WO2013010509A1 - Cible d'arc à gouttelette réduite et système de revêtement au plasma doté de ladite cible - Google Patents

Cible d'arc à gouttelette réduite et système de revêtement au plasma doté de ladite cible Download PDF

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Publication number
WO2013010509A1
WO2013010509A1 PCT/CN2012/078986 CN2012078986W WO2013010509A1 WO 2013010509 A1 WO2013010509 A1 WO 2013010509A1 CN 2012078986 W CN2012078986 W CN 2012078986W WO 2013010509 A1 WO2013010509 A1 WO 2013010509A1
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WO
WIPO (PCT)
Prior art keywords
target
arc
vacuum chamber
water
cooling
Prior art date
Application number
PCT/CN2012/078986
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English (en)
Chinese (zh)
Inventor
董小虹
张中弦
梁航
黄拿灿
哥罗沃依•亚历山大
Original Assignee
广东世创金属科技有限公司
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Application filed by 广东世创金属科技有限公司 filed Critical 广东世创金属科技有限公司
Publication of WO2013010509A1 publication Critical patent/WO2013010509A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • Plasma spraying system with less droplet arc target and arc droplet target with less droplets
  • the present invention relates to a low droplet arc target and a plasma coating system with a low droplet arc target. It belongs to the field of vacuum arc ion plating technology.
  • Arc ion plating technology because of the simple structure of the device, the cathode target is both the evaporation source of the cathode material and the ion source; the ionization rate is high (generally up to 60% ⁇ 80%), the deposition rate is high; the incident ion energy is large, With high film/base bonding strength and good coating quality, it has a wide application range and strong practicability.
  • As a hard film coating method it has been widely used in tools and various tooling.
  • arc ion plating system there are large particles (micropart icles) contamination in the coating, which makes the surface of the coating rough, the porosity increases, and the coating performance is unstable, which restricts to some extent.
  • Ion plating technology when depositing, when the surface of the cathode target is ignited by an external circuit to generate an arc, the temperature of the ignition target of the cathode target is increased, a large amount of electrons are emitted into the space, and a certain proportion of the metal atoms of the target are evaporated.
  • the inelastic collision of the hot electrons with these metal atoms ionizes them into positive ions, and the positive ions accumulate in front of the arc spots to form an ion cloud, because the ion cloud is close to the surface of the cathode (about 10 microns), and the ion cloud is at the cathode.
  • the potential is high and a strong electric field is formed on the surface of the cathode.
  • This electric field has a strong drag effect on electrons inside the metal surface, producing strong field electron emission, generating a stable high current density, high energy density electron flow.
  • the high energy density electron flow causes the cathode arc spot to locally heat up rapidly and form a micro-melting pool, which generates a large amount of metal material entrapped in the droplets.
  • the metal vapor stream is in front of the cathode and is inelastically collided by the high-speed electron flow, and the metal vapor is ionized again. It is a high-energy positive ion, which in turn enhances the field emission effect.
  • Such a thermal field emission mechanism is repeated to maintain the arc target discharge, and a high ionization rate, high energy cathode target material plasma stream is emitted at the cathode target.
  • the field emission electron flow is first broken at a portion where the cathode surface is protruded or where the work function is low, and an arc spot is formed.
  • a burn pit is formed in the arc spot due to vaporization of the cathode material, so that the conditional change of the field-emitting electrons disappears, and a second field emission arc is formed at another position.
  • the arc spot is not fixed and it migrates rapidly on the surface of the cathode. The morphology of ion-coated particles has been carefully observed by many researchers.
  • the particles are molten materials of the cathode target, formed by droplets ejected from the micro-melting pool of the cathode arc spot, are spherical in space, and become flat when solidified on the surface of the substrate, and are often goose-like or spherical particles. They vary in size from a few micrometers to a few dozen micrometers, and individual tens of micrometers. Since the particles are produced by the melting of the cathode target, it is necessarily related to the temperature of the melting, and the higher the melting temperature, the larger the particles produced.
  • the arc spot after the arcing of the conventional cathode target generally exhibits an irregular free motion, and the moving speed is slow, which causes the arc spot to stay at a certain point on the surface of the cathode target for a long time, and the target surface is melted at that point.
