possible to improve the light emission efficiency and the light emission lifetime, and to suppress the occurrence of luminance unevenness.
有機エレクトロルミネッセンス素子の構成の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of a structure of an organic electroluminescent element.
 以下、図面を参照しながら本発明の好ましい実施形態について説明する。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
《有機EL素子の構成》
 図1に示すとおり、本発明の好ましい実施形態にかかる有機エレクトロルミネッセンス素子100(以下、有機EL素子ともいう)は、可撓性支持基板1を有している。可撓性支持基板1上には陽極2が形成され、陽極2上には有機機能層20が形成され、有機機能層20上には陰極8が形成されている。
 有機機能層20とは、陽極2と陰極8との間に設けられている有機エレクトロルミネッセンス素子100を構成する各層をいう。
 有機機能層20には、例えば、正孔注入層3、正孔輸送層4、発光層5、電子輸送層6、電子注入層7が含まれ、そのほかに正孔ブロック層や電子ブロック層等が含まれてもよい。
 可撓性支持基板1上の陽極2,有機機能層20,陰極8は封止接着剤9を介して可撓性封止部材10によって封止されている。
<< Configuration of organic EL element >>
As shown in FIG. 1, an organic electroluminescence element 100 (hereinafter also referred to as an organic EL element) according to a preferred embodiment of the present invention has a flexible support substrate 1. An anode 2 is formed on the flexible support substrate 1, an organic functional layer 20 is formed on the anode 2, and a cathode 8 is formed on the organic functional layer 20.
The organic functional layer 20 refers to each layer constituting the organic electroluminescence element 100 provided between the anode 2 and the cathode 8.
The organic functional layer 20 includes, for example, a hole injection layer 3, a hole transport layer 4, a light emitting layer 5, an electron transport layer 6, an electron injection layer 7, and in addition, a hole block layer, an electron block layer, and the like. May be included.
The anode 2, the organic functional layer 20, and the cathode 8 on the flexible support substrate 1 are sealed with a flexible sealing member 10 through a sealing adhesive 9.
 なお、有機エレクトロルミネッセンス素子100のこれらの層構造(図1参照)は単に好ましい具体例を示したものであり、本発明はこれらに限定されない。たとえば、本発明に係る有機EL素子100は(i)~(viii)の層構造を有していてもよい。
(i)可撓性支持基板/陽極/発光層/電子輸送層/陰極/熱伝導層/封止用接着剤/封止部材
(ii)可撓性支持基板/陽極/正孔輸送層/発光層/電子輸送層/陰極/熱伝導層/封止用接着剤/封止部材
(iii)可撓性支持基板/陽極/正孔輸送層/発光層/正孔ブロック層/電子輸送層/陰極/熱伝導層/封止用接着剤/封止部材
(iv)可撓性支持基板/陽極/正孔輸送層/発光層/正孔ブロック層/電子輸送層/陰極バッファー層/陰極/熱伝導層/封止用接着剤/封止部材
(v)可撓性支持基板/陽極/陽極バッファー層/正孔輸送層/発光層/正孔ブロック層/電子輸送層/陰極バッファー層/陰極/熱伝導層/封止用接着剤/封止部材
(vi)ガラス支持体/陽極/正孔注入層/発光層/電子注入層/陰極/封止部材
(vii)ガラス支持体/陽極/正孔注入層/正孔輸送層/発光層/電子注入層/陰極/封止部材
(viii)ガラス支持体/陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極/封止部材
In addition, these layer structures (refer FIG. 1) of the organic electroluminescent element 100 show only the preferable specific example, and this invention is not limited to these. For example, the organic EL device 100 according to the present invention may have a layer structure of (i) to (viii).
(I) Flexible support substrate / anode / light emitting layer / electron transport layer / cathode / thermal conductive layer / sealing adhesive / sealing member (ii) flexible support substrate / anode / hole transport layer / light emission Layer / electron transport layer / cathode / heat conducting layer / sealing adhesive / sealing member (iii) flexible support substrate / anode / hole transport layer / light emitting layer / hole block layer / electron transport layer / cathode / Heat conduction layer / adhesive for sealing / sealing member (iv) flexible support substrate / anode / hole transport layer / light emitting layer / hole block layer / electron transport layer / cathode buffer layer / cathode / heat conduction Layer / adhesive for sealing / sealing member (v) flexible support substrate / anode / anode buffer layer / hole transport layer / light emitting layer / hole block layer / electron transport layer / cathode buffer layer / cathode / heat Conductive layer / adhesive for sealing / sealing member (vi) glass support / anode / hole injection layer / light emitting layer / electron injection layer / cathode / sealing member (v i) Glass support / anode / hole injection layer / hole transport layer / light emitting layer / electron injection layer / cathode / sealing member (viii) Glass support / anode / hole injection layer / hole transport layer / light emission Layer / electron transport layer / electron injection layer / cathode / sealing member
《有機EL素子の有機機能層20》
 次いで、本発明の有機EL素子を構成する有機機能層の詳細について説明する。
(1)注入層:正孔注入層3、電子注入層7
 本発明の有機EL素子においては、注入層は必要に応じて設けることができる。注入層としては電子注入層と正孔注入層があり、上記の如く陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。
 本発明でいう注入層とは、駆動電圧低下や発光輝度向上のために電極と有機機能層間に設けられる層で、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層と電子注入層とがある。
 正孔注入層は、例えば、特開平9-45479号公報、同9-260062号公報、同8-288069号公報等にもその詳細が記載されており、正孔注入層に適用可能な正孔注入材料としては、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体等を含むポリマーやアニリン系共重合体、ポリアリールアルカン誘導体、または導電性ポリマーが挙げられ、好ましくはポリチオフェン誘導体、ポリアニリン誘導体、ポリピロール誘導体であり、さらに好ましくはポリチオフェン誘導体である。
 電子注入層は、例えば、特開平6-325871号公報、同9-17574号公報、同10-74586号公報等にもその詳細が記載されており、具体的には、ストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。本発明においては、上記バッファー層(注入層)はごく薄い膜であることが望ましく、フッ化カリウム、フッ化ナトリウムが好ましい。その膜厚は0.1nm~5μm程度、好ましくは0.1~100nm、さらに好ましくは0.5~10nm、最も好ましくは0.5~4nmである。
<< Organic functional layer 20 of organic EL element >>
Subsequently, the detail of the organic functional layer which comprises the organic EL element of this invention is demonstrated.
(1) Injection layer: hole injection layer 3, electron injection layer 7
In the organic EL device of the present invention, the injection layer can be provided as necessary. The injection layer includes an electron injection layer and a hole injection layer, and may be present between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer as described above.
The injection layer referred to in the present invention is a layer provided between the electrode and the organic functional layer in order to lower the driving voltage and improve the light emission luminance. “The organic EL element and its industrialization front line (November 30, 1998, NT. 2) Chapter 2 “Electrode Materials” (pages 123 to 166) of “Part 2” of S. Co., Ltd.) and includes a hole injection layer and an electron injection layer.
The details of the hole injection layer are described, for example, in JP-A-9-45479, JP-A-9-260062, and JP-A-8-288069. Injection materials include triazole derivatives, oxadiazole derivatives, imidazole derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives. , Polymers containing silazane derivatives, aniline copolymers, polyarylalkane derivatives, or conductive polymers, preferably polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, more preferably It is a thiophene derivative.
The details of the electron injection layer are described in, for example, JP-A-6-325871, JP-A-9-17574, and JP-A-10-74586, and specific examples thereof include strontium and aluminum. A metal buffer layer, an alkali metal compound buffer layer typified by lithium fluoride, an alkaline earth metal compound buffer layer typified by magnesium fluoride, and an oxide buffer layer typified by aluminum oxide. In the present invention, the buffer layer (injection layer) is desirably a very thin film, and potassium fluoride and sodium fluoride are preferable. The film thickness is about 0.1 nm to 5 μm, preferably 0.1 to 100 nm, more preferably 0.5 to 10 nm, and most preferably 0.5 to 4 nm.
(2)正孔輸送層4
 正孔輸送層を構成する正孔輸送材料としては、上記正孔注入層で適用するのと同様の化合物を使用することができるが、さらには、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。
 芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′-テトラフェニル-4,4′-ジアミノフェニル;N,N′-ジフェニル-N,N′-ビス(3-メチルフェニル)-〔1,1′-ビフェニル〕-4,4′-ジアミン(TPD);2,2-ビス(4-ジ-p-トリルアミノフェニル)プロパン;1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン;N,N,N′,N′-テトラ-p-トリル-4,4′-ジアミノビフェニル;1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン;ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン;ビス(4-ジ-p-トリルアミノフェニル)フェニルメタン;N,N′-ジフェニル-N,N′-ジ(4-メトキシフェニル)-4,4′-ジアミノビフェニル;N,N,N′,N′-テトラフェニル-4,4′-ジアミノジフェニルエーテル;4,4′-ビス(ジフェニルアミノ)クオードリフェニル;N,N,N-トリ(p-トリル)アミン;4-(ジ-p-トリルアミノ)-4′-〔4-(ジ-p-トリルアミノ)スチリル〕スチルベン;4-N,N-ジフェニルアミノ-(2-ジフェニルビニル)ベンゼン;3-メトキシ-4′-N,N-ジフェニルアミノスチルベンゼン;N-フェニルカルバゾール、さらには、米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′-ビス〔N-(1-ナフチル)-N-フェニルアミノ〕ビフェニル(NPD)、特開平4-308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″-トリス〔N-(3-メチルフェニル)-N-フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。
 さらに、これらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。また、p型-Si、p型-SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。
 また、特開平4-297076号公報、特開2000-196140号公報、特開2001-102175号公報、J.Appl.Phys.,95,5773(2004)、特開平11-251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)、特表2003-519432号公報に記載されているような、いわゆるp型半導体的性質を有するとされる正孔輸送材料を用いることもできる。
 正孔輸送層は、上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。正孔輸送層の膜厚については、特に制限はないが、通常は5nm~5μm程度、好ましくは5~200nmである。この正孔輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。
(2) Hole transport layer 4
As the hole transport material constituting the hole transport layer, the same compounds as those applied in the hole injection layer can be used, and further, porphyrin compounds, aromatic tertiary amine compounds, and styryl. It is preferable to use an amine compound, particularly an aromatic tertiary amine compound.
Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' - (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4′-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and two more described in US Pat. No. 5,061,569 Having a condensed aromatic ring of, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-30 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 688 are linked in a starburst type ( MTDATA) and the like.
Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. , 95, 5773 (2004), JP-A-11-251067, J. MoI. Huang et. al. It is also possible to use a hole transport material that has a so-called p-type semiconducting property as described in a published document (Applied Physics Letters 80 (2002), p. 139) and Japanese translations of PCT publication No. 2003-519432. it can.
The hole transport layer is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Can do. The thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 μm, preferably 5 to 200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.
 以下、本発明の有機EL素子の正孔輸送材料に用いられる化合物の好ましい具体例((1)~(60))を挙げるが、本発明はこれらに限定されない。 Hereinafter, preferred specific examples ((1) to (60)) of compounds used for the hole transport material of the organic EL device of the present invention will be given, but the present invention is not limited thereto.
Figure JPOXMLDOC01-appb-C000001
 
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Figure JPOXMLDOC01-appb-C000002
 
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Figure JPOXMLDOC01-appb-C000003
 
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Figure JPOXMLDOC01-appb-C000004
 
