WO2012171227A1 - 自激式同步整流升压变换器 - Google Patents
自激式同步整流升压变换器 Download PDFInfo
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- WO2012171227A1 WO2012171227A1 PCT/CN2011/075919 CN2011075919W WO2012171227A1 WO 2012171227 A1 WO2012171227 A1 WO 2012171227A1 CN 2011075919 W CN2011075919 W CN 2011075919W WO 2012171227 A1 WO2012171227 A1 WO 2012171227A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the utility model relates to a boost converter, in particular to a self-excited synchronous rectification boost converter.
- the first winding L1 including the input power source Vin and the input power source Vin is connected to the first winding L1 and the output.
- the boosting circuit is repeatedly turned on and off by the switching transistor Q1, so that the first winding L1 can output a forward voltage, and the output capacitor is charged together with the input power source Vin, so that the output capacitor can be supplied higher than the input power source Vin.
- the output voltage Vo is given to the backlight module at the load end.
- the booster circuit realizes that the output voltage is higher than the input voltage and functions as a booster.
- the boosting circuit is rectified by the diode D1
- the power consumption of the diode rectification will become large, resulting in a decrease in the efficiency of the boosting circuit and difficulty in heat dissipation.
- the booster circuit is rectified by a metal oxide semiconductor transistor (MOSFET), it needs to be driven by an isolated floating ground, which will cause the driving circuit to be complicated.
- MOSFET metal oxide semiconductor transistor
- the utility model provides a self-excited synchronous rectification boost converter, which improves the problem of excessive power consumption in the conventional diode rectification method.
- the main purpose of the utility model is to provide a self-excited synchronous rectification boost converter, which increases the auxiliary winding and the peripheral circuit to realize self-excited synchronous rectification, and replaces the diode rectification with a low-on-resistance power transistor MOSFET. Reduce the power consumption of the rectification part, improve the performance of the converter, and achieve high efficiency of the power supply.
- the present invention provides a self-excited synchronous rectification boost converter, the self-excited synchronous rectification boost converter comprising:
- the first switch receives a pulse drive signal and is repeatedly turned on and off;
- a first winding connected between an input voltage source and the first switch, and storing energy when the first switch is turned on, and discharging when the first switch is turned off;
- a switching circuit that connects the auxiliary winding and outputs a control signal according to a change in voltage across the auxiliary winding
- a second switch connected to the switch circuit to receive its control signal and turned on or off according to the control signal.
- the first switch and the second switch are both N-channel MOS transistors.
- the switch circuit includes a diode and a third switch, an anode of the diode is an end connected to the auxiliary winding; and the third switch is a cathode and a device connected to the diode Between the second switches; when the voltage across the auxiliary winding is a forward voltage, the diode is in an on state, the third switch is in an off state, and the second switch is in a conducting state; When the voltage across the auxiliary winding is a reverse voltage, the diode is in an off state, the third switch is in an on state, and the second switch is in an off state.
- the third switch is a transistor, wherein an emitter of the third switch is connected to a cathode of the diode through a resistor, and is connected to the second switch through another resistor. a gate; a base of the third switch is connected between the anode of the diode and the auxiliary winding through a resistor; a collector of the third switch is connected to the other end of the auxiliary winding Between the sources of the second switch.
- the first switch when the pulse driving signal received by the first switch is at a high level, the first switch is in an on state, the first winding is in an energy storage state, and the auxiliary winding The voltage at both ends is a forward voltage.
- the pulse driving signal received by the first switch is at a low level, the first switch is in an off state, and the voltage across the first winding is a reverse voltage, the auxiliary The voltage across the winding is a reverse voltage.
- the same name end of the first winding is connected to the input voltage source, and the non-named end is connected to the drain of the first switch; the same name end of the auxiliary winding is connected to the same
- the source of the first switch and the collector of the third switch have a non-identical end connected to the base of the third switch.
- the utility model mainly utilizes an auxiliary winding and a switch circuit to control the action of the rectification switch, realizes self-driven synchronous rectification, and replaces the traditional diode rectification mode, thereby improving efficiency and reducing power consumption.
