WO2013018432A1 - Procédé de fabrication et dispositif de fabrication d'un circuit à guides d'ondes optiques - Google Patents

Procédé de fabrication et dispositif de fabrication d'un circuit à guides d'ondes optiques Download PDF

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Publication number
WO2013018432A1
WO2013018432A1 PCT/JP2012/064580 JP2012064580W WO2013018432A1 WO 2013018432 A1 WO2013018432 A1 WO 2013018432A1 JP 2012064580 W JP2012064580 W JP 2012064580W WO 2013018432 A1 WO2013018432 A1 WO 2013018432A1
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Prior art keywords
optical waveguide
manufacturing
waveguide circuit
light
ultraviolet light
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PCT/JP2012/064580
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English (en)
Japanese (ja)
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泰芳 内田
津田　寿昭
奈良　一孝
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古河電気工業株式会社
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Publication of WO2013018432A1 publication Critical patent/WO2013018432A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections

Definitions

  • the present invention relates to an optical waveguide circuit manufacturing method and manufacturing apparatus.
  • MZI Mach-Zehnder interferometer
  • PLCs planar lightwave circuits
  • An optical interferometer element such as a diffraction grating (Arrayed-Waveguide Grating: AWG) is used.
  • These optical waveguide circuits include an optical waveguide including a core for guiding light and a clad formed around the core.
  • Such an optical interferometer element utilizes the interference action of light, if there is a manufacturing error in the optical path length of the optical waveguide, desired characteristics may not be obtained. Therefore, when manufacturing the optical interferometer element, there is a case where after the waveguide structure is manufactured, a step of irradiating a part of the core with ultraviolet light to increase the refractive index of the core. This process is also called a trimming process. Since the optical path length of the optical waveguide can be adjusted by this trimming process, the characteristics of the element can be adjusted.
  • the core contains germanium (Ge)
  • Ge absorbs ultraviolet light and changes the refractive index of the silica-based glass, which is a medium. Therefore, the refractive index of the core is increased by irradiation with ultraviolet light. Can do.
  • an ultraviolet light absorption coefficient of Ge contained in a core is increased by performing a hydrogen treatment process in which a MZI element having a waveguide structure is impregnated with hydrogen and then subjected to a heat treatment. This increases the sensitivity of the core to light-induced refractive index changes. Thereafter, a part of the core is irradiated with a laser beam of a KrF excimer laser (wavelength 248 nm) to adjust the characteristics of the element.
  • An ArF excimer laser (wavelength 193 nm) may be used as the ultraviolet light source.
  • a method for adjusting the characteristics of an element by irradiating an optical waveguide with ultraviolet light is not limited to an optical interferometer element (see Patent Documents 2 to 4).
  • the ultraviolet treatment for example, absorption at a wavelength of 248 nm
  • the refractive index of the cladding may change when the subsequent ultraviolet light irradiation is performed. Therefore, if there is a variation in the thickness of the clad or the content of B or P between elements or within the element, the element characteristics after adjustment may vary as in the case of the core, or desired characteristics may not be obtained. There is a further problem of being there.
  • the present invention has been made in view of the above, and an object of the present invention is to provide a method and an apparatus for manufacturing an optical waveguide circuit capable of adjusting characteristics by ultraviolet light irradiation with high accuracy.
  • an optical waveguide circuit manufacturing method includes a core containing a dopant that absorbs ultraviolet light and changes a refractive index of a medium, and a periphery of the core.
  • An ultraviolet light irradiation step of irradiating the core of the optical waveguide circuit comprising the clad formed with ultraviolet light, and a light emission amount measurement step of measuring the light emission amount from the dopant, and integrating the measured light emission amount The characteristics of the optical waveguide circuit are adjusted based on the values.
  • the irradiation of the ultraviolet light is stopped when the integrated value of the measured light emission amount reaches a predetermined value.
  • the dopant is germanium in the above invention.
  • the wavelength of the ultraviolet light is 193 nm in the above invention.
  • the wavelength of the ultraviolet light is 248 nm.
  • the cladding of the optical waveguide contains boron or phosphorus.