Figure JPOXMLDOC01-appb-C000005
 
Figure JPOXMLDOC01-appb-C000005
 
   
 なお、上記例示化合物に記載のnは重合度を表し、重量平均分子量が50,000~200,000の範囲となる整数を表す。重量平均分子量がこの範囲未満では、溶媒への溶解性の高さから製膜時に他の層と混合する懸念がある。また製膜できたとしても、低い分子量では発光効率が上がらない。重量平均分子量がこの範囲より大きい場合は、合成、精製の難しさにより問題が生じる。分子量分布が大きくなると共に、不純物の残存量も増加するため、有機EL素子の発光効率、電圧、寿命は悪化する。
 これらの高分子化合物は、Makromol.Chem.,193,909頁(1992)等に記載の公知の方法で合成することができる。
Note that n described in the above exemplary compounds represents the degree of polymerization and represents an integer having a weight average molecular weight in the range of 50,000 to 200,000. If the weight average molecular weight is less than this range, there is a concern of mixing with other layers during film formation due to the high solubility in the solvent. Even if a film can be formed, the light emission efficiency does not increase at a low molecular weight. When the weight average molecular weight is larger than this range, problems arise due to difficulty in synthesis and purification. Since the molecular weight distribution increases and the residual amount of impurities also increases, the light emission efficiency, voltage, and life of the organic EL element deteriorate.
These polymer compounds are disclosed in Makromol. Chem. , Pages 193, 909 (1992) and the like.
(3)電子輸送層6
 電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔ブロック層も電子輸送層に含まれる。電子輸送層は単層または複数層設けることができる。
 従来、単層の電子輸送層、及び複数層とする場合は発光層に対して陰極側に隣接する電子輸送層に用いられる電子輸送材料(正孔ブロック材料を兼ねる)としては、陰極より注入された電子を発光層に伝達する機能を有していればよく、その材料としては従来公知の化合物の中から任意のものを選択して用いることができ、例えば、フルオレン誘導体、カルバゾール誘導体、アザカルバゾール誘導体、オキサジアゾール誘導体、トリアゾール誘導体、シロール誘導体、ピリジン誘導体、ピリミジン誘導体、8-キノリノール誘導体等の金属錯体等が挙げられる。
 その他、メタルフリーもしくはメタルフタロシアニン、またはそれらの末端がアルキル基やスルホン酸基等で置換されているものも、電子輸送材料として好ましく用いることができる。
 これらの中でもカルバゾール誘導体、アザカルバゾール誘導体、ピリジン誘導体等が本発明では好ましく、アザカルバゾール誘導体であることがより好ましい。
 電子輸送層は、上記電子輸送材料を、例えば、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができ、好ましくは上記電子輸送材料をフッ化アルコール溶剤とを含有する塗布液を用いたウェットプロセスにより形成することができる。
 電子輸送層の膜厚については特に制限はないが、通常は5nm~5μm程度、好ましくは5~200nmである。電子輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。
(3) Electron transport layer 6
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.
Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the cathode side with respect to the light emitting layer is injected from the cathode. As long as it has a function of transmitting electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds. For example, fluorene derivatives, carbazole derivatives, azacarbazole And metal complexes such as derivatives, oxadiazole derivatives, triazole derivatives, silole derivatives, pyridine derivatives, pyrimidine derivatives, 8-quinolinol derivatives, and the like.
In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material.
Among these, a carbazole derivative, an azacarbazole derivative, a pyridine derivative, and the like are preferable in the present invention, and an azacarbazole derivative is more preferable.
The electron transport layer can be formed by thinning the electron transport material by a known method such as a spin coating method, a casting method, a printing method including an ink jet method, an LB method, and the like, preferably The electron transport material can be formed by a wet process using a coating solution containing a fluorinated alcohol solvent.
The thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5 μm, preferably 5 to 200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
 また、不純物をゲスト材料としてドープしたn性の高い電子輸送層を用いることもできる。その例としては、特開平4-297076号公報、同10-270172号公報、特開2000-196140号公報、同2001-102175号公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。
 本発明における電子輸送層には、有機物のアルカリ金属塩を含有することが好ましい。有機物の種類としては特に制限はないが、ギ酸塩、酢酸塩、プロピオン酸、酪酸塩、吉草酸塩、カプロン酸塩、エナント酸塩、カプリル酸塩、シュウ酸塩、マロン酸塩、コハク酸塩、安息香酸塩、フタル酸塩、イソフタル酸塩、テレフタル酸塩、サリチル酸塩、ピルビン酸塩、乳酸塩、リンゴ酸塩、アジピン酸塩、メシル酸塩、トシル酸塩、ベンゼンスルホン酸塩が挙げられ、好ましくはギ酸塩、酢酸塩、プロピオン酸塩、酪酸塩、吉草酸塩、カプロン酸塩、エナント酸塩、カプリル酸塩、シュウ酸塩、マロン酸塩、コハク酸塩、安息香酸塩、より好ましくはギ酸塩、酢酸塩、プロピオン酸塩、酪酸塩等の脂肪族カルボン酸のアルカリ金属塩が好ましく、脂肪族カルボン酸の炭素数が4以下であることが好ましい。最も好ましくは酢酸塩である。
 有機物のアルカリ金属塩のアルカリ金属の種類としては特に制限はないが、Na、K、Csが挙げられ、好ましくはK、Cs、さらに好ましくはCsである。有機物のアルカリ金属塩としては、前記有機物とアルカリ金属の組み合わせが挙げられ、好ましくは、ギ酸Li、ギ酸K、ギ酸Na、ギ酸Cs、酢酸Li、酢酸K、酢酸Na、酢酸Cs、プロピオン酸Li、プロピオン酸Na、プロピオン酸K、プロピオン酸Cs、シュウ酸Li、シュウ酸Na、シュウ酸K、シュウ酸Cs、マロン酸Li、マロン酸Na、マロン酸K、マロン酸Cs、コハク酸Li、コハク酸Na、コハク酸K、コハク酸Cs、安息香酸Li、安息香酸Na、安息香酸K、安息香酸Cs、より好ましくは酢酸Li、酢酸K、酢酸Na、酢酸Cs、最も好ましくは酢酸Csである。
 これらドープ材の含有量は、添加する電子輸送層に対し、好ましくは1.5~35質量%であり、より好ましくは3~25質量%であり、最も好ましくは5~15質量%である。
Alternatively, an electron transport layer with high n property doped with impurities as a guest material can be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
The electron transport layer in the present invention preferably contains an organic alkali metal salt. There are no particular restrictions on the type of organic substance, but formate, acetate, propionic acid, butyrate, valerate, caproate, enanthate, caprylate, oxalate, malonate, succinate Benzoate, phthalate, isophthalate, terephthalate, salicylate, pyruvate, lactate, malate, adipate, mesylate, tosylate, benzenesulfonate , Preferably formate, acetate, propionate, butyrate, valerate, caprate, enanthate, caprylate, oxalate, malonate, succinate, benzoate, more preferably Is preferably an alkali metal salt of an aliphatic carboxylic acid such as formate, acetate, propionate or butyrate, and the aliphatic carboxylic acid preferably has 4 or less carbon atoms. Most preferred is acetate.
The type of alkali metal of the alkali metal salt of the organic substance is not particularly limited, and examples thereof include Na, K, and Cs, preferably K, Cs, and more preferably Cs. Examples of the alkali metal salt of the organic substance include a combination of the organic substance and the alkali metal, preferably, formic acid Li, formic acid K, formic acid Na, formic acid Cs, acetic acid Li, acetic acid K, Na acetate, acetic acid Cs, propionic acid Li, Propionic acid Na, propionic acid K, propionic acid Cs, oxalic acid Li, oxalic acid Na, oxalic acid K, oxalic acid Cs, malonic acid Li, malonic acid Na, malonic acid K, malonic acid Cs, succinic acid Li, succinic acid Na, succinic acid K, succinic acid Cs, benzoic acid Li, benzoic acid Na, benzoic acid K, benzoic acid Cs, more preferably Li acetate, K acetate, Na acetate, Cs acetate, most preferably Cs acetate.
The content of these dope materials is preferably 1.5 to 35% by mass, more preferably 3 to 25% by mass, and most preferably 5 to 15% by mass with respect to the electron transport layer to be added.
4)発光層5
 本発明の有機EL素子を構成する発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
 本発明に係る発光層は、含まれる発光材料が前記要件を満たしていれば、その構成には特に制限はない。
 また、同一の発光スペクトルや発光極大波長を有する層が複数層あってもよい。各発光層間には非発光性の中間層を有していることが好ましい。
 本発明における発光層の膜厚の総和は1~100nmの範囲にあることが好ましく、さらに好ましくは、より低い駆動電圧を得ることができることから50nm以下である。なお、本発明でいう発光層の膜厚の総和とは、発光層間に非発光性の中間層が存在する場合には、当該中間層も含む膜厚である。
 個々の発光層の膜厚としては1~50nmの範囲に調整することが好ましい。また個々の発光層は青、緑、赤の各色発光を示しても良く、各発光層膜厚の関係については、特に制限はない。
 本発明においては、各発光層には複数の発光材料を混合してもよく、またリン光発光材料と蛍光発光材料を同一発光層中に混合して用いてもよい。
 本発明においては、発光層の構成として、ホスト化合物、発光材料(発光ドーパント化合物ともいう)を含有し、発光材料より発光させることが好ましい。
4) Light emitting layer 5
The light emitting layer constituting the organic EL device of the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is the light emitting layer. It may be in the layer or the interface between the light emitting layer and the adjacent layer.
The light emitting layer according to the present invention is not particularly limited in its configuration as long as the contained light emitting material satisfies the above requirements.
Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. It is preferable to have a non-light emitting intermediate layer between each light emitting layer.
The total thickness of the light emitting layers in the present invention is preferably in the range of 1 to 100 nm, and more preferably 50 nm or less because a lower driving voltage can be obtained. In addition, the sum total of the film thickness of the light emitting layer as used in this invention is a film thickness also including the said intermediate | middle layer, when a nonluminous intermediate | middle layer exists between light emitting layers.
The film thickness of each light emitting layer is preferably adjusted in the range of 1 to 50 nm. In addition, each light emitting layer may emit light of each color of blue, green, and red, and there is no particular limitation on the relationship between the thickness of each light emitting layer.
In the present invention, a plurality of light emitting materials may be mixed in each light emitting layer, or a phosphorescent light emitting material and a fluorescent light emitting material may be mixed and used in the same light emitting layer.
In the present invention, the structure of the light-emitting layer preferably contains a host compound and a light-emitting material (also referred to as a light-emitting dopant compound) and emits light from the light-emitting material.
(4.1)ホスト化合物
 本発明の有機EL素子の発光層に含有されるホスト化合物としては、室温(25℃)におけるリン光発光のリン光量子収率が0.1未満の化合物が好ましい。さらに好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での体積比が50%以上であることが好ましい。
 ホスト化合物としては、公知のホスト化合物を単独で用いてもよく、または複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、後述する発光材料を複数種用いることで異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。
(4.1) Host compound As the host compound contained in the light emitting layer of the organic EL device of the present invention, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.
As the host compound, known host compounds may be used alone or in combination of two or more. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of luminescent material mentioned later, and can thereby obtain arbitrary luminescent colors.
 また、本発明に用いられる発光ホストとしては、従来公知の低分子化合物でも、繰り返し単位を持つ高分子化合物でもよく、ビニル基やエポキシ基のような重合性基を有する低分子化合物(重合性発光ホスト)でもよいが、高分子材料を用いた場合、精製が難しいことや化合物が溶媒を取り込んで膨潤やゲル化等、溶媒が抜けにくいと思われる現象が起こりやすいので、これを防ぐために分子量は高くない方が好ましく、具体的には塗布時での分子量が2,000以下の材料を用いることが好ましく、塗布時の分子量1,000以下の材料を用いることが更に好ましい。 The light emitting host used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (polymerizable light emission). However, when a polymer material is used, it is difficult to purify, and the phenomenon that the compound is difficult to escape such as swelling and gelation due to incorporation of the solvent is likely to occur. It is preferably not high, and specifically, a material having a molecular weight of 2,000 or less at the time of coating is preferably used, and a material having a molecular weight of 1,000 or less at the time of coating is more preferably used.
 公知のホスト化合物としては、正孔輸送能、電子輸送能を有しつつ、かつ発光の長波長化を防ぎ、なおかつ高Tg(ガラス転移温度)である化合物が好ましい。ここで、ガラス転移点(Tg)とは、DSC(Differential Scanning Colorimetry:示差走査熱量法)を用いて、JIS-K-7121に準拠した方法により求められる値である。
 公知のホスト化合物の具体例としては、以下の文献に記載されている化合物が挙げられる。例えば、特開2001-257076号公報、同2002-308855号公報、同2001-313179号公報、同2002-319491号公報、同2001-357977号公報、同2002-334786号公報、同2002-8860号公報、同2002-334787号公報、同2002-15871号公報、同2002-334788号公報、同2002-43056号公報、同2002-334789号公報、同2002-75645号公報、同2002-338579号公報、同2002-105445号公報、同2002-343568号公報、同2002-141173号公報、同2002-352957号公報、同2002-203683号公報、同2002-363227号公報、同2002-231453号公報、同2003-3165号公報、同2002-234888号公報、同2003-27048号公報、同2002-255934号公報、同2002-260861号公報、同2002-280183号公報、同2002-299060号公報、同2002-302516号公報、同2002-305083号公報、同2002-305084号公報、同2002-308837号公報等が挙げられる。
 本発明に用いられるホスト化合物は、カルバゾール誘導体であることが好ましい。
As the known host compound, a compound having a hole transporting ability and an electron transporting ability, preventing an increase in the wavelength of light emission, and having a high Tg (glass transition temperature) is preferable. Here, the glass transition point (Tg) is a value determined by a method based on JIS-K-7121 using DSC (Differential Scanning Colorimetry).
Specific examples of known host compounds include compounds described in the following documents. For example, Japanese Patent Laid-Open Nos. 2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860 Gazette, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579 No. 2002-105445, No. 2002-343568, No. 2002-141173, No. 2002-352957, No. 2002-203683, No. 2002-363227, No. 2002-231453. No. 2003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060. No. 2002-302516, No. 2002-305083, No. 2002-305084, No. 2002-308837, and the like.
The host compound used in the present invention is preferably a carbazole derivative.
 ホスト化合物は好ましくは一般式(1)で示される化合物が用いられる。 The host compound is preferably a compound represented by the general formula (1).
Figure JPOXMLDOC01-appb-C000007
 