- FIG. 1 is a circuit diagram of a booster circuit of a conventional backlight module for driving a liquid crystal display.
- FIG. 2 is a circuit diagram of a preferred embodiment of the self-excited synchronous rectification boost converter of the present invention.
- FIG. 3 is a diagram showing voltage and current waveforms of a preferred embodiment of the self-excited synchronous rectification boost converter of the present invention.
- FIG. 2 is a circuit diagram of a preferred embodiment of the self-excited synchronous rectification boost converter of the present invention.
- the self-excited synchronous rectification boost converter mainly includes a first switch 100, a first winding 110, an auxiliary winding 111, a switching circuit 120, and a second switch 101.
- the first switch is an N-channel MOS transistor in this embodiment.
- the first winding 110 is connected between an input voltage source V1 and the first switch 100, wherein the same name terminal is connected to the input voltage source V1, and the non-identical end is connected to the drain of the first switch 100. .
- the first winding 110 stores energy when the first switch 100 is turned on, and at this time, the voltage of the same name terminal is higher than the voltage of the non-identical terminal.
- a reverse voltage is induced across the first winding 110, and the voltage of the non-named terminal is higher than the voltage of the same name.
- the terminal voltage of the drain is V1/(1-D)
- the auxiliary winding 111 is connected to the first winding 110 and the first switch 100, wherein the same end of the auxiliary winding 111 is connected to the drain of the first switch 100 and the non-identical end of the first winding 110 .
- the turns ratio of the auxiliary winding 111 to the first winding 110 is N:1.
- the voltage of the same name of the auxiliary winding 111 is higher than the voltage of the non-identical terminal; when the first winding 110 induces a reverse voltage V1D/(1-D), the auxiliary The non-identical terminal voltage of the winding 111 is higher than the voltage of the same name terminal, and the voltage at both ends is N* V1D/(1-D).
- the switch circuit 120 is connected to the auxiliary winding 111 and outputs a control signal according to a change in voltage across the auxiliary winding 111.
- the switch circuit 120 includes a diode 104 and a third switch 103.
- the anode of the diode 104 is connected to the non-identical end of the auxiliary winding 111.
- the third switch 103 is a cathode that connects the diodes 104. In this embodiment, when the voltage across the auxiliary winding 111 is a forward voltage, the diode 104 is in an on state, and the third switch 103 is in an off state; the voltage across the auxiliary winding 111 is reversed.
- the third switch 103 is preferably a transistor, the emitter of which is connected to the cathode of the diode 104 through a resistor; the base thereof is connected to the anode of the diode 104 and the non-identical end of the auxiliary winding 111 through a resistor.
- the collector is connected to the same name end of the auxiliary winding 111.
- the second switch 101 is connected to the switch circuit 120 to receive its control signal, and is turned on or off according to the control signal, wherein when the third switch 103 is in an off state, the second switch 101 is in an on state; when the third switch 103 is in an on state, the second switch 101 is in an off state.
- the second switch 101 is an N-channel MOS transistor whose gate is connected to the emitter of the third switch 103 through a resistor; the source thereof is connected to the set of the third switch 103. The drain is connected to an output capacitor 105.
- the first switch 100 When the pulse driving signal Vg1 is at a high level, the first switch 100 is in an on state, and the first winding 110 is in an energy storage state, as shown in FIG. 3, the current IL linearly increases with a slope V1/L. (L is the inductance value of the first winding 110), at this time, the voltage across the auxiliary winding 111 is a forward voltage, at which time the diode 104 is in an off state, and the third switch 103 is in an on state, due to the second switch 101 The gate is connected to the source of the third switch 103, so the second switch 101 is in an off state.
- the first switch 100 When the pulse driving signal Vg1 is at a low level, the first switch 100 is in an off state, and the voltage across the first winding 110 is a reverse voltage, and the voltage across the auxiliary winding 111 is reversed. At this time, the diode 104 is in an on state, and the third switch is in an off state, and the gate voltage of the second switch 101 is turned on higher than the source voltage, thereby achieving synchronous rectification. As can be seen from FIG. 3, the waveform of the signal Vg2 for driving the second switch 101 is opposite to the phase of the waveform of the pulse driving signal.
