WO2013014831A1 - Method for fracturing polycrystalline silicon rod - Google Patents

Method for fracturing polycrystalline silicon rod Download PDF

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Publication number
WO2013014831A1
WO2013014831A1 PCT/JP2012/002691 JP2012002691W WO2013014831A1 WO 2013014831 A1 WO2013014831 A1 WO 2013014831A1 JP 2012002691 W JP2012002691 W JP 2012002691W WO 2013014831 A1 WO2013014831 A1 WO 2013014831A1
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polycrystalline silicon
silicon rod
impact force
crushing
central axis
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PCT/JP2012/002691
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French (fr)
Japanese (ja)
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秀一 宮尾
岡田　淳一
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信越化学工業株式会社
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

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  • the present invention relates to a method for crushing a polycrystalline silicon rod to obtain a polycrystalline silicon lump used for a nugget for charging a crucible for silicon single crystal growth by the CZ method.
  • Polycrystalline silicon having high purity is generally produced by a so-called Siemens method.
  • Siemens method a polycrystalline silicon rod (polycrystalline silicon rod) is obtained by growing (depositing) a silicon polycrystal on a heated silicon core wire by a CVD method.
  • Such polycrystalline silicon rods are currently over 100 mm in diameter and over 2000 mm in length.
  • Such a polycrystalline silicon rod is crushed into a polycrystalline silicon lump (crushed polycrystalline silicon), and is used, for example, as a nugget that is a raw material for silicon single crystal growth by the CZ method.
  • the polycrystalline silicon rod When processing a polycrystalline silicon rod into a raw material for silicon single crystal growth, etc., if the rod is crushed to a size that can be easily handled in advance, it is relatively easy to further crush it into a nugget size. It is.
  • the polycrystalline silicon rod has a large size of more than 100 mm in diameter and more than 2000 mm in length, and it is necessary to crush while preventing contamination in order to ensure the quality as a raw material for semiconductor manufacturing. Therefore, crushing work at an actual manufacturing site is not so easy.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 7-618008
  • a rod is cracked by thermal shock by rapidly heating polycrystalline silicon deposited and grown in a rod shape by a thermal CVD method using a laser.
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2011-46594 proposes a method in which a rod is cracked by causing local cooling after heating the rod.
  • Patent Document 3 Japanese Patent Application Laid-Open No. Hei 8-109903 describes that a manual hammer is used to crush the silicon lump as large as a fist.
  • any of the conventionally proposed methods for crushing polycrystalline silicon rods has room for improvement from the viewpoint of preventing contamination and productivity.
  • a method involving heating as disclosed in Patent Documents 1 and 2 requires a relatively large apparatus and complicated operations.
  • the method involving high-temperature heating as disclosed in Patent Document 2 is susceptible to contamination from the heating furnace.
  • the present invention has been made in view of the problems of such a conventional crushing method, and the object of the present invention is to provide a method for crushing a polycrystalline silicon rod that is easy to operate and hardly contaminates or contains foreign matter. It is to provide.
  • a polycrystalline silicon rod crushing method is a method for crushing a columnar polycrystalline silicon rod, wherein a mechanical component is provided in the central axis direction of the polycrystalline silicon rod. Applying an impact force of 1 to one end of the polycrystalline silicon rod to generate a first elastic wave, and crushing it into a polycrystalline silicon lump having a crushing surface that divides the central axis of the polycrystalline silicon rod; It is characterized by.
  • the method for crushing a polycrystalline silicon rod according to the present invention further includes applying a second impact force to the polycrystalline silicon rod within a time of less than 2 seconds before or after applying the first impact force.
  • a second impact force to the polycrystalline silicon rod within a time of less than 2 seconds before or after applying the first impact force.
  • the second impact force is applied to the other end which is the opposite end to the one end where the first impact force is applied to the polycrystalline silicon rod.
  • the application of the first impact force is performed in a state in which the other end which is the end opposite to the one end of the polycrystalline silicon rod is fixed.
  • the present invention provides a method for crushing a polycrystalline silicon rod that is easy to operate and hardly contaminates or contains foreign matter.
  • FIG. It is a figure for demonstrating the mode of crushing which gives the impact force of Example 3.
  • FIG. It is a figure for demonstrating a mode at the time of giving an impact on the single crystal silicon rod on the same conditions as Example 3 (comparative example 2).
  • FIG. It is a figure for demonstrating the mode of the crushing which gives the impact force of Example 4.
  • FIG. It is a figure for demonstrating the mode of crushing which gives the impact force of Example 5.
  • FIG. It is a figure for demonstrating the mode of crushing which gives the impact force of Example 6.
  • FIG. 1A is a cross-sectional view illustrating the most basic aspect of the polycrystalline silicon rod crushing method of the present invention.
  • reference numeral 10 is a columnar polycrystalline silicon rod
  • the axis indicated by C is the central axis (long axis) of the polycrystalline silicon rod 10.
  • silicon rods generally used have a length in the major axis direction of about 1500 to 2500 mm.
  • an impact force F 1 first impact force having a mechanical component in the direction of the central axis C is applied to one end portion of the polycrystalline silicon rod 10 by striking or the like. .
  • This impact force (striking force) F 1 generates an elastic wave (first elastic wave) inside the polycrystalline silicon rod 10 and divides the central axis C of the polycrystalline silicon rod 10 by this elastic wave. Crushing into a polycrystalline silicon lump having a crushing surface 1.
  • Examples of the method for applying the impact force include a manual hammer and an impact pulverizer.
  • the application of the first impact force is preferably performed in a state in which the other end, which is the end opposite to the one end of the polycrystalline silicon rod 10, is fixed.
  • the present inventors have fixed the end portion of the polycrystalline silicon rod 10 opposite to the end portion to which the first impact force is applied, so that the first impact force is fixed. It is considered that when the elastic wave generated by is reflected at the fixed end, the attenuation is suppressed and a strong standing wave-like elastic wave is formed.