Figure JPOXMLDOC01-appb-C000007
 
 式(1)中、「X」はNR’、O、S、CR’R’’又はSiR’R’’を表す。
 「R’」、「R’’」は各々水素原子又は置換基を表す。
 「Ar」は芳香環を表す。
 「n」は0~8の整数を表す。
In the formula (1), “X” represents NR ′, O, S, CR′R ″ or SiR′R ″.
“R ′” and “R ″” each represent a hydrogen atom or a substituent.
“Ar” represents an aromatic ring.
“N” represents an integer of 0 to 8.
 一般式(1)におけるXにおいて、R’、R’’で各々表される置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、t-ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素環基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4-トリアゾール-1-イル基、1,2,3-トリアゾール-1-イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2-ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2-エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2-エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2-エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2-ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2-ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2-エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2-ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2-エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基又はヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2-ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2-エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2-ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)等が挙げられる。これらの置換基は上記の置換基によって更に置換されていてもよい。これらの置換基は複数が互いに結合して環を形成していてもよい。 In X in the general formula (1), examples of the substituent represented by R ′ and R ″ include an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a t-butyl group, a pentyl group, Hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), cycloalkyl group (for example, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (for example, vinyl group, allyl group, etc.), alkynyl group ( For example, ethynyl group, propargyl group, etc.), aromatic hydrocarbon ring group (aromatic carbocyclic group, aryl group, etc.), for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group , Anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyreth Group, biphenylyl group, etc.), aromatic heterocyclic group (for example, pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4) -Triazol-1-yl group, 1,2,3-triazol-1-yl group, etc.), oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, Benzofuryl group, dibenzofuryl group, benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom) Quinoxalinyl group, pyridazinyl group Triazinyl group, quinazolinyl group, phthalazinyl group, etc.), heterocyclic group (eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, Hexyloxy group, octyloxy group, dodecyloxy group, etc.), cycloalkoxy group (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (eg, Methylthio group, ethylthio group, propylthio group, pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenyl) Thio group, naphthylthio group, etc.), alkoxycarbonyl group (eg, methyloxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (eg, phenyloxy) Carbonyl group, naphthyloxycarbonyl group, etc.), sulfamoyl group (for example, aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecyl) Aminosulfonyl group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, ethyl group) Rubonyl, propylcarbonyl, pentylcarbonyl, cyclohexylcarbonyl, octylcarbonyl, 2-ethylhexylcarbonyl, dodecylcarbonyl, phenylcarbonyl, naphthylcarbonyl, pyridylcarbonyl, etc.), acyloxy groups (eg acetyloxy) Group, ethylcarbonyloxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, propyl) Carbonylamino group, pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group Dodecylcarbonylamino group, phenylcarbonylamino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, aminocarbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexylaminocarbonyl group) Octylaminocarbonyl group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido group, pentyl) Ureido group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminourei Group), sulfinyl group (for example, methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.) ), Alkylsulfonyl groups (eg, methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl groups or heteroarylsulfonyl groups (eg, phenylsulfonyl group) Naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.), amino group (for example, amino group, ethylamino group, dimethylamino group, butylamino group, cyclopente) Luamino group, 2-ethylhexylamino group, dodecylamino group, anilino group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (eg, fluorine atom, chlorine atom, bromine atom etc.), fluorinated hydrocarbon group (eg. , Fluoromethyl group, trifluoromethyl group, pentafluoroethyl group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (for example, trimethylsilyl group, triisopropylsilyl group, triphenylsilyl group) Group, phenyldiethylsilyl group, etc.). These substituents may be further substituted with the above substituents. A plurality of these substituents may be bonded to each other to form a ring.
 中でも、XとしてはNR’又はOが好ましく、また、R’としては、芳香族炭化水素基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基)、又は芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、ピリダジニル基、ピリミジニル基、ピラジニル基、トリアジニル基、イミダゾリル基、ピラゾリル基、チアゾリル基、キナゾリニル基、フタラジニル基等)が特に好ましい。 Among these, X is preferably NR ′ or O, and R ′ is an aromatic hydrocarbon group (also referred to as an aromatic carbocyclic group, an aryl group, etc., for example, a phenyl group, a p-chlorophenyl group, a mesityl group, A tolyl group, a xylyl group, a naphthyl group, an anthryl group, an azulenyl group, an acenaphthenyl group, a fluorenyl group, a phenanthryl group, an indenyl group, a pyrenyl group, a biphenylyl group, or an aromatic heterocyclic group (for example, a furyl group, a thienyl group, a pyridyl group) Group, pyridazinyl group, pyrimidinyl group, pyrazinyl group, triazinyl group, imidazolyl group, pyrazolyl group, thiazolyl group, quinazolinyl group, phthalazinyl group and the like are particularly preferable.
 上記の芳香族炭化水素基、芳香族複素環基は、各々一般式(1)のXにおいて、R’、R’’で各々表される置換基を有してもよい。 The above aromatic hydrocarbon group and aromatic heterocyclic group each may have a substituent represented by R ′ or R ″ in X of the general formula (1).
 一般式(1)において、Arにより表される芳香環としては、芳香族炭化水素環又は芳香族複素環が挙げられる。また、該芳香環は単環でもよく、縮合環でもよく、更に未置換でも、一般式(1)のXにおいて、R’、R’’で各々表される置換基を有してもよい。 In the general formula (1), examples of the aromatic ring represented by Ar include an aromatic hydrocarbon ring and an aromatic heterocyclic ring. The aromatic ring may be a single ring or a condensed ring, and may be unsubstituted or may have a substituent represented by R ′ or R ″ in X of the general formula (1).
 一般式(1)において、Arにより表される芳香族炭化水素環としては、ベンゼン環、ビフェニル環、ナフタレン環、アズレン環、アントラセン環、フェナントレン環、ピレン環、クリセン環、ナフタセン環、トリフェニレン環、o-テルフェニル環、m-テルフェニル環、p-テルフェニル環、アセナフテン環、コロネン環、フルオレン環、フルオラントレン環、ナフタセン環、ペンタセン環、ペリレン環、ペンタフェン環、ピセン環、ピレン環、ピラントレン環、アンスラアントレン環等が挙げられる。これらの環は更に、一般式(a)で表される部分構造のXにおいて、R’、R’’で各々表される置換基を有してもよい。 In the general formula (1), examples of the aromatic hydrocarbon ring represented by Ar include a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring, pyrene ring, Examples include a pyranthrene ring and anthraanthrene ring. These rings may further have substituents represented by R ′ and R ″ in X of the partial structure represented by the general formula (a).
 一般式(1)で表される部分構造において、Arにより表される芳香族複素環としては、例えば、フラン環、ジベンゾフラン環、チオフェン環、オキサゾール環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、ベンゾイミダゾール環、オキサジアゾール環、トリアゾール環、イミダゾール環、ピラゾール環、チアゾール環、インドール環、インダゾール環、ベンゾイミダゾール環、ベンゾチアゾール環、ベンゾオキサゾール環、キノキサリン環、キナゾリン環、シンノリン環、キノリン環、イソキノリン環、フタラジン環、ナフチリジン環、カルバゾール環、カルボリン環、ジアザカルバゾール環(カルボリン環を構成する炭化水素環の炭素原子の一つが更に窒素原子で置換されている環を示す)等が挙げられる。 In the partial structure represented by the general formula (1), examples of the aromatic heterocycle represented by Ar include a furan ring, a dibenzofuran ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, and a pyrimidine ring. , Pyrazine ring, triazine ring, benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, indazole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline Ring, cinnoline ring, quinoline ring, isoquinoline ring, phthalazine ring, naphthyridine ring, carbazole ring, carboline ring, diazacarbazole ring (one of the carbon atoms of the hydrocarbon ring constituting the carboline ring is further substituted with a nitrogen atom) Etc.) And the like.
 これらの環は、更に一般式(1)において、R’、R’’で各々表される置換基を有してもよい。 These rings may further have substituents represented by R ′ and R ″ in the general formula (1).
 上記の中でも、一般式(1)において、Arにより表される芳香環として、好ましく用いられるのは、カルバゾール環、カルボリン環、ジベンゾフラン環、ベンゼン環であり、更に好ましく用いられるのは、カルバゾール環、カルボリン環、ベンゼン環であり、より好ましくは置換基を有するベンゼン環であり、特に好ましくはカルバゾリル基を有するベンゼン環が挙げられる。 Among these, in the general formula (1), the aromatic ring represented by Ar is preferably a carbazole ring, a carboline ring, a dibenzofuran ring, or a benzene ring, and more preferably a carbazole ring, A carboline ring and a benzene ring, more preferably a benzene ring having a substituent, and particularly preferably a benzene ring having a carbazolyl group.
 また、一般式(1)において、Arにより表される芳香環としては、各々3環以上の縮合環が好ましい一態様であり、3環以上が縮合した芳香族炭化水素縮合環としては、具体的には、ナフタセン環、アントラセン環、テトラセン環、ペンタセン環、ヘキサセン環、フェナントレン環、ピレン環、ベンゾピレン環、ベンゾアズレン環、クリセン環、ベンゾクリセン環、アセナフテン環、アセナフチレン環、トリフェニレン環、コロネン環、ベンゾコロネン環、ヘキサベンゾコロネン環、フルオレン環、ベンゾフルオレン環、フルオランテン環、ペリレン環、ナフトペリレン環、ペンタベンゾペリレン環、ベンゾペリレン環、ペンタフェン環、ピセン環、ピラントレン環、コロネン環、ナフトコロネン環、オバレン環、アンスラアントレン環等が挙げられる。なお、これらの環は、更に上記の置換基を有していてもよい。 In the general formula (1), the aromatic ring represented by Ar is preferably a condensed ring of three or more rings, and the aromatic hydrocarbon condensed ring condensed with three or more rings is specifically exemplified. Naphthacene ring, anthracene ring, tetracene ring, pentacene ring, hexacene ring, phenanthrene ring, pyrene ring, benzopyrene ring, benzoazulene ring, chrysene ring, benzochrysene ring, acenaphthene ring, acenaphthylene ring, triphenylene ring, coronene ring, benzocoronene Ring, hexabenzocoronene ring, fluorene ring, benzofluorene ring, fluoranthene ring, perylene ring, naphthperylene ring, pentabenzoperylene ring, benzoperylene ring, pentaphen ring, picene ring, pyrantolen ring, coronene ring, naphthocoronene ring, ovalen ring, Anthracanthrene ring And the like. In addition, these rings may further have the above substituent.
 また、3環以上が縮合した芳香族複素環としては、具体的には、アクリジン環、ベンゾキノリン環、カルバゾール環、カルボリン環、フェナジン環、フェナントリジン環、フェナントロリン環、カルボリン環、サイクラジン環、キンドリン環、テペニジン環、キニンドリン環、トリフェノジチアジン環、トリフェノジオキサジン環、フェナントラジン環、アントラジン環、ペリミジン環、ジアザカルバゾール環(カルボリン環を構成する炭素原子の任意の一つが窒素原子で置き換わったものを表す)、フェナントロリン環、ジベンゾフラン環、ジベンゾチオフェン環、ナフトフラン環、ナフトチオフェン環、ベンゾジフラン環、ベンゾジチオフェン環、ナフトジフラン環、ナフトジチオフェン環、アントラフラン環、アントラジフラン環、アントラチオフェン環、アントラジチオフェン環、チアントレン環、フェノキサチイン環、チオファントレン環(ナフトチオフェン環)等が挙げられる。なお、これらの環は更に置換基を有していてもよい。 Specific examples of the aromatic heterocycle condensed with three or more rings include an acridine ring, a benzoquinoline ring, a carbazole ring, a carboline ring, a phenazine ring, a phenanthridine ring, a phenanthroline ring, a carboline ring, a cyclazine ring, Kindin ring, tepenidine ring, quinindrin ring, triphenodithiazine ring, triphenodioxazine ring, phenanthrazine ring, anthrazine ring, perimidine ring, diazacarbazole ring (any one of the carbon atoms constituting the carboline ring is a nitrogen atom Phenanthroline ring, dibenzofuran ring, dibenzothiophene ring, naphthofuran ring, naphthothiophene ring, benzodifuran ring, benzodithiophene ring, naphthodifuran ring, naphthodithiophene ring, anthrafuran ring, anthradifuran ring, Emissions tiger thiophene ring, anthradithiophene ring, thianthrene ring, phenoxathiin ring, such as thio fan train ring (naphthothiophene ring). In addition, these rings may further have a substituent.
 また、一般式(1)において、nは0~8の整数を表すが、0~2であることが好ましく、特にXがO、Sである場合には1~2であることが好ましい。 In the general formula (1), n represents an integer of 0 to 8, preferably 0 to 2, particularly preferably 1 to 2 when X is O or S.
 本発明においては、特に、ジベンゾフラン環とカルバゾール環をともに有するホスト化合物が好ましい。 In the present invention, a host compound having both a dibenzofuran ring and a carbazole ring is particularly preferable.
 以下に、一般式(1)で表されるホスト化合物の具体例(a-1~a-41)を示すが、これらに限定されるものではない。 Specific examples (a-1 to a-41) of the host compound represented by the general formula (1) are shown below, but are not limited thereto.
Figure JPOXMLDOC01-appb-C000008
 
Figure JPOXMLDOC01-appb-C000008
 
Figure JPOXMLDOC01-appb-C000009
 
Figure JPOXMLDOC01-appb-C000009
 
Figure JPOXMLDOC01-appb-C000010
 
Figure JPOXMLDOC01-appb-C000010
 
Figure JPOXMLDOC01-appb-C000011
 
Figure JPOXMLDOC01-appb-C000011
 
Figure JPOXMLDOC01-appb-C000012
 
Figure JPOXMLDOC01-appb-C000012
 
Figure JPOXMLDOC01-appb-C000013
 
Figure JPOXMLDOC01-appb-C000013
 
Figure JPOXMLDOC01-appb-C000014
 
Figure JPOXMLDOC01-appb-C000014
 
Figure JPOXMLDOC01-appb-C000015
 
Figure JPOXMLDOC01-appb-C000015
 
(4.2)発光性ドーパント化合物
 発光性ドーパント化合物(発光ドーパントともいう)について説明する。
 発光性ドーパントとしては、蛍光ドーパント(蛍光性化合物ともいう)、リン光ドーパント(リン光発光体、リン光性化合物、リン光発光性化合物等ともいう)を用いることができる。
(4.2) Luminescent dopant compound A luminescent dopant compound (also referred to as a luminescent dopant) will be described.
As the light-emitting dopant, a fluorescent dopant (also referred to as a fluorescent compound) or a phosphorescent dopant (also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like) can be used.
(4.2.1)蛍光ドーパント(蛍光性化合物ともいう)
 蛍光ドーパントとしては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等や、レーザー色素に代表される蛍光量子収率が高い化合物が挙げられる。
(4.2.1) Fluorescent dopant (also called fluorescent compound)
As fluorescent dopants, coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes , Polythiophene dyes, rare earth complex phosphors, and the like, and compounds having a high fluorescence quantum yield such as laser dyes.
(4.2.2)リン光ドーパント(リン光発光ドーパントともいう)
 本発明に係るリン光ドーパントについて説明する。
 本発明に係るリン光ドーパント化合物は、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
 上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。
 リン光ドーパントの発光は原理としては2種挙げられる。
 その1つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こって発光性ホスト化合物の励起状態が生成し、このエネルギーをリン光ドーパントに移動させることでリン光ドーパントからの発光を得るというエネルギー移動型である。
 もう1つはリン光ドーパントがキャリアトラップとなり、リン光ドーパント上でキャリアの再結合が起こり、リン光ドーパント化合物からの発光が得られるというキャリアトラップ型である。
 いずれの場合においても、リン光ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。
(4.2.2) Phosphorescent dopant (also called phosphorescent dopant)
The phosphorescent dopant according to the present invention will be described.
The phosphorescent dopant compound according to the present invention is a compound in which light emission from an excited triplet is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
There are two types of light emission of the phosphorescent dopant in principle.
One is that recombination of carriers occurs on the host compound to which carriers are transported to generate an excited state of the luminescent host compound, and this energy is transferred to the phosphorescent dopant to obtain light emission from the phosphorescent dopant. It is an energy transfer type.
The other is a carrier trap type in which a phosphorescent dopant serves as a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant compound is obtained.
In any case, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
 また、本発明に係る発光層には、以下の特許公報に記載されている化合物等を併用してもよい。
 例えば、国際公開第00/70655号、特開2002-280178号公報、特開2001-181616号公報、特開2002-280179号公報、特開2001-181617号公報、特開2002-280180号公報、特開2001-247859号公報、特開2002-299060号公報、特開2001-313178号公報、特開2002-302671号公報、特開2001-345183号公報、特開2002-324679号公報、国際公開第02/15645号、特開2002-332291号公報、特開2002-50484号公報、特開2002-332292号公報、特開2002-83684号公報、特表2002-540572号公報、特開2002-117978号公報、特開2002-338588号公報、特開2002-170684号公報、特開2002-352960号公報、国際公開第01/93642号、特開2002-50483号公報、特開2002-100476号公報、特開2002-173674号公報、特開2002-359082号公報、特開2002-175884号公報、特開2002-363552号公報、特開2002-184582号公報、特開2003-7469号公報、特表2002-525808号公報、特開2003-7471号公報、特表2002-525833号公報、特開2003-31366号公報、特開2002-226495号公報、特開2002-234894号公報、特開2002-235076号公報、特開2002-241751号公報、特開2001-319779号公報、特開2001-319780号公報、特開2002-62824号公報、特開2002-100474号公報、特開2002-203679号公報、特開2002-343572号公報、特開2002-203678号公報等である。
 また本発明に係る発光ドーパントは、複数種の化合物を併用して用いてもよく、構造の異なるリン光ドーパント同士の組み合わせや、リン光ドーパントと蛍光ドーパントを組み合わせて用いてもよい。
Moreover, you may use together the compound etc. which are described in the following patent gazettes in the light emitting layer which concerns on this invention.
For example, International Publication No. 00/70655, JP 2002-280178, JP 2001-181616, JP 2002-280179, JP 2001-181617, JP 2002-280180, JP 2001-247859, JP 2002-299060, JP 2001-313178, JP 2002-302671, JP 2001-345183, JP 2002-324679, International publication No. 02/15645, JP 2002-332291 A, JP 2002-50484 A, JP 2002-332292 A, JP 2002-83684 A, JP 2002-540572 A, JP 2002-2002 A. No. 117978, Japanese Patent Laid-Open No. 2002-33858 Publication No. 2002-170684 Publication No. 2002-352960 Publication No. WO 01/93642 Publication No. 2002-50483 Publication No. 2002-1000047 Publication No. 2002-173684 Publication JP-A-2002-359082, JP-A-2002-17584, JP-A-2002-363552, JP-A-2002-184582, JP-A-2003-7469, JP-A-2002-525808, JP 2003-7471, JP-A 2002-525833, JP-A 2003-31366, JP-A 2002-226495, JP-A 2002-234894, JP-A 2002-23576, JP-A 2002 -241751 and JP-A-2001-319779 Japanese Patent Laid-Open No. 2001-319780, Japanese Patent Laid-Open No. 2002-62824, Japanese Patent Laid-Open No. 2002-1000047, Japanese Patent Laid-Open No. 2002-203679, Japanese Patent Laid-Open No. 2002-343572, Japanese Patent Laid-Open No. 2002-203678, etc. It is.
In addition, the light-emitting dopant according to the present invention may be used in combination of a plurality of types of compounds, or may be a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
(4.2.2a)具体例
 以下に、本発明において、好ましく用いることの出来る公知のリン光ドーパント化合物の具体例(D-1~D-55)を挙げる。勿論、本発明はこれらに限定されない。
(4.2.2a) Specific Examples Specific examples (D-1 to D-55) of known phosphorescent dopant compounds that can be preferably used in the present invention are listed below. Of course, the present invention is not limited to these.
Figure JPOXMLDOC01-appb-C000016
 