- the present invention utilizes the auxiliary winding 111 to synchronously sense the current change of the first winding 110 of the front end, and controls the conduction of the second switch 101 by the combination of the forward and reverse voltages, and the diode 104 and the third switch 103. And turn off, and then achieve self-excited synchronous rectification.
- the utility model replaces the conventional diode rectification with a second switch which is a metal-oxide-semiconductor transistor, which can improve efficiency, reduce power consumption, and utilize
- the self-excited synchronous rectification method does not require floating isolation means, and the cost is low.
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Abstract
一种自激式同步整流升压变换器,其包含一个接受脉冲驱动信号(DRV)的第一开关(100)、第一绕组(110)以及一个由辅助绕组(111)与第二开关(101)构成的同步整流电路。第一绕组(110)在第一开关(100)导通时储能、关断时放能而达到升压。辅助绕组(111)通过其从第一绕组(110)的所感应的电压配合开关电路(120)来控制第二开关(101)导通与关断,实现同步整流。在大电流输出情况下,该升压变换器可以大幅度降低整流的功耗,提高效率。
Description
本实用新型涉及一种升压变换器,特别是有关于一种自激式同步整流升压变换器。
请参考图1所示,目前用来驱动液晶显示器的背光模块的升压(BOOST)电路中,主要是包含输入电源Vin、连接输入电源Vin的第一绕组L1、连接于第一绕组L1与输出电容之间的二极管D1,以及连接于第一绕组L1与二极管D1之间的开关管Q1。
所述的升压电路利用开关管Q1反复的导通与关断,使第一绕组L1可输出正向电压,而与输入电源Vin共同对输出电容充电,使输出电容可供应高于输入电源Vin的输出电压Vo给负载端的背光模块。
前述升压电路实现了输出电压比输入电压高,起到升压的作用。然而,由于此升压电路采用二极管D1整流,当输出大电流时,二极管整流的功耗将会变得很大,导致升压电路的效率下降,且具有散热困难之虞。而若所述升压电路采用金属氧化物半导体晶体管(MOSFET)整流,则需要使用隔离浮地的方式驱动,将会导致其驱动电路复杂。
故,有必要提供一种自激式同步整流升压变换器,以解决现有技术所存在的问题。
本实用新型提供一种自激式同步整流升压变换器,以改进传统使用二极管整流方式功耗过大的问题。
本实用新型的主要目的在于提供一种自激式同步整流升压变换器,其增加辅助绕组和外围电路实现自激式同步整流,用低导通电阻的功率晶体管MOSFET代替二极体整流,可以降低整流部分的功耗,提高变换器的性能,实现电源的高效率。
为达成本实用新型的前述目的,本实用新型提供一种自激式同步整流升压变换器,所述自激式同步整流升压变换器包含:
第一开关,接受一脉冲驱动信号而反复地导通与关断;
第一绕阻,连接一输入电压源及所述第一开关之间,并于第一开关导通时储能,于第一开关关断时放能;
辅助绕组,连接所述第一绕阻及所述第一开关;
开关电路,连接所述辅助绕组,根据所述辅助绕组两端电压的改变而输出一控制信号;以及
第二开关,连接所述开关电路而接收其控制信号,并根据所述控制信号导通或关断。
在本实用新型的一实施例中,所述第一开关及第二开关皆是N沟道金属氧化物半导体晶体管。