  • An optical waveguide circuit manufacturing apparatus includes an optical waveguide circuit including a core containing a dopant that absorbs ultraviolet light and changes a refractive index of a medium, and a clad formed around the core.
  • An ultraviolet light source for irradiating the core with ultraviolet light and a light emission amount measuring device for measuring the light emission amount from the dopant are provided, and the characteristics of the optical waveguide circuit are adjusted based on the integrated value of the measured light emission amount.
  • the optical waveguide circuit manufacturing apparatus further includes a controller that stops the irradiation of the ultraviolet light when the integrated value of the measured light emission amount reaches a predetermined value.
  • the dopant is germanium.
  • the ultraviolet light has a wavelength of 193 nm.
  • the wavelength of the ultraviolet light is 248 nm.
  • the clad of the optical waveguide contains boron or phosphorus.
  • the present invention it is possible to adjust the characteristics of the optical waveguide circuit by ultraviolet light irradiation with high accuracy.
  • FIG. 1 is a schematic configuration diagram of a manufacturing apparatus for performing the method of manufacturing an optical waveguide circuit according to the first embodiment.
  • FIG. 2 is a schematic plan view of one 90-degree hybrid element formed on the wafer shown in FIG.
  • FIG. 3A is a schematic cross-sectional view for explaining changes when a 90-degree hybrid element is irradiated with laser light.
  • FIG. 3B is a schematic cross-sectional view illustrating a change when the 90-degree hybrid element is irradiated with laser light.
  • FIG. 4 is a diagram showing the relationship between the laser beam irradiation time and the phase shift amount in different 90-degree hybrid element samples manufactured from the same wafer.
  • FIG. 1 is a schematic configuration diagram of a manufacturing apparatus for performing the method of manufacturing an optical waveguide circuit according to the first embodiment.
  • FIG. 2 is a schematic plan view of one 90-degree hybrid element formed on the wafer shown in FIG.
  • FIG. 3A is a schematic cross-sectional view for explaining changes when a
  • FIG. 5 is a diagram showing the relationship between the laser beam irradiation time and the phase shift amount in a sample of a 90-degree hybrid element fabricated from two different wafers.
  • FIG. 6 is a diagram showing the relationship between the light emission amount and the phase shift amount in samples of 90-degree hybrid elements manufactured from different wafers.
  • FIG. 7 is a schematic configuration diagram of a manufacturing apparatus for performing the method of manufacturing an optical waveguide circuit according to the second embodiment.
  • FIG. 8 is a schematic plan view of one AWG element formed on the wafer shown in FIG.
  • FIG. 9A is a schematic cross-sectional view illustrating a change when the AWG element is irradiated with laser light.
  • FIG. 9B is a schematic cross-sectional view illustrating a change when the AWG element is irradiated with laser light.
  • FIG. 10 is a diagram showing a transmission spectrum before and after adjustment between the input optical waveguide and a predetermined output waveguide when an ArF excimer laser is used.
  • FIG. 11 is a diagram showing the relationship between the light emission amount and the wavelength shift amount in samples of different AWG elements manufactured from the same wafer.
  • FIG. 12 is a diagram illustrating a transmission spectrum before and after adjustment between the input optical waveguide and a predetermined output waveguide when a KrF excimer laser is used.
  • FIG. 1 is a schematic configuration diagram of a manufacturing apparatus for performing the method of manufacturing an optical waveguide circuit according to the first embodiment.
  • the manufacturing apparatus 10 includes a KrF excimer laser 11, a mirror system 12a, a collimating lens system 13, a mirror 12b, a moving device 14, a light receiver 15, and a measurement controller 16. I have.
  • the KrF excimer laser 11 outputs laser light L1 having a wavelength of 248 nm, which is ultraviolet light.
  • the mirror system 12a, the collimating lens system 13, and the mirror 12b are arranged to collimate the laser light L1 and guide it to the wafer W1 placed on the moving device 14.
  • the beam diameter of the laser light L1 is adjusted to, for example, about 10 mm ⁇ 15 mm by the mirror system 12a, the collimating lens system 13, and the mirror 12b.