  • the temperature is higher, so the more the particles are.
  • the arc evaporation source in the prior art has the disadvantages of large metal particles, poor quality of deposited film layers, low utilization of targets, complicated structure, troublesome installation adjustment, and poor cooling effect. Summary of the invention
  • the first object of the present invention is to solve the problem that the vacuum arc ion plating apparatus in the prior art has large metal particles obtained by evaporation, poor quality of the deposited film layer, low utilization rate of the target material, complicated structure, and troublesome installation adjustment.
  • the disadvantage of poor cooling effect is to provide a low-drop arc target, which can significantly reduce the generation of large droplets of arc ion plating, and uniformly ablate the surface of the cathode target, thereby effectively improving the utilization efficiency of the target.
  • a second object of the present invention is to provide a plasma coating system with a small droplet arc target, which has the advantages of simple and reasonable structure, convenient installation and adjustment, and good cooling effect.
  • a droplet-free arc target characterized by: comprising a cathode target, a water-cooled seat on a back surface of the cathode target, and a cooling water pipe extending from a water inlet of the water-cooling seat, in a cavity of the water-cooled seat or a surface of the cooling water pipe a permanent magnet electromagnetic element is arranged, a large electromagnetic coil is arranged on the back side of the permanent magnet electromagnetic element, a programmable DC power supply is connected to the large electromagnetic coil; an arc current source is connected to the cooling water pipe; and the large electromagnetic coil is sleeved on the cooling water pipe;
  • the polarity of the magnetic field generated by the large electromagnetic coil is opposite to the polarity of the permanent magnet electromagnetic element, and a superimposed magnetic field generated by both the permanent magnet electromagnetic element and the large electromagnetic coil is formed on the surface of the cathode target, the superimposed magnetic field strength accompanying the large electromagnetic coil
  • the radius of motion of the cathodic arc spot of the catho
  • a first object of the present invention can also be attained by the following technical solution:
  • a technical improvement to achieve the first object of the present invention is: forming a superposition of both the permanent magnet electromagnetic element and the large electromagnetic coil on the surface of the cathode target
  • the permanent magnet electromagnetic element is composed of a permanent magnet or a small electromagnetic coil.
  • a plasma coating system with a small droplet arc target which is characterized by:
  • the cathode target and the water-cooled seat of the small-drop arc target are located in the inner cavity of the vacuum chamber, the large electromagnetic coil of the droplet-off-arc target, the programmable DC power source, the arc current source and the water from the water-cooled seat
  • the cooling water pipe extending from the mouth is located outside the vacuum chamber, and the permanent magnet electromagnetic component of the small droplet arc target is located in the inner cavity or the outer side of the vacuum chamber; the permanent magnet electromagnetic component is composed of a permanent magnet or a small electromagnetic coil;
  • the working turntable is disposed in the inner cavity of the vacuum chamber, and the power input end of the working turntable is connected to the output end of the bias power source; the air extracting port of the vacuum pumping group is connected to the inner cavity of the vacuum chamber, and the process gas is connected to the air inlet of the vacuum chamber.
  • a second object of the present invention can also be achieved by adopting the following technical solution:
  • a technical improvement to achieve the second object of the present invention is: the water-cooled seat includes a target seat water jacket, and is connected to the inner cavity of the target seat water jacket Cooling water pipe; the target water jacket is installed in the vacuum chamber, the cooling water pipe extends outward through the side wall of the vacuum chamber, and communicates with the external cooling water, the cooling water pipe is connected with the arc current source; the cathode target is fixed at the target seat The right end of the water jacket is open; the permanent magnet is installed in the inner cavity of the water jacket of the target seat in the vacuum chamber; or the permanent magnet or the small electromagnetic coil is installed on the cooling water pipe located outside the vacuum chamber.
  • a technical improvement to achieve the second object of the present invention is: the inner cavity of the target seat water jacket is divided into a front water cooling chamber and a rear water cooling chamber that communicate with each other; the target seat water jacket passes through the target mounting flange and the vacuum chamber side
  • the interface flange on the wall is sealed and fixedly connected;
  • the cooling water pipe is composed of an inlet pipe and an outlet pipe; one end of the inlet pipe is connected with the front water cooling cavity, and the other end is connected to the external cooling water pipe through the side wall of the vacuum chamber, and one end of the outlet pipe It is connected to the rear water cooling chamber, and the other end is connected to the external cooling water pipe through the side wall of the vacuum chamber.