在本实用新型的一实施例中,所述开关电路包括二极管和第三开关,所述二极管的阳极是连接所述辅助绕组的一端;所述第三开关是连接于所述二极管的阴极及所述第二开关之间;当所述辅助绕组两端电压为正向电压时,所述二极管呈导通状态,所述第三开关呈关断状态,所述第二开关呈导通状态;所述辅助绕组两端电压为反向电压时,所述二极管呈截止状态,所述第三开关呈导通状态,所述第二开关呈关断状态。
在本实用新型的一实施例中,所述第三开关是一晶体管,其中所述第三开关的射极是通过电阻连接所述二极管的阴极,并通过另一电阻连接所述第二开关的栅极;所述第三开关的基极是通过一电阻连接于所述二极管的阳极与所述辅助绕组之间;所述第三开关的集极是连接于所述辅助绕组的另端与所述第二开关的源极之间。
在本实用新型的一实施例中,当所述第一开关接受的脉冲驱动信号处于高电平时,所述第一开关为导通状态,所述第一绕组为储能状态,所述辅助绕组两端电压为正向电压,当所述第一开关接受的脉冲驱动信号处于低电平时,所述第一开关为关断状态,所述第一绕组两端电压为反向电压,所述辅助绕组两端电压为反向电压。
在本实用新型的一实施例中,所述第一绕组的同名端连接所述输入电压源,其非同名端则连接所述第一开关的漏极;所述辅助绕组的同名端连接所述第一开关的源极以及所述第三开关的集极,其非同名端连接所述第三开关的基极。
本实用新型主要是利用辅助绕组配合开关电路来控制整流开关的动作,实现自驱动的同步整流,进而取代传统的二极管整流方式,可以提高效率,并降低功耗。
图1是现有用来驱动液晶显示器的背光模块的升压电路的电路图。
图2是本实用新型自激式同步整流升压变换器一较佳实施例的电路图。
图3是本实用新型自激式同步整流升压变换器一较佳实施例的相关的电压及电流波形图。
为让本实用新型上述目的、特征及优点更明显易懂,下文特举本实用新型较佳实施例,并配合附图,作详细说明如下。再者,本实用新型所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本实用新型,而非用以限制本实用新型。
请参考图2所示,图2是本实用新型自激式同步整流升压变换器一较佳实施例的电路图。所述自激式同步整流升压变换器主要包含第一开关100、第一绕阻110、辅助绕组111、开关电路120及第二开关101。
所述第一开关100是用以接受一具有高电平及低电平的脉冲驱动信号Vg1,进而受脉冲驱动信号Vg1驱动而该反复地导通与关断;所述脉冲驱动信号Vg1可如图3所示,所述第一开关100于高电平时导通,于低电平时关断,故所述第一开关具有一开关周期为T,导通时间为Ton,占空比D=Ton/T。所述第一开关在本实施例中是一N沟道金属氧化物半导体晶体管。
所述第一绕阻110是连接一输入电压源V1及所述第一开关100之间,其中其同名端连接所述输入电压源V1,其非同名端连接所述第一开关100的漏极。所述第一绕阻110于第一开关100导通时存储能量,此时其同名端电压高于非同名端电压。再者,于第一开关100关断时,所述第一绕阻110两端感应一反向电压,此时其非同名端电压高于同名端电压。本实施例中,第一开关100在关断时漏极的端电压为V1/(1-D),而第一绕组110此时的两端的反向电压为V1
(1-D)- V1= V1D/(1-D)。
所述辅助绕组111连接所述第一绕阻110及所述第一开关100,其中所述辅助绕组111的同名端连接所述第一开关100的漏极及第一绕阻110的非同名端。本实施例中,所述辅助绕组111与所述第一绕阻110的匝数比为N:1。在第一绕阻110为储能阶段时,所述辅助绕组111的同名端电压高于非同名端电压;在第一绕组110感应一反向电压V1D/(1-D)时,所述辅助绕组111的非同名端电压高于同名端电压,且两端电压为N*
V1D/(1-D)。
所述开关电路120连接所述辅助绕组111,并根据所述辅助绕组111两端电压的改变而输出一控制信号。本实施例中,所述开关电路120包含一二极管104及一第三开关103。本实施例中,所述二极管104的阳极是连接所述辅助绕组111的非同名端。所述第三开关103是连接所述二极管104的阴极。本实施例中,当所述辅助绕组111两端电压为正向电压时,所述二极管104呈导通状态,所述第三开关103呈关断状态;所述辅助绕组111两端电压为反向电压时,所述二极管104呈截止状态,所述第三开关103呈导通状态。所述第三开关103优选为一晶体管,其射极通过电阻连接所述二极管104的阴极;其基极是通过一电阻连接于所述二极管104的阳极与所述辅助绕组111的非同名端之间;其集极是连接于所述辅助绕组111的同名端。