Figure JPOXMLDOC01-appb-C000016
 
Figure JPOXMLDOC01-appb-C000017
 
Figure JPOXMLDOC01-appb-C000017
 
Figure JPOXMLDOC01-appb-C000018
 
Figure JPOXMLDOC01-appb-C000018
 
Figure JPOXMLDOC01-appb-C000019
 
Figure JPOXMLDOC01-appb-C000019
 
Figure JPOXMLDOC01-appb-C000020
 
Figure JPOXMLDOC01-appb-C000020
 
Figure JPOXMLDOC01-appb-C000021
 
Figure JPOXMLDOC01-appb-C000021
 
(4.4.2b)膜密度
 本実施形態では、発光層の膜密度が他の層の膜密度との間において一定の関係を有している。
 詳しくは、発光層の膜密度をρEMと、正孔輸送層の膜密度をρHTと、電子輸送層の膜密度をρETと、発光層の膜密度と正孔輸送層の膜密度との差をΔρ(EM-HT)と、発光層の膜密度と電子輸送層の膜密度との差をΔρ(EM-ET)とした場合に、条件式(i),(ii)の両方を満たしている。
   Δρ(EM-HT)=(ρEM-ρHT)≧0.03 … (i)
   Δρ(EM-ET)=(ρEM-ρET)≧0.03 … (ii)
 ρEMの値は好ましくは1.40以上である。
(4.4.2b) Film density In this embodiment, the film density of the light emitting layer has a certain relationship with the film density of the other layers.
Specifically, the film density of the light emitting layer is ρEM, the film density of the hole transport layer is ρHT, the film density of the electron transport layer is ρET, and the difference between the film density of the light emitting layer and the film density of the hole transport layer is When Δρ (EM−HT) and the difference between the film density of the light emitting layer and the film density of the electron transport layer are Δρ (EM−ET), both of the conditional expressions (i) and (ii) are satisfied. .
Δρ (EM−HT) = (ρEM−ρHT) ≧ 0.03 (i)
Δρ (EM−ET) = (ρEM−ρET) ≧ 0.03 (ii)
The value of ρEM is preferably 1.40 or more.
 さらに、陽極および陰極のうち支持基板側に配置された電極と発光層との間には、正孔輸送層または電子輸送層を含む複数の非発光層が形成された場合、発光層および非発光層の各膜密度のなかでは、ρEMの値が最も大きく、非発光層は発光層に近い層ほど膜密度が大きくなっている。
 たとえば、支持基板上に陽極が形成され、陽極と発光層との間に正孔注入層および正孔輸送層の2層の非発光層が形成された場合であって、陽極上に正孔注入層、正孔輸送層および発光層がこの順に形成され、正孔輸送層が発光層に接触するときは、発光層の膜密度が正孔注入層および正孔輸送層の各膜密度より大きく、非発光層の正孔注入層と正孔輸送層とのうち発光層に近い正孔輸送層の膜密度が正孔注入層の膜密度より大きくなっている。
 他方、支持基板上に陰極が形成され、陰極と発光層との間に電子注入層および電子輸送層の2層の非発光層が形成された場合であって、陰極上に電子注入層、電子輸送層および発光層がこの順に形成され、電子輸送層が発光層に接触するときは、発光層の膜密度が電子注入層および電子輸送層の各膜密度より大きく、非発光層の電子注入層と電子輸送層とのうち発光層に近い電子輸送層の膜密度が電子注入層の膜密度より大きくなっている。
Furthermore, when a plurality of non-light emitting layers including a hole transport layer or an electron transport layer are formed between the anode and the cathode disposed on the support substrate side and the light emitting layer, the light emitting layer and the non-light emitting layer are formed. Among the film densities of the layers, the value of ρEM is the largest, and the non-light emitting layer has a higher film density as the layer is closer to the light emitting layer.
For example, when an anode is formed on a support substrate and two non-light-emitting layers of a hole injection layer and a hole transport layer are formed between the anode and the light-emitting layer, hole injection is performed on the anode. When the layer, the hole transport layer and the light emitting layer are formed in this order, and the hole transport layer is in contact with the light emitting layer, the film density of the light emitting layer is larger than the film density of each of the hole injection layer and the hole transport layer, Of the hole injection layer and the hole transport layer of the non-light emitting layer, the film density of the hole transport layer close to the light emitting layer is higher than the film density of the hole injection layer.
On the other hand, a cathode is formed on the support substrate, and two non-light-emitting layers, ie, an electron injection layer and an electron transport layer, are formed between the cathode and the light-emitting layer. When the transport layer and the light-emitting layer are formed in this order, and the electron transport layer is in contact with the light-emitting layer, the film density of the light-emitting layer is larger than the film density of the electron injection layer and the electron transport layer, and the electron injection layer of the non-light-emitting layer And the electron transport layer, the film density of the electron transport layer close to the light emitting layer is larger than the film density of the electron injection layer.
 本発明で用いられる膜密度の測定方法について説明する。
 本発明の膜密度はX線反射率測定法により求めることができる。
 極低角度、例えば0.2度から2度の範囲の反射率を測定し、得られた反射率曲線をフレネルの式より求められる多層膜試料の反射率の式に、フィッティングすることにより求められる。フィッティングの方法については、L.G.Parratt,Phis.Rev.,95359(1954年)を参考にすることができる。
 具体的には、X線発生源は、銅をターゲットとし、50kV-300mAで作動させる。多層膜ミラーとGe(111)チャンネルカットモノクロメーターにて単色化したX線を使用する。測定は、ソフトウェアーATX-CrystalGuide Ver.6.5.3.4を用い、半割、アライメント調整後、2θ/ω=0度から1度を0.002度/stepで0.05度/min.で走査する。
 上記の測定条件で反射率曲線を測定した後、株式会社リガク製GXRRVer.2.1.0.0解析ソフトウェアーを用いて測定を行うことができる。
A method for measuring the film density used in the present invention will be described.
The film density of the present invention can be determined by an X-ray reflectance measurement method.
It is obtained by measuring the reflectance at a very low angle, for example, in the range of 0.2 to 2 degrees, and fitting the obtained reflectance curve to the reflectance formula of the multilayer film sample obtained from the Fresnel formula. . For the fitting method, see L.C. G. Parratt, Phis. Rev. , 95359 (1954).
Specifically, the X-ray generation source is operated at 50 kV-300 mA with copper as a target. X-rays monochromatized with a multilayer mirror and a Ge (111) channel cut monochromator are used. The measurement was performed using the software ATX-CrystalGuide Ver. 6.5.3.4, halved, after alignment adjustment, 2θ / ω = 0 ° to 1 ° from 0.002 ° / step to 0.05 ° / min. Scan with.
After measuring the reflectance curve under the above measurement conditions, GXRRVer. 2.1.0.0 Measurements can be made using analysis software.
《有機機能層の各層の形成法》
 本発明の有機エレクトロルミネッセンス素子では、構成層である少なくとも1層の発光層が塗布法で成膜形成されていればよく、その他の層の形成方法は特に塗布成膜方法に限定されず、必要に応じて、蒸着法等を用いて成膜することもできる。
<Method for forming each layer of organic functional layer>
In the organic electroluminescent device of the present invention, it is sufficient that at least one light emitting layer as a constituent layer is formed by a coating method, and the method for forming the other layers is not particularly limited to the coating method, and is necessary. In accordance with the above, it is also possible to form a film using a vapor deposition method or the like.
 本発明の有機EL素子の製造方法においては、発光層の形成方法として、塗布法(塗布成膜方法ともいう)が用いられる。
 発光層の形成方法には、スピンコート法、キャスト法、インクジェット法、スプレー法、印刷法、スロット型コータ法等がある。
 均質な膜が得られやすくかつピンホールが生成しにくい等の観点から、発光層の形成方法は、好ましくはスピンコート法、インクジェット法、スプレー法、印刷法、スロット型コータ法等の塗布法による成膜であり、その中でもより好ましくはスロット型コータ法を用いるのがよい。
In the method for producing an organic EL device of the present invention, a coating method (also referred to as a coating film forming method) is used as a method for forming a light emitting layer.
As a method for forming the light emitting layer, there are a spin coat method, a cast method, an ink jet method, a spray method, a printing method, a slot type coater method and the like.
From the standpoint that a homogeneous film is easily obtained and pinholes are not easily generated, the light emitting layer is preferably formed by a coating method such as a spin coating method, an ink jet method, a spray method, a printing method, or a slot coater method. Of these, the slot type coater method is preferably used.
 もちろん、本発明の有機EL素子の発光層以外の構成層についても、上記の塗布法(塗布成膜方法)を適用することが好ましい。 Of course, it is preferable to apply the above-described coating method (coating film forming method) also to the constituent layers other than the light emitting layer of the organic EL element of the present invention.
 塗布成膜後は、塗布液を乾燥させる。
 塗布成膜後の乾燥方法として、スピン乾燥、熱風乾燥、遠赤外乾燥、真空乾燥、減圧乾燥などを適用することができる。
After the coating film formation, the coating solution is dried.
As a drying method after coating film formation, spin drying, hot air drying, far-infrared drying, vacuum drying, reduced pressure drying, or the like can be applied.
 以下、本発明の有機EL素子の製造方法の一部として、発光層の塗布成膜法を詳述する。
 ここでいう「塗布成膜法」とは、塗布液を塗布し、その後当該塗布液の乾燥が終了するまでの工程の意味である。
 本発明者らは、様々な塗布成膜法で膜厚が等しくなるように成膜された低分子有機物薄膜を用意し、該低分子有機物薄膜中の含有微結晶の大きさ及び含有量の抑制について鋭意検討を重ねたところ、ホスト材料の多種混合、ドーパント(発光ドーパントともいう)材料の多種混合、溶媒(発光ホストともいう)の多種混合、塗布環境の高温化および塗布・乾燥後の最終的な膜厚の5%増の膜厚までの乾燥時間の短縮を図ることにより、X線小角散乱測定で低分子有機物による散乱線のギニエプロットの傾きが緩い、即ち凝集や空隙の少ない、材料が均一に分散された薄膜を形成できることを見出した。
Hereinafter, as a part of the manufacturing method of the organic EL element of the present invention, a coating film forming method of the light emitting layer will be described in detail.
The “coating film-forming method” as used herein means a process from application of a coating solution to completion of drying of the coating solution.
The present inventors prepared low molecular organic thin films formed so as to have the same film thickness by various coating film forming methods, and suppressed the size and content of contained microcrystals in the low molecular organic thin films. As a result of intensive research, we have mixed various host materials, mixed various dopants (also referred to as light-emitting dopants), mixed various solvents (also referred to as light-emitting hosts), heated the coating environment, and finally after coating and drying. By shortening the drying time up to a 5% increase in thickness, the slope of the Guinier plot of scattered rays from low-molecular-weight organic substances in the X-ray small angle scattering measurement is gentle, that is, there is little aggregation or voids, and the material is uniform. It has been found that a thin film dispersed in can be formed.
 具体的には、発光層には、ホスト材料が1種類混合されていればよく、好ましくは3種類以上混合され、より好ましくは5種以上混合され、さらに好ましくは7種以上混合されているのがよい。
 発光層には、ドーパント材料が少なくとも2種以上混合されていることが好ましく、3種以上混合されていることが更に好ましい。
 発光層の塗布液の溶媒としては、沸点が100℃以下の低沸点溶媒を使用し、好ましくは酢酸イソプロピルまたは酢酸nプロピルを使用する。
 発光層の塗布液は2種以上の混合溶媒から成ることが好ましい。
 発光層の塗布液の成膜条件としては、35℃以上の塗布環境で成膜されることが好ましく、40℃以上で成膜されることが好ましい。
 発光層の塗布液は、塗布されてから(塗布終了してから)5秒以内に乾燥処理に供されるのがよく、好ましくは塗布されてから3秒以内に乾燥処理に供されるのがよい。
 塗布成膜法では、場合に応じて過冷却状態を発生させるため、塗布・乾燥後に冷却を行ってもよい。
 塗布成膜後の乾燥工程では、スピン乾燥、熱風乾燥、遠赤外乾燥、真空乾燥、減圧乾燥などを適用することができる。
 これらの乾燥条件は、発光層の塗布液を塗布してその塗布液を乾燥させ、乾燥後の最終的な膜厚の5%増の膜厚までを乾燥時間とした場合、当該乾燥時間が3秒以内とされることが好ましく、2秒以内とされることがより好ましい。
Specifically, it is sufficient that one type of host material is mixed in the light emitting layer, preferably three or more types are mixed, more preferably five or more types are mixed, and still more preferably seven or more types are mixed. Is good.
In the light emitting layer, at least two kinds of dopant materials are preferably mixed, and more preferably three or more kinds are mixed.
As the solvent of the coating solution for the light emitting layer, a low boiling point solvent having a boiling point of 100 ° C. or less is used, and preferably isopropyl acetate or npropyl acetate is used.
The coating solution for the light emitting layer is preferably composed of two or more mixed solvents.
As a film forming condition of the coating solution for the light emitting layer, the film is preferably formed in a coating environment of 35 ° C. or higher, and is preferably formed at 40 ° C. or higher.
The coating solution for the light emitting layer may be subjected to a drying treatment within 5 seconds after being applied (after completion of the coating), and is preferably subjected to a drying treatment within 3 seconds after being applied. Good.
In the coating film forming method, in order to generate a supercooled state depending on the case, cooling may be performed after coating and drying.
In the drying step after coating film formation, spin drying, hot air drying, far infrared drying, vacuum drying, reduced pressure drying, or the like can be applied.
These drying conditions are as follows. When the coating solution for the light emitting layer is applied, the coating solution is dried, and the drying time is 5% of the final film thickness after drying, the drying time is 3 Preferably, it is within 2 seconds, and more preferably within 2 seconds.
 上記の手段により、X線小角散乱測定で低分子有機物による散乱線のギニエプロットの傾きが緩い、即ち凝集や空隙の少ない、蒸着膜で形成されたような材料が分散された薄膜を形成することができた。
 発光層等の薄膜の塗布乾燥過程では、溶液を塗布した後、薄膜が形成され乾燥が進行すると溶媒が蒸発するにしたがい、膜厚が薄くなっていき、乾燥を十分に行うと溶媒は蒸発しなくなり、乾燥後の最終的な膜厚の薄膜となる。
 前記「乾燥後の最終的な膜厚の5%増の膜厚」というのは、例えば、乾燥後の最終的な膜厚が50nmの薄膜を作製しようとした場合は、52.5nmの膜厚に相当する。
 発光層の膜厚の測定には、例えば分光エリプソメータ(例えばジョバンイボン社製UVISEL)を用いることができる。
By the above-mentioned means, it is possible to form a thin film in which a material such as a vapor deposition film in which the slope of the Guinier plot of the scattered radiation due to the low-molecular-weight organic substance is gentle in the X-ray small angle scattering measurement, that is, there is little aggregation or void is dispersed. did it.
In the process of coating and drying thin films such as the light-emitting layer, as the film evaporates as the thin film is formed and drying proceeds after the solution is applied, the film thickness decreases and the solvent evaporates after sufficient drying. It becomes a thin film having a final film thickness after drying.
The “film thickness that is 5% more than the final film thickness after drying” means that, for example, when a thin film having a final film thickness after drying of 50 nm is to be produced, the film thickness is 52.5 nm. It corresponds to.
For example, a spectroscopic ellipsometer (for example, UVISEL manufactured by Joban Yvon) can be used to measure the thickness of the light emitting layer.
《陽極2》
 有機EL素子を構成する陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、インジウムチンオキシド(ITO)、SnO、ZnO等の導電性透明材料が挙げられる。また、IDIXO(In-ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極は、これらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状パターンを形成してもよく、あるいはパターン精度をあまり必要としない場合(100μm以上程度)は、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式成膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。さらに膜厚は材料にもよるが、通常は、10~1000nmの範囲であり、好ましくは10~200nmの範囲で選ばれる。
<< Anode 2 >>
As the anode constituting the organic EL device, an electrode material made of a metal, an alloy, an electrically conductive compound or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO. Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a desired shape pattern may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material. Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film-forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually in the range of 10 to 1000 nm, preferably in the range of 10 to 200 nm.
《陰極8》
 一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm~5μm、好ましくは50~200nmの範囲で選ばれる。なお、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が透明または半透明であれば発光輝度が向上し好都合である。