  • the moving device 14 is configured to place the wafer W1 on which a large number of 90-degree hybrid elements, which are optical waveguide circuits, are placed, and to move the wafer W1 in the left-right direction of the drawing sheet and in the direction perpendicular to the drawing sheet. Has been. As a result, the moving device 14 can adjust the position of the wafer W1 so that the laser light L1 is irradiated to a desired location on the wafer W1. Note that a shadow mask M1 is formed on the surface of the wafer W1 to cover a portion other than the place where the laser beam L1 is to be irradiated.
  • the light receiver 15 includes a photodiode, for example, and is arranged so as to receive light emitted from the 90-degree hybrid element.
  • the measurement controller 16 is connected to the light receiver 15.
  • the measurement controller 16 calculates an illuminance meter that measures the amount of light emitted from the 90-degree hybrid element based on the amount of light received by the light receiver 15 and an integrated value of the emitted light amount, and based on the integrated value, a KrF excimer laser 11 for controlling the controller 11.
  • FIG. 2 is a schematic plan view of one 90-degree hybrid element formed on the wafer shown in FIG.
  • one 90-degree hybrid element 1 includes input optical waveguides 1a and 1b, a Y branch optical waveguide 1c connected to the input optical waveguide 1a, and a Y branch optical waveguide 1d connected to the input optical waveguide 1b.
  • 3 dB composed of arm optical waveguides 1e and 1f connected to the Y branch optical waveguide 1c, arm optical waveguides 1g and 1h connected to the Y branch optical waveguide 1d, and a directional coupler connected to the arm optical waveguides 1e and 1g.
  • a coupler 1i, a 3 dB coupler 1j composed of a directional coupler connected to the arm optical waveguides 1f and 1h, output optical waveguides 1k and 1l connected to the 3 dB coupler 1i, and output optical waveguides 1m and 1n connected to the 3 dB coupler 1j And.
  • the arm optical waveguides 1e and 1f have the same optical path length.
  • the optical path length of the arm optical waveguide 1h and the optical path length of the arm optical waveguide 1g are set so that the optical path difference is 90 degrees in terms of the phase of light.
  • the optical path length of the arm optical waveguide 1h is set shorter than the optical path length of the arm optical waveguides 1e and 1f by ⁇ / 4 radians (45 degrees) in terms of the light phase
  • the optical path length of the arm optical waveguide 1g is It is set longer by ⁇ / 4 radians in terms of the phase of light than the optical path lengths of the optical waveguides 1e and 1f.
  • the 90-degree hybrid element 1 has an interference characteristic in which the phase is different by 90 degrees between the output characteristic of the 3 dB coupler 1 j and the 3 dB coupler 1 i.
  • This 90-degree hybrid element 1 transmits and transmits local oscillation (LO) light, for example, on the light receiving side of an optical transmission system using a polarization multiplexing quadrature phase shift keying (DP-QPSK) method. Used to mix and interfere with the later DP-QPSK optical signal.
  • LO local oscillation
  • DP-QPSK polarization multiplexing quadrature phase shift keying
  • the polarization-separated LO light and the DP-QPSK optical signal are input to the input optical waveguides 1a and 1b, mixed and interfered, and then output from the output optical waveguides 1k, 1l, 1m, and 1n, respectively. .
  • the light output from the output optical waveguides 1k, 1l, 1m, and 1n is received by a balanced photo detector (B-PD) to separate the I channel and the Q channel of the modulation signal and It can be taken out as a signal.
  • B-PD balanced photo detector
  • the design of the optical path lengths of the arm optical waveguides 1e, 1f, 1g, and 1h greatly affects the characteristics of the element.
  • a desired optical path length may not be obtained at the time of manufacturing the optical waveguide structure due to manufacturing variations and the like.
  • the optical path length is adjusted (trimmed) by the manufacturing apparatus 10 shown in FIG. 1 as follows.
  • hydrogen treatment is performed.
  • This hydrogen treatment is performed, for example, under a pressure of 15 MPa hydrogen gas for 7 days.
  • a wafer W1 subjected to hydrogen treatment is placed on the moving device 14.
  • the laser light L1 from the KrF excimer laser 11 is guided to the predetermined 90-degree hybrid element 1 by the mirror system 12a, the collimating lens system 13, and the mirror 12b, and the shadow mask M1
  • the optical path length is adjusted by irradiating one of the arm optical waveguides not covered with (for example, the arm optical waveguide 1e).