所述第二开关101连接所述开关电路120而接收其控制信号,并根据所述控制信号导通或关断,其中,当所述第三开关103呈关断状态时,所述第二开关101呈导通状态;当所述第三开关103呈导通状态,所述第二开关101呈关断状态。更详细地,所述第二开关101为一N沟道金属氧化物半导体晶体管,其栅极通过一电阻连接所述第三开关103的射极;其源极连接所述第三开关103的集极;其漏极则连接一输出电容105。
当所述脉冲驱动信号Vg1处于高电平时,所述第一开关100为导通状态,所述第一绕组110为储能状态,如图3所示,其电流IL以斜率V1/L线性增长(L为第一绕组110的电感值),此时所述辅助绕组111两端电压为正向电压,此时二极管104呈截止状态,而第三开关103呈导通状态,由于第二开关101的栅极连接第三开关103的源极,因此第二开关101呈关断状态。
当所述脉冲驱动信号Vg1处于低电平时,所述第一开关100为关断状态,所述第一绕组110两端电压为反向电压,此时所述辅助绕组111两端电压为反向电压,此时二极管104呈导通状态,而第三开关呈关断状态,第二开关101的栅极电压高于源极电压而导通,进而实现同步整流。从图3可得知,驱动第二开关101的信号Vg2波形与脉冲驱动信号的波形相位相反。
由上述说明可知,本实用新型利用辅助绕组111同步感应前端第一绕组110的电流变化,通过正向及反向电压的变换,配合二极管104及第三开关103来控制第二开关101的导通与关断,进而达到自激式同步整流。当应用在大尺寸背光驱动电路中,由于负载并联数多,输出电流大,本实用新型以身为金属氧化物半导体晶体管的第二开关取代传统二极管整流,可以提高效率,降低功耗,且利用自激式同步整流的方式不需要采用浮地隔离手段,成本较低。
本实用新型已由上述相关实施例加以描述,然而上述实施例仅为实施本实用新型的范例。必需指出的是,已公开的实施例并未限制本实用新型的范围。相反地,包含于权利要求书的精神及范围的修改及均等设置均包括于本实用新型的范围内。
Claims (8)
- 一种自激式同步整流升压变换器,其特征在于:所述自激式同步整流升压变换器包含:第一开关,接受一脉冲驱动信号而反复地导通与关断;第一绕阻,连接一输入电压源及所述第一开关之间,并于第一开关导通时储能,于第一开关关断时放能;辅助绕组,连接所述第一绕阻及所述第一开关;开关电路,连接所述辅助绕组,并包括二极管和第三开关,所述二极管的阳极是连接所述辅助绕组的一端;所述第三开关是连接所述二极管的阴极;其中当所述辅助绕组两端电压为正向电压时,所述二极管呈导通状态,所述第三开关呈关断状态;所述辅助绕组两端电压为反向电压时,所述二极管呈截止状态,所述第三开关呈导通状态;以及第二开关,连接所述开关电路的第三开关,其中当第三开关呈关断状态时,所述第二开关呈导通状态;当第三开关呈导通状态时,所述第二开关呈关断状态。
- 一种自激式同步整流升压变换器,其特征在于:所述自激式同步整流升压变换器包含:第一开关,接受一脉冲驱动信号而反复地导通与关断;第一绕阻,连接一输入电压源及所述第一开关之间,并于第一开关导通时储能,于第一开关关断时放能;辅助绕组,连接所述第一绕阻及所述第一开关;开关电路,连接所述辅助绕组,根据所述辅助绕组两端电压的改变而输出一控制信号;以及第二开关,连接所述开关电路而接收其控制信号,并根据所述控制信号导通或关断。
- 如权利要求2所述的自激式同步整流升压变换器,其特征在于:所述第一开关及第二开关皆是N沟道金属氧化物半导体晶体管。
- 如权利要求3所述的自激式同步整流升压变换器,其特征在于:所述开关电路包括二极管和第三开关,所述二极管的阳极是连接所述辅助绕组的一端;所述第三开关是连接于所述二极管的阴极及所述第二开关之间;当所述辅助绕组两端电压为正向电压时,所述二极管呈导通状态,所述第三开关呈关断状态,所述第二开关呈导通状态;所述辅助绕组两端电压为反向电压时,所述二极管呈截止状态,所述第三开关呈导通状态,所述第二开关呈关断状态。
