WO2013015491A1 - Apparatus and method for vacuum coating - Google Patents
Apparatus and method for vacuum coating Download PDFInfo
- Publication number
- WO2013015491A1 WO2013015491A1 PCT/KR2011/008310 KR2011008310W WO2013015491A1 WO 2013015491 A1 WO2013015491 A1 WO 2013015491A1 KR 2011008310 W KR2011008310 W KR 2011008310W WO 2013015491 A1 WO2013015491 A1 WO 2013015491A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plating
- vacuum
- electrode plate
- vacuum chamber
- liquid
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1682—Control of atmosphere
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1666—Ultrasonics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/02—Heating or cooling
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/003—Electroplating using gases, e.g. pressure influence
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/20—Electroplating using ultrasonics, vibrations
Definitions
- the present invention relates to a vacuum plating apparatus and method, and in more detail, by placing a plating bath in which a plating liquid is accommodated in a vacuum chamber, and making the inside of the vacuum chamber vacuum by using a vacuum pump, a plating pretreatment process or a plating process. As the bubbles generated during the discharge and removal are easily facilitated, the present invention relates to a vacuum plating apparatus and a vacuum plating method that can effectively prevent mechanical and electrical deterioration of a plating material and improve plating performance.
- Electroplating is a method of forming a thin film of another metal on the surface of an object using the principle of electrolysis, and is also used in the semiconductor field.
- the formation of a thin copper film on a semiconductor wafer can increase the reliability of the semiconductor device due to the large resistance to electrical mobility when the copper is used as a metal wiring, and can increase the signal transfer speed due to the low specific resistance.
- FIG. 1 is a view schematically showing a conventional electroplating apparatus, wherein the electroplating apparatus 1 shown in FIG. 1 forms a whole body and has a plating bath 4 having a plating solution therein, and an image inside the plating solution.
- a negative electrode plate (wafer) 2 which is a plating agent disposed in the downward direction, a positive electrode plate 3 to be plated, and a rectifier 5 connected to the negative electrode plate 2 and the positive electrode plate 3 so as to be energized. .
- FIG. 2 illustrates a principle of copper plating in the electroplating apparatus 1 shown in FIG.
- Hydrogen (H 2 ) is electrolyzed to generate electrons (e-), and the plating solution is decomposed into copper ions (Cu +2 ) and sulfate ions (SO 4 -2 ).
- the electrons (e ⁇ ) of the positive electrode move to the negative electrode and react with copper ions (Cu +2 ) to plate copper (Cu) on the negative electrode plate 2.
- the plating process is performed by applying a substrate or wafer to be plated in a plating solution and conducting electricity through a pretreatment process. Bubbles (air, hydrogen, etc.) generated in the electroless plating process as well as the electroplating process This affects the mechanical and electrical deterioration of the plated structure.
- the present applicant in order to prevent the formation of internal bubbles, the present applicant, as in Korean Patent Publication No. 2010-0118917 (published: 2010.11.08, name: electroplating apparatus), the plating liquid is injected from the upper side to form a plating layer on the upper surface of the wafer.
- the electroplating apparatus is a device for electrolytic plating only, and since the discharge and removal of bubbles are not effective, the plating performance is not improved. There was a problem that did not.
- an object of the present invention is to place a plating bath in which the plating liquid is accommodated in the vacuum chamber, and to make the inside of the vacuum chamber in a vacuum state by using a vacuum pump, It is to provide a vacuum plating apparatus and method capable of effectively preventing mechanical and electrical deterioration of a plating material and improving the performance of the plating material, as the bubbles are easily discharged and removed during the plating pretreatment process or the plating process.
- the electroplating or electroless plating on the plated object the plating bath 100 is accommodated in the plating solution;
- a positive electrode plate 210 which is a plating agent disposed in the plating bath 100 in parallel or spaced apart at a predetermined interval horizontally or vertically, and a negative electrode plate 220 which is a plated object;
- the plating chamber 100 is accommodated therein, the vacuum chamber 300 is adjusted to maintain a vacuum state;
- a vacuum degree adjusting device 400 connected to the vacuum chamber 300 to adjust the degree of vacuum;
- a heating device 500 for controlling the temperature of the plating liquid accommodated in the plating bath 100. Characterized in that it is formed to include.
- the vacuum plating apparatus 10 is formed to include a rectifier 600 is connected to each of the positive electrode plate 210 and the negative electrode plate 220 to pass a current, characterized in that the plating solution is an electrolyte solution.
- the vacuum plating apparatus 10 is characterized in that the plating solution is a plating solution for electroless plating including a reducing agent.
- the vacuum degree control device 400 is installed in the vent 310 of the vacuum chamber 300, the vacuum gauge 410 for measuring the degree of vacuum in the vacuum chamber 300; A ventilation valve 420 installed at the ventilation hole 310 of the vacuum chamber 300 to control the opening and closing of the ventilation hole 310; And a vacuum pump 430 connected to the vacuum chamber 300 to make the vacuum chamber 300 in a vacuum state. Characterized in that it is formed to include.
- the vacuum plating apparatus 10 filters the evaporated plating solution so as not to pass to the vacuum pump 430, and includes a trap part 320 installed between the vacuum chamber 300 and the vacuum pump 430. Characterized in that.
- the vacuum plating apparatus 10 may further include a plating liquid replenishing apparatus 700 for replenishing the plating liquid in the plating bath 100.
- the vacuum plating apparatus 10 is characterized in that it comprises an ultrasonic generator for applying an ultrasonic wave to the plating liquid.
- the vacuum plating apparatus 10 is characterized in that it further comprises a stirring device 900 for stirring the plating liquid.
- the vacuum plating method is f) is installed in the vent port 310 of the vacuum chamber 300 to open the vent valve 420 to control the opening and closing of the vent port 310 to the vacuum state of the plating bath 100
- the ventilation step of taking out the plated cathode plate 220 (S600) It characterized in that it further comprises.
- the vacuum plating method is characterized in that the ultrasonic generator 800 for applying an ultrasonic wave to the plating liquid in any one or more of steps a) to e) is operated to discharge the bubbles.
- the vacuum plating method is characterized in that the stirring device 900 for stirring the plating liquid in any one or more of steps a) to e) is operated to discharge the bubbles.
- the vacuum plating method includes a heating apparatus 500 for adjusting the temperature of the plating liquid so that the plating liquid maintains the proper temperature and the appropriate water level in step c), and a plating solution replenishing apparatus 700 for replenishing the plating liquid in the plating bath 100. ) Is operated.
- the vacuum plating apparatus and method of the present invention by placing a plating bath in which a plating solution is accommodated in a vacuum chamber, and vacuuming the inside of the vacuum chamber using a vacuum pump, bubbles generated during the plating pretreatment process or the plating process are discharged. And as the removal is easy, there is an advantage that can effectively prevent the mechanical and electrical deterioration of the plating, and improve the plating performance.
- the vacuum plating apparatus and method of the present invention is an electroless or electrolytic plating process is performed in a vacuum state, in order to prevent the phenomenon of evaporation and freezing of the water of the plating liquid due to low pressure in a vacuum state to facilitate the plating process
- the advantage is that you can.
- the vacuum plating apparatus and method of the present invention by applying an ultrasonic wave to the plating liquid by using an ultrasonic generator, or by stirring the plating liquid through a stirring device, it is easy to discharge the bubbles, there is an advantage to improve the plating performance. .
- FIG. 1 is a view showing a conventional electroplating apparatus.
- 3 and 4 respectively show two types of vacuum plating apparatus according to the present invention.
- FIG. 5 is yet another view of the vacuum plating apparatus shown in FIG.
- FIG. 6 is yet another view of the vacuum plating apparatus shown in FIG. 4.
- FIG. 6 is yet another view of the vacuum plating apparatus shown in FIG. 4.
- FIG. 7 is a flow chart showing a vacuum plating method according to the present invention.
- FIG. 3 and 4 show two types of vacuum plating apparatuses according to the present invention, respectively, FIG. 5 is another view showing the vacuum plating apparatus shown in FIG. 3, and FIG. 6 is the vacuum shown in FIG. 4. Another view showing the plating apparatus, Figure 7 is a flow chart showing a vacuum plating method according to the present invention.
- the vacuum plating apparatus 10 of the present invention relates to an apparatus for electrolytic plating or electroless plating on a plated object, the plating vessel 100, the positive electrode plate 210, the negative electrode plate 220, the vacuum chamber 300, the degree of vacuum It is formed including a control device 400 and the heating device (500).
- a plating solution is accommodated therein, and a plated positive electrode plate 210 and a plated negative electrode plate 220 are arranged side by side at a predetermined interval horizontally or vertically.
- the vacuum plating apparatus 10 of FIG. 3 illustrates that the positive electrode plate 210 and the negative electrode plate 220 are applied with a deep type plating technique in which the positive electrode plate 210 and the negative electrode plate 220 are horizontally spaced side by side.
- the vacuum plating apparatus 10 of FIG. 4 illustrates a cup type plating technique in which the positive electrode plate 210 and the negative electrode plate 220 are vertically spaced apart from each other and are arranged side by side.