 また、陰極に上記金属を1~20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に形成することで、透明または半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する有機EL素子を作製することができる。
<< Cathode 8 >>
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.
In addition, a transparent or translucent cathode can be produced by forming the above metal on the cathode with a film thickness of 1 to 20 nm and then forming the conductive transparent material mentioned in the description of the anode thereon. By applying this, an organic EL element in which both the anode and the cathode are transmissive can be produced.
《支持基板1》
 本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等ともいう)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。リジットな基板よりもフレキシブルな基板において、高温保存安定性や色度変動を抑制する効果が大きく現れるため、特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な可撓性を備えた樹脂フィルムである。
 樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類またはそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。
<Supporting substrate 1>
The support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. Since the effect of suppressing high-temperature storage stability and chromaticity variation appears greatly in a flexible substrate than a rigid substrate, a particularly preferable support substrate has flexibility that can give flexibility to an organic EL element. Resin film.
Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.
 樹脂フィルムの表面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が0.01g/(m・24h)以下のバリア性フィルムであることが好ましく、さらには、JIS K 7126-1987に準拠した方法で測定した酸素透過度が、10-3cm/(m・24h・atm)以下、水蒸気透過度が10-3g/(m・24h)以下の高バリア性フィルムであることが好ましく、前記の水蒸気透過度が10-5g/(m・24h)以下であることがさらに好ましい。
 バリア膜を形成する材料としては、水分や酸素等の有機EL素子の劣化を招く因子の浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。さらに該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機機能層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。
 バリア膜の形成方法については、特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ-イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004-68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。
On the surface of the resin film, an inorganic film, an organic film or a hybrid film of both may be formed. The water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. And a relative humidity (90 ± 2)% RH) of 0.01 g / (m 2 · 24 h) or less is preferable, and oxygen permeability measured by a method according to JIS K 7126-1987. The film is preferably a high-barrier film having a degree of 10 −3 cm 3 / (m 2 · 24 h · atm) or less and a water vapor permeability of 10 −3 g / (m 2 · 24 h) or less. More preferably, the degree is 10 −5 g / (m 2 · 24 h) or less.
As a material for forming the barrier film, any material may be used as long as it has a function of suppressing entry of factors that cause deterioration of the organic EL element such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like is used. Can do. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination order of an inorganic layer and an organic functional layer, It is preferable to laminate | stack both alternately several times.
The method for forming the barrier film is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
 不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。
 本発明の有機EL素子において、発光の室温における外部取り出し効率は、1%以上であることが好ましく、より好ましくは5%以上である。
 ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。
Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
In the organic EL device of the present invention, the external extraction efficiency of light emission at room temperature is preferably 1% or more, more preferably 5% or more.
Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
《封止(封止接着剤9,封止部材10)》
 本発明の有機EL素子に適用可能な封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。
 封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。
 具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等を挙げることができる。金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコーン、ゲルマニウム及びタンタルからなる群から選ばれる一種以上の金属または合金からなるものが挙げられる。
<< Sealing (sealing adhesive 9, sealing member 10) >>
As a sealing means applicable to the organic EL element of the present invention, for example, a method of adhering a sealing member, an electrode, and a support substrate with an adhesive can be mentioned.
As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and concave plate shape or flat plate shape may be sufficient. Further, transparency and electrical insulation are not particularly limited.
Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicone, germanium, and tantalum.
 本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。さらには、ポリマーフィルムは、JIS K 7126-1987に準拠した方法で測定された酸素透過度が、1×10-3cm/(m・24h・atm)以下、JIS K 7129-1992に準拠した方法で測定された水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が1×10-3g/(m・24h)以下のものであることが好ましい。
 封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。
In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 cm 3 / (m 2 · 24 h · atm) or less, and conforms to JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured by the above method is preferably 1 × 10 −3 g / (m 2 · 24 h) or less.
For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
 接着剤としては、具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2-シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。
 なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサを使ってもよいし、スクリーン印刷のように印刷してもよい。
Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. Can be mentioned. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. Further, a desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
 また、有機機能層を挟み支持基板と対向する側の電極の外側に該電極と有機機能層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。さらに該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ-イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 It is also preferable to cover the electrode and the organic functional layer on the outer side of the electrode facing the support substrate with the organic functional layer in between, and form an inorganic or organic layer in contact with the support substrate to form a sealing film Can be. In this case, the material for forming the film may be a material having a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can. Further, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
 封止部材と有機EL素子の表示領域との間隙には、気相及び液相を形成することを目的として、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。
 吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。
In order to form a gas phase and a liquid phase in the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, an inert gas such as fluorinated hydrocarbon or silicon oil is used. It is preferable to inject a liquid. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
 封止にはケーシングタイプの封止(缶封止)と密着タイプの封止(固体封止)があるが、薄型化の観点からは固体封止が好ましい。また、可撓性の有機EL素子を作製する場合は、封止部材にも可撓性が求められるため、固体封止が好ましい。 Sealing includes casing type sealing (can sealing) and close contact type sealing (solid sealing), but solid sealing is preferable from the viewpoint of thinning. Moreover, when producing a flexible organic EL element, since sealing is also required for the sealing member, solid sealing is preferable.
 以下に、固体封止を行う場合の好ましい態様を説明する。
 本発明に係る封止用接着剤には、熱硬化接着剤や紫外線硬化樹脂などを用いることができるが、好ましくはエポキシ系樹脂、アクリル系樹脂、シリコーン樹脂など熱硬化接着剤、より好ましくは耐湿性、耐水性に優れ、硬化時の収縮が少ないエポキシ系熱硬化型接着性樹脂である。
 本発明に係る封止用接着剤の含水率は、300ppm以下であることが好ましく、0.01~200ppmであることがより好ましく、0.01~100ppmであることが最も好ましい。
 本発明でいう含水率は、いかなる方法により測定しても構わないが、例えば容量法水分計(カールフィッシャ-)、赤外水分計、マイクロ波透過型水分計、加熱乾燥重量法、GC/MS、IR、DSC(示差走査熱量計)、TDS(昇温脱離分析)が挙げられる。また、精密水分計AVM-3000型(オムニテック社製)等を用い、水分の蒸発によって生じる圧力上昇から水分を測定でき、フィルムまた固形フィルム等の水分率の測定を行うことができる。
 本発明おいて、封止用接着剤の含水率は、例えば、露点温度が-80℃以下、酸素濃度0.8ppmの窒素雰囲気下に置き時間を変化させることで調整することが出来る。また、100Pa以下の真空状態で置き時間を変化させて乾燥させることもできる。また、封止用接着材は接着剤のみで乾燥させることも出来るが、封止部材へ予め配置し乾燥させることも出来る。
 密着封止(固体封止)を行う場合、封止部材としては、例えば、50μm厚のPET(ポリエチレンテレフタレート)にアルミ箔(30μm厚)をラミネートしたものを用いる。これを封止部材として、アルミニウム面にディスペンサを使用して均一に塗布し封止用接着剤を予め配置しておき、樹脂基板1と封止部材5を位置合わせ後、両者を圧着して(0.1~3MPa)、温度80~180℃で密着・接合(接着)して、密着封止(固体封止)する。
 接着剤の種類また量、そして面積等によって加熱また圧着時間は変わるが0.1~3MPaの圧力で仮接着、また80~180℃の温度で、熱硬化時間は5秒~10分間の範囲で選べばよい。
 加熱した圧着ロールを用いると圧着(仮接着)と加熱が同時にでき、且つ内部の空隙も同時に排除でき好ましい。
 また、接着層の形成方法としては、材料に応じて、ディスペンサを用い、ロールコート、スピンコート、スクリーン印刷法、スプレーコートなどのコーティング法、印刷法を用いることができる。
Below, the preferable aspect in the case of performing solid sealing is demonstrated.
As the sealing adhesive according to the present invention, a thermosetting adhesive, an ultraviolet curable resin, or the like can be used, but preferably a thermosetting adhesive such as an epoxy resin, an acrylic resin, or a silicone resin, more preferably moisture resistant. It is an epoxy thermosetting adhesive resin that is excellent in water resistance and water resistance and has little shrinkage during curing.
The water content of the sealing adhesive according to the present invention is preferably 300 ppm or less, more preferably 0.01 to 200 ppm, and most preferably 0.01 to 100 ppm.
The moisture content referred to in the present invention may be measured by any method. For example, a volumetric moisture meter (Karl Fischer), an infrared moisture meter, a microwave transmission moisture meter, a heat-dry weight method, GC / MS , IR, DSC (differential scanning calorimeter), TDS (temperature programmed desorption analysis). Further, using a precision moisture meter AVM-3000 (Omnitech) or the like, moisture can be measured from a pressure increase caused by evaporation of moisture, and moisture content of a film or a solid film can be measured.
In the present invention, the moisture content of the sealing adhesive can be adjusted by, for example, placing it in a nitrogen atmosphere with a dew point temperature of −80 ° C. or lower and an oxygen concentration of 0.8 ppm, and changing the time. Further, it can be dried in a vacuum state of 100 Pa or less while changing the time. Further, the sealing adhesive can be dried only with an adhesive, but can also be placed in advance on the sealing member and dried.
When close sealing (solid sealing) is performed, as the sealing member, for example, a 50 μm thick PET (polyethylene terephthalate) laminated with an aluminum foil (30 μm thick) is used. Using this as a sealing member, it is uniformly applied to the aluminum surface using a dispenser, a sealing adhesive is placed in advance, the resin substrate 1 and the sealing member 5 are aligned, and both are pressure-bonded ( 0.1-3 MPa) and a temperature of 80-180 ° C. for close contact / bonding (adhesion), and close sealing (solid sealing).
Heating or pressure bonding time varies depending on the type, amount, and area of the adhesive, but temporary bonding is performed at a pressure of 0.1 to 3 MPa, and heat curing time is in the range of 5 seconds to 10 minutes at a temperature of 80 to 180 ° C. Just choose.
The use of a heated crimping roll is preferred because it allows simultaneous crimping (temporary bonding) and heating, and eliminates internal voids at the same time.
As a method for forming the adhesive layer, a coating method such as roll coating, spin coating, screen printing, or spray coating, or a printing method can be used depending on the material.
 固体封止は以上のように封止部材と有機EL素子基板との間に空間がなく硬化した樹脂で覆う形態である。
 封止部材としては、ステンレス、アルミニウム、マグネシウム合金等の金属、ポリエチレンテレフタレート、ポリカーボネート、ポリスチレン、ナイロン、ポリ塩化ビニル等のプラスチック、およびこれらの複合物、ガラス等が挙げられ、必要に応じて、特に樹脂フィルムの場合には、樹脂基板と同様、アルミニウム、酸化アルミニウム、酸化ケイ素、窒化ケイ素等のガスバリア層を積層したものを用いることができる。
 ガスバリア層は、封止部材成形前に封止部材の両面若しくは片面にスパッタリング、蒸着等により形成することもできるし、封止後に封止部材の両面若しくは片面に同様な方法で形成してもよい。これについても、酸素透過度が1×10-3ml/(m・24h・atm)以下、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10-3g/(m・24h)以下のものであることが好ましい。
 封止部材としては、アルミニウム等の金属箔をラミネートしたフィルム等でも良い。金属箔の片面にポリマーフィルムを積層する方法としては、一般に使用されているラミネート機を使用することができる。接着剤としてはポリウレタン系、ポリエステル系、エポキシ系、アクリル系等の接着剤を用いることができる。必要に応じて硬化剤を併用してもよい。ホットメルトラミネーション法やエクストルージョンラミネート法および共押出しラミネーション法も使用できるがドライラミネート方式が好ましい。
 また、金属箔をスパッタや蒸着等で形成し、導電性ペースト等の流動性電極材料から形成する場合は、逆にポリマーフィルムを基材としてこれに金属箔を成膜する方法で作成してもよい。
As described above, solid sealing is a form in which there is no space between the sealing member and the organic EL element substrate and the resin is covered with a cured resin.
Examples of the sealing member include metals such as stainless steel, aluminum and magnesium alloys, polyethylene terephthalate, polycarbonate, polystyrene, nylon, plastics such as polyvinyl chloride, and composites thereof, glass, and the like. In the case of a resin film, a laminate of gas barrier layers such as aluminum, aluminum oxide, silicon oxide, and silicon nitride can be used as in the case of a resin substrate.
The gas barrier layer can be formed by sputtering, vapor deposition or the like on both surfaces or one surface of the sealing member before molding the sealing member, or may be formed on both surfaces or one surface of the sealing member after sealing by a similar method. . Also in this case, the oxygen permeability is 1 × 10 −3 ml / (m 2 · 24 h · atm) or less, the water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) is 1 × It is preferably 10 −3 g / (m 2 · 24 h) or less.
The sealing member may be a film laminated with a metal foil such as aluminum. As a method for laminating the polymer film on one side of the metal foil, a generally used laminating machine can be used. As the adhesive, polyurethane-based, polyester-based, epoxy-based, acrylic-based adhesives and the like can be used. You may use a hardening | curing agent together as needed. A hot melt lamination method, an extrusion lamination method and a coextrusion lamination method can also be used, but a dry lamination method is preferred.
In addition, when the metal foil is formed by sputtering or vapor deposition and is formed from a fluid electrode material such as a conductive paste, it may be created by a method of forming a metal foil on a polymer film as a base. Good.
《保護膜、保護板》
 有機機能層を挟み支持基板と対向する側の封止膜、あるいは封止用フィルムの外側に、有機EL素子の機械的強度を高めるため、保護膜あるいは保護板を設けてもよい。特に、封止が封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量かつ薄膜化ということからポリマーフィルムを用いることが好ましい。
 本発明において、可撓性支持基板から陽極との間、あるいは可撓性支持基板から光出射側の何れかの場所に光取出し部材を有することが好ましい。
 光取出し部材としては、プリズムシートやレンズシートおよび拡散シートが挙げられる。また、全反射を起こす界面もしくはいずれかの媒質中に導入される回折格子や拡散構造等が挙げられる。
 通常、基板から光を放射するような有機エレクトロルミネッセンス素子においては、発光層から放射された光の一部が基板と空気との界面において全反射を起こし、光を損失するという問題が発生する。この問題を解決するために、基板の表面にプリズムやレンズ状の加工を施す、もしくは基板の表面にプリズムシートやレンズシートおよび拡散シートを貼り付けることにより、全反射を抑制して光の取り出し効率を向上させる。
 また、光取り出し効率を高めるためには、全反射を起こす界面もしくはいずれかの媒質中に回折格子を導入する方法や拡散構造を導入する方法が知られている。
《Protective film, protective plate》
