WO2012151744A1 - Thin film encapsulation of organic light emitting diodes - Google Patents

Thin film encapsulation of organic light emitting diodes Download PDF

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Publication number
WO2012151744A1
WO2012151744A1 PCT/CN2011/073910 CN2011073910W WO2012151744A1 WO 2012151744 A1 WO2012151744 A1 WO 2012151744A1 CN 2011073910 W CN2011073910 W CN 2011073910W WO 2012151744 A1 WO2012151744 A1 WO 2012151744A1
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WO
WIPO (PCT)
Prior art keywords
layer
metal
light emitting
oled
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/073910
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French (fr)
Inventor
Edward Feng
Jianhua Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Linde GmbH
Original Assignee
University of Shanghai for Science and Technology
Linde GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology, Linde GmbH filed Critical University of Shanghai for Science and Technology
Priority to PH1/2013/502098A priority Critical patent/PH12013502098A1/en
Priority to US14/003,373 priority patent/US9153794B2/en
Priority to CN201180070727.1A priority patent/CN103688347B/en
Priority to PCT/CN2011/073910 priority patent/WO2012151744A1/en
Priority to KR1020137032795A priority patent/KR101835920B1/en
Priority to TW101116387A priority patent/TWI559589B/en
Publication of WO2012151744A1 publication Critical patent/WO2012151744A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the present invention relates to new methods for the encapsulation of organic light emitting diodes (OLED).
  • OLEDs are a type of light emitting diode in which the emissive electroluminescent layer is a film of an organic compound that emits light in response to an electric current. The organic material is sandwiched between two electrodes at least one being a transparent electrode. OLEDs exhibit high luminescence, high efficiency and require low driving voltage and are therefore good candidates for use in display screens, e.g. for televisions, computer monitors, mobile phone screens, etc. OLEDs can effectively be used for large panel areas and full color displays with extremely high resolution.
  • OLEDs for displays require special treatment. In particular, exposure to moisture or oxygen can do extensive damage to the organic luminescent layer. Therefore, encapsulation of the OLED is critical to protect the device from moisture and oxygen.
  • encapsulation of the OLED is critical to protect the device from moisture and oxygen.
  • a desiccant material such as calcium oxide or barium oxide is normally incorporated into the device when using an adhesively attached metal or glass encapsulation layer. This method of encapsulation is high in cost and fairly low in effectiveness. It also results in a final device having a relatively high profile.
  • Another method of encapsulating OLEDs is to use an inorganic, organic or hybrid layer; e.g. SiN x , SiO x or A1 2 0 3 deposited onto the device.
  • This layer may be deposited by any one of many standard deposition techniques, including chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD). All of these deposition techniques require temperatures that exceed the normal limits of the OLED device and therefore may damage the device, especially the organic luminescent layer during processing. Further the equipment required for such depositions is costly and deposition times are relatively long thereby adding significant cost to the manufacturing of the devices.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • the present invention provides a low temperature, low cost method of
  • Figure 1 is a schematic drawing showing an OLED device.
  • FIG. 1 is a schematic drawing showing a process for encapsulating an OLED according to one embodiment of the present invention.
  • FIG. 3 is a schematic drawing showing a process for encapsulating an OLED according to a second embodiment of the present invention.
  • the present invention provides a low temperature, low cost method of
  • one embodiment of the present invention provides a method of forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture and oxygen.