- the vacuum plating apparatus 10 is all used in the semiconductor wiring process etc. all.
- the negative electrode plate 220 may be a substrate to be plated and used in a semiconductor wiring process, and the positive electrode plate 210 may be a copper ball or a copper plate in the case of copper plating as a plating agent.
- the vacuum chamber 300 has a predetermined space is formed so that the plating bath 100 is accommodated therein, and is connected to a vacuum degree control device 400 for adjusting the degree of vacuum to maintain a vacuum state.
- the heating device 500 is a device for adjusting the temperature of the plating liquid contained in the plating bath 100, the temperature of the plating liquid is lowered while the water in the plating liquid evaporates due to the low pressure in the vacuum state, at this time, the plating liquid This device is heated to prevent freezing.
- the vacuum plating apparatus 10 of the present invention may be formed by further comprising a rectifier 600 connected to the positive electrode plate 210 and the negative electrode plate 220 to conduct a current, in this case, the plating bath 100
- the plating liquid contained therein may be an electrolyte solution.
- Such a configuration is for the vacuum plating apparatus 10 of the present invention to be used for electrolytic plating, the electrolysis is performed when the current is supplied to the positive electrode plate 210 and the negative electrode plate 220 by the operation of the rectifier 600.
- the negative electrode plate 220 is plated through.
- an electroless plating plating solution including a reducing agent may be used to be used for electroless plating.
- the vacuum degree control device 400 may be formed to include a vacuum gauge 410, a ventilation valve 420 and a vacuum pump 430.
- the vacuum gauge 410 is installed in the vent hole 310 of the vacuum chamber 300 to measure the degree of vacuum in the vacuum chamber 300
- the vent valve 420 is a vent hole of the vacuum chamber (300) It is installed in 310 to control the opening and closing of the ventilation opening (310).
- the vacuum pump 430 is connected to the vacuum chamber 300 to make the vacuum chamber 300 in a vacuum state.
- the vacuum plating apparatus 10 of the present invention can determine the degree of the internal vacuum degree through the vacuum gauge 410 connected to the ventilation hole 310 of the vacuum chamber 300, the appropriate vacuum chamber ( 300)
- the vacuum pump 430 is operated to allow the inside to reach an appropriate degree of vacuum or to maintain an appropriate degree of vacuum.
- the air inside and outside the vacuum chamber 300 may flow by opening the ventilation valve 420.
- a phenomenon in which water contained in the plating liquid evaporates to a vapor state may occur due to low pressure in a vacuum state, and the vacuum pump 430 is evaporated. It may be formed between the vacuum chamber 300 and the vacuum pump 430 is installed between the trap unit 320 to filter the steam so that steam does not flow into the furnace.
- the vacuum plating apparatus 10 of the present invention replenishes the plating solution in the plating bath 100 to increase the appropriate water level. It may be formed by further comprising a plating liquid refilling apparatus 700 to maintain.
- the vacuum plating apparatus 10 of the present invention is a problem that may arise due to the configuration to facilitate the discharge of bubbles by using a vacuum state, that is, water vapor is generated by the evaporation of the plating liquid, the plating liquid is frozen, or the plating liquid
- the trap unit 320, the heating device 500, and the plating solution refilling device 700 may be further included to prevent a phenomenon such as a low water level.
- the vacuum plating apparatus 10 of the present invention uses the vacuum pump 430 to make the inside of the vacuum chamber 300 in a vacuum state, thereby preventing the discharge and removal of bubbles generated during the plating pretreatment process or the plating process. As it becomes easy, it is possible to effectively prevent the mechanical and electrical deterioration of the plating, and to improve the plating performance.
- the electroless or electrolytic plating process is performed in a vacuum state, but the plating process by preventing the phenomenon that water in the plating liquid evaporates and freezes due to low pressure in the vacuum state. This can be done smoothly.
- the vacuum plating apparatus 10 of the present invention may include an ultrasonic generator 800 for applying ultrasonic waves to the plating liquid so that bubbles can be well discharged by fine shaking. .
- the ultrasonic wave generator 800 may be operated in a vacuum state, and may be further operated before and after the vacuum state to maximize the discharge of bubbles.
- the vacuum plating apparatus 10 of the present invention may further include a stirring device 900 which stirs the plating liquid so that bubbles are well discharged.
- Configurations such as the ultrasonic generator 800 and the stirring apparatus 900 as described above may be applied to both the deep type plating method shown in FIG. 3 and the cup type plating method shown in FIG. 5.
- the vacuum plating method using the vacuum plating apparatus 10 of the present invention is a) a plating bath in which the plating liquid is accommodated in the positive electrode plate 210, which is a plating agent and the negative electrode plate 220, which is to be plated ( An arrangement step (S100) disposed in 100); b) a rectifier (600) installation step (S200) for connecting the rectifier 600 for conducting current to the positive electrode plate 210 and the negative electrode plate 220; c) After sealing the vacuum chamber 300 in which the plating bath 100 is accommodated, the appropriate degree of vacuum in the vacuum chamber 300 by a vacuum degree control device 400 for adjusting the vacuum degree of the vacuum chamber 300 Maintaining a vacuum step (S300); d) a bubble discharge step (S400) in which the plating bath 100 is in a vacuum state and bubbles in the plating liquid are discharged out; e) a plating step of plating the negative electrode plate 220 by operating the rectifier 600 after removing the bubbles of the discharge
- the negative electrode plate 220 to be plated and the positive electrode plate 210 which is a plating agent are installed in the plating bath 100 to connect the negative electrode and the positive electrode of the rectifier 600, respectively. do.
- the vacuum chamber 300 is closed, the ventilation valve 420 is closed, and the vacuum pump 430 is operated so that the plating bath 100 in the vacuum chamber 300 is in a vacuum state of an appropriate degree of vacuum. do.
- the plating bath 100 maintains an appropriate vacuum degree through the vacuum degree control process as described above, bubbles in the plating solution come out of the plating solution.
- the rectifier 600 is operated to plate the negative electrode plate 220. do.
- f is installed in the vent port 310 of the vacuum chamber 300 to open the vent valve 420 to control the opening and closing of the vent port 310 to the plating bath ( After the vacuum state of the 100 is released, a ventilation step (S600) for taking out the plated cathode plate 220 is completed; May be further performed.
- the vacuum plating method of the present invention may operate the ultrasonic generator 800 for applying an ultrasonic wave to the plating liquid in any one or more of steps a) to e) to maximize the discharge of the bubble, in conclusion, the present invention
- the vacuum plating operation using the vacuum plating method of the ultrasonic generator 800 may be operated while the vacuum state is maintained, only the ultrasonic generator 800 may be operated alone to induce the discharge of bubbles, ultrasonic It may be performed in a state in which only the vacuum state is maintained without the generator 800.
- the stirring device 900 which stirs the plating liquid in any one or more of steps a) to e) may be operated to maximize the discharge of bubbles.
- the operation of the stirring device 900 may be operated alone, or may be operated together in a vacuum state.
- ultrasonic waves are applied to the plating liquid by using the ultrasonic generator 800 or by stirring the plating liquid through the stirring apparatus 900, thereby easily discharging bubbles. And, there is an advantage to increase the plating performance.
- the vacuum plating method of the present invention is a heating device for controlling the temperature of the plating liquid so that the plating liquid maintains the proper temperature and the appropriate water level in spite of the evaporation of the plating liquid in the step c) the plating bath 100 is in a vacuum state ( 500 and the plating solution refilling apparatus 700 for replenishing the plating solution with the plating bath 100 may be operated.
Abstract
The present invention relates to an apparatus and method for vacuum coating, and more particularly, the present invention relates to an apparatus and method for vacuum coating which can effectively prevent a coated material from electrically and mechanically deteriorating and which can improve coating ability since bubbles that occur during a coating pretreatment process or a coating process are easily discharged and removed by placing the inside of a vacuum chamber into a vacuum state through the use of a vacuum pump and since a plating bath contains a plating solution within the vacuum chamber.
Description
본 발명은 진공 도금 장치 및 방법에 관한 것으로서, 더욱 상세하게 진공 챔버 내에 도금액이 수용되는 도금조를 배치하고, 진공 펌프를 이용하여 상기 진공 챔버 내부를 진공 상태로 만들어줌으로써, 도금 전처리 공정 또는 도금 공정 중에 발생되는 기포의 배출 및 제거가 용이하게 됨에 따라, 도금물의 기계적 전기적 열화를 효과적으로 방지하고, 도금 성능을 향상시킬 수 있는 진공 도금 장치 및 진공 도금 방법에 관한 것이다.The present invention relates to a vacuum plating apparatus and method, and in more detail, by placing a plating bath in which a plating liquid is accommodated in a vacuum chamber, and making the inside of the vacuum chamber vacuum by using a vacuum pump, a plating pretreatment process or a plating process. As the bubbles generated during the discharge and removal are easily facilitated, the present invention relates to a vacuum plating apparatus and a vacuum plating method that can effectively prevent mechanical and electrical deterioration of a plating material and improve plating performance.