  • 3A and 3B are schematic cross-sectional views for explaining changes when a 90-degree hybrid element is irradiated with laser light.
  • the cores of all the optical waveguides including the arm optical waveguide 1e of the 90-degree hybrid element 1 are surrounded by a cladding layer 1p formed around the substrate 1o made of, for example, silicon. ing.
  • the core is doped with Ge
  • the cladding layer 1p is doped with B or P.
  • the size of the cross section of the core of the optical waveguide including the arm optical waveguide 1e is, for example, 6 ⁇ m ⁇ 6 ⁇ m.
  • Ge and B or P are added so that the relative refractive index difference of the core with respect to the cladding layer 1p is, for example, 0.75%.
  • a region 1q in FIG. 3B indicates a region where the refractive index has changed.
  • Ge that has absorbed the laser beam L1 does not emit light.
  • Ge that has absorbed the laser beam L1 emits fluorescence L2 including light having a wavelength of around 400 nm.
  • the light receiver 15 receives the Ge fluorescence L2 and outputs a current corresponding to the amount of light received.
  • the measurement controller 16 measures the light emission amount of Ge based on the current amount from the light receiver 15 and calculates an integrated value of the light emission amount. When the integrated value of the light emission amount reaches a predetermined value, the measurement controller 16 controls the KrF excimer laser 11 to stop the irradiation with the laser light L1. Thereby, the adjustment of the optical path length is completed.
  • the stop of the irradiation with the laser light L1 may be stopped by an operator based on the integrated value of the light emission amount displayed by the measurement controller 16.
  • the optical path length adjustment amount when adjusting the optical path length based on the irradiation time of the laser light L1 as in the conventional case, if there is a variation in the core size and the Ge content, even if the irradiation time is the same, Variations also occur in the amount of energy of the laser beam L1 absorbed by the core. As a result, the optical path length adjustment amount also varies.
  • B or P in the cladding layer 1p when a laser beam L1 having a wavelength of 248 nm such as the KrF excimer laser 11 is used, B or P in the cladding layer 1p also absorbs the laser beam L1. Therefore, B or P in the cladding layer 1p mainly absorbs the laser light L1 from the start of irradiation of the laser light L1 until a predetermined time, and after the absorption is saturated, Ge in the waveguide core of the arm optical waveguide 1e The absorption of the laser beam L1 is mainly performed. The time from the start of irradiation of the laser light L1 until the light absorption of B or P is saturated is also referred to as pre-irradiation time.
  • this pre-irradiation time varies depending on the variation in the thickness of the cladding layer 1p and the content of B or P, when adjusting the optical path length based on the irradiation time of the laser beam L1, the adjustment of the optical path length There is a risk that the amount of variation will be even greater.
  • the optical path length is adjusted based on the integrated value of the fluorescence emission amount proportional to the energy amount absorbed by Ge.
  • the amount of change in the refractive index of the core of the arm optical waveguide 1e irradiated with the laser light L1 is proportional to the amount of energy of the absorbed laser light L1. It is difficult to directly measure the amount of energy absorbed.
  • the optical path length can be accurately adjusted by controlling the irradiation time of the laser light L1 based on the integrated value of the light emission amount and adjusting the optical path length.
  • a 90-degree hybrid element 1 adjusted to a desired characteristic by performing a hydrogen removal process at a temperature of 80 ° C. for 48 hours and a characteristic stabilization process at a temperature of 300 ° C. or higher for 10 minutes. Can be manufactured.
  • the measurement result will be described.
  • FIG. 4 is a diagram showing the relationship between the irradiation time of the laser beam and the phase shift amount in different 90-degree hybrid element samples manufactured from the same wafer.
  • a solid line in FIG. 4 indicates an approximate straight line of data points by the least square method.
  • the amount of phase shift varies when the irradiation time is 40 seconds or less. This indicates that the pre-irradiation time varies. It can also be seen that when the phase shift amount is adjusted according to the irradiation time of the laser light, the phase shift amount varies even for samples manufactured from the same wafer.