  • the polycrystalline silicon rod 10 may be fixed, for example, by pressing the other end of the polycrystalline silicon rod 10 laid horizontally against a wall or a barrier provided on a jig on which the polycrystalline silicon rod 10 is placed. . There may be a method in which the polycrystalline silicon rod 10 is vertically set on the floor surface and an impact force is applied from above. However, since the polycrystalline silicon rod 10 is crushed in a manner that its long axis is divided, the safety aspect is increased. Is not preferable.
  • the impact force need not have a mechanical component only in the direction of the central axis C of the polycrystalline silicon rod 10 as shown in FIG. 1A.
  • the mechanical component F ′ 1 h in the direction of the central axis C of the polycrystalline silicon rod 10 and the mechanical component F ′ 1 v in the direction perpendicular to the central axis C are synthesized. It may be what was done.
  • the mechanical component F ′ 1h in the direction of the central axis C of the polycrystalline silicon rod 10 of the impact force is converted into the mechanical component in the direction perpendicular to the central axis C. It is preferable that it is larger than F ′ 1v . As shown in FIG. 1A, if an impact force is applied from the direction of the central axis C of the polycrystalline silicon rod 10 (a direction parallel to the center axis C), crushing can be most efficiently caused.
  • an impact force can be performed by a manual hammer, an impact pulverizer, or the like.
  • the impact force is sufficiently strong in order to prevent contamination from the jig to be used, mixing of foreign matters, and the like.
  • a jig made of a high strength material such as tungsten carbide or titanium can be exemplified.
  • the impact strength required for crushing depends on the crystal size and grain size distribution of the polycrystalline silicon rod, or the strain generated in the manufacturing process, so it is necessary to adjust the strength of the impact force when crushing. However, the adjustment is very easy.
  • the second impact force is applied to the polycrystalline silicon rod 10 within a period of less than 2 seconds before or after the application of the first impact force.
  • the elastic wave is generated. And it crushes into the polycrystal silicon lump which has the crushing surface which divides
  • Such a second impact force is preferably applied to the other end, which is the end opposite to the one end where the first impact force is applied to the polycrystalline silicon rod 10.
  • the second elastic wave only needs to be synthesized with the first elastic wave over the entire polycrystalline silicon rod 10. Moreover, since these two elastic waves should just be synthesize
  • the application of the first impact force and the application of the second impact force are not possible. If it is performed in less than 2 seconds, the effect of crushing by combining the first elastic wave and the second elastic wave can be sufficiently obtained.
  • the silicon rod is longer than the above, the time difference between applying the first and second impact forces is allowed to be larger. In this case, the first impact force may be applied first, or the second impact force may be applied first.
  • the first impact force is applied. It is preferable to apply a second impact force to one end (one end) of the polycrystalline silicon rod 10 on the opposite end (the other end) or in the vicinity thereof.
  • the second impact force is not limited as to the directionality as the first impact force.
  • the mechanical component in the direction perpendicular to the central axis C of the polycrystalline silicon rod 10 is used. It may have.
  • the mechanical component F ′ 2h in the direction of the central axis C of the polycrystalline silicon rod 10 having the second impact force is converted into the dynamic component F ′ in the direction perpendicular to the central axis C. It is preferable that it is larger than 2v . If the second impact force is applied from the direction of the central axis C of the polycrystalline silicon rod 10 (a direction parallel to the central axis C), crushing can be most efficiently caused.
  • Example 1 As shown in FIG. 2, the cylindrical polycrystalline silicon rod 10 is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10. 3, the first and second impact forces (F 1 and F 2 ) having a dynamic component only in the direction of the central axis C are applied from one end and the other end, respectively, and the first and second elasticity A wave was generated. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
  • a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
  • Example 2 As shown in FIG. 3, the cylindrical polycrystalline silicon rod 10 is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is half of the diameter D of the polycrystalline silicon rod 10.
  • the first and second impact forces (F 1 and F 2 ) having a dynamic component only in the direction of the central axis C are applied to the first point from one end and the other end, respectively.
  • a wave was generated.
  • the magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
  • Example 3 As shown in FIG. 5, the cylindrical polycrystalline silicon rod 10 is laid on the floor and is on a perpendicular line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10.
  • the mechanical components (F 1h and F 2h ) in the direction of the central axis C of the polycrystalline silicon rod 10 and the mechanical components (F 1v and F 2v ) in the direction perpendicular to the central axis C are synthesized.
  • First and second impact forces (F 1 and F 2 ) were applied approximately symmetrically from one end and the other end to generate first and second elastic waves, respectively. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
  • Example 4 As shown in FIG. 7, a cylindrical polycrystalline silicon rod 10 having a length in the major axis direction of about 2000 mm is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is polycrystalline.
  • a first impact force (F 1 ) having a mechanical component only in the direction of the central axis C is applied from one end to a third quarter of the diameter D of the silicon rod 10, and further, a second impact force (F 2 ) was added to the edge of the side surface in the vicinity of the other end to generate first and second elastic waves.
  • the magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
  • a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
  • Example 5 As shown in FIG. 8, the cylindrical polycrystalline silicon rod 10 was laid on the floor of the fixing jig 2, and the other end of the polycrystalline silicon rod 10 was pressed against the barrier provided on the fixing jig 2. In the state, a first component having a mechanical component only in the direction of the central axis C at a point on a perpendicular line passing through the central axis C and having a height from the floor of 3 ⁇ 4 of the diameter D of the polycrystalline silicon rod 10. An impact force (F 1 ) was applied from one end to generate a first elastic wave.
  • a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
  • Example 6 As shown in FIG. 9, the cylindrical polycrystalline silicon rod 10 is laid on the floor and is on a perpendicular line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10.
  • F 1 first impact force
  • F 2 second impact force
  • a second elastic wave was generated from the other end. The magnitudes of the first and second impact forces are the same, and the strength is such that no single crushing occurs.
  • a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
  • the present invention provides a method for crushing a polycrystalline silicon rod that is easy to operate and hardly causes contamination or foreign matter.