전기도금(electroplating)은 전기분해의 원리를 이용하여 물체의 표면에 다른 금속의 얇은 막을 형성하는 방법으로, 반도체 분야에도 이용되고 있다. Electroplating is a method of forming a thin film of another metal on the surface of an object using the principle of electrolysis, and is also used in the semiconductor field.
최근 반도체 기술은 초소형화, 고용량화, 고집적화 되고 있는데, 이를 위해서 웨이퍼에 각각의 기능을 담당하는 박막 층을 높은 신뢰성을 갖도록 하는 기술이 요구된다. Recently, semiconductor technology has been miniaturized, high capacity, and highly integrated. To this end, a technology for high reliability of a thin film layer having a respective function on a wafer is required.
특히, 반도체 웨이퍼에 구리 박막을 형성하는 것은 상기 구리가 금속 배선으로 이용될 경우 전기이동도에 대한 저항이 커 반도체 소자의 신뢰성을 향상시킬 수 있고, 비저항이 낮아 신호전달 속도를 증가시킬 수 있다. In particular, the formation of a thin copper film on a semiconductor wafer can increase the reliability of the semiconductor device due to the large resistance to electrical mobility when the copper is used as a metal wiring, and can increase the signal transfer speed due to the low specific resistance.
도 1은 종래의 전기도금장치를 간략하게 도시한 도면으로서, 상기 도 1에 도시한 전기도금장치(1)는 전체 몸체를 형성하며 내부에 도금액이 구비되는 도금조(4), 도금액 내부에 상ㆍ하 방향으로 배치되는 도금제인 음극판(웨이퍼)(2)과 피도금물인 양극판(3), 상기 음극판(2) 및 양극판(3)에 연결되어 통전되도록 하는 정류기(5)를 포함하여 형성된다.1 is a view schematically showing a conventional electroplating apparatus, wherein the electroplating apparatus 1 shown in FIG. 1 forms a whole body and has a plating bath 4 having a plating solution therein, and an image inside the plating solution. A negative electrode plate (wafer) 2 which is a plating agent disposed in the downward direction, a positive electrode plate 3 to be plated, and a rectifier 5 connected to the negative electrode plate 2 and the positive electrode plate 3 so as to be energized. .
상기 전기도금장치(1)는 상기 정류기가 작동되어 상기 음극판(2) 및 양극판(3)에 전류가 통전되면, 전기 분해 과정을 거쳐 상기 음극판(2) 표면에 도금이 진행된다.In the electroplating apparatus 1, when the rectifier is operated to supply current to the negative electrode plate 2 and the positive electrode plate 3, plating is performed on the surface of the negative electrode plate 2 through an electrolysis process.
도 2는 상기 도 1에 도시한 전기도금장치(1)에서 구리가 도금되는 원리를 도시한 것으로서, 더욱 상세하게, 음극판(2)에 정류기(5)의 음극을 연결하고 통전하면 양극판(3)에서는 수소(H2)가 전기 분해되어 전자(e-)가 발생하고, 도금액은 구리이온(Cu+2)과 황산이온(SO4
-2)으로 분해된다. 양극의 전자(e-)는 음극으로 이동되어 구리이온(Cu+2)과 반응하여 음극판(2)에 구리(Cu)가 도금된다.FIG. 2 illustrates a principle of copper plating in the electroplating apparatus 1 shown in FIG. Hydrogen (H 2 ) is electrolyzed to generate electrons (e-), and the plating solution is decomposed into copper ions (Cu +2 ) and sulfate ions (SO 4 -2 ). The electrons (e−) of the positive electrode move to the negative electrode and react with copper ions (Cu +2 ) to plate copper (Cu) on the negative electrode plate 2.
상술한 바와 같이, 일반적으로 도금 공정은 전처리 과정을 거치고 도금하고자 하는 기판 또는 웨이퍼를 도금액에 넣어 통전시켜 진행되는데, 전해도금뿐만 아니라 무전해 도금 과정에서 발생되는 기포(공기, 수소 등)가 도금에 영향을 미쳐 도금구조물의 기계적, 전기적 열화를 초래하게 된다.As described above, in general, the plating process is performed by applying a substrate or wafer to be plated in a plating solution and conducting electricity through a pretreatment process. Bubbles (air, hydrogen, etc.) generated in the electroless plating process as well as the electroplating process This affects the mechanical and electrical deterioration of the plated structure.
이와 같이 내부 기포 형성을 방지하기 위해 본 출원인은 국내공개특허 제 2010-0118917호(공개일 : 2010.11.08, 명칭 : 전기도금장치)와 같이, 도금액이 상측에서 분사되어 웨이퍼의 상면에 도금층을 형성함으로써 내부 기포 형성을 방지할 수 있는 전기도금장치를 개발하였으나, 상기 전기도금장치의 경우, 전해 도금만을 위한 장치이며, 기포의 배출 및 제거가 효과적으로 이루어지지 않아 도금 성능이 목표했던 바와 같이, 향상되지 않았던 문제점이 있었다.In order to prevent the formation of internal bubbles, the present applicant, as in Korean Patent Publication No. 2010-0118917 (published: 2010.11.08, name: electroplating apparatus), the plating liquid is injected from the upper side to form a plating layer on the upper surface of the wafer. By developing an electroplating apparatus that can prevent the formation of internal bubbles, the electroplating apparatus is a device for electrolytic plating only, and since the discharge and removal of bubbles are not effective, the plating performance is not improved. There was a problem that did not.
따라서 전해 도금 또는 무전해 도금의 문제점인 기포를 효과적으로 배출 및 제거하여 도금 성능을 향상시킬 수 있는 도금장치의 개발이 필요한 실정이다.Therefore, it is necessary to develop a plating apparatus that can effectively improve plating performance by effectively discharging and removing bubbles, which are problems of electrolytic plating or electroless plating.
본 발명은 상술한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 진공 챔버 내에 도금액이 수용되는 도금조를 배치하고, 진공 펌프를 이용하여 상기 진공 챔버 내부를 진공 상태로 만들어줌으로써, 도금 전처리 공정 또는 도금 공정 중에 발생되는 기포의 배출 및 제거가 용이하게 됨에 따라, 도금물의 기계적 전기적 열화를 효과적으로 방지하고, 도금물의 성능을 향상시킬 수 있는 진공 도금 장치 및 방법을 제공하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is to place a plating bath in which the plating liquid is accommodated in the vacuum chamber, and to make the inside of the vacuum chamber in a vacuum state by using a vacuum pump, It is to provide a vacuum plating apparatus and method capable of effectively preventing mechanical and electrical deterioration of a plating material and improving the performance of the plating material, as the bubbles are easily discharged and removed during the plating pretreatment process or the plating process.
본 발명의 진공 도금 장치는 피도금물에 전해 도금 또는 무전해 도금하는 장치에 있어서, 도금액이 수용되는 도금조(100); 수평 또는 수직으로 일정 간격 이격되어 나란하게 상기 도금조(100) 내에 배치되는 도금제인 양극판(210)과, 피도금물인 음극판(220); 상기 도금조(100)가 내부에 수용되며, 진공 상태를 유지하도록 조절되는 진공챔버(300); 상기 진공챔버(300)에 연결되어 진공도를 조절하는 진공도 조절장치(400); 및 상기 도금조(100) 내에 수용되는 도금액의 온도를 조절하는 가열장치(500); 를 포함하여 형성되는 것을 특징으로 한다.In the vacuum plating apparatus of the present invention, the electroplating or electroless plating on the plated object, the plating bath 100 is accommodated in the plating solution; A positive electrode plate 210 which is a plating agent disposed in the plating bath 100 in parallel or spaced apart at a predetermined interval horizontally or vertically, and a negative electrode plate 220 which is a plated object; The plating chamber 100 is accommodated therein, the vacuum chamber 300 is adjusted to maintain a vacuum state; A vacuum degree adjusting device 400 connected to the vacuum chamber 300 to adjust the degree of vacuum; And a heating device 500 for controlling the temperature of the plating liquid accommodated in the plating bath 100. Characterized in that it is formed to include.
또한, 상기 진공 도금 장치(10)는 상기 양극판(210) 및 음극판(220)에 각각 연결되어 전류를 통전시키는 정류기(600)를 포함하여 형성되며, 도금액이 전해질 용액인 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 is formed to include a rectifier 600 is connected to each of the positive electrode plate 210 and the negative electrode plate 220 to pass a current, characterized in that the plating solution is an electrolyte solution.
또한, 상기 진공 도금 장치(10)는 도금액이 환원제를 포함한 무전해 도금용 도금액인 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 is characterized in that the plating solution is a plating solution for electroless plating including a reducing agent.