  • FIG. 5 is a diagram showing the relationship between the irradiation time of the laser beam and the phase shift amount in a sample of a 90-degree hybrid element manufactured from two different wafers.
  • a solid line in FIG. 5 represents an approximate straight line of rhombus data points by a least square method for a sample from a certain wafer.
  • the broken line in FIG. 5 shows an approximate straight line of triangular data points according to the least square method for a sample from another wafer.
  • FIG. 5 shows that the phase shift amount further varies between samples manufactured from different wafers.
  • FIG. 6 is a diagram showing the relationship between the light emission amount and the phase shift amount in samples of 90-degree hybrid elements manufactured from different wafers. Solid lines in FIG. 6 indicate approximate straight lines of rhombus and triangle data points by the least square method.
  • the light emission amount is an integrated value from the start of laser light irradiation, and includes light emission measured during the pre-irradiation time.
  • the unit of the integrated value of the light emission amount is “J / cm 2 ”, and the scale of the horizontal axis in FIG. 6 is proportional to this unit. From FIG. 6, it can be seen that the integrated value of the light emission amount and the phase shift amount are in a proportional relationship and have very little variation.
  • the laser light irradiation is controlled based on the integrated value of the light emission amount and the optical path difference is adjusted, there is a variation in the content of B or P in the cladding layer or a variation in the content of Ge in the core.
  • the variation in the phase shift amount can be extremely reduced.
  • FIG. 7 is a schematic configuration diagram of a manufacturing apparatus for performing the method of manufacturing an optical waveguide circuit according to the second embodiment.
  • the manufacturing apparatus 20 includes an ArF excimer laser 21, a shutter 17, a mirror 12 b, a moving device 14, a light receiver 15, and a measurement controller 16.
  • the mirror 12b, the moving device 14, the light receiver 15, and the measurement controller 16 are the same as those of the manufacturing apparatus 10 shown in FIG.
  • the ArF excimer laser 21 outputs laser light L3 having a wavelength of 193 nm, which is ultraviolet light.
  • the shutter 17 has a function of reducing the beam diameter of the laser light L3.
  • the mirror 12b is disposed so as to guide the wafer W2 placed on the moving device 14.
  • the beam diameter of the laser beam L3 is adjusted to about 10 mm ⁇ 10 mm by the shutter 17, for example.
  • the moving device 14 places a wafer W2 on which a number of AWG elements, which are optical waveguide circuits, are formed, and adjusts the position of the wafer W2 so that the laser light L3 is irradiated to a desired location on the wafer W2. Can do.
  • a shadow mask M2 is formed on the surface of the wafer W2 to cover areas other than the place where the laser beam L3 is to be irradiated.
  • FIG. 8 is a schematic plan view of one AWG element formed on the wafer shown in FIG.
  • one AWG element 2 includes an input optical waveguide 2a, an input slab optical waveguide 2b, m (for example, 600) channel optical waveguides 2c, an output slab optical waveguide 2d, and n pieces. For example, 48 output optical waveguides 2e are connected in this order.
  • each channel optical waveguide 2c is set so as to increase with a constant optical path length difference ⁇ L from the inner circumference side toward the outer circumference side. That is, the optical path length difference between adjacent channel optical waveguides 2c is equal to ⁇ L.
  • the AWG element 2 receives each of the output optical waveguides from the input optical waveguide 2a when wavelength multiplexed signal light composed of signal light of wavelengths ⁇ 1,..., ⁇ n arranged at equal intervals on the light frequency is input. It is possible to separate and output signal lights having wavelengths ⁇ 1,.
  • the transmission spectrum between the input optical waveguide 2a and the output optical waveguide corresponding to the wavelength ⁇ 1 in the output optical waveguide 2e has a peak at which the transmittance is maximum at the wavelength ⁇ 1.
  • the design of the optical path length of each channel optical waveguide 2c greatly affects the characteristics of the element.
  • a desired optical path length may not be obtained at the time of manufacturing the optical waveguide structure due to manufacturing variations and the like.
  • the transmittance peak may deviate from a desired wavelength.
  • the optical path length is adjusted (trimmed) by the manufacturing apparatus 20 shown in FIG. 7 as follows.