  • a technical improvement to achieve the second object of the present invention is to provide a terminal for connection to an arc current source on the inlet or outlet pipe.
  • a technical improvement to achieve the second object of the present invention is: a shielding cover is provided on the side of the target water jacket on the cathode target.
  • a technical improvement to achieve the second object of the present invention is:
  • the magnet is mounted in the front cold water chamber of the target seat water jacket by means of a adjusting screw.
  • the small droplet arc target according to the present invention can accelerate the movement speed of the arc spot by installing a group of magnets or small electromagnetic coils behind the cathode target, and significantly reduce the generation of large droplets of arc ion plating; Behind the electromagnetic coil, a large electromagnetic coil is installed, and a special cyclically varying direct current is added to the electromagnetic coil through a programmable direct current power source. The polarity of the magnetic field generated is opposite to the polarity of the magnet, and the current can be changed by the coil cycle.
  • the radius of the arched magnetic field generated by the magnet changes periodically, so that the moving speed of the arc spot on the surface of the cathode target is accelerated, the generation of large droplets of arc ion plating is significantly reduced, and the surface of the cathode target is uniformly ablated, making full use of Target.
  • the target water jacket of the present invention comprises a front water cooling chamber and a rear water cooling chamber, and the inlet pipe and the outlet pipe of the target water jacket are connected to the external cooling water pipe through the side wall of the vacuum chamber; Mounted on the inlet pipe outside the vacuum chamber, the magnet or small electromagnetic coil can be installed in the rear water cooling chamber of the target seat water jacket located in the vacuum chamber as needed, or installed on the cooling water pipe located outside the vacuum chamber. Therefore, the invention has the advantages of simple and reasonable structure, convenient installation and adjustment, and good cooling effect.
  • the axial position of the magnet can be adjusted by adjusting the screw so that the radius of motion of the cathode arc spot is in an appropriate range. With the cathode target of the present invention, the surface thereof can be uniformly ablated, and the utilization rate is high.
  • FIG. 1 is a schematic view showing the structure of a plasma coating system with a small droplet arc target according to a first embodiment of the present invention.
  • Fig. 2 is a schematic view showing the structure of a small droplet arc target according to a first embodiment of the present invention.
  • Fig. 3 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a second embodiment of the present invention.
  • Fig. 4 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a third embodiment of the present invention.
  • Fig. 5 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a fourth embodiment of the present invention.
  • the cathode target 6 of the small droplet arc target and the water-cooling seat 5 are located in the inner cavity of the vacuum chamber 1, the large electromagnetic coil 10 of the droplet arc target, the programmable DC power source 1 1, the arc current source 12 and the water-cooling seat
  • the cooling water pipe extending from the water inlet of the 5 is located outside the vacuum chamber, and the electromagnetic component of the small droplet arc target is located in the inner cavity or the outer side of the vacuum chamber 1;
  • the working turntable 4 is disposed in the inner cavity of the vacuum chamber 1, and the power input end of the working turntable 4 is connected to the output end of the bias power supply 1 1; the exhaust opening of the vacuum pump set 2 is connected to the inner cavity of the vacuum chamber 1, and the process gas 15 is connected to the vacuum.
  • a small droplet arc target includes a cathode target 6, a water cooling seat 5 is disposed on the back surface of the cathode target 6, and a cooling water pipe is extended from the water inlet of the water cooling seat 5,
  • the inner surface of the water cooling seat 5 or the surface of the cooling water pipe is provided with an electromagnetic element, and a large electromagnetic coil 10 is disposed on the back surface of the electromagnetic element, and the large electromagnetic coil 10 is connected with a programmable DC power source 1 1; the cooling water pipe is connected with an arc current source 1 2 ;
  • Large electromagnetic coil 10 is sleeved in cold However, the polarity of the magnetic field generated by the large electromagnetic coil 10 and the polarity of the electromagnetic element must be opposite, and a superimposed magnetic field generated by both the electromagnetic element and the large electromagnetic coil is formed on the surface of the cathode target 6, and the magnetic field strength is accompanied by a large electromagnetic field.