  • a second embodiment of the present invention provides a method of forming a buffer layer and a metal layer onto the OLED structure that is then treated using a plasma, UV-ozone, or wet chemical treatment, to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen.
  • a plasma, UV-ozone, or wet chemical treatment to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen.
  • FIG. 1 is a schematic drawing showing an OLED device.
  • the OLED device comprises a substrate 1, having an anode layer 2, formed thereon.
  • An organic electroluminescent layer 3, is formed on top of the anode layer 2, and a cathode layer 4, covers the organic layer 3, to complete the OLED device.
  • the anode layer 2 is typically formed from indium tin oxide and the cathode layer 4 is usually made of aluminum.
  • the organic layer 3, is composed of three separate layers; a hole transport layer (HTL) 3a, a light emitting layer (EML) 3b, and an electron transport layer (ETL) 3c.
  • HTL hole transport layer
  • EML light emitting layer
  • ETL electron transport layer
  • FIG. 1 is a schematic drawing showing a process for encapsulating an OLED according to one embodiment of the present invention.
  • a fabricated OLED device 10 having the layers shown in Figure 1; i.e. substrate 1, anode layer 2, organic electroluminescent layer 3 (with HTL 3a, EML 3b, and ETL 3c), and cathode layer 4, is subjected to treatment from treatment means 20 to produce a passivation layer 5, on the surface of the cathode layer 4.
  • the cathode layer 4 is an aluminum layer
  • the passivation layer 5 will be a metal alumina oxide film.
  • the passivation layer 5, encapsulates the OLED 10, and protects it from moisture and oxygen.
  • the treatment means 20, can be any means that provides for oxidation of the cathode layer 4, at temperatures that do not harm the OLED 10.
  • the treatment means 20, may be a plasma, UV-ozone, or wet chemical treatment means.
  • the treatment means 20, is a UV source and the OLED 10, is treated in a UV chamber and the metal cathode 4, is exposed to UV light for 10 to 30 minutes.
  • Figure 3 is a schematic drawing showing a process for encapsulating an OLED according to another embodiment of the present invention. In particular, a fabricated OLED device 100, having the layers shown in Figure 1; i.e.
  • substrate 1 anode layer 2, organic electroluminescent layer 3 (with HTL 3a, EML 3b, and ETL 3c), and cathode layer 4, has a buffer layer 50, and a metal layer 60 formed thereon.
  • This assembly is then subjected to treatment from treatment means 200 to produce a passivation layer 70.
  • the buffer layer 50 may be a ZnS layer and the metal layer 60, may be an aluminum layer. Both layers can be generated by evaporation. If the metal layer 60 is an aluminum layer, then the passivation layer 70, will be a metal alumina oxide film.
  • the passivation layer 70 encapsulates the OLED 100, and protects it from moisture and oxygen.
  • the treatment means 200 can be any means that provides for oxidation of the metal layer 60, at temperatures that do not harm the OLED 100.
  • the treatment means 200 may be a plasma, UV-ozone, or wet chemical treatment means.
  • the present invention can comprise the following stages:
  • Buffer layer 50 fabrication by evaporation to produce layer thickness of about lOOnm
  • Metal layer 60 fabrication by evaporation to produce layer thickness of about 30 nm;
  • the present invention provides several advantages over the prior art encapsulation methods.
  • the process of creating a metal passivation layer, or of forming a buffer layer and a metal layer followed by creation of a metal passivation layer according to the present invention is a simple process and can easily be used in mass production.
  • the process temperature is low, thus avoiding damage to the OLED device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A low temperature, low cost method of encapsulating organic light emitting diodes (OLED) that avoids damage to the OLED device. One method comprises forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture and oxygen. Another method comprises forming a buffer layer and a metal layer onto the OLED and then treating the metal layer using a plasma, UV-ozone, or wet chemical treatment, to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen.