  • hydrogen treatment is performed. This hydrogen treatment is performed, for example, under a pressure of 15 MPa hydrogen gas for 7 days.
  • the wafer W2 subjected to the hydrogen treatment is placed on the moving device 14.
  • the laser light L3 from the ArF excimer laser 21 is guided to a predetermined AWG element 2 via the shutter 17 and the mirror 12b, and the channel light not covered with the shadow mask M2
  • the entire waveguide 2c is irradiated to adjust the optical path length.
  • FIGS. 9A and 9B are schematic cross-sectional views for explaining changes when an AWG element is irradiated with laser light.
  • the cores of all optical waveguides including the channel optical waveguide 2c of the AWG element 2 are surrounded by a clad layer 2p formed around the substrate 2o made of, for example, silicon. .
  • the core is doped with Ge, and the cladding layer 2p is doped with B or P.
  • the size of the cross section of the core of each optical waveguide is, for example, 6 ⁇ m ⁇ 6 ⁇ m.
  • Ge and B or P are added so that the relative refractive index difference of the optical waveguide with respect to the cladding layer 2p is, for example, 0.75%.
  • the AWG element 2 When the AWG element 2 is irradiated with the laser light L3, Ge in the channel optical waveguide 2c absorbs the laser light L3, and the refractive index of the region irradiated with the laser light L3 changes.
  • B or P in the cladding layer 2p does not absorb the laser light L3 having a wavelength of 193 nm.
  • Ge that absorbed the laser beam L3 emits fluorescence L4 including light having a wavelength of around 400 nm.
  • the light receiver 15 receives the Ge fluorescence L4 and outputs a current corresponding to the amount of light received.
  • the measurement controller 16 measures the light emission amount of Ge based on the current amount from the light receiver 15 and calculates an integrated value of the light emission amount. When the integrated value of the light emission amount reaches a predetermined value, the measurement controller 16 controls the ArF excimer laser 21 to stop the irradiation with the laser light L3. This completes the adjustment of the optical path length (FIG. 9B). The stop of the irradiation with the laser beam L3 may be stopped by an operator based on the integrated value of the light emission amount displayed by the measurement controller 16.
  • the optical path length is adjusted based on the integrated value of the fluorescence emission amount proportional to the absorbed energy amount.
  • the amount of change in the refractive index of the core of the channel optical waveguide 2c irradiated with the laser light L3 is proportional to the energy amount of the absorbed laser light L3.
  • the optical path length can be adjusted accurately by controlling the irradiation time of the laser light L3 based on the integrated value of the light emission amount and adjusting the optical path length.
  • the laser light L3 having a wavelength of 193 nm of the ArF excimer laser 21 is used.
  • B or P in the cladding layer 2p does not absorb the laser beam, so that the problem of variations in pre-irradiation time does not occur. Therefore, the optical path length can be adjusted with higher accuracy.
  • the AWG element 2 adjusted to a desired characteristic is obtained.
  • the measurement result of the transmission spectrum when the optical path length is adjusted by irradiating the channel waveguide of the AWG element with laser light having a wavelength of 193 nm from the ArF excimer laser will be described.
  • FIG. 10 is a diagram showing a transmission spectrum before and after adjustment between an input optical waveguide and a predetermined output waveguide when an ArF excimer laser is used.
  • the transmission spectrum was measured using light of TM polarization (polarization in a direction perpendicular to the surface of the wafer on which the AWG element was formed).
  • FIG. 11 is a diagram showing the relationship between the light emission amount and the wavelength shift amount in samples of different AWG elements manufactured from the same wafer.
  • a solid line in FIG. 11 indicates an approximate straight line of data points by the least square method.
  • the light emission amount is an integrated value from the start of laser beam irradiation.
  • the unit of the integrated value of the light emission amount is “J / cm 2 ”, and the scale of the horizontal axis in FIG. 11 is proportional to this unit. From FIG. 11, it can be seen that the variation in the wavelength shift amount can be extremely reduced by controlling the irradiation of the laser beam based on the integrated value of the light emission amount and adjusting the optical path difference.
  • the transmission spectrum was measured when the optical waveguide length was adjusted by irradiating the channel waveguide of the AWG element with laser light having a wavelength of 248 nm from the KrF excimer laser as in the first embodiment.