In order to increase the mechanical strength of the organic EL element, a protective film or a protective plate may be provided outside the sealing film on the side facing the support substrate with the organic functional layer interposed therebetween or on the outer side of the sealing film. In particular, when sealing is performed with a sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
In the present invention, it is preferable to have a light extraction member between the flexible support substrate and the anode, or at any location on the light emission side from the flexible support substrate.
Examples of the light extraction member include a prism sheet, a lens sheet, and a diffusion sheet. Further, a diffraction grating or a diffusion structure introduced into an interface or any medium that causes total reflection can be used.
In general, in an organic electroluminescence element that emits light from a substrate, a part of the light emitted from the light emitting layer causes total reflection at the interface between the substrate and air, causing a problem of loss of light. In order to solve this problem, prismatic or lens-like processing is applied to the surface of the substrate, or prism sheets, lens sheets, and diffusion sheets are affixed to the surface of the substrate, thereby suppressing total reflection and light extraction efficiency. To improve.
In order to increase the light extraction efficiency, a method of introducing a diffraction grating or a method of introducing a diffusion structure in an interface or any medium that causes total reflection is known.
《有機EL素子100の製造方法》
 本発明の有機EL素子の製造方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極からなる有機EL素子の製造方法を説明する。
<< Method for Manufacturing Organic EL Element 100 >>
As an example of the method for producing an organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
 はじめに、適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10~200nmの膜厚になるように、蒸着やスパッタリング等の薄膜形成方法により形成させて、陽極を作製する。 First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate by a thin film forming method such as vapor deposition or sputtering so as to have a thickness of 1 μm or less, preferably 10 to 200 nm. An anode is produced.
 次に、この上に有機EL素子材料である正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層の有機機能層(有機化合物薄膜)を形成させる。
 有機機能層を形成する工程は、主に、
(i)その有機機能層を構成する塗布液を、支持基板の陽極上に塗布・積層する工程と、(ii)塗布・積層後の塗布液を、乾燥させる工程と、
 で構成される。
 なお、発光層の形成方法(塗布成膜方法)は前述のとおりである。
Next, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an organic functional layer (organic compound thin film) of an electron injection layer, which are organic EL element materials, are formed thereon.
The process of forming the organic functional layer mainly includes
(I) a step of coating and laminating the coating liquid constituting the organic functional layer on the anode of the support substrate; and (ii) a step of drying the coating liquid after coating and laminating;
Consists of.
The light emitting layer forming method (coating film forming method) is as described above.
 (i)の工程では、各層の形成方法として、前記の如く蒸着法、ウェットプロセス(例えば、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法(ラングミュア・ブロジェット(Langmuir Blodgett法)等を挙げることができる。)を用いることができ、少なくとも本発明の発光層はウェットプロセスを用いて形成することが好ましい。
 発光層以外の有機機能層の形成においても、均質な膜が得られやすく、かつピンホールが生成しにくい等の点から、本発明においてはウェットプロセスが好ましく、中でも、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法等の塗布法による成膜が好ましい。
 本発明に係る有機EL材料を溶解または分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、ジメチルホルムアミド(DMF)、ジメチルスルホキシド(DMSO)等の有機溶媒を用いることができる。また分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。
 また、本発明に係る有機EL材料を溶解または分散する調液行程、基材上に塗布されるまでの塗布工程は不活性ガス雰囲気下であることが好ましいが、使用素材により不活性ガス雰囲気下で行わなくとも有機EL素子性能を落とさずに成膜できるため、必ずしも不活性ガス雰囲気下で行わなくても良い場合がある。この場合、製造コストを抑えることができより好ましい。
In the step (i), as a method for forming each layer, as described above, a vapor deposition method, a wet process (for example, spin coating method, casting method, die coating method, blade coating method, roll coating method, ink jet method, printing method, spray coating). Method, curtain coating method, LB method (Langmuir Brodgett method and the like can be used), and at least the light emitting layer of the present invention is preferably formed by a wet process.
In the formation of the organic functional layer other than the light emitting layer, it is preferable to use a wet process in the present invention from the viewpoint that a homogeneous film is easily obtained and pinholes are difficult to be generated, among others, a spin coating method, a casting method, Film formation by a coating method such as a die coating method, a blade coating method, a roll coating method, or an ink jet method is preferable.
Examples of the liquid medium for dissolving or dispersing the organic EL material according to the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene. Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as dimethylformamide (DMF) and dimethylsulfoxide (DMSO) can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
In addition, the preparation step for dissolving or dispersing the organic EL material according to the present invention and the coating process until coating on the base material are preferably performed under an inert gas atmosphere. Since the film can be formed without degrading the performance of the organic EL element even if it is not carried out in step 1, it may not necessarily be carried out in an inert gas atmosphere. In this case, the manufacturing cost can be suppressed, which is more preferable.
 (ii)の工程では、塗布・積層された有機機能層の乾燥を行う。
 ここでいう乾燥とは、塗布直後の膜の溶媒含有量を100%とした場合に、0.2%以下まで低減されることを指す。
 乾燥の手段としては一般的に汎用されているものを使用でき、減圧あるいは加圧乾燥、加熱乾燥、送風乾燥、IR乾燥および電磁波による乾燥などが挙げられる。中でも加熱乾燥が好ましく、有機機能層塗布溶媒の中で最も低沸点の溶媒の沸点以上の温度であり、有機機能層材料のTgの中で最も低Tgである材料の(Tg+20)℃より低い温度で保持することが最も好ましい。本発明において、より具体的には80℃以上150℃以下で保持し乾燥することが好ましく、100℃以上130℃以下で保持し乾燥することがより好ましい。
 塗布・積層後の塗布液を乾燥させる際の雰囲気は、不活性ガス以外の気体の体積濃度が200ppm以下の雰囲気とすることが好ましいが、調液塗布工程と同様に必ずしも不活性ガス雰囲気下で行わなくても良い場合がある。この場合、製造コストを抑えることができより好ましい。
 不活性ガスは好ましくは窒素ガスおよびアルゴンガス等の希ガスであり、製造コスト上最も好ましくは窒素ガスである。
In the step (ii), the coated and laminated organic functional layer is dried.
The term “drying” as used herein refers to a reduction to 0.2% or less when the solvent content of the film immediately after coating is 100%.
As a means for drying, those generally used can be used, and examples thereof include reduced pressure or pressure drying, heat drying, air drying, IR drying, and electromagnetic wave drying. Of these, heat drying is preferable, the temperature is equal to or higher than the boiling point of the solvent having the lowest boiling point in the organic functional layer coating solvent, and the temperature is lower than (Tg + 20) ° C. of the material having the lowest Tg among the Tg of the organic functional layer material. Most preferably, it is held at In the present invention, more specifically, it is preferable to hold and dry at 80 ° C. or higher and 150 ° C. or lower, and more preferable to hold and dry at 100 ° C. or higher and 130 ° C. or lower.
The atmosphere when drying the coating liquid after coating / lamination is preferably an atmosphere having a volume concentration of a gas other than the inert gas of 200 ppm or less, but it is not necessarily in an inert gas atmosphere as in the liquid preparation coating process. It may not be necessary. In this case, the manufacturing cost can be suppressed, which is more preferable.
The inert gas is preferably a rare gas such as nitrogen gas and argon gas, and most preferably nitrogen gas in terms of production cost.
 これらの層の塗布・積層および乾燥工程は枚葉製造であっても、ライン製造であっても良い。更に、乾燥工程はライン上で搬送中に行っても良いが、生産性の観点から堆積あるいはロール状に非接触で巻き取り乾燥しても良い。 The coating / laminating and drying steps of these layers may be single wafer manufacturing or line manufacturing. Further, the drying process may be performed while being conveyed on the line, but from the viewpoint of productivity, it may be deposited or rolled in a non-contact manner in a roll form.
 これらの層を乾燥後、その上に陰極用物質からなる薄膜を、1μm以下、好ましくは50nm~200nmの範囲の膜厚になるように、例えば、蒸着やスパッタリング等の方法により形成させ、陰極を設けることにより、所望の有機EL素子が得られる。
 該加熱処理後に前記密着封止あるいは封止部材と電極、支持基板とを接着剤で接着することで有機EL素子を製造することができる。
After these layers are dried, a thin film made of a cathode material is formed thereon by a method such as vapor deposition or sputtering so as to have a film thickness of 1 μm or less, preferably in the range of 50 nm to 200 nm. By providing, a desired organic EL element can be obtained.
After the heat treatment, the organic EL element can be produced by adhering the close-sealing or sealing member to the electrode and the support substrate with an adhesive.
《用途》
 本発明の有機EL素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。
 発光光源として、例えば、家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源、さらには表示装置を必要とする一般の家庭用電気器具等広い範囲の用途が挙げられるが、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
 本発明の有機EL素子においては、必要に応じ成膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。
<Application>
The organic EL element of the present invention can be used as a display device, a display, and various light emission sources.
Examples of light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, and light sources for optical sensors. Furthermore, it can be used in a wide range of applications such as general household appliances that require a display device, but it can be used effectively as a backlight for a liquid crystal display device combined with a color filter, and as a light source for illumination. it can.
In the organic EL element of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like as needed during film formation. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
 以下、実施例を挙げて本発明を具体的に説明するが、本発明はこれらに限定されるものではない。
 なお、実施例において「部」あるいは「%」の表示を用いるが、特に断りがない限り「質量部」あるいは「質量%」を表す。
EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
In addition, although the display of "part" or "%" is used in an Example, unless otherwise indicated, "part by mass" or "mass%" is represented.
《有機EL素子の作製》
(1)実施例サンプル1の作製
(1.1)ガスバリア性の可撓性フィルムの作製
 可撓性フィルムとして、ポリエチレンナフタレートフィルム(帝人デュポン社製フィルム、以下、PENと略記する)の第1電極を形成する側の全面に、特開2004-68143号に記載の構成からなる大気圧プラズマ放電処理装置を用いて、連続して可撓性フィルム上に、SiOxからなる無機物のガスバリア膜を厚さ500nmとなるように形成し、酸素透過度0.001ml/m/day以下、水蒸気透過度0.001g/m/day以下のガスバリア性の可撓性フィルムを作製した。
<< Production of organic EL element >>
(1) Production of Example Sample 1 (1.1) Production of Gas Barrier Flexible Film First of polyethylene naphthalate film (Teijin DuPont film, hereinafter abbreviated as PEN) as the flexible film. An inorganic gas barrier film made of SiOx is continuously formed on the flexible film on the entire surface on the electrode forming side using an atmospheric pressure plasma discharge treatment apparatus having the structure described in JP-A-2004-68143. A gas barrier flexible film having an oxygen permeability of 0.001 ml / m 2 / day or less and a water vapor permeability of 0.001 g / m 2 / day or less was formed.
(1.2)第1電極層の形成
 準備したガスバリア性の可撓性フィルム上に厚さ120nmのITO(インジウムチンオキシド)をスパッタ法により成膜し、フォトリソグラフィー法によりパターニングを行い、第1電極層(陽極)を形成した。
 なお、パターンは発光面積が50mm平方になるようなパターンとした。
(1.2) Formation of first electrode layer A 120 nm thick ITO (Indium Tin Oxide) film is formed on the prepared gas barrier flexible film by sputtering and patterned by photolithography. An electrode layer (anode) was formed.
The pattern was such that the light emission area was 50 mm square.
(1.3)正孔注入層の形成
 パターニング後のITO基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
 この基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSSと略記、Bayer製、Baytron P Al 4083)を純水で70%に希釈した溶液を、3000rpm、30秒でスピンコート法により製膜し、200℃で1時間保持し、膜厚30nmの正孔注入層を設けた。
(1.3) Formation of hole injection layer The patterned ITO substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
On this substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (abbreviated as PEDOT / PSS, manufactured by Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. The film was formed by spin coating and held at 200 ° C. for 1 hour to provide a hole injection layer having a thickness of 30 nm.
(1.4)正孔輸送層の形成
 この基板を、窒素ガス(グレードG1)を用いた窒素雰囲気下に移し、前記正孔輸送材料である例示化合物(60)(Mw=80,000)をクロロベンゼンに0.5%溶解した溶液を、1500rpm、30秒でスピンコート法により製膜し、160℃で30分間保持し、膜厚30nmの正孔輸送層とした。
(1.4) Formation of hole transport layer This substrate was transferred to a nitrogen atmosphere using nitrogen gas (grade G1), and exemplary compound (60) (Mw = 80,000) as the hole transport material was transferred. A solution prepared by dissolving 0.5% in chlorobenzene was formed by spin coating at 1500 rpm for 30 seconds, and kept at 160 ° C. for 30 minutes to form a 30 nm-thick hole transport layer.
(1.5)発光層の形成
 次いで、下記組成の発光層組成物を1500rpm、30秒でスピンコート法によりそれぞれ製膜し、120℃で30分間保持し、膜厚40nmの発光層を形成した。
〈発光層組成物〉
  ホスト材料…例示化合物a-6  13.95質量部
  ドーパント材料…例示化合物D-24:D-25:D-26:D-51:D-55等質量混合物  2.45質量部
  ドーパント材料…例示化合物D-1  0.025質量部
  ドーパント材料…例示化合物D-10  0.025質量部
  溶媒種…トルエン:酢酸イソプロピル=1:1  2,000質量部
 なお、発光層組成物の塗布中は環境温度を30℃に保持し、発光層組成物の塗布終了から5秒後(5秒以内)にその塗布膜に乾燥風をあてて塗布膜を乾燥させた。
(1.5) Formation of Light-Emitting Layer Next, a light-emitting layer composition having the following composition was formed by a spin coating method at 1500 rpm for 30 seconds and held at 120 ° C. for 30 minutes to form a light-emitting layer having a thickness of 40 nm. .
<Light emitting layer composition>
Host material ... Exemplified compound a-6 13.95 parts by mass Dopant material ... Exemplified compound D-24: D-25: D-26: D-51: D-55 equimolar mixture 2.45 parts by mass Dopant material ... Exemplified compound D-1 0.025 parts by mass Dopant material ... Exemplary compound D-10 0.025 parts by mass Solvent species ... Toluene: isopropyl acetate = 1: 1 2,000 parts by mass The coating film was kept at 30 ° C., and after 5 seconds (within 5 seconds) from the end of the application of the light emitting layer composition, the coating film was dried by applying dry air to the coating film.
(1.6)電子輸送層の形成
 続いて、20mgの一般式(A)で表される化合物である例示化合物(化合物A)を、4mlのテトラフルオロプロパノール(TFPO)に溶解した溶液を、1500rpm、30秒でスピンコート法により製膜し、120℃で30分間保持し、膜厚30nmの電子輸送層とした。
(1.6) Formation of Electron Transport Layer Subsequently, a solution obtained by dissolving 20 mg of the exemplified compound (compound A), which is a compound represented by the general formula (A), in 4 ml of tetrafluoropropanol (TFPO) is 1500 rpm. The film was formed by spin coating in 30 seconds and held at 120 ° C. for 30 minutes to form an electron transport layer having a thickness of 30 nm.
Figure JPOXMLDOC01-appb-C000022
 