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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

In the present invention, an impact force (F1) (first impact force) having a dynamic component in the direction of a center axis (C) is applied to one end of a polycrystalline silicon rod (10). The impact force (striking force) (F1) generates an elastic wave (first elastic wave) within the polycrystalline silicon rod (10), and by means of this elastic wave, the rod is fractured into polycrystalline silicon lumps having a fracture surface (1) splitting the center axis (C) of the polycrystalline silicon rod (10). The polycrystalline silicon rod is an assembly of crystal grains and there are localized variations in strength within the rod, and so the impact force applied acts effectively at the portions of localized weakness in strength and it is possible to achieve fracturing across the entire length even if the polycrystalline silicon rod is long.

Description

多結晶シリコンロッドの破砕方法Crushing method of polycrystalline silicon rod
　本発明は、ＣＺ法によるシリコン単結晶成長用のルツボに仕込むためのナゲット等に用いる多結晶シリコン塊を得るための、多結晶シリコンロッドの破砕方法に関する。 The present invention relates to a method for crushing a polycrystalline silicon rod to obtain a polycrystalline silicon lump used for a nugget for charging a crucible for silicon single crystal growth by the CZ method.
　高い純度を有する多結晶シリコンは、一般に、いわゆるシーメンス法と呼ばれる手法により製造される。シーメンス法では、加熱したシリコン芯線上にＣＶＤ法によってシリコン多結晶を成長（析出）させ、多結晶シリコン棒（多結晶シリコンロッド）が得られる。このような多結晶シリコンロッドは、現在では、直径が１００ｍｍを超え、長さも２０００ｍｍを超えるものになってきている。このような多結晶シリコンロッドは、破砕されて多結晶シリコン塊（破砕状の多結晶シリコン）とされ、例えば、ＣＺ法によるシリコン単結晶成長用原料であるナゲット等として用いられる。 Polycrystalline silicon having high purity is generally produced by a so-called Siemens method. In the Siemens method, a polycrystalline silicon rod (polycrystalline silicon rod) is obtained by growing (depositing) a silicon polycrystal on a heated silicon core wire by a CVD method. Such polycrystalline silicon rods are currently over 100 mm in diameter and over 2000 mm in length. Such a polycrystalline silicon rod is crushed into a polycrystalline silicon lump (crushed polycrystalline silicon), and is used, for example, as a nugget that is a raw material for silicon single crystal growth by the CZ method.
　多結晶シリコンロッドをシリコン単結晶成長用原料等に加工する場合、ロッドが予め取り扱い易い大きさに破砕等されていれば、これを更に破砕してナゲット等の大きさにすることは比較的容易である。しかし、上述のとおり、多結晶シリコンロッドは、直径が１００ｍｍ超で長さも２０００ｍｍ超とサイズが大きく、しかも、半導体製造用原料としての品質を確保するために汚染等を防止しつつ破砕する必要があるため、実際の製造現場での破砕作業はさほど容易なものとは言えない。 When processing a polycrystalline silicon rod into a raw material for silicon single crystal growth, etc., if the rod is crushed to a size that can be easily handled in advance, it is relatively easy to further crush it into a nugget size. It is. However, as described above, the polycrystalline silicon rod has a large size of more than 100 mm in diameter and more than 2000 mm in length, and it is necessary to crush while preventing contamination in order to ensure the quality as a raw material for semiconductor manufacturing. Therefore, crushing work at an actual manufacturing site is not so easy.
　このような事情を背景として、金属等の汚染や異物混入を防ぎつつ多結晶シリコン塊を得るための破砕方法として、種々の手法が提案されてきている。例えば、特許文献１（特開平７－６１８０８号公報）には、熱ＣＶＤ法によって棒状に析出成長した多結晶シリコンを、レーザを用いて急速に加熱することにより、ロッドに熱衝撃で亀裂を入れる手法が提案されている。また、特許文献２（特開２０１１－４６５９４号公報）には、ロッドを加熱した後に局部冷却を行うことでロッドに亀裂を発生させて破砕させる方法が提案されている。さらに、特許文献３（特開平８－１０９０１３号公報）では、手動ハンマーを用いて拳程度の大きさのシリコン塊に破砕する旨が記載されている。 Against this background, various methods have been proposed as a crushing method for obtaining a polycrystalline silicon lump while preventing contamination of metals and the like and mixing of foreign substances. For example, in Patent Document 1 (Japanese Patent Application Laid-Open No. 7-61808), a rod is cracked by thermal shock by rapidly heating polycrystalline silicon deposited and grown in a rod shape by a thermal CVD method using a laser. A method has been proposed. Patent Document 2 (Japanese Patent Application Laid-Open No. 2011-46594) proposes a method in which a rod is cracked by causing local cooling after heating the rod. Further, Patent Document 3 (Japanese Patent Application Laid-Open No. Hei 8-109903) describes that a manual hammer is used to crush the silicon lump as large as a fist.
特開平７－６１８０８号公報Japanese Patent Laid-Open No. 7-61808 特開２０１１－４６５９４号公報JP 2011-46594 A 特開平８－１０９０１３号公報JP-A-8-109013
　従来提案されてきた多結晶シリコンロッドの破砕方法は何れも、汚染防止の観点や生産性の観点からは、改善の余地がある。例えば、特許文献１や２に開示されているような加熱を伴う方法では、比較的大型の装置と繁雑な操作が必要になる。特に、特許文献２に開示されているような高温加熱を伴う方法では、加熱炉からの汚染を受け易い。 Any of the conventionally proposed methods for crushing polycrystalline silicon rods has room for improvement from the viewpoint of preventing contamination and productivity. For example, a method involving heating as disclosed in Patent Documents 1 and 2 requires a relatively large apparatus and complicated operations. In particular, the method involving high-temperature heating as disclosed in Patent Document 2 is susceptible to contamination from the heating furnace.
　また、特許文献３に開示の方法のように手動ハンマーを用いて破砕する手法では、硬度の高い多結晶シリコンロッドを順次破砕していく作業負担が大きく、しかも、破砕時に不純物が付着（吸着）したり異物が混入し易く、多結晶シリコン塊の品質を落としてしまうといった問題がある。 Further, in the method of crushing using a manual hammer as in the method disclosed in Patent Document 3, the work load of sequentially crushing a polycrystalline silicon rod having high hardness is large, and impurities are attached (adsorbed) during crushing. There is a problem that the quality of the polycrystalline silicon lump is deteriorated.