  • the current of the coil 10 changes with a periodic change, and the radius of motion of the
  • a superimposed magnetic field generated by both the electromagnetic element and the large electromagnetic coil 10 is formed on the surface of the cathode target 6, and the superimposed magnetic field is an arc-shaped bending magnetic field B, which is composed of a parallel magnetic field B1 and a vertical magnetic field B2 with respect to the cathode target surface.
  • the electromagnetic element is composed of a permanent magnet 8.
  • the water cooling seat 5 includes a target water jacket 5-1, a cooling water pipe 5-2 communicating with the inner cavity of the target water jacket 5-1, and a target water jacket 5-1 installed in the vacuum chamber 1, the cooling water pipe 5 -2 extends outward through the side wall of the vacuum chamber 1 and communicates with an external cooling water port, the cooling water pipe 5-2 is connected to the arc current source 12; the cathode target 6 is fixed to the right end opening of the target water jacket 5-1 The magnet 8 is mounted in the inner cavity of the target holder water jacket 5-1 located in the vacuum chamber 1.
  • the inner cavity of the target water jacket 5-1 is divided into a front water cooling chamber 5-1-1 and a rear water cooling chamber 5-1-2 which are in communication with each other; the target water jacket 5-1 passes through the target mounting flange 5-3 Sealed and fixedly connected to the interface flange on the side wall of the vacuum chamber 1; the cooling water pipe 5-2 is composed of the inlet pipe 5-2-1 and the outlet pipe 5-2-2; one end of the inlet pipe 5-2-1 is cooled with the front water
  • the cavity 5-1-1 is connected, and the other end thereof is connected to the external cooling water pipe through the side wall of the vacuum chamber 1.
  • the one end of the outlet pipe 5-2-2 is connected to the rear water cooling chamber 5-1-2, and the other end thereof passes through.
  • the side wall of the vacuum chamber 1 is connected to an external cooling water pipe.
  • a terminal 13 connected to the arc current source 12 is provided on the outlet pipe 5-2-2.
  • a shield cover 5-4 is provided on the side of the target water jacket 5-1 on the cathode target 6. It is possible to limit the movement of the arc spot on the surface of the cathode target to the side.
  • the magnet 8 is mounted in the rear cold water chamber 5-1-2 of the target holder water jacket 5-1 by an adjusting screw 5-5.
  • the axial position of the magnet can be adjusted by adjusting the screw so that the radius of motion of the cathode arc spot is in an appropriate range.
  • the cooling water directly reaches the front water cooling chamber from the inlet pipe to cool the back surface of the cathode target, and then enters the rear water cooling chamber to cool the magnet, and then discharges through the outlet pipe.
  • the arc power is connected to the arc power terminal, and the arc current passes.
  • the outlet pipe, the rear water-cooling chamber casing, and the front water-cooling chamber are transferred to the cathode target, and the arc spot is ignited by the arcing electrode on the side of the cathode target.
  • the present invention installs a special array of magnets behind the cathode target, and an arc-shaped bending magnetic field B is generated on the surface of the cathode target by the magnet, and the arc-shaped bending magnetic field is opposite to Parallel magnetic field B1 and perpendicular magnetic field of the cathode target surface
  • the axial position of the magnet can be adjusted to make the radius of motion of the cathode arc spot in an appropriate range.
  • the radius of motion of the cathodic arc spot Under the action of the horizontal magnetic field B1, the radius of motion of the cathodic arc spot can only be fixed, so that the ablation of the cathode target will be uneven, which affects the utilization of the cathode target.
  • the invention is provided with an electromagnetic coil behind the magnet, and a special cyclically varying DC current is added to the electromagnetic coil through the programmable DC power source, and the polarity of the magnetic field generated and the polarity of the magnet must be On the contrary, the magnetic field on the surface of the cathode target will be superimposed by the magnetic field generated by both the magnet and the electromagnetic coil. The strength of the magnetic field will also change with the current cycle of the electromagnetic coil, and the radius of motion of the cathodic arc spot will also change periodically. . Therefore, with the cathode target of the present invention, the surface thereof can be uniformly ablated, and the utilization rate is high.