Figure JPOXMLDOC01-appb-C000022
 
(1.7)電子注入層、陰極の形成
 続いて、基板を大気に曝露することなく真空蒸着装置へ取り付けた。
 また、モリブデン製抵抗加熱ボートにフッ化ナトリウムおよびフッ化カリウムを入れたものを真空蒸着装置に取り付け、真空槽を4×10-5Paまで減圧した後、前記ボートに通電して加熱してフッ化ナトリウムを0.02nm/秒で前記電子輸送層上に膜厚1nmの薄膜を形成し、続けて同様にフッ化カリウムを0.02nm/秒でフッ化ナトリウム上に膜厚1.5nmの電子注入層を形成した。
 引き続き、アルミニウム100nmを蒸着して陰極を形成した。
(1.7) Formation of electron injection layer and cathode Subsequently, the substrate was attached to a vacuum deposition apparatus without being exposed to the atmosphere.
In addition, a molybdenum resistance heating boat containing sodium fluoride and potassium fluoride is attached to a vacuum deposition apparatus, and after the vacuum chamber is depressurized to 4 × 10 −5 Pa, the boat is energized and heated to heat the boat. A thin film having a thickness of 1 nm is formed on the electron transport layer at a rate of 0.02 nm / second with sodium fluoride, and then an electron with a thickness of 1.5 nm on the sodium fluoride at a rate of 0.02 nm / second in the same manner. An injection layer was formed.
Subsequently, 100 nm of aluminum was deposited to form a cathode.
(1.8)封止及び有機EL素子の作製
 引き続き、市販のロールラミネート装置を用いて封止部材を接着し、実施例サンプル1(有機EL素子)を製作した。
(1.8) Sealing and Production of Organic EL Element Subsequently, a sealing member was bonded using a commercially available roll laminating apparatus to produce Example Sample 1 (organic EL element).
 詳しくは、封止部材として、可撓性の厚み30μmのアルミニウム箔(東洋アルミニウム株式会社製)に、ポリエチレンテレフタレート(PET)フィルム(12μm厚)をドライラミネーション用の接着剤(2液反応型のウレタン系接着剤)を用いラミネートした(接着剤層の厚み1.5μm)ものを用いた。
 アルミニウム面に封止用接着剤として、熱硬化性接着剤を、ディスペンサを使用してアルミ箔の接着面(つや面)に沿って厚み20μmで均一に塗布した。これを100Pa以下の真空下で12時間乾燥させた。さらに露点温度が-80℃以下、酸素濃度0.8ppmの窒素雰囲気下へ移動し、12時間以上乾燥させ、封止用接着剤の含水率を100ppm以下となるように調整した。
 熱硬化接着剤としては下記の(A)~(C)を混合したエポキシ系接着剤を用いた。
 (A)ビスフェノールAジグリシジルエーテル(DGEBA)
 (B)ジシアンジアミド(DICY)
 (C)エポキシアダクト系硬化促進剤
Specifically, as a sealing member, a flexible aluminum foil (made by Toyo Aluminum Co., Ltd.) having a thickness of 30 μm, a polyethylene terephthalate (PET) film (12 μm thickness) and an adhesive for dry lamination (two-component reaction type urethane) (Adhesive layer thickness 1.5 μm) was used.
As a sealing adhesive, a thermosetting adhesive was uniformly applied to the aluminum surface with a thickness of 20 μm along the adhesive surface (shiny surface) of the aluminum foil using a dispenser. This was dried under a vacuum of 100 Pa or less for 12 hours. Furthermore, it moved to a nitrogen atmosphere with a dew point temperature of −80 ° C. or lower and an oxygen concentration of 0.8 ppm, dried for 12 hours or longer, and adjusted the water content of the sealing adhesive to 100 ppm or lower.
As the thermosetting adhesive, an epoxy adhesive mixed with the following (A) to (C) was used.
(A) Bisphenol A diglycidyl ether (DGEBA)
(B) Dicyandiamide (DICY)
(C) Epoxy adduct curing accelerator
 以上のようにして、図1に記載の形態になるよう、封止基板を、取り出し電極および電極リードの接合部を覆うようにして密着・配置して、圧着ロールを用いて厚着条件、圧着ロール温度120℃、圧力0.5MPa、装置速度0.3m/minで密着封止して、実施例サンプル1(有機EL素子)を作製した。 As described above, the sealing substrate is closely attached and arranged so as to cover the joint portion between the extraction electrode and the electrode lead so as to be in the form shown in FIG. Example sample 1 (organic EL element) was manufactured by closely sealing at a temperature of 120 ° C., a pressure of 0.5 MPa, and an apparatus speed of 0.3 m / min.
(2)実施例サンプル2~7の作製
 実施例サンプル1の作製において、発光層の塗布環境(塗布温度や塗布終了から乾燥開始までの時間、塗布液の溶媒種)を、それぞれ表1に記載の環境に変更した。
 それ以外は実施例サンプル1と同様とした。
(2) Production of Example Samples 2 to 7 In the production of Example Sample 1, the application environment of the light-emitting layer (application temperature, time from the end of application to the start of drying, solvent type of application liquid) is shown in Table 1, respectively The environment was changed.
Other than that was the same as Example Sample 1.
(3)実施例サンプル8の作製
 実施例サンプル1の作製において、発光層の塗布環境(塗布温度や塗布終了から乾燥開始までの時間、塗布液の溶媒種)を、それぞれ表1に記載の環境に変更するとともに、ホスト材料を、a-1、a-6、a-41の等質量混合物とした。
 それ以外は実施例サンプル1と同様とした。
(3) Production of Example Sample 8 In the production of Example Sample 1, the application environment of the light emitting layer (application temperature, time from the end of application to the start of drying, solvent type of the application liquid) are shown in Table 1, respectively. And the host material was an equal mass mixture of a-1, a-6, and a-41.
Other than that was the same as Example Sample 1.
(4)比較例サンプル9の作製
 実施例サンプル1の作製において、発光層の塗布環境を、表1に記載の環境に変更した。
 それ以外は実施例サンプル1と同様とした。
(4) Production of Comparative Sample 9 In production of Example Sample 1, the application environment of the light emitting layer was changed to the environment shown in Table 1.
Other than that was the same as Example Sample 1.
(5)比較例サンプル10の作製
 実施例サンプル1の作製において、電子輸送層の塗布液を、下記電子輸送層組成物1とした。
〈電子輸送層組成物1〉
  電子輸送材料…例示化合物(化合物A)  19.88mg
  ドーパント材料…例示化合物D-55  0.12mg
  溶媒種…テトラフルオロプロパノール(TFPO)  4.000ml
 それ以外は実施例サンプル1と同様とした。
(5) Preparation of Comparative Sample 10 In the preparation of Example Sample 1, the electron transport layer coating solution was used as the electron transport layer composition 1 below.
<Electron transport layer composition 1>
Electron transport material ... Exemplified compound (Compound A) 19.88 mg
Dopant material ... Exemplary compound D-55 0.12 mg
Solvent type: Tetrafluoropropanol (TFPO) 4.0000 ml
Other than that was the same as Example Sample 1.
(6)比較例サンプル11の作製
 実施例サンプル1の作製において、正孔輸送層の塗布液を、下記正孔輸送層組成物1とした。
〈正孔輸送層組成物1〉
  正孔輸送材料…例示化合物(60)  24.97mg
  ドーパント材料…例示化合物D-55  0.03mg
  溶媒種…クロロベンゼン  5.000ml
 それ以外は実施例サンプル1と同様とした。
(6) Preparation of Comparative Sample 11 In preparation of Example Sample 1, the hole transport layer composition 1 was used as the hole transport layer coating solution.
<Hole transport layer composition 1>
Hole transport material ... Exemplified compound (60) 24.97mg
Dopant material: Exemplified compound D-55 0.03 mg
Solvent type ... chlorobenzene 5.00ml
Other than that was the same as Example Sample 1.
(7)比較例サンプル12の作製
 実施例サンプル1の作製において、正孔輸送層の塗布液を、下記正孔輸送層組成物2とした。
〈正孔輸送層組成物2〉
  正孔輸送材料…例示化合物(60)  24.94mg
  ドーパント材料…例示化合物D-55  0.06mg
  溶媒種…クロロベンゼン  5.000ml
 それ以外は実施例サンプル1と同様とした。
(7) Preparation of Comparative Sample 12 In the preparation of Example Sample 1, the hole transport layer composition 2 was used as the hole transport layer coating solution.
<Hole transport layer composition 2>
Hole transport material ... Exemplified compound (60) 24.94mg
Dopant material: Exemplified compound D-55 0.06 mg
Solvent type ... chlorobenzene 5.00ml
Other than that was the same as Example Sample 1.
(8)比較例サンプル13の作製
 実施例サンプル1の作製において、電子輸送層の塗布液を、下記電子輸送層組成物2とした。
〈電子輸送層組成物2〉
  電子輸送材料…例示化合物(化合物A)  19.64mg
  ドーパント材料…例示化合物D-55  0.36mg
  溶媒種…テトラフルオロプロパノール(TFPO)  4.000ml
 それ以外は実施例サンプル1と同様とした。
(8) Preparation of Comparative Sample 13 In preparation of Example Sample 1, the electron transport layer coating solution was used as the following electron transport layer composition 2.
<Electron transport layer composition 2>
Electron transport material ... Exemplified compound (Compound A) 19.64 mg
Dopant material: Exemplified compound D-55 0.36 mg
Solvent type: Tetrafluoropropanol (TFPO) 4.0000 ml
Other than that was the same as Example Sample 1.
Figure JPOXMLDOC01-appb-T000023
 