또한, 상기 진공도 조절장치(400)는 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 진공챔버(300) 내의 진공도를 측정하는 진공게이지(410); 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하는 환기밸브(420); 및 상기 진공챔버(300)와 연결되어 상기 진공챔버(300)를 진공상태로 만들어주는 진공펌프(430); 를 포함하여 형성되는 것을 특징으로 한다.In addition, the vacuum degree control device 400 is installed in the vent 310 of the vacuum chamber 300, the vacuum gauge 410 for measuring the degree of vacuum in the vacuum chamber 300; A ventilation valve 420 installed at the ventilation hole 310 of the vacuum chamber 300 to control the opening and closing of the ventilation hole 310; And a vacuum pump 430 connected to the vacuum chamber 300 to make the vacuum chamber 300 in a vacuum state. Characterized in that it is formed to include.
또한, 상기 진공 도금 장치(10)는 증발된 도금액이 상기 진공펌프(430)로 넘어가지 않도록 필터링 하며, 상기 진공챔버(300)와 진공펌프(430) 사이에 설치되는 트랩부(320)를 포함하는 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 filters the evaporated plating solution so as not to pass to the vacuum pump 430, and includes a trap part 320 installed between the vacuum chamber 300 and the vacuum pump 430. Characterized in that.
또한, 상기 진공 도금 장치(10)는 상기 도금조(100)에 도금액을 보충하는 도금액 보충장치(700)를 더 포함하는 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 may further include a plating liquid replenishing apparatus 700 for replenishing the plating liquid in the plating bath 100.
또한, 상기 진공 도금 장치(10)는 도금액에 초음파를 가해주는 초음파 발생장치(800)를 포함하는 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 is characterized in that it comprises an ultrasonic generator for applying an ultrasonic wave to the plating liquid.
또한, 상기 진공 도금 장치(10)는 도금액을 휘저어 섞어주는 교반장치(900)를 더 포함하는 것을 특징으로 한다.In addition, the vacuum plating apparatus 10 is characterized in that it further comprises a stirring device 900 for stirring the plating liquid.
본 발명의 진공 도금 장치(10)를 이용한 진공 도금 방법은 a) 도금제인 양극판(210) 및 피도금물인 음극판(220)을 도금액이 수용되는 도금조(100) 내에 배치하는 배치 단계(S100); b) 상기 양극판(210) 및 음극판(220)에 전류를 통전시켜주는 정류기(600)를 연결하는 정류기(600) 설치 단계(S200); c) 상기 도금조(100)가 수용되는 진공챔버(300)를 밀폐시킨 다음, 상기 진공챔버(300)의 진공도를 조절하는 진공도 조절장치(400)에 의해 상기 진공챔버(300) 내에 적정량의 진공도를 유지시키는 진공 단계(S300); d) 상기 도금조(100)가 진공상태가 되어 도금액 내의 기포가 밖으로 배출되는 기포 배출 단계(S400); e) 배출된 도금액의 기포가 제거된 다음, 상기 정류기(600)를 작동시켜 음극판(220)을 도금하는 도금 단계(S500); 를 포함하는 것을 특징으로 한다.In the vacuum plating method using the vacuum plating apparatus 10 of the present invention, a) an arranging step (S100) of disposing a positive electrode plate 210, which is a plating agent, and a negative electrode plate 220, which is a plated object, in a plating bath 100 in which a plating solution is accommodated. ; b) a rectifier (600) installation step (S200) for connecting the rectifier 600 for conducting current to the positive electrode plate 210 and the negative electrode plate 220; c) After sealing the vacuum chamber 300 in which the plating bath 100 is accommodated, the appropriate degree of vacuum in the vacuum chamber 300 by a vacuum degree control device 400 for adjusting the vacuum degree of the vacuum chamber 300 Maintaining a vacuum step (S300); d) a bubble discharge step (S400) in which the plating bath 100 is in a vacuum state and bubbles in the plating liquid are discharged out; e) a plating step of plating the negative electrode plate 220 by operating the rectifier 600 after removing the bubbles of the discharged plating solution (S500); Characterized in that it comprises a.
또한, 상기 진공 도금 방법은 f) 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하는 환기밸브(420)를 개방하여 상기 도금조(100)의 진공상태가 해제된 다음, 도금이 완료된 음극판(220)을 꺼내는 환기 단계(S600); 를 더 포함하는 것을 특징으로 한다.In addition, the vacuum plating method is f) is installed in the vent port 310 of the vacuum chamber 300 to open the vent valve 420 to control the opening and closing of the vent port 310 to the vacuum state of the plating bath 100 After the release is completed, the ventilation step of taking out the plated cathode plate 220 (S600); It characterized in that it further comprises.
또한, 상기 진공 도금 방법은 a) 내지 e) 단계 중 어느 하나 이상에서 도금액에 초음파를 가해주는 초음파 발생장치(800)가 작동되어 기포가 배출되도록 하는 것을 특징으로 한다.In addition, the vacuum plating method is characterized in that the ultrasonic generator 800 for applying an ultrasonic wave to the plating liquid in any one or more of steps a) to e) is operated to discharge the bubbles.
또한, 상기 진공 도금 방법은 a) 내지 e) 단계 중 어느 하나 이상에서 도금액을 휘저어 섞어주는 교반장치(900)가 작동되어 기포가 배출되도록 하는 것을 특징으로 한다.In addition, the vacuum plating method is characterized in that the stirring device 900 for stirring the plating liquid in any one or more of steps a) to e) is operated to discharge the bubbles.
또한, 상기 진공 도금 방법은 c) 단계에서 도금액이 적정온도 및 적정수위를 유지하도록 도금액의 온도를 조절하는 가열장치(500)와, 상기 도금조(100)에 도금액을 보충하는 도금액 보충장치(700)가 작동되는 것을 특징으로 한다.In addition, the vacuum plating method includes a heating apparatus 500 for adjusting the temperature of the plating liquid so that the plating liquid maintains the proper temperature and the appropriate water level in step c), and a plating solution replenishing apparatus 700 for replenishing the plating liquid in the plating bath 100. ) Is operated.
본 발명의 진공 도금 장치 및 방법은 진공 챔버 내에 도금액이 수용되는 도금조를 배치하고, 진공 펌프를 이용하여 상기 진공 챔버 내부를 진공 상태로 만들어줌으로써, 도금 전처리 공정 또는 도금 공정 중에 발생되는 기포의 배출 및 제거가 용이하게 됨에 따라, 도금물의 기계적 전기적 열화를 효과적으로 방지하고, 도금 성능을 향상시킬 수 있다는 장점이 있다.In the vacuum plating apparatus and method of the present invention, by placing a plating bath in which a plating solution is accommodated in a vacuum chamber, and vacuuming the inside of the vacuum chamber using a vacuum pump, bubbles generated during the plating pretreatment process or the plating process are discharged. And as the removal is easy, there is an advantage that can effectively prevent the mechanical and electrical deterioration of the plating, and improve the plating performance.
또한, 본 발명의 진공 도금 장치 및 방법은 진공 상태에서 무전해 또는 전해 도금 공정이 이루어지되, 진공 상태에서 저압으로 인해 도금액의 물이 증발되고, 얼어 버리는 현상을 방지하여 도금 공정이 원활하게 이루어지도록 할 수 있다는 장점이 있다.In addition, the vacuum plating apparatus and method of the present invention is an electroless or electrolytic plating process is performed in a vacuum state, in order to prevent the phenomenon of evaporation and freezing of the water of the plating liquid due to low pressure in a vacuum state to facilitate the plating process The advantage is that you can.
또한, 본 발명의 진공 도금 장치 및 방법은 초음파 발생장치를 이용하여 도금액에 초음파를 가해주거나, 교반장치를 통해 도금액을 휘저어 줌으로써, 기포의 배출이 용이하며, 도금 성능을 보다 높일 수 있는 장점이 있다.In addition, the vacuum plating apparatus and method of the present invention by applying an ultrasonic wave to the plating liquid by using an ultrasonic generator, or by stirring the plating liquid through a stirring device, it is easy to discharge the bubbles, there is an advantage to improve the plating performance. .
도 1은 종래의 전기 도금 장치를 나타낸 도면.1 is a view showing a conventional electroplating apparatus.
도 2는 전기 도금 원리를 간략하게 나타낸 도면.2 is a simplified illustration of the electroplating principle.
도 3 및 도 4는 본 발명에 따른 진공 도금 장치의 두 가지 타입을 각각 나타낸 도면.3 and 4 respectively show two types of vacuum plating apparatus according to the present invention.
도 5는 도 3에 도시된 진공 도금 장치를 나타낸 또 다른 도면.5 is yet another view of the vacuum plating apparatus shown in FIG.
도 6은 도 4에 도시된 진공 도금 장치를 나타낸 또 다른 도면.FIG. 6 is yet another view of the vacuum plating apparatus shown in FIG. 4. FIG.
도 7은 본 발명에 따른 진공 도금 방법을 나타낸 순서도.7 is a flow chart showing a vacuum plating method according to the present invention.
이하, 상술한 바와 같은 특징을 가지는 진공 도금 장치를 첨부된 도면을 참조로 상세히 설명한다. Hereinafter, a vacuum plating apparatus having the features as described above will be described in detail with reference to the accompanying drawings.