  • FIG. 12 is a diagram showing a transmission spectrum before and after adjustment between the input optical waveguide and a predetermined output waveguide when a KrF excimer laser is used.
  • the transmission spectrum was measured using TM polarized light.
  • the transmission peak wavelength related to a predetermined output waveguide can be similarly adjusted.
  • the refractive index of the cladding layer also changes because B or P of the cladding layer absorbs light.
  • the relative refractive index difference between the core and the cladding layer changes.
  • small transmission peaks appear on both sides of the central transmission peak. This indicates that the crosstalk between the channel optical waveguides in the AWG element is deteriorated by the adjustment for shifting the transmission peak wavelength. Therefore, in order to prevent such crosstalk degradation, it is preferable to perform adjustment using an ArF excimer laser.
  • the cladding layers of the 90-degree hybrid element and the AWG element that are optical waveguide circuits contain B or P, but B or P may not be contained.
  • the cladding layer does not contain B or P, for example, even when a KrF excimer laser is used, it is possible to prevent the above-described variation in pre-irradiation time and deterioration of crosstalk.
  • an excimer laser is used as an ultraviolet light source, but there is no particular limitation as long as it is a light source capable of outputting ultraviolet light.
  • the dopant added to the core is not limited to Ge, and is not particularly limited as long as the dopant can absorb the ultraviolet light to be irradiated and change the refractive index of the glass medium.
  • the 90-degree hybrid element and the AWG element are exemplified as the optical waveguide circuit.
  • the type of the optical waveguide circuit is particularly limited. It is not limited.
  • the optical waveguide circuit manufacturing method and manufacturing apparatus according to the present invention are suitable mainly in the field of optical communication.

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Abstract

L'invention concerne un procédé de fabrication d'un circuit à guides d'ondes optiques comprenant une étape d'exposition à de la lumière ultraviolette qui expose à de la lumière ultraviolette le cœur d'un circuit à guides d'ondes optiques muni d'un cœur contenant un dopant absorbant la lumière ultraviolette et modifiant l'indice de réfraction d'un milieu et d'une gaine formée autour du cœur, et une étape de mesure d'émission lumineuse destinée à mesurer la quantité de lumière émise par le dopant. Les caractéristiques du circuit à guides d'ondes optiques sont ajustées sur la base d'une valeur intégrée de la quantité de lumière mesurée. Par conséquent, l'invention concerne un procédé de fabrication et un dispositif de fabrication d'un circuit à guides d'ondes optiques dont les caractéristiques peuvent être ajustées avec une précision élevée par exposition à de la lumière ultraviolette.
PCT/JP2012/064580 2011-08-02 2012-06-06 Procédé de fabrication et dispositif de fabrication d'un circuit à guides d'ondes optiques WO2013018432A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011169408A JP5203491B2 (ja) 2011-08-02 2011-08-02 光導波路回路の製造方法および製造装置
JP2011-169408 2011-08-02

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CN115480347A (zh) * 2021-06-15 2022-12-16 中国科学院长春光学精密机械与物理研究所 波分复用器中阵列波导光纤与平板波导垂直度的提高方法

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JP6228509B2 (ja) * 2014-05-19 2017-11-08 日本電信電話株式会社 波長変換素子の製造方法
JP7302946B2 (ja) * 2018-03-13 2023-07-04 富士通オプティカルコンポーネンツ株式会社 光デバイス、およびこれを用いた光通信モジュール

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JP2001074950A (ja) * 1999-08-31 2001-03-23 Hitachi Cable Ltd 光合分波器の特性調整方法

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JP2001074950A (ja) * 1999-08-31 2001-03-23 Hitachi Cable Ltd 光合分波器の特性調整方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115480347A (zh) * 2021-06-15 2022-12-16 中国科学院长春光学精密机械与物理研究所 波分复用器中阵列波导光纤与平板波导垂直度的提高方法
CN115480347B (zh) * 2021-06-15 2024-05-24 中国科学院长春光学精密机械与物理研究所 波分复用器中阵列波导光纤与平板波导垂直度的提高方法

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