Description

Thin Film Encapsulation Of Organic Light Emitting Diodes
FIELD OF THE INVENTION
(001) The present invention relates to new methods for the encapsulation of organic light emitting diodes (OLED).
BACKGROUND OF THE INVENTION
(002) OLEDs are a type of light emitting diode in which the emissive electroluminescent layer is a film of an organic compound that emits light in response to an electric current. The organic material is sandwiched between two electrodes at least one being a transparent electrode. OLEDs exhibit high luminescence, high efficiency and require low driving voltage and are therefore good candidates for use in display screens, e.g. for televisions, computer monitors, mobile phone screens, etc. OLEDs can effectively be used for large panel areas and full color displays with extremely high resolution.
(003) However, the use of OLEDs for displays requires special treatment. In particular, exposure to moisture or oxygen can do extensive damage to the organic luminescent layer. Therefore, encapsulation of the OLED is critical to protect the device from moisture and oxygen. There are several methods used for encapsulation, but all of them have disadvantages. In particular, one method of encapsulating OLEDs is to cover the device with a metal or glass layer secured by an epoxy resin. A desiccant material, such as calcium oxide or barium oxide is normally incorporated into the device when using an adhesively attached metal or glass encapsulation layer. This method of encapsulation is high in cost and fairly low in effectiveness. It also results in a final device having a relatively high profile.
(004) Another method of encapsulating OLEDs is to use an inorganic, organic or hybrid layer; e.g. SiNx, SiOx or A1203 deposited onto the device. This layer may be deposited by any one of many standard deposition techniques, including chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD). All of these deposition techniques require temperatures that exceed the normal limits of the OLED device and therefore may damage the device, especially the organic luminescent layer during processing. Further the equipment required for such depositions is costly and deposition times are relatively long thereby adding significant cost to the manufacturing of the devices.
(005) Therefore, there is a need in the art for improvements to encapsulation techniques for OLEDs.
SUMMARY OF THE INVENTION
(006) The present invention provides a low temperature, low cost method of
encapsulating OLEDs that avoids damage to the OLED device
BRIEF DESCRIPTION OF THE DRAWINGS
(007) Figure 1 is a schematic drawing showing an OLED device.
(008) Figure 2 is a schematic drawing showing a process for encapsulating an OLED according to one embodiment of the present invention.
(009) Figure 3 is a schematic drawing showing a process for encapsulating an OLED according to a second embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
(010) The present invention provides a low temperature, low cost method of
encapsulating OLEDs that avoids damage to the OLED device. In particular, one embodiment of the present invention provides a method of forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture and oxygen.
(011) A second embodiment of the present invention provides a method of forming a buffer layer and a metal layer onto the OLED structure that is then treated using a plasma, UV-ozone, or wet chemical treatment, to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen. The present invention will be described in greater detail with reference to the drawing figures.
(012) Figure 1 is a schematic drawing showing an OLED device. In particular, the OLED device comprises a substrate 1, having an anode layer 2, formed thereon. An organic electroluminescent layer 3, is formed on top of the anode layer 2, and a cathode layer 4, covers the organic layer 3, to complete the OLED device. The anode layer 2 is typically formed from indium tin oxide and the cathode layer 4 is usually made of aluminum. The organic layer 3, is composed of three separate layers; a hole transport layer (HTL) 3a, a light emitting layer (EML) 3b, and an electron transport layer (ETL) 3c.
(013) Figure 2 is a schematic drawing showing a process for encapsulating an OLED according to one embodiment of the present invention. In particular, a fabricated OLED device 10, having the layers shown in Figure 1; i.e. substrate 1, anode layer 2, organic electroluminescent layer 3 (with HTL 3a, EML 3b, and ETL 3c), and cathode layer 4, is subjected to treatment from treatment means 20 to produce a passivation layer 5, on the surface of the cathode layer 4. For example, if the cathode layer 4 is an aluminum layer, then the passivation layer 5, will be a metal alumina oxide film. The passivation layer 5, encapsulates the OLED 10, and protects it from moisture and oxygen.
(014) In accordance with the present invention, the treatment means 20, can be any means that provides for oxidation of the cathode layer 4, at temperatures that do not harm the OLED 10. For example, the treatment means 20, may be a plasma, UV-ozone, or wet chemical treatment means. In accordance with a particular embodiment of the present invention, the treatment means 20, is a UV source and the OLED 10, is treated in a UV chamber and the metal cathode 4, is exposed to UV light for 10 to 30 minutes. (015) Figure 3 is a schematic drawing showing a process for encapsulating an OLED according to another embodiment of the present invention. In particular, a fabricated OLED device 100, having the layers shown in Figure 1; i.e. substrate 1, anode layer 2, organic electroluminescent layer 3 (with HTL 3a, EML 3b, and ETL 3c), and cathode layer 4, has a buffer layer 50, and a metal layer 60 formed thereon. This assembly is then subjected to treatment from treatment means 200 to produce a passivation layer 70. The buffer layer 50, may be a ZnS layer and the metal layer 60, may be an aluminum layer. Both layers can be generated by evaporation. If the metal layer 60 is an aluminum layer, then the passivation layer 70, will be a metal alumina oxide film. The passivation layer 70, encapsulates the OLED 100, and protects it from moisture and oxygen.
(016) In accordance with the present invention, the treatment means 200, can be any means that provides for oxidation of the metal layer 60, at temperatures that do not harm the OLED 100. For example, the treatment means 200, may be a plasma, UV-ozone, or wet chemical treatment means. In particular, the present invention can comprise the following stages:
Buffer layer 50, fabrication by evaporation to produce layer thickness of about lOOnm;
Metal layer 60, fabrication by evaporation to produce layer thickness of about 30 nm;
Placing OLED device 100, in a UV chamber; and
Exposing the metal layer 60, to UV light for 10 to 30 minutes.
(017) The present invention provides several advantages over the prior art encapsulation methods. For example, the process of creating a metal passivation layer, or of forming a buffer layer and a metal layer followed by creation of a metal passivation layer according to the present invention is a simple process and can easily be used in mass production. In addition, the process temperature is low, thus avoiding damage to the OLED device.
Moreover, no new equipment is necessary to carry out the process, thereby significantly reducing capital costs. Also, less processing and transport time is needed so that a higher output and consequent lower operating costs can be achieved. (018) It will be understood that the embodiments described herein are merely exemplary and that one skilled in the art may make variations and modifications without departing from the spirit and scope of the present invention. All such variations and modifications are intended to be included within the scope of the invention as described above. Further, all embodiments disclosed are not necessarily in the alternative, as various embodiments of the invention may be combined to provide the desired result.