도 3 및 도 4는 본 발명에 따른 진공 도금 장치의 두 가지 타입을 각각 나타낸 도면이며, 도 5는 도 3에 도시된 진공 도금 장치를 나타낸 또 다른 도면이고, 도 6은 도 4에 도시된 진공 도금 장치를 나타낸 또 다른 도면이며, 도 7은 본 발명에 따른 진공 도금 방법을 나타낸 순서도이다.3 and 4 show two types of vacuum plating apparatuses according to the present invention, respectively, FIG. 5 is another view showing the vacuum plating apparatus shown in FIG. 3, and FIG. 6 is the vacuum shown in FIG. 4. Another view showing the plating apparatus, Figure 7 is a flow chart showing a vacuum plating method according to the present invention.
본 발명의 진공 도금 장치(10)는 피도금물에 전해 도금 또는 무전해 도금하는 장치에 관한 것으로, 크게 도금조(100), 양극판(210), 음극판(220), 진공챔버(300), 진공도 조절장치(400) 및 가열장치(500)를 포함하여 형성된다.The vacuum plating apparatus 10 of the present invention relates to an apparatus for electrolytic plating or electroless plating on a plated object, the plating vessel 100, the positive electrode plate 210, the negative electrode plate 220, the vacuum chamber 300, the degree of vacuum It is formed including a control device 400 and the heating device (500).
상기 도금조(100)에는 내부에 도금액이 수용되며, 수평 또는 수직으로 일정 간격 이격되어 나란하게 도금제인 양극판(210)과 피도금물인 음극판(220)이 배치된다.In the plating bath 100, a plating solution is accommodated therein, and a plated positive electrode plate 210 and a plated negative electrode plate 220 are arranged side by side at a predetermined interval horizontally or vertically.
도 3의 진공 도금 장치(10)는 상기 양극판(210) 및 음극판(220)이 수평으로 일정 간격 이격되어 나란하게 배치되는 Deep type 방식의 도금기술을 적용되는 것을 도시한 것이다.The vacuum plating apparatus 10 of FIG. 3 illustrates that the positive electrode plate 210 and the negative electrode plate 220 are applied with a deep type plating technique in which the positive electrode plate 210 and the negative electrode plate 220 are horizontally spaced side by side.
도 4의 진공 도금 장치(10)는 상기 양극판(210) 및 음극판(220)이 수직으로 일정 간격 이격되어 나란하게 배치되는 Cup type 방식의 도금기술이 적용된 것을 도시한 것으로, 도 3 및 도 4의 진공 도금 장치(10)는 모두 반도체 배선 공정 등에서 많이 사용된다.The vacuum plating apparatus 10 of FIG. 4 illustrates a cup type plating technique in which the positive electrode plate 210 and the negative electrode plate 220 are vertically spaced apart from each other and are arranged side by side. The vacuum plating apparatus 10 is all used in the semiconductor wiring process etc. all.
상기 음극판(220)은 피도금물로, 반도체 배선 공정에 사용되는 기판일 수 있으며, 상기 양극판(210)은 도금제로 구리 도금의 경우 구리볼 또는 구리판일 수 있다.The negative electrode plate 220 may be a substrate to be plated and used in a semiconductor wiring process, and the positive electrode plate 210 may be a copper ball or a copper plate in the case of copper plating as a plating agent.
상기 진공챔버(300)는 내부에 상기 도금조(100)가 수용되도록 일정 공간이 형성되며, 진공도를 조절하는 진공도 조절장치(400)와 연결되어 진공 상태를 유지하게 된다.The vacuum chamber 300 has a predetermined space is formed so that the plating bath 100 is accommodated therein, and is connected to a vacuum degree control device 400 for adjusting the degree of vacuum to maintain a vacuum state.
상기 가열장치(500)는 상기 도금조(100) 내에 수용되는 도금액의 온도를 조절하는 장치로, 진공 상태에서 낮은 압력으로 인해 도금액 중 물이 증발되면서 도금액의 온도가 내려가게 되는데, 이 때, 도금액이 얼어버리는 현상을 방지하기 위해 가열하는 장치이다.The heating device 500 is a device for adjusting the temperature of the plating liquid contained in the plating bath 100, the temperature of the plating liquid is lowered while the water in the plating liquid evaporates due to the low pressure in the vacuum state, at this time, the plating liquid This device is heated to prevent freezing.
본 발명의 진공 도금 장치(10)는 상기 양극판(210) 및 음극판(220)에 각각 연결되어 전류를 통전시키는 정류기(600)를 더 포함하여 형성될 수 있는데, 이 때, 상기 도금조(100) 내에 수용되는 도금액은 전해질 용액일 수 있다.The vacuum plating apparatus 10 of the present invention may be formed by further comprising a rectifier 600 connected to the positive electrode plate 210 and the negative electrode plate 220 to conduct a current, in this case, the plating bath 100 The plating liquid contained therein may be an electrolyte solution.
상기와 같은 구성은 본 발명의 진공 도금 장치(10)가 전해 도금을 위해 사용되기 위한 것이며, 상기 정류기(600)의 작동으로 상기 양극판(210) 및 음극판(220)에 전류가 통전되면 전기분해를 거쳐 상기 음극판(220)이 도금된다.Such a configuration is for the vacuum plating apparatus 10 of the present invention to be used for electrolytic plating, the electrolysis is performed when the current is supplied to the positive electrode plate 210 and the negative electrode plate 220 by the operation of the rectifier 600. The negative electrode plate 220 is plated through.
반면, 본 발명의 진공 도금 장치(10)는 무전해 도금을 위해 사용되기 위해서 환원제를 포함한 무전해 도금용 도금액이 사용될 수도 있다.On the other hand, in the vacuum plating apparatus 10 of the present invention, an electroless plating plating solution including a reducing agent may be used to be used for electroless plating.
전해 도금 및 무전해 도금은 이미 널리 알려진 기술이므로, 본 명세서에서는 상세한 설명을 생략하기로 한다.Since electrolytic plating and electroless plating are well known techniques, detailed descriptions will be omitted herein.
한편, 본 발명의 진공 도금 장치(10)는 상기 진공챔버(300) 내부의 진공도가 너무 높으면 도금액이 끓어 넘치게 되므로 적절한 진공도를 유지할 필요가 있는데, 이를 위해 진공도 조절장치(400)가 구비된다. 상기 진공도 조절장치(400)는 진공게이지(410), 환기밸브(420) 및 진공펌프(430)를 포함하여 형성될 수 있다.On the other hand, in the vacuum plating apparatus 10 of the present invention, if the degree of vacuum in the vacuum chamber 300 is too high, the plating liquid is boiled, and thus it is necessary to maintain an appropriate degree of vacuum, for which the vacuum degree adjusting device 400 is provided. The vacuum degree control device 400 may be formed to include a vacuum gauge 410, a ventilation valve 420 and a vacuum pump 430.
상기 진공게이지(410)는 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 진공챔버(300) 내의 진공도를 측정하는 것이며, 상기 환기밸브(420)는 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하게 된다.The vacuum gauge 410 is installed in the vent hole 310 of the vacuum chamber 300 to measure the degree of vacuum in the vacuum chamber 300, the vent valve 420 is a vent hole of the vacuum chamber (300) It is installed in 310 to control the opening and closing of the ventilation opening (310).
또한, 상기 진공펌프(430)는 상기 진공챔버(300)와 연결되어 상기 진공챔버(300)를 진공상태로 만들어주게 된다.In addition, the vacuum pump 430 is connected to the vacuum chamber 300 to make the vacuum chamber 300 in a vacuum state.
이에 따라, 본 발명의 진공 도금 장치(10)는 상기 진공챔버(300)의 환기구(310)에 연결되는 진공게이지(410)를 통해 내부의 진공도가 어느 정도인지 파악할 수 있게 되며, 적정한 진공챔버(300) 내부가 적절한 진공도에 도달되도록 하거나, 적절한 진공도를 유지하기 위해 진공펌프(430)를 작동시킨다.Accordingly, the vacuum plating apparatus 10 of the present invention can determine the degree of the internal vacuum degree through the vacuum gauge 410 connected to the ventilation hole 310 of the vacuum chamber 300, the appropriate vacuum chamber ( 300) The vacuum pump 430 is operated to allow the inside to reach an appropriate degree of vacuum or to maintain an appropriate degree of vacuum.
또한, 본 발명의 진공 도금 장치(10)는 상기 진공챔버(300) 내부의 진공상태를 해제하기 위해서는 상기 환기밸브(420)를 개방하여 상기 진공챔버(300) 내ㆍ외부의 공기가 유동될 수 있도록 한다.In addition, in the vacuum plating apparatus 10 of the present invention, in order to release the vacuum state inside the vacuum chamber 300, the air inside and outside the vacuum chamber 300 may flow by opening the ventilation valve 420. Make sure
상술한 바와 같이, 본 발명의 진공 도금 장치(10)는 진공 상태에서 낮은 압력으로 인해 도금액에 포함된 물이 수증기 상태로 증발하는 현상이 발생될 수 있는데, 증발하는 과정에서 상기 진공펌프(430)로 수증기가 유입되지 않도록 상기 진공챔버(300)와 진공펌프(430) 사이에 설치되어 수증기를 필터링하는 트랩부(320)를 포함하여 형성될 수 있다.As described above, in the vacuum plating apparatus 10 of the present invention, a phenomenon in which water contained in the plating liquid evaporates to a vapor state may occur due to low pressure in a vacuum state, and the vacuum pump 430 is evaporated. It may be formed between the vacuum chamber 300 and the vacuum pump 430 is installed between the trap unit 320 to filter the steam so that steam does not flow into the furnace.