Figure JPOXMLDOC01-appb-T000023
 
《有機EL素子の評価》
 実施例サンプル1~8および比較例サンプル9~13について、(1)発光層等の膜密度の測定と、(2)~(4)の各評価とを、行った。
<< Evaluation of organic EL elements >>
Example Samples 1 to 8 and Comparative Samples 9 to 13 were subjected to (1) measurement of the film density of the light emitting layer and the evaluations (2) to (4).
(1)膜密度の測定
 実施例サンプル1~8および比較例サンプル9~13の発光層等の膜密度を、前記の測定方法で測定した。その結果を表2に示す。
 表2中、「ρHIL」は正孔注入層の膜密度を、「ρHT」は正孔輸送層の膜密度を、「ρEM」は発光層の膜密度を、「ρET」は電子輸送層の膜密度を、それぞれ示している。「Δρ(EM-HT)」は発光層の膜密度と正孔輸送層の膜密度との差である(ρEM-ρHT)を、「Δρ(EM-ET)」は発光層の膜密度と電子輸送層の膜密度との差である(ρEM-ρET)を、それぞれ示している。
(1) Measurement of film density The film densities of the light emitting layers and the like of Example Samples 1 to 8 and Comparative Samples 9 to 13 were measured by the measurement method described above. The results are shown in Table 2.
In Table 2, “ρHIL” represents the film density of the hole injection layer, “ρHT” represents the film density of the hole transport layer, “ρEM” represents the film density of the light emitting layer, and “ρET” represents the film of the electron transport layer. Each density is shown. “Δρ (EM-HT)” is the difference between the film density of the light emitting layer and the film density of the hole transport layer (ρEM−ρHT), and “Δρ (EM-ET)” is the film density of the light emitting layer and the electron (ΡEM−ρET), which is the difference from the film density of the transport layer, is shown.
(2)発光効率の評価
 各サンプルを、室温環境(約23~25℃)でかつ1000cd/mの定輝度条件下で点灯させ、分光放射輝度計CS-2000(コニカミノルタセンシング社製)を用いて、各サンプルの発光輝度を測定し、発光輝度1000cd/mにおける発光効率(電流は一定)を求めた。求めた結果を表2に示す。
 表2では、比較例サンプル9の発光効率を「100」として、実施例サンプル1~8および比較例サンプル10~13の発光輝度を、それに対する相対値で示している。
(2) Evaluation of luminous efficiency Each sample was lighted in a room temperature environment (about 23 to 25 ° C.) and under a constant luminance condition of 1000 cd / m 2 , and a spectral radiance meter CS-2000 (manufactured by Konica Minolta Sensing) was used. The light emission luminance of each sample was measured, and the light emission efficiency (current is constant) at the light emission luminance of 1000 cd / m 2 was determined. Table 2 shows the obtained results.
In Table 2, assuming that the luminous efficiency of the comparative example sample 9 is “100”, the luminous luminances of the example samples 1 to 8 and the comparative example samples 10 to 13 are shown as relative values.
(3)発光寿命の評価
 各サンプルを半径5cmの円柱に巻きつけ、その後各サンプルを折り曲げた状態で連続駆動させ、上記分光放射輝度計CS-2000を用いて輝度を測定し、測定した輝度が半減する時間(LT50)を求めた。駆動条件は、連続駆動開始時に4000cd/mとなる電流値とした。
 比較例サンプル9のLT50を「100」とした相対値を求め、これを連続駆動安定性の尺度とした。
 数値が大きいほど、連続駆動安定性に優れている(長寿命である)ことを表す。
(3) Evaluation of luminous lifetime Each sample was wound around a cylinder with a radius of 5 cm, and then continuously driven in a state where each sample was bent, and the luminance was measured using the spectral radiance meter CS-2000. The time to halve (LT50) was determined. The driving condition was set to a current value of 4000 cd / m 2 at the start of continuous driving.
The relative value which made LT50 of the comparative example sample 9 "100" was calculated | required, and this was made into the scale of continuous drive stability.
The larger the value, the better the continuous driving stability (long life).
(4)輝度ムラの評価
 各サンプルを、室温環境(約23~25℃)でかつ1000cd/m2の定輝度条件下で点灯させ、目視評価し、下記基準の5段階でランク付けを行った。
  「5」:輝度ムラなし
  「4」:輝度ムラが極僅かに確認されるレベル
  「3」:輝度ムラが確認されるが0.3m以上離れると識別できないレベル
  「2」:輝度ムラが確認され、1.0m以上離れると識別できないレベル
  「1」:輝度ムラが確認され、1.0m以上離れても認識されるレベル
(4) Evaluation of luminance unevenness Each sample was lighted under a room temperature environment (about 23 to 25 ° C.) and under a constant luminance condition of 1000 cd / m 2, visually evaluated, and ranked according to the following five criteria.
“5”: No brightness unevenness “4”: Level where brightness unevenness is confirmed only slightly “3”: Level where brightness unevenness is confirmed but cannot be identified when 0.3 m or more away “2”: Brightness unevenness is confirmed , Level that cannot be discriminated when separated by 1.0 m or more “1”: Level that luminance unevenness is confirmed and recognized even if separated by 1.0 m or more
Figure JPOXMLDOC01-appb-T000024
 
Figure JPOXMLDOC01-appb-T000024
 
(4)まとめ
 表2に示すとおり、実施例サンプル1~8と比較例サンプル9~13(特には比較例サンプル9)との比較から、実施例サンプル1~8は各評価における結果が良好であった。
 以上から、発光効率の向上、発光寿命の向上および輝度ムラの抑制を図る上では、条件式(i),(ii)の両方を充足させる(Δρ(EM-HT)の値とΔρ(EM-ET)の値とをともに0.03以上とする)ことが有用であることがわかる。
(4) Summary As shown in Table 2, comparison between Example Samples 1 to 8 and Comparative Example Samples 9 to 13 (particularly Comparative Example Sample 9) shows that Example Samples 1 to 8 have good results in each evaluation. there were.
From the above, in order to improve the light emission efficiency, the light emission lifetime, and the suppression of luminance unevenness, both of the conditional expressions (i) and (ii) are satisfied (Δρ (EM−HT) and Δρ (EM− It can be seen that it is useful to set both the value of (ET) to 0.03 or more.
 本発明は発光効率と発光寿命とを向上させ、輝度ムラの発生を抑制するのに特に好適に利用することができる。 The present invention can be particularly suitably used for improving luminous efficiency and luminous lifetime and suppressing occurrence of luminance unevenness.
 1 可撓性支持基板
 2 陽極
 3 正孔注入層
 4 正孔輸送層
 5 発光層
 6 電子輸送層
 7 電子注入層
 8 陰極
 9 封止接着剤
 10 可撓性封止部材
 20 有機機能層
 100 有機エレクトロルミネッセンス素子
DESCRIPTION OF SYMBOLS 1 Flexible support substrate 2 Anode 3 Hole injection layer 4 Hole transport layer 5 Light emitting layer 6 Electron transport layer 7 Electron injection layer 8 Cathode 9 Sealing adhesive 10 Flexible sealing member 20 Organic functional layer 100 Organic electro Luminescence element

Claims (11)

  1.  基板と、
     前記基板上に形成された陽極および陰極と、
     前記陽極と前記陰極との間に形成された発光層と、
     前記発光層と前記陽極との間に形成された正孔輸送層と、
     前記発光層と前記陰極との間に形成された電子輸送層と、
     を備える有機エレクトロルミネッセンス素子において、
     前記発光層の膜密度をρEMと、前記正孔輸送層の膜密度をρHTと、前記電子輸送層の膜密度をρETと、前記発光層の膜密度と前記正孔輸送層の膜密度との差をΔρ(EM-HT)と、前記発光層の膜密度と前記電子輸送層の膜密度との差をΔρ(EM-ET)とした場合に、条件式(i),(ii)の両方を満たしていることを特徴とする有機エレクトロルミネッセンス素子。
       Δρ(EM-HT)=(ρEM-ρHT)≧0.03 … (i)
       Δρ(EM-ET)=(ρEM-ρET)≧0.03 … (ii)
    A substrate,
    An anode and a cathode formed on the substrate;
    A light emitting layer formed between the anode and the cathode;
    A hole transport layer formed between the light emitting layer and the anode;
    An electron transport layer formed between the light emitting layer and the cathode;
    In an organic electroluminescence device comprising:
    The film density of the light emitting layer is ρEM, the film density of the hole transport layer is ρHT, the film density of the electron transport layer is ρET, and the film density of the light emitting layer and the film density of the hole transport layer are When the difference between Δρ (EM−HT) and the difference between the film density of the light emitting layer and the film density of the electron transport layer is Δρ (EM−ET), both conditional expressions (i) and (ii) An organic electroluminescence element characterized by satisfying
    Δρ (EM−HT) = (ρEM−ρHT) ≧ 0.03 (i)
    Δρ (EM−ET) = (ρEM−ρET) ≧ 0.03 (ii)
  2.  請求項1に記載の有機エレクトロルミネッセンス素子において、
     ρEMの値が1.40以上であることを特徴とする有機エレクトロルミネッセンス素子。
    The organic electroluminescent device according to claim 1,
    An organic electroluminescence device having a ρEM value of 1.40 or more.
  3.  請求項1に記載の有機エレクトロルミネッセンス素子において、
     前記陽極および前記陰極のうち前記基板側に配置された電極と前記発光層との間には、前記正孔輸送層または前記電子輸送層を含む複数の非発光層が形成され、
     前記発光層、前記正孔輸送層、前記電子輸送層および前記非発光層の各膜密度のなかでは、ρEMの値が最も大きく、
     前記非発光層は前記発光層に近い層ほど膜密度が大きくなることを特徴とする有機エレクトロルミネッセンス素子。
    The organic electroluminescent device according to claim 1,
    A plurality of non-light-emitting layers including the hole-transport layer or the electron-transport layer are formed between the light-emitting layer and the electrode disposed on the substrate side among the anode and the cathode,
    Among the film densities of the light emitting layer, the hole transport layer, the electron transport layer, and the non-light emitting layer, the value of ρEM is the largest,
    The non-light-emitting layer is an organic electroluminescence device characterized in that the layer density closer to the light-emitting layer increases.
  4.  請求項1に記載の有機エレクトロルミネッセンス素子において、
     前記発光層は、発光材料が少なくとも1種の溶媒に分散された塗布液を用いて塗布法で成膜されていることを特徴とする有機エレクトロルミネッセンス素子。
    The organic electroluminescent device according to claim 1,
    The organic light-emitting device, wherein the light-emitting layer is formed by a coating method using a coating liquid in which a light-emitting material is dispersed in at least one solvent.
  5.  請求項4に記載の有機エレクトロルミネッセンス素子において、
     前記塗布液が、35℃以上の環境で塗布されていることを特徴とする有機エレクトロルミネッセンス素子。
    In the organic electroluminescent element according to claim 4,
    An organic electroluminescence element, wherein the coating liquid is applied in an environment of 35 ° C. or higher.
  6.  請求項4に記載の有機エレクトロルミネッセンス素子において、
     前記塗布液が、塗布されてから3秒以内に乾燥処理に供されていることを特徴とする有機エレクトロルミネッセンス素子。
    In the organic electroluminescent element according to claim 4,
    An organic electroluminescence device, wherein the coating solution is subjected to a drying treatment within 3 seconds after being applied.
  7.  請求項4に記載の有機エレクトロルミネッセンス素子において、
     前記塗布液の溶媒が沸点100℃以下の低沸点溶媒であることを特徴とする有機エレクトロルミネッセンス素子。
    In the organic electroluminescent element according to claim 4,
    An organic electroluminescence device, wherein the solvent of the coating solution is a low boiling point solvent having a boiling point of 100 ° C. or lower.
  8.  請求項7に記載の有機エレクトロルミネッセンス素子において、
     前記塗布液の溶媒が酢酸イソプロピルまたは酢酸nプロピルであることを特徴とする有機エレクトロルミネッセンス素子。
    The organic electroluminescence device according to claim 7,
    An organic electroluminescence device, wherein the solvent of the coating solution is isopropyl acetate or n-propyl acetate.
  9.  請求項1に記載の有機エレクトロルミネッセンス素子において、
     前記発光層には、ホスト材料が少なくとも3種以上含有されていることを特徴とする有機エレクトロルミネッセンス素子。
    The organic electroluminescent device according to claim 1,
    The light emitting layer contains at least three or more kinds of host materials.
  10.  請求項1に記載の有機エレクトロルミネッセンス素子を用いたことを特徴とする表示装置。 A display device using the organic electroluminescence element according to claim 1.
  11.  請求項1に記載の有機エレクトロルミネッセンス素子を用いたことを特徴とする照明装置。 An illuminating device using the organic electroluminescence element according to claim 1.
PCT/JP2012/065691 2011-08-29 2012-06-20 Organic electroluminescence element, display device, and illumination device WO2013031346A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020718A1 (en) * 2005-08-18 2007-02-22 Konica Minolta Holdings, Inc. Organic electroluminescent element, display device, and lighting device
JP2007059687A (en) * 2005-08-25 2007-03-08 Konica Minolta Holdings Inc Organic electroluminescence element, display device, and illuminator
JP2007059244A (en) * 2005-08-25 2007-03-08 Konica Minolta Holdings Inc Organic electroluminescence element, indicating device and lighting device
JP2007110097A (en) * 2005-09-14 2007-04-26 Konica Minolta Holdings Inc Organic electroluminescence element, method of manufacturing same, display, and lighting fixture
JP2007234934A (en) * 2006-03-02 2007-09-13 Konica Minolta Holdings Inc Organic electroluminescence element, method for manufacturing organic electroluminescence element, display, and luminaire

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020718A1 (en) * 2005-08-18 2007-02-22 Konica Minolta Holdings, Inc. Organic electroluminescent element, display device, and lighting device
JP2007059687A (en) * 2005-08-25 2007-03-08 Konica Minolta Holdings Inc Organic electroluminescence element, display device, and illuminator
JP2007059244A (en) * 2005-08-25 2007-03-08 Konica Minolta Holdings Inc Organic electroluminescence element, indicating device and lighting device
JP2007110097A (en) * 2005-09-14 2007-04-26 Konica Minolta Holdings Inc Organic electroluminescence element, method of manufacturing same, display, and lighting fixture
JP2007234934A (en) * 2006-03-02 2007-09-13 Konica Minolta Holdings Inc Organic electroluminescence element, method for manufacturing organic electroluminescence element, display, and luminaire

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