  • the electromagnetic element is composed of a permanent magnet 8.
  • the permanent magnet 8 is mounted on an inlet pipe 5-2-1 located outside the vacuum chamber 1. Others are the same as in the specific embodiment 1.
  • the electromagnetic element is composed of a small electromagnetic coil 9 which is mounted in the rear cold water chamber 5-1-2 of the target holder water jacket 5-1 located in the vacuum chamber 1. Others are the same as in the specific embodiment 1.
  • the electromagnetic element is constituted by a small electromagnetic coil 9, and the small electromagnetic coil 9 is mounted on an inlet pipe 5-2-1 located outside the vacuum chamber 1. Others are the same as in the specific embodiment 1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne une cible d'arc à gouttelette réduite et un système de revêtement au plasma doté de ladite cible. Le système comprend une cible d'arc à gouttelette réduite, une chambre à vide, un ensemble pompe à vide, une plaque tournante de travail, un gaz industriel et une source de courant de polarisation. La cible cathodique de la cible d'arc à gouttelette réduite et un siège de refroidissement à eau sont disposés à l'intérieur de la cavité interne de la chambre à vide. Une grande bobine électromagnétique de la cible d'arc à gouttelette réduite, une source de courant continu programmable, une source de courant d'arc et un tuyau d'eau de refroidissement s'étendant à partir de l'entrée d'eau du siège de refroidissement à eau sont situés à l'extérieur de la chambre à vide, et un élément électromagnétique de la cible d'arc à gouttelette réduite est disposé à l'intérieur de la cavité interne de la chambre à vide ou à l'extérieur de la chambre. La présente invention permet de modifier le rayon du champ magnétique de l'arc produit par l'aimant au moyen d'un changement de courant de bobine périodique et présente un changement périodique, ce qui permet d'augmenter la vitesse de déplacement des points d'arc sur la surface de la cible cathodique, de diminuer considérablement la production de grandes gouttelettes revêtues par des ions d'arc, et de garantir que la surface de la cible cathodique soit gravée régulièrement et d'utiliser entièrement le matériau cible. En outre, l'invention présente les avantages d'une structure simple et rationnelle, d'une installation et d'un réglage pratiques, et de bons effets de refroidissement.
PCT/CN2012/078986 2011-07-21 2012-07-21 Cible d'arc à gouttelette réduite et système de revêtement au plasma doté de ladite cible WO2013010509A1 (fr)

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Application Number Priority Date Filing Date Title
CN201110204087.0 2011-07-21
CN2011102040870A CN102260850A (zh) 2011-07-21 2011-07-21 一种少液滴电弧靶及带少液滴电弧靶的等离子涂层系统

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CN108774728A (zh) * 2018-08-06 2018-11-09 法德(浙江)机械科技有限公司 一种离子源多弧柱弧复合pvd镀膜系统及镀膜方法

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CN102260850A (zh) * 2011-07-21 2011-11-30 广东世创金属科技有限公司 一种少液滴电弧靶及带少液滴电弧靶的等离子涂层系统
CN103132020B (zh) * 2013-03-17 2018-04-20 广东世创金属科技股份有限公司 一种改进结构的电弧靶及其控制系统
CN104294227B (zh) * 2014-08-27 2017-03-15 星弧涂层新材料科技（苏州）股份有限公司 动态磁场阴极电弧源
CN107805786B (zh) * 2017-12-07 2023-12-08 北京泰科诺科技有限公司 多弧离子真空镀膜机
CN110295351B (zh) * 2019-05-27 2024-02-27 东莞市汇成真空科技有限公司 一种通过翻转式靶门隔离靶体的镀膜机
CN114086127B (zh) * 2021-11-29 2023-10-27 青岛科技大学 一种磁场辅助阴极电弧离子镀蒸发源

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Publication number Priority date Publication date Assignee Title
CN108774728A (zh) * 2018-08-06 2018-11-09 法德(浙江)机械科技有限公司 一种离子源多弧柱弧复合pvd镀膜系统及镀膜方法
CN108774728B (zh) * 2018-08-06 2023-04-11 法德(浙江)机械科技有限公司 一种离子源多弧柱弧复合pvd镀膜系统及镀膜方法

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