또한, 본 발명의 진공 도금 장치(10)는 도금액의 증발로 상기 도금조(100) 내의 도금액이 적정 수위를 유지하지 못하는 것을 방지하기 위해, 상기 도금조(100)에 도금액을 보충하여 적정수위를 유지하도록 하는 도금액 보충장치(700)를 더 포함하여 형성될 수 있다.In addition, in order to prevent the plating solution in the plating bath 100 from maintaining the proper level due to the evaporation of the plating solution, the vacuum plating apparatus 10 of the present invention replenishes the plating solution in the plating bath 100 to increase the appropriate water level. It may be formed by further comprising a plating liquid refilling apparatus 700 to maintain.
다시 말해, 본 발명의 진공 도금 장치(10)는 진공 상태를 이용하여 기포의 배출이 용이하도록 하기 위한 구성으로 인해 생길 수 있는 문제점, 즉 도금액의 증발에 의해 수증기가 발생되고 도금액이 얼거나, 도금액의 수위가 낮아지는 것과 같은 현상을 방지할 수 있도록 트랩부(320), 가열장치(500), 도금액 보충장치(700)를 더 포함하여 형성된다.In other words, the vacuum plating apparatus 10 of the present invention is a problem that may arise due to the configuration to facilitate the discharge of bubbles by using a vacuum state, that is, water vapor is generated by the evaporation of the plating liquid, the plating liquid is frozen, or the plating liquid The trap unit 320, the heating device 500, and the plating solution refilling device 700 may be further included to prevent a phenomenon such as a low water level.
이에 따라, 본 발명의 진공 도금 장치(10)는 진공펌프(430)를 이용하여 상기 진공챔버(300) 내부를 진공 상태로 만들어줌으로써, 도금 전처리 공정 또는 도금 공정 중에 발생되는 기포의 배출 및 제거가 용이하게 됨에 따라, 도금물의 기계적 전기적 열화를 효과적으로 방지하고, 도금 성능을 향상시킬 수 있다.Accordingly, the vacuum plating apparatus 10 of the present invention uses the vacuum pump 430 to make the inside of the vacuum chamber 300 in a vacuum state, thereby preventing the discharge and removal of bubbles generated during the plating pretreatment process or the plating process. As it becomes easy, it is possible to effectively prevent the mechanical and electrical deterioration of the plating, and to improve the plating performance.
또한, 본 발명의 진공 도금 장치(10) 및 진공 도금 방법은 진공 상태에서 무전해 또는 전해 도금 공정이 이루어지되, 진공 상태에서 저압으로 인해 도금액의 물이 증발되고, 얼어 버리는 현상을 방지하여 도금 공정이 원활하게 이루어지도록 할 수 있다.In addition, in the vacuum plating apparatus 10 and the vacuum plating method of the present invention, the electroless or electrolytic plating process is performed in a vacuum state, but the plating process by preventing the phenomenon that water in the plating liquid evaporates and freezes due to low pressure in the vacuum state. This can be done smoothly.
도 5에 도시된 바와 같이, 본 발명의 진공 도금 장치(10)는 도금액에 초음파를 가해주어 미세한 떨림에 의해 기포가 잘 배출될 수 있도록 하기 위한 초음파 발생장치(800)를 포함하여 형성될 수 있다.As shown in FIG. 5, the vacuum plating apparatus 10 of the present invention may include an ultrasonic generator 800 for applying ultrasonic waves to the plating liquid so that bubbles can be well discharged by fine shaking. .
상기 초음파 발생장치(800)는 진공 상태에서 작동될 수도 있으며, 진공 상태 전ㆍ후에 추가로 작동되어 기포의 배출을 극대화시킬 수 있다.The ultrasonic wave generator 800 may be operated in a vacuum state, and may be further operated before and after the vacuum state to maximize the discharge of bubbles.
또 다른 실시 예로, 도 6에 도시된 바와 같이, 본 발명의 진공 도금 장치(10)는 기포가 잘 배출될 수 있도록 도금액을 휘저어 섞어주는 교반장치(900)를 더 포함하여 형성될 수도 있다.In another embodiment, as shown in FIG. 6, the vacuum plating apparatus 10 of the present invention may further include a stirring device 900 which stirs the plating liquid so that bubbles are well discharged.
상술한 바와 같은 초음파 발생장치(800) 및 교반장치(900)와 같은 구성은 도 3에 도시된 deep type의 도금 방식과, 도 5에 도시된 cup type의 도금 방식에 모두 적용될 수 있다.Configurations such as the ultrasonic generator 800 and the stirring apparatus 900 as described above may be applied to both the deep type plating method shown in FIG. 3 and the cup type plating method shown in FIG. 5.
한편, 도 7에 도시된 바와 같이, 본 발명의 진공 도금 장치(10)를 이용한 진공 도금 방법은 a) 도금제인 양극판(210) 및 피도금물인 음극판(220)을 도금액이 수용되는 도금조(100) 내에 배치하는 배치 단계(S100); b) 상기 양극판(210) 및 음극판(220)에 전류를 통전시켜주는 정류기(600)를 연결하는 정류기(600) 설치 단계(S200); c) 상기 도금조(100)가 수용되는 진공챔버(300)를 밀폐시킨 다음, 상기 진공챔버(300)의 진공도를 조절하는 진공도 조절장치(400)에 의해 상기 진공챔버(300) 내에 적정량의 진공도를 유지시키는 진공 단계(S300); d) 상기 도금조(100)가 진공상태가 되어 도금액 내의 기포가 밖으로 배출되는 기포 배출 단계(S400); e) 배출된 도금액의 기포가 제거된 다음, 상기 정류기(600)를 작동시켜 음극판(220)을 도금하는 도금 단계(S500); 가 순차적으로 진행된다.On the other hand, as shown in Figure 7, the vacuum plating method using the vacuum plating apparatus 10 of the present invention is a) a plating bath in which the plating liquid is accommodated in the positive electrode plate 210, which is a plating agent and the negative electrode plate 220, which is to be plated ( An arrangement step (S100) disposed in 100); b) a rectifier (600) installation step (S200) for connecting the rectifier 600 for conducting current to the positive electrode plate 210 and the negative electrode plate 220; c) After sealing the vacuum chamber 300 in which the plating bath 100 is accommodated, the appropriate degree of vacuum in the vacuum chamber 300 by a vacuum degree control device 400 for adjusting the vacuum degree of the vacuum chamber 300 Maintaining a vacuum step (S300); d) a bubble discharge step (S400) in which the plating bath 100 is in a vacuum state and bubbles in the plating liquid are discharged out; e) a plating step of plating the negative electrode plate 220 by operating the rectifier 600 after removing the bubbles of the discharged plating solution (S500); Proceeds sequentially.
다시 한 번 설명하면, 본 발명의 진공 도금 방법은 도금하려고 하는 음극판(220)과 도금제인 양극판(210)을 도금조(100) 내에 설치하여 정류기(600)의 음극과 양극을 각각 연결하여 설치하게 된다.In other words, in the vacuum plating method of the present invention, the negative electrode plate 220 to be plated and the positive electrode plate 210 which is a plating agent are installed in the plating bath 100 to connect the negative electrode and the positive electrode of the rectifier 600, respectively. do.
그 다음, 상기 진공챔버(300)를 닫고, 환기밸브(420)를 잠그고 나서, 상기 진공펌프(430)를 작동시켜 상기 진공챔버(300) 내 도금조(100)가 적절한 진공도의 진공상태가 되도록 한다. 상기와 같은 진공도 조절 과정을 통해 상기 도금조(100)가 적절한 진공도를 유지하게 되면, 도금액 내의 기포가 도금액 밖으로 나오게 되는데, 이 때, 상기 정류기(600)를 작동시켜 상기 음극판(220)을 도금하게 된다.Then, the vacuum chamber 300 is closed, the ventilation valve 420 is closed, and the vacuum pump 430 is operated so that the plating bath 100 in the vacuum chamber 300 is in a vacuum state of an appropriate degree of vacuum. do. When the plating bath 100 maintains an appropriate vacuum degree through the vacuum degree control process as described above, bubbles in the plating solution come out of the plating solution. At this time, the rectifier 600 is operated to plate the negative electrode plate 220. do.