Claims

What is claimed is:
1. A method for encapsulating an organic light emitting diode comprising:
providing a fabricated organic light emitting diode having a substrate, an anode layer formed on the substrate, an organic electroluminescent layer formed on the anode layer, and a cathode layer formed on the organic electroluminescent layer; and
treating the cathode layer to produce a passivation layer on the surface of the cathode layer.
2. The method of claim 1 wherein the anode layer is an indium tin oxide layer.
3. The method of claim 1 wherein the cathode layer is an aluminum layer.
4. The method of claim 1 wherein the organic electroluminescent layer is composed of a hole transport layer, a light emitting layer and an electron transport layer.
5. The method of claim 1 wherein treating comprises treating with plasma, UV-ozone, or wet chemicals.
6. The method of claim 1 wherein treating comprises exposing the cathode layer to UV light for 10 to 30 minutes.
7. A method for encapsulating an organic light emitting diode comprising:
providing a fabricated organic light emitting diode having a substrate, an anode layer formed on the substrate, an organic electroluminescent layer formed on the anode layer, and a cathode layer formed on the organic electroluminescent layer;
forming a buffer layer on the cathode layer;
forming a metal layer on the buffer layer; and
treating the metal layer to produce a passivation layer on the surface of the metal layer.
8. The method of claim 7 wherein the anode layer is an indium tin oxide layer.
9. The method of claim 7 wherein the cathode layer is an aluminum layer.
10. The method of claim 7 wherein the organic electroluminescent layer is composed of a hole transport layer, a light emitting layer and an electron transport layer.
11. The method of claim 7 wherein the buffer layer is a ZnS layer.
12. The method of claim 7 wherein the metal layer is an aluminum layer.
13. The method of claim 7 wherein the buffer layer and the metal layer are generated by evaporation.
14. The method of claim 7 wherein treating comprises treating with plasma, UV-ozone, or wet chemicals.
15. The method of claim 7 wherein treating comprises exposing the metal layer to UV light for 10 to 30 minutes.
16. The method of claim 7 wherein forming the buffer layer comprises evaporating the buffer layer to a thickness of lOOnm; forming the metal layer comprises evaporating the metal layer to a thickness of 30 nm; and treating comprises exposing the metal layer to UV light for 10 to 30 minutes.
PCT/CN2011/073910 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes Ceased WO2012151744A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PH1/2013/502098A PH12013502098A1 (en) 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes
US14/003,373 US9153794B2 (en) 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes
CN201180070727.1A CN103688347B (en) 2011-05-11 2011-05-11 Thin Film Encapsulation of Organic Light Emitting Diodes
PCT/CN2011/073910 WO2012151744A1 (en) 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes
KR1020137032795A KR101835920B1 (en) 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes
TW101116387A TWI559589B (en) 2011-05-11 2012-05-08 Thin film package of organic light emitting diode

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Application Number Priority Date Filing Date Title
PCT/CN2011/073910 WO2012151744A1 (en) 2011-05-11 2011-05-11 Thin film encapsulation of organic light emitting diodes

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WO2012151744A1 true WO2012151744A1 (en) 2012-11-15

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US (1) US9153794B2 (en)
KR (1) KR101835920B1 (en)
CN (1) CN103688347B (en)
PH (1) PH12013502098A1 (en)
TW (1) TWI559589B (en)
WO (1) WO2012151744A1 (en)

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CN113451474B (en) * 2020-08-11 2022-04-19 重庆康佳光电技术研究院有限公司 LED chip and preparation method thereof

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Publication number Publication date
US9153794B2 (en) 2015-10-06
TWI559589B (en) 2016-11-21
US20150125975A1 (en) 2015-05-07
TW201251169A (en) 2012-12-16
KR101835920B1 (en) 2018-03-07
CN103688347A (en) 2014-03-26
PH12013502098A1 (en) 2019-10-11
KR20140033401A (en) 2014-03-18
CN103688347B (en) 2017-03-29

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