- 如权利要求4所述的自激式同步整流升压变换器,其特征在于:所述第三开关是一晶体管,其中所述第三开关的射极是通过电阻连接所述二极管的阴极,并通过另一电阻连接所述第二开关的栅极;所述第三开关的基极是通过一电阻连接于所述二极管的阳极与所述辅助绕组之间;所述第三开关的集极是连接于所述辅助绕组的另端与所述第二开关的源极之间。
- 如权利要求4所述的自激式同步整流升压变换器,其特征在于:当所述第一开关接受的脉冲驱动信号处于高电平时,所述第一开关为导通状态,所述第一绕组为储能状态,所述辅助绕组两端电压为正向电压,当所述第一开关接受的脉冲驱动信号处于低电平时,所述第一开关为关断状态,所述第一绕组两端电压为反向电压,所述辅助绕组两端电压为反向电压。
- 如权利要求5所述的自激式同步整流升压变换器,其特征在于:当所述第一开关接受的脉冲驱动信号处于高电平时,所述第一开关为导通状态,所述第一绕组为储能状态,所述辅助绕组两端电压为正向电压,当所述第一开关接受的脉冲驱动信号处于低电平时,所述第一开关为关断状态,所述第一绕组两端电压为反向电压,所述辅助绕组两端电压为反向电压。
- 如权利要求5所述的自激式同步整流升压变换器,其特征在于:所述第一绕组的同名端连接所述输入电压源,其非同名端则连接所述第一开关的漏极;所述辅助绕组的同名端连接所述第一开关的源极以及所述第三开关的集极,其非同名端连接所述第三开关的基极。
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| CN201120196860.9 | 2011-06-11 |
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| CN110112914A (zh) * | 2018-07-27 | 2019-08-09 | 浙江工业大学 | 双通道jfet型自激式交错并联dc-dc变换器 |
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| CN103516181B (zh) * | 2013-09-04 | 2017-01-04 | 崇贸科技股份有限公司 | 控制电路以及同步整流控制电路 |
| CN105322767B (zh) * | 2015-12-10 | 2017-09-01 | 常州诚联电源股份有限公司 | 一种mos管的同步自驱动电路 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05268762A (ja) * | 1992-03-17 | 1993-10-15 | Nec Corp | 昇圧型アクティブフィルタ回路 |
| CN1925296A (zh) * | 2005-09-01 | 2007-03-07 | 富士电机电子设备技术株式会社 | 电功率转换器 |
| JP2009142020A (ja) * | 2007-12-05 | 2009-06-25 | Tdk-Lambda Corp | 電源装置 |
-
2011
- 2011-06-11 CN CN2011201968609U patent/CN202167992U/zh not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05268762A (ja) * | 1992-03-17 | 1993-10-15 | Nec Corp | 昇圧型アクティブフィルタ回路 |
| CN1925296A (zh) * | 2005-09-01 | 2007-03-07 | 富士电机电子设备技术株式会社 | 电功率转换器 |
| JP2009142020A (ja) * | 2007-12-05 | 2009-06-25 | Tdk-Lambda Corp | 電源装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112914A (zh) * | 2018-07-27 | 2019-08-09 | 浙江工业大学 | 双通道jfet型自激式交错并联dc-dc变换器 |
| CN110112914B (zh) * | 2018-07-27 | 2024-04-30 | 浙江工业大学 | 双通道jfet型自激式交错并联dc-dc变换器 |
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