본 발명의 진공 도금 방법은 도금이 끝난 다음, f) 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하는 환기밸브(420)를 개방하여 상기 도금조(100)의 진공상태가 해제된 다음, 도금이 완료된 음극판(220)을 꺼내는 환기 단계(S600); 가 더 수행될 수 있다.In the vacuum plating method of the present invention, after the plating is finished, f) is installed in the vent port 310 of the vacuum chamber 300 to open the vent valve 420 to control the opening and closing of the vent port 310 to the plating bath ( After the vacuum state of the 100 is released, a ventilation step (S600) for taking out the plated cathode plate 220 is completed; May be further performed.
또한, 본 발명의 진공 도금 방법은 a) 내지 e) 단계 중 어느 하나 이상에서 도금액에 초음파를 가해주는 초음파 발생장치(800)가 작동되어 기포의 배출이 극대화되도록 할 수 있는데, 결론적으로, 본 발명의 진공 도금 방법을 이용한 진공 도금 작업은 진공상태가 유지된 상태에서 초음파 발생장치(800)가 작동될 수도 있으며, 초음파 발생장치(800)만 단독으로 작동되어 기포의 배출을 유도할 수도 있고, 초음파 발생장치(800) 없이 진공상태만을 유지한 상태에서 수행될 수도 있다.In addition, the vacuum plating method of the present invention may operate the ultrasonic generator 800 for applying an ultrasonic wave to the plating liquid in any one or more of steps a) to e) to maximize the discharge of the bubble, in conclusion, the present invention In the vacuum plating operation using the vacuum plating method of the ultrasonic generator 800 may be operated while the vacuum state is maintained, only the ultrasonic generator 800 may be operated alone to induce the discharge of bubbles, ultrasonic It may be performed in a state in which only the vacuum state is maintained without the generator 800.
또한, 본 발명의 진공 도금 방법은 a) 내지 e) 단계 중 어느 하나 이상에서 도금액을 휘저어 섞어주는 교반장치(900)가 작동되어 기포의 배출이 극대화 되도록 할 수 있다. 상기 교반장치(900)의 작동은 상기 초음파 발생장치(800)와 마찬가지로, 단독으로 작동될 수도 있으며, 진공상태가 유지된 상태에서 함께 작동될 수도 있다.In addition, in the vacuum plating method of the present invention, the stirring device 900 which stirs the plating liquid in any one or more of steps a) to e) may be operated to maximize the discharge of bubbles. Like the ultrasonic wave generator 800, the operation of the stirring device 900 may be operated alone, or may be operated together in a vacuum state.
이에 따라, 본 발명의 진공 도금 장치(10) 및 진공 도금 방법은 초음파 발생장치(800)를 이용하여 도금액에 초음파를 가해주거나, 교반장치(900)를 통해 도금액을 휘저어 줌으로써, 기포의 배출이 용이하며, 도금 성능을 보다 높일 수 있는 장점이 있다.Accordingly, in the vacuum plating apparatus 10 and the vacuum plating method of the present invention, ultrasonic waves are applied to the plating liquid by using the ultrasonic generator 800 or by stirring the plating liquid through the stirring apparatus 900, thereby easily discharging bubbles. And, there is an advantage to increase the plating performance.
한편, 본 발명의 진공 도금 방법은 상기 도금조(100)가 진공상태가 되는 c) 단계에서 도금액의 증발에도 불구하고 도금액이 적정온도 및 적정수위를 유지할 수 있도록 도금액의 온도를 조절하는 가열장치(500)와, 상기 도금조(100)에 도금액을 보충하는 도금액 보충장치(700)가 작동될 수도 있다.On the other hand, the vacuum plating method of the present invention is a heating device for controlling the temperature of the plating liquid so that the plating liquid maintains the proper temperature and the appropriate water level in spite of the evaporation of the plating liquid in the step c) the plating bath 100 is in a vacuum state ( 500 and the plating solution refilling apparatus 700 for replenishing the plating solution with the plating bath 100 may be operated.
본 발명은 상기한 실시 예에 한정되지 아니하며, 적용범위가 다양함은 물론이고, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이다.The present invention is not limited to the above-described embodiments, and the scope of application of the present invention is not limited to those of ordinary skill in the art to which the present invention pertains without departing from the gist of the present invention as claimed in the claims. Of course, various modifications can be made.
Claims (13)
- 피도금물에 전해 도금 또는 무전해 도금하는 장치에 있어서,In the device for electrolytic plating or electroless plating on the plated object,도금액이 수용되는 도금조(100);A plating bath 100 in which a plating solution is accommodated;수평 또는 수직으로 일정 간격 이격되어 나란하게 상기 도금조(100) 내에 배치되는 도금제인 양극판(210)과, 피도금물인 음극판(220);A positive electrode plate 210 which is a plating agent disposed in the plating bath 100 in parallel or spaced apart at a predetermined interval horizontally or vertically, and a negative electrode plate 220 which is a plated object;상기 도금조(100)가 내부에 수용되며, 진공 상태를 유지하도록 조절되는 진공챔버(300);The plating chamber 100 is accommodated therein, the vacuum chamber 300 is adjusted to maintain a vacuum state;상기 진공챔버(300)에 연결되어 진공도를 조절하는 진공도 조절장치(400); 및A vacuum degree adjusting device 400 connected to the vacuum chamber 300 to adjust the degree of vacuum; And상기 도금조(100) 내에 수용되는 도금액의 온도를 조절하는 가열장치(500); 를 포함하여 형성되는 것을 특징으로 하는 진공 도금 장치.A heating device 500 for controlling the temperature of the plating liquid accommodated in the plating bath 100; Vacuum plating apparatus characterized in that it is formed, including.
- 제 1항에 있어서,The method of claim 1,상기 진공 도금 장치(10)는The vacuum plating apparatus 10상기 양극판(210) 및 음극판(220)에 각각 연결되어 전류를 통전시키는 정류기(600)를 포함하여 형성되며, 도금액이 전해질 용액인 것을 특징으로 하는 진공 도금 장치.And a rectifier (600) connected to the positive electrode plate (210) and the negative electrode plate (220) to conduct current, respectively, wherein the plating solution is an electrolyte solution.
- 제 1항에 있어서,The method of claim 1,상기 진공 도금 장치(10)는The vacuum plating apparatus 10도금액이 환원제를 포함한 무전해 도금용 도금액인 것을 특징으로 하는 진공 도금 장치.The plating solution is a plating solution for electroless plating containing a reducing agent.
- 제 2항 및 3항 중 어느 한 항에 있어서,The method according to any one of claims 2 and 3,상기 진공도 조절장치(400)는The vacuum degree control device 400상기 진공챔버(300)의 환기구(310)에 설치되어 상기 진공챔버(300) 내의 진공도를 측정하는 진공게이지(410); 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하는 환기밸브(420); 및 상기 진공챔버(300)와 연결되어 상기 진공챔버(300)를 진공상태로 만들어주는 진공펌프(430); 를 포함하여 형성되는 것을 특징으로 하는 진공 도금 장치.A vacuum gauge 410 installed at the ventilation hole 310 of the vacuum chamber 300 to measure the degree of vacuum in the vacuum chamber 300; A ventilation valve 420 installed at the ventilation hole 310 of the vacuum chamber 300 to control the opening and closing of the ventilation hole 310; And a vacuum pump 430 connected to the vacuum chamber 300 to make the vacuum chamber 300 in a vacuum state. Vacuum plating apparatus characterized in that it is formed, including.
- 제 4항에 있어서,The method of claim 4, wherein상기 진공 도금 장치(10)는The vacuum plating apparatus 10증발된 도금액이 상기 진공펌프(430)로 넘어가지 않도록 필터링 하며, 상기 진공챔버(300)와 진공펌프(430) 사이에 설치되는 트랩부(320)를 포함하는 것을 특징으로 하는 진공 도금 장치.Filtering the evaporated plating solution so as not to fall into the vacuum pump (430), characterized in that it comprises a trap unit 320 which is installed between the vacuum chamber 300 and the vacuum pump (430).
- 제 5항에 있어서,The method of claim 5,상기 진공 도금 장치(10)는The vacuum plating apparatus 10상기 도금조(100)에 도금액을 보충하는 도금액 보충장치(700)를 더 포함하는 것을 특징으로 하는 진공 도금 장치.Vacuum plating apparatus characterized in that it further comprises a plating liquid replenishment device 700 for replenishing the plating liquid in the plating bath (100).
- 제 6항에 있어서,The method of claim 6,상기 진공 도금 장치(10)는The vacuum plating apparatus 10도금액에 초음파를 가해주는 초음파 발생장치(800)를 포함하는 것을 특징으로 하는 진공 도금 장치.Vacuum plating apparatus comprising an ultrasonic generator for applying an ultrasonic wave to the plating liquid.
- 제 6항에 있어서,The method of claim 6,상기 진공 도금 장치(10)는The vacuum plating apparatus 10도금액을 휘저어 섞어주는 교반장치(900)를 더 포함하는 것을 특징으로 하는 진공 도금 장치.Vacuum plating apparatus characterized in that it further comprises a stirring device (900) for stirring the plating liquid.