　本発明は、このような従来の破砕方法の問題に鑑みてなされたもので、その目的とするところは、操作が簡単で、しかも、汚染や異物混入が生じ難い多結晶シリコンロッドの破砕方法を提供することにある。 The present invention has been made in view of the problems of such a conventional crushing method, and the object of the present invention is to provide a method for crushing a polycrystalline silicon rod that is easy to operate and hardly contaminates or contains foreign matter. It is to provide.
　上述の課題を解決するために、本発明の多結晶シリコンロッドの破砕方法は、柱状の多結晶シリコンロッドを破砕する方法であって、前記多結晶シリコンロッドの中心軸方向に力学成分を有する第１の衝撃力を前記多結晶シリコンロッドの一方端部に加えて第１の弾性波を発生させ、前記多結晶シリコンロッドの中心軸を分断する破砕面を有する多結晶シリコン塊に破砕する、ことを特徴とする。 In order to solve the above-described problem, a polycrystalline silicon rod crushing method according to the present invention is a method for crushing a columnar polycrystalline silicon rod, wherein a mechanical component is provided in the central axis direction of the polycrystalline silicon rod. Applying an impact force of 1 to one end of the polycrystalline silicon rod to generate a first elastic wave, and crushing it into a polycrystalline silicon lump having a crushing surface that divides the central axis of the polycrystalline silicon rod; It is characterized by.
　本発明の多結晶シリコンロッドの破砕方法は、更に、前記第１の衝撃力の付与前または付与後の２秒未満の時間内に前記多結晶シリコンロッドに第２の衝撃力を付与して第２の弾性波を発生させ、該第２の弾性波と前記第１の弾性波の合成弾性波により前記多結晶シリコンロッドの中心軸を分断する破砕面を有する多結晶シリコン塊に破砕する態様としてもよい。 The method for crushing a polycrystalline silicon rod according to the present invention further includes applying a second impact force to the polycrystalline silicon rod within a time of less than 2 seconds before or after applying the first impact force. As an aspect in which two elastic waves are generated and crushed into a polycrystalline silicon lump having a crushed surface that divides the central axis of the polycrystalline silicon rod by a synthetic elastic wave of the second elastic wave and the first elastic wave Also good.
　好ましくは、前記第２の衝撃力は、前記多結晶シリコンロッドに前記第１の衝撃力が加えられた前記一方端部とは逆の端部である他方端部に付与される。 Preferably, the second impact force is applied to the other end which is the opposite end to the one end where the first impact force is applied to the polycrystalline silicon rod.
　また、好ましくは、前記第１の衝撃力の付与は、前記多結晶シリコンロッドの前記一方端部とは逆の端部である他方端部を固定した状態で行われる。 Preferably, the application of the first impact force is performed in a state in which the other end which is the end opposite to the one end of the polycrystalline silicon rod is fixed.
　本発明は、操作が簡単で、しかも、汚染や異物混入が生じ難い多結晶シリコンロッドの破砕方法を提供する。 The present invention provides a method for crushing a polycrystalline silicon rod that is easy to operate and hardly contaminates or contains foreign matter.
多結晶シリコンロッドの中心軸の方向にのみ力学成分を有する衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of the crushing which provides the impact force which has a dynamic component only in the direction of the central axis of a polycrystalline silicon rod. 多結晶シリコンロッドの中心軸の方向の力学成分と、中心軸に垂直な方向の力学成分が合成された衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of the crushing which gives the impact force which synthesize | combined the dynamic component of the direction of the central axis of a polycrystalline silicon rod, and the dynamic component of the direction perpendicular | vertical to a central axis. 実施例１の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of crushing which gives the impact force of Example 1. FIG. 実施例２の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of crushing which gives the impact force of Example 2. FIG. 単結晶シリコンロッドに実施例２と同条件で衝撃を付与した際の様子を説明するための図である（比較例１）。It is a figure for demonstrating the mode at the time of giving an impact on the single crystal silicon rod on the same conditions as Example 2 (comparative example 1). 実施例３の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of crushing which gives the impact force of Example 3. FIG. 単結晶シリコンロッドに実施例３と同条件で衝撃を付与した際の様子を説明するための図である（比較例２）。It is a figure for demonstrating a mode at the time of giving an impact on the single crystal silicon rod on the same conditions as Example 3 (comparative example 2). 実施例４の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of the crushing which gives the impact force of Example 4. FIG. 実施例５の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of crushing which gives the impact force of Example 5. FIG. 実施例６の衝撃力を付与する破砕の様子を説明するための図である。It is a figure for demonstrating the mode of crushing which gives the impact force of Example 6. FIG.
　以下に、図面を参照して、本発明の多結晶シリコンロッドの破砕方法の実施形態について説明する。 Hereinafter, an embodiment of a method for crushing a polycrystalline silicon rod of the present invention will be described with reference to the drawings.
　図１Ａは、本発明の多結晶シリコンロッドの破砕方法の最も基本的な態様を図示した断面図である。図中、符号１０で示したものは柱状の多結晶シリコンロッドであり、Ｃで示した軸は多結晶シリコンロッド１０の中心軸（長軸）である。なお、通常用いられるシリコンロッドは長軸方向の長さが１５００～２５００ｍｍ程度のものが一般的である。本発明の多結晶シリコンロッドの破砕方法では、中心軸Ｃの方向に力学成分を有する衝撃力Ｆ１（第１の衝撃力）を、打撃等により、多結晶シリコンロッド１０の一方端部に加える。この衝撃力（打撃の力）Ｆ１は、多結晶シリコンロッド１０の内部に弾性波（第１の弾性波）を発生させ、この弾性波により、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を有する多結晶シリコン塊に破砕する。衝撃力を加える手法としては、手動ハンマーや衝撃粉砕機等を例示することができる。 FIG. 1A is a cross-sectional view illustrating the most basic aspect of the polycrystalline silicon rod crushing method of the present invention. In the figure, what is indicated by reference numeral 10 is a columnar polycrystalline silicon rod, and the axis indicated by C is the central axis (long axis) of the polycrystalline silicon rod 10. In general, silicon rods generally used have a length in the major axis direction of about 1500 to 2500 mm. In the polycrystalline silicon rod crushing method of the present invention, an impact force F 1 (first impact force) having a mechanical component in the direction of the central axis C is applied to one end portion of the polycrystalline silicon rod 10 by striking or the like. . This impact force (striking force) F 1 generates an elastic wave (first elastic wave) inside the polycrystalline silicon rod 10 and divides the central axis C of the polycrystalline silicon rod 10 by this elastic wave. Crushing into a polycrystalline silicon lump having a crushing surface 1. Examples of the method for applying the impact force include a manual hammer and an impact pulverizer.
　なお、第１の衝撃力の付与は、多結晶シリコンロッド１０の一方端部とは逆の端部である他方端部を固定した状態で行われることが好ましい。正確なメカニズムは明らかではないが、本発明者らは、このように多結晶シリコンロッド１０の第１の衝撃力の付与を行う端部とは逆の端部を固定すると、第１の衝撃力により生じた弾性波が固定端部で反射される際に減衰が抑えられ、強い定在波様の弾性波が形成されるものと考えている。 Note that the application of the first impact force is preferably performed in a state in which the other end, which is the end opposite to the one end of the polycrystalline silicon rod 10, is fixed. Although the exact mechanism is not clear, the present inventors have fixed the end portion of the polycrystalline silicon rod 10 opposite to the end portion to which the first impact force is applied, so that the first impact force is fixed. It is considered that when the elastic wave generated by is reflected at the fixed end, the attenuation is suppressed and a strong standing wave-like elastic wave is formed.
　多結晶シリコンロッド１０の固定は、例えば、水平に寝かせた多結晶シリコンロッド１０の他方端部を、壁や多結晶シリコンロッド１０を載置する冶具に設けられた障壁に押し当てたりすればよい。床面に多結晶シリコンロッド１０を垂直に立て、上方より衝撃力を付与する方法もあり得るが、多結晶シリコンロッド１０はその長軸が分断されるかたちで破砕されるため、安全性の面からは好ましくない。 The polycrystalline silicon rod 10 may be fixed, for example, by pressing the other end of the polycrystalline silicon rod 10 laid horizontally against a wall or a barrier provided on a jig on which the polycrystalline silicon rod 10 is placed. . There may be a method in which the polycrystalline silicon rod 10 is vertically set on the floor surface and an impact force is applied from above. However, since the polycrystalline silicon rod 10 is crushed in a manner that its long axis is divided, the safety aspect is increased. Is not preferable.
　このような破砕方法は、極めて単純なものではあるが、破砕方法として一般的なものとは言えず、例えば、単結晶シリコンの破砕方法としては不適である。多結晶シリコンロッドは結晶粒の集合であり、ロッド内部では局所的に強度のばらつきがあるため、付加された衝撃力が局所的に強度の弱い部分に有効に作用し、長尺の多結晶シリコンロッドであっても全長に渡る破砕を実現させることができる。 Although such a crushing method is extremely simple, it cannot be said to be a general crushing method, and is not suitable as a crushing method for single crystal silicon, for example. Polycrystalline silicon rods are aggregates of crystal grains, and there is local variation in strength inside the rods. Therefore, the applied impact force acts effectively on the locally weak parts, and long polycrystalline silicon. Even a rod can be crushed over its entire length.
　このような破砕の正確なメカニズムは明らかではないが、本発明者らは、一方端部から付与された衝撃力により、多結晶シリコンロッド内で、長軸方向に伝達する弾性波が発生し、この弾性波と、他方端部からの反射波が合成されて定在波様のものとなり、ロッドの中心軸Ｃに沿って、ある間隔をもったミクロな歪みが大きくなる箇所が発生することによるものであろうと推測している。 Although the exact mechanism of such crushing is not clear, the present inventors have generated an elastic wave transmitted in the long axis direction within the polycrystalline silicon rod due to the impact force applied from one end, This elastic wave and the reflected wave from the other end are combined to become a standing wave-like shape, and along the central axis C of the rod, there is a place where a micro strain with a certain interval is increased. I guess it will be.
　なお、衝撃力は、図１Ａに示したような、多結晶シリコンロッド１０の中心軸Ｃの方向にのみ力学成分を有するものである必要はない。例えば、図１Ｂに示した衝撃力Ｆ’１のように、多結晶シリコンロッド１０の中心軸Ｃの方向の力学成分Ｆ’１ｈと、中心軸Ｃに垂直な方向の力学成分Ｆ’１ｖが合成されたものであってもよい。 The impact force need not have a mechanical component only in the direction of the central axis C of the polycrystalline silicon rod 10 as shown in FIG. 1A. For example, like the impact force F ′ 1 shown in FIG. 1B, the mechanical component F ′ 1 h in the direction of the central axis C of the polycrystalline silicon rod 10 and the mechanical component F ′ 1 v in the direction perpendicular to the central axis C are synthesized. It may be what was done.
　しかし、付与した衝撃力により効率的な破砕を生じさせるためには、衝撃力の多結晶シリコンロッド１０の中心軸Ｃの方向の力学成分Ｆ’１ｈが、中心軸Ｃに垂直な方向の力学成分Ｆ’１ｖよりも大きいものであることが好ましい。図１Ａに示したように、多結晶シリコンロッド１０の中心軸Ｃの方向（と平行な方向）から衝撃力を付与すれば、最も効率的に破砕を生じさせることができる。 However, in order to cause efficient crushing by the applied impact force, the mechanical component F ′ 1h in the direction of the central axis C of the polycrystalline silicon rod 10 of the impact force is converted into the mechanical component in the direction perpendicular to the central axis C. It is preferable that it is larger than F ′ 1v . As shown in FIG. 1A, if an impact force is applied from the direction of the central axis C of the polycrystalline silicon rod 10 (a direction parallel to the center axis C), crushing can be most efficiently caused.
　このような衝撃力の付与は、手動ハンマーや衝撃粉砕機等により行うことができるが、用いる治具からの汚染や異物混入等を防ぐため、充分な強度を有するものであることが好ましい。このような治具としては、
タングステンカーバイトやチタンのような高強度材料からなる治具を例示することができる。 The application of such an impact force can be performed by a manual hammer, an impact pulverizer, or the like. However, it is preferable that the impact force is sufficiently strong in order to prevent contamination from the jig to be used, mixing of foreign matters, and the like. As such a jig,
A jig made of a high strength material such as tungsten carbide or titanium can be exemplified.
　なお、破砕に必要な衝撃の強さは、多結晶シリコンロッドの結晶粒サイズや粒径分布、或いは、製造過程で生じた歪み等に依存するため、破砕に際しては、衝撃力の強度調整が必要であるが、その調整は極めて容易である。 The impact strength required for crushing depends on the crystal size and grain size distribution of the polycrystalline silicon rod, or the strain generated in the manufacturing process, so it is necessary to adjust the strength of the impact force when crushing. However, the adjustment is very easy.
　さらに効率的に破砕を生じさせるためには、上述の第１の衝撃力の付与に加え、第２の衝撃力（更には第３以上の衝撃力）を付与することが有効である。 In order to cause crushing more efficiently, it is effective to apply a second impact force (further, a third or more impact force) in addition to the application of the first impact force described above.
　例えば、上述の第１の衝撃力の付与に加え、第１の衝撃力の付与前または付与後の２秒未満の時間内に多結晶シリコンロッド１０に第２の衝撃力を付与して第２の弾性波を発生させる。そして、この第２の弾性波と第１の弾性波の合成弾性波により多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面を有する多結晶シリコン塊に破砕する。 For example, in addition to the application of the first impact force described above, the second impact force is applied to the polycrystalline silicon rod 10 within a period of less than 2 seconds before or after the application of the first impact force. The elastic wave is generated. And it crushes into the polycrystal silicon lump which has the crushing surface which divides | segments the central axis C of the polycrystal silicon rod 10 with the synthetic | combination elastic wave of this 2nd elastic wave and 1st elastic wave.
　このような第２の衝撃力は、多結晶シリコンロッド１０に第１の衝撃力が加えられた一方端部とは逆の端部である他方端部に付与するのがよい。 Such a second impact force is preferably applied to the other end, which is the end opposite to the one end where the first impact force is applied to the polycrystalline silicon rod 10.
　第２の弾性波は、多結晶シリコンロッド１０の全体に渡って、第１の弾性波と合成されるものであればよい。また、これら２つの弾性波は、両者の何れかが減衰してしまう前に合成されればよいから、第１と第２の衝撃力の付与は、同時に行われることは必須ではない。 The second elastic wave only needs to be synthesized with the first elastic wave over the entire polycrystalline silicon rod 10. Moreover, since these two elastic waves should just be synthesize | combined before either of them attenuate | damps, it is not essential to give the 1st and 2nd impact force simultaneously.
　本発明者らの検討によれば、通常用いられるシリコンロッド（すなわち、長軸方向の長さが１５００～２５００ｍｍ程度のもの）では、第１の衝撃力の付与と第２の衝撃力の付与が２秒未満で行われれば、第１の弾性波と第２の弾性波の合成による破砕の効果を十分に得ることができる。また、シリコンロッドが上記のものよりも長尺である場合には、第１と第２の衝撃力付与の時間差はより大きなものまでが許容される。なお、この場合、第１の衝撃力の付与が先に行われても、第２の衝撃力の付与が先に行われてもよい。 According to the study by the present inventors, with a normally used silicon rod (that is, with a length in the major axis direction of about 1500 to 2500 mm), the application of the first impact force and the application of the second impact force are not possible. If it is performed in less than 2 seconds, the effect of crushing by combining the first elastic wave and the second elastic wave can be sufficiently obtained. In addition, when the silicon rod is longer than the above, the time difference between applying the first and second impact forces is allowed to be larger. In this case, the first impact force may be applied first, or the second impact force may be applied first.
　第２の弾性波を発生させる点（衝撃力付与点）に特別な制限はないが、多結晶シリコンロッド１０の全体に破砕を生じさせ易くするためには、第１の衝撃力の付与を行う多結晶シリコンロッド１０の片端部（一方端部）とは逆側の端部（他方端部）ないしはその近傍に第２の衝撃力を付与することが好ましい。 There is no particular restriction on the point at which the second elastic wave is generated (impact force application point), but in order to easily cause crushing of the entire polycrystalline silicon rod 10, the first impact force is applied. It is preferable to apply a second impact force to one end (one end) of the polycrystalline silicon rod 10 on the opposite end (the other end) or in the vicinity thereof.
　第２の衝撃波を発生させる方法としては、第１の衝撃波の発生と同様の方法が挙げられる。本発明者らの検討によれば、この第２の衝撃力は、第１の衝撃力ほど方向性に対する制限はなく、例えば、多結晶シリコンロッド１０の中心軸Ｃに垂直な方向の力学成分のみを有するものであってもよい。 As a method for generating the second shock wave, the same method as that for generating the first shock wave may be used. According to the study by the present inventors, the second impact force is not limited as to the directionality as the first impact force. For example, only the mechanical component in the direction perpendicular to the central axis C of the polycrystalline silicon rod 10 is used. It may have.
　これは、第２の衝撃力が、多結晶シリコンロッド１０の中心軸Ｃに垂直な方向の力学成分のみを有するものであっても、多結晶シリコンロッド１０の内部に発生する第２の弾性波は、多結晶シリコンロッド１０の中心軸Ｃに平行な成分を有することによるものと思われる。 This is because, even if the second impact force has only a mechanical component in the direction perpendicular to the central axis C of the polycrystalline silicon rod 10, the second elastic wave generated inside the polycrystalline silicon rod 10. This is probably due to having a component parallel to the central axis C of the polycrystalline silicon rod 10.
　しかし、効率的な破砕を生じさせるためには、第２の衝撃力の多結晶シリコンロッド１０の中心軸Ｃの方向の力学成分Ｆ’２ｈが、中心軸Ｃに垂直な方向の力学成分Ｆ’２ｖよりも大きいものであることが好ましい。多結晶シリコンロッド１０の中心軸Ｃの方向（と平行な方向）から第２の衝撃力を付与すれば、最も効率的に破砕を生じさせることができる。 However, in order to cause efficient crushing, the mechanical component F ′ 2h in the direction of the central axis C of the polycrystalline silicon rod 10 having the second impact force is converted into the dynamic component F ′ in the direction perpendicular to the central axis C. It is preferable that it is larger than 2v . If the second impact force is applied from the direction of the central axis C of the polycrystalline silicon rod 10 (a direction parallel to the central axis C), crushing can be most efficiently caused.
　なお、第１の衝撃力と第２の衝撃力の多結晶シリコンロッド１０の中心軸Ｃの方向の力学成分が等しく（Ｆ’１ｈ＝Ｆ’２ｈ）、かつ、向きが逆である場合には、多結晶シリコンロッド１０が衝撃を受けたことにより大きく動いてしまうことがない。この場合、同時に衝撃を与えることが特に好ましい。 In the case where the dynamic components in the direction of the central axis C of the polycrystalline silicon rod 10 of the first impact force and the second impact force are equal (F ′ 1h = F ′ 2h ) and the directions are opposite. The polycrystalline silicon rod 10 does not move greatly due to the impact. In this case, it is particularly preferable to apply an impact at the same time.
　［実施例１］
　図２に示したように、円柱状の多結晶シリコンロッド１０を床に寝かせ、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、中心軸Ｃ方向にのみ力学成分を有する第１および第２の衝撃力（Ｆ１およびＦ２）をそれぞれ、一方端部および他方端部から加え、第１および第２の弾性波を発生させた。なお、これら第１および第２の衝撃力の大きさは等しく、単独では破砕が生じない強度とし、付与は同時に行った。 [Example 1]
As shown in FIG. 2, the cylindrical polycrystalline silicon rod 10 is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10. 3, the first and second impact forces (F 1 and F 2 ) having a dynamic component only in the direction of the central axis C are applied from one end and the other end, respectively, and the first and second elasticity A wave was generated. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
　［実施例２］
　図３に示したように、円柱状の多結晶シリコンロッド１０を床に寝かせ、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの２分の１の点に、中心軸Ｃ方向にのみ力学成分を有する第１および第２の衝撃力（Ｆ１およびＦ２）をそれぞれ、一方端部および他方端部から加え、第１および第２の弾性波を発生させた。なお、これら第１および第２の衝撃力の大きさは等しく、単独では破砕が生じない強度とし、付与は同時に行った。 [Example 2]
As shown in FIG. 3, the cylindrical polycrystalline silicon rod 10 is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is half of the diameter D of the polycrystalline silicon rod 10. The first and second impact forces (F 1 and F 2 ) having a dynamic component only in the direction of the central axis C are applied to the first point from one end and the other end, respectively. A wave was generated. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。一方、シリコンロッドが単結晶２０である場合には、衝撃を付与した箇所のみが割れ３０、破砕は起こらなかった（図４：比較例１）。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump. On the other hand, when the silicon rod was the single crystal 20, only the portion to which the impact was applied was cracked 30 and no fracture occurred (FIG. 4: Comparative Example 1).
　［実施例３］
　図５に示したように、円柱状の多結晶シリコンロッド１０を床に寝かせ、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、多結晶シリコンロッド１０の中心軸Ｃの方向の力学成分（Ｆ１ｈおよびＦ２ｈ）と、中心軸Ｃに垂直な方向の力学成分（Ｆ１ｖおよびＦ２ｖ）が合成された第１および第２の衝撃力（Ｆ１およびＦ２）をそれぞれ、略左右対称に、一方端部および他方端部から加え、第１および第２の弾性波を発生させた。なお、これら第１および第２の衝撃力の大きさは等しく、単独では破砕が生じない強度とし、付与は同時に行った。 [Example 3]
As shown in FIG. 5, the cylindrical polycrystalline silicon rod 10 is laid on the floor and is on a perpendicular line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10. At point 3, the mechanical components (F 1h and F 2h ) in the direction of the central axis C of the polycrystalline silicon rod 10 and the mechanical components (F 1v and F 2v ) in the direction perpendicular to the central axis C are synthesized. First and second impact forces (F 1 and F 2 ) were applied approximately symmetrically from one end and the other end to generate first and second elastic waves, respectively. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。一方、シリコンロッドが単結晶２０である場合には、衝撃を付与した箇所のみが割れ３０、破砕は起こらなかった（図６：比較例２）。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump. On the other hand, when the silicon rod was the single crystal 20, only the portion to which the impact was applied was cracked 30 and no fracture occurred (FIG. 6: Comparative Example 2).
　［実施例４］
　図７に示したように、長軸方向の長さが約２０００ｍｍの円柱状の多結晶シリコンロッド１０を床に寝かせ、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、中心軸Ｃ方向にのみ力学成分を有する第１の衝撃力（Ｆ１）を一方端部から加え、さらに、第２の衝撃力（Ｆ２）を他方端部近傍の側面の稜に加え、第１および第２の弾性波を発生させた。なお、これら第１および第２の衝撃力の大きさは等しく、単独では破砕が生じない強度とし、付与は同時に行った。 [Example 4]
As shown in FIG. 7, a cylindrical polycrystalline silicon rod 10 having a length in the major axis direction of about 2000 mm is laid on the floor, and is on a vertical line passing through the central axis C, and the height from the floor is polycrystalline. A first impact force (F 1 ) having a mechanical component only in the direction of the central axis C is applied from one end to a third quarter of the diameter D of the silicon rod 10, and further, a second impact force (F 2 ) was added to the edge of the side surface in the vicinity of the other end to generate first and second elastic waves. The magnitudes of the first and second impact forces were equal, and the strength was such that no crushing occurred alone, and the application was performed simultaneously.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
　［実施例５］
　図８に示したように、円柱状の多結晶シリコンロッド１０を固定治具２の床上に寝かせ、多結晶シリコンロッド１０の他方端部を、固定治具２に設けられた障壁に押し当てた状態で、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、中心軸Ｃ方向にのみ力学成分を有する第１の衝撃力（Ｆ１）を一方端部から加え、第１の弾性波を発生させた。 [Example 5]
As shown in FIG. 8, the cylindrical polycrystalline silicon rod 10 was laid on the floor of the fixing jig 2, and the other end of the polycrystalline silicon rod 10 was pressed against the barrier provided on the fixing jig 2. In the state, a first component having a mechanical component only in the direction of the central axis C at a point on a perpendicular line passing through the central axis C and having a height from the floor of ¾ of the diameter D of the polycrystalline silicon rod 10. An impact force (F 1 ) was applied from one end to generate a first elastic wave.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
　［実施例６］
　図９に示したように、円柱状の多結晶シリコンロッド１０を床に寝かせ、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、中心軸Ｃ方向にのみ力学成分を有する第１の衝撃力（Ｆ１）を一方端部から加えて第１の弾性波を発生させた１秒後に、同じく、中心軸Ｃを通る垂線上であって、床からの高さが多結晶シリコンロッド１０の直径Ｄの４分の３の点に、中心軸Ｃ方向にのみ力学成分を有する第２の衝撃力（Ｆ２）を他方端部から加えて第２の弾性波を発生させた。なお、これら第１および第２の衝撃力の大きさは等しく、単独では破砕が生じない強度とした。 [Example 6]
As shown in FIG. 9, the cylindrical polycrystalline silicon rod 10 is laid on the floor and is on a perpendicular line passing through the central axis C, and the height from the floor is a quarter of the diameter D of the polycrystalline silicon rod 10. At 1 point, after applying a first impact force (F 1 ) having a dynamic component only in the direction of the central axis C from one end to generate the first elastic wave, the central axis C is A second impact force (F 2 ) having a mechanical component only in the direction of the central axis C is applied to a point that is on the perpendicular line and the height from the floor is ¾ of the diameter D of the polycrystalline silicon rod 10. A second elastic wave was generated from the other end. The magnitudes of the first and second impact forces are the same, and the strength is such that no single crushing occurs.
　その結果、多結晶シリコンロッド１０の中心軸Ｃを分断する破砕面１を内部に生じさせることができ、多結晶シリコン塊に破砕することができた。 As a result, a crushing surface 1 that divides the central axis C of the polycrystalline silicon rod 10 can be generated inside, and can be crushed into a polycrystalline silicon lump.
　なお、第１の衝撃力（Ｆ１）を付加した後に第２の衝撃力（Ｆ２）を付加するまでの時間を２秒とした場合には、破砕は生じたものの、部分的に大きすぎるシリコン塊が残った（比較例３）。また、上記第２の衝撃力を付加するまでの時間を３秒（比較例４）、４秒（比較例５）、５秒（比較例６）とした場合には、何れも、破砕は生じなかった。 In addition, when the time until the second impact force (F 2 ) is applied after the first impact force (F 1 ) is applied is 2 seconds, although crushing occurs, it is partially too large. A silicon mass remained (Comparative Example 3). In addition, when the time until the second impact force is applied is 3 seconds (Comparative Example 4), 4 seconds (Comparative Example 5), and 5 seconds (Comparative Example 6), crushing occurs. There wasn't.
　以上、説明したとおり、本発明は、操作が簡単で、しかも、汚染や異物混入が生じ難い多結晶シリコンロッドの破砕方法を提供する。 As described above, the present invention provides a method for crushing a polycrystalline silicon rod that is easy to operate and hardly causes contamination or foreign matter.
　１　破砕面
　２　固定治具
　１０　多結晶シリコンロッド
　２０　単結晶シリコンロッド
　３０　割れ 1 Crushing surface 2 Fixing jig 10 Polycrystalline silicon rod 20 Single crystal silicon rod 30 Cracking

Claims (4)

  1. 　柱状の多結晶シリコンロッドを破砕する方法であって、
    　前記多結晶シリコンロッドの中心軸方向に力学成分を有する第１の衝撃力を前記多結晶シリコンロッドの一方端部に加えて第１の弾性波を発生させ、前記多結晶シリコンロッドの中心軸を分断する破砕面を有する多結晶シリコン塊に破砕する、ことを特徴とする多結晶シリコンロッドの破砕方法。     A method of crushing a columnar polycrystalline silicon rod,
    A first impact wave having a dynamic component in the direction of the central axis of the polycrystalline silicon rod is applied to one end of the polycrystalline silicon rod to generate a first elastic wave, and the central axis of the polycrystalline silicon rod is A method for crushing a polycrystalline silicon rod, comprising crushing into a polycrystalline silicon lump having a crushing surface to be divided.
  2. 　更に、前記第１の衝撃力の付与前または付与後の２秒未満の時間内に前記多結晶シリコンロッドに第２の衝撃力を付与して第２の弾性波を発生させ、該第２の弾性波と前記第１の弾性波の合成弾性波により前記多結晶シリコンロッドの中心軸を分断する破砕面を有する多結晶シリコン塊に破砕する、請求項１に記載の多結晶シリコンロッドの破砕方法。 Further, a second elastic force is generated by applying a second impact force to the polycrystalline silicon rod within a time of less than 2 seconds before or after the application of the first impact force, 2. The method for crushing a polycrystalline silicon rod according to claim 1, wherein the crushing is performed into a polycrystalline silicon lump having a crushing surface that divides a central axis of the polycrystalline silicon rod by a synthetic elastic wave of the elastic wave and the first elastic wave. .
  3. 　前記第２の衝撃力は、前記多結晶シリコンロッドに前記第１の衝撃力が加えられた前記一方端部とは逆の端部である他方端部に付与される、請求項２に記載の多結晶シリコンロッドの破砕方法。 3. The second impact force according to claim 2, wherein the second impact force is applied to the other end portion that is an end portion opposite to the one end portion where the first impact force is applied to the polycrystalline silicon rod. A method for crushing polycrystalline silicon rods.
  4. 　前記第１の衝撃力の付与は、前記多結晶シリコンロッドの前記一方端部とは逆の端部である他方端部を固定した状態で行われる、請求項１に記載の多結晶シリコンロッドの破砕方法。 2. The polycrystalline silicon rod according to claim 1, wherein the application of the first impact force is performed in a state in which the other end which is an end opposite to the one end of the polycrystalline silicon rod is fixed. Crushing method.
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