- 진공 도금 장치(10)를 이용한 진공 도금 방법에 있어서,In the vacuum plating method using the vacuum plating apparatus 10,a) 도금제인 양극판(210) 및 피도금물인 음극판(220)을 도금액이 수용되는 도금조(100) 내에 배치하는 배치 단계(S100);a) a disposing step (S100) of disposing a positive electrode plate 210, which is a plating agent, and a negative electrode plate 220, which is to be plated, in a plating bath 100 in which a plating solution is accommodated;b) 상기 양극판(210) 및 음극판(220)에 전류를 통전시켜주는 정류기(600)를 연결하는 정류기(600) 설치 단계(S200);b) a rectifier (600) installation step (S200) for connecting the rectifier 600 for conducting current to the positive electrode plate 210 and the negative electrode plate 220;c) 상기 도금조(100)가 수용되는 진공챔버(300)를 밀폐시킨 다음, 상기 진공챔버(300)의 진공도를 조절하는 진공도 조절장치(400)에 의해 상기 진공챔버(300) 내에 적정량의 진공도를 유지시키는 진공 단계(S300);c) After sealing the vacuum chamber 300 in which the plating bath 100 is accommodated, the appropriate degree of vacuum in the vacuum chamber 300 by a vacuum degree control device 400 for adjusting the vacuum degree of the vacuum chamber 300 Maintaining a vacuum step (S300);d) 상기 도금조(100)가 진공상태가 되어 도금액 내의 기포가 밖으로 배출되는 기포 배출 단계(S400);d) a bubble discharge step (S400) in which the plating bath 100 is in a vacuum state and bubbles in the plating liquid are discharged out;e) 배출된 도금액의 기포가 제거된 다음, 상기 정류기(600)를 작동시켜 상기 음극판(220)을 도금하는 도금 단계(S500); 를 포함하는 것을 특징으로 하는 진공 도금 방법.e) a plating step of plating the negative electrode plate 220 by removing the bubbles of the discharged plating solution and then operating the rectifier 600; Vacuum plating method comprising a.
- 제 9항에 있어서,The method of claim 9,상기 진공 도금 방법은The vacuum plating methodf) 상기 진공챔버(300)의 환기구(310)에 설치되어 상기 환기구(310)의 개폐를 조절하는 환기밸브(420)를 개방하여 상기 도금조(100)의 진공상태가 해제된 다음, 도금이 완료된 음극판(220)을 꺼내는 환기 단계(S600); 를 더 포함하는 것을 특징으로 하는 진공 도금 방법.f) the vacuum chamber of the plating bath 100 is released by opening the ventilation valve 420 installed in the ventilation port 310 of the vacuum chamber 300 to control the opening and closing of the ventilation port 310, and then the plating is performed. Ventilation step (S600) for taking out the completed negative plate 220; Vacuum plating method further comprising.
- 제 9항에 있어서,The method of claim 9,상기 진공 도금 방법은The vacuum plating methoda) 내지 e) 단계 중 어느 하나 이상에서in any one or more of steps a) to e)도금액에 초음파를 가해주는 초음파 발생장치(800)가 작동되어 기포가 배출되도록 하는 것을 특징으로 하는 진공 도금 방법.Ultrasonic plating device for applying an ultrasonic wave to the plating solution 800 is a vacuum plating method characterized in that the bubbles are discharged.
- 제 9항에 있어서,The method of claim 9,상기 진공 도금 방법은The vacuum plating methoda) 내지 e) 단계 중 어느 하나 이상에서in any one or more of steps a) to e)도금액을 휘저어 섞어주는 교반장치(900)가 작동되어 기포가 배출되도록 하는 것을 특징으로 하는 진공 도금 방법.A stirring apparatus 900 for stirring the plating liquid to operate the vacuum plating method characterized in that the bubbles are discharged.
- 제 9항에 있어서,The method of claim 9,상기 진공 도금 방법은The vacuum plating methodc) 단계에서 도금액이 적정온도 및 적정수위를 유지하도록c) in order to maintain the proper temperature and level도금액의 온도를 조절하는 가열장치(500)와, 상기 도금조(100)에 도금액을 보충하는 도금액 보충장치(700)가 작동되는 것을 특징으로 하는 진공 도금 방법.And a heating device (500) for controlling the temperature of the plating liquid, and a plating liquid replenishing device (700) for replenishing the plating liquid in the plating bath (100).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0075169 | 2011-07-28 | ||
KR1020110075169A KR20130013488A (en) | 2011-07-28 | 2011-07-28 | Vacuum plating method and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013015491A1 true WO2013015491A1 (en) | 2013-01-31 |
Family
ID=47601297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/008310 WO2013015491A1 (en) | 2011-07-28 | 2011-11-02 | Apparatus and method for vacuum coating |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20130013488A (en) |
WO (1) | WO2013015491A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105442007A (en) * | 2015-12-24 | 2016-03-30 | 中国振华电子集团宇光电工有限公司(国营第七七一厂) | Efficient brush plating equipment for vacuum arc-extinguishing chamber |
US10487411B1 (en) * | 2018-04-16 | 2019-11-26 | Guangdong University Of Technology | Method for synchronous electroplating filling of differential vias and electroplating device implementing same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990029433A (en) * | 1997-09-02 | 1999-04-26 | 마에다 시게루 | Method and apparatus for plating substrate |
JP2000160349A (en) * | 1998-11-27 | 2000-06-13 | Ebara Corp | Electroless plating device |
KR20010033965A (en) * | 1998-11-09 | 2001-04-25 | 마에다 시게루 | Plating method and apparatus |
KR20030053222A (en) * | 2001-12-22 | 2003-06-28 | 주식회사 하이닉스반도체 | Cu ELECTROPLATING APPARATUS CAPABLE OF REMOVING MICRO-BUBBLE |
-
2011
- 2011-07-28 KR KR1020110075169A patent/KR20130013488A/en not_active Application Discontinuation
- 2011-11-02 WO PCT/KR2011/008310 patent/WO2013015491A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990029433A (en) * | 1997-09-02 | 1999-04-26 | 마에다 시게루 | Method and apparatus for plating substrate |
KR20010033965A (en) * | 1998-11-09 | 2001-04-25 | 마에다 시게루 | Plating method and apparatus |
JP2000160349A (en) * | 1998-11-27 | 2000-06-13 | Ebara Corp | Electroless plating device |
KR20030053222A (en) * | 2001-12-22 | 2003-06-28 | 주식회사 하이닉스반도체 | Cu ELECTROPLATING APPARATUS CAPABLE OF REMOVING MICRO-BUBBLE |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105442007A (en) * | 2015-12-24 | 2016-03-30 | 中国振华电子集团宇光电工有限公司(国营第七七一厂) | Efficient brush plating equipment for vacuum arc-extinguishing chamber |
CN105442007B (en) * | 2015-12-24 | 2018-06-22 | 中国振华电子集团宇光电工有限公司(国营第七七一厂) | A kind of efficient vacuum interrupter brush plating equipment |
US10487411B1 (en) * | 2018-04-16 | 2019-11-26 | Guangdong University Of Technology | Method for synchronous electroplating filling of differential vias and electroplating device implementing same |
Also Published As
Publication number | Publication date |
---|---|
KR20130013488A (en) | 2013-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9376758B2 (en) | Electroplating method | |
KR101832487B1 (en) | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system | |
TWI382799B (en) | Method for filling through hole | |
US5441629A (en) | Apparatus and method of electroplating | |
TWI531418B (en) | Wetting a workpiece surface in a fluid-processing system | |
EP2017374A2 (en) | Plating apparatus and method | |
CN105765111A (en) | Electrochemical deposition apparatus with remote catholyte fluid management | |
WO2013015491A1 (en) | Apparatus and method for vacuum coating | |
EP1793017B1 (en) | Plating apparatus and plating liquid removing method | |
US20070158202A1 (en) | Plating apparatus and method for controlling plating solution | |
TW201247946A (en) | Electroplating method | |
EP2593717A2 (en) | Steam generation device for automatic water supply using self vapor pressure | |
CN113423874B (en) | Electroplating device and electroplating method | |
Engelmaier et al. | Investigation of Agitation Effects on Electroplated Copper in Multilayer Board Plated‐Through Holes in a Forced‐Flow Plating Cell | |
TW202108829A (en) | Anode holder, plating device, and plating method | |
US20010039118A1 (en) | Liquid treatment equipment, liquid treatment method, semiconductor device manufacturing method, and semiconductor device manufacturing equipment | |
JP3328812B2 (en) | Cathode and anode cartridges for electroplating testers | |
CN113943966A (en) | Electroplating device and electroplating method for circuit board | |
CN108546968B (en) | A kind of differentiation hole is synchronous to be electroplated the method filled and electroplanting device | |
JP2000256891A (en) | Electroplating method and anode structural body | |
KR20100077447A (en) | Wafer plating apparatus | |
CN110952109A (en) | Multi-stage electrolytic tank | |
JP3715846B2 (en) | Board plating equipment | |
WO2016003111A1 (en) | Plating device for solar cell substrate, using both electroplating and light induced plating | |
KR101122793B1 (en) | Wafer plating apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11869955 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11869955 Country of ref document: EP Kind code of ref